TW201121065A - Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. - Google Patents
Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. Download PDFInfo
- Publication number
- TW201121065A TW201121065A TW098142586A TW98142586A TW201121065A TW 201121065 A TW201121065 A TW 201121065A TW 098142586 A TW098142586 A TW 098142586A TW 98142586 A TW98142586 A TW 98142586A TW 201121065 A TW201121065 A TW 201121065A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- type
- film
- microcrystalline
- solar cell
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201121065A true TW201121065A (en) | 2011-06-16 |
| TWI408821B TWI408821B (enExample) | 2013-09-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098142586A TW201121065A (en) | 2009-12-11 | 2009-12-11 | Thin-film solar cells containing nanocrystalline silicon and microcrystalline silicon. |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201121065A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8557041B1 (en) | 2012-04-20 | 2013-10-15 | Industrial Technology Research Institute | Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells |
| TWI475703B (zh) * | 2011-12-27 | 2015-03-01 | Nexpower Technology Corp | 薄膜太陽能電池 |
| TWI482296B (zh) * | 2011-07-27 | 2015-04-21 | Univ Nat Sun Yat Sen | 具奈米抗反射層之太陽能電池構造 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI557425B (zh) * | 2015-11-24 | 2016-11-11 | 財團法人金屬工業研究發展中心 | 具抗反射導電膜之光電結構 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080271675A1 (en) * | 2007-05-01 | 2008-11-06 | Applied Materials, Inc. | Method of forming thin film solar cells |
| TW200945598A (en) * | 2008-04-24 | 2009-11-01 | Contrel Technology Co Ltd | Structure and process of a silicon-based thin film solar-cell with multijunction structure |
-
2009
- 2009-12-11 TW TW098142586A patent/TW201121065A/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI482296B (zh) * | 2011-07-27 | 2015-04-21 | Univ Nat Sun Yat Sen | 具奈米抗反射層之太陽能電池構造 |
| TWI475703B (zh) * | 2011-12-27 | 2015-03-01 | Nexpower Technology Corp | 薄膜太陽能電池 |
| US8557041B1 (en) | 2012-04-20 | 2013-10-15 | Industrial Technology Research Institute | Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI408821B (enExample) | 2013-09-11 |
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| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |