201124689 六、發明說明 【發明所屬之技術領域】 协、占t $係關於對形成於被處理基板上的塗佈液細(塗佈膜） 於減反狀態下施行乾燥處理之減壓乾燥裝置及減壓乾燥方法。 【先前技術】 ㈣ϊΐΐ如FPD(平面顯示器)時，係藉由於玻璃基板等被處理基 膜成膜後’塗佈係處理液之光抗钱劑(以下稱光阻)以形 應電路圖案使光阻膜曝光’對此進行顯影處理，所 δ月光试影步驟形成電路圖案。 被产5=3，之光微影步驟中’為於對塗佈在玻璃基板等 可:用^#=阻液塗佈膜進行預烤之前’先適度使其乾燥， 可使用減壓乾燥裝置。 含.S知之代表性的減壓乾燥裝置(5〇)例如專利文獻】所記載，包 面 底容器型下部腔室⑼，上表面形成開口；及 孤狀上指室(52) ’可氣密性地密接或後合此下部腔室上表 乾燥處理細(使上雜室雜下雜辦進行減壓 部===乾燥’可藉由外部之真空泵，通過設於下 氣，腔室内壓力ίΓΠΙ仃腔ΐ内之真空排氣。藉由此真空排 壓狀態下溶劑(稀釋_和=壓f縣減驗態，在此減 表面形成變質佈膜蒸發，於光阻塗佈膜 ―，在自減魏燥開始經過—定時間之 二賴之時點結束減細處理。為此由設 或是二埠噴4或概槪辆性峨例如氮氣 201124689 【先則技術文獻】 【專利文獻】 【專利文獻1】日本特開2000_181079 【發明内容】 (發明所欲解決之課題） 單元二等之_基板大型化’於減壓乾燥處理 早兀i中收、，·内破璃基板之腔室亦大型化。 間。佑’為進行至既定壓為止之減壓需要時 行乾焊處理以在更__針對基板處理面進 仃乾烁處理（日本特願2009_172834)。 厚等條ίί Ϊ間fi燥不均之產生狀況會依光阻液種類、膜 同，故於1座腔室實行複數種處理條件時，在所 有基板上未必可在短時間内形成良好的薄膜。 才社坏 燥處彡纽好的薄膜(乾 不流構件對應所有處理條件而言仍 間i;=膜 然而’若基板遠離腔室底面，設敕、ώ 充分發揮功能，於基板背側產生間隙而：法在基= 氣流，無法於短時間進行乾燥處理。因、 ;充刀之 流構件之_之氣流，有絲叫胁發 =光阻與整 201124689 殘與圖案剖面形狀及線寬之間有相關關係， 案肩部愈為擴張，線寬愈窄，殘膜率愈低光阻 ^現2皁if 錐狀擴大。通常為使元件微細化吾 配ίΐί前者圖案特性，但在多層配線構造中使 / 有時亦會希望出現殘膜率低之後者的_特性。因 低之麵魏賴料高之雜乾驗理或是殘膜率 ί 無論選擇何者皆需要求裝置性 臈質特性。麵處理韻光崎細在面㈣—地具有所期待之 、咸愿、’本發明之目的在於提供-種減壓乾燥裝置及 佈有處理液之被處理基板進行該處理液之乾 複數被，其特_於可分別針對處理條件不同之 处土板縮紐處理液之乾燥時間，且形成良好的薄膜。 法，ΐΐϊΓίΛίί於提供—種減壓乾燥裝置及減壓乾燥方 炉也Γί 了速針對被處理基板上的塗佈膜進行減壓乾 半^，^緩慢針對被處^1基板上的塗佈膜進行減壓乾燥 所期待^質ίί論以任—步驟皆可在基板上於面内均一地獲得 (解決課題之手段） ^解，上述課題’依本發明之減壓乾燥裝置對塗佈有處理液 徵進行該處理液之減壓乾燥處理，形成塗佈膜，其特 腔室，收納被處理基板，形成處理空間； ，持部，設於該腔㈣，固持該被處理基板; 第1昇降機構，使該固持部昇降移動； 氣流控制部，設於該固持部下方； 第2昇降機構，使該氣流控制部昇降移動； 排氣口，形成於該腔室内；及 ’ 排氣機構，使腔室内蒙氣自該排氣口排氣。 201124689 • 依如此之構成，在減壓乾燥處理期間内， .固持部高度及氣流控制部之高度’可“;i= =，=對二板二r 日守間，且可形成良好薄膜。 縮短光阻液乾加 美之減壓乾燥裝置用以在減壓狀態下使形成於被處理 土板上的圣佈液膜乾燥，其特徵在於包含： 、 月二至，以可進出之方式收納基板並可減壓； 固持部，在該腔室内載置基板； f活性氣體供給部，包含沿水平之帛1方向設科腔宮内今 第鳴’經由該第1供 間之除於該腔室内該第1供氣蟑與該固持部之 “ί氣ί第 排氣埠’經由該排氣埠使該腔室内 氣流控制部，可在以下二個模式間進行切換：第 ，活性氣體氣流之路線，俾由該第i供氣蟑噴出之非活^ ^半通過該固持部上而到達該排氣埠；與第2、模，實上解 除針對非活性氣體的該氣流路線之限制。 、實質上解 理液壓ίί，該減壓w置對塗佈有處 其特處理液之減錄燥處理，形成塗佈膜’ 將被處理基板固持於該固持部； 藉由該第1昇降機構使顧持部上昇，由朗持部 破處理基板接近該腔室頂棚部； 、Μ 藉由該排氣機構使該腔室内之處理空間減壓；及 異欽„定時·，勤該第2昇降機構使該氣流控制部上 汁移動，々该氣流控制部接近由該固持部所固持之被處理基板。 201124689 、且依本發明之減壓乾無方法藉由該減壓乾燥裝置對塗佈有處 理液之被處理基板進行該處理液之減壓乾燥處理，形成塗佈膜， 其特徵在於實行下列步驟： 、 將被處理基板固持於該固持部； ^該第1昇降機構使細持部下降移動，該被處理 近遠氧流控制部； 藉由該排氣機構使該腔室内之處理空間減壓；及 固轉ΐίΐίίΓ間後，藉由該第1昇降機構及第2昇降機構使 的之該固持部與該氣流控制部在維持彼此之距離 勺狀心下上汁移動，停止於腔室内之既定位置。 ，ΐϊΐ發Γ之減壓乾燥方法藉由該賴乾燥裝置對塗佈有處 其處魏之減魏祕理，賴塗佈膜， 將被處理基板固持於該固持部； 被處了 =持虹4, __觸持之該 藉由該排氣機構使該腔室内之處理空間減壓；及 昇=經’藉由該第2昇降機構使該氣流控制部上 其特徵在於實行下列㈣： 敲从處理’軸塗佈膜’ 將被處理基板固持於該固持部； 藉由該排氣機構使該腔室内之處理空 ㈣，該被處理基板接 似且齡祕輯構將非活性氣體供給至該腔室 201124689 於經過蚊時·，藉由該第丨昇降機構及第2昇降機構使 基板之該固持部與該氣流控制部在維持彼此之距離 的狀悲下上昇移動，停止於腔室内之既定位置。 且依^發明之減壓賴方法藉由該賴乾縣置對塗佈有處 „被處，板進行該處理液之減壓乾_理，形成塗， 其特徵在於實行下列步驟： ' 將被處理基板固持於該固持部； 近該1流“制部 j ~ f由s亥排氣機構使該腔室内之處理空間減壓； 藉由該供氣機構將非活性氣體供給至該腔室 於經過既定時間後，藉由該第1昇降 部與該氣流控制=== 職，下士幵移動’停止於腔室内之既定位置。 - 等處2:二此=應:液種類或膜厚 短光阻液乾燥時間，且可“二薄膜。⑼丁、當之乾燥處理，縮 且本發明之減壓乾燥方法用以一 態下使形成於被處理基板上的泠你/ &燥裝置在減壓狀 含：土販上的塗佈液膜乾無’該減塵乾燥農置包 以可進出之方式收納基板並可減壓； 固持# ’在該腔室内载置基板； 非活性氣體供給部，包含 固持部單側之第！供氣埠，級二mi向設於該腔室内該 至該腔室内；及 以第供軋皐將非活性氣體供給 間之第1區域外第1供氣埠與該固持部之 進行真空排氣；弟&域之排鱗’經由該排氣埠對該腔室内 該減塵乾燥方法之特徵為： 201124689 可在以下二個模式間進行切換：第1 氣流之路線，俾由該第i供氣淳喷出制，活性氣體 固持部上而到達該排氣埠；與第2模^ = j之夕半通過該 氣體的該氣流路線之限制。 只貝上解除針對非活性 依本發明，氣流控制部選擇第 由第1供氣埠對腔室内供給之非活性氣壓乾燥處理中 上朝-方向流動，自基板上的塗佈膜揮之夕」#分佳)在基板 氣體之氣流運輸，故可促進顧乾燥進迅^非活性 減麼乾燥處理開始後馬上進行抽直可磁率地在 行吹掃’亦可在趣爾理中;燥$結束時進 對腔室内供給非活性氣體。藉此，之氣f而 時間之減壓乾燥+驟-Γ + L、疋良好地見施緩慢•長 之膜質特性緩慢ί壓乾燥之=均—地獲得針對基板上的塗佈膜 (發明之效果） 有處襄置及減塵乾燥方法，對塗佈 膜，苴特科V進仃°亥處理液之乾燥處理，以形成塗佈 處理液之祕:a^ ====之紐被纽基板縮矩 膜進行減壓乾:處地速針對贼理基板上的塗佈 進行減壓乾燥處理之步f ^緩反針對被處理基板上的塗佈膜 板上於面内均—地獲得所期減壓乾燥步驟皆可在基 【實施方式】 201124689 以下就依本發明之第丨實施形態 《 ^發明之_乾縣置可適祕在 步7 =彳T說明。 處理基板之塗條制之減壓乾燥單驟中軸級膜於被 如圖1、圖2所示，塗佈裝置1〇〇中 ，驟順序橫向呈—列配置有包含噴 依處 由沿此導轨m平行移動群„；f導執以，藉 112朝減壓乾燥單元114運送基板G。 了自細塗佈單元 佈單S112如上述包含噴嘴122，此噴嘴122由固定 llGjl_n 12〇崎餘態岐之。由光阻液供 此喷嘴122供給係處理液之光阻液R，可自因ί送 在閘m2G下通過移動之基板G—端橫跨另—端塗佈光阻 且減壓乾燥單元114包含： ，底容器型下部腔室124，上表面形成開口；及 蓋狀上部腔室126，可氣密地密接此下部腔室124上表面。 如圖1、圖3所示下部腔室124大致呈四角形，於中心部配置 5用以水平載置基板〇並加以吸附固持之板狀平台130(固持部）。 該上部腔室126藉由上部腔室移動機構128以可任意昇降之方式 配置於3亥平台130上方，減壓乾燥處理時上部腔室126下降密接 下部腔室124而關閉，呈將載置在平台13〇上的基板（}收納&處 理空間之狀態。 又，如圖4、5所示，該平台13〇藉由例如以馬達為驅動源， 由滾珠螺桿機構所構成之昇降裝置194(第1昇降機構)可昇降移 動。 且如圖3、圖4所示，於基板G側方設有排氣口 134。更具體 而吕，排乳口 134设於下部腔室124底面一邊附近之二處。各排 氣口 134分別連接排氣管152,各排氣管14通往真空泵15(排氣機 構）。又，在該上部腔室126包覆下部腔室124之狀態下，可藉由 該真空泵148使腔室内處理空間減壓至既定真空度。 11 201124689 且於腔室内，在夾隔著基板G與該排氣口 134相 板側方設有供氣口 132。此供氣口 i 5 致呈四角形之下部腔室9底面，盘® 4所不’设於大 向夕另一、息似卞丄，面與5又有该排氣口 134之一邊相對 =之另邊附近。由此供氣口 132對腔 、^ 巧以吹掃腔室内蒙氣。如圖4所示，連 吕142連接非活性氣體供給部136(供氣機構” ，、 如室内氣壓達既定值(例 士你)次脸内減壓開始再經過既定時間後開始。 流量減少之腔室内氣流，以幫助減壓乾燥處理 评：ϊΐ?2ϊ燥處理期間内維持經常保持穩定之氣流，開 始供，、。非活性氣體亦可在腔室内減壓開始前，或是同時進行。 方檢供氣口132側基板G之緣部下方作為氣流控制部配置有 方免構件160。且在供氣口 132與排氣口 134之間，基板G左右 兩側之，部下方，作為氣流控制部分別配置有方塊構件⑹。 在开16(3'161如圖4、圖5所示’其大部分可收納 在开/成於下。卩腔室124底面之收納溝槽124a。 播碑iib等方塊構件160、161可藉由例如以馬達為驅動源，由滾 珠累#機構所構成之昇降裝置164(第2昇降機構)昇降移動。 亦即，方塊構件160、161藉由昇降裝置164昇降移動，配置 於腔室内帥，藉此可用作為氣流控制部。 b又，如此作為氣流控制部之方塊構件副、161可分別設置， 或是亦可一體(门字型)設置。 且於該方塊構件16〇、161左右兩側，分別設有用以在基板(3 工右側方形成障壁，抑制非活性氣體流往基板側方之側桿構件 162。 Λ ^側桿構件162例如圖示呈板狀形成，設置其上端面接觸上 j腔至126，可遮蔽基板g左右側方空間。或是亦可設置侧桿構 件162其上端面不接觸上部腔室126而可遮蔽基板〇左右側方空 間0 12 201124689 .且側桿構件162不限定於板狀，亦可設置為填滿基板G左右 側方空間之形狀。 且為易於在基板G上形成氣流，可形成此侧桿構件162氣流 方向之長度至少長於基板G左右侧邊，但如圖3、圖4所示，亦 可設置其端部162a(特別是排氣口 134側)不接觸腔室内壁12牝。 即使在此時，亦呈遮蔽基板G左右側方空間一部分之狀能，可充 分抑制非活性氣體流往基板側方。 〜 且不限於圖示之例，亦可形成各側桿構件162呈其兩端部接 =相對向之腔室_之長度，完全遮蔽(填滿)基板G左右側方空 間0 接著根據@ 6、圖7朗關於如此構成之塗佈裝置⑽之動作。 首先，送入基板G，-旦將其載置在運送臂n :士導SI上移動，在光阻塗佈單元112閉門120下通過移 液Γ=η20之喷嘴122對在其下移動之基板G g先阻液R，自基板G —邊朝另—邊塗佈光阻液r(圖6之步驟 又，於辦基板G全面塗佈光崎 元114上部腔室126下 接者，載置基板G於_乾燥單元114之平台13〇 移在動=128下降移動之上部腔請包覆 形成之處部腔室124關閉上部腔請 一旦藉由該上部腔室126關閉下部腔室124 平台do即藉由驅動昇降裝置194 士 W 7⑻所不， 置’基板G以接近腔室頂棚部 ^ 之上方位 方塊構件、⑹呈__^ 步驟邛。此時， 真空泵148自此狀態起作動 抽吸處理空間内之空氣，處理%134經由排氣管152 6之步驟S4)。孔處理二間之氣壓減塵至既定真空狀態(圖 201124689 片在此，基板G上表面接近腔室頂棚部，於基板G上表面呈蒙 氣大致不流動之狀態。藉此’喊壓對細於基板G之光 r 施以自然乾燥(預備乾燥），而抑制轉印痕跡、橘皮形狀、劇 產生。 腔至内氣壓-旦達既定值(例如4〇〇Pa以下），或 6之步驟S5)，平台13〇及方塊構件膽 因應所祐上升或下降移動，停止於腔室内之既定位置。 7® 匕全於Ϊί内基板G之南度位置雖係根據光阻液種類或膜 ^乾__處理條件決定，但至少方塊構件刷、ΐ6ι G緣部下方呈接近基板G之狀態(圖6之步驟s6)。 、土 僅太HI®所示之例中’在此步驟S6，平台130之位置不變化， .定流室内供給既 開始對腔室内供給此非活性氣以= 圖二，S7)。又， 平台Β0及方塊構件160、=限=上曰述步獅中 或是，亦可在平台讓及方塊構件160、161昇降中動^ 供給非活性氣體。 101幵降私動之途中開始 在此’於基板G側方設有側桿構件％201124689 VI. Description of the Invention [Technical Fields of the Invention] Co., Ltd. is a decompression drying device for drying a coating liquid (coating film) formed on a substrate to be processed in an anti-reverse state. Pressure drying method. [Prior Art] (4) For example, in the case of FPD (Planar Display), the light-reducing agent (hereinafter referred to as photoresist) of the coating system treatment liquid is formed by a film pattern such as a glass substrate to form a film. The resist film exposure 'develops this, and the δ moonlight test step forms a circuit pattern. In the photolithography step of producing 5=3, in order to apply to a glass substrate or the like: before pre-baking with a ^#=resistance coating film, 'dry it properly, and then use a vacuum drying device. . A vacuum drying apparatus (5〇) including a representative example of the present invention is described, for example, in the patent document, the lower chamber (9) of the bottom container type has an opening formed on the upper surface; and the upper finger chamber (52) is airtight. Strictly close or close the surface of the lower chamber to dry the fine treatment (so that the upper chamber is mixed with the decompression unit ===drying) can be set by the external vacuum pump, by the chamber, the pressure inside the chamber Vacuum evacuation in the cavity of the cavity. By means of the solvent under vacuum discharge (diluted_ and = pressure f county reduced state, the surface is reduced to form a metamorphic film evaporation, in the photoresist coating film - in Decrease Wei Wei began to pass the time limit of the second time - the end of the reduction process. For this purpose, set or two spray 4 or an overview of the vehicle, such as nitrogen 201124689 [prior technical literature] [patent literature] [patent literature] 1] Japanese Laid-Open Patent Publication No. 2000_181079 [Explanation] The problem of the invention is to increase the size of the unit. Between. You're doing dry welding for the decompression to the predetermined pressure The treatment is performed on the surface of the substrate for further processing (Japanese Patent No. 2009_172834). The thickness of the ίί Ϊ fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi fi When a plurality of processing conditions are applied to the chamber, a good film may not be formed on all the substrates in a short time. The film of the dry-breaking material is still good (the dry-flow member is still in accordance with all the processing conditions; i; However, if the substrate is away from the bottom surface of the chamber, the 敕 and ώ are fully functioned, and a gap is formed on the back side of the substrate: the method is based on the air flow, and the drying process cannot be performed in a short time. Airflow, there is silk called threatening = photoresist and the whole 201124689 residual and pattern cross-sectional shape and line width have a correlation, the shoulder of the case is more expansion, the narrower the line width, the lower the residual film rate, the light resistance, 2 soap If the taper is enlarged, it is usually used to make the components finer. The pattern characteristics of the former are used, but in the multilayer wiring structure, the _ characteristics of the low residual film rate are sometimes expected to be high. Miscellaneous dry test or residual film rate ί no matter which one is chosen It is required to require the device-like enamel characteristics. The surface treatment is fine-grained on the surface (4) - the ground has the desired, ambiguous, 'the purpose of the present invention is to provide a vacuum drying device and a substrate to be treated with the treatment liquid. The dry multiplicity of the treatment liquid is specially designed to form a good film for the drying time of the soil plate shrinkage treatment liquid which is different for the treatment conditions, respectively, and the invention provides a decompression drying device and a decompression device. In the drying furnace, the coating film on the substrate to be processed is dried under reduced pressure, and the coating film on the substrate is slowly dried under reduced pressure. It can be uniformly obtained in-plane on the substrate (the means to solve the problem). The above-mentioned problem is based on the vacuum drying apparatus of the present invention, and the treatment liquid is applied to the vacuum drying treatment of the treatment liquid to form a coating. a cloth film, the special chamber, accommodating the substrate to be processed to form a processing space; the holding portion is disposed in the cavity (4) to hold the substrate to be processed; the first lifting mechanism moves the holding portion up and down; the airflow control portion is provided In this The second elevating mechanism moves the airflow control unit up and down; the exhaust port is formed in the chamber; and the exhaust mechanism exhausts the chamber from the exhaust port. 201124689 • According to this configuration, during the decompression drying process, the height of the holding portion and the height of the airflow control unit are 'may'; i = =, = two pairs of plates, and a good film can be formed. The photoresist drying and drying vacuum drying device is used for drying the liquid film of the holy cloth formed on the treated soil plate under reduced pressure, and is characterized in that: the second month, the substrate is accommodated in an accessible manner. a decompressing portion; a holding portion, wherein the substrate is placed in the chamber; and the f-active gas supply portion includes a chamber in the direction of the horizontal direction of the first chamber, and the first chamber is separated by the first chamber. (1) The gas supply and the "exhaust gas" of the holding portion allow the airflow control unit in the chamber to switch between the following two modes: first, the route of the active gas flow, The non-activated gas ejected from the ith air supply port passes through the holding portion to reach the exhaust port; and the second and second modes are used to release the restriction on the air flow path for the inert gas. Dissolving the hydraulic pressure ίί, the decompression w is applied to the surface of the coating liquid to be coated with the special treatment liquid to form a coating film to hold the substrate to be treated on the holding portion; by the first lifting mechanism The holding portion is raised, and the substrate is approached by the ramming portion to approach the ceiling portion of the chamber; Μ the processing space in the chamber is decompressed by the venting mechanism; and the second hoisting mechanism The airflow control unit moves the juice, and the airflow control unit approaches the substrate to be processed held by the holding portion. The method of applying the vacuum drying device according to the present invention is applied to the substrate to be processed by the vacuum drying device according to the present invention. The substrate to be processed is subjected to a vacuum drying treatment of the treatment liquid to form a coating film, which is characterized in that: the substrate to be processed is held by the holding portion; ^ the first lifting mechanism lowers the holding portion The treated near-instantaneous oxygen flow control unit; the exhausting mechanism decompresses the processing space in the chamber; and the solid lifting mechanism and the second lifting mechanism are used by the first lifting mechanism and the second lifting mechanism Holding portion and the air flow The system moves on the juice under the heart of the spoon and stops at the predetermined position in the chamber. The method of drying the decompression method of the hair dryer is coated with the Wei-Drying device. The coating film is used to hold the substrate to be treated on the holding portion; the position of the holding chamber is controlled by the venting mechanism to decompress the processing space in the chamber; By the second elevating mechanism, the airflow control unit is characterized in that the following (4) is performed: Knocking from the processing 'axis coating film' to hold the substrate to be processed on the holding portion; the chamber is made by the exhaust mechanism The indoor processing space (4), the processed substrate is connected and the inert gas is supplied to the chamber 201124689. When the mosquito passes, the substrate is held by the third lifting mechanism and the second lifting mechanism. And the airflow control unit moves up and down while maintaining the distance between each other, and stops at a predetermined position in the chamber. The method of decompression according to the invention is applied by the Laigan County. , the plate performs the decompression of the treatment liquid to form a coating, The utility model is characterized in that the following steps are carried out: 'maintaining the substrate to be processed on the holding portion; near the one-stream "the portion j ~ f is used to decompress the processing space in the chamber by the shai exhaust mechanism; by the gas supply mechanism After the inert gas is supplied to the chamber for a predetermined period of time, the first lifting portion and the air flow control ===, and the sergeant moves 'stops at a predetermined position in the chamber. - Waiting for 2: two = should: liquid type or film thickness short photoresist liquid drying time, and can be "two films. (9) Ding, when it is dried, and the vacuum drying method of the present invention is used to form a coating liquid on a substrate which is formed on a substrate to be treated in a reduced pressure state. The film is dry. The dust-reducing and drying agricultural package packs the substrate in a removable manner and can be decompressed. The holding device holds the substrate in the chamber. The inert gas supply unit includes the one side of the holding portion! a gas supply 埠, a level two mi is disposed in the chamber to the chamber; and the first supply air and the holding portion are vacuum-exhausted by the first supply region between the supply of the inert gas The younger & field scales' feature of the dust reduction drying method in the chamber via the exhaust vent: 201124689 can be switched between the following two modes: the first airflow route, and the first air supply The gas venting system is formed on the active gas holding portion to reach the exhaust gas enthalpy; and the second mode is corrected by the air flow path of the gas. According to the present invention, the airflow control unit selects the upper airflow direction in the inert gas pressure drying process supplied to the chamber by the first air supply port, and the coating film on the substrate is swayed. It is good to transport in the gas flow of the substrate gas, so it can promote the drying of the air. The non-activity is reduced. The drying process can be carried out immediately after the start of the drying process. It can also be used in the fun; The inert gas is supplied into the chamber. Thereby, the gas f and the time of the vacuum drying + Γ - Γ + L, 疋 good to see slow application · long film quality is slow 压 pressure drying = uniform - to obtain a coating film on the substrate (invention Effect) There is a place to install and dust reduction and drying method, the coating film, the drying process of the 苴特科 V进仃°hai treatment liquid to form the secret of the coating treatment liquid: a^ ==== The substrate shrinkage film is subjected to decompression drying: the step of dehumidifying and drying the coating on the substrate of the thief on the surface of the thief is carried out, and the coating film on the substrate to be processed is uniformly obtained in-plane. The vacuum drying step can be carried out in accordance with the second embodiment of the present invention according to the embodiment of the present invention. The invention is described in the following paragraphs. The reduced-pressure drying single-spindle-stage film of the coated substrate is processed as shown in FIG. 1 and FIG. 2, and the coating device is arranged in the horizontal direction in the order of the flow direction. The rail m parallel movement group „;f is guided by the 112 to transport the substrate G toward the vacuum drying unit 114. The self-fine coating unit layout S112 includes the nozzle 122 as described above, and the nozzle 122 is fixed by the llGjl_n 12 The photoresist liquid R is supplied from the photoresist 122 to the nozzle 122, and the photoresist can be supplied from the gate G2G through the moving substrate G-end across the other end and dried under reduced pressure. The unit 114 includes: a bottom container type lower chamber 124 having an upper surface forming an opening; and a lid-shaped upper chamber 126 for airtightly adhering to the upper surface of the lower chamber 124. The lower chamber is as shown in Figs. 124 is substantially quadrangular, and is disposed at a central portion 5 for horizontally placing the substrate 〇 and holding and holding the plate-like platform 130 (holding portion). The upper chamber 126 is arbitrarily movable by the upper chamber moving mechanism 128. It is disposed above the 3H platform 130, and the upper chamber 126 is lowered when the drying process is performed under reduced pressure. The lower chamber 124 is closed and is in a state of being placed on the stage 13 收纳 in the substrate and the processing space. Further, as shown in FIGS. 4 and 5, the stage 13 is driven by, for example, a motor. The source, the lifting device 194 (the first lifting mechanism) constituted by the ball screw mechanism can be moved up and down. As shown in FIGS. 3 and 4, the exhaust port 134 is provided on the side of the substrate G. More specifically, the row is arranged. The nipples 134 are disposed at two places near the bottom surface of the lower chamber 124. The exhaust ports 134 are respectively connected to the exhaust pipe 152, and each of the exhaust pipes 14 leads to the vacuum pump 15 (exhaust mechanism). Further, in the upper chamber In a state where the lower chamber 124 is covered by the vacuum chamber 148, the processing space in the chamber can be depressurized to a predetermined degree of vacuum. 11 201124689 and in the chamber, the substrate G is interposed between the substrate and the exhaust port 134. The side is provided with a gas supply port 132. The air supply port i 5 is formed on the bottom surface of the lower chamber 9 of the quadrangular shape, and the disk plate 4 is not disposed on the other side of the day, and the surface is similar to the surface. One side of the exhaust port 134 is opposite to the other side of the other side. Thus, the air supply port 132 is ventilated to the cavity and the chamber. As shown in Fig. 4, the Lianlu 142 is connected to the inert gas supply unit 136 (air supply mechanism), and if the indoor air pressure reaches a predetermined value (such as a patient), the decompression in the secondary face starts and then passes after a predetermined period of time. Airflow to help decompression drying treatment evaluation: ϊΐ? 2 During the drying process, maintain a steady flow of gas, start to supply, and the inert gas can also be started before or after the decompression in the chamber. The eliminator member 160 is disposed below the edge portion of the substrate G on the gas port 132 side as the airflow control portion. Between the air supply port 132 and the exhaust port 134, the left and right sides of the substrate G are below the portion, and the airflow control portion is respectively It is equipped with a block member (6). In the opening 16 (3'161 as shown in Fig. 4 and Fig. 5, most of them can be accommodated in the opening/lowering. The receiving groove 124a of the bottom surface of the chamber 124. The block members 160, 161 such as the tablet IIb can be borrowed. For example, the lifting device 164 (second lifting mechanism) constituted by the ball-reducing mechanism is moved up and down by, for example, a motor as a driving source. That is, the block members 160 and 161 are moved up and down by the lifting device 164, and are disposed in the chamber. Therefore, it can be used as the airflow control unit. b. In this way, the block member pair 161 as the airflow control portion can be separately provided, or can be integrally provided (door type), and on the left and right sides of the block member 16〇, 161. A side bar member 162 for forming a barrier rib on the right side of the substrate to suppress the flow of the inert gas to the side of the substrate is provided. The side bar member 162 is formed in a plate shape, for example, and is disposed on the upper end surface thereof. The j-cavity to 126 can shield the left and right side spaces of the substrate g. Alternatively, the side bar member 162 can be disposed such that the upper end surface thereof does not contact the upper chamber 126 to shield the left and right side spaces of the substrate 0 0 12 201124689 . Not limited to a plate shape, but also set to fill the base The shape of the left and right side spaces of G. In order to facilitate the formation of the airflow on the substrate G, the length of the airflow direction of the side bar member 162 may be at least longer than the left and right sides of the substrate G, but as shown in FIG. 3 and FIG. The end portion 162a (particularly, the side of the exhaust port 134) does not contact the inner wall 12 of the chamber. Even at this time, a part of the space on the left and right sides of the substrate G is shielded, and the flow of the inert gas to the substrate side can be sufficiently suppressed. And not limited to the illustrated example, the length of each side bar member 162 may be formed at both ends of the opposite side of the chamber _, and the left and right side spaces of the substrate G may be completely shielded (filled). @6, Fig. 7 is the operation of the coating device (10) thus constructed. First, the substrate G is fed, and is placed on the transport arm n: the guide SI, and the photoresist coating unit 112 closes the door 120. The nozzle G of the liquid migration Γ=η20 is applied to the substrate G g which is moved under the first liquid repellent R, and the photoresist liquid r is applied from the substrate G to the other side (the step of FIG. 6 is further performed on the substrate G). The upper surface of the upper chamber 126 of the Kawasaki 114 is completely coated, and the substrate G is placed on the platform 13 of the drying unit 114. Move = 128 lowering the upper chamber, please cover the cavity 124 to close the upper chamber. Once the lower chamber 124 is closed by the upper chamber 126, the platform do is driven by the lifting device 194 W 7 (8). The substrate G is placed close to the abutting block member on the ceiling portion of the chamber, and (6) is in the step __^. At this time, the vacuum pump 148 activates the air in the suction processing space from this state, and the treatment %134 passes through the exhaust pipe. 152 6 Step S4). The air pressure of the two holes is reduced to a predetermined vacuum state (Fig. 201124689. Here, the upper surface of the substrate G is close to the ceiling portion of the chamber, and the upper surface of the substrate G is in a state where the gas is not substantially flowing. By this, the light shattering on the substrate G is naturally dried (pre-drying), and the transfer marks, the orange peel shape, and the drama are suppressed. The cavity to the internal pressure - once the predetermined value (for example, 4 〇〇 Pa or less), or the step S5) of 6 , the platform 13 〇 and the block member biliary should be moved up or down to stop at a predetermined position in the chamber. 7® 匕 匕 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内 内Step s6). The soil is only in the example shown by HI®. In this step S6, the position of the platform 130 does not change. The supply in the constant flow chamber starts to supply the inert gas to the chamber (Fig. 2, S7). Further, the platform Β0 and the block member 160, = limit = the above-mentioned step lion, or the platform allows the block members 160, 161 to move up and down to supply the inert gas. 101幵Starting on the way to the private movement Here, the side member is provided on the side of the substrate G%
側方之間隙之狀態。且設置方塊m 文王大致無基板G 故方塊構件洲面⑽基板G下方， 基板G上方之氣流控制部。、〃 L之非活性氣體導向 *二=氣氣體形成一 時間度， 下良好。 在不發生乾_均之情形 14 201124689 此式餘處理+ —旦舰舰定__乾燥處理結 fH 6驟/8)，上部腔室126即藉由上部腔室移動機構⑶ 上什移動，自減壓乾燥單元1Ϊ4朝下一處理步驟送出基板σ。 歸圖6之流程中’正式乾燥處理時方塊構件160、161 564上昇呈接歧板G(平台130)下方之狀態，於 土扳上表面形成氣流，但在本發明中不限定於該形態。 置平ί二R之種類或膜厚等處理條件，分別移動配 置千。130及方塊構件丨6〇、161於適當之高度位置，控 内Ϊ氣Ϊ ° 5體例而言’於正式乾燥處理途中广欲ί 實現Γ板上表面祕之氣流量時，可藉由例如依序進行下列步驟 乾燁i驟ίίϊ:ΓΓ空室頂棚部之狀態下進行減綱之預備 ^步驟依處理條件未必需要，故於以下說明省略該預備乾燥步 ηη :旦田^置塗佈有光阻液之基板〇於減壓乾燥單元114之平台 平台由上部腔室126蝴閉。且令囉板〇之 之狀播rf構件160、161在收納於收納溝槽i24a 160'161 130 減壓抽吸處理空間内之空氣’使處理空間之氣壓 德、士卜、firt。又’此減壓開始之時間點亦可在腔室關閉 且自供氣口⑶對腔室内供給非活;财在中任者。 體朝-方向流動之狀態，開始正式乾燥處理。 孔 條件:平此非活性氣體之時間點亦可因應處理 及Ϊ塊構件160、161昇降移動至對基板G進行正 式乾^之位置月”後，或是移動中其中任—者。 仃 15 201124689 在圖8⑻所示之狀態下乾燥處理一旦經過既定時間， =才ίΐ 160、161即呈相互維持距離之狀態，如圖8(b)所示在 腔至内同日τ上昇’於既定位置停止。 ㈣^如^^板“方空間更為狹窄’故在基板以表面 附近〜動L流讀少，持續以小流量進行正式乾燥處理。 在如此減壓乾燥處理中，昇降軸平台m及方塊 160、⑹之控制不限定於如上述使用圖8說明之 因應處理條件任意變更。且於賴乾燥中腔如之平台^ ^ 塊構=60、161之高度位置宜因應處理條件詳細設定驅動控制之。 之尚度，可控制形成於腔室内之氣流。 藉此即使依被處理基板光阻液R ^ ^ ^ 齡處理條件施行適當之賴處理The state of the side gap. And the setting block m is substantially without the substrate G, so the block member is below the substrate G (10) under the substrate G, and the airflow control portion above the substrate G. , 非 L of the non-reactive gas guide * two = gas gas formed a time, the next good. In the case where no dryness occurs, the upper chamber 126 is moved by the upper chamber moving mechanism (3), and the upper chamber 126 is moved by the upper chamber moving mechanism (3). The reduced-pressure drying unit 1Ϊ4 sends the substrate σ toward the next processing step. In the flow of Fig. 6, the block members 160 and 161 564 are raised below the boundary plate G (platform 130) in the state of the main drying process, and an air flow is formed on the upper surface of the soil. However, the present invention is not limited to this embodiment. The processing conditions such as the type of the R or the film thickness are adjusted, and the configuration is moved by a thousand. 130 and the block members 丨6〇, 161 are at the appropriate height position, and the internal helium gas is controlled. 5 In the case of the formal drying process, the flow of the gas on the surface of the slab can be achieved by, for example, The following steps are performed: The preparation of the reduction step in the state of the ceiling of the hollow chamber is not necessarily required depending on the processing conditions, so the preliminary drying step ηη is omitted in the following description: The liquid-repellent substrate is closed by the upper chamber 126 on the platform platform of the reduced-pressure drying unit 114. Further, the splayed rf members 160 and 161 are placed in the storage groove i24a 160'161 130 to decompress the air in the vacuum processing space to make the pressure of the processing space, morality, and firt. In addition, the time point at which the decompression starts can also be closed in the chamber and the non-live is supplied to the chamber from the air supply port (3); The state of the body-direction flow begins the formal drying process. Hole condition: The time point of the inactive gas can also be treated according to the treatment and the lifting and lowering of the block members 160, 161 to the position where the substrate G is officially dried, or after the movement is carried out. 仃15 201124689 In the state shown in Fig. 8 (8), once the drying process has elapsed for a predetermined period of time, = 160, 161 is in a state of maintaining a distance from each other, as shown in Fig. 8 (b), the τ rises at the same time in the cavity to stop at a predetermined position. (4) ^ If the board has a "square space is narrower", the substrate is near the surface and the L-flow is read less, and the main drying process is continued at a small flow rate. In the vacuum drying process as described above, the control of the elevating shaft stage m and the blocks 160 and (6) is not limited to the case where the processing conditions described above using Fig. 8 are arbitrarily changed. And in the dry medium cavity such as the platform ^ ^ block structure = 60, 161 height position should be set according to the processing conditions detailed drive control. The degree of control can control the airflow formed in the chamber. Therefore, even if it is processed according to the processing conditions of the substrate photoresist liquid R ^ ^ ^
之乾燥時間，且可形成良好之薄膜。 饮K 祕i ’门於該實施形態中雖係示以包含供氣口 I%及非活性氣體 正供氣’但藉由以排氣口13進行排氣處理，於 士式巧處理中可在腔室内形成氣流，因在基板上方 : 進板上絲触社之乾騎度，錢短時^ 低於麵㈣於 不限疋其數1或排列(佈局）。 於此=:=3』等形成於處理空間底面之例，但不限定 呈長形狀呈正圓形，但不限定於此’亦可 201124689 限形，但不 或是，排氣口丨34及供氣σ 131=非限定。 為喷嘴型口。 U 刀別非没於腔室之孔，亦可 =下參照關說明本發明之触第2實施形離。 置或iG顯示可適用依本發明第2實施“之減壓乾焊穿 ί Ϊ法之™製造用光阻塗佈裝置之另-構2 阻塗佈部單元212與減壓乾燥單元2i4H乞焊單i Μ係依本發明第2實施形態之減壓乾燥裝置。依第 塗佈裝置除如後述氣流㈣部等—部分 1 形態3佈y相同，故省略關於同一構 =重卜複=明1 A 此苐2貫施形態中光阻塗佈部單元212如後述，就美 的光阻塗佈膜可選擇性地實施適於獲得高殘膜率(例域^率99% 以上)之膜質特性，急速且短時間之減壓乾燥 ===殘膜率95%以下)之膜質特性，緩慢且長時=== 地韻觸烟可於面内均一 且一旦於減壓乾烛單元214結束1次(基板1片分)減壓乾燥處 理，腔室開合機構228即舉起上部腔室226以呈腔室解放狀，能， 運送臂218接近該處，自平台230接收處理完畢之基板G以=出 之，朝進行下一步驟預烤之預烤單元(未經圖示)運送基板G。 以下說明減壓乾燥單元214之詳細構成及作用。 下部腔室224如圖10所示，以俯視觀察呈矩形。於此下部腔 室224内側，分別鄰接其四邊腔室壁部224(1)、224(2)、224(3)、 224(4)設有 4 個(或是 4 群組)供氣埠 232(1)、232(2)、232⑶、232(4)， 且於四角隅設有4個(或是4群組)排氣埠234(1)、234(2)、234(3)、 234(4)。 201124689 圖11顯示此減壓乾燥單元214中供氣系統之一例。供氣埠 232(1)、232(2)、232(3)、232(4)分別經由氣體供給管 242(1)、242(2)、 242(3)、242(4)連接包含非活性氣體儲存槽236及送風機(或壓縮 機)238，共通之非活性氣體供給源240。於氣體供給管242(1)、 242(2)、242(3)、242(4)途中，分別設有流量調整閥244⑴、244(2)、 244(3)、244(4)及開合閥 246(1)、246(2)、246(3)、246(4)。所使用 之非活性氣體係例如氮氣。 圖4顯示此減壓乾燥單元14中排氣系統之一例。排氣埠 234(1)、234(2)、234(3)、234(4)分別經由排氣管 252(1)、252(2)、 252(3)、252(4)連接包含真空泵248及壓力控制閥250，共通之排 氣裝置51。於氣體排氣管252(1)、252⑺、252(3)、252(4)途中分 別設有開合閥 254(1)、254(2)、254(3)、254(4)。 圖13〜圖15顯示係此減壓乾燥單元214主要特徵部分之氣流 控制部之構成。圖13係顯示下部腔室224内構成之部分剖面俯視 圖’圖14A及圖14B係關於圖5之I-Ι線之縱剖面圖，圖15八及 圖15B係關於圖13之II-II線之縱剖面圖。 圖13中，氣流控制部260包含： 第1分隔板(或分隔壁)262A、262B，配置於下部腔室224沿 Y方向相對向之側壁224(2)、224(4)内側，平台230 ^兩侧(盡i 接近平台230之位置佳）；及 第1昇降機構264，在圖14A所示之第1高度位置與圖丨犯 所示之第2尚度位置之間昇降移動該第1分隔板262A、262B。The drying time is good and a good film can be formed. In the embodiment, the drink K is used to include the air supply port I% and the inert gas supply gas, but by exhausting the exhaust port 13 in the exhaust process, Airflow is formed in the chamber, because on the top of the substrate: the dry riding degree of the silk contact on the board, the money is short ^^ is lower than the surface (four) is not limited to the number 1 or the arrangement (layout). Here, =:=3" is formed on the bottom surface of the processing space, but is not limited to a long shape in a true circular shape, but is not limited thereto. It may also be limited to 201124689, but not only, the exhaust port 34 and the Gas σ 131 = not limited. It is a nozzle type mouth. The U knife is not in the hole of the chamber, and the second embodiment of the present invention can also be described as the lower side reference. The iG display or the iG display can be applied to the second embodiment of the second embodiment of the present invention, the vacuum-drying and soldering method of the photoresist coating device for the second coating, the resist coating unit 212 and the vacuum drying unit 2i4H According to the second embodiment of the present invention, the vacuum drying apparatus according to the second embodiment of the present invention is the same as the airflow (four) portion and the like, and the part 1 is the same as the third embodiment, and the same configuration is omitted. In the second embodiment, the photoresist coating unit unit 212 can selectively perform a film quality characteristic suitable for obtaining a high residual film ratio (an example of a 99% or more), as will be described later. Membrane characteristics of rapid and short-term decompression drying === residual film rate of 95% or less), slow and long-term === The rhythm of the rhyme can be uniform in the plane and once once at the decompression dry candle unit 214 (Substrate 1 piece) Decompression drying process, the chamber opening and closing mechanism 228 raises the upper chamber 226 to be in a chamber liberation state, and the transport arm 218 is close to the place, and the processed substrate G is received from the platform 230. = The substrate G is transported to the pre-bake unit (not shown) which is pre-baked in the next step. The details of the reduced-pressure drying unit 214 will be described below. The lower chamber 224 has a rectangular shape in plan view as shown in Fig. 10. The inner side of the lower chamber 224 is adjacent to the four side chamber wall portions 224(1), 224(2), 224(3), respectively. 224(4) has 4 (or 4 groups) air supply ports 232(1), 232(2), 232(3), 232(4), and 4 (or 4 groups) in the four corners. Exhaust gas 埠 234 (1), 234 (2), 234 (3), 234 (4). 201124689 Figure 11 shows an example of the gas supply system in the reduced-pressure drying unit 214. Air supply 埠 232 (1), 232 (2), 232(3), and 232(4) are respectively connected via the gas supply pipes 242(1), 242(2), 242(3), 242(4), including the inert gas storage tank 236 and the blower (or compression) 238, a common inert gas supply source 240. Flow regulating valves 244 (1), 244 (2) are provided in the middle of the gas supply pipes 242 (1), 242 (2), 242 (3), 242 (4) 244(3), 244(4) and opening and closing valves 246(1), 246(2), 246(3), 246(4). The inert gas system used is, for example, nitrogen. Figure 4 shows this decompression. An example of an exhaust system in the drying unit 14. The exhaust ports 234(1), 234(2), 234(3), 234(4) are respectively via exhaust pipes 252(1), 252(2), 252(3) ), 252 (4) Connecting a vacuum pump 248 and a pressure control valve 250, common to the exhaust device 51. On the way of the gas exhaust pipes 252 (1), 252 (7), 252 (3), 252 (4), respectively, an opening and closing valve 254 is provided ( 1), 254(2), 254(3), 254(4). 13 to 15 show the configuration of the air flow control unit which is the main characteristic portion of the reduced-pressure drying unit 214. Figure 13 is a partial cross-sectional plan view showing the inside of the lower chamber 224. Figure 14A and Figure 14B are longitudinal cross-sectional views taken along the line I-Ι of Figure 5, and Figures 15 and 15B are related to the line II-II of Figure 13 Longitudinal section. In FIG. 13, the air flow control unit 260 includes: first partition plates (or partition walls) 262A and 262B disposed on the inner side of the lower chamber 224 facing the side walls 224 (2) and 224 (4) in the Y direction, and the platform 230 ^ Both sides (where i is close to the position of the platform 230); and the first lifting mechanism 264 moves up and down between the first height position shown in FIG. 14A and the second degree position shown in FIG. Partition plates 262A, 262B.
第1分隔板262A、262B如圖13所示，自接近設於沿X方向 平台230之單側(圖之左側)之供氣埠232⑴之位置，亦即大致接觸 腔室壁部224(1)之位置延伸至平台230之相反侧(右側)之供氣埠 232(3)及排氣埠234(3)、234(4)前之位置。且第丨分隔板262A、262B 其尺寸宜沿鉛直方向(Z方向）自下部腔室224底面達上部腔室226 之下表面(頂棚）。 又，第1分隔板262A、262B於第1高度位置自下部腔室224 底面沿鉛直方向突出至達上部腔室226下表面(腔室頂棚)之高 18 201124689 ^ 度，或接近此之高度止(圖14A)，於第2冑度位置下降至第！分隔 板262A、262B上端接近下部腔冑224底面之高 '高細_。於下部腔室似底壁，形成第1分隔板2似、、繼 分別用以下降(退避)至第2高度位置之凹部265A、265B。 第1昇降機構264包含： 各1根或各複數根支持棒266A、266B，分 262A、262B下端，沿鉛直方向延伸； 矛刀丨同槪 水平支持板施’平行支持此等支持棒266Α、66β ;及 ，降致動器272 ’經由昇降驅動軸27〇、结合此水平支持板施。 昇降致動器2了2由例如空壓缸或電動線性馬達所構成。支持 棒266A、266B卩可上下移動之方式穿通下部腔室22 由密封構件274真空封裝之。 -土稽 且氣流控制部260如圖13所示，包含： 第2分隔板(或分隔壁)276，配置於平台23〇周圍 剖面呈门字狀；及 第2昇降機構278，在® 14A或圖15A所示之第3高度位置 與^ 14B或圖15B所示之第4高度位置之間昇降移動此第2分隔 板76 〇 第2分隔板276包含： 川Ϊ 1平板部編，於平台230與第1供氣琿232(1)對向之圖 左側旁邊沿Y方向延伸；及 第2平板部276b、276c，於平台230與第}分隔板262A、262B 對向之圖上侧及下側旁邊沿X方向延伸。 而棋Ϊ亦可以第2分隔板276分隔平台23G之相反側(圖之右侧） 之’但就平台23〇下空間排氣性之觀點而言宜如此實施形 恶解放而構成之。 、 又，第2分隔板276於第3高度位置自下部腔室224底面a ，直方向突出至接觸由平台挪錢之基板G #面(下表 :或接近於此之咼度止(圖14A、圖15A)，於第4高度位置其上 而下降至接近下部腔至224底面之咼度或低於此之高度(圖mb、 19 201124689 mS2 ^276 " 板繼、262B處於第1高度’且第2分隔 5 276 向f時，在第1分11高板施、2㈣與第2分隔 盡量小的間隙接近。 之間，且^者兩者大致不接觸， 第2昇降機構278包含： 方向^或複數根支轉282，連接第2分隔板276下端，沿錯直 水平支持板284，平行支持此等支持棒282 ;及 ，282以可上下移動之方式穿通下部腔室似 件290真空封裝之。 広主稭由在釘稱 时平台230、經由沿敍直方向延伸之昇降驅動軸观結合致 ^ 與^送臂218(圖1、圖2)傳遞基板G時，或i減壓乾 燥t中為調即與腔室頂棚(上部腔室226下表面)之距離或間隙Η 可幵降移動。昇降驅動軸292以可上下移動之方式穿: 224底壁，藉由密封構件296真空封裝之。方' 牙通下孤至 ⑽雜轉议(獅1供轉，其他供 =4 === 第2供氣琿。且如圖13所示，於腔 至^24、226)内，供氣埠232⑴與第2分隔板27 1區域[El] ’除此第！區域[則外之區域，特別是自^氣 i J第3位置時之第1分隔板262Α、雇 及第Μ 板276陰影中之所有區域係第2區域9 此減壓乾燥單元214中包含控制各部及整體動作之主㈣器 可包含在主控制器控制下控^第1 及弟^降機構264、278構動作之局部控制器(未經圖示）。 260 ίίί ’揭示此減壓乾燥單元214中氣流控制部 201124689 模式严:26Q #㈣#成^可選擇性地在以下二個 供氣路線’俾由圖左側之第1 而到，右側之排氣埠234(^、—234^:^平台230及基板G上 氣流二之^制。情非/雅就體或疋其他氣體實質上解除如上述 膜所inf乾燥單元214可選擇性地實施適於獲得高殘膜率 膜質特性，緩慢且長時間之減壓乾燥步驟其 226)L^mB顯示緊接在減燥處理開始後腔室(224、 2 Ϊ Ϊ :且關閉所有供氣璋232(D〜2耶），不導入非活性 =氣系統(圖12)作動，經由所有排氣埠234〇)〜234(4)進 ϊί ^ Γ丄° 1示’將殘留於腔室(224、226)内之空氣，以及自As shown in FIG. 13, the first partition plates 262A and 262B are located close to the air supply port 232(1) provided on one side (the left side of the figure) of the platform 230 in the X direction, that is, substantially contacting the chamber wall portion 224 (1). The position extends to the position of the gas supply port 232 (3) and the exhaust ports 234 (3), 234 (4) on the opposite side (right side) of the platform 230. Further, the second partition plates 262A, 262B are preferably sized from the bottom surface of the lower chamber 224 to the lower surface (the ceiling) of the upper chamber 226 in the vertical direction (Z direction). Further, the first partition plates 262A and 262B protrude from the bottom surface of the lower chamber 224 in the vertical direction at a first height position to a height of 18 201124689 ^ degrees at a lower surface (chamber ceiling) of the upper chamber 226, or a height close thereto. (Fig. 14A), down to the 2nd position! The upper ends of the partition plates 262A, 262B are close to the height 'high thinness' of the bottom surface of the lower chamber 224. The lower chamber is like a bottom wall, and the first partitioning plate 2 is formed, and the recesses 265A and 265B are respectively lowered (retracted) to the second height position. The first lifting mechanism 264 includes: one or each of the plurality of support rods 266A and 266B, and the lower ends of the branches 262A and 262B extend in the vertical direction; the spear cutters and the horizontal support plates are configured to support the support rods 266Α, 66β in parallel. And, the lower actuator 272' is coupled to the horizontal support plate via the lift drive shaft 27'. The lift actuator 2 is composed of, for example, an air compressor or an electric linear motor. The support rods 266A, 266B are vertically permeable to the lower chamber 22 and are vacuum-sealed by the sealing member 274. As shown in FIG. 13, the airflow control unit 260 includes a second partition plate (or partition wall) 276 disposed in a cross-sectional shape around the platform 23A, and a second lift mechanism 278 at the ® 14A. The second partitioning plate 76 is moved up and down between the third height position shown in FIG. 15A and the fourth height position shown in FIG. 15B or FIG. 15B. The second partitioning plate 276 includes: The platform 230 extends in the Y direction along the left side of the opposite side of the first air supply port 232 (1); and the second flat plate portions 276b and 276c are on the opposite side of the platform 230 and the partition plates 262A and 262B. The side and the lower side extend in the X direction. The chessboard may also be formed by the second partitioning plate 276 separating the opposite side of the platform 23G (the right side of the figure), but it is preferable to carry out the liberation of the space in view of the space exhaustibility of the platform 23. Further, the second partitioning plate 276 protrudes from the bottom surface a of the lower chamber 224 at the third height position to the surface of the substrate G# that is in contact with the platform by the platform (the following table: or close to the temperature (Fig. 14A, FIG. 15A), at the fourth height position, and descends to a degree close to or below the lower chamber to the bottom surface of the 224 (Fig. mb, 19 201124689 mS2 ^ 276 " slab, 262B at the first height 'When the second partition 5 276 is in the f direction, the first minute 11 high plate, the second (4) and the second partition are as close as possible to each other. The second lifting mechanism 278 includes: The direction ^ or the plurality of branches 282 are connected to the lower end of the second partitioning plate 276, along the wrong horizontal supporting plate 284, and support the supporting bars 282 in parallel; and, 282 is passed through the lower chamber-like member 290 so as to be movable up and down. Vacuum-packed. The main straw is transferred from the platform 230 when the nail is called, and the substrate G is transferred by the lifting and lowering drive shaft 218 (Fig. 1, Fig. 2) extending in the straight direction, or i is decompressed. In the dry t, the distance or the gap between the chamber and the ceiling of the chamber (the lower surface of the upper chamber 226) can be lowered and moved. The lifting drive shaft 292 Can be moved up and down: 224 bottom wall, vacuum encapsulation by sealing member 296. Fang 'tooth under the solitary to (10) miscellaneous transfer (Lion 1 for rotation, other for = 4 === 2nd gas supply. And as shown in FIG. 13, in the cavity to 24, 226), the gas supply port 232 (1) and the second partition plate 27 1 area [El] 'except the first! area [the outer area, especially since the gas The first partition plate 262Α at the third position of the iJ, and all the areas in the shadow of the hired and the second plate 276 are the second region 9. The decompression drying unit 214 includes the main (four) device for controlling the respective parts and the overall operation. The main controller controls the local controller (not shown) of the control unit 1 and the lowering mechanism 264, 278. 260 ίίί 'Disclose the airflow control unit 201124689 in the decompression drying unit 214 Mode: 26Q # (4) #成^ can be selectively used in the following two gas supply routes '俾 from the first to the left of the figure, the right side of the exhaust 埠 234 (^, - 234 ^: ^ platform 230 and the substrate G on the air two ^ In fact, the body or the other gas is substantially released as the above-mentioned film inf drying unit 214 can be selectively implemented to obtain high residual film rate film properties, slow and The long-term decompression drying step 226) L ^ mB shows the chamber immediately after the start of the drying reduction process (224, 2 Ϊ Ϊ : and all gas supply 璋 232 (D ~ 2 yeah) is turned off, no inactive = The air system (Fig. 12) is actuated via all exhaust 埠234埠)~234(4) into ϊί ^ Γ丄° 1 indicating 'the air remaining in the chamber (224, 226), and
四角隅之排氣埠234⑴〜234(4)，並迅速排出之Ζ事^導玆J 二亦可Ϊ此開始後馬上抽真空時開啟供氣埠 232(1)〜232(4) ’以既定流量導入非活性氣體。 針對收納於腔室(224、226)内之處理對象之基板G選擇快速· 短時間之減壓賴步驟時，可在自減壓乾燥處理開始經過既定時 間之時點’或是腔室内壓力達設定值(例如約働pa)之時點自圖 16A及圖16B所示之第2模式切換為圖17A及圖17B所示之第1 模式。 一此時，氣流控制部260使第！昇降機構264作動，令第i分 隔板262A、262B自至此為止之第2高度位置上昇移動至第i高 度位置，並使第2昇降機構278作動，令第2分隔板276 自至此 為止之第4高度位置上昇移動至第3高度位置。 且於供氣系統(圖11)中，開啟開合閥246(1)，保持其他所有開 合閥246(2)、246(3)、246(4)呈關閉狀態。藉此，於腔室(224、226) 21 201124689 内，僅第1供氣埠232(1)噴出非活性氣體。其他供氣埠232(2)、 232(3)、232(4)皆保持關。在此調節流量控制閥 氣埠232⑴供給之細线體流量被定值^2GL(^升)=： 另一方面，於排氣系統(圖12)中，開合閥254(3)、254(4)唯持 開啟狀態，其他開合閥254⑴、25%)則切換為關閉狀態。藉此， 於腔室(224、226)内，自第！供氣琿232⑴觀察位於平纟现相反 側之排氣埠234(3)、234(4)持續進行排氣動作’接近供氣埠23 之排氣埠234(1)、234(2)麟氣動作休止。在此，職由供 232(1)對腔t内供、給之非活性氣體流量調雜力控制閥25〇:、俾於 腔室内獲得既定壓力或是排氣速度。 、 如f 17A及圖17B所示，於第1模式中，藉由因第1分隔板 及第+2分隔板76造成之分隔壁作用或氣流限制作用， 由ί、氣埠232(1)喷出之氮氣大致或大部分⑼％以上佳)在平△现 ίίί?上沿x方向流動(通過)，朝對面側之排氣蟫234(3)、2〇34(4) 叔λ此正在進行減壓乾燥處理中，使非活性氣體在基 ，上方向(X方向)甚至以層流之方式均―流動，可順 j速”除自紉G上的光時細揮發之溶劑，提高溶揮發 速度’敢終會促進光阻表面變質（固化），且在基板G上於 ^ 二地獲得减鮮之光_質躲。如此，減壓概處理所時 間短(例如約30秒），藉此即可進行減壓乾燥處理。 ， 又，依第2實施形態之減壓乾燥處理中，不僅壓 ΐΪίί，基板G與腔室226之間之距離間__ 的匕驟乡數，為此平台230之高度位置有時可變。此時，如圖 所示’配合平台230之向度位置調整，氣流控制部26〇 八 隔板276之第3高度位置為可變調整，於第（模式，相對^ ς 間隙Η ’第2分隔板276上表面經常保持接近基板G下表面^ 觸般之狀態。藉此，可徹底防止由供鱗Μ = 體一部分通過基板G下。 、3:5夂非活性氣 22 201124689 針對處理對象之基板G選擇缓慢•長時間減壓乾燥步驟時，於 減壓乾燥處理開始再經過蚊時間之時點，妓腔室祕力達設 定值(例如約4GGPa)之時點，維㈣2模式 ^ 16B之狀態切換為如圖19所示之狀態。 α &口 此時，供氣系'统(圖11)中，開啟所有開合闕施⑴、施⑺、 246(3)、246(4)。藉此’於腔室(224、226)内，所有供氣埠232⑴、 232(2)、232(3)、232(4)噴出非活性氣體。惟調節流量調整閥244⑴、 244(2)、244(3)、244(4)，設定非活性氣體供給流量偏少（例如 2L/min)。且供氣埠234⑴、234⑺、234(3)、234(4)之喷吐流量宜 均一° ' 另-方面，排氣系統(圖12)中，維持所有開合闕祝⑴、 254(2)、254(3)、254(4)呈開啟狀態’所有排氣埠234⑴、234(2)、 234(3)、234(4)持鉍進行排氣。惟配合由供氣埠⑴、2 232(3)、232(4)供給之非活性氣體流量調節壓力控制閥25〇，俾於 腔室内維持既定壓力。且供氣琿232⑴、232(2)、232(3)、232(4) 之噴吐流量於平台230上的基板g宜均一。 如此’在減壓乾燥處理中，於f 2模式所有供氣埠放⑴、 」）、32(3)、23¾4)呈開啟(導通)狀態，非活性氣體均 一且以小 朝平台230上的基板G喷吐，且所有排氣璋234⑴、234(2)、 、壬啟(導通)狀態進行排氣時，對腔室内供給之非 ^ Ϊ板G乃至於平台23G下或周圍流動而易於排 ^苴f ^上大致不形成氣流，特別是—方向之氣流。因此， 心Γ反-、阻塗佈膜揮發之溶劑易於滯留在附近，揮發速度受到The exhaust of the four corners 埠 234 (1) ~ 234 (4), and quickly discharge the anecdote ^ guide Z J can also open the air supply when the vacuum is started immediately after the start 埠 232 (1) ~ 232 (4) 'to be established The flow rate introduces an inert gas. When the step of decompressing the fast and short time is selected for the substrate G of the processing object stored in the chambers (224, 226), the time at which the predetermined time elapses from the start of the decompression drying process can be set or the pressure in the chamber can be set. The value (e.g., about pa) is switched from the second mode shown in Figs. 16A and 16B to the first mode shown in Figs. 17A and 17B. At this time, the airflow control unit 260 makes the first! The elevating mechanism 264 is actuated to move the i-th partition plates 262A and 262B up to the i-th height position from the second height position up to this point, and the second elevating mechanism 278 is actuated to make the second partition plate 276 The fourth height position is raised and moved to the third height position. And in the air supply system (Fig. 11), the opening and closing valve 246 (1) is opened to keep all other opening and closing valves 246 (2), 246 (3), and 246 (4) in a closed state. Thereby, only the first gas supply port 232(1) ejects the inert gas in the chamber (224, 226) 21 201124689. Other gas supply ports 232 (2), 232 (3), and 232 (4) are kept off. In this case, the flow rate of the fine line body supplied by the flow control valve gas 埠 232 (1) is set to ^ 2 GL (^ liter) =: On the other hand, in the exhaust system (Fig. 12), the opening and closing valve 254 (3), 254 ( 4) Only open state, other opening and closing valves 254 (1), 25%) are switched to the off state. Thereby, in the chamber (224, 226), since the first! The air supply port 232(1) observes the exhaust ports 234(3) and 234(4) on the opposite side of the flat side, and continues to perform the exhausting operation 'the exhaust gas 234(1), 234(2) of the gas supply port 23 The action is stopped. Here, the service 232 (1) supplies the inert gas flow control valve 25 对 to the chamber t, and obtains a predetermined pressure or an exhaust speed in the chamber. As shown in f 17A and FIG. 17B, in the first mode, by the partitioning wall action or the airflow restricting action caused by the first partitioning plate and the +2th dividing plate 76, the 埠, 埠, 232 (1) ) The nitrogen gas that is ejected is roughly or mostly (9)% or more.) Flows in the x direction on the flat △ ίίί?, and the exhaust 蟫 234(3), 2〇34(4) In the vacuum drying treatment, the inert gas is allowed to flow in the upper direction (X direction) or even in the laminar flow, and the solvent which is finely volatilized when the light on the G is removed can be increased. The rate of dissolution of the solvent 'will eventually promote the deterioration of the surface of the photoresist (curing), and the light on the substrate G is obtained in the second place. Therefore, the time for the decompression process is short (for example, about 30 seconds). In this way, in the vacuum drying treatment according to the second embodiment, not only the pressure ΐΪ ί , but also the distance between the substrate G and the chamber 226 is __ The height position of the platform 230 is sometimes variable. At this time, as shown in the figure, the orientation position of the mating platform 230 is adjusted, and the airflow control unit 26 is the third of the eight partitions 276. The height position is a variable adjustment, and in the first (mode, relative to the gap Η ' the upper surface of the second partitioning plate 276 is always kept close to the lower surface of the substrate G. Thus, the scale can be completely prevented. Part of the body passes through the substrate G. 3:5夂Inactive gas 22 201124689 Slow selection of the substrate G to be processed. • When the drying step is performed for a long time, the time is reduced after the decompression drying process starts. When the secret force reaches the set value (for example, about 4 GGPa), the state of the dimension (four) 2 mode ^ 16B is switched to the state shown in Fig. 19. α & mouth at this time, in the gas supply system (Fig. 11), all are turned on. Opening and closing facilities (1), Shi (7), 246 (3), 246 (4). By means of 'in the chamber (224, 226), all gas supply ports 232 (1), 232 (2), 232 (3), 232 ( 4) The inert gas is ejected. However, the flow rate adjustment valves 244 (1), 244 (2), 244 (3), and 244 (4) are adjusted to set a small flow rate of the inert gas supply (for example, 2 L/min), and the gas supply 埠 234 (1), 234(7), 234(3), 234(4) should have a uniform flow rate of '°°'. In the exhaust system (Fig. 12), all opening and closing wishes (1), 254(2), 254(3) are maintained. ), 254 (4) is in the open state 'all exhaust ports 234 (1), 234 (2), 234 (3), 234 (4) are exhausted. Only with the supply of gas (1), 2 232 (3), 232 (4) The inert gas flow regulating pressure control valve 25 供给 is supplied to maintain a predetermined pressure in the chamber, and the discharge flow of the gas supply ports 232 (1), 232 (2), 232 (3), and 232 (4) is on the platform. The substrate g on 230 is preferably uniform. Thus, in the vacuum drying process, all the gas supply (1), "), 32 (3), 233⁄44) in the f 2 mode are in an on state, and the inert gas is uniform and the substrate on the platform 230 is small. When G is vented and all of the exhaust ports 234(1), 234(2), and 壬 (on) are exhausted, it is easy to discharge the non-plate G supplied to the chamber or under or around the platform 23G. There is substantially no airflow, especially the airflow in the direction, on f^. Therefore, the solvent of the palpitations and the volatilization of the coating film is liable to stay in the vicinity, and the volatilization rate is affected.
Μ。藉此，因減壓乾燥光阻表面之變質(固化)緩慢，可在基板G 均—地獲得低殘醉光阻特性。且減壓乾燥處理所 品日守間長(例如約60秒）。 又’選擇緩慢•長時間減度乾燥步驟時，作為另一實施例，亦 ΐίΪ壓處理開始再經過既定時間後，或是腔室_力達設 供氣埠 232(1)、232(2)、232(3)、232(4)呈關閉(切 断)狀態，直接使用所有排氣埠234⑴、234(2)、234⑶、234(4)持 23 201124689 續巧排氣動作。此時，自基板G光阻塗佈膜揮發之溶劑係主要 排氣氣體。 -單元214中，減壓乾燥處理結束時，如圖20所 不，k擇弟2杈式，所有供氣埠232⑴、232(2)、23 流量喷吐非活性氣體，同日_排氣埠 234(1) 234(2)、234(3)、234(4)呈開啟(導通)狀態，暫時 =氣(吹掃），接著關閉所有排氣埠234(1)、234(2)、234(3)、23 藉此，自減壓狀態切換腔室(224、226)内蒙氣為大壓狀熊 腔室224可進行開啟操作(腔室解放）。 如上述，於此實施形態中，選擇快速•短時間減壓 時’當減壓乾燥處理開始後馬上抽真空域壓乾燥處士束= 行吹掃，y選擇第i分隔板262A、遍分別退避至第7 置及第4局度位置之第2模式’使用所有供氣埠232⑴、 232(3)、232(4)對腔室内供給非活性氣體，使用所有排氣埠幻 辦⑺、2；34(3)、辦⑷使腔室内排氣，故可以更高效率進行此類 型之減壓乾燥步驟，亦可實現處理時間進一步縮短化。 、 事實上，作為另一程序，效率雖稍微降低，但亦可自減壓乾 燥處理開始起至絲完全不2模式，縣第〗模式。即使 在此時亦需對應各階段切換非活性氣體流量及排氣速度。 且於減壓乾燥處理開始再經過既定時間，或是腔室内壓力 設定值起至減壓乾燥處理結束止之期間内，亦可依序或交互切換 巧第1模式使用非活性氣體之減壓乾燥(圖17A、圖17B)與依第2 模式使用非活性氣體之減壓乾燥(圖19)。 ’、. —a以^雖已說明本發明較佳實施形態，但本發明不限定於上述 只施幵> 態，於其技術性構想範圍内可進行各種變形或變更。 例如圖21A及圖21B所示，亦可包含一方塊構造，俾載置基 板G之平台230填滿基板G下的空間，直到下部腔室224底面。 如此之平台構造中，包含自下而上穿通下部腔室224底壁及平台 230並可昇降之升降銷231與昇降致動器295之升降機構2〇4在平 台上舉起基板G或使基板下降以裝載/卸載基板。 24 201124689 此時’於第i模式下，方塊構造平纟23G阻止由供氣埠232⑴ ，出之非活性氣體通過基板GT，藉由與第i分隔板262a、262b 同’使在基板G _L形成-^向(X ；$向)之氣流之魏奏效。因 此’可以平台230替代第2分隔板276。 事實上，為如上述使間隙Η可變調整，在減壓乾燥處理中基 反G朝上麟平台23〇上表面時，雖省略圖示但與上述實施形能 相同’其構成宜包含第2分隔板276。 ' 〜 且關於排氣系統，如圖22Α及圖22Β所示，亦可構成在平△ 230下設有！個或複數排氣埠2〇6。此時，於第！模式下，由^ =32⑴噴出之非活性氣體大致或大部分在平台23Q及基板〇'上 方向(X方向)流動’通過基板G相反側(圖之右側)—端再迴 (〉曰入)至基板G及平台230下，由排氣埠206吸入。 278 施形態中，藉由第1昇降機構崩及第2昇降機構 針/刀隔板262Α、262Β及第2分隔板276昇降移動，故即 ，在，閉腔室(224、226)之期間内亦可诚模式。作為另一實施形 ^ ’亦可構成為切祕式可財敏卸之对絲魏設第 隔板26^Α、262Β及/或第2分隔板276於腔室内。 加!^至本身構造或形狀當然不限於上述實施形態，腔室内外各 台、供氣埠、排氣埠之構造、健、配置位置等亦 不限於上述貫施形態，可進行各種變形。 品明巾被處理基板不限MLCD用玻璃基板，亦可係其他平 壓i it ί板或半導體晶圓、CD基板、光罩、印刷基板等。減 材象之塗佈液亦不限於光阻液，亦可係例如層間絕緣 材枓、；I電質材料、配線材料等處理液。 【圖式簡單說明】 成之系顯示具備依本發明之減歷乾燥裝置之塗佈裝置整體構 圖2係圖1塗佈裝置之侧視圖。 圖3係依本發明之減壓乾燥裳置—實施形態之俯視圖。 25 201124689 圖4，圖3之A-A箭視剖面圖。 圖5係圖3之B_B箭視剖面圖。 ^ 6係f示依本發明之減壓乾燥裝作触之流程。 剖面i。a〜⑼係用以說明依本發明之減壓乾燥裝置狀態變遷之 剖面^ %a)〜(b)係用以說明依本發明之減壓乾燥I置狀態變遷之 分分—實施職巾卿製韻光_職置構成之部 =係顯示上述光阻塗佈裝置構成之俯視圖。 ^ 示ΐ施形態光阻塗佈單元中供氣系統—構成例圖。 示Ϊ施形態光阻塗佈單元中排氣系統—構成』。 面俯^ 貫施形態光阻塗佈單元中腔室内部構成之部分剖 剖面ΐ ^係關於以氣流控制部選擇第1模式時圖5之W線之縱 剖面ΐ _係、關於以氣流控制部選擇第2模式時圖5之W線之縱 縱剖系關於以氣流控制部選擇第1模式時圖5之Μ線之 縱剖Ξ Γ罐以氣流控刪_模她5之贴線之 狀態繼減麵㈣㈣糊各部及氣流 狀態==綱繊轉驰_姆部及氣流 及氣麵树卿第1模輪室內各部 及氣===纖理+鄉W瓣部 26 201124689 剖面ΐ ί8係顯示相對於基板上關_整氣流控制部之對應之縱 仏& Ϊ 示於減壓乾燥處理中在選擇以第2模式對腔室内供 給非活性氣料之情形下各部聽赫態之俯視圖。 a士久^ 係顯示於減壓乾燥處理結束時以非活性氣體吹掃腔室内 守各縣氣流狀態之縱剖面圖。 f 21A係顯示使用方塊構造平台與升降銷之實施形態 成及作用之一縱剖面圖。 由《 ί 21B係顯不使用方塊構造平台與升降銷之實施形態裝置構 成及作用之另一縱剖面圖。 視圖圖22A係顯示於平台下設置排氣埠之實施形態裝置構成之俯 圖22B係顯示於平台下設置排氣埠之實施形態裝置構成及 用之縱剖面圖。 圖23係顯示習知減壓乾燥單元概略構成之剖面圖。 【主要元件符號說明】 9、51、124、224…下部腔室 13、134...排氣口 Μ、152…排氣管 15、148、248…真空泵 20…方塊構件 26、132."供氣口 5〇…減壓乾燥裝置 51…排氣裝置 52、126、226…上部腔室 54…固定縛板 76…弟2分隔板 100…塗佈裝置 110、210…支持台 27 201124689 112、212...光阻塗佈單元 114、214...減壓乾燥單元 116.. .導執 118、218...運送臂 120.. .閘門 122.. .喷嘴 124a…收納溝槽 124b...腔室内壁 128.. .上部腔室移動機構 130、230...平台 136.. .非活性氣體供給部 142.. .供氣管 160、161…方塊構件 162.. .側桿構件 162a...端部 164、194...昇降裝置 200.. .光阻塗佈裝置(塗佈裝置） 204.. .升降機構 206、234(1)、234(2)、234(3)、234(4)··.排氣埠 224(1)、224(3)…腔室壁部 224(2)、224(4)…側壁(腔室壁部） 228.. .腔室開合機構 231.. .升降銷 232(1)、232(2)、232(3)、232(4)…供氣埠 242(1)、242(2)、242(3)、242(4)…氣體供給管 244(1)、244(2)、244(3)、244(4)…流量調整閥 236…非活性氣體儲存槽 238.. .送風機 240.. .非活性氣體供給源 28 201124689 246(1)、246(2)、246(3)、246(4)、254(1)、254(2)、254(3)、254(4)... 開合閥 250…壓力控制閥 252(1)、252(2)、252(3)、252(4)..·氣體排氣管(排氣管） 260.. .氣流控制部 262A、262B...第 1 分隔板 264…第1昇降機構 265A、265B、280···凹部 266A、266B、282...支持棒 268、284...水平支持板 270、286、292...昇降驅動軸 272、288、294、295…昇降致動器 274、290、296...密封構件 276a...第1平板部 276b、276c...第 2 平板部 276.. .第2分隔板 278…第2昇降機構 G. ..基板 阳]…第1區域 [EJ...第2區域 H. ·.距離間隔(間隙） R...光阻液 S1〜S8...步驟 29Hey. Thereby, the deterioration (curing) of the surface of the photoresist by the decompression is slow, and the low-resistance photoresist characteristics can be obtained uniformly on the substrate G. The product is dried under reduced pressure (e.g., about 60 seconds). In addition, when the selection step is slow and the drying step is long-term reduction, as another embodiment, after the lapse of the predetermined time, or the chamber _ force reaches the gas supply 232 (1), 232 (2) , 232 (3), 232 (4) is closed (disconnected) state, directly use all exhaust 埠 234 (1), 234 (2), 234 (3), 234 (4) holding 23 201124689 continued exhaust operation. At this time, the solvent volatilized from the substrate G photoresist coating film is mainly an exhaust gas. - In unit 214, when the decompression drying process is finished, as shown in Fig. 20, k is selected as the second type, and all the gas supply ports 232(1), 232(2), and 23 are discharged at the flow rate of the inert gas, and the same day_exhaust gas 234 ( 1) 234(2), 234(3), 234(4) are in the open (on) state, temporarily = gas (purge), then close all exhaust gases 234 (1), 234 (2), 234 (3) Therefore, the self-decompression state switching chamber (224, 226) can be opened (the chamber is liberated) by the large-pressure bear chamber 224. As described above, in the embodiment, when the rapid/short-time decompression is selected, 'when the decompression drying process is started, the vacuum field is pressed to dry the sergeant beam = row purge, y selects the i-th separation plate 262A, and retracts separately. The second mode to the seventh and fourth local positions 'use all the air supply ports 232 (1), 232 (3), 232 (4) to supply the inert gas into the chamber, using all the exhaust gas illusion (7), 2; 34(3) and (4) exhaust the chamber, so this type of vacuum drying step can be performed with higher efficiency, and the processing time can be further shortened. In fact, as another procedure, the efficiency is slightly reduced, but it can also be started from the decompression drying process until the silk is completely out of the 2 mode. Even at this time, it is necessary to switch the inert gas flow rate and the exhaust speed in accordance with each stage. And after the decompression drying process starts for a predetermined period of time, or during the period from the pressure setting in the chamber to the end of the decompression drying process, the first mode may be sequentially dried or decompressed using an inert gas. (Fig. 17A, Fig. 17B) and drying under reduced pressure using an inert gas according to the second mode (Fig. 19). The present invention has been described with reference to the preferred embodiments of the present invention. However, the present invention is not limited to the above-described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. For example, as shown in Figs. 21A and 21B, a block structure may be included, and the platform 230 on which the substrate G is placed fills the space under the substrate G until the bottom surface of the lower chamber 224. In such a platform configuration, the lifting mechanism 231 including the bottom and bottom of the lower chamber 224 and the platform 230 and the lifting and lowering pins 231 and the lifting actuator 295 are lifted on the platform to lift the substrate G or the substrate. Drop to load/unload the substrate. 24 201124689 At this time, in the i-th mode, the block structure plate 23G blocks the inert gas from the gas supply port 232(1), passes through the substrate GT, and is made the same as the i-th separation plate 262a, 262b on the substrate G_L. The effect of the -^ direction (X; $ direction) of the air flow is formed. Therefore, the second partitioning plate 276 can be replaced by the platform 230. In fact, in order to variably adjust the gap 如 as described above, when the base reverse G is directed to the upper surface of the upper platform 23 in the reduced-pressure drying process, the illustration is the same as the above-described embodiment, and the configuration preferably includes the second Partition 276. As for the exhaust system, as shown in Fig. 22Α and Fig. 22Β, it can also be constructed under the flat △ 230! Or multiple exhaust 埠 2〇6. At this time, in the first! In the mode, the inert gas ejected by ^=32(1) flows substantially or mostly in the upper direction of the platform 23Q and the substrate (' (the X direction) through the opposite side of the substrate G (the right side of the figure) - the end is returned (> 曰) Under the substrate G and the platform 230, it is sucked by the exhaust port 206. In the embodiment, the first elevating mechanism collapses and the second elevating mechanism needle/blade spacers 262Α, 262Β and the second partitioning plate 276 move up and down, that is, during the closing of the chamber (224, 226) Can also be honest mode. As another embodiment, the configuration may be configured to be a cleavable type of detachable separator 26 Α, 262 Β and/or a second partition 276 in the chamber. It is needless to say that the structure or the shape of the structure is not limited to the above-described embodiment, and the structure, the health, the arrangement position, and the like of each of the inside and outside of the chamber, the air supply port, and the exhaust port are not limited to the above-described configuration, and various modifications are possible. The substrate to be treated is not limited to a glass substrate for MLCD, and may be other flat plates, semiconductor wafers, CD substrates, photomasks, printed substrates, and the like. The coating liquid for reducing the material is not limited to the photoresist liquid, and may be, for example, an interlayer insulating material ;, a treatment material such as an electric material or a wiring material. BRIEF DESCRIPTION OF THE DRAWINGS The entire structure of a coating apparatus having a reduced-drain drying apparatus according to the present invention is shown in Fig. 2 as a side view of the coating apparatus of Fig. 1. Figure 3 is a top plan view of a reduced pressure dry skirt according to the present invention. 25 201124689 Figure 4, A-A arrow cross-sectional view of Figure 3. Figure 5 is a cross-sectional view taken along line B_B of Figure 3. ^ 6 is the flow of the decompression drying device according to the present invention. Section i. a~(9) is a section for explaining the state transition of the vacuum drying apparatus according to the present invention, and is used to explain the change of the state of the decompression and drying of the present invention according to the present invention. The part of the structure of the refractory light is displayed as a plan view showing the structure of the above-mentioned photoresist coating apparatus. ^ Show the gas supply system in the morphological photoresist coating unit - a structural diagram. The exhaust system of the morphological photoresist coating unit is configured. A partial cross-sectional view of the interior of the chamber in the surface-coating photoresist coating unit is a vertical section of the W-line of FIG. 5 when the first mode is selected by the airflow control unit, and the airflow control unit is used. When the second mode is selected, the vertical longitudinal section of the W line of Fig. 5 is about the longitudinal section of the 图 line of Fig. 5 when the first mode is selected by the airflow control unit, and the flow line is controlled by the flow control mode. Reduced surface (four) (four) paste parts and airflow status == 繊 繊 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ In the vacuum drying process, a top view of each part in the case where the inert gas is supplied to the chamber in the second mode is selected in the vacuum drying process. A Shijiu is a longitudinal section showing the state of airflow in each county by the inert gas purge at the end of the vacuum drying process. f 21A shows a longitudinal section of the embodiment in which the block construction platform and the lift pin are used. Another longitudinal cross-sectional view of the ί 21B system which is constructed and functioned without using the block structure platform and the lift pin embodiment. Fig. 22A is a plan view showing the configuration of an apparatus for providing an exhaust port under a platform. Fig. 22B is a longitudinal sectional view showing the configuration of an apparatus for providing an exhaust port under a platform. Figure 23 is a cross-sectional view showing a schematic configuration of a conventional reduced-pressure drying unit. [Main component symbol description] 9, 51, 124, 224... lower chamber 13, 134... exhaust port Μ, 152... exhaust pipe 15, 148, 248... vacuum pump 20... block member 26, 132." Air supply port 5...Decompression drying device 51...Exhaust device 52, 126, 226... Upper chamber 54... Fixed binding plate 76... Brother 2 partition plate 100... Coating device 110, 210... Support table 27 201124689 112 212... photoresist coating unit 114, 214... decompression drying unit 116.. guide 118, 218... transport arm 120.. gate 122.. nozzle 124a... housing groove 124b ... chamber inner wall 128.. upper chamber moving mechanism 130, 230... platform 136.. inactive gas supply unit 142.. air supply pipe 160, 161... square member 162.. side bar member 162a...ends 164,194...lifting device 200.. photoresist coating device (coating device) 204.. lifting mechanism 206, 234(1), 234(2), 234(3) 234(4)··. Exhaust gas 224(1), 224(3)... Chamber wall portions 224(2), 224(4)... Side wall (chamber wall) 228.. Chamber opening and closing Mechanism 231.. Lifting pins 232 (1), 232 (2), 232 (3), 232 (4) ... gas supply 242 (1), 242 (2), 242 (3), 242 ( 4)...Gas supply pipes 244(1), 244(2), 244(3), 244(4)...Flow adjustment valve 236...Inactive gas storage tank 238.. blower 240.. Inactive gas supply source 28 201124689 246(1), 246(2), 246(3), 246(4), 254(1), 254(2), 254(3), 254(4)... Opening and closing valve 250...pressure Control valves 252(1), 252(2), 252(3), 252(4)..·Gas exhaust pipe (exhaust pipe) 260.. Airflow control unit 262A, 262B...1st partition Plate 264...first lifting mechanism 265A, 265B, 280···recess 266A, 266B, 282... support bars 268, 284... horizontal support plates 270, 286, 292... lifting drive shafts 272, 288, 294, 295... lifting actuators 274, 290, 296... sealing member 276a... first flat plate portions 276b, 276c... second flat plate portion 276.. second partition plate 278... second lifting Mechanism G. .. substrate yang]...1st area [EJ...2nd area H. · Distance interval (gap) R...Photoresist S1~S8...Step 29