TW201128809A - Light emitting diode package strucyures, display devices and fabrication methods for light emitting diode package structures - Google Patents

Light emitting diode package strucyures, display devices and fabrication methods for light emitting diode package structures Download PDF

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TW201128809A
TW201128809A TW99103145A TW99103145A TW201128809A TW 201128809 A TW201128809 A TW 201128809A TW 99103145 A TW99103145 A TW 99103145A TW 99103145 A TW99103145 A TW 99103145A TW 201128809 A TW201128809 A TW 201128809A
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Taiwan
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substrate
emitting diode
light emitting
diode package
conductive layer
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TW99103145A
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Chinese (zh)
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TWI415304B (en
Inventor
Lu-Ming Lai
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Everlight Electronics Co Ltd
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Publication of TWI415304B publication Critical patent/TWI415304B/en

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Abstract

Light emitting diode package structures, display devices and fabrication methods for light emitting diode package structures are presented. The method includes providing a substrate structure, the substrate structure being made of at least one base material. A first conductive layer is formed on a first face of the substrate structure. Pluralities of drilled holes are formed in the substrate structure. The drilled holes perforate through the substrate structure. An adhesion layer is formed on a second face which is opposite to the first face of the substrate to cover one end of each of the drilled holes. A second conductive layer is formed on the adhesion layer. Part of the adhesion layer is removed from the ends of the drilled holes on the first end of the substrate structure. A metal layer is deposited on the first face of the substrate and formed on inner sidewalls and bottom of the drilled holes. The first and second conductive layers are respectively patterned to form a circuit pattern on the first surface and second face of the substrate structure. An LED die is mounted on the second face of the substrate structure and electrically connected to the circuit pattern. An encapsulation is molded and covers the second face of the substrate structure. The substrate structure is cut along out rims of a package region formed by the drilled holes to form the light emitting diode package structure.

Description

.201128809 « 六、發明說明: 【發明所屬之技術領域】 本發明係有關於一種側設型LED封裝體,特別有關於 以機械鑽孔及銅箔黏貼製程形成之全包覆膠式側設型LED 封裝體及其製造方法。 【先前技術】 側設型LED封裝體具有邊射型發光二極體,特別是其.201128809 « Sixth, the invention description: [Technical field of the invention] The present invention relates to a side-mounted LED package, in particular, a fully-coated type of side-mounted type formed by mechanical drilling and copper foil bonding process LED package and method of manufacturing the same. [Prior Art] The side-mounted LED package has a side-emitting type light-emitting diode, in particular

封裝方式,利用轉移模鑄的方式製作全包覆式透鏡,以構 成表面黏著型侧光型(Side View)封裝。 第1圖係顯示傳統側設型LED封裝體的立體示意圖。 於第i圖中,一小尺寸的侧設型LED封襄體ι〇包括一基 板12,其上具有LED晶粒設置於導電線路上(未繪示)。一 封膠14以模鑄的方式包覆LED晶粒及固日日日線,;為封裝 體的透鏡。由於此侧設型LED封裝體1〇的設 以侧立固著的型式封裝於系統(例如光學式觸控榮幕)上疋 因此為了增域㈣接紐,在LED封裝體iQ兩端需增 加電極層16a、16b以增加側面吃錫面積,甚至需要增加一 額外的電極墊16c。 曰σ 小尺寸侧設型LED封裝體’膠體大小已經受到限制, 如果因為特殊透鏡(lens)需求,必須要使膠體利用最大化, 勢必整個成品的PCB都要包覆膠體。因此,f助吃锡 孔上方也必須要包覆膠體,但是如此―來,在封膠的過程 中’孔内將會灌滿膠體。 傳統的製造方法必須使用雷射鑽孔,並且停止至最上 EL98046/9042-A42225TW/fmal/ 5 201128809 層的銅箔層’利用銅箔層來阻擋膠體灌入孔内。但是’如 欲形成可以幫助抓錫的孔洞,其孔徑對雷射鑽孔方法而言 太大’必須重複施以多次雷射(例如數十次)於同一點上以 達大孔經鑽孔’造成成本過高,不符生產效益。另外的做 法為’在PCB基板的背面形成半盲孔(blind hole),此種鐵 孔限制為必須使用大厚度的PCB板,會影響成品的高度限 制及成本,並且在PCB加工時,一次只能加工一片PCB, 同樣地造成成本居高不下。再者,另一做法為使用聚亞醯 胺帶(PI tape)黏貼開口的做法,因為PI帶本身的黏貼公 差,以及於封膠時支撐膠體的能力遠不及銅箔,因此限制 產品的適用尺寸。再者,另有使用防焊漆(綠漆)半塞孔的 做法’因為顧及防焊漆的molding的财受度,因此必須要 填孔超過一半以上的深度,如此一來會影響到側設塑吃錫 及PCB的厚度必須要加厚。 於先前技術中’關於印刷電路板機械鑽孔的相關技 術,日本專利早期公開jp11_29812〇揭露一種印刷電路板 的製造方法,包括以以蝕刻法移除基板上下表面的銅箔 層’並以機械鑽孔的方式形成穿孔(thr0Ugh h〇le)於基板 中’之後在絕緣基板的表面上形成光阻及線路。 【發明内容】 本發明之一實施例提供一種發光二極體封裝結構的製 造方法,包括:提供一基板結構,該基板結構由至少一基 材所構成;形成一第一導電層於該基板結構的一第一面 EL98046/9042-A42225TW/fmal/ 6 201128809 上;在該基板結構上形成多個鑽孔,該些鑽孔係穿透該基 板結構;形成一黏結層於相對該基板結構之該第一面的一 第二面上,以將該些鑽孔之一端覆蓋住;形成一第二導電 層於該黏結層上;自該基板結構的該第一面,由該些鑽孔 的一端内移除部份的該黏結層;沉積一金屬層於該基板結 構的第一面上,並形成在該些鑽孔的内側壁及底部上;分 別圖案化該第一和第二導電層以形成一電路圖案於該基板 結構之第一面及該第二面上;封裝一發光二極體晶粒於該 基板結構的第二面上,並與該電路圖案電性連接;模鑄一 封膠並覆蓋住該基板結構的第二面;以及沿該些鑽孔所構 成的一封裝區域的外緣,切割該基板結構以形成該發光二 極體封裝結構。 本發明之實施例另提供一種發光二極體封裝結構的製 造方法,包括:提供一基板結構,該基板結構由至少一基 材所構成,該基材具有一第一金屬層形成於一該基材之第 一面上;形成多個鑽孔於該基板結構内,該些鑽孔構成一 封裝區域;形成一黏結層於相對該基板結構之該第一面的 一第二面上,以將該些鑽孔之一端覆蓋住;形成一第二金 屬層於該黏結層上;自該基板結構的該第一面,由該些鑽 孔的一端内移除部份的該黏結層;沉積一金屬層於該基板 結構的第一面上,並形成在該些鑽孔的内側壁及底部上; 分別圖案化該第一和第二導電層以形成一電路圖案於該基 板結構之第一面及該第二面上;封裝一發光二極體晶粒於 該基板結構的第二面上,並與該電路圖案電性連接;模鑄 一封膠並覆蓋住該基板結構的第二面;以及沿該些鑽孔所 EL98046/9042-A42225TW/fmal/ 7 201128809 構成的一封裝區域的外緣,切割該基板結構以形成該發光 二極體封裝結構。 x 本發明之實施例又提供一種發光二極體封裴結構,包 括.一基底,該基底具有多個四分之一的圓形 λ 該基底之角落上;一圖案化之第一導電層,設 之-表面上;—圖案化之第二導電層’設置於相對該基底 表面之另一表面上;一黏結層,設置於該圖案化之第二導 電層與該基底之該表面之間;一金屬層,形成於該些基底 之圓形通孔的内側壁;一發光二極體晶片,設置於該圖案 化之第二導電層上,並藉由該金屬層電性連接該圖案化之 第一導電層;以及一光學透鏡,係完全包覆該晶片及該基 底之該表面。 本發明之實施例再提供一種顯示裝置,包括:一顯示 面板;以及兩個以上發光二極體封裝結構做為發射器及一 CMOS接受器做為偵測觸控訊號的元件,設置於該顯示面 板的角落。其中該發光二極體封裝結構包括:一基底該 基底具有多個四分之一的圓形通孔設置在該基底之角落 上;一圖案化之第一導電層,設置於該基底之—表面上; 一圖案化之第二導電層,設置於相對該基底表面之另一表 面上;一黏結層,設置於該圖案化之第二導電層與該基底 之該表面之間;一金屬層,形成於該些基底之圓形通孔的 内側壁;一發光二極體晶片’設置於該圖案化之第二導電 層上’並藉由該金屬層電性連接該圖案化之第一導電層; 以及一光學透鏡,係完全包覆該晶片及該基底之該表面。 EL98046/9042-A42225TW/fmay 8 201128809 為使本發明能更明顯易懂,下文特舉實施例,並配合 所附圖式’作詳細說明如下: 【實施方式】 以下以各實施例詳細說明並伴隨著圖式說明之範例, 做為本發明之參考依據。在圖式或說明書描述中,相似或 相同之。p分皆使用相同之圖號。且在圖式中,實施例之形 狀或疋厚度可擴大,並以簡化或是方便標示。再者,圖式 中各π件之部分將以分別描述說明之,值得注意的是,圖 中未繪不或描述之元件,為所屬技術領域中具有通常知識 者所知的形式,另外,特定之實施例僅為揭示本發明使用 之特定方式’其並非用以限定本發明。 般側設型栅格陣列(Land Grid Array,簡稱LGA)封裝 要達到吃錫優良,大多利用PCB鑽孔達到侧面增加吃錫面In the package method, a fully coated lens is formed by transfer molding to form a surface mount type side view (Side View) package. Fig. 1 is a perspective view showing a conventional side-mounted LED package. In Fig. i, a small-sized side-mounted LED package body ι includes a substrate 12 having LED dies disposed on conductive lines (not shown). A sealant 14 is formed by die-molding the LED die and the wire, and is a lens of the package. Since the side-mounted LED package 1〇 is packaged in a side-mounted type on a system (for example, an optical touch screen), in order to increase the domain (four) connection, it is necessary to increase both ends of the LED package iQ. The electrode layers 16a, 16b increase the tin area on the side, and it is even necessary to add an additional electrode pad 16c.曰σ Small size side-mounted LED package 'The size of the gel has been limited. If the lens needs to be maximized due to the special lens requirements, the entire finished PCB must be coated with a gel. Therefore, it is necessary to coat the gel above the tin-assisted tin hole, but in this way, the hole will be filled with colloid during the sealing process. Conventional manufacturing methods must use laser drilling and stop to the uppermost EL98046/9042-A42225TW/fmal/ 5 201128809 layer of copper foil layer' with a copper foil layer to block the gel from filling the hole. But 'If you want to form a hole that can help catch tin, its aperture is too big for the laser drilling method'. You must repeatedly apply multiple lasers (for example, dozens of times) at the same point to drill a large hole. 'The cost is too high and does not meet the production efficiency. Another approach is to form a blind hole on the back side of the PCB substrate. This kind of iron hole is limited to the need to use a large thickness of the PCB board, which will affect the height limit and cost of the finished product, and only one time during PCB processing. The ability to process a piece of PCB, the same cost is still high. In addition, another method is to use the PI tape to adhere the opening, because the adhesion tolerance of the PI tape itself and the ability to support the colloid during sealing are far less than the copper foil, thus limiting the applicable size of the product. . In addition, the use of solder mask (green lacquer) semi-plugging method 'because of the reliability of the solder paste's molding, it is necessary to fill more than half of the depth, which will affect the side The thickness of plastic tin and PCB must be thickened. In the prior art, the related art regarding the mechanical drilling of printed circuit boards, Japanese Patent Laid-Open Publication No. JP-A No. 11-29812 discloses a method of manufacturing a printed circuit board including removing a copper foil layer on the upper and lower surfaces of the substrate by etching and mechanically drilling The way of the holes forms a perforation (in the substrate) and then forms a photoresist and a line on the surface of the insulating substrate. SUMMARY OF THE INVENTION An embodiment of the present invention provides a method of fabricating a light emitting diode package structure, including: providing a substrate structure, the substrate structure being composed of at least one substrate; forming a first conductive layer on the substrate structure a first surface of the EL98046/9042-A42225TW/fmal/6 201128809; forming a plurality of drill holes in the substrate structure, the drill holes penetrating the substrate structure; forming a bonding layer opposite to the substrate structure a second surface of the first surface, covering one end of the holes; forming a second conductive layer on the bonding layer; from the first side of the substrate structure, one end of the holes Removing a portion of the bonding layer; depositing a metal layer on the first side of the substrate structure and forming on the inner sidewalls and the bottom of the holes; respectively patterning the first and second conductive layers Forming a circuit pattern on the first surface and the second surface of the substrate structure; packaging a light emitting diode die on the second surface of the substrate structure, and electrically connecting the circuit pattern; molding a Glue and cover the structure of the substrate Two faces; and along the outer edge of the bore constituting the plurality of regions of a package, cutting the substrate structure to form the light-emitting diode package structure. An embodiment of the present invention further provides a method for fabricating a light emitting diode package structure, comprising: providing a substrate structure, the substrate structure being composed of at least one substrate, the substrate having a first metal layer formed on the substrate Forming a plurality of holes in the substrate structure, the holes forming a package area; forming a bonding layer on a second side opposite the first side of the substrate structure to One of the holes is covered; a second metal layer is formed on the bonding layer; and from the first side of the substrate structure, a portion of the bonding layer is removed from one end of the holes; a metal layer on the first surface of the substrate structure and formed on the inner sidewalls and the bottom of the holes; respectively patterning the first and second conductive layers to form a circuit pattern on the first side of the substrate structure And the second surface; encapsulating a light emitting diode die on the second surface of the substrate structure and electrically connecting with the circuit pattern; molding a glue and covering the second surface of the substrate structure; And along these holes, EL98046/9042-A4222 5TW/fmal/ 7 201128809 The outer edge of a package area is formed, and the substrate structure is cut to form the light emitting diode package structure. The embodiment of the present invention further provides a light emitting diode sealing structure, comprising: a substrate having a plurality of quarters of a circle λ on a corner of the substrate; a patterned first conductive layer, The patterned second conductive layer is disposed on the other surface of the substrate; a bonding layer is disposed between the patterned second conductive layer and the surface of the substrate; a metal layer is formed on the inner sidewall of the circular via hole of the substrate; a light emitting diode chip is disposed on the patterned second conductive layer, and the patterned layer is electrically connected by the metal layer a first conductive layer; and an optical lens that completely covers the wafer and the surface of the substrate. The embodiment of the present invention further provides a display device, including: a display panel; and two or more LED package structures as a transmitter and a CMOS receiver as components for detecting touch signals, and are disposed on the display The corner of the panel. The light emitting diode package structure includes: a substrate; the substrate has a plurality of quarters of circular through holes disposed at corners of the substrate; and a patterned first conductive layer disposed on the surface of the substrate a patterned second conductive layer disposed on the other surface opposite to the surface of the substrate; a bonding layer disposed between the patterned second conductive layer and the surface of the substrate; a metal layer, Forming on the inner sidewall of the circular through hole of the substrate; a light emitting diode chip 'on the patterned second conductive layer' and electrically connecting the patterned first conductive layer by the metal layer And an optical lens that completely covers the wafer and the surface of the substrate. EL98046/9042-A42225TW/fmay 8 201128809 In order to make the present invention more comprehensible, the following detailed description of the embodiments will be described in detail with reference to the accompanying drawings. The examples of the drawings are intended to be the basis for the present invention. In the drawings or the description of the specification, similar or identical. The p points all use the same figure number. Also, in the drawings, the shape or thickness of the embodiment may be enlarged and simplified or conveniently indicated. Furthermore, the parts of the π-parts in the drawings will be described separately, and it is noted that elements not shown or described in the drawings are in a form known to those of ordinary skill in the art, and The embodiments are merely illustrative of the specific ways in which the invention may be used, and are not intended to limit the invention. Land Grid Array (LGA) package to achieve good tin, most use PCB drilling to achieve side to increase the tin surface

,需求,使得錫膏與PCB銅箔接觸表面積增加,使握裹力 能達到推力測試需求,有特殊要求的情況,例如使用在 發光二極體(led)或接收光線的域應器(phQtQ _〇Γ)的 小尺寸封裝體,因為發光或收光角度的限制透鏡(㈣形 4求’加上尺寸的限制,使得膠體本身無可避 ,=須要包覆到鑽孔的上方。本發明主要實施例及樣態 用咖技術來製作全包覆式側設型封裝 體’可以達到吃錫優良以及降低成本 封顯示根據本發明之實施例的側設型led ^裝體的方法各步驟的示意圖。請表閱第2A圖,首 先提供-基板結構⑽,該基板結構由至少—基材所構成, EL98046/9042-A42225TW/fmay 9 201128809 例如用於製作印刷電路板(PCB)的素材基板 101。一般市售 的PCB板為雙層才反’於兩側皆有銅落,因此可以使用触刻 方式先將上層銅箔去除,然非限定於此,亦可以使用素材 基板101 ’並形成一第一導電層11〇 (例如銅箔)於該基板結 構的一第一面上。再者,亦可直接使用已形成電鍍銅箔的 素材基板。 接著’請參閱第2B圖’形成多個鑽孔105於基板結構 100内’該些鑽孔105係穿透該基板結構。為了達到較佳 的製程效率,可選擇將多片基板結構堆疊後,再進行機械 式同步鑽孔,以降低製造成本。於一範例中,該些鑽孔1〇5 的半徑大抵為〇.5mm。接著,形成一黏結層115於相對該 基板結構110之該第一面的一第二面上,以將該些鑽孔1〇5 之一端覆蓋住。於一實施例中,黏貼具有黏結層115的膠 帶於基板結構的第二面上’再將黏結層上的離型膜移除。 於另一實施例中,可直接塗佈黏結層115乾膜或者使用無 基材黏著方式於基板結構100的第二面上。接著,形成第 二導電層120 (例如銅箔)於黏結層115上’如第2D圖所示。 接著’進行形成鑽孔105内壁金屬化步驟。第3A-3C 圖係顯示根據本發明之實施例於機械鑽孔内形成金屬化導 電層各步驟的剖面示意圖。請參閱第3A圖,其顯示在鑽 孔105附近區域的剖面示意圖’為了使鑽孔105的内部顯 露第二導電層120,以利後續金屬化層直接接觸。於本發 明之一實施例中,自該基板結構的該第一面,由該些鑽孔 的一端内移除部份的該黏結層,以化學溶劑將鑽孔丨〇5底 部的黏結層115移除,如第3B圖所示。 EL98046/9042-A42225TW/fmal/ 10 201128809 接著’請參閱第3C圖,實施一金屬化製程(例如電鍍、 濺鍍或化學氣相沉積法),將一金屬層135形成在該些鑽孔 105的内側壁及底部上,其中第二面的第二導電層12〇可 藉由該金屬層135導到第一面的第一導電層11〇 (即後續圖 案化形成的陰極與陽極電極112、114)。 凊參閱第2E圖,接著進行固晶面上形成圖案化線路。 分別圖案化該第一和第二導電層以形成一電路圖案於該基 板結構之第一面及該第二面上。於一實施例中,施以微影 及侧步驟’將第二導電層12〇圖案化成電極電路結構, 包括固晶墊124部分和金屬線焊墊122部分。於其他實施 例中,依實際需求可增加電鍍層,以利led晶粒設置於導 電線路上。 接者,請參閱第2F圖,封裝一發光二極體晶粒於該基 板結構的第二面上,並與該電路圖案電性連接。例如,將 一 LED晶粒145固晶於固晶墊上,並將金屬線14〇連接 LED晶粒145與焊墊122。此後,模鑄一封膠並覆蓋住該 Α板結構的第二面,例如將-封膠132以移轉模鎢(transfer molding process)的方式包覆LED晶粒及固晶線,做為封裝 體的透鏡130。 在完成封朦步驟後’沿該些鑽孔所構成的一封裝區域 的外緣,切割該基板結構以形成該發光二極體封褒結構, 即完成全包覆式侧設型LED封裝體。達到低成本高功能的 小尺寸需求,吃錫區完整並最大化,PCB厚度不受限,因 應光學需求的大尺寸透鏡可以最大化包覆PCB而不用擔心 吃錫孔有溢膠的問題。再者,此封裝體亦可使用於The demand increases the contact surface area between the solder paste and the PCB copper foil, so that the gripping force can meet the thrust test requirements, and there are special requirements, such as the use of a light-emitting diode (LED) or a field receiving device (phQtQ _小) small-sized package, because of the limitation of the illuminating or light-receiving angle lens ((4) shape 4" plus the size limitation, so that the colloid itself is inevitable, = need to be coated above the drill hole. The main Embodiments and aspects of the coffee-making method for making a fully-coated side-mounted package' can achieve the advantages of good tin-making and cost reduction. The schematic diagram of the steps of the method for displaying the side-mounted type LED package according to the embodiment of the present invention is shown. Referring to FIG. 2A, first, a substrate structure (10) is provided, which is composed of at least a substrate, and EL98046/9042-A42225TW/fmay 9 201128809 is used, for example, to fabricate a material substrate 101 of a printed circuit board (PCB). Generally, the commercially available PCB board is double-layered and has a copper drop on both sides. Therefore, the upper layer copper foil can be removed first by using a touch-sensitive method. However, the material substrate 101' can also be used to form a first a guide An electric layer 11 (for example, a copper foil) is on a first surface of the substrate structure. Further, a material substrate on which an electroplated copper foil has been formed may be directly used. Next, please refer to FIG. 2B to form a plurality of drill holes 105. In the substrate structure 100, the holes 105 penetrate the substrate structure. In order to achieve better process efficiency, multiple substrate structures can be stacked and mechanically synchronized drilling can be performed to reduce the manufacturing cost. In one example, the diameters of the drill holes 1〇5 are substantially 〇5 mm. Then, a bonding layer 115 is formed on a second surface opposite to the first surface of the substrate structure 110 to drill the holes. One end of 1 〇 5 is covered. In one embodiment, the adhesive tape having the adhesive layer 115 is adhered to the second side of the substrate structure to remove the release film on the adhesive layer. In another embodiment, Directly coating the dry layer of the bonding layer 115 or using a substrate-free bonding method on the second side of the substrate structure 100. Next, a second conductive layer 120 (e.g., copper foil) is formed on the bonding layer 115 as shown in Fig. 2D Then 'the step of forming the inner wall metallization of the borehole 105. 3A The -3C diagram shows a cross-sectional view of the steps of forming a metallized conductive layer in a mechanical borehole in accordance with an embodiment of the present invention. See Figure 3A, which shows a cross-sectional view of the area near the borehole 105. The second conductive layer 120 is exposed inside to facilitate direct contact of the subsequent metallization layer. In an embodiment of the invention, a portion of the first surface of the substrate structure is removed from one end of the holes The bonding layer removes the bonding layer 115 at the bottom of the drilling crucible 5 with a chemical solvent, as shown in Fig. 3B. EL98046/9042-A42225TW/fmal/ 10 201128809 Next, please refer to FIG. 3C to implement a metallization a process (such as electroplating, sputtering or chemical vapor deposition), a metal layer 135 is formed on the inner sidewalls and the bottom of the holes 105, wherein the second conductive layer 12 of the second surface can be formed by the metal Layer 135 leads to the first conductive layer 11 of the first side (ie, the cathode and anode electrodes 112, 114 that are subsequently patterned). Referring to Figure 2E, a patterned line is formed on the solid crystal surface. The first and second conductive layers are patterned separately to form a circuit pattern on the first side and the second side of the substrate structure. In one embodiment, the second conductive layer 12 is patterned into an electrode circuit structure by applying a lithography and side step, including a portion of the die pad 124 and a portion of the wire pad 122. In other embodiments, the plating layer may be added according to actual needs to facilitate the placement of the led die on the conductive line. Referring to FIG. 2F, a light-emitting diode chip is packaged on the second surface of the substrate structure and electrically connected to the circuit pattern. For example, an LED die 145 is die bonded to the die pad and the wire 14 is connected to the LED die 145 and the pad 122. Thereafter, a glue is molded and covers the second side of the raft structure, for example, the sealant 132 is coated with the LED die and the solid crystal wire in a transfer molding process as a package. Body lens 130. After the sealing step is completed, the substrate structure is cut along the outer edge of a package region formed by the holes to form the light-emitting diode package structure, that is, the fully-coated side-mounted LED package is completed. To achieve the low cost and high functionality of small size requirements, the tin area is complete and maximized, and the PCB thickness is not limited. The large size lens for optical requirements can maximize the coverage of the PCB without worrying about the problem of overflowing the tin hole. Furthermore, the package can also be used for

EL98046/9042-A42225TW/fmal/ H 201128809 top-looker型封裝體。 第2G圖係顯示根據本發明實施例之全包覆式側設塑 LED封裝體的側立示意圖。在陰極和陽極電極112、U4 之間設置有一防焊漆(綠漆)層150以防止電極之間短路。 再者’由於側設型LED封裝體僅一面與封裝基底接觸,因 此於部分實施例中上方的鑽孔105,可省略。於一實施例 中’該多個四分之一機械鑽孔105包括兩個四分之一機械 鑽孔於側設型LED封裝體的下方,而上方的鑽孔丨〇5,可省 略。 第4A和4B圖係顯示根據本發明之實施例以機械鑽孔 及銅箔黏貼製程形成之全包覆膠式側設型LED封裝體應用 於光學式觸控螢幕系統的示意圖。於第4A圖中,一光學 式觸控螢幕系統400包括顯示面板410,以及兩個以上的 LED發射器420及CMOS接受器做為偵測觸控訊號的元 件。上述LED發射器420可使用全包覆膠式側設型LED 封裝體設置於顯示面板410的頂角,如第4B圖所示。 根據本發明再一實施例,提供一種顯示裝置包括一顯 示面板410以及兩個以上發光二極體封裝結構420做為發 射器,以及兩各以上的CMOS感測器(圖未繪示)做為偵測 觸控訊號的元件,發光二極體封裝結構420及CMOS感測 器以成對方式設置於顯示面板的角落上。該發光二極體封 裝結構420包括一基底,該基底具有多個四分之一的圓形 通孔設置在該基底之角落上。一圖案化之第一導電層設置 於該基底之一表面上。一圖案化之第二導電層設置於相對 該基底表面之另一表面上。一黏結層設置於該圖案化之第 EL98046/9042-A42225TW/fmal/ η 201128809 二導電層與該基底之該表面之間。一金屬層形成於該些基 底之圓形通孔的内側壁。一發光二極體晶片設置於該圖案 化之第二導電層上’並藉由該金屬層電性連接該圖案化之 第一導電層。一光學透鏡完全包覆該晶片及該基底之該表 面。 本發明所揭露各實施例的優點在於,利用PCB及銅箔 的黏貼技術,可以先行依孔徑需求,將多片PCB同時鑽孔, PCB的板厚也不受限制,不像傳統半盲孔鑽法,必須使用 ••價格較高的厚PCB板。上層銅雜貼後直接覆蓋住鑽孔, 在依實際設計需求,將銅箔蝕刻成圖案化線路,避免因傳 統黏貼ΡΙ至已蝕刻好的線路所導致的黏貼公差問題,銅箔 承文封膠的能力也遠遠大過ΡΙ的能力,因此能達到小尺寸 全包覆封膠體的低成本侧設型需求。 本發明雖以各種實施例揭露如上,然其並非用以限定 本發明的範圍,任何所屬技術領域中具有通常知識者,在 不脫離本發明之精神和範圍内,當可做些許的更動與潤 飾,因此本發明之保遵範圍當視後附之申請專利範圍所界 定者為準。 【圖式簡單說明】 第1圖係顯示傳統側設型LED封裝體的立體示意圖; 第2A-2G圖係顯示根據本發明之實施例的倒設型LED 封裝體的製造方法各步驟的示意圖; EL98046/9042-A42225TW/fmal/ 13 201128809 第3A-3C圖係顯示根據本發明之實施例於機械鑽孔内 形成金屬化導電層各步驟的剖面示意圖;以及 第4A和4B圖係顯示根據本發明之實施例以機械鑽孔 及銅箔黏貼製程形成之全包覆膠式側設型LED封裝體應用 於光學式觸控螢幕系統的示意圖。 【主要元件符號說明】 10〜側設型LED封裝體; 12〜基板; 14〜封膠; 16a、16b〜電極層; 16c〜額外的電極墊; 100〜基板結構; 101〜素材基板; 105、105’〜鑽孔; 110〜第一導電層; 112、114〜陰極和陽極電極; 115〜黏結層; 120〜第二導電層; 122〜金屬線焊墊; 124〜固晶墊; 130〜透鏡; 132〜封膠; 135〜金屬層; EL98046/9042-A42225TW/fmal/ 14 201128809 140〜金屬線; 145〜LED晶粒; 150〜防焊漆(綠漆)層; 400〜光學式觸控螢幕系統; 410〜顯示面板; 420〜全包覆膠式側設型LED封裝體EL98046/9042-A42225TW/fmal/ H 201128809 Top-looker type package. Figure 2G is a side elevational view showing a fully wrapped side-mounted LED package in accordance with an embodiment of the present invention. A solder resist (green lacquer) layer 150 is disposed between the cathode and anode electrodes 112, U4 to prevent shorting between the electrodes. Furthermore, since the side-mounted LED package is in contact with the package substrate on only one side, the upper drill hole 105 in some embodiments can be omitted. In one embodiment, the plurality of quarter mechanical bores 105 include two quarters of mechanical boreholes underneath the side-mounted LED packages, while the upper bores 5 are omitted. 4A and 4B are schematic views showing the application of a fully covered plastic side-mounted LED package formed by a mechanical drilling and copper foil bonding process to an optical touch screen system in accordance with an embodiment of the present invention. In FIG. 4A, an optical touch screen system 400 includes a display panel 410, and two or more LED emitters 420 and CMOS receivers as components for detecting touch signals. The LED emitter 420 can be disposed on the top corner of the display panel 410 using a fully encapsulated side-mounted LED package, as shown in FIG. 4B. According to still another embodiment of the present invention, a display device includes a display panel 410 and two or more LED package structures 420 as a transmitter, and two or more CMOS sensors (not shown) as The components for detecting the touch signal, the LED package structure 420 and the CMOS sensor are disposed in a pair on the corner of the display panel. The LED package structure 420 includes a substrate having a plurality of quarter-circular vias disposed in the corners of the substrate. A patterned first conductive layer is disposed on a surface of the substrate. A patterned second conductive layer is disposed on the other surface opposite the surface of the substrate. A bonding layer is disposed between the patterned EL98046/9042-A42225TW/fmal/n 201128809 two conductive layers and the surface of the substrate. A metal layer is formed on the inner side walls of the circular through holes of the bases. A light emitting diode chip is disposed on the patterned second conductive layer ′ and electrically connected to the patterned first conductive layer by the metal layer. An optical lens completely covers the wafer and the surface of the substrate. The advantages of the embodiments disclosed in the present invention are that, by using the adhesion technology of the PCB and the copper foil, multiple PCBs can be drilled at the same time according to the aperture requirement, and the thickness of the PCB is not limited, unlike the conventional semi-blind hole drill. The law must use a thick PCB board with a higher price. The upper layer of copper paste directly covers the drill hole. According to the actual design requirements, the copper foil is etched into a patterned circuit to avoid the problem of adhesive tolerance caused by the traditional adhesive tape to the etched circuit. The copper foil bearing sealant The ability is also far greater than the ability to achieve a low-cost side-mounted type of small-size fully encapsulated sealant. The present invention has been disclosed in the above various embodiments, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can make a few changes and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a conventional side-mounted LED package; FIG. 2A-2G is a schematic view showing steps of a method of manufacturing an inverted LED package according to an embodiment of the present invention; EL98046/9042-A42225TW/fmal/ 13 201128809 3A-3C is a schematic cross-sectional view showing the steps of forming a metallized conductive layer in a mechanical borehole in accordance with an embodiment of the present invention; and FIGS. 4A and 4B are diagrams showing the present invention. The embodiment is a schematic diagram of a fully covered plastic side-mounted LED package formed by mechanical drilling and copper foil bonding process applied to an optical touch screen system. [Description of main components] 10~ side-mounted LED package; 12~substrate; 14~ sealant; 16a, 16b~electrode layer; 16c~additional electrode pad; 100~substrate structure; 101~material substrate; 105'~drilled; 110~first conductive layer; 112,114~cathode and anode electrode; 115~bonded layer; 120~second conductive layer; 122~metal wire pad; 124~solid crystal pad; 130~lens ; 132 ~ sealant; 135 ~ metal layer; EL98046/9042-A42225TW/fmal/ 14 201128809 140 ~ metal wire; 145 ~ LED die; 150 ~ solder resist (green paint) layer; 400 ~ optical touch screen System; 410~ display panel; 420~ fully covered plastic side-mounted LED package

EL98046/9042-A42225TW/fmay 15EL98046/9042-A42225TW/fmay 15

Claims (1)

201128809 七、申請專利範圍: 1. 一種發光二極體封裝結構的製造方法,包括: 提供一基板結構,該基板結構由至少一基材所構成; 形成一第一導電層於該基板結構的一第一面上; 在該基板結構上形成多個鑽孔,該些鑽孔係穿透該基 板結構, 形成一黏結層於相對該基板結構之該第一面的一第二 面上,以將該些鑽孔之一端覆蓋住; 形成一第二導電層於該黏結層上; 自該基板結構的該第一面,由該些鑽孔的一端内移除 部份的該黏結層; 沉積一金屬層於該基板結構的第一面上,並形成在該 些鑽孔的内側壁及底部上; 分別圖案化該第一和第二導電層以形成一電路圖案於 該基板結構之第一面及該第二面上; 封裝一發光二極體晶粒於該基板結構的第二面上,並 與該電路圖案電性連接; 模鑄一封膠並覆蓋住該基板結構的第二面;以及 沿該些鑽孔所構成的一封裝區域的外緣,切割該基板 結構以形成該發光二極體封裝結構。 2. 如申請專利範圍第1項所述之發光二極體封裝結構 的製造方法,其中該基材包括一 PCB基板。 3. 如申請專利範圍第1項所述之發光二極體封裝結構 的製造方法,其中該第一導電層為一銅箔。 4. 如申請專利範圍第1項所述之發光二極體封裝結構 EL98046/9042-A42225TW/final/ 16 201128809 的製造方法,其中該第一導電層被圖案化成一陰極與一陽 極電極。 5. 如申請專利範圍第1項所述之發光二極體封裝結構 的製造方法’其中該些鑽孔的形成步驟包括將多片基材堆 疊後,再對該些堆疊之基材同時進行機械式鐵孔。 6. 如申請專利範圍第1項所述之發光二極體封裝結構 的製造方法,其中該該黏結層的形成步驟包括塗佈或使用 無基材黏著方式形成於該基板的第二面上。201128809 VII. Patent application scope: 1. A method for manufacturing a light emitting diode package structure, comprising: providing a substrate structure, wherein the substrate structure is composed of at least one substrate; forming a first conductive layer on the substrate structure Forming a plurality of drill holes on the substrate structure, the drill holes penetrating the substrate structure to form a bonding layer on a second surface opposite the first surface of the substrate structure to One of the holes is covered; a second conductive layer is formed on the bonding layer; and from the first side of the substrate structure, a portion of the bonding layer is removed from one end of the holes; a metal layer on the first surface of the substrate structure and formed on the inner sidewalls and the bottom of the holes; respectively patterning the first and second conductive layers to form a circuit pattern on the first side of the substrate structure And the second surface; encapsulating a light emitting diode die on the second surface of the substrate structure and electrically connecting with the circuit pattern; molding a glue and covering the second surface of the substrate structure; And along these holes The outer edge of a package region is formed, and the substrate structure is cut to form the light emitting diode package structure. 2. The method of fabricating a light emitting diode package structure according to claim 1, wherein the substrate comprises a PCB substrate. 3. The method of fabricating a light emitting diode package structure according to claim 1, wherein the first conductive layer is a copper foil. 4. The method of fabricating a light emitting diode package structure of the invention of claim 1, wherein the first conductive layer is patterned into a cathode and an anode electrode, as in the method of manufacturing the light emitting diode package structure EL98046/9042-A42225TW/final/16 201128809. 5. The method of manufacturing a light emitting diode package structure according to claim 1, wherein the forming of the holes comprises stacking a plurality of substrates, and simultaneously mechanically stacking the substrates. Iron hole. 6. The method of fabricating a light emitting diode package according to claim 1, wherein the step of forming the bonding layer comprises coating or forming a second surface of the substrate by using a substrate-free adhesion. 7. 如申請專利範圍第1項所述之發光二極體封裝結構 的製造方法,其中該該第二導電層為一銅箔。 8. 如申請專利範圍第1項所述之發光二極體封裴結構 的製造方法,其中該第二導電層被圖案化成一固晶塾和一 輝^整*。 9. 一種發光二極體封裝結構的製造方法,包括: 提供一基板結構,該基板結構由直少一基材所構成, 該基材具有一第一金屬層形成於一該基材之第一面上; 形成多個鑽孔於該基板結構内,該些鑽孔構成一封裝 區域; 形成一黏結層於相對該基板結構之該第一面的一第二 面上,以將該些鑽孔之一端覆蓋住, 形成一第二金屬層於該黏結層上; 自該基板結構的該第一面,由該碴鑽孔的一端内移除 部份的該黏結層; 沉積一金屬層於該基板結構的第〆面上’並形成在該 些鑽孔的内側壁及底部上; EL98046/9042-A42225TW/fmal/ 17 201128809 分別圖案化該第一和第二導電層以形成一電路 該基板結構之第一面及該第二面上; 案於 封裝一發光二極體晶粒於該基板結構的第二面 與該電路圖案電性連接; ’龙 模鑄一封膠並覆蓋住該基板結構的第二面;以及 沿該些鑽孔所構成的一封裝區域的外緣,切割誃 結構以形成該發光二極體封裝結構。 Λ 土板 10.如申請專利範圍第9項所述之發光二極體 構的製造方法,其中該基材包括一 PCB基板。、又結 11.如申請專利範圍第9項所述之發光二極體 構的製造方法,其中該第一導電層為一銅箔。 、結 1.2.如申請專利範圍第9項所述之發光二極體 構的製造方法,其中該第—導電層被圖案化成 陽極電極。 β — 13.如申請專利範圍第9項所述之發光二極體封 構的製造方法’其中該些職的形成步驟包括將多片^ 堆疊後,再對該些堆疊之基材同時進行機械式鑽孔。 14. 如申請專利範圍第9項所述之發光二極體封裝結 構的製造方法’其中該該黏結層的形成步驟包括塗佈 用無基材黏著方式形成於該基板的第二面上。 15. 如申請專利範圍第9項所述之發光二極體封裝結 構的製造方法’其中該該第二導電層為-銅羯。 16.如申請專利範圍第9項所述之發光二極體封裝結 構的製造方法,其中該第二導電層被圖#化成—固晶塾和 一厚塾。 EL98046/9042-A42225TW/fmay 18 201128809 17. 一種發光二極體封裝結構,包括: 一基底,該基底具有多個四分之—的圓形通孔設置在 該基底之角落上; -圖案化之第-導電層,設置於該基底之—表面上; 一圖案化之第二導電層’設置於相對該基底表面之另 一表面上; -黏結層’設置於該圖案化之第二導電層與該基底之 該表面之間;7. The method of fabricating a light emitting diode package structure according to claim 1, wherein the second conductive layer is a copper foil. 8. The method of fabricating a light emitting diode package structure according to claim 1, wherein the second conductive layer is patterned into a solid crystal germanium and a germanium. 9. A method of fabricating a light emitting diode package structure, comprising: providing a substrate structure, the substrate structure being composed of a substrate having a first metal layer formed on a first substrate Forming a plurality of holes in the substrate structure, the holes forming a package region; forming a bonding layer on a second surface opposite the first surface of the substrate structure to drill the holes Covering one end to form a second metal layer on the bonding layer; from the first side of the substrate structure, removing a portion of the bonding layer from one end of the crucible hole; depositing a metal layer thereon The first surface of the substrate structure is formed on the inner side wall and the bottom of the holes; EL98046/9042-A42225TW/fmal/ 17 201128809 respectively pattern the first and second conductive layers to form a circuit The first surface and the second surface of the substrate are electrically connected to the circuit pattern on the second surface of the substrate structure; the dragon mold casts a glue and covers the substrate structure The second side; along with these An outer edge of a package consisting of a hole area, to form the cleavage structure Yi light emitting diode package structure. A method of manufacturing a light-emitting diode according to claim 9, wherein the substrate comprises a PCB substrate. The method of manufacturing the light-emitting diode according to claim 9, wherein the first conductive layer is a copper foil. The method of manufacturing the light-emitting diode according to claim 9, wherein the first conductive layer is patterned into an anode electrode. A method for manufacturing a light-emitting diode package as described in claim 9 wherein the forming step of the jobs comprises stacking a plurality of sheets and then mechanically laminating the stacked substrates simultaneously. Drilling. 14. The method of fabricating a light-emitting diode package according to claim 9, wherein the step of forming the adhesive layer comprises coating the second surface of the substrate with a substrate-free adhesion. 15. The method of fabricating a light emitting diode package structure according to claim 9, wherein the second conductive layer is - copper beryllium. 16. The method of fabricating a light emitting diode package structure according to claim 9, wherein the second conductive layer is formed into a solid crystal germanium and a thick germanium. EL98046/9042-A42225TW/fmay 18 201128809 17. A light emitting diode package structure comprising: a substrate having a plurality of quarter-shaped circular through holes disposed at corners of the substrate; - patterned a first conductive layer disposed on a surface of the substrate; a patterned second conductive layer ' disposed on the other surface opposite to the substrate surface; - a bonding layer disposed on the patterned second conductive layer Between the surfaces of the substrate; 一金屬層,形成於該些基底之圓形通孔的内側壁; 一發光二極體晶片,設置於該圖案化之第二導電層 上,並藉由該金屬層電性連接該圖案化之第一導電層;以 .及 , 一光學透鏡,係完全包覆該晶片及該基底之該表面。 18. 如申請專利範圍第17項所述之發光二極體封裝結 構,其中該圖案化之第一導電層包括一陰極及一陽極❶ 19,如申請專利範圍第18項所述之發光二極體封裝結 構’更包括一防焊漆層設置於該陰極與該陽極之間。 20. 如申請專利範圍第17項所述之發光二極體封裝結 構,其中該圖案化之第二導電層包括兩導電性相異之導電 區域,該兩導電區域彼此分離設置。 21. 如申請專利範圍第2〇項所述之發光二極體封裝結 構,其中該晶片設置在該兩導電區域其中之一,並藉由— 金屬導線電性連接於該兩導電區域其中另一。 22. —種顯示裝置,包括: 一顯示面板;以及 EL98046/9042-A42225TW/fmal/ 1D 201128809 多個發光二極體封裝結構及多個感測器,該些發光二 極體封裝結構及該些感測器係成對地設置於該顯示面板的 角落,各該發光二極體結構用以發射一光源’各該感測器 用以作為偵測觸控訊號的元件; 其中該發光二極體封裝結構包括: 一基底,該基底具有多個四分之一的圓形通孔設 置在該基底之角落上, 一圖案化之第一導電層’ 5又置於該基底之一表面 上; 一圖案化之第二導電層,設置於相對該基底表面 之另一表面上; 一黏結層,設置於該圖案化之第二導電層與該基 底之'該表面之間, 一金屬層,形成於該些基底之圓形通孔的内側壁; 一發光二極體晶片,設置於該圖案化之第二導電 層上,並藉由該金屬層電性連接該圖案化之 第一導電層;以及 一光學透鏡,係完全包覆該晶片及該基底之該表 面。 23·如申請專利範圍第22項所述之顯示裝置,其中該 感測器為CMOS感測器。 24. 如申請專利範圍第22項所述之顯示裝置,其中該 圖案化之第一導電層包括一陰極及一陽極。 25. 如申請專利範圍第24項所述之顯示裝置,更包括 一防焊漆層設置於該陰極與該陽極之間。 EL98046/9042-A42225TW/final/ 20 201128809 26. 如申請專利範圍第22項所述之發光二極體封裝結 構,其中該圖案化之第二導電層包括兩導電性相異之導電 區域’該兩導電區域彼此分離設置。 27. 如申請專利範圍第26項所述之顯示裝置,其中該 晶片設置在該兩導電區域其中之一,並藉由一金屬導線電 性連接於該兩導電區域其中另一。a metal layer is formed on the inner sidewall of the circular via hole of the substrate; a light emitting diode chip is disposed on the patterned second conductive layer, and electrically connected to the patterned layer by the metal layer a first conductive layer; and an optical lens completely covering the surface of the wafer and the substrate. 18. The light emitting diode package structure of claim 17, wherein the patterned first conductive layer comprises a cathode and an anode 19, such as the light emitting diode according to claim 18 The body package structure further includes a solder resist layer disposed between the cathode and the anode. 20. The light emitting diode package structure of claim 17, wherein the patterned second conductive layer comprises two electrically conductive regions of different conductivity, the two conductive regions being disposed apart from each other. 21. The light emitting diode package structure of claim 2, wherein the wafer is disposed in one of the two conductive regions, and is electrically connected to the two conductive regions by another metal wire. . 22. A display device comprising: a display panel; and an EL98046/9042-A42225TW/fmal/1D 201128809 plurality of light emitting diode package structures and a plurality of sensors, the light emitting diode package structures and the The sensor is disposed in pairs at a corner of the display panel, and each of the LEDs is configured to emit a light source, wherein each of the sensors is used as a component for detecting a touch signal; wherein the LED package is The structure comprises: a substrate having a plurality of quarter-shaped circular vias disposed on a corner of the substrate, a patterned first conductive layer '5 being placed on a surface of the substrate; a pattern a second conductive layer disposed on the other surface opposite to the surface of the substrate; a bonding layer disposed between the patterned second conductive layer and the surface of the substrate, a metal layer formed thereon An inner sidewall of the circular through hole of the substrate; a light emitting diode chip disposed on the patterned second conductive layer, and electrically connected to the patterned first conductive layer by the metal layer; optical lens, The completely coated surface of the substrate and the wafer. The display device of claim 22, wherein the sensor is a CMOS sensor. 24. The display device of claim 22, wherein the patterned first conductive layer comprises a cathode and an anode. 25. The display device of claim 24, further comprising a solder resist layer disposed between the cathode and the anode. The illuminating diode package structure of claim 22, wherein the patterned second conductive layer comprises two electrically conductive regions of different conductivity. The conductive regions are disposed apart from each other. 27. The display device of claim 26, wherein the wafer is disposed in one of the two conductive regions and is electrically connected to the other of the two conductive regions by a metal wire. EL98046/9042-A42225TW/fmal/ 21EL98046/9042-A42225TW/fmal/ 21
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