JP2006105524A - Vacuum dryer and vacuum drying method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum dryer and a vacuum drying method capable of rapidly drying a thin film formed on a main surface of a substrate without causing bumping. <P>SOLUTION: A support pin 21 is raised with a support plate 22 to minimize the distance between the main surface of the substrate W and the upper surface 14 of a chamber 10, and evacuation is performed in a small displacement in this state. Therefore, the support pin 21 is lowered with the support plate 22 to increase the distance between the main surface of the substrate W and the upper surface 14 of the chamber 10, and evacuation is performed in a large displacement in this state. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a vacuum drying apparatus and a vacuum drying method.

For example, Patent Document 1 discloses a vacuum drying apparatus for drying a thin film such as a photoresist applied to a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display panel, or a mask substrate for a semiconductor manufacturing apparatus under reduced pressure. In the reduced-pressure drying apparatus described in Patent Document 1, the inside of the chamber into which the substrate is loaded is decompressed by a vacuum pump, thereby promoting the evaporation of the solvent that is the center of the resist solution component and quickly drying the photoresist. I am doing so. When the photoresist is dried using such a reduced pressure drying apparatus, it is possible to prevent the influence of external factors such as wind and heat, and to dry the photoresist evenly.
JP-A-7-283108

  When such a vacuum drying apparatus is used, a phenomenon called bumping may occur immediately after the vacuum drying process is started. This is a phenomenon that occurs when the solvent component in the photoresist applied to the substrate surface suddenly evaporates and suddenly boils. When such bumping occurs, a phenomenon called small bubbles is formed on the surface of the photoresist called defoaming, and the substrate cannot be used.

  For this reason, in the initial stage of the reduced-pressure drying process, it is necessary to exhaust air at a lower speed than in the chamber to prevent the occurrence of defoaming. Therefore, there is a problem that it takes a long time to dry the photoresist.

  The present invention has been made to solve the above problems, and provides a vacuum drying apparatus and a vacuum drying method capable of quickly drying a thin film formed on a main surface of a substrate without causing bumping. With the goal.

  The invention according to claim 1 is a vacuum drying apparatus for drying a thin film formed on a main surface of a substrate under reduced pressure, and a chamber that covers the periphery of the substrate and a support that horizontally supports the substrate with the main surface facing upward. A member, an elevating unit for elevating and lowering the support member, an exhaust port formed at a position not facing the main surface of the substrate supported by the support unit in the chamber, an exhaust unit for exhausting air through the exhaust port, And an exhaust amount control means for controlling the exhaust amount by at least two steps, the support member supporting the substrate is raised by the elevating means, and the exhaust is performed while the distance between the main surface of the substrate and the upper surface of the chamber is reduced. After exhausting with a small amount of exhaust by the control means, the support member supporting the substrate is lowered by the elevating means, and the exhaust control means is used with the distance between the main surface of the substrate and the upper surface of the chamber being increased. And performing exhaust a large amount of exhaust amount.

  According to a second aspect of the present invention, in the first aspect of the present invention, the exhaust port is formed on the bottom surface of the chamber.

  According to a third aspect of the present invention, there is provided a vacuum drying apparatus for vacuum drying a thin film formed on a main surface of a substrate, and a chamber for covering the periphery of the substrate and a support for horizontally supporting the substrate with the main surface facing upward. A member, a plate-like member disposed at a position facing the main surface of the substrate supported by the support member, an elevating means for raising and lowering the plate-like member, and the plate-like member on the opposite side of the substrate. An exhaust port provided, an exhaust unit that exhausts air through the exhaust port, and an exhaust amount control unit that controls the exhaust amount of the exhaust unit in at least two stages. In a state where the distance between the main surface of the substrate and the plate-like member is reduced, after exhausting with a small amount of exhaust by the exhaust control means, the plate-like member is raised by the lifting means, and the main surface of the substrate and the plate-like member are With a large distance, the exhaust control means And performing the exhaust in the air amount.

  According to a fourth aspect of the present invention, there is provided a vacuum drying apparatus for drying a thin film formed on a main surface of a substrate under reduced pressure, a chamber covering the periphery of the substrate, and a support for horizontally supporting the substrate with the main surface facing upward. An exhaust port formed at a position not facing the main surface of the substrate supported by the member and the support unit in the chamber; an exhaust unit that exhausts air through the exhaust port; and an exhaust amount by the exhaust unit in at least two stages An exhaust volume control means for controlling, and at a position facing the main surface of the substrate supported by the support member in the chamber, is located farthest from the main surface of the substrate at the center of the main surface of the substrate, and is at the end of the main surface of the substrate A recess having a shape approaching the main surface of the substrate is formed as it approaches the edge, and after exhausting with a small amount of exhaust by the exhaust control means, exhaust is performed with a large amount of exhaust.

  According to a fifth aspect of the present invention, in the fourth aspect of the present invention, the exhaust port is formed on the bottom surface of the chamber.

  According to a sixth aspect of the present invention, there is provided a vacuum drying method for drying a thin film formed on a main surface of a substrate under reduced pressure, a loading step of loading the substrate into a chamber and placing the substrate on a support member, and a main surface of the substrate A first drying step of exhausting with a small amount of exhaust from an exhaust port formed at a position not facing the main surface of the substrate supported by the support means in the chamber in a state where the distance between the surface and the upper surface of the chamber is reduced; And a second drying step of exhausting with a larger amount of exhaust from the exhaust port in a state where the distance between the main surface of the substrate and the upper surface of the chamber is increased.

  According to a seventh aspect of the present invention, there is provided a vacuum drying method for drying a thin film formed on a main surface of a substrate under reduced pressure, wherein the substrate is carried into a chamber, and the main surface of the substrate is disposed in the chamber. A loading step of placing the substrate on the support member in a state of facing the member, and a state in which the distance between the main surface of the substrate and the plate-like member is reduced, and the plate-like member is disposed on the opposite side of the substrate. The first drying step for exhausting with a small amount of exhaust from the exhaust port, and the second drying step for exhausting with a large amount of exhaust from the exhaust port in a state where the distance between the main surface of the substrate and the plate member is increased. It is characterized by providing.

  The invention according to claim 8 is a vacuum drying method for drying a thin film formed on a main surface of a substrate under reduced pressure, and is most separated from the main surface of the substrate at a central portion of the main surface of the substrate, and is at the edge of the main surface of the substrate. A loading step of loading the substrate into a chamber having an upper surface in which a concave portion having a shape approaching the principal surface of the substrate is formed and placing the substrate on the support member; and a principal surface of the substrate supported by the supporting means in the chamber A first drying step for exhausting with a small amount of exhaust from an exhaust port formed at a position not opposite to the exhaust port, and a second drying step for exhausting with a large amount of exhaust from the exhaust port. .

  According to the first to eighth aspects of the invention, the thin film formed on the main surface of the substrate can be quickly dried without causing bumping.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 to 3 are schematic views of a vacuum drying apparatus according to the first embodiment of the present invention.

  The vacuum drying apparatus includes a chamber 10 including a lid portion 11, a packing 12, and a base portion 13, and a support plate 22 on which support pins 21 that support the substrate W are erected. The substrate W is supported by the support pins 21 in the chamber 10 in a horizontal posture with its main surface facing upward.

  An exhaust port 31 is formed in the base portion 13 of the chamber 10. The exhaust port 31 is connected to a vacuum pump 34 by a pipe line 32. A damper 33 capable of controlling the exhaust amount from the exhaust port 31 in two stages is disposed between the exhaust port 31 and the vacuum pump 34. An exhaust fan or the like may be used instead of the vacuum pump 34. Further, a variable flow valve or the like may be used instead of the damper 33.

  The support plate 22 is connected to the lifting mechanism 25 via a support bar 24. The support pin 21, together with the support plate 22, by the action of the elevating mechanism 25, the transfer position of the substrate W between the transfer arm (not shown), the first and second drying positions having different heights, and It is possible to move up and down between the three height positions.

  Next, a drying operation for drying the thin film formed on the main surface of the substrate by the reduced pressure drying apparatus will be described. 4 and 5 are flowcharts showing the drying operation by the vacuum drying apparatus according to the first embodiment of the present invention.

  When drying the thin film formed on the main surface of the substrate W, first, as shown in FIG. 1, the lid portion 11 in the chamber 10 is raised by a lifting mechanism (not shown) to open the chamber 10 (step S11). ). Next, a transfer arm (not shown) that supports the substrate W enters the chamber 10 (step S12).

  Next, by driving the elevating mechanism 25, the support pins 21 are raised together with the support plate 22 to the delivery position of the substrate W shown in FIG. 1 (step S13). As a result, the substrate W supported by the transport arm is supported by the support pins 21. Then, the transfer arm leaves the chamber 10 (step S14).

  Next, by driving the elevating mechanism 25, the support pins 21 are lowered together with the support plate 22 to the first drying position shown in FIG. 2 (step S15). Then, as shown in FIG. 2, the lid portion 11 in the chamber 10 is lowered by an elevator mechanism (not shown) to close the chamber 10 (step S16). In this state, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is small.

  In this state, the vacuum pump 34 and the damper 33 act to exhaust with a small amount of exhaust (step S17). At this time, in this vacuum drying apparatus, an exhaust port 31 is formed at the bottom of the chamber 10. For this reason, when exhaust is performed from the exhaust port 31, an air flow from the center toward the edge is generated on the main surface of the substrate W.

  Instead of forming the exhaust port 31 at the bottom of the chamber 10, it may be disposed at another position such as the side surface of the chamber 10 that does not face the main surface of the substrate W supported by the support pins 21. Further, in this embodiment, the exhaust port 31 is disposed at a position below the support plate 22. For this reason, if the support plate 22 is brought too close to the exhaust port 31, the exhaust operation from the exhaust port 31 is hindered. If it is necessary to bring the support plate 22 and the exhaust port 31 close to reduce the size of the apparatus, the exhaust port 31 may be formed outside the support plate 22 in plan view.

  In the state shown in FIG. 2, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set small. This is because, when this distance is large, a phenomenon called bumping occurs due to an active drying operation immediately after the vacuum drying process is started. When the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set small, such an active drying operation can be prevented, and the occurrence of defoaming due to bumping can be prevented. Can do.

  At this time, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is preferably 15 mm or less, and particularly preferably 2 mm to 10 mm.

  As described above, when the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set to be small and vacuum drying is performed with a small amount of exhaust, the center of the main surface of the substrate W is from the center. Appropriate reduced-pressure drying can be performed in a state in which defoaming due to bumping is prevented by a gentle air flow toward the edge. However, the thin film portion at the center of the main surface of the substrate W cannot be sufficiently dried.

  When a certain time has elapsed since the first drying step described above has been started (step S18), exhaust is performed with a large exhaust amount by the action of the vacuum pump 34 and the damper 33 (step S19). At this time, a relatively large air flow is generated on the main surface of the substrate W from the center toward the edge. And by the drive of the raising / lowering mechanism 25, the support pin 21 falls to the 2nd drying position shown in FIG. 3 with the support plate 22 (step S20).

  As described above, when the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set to be large and vacuum drying is performed with a large amount of displacement, Drying takes place quickly. However, since the thin film is dried to some extent in the first drying step described above, defoaming due to bumping does not occur.

  At this time, the distance between the main surface of the substrate W and the upper surface 14 of the lid 11 in the chamber 10 is preferably 20 mm or more and 50 mm or less. Since this distance is restricted by the volume in the chamber 10, that is, the amount of the atmosphere to be evacuated, it is not preferable to set the distance larger than 50 mm.

  In the above-described second drying process, if the degree of vacuum in the chamber 10 reaches a preset value by a sensor (not shown) (step S21), the chamber is purged with nitrogen gas (step S22). And if the inside of the chamber 10 becomes atmospheric pressure, the cover part 11 in the chamber 10 will be raised by the raising / lowering mechanism which is not shown in figure, and the chamber 10 will be open | released (step S23). Next, by driving the elevating mechanism 25, the support pins 21 are raised together with the support plate 22 to the delivery position of the substrate W shown in FIG. 1 (step S24).

  In this state, a transfer arm (not shown) enters the chamber 10 (step S25). And by the drive of the raising / lowering mechanism 25, the support pin 21 falls to the 1st drying position shown in FIG. 2 with the support plate 22 (step S26). As a result, the substrate W supported by the support pins 21 is supported by the transport arm. Then, the transfer arm that supports the substrate W leaves the chamber 10 (step S27).

  FIG. 6 is an explanatory diagram showing changes in the degree of vacuum in the chamber 10 during the above-described reduced-pressure drying operation.

  In this figure, the vertical axis represents time (seconds), and the vertical axis represents the degree of vacuum (Torr) in logarithm. Region A shows the first drying step described above, region B second drying step, and region C shows a purge step with nitrogen gas. Moreover, the code | symbol P has shown atmospheric pressure.

  As described above, according to the vacuum drying apparatus in the first embodiment of the present invention, after exhausting with a small exhaust amount in a state where the distance between the main surface of the substrate W and the upper surface 14 of the chamber 10 is reduced, Since the exhaust is performed with a large amount of exhaust while the distance between the main surface of the substrate W and the upper surface 14 of the chamber 10 is increased, the thin film formed on the main surface of the substrate W is quickly dried without causing bumping. It becomes possible.

  Next, another embodiment of the present invention will be described. FIG. 7 is a schematic view of a vacuum drying apparatus according to the second embodiment of the present invention.

  In the vacuum drying apparatus according to the first embodiment described above, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is changed by moving the substrate W up and down, and the exhaust port 35 is formed at the bottom of the chamber 10. On the other hand, in the second embodiment, the distance between the main surface of the substrate W and the plate member 41 is changed by moving the plate member 41 disposed in the chamber 10 up and down, and the exhaust port 31 is formed on the upper surface 14 of the chamber 10. About another structure, it is the same as that of 1st Embodiment mentioned above.

  In the second embodiment, the plate-like member 41 is connected to the cylinder rods 42 of the pair of air cylinders 43 and is configured to move up and down by driving the pair of air cylinders 43. Also in the second embodiment, when exhaust is performed from the exhaust port 35 formed in the upper surface 14 of the chamber 10, an air flow from the center toward the edge is generated on the main surface of the substrate W. .

  Next, a drying operation for drying the thin film formed on the main surface of the substrate by the reduced pressure drying apparatus according to the second embodiment will be described. 8 and 9 are flowcharts showing the drying operation by the reduced pressure drying apparatus according to the second embodiment of the present invention. In addition, the description is simplified about the part similar to 1st Embodiment mentioned above.

  First, the lid portion 11 in the chamber 10 is raised by an elevator mechanism (not shown) to open the chamber 10 (step S31). Next, a transfer arm (not shown) that supports the substrate W enters the chamber 10 (step S32).

  Next, by driving the elevating mechanism 25, the support pins 21 rise to the delivery position of the substrate W together with the support plate 22 (step S33). As a result, the substrate W supported by the transport arm is supported by the support pins 21. Then, the transfer arm leaves the chamber 10 (step S34).

  Next, by driving the elevating mechanism 25, the support pins 21 are lowered together with the support plate 22 to the drying position shown in FIG. 7 (step S35). Then, as shown in FIG. 7, the lid portion 11 in the chamber 10 is lowered by an elevator mechanism (not shown) to close the chamber 10 (step S36). In this state, the distance between the main surface of the substrate W and the plate-like member 41 is small.

  In this state, the vacuum pump 34 and the damper 33 act to exhaust with a small amount of exhaust (step S37). At this time, in this vacuum drying apparatus, an exhaust port 35 is formed in the upper surface 14 of the chamber 10. For this reason, when exhaust is performed from the exhaust port 35, an air flow from the center toward the edge is generated on the main surface of the substrate W.

  In the state shown in FIG. 7, the distance between the main surface of the substrate W and the plate-like member 41 is set small. For this reason, generation | occurrence | production of the defoaming by bumping can be prevented similarly to the case of 1st Embodiment.

  As described above, when the distance between the main surface of the substrate W and the plate-like member 41 is set small and drying under reduced pressure is performed with a small amount of exhaust air, the distance from the center to the edge of the main surface of the substrate W is moderate. With a simple air flow, it is possible to perform appropriate reduced-pressure drying in a state where defoaming due to bumping is prevented. However, the thin film portion at the center of the main surface of the substrate W cannot be sufficiently dried.

  When a certain time has elapsed since the first drying step described above has been started (step S38), exhaust is performed with a large exhaust amount by the action of the vacuum pump 34 and the damper 33 (step S39). At this time, a relatively large air flow is generated on the main surface of the substrate W from the center toward the edge. And the plate-shaped member 41 raises by the drive of a pair of air cylinder 43 (step S40).

  In this way, when the distance between the main surface of the substrate W and the plate-like member 41 is set to be large and the reduced-pressure drying is performed with a large amount of exhaust, the main substrate of the substrate W is the same as in the first embodiment. Drying takes place quickly over the entire surface. However, since the thin film is dried to some extent in the first drying step described above, defoaming due to bumping does not occur.

  In the second drying step described above, if the degree of vacuum in the chamber 10 reaches a preset value by a sensor (not shown) (step S41), the chamber is purged with nitrogen gas (step S42). And if the inside of the chamber 10 becomes atmospheric pressure, the cover part 11 in the chamber 10 will be raised by the raising / lowering mechanism which is not shown in figure, and the chamber 10 will be open | released (step S43). Next, by driving the elevating mechanism 25, the support pins 21 rise to the delivery position of the substrate W together with the support plate 22 (step S44).

  In this state, a transfer arm (not shown) enters the chamber 10 (step S45). And by the drive of the raising / lowering mechanism 25, the support pin 21 falls to a dry position with the support plate 22 (step S46). As a result, the substrate W supported by the support pins 21 is supported by the transport arm. Then, the transfer arm that supports the substrate W moves out of the chamber 10 (step S47).

  As described above, according to the vacuum drying apparatus of the second embodiment of the present invention, after exhausting with a small exhaust amount in a state where the distance between the main surface of the substrate W and the plate-like member 41 is reduced, the substrate Since the exhaust is performed with a large amount of exhaust while the distance between the main surface of W and the plate-like member 41 is increased, it is formed on the main surface of the substrate W without causing bumping as in the case of the first embodiment. It is possible to quickly dry the thin film.

  Note that the distance between the main surface of the substrate W and the plate-like member 41 in the second embodiment is the same as the distance between the main surface of the substrate W in the first embodiment and the upper surface 14 of the lid portion 11 in the chamber 10 described above. Can be set to

  Next, still another embodiment of the present invention will be described. FIG. 10 is a schematic view of a vacuum drying apparatus according to the third embodiment of the present invention.

  In the vacuum drying apparatus according to the first embodiment described above, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is changed by moving the substrate W up and down. In the embodiment, instead of changing the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10, it faces the main surface of the substrate W supported by the support pins 21 in the lid portion 11 of the chamber 10. A concave portion 15 having a shape that is farthest from the main surface of the substrate W at the center of the main surface of the substrate W and approaches the main surface of the substrate W as it approaches the edge of the main surface of the substrate W is formed. About another structure, it is the same as that of 1st Embodiment mentioned above.

  Next, a drying operation for drying the thin film formed on the main surface of the substrate by the reduced pressure drying apparatus according to the third embodiment will be described. 11 and 12 are flowcharts showing the drying operation by the reduced pressure drying apparatus according to the third embodiment of the present invention. In addition, the description is simplified about the part similar to 1st Embodiment mentioned above.

  First, the lid portion 11 in the chamber 10 is raised by a lifting mechanism (not shown) to open the chamber 10 (step S51). Next, a transfer arm (not shown) that supports the substrate W enters the chamber 10 (step S52).

  Next, by driving the elevating mechanism 25, the support pin 21 is moved up to the delivery position of the substrate W together with the support plate 22 (step S53). As a result, the substrate W supported by the transport arm is supported by the support pins 21. Then, the transfer arm leaves the chamber 10 (step S54).

  Next, by driving the elevating mechanism 25, the support pin 21 is lowered to the dry position together with the support plate 22 (step S55). Then, the lid portion 11 in the chamber 10 is lowered by an elevator mechanism (not shown), and the chamber 10 is closed (step S56).

  In this state, the vacuum pump 34 and the damper 33 act to exhaust with a small amount of exhaust (step S57). At this time, in this vacuum drying apparatus, an exhaust port 31 is formed at the bottom of the chamber 10. For this reason, when exhaust is performed from the exhaust port 31, an air flow from the center toward the edge is generated on the main surface of the substrate W.

  In this state, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set to be relatively small. This is because, when this distance is large, a phenomenon called bumping occurs due to an active drying operation immediately after the vacuum drying process is started. When the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set small, such an active drying operation can be prevented, and the occurrence of defoaming due to bumping can be prevented. Can do.

  As described above, when the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set to be small and vacuum drying is performed with a small amount of exhaust, the center of the main surface of the substrate W is from the center. Appropriate reduced-pressure drying can be performed in a state in which defoaming due to bumping is prevented by a gentle air flow toward the edge. In this embodiment, the center of the main surface of the substrate W is farthest from the main surface of the substrate W at a position facing the main surface of the substrate W supported by the support pins 21 in the lid portion 11 of the chamber 10. A recess 15 having a shape approaching the main surface of the substrate W is formed as it approaches the edge of the main surface of the substrate W. Therefore, drying is also promoted for the thin film portion at the center of the main surface of the substrate W.

  If a predetermined time has elapsed since the first drying step described above has been started (step S58), exhaust is performed with a large exhaust amount by the action of the vacuum pump 34 and the damper 33 (step S59). At this time, a relatively large air flow is generated on the main surface of the substrate W from the center toward the edge.

  As described above, when the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is set to be large and vacuum drying is performed with a large amount of displacement, Drying takes place quickly. In particular, in this embodiment, rapid drying is performed even in the vicinity of the center of the substrate W where drying is not normally promoted by the action of the recess 15 formed in the lid portion 11 of the chamber 10. At this time, since the thin film is dried to some extent in the first drying step described above, defoaming due to bumping does not occur.

  In this third embodiment, the distance between the main surface of the substrate W and the upper surface 14 of the lid portion 11 in the chamber 10 is preferably 10 mm to 20 mm at the central portion of the substrate W having the largest value, and is the smallest. In the vicinity of the edge of the substrate W taking a value, it is preferably 2 mm to 10 mm.

  In the above-described second drying process, when the degree of vacuum in the chamber 10 reaches a preset value by a sensor (not shown) (step S60), the chamber is purged with nitrogen gas (step S61). And if the inside of the chamber 10 becomes atmospheric pressure, the cover part 11 in the chamber 10 will be raised by the raising / lowering mechanism which is not shown in figure, and the chamber 10 will be open | released (step S62). Next, by driving the elevating mechanism 25, the support pins 21 rise to the delivery position of the substrate W together with the support plate 22 (step S63).

  In this state, a transfer arm (not shown) enters the chamber 10 (step 64). And by the drive of the raising / lowering mechanism 25, the support pin 21 falls to a dry position with the support plate 22 (step S65). As a result, the substrate W supported by the support pins 21 is supported by the transport arm. Then, the transfer arm that supports the substrate W leaves from the chamber 10 (step S66).

  As described above, according to the reduced pressure drying apparatus in the third embodiment of the present invention, the concave portion 15 formed in the lid portion 11 of the chamber 10 is formed on the main surface of the substrate W without causing bumping. The thin film can be quickly dried.

1 is a schematic diagram of a vacuum drying apparatus according to a first embodiment of the present invention. 1 is a schematic diagram of a vacuum drying apparatus according to a first embodiment of the present invention. 1 is a schematic diagram of a vacuum drying apparatus according to a first embodiment of the present invention. It is a flowchart which shows the drying operation | movement by the reduced pressure drying apparatus which concerns on 1st Embodiment of this invention. It is a flowchart which shows the drying operation | movement by the reduced pressure drying apparatus which concerns on 1st Embodiment of this invention. It is explanatory drawing which shows the change of the vacuum degree in the chamber 10 at the time of pressure reduction drying operation. It is a schematic diagram of the reduced pressure drying apparatus which concerns on 2nd Embodiment of this invention. It is a flowchart which shows the drying operation | movement by the reduced pressure drying apparatus which concerns on 2nd Embodiment of this invention. It is a flowchart which shows the drying operation | movement by the reduced pressure drying apparatus which concerns on 2nd Embodiment of this invention. It is a schematic diagram of the reduced pressure drying apparatus which concerns on 3rd Embodiment of this invention. It is a flowchart which shows the drying operation | movement by the reduced pressure drying apparatus which concerns on 3rd Embodiment of this invention. It is a flowchart which shows the drying operation | movement by the reduced pressure drying apparatus which concerns on 3rd Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Chamber 11 Cover part 12 Packing 13 Base 14 Upper surface 15 Recessed part 21 Support pin 22 Support plate 31 Exhaust port 32 Pipe line 33 Damper 34 Vacuum pump 41 Plate-like member 43 Air cylinder W Substrate

Claims (8)

In a vacuum drying apparatus for vacuum drying a thin film formed on a main surface of a substrate,
A chamber covering the periphery of the substrate;
A support member that horizontally supports the substrate with its main surface facing upward,
Elevating means for elevating the support member;
An exhaust port formed at a position not facing the main surface of the substrate supported by the support means in the chamber;
An exhaust means for exhausting air through the exhaust port;
An exhaust amount control means for controlling the exhaust amount by the exhaust means in at least two stages,
The support member supporting the substrate is lifted by the lifting and lowering means, and after the exhaust control means exhausts with a small amount of exhaust with the distance between the main surface of the substrate and the upper surface of the chamber being reduced, the lifting and lowering is performed. The support member that supports the substrate by means is lowered, and the exhaust control means exhausts with a large amount of exhaust while the distance between the main surface of the substrate and the upper surface of the chamber is increased. apparatus. The vacuum drying apparatus according to claim 1,
The exhaust port is a vacuum drying apparatus formed on the bottom surface of the chamber. In a vacuum drying apparatus for vacuum drying a thin film formed on a main surface of a substrate,
A chamber covering the periphery of the substrate;
A support member that horizontally supports the substrate with its main surface facing upward,
A plate-like member disposed at a position facing the main surface of the substrate supported by the support member;
Elevating means for elevating the plate-like member;
An exhaust port disposed on the opposite side to the substrate with respect to the plate-shaped member;
An exhaust means for exhausting air through the exhaust port;
An exhaust amount control means for controlling the exhaust amount by the exhaust means in at least two stages,
After the plate member is lowered by the elevating means and the distance between the main surface of the substrate and the plate member is reduced, the exhaust control means exhausts with a small amount of exhaust, and then the elevating means A vacuum drying apparatus characterized in that exhaust is performed with a large exhaust amount by the exhaust control means in a state where the plate member is raised and the distance between the main surface of the substrate and the plate member is increased. In a vacuum drying apparatus for vacuum drying a thin film formed on a main surface of a substrate,
A chamber covering the periphery of the substrate;
A support member that horizontally supports the substrate with its main surface facing upward,
An exhaust port formed at a position not facing the main surface of the substrate supported by the support means in the chamber;
An exhaust means for exhausting air through the exhaust port;
An exhaust amount control means for controlling the exhaust amount by the exhaust means in at least two stages,
In the chamber, the position facing the main surface of the substrate supported by the support member is farthest from the main surface of the substrate at the center of the main surface of the substrate, and as the substrate approaches the edge of the main surface of the substrate. A concave portion in the shape close to the main surface is formed,
A vacuum drying apparatus characterized in that after exhausting with a small amount of exhaust by the exhaust control means, exhausting with a large amount of exhaust. The reduced-pressure drying apparatus according to claim 4,
The exhaust port is a vacuum drying apparatus formed on the bottom surface of the chamber. In a vacuum drying method for vacuum drying a thin film formed on a main surface of a substrate,
A loading step of loading the substrate into the chamber and placing it on the support member;
Exhaust with a small amount of exhaust from an exhaust port formed at a position not opposed to the main surface of the substrate supported by the support means in the chamber in a state where the distance between the main surface of the substrate and the upper surface of the chamber is reduced. Performing a first drying step;
A second drying step of exhausting a large amount of exhaust from the exhaust port in a state where the distance between the main surface of the substrate and the upper surface of the chamber is increased;
A reduced-pressure drying method comprising: In a vacuum drying method for vacuum drying a thin film formed on a main surface of a substrate,
A loading step of loading the substrate into the chamber and placing the substrate on the support member in a state where the main surface of the substrate is opposed to the plate-like member disposed in the chamber;
A first drying step of exhausting air with a small amount of exhaust from an exhaust port disposed on the opposite side of the plate-like member from the substrate in a state where the distance between the main surface of the substrate and the plate-like member is reduced. When,
A second drying step of exhausting a large amount of exhaust from the exhaust port in a state where the distance between the main surface of the substrate and the plate-like member is increased;
A reduced-pressure drying method comprising: In a vacuum drying method for vacuum drying a thin film formed on a main surface of a substrate,
The substrate is carried into a chamber having an upper surface in which a concave portion having a shape that is farthest from the main surface of the substrate at the center of the main surface of the substrate and is closer to the main surface edge of the substrate is formed. And a carrying-in process of placing on the support member;
A first drying step of exhausting with a small amount of exhaust from an exhaust port formed at a position not facing the main surface of the substrate supported by the support means in the chamber;
A second drying step for exhausting with a large exhaust amount from the exhaust port;
A reduced-pressure drying method comprising:

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