TW201126689A - Electrostatic discharge protection device - Google Patents

Electrostatic discharge protection device Download PDF

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Publication number
TW201126689A
TW201126689A TW99102530A TW99102530A TW201126689A TW 201126689 A TW201126689 A TW 201126689A TW 99102530 A TW99102530 A TW 99102530A TW 99102530 A TW99102530 A TW 99102530A TW 201126689 A TW201126689 A TW 201126689A
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TW
Taiwan
Prior art keywords
unit
coupled
trigger
discharge
protection device
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TW99102530A
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Chinese (zh)
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TWI406385B (en
Inventor
Ming-Dou Ker
Che-Lun Hsu
Yeh-Ning Jou
Geeng-Lih Lin
Yeh-Jen Huang
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Vanguard Int Semiconduct Corp
Univ Nat Chiao Tung
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Priority to TW99102530A priority Critical patent/TWI406385B/en
Publication of TW201126689A publication Critical patent/TW201126689A/en
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Publication of TWI406385B publication Critical patent/TWI406385B/en

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

An electrostatic discharge (ESD) protection device including a first discharge unit, a second discharge unit, a first trigger unit, and a second trigger unit is disclosed. The first discharge unit is serially connected to the second discharge unit between a first pad and a second pad to release ESD current. When an ESD event occurs, the first trigger unit triggers the first discharge unit. When the first discharge unit is triggered, the second trigger unit triggers the second discharge unit.

Description

201126689 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種靜電放電（Electrostatic Discharge ; ESD)保護裝置，特別是有關於一種具有高效率 觸發電路的高壓靜電放電保護裝置。 【先前技術】 靜電放電（Electrostatic Discharge ;以下簡稱ESD)所造 成之元件損害對積體電路產品來說已經成為最主要的可靠 • 度問題之一。尤其是隨著尺寸不斷地縮小至深次微米之穋 度’金氧半導體之閘極氧化層也越來越薄，積體電路更容 易因靜電放電現象而遭受破壞。為了避免ESD現象破壞積 體電路’一般的解決方式係設置一 ESD保護裝置於積體電 路之中。 第1圖為習知ESD保護裝置。如圖所示，ESD保護裝 置100具有偵測電路110以及保護電路130。當ESD事件 發生在接觸塾121 並且接觸塾122為接地(ground)電位 i 時’偵測電路110觸發保護電路130,用以釋放ESD電流。 然而，由於偵測電路110具有電容C以及電阻R，故ESP 保護裝置100所佔用的空間較大。 第2圖為另一習知ESD保護裝置的剖面圖。ESD保護 裝置200係為一低壓基納（zener)觸發矽控整流器。然而esP 保護裝置200無法應用於高壓的元件，如led、LCD驅動 積體電路、或是電源管理積體電路之中。 【發明内容】 本發明提出一種靜電放電保護裝置，包括一第一放電 98019/0516-A42246-TW/Final 3 201126689 單元、一第二放電單元、一第一觸發單元以及一第二觸發 單元。第一及第二放電單元串聯於一第一接觸墊與一第二 接觸墊之間，用以釋放一靜電放電電流。第一觸發單元包 括一第一電晶體以及至少一第一二極體。第一電晶體與第 一二極體串聯於第一接觸墊與第一放電單元之間。當一靜 電放電事件發生時，第一觸發單元觸發第一放電單元。第 二觸發單元包括一第二電晶體，並耦接於第一接觸墊與第 二放電單元之間。當第一放電單元被觸發時，第二電晶體 觸發第二放電單元。 本發明提供另一種靜電放電保護裝置，包括一第一放 電單元、一第二放電單元、一第一觸發單元以及一第二觸 發單元。第一及第二放電單元串聯於一第一接觸墊與一第 二接觸墊之間。第一觸發單元耦接於第一接觸墊與第一放 電單元之間。第二觸發單元耦接於第一接觸墊與第二放電 單元之間。當第一觸發單元觸發第一放電單元時，第二觸 發單元觸發第二放電單元。 為讓本發明之特徵和優點能更明顯易懂，下文特舉出 較佳實施例，並配合所附圖式，作詳細說明如下： 【實施方式】 本發明所提出的ESD保護裝置係為一高壓（high voltage ; HV)裝置，並具有高效率的觸發電路。第3圖為 本發明之ESD保護裝置之示意圖。如圖所示，ESD保護裝 置300耦接於接觸墊351與353之間。當一 ESD事件發生 在接觸塾353，並且接觸塾351為接地(grounding)電位時， ESD保護裝置300可將ESD電流釋放至地。 98019/0516-A42246-TW/Final 4 201126689 如圖所示，ESD保護裝置300包括放電單元311、313 及觸發單元331、333。放電單元311與313串聯於接觸墊 351與353之間。本發明並不限定放電單元311與313的 種類’稍後將說明放電單元311與313的可能實施例。 在本實施例中’觸發單元331耦接於接觸墊353與放 電單元311之間。當ESD事件發生於接觸墊353，並且接 觸墊351為接地電位時，觸發單元331觸發放電單元311。 因此，一電流路徑形成於接觸墊353、觸發單元331、放電 • 單元311以及接觸墊351之間。 觸發單元333耦接於接觸墊353與放電單元313之間。 當觸發單元331觸發放電單元311時，觸發單元333觸發 放電單元313。也就是說，當上述電流路徑形成後，觸發 單元333便可觸發放電單元313，使得ESD電流由接觸墊 353開始，經由放電單元313、311及接觸墊351，而釋放 至地。 第4A圖為本發明之ESD保護裝置之一可能實施例。 如圖所示，觸發單元331包括電晶體MP1以及二極體模組 431。觸發單元333包括電晶體MP2。在本實施例中，觸發 單元331與333可形成一電流鏡（current mirror)電路。 在本實施例中，電晶體MP1& MP2均為P型電晶體， 但並非用以限制本發明。電晶體MP1之閘極耦接汲極，其 源極耦接接觸墊353，其汲極耦接二極體模組431的陰極。 電晶體Mm之閘極耦接電晶體Mpl之閘極，其源極耦接接 觸墊353，其汲極耦接放電單元313。 如圖所示，二極體模組431具有二極體D广Dn。二極 98019/0516-A42246-TW/Final 5 201126689 排列方式如第4A圖所示，其串聯於電曰體Μ 與放電單元311之間。在由㈣於電曰曰體MP1 為二極體模組431的4 ::::二極體Di的陰極作 本發明並不限===體〜之， -可能實施例中，可僅且=的-極體數量。在 極體的陽極耦接放電單元 ]中該一201126689 VI. Description of the Invention: [Technical Field] The present invention relates to an Electrostatic Discharge (ESD) protection device, and more particularly to a high voltage electrostatic discharge protection device having a high efficiency trigger circuit. [Prior Art] Component damage caused by Electrostatic Discharge (ESD) has become one of the most important reliability problems for integrated circuit products. In particular, as the size continues to shrink to deeper micrometers, the gate oxide layer of the MOS semiconductor is also thinner and thinner, and the integrated circuit is more susceptible to damage due to electrostatic discharge. In order to prevent the ESD phenomenon from damaging the integrated circuit, the general solution is to provide an ESD protection device in the integrated circuit. Figure 1 shows a conventional ESD protection device. As shown, the ESD protection device 100 has a detection circuit 110 and a protection circuit 130. When the ESD event occurs at the contact port 121 and the contact port 122 is the ground potential i, the detection circuit 110 triggers the protection circuit 130 to release the ESD current. However, since the detecting circuit 110 has the capacitance C and the resistance R, the space occupied by the ESP protection device 100 is large. Figure 2 is a cross-sectional view of another conventional ESD protection device. The ESD protection device 200 is a low voltage Zener triggered voltage controlled rectifier. However, the esP protection device 200 cannot be applied to high voltage components such as LEDs, LCD driver integrated circuits, or power management integrated circuits. SUMMARY OF THE INVENTION The present invention provides an electrostatic discharge protection device including a first discharge 98019/0516-A42246-TW/Final 3 201126689 unit, a second discharge unit, a first trigger unit, and a second trigger unit. The first and second discharge cells are connected in series between a first contact pad and a second contact pad for releasing an electrostatic discharge current. The first trigger unit includes a first transistor and at least one first diode. The first transistor and the first diode are connected in series between the first contact pad and the first discharge cell. When an electrostatic discharge event occurs, the first trigger unit triggers the first discharge unit. The second trigger unit includes a second transistor and is coupled between the first contact pad and the second discharge unit. The second transistor triggers the second discharge unit when the first discharge unit is triggered. The present invention provides another electrostatic discharge protection device including a first discharge unit, a second discharge unit, a first trigger unit, and a second trigger unit. The first and second discharge cells are connected in series between a first contact pad and a second contact pad. The first trigger unit is coupled between the first contact pad and the first discharge unit. The second trigger unit is coupled between the first contact pad and the second discharge unit. When the first trigger unit triggers the first discharge unit, the second trigger unit triggers the second discharge unit. In order to make the features and advantages of the present invention more comprehensible, the preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. High voltage (HV) device with high efficiency trigger circuit. Figure 3 is a schematic illustration of the ESD protection device of the present invention. As shown, the ESD protection device 300 is coupled between the contact pads 351 and 353. When an ESD event occurs at the contact 塾 353 and the contact 塾 351 is a grounding potential, the ESD protection device 300 can release the ESD current to ground. 98019/0516-A42246-TW/Final 4 201126689 As shown, the ESD protection device 300 includes discharge cells 311, 313 and triggering units 331, 333. The discharge cells 311 and 313 are connected in series between the contact pads 351 and 353. The present invention does not limit the kind of discharge cells 311 and 313'. A possible embodiment of the discharge cells 311 and 313 will be described later. In this embodiment, the trigger unit 331 is coupled between the contact pad 353 and the discharge unit 311. When the ESD event occurs on the contact pad 353, and the contact pad 351 is at the ground potential, the trigger unit 331 triggers the discharge unit 311. Therefore, a current path is formed between the contact pad 353, the trigger unit 331, the discharge unit 311, and the contact pad 351. The trigger unit 333 is coupled between the contact pad 353 and the discharge unit 313. When the trigger unit 331 triggers the discharge unit 311, the trigger unit 333 triggers the discharge unit 313. That is, after the current path is formed, the trigger unit 333 can trigger the discharge unit 313 so that the ESD current starts from the contact pad 353, and is discharged to the ground via the discharge cells 313, 311 and the contact pad 351. Figure 4A is a possible embodiment of the ESD protection device of the present invention. As shown, the trigger unit 331 includes a transistor MP1 and a diode module 431. The trigger unit 333 includes a transistor MP2. In this embodiment, the trigger units 331 and 333 can form a current mirror circuit. In the present embodiment, the transistors MP1 & MP2 are P-type transistors, but are not intended to limit the present invention. The gate of the transistor MP1 is coupled to the drain, the source of which is coupled to the contact pad 353, and the drain of the transistor is coupled to the cathode of the diode module 431. The gate of the transistor Mm is coupled to the gate of the transistor Mpl, the source of which is coupled to the contact pad 353, and the drain of the transistor is coupled to the discharge unit 313. As shown, the diode module 431 has a diode D wide Dn. Dipole 98019/0516-A42246-TW/Final 5 201126689 The arrangement is as shown in Fig. 4A, which is connected in series between the electric discharge body and the discharge unit 311. In the fourth invention, the cathode of the 4::: diode Di of the diode module 431 is not limited to === body~, in a possible embodiment, = - the number of polar bodies. In the anode of the pole body coupled to the discharge unit]

沒極。 ，、◎軸接f晶體MPJ 雷壓fb由t制二極體的數量（即控制二極體模組431的崩潰 L事Si·。舉例而言，在正常工作模式(未發生 時=如 作電壓小於二極體模組431的崩潰電屋 時’觸發早7° 331不會提供觸發電流予放電單元3U。由 於電流路徑無法形成於接觸墊353、觸發單元331、放電單 兀311與接觸墊351之間，因此，ESD保護裝置不會 動作。 然而，在ESD保護模式（發生ESD事件）下，由於esd 電壓遠大於二極體模組431的崩潰電壓，故觸發單元33ι 提供觸發電流予放電單元311，用以觸發放電單元3ιι。因 此，一電流路徑形成於接觸墊353、觸發單元331、放電單 元311與接觸墊351之間。 在放電單元311被觸發後，觸發單元333將提供一觸 發電流予放電單元313，用以觸發放電單元313。當放電單 元313及311均被觸發後，ESD電流便可由接觸墊353開 始’經由放電單元313、311，而釋放至地。 另外’在本實施例中，放電單元311及313分別為石夕 98019/0516-A42246-TW/Final 6 201126689 控整流器（silicon controlled rectifier ; SCR)411 及 413，作 並非用以限制本發明。在其它實施例中，本領域之技術人 員可利用其它具有放電導通功能的元件作為放電單元 及313。另外，由於矽控整流器的結構係為本領域人士所 深知，故不再贅述。 在本實施例中’矽控整流器411具有一陽極、一陰極 以及一觸發端。如圖所示，矽控整流器411之陽極輕接放 電單元313，其陰極耦接接觸墊351，其觸發端耦接二極體 模組431的陽極。在本實施例中，矽控整流器411的觸發 端具有Ρ型摻雜物。 同樣地，矽控整流器413亦具有一陽極、一陰極以及 一觸發端。矽控整流器413的陽極耦接接觸墊353，其陰 極耦接矽控整流器411的陽極，其觸發端耦接電晶體Μρ2 之没極。在本實施例中，矽控整流器413的觸發端亦具有 Ρ型摻雜物。 當ESD事件發生在接觸塾353，並且接觸墊351為接 地電位時’ ESD電壓可導通電晶體MP1。當電晶體Μρι的 没極電壓大於二極體模組431的崩潰電壓時，則將有一觸 發電流流入矽控整流器411的觸發端。 本領域人士均深知，矽控整流器具有一 npn電晶體以 及一 pnp電晶體。在矽控整流器411的觸發端(p+摻雜區） 接收到觸發電流後，矽控整流器411内的npn電晶體便會 被觸發。在npn電晶體被觸發後，便可提供另一觸發電流 予矽控整流器411内的pnp電晶體的基極，進而觸發矽控 整流器411内的pnp電晶體。 98019/0516-A42246-TW/Final 7 201126689 在矽控整流器411内的npn電晶體及pnp電晶體均被 觸發後’將有一電流路徑形成在接觸墊353、觸發單元 331、放電單元311及接觸墊351之間。藉由電流鏡的特性， 觸發單元333便可觸發放電元件313，使得ESO電流由接 觸墊353開始’經由放電元件313、311以及接觸墊351， 而釋放至地。 第4B圖為本發明之ESD保護裝置之另一可能實施 例。如圖所示，觸發單元331包括電晶體mN2。觸發單元 333包括電晶體MN1、二極體模組431以及電阻450。在本 實施例中’電晶體]ViNl及MN2均為：N型電晶體。 電晶體MN1之閘極輕接其没極，其源極柄接接觸墊 351 ’其汲極耦接二極體模組431之陽極。電阻45〇耦接於 電晶體mn1之閘極與源極之間。電晶體Mn2之閘極耦接電 晶體mn1之閘極’其汲極耦接放電單元313，其源極耦接 接觸墊351。 在本實施例中，放電單元311及313分別為矽控整流 器415及417。如圖所示，矽控整流器417具有一陽極、 一陰極以及一觸發端。矽控整流器417的陽極耦接接觸墊 353，其陰極耦接放電單元311，其觸發端耦接二極體模組 431之陰極。在本實施例中，矽控整流器417的觸發端具 有N型摻雜物。 矽控整流器415亦具有一陽極、一陰極以及一觸發端。 矽控整流器415的陽極耦接矽控整流器417之陰極，其陰 極耦接接觸墊351，其觸發端耦接電晶體Mn2之汲極。在 本實施例中，矽控整流器415的觸發端具有N型摻雜物。 98019/0516-A42246-TW/Final 〇 201126689 在本實施例中，當一 ESD事件發生在接觸墊353,並 且接觸墊35】Λ接地電位時，峡㈣事件所產生的暫態 電廢大於二極體模、组431 #崩潰電壓，故可導通電晶體I ，MW。因此，ESD電流可由接觸墊353開始，經由放電 單元313、311及接地墊351，而釋放至地。 第5圖為本發明之ESD保護裝置之另一示意圖。第$ 圖相似，3圖’不同之處在於’帛5圖多了觸發單元531 及放電單元511。在-可能實施例中，#—電流路徑形成 於接觸墊353、觸發單元331、放電單元311與接觸墊351 之間時，觸發單元333觸發放電單元313，並且觸發單元 531觸發放電單元511。由於觸發單元531的内部電路結構 與觸發單元333相同，並且放電單元511與313相同，故 不再贅述。 一第6圖為本發明之ESD保護裝置之另一示意圖。如圖 所不，ESD保護裝置600耦接於接觸墊651與653之間。 當ESD料發生在接觸塾653，並且接觸堅651為接地電 位時’ESD保護裝置600可將ESD電流由接觸墊653釋放 至接觸塾651。 在本實施例中，ESD保護裝置6〇〇包括，放電單元 611、613以及觸發單元631、633、幻5、637。放電單元 611及613串聯於接觸墊651與653之間。觸發單元631 耦接於接觸墊653與放電單元611之間。觸發單元633耦 接於接觸墊653與放電單元613之間。觸發單元635耦接 於接觸墊651與放電單元611之間。觸發單元637耦接於 接觸墊651與放電單元613之間。 ' 98019/0516-A42246-TW/Final n 201126689 在本實施例中，觸發單元631及633之一者會先觸發 相對應的放電單元，然後另一者再觸發相對應的放電單 元。舉例而言，在一可能實施例中，觸發單元631先觸發 放電單元611後，觸發單元633才會觸發放電單元613。 在另一可能實施例中，在觸發單元633觸發放電單元613 後，觸發單元631才觸發放電單元611。 同樣地，在一可能實施例中，當觸發單元635先觸發 放電單元611後，觸發單元637才會觸發放電單元613。 在另一可能實施例中，在觸發單元637觸發放電單元613 後，觸發單元635才觸發放電單元611。 由於放電單元611及613可被兩觸發單元所觸發，故 放電單元611及613的觸發電壓小於第1圖的放電單元311 及313的觸發電壓。 第7A圖為本發明之ESD保護裝置之另一可能實施 例。在本實施例中，當一第一電流路徑形成在接觸墊653、 觸發單元631與放電單元611之間時，觸發單元633才會 觸發放電單元613。同樣地，當一第二電流路徑形成在接 觸墊651、觸發單元637與放電單元613之間時，觸發單 元635才會觸發放電單元611。 在本實施例中，觸發單元631與633具有一電流鏡電 路，而觸發單元635與637具有另一電流鏡電路。另外， 觸發單元631的二極體數量等於觸發單元637的二極體數 量。 在一可能實施例中，第7A圖所示的觸發單元631的電 路架構等於觸發單元633的電路架構。在此實施例中，觸 98019/0516-A42246-TW/Final 10 201126689 發單元633的電路架構等於觸發單元631的電路架構。由 於觸發單元631、633與放電單元611及613之間的動作原 理與電路架構和第4A圖相同，故不再贅述。 同樣地，第7A圖所示的觸發單元635的電路架構可等 於觸發單元637的電路架構。在此實施例中，觸發單元637 的電路架構等於觸發單元635的電路架構。由於觸發單元 635、637與放電單元611及613之間的動作原理以及電路 架構和第4B圖相同，故不再贅述。 在本實施例中，放電單元611具有一第一觸發端以及 一第二觸發端，其中第一觸發端具有P型摻雜物，第二觸 發端具有N型摻雜物。放電單元611的第一觸發端接收來 自觸發單元631的觸發信號。放電單元611的第二觸發端 接收來自觸發單元635的觸發信號。 另外，放電單元613亦具有一第一觸發端以及一第二 觸發端，其中第一觸發端亦具有P型摻雜物，第二觸發端 具有N型摻雜物。放電單元613的第一觸發端接收來自觸 發單元633的觸發信號。放電單元613的第二觸發端接收 來自觸發單元637的觸發信號。 第7B圖為本發明之ESD保護裝置之另一可能實施 例。本發明並不限定放電單元與觸發單元的數量。在本實 施例中，ESD保護裝置701具有放電單元DU^DUk、觸發 單元TPi〜TPK及TN广TNK。以放電單元DU!為例，放電單 元DR接收來自觸發單元TP!及TNK的觸發信號。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何所屬技術領域中具有通常知識者，在不 98019/0516-A42246-TW/Final 11 201126689 脫離本發明之精神和範圍内，當可作些許之更動與潤飾， 因此本發明之保護範圍當視後附之申請專利範圍所界定者 為準。 【圖式簡單說明】 第1圖為習知ESD保護裝置。 第2圖為另一習知ESD保護裝置的剖面圖。 第3圖為本發明之ESD保護裝置之示意圖。 第4A圖為本發明之ESD保護裝置之一可能實施例。 第4B圖為本發明之ESD保護裝置之另一可能實施例。 第5圖為本發明之ESD保護裝置之另一示意圖。 第6圖為本發明之ESD保護裝置之另一示意圖。 第7A圖為本發明之ESD保護裝置之另一可能實施例。 第7B圖為本發明之ESD保護裝置之另一可能實施例。 【主要元件符號說明】 110 :偵測電路； 130 :保護電路； C :電容； R、450 :電阻； 431 :二極體模組； DfDn :二極體； 411、413 :矽控整流器；Nothing. , ◎ axis connection f crystal MPJ lightning pressure fb by the number of t-diodes (ie control the collapse of the diode module 431 L things Si. For example, in the normal working mode (when not happening = as When the voltage is lower than the collapsed electric house of the diode module 431, the triggering current 7° 331 does not provide the trigger current to the discharge unit 3U. Since the current path cannot be formed on the contact pad 353, the trigger unit 331, the discharge unit 311 and the contact pad Between 351, therefore, the ESD protection device does not operate. However, in the ESD protection mode (the ESD event occurs), since the esd voltage is much larger than the breakdown voltage of the diode module 431, the trigger unit 331 provides the trigger current to discharge. The unit 311 is configured to trigger the discharge unit 3 ι. Therefore, a current path is formed between the contact pad 353, the trigger unit 331, the discharge unit 311 and the contact pad 351. After the discharge unit 311 is triggered, the trigger unit 333 will provide a trigger. The current is discharged to the discharge unit 313 for triggering the discharge unit 313. When both of the discharge units 313 and 311 are triggered, the ESD current can be discharged from the contact pad 353 'via the discharge cells 313, 311 to the ground. In the present embodiment, the discharge cells 311 and 313 are respectively the Xixi 98019/0516-A42246-TW/Final 6 201126689 controlled rectifiers (SCR) 411 and 413, which are not intended to limit the present invention. In other embodiments, those skilled in the art can use other components having a discharge conducting function as the discharge cells and 313. In addition, since the structure of the controlled rectifier is well known to those skilled in the art, it will not be described again. In the example, the "controlled rectifier 411" has an anode, a cathode and a trigger end. As shown, the anode of the voltage controlled rectifier 411 is lightly connected to the discharge unit 313, the cathode of which is coupled to the contact pad 351, and the trigger end is coupled to the diode. The anode of the body module 431. In this embodiment, the trigger terminal of the step-controlled rectifier 411 has a Ρ-type dopant. Similarly, the 矽-controlled rectifier 413 also has an anode, a cathode and a trigger terminal. The anode is coupled to the contact pad 353, the cathode of which is coupled to the anode of the step-controlled rectifier 411, and the trigger end is coupled to the pole of the transistor Μρ2. In this embodiment, the trigger of the step-controlled rectifier 413 It also has a erbium type dopant. When an ESD event occurs at the contact 塾353 and the contact pad 351 is at ground potential, the ESD voltage can conduct the crystal MP1. When the transistor Μρι has a voltage greater than the diode module 431 When the voltage is collapsed, a trigger current will flow into the trigger terminal of the step-controlled rectifier 411. It is well known in the art that the step-controlled rectifier has an npn transistor and a pnp transistor. At the trigger end of the pilot rectifier 411 (p+ doping) After receiving the trigger current, the npn transistor in the rectifier rectifier 411 is triggered. After the npn transistor is triggered, another trigger current can be supplied to the base of the pnp transistor in the sense rectifier 411, thereby triggering the pnp transistor in the sense rectifier 411. 98019/0516-A42246-TW/Final 7 201126689 After both the npn transistor and the pnp transistor in the pilot rectifier 411 are triggered, a current path is formed in the contact pad 353, the trigger unit 331, the discharge unit 311, and the contact pad. Between 351. By virtue of the characteristics of the current mirror, the firing unit 333 can trigger the discharge element 313 such that the ESO current is discharged from the contact pad 353 'via the discharge elements 313, 311 and the contact pad 351 to the ground. Figure 4B is another possible embodiment of the ESD protection device of the present invention. As shown, the trigger unit 331 includes a transistor mN2. The trigger unit 333 includes a transistor MN1, a diode module 431, and a resistor 450. In the present embodiment, 'electrode crystals' ViN1 and MN2 are: N-type transistors. The gate of the transistor MN1 is lightly connected to its pole, and its source handle is connected to the contact pad 351', and its drain is coupled to the anode of the diode module 431. The resistor 45 is coupled between the gate and the source of the transistor mn1. The gate of the transistor Mn2 is coupled to the gate of the transistor mn1, the drain of which is coupled to the discharge cell 313, and the source thereof is coupled to the contact pad 351. In the present embodiment, the discharge cells 311 and 313 are the pilot rectifiers 415 and 417, respectively. As shown, the controlled rectifier 417 has an anode, a cathode, and a trigger end. The anode of the voltage control rectifier 417 is coupled to the contact pad 353, and the cathode is coupled to the discharge unit 311, and the trigger end is coupled to the cathode of the diode module 431. In the present embodiment, the trigger terminal of the pilot rectifier 417 has an N-type dopant. The voltage controlled rectifier 415 also has an anode, a cathode, and a trigger end. The anode of the rectifier rectifier 415 is coupled to the cathode of the rectifier rectifier 417. The cathode is coupled to the contact pad 351, and the trigger end is coupled to the drain of the transistor Mn2. In this embodiment, the trigger terminal of the pilot rectifier 415 has an N-type dopant. 98019/0516-A42246-TW/Final 〇201126689 In this embodiment, when an ESD event occurs on the contact pad 353, and the contact pad 35 Λ ground potential, the transient electrical waste generated by the gorge event is greater than the two poles. The phantom, group 431 #crash voltage, so can conduct the crystal I, MW. Therefore, the ESD current can be started by the contact pad 353, discharged to the ground via the discharge cells 313, 311 and the ground pad 351. Figure 5 is another schematic view of the ESD protection device of the present invention. The Fig. Fig. is similar, and the Fig. 3 differs in that the 帛5 map has the trigger unit 531 and the discharge unit 511. In a possible embodiment, when the #-current path is formed between the contact pad 353, the trigger unit 331, the discharge unit 311, and the contact pad 351, the trigger unit 333 triggers the discharge unit 313, and the trigger unit 531 triggers the discharge unit 511. Since the internal circuit structure of the trigger unit 531 is the same as that of the trigger unit 333, and the discharge cells 511 and 313 are the same, they will not be described again. Figure 6 is another schematic view of the ESD protection device of the present invention. As shown in the figure, the ESD protection device 600 is coupled between the contact pads 651 and 653. When the ESD material occurs at the contact 塾653 and the contact 651 is at ground potential, the ESD protection device 600 can release the ESD current from the contact pad 653 to the contact 塾651. In the present embodiment, the ESD protection device 6A includes discharge cells 611, 613 and triggering units 631, 633, Magic 5, 637. Discharge cells 611 and 613 are connected in series between contact pads 651 and 653. The trigger unit 631 is coupled between the contact pad 653 and the discharge unit 611. The trigger unit 633 is coupled between the contact pad 653 and the discharge unit 613. The trigger unit 635 is coupled between the contact pad 651 and the discharge unit 611. The trigger unit 637 is coupled between the contact pad 651 and the discharge unit 613. '980019/0516-A42246-TW/Final n 201126689 In this embodiment, one of the triggering units 631 and 633 first triggers the corresponding discharge unit, and then the other triggers the corresponding discharge unit. For example, in a possible embodiment, after the trigger unit 631 first triggers the discharge unit 611, the trigger unit 633 triggers the discharge unit 613. In another possible embodiment, after the trigger unit 633 triggers the discharge unit 613, the trigger unit 631 triggers the discharge unit 611. Similarly, in a possible embodiment, when the trigger unit 635 first triggers the discharge unit 611, the trigger unit 637 triggers the discharge unit 613. In another possible embodiment, after the trigger unit 637 triggers the discharge unit 613, the trigger unit 635 triggers the discharge unit 611. Since the discharge cells 611 and 613 can be triggered by the two trigger units, the trigger voltages of the discharge cells 611 and 613 are smaller than the trigger voltages of the discharge cells 311 and 313 of FIG. Fig. 7A is another possible embodiment of the ESD protection device of the present invention. In the present embodiment, when a first current path is formed between the contact pad 653, the trigger unit 631 and the discharge unit 611, the trigger unit 633 triggers the discharge unit 613. Similarly, when a second current path is formed between the contact pad 651, the trigger unit 637, and the discharge unit 613, the trigger unit 635 triggers the discharge unit 611. In the present embodiment, the trigger units 631 and 633 have a current mirror circuit, and the trigger units 635 and 637 have another current mirror circuit. In addition, the number of diodes of the trigger unit 631 is equal to the number of diodes of the trigger unit 637. In a possible embodiment, the circuit architecture of the trigger unit 631 shown in Fig. 7A is equal to the circuit architecture of the trigger unit 633. In this embodiment, the circuit architecture of the touch unit 633 is equal to the circuit structure of the trigger unit 631. Since the principle of operation and circuit architecture between the trigger units 631 and 633 and the discharge units 611 and 613 are the same as those in Fig. 4A, they will not be described again. Similarly, the circuit architecture of the trigger unit 635 shown in Fig. 7A can be equal to the circuit architecture of the trigger unit 637. In this embodiment, the circuit architecture of the trigger unit 637 is equal to the circuit architecture of the trigger unit 635. Since the principle of operation between the trigger units 635, 637 and the discharge units 611 and 613 and the circuit architecture are the same as those in Fig. 4B, they will not be described again. In this embodiment, the discharge unit 611 has a first trigger end and a second trigger end, wherein the first trigger end has a P-type dopant and the second trigger end has an N-type dopant. The first trigger terminal of the discharge unit 611 receives a trigger signal from the trigger unit 631. The second trigger terminal of the discharge unit 611 receives the trigger signal from the trigger unit 635. In addition, the discharge unit 613 also has a first trigger end and a second trigger end. The first trigger end also has a P-type dopant, and the second trigger end has an N-type dopant. The first trigger terminal of the discharge unit 613 receives the trigger signal from the trigger unit 633. The second trigger terminal of the discharge unit 613 receives the trigger signal from the trigger unit 637. Fig. 7B is another possible embodiment of the ESD protection device of the present invention. The invention does not limit the number of discharge cells and trigger cells. In the present embodiment, the ESD protection device 701 has a discharge unit DU^DUk, trigger units TPi to TPK, and TN wide TNK. Taking the discharge unit DU! as an example, the discharge unit DR receives the trigger signals from the trigger units TP! and TNK. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art, without departing from the spirit and scope of the present invention, In the scope of the invention, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a conventional ESD protection device. Figure 2 is a cross-sectional view of another conventional ESD protection device. Figure 3 is a schematic view of the ESD protection device of the present invention. Figure 4A is a possible embodiment of the ESD protection device of the present invention. Figure 4B is another possible embodiment of the ESD protection device of the present invention. Figure 5 is another schematic view of the ESD protection device of the present invention. Figure 6 is another schematic view of the ESD protection device of the present invention. Figure 7A is another possible embodiment of the ESD protection device of the present invention. Figure 7B is another possible embodiment of the ESD protection device of the present invention. [Main component symbol description] 110: detection circuit; 130: protection circuit; C: capacitance; R, 450: resistance; 431: diode module; DfDn: diode; 411, 413: voltage-controlled rectifier;

Mp广Μρκ、Mni〜Mnk :電晶體， 121、122、351、353、651、653 :接觸墊； 311、313、611、613、DI^-DUk :放電單元； 331、333、631、633、635、637 :觸發單元； 100、200、300、500、600、701 : ESD 保護裝置。 98019/0516-A42246-TW/Final 12Mp Μρκ, Mni~Mnk: transistor, 121, 122, 351, 353, 651, 653: contact pad; 311, 313, 611, 613, DI^-DUk: discharge unit; 331, 333, 631, 633, 635, 637: trigger unit; 100, 200, 300, 500, 600, 701: ESD protection device. 98019/0516-A42246-TW/Final 12

Claims (1)

201126689 七、申請專利範圍： 1. 一種靜電放電保護裝置，包括： 一第一放電單元； 一第二放電單元，與該第一放電單元串聯於一第一接 觸墊與一第二接觸墊之間，用以釋放一靜電放電電流； 一第一觸發單元，包括一第一電晶體以及至少一第一 二極體，該第一電晶體與該第一二極體串聯於該第一接觸 墊與該第一放電單元之間，當一靜電放電事件發生時，該 • 第一觸發單元觸發該第一放電單元；以及 一第二觸發單元，包括一第二電晶體，並耦接於該第 一接觸墊與該第二放電單元之間，當該第一放電單元被觸 發時，該第二電晶體觸發該第二放電單元。 2. 如申請專利範圍第1項所述之靜電放電保護裝置，其 中該第一電晶體係為一第一 P型電晶體，具有一第一閘 極、一第一源極以及一第一沒極，該第一閘極輕接該第一 汲極，該第一源極耦接該第一接觸墊，該第一汲極耦接該 i 第一二極體之陰極。 3. 如申請專利範圍第2項所述之靜電放電保護裝置，其 中該第一放電單元係為一第一矽控整流器（silicon controlled rectifier ; SCR)，具有一第一陽極、一第一陰極 以及一第一觸發端，該第一陽極耦接該第二放電單元，該 第一陰極耦接該第二接觸墊，該第一觸發端耦接該第一二 極體之陽極。 4. 如申請專利範圍第3項所述之靜電放電保護裝置，其 中該第二電晶體係為一第二P型電晶體，具有一第二閘 98019/0516-A42246-TW/Final 13 201126689 極、一第二源極以及一第二汲極，該第二閘極耦接該第一 閘極，該第一源極耦接該第一接觸墊，該第一汲極耦接該 第二放電單元。 5. 如申請專利範圍第4項所述之靜電放電保護裝置，其 中該第二放電單元係為一第二矽控整流器，具有一第二陽 極、一第二陰極以及一第二觸發端，該第二陽極耦接該第 一接觸墊，該第二陰極耦接該第一陽極，該第二觸發端耦 接該第二汲極。 6. 如申請專利範圍第1項所述之靜電放電保護裝置，更 包括一第三放電單元以及一第三觸發單元，該第三放電單 元與該第二及第一放電單元串聯於該第一及第二接觸墊之 間，該第三觸發單元具有一第三電晶體，該第三電晶體耦 接於該第一接觸墊與該第三放電單元之間，當該第一放電 單元被觸發時，該第三電晶體觸發該第三放電單元。 7. 如申請專利範圍第1項所述之靜電放電保護裝置，其 中該第一電晶體係為一第一 N型電晶體，具有一第一閘 極、一第一源極以及一第一及極，該第一閘極輕接該第一 汲極，該第一源極耦接該第一接觸墊，該第一汲極耦接該 第一二極體之陽極。 8. 如申請專利範圍第7項所述之靜電放電保護裝置，其 中該第一觸發單元更包括一電阻，耦接於該第一閘極與該 第一源極之間。 9. 如申請專利範圍第8項所述之靜電放電保護裝置，其 中該第一放電單元係為一第一矽控整流器（silicon controlled rectifier ; SCR)，具有一第一陽極、一第一陰極 98019/0516-A42246-TW/Final 14 201126689 以及一第一觸發端，該第一陽極耦接該第二接觸墊，該第 一陰極耦接該第二放電單元，該第一觸發端耦接該第一二 極體之陰極。 10. 如申請專利範圍第9項所述之靜電放電保護裝置， 其中該第二電晶體係為一第二N型電晶體，具有一第二閘 極、一第二源極以及一第二汲極，該第二閘極耦接該第一 閘極，該第一汲極耦接該第二放電單元，該第一源極耦接 該第一接觸墊。 11. 如申請專利範圍第10項所述之靜電放電保護裝 置，其中該第二放電單元係為一第二矽控整流器，具有一 第二陽極、一第二陰極以及一第二觸發端，該第二陽極耦 接該第一陰極，該第二陰極耦接該第一接觸墊，該第二觸 發端耦接該第二汲極。 12. 如申請專利範圍第1項所述之靜電放電保護裝置， 更包括： 一第三觸發單元，包括一第三電晶體以及至少一第二 二極體，該第三電晶體與該第二二極體串聯於該第二接觸 墊與該第一放電單元之間，當一靜電放電事件發生時，該 第三觸發單元觸發該第一放電單元；以及 一第四觸發單元，包括一第四電晶體，耦接於該第二 接觸墊與該第二放電單元之間，當該第一放電單元被觸發 時，該第四電晶體觸發該第二放電單元。 13. 如申請專利範圍第12項所述之靜電放電保護裝 置，其中該第一電晶體係為一第一 P型電晶體，具有一第 一閘極、一第一源極以及一第一沒極，該第一閘極搞接該 98019/0516-A42246-TW/Final 15 201126689 第一汲極，該第一源極耦接該第一接觸墊，該第一汲極耦 接該第一二極體之陰極。 14. 如申請專利範圍第13項所述之靜電放電保護裝 置，其中該第一放電單元係為一第一矽控整流器（silicon controlled rectifier ; SCR)，具有一第一陽極、一第一陰極、 一第一觸發端以及一第二觸發端，該第一陽極耦接該第二 放電單元，該第一陰極耦接該第二接觸墊，該第一觸發端 耦接該第一二極體之陽極，該第二觸發端耦接該第二二極 體之陰極。 15. 如申請專利範圍第14項所述之靜電放電保護裝 置，其中該第二電晶體係為一第二P型電晶體，具有一第 二閘極、一第二源極以及一第二汲極，該第一閘極耦接該 第一閘極，該第一源極耦接該第一接觸墊，該第一汲極耦 接該第二放電單元。 16. 如申請專利範圍第15項所述之靜電放電保護裝 置，其中該第二放電單元係為一第二矽控整流器，具有一 第二陽極、一第二陰極、一第三觸發端以及一第四觸發端， 該第二陽極耦接該第一接觸墊，該第二陰極耦接該第一陽 極，該第三觸發端耦接該第二汲極。 17. 如申請專利範圍第16項所述之靜電放電保護裝 置，其中該第三電晶體係為一第一 N型電晶體，具有一第 三閘極、一第三源極以及一第三汲極，該第三閘極耦接該 第三汲極，該第三源極耦接該第二接觸墊，該第三汲極耦 接該第二二極體之陽極。 18. 如申請專利範圍第17項所述之靜電放電保護裝 98019/0516-A42246-TW/Final 16 201126689 置，其中該第三觸發單元更包括一 極與該第三源極之間。以電阻，_於該第三間 =申請專利範圍第18項所述之靜電放電 置其中該第四電晶體係為―第^ 四闡;1¾、 地、 、主电日日體，具有一第 第：閘極—ιΓ原極以及—第四難，該第四閘極耗接該 弟-閘極’該第四祕減該第 接該第二接觸墊。 ㈣料該第四源極輕 2〇·—種靜電放電保護裝置，包括： 一第一放電單元； 觸㈣第:放電單元，與該第—放電單元串聯於—第一接 觸墊與一第二接觸墊之間； 單二=單元，接於該第一接觸塾與該第-放電 -，二觸發單元，輕接於該第—接觸墊與該第二放電 :儿之間’當該第一觸發單元觸發該第一放電單元時，兮 第一觸發單元觸發該第二放電單元。 X 署2^申請專利範圍第20項所述之靜電放電保護裝 其中當-電流由該第-接觸塾開始，流經該第一 :元結放電單元以及該第二接料時，該第二觸^ 早7L觸發該第二放電單元。 w 2甘2t申請專利範圍第20項所述之靜電放電保護農 置’其中該第-及第二觸發單元具有1流鏡電路。 23.如申請專利範圍第2〇項所迷之靜電放電 置，更包括： 一第三放電單元，與該第一及第二 98019/0516-A42246-TW/Final 玫電單元串聯於該 17 201126689 第一及第二接觸墊之間 單元之間，2發單①’巧於該第—接觸塾與該第三放電 第：觸發I胃該帛―觸發單㈣發該帛—放電單元時，該 第一觸發单摘發該第三放電單元。 电干了 置 置 1中节申$專利範圍第23項所述之靜電放電保護裝 Li申Γ直第二及第三觸發單元具有—電流鏡電路。 更:括申'專利範圍第2°項所述之靜電放電保護裝 單元2 =單元，接於該第二接觸塾與該第-放電 一一第四觸發單元，_於該第二接觸墊與該第二放電 間’當該第三觸發單元觸發 第四觸發單元觸發該第二放電單元。放電早凡時該 26. 如巾請專·圍第25項 。其:r 一及第二觸發單元具有-二=: 〜第-及第四觸發單元具有—第二電流鏡電路。 27. 如申請專利範圍第25項 其中該第-放電單元具有-二之發 =號該第二觸發端接收來自該第三觸發單元上: 置利範圍第27項所述之靜電放電保護裝 具有-Ν型摻雜物。 “第-觸發％ 98019/0516-A42246-TW/Final 18201126689 VII. Patent application scope: 1. An electrostatic discharge protection device comprising: a first discharge unit; a second discharge unit connected in series with the first discharge unit between a first contact pad and a second contact pad The first trigger unit includes a first transistor and at least one first diode. The first transistor and the first diode are connected in series with the first contact pad. Between the first discharge cells, when an electrostatic discharge event occurs, the first trigger unit triggers the first discharge unit; and a second trigger unit includes a second transistor coupled to the first The second transistor triggers the second discharge unit when the first discharge unit is triggered between the contact pad and the second discharge unit. 2. The electrostatic discharge protection device of claim 1, wherein the first electro-crystalline system is a first P-type transistor having a first gate, a first source, and a first The first gate is coupled to the first drain, the first source is coupled to the first contact pad, and the first drain is coupled to the cathode of the first first diode. 3. The electrostatic discharge protection device of claim 2, wherein the first discharge unit is a first controlled rectifier (SCR) having a first anode, a first cathode, and The first triggering end is coupled to the second discharge unit, the first cathode is coupled to the second contact pad, and the first triggering end is coupled to the anode of the first diode. 4. The electrostatic discharge protection device of claim 3, wherein the second electro-crystalline system is a second P-type transistor having a second gate 98019/0516-A42246-TW/Final 13 201126689 pole a second source and a second drain, the second gate is coupled to the first gate, the first source is coupled to the first contact pad, and the first drain is coupled to the second drain unit. 5. The electrostatic discharge protection device of claim 4, wherein the second discharge unit is a second controlled rectifier having a second anode, a second cathode, and a second trigger end. The second anode is coupled to the first contact pad, the second cathode is coupled to the first anode, and the second trigger end is coupled to the second drain. 6. The electrostatic discharge protection device of claim 1, further comprising a third discharge unit and a third trigger unit, wherein the third discharge unit and the second and first discharge units are connected in series to the first The third trigger unit has a third transistor coupled between the first contact pad and the third discharge unit when the first discharge unit is triggered. The third transistor triggers the third discharge unit. 7. The electrostatic discharge protection device of claim 1, wherein the first electro-crystalline system is a first N-type transistor having a first gate, a first source, and a first The first gate is coupled to the first drain, the first source is coupled to the first contact pad, and the first drain is coupled to the anode of the first diode. 8. The electrostatic discharge protection device of claim 7, wherein the first trigger unit further comprises a resistor coupled between the first gate and the first source. 9. The electrostatic discharge protection device of claim 8, wherein the first discharge unit is a first controlled rectifier (SCR) having a first anode and a first cathode 98019. /0516-A42246-TW/Final 14 201126689 and a first trigger end, the first anode is coupled to the second contact pad, the first cathode is coupled to the second discharge unit, and the first trigger end is coupled to the first The cathode of a diode. 10. The electrostatic discharge protection device of claim 9, wherein the second electro-crystalline system is a second N-type transistor having a second gate, a second source, and a second electrode. The first gate is coupled to the first gate, the first drain is coupled to the second discharge unit, and the first source is coupled to the first contact pad. 11. The electrostatic discharge protection device of claim 10, wherein the second discharge unit is a second controlled rectifier having a second anode, a second cathode, and a second trigger end. The second anode is coupled to the first cathode, the second cathode is coupled to the first contact pad, and the second trigger end is coupled to the second drain. 12. The electrostatic discharge protection device of claim 1, further comprising: a third trigger unit comprising a third transistor and at least one second diode, the third transistor and the second a diode is connected in series between the second contact pad and the first discharge unit. When an electrostatic discharge event occurs, the third trigger unit triggers the first discharge unit; and a fourth trigger unit includes a fourth The transistor is coupled between the second contact pad and the second discharge unit, and when the first discharge unit is triggered, the fourth transistor triggers the second discharge unit. 13. The electrostatic discharge protection device of claim 12, wherein the first electro-crystalline system is a first P-type transistor having a first gate, a first source, and a first The first gate is coupled to the first pole, the first source is coupled to the first contact pad, and the first drain is coupled to the first second The cathode of the polar body. 14. The electrostatic discharge protection device of claim 13, wherein the first discharge unit is a first controlled rectifier (SCR) having a first anode, a first cathode, a first triggering end and a second triggering end, the first anode is coupled to the second discharging unit, the first cathode is coupled to the second contact pad, and the first triggering end is coupled to the first diode The second trigger end is coupled to the cathode of the second diode. 15. The electrostatic discharge protection device of claim 14, wherein the second electro-crystalline system is a second P-type transistor having a second gate, a second source, and a second electrode. The first gate is coupled to the first gate, the first source is coupled to the first contact pad, and the first drain is coupled to the second discharge unit. 16. The electrostatic discharge protection device of claim 15, wherein the second discharge unit is a second controlled rectifier having a second anode, a second cathode, a third trigger end, and a The fourth triggering end is coupled to the first contact pad, the second cathode is coupled to the first anode, and the third triggering end is coupled to the second drain. 17. The electrostatic discharge protection device of claim 16, wherein the third electro-crystalline system is a first N-type transistor having a third gate, a third source, and a third The third gate is coupled to the third drain, the third source is coupled to the second contact pad, and the third drain is coupled to the anode of the second diode. 18. The electrostatic discharge protection device of claim 17, wherein the third trigger unit further comprises a pole and the third source. Taking the electric resistance, _ in the third room = the electrostatic discharge described in claim 18, wherein the fourth electro-crystalline system is "the fourth embodiment"; 13⁄4, ground, and main electric day, with a first The first: the gate - the original pole of the ι 以及 and the fourth is difficult, the fourth gate consumes the brother - the gate - the fourth secret minus the second contact pad. (4) The fourth source is lightly 〇--type electrostatic discharge protection device, comprising: a first discharge unit; a touch (four): a discharge unit, and the first discharge unit is connected in series to the first contact pad and a second Between the contact pads; a single two = unit, connected to the first contact 塾 and the first discharge-, two-trigger unit, lightly connected between the first contact pad and the second discharge: when the first When the trigger unit triggers the first discharge unit, the first trigger unit triggers the second discharge unit. The electrostatic discharge protection device of claim 20, wherein when the current is started by the first contact, and the second contact is discharged through the first: the junction discharge unit and the second contact ^ The second discharge unit is triggered by 7L early. The electrostatic discharge protection device described in claim 20, wherein the first and second trigger units have a flow mirror circuit. 23. The electrostatic discharge device of claim 2, further comprising: a third discharge unit, in series with the first and second 98019/0516-A42246-TW/Final rose unit, the 17 201126689 Between the units between the first and second contact pads, the two bills 1' coincide with the first contact 塾 and the third discharge: trigger the I stomach, the 帛-trigger (four), the 帛-discharge unit, The first trigger unit picks up the third discharge unit. The electrostatic discharge protection device described in the second section of the patent application is the second and third trigger unit having a current mirror circuit. Further, the electrostatic discharge protection unit 2 = unit described in the 2nd paragraph of the patent scope is connected to the second contact port and the first discharge-fourth trigger unit, and the second contact pad is The second discharge chamber 'when the third trigger unit triggers the fourth trigger unit to trigger the second discharge unit. When the discharge is early, the time is 26. If you want to cover the case, please enclose the 25th item. It: r and the second trigger unit have - two =: ~ the first and fourth trigger units have - a second current mirror circuit. 27. According to claim 25, wherein the first discharge unit has a -2 signal = the second trigger terminal receives from the third trigger unit: the electrostatic discharge protection device described in item 27 of the profit range has - Ν type dopant. "Number-trigger % 98019/0516-A42246-TW/Final 18
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US11387649B2 (en) 2019-09-11 2022-07-12 Vanguard International Semiconductor Corporation Operating circuit having ESD protection function

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