TW201113551A - Conductive optical device, production method therefor, touch panel device, display device, and liquid crystal display apparatus - Google Patents

Abstract

A conductive optical device includes a base member and a transparent conductive film formed on the base member. A surface structure of the transparent conductive film includes a plurality of convex portions having antireflective properties and arranged at a pitch equal to or smaller than a wavelength of visible light.

Description

201113551 6. The invention relates to: a conductive optical device, a manufacturing method thereof, a touch panel, a display device and a liquid crystal display device, and more particularly, a transparent A conductive layer is formed on one of its major surfaces - a conductive optical device. In the case of the relevant application, the Japanese patent application JP 2009-299004 filed on Sep. 2, 2009, filed on Sep. 2, 2009, filed on Sep. 2, 2009, filed on December 28, 2009 The entire contents of these applications are hereby incorporated by reference. [Prior Art] In recent years, a resistive film type touch panel for inputting information is attached to a display device such as a liquid crystal display device mounted on one of a mobile device, a cellular phone, and the like. The sinuous resistive film type touch φ plate has a structure in which two transparent conductive films are provided opposite to each other via a spacer, and (iv) a spacer is formed of an insulating material such as a bupropion resin. The transparent conductive film is used as an electrode of the touch panel and comprises a base material having a transparency, such as a polymer film, and a transparent conductive layer formed on the base material and having a high One material having a refractive index (for example, about 19 to 21) is formed, such as ITO (Indium Tin Oxide). The transparent conductive film used for the resistive film deposition panel needs to have a desired surface resistance value of, for example, about 300 Ω/□ to 500 Ω/□. In addition, the transmissive conductive film needs to have a high rust Xa X transmittance to avoid the display quality of one of the display devices (such as a liquid crystal display device) to which the resistive touch panel is attached 150653.doc 201113551 Deterioration. The transparent conductive layer constituting the transparent conductive film needs to be as thick as, for example, about 20 nm to 3 Å for the surface resistance value. Then, if the transparent conductive layer formed of a material having a high refractive index becomes thick, one of the external light is reflected at an interface between the conductive layer and the base material, and the transparent conductive The film-transmittance is lowered, thus causing a problem of deterioration in quality of one of the display devices. In order to solve this problem, for example, Japanese Patent Application Laid-Open No. Hei. No. 2-136625 (hereinafter referred to as Patent Document) discloses a transparent conductive film for a touch panel, and an anti-reflection film is provided for - Between the base material and the transparent conductive layer, the anti-reflective film is formed by sequentially laminating a plurality of dielectric films having different refractive indices. [Invention] However, in the transparent conductive film of the patent document The reflection function of one of the antireflection films has a wavelength dependence, thereby causing a wavelength dispersion in one transmittance of the transparent conductive film, thereby making it difficult to achieve a high transmittance in a wide wavelength range. Therefore, it is required to have excellent An anti-reflective property, a conductive optical device, a manufacturing method thereof, a touch panel, a display device, and a liquid crystal display device. In an embodiment, a conductive optical device includes a base member and is formed on the base member a transparent conductive film. One surface structure of the transparent conductive film includes a plurality of convex portions, which have anti-reflective properties and are equal to or I50653.doc -4- 20111 3551 is spaced apart from one of the wavelengths of visible light. In one embodiment, 'a touch panel device includes a first conductive substrate layer' and a second conductive substrate layer opposite the first conductive substrate layer. In one example, at least one of the first conductive base layer and the second conductive base layer comprises a base member and a transparent conductive film formed on the base member, and a surface structure of the transparent conductive film includes a plurality of convexities a structure, which has anti-reflective properties and is disposed at a pitch equal to or less than one wavelength of visible light. In another embodiment, a display device includes a display device and a touch panel device attached to the display device The touch panel device includes a first conductive substrate layer and a second conductive substrate layer opposite to the first conductive substrate layer. At least one of the first conductive substrate layer and the second conductive substrate layer comprises a a base member and a transparent conductive film formed on the base member. The surface structure of the transparent conductive film includes a plurality of convex structures, which have anti-reflective properties and are equal to A spacing configuration that is less than one of the wavelengths of visible light. In one embodiment, a method of fabricating a gated electrical device includes forming a base member comprising one of a plurality of convex structures, and forming a transparent layer on the base member The conductive film is transferred to make the surface of one of the transparent conductive films of the hexagrams contain a plurality of convex portions corresponding to the base member, and the convex structure has an anti-convex structure. Reflective in nature and in a stem, stomach, and or less than a visible configuration. In only one embodiment, a transparent conductive film is provided, the surface structure comprising anti-reflective properties and having a surface junction equal to or less than It can be seen that a plurality of convex portions of one of the wavelengths of one of the wavelengths of the light are formed. When the structures form a square lattice pattern or a quasi-square Ba 4 on the surface of the substrate. In the case of a pattern, desirably, the structures have an elliptical pyramid shape or an elliptical frustum shape having a long axis direction in the direction in which the trace extends and one of the central portions of the shape is inclined They are steeper than the one end portion and the bottom portion. In the case of this configuration, the anti-reflection and transmission characteristics can be improved. When the structures form a square lattice pattern or a quasi-square lattice pattern on the surface of the substrate, desirably, each of the structures is in the -45 degree direction relative to the traces or approximately 45 The height or depth in the direction of the dimension is less than the height or depth of each of the structures in the direction of the rows of the traces. When this relationship is not satisfied, it is necessary to elongate the arrangement pitch in the 45-degree direction or the approximately 45-degree direction with respect to the traces. Therefore, a fill rate of the structures in the 45 degree direction or approximately 45 degrees with respect to the traces is reduced. Reducing the filling ratio as described above results in deterioration of anti-reflection characteristics. As described above, according to the embodiments, one of the conductive optical devices having excellent anti-reflection characteristics can be realized. Additional features and advantages are set forth herein and will be apparent from the following detailed description and drawings. [Embodiment] Hereinafter, embodiments will be described in the following order with reference to the drawings. 1] The first embodiment (where the structure is linearly and two-dimensionally arranged in a hexagonal lattice pattern: see Fig. 1) 150653.doc • 6 - 201113551 2 · Second embodiment (where the structure is linearly And an example of being configured as a square lattice pattern in two dimensions: see FIG. 1 5) 3. The third embodiment (in which the structure is arranged in two dimensions as an arc and a hexagonal lattice pattern: see FIG. 18) ' 4 _ Fourth embodiment (in which the structure is arranged in a meandering manner: see Fig. 21) 5_Fifth embodiment (example in which the convex structure is arranged on the surface of the substrate: see Fig. 22) 6. Sixth implementation Example (Example in which the refractive index curve is S-shaped: see FIG. 24) 7 - Seventh embodiment (an example in which the structure is formed on two main surfaces of the conductive optical device: see FIG. 29) 8. Eighth embodiment (Example in which a structure having transparent conductivity is disposed on a transparent conductive layer: see FIG. 3A) 9. Ninth Embodiment (Application example of a resistive film type touch panel: see FIG. 31) 10. Tenth implementation Example (wherein the hard coat layer is formed on the touch surface of the touch panel) Example: See Fig. 32). U. Eleventh Embodiment (Example in which a polarizer or a front panel is formed on a touch surface of a touch panel: see Fig. 33) 12 · Tenth - Example (where structure An example of a configuration at the peripheral portion of the touch panel: see Figure 34) 1 3 _ Twelfth Example (Example of Internal Touch Panel: See Figure 3) Fourteenth Embodiment (About Resistive Touch Application example of the panel: see Fig. 36) 150653.doc 201113551 <1. First embodiment: > (Structure of conductive optical device) Fig. 1A shows a structure of a conductive optical device 1 according to the first embodiment One of the examples is a schematic plan view. Fig. 1B is a partially enlarged plan view showing one of the electroconductive optical devices shown in Fig. 1A. Figure 1C is a cross-sectional view of one of the traces T1, T3, ... of Figure 1B. Figure 1D is a cross-sectional view of the traces T2, T4, - of Figure 1B. Figure 1 is a schematic diagram showing one of the modulated waveforms of the laser light used to form a latent image corresponding to one of the traces T1, Τ3, . Figure 1F is a diagram showing one of the modulated waveforms of laser light used to form a latent image corresponding to one of the traces T2, T4, ... of Figure 1B. 2 and 4 to 6 are each a partially enlarged perspective view of the non-conductive optical device j of Fig. 1A. Figure 3A is a cross-sectional view of the non-conductive optical device i of Figure 1A in a direction in which the trace extends (χ direction (hereinafter, also referred to as the trace direction). Figure 3B is a cross-sectional view of the conductive optical element 1 shown in Figure i A in one direction. The conductive optical device 1 includes a substrate 2 including a main surface opposite to each other, and a plurality of convex portions disposed on one of the main surfaces for suppressing a reflection to be equal to or smaller than a light wavelength. Structure 3 and a transparent conductive layer 4 formed on structure 3. Further, in order to reduce a surface resistance, it is desirable to additionally provide a metal film (conductive film) 5 between the structure 3 and the transparent conductive layer 4. The conductive optical device has a function of preventing light which has been transmitted through the substrate 2 in the z direction of Fig. 2 from being reflected at an interface between the structure 3 and the ambient air. Hereinafter, the substrate 2, the structure 3, the transparent conductive layer 4, and the metal film 5 included in the conductive optical device 4 will be described in order. 150653.doc 201113551 One aspect ratio of structure 3 (height H / average arrangement pitch p) is desirably 〇 or greater and 1.78 or less, more desirably 〇 2 or more and 128 or less, into - The step is desirably 0.63 or more or less. The average film thickness of the transparent conductive layer 4 is desirably 9 nm or more and 5 Å or less. If the aspect ratio of the structure 3 falls below 〇2 and the average film thickness of the transparent conductive layer* exceeds 50 nm, since the concave portion between the adjacent structures 3 is filled with the transparent conductive layer 4, the anti-reflection property and transmission are obtained. The characteristics tend to deteriorate. On the other hand, if the aspect ratio of the structure 3 exceeds L78 and the average film thickness of the transparent conductive layer 4 falls below 9 nm, the slope of one of the structures 3 becomes steep and the average of the transparent conductive layer 4 is averaged. The film thickness is thinned, so the surface resistance tends to increase. In other words, by making the aspect ratio and the average film thickness satisfy the above numerical range, excellent anti-reflection characteristics and transmission characteristics as well as a wide range of surface resistance (for example, 1 〇〇Ω/□ or more can be obtained). And 5 〇〇〇 Ω / □ or less). Here, the average film thickness of the transparent conductive layer 4 is an average film thickness of the transparent conductive layer 4 at one of the apex portions of the structure 3. When the average film thickness of the transparent conductive layer 4 at one of the apex portions of the structure 3 is represented by Dml, the average film thickness of the transparent conductive layer 4 at one of the slopes of the structure 3 is represented by Dm2 and the transparent conductive layer 4 is between adjacent structures. When the average film thickness is represented by Dm3, it is desirable to satisfy one of the relationships of D1 > D3 > D2. The average film thickness 〇1112 at the slope of the structure 3 is desirably 9 nm or more and 3 Å nm or less. By satisfying the above relationship of the average film thicknesses Dmi, 〇1, and Dm3 of the transparent conductive layer 4 and making the average film thickness of the transparent conductive layer 4 satisfy the above numerical range, excellent anti-reflection characteristics and transmission characteristics and a wide range can be obtained. A surface resistance. It should be noted that whether or not the average film thicknesses D i, 150653.doc 201113551 and Dm3 satisfy the above relationship can be confirmed by obtaining each of the average film thicknesses 1^1, Dm2, and Dm3 as will be described later. Desirably, the transparent conductive layer 4 has a surface formed along the shape of the structure 3 and the average film thickness Dml of the transparent conductive layer 4 at the apex portion of the structure 3 is 5 nm or more and 8 nm or less. . It should be noted that the average film thickness D(7) of the transparent conductive layer 4 at the apex portion of the structure 3 is substantially the same as the thickness of a plate-shaped conversion film. The thickness of the plate-like conversion film is a film thickness obtained when a transparent conductive layer 4 is formed on a board under the same conditions as the transparent conductive layer 4 is formed on the structures. In order to obtain excellent 柷 reflection characteristics and transmission characteristics and a wide range of surface resistance, the average film thickness DU at the apex portion of the structure 3 is desirably 25 meters or more and 5 Å nanometers or less. The average film thickness Dm2 at the slope of the structure 3 is desirably 9 nm or more and 3 Å nm or less, and the average film thickness Dm3 between the field adjacent structures is desirably 9 nm or more and 50 nanometers or less. Fig. 57 is a view for explaining one of the methods for obtaining the average thicknesses Dm i, Dm2 and DJ of the transparent conductive layers formed on the respective structures as the convex portions. Hereinafter, the method of obtaining the average film thicknesses Dml, Dm2 and Dm3 will be explained. First, the conductive optical device 1 is cut at 31, the line extending direction i to include a apex of 4 knives, and a section thereof is photographed by TEM. Next, the film thickness D1 of the transparent conductive layer 4 at the apex portion of the structure 3 was measured from the taken TEM photograph. Then, the film thickness μ at the position of the '冓3 half-(H/2) is measured in several positions on the slope of the structure 3. Subsequently, the measurement is between 150653.doc 201113551 between the structures The film thickness D3 at a position where the depth of the concave portion becomes the largest one of the positions of the concave portion. Then, the film thickness is repeatedly measured at one point randomly selected from the conductive optical device 1) 1), D2 & D3, and only the measured values D1, D2 and D3 are averaged (arithmetic mean) to obtain an average film thickness Dml, Dm2 & Dm3. The surface resistance of the transparent conductive layer 4 is desirably 1 〇〇 Ω / mouth Or larger and 5 〇〇〇 Ω / port or smaller, more desirably 27 〇 Ω / □ or more and sen (9) □ or less. By setting the surface resistance within this range, the conductive optical device 1 can be used as one of the upper or lower electrodes of various types of touch panels. Here, the surface resistance of the transparent layer 4 is obtained by four-terminal measurement (still κ 7). The average pitch P is desirably (10) nanometer or more and 350 millimeters or more. It is preferably 100 nanometers or more and 320 nanometers.戋Small's step-by-step is desirably 11G nanometer or larger and kanami or smaller. If the configuration pitch drops below 18 meters, the manufacturing structure tends to become difficult. '#Configure the pitch more than (four) nanometer, it tends to be diffracted by one of the visible light. "Structure 3 one height (the depth of the positive is desirably nano or larger and 32 〇 nanometer or smaller, more desirably Half a further desirably 110 is too "2 or greater and 320 nm or less, 28G nano or more. If the structure 3 is reduced to less than 7 〇, half, 广, _, Then, the reflectance tends to increase. If the degree of the structure 3 exceeds 320 nm, it is difficult. The pre-amplifier tends to become trapped (substrate) 150653.doc 201113551 For example, the substrate 2 has a transparency. A transparent substrate. An example of the material of the substrate 2 includes a plastic material having a transparency and a material containing the glass as a main component, but is not limited thereto. For example, the following may be used as the glass: soda lime glass, Lead glass, hard glass, quartz glass and liquid crystal glass (see Japan Chemical Association) , page 537, "Introduction to the Chemistry Handbook". # Various optical properties such as transparency, refractive index and scattering, and various properties such as impact resistance, heat resistance and durability are expected as plastic materials: Acrylic resin, such as a copolymer of polymethyl methacrylate, decyl methacrylate with another alkyl acrylate or vinyl monomer (such as styrene); polycarbonate resin, such as polycarbonate and Glycol _ bis-allyl carbonate (CR_39); a heat curable (fluorenyl) acrylate resin, such as a homopolymer and a copolymer of (brominated) bisphenol A di(meth) acrylate, and (Bromide) polymers and copolymers of bisphenol A mono (meth) acrylate amine phthalate modified monomers; polyesters (especially polyethylene terephthalate, polyethylene naphthalate B Diester and unsaturated polyester), acrylonitrile-styrene copolymer, polyvinyl chloride, polyamine phthalic acid ruthenium, epoxy resin, aromatic polyester, polyether sulfone, polyether ketone, cycloolefin polymerization (product name: ARTON, ZEONOR®). Further, an aromatic polyamide resin can also be used for a heat resistance. When a plastic material is used as the substrate 2, an undercoat layer can be provided as a surface treatment for additionally improving the surface energy, a coating property, a sliding property, the flatness and the like of a plastic surface. For example, an organic alkoxy metal compound, a polyester, an acrylic modified polyester, and a polyurethane may be used as the undercoat layer. Further, in order to obtain the same effect as in the case of providing the undercoat layer 150653.doc -12·201113551, a corona discharge and a uv irradiation treatment can be performed on the surface of the substrate 2. When the substrate 2 is a plastic film, the substrate 2 can be obtained by stretching the above resin or diluting the resin in a solvent, forming the film into a film, and drying the film. Further, for example, one of the substrates 2 has a thickness of about 25 μηι to 500 μπι. Examples of the configuration of the substrate 2 include the shape of one piece, one plate, and one piece, but are not particularly limited thereto. The sheet used herein comprises a film. Desirably, the configuration of the substrate 2 is suitably configured based on one of the portions of the optical device (e.g., camera) having a predetermined anti-reflection function. (Structure) On the surface of the substrate 2, a large number of convex structures 3 are arranged. The structure is contiguously and in two dimensions arranged at a spacing equal to or less than one of the wavelength bands of light to suppress -reflecting, e.g., one of the same level as the wavelength of visible light. This arrangement spacing of S ′ refers to the arrangement pitch ρβρ2. The wavelength band used to suppress a reflected light is one wavelength band of ultraviolet light, visible light, or infrared light. Here, the wavelength band of ultraviolet light refers to (7) to the length of 36 〇 nanometer long band, the wavelength band of visible light refers to one wavelength band of 3 60 nm to please nanometer and the wavelength band of infrared light refers to 83G nanometer to i _ - wavelength band. Specifically, the arrangement pitch is desirably 18 G nanometers or more and 35 () nanometers or less, more desirably 190 nm or more and 280 nm or less. If the arrangement pitch drop f 丨 is lower than 18 G nm, the manufacture of the structure 3 tends to become difficult. On the other hand, if the arrangement pitch exceeds 35 nanometers, one of visible light diffraction tends to occur. 150653.doc -13 - 201113551 The structure 3 of the conductive optics i is configured to form a plurality of traces _, T2, T3, ... (hereinafter also referred to collectively as "trace Τ") on the surface of the substrate 2. In this case, the trace refers to one of the columns in which the structural spectrum is synthesized. Further, the column direction means that the forming surface of the substrate 2 is perpendicular to one of the direction in which the trace extends (X direction). Structure 3 is configured such that the structure 3 of two adjacent traces τ is offset by a half distance. Specifically, across the two field adjacent traces, the structures 3 of one trace (eg, Τ1) are respectively disposed at intermediate positions in the structure 3 disposed in another trace (eg, τ2) (each biased) Move halfway to the position). Thus, as shown in FIG. 1A, structure 3 is configured to form a hexagonal lattice pattern or quasi-position in which the center of structure 3 is positioned at points ai to a? across three adjacent traces (T1 to Τ3), respectively. Six-sided lattice pattern. In the first embodiment, the hexagonal lattice pattern refers to a regular hexagonal lattice pattern, and the quasi-hexagon lattice pattern refers to a pattern different from the regular hexagonal lattice pattern and stretched and deformed in the direction of the trace extension (X direction). The hexagonal lattice pattern. When the structure 3 is configured to form a quasi-hexagonal lattice pattern, the arrangement spacing 1 > 1 of the structure 3 in the same trace (e.g., T1) (in terms of the distance from & 2) is conjunctly longer than the structure 3 The arrangement pitch across two adjacent traces (eg, τ 丨 and Τ 2), that is, the arrangement pitch Ρ 2 of the structure 3 in one of the ± θ directions with respect to the direction in which the trace extends as shown in FIG. 1A (eg, al The distance from a7 and the distance between a2 and a7). By configuring the structure 3 in this way, it is possible to additionally increase the packing density of one of the structures 3. In view of formability, desirably, the structure 3 has a pyramid shape or stretches or contracts one of the pyramid shapes in the direction of the trace. Desirably, Structure 3 150653.doc •14- 201113551 has an axisymmetric pyramid shape or stretches or contracts in the direction of the trace—the axisymmetric pyramid shape. When the adjacent structures 3 are joined to each other, the structures 3 have a shaft-symmetric gold-shaped shape which is one of the axis-symmetric axes or which is stretched or contracted in the direction of the track, except that it is joined to the lower portion of each other. Examples of the pyramid shape include a pyramid shape, a frustum shape, an elliptical cone shape, and an elliptical frustum shape. Here, in addition to the shape of the cone and the shape of the frustum, the pyramid shape conceptually includes an elliptical cone shape and an elliptical frustum shape as described above. Further, the frustum shape refers to a shape obtained by cutting one of the apex portions of the pyramid shape and the elliptical frustum shape refers to a shape obtained by cutting off one of the apex portions of an elliptical cone. . Desirably, the structure 3 has a pyramid shape including a bottom surface in which the width in the direction in which the trace extends is greater than the width in the direction of the vertical: direction of the money extension. Specifically, desirably, the structure 3 has an elliptical cone shape in which a bottom surface has a -print shape or an i-shape having a major axis and a minor axis and a vertex portion as shown in FIGS. 2 and 4 bending. Alternatively, it is desirable that one of the bottom surfaces has an f-shape or an egg-shaped shape (the shape has a major axis and a minor axis) and the apex is divided into a flat elliptical frustum as shown in FIG. shape. In the case of the configuration described above, the column-direction filling imaginary improved reflection characteristic can be increased 'desirably'. The structure 3 has a steep portion in which the apex portion is steeped and the slope portion is gradually oriented toward the bottom portion. ) - the shape of the pyramid. In addition, in view of the improved reflection characteristic 150653.doc •15-201113551 'sability and transmission characteristics' desirably, the structure 3 has a pyramid in which the inclination of the center portion is steeper than the bottom portion and the apex portion (see Fig. 2) The shape or the pyramid shape in which the apex portion is gentle (see Figure 5). When the structure 3 has an elliptical cone shape or an elliptical frustum shape, desirably, the major axis direction of the bottom surface is parallel to the direction in which the trace extends. Although the structure 3 has the same shape in Fig. 2 and the like, the shape of the crucible is not limited thereto and two or more different shapes may be used for the structure 3 to be formed on the surface of the substrate. Furthermore, the structure 3 can be formed integrally with the substrate 2. Further, as shown in Figs. 2 and 4 to 6, it is desirable to form the protruding portion 6 on a part or the entire circumference of the structure 3. In the case of this structure, even when the filling rate of the material 3 is low, the reflectance can be suppressed to be low. Specifically, each of the protruding portions 6 is provided between her adjacent structures 3, as shown in Figures 2, 4 and 5. Alternatively, the elongated projections may be provided on a portion of the structure 3 or the entire circumference as shown in FIG. For example, 5, each of the elongated projections 6 extends from the apex portion of the structure 3 to the lower port p. As the shape of one of the protruding portions 6, a shape having a shape of a triangular cross section, a shape having a quadrangular cross section, and the like can be used. * The shape in which the big neighbor is 6 is not particularly limited, and may be selected in consideration of formability or the like. Furthermore, the portion or the entire structure 3: the surrounding surface may be roughened to form minute bumps thereon. Specifically, the surface between adjacent structures 3 may be roughened to, for example,

Become a tiny bump. Another _, joint 13⁄4. A ·. Another choice is 'micro holes can be formed on the surface of structure 3, such as the apex part. , '. The structure 3 is not limited to the convex structure 3 shown in the figures and may alternatively be formed by a concave portion formed on the surface of the substrate 2 by the shape 150653.doc • 16-201113551. The height of the structure 3 is not particularly limited and is exemplified by about 42 〇 nanometers, more specifically, 4 丨 5 nm to 421 nm. It should be noted that when the structure 3 is formed of a concave portion, the height of the structure 3 becomes one of the depths of the structure 3. One of the heights of the structure 3 in the direction in which the trace extends is desirably smaller than one of the degrees H2 of the structure 3 in the column direction. In other words, desirably, the heights m and H2 satisfy the relationship of H1 < H2. When the structure 3 is configured to satisfy one of the relations of HpH2, the arrangement pitch p丨 in the direction in which the trace extends is required to be elongated, with the result that the filling rate of the structure 3 in the direction in which the trace extends is lowered. Decreasing the fill rate as described above results in deterioration of the reflection characteristics. It should be noted that the aspect ratio of structure 3 need not be the same, and structure 3 can be constructed to have a certain height distribution (e.g., an aspect ratio in the range of 0.5 to 1 - 46). By thus providing the structure 3 having a height distribution, one wavelength dependency of the reflection characteristics can be suppressed. Therefore, one conductive optical device i having excellent anti-reflection characteristics can be realized. As used herein, the degree of distribution means that the structure 3 is formed on the surface of the substrate 2 at two or more different heights (depths). In other words, the structure 3 having a reference height and the structure 3 having a height different from one of the reference heights are formed on the surface of the substrate 2. For example, a structure 3 having a height different from the reference height is formed cyclically or non-circularly (randomly) on the surface of the substrate 2. For example, the direction of the trace extension and the direction of the column may be a cyclic direction. Desirably, a hem portion 3a is formed at a peripheral portion of each of the structures 3, since it is easily fabricated in a manufacturing process of one of the conductive optical devices from the mold 150653.doc 17-201113551 or the like. Stripping structure 3 becomes possible. The hem portion used herein refers to a portion formed at the bottom of the structure 3, the peripheral portion: a protruding portion. In the peeling property, desirably, the hemming portion & is curved such that a height thereof gradually decreases from the apex portion to the lower portion of the structure 3 = ° It should be noted that the hemming portion 3a may be provided only in the peripheral portion of the structure 3. A portion is '(d)) in the improved peeling property, desirably provided on the entire peripheral portion of the structure 3. Further, when the structure 3 is composed of a concave portion, the folded portion 3a is formed on one of the curved surfaces on the periphery of one of the openings as the concave portion of the structure 3. The height (depth) of the structure 3 is not particularly limited and is based on the wavelength of the light to be transmitted - the range of the appropriate mosquito is (for example, from - nanometer to 28 g nanometer (individually m nanometer to nanometer) Here, the height (depth) of the structure 3 is the height (depth) of the structure 3 in the direction of the trace column. When the height of the structure 3 is less than 1 〇〇 nanometer, the 夂 夂 夂 趋 趋 tend to increase However, when the height of the structure 3 exceeds 280 nm, the securing of the predetermined resistance tends to become difficult. The aspect ratio (height/arrangement pitch) of the structure 3 is desirably at 〇5 to i^, more desirably 0.6. In the range of 0.8. When the aspect ratio is lower than Μ, the reflection (four) and transmission characteristics tend to be inferior, and when the aspect ratio exceeds 146, the peeling characteristics of the structure 3 tend to deteriorate during the manufacturing process of the conductive optical device. As a result, a replica cannot be perfectly reproduced. VIII. In addition, 'there is a modification of the reflective property. Desirably, the aspect ratio of the structure 3 is in the range of 〇.54 to K46. The modified transmission characteristic, desirably, the structure 3 The aspect ratio is in the range of 0.6 to 1.0. It should be noted that 'in this application In the case of the case, the aspect ratio is defined by the following expression (1) 150653.doc 201113551. Aspect ratio = H/P...(1) where 'Η denotes one of the structures south, and P denotes an average configured gate distance (Average cycle) Here, the average arrangement pitch P is defined by the following expression (2). The average configuration pitch Ρ = (Ρ1 + Ρ 2 + Ρ 2) / 3 · .. (2) where ' Ρ 1 indicates the trace One of the extending directions is arranged at a pitch (trace extending direction loop), and Ρ2 is expressed in one direction with respect to the direction in which the trace extends (assuming θ=60°-δ, where δ is desirably, is Okssu.) The spacing is set in one of 3°$δ£6°) (Θ direction loop). In addition, the height of the structure 3 is the height of the lanthanide structure 3 in the column direction. The structure 3 is in the direction of the trace extension (X direction). The height above is less than the width in the direction of the column, and the extent of the structure 3 at a portion other than the portion eight in the direction in which the trace extends is substantially the same as the height in the column direction. Therefore, the intensity of the sub-wavelength structure is represented by the height in the column direction. When the structure 3 is composed of a concave portion, one of the heights of the structure of the structure (1) is deep Η 〇 when the structure 3 is arranged in the same trace, the structure is represented by ρ 且 and the structure 3 is adjacent to When the arrangement pitch between the traces is represented by ρ2, the ratio Ρ1/Ρ2 desirably satisfies the relationship of ! or i 〇〇 <ρι/ρ2^". By setting the numerical range in this way, the filling ratio of the structure 3 each having an elliptical cone shape or an elliptical frustum shape can be increased, and as a result, the antireflection property can be improved. The filling ratio of the structure 3 on the surface of the substrate is 65% or more, desirably 150653.doc •19·201113551 ". °1 is larger' more desirably 86% or more, wherein the calendar as the - two straws is set to be within such ranges, and the anti-reverse can be improved. To increase the fill rate, it is desirable to join the underlying structure 3 under the knife or to deform the structure 3 by adjusting the ellipticity of the bottom surface of the structures. Here, the value. The filling ratio (average filling ratio) of the structure 3 was obtained as follows. First, the surface of one surface of the electro-optical device 1 was photographed in a top view using SEM (Scanning Electron Microscope). Pulling the step back to the dog. Next, the SEM photograph taken randomly selects the early cell 1^ to thereby measure the arrangement pitch pi of the unit cell Uc and a trace pitch Τρ (see Fig. 18). Then, an area s of one of the bottom surfaces of the structure 3 located at the center of the unit cell Uc is measured by image processing. Then, use the measured configuration spacing? 1. The pitch of the trace and the area S of the bottom surface are obtained by the following expression (3). Filling rate = (S (hexagon) / S (unit)) * ι〇〇.. (3) Unit cell area: S (unit) = ρι * 2 Τ ρ The area of the bottom surface of the early intracellular structure: § (six squares ) = 2$ A process of calculating a filling rate as described above is performed for 10 unit cells randomly selected from the taken SEM photographs. Thereafter, only the measured values are averaged (arithmetic mean) to obtain an average rate of filling ratio, and the obtained value is used as the filling ratio of the structure 3 on the surface of the substrate. The filling rate when the structures 3 are overlapped or when a substructure (such as a protruding portion 6) is provided between the structures 3 can be obtained by the following method: using a portion corresponding to 5% of the height of the structure 3 as a threshold The value is used to determine an area 150653.doc -20- 201113551 than 0. Figure 7 above is used to illustrate the method of calculating a fill rate in the case where the boundary of structure 3 is not obvious. When the boundary of the structure 3 is not obvious, the filling rate can be obtained by the following operation: #由—The profile is observed using 5% of the height 匕 of the structure 3 - Part A (= (d/h" 1 00) As a threshold (as shown in Fig. 7), the diameter of one of the structures 3 is converted by the height d. When the bottom table (4) - (4) of the structure 3 is used, the same processing is performed using the long axis and the short axis. A graphical representation of one of the bottom surface configurations when one of the bottom surfaces of the structure 3 changes. The ellipticity of the ovals shown in Figures 8-8 to 81) are 1%, 110%, 12%, respectively. % and 141%. By changing the ellipticity in this way, the filling ratio of the structure 3 on the surface of the substrate can be changed. When the structure 3 forms a quasi-hexagonal lattice pattern, one ellipticity e of the bottom surface of the structure is desirably 100 %<e<l50% or less. This is because, within this range, the filling ratio of the structure 3 can be increased, and excellent anti-reflection characteristics can be obtained. Here, when the bottom surface of the structure is in the trace direction ( One of the diameters in the χ direction is represented by a and is perpendicular to the column direction (Y direction) - the diameter is represented by b, and the ellipses are The rate e is defined by (a/b)*1〇〇. It should be noted that the diameters a and b of the structure 3 are obtained as follows. First, one of the conductive optical devices i is given in a top view using an SEM (Scanning Electron Microscope). The surface is photographed, and a structure 3 is randomly selected from the SEM photograph taken. Next, the diameters of the bottom surface of the extracted structure 3 are measured & b. Then, only the measured values & (Arithmetic median) to obtain the diameters a and b of the structure 3. Fig. 9A shows a configuration example each having a pyramid shape or a frustoconical shape 150653.doc • 21 - 201113551 3. Fig. 9B shows that each has an elliptical cone An example of a configuration of a body shape or an elliptical truncated cone shape structure 3. As shown in Fig. 9A and Fig. 9A, the lower portion of the structure 3 is joined in an overlapping manner. Specifically, the structure 3 The lower portion is partially or integrally joined to the lower portion of the adjacent structure 3. More specifically, it is desirable to engage the lower portion of the structure 3 in the direction of the trace, in the meandering direction, or both. Figure 9Α and 9Β each show that the adjacent field structure 3 By combining the structure 3 in this way, the filling rate of the structure 3 can be increased by the joint structure 3. It is desirable to use one of the optical length lengths in the one-to-refractive index. The maximum value of the wavelength band of the force light or the junction of the 4 knives of J. Therefore, excellent anti-reflection characteristics can be obtained. When each has an elliptical cone shape or an elliptical frustum shape structure 3: part of the figure When joined to each other as shown in Fig. 9B, the twists of the joint portions a, b, and c become smaller in the order of the joint portions & m and c as stated. Specifically, the portion of the same trace adjacent to the structure 3 Superimposed to form a first joint. The trowel a and partially overlap under the adjacent structure 3 between adjacent tracks to form a second joint portion b. An intersecting portion c is formed at an intersection of the first joint portion a and one of the second joint portions. One of the intersecting portions c is located (for example) lower than the positions of the first engaging portion a and the second engaging portion. When the σ knives are joined under the structure 3 each having an elliptical pyramid shape or an elliptical frustum shape, the heights of the first joint portion & second joint portion 6 and the intersecting portion 〇 are in the stated order Become smaller. A ratio of a diameter 2r to a configuration pitch ρι ((2r/pi)*i〇〇) is 85% or more 'desirably 90% or more' more desirably 95% or more. By 150653.doc •22· 201113551 By setting these ranges in this way, the filling rate of the structure 3 can be increased, and the anti-reflection characteristics can be improved. If the ratio ((2r/Pl)* 1〇〇) becomes large and the overlap of the structure 3 becomes too large, the anti-reflection characteristic tends to deteriorate. Therefore, desirably, the upper limit value of the ratio ((2r/Pl)*1〇0) is set such that the structure corresponds to one of the optical path lengths in which a refractive index is considered Portions of 1/4 or less of the maximum value of the wavelength band of light are bonded to each other. Here, the arrangement pitch P 1 is a configuration in which one of the structures 3 is arranged in the track direction, and the diameter 2r is a diameter of one of the bottom surfaces of the structure in the direction of the trace. It should be noted that when the bottom surface of the structure is circular, the diameter 2r becomes a diameter, and when the bottom surface of the structure is oval, the diameter 2r becomes a longest diameter. (Transparent Conductive Layer) Desirably, the transparent conductive layer 4 contains a transparent oxide semiconductor as a main component. Examples of the transparent oxide semiconductor include a binary compound (such as Sn〇2, In〇2, Zn〇, and Cd〇) 'ternary compound (which contains at least one selected from the group consisting of Sn, In, Zn, and Cd) The element acts as a constituent of the binary compound) and a multicomponent (complex) oxide. Examples of the material forming the transparent conductive layer 4 include ΙΤ〇(Ιη2〇3, "ο", Αζ〇 (Αι2〇3,

ZnO: Ming doping oxidation), SZ〇'FT〇 (gas-doped tin oxide), Sn〇〆 tin oxide), GZO (gallium-doped zinc oxide) and IZ〇 (In2〇3, Zn〇: indium oxide Zinc). In their examples, the high reliability and low resistance are desirable. Desirably, the material constituting the transparent conductive layer 4 is in an amorphous-polycrystalline mixed state to improve a conductivity. The transparent conductive layer 4 is formed along the surface of the structure 3, and desirably, the surface configuration of the structure 3 and the transparent conductive layer 4 is almost |5]. This is because the change of one of the refractive index curves due to the formation of the transparent conductive layer 4 can be suppressed, and excellent anti-reflection characteristics and transmission characteristics can be maintained. (Metal film) Desirably, a metal film (conductive film) 5 is formed as a base layer of the transparent conductive layer 4 by reducing a resistance, reducing the thickness of one of the transparent conductive layers 4, and when only by the transparent conductive layer 4 It is possible to compensate for conductivity when the conductivity cannot reach a sufficient value. The film thickness of the metal film 5 is not particularly limited and, by way of example, Q may be set to about several nanometers. Since the metal film $ has high conductivity, a sufficient surface resistance can be obtained by a film thickness of several nanometers. Further, in the case of a film thickness of about several nanometers, there is almost no optical influence such as absorption and reflection of the metal film 5. It is desirable to use a metal material having an electrical conductivity as a material for forming the metal film 5. Examples of such a material include Ag, A, Cu, Ti, Nb, and doped Sie in their materials, considering high conductivity and practical use efficiency, Ag is desirable. Although the surface resistance can be ensured only by the metal film 5, if the metal film 5 is extremely thin, the metal film 5 becomes an island-like structure, and as a result, it becomes difficult to ensure electrical conductivity. In this case, in order to electrically connect the island-shaped metal film 5, it is important to form the transparent conductive layer 4 as an upper layer of the metal film 5. (Structure of the reel mother board) _ shows an example of a structure for manufacturing a reel mother board with - "~ 守 艽 。 。. As shown in Figure 1 ,, a reel mother board has a large number of structures that make it a convex part. 13 The junction substrate 12 has a cylindrical shape or a cylindrical shape at about the same distance as the light (such as the visible wavelength). The substrate 12 has a cylindrical shape or a cylindrical shape. 150653.doc •24·201113551 can be used. Glass is used as one of the materials of the substrate 12, but is not particularly limited thereto. The reel substrate exposure device, which is described later, can be spatially coupled to a two-dimensional pattern 'for each-track--polarity inversion formatter The signal is synchronized with a rotation controller of a recording device to generate a -signal, and the pattern is patterned by CAV at an appropriate feed pitch. Thus, a hexagonal lattice pattern or a quasi-hexagonal lattice pattern can be recorded. By appropriately setting the polarity Inverting one of the frequency of the formatter signal and the rpm of the reel to form a lattice pattern having a uniform spatial frequency in a desired recording area. (Manufacturing method of conductive optical device) Next (9) Figure UU, a method for manufacturing one of the electroconductive optical devices 1 constructed as described above. The manufacturing method package 3 for the electroconductive optical device according to the first embodiment forms a light on the substrate a photoresist deposition step, a use-reel substrate exposure device forming an exposure image on one of the fly-eye patterns on the photoresist layer, and developing the photoresist on the latent image a layer-developing step. The method also includes an etching step of fabricating a reel master using an electric engraving, a copying step of fabricating a replica substrate by ultraviolet curable resin, and depositing a transparent conductive layer a deposition step on the replica substrate. (Structure of Exposure Apparatus) First, referring to Fig. 11, a structure of a reel substrate exposure apparatus used in a fly-eye pattern exposure step will be described. The reel substrate exposure apparatus is based on an optical Constructed by a disk recording device. A laser light source 21 is used for exposing a surface of one of the substrates 12 as a light source of one of 150653.doc •25-201113551 The recorded laser light 15 having, for example, one wavelength of 266 nm, λ. The laser light 15 emitted from the laser source 21 travels forward as a parallel beam and enters an electro-optical device (ΕΟΜ·electro-optic modulator) 22. The laser light 15 that has been transmitted through the electro-optic device 22 is reflected by a mirror 23 and directed to a modulation optics system 25. The mirror 23 is comprised of a polarization beam splitter and has a polarization component that is reflected and A function of causing another polarization component to transmit therefrom. The polarization component that has been transmitted through the mirror 23 is received by a photodiode 24, and a light reception signal is used to control the electro-optic device 22 to perform one of the laser light i 5 In the modulation optical system 25, the laser light 15 is collected by an illuminating lens 26 via an illuminating lens 26 (AOM: Acousto-Optical Modulator) 27, which is made of glass (Si 〇 2). form. After the laser light 15 is intensity modulated and propagated by the acousto-optic device 27, a lens 28 causes it to become a parallel beam. The laser light 15 emitted from the modulating optical system 25 is reflected by a mirror 31 and horizontally guided as a parallel beam to a moving optical table 32. The moving optical table 32 includes a beam expander 33 and an objective lens 34. The laser light 15 directed to the moving optical table 32 is shaped by the beam expander 33 into a predetermined beam shape and then irradiated onto the photoresist layer on the substrate 12 via the objective lens 34. The substrate 12 is placed on a turntable 36 that is coupled to a spindle motor 35. Then, while the base 12 is rotated and the laser light 15 is moved in the height direction of the substrate 12, the laser light 15 is intermittently irradiated onto the photoresist layer. Therefore, the photoresist layer exposure step is performed. The formed latent image has an approximately one-shaped shape having a long axis in a circumferential direction, and the laser beam 15 is moved 150653.doc •26·201113551 by the moving optical table 32 by the arrow r Indicates one of the directions - move to execute. The δ-Heil exposure apparatus includes a control mechanism 37 for forming a latent image corresponding to one of the two-dimensional hexagonal lattice or quasi-hexagonal lattice patterns not shown in Fig. 1B on the photoresist layer. The control mechanism 37 includes a formatter 29 and a driver 30. The formatter 29 includes a polarity inversion portion that controls the irradiation of the laser light 15 with respect to one of the far photoresist layers. The driver 3 控制 controls the acousto-optic device 27 after receiving the output of one of the polarity inversion portions. In the reel substrate exposure apparatus, a polarity inversion formatter signal is synchronized with a rotation controller of a recording device for each trace to generate a signal to spatially couple the two-dimensional pattern, and one of the signals The intensity is modulated by the acousto-optic device 27. The hexagonal lattice pattern or the quasi-hexagonal lattice pattern can be recorded by performing patterning at a constant angular velocity (CAV), a suitable jaw, an appropriate modulation frequency, and an appropriate feed pitch. For example, the feed pitch need only be set to 251 nm to set the cycle in the circumferential direction to 315 nm and will be in one of about 6 degrees (about _6 twist directions) with respect to the circumferential direction. One of the loops is set to 3 〇〇 nanometer (Pythagorean theorem), as shown in Figure 〇B. The frequency of the polarity inversion formatted H signal is changed by the scroll (e.g., remuneration, 900 rpm, 45 rpm, and (2) rpm). For example, the frequency of the polarity inversion formatter signal corresponding to the scroll, 900 rpm, 450 rpm, and 225 rpm are 37 7m (10) 5 , 9 · 34 and 4.71 , respectively. - a quasi-hexagonal crystal with a - uniform hook spatial frequency (3 x nanometer cycle in the direction of about 60 degrees with respect to the circumferential direction (about 6 degrees)) in the desired recording area 150653.doc -27- 201113551 The grid pattern is obtained by expanding the beam diameter of one of the far-ultraviolet laser light by a beam expander (BEX) 33 on the moving optical table 32 to 5 times the diameter of the beam, An objective lens 34 of 0.9 NA (numerical aperture) illuminates the laser light onto the photoresist layer on the substrate 12 and forms a microscopic latent image. (Photoresist deposition step) First, as shown in Fig. 12A, a cylindrical substrate 12 is prepared. The substrate 12, for example, is a glass substrate. Next, as shown in Fig. uB, a photoresist layer 4 is formed on one surface of the substrate 12. As the material of the photoresist layer 14, an organic photoresist or an inorganic photoresist can be used. For example, a phenolic photoresist or a chemically amplified photoresist can be used as the organic photoresist. As the inorganic photoresist, for example, a metal oxide composed of one or two or more types of transition metals may be used. (Exposure step) Subsequently, as shown in Fig. 12C, the above-described reel substrate exposure device W light (exposure beam) 15 is irradiated onto the photoresist layer 14 while the substrate 12 is rotated. At this time, by exposing the laser intermittently to simultaneously move the laser light 15 in the direction of the matrix (parallel to the central axis of the cylindrical or cylindrical substrate 丨2), the photoresist layer 14 is exposed. The entire surface. Therefore, the latent image 16 corresponding to one of the trajectories of the laser light 15 is formed on the entire surface of the photoresist (four) 14 at the same distance from the wavelength of visible light. The latent image 16 is configured to form a plurality of column traces on the surface of the substrate and thereby be H, a checkered pattern or a quasi-hexagonal lattice map. Latent image! Each of the six has a shape of a v shape. The shape of the sea has a long axis direction in the direction in which the trace extends. 150653.doc 28-201113551 (Developing Step) Next, a developer is dropped onto the photoresist layer 14 while the substrate 12 is rotated and the photoresist crucible 4 is thus subjected to development processing as shown in Fig. 13A. When the photoresist layer 14 is formed as a positive photoresist as shown in the figure, the dissolution rate with respect to an unexposed portion is at the exposed portion of one of the laser light The result is that the photoresist corresponds to a pattern of one of the latent images (exposed portions) 16. I (etching step) Next, a solid (photoresist pattern) formed on the photoresist layer 14 formed on the substrate 12 is used as a mask to subject the surface of the substrate 12 to a etch process. Illustrated 'can have an elliptical vertebral shape or an elliptical truncated vertebral body shape (which has a long axis direction in the direction of the trace extension: a concave portion (ie, structure 13). For example, the scribe This is performed by dry lithography. At this time, the pattern of the tapered structure 13 can be formed by alternately performing the etching process and the ashing process. Further, it is made to have 3 times or more times the photoresist layer 14 The depth (3 or greater selectivity) of the faceplate and the increase of the aspect ratio of the structure 3. As a dry (four), plasma etching using the _reel (four) device is popular. By performing the steps described above A reel master 11 having a hexagonal lattice pattern or a quasi-hexagonal lattice pattern may be obtained, the 豸 lattice pattern being composed of concave portions each having a depth of about 120 nm to 350 nm. (Copying step) Next , the reel mother board U and the substrate 2 on which the _ transfer (four) is applied (for example) Such as "sheet" close contact with each other, engraving ray irradiation (four) line curing and 150653.doc • 29· 201113551 = a plurality of structures due to ι as a convex portion, as shown in i3c, on one main surface of the two soil plates 2 'And manufacture a conductive optical device 1, such as a can of ultraviolet curable reproduction sheet. (4) printing material from (for example) - ultraviolet curable material and - initiator structure ': according to the inclusion of a filler a functional additive and the like. The external light curable material is composed of, for example, a monofunctional monomer, a bifunctional & monomer, a multifunctional monomer or the like. Specifically, the ultraviolet light The IU material can be obtained by using the above materials alone or by mixing the plurality of materials. Examples of the monofunctional monomer include carboxylic acid (acrylic acid), hydroxy compound (2-hydroxyethyl acrylate) , 2-hydroxypropyl acrylate and 4-hydroxybutyl 6 acrylate), alkyl group, alicyclic compound (isobutyl acrylate, isobutyl acrylate, isooctyl acrylate, lauryl acrylate, acrylic acid) Fatty vinegar, acrylic ice Base ester and cyclohexyl acrylate), other functional monomers (2-methoxyethyl acrylate, methoxyethylene glycol acrylate, 2-ethoxyethyl acrylate, tetrahydrofurfuryl acrylate, Benzyl acrylate, ethyl carbitol acrylate, phenoxyethyl acrylate, hydrazine acrylate, hydrazine decylaminoethyl ester, hydrazine, hydrazine-dimethylaminopropyl acrylamide, hydrazine, hydrazine Dimethyl acrylamide, propylene decylmorpholine, hydrazine-isopropyl acrylamide, hydrazine, hydrazine-diethyl acrylamide, hydrazine-vinyl pyrrolidone, 2-(perfluorooctyl) acrylate Ethyl ester, 3-perfluorohexyl-2-hydroxypropyl acrylate, 3-perfluorooctyl-2-hydroxypropyl acrylate, 2-(perfluorodecyl)ethyl acrylate, 2-(perfluoro-acrylic acid) 3-methylbutyl)ethyl ester), 2,4,6-tribromophenol acrylate, 2,4,6-tribromophenol decyl acrylate, 2-(2,4,6-tribromoacrylate) Phenoxy)ethyl ester) and acrylic acid 150653.doc •30·201113551 2-ethylhexyl ester. Examples of the bifunctional monomer include tris(propylene glycol) diacrylate, trimethylolpropane diaryl ether, and acrylamide urethane. Examples of the multifunctional monomer include trimethylolpropane triacrylate, polyisoprenylpentaacetate, and polydiisopentaerythritol hexaacetate. Examples of the initiator include 2,2·dimethoxydiphenylethane-fluorenone, hydroxycyclohexyl phenyl ketone, and 2-hydroxy-2-mercapto-1-phenylpropanone. For example, inorganic particles or organic particles can be used as a filler. Examples of the inorganic particles include metal oxide particles of Si〇2, Ti〇2, Zr〇2, Sn〇2, Al2〇3, and the like. Examples of the functional additive include a leveling agent, a surface conditioner, and an antifoaming agent. Examples of the material of the substrate 2 include decyl methacrylate (co)polymer, polycarbonate, styrene (co)polymer, decyl methacrylate-stupid ethylene copolymer, cellulose diacetate cellulose triacetate , cellulose acetate butyrate, polyester, polyamine, polyimide, polyether mill, polysulfone, polypropylene, polydecylpentene, polyvinyl chloride, polyvinyl acetal, polyether ketone, poly Urethane and glass. The method of forming a substrate 2 is not particularly limited and may be injection molding, extrusion molding or casting molding. Surface treatment such as corona treatment may be performed on the surface of the substrate as needed. (Metal film deposition step) Next, as shown in Fig. 14A, a metal film is deposited on the uneven surface of the substrate 2 on which the structure 2 has been opened as needed. In addition to one (chemical vapor deposition, two chemical reactions from vapor deposited thin films) (eg 150653.doc -31 · 201113551 thermal CVD, „CVD and optical CVD), the ρν〇 method can be used (physical Vapor deposition: a technique for forming a thin film by accumulating a material that is physically vaporized in a vacuum on a substrate (for example, vacuum vapor deposition, plasma-assisted vapor deposition, sputtering, and ion plating) as a metal film One of the deposition methods. (Conductive film deposition step) Next, as shown in Fig. 14B, a transparent conductive layer is deposited on the substrate: on the uneven surface on which the structure 3 has been formed. For example, The method of depositing a metal film as described above is the same as the method of depositing a transparent conductive layer. According to the first embodiment, one of the conductive optical devices i having a very high transmittance and less reflection can be provided. The anti-reflection function is realized by forming a plurality of structures 3 on the surface, so that one wavelength dependence is low and the angle dependence is lower than that of an optical film type transparent conductive layer. The rate and low cost can be achieved by using a nano-imprint technique and selecting a high-flux film structure without using a multilayer optical film. <2. Second Embodiment> (Structure of Conductive Optical Device) Figure 15 is a schematic plan view showing one structural example of one of the conductive optical devices according to a second embodiment. Figure 15B is a partially enlarged plan view showing one of the conductive optical devices shown in Figure 15A. Figure 15C is a trace T1 of Figure 15B. Figure 1D is a cross-sectional view of one of the traces T2, T4, ... of Figure 15B. Figure 15 is a view showing the formation of a latent image corresponding to the traces d, Τ 3, ... of Figure 5 A schematic diagram of one of the modulated waveforms of the laser light. Figure 150653.doc -32·201113551 bF shows one of the laser light used to form the latent image corresponding to the trace 2, τ4..· of the trace of Fig. 15B. A schematic diagram of one of the waveforms. The conductive optical device 1 of the second embodiment is different from the conductive optical device of the first embodiment in that the structure 3 forms a one-way pattern or a quasi-square lattice across three adjacent traces. Pattern. In the current embodiment, the quasi-square lattice pattern is different A regular square lattice pattern refers to a regular square lattice pattern obtained by extending the regular square lattice pattern in the direction of extension of the trace (X direction). The height or depth of the structure 3 is not a characteristic. Restricted and set, for example, from 1 nanometer to 280 nanometers, desirably in the range of 11 nanometers to 28 nanometers. Here, the height (depth) of structure 3 is 3 in the direction of the trace extension. One of the upper heights (depth). When the height of the structure 3 is lower than 1 〇〇 nanometer, the reflection ratio tends to increase, and when the height of the structure 3 exceeds 280 nm, the securing of a predetermined resistance tends to become difficult. The arrangement pitch P2 in the direction of one of 45 degrees with respect to the traces (about) is, for example, about 200 nm to 300 nm. The aspect ratio (Southness/arrangement spacing) of Structure 3 is desirably within the range of about 5 · 5 4 to 1.13. Further, the aspect ratio of the structure 3 need not be the same, and the structure 3 can be constructed to have a certain height distribution. The arrangement pitch P1 of the structure 3 in the same trace is desirably longer than the arrangement pitch P2 of the structure 3 between two adjacent traces. Further, when the arrangement pitch of the structure 3 in the same trace is represented by P1 and the arrangement pitch of the structure 3 between two adjacent traces is represented by P2, desirably, a ratio P1/P2 satisfies 1.4 &lt; P1 /P2S1.5 one of the relationships. By setting this range of values, it is possible to improve the filling rate of one of the structures 3 150653.doc • 33· 201113551 each having an elliptical vertebral shape or an elliptical truncated vertebral shape, and as a result, the anti-reflection property can be improved. Furthermore, desirably, the dimension or depth of the structure 3 in a direction of 45 degrees or approximately 45 degrees with respect to one of the traces is less than the height or depth of the structure 3 in the direction of the trace extension. The height H2 in the array direction (Θ direction) inclined with respect to the direction in which the trace extends is smaller than the height H1 of the structure 3 in the direction in which the trace extends. In other words, desirably, the heights H1 and H2 satisfy one relationship of H1 &gt; H2. Figure 16 is a diagram showing one of the bottom surface configurations when one of the bottom surfaces of the structure 3 is changed in ellipticity. The rounding rates of the prints 3!, 32 and 3:3 are 1%, 16.3, and 14%, respectively. By changing the ellipticity in this way, the filling rate of the structure 3 on the surface of the substrate can be changed. When the structure 3 forms a square lattice pattern or a quasi-square lattice pattern, one of the bottom surfaces of the structure has a sugar circle ratio of 6 Å, 3⁄4, and a ground system of 50%; £eSl 80%. This is because, within this range, the filling ratio of the structure 3 can be increased and excellent anti-reflection characteristics can be obtained. The filling ratio of the structure 3 on the surface of the substrate is 65 % or more, desirably 73% or more, more desirably 86% or more, wherein ι % is taken as an upper limit. By setting the filling ratio within such ranges, the antireflection characteristics can be improved. Here, the filling ratio (average filling ratio) of the structure 3 is one value obtained as follows. First, the surface of the electro-optical device 1 was photographed in a top view using an SEM (Scanning Electron Microscope). Next, a unit cell Uc was randomly selected from the taken SEM photograph to thereby measure the arrangement pitch ρι of the unit cell Uc and 150653.doc -34 - 201113551 trace pitch ΤΡ (see Fig. 15B). Then, the area s of the bottom surface of any of the four structures 3 in the unit cell Uc is measured by image processing. Then, use the measured configuration pitch P1, trace spacing D? The area S of the bottom surface and the filling ratio are obtained by the following expression (4). Filling rate = (s (square) / S (unit)) * ι〇〇 · ·. (4) Unit cell area: S (unit) = 2 * ((Ρ1*Τρ)*(1/2))=Ρΐ * Area of the bottom surface of the structure of the unit cell: s (square) = s The processing for calculating a filling rate as described above was performed for 10 unit cells randomly selected from the taken SEM photograph. Thereafter, only the measured values are averaged (intraoperative values) to obtain an average rate of the filling rate, and the obtained value is used as the filling ratio of the structure 3 on the surface of the substrate. The ratio of the diameter 2r to the arrangement pitch P1 ((2r/pi) M〇〇) is 64% or more, desirably 69% or more, more desirably 73% or more. By setting their ranges in this way, the filling rate of the structure 3 can be increased, and the anti-reflection characteristics can be improved. Here, configure the spacing? The 1 series structure 3 is arranged in one of the trace directions at a pitch ' and the diameter 2 is a diameter of the bottom surface of the structure in the direction of the trace. It should be noted that when the bottom surface of the structure is circular, the diameter becomes a diameter, and when the bottom surface of the structure is oval, the diameter of the core becomes a longest diameter. (Structure of Reel Motherboard) Fig. Π shows an example of a structure for manufacturing one of the reel mother plates of one of the conductive optical devices having the structure described above. The reel mother board is different from the reel mother board of the first embodiment in that the concave structure 13 forms a square lattice pattern or a quasi-square lattice pattern on the surface. 150653.doc -35- 201113551 using a reel substrate exposure apparatus to spatially couple a two-dimensional pattern, synchronizing a polarity inversion formatter signal with one of the recording devices for each trace to generate a signal and borrow A pattern is patterned by the CAV at an appropriate feed pitch. Therefore, a square lattice pattern or a quasi-square lattice pattern can be recorded. Desirably, by appropriately setting the frequency of one of the polarity inversion formatter signals and one of the reels of the reel 'in the desired recording area of one of the photoresists on the substrate 12, the irradiation laser light is formed to have a uniform One of the spatial frequencies of the lattice pattern. &lt;3. Third Embodiment&gt; (Structure of Conductive Optical Device) Fig. 18A is a schematic plan view showing one structural example of one conductive optical device according to a third embodiment. Figure 8B is a partially enlarged plan view showing one of the conductive optical devices shown in Figure 8A. Figure 18C is a cross-sectional view of one of the traces T1, T3, ... of Figure 18B. Figure 18D is a cross-sectional view of the traces Τ2, τ4, . . . of FIG. 18B. The electrically conductive optical device 1 of the third embodiment is different from the electrically conductive optical device of the first embodiment in that the trace τ is formed in an arc shape and the structure 3 is disposed along the arc. As shown in Fig. 18A, structure 3 is configured to form a quasi-hexagonal pattern in which the centers of structures 3 are respectively located at points & 1 to one across three adjacent traces (Τ1 to Τ3). Here, the quasi-hexagonal lattice pattern refers to a hexagonal lattice pattern which is different from the regular hexagonal lattice pattern and which is stretched and deformed along the arc of the trace τ or refers to a pattern different from the regular hexagonal lattice pattern and extending in the direction of the trace. A hexagonal lattice pattern of stretched and deformed (in the X direction). Since the structure of the conductive optical device 1 other than the above-described structure is the same as that of the first embodiment of the first embodiment, the description thereof will be omitted. (Structure of Disc Motherboard) Figs. 19A and 19B show an example of the structure of one of the disk mother plates for manufacturing one of the conductive optical devices having the above structure. As shown in Figs. 19A and 19B, a disc mother board 41 has a structure in which a large number of structures 43 as concave portions are disposed on one surface of a disc-shaped substrate 42. In one use environment of the conductive optical device 1, the structure 43 is cyclically disposed in two dimensions in a configuration equal to or smaller than one of the wavelength bands of light, e.g., one of the same level as one wavelength of visible light. For example, structure 43 is configured on concentric or helical traces. Since the structure of the disc mother board 41 other than the above-described structure is the same as that of the reel mother board 11 of the first embodiment, the description thereof will be omitted. (Method of Manufacturing Conductive Optical Device) First, referring to Fig. 20, an exposure apparatus for manufacturing a disk mother board 41 having the above-described structure will be explained. The moving optical table 32 includes a beam expander 33, a mirror 38, and an objective lens 34. The laser light 15 guided to the moving optical table 32 is shaped into a predetermined beam shape by the beam expander 33 and then irradiated onto one of the photoresist layers on the disk-shaped substrate 42 via the mirror 38 and the objective lens 34. The substrate 42 is placed on a turntable (not shown) that is coupled to the spindle motor 35. Then, while the substrate 42 is rotated and the laser light 15 is moved in the radial direction of one of the substrates 42, the laser light 15 is intermittently lightly irradiated onto the photoresist layer on the substrate 42. Therefore, the photoresist layer exposure step is performed. The latent image formed has a substantially oval shape having a long axis in the circumferential direction of 150653.doc • 37-201113551. The movement of the laser light 15 is performed by moving the optical table 32 in one of the directions indicated by the arrow R. The exposure apparatus shown in Fig. 20 includes a control mechanism 37 for forming a latent image on a photoresist layer which is one of a two-dimensional hexagonal lattice or quasi-hexagonal lattice pattern shown in Fig. 18B. The control mechanism 37 includes a formatter 29 and a drive 3. The formatter 29 includes a polarity inversion portion that controls the irradiation of the laser light 15 with respect to one of the photoresist layers. The driver 3 controls the acousto-optic device 27 after receiving the output of one of the polarity inverting portions. The control mechanism 37 synchronizes the intensity of one of the laser light 15 by the acousto-optic device 27, the rotational speed of one of the spindle motor 35, and the moving speed of one of the moving optical tables 32 for spatially associating the two-dimensional pattern for each of the traces. Latent image. The substrate 42 is controlled to rotate at a constant angular velocity (CAV). Then, one of the laser frequencies of one of the laser beams 15 by the acousto-optic device "appropriate rpm, one of the substrates 42 of the spindle motor 35", and one of the laser light 15 by the moving optical table 32 Patterning is performed at a proper feed pitch. Therefore, a latent image of one of a hexagonal lattice pattern or a quasi-hexagonal lattice pattern is formed on the photoresist layer. One of the control portions of the inverted portion of the dipole is gradually changed to change the spatial frequency. Evenly (pattern density of latent image ' ρι : 33〇N and Μ: 3〇〇N, Pi: 315nm and p2 : 275nm or ρι : 3〇〇N and P2 : 265奈 More specific And f, performing an exposure while changing the irradiation cycle of the laser light 15 for each trace of the photoresist layer, and performing a frequency modulation of the laser light 15 in the control mechanism 37 to make each trace Ding Zhongzhi P1 becomes approximately 330 nm (or 315 nm, 3 〇〇 nanometer). In other words, 150653.doc -38- 201113551 controls the modulation so that the position of the trace is further away from the disk shape The irradiation cycle in which the center of the substrate 42 moves the laser light becomes shorter and shorter. Therefore, A nano pattern having a uniform spatial frequency may be formed on the entire surface of the substrate. • Hereinafter, an example of a method of manufacturing a conductive optical device according to one of the third embodiments will be explained. The exposure apparatus of the structure manufactures the disk mother board 41 in the same manner as in the first embodiment except for exposing the photoresist layer formed on the disk-shaped substrate. Next, the disk mother board 41 is used. The substrate 2 (for example, an acrylic sheet) to which the ultraviolet curable resin has been applied is in close proximity to each other and irradiated with ultraviolet rays to thereby cure the ultraviolet curable tree, thereby peeling off the substrate 2 from the disc mother substrate 41. Therefore, a disk-shaped optical device in which a plurality of structures 3 are disposed on the surface can be obtained. Next, on one of the concave and convex surfaces of the plurality of structures 3 formed in the optical device, a metal film is deposited as needed. After 5, a transparent conductive layer 4 is deposited. Thus, a disk-shaped conductive optical device i can be obtained. Subsequently, a predetermined shape (for example, a rectangle) is cut from the disk-shaped conductive optical device. Conductive optical device 1. Thus, a desired conductive optical device i is fabricated. According to the third embodiment, one of the south productivity and excellent anti-reflection characteristics can be obtained as in the case where the structure 3 is linearly arranged. Conductive optical device 1. <4_Fourth embodiment> Fig. 21A is a schematic plan view showing one structural example of one of the conductive optical devices according to the fourth embodiment. Fig. 21B shows the conductive light 150653 shown in Fig. 21A. .doc -39- 201113551 A partially enlarged plan view of the device. The conductive optical device 1 of the fourth embodiment is different from the conductive optical device of the first embodiment in that the structure 3 is zigzagly arranged on the trace (hereinafter referred to as 'weighing To swing the trace). Desirably, the wobbles of the traces on the substrate 2 are synchronized. In other words, it is desirable to make the swing a synchronous swing. By thus synchronizing the wobbles, one of the hexagonal lattice or quasi-hexagonal lattice unit states can be maintained and the filling ratio can be kept high. A sinusoid or a triangular wave can be used, for example, as one of the wobble traces. The waveform of the wobble traces is not limited to a loop waveform and may be an acyclic waveform. One of the wobble traces is set to an amplitude of, for example, about ± 1 〇. The structure of the fourth embodiment other than the above-described structure is the same as that of the first embodiment. According to the fourth embodiment, since the structure 3 is disposed on the swing trace, it is possible to suppress an unevenness in appearance. &lt;5. Fifth Embodiment&gt; Fig. 2 2 A shows a schematic plan view of one of structural examples of one of the conductive optical devices according to a fifth embodiment. Figure 22B is a partially enlarged plan view showing one of the electroconductive optical devices shown in Figure 22A. Figure 22C is a cross-sectional view of one of the traces T1, T3, ... of Figure 22B. Figure 22D is a cross-sectional view of traces T2, T4, ... of Figure 22B. Figure 23 is a partially enlarged perspective view of one of the conductive optical devices shown in Figure 22A. The electroconductive optical device of the fifth embodiment is different from the electroconductive optical device of the first embodiment in that a large number of structures 3 are disposed as concave portions on the surface of the substrate. Structure 3 has a concave shape obtained by reversing the convex shape of 150653.doc -40 - 201113551 of structure 3 of the first embodiment. It should be noted that when the structure 3 is formed as a concave portion as described above, the opening 3 (the entrance portion of the concave portion) as the concave portion is defined as the lower portion, and the lowest portion of the structure 3 in the depth direction is defined. (The deepest part of the concave portion) is defined as a vertex portion. In other words, the apex portion and the lower portion are defined by the structure 3 as a non-material space: Further, since the structure 3 is concave in the fifth embodiment, the height of the structure 3 in the expression (1) and the like H becomes one of the depths of structure 3. The structure of the fifth embodiment other than the above-described structure is the same as that of the first embodiment. Since the shape of the convex structure 3 of the first embodiment is reversed in the fifth embodiment, the fifth embodiment has the same effect as the first embodiment. &lt;6. Sixth Embodiment&gt; Fig. 24 is a schematic plan view showing one structural example of one of the electroconductive optical devices according to a sixth embodiment. Figure 24B is a partially enlarged plan view showing one of the electroconductive optical devices shown in Figure 24A. Figure 24C is a cross-sectional view of one of the traces T1, T3, ... of Figure 24B. Figure 24D is a cross-sectional view of traces T2, T4 of Figure 24B. Figure 25 is a partially enlarged perspective view of one of the conductive optical devices shown in Figure 24A. The conductive optical device 1 comprises a substrate 2, a plurality of structures 3 formed on the surface of the substrate 2, and a transparent conductive layer 4 formed on the structure 3. Desirably, a metal ruthenium 5 is additionally provided between the structure 3 and the transparent conductive layer 4 in view of the improved surface resistance. The structures 3 each have a convex portion in the shape of a pyramid. Adjacent knots 150653.doc -41 · 201113551 The lower part of the structure 3 is joined to each other while overlapping each other. In the adjacent structure 3, the structure 3 closest to the neighbor is desirably arranged in the direction of the trace. This is because it is easy to arrange the most adjacent structure 3 at these positions in the manufacturing method to be described later. The conductive optical device 1 has a function of preventing reflection of one of the light entering the surface of the substrate on which the structure 3 is formed. In the following description, two axes perpendicular to one main surface of the substrate 2 will be referred to as a χ axis and a γ axis, respectively, and an axis perpendicular to the main surface of the substrate 2 will be referred to as a z axis. Further, when there is a vacant portion Μ in the structure 3, desirably, a minute embossing configuration is formed on the vacant portions 2a. The reflectance of the conductive optical device 1 can be additionally reduced by providing this minute concave-convex configuration. Fig. 26 shows an example of a refractive index profile of one of the electroconductive optical devices according to the sixth embodiment. As shown in Fig. 26, the effective refractive index of the structure 3 with respect to the depth direction (the -Z direction in Fig. 24A) gradually increases toward the substrate 2 with a _s curve. Specifically, the refractive index curve contains _ an inflection point n. The inflection point N corresponds to the side of the structure 3, π back, and the state. It is made possible by the fact that the effective refractive index is reduced, the reflection is reduced (this is because the boundary becomes inconspicuous for light), and the anti-reflection characteristic of the conductive optical device 1 is improved. Desirably, the change in effective refractive index relative to the depth direction

μ u early - 増 plus. Here, the S curve is a 3-inverse S-curve, that is, a _z curve. Further, desirably, the change in the effective refractive index with respect to the depth direction is steeper than the median value of the slope of the effective refractive index on the vertex portion side of the structure 3 and the substrate side, more desirable, you 丨; Its y I 匕 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Therefore, excellent anti-reflection properties can be obtained. The steepness of the nails is 150653.doc -42- 201113551 For example, the lower part of the structure 3 is joined to a part or the lower part of the machine structure 3. By thus bonding the lower portions of the structures to each other, the change in the effective refractive index of the structure 3 with respect to the depth direction can be smoothed. Therefore, the S-shaped refractive index curve becomes possible. Moreover, by joining portions of the structures to each other, the fill rate of the structures can be increased. It should be noted that in Fig. 24B, the position at which all adjacent structures 3 are joined to each other = the joint portion is indicated by a black dot "*". In particular, the joint portion is formed in all adjacent structures 3, between adjacent structures 3 in the same trace (for example, between a1 and a2) or across structure 3 adjacent to the trace (for example, in a to a7 or A2 to a7). In order to achieve a smooth refractive index curve and to obtain excellent anti-reflection characteristics, it is desirable to form a joint portion in all adjacent structures 3. In order to easily form the joint portions in the subsequent manufacturing method, it is desirable to form joint portions between adjacent structures 3 in the same trace. When the structure 3 is cyclically arranged in a hexagonal lattice pattern or a quasi-hexagonal lattice pattern, the joint portions are joined in one of the directions in which the structures 3 are in the six-fold symmetry. Desirably, the structures 3 are joined such that their lower portions overlap each other. By thus joining the structure 3, an S-shaped refractive index curve can be obtained and the filling rate of the structure 3 can be increased. Desirably, the structures are joined at a portion corresponding to a 1/4 or less of the value of the optical wavelength band in one of the optical path lengths of a refractive index. Therefore, excellent anti-reflection characteristics can be obtained. Desirably, the height of the structure 3 is appropriately set according to one of the wavelength bands of light to be transmitted. Specifically, it is desirable that the height of the structure 3 in a use environment is 150653.doc • 43-201113551 degrees is 5/14 or more of the maximum value of the wavelength band of light and 10/7 or less. When visible light is transmitted through the structure 3, the height of the structure 3 desirably ranges from 1 nanometer to 280 nanometers. Desirably, the aspect ratio (height configuration interval) s of the structure 3 is set to be in the range of 至. 5 to 1 · 4 6 . When the aspect ratio is lower than 〇5, the reflection characteristics and the transmission characteristics tend to deteriorate, and when the aspect ratio exceeds 丨46, the peeling characteristics of the structure 3 tend to deteriorate in the manufacture of the conductive optical device ,, and as a result, A copy cannot be reproduced perfectly. As the material of the structure 3, it contains a UV curable resin (cured by ultraviolet rays), an ionizing radiation curable resin (cured by electron beam) or a heat curable resin (by heat curing) as one of the main components. It is desirable to have a UV curable resin which is cured by ultraviolet rays as one of the main components. Figure 27 is an enlarged cross-sectional view showing an example of the shape of the structure. Desirably, the side surface of the structure 3 is gradually widened toward the substrate 2 in a shape of one of the square roots of the eight curves shown in Fig. 26. In the case of this side surface configuration, excellent anti-reflection characteristics can be obtained and one of the transfer properties of the structure 3 can be improved. One of the apex portions 3t of the structure 3 has a planar shape or a convex shape which is tapered toward one end. When the apex portion of the structure 3 has a planar shape, it is 'desirably' an area ratio of one of the planes of one of the apex portions of the structure to the area S of the unit cell (the whistle decreases as the height of the structure 3 increases). In the case of this structure, the anti-reflection property of the structure 3 can be improved. Here, the unit cell system (for example) a hexagonal lattice or a quasi-hexagonal lattice. The bottom surface-area ratio of the structure (structure The area ratio of the area % of the bottom surface to the area S of the unit cell (Sb/S) is desirably close to the area ratio of the apex portion ^ 150653.doc -44. 201113551. Further, it has a lower refractive index than the structure 3. A low refractive index layer may be formed in the apex portion of the structure 3. By thus forming the low refractive index layer', the reflectance can be lowered. - Desirably, the apex portion of the structure 3 and the side surface of the lower portion are free from the apex portion. 3t to the lower portion (d) have - for the first change point Pa and the second change point Pb in the stated order. Therefore, the effective refractive index of the structure 3 with respect to the -Z direction in the depth direction (f) 24A may have an inflection point. Here, the first change point and the second change point are defined as follows. As shown in FIGS. 28A and 28B, when the side surface of the structure 3 between the apex portion and the lower portion of the stern portion is formed by discontinuously connecting a plurality of smooth curves from the apex portion of the structure 3 to the lower portion 3b thereof, the connection is made. The point becomes a change point. These change points coincide with the inflection point. Although it is not accurate to perform - differentiation at the connection point, as the "limit" - the inflection point is also referred to as the inflection point in this case. When the structure 3 has a curved surface as described above, desirably, the inclination of the structure 3 from the vertex portion 3t to the lower portion is gradually from the first change point Pa, and becomes steep from the second change point pb. When the side surface of the structure 3 between the vertex portion 3t and the lower portion (four) is formed by continuously connecting a plurality of smooth curves (shown in FIG. 4) from the vertex portion 3t of the structure 3 to the lower portion thereof, the definition is changed as follows. point. The intersection of the two intersecting tangent lines at each of the two change points on the side surface of the most sinister structure in a curve (as shown in Fig. 28C) becomes a change point. Desirably, the structure 3 has a step st on its side surface between the apex portion 3t and the lower portion. By providing a step st as such, the refractive index profile described above can be achieved by 150653.doc 45« 201113551. In other words, the effective refractive index of the structure 3 with respect to the depth direction can be gradually increased toward the substrate 2 in a -s curve. An example of the step includes a skew step and a parallel step, but the step is: meaning. When the step st is a slant step, the transferability is made more popular than in the case where the step st is a parallel step. The oblique step refers to a step in which the side surface is not parallel to the surface of the substrate, but is widened from the apex portion of the structure 3 toward the lower portion. The parallel step refers to a step parallel to the surface of the substrate. Here, the step is to set one of the segments by the first change point and the second change point pb described above. It should be noted that the step st does not include a plane of the vertex portion 3t and a curve or plane in the structure. Desirably, the structure 3 has a pyramid shape which is axisymmetric except for being joined to a portion below the adjacent structure 3 or a pyramid shape obtained by extending or contracting the pyramid shape in the direction of the trace in view of formability. Examples of the shape of the pyramid include a cone shape, a frustum shape, an elliptical cone shape, and an elliptical frustum shape. Here, in addition to the pyramid shape and the frustum shape, the pyramid shape conceptually includes an elliptical cone shape and an elliptical frustum shape as described above. Further, the shape of the head cone means that one shape is obtained by cutting off one of the apex portions of the shape of the cone and the elliptical frustum shape is obtained by cutting off one of the apex portions of an elliptical cone. Get one of the shapes. It should be noted that the entire shape of the structure 3 is not limited to the shape and only needs to be one in which the refractive index of the structure 3 with respect to the depth direction is gradually increased toward the substrate 2 by an S-curve. In addition, the pyramid shape includes not only a complete pyramid shape but also the following gold 150653.doc -46- 201113551 Font shape: As described above, the step St is included on the I side and the side surface. A structure having an elliptical cone shape 3 - 〇 to sub-tower structure, and a bottom surface having an imprinted ^ 赤 τ τ y (four) or - egg shape (which has a major axis and a minor axis) and a vertex Partially oriented - the ends are tapered. The structure 3 having a shape in which the bottom surface of the bottom surface σ 具有 has an oval shape or an egg shape (having a long axis and a short axis) and the apex portion is a gentle-pyramid structure. When the structure 3 is formed into an elliptical cone shape or an elliptical frustum shape, it is desirable to form the structure 3 on the surface of the U.S. The long axis direction of the Ρ surface coincides with the direction in which the trace extends (X direction). The cross-sectional area of the structure 3 is changed with respect to the depth direction of the structure 3 to correspond to the refractive index profile described above. Desirably, the cross-sectional area of the structure 3 is singularly increased in the depth direction of the structure 3. Here, the sectional area of the structure 3 means one of a cross section parallel to the surface of the substrate on which the structure 3 is formed: product. Desirably, the cross-sectional area of the structure 3 in the depth direction is varied such that the ratio of one of the cross-sectional areas of the structure 3 at positions having different depths corresponds to an effective refractive index curve corresponding to the positions. The structure 3 having the steps described above is obtained, for example, by using a substrate transfer-configuration as described below. Specifically, one of the substrates formed on one side surface of a structure (concave portion) is manufactured by appropriately adjusting one of the etching treatment and the ashing treatment in the etching step in the fabrication of the base. According to the sixth embodiment, the structures 3 each have a pyramid shape, and the effective refractive index of the structure 3 with respect to the depth direction gradually increases toward the substrate 2 by an S curve. Therefore, a reflection can be reduced because the shape of the structure 3 is not obvious to the light by the shape of the structure 3150653.doc •47·201113551. Therefore, excellent anti-reflection characteristics can be obtained. Especially when the height of the structure 3 is large, excellent anti-reflection characteristics are obtained. Further, since the lower portions of the adjacent structures 3 are joined to each other while being heavy, the filling rate of the structure 3 can be increased and the formability of the structure 3 can be improved. Desirably, the effective refractive index profile of the structure 3 with respect to the depth direction of an 8 curve is varied and the structures are configured into a (quasi) hexagonal lattice pattern or a (quasi) square lattice pattern. Further, desirably, the structure 3 has an axisymmetric structure or a structure in which the axisymmetric structure extends or contracts in the direction of the trace. Furthermore, it is desirable to join adjacent structures 3 in the vicinity of the substrate. In the case of this structure, a high-performance anti-reflection substrate which can be manufactured more easily can be produced. When the conductive optical device 1 is manufactured by a method in which the optical disk substrate manufacturing process and the etching process are combined, one time (exposure time) required for the substrate manufacturing process and the case where the conductive optical device is fabricated by an electron beam exposure The ratio can be significantly shortened. Therefore, the conductive optics can be significantly improved. When the apex portion of the structure 3 is not steep and gentle, the durability of the conductive optical device 1 can be improved. In addition, the peeling characteristics of the structure 3 with respect to the reel mother board 11 can also be improved. When the step of the structure 3 is a stepped step, a transferability can be improved as compared with the case where the step is a parallel step. &lt;7. Seventh Embodiment&gt; Fig. 29 is a cross-sectional view showing one structural example of one conductive optical device according to a seventh embodiment. As shown in FIG. 29, the conductive optical member 1 of the seventh embodiment differs from the conductive optical device of the first embodiment in the main surface of the structure 3 of 150653.doc -48·201113551 (the first main table) - the main surface). The surface, the arrangement pattern of the structure 3, and the other main surface on the other side on which the surface 3 has been formed may be formed according to the desired characteristics (for the two main surfaces of the conductive optical device 1) The aspect ratio and the similar parameters do not need to be the same, and the pattern and aspect ratio are the same. For example, the configuration pattern of the main surface can be aligned with the hexagonal lattice pattern 且' and the configuration pattern of the other main surface can be a quasi-square lattice pattern. Since a plurality of structures 3 are formed on the two main surfaces of the substrate 2 in the seventh embodiment, an anti-reflection function can be imparted to both the light incident surface and the light emitting surface of the conductive optical device. Therefore, it can be additionally improved. &lt;8. Eighth Embodiment&gt; Fig. 30 is a cross-sectional view showing a structural example of a conductive optical device according to an eighth embodiment. As shown in FIG. 30, the conductive optical device i is different from the conductive optical device of the first embodiment in that a transparent conductive layer 8 is formed on the substrate 2 and a large number of structures 3 having a transparent conductivity are formed in the S transparent On one surface of the conductive layer 8. The transparent conductive layer 8 comprises at least one type of material selected from the group consisting of a conductive polymer, a conductive filler, a carbon nanotube, and a conductive powder. A silver based filler can be used, for example, as a conductive filler. An IT powder can be used, for example, as a conductive powder. This eighth embodiment has the same effect as the first embodiment above. &lt;9. Ninth Embodiment&gt; Fig. 3 is a cross-sectional view showing an example of a touch panel according to a ninth embodiment, 150653.doc-49-201113551. This touch panel is a so-called resistive touch panel. An analog-type resistive touch panel or a digital resistor can be used: the touch panel is used as a resistive touch panel. As shown in FIG. 31A, the touch panel 50 as one of the information input devices includes a first conductive base material 51 (which includes information input to one of the touch surfaces (input surface)) and the first conductive substrate. Material 51 is opposite one of the second conductive substrate materials 52. Desirably, the touch panel 50 additionally includes a hard coat layer or an antifouling hard coat layer on one of the touch side surfaces of the first conductive base material 5 . In addition, a front panel may be additionally provided on the touch panel 50 as needed. For example, the touch panel 5A is attached to a display device 54 via a layer of adhesive 53. Examples of the display device include various display devices such as a liquid crystal display, a CRT (cathode ray tube) display, a plasma display (pDp: plasma display panel), an EL (electroluminescence) display, and an SED (surface) Conducted electron emission display). Any one of the conductive optical devices 1 according to the first to sixth embodiments is used as at least one of the first conductive base material 51 and the second conductive base material 52. When any one of the conductive optical devices 1 according to the first to sixth embodiments is used for the first conductive base material 51 and the second conductive base material 52, the conductive optical device 1 of the same embodiment or different embodiments Useful for the electrically conductive substrate materials desirably, forming the structure 3 on at least one of the two opposing surfaces of the first electrically conductive substrate material 51 and the second electrically conductive substrate material 52, or in view of anti-reflective and transmissive properties, Structure 3 is formed on both surfaces. Desirably, a 150653.doc • 50· 201113551 single layer or a plurality of layers of antireflection layer are formed on the touch side surface of the first conductive base material 51 to reduce the reflectance and improve the visibility. (Modified Example) Fig. 3B is a cross-sectional view showing a modified example of the structure of the touch panel according to the ninth embodiment. As shown in Fig. 31B, the electroconductive optical device 1 of the seventh embodiment is used as at least one of a first conductive base material 5'' and a second conductive base material 52. A plurality of structures 3 are formed on at least one of the opposing surfaces of the first conductive base material 51 and the second conductive base material 52. In addition, a plurality of structures 3 are also formed on at least one of the touch side surface of the first conductive base material 51 and the surface of the second conductive base material 52 on the side of the display device 54. In view of anti-reflection characteristics and transmission characteristics, it is desirable to form the structure 3 on both surfaces. Since the conductive optical device 丨 is used as at least one of the first conductive base material 51 and the second conductive base material 52 in the ninth embodiment, one of the touches having excellent anti-reflection characteristics and transmission characteristics can be obtained. Panel 5 〇. Therefore, the visibility of the touch panel 50 can be improved, in particular, the visibility of the touch panel 5 outside. &lt;10. Tenth Embodiment&gt; Fig. 3 2 is a perspective view showing one structural example of a touch panel according to a tenth embodiment. Fig. 32B is a cross-sectional view showing an example of the structure of the touch panel according to the tenth embodiment. The touch panel of this embodiment is different from the touch panel of the ninth embodiment in that a hard coat layer 7 formed on the touch surface is additionally provided. The touch panel 50 includes a first conductive base material 51 (which includes information input 150653.doc -51 - 201113551 to the touch surface (input surface) thereof) and a second conductive base material opposite to the first conductive base material 51 52. The first conductive base material 51 and the second conductive base material 52 are attached to each other via a bonding layer 55 provided between their peripheral portions. An antifouling property is imparted to one surface of the hard coat layer 7 using, for example, an adhesive paste or a tape as the bonding layer 55 ° desirably. The touch panel 50 is attached to the display device 54 via, for example, an adhesive layer 53. For example, an acrylic adhesive, a rubber adhesive, and a bismuth adhesive can be used as the material of the adhesive layer 53 'but in view of a transparent acrylic adhesive. Since the hard coat layer 7 is formed on the touch side surface of the first conductive base material 51 in the tenth embodiment, the abrasion resistance of the touch surface of the touch panel 5 can be improved. &lt; 11. Η - Embodiments&gt; Fig. 3 is a perspective view showing one of the structural examples of one of the touch panels according to a first embodiment. Fig. 33B is a cross-sectional view showing an example of the structure of the touch panel according to the eleventh embodiment. The touch panel 50 of the first embodiment is different from the touch panel of the ninth embodiment in that one of the touch side surfaces attached to the first conductive base material 51 via a bonding layer 60 is additionally provided. Polarizer 58. When the polarizer 58 is provided as described above, a λ/4-phase difference film is desirably used as the substrate 2 of the first conductive base material 51 and the second conductive base material 52. By using the polarizer 58 and the substrate 2 as the λ/4-phase difference film in this way, the reflectance can be reduced and the visibility can be improved. Desirably, a 150653.doc -52·201113551 single layer or eve layer antireflection layer (not shown) is formed on the touch side surface of the first conductive base material 51 to reduce the reflectance and improve the visibility. Further, a front panel (surface member) 59 attached to the touch side surface of the first conductive base material 51 via the bonding layer 61 or the like may be additionally provided. As in the first conductive substrate material 51, a plurality of structures 3 can be formed on at least one of the major surfaces of the front panel 59. Fig. 33 shows an example in which a large number of structures 3 are formed on one of the light incident surfaces of the front panel 59. Further, a glass substrate 56 may be attached to a surface of the second conductive base material 52 on the side attached to one side of the display device 54 or the like via a bonding layer 57 or the like. Desirably, a plurality of structures 3 are also formed on a peripheral portion of at least one of the first conductive base material 51 and the second conductive base material 52 due to the first conductive base material 51 or the second conductive base material 52. The adhesion to the bonding layer 55 can be improved by a certain anchor effect. Further, it is desirable to form a plurality of structures 3 on the surface of the second conductive base material 52 attached to the display device 54 or the like, because the adhesion between the touch panel 50 and the bonding layer 57 can be borrowed. The anchoring effect of the plurality of structures 3 is improved. &lt;12_Twelfth Embodiment&gt; Fig. 34 is a cross-sectional view showing an example of the structure of one of the touch panels according to a twelfth embodiment. The touch panel 5 of the twelfth embodiment is different from the touch panel of the ninth embodiment in that at least one of the first conductive base material 51 and the second conductive base material 52 is at a peripheral portion thereof. It contains a plurality of structures 3. The peripheral portions of the first conductive base material 51 and the second conductive base material 52 each include a wiring layer 150653.doc-53·201113551 71 having a predetermined pattern, an insulating layer 72 covering the wiring layer 71, and At least one of the bonding layers 55 joining the substrate materials. Further, among the main surfaces of the second conductive substrate (4), a large number of dot spacers 73 are formed on the surface opposite to the first conductive substrate material 51. The wiring layer 71 is used to form a -parallel electrode, a transfer circuit (b) circuit or the like and contains a wiring material such as a heat-drying or heat-curable conductive paste as a main component. A silver paste can be used, for example, as a conductive paste. The insulating layer 72 is used to ensure the insulating properties of the wiring layer 71 of each of the base materials and to prevent short circuit, and is formed of an insulating material such as an ultraviolet curable or heat curable insulating paste or a Insulation tape. The bonding layer 55 is used to bond the base materials and contains a binder such as an ultraviolet curable or heat curable adhesive as a main component. The dot spacers 73 serve to ensure a gap between the substrate materials and prevent the substrate materials from coming into contact with each other, and contain ultraviolet curable, heat curable or lithographic dot spacer paste as a main component. Since in the twelfth embodiment, at least one of the first conductive base material Η and the second conductive base material 52 contains a plurality of structures 3' at the peripheral portion, a anchoring effect can be obtained. Therefore, the adhesion of the wiring layer 71, the insulating layer 72, and the bonding layer 55 can be improved. Further, when a large number of structures 3 are formed on the surface of one of the second conductive base materials 52 which are the lower electrodes, the adhesion of the dot spacers 73 can be improved. Further, desirably, a plurality of structures 3 (as shown in FIG. 34) are also formed on the surface of the second conductive base material 52 bonded to the display device 54, because the anchors of the plurality of structures 3 are The effect improves the adhesion between the touch panel 5 and the display 150653.doc • 54· 201113551. &lt;1 3. The thirteenth embodiment&gt; Fig. 35 is a cross-sectional view showing a structural example of a liquid crystal display device according to a thirteenth embodiment. As shown in FIG. 35, the liquid crystal display device 70 of the thirteenth embodiment includes a liquid crystal panel (liquid crystal layer) 71 (which includes first and second main surfaces) formed on the first main surface. A first polarizer 72, a second polarizer 73 formed on the second main surface, and a touch panel 5 disposed between the liquid crystal panel 71 and the first polarizer 72. The touch panel 5 is a touch panel integrated with a liquid crystal display (so-called internal touch panel). A plurality of structures 3 can be formed directly on one surface of the first polarizer 72. When the first polarizer 72 has a protective layer (e.g., a TAC (triacetyl cellulose) film) on the surface, it is desirable to form the plurality of structures 3 directly on the protective layer. By forming the plurality of structures 3 on the first polarizer 72, the liquid crystal display device 7 can be made thinner. (Liquid Crystal Panel) The panel in the - display mode can be used as the liquid crystal panel 71, such as a TM (twisted nematic) mode, -STN (super twisted nematic) mode, a va (vertical alignment) mode, -IPS (plane) Internal switching) Mode _ 〇 cb (optical compensation bi-fold mode + FLC (ferroelectric liquid crystal) mode, _p 阙 polymer dispersed liquid crystal) mode and a PCGH (phase change host and guest) mode. (Polarizer) The polarizer 72 and the second polarizer 73 are bonded to the main surface via the bonding layers 74 and 75 such that their transmission axes become perpendicular to each other. First polarizer &lt;72 and second biased crying 1 field silver merchant 73 only transmits the orthogonality of the incident light I50653.doc -55· 201113551, and absorbs the other polarization component. These polarizers obtained, for example, by disposing an iodine complex or a dichroic dye on a polyvinyl alcohol (PVA) film, may be used as the first polarizer 72 and the first polarizer 73. Desirably, a protective layer, such as TAC (triethyl decyl cellulose), is provided on both surfaces of the first polarizer 72 and the second polarizer 73. (Touch Panel) Any of the touch panels according to the ninth to twelfth embodiments can be used as the touch panel 50. Since the liquid crystal panel 71 and the touch panel 5 are shared by the first polarizer 72 in the eleventh embodiment, the optical characteristics can be improved. &lt;14. Fourteenth Embodiment&gt; Fig. 36A is a cross-sectional view showing a first example of a structure of a touch panel according to a fourteenth embodiment. Fig. 36B is a cross-sectional view showing a second example of the structure of the touch panel according to the fourteenth embodiment. The touch panel 50 of the fourteenth embodiment is a so-called capacitive touch panel, and a plurality of structures 3 are formed on at least one of a surface or an interior thereof. Touch panel 50, for example, is bonded to the display device via adhesive layer 53. (First Structural Example) As shown in Fig. 36A, the touch panel (10) of the first structural example comprises a substrate 2, a transparent conductive layer 4 formed on the substrate 2, and a protective layer 9. The plurality of structures 3 are formed on at least one of the substrate 2 and the protective layer 9 at a minute pitch equal to or smaller than the wavelength of visible light. It should be noted that Fig. 36A shows an example in which the plurality of structures 3 are formed on the surface of the substrate 2. A surface capacitance 150653.doc 56-201113551 type touch panel, an internal capacitive touch panel, and a projected capacitive touch panel can be used as the capacitive touch panel. When a peripheral member such as a wiring layer is formed on the peripheral portion of the substrate 2, desirably, as in the twelfth embodiment, the plurality of structures 3 are formed on the peripheral portion of the substrate 2, This is because the adhesion between the peripheral member such as a wiring layer and the substrate 2 can be improved. The protective layer 9 contains a dielectric material such as a dielectric layer as a main component. The transparent conductive layer 4 has a structure different from that of the touch panel 5'. For example, when the touch panel 5 is a surface capacitive touch panel or an internal capacitive touch panel, the transparent conductive layer 4 is a film having a thickness of approximately uniform thickness. When the touch panel 5() is thrown into a capacitive touch panel, the transparent conductive layer 4 is a transparent electrode pattern, for example, a day-and-day grid shape arranged at a predetermined pitch. The same material as the transparent conductive layer 4 of the first embodiment can be used as the material of the transparent conductive layer 4 of the first structural example. The other parts are the same as those of the ninth embodiment. (Second Structural Example) As shown in FIG. 3B, the touch panel of the first structural example is different from the touch panel of the first structural example in that a large number of structures 3 are equal to or smaller than visible light. A small pitch of the wavelength is formed on the surface (ie, the touch surface) of the protective layer 9 instead of the inside of the touch panel 5. It should be noted that the plurality of structures 3 may also be formed on the back surface joined to one side of the display device 54. Since the plurality of structures 3 are formed on at least one of the surface or the interior of the capacitive 150653.doc-57·201113551 touch panel 50 in the fourteenth embodiment, the tenth embodiment has the same The same effect of the eight embodiments. (Several Examples) Hereinafter, the embodiments will be explained in detail by way of examples, but the embodiments are not limited to the examples. These examples and experimental examples will be explained in the following order. 1. Optical properties of conductive optical sheets 2. Relationship between structure and optical properties and surface resistance 3. Relationship between thickness of transparent conductive layer and optical properties and surface resistance 4. Comparison with other types of low-reflection conductive films 5 · Structure and Relationship between optical characteristics 6. Relationship between shape and optical characteristics of transparent conductive layer 7. Relationship between filling ratio, diameter ratio, and reflectance characteristic (analog) 8. Optical of touch panel using conductive optical sheets Characteristics 9. Improvement in adhesion by fly-eye structure (height 配置, arrangement pitch p, and aspect ratio (H/p)) In the following examples, the height Η, arrangement pitch Ρ of the structure of the conductive optical sheet is determined as follows Aspect ratio (H/p). First, in the state where one of the transparent conductive layers is not deposited, a surface of one of the optical sheets is photographed by an AFM (Atomic Force Microscope). However, the configuration of the AFM image and its profile is obtained from the AFM image and its profile. Next, an aspect ratio (Η/P) is obtained using the g-set pitch ρ and the height Η. (Average film thickness of transparent conductive layer) 150653.doc -58- 201113551 In the following examples, the average film thickness of the transparent conductive layer was obtained as follows. First, 'in the direction of the trace extension (4) the electro-optical sheet contains the apex portion of the structure and the photo is taken by the TEM (transmission electron microscope). The TEM photo is taken transparently. a film thickness D1 of the conductive layer at the apex portions of the structures. The measurement is repeated at 1 G points randomly selected from the conductive optical sheet, and only the equal values are averaged (arithmetic median) Obtaining an average film thickness of one of the average film thicknesses used as the ### @ @ampamp and transparent conductive layer, the average film thickness gate "^ additionally" obtains the average of the transparent conductive layer at the apex portion of the convex portion as follows Membrane 晟 pn , ^ decimal film end 〜 1, average thickness of the transparent conductive layer at the slope of the structure as a convex portion, the thickness Dm2 and the average of the transparent conductive layer between the adjacent structures as convex portions Film thickness heart 3. First, the conductive optical sheet is cut in the direction in which the trace extends to include one of the vertices of the structures, and a section thereof is photographed by a TEM. The film thickness D1 of the transparent conductive layer at the apex portions of the 3 荨 structure was measured from the TEM photograph taken. Then, the film thickness D2 at the height - half _ of the structure 3 in several positions on the slope of the structure 3 is measured. Then, measuring the concave portion between the structures is very early. &lt; Film thickness D3 in the right dry position at a position where the depth of the concave portion becomes maximum. Miao..., after repeating the 10 points randomly selected from the conductive optical sheet, #Λ π 灵里 measured the thickness Dl, D2 and D3, and only averaged the measured values D1, D2 and D3 瞀 <瞀, 占句Value (median value) to obtain flatness Dml, Dm2 &amp; Dm3. Insulting In addition, the average film thickness at the apex portion of the structure as the concave portion is obtained as follows: 透明 m The transparent conductive layer is at the slope of the structure as a concave portion 150653.doc • 59· 201113551 The average film thickness Dm2 and the average film thickness Dm3 of the transparent conductive layer between adjacent structures as concave portions. First, the conductive optical sheet is cut in the direction in which the trace extends to include one of the vertices of the structures, and a section thereof is photographed by a TEM. The film thickness D1 of the transparent conductive layer at the apex portion of the structures as an intangible space was measured from the TEM photograph taken. Then, measuring the film thickness D2 at a half of the height of the structure in a plurality of positions on the slope of the structure, and subsequently measuring the height of the concave portion in the plurality of positions of the concave portion between the structures The film thickness D3 at one of the largest positions. Then, the film thicknesses di, D2, and D3 are repeatedly measured at one point randomly selected from the conductive optical sheets, and only the measured values D1, 〇2, and 〇3 are averaged (arithmetic middle value) to obtain The average film thickness is 〇1111, £) 〇12 and 1:3. &lt;1. Optical characteristics of conductive optical sheet&gt; (Example 1) First, a glass reel substrate having one outer diameter of 126 mm was prepared and a photoresist layer was deposited on one surface of the glass substrate as follows. Specifically, the photoresist is deposited by diluting a photoresist to 1/10 through a diluent and applying the diluted photoresist to a cylindrical surface of the glass crucible substrate by a thickness of about 70 nm. The photoresist layer. Next, the glass reel substrate of a recording medium is transported to the reel shown in Fig. u; a mass exposure device to expose the photoresist layer. Thus, the photoresist layer is patterned on the photoresist layer as a latent image of a single spiral that forms a hexagonal lattice pattern across the three solids. Specifically, even the laser light having the power of the surface of the glass reel substrate exposed to the surface of the glass I50653.doc • 60-201113551 0.50 mW/m is irradiated onto the region of the pattern, and the 卩 士 Η Η... The square lattice thus forms a concave hexagonal lattice pattern. The thickness of the photoresist layer in the direction of the trace array is about 50 nm in the direction in which the trace extends. 8. Next, the layer of the resist on the upper side of the glass reel substrate is subjected to a development process. In the development process, the ruthenium is resolved and the photo-resist layer at the exposed portion is developed. Specifically, the undeveloped glass reel substrate is placed on a furnace Α μ of a developing machine (not shown), and a developer is applied onto the surface of the glass reel base while rotating the entire The turntable, thereby developing the ruthenium on the surface of the substrate, obtains a photoresist glass substrate in which the photoresist layer is exposed in a hexagonal lattice pattern. Subsequently, the use-reel (four) device performs plasma etching in an atmosphere of CHF3 gas. Therefore, the etching is performed only on the surface of the glass reel substrate from the photoresist layer and corresponding to the portion of the hexagonal lattice pattern and does not etch other regions because the photoresist layer acts as a mask. As a result, a concave portion having an elliptical cone shape is obtained. One etching amount (depth) in the patterning at this time is changed by the etching time. Finally, by completely removing the photoresist layer by 〇2 ashing, a concave hexagonal lattice fly-eye glass reel is obtained, which is one of the depths in the column direction and is extended in the trace than the concave portion. The depth in the direction is deep. Next, the fly-eye glass reel mother board and the acrylic sheet to which the ultraviolet curable resin has been applied are brought into close contact with each other, and the acrylic sheet is peeled off while being irradiated by ultraviolet rays to be cured. Therefore, an optical sheet on which a plurality of structures are disposed on one main surface is obtained. Next, 150653.doc -61 - 201113551 one of the membranes was made by the rhyme method in the material structure ± deposited with one of the thicknesses of 3 I IZC^. τ...卞 The objective conductive optical sheet is manufactured by the method described above. (Example 2) - A conductive optical sheet was produced by the same method as in Example i except that an ITO film having a film thickness of 16 Å was formed on the structures. (Example 3) First, an optical sheet on which a plurality of structures were arranged was fabricated on one surface by the same method as in the example. Next, a plurality of structures are formed on the other main surface of the optical sheet by one of the same methods as forming a plurality of structures on one main surface. Therefore, an optical sheet in which a plurality of structures are formed on both surfaces is fabricated. Next, an IZ film having an average film thickness of 30 nm is deposited on the structures formed on one main surface by a sputtering method. Therefore, a conductive optical sheet in which the plurality of structures are formed on both surfaces is fabricated. (Comparative Example 1) An optical sheet was produced in the same manner as in Example 1 except that the step of depositing an IZO film was omitted. (Comparative Example 2) A conductive optical sheet was produced by depositing an IZO film having a film thickness of 30 nm on one surface of a smooth acrylic sheet by a sputtering method. (Shape evaluation) The surface configuration of one of the optical sheets was observed by an AFM (Atomic Force Microscope) in a state in which an IZO film was not deposited. Thereafter, the height of the structure of the examples and similar parameters are obtained from one of the AFM's 150653.doc -62 - 201113551 profile. The results are shown in Table 1. (Surface Resistance Evaluation) The surface resistance of one of the conductive optical sheets manufactured as described above was measured by a four-terminal method (JIS K 7 1 94). The results are shown in Table 1. (Reflection ratio/transmittance evaluation) The reflectance and transmittance of one of the conductive optical sheets manufactured as described above were evaluated using an evaluation device (V-550) available from JASCO Corporation. The results are shown in Figures 37A and 37B. (Table 1) Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Configuration pattern hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice _ structure shape cone shape cone shape cone shape cone shape - structure concavity And convex convex shape convex convex shape convex shape _ surface of the structure one surface one surface one surface two surfaces one surface • pitch (mm) 250 250 250 250 • height (nm) 300 300 300 300 _ aspect ratio 1.2 1.2 1.2 1.2 _ Average film thickness (nano) 30 160 30 _ 30 Surface resistance (Ω/port) 4000 2000 2000 2000 270 It should be noted that in Table 1, a conical shape refers to an elliptical cone shape having one of the curved apex portions. . The following can be found from the results of the above evaluation. When measured by the four-terminal method (JIS K 7 1 94), the surface resistance in Comparative Example 2 was 270 Ω/□. On the other hand, in which a fly-eye knot will be 150653.doc •63· 201113551

Example 1 formed on the surface φ A In Example 1, although a plate-shaped conversion would have a resistance of 2·0* 1 〇Qcm, one of the transparent conductive layers (IZ0 film) When deposited to have a film thickness of 3 〇 nanometer, the thickness of the + 亥 亥 亥 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千 千1 In the case of adding a test, the surface resistance at this time also becomes 4000 Ω/□. As a film type touch panel, there is no problem with this level of lightning resistance. As shown in Figure 37Α and 37Β, 杳&amp ;, Example 1, having the same level of characteristics as Comparative Example 1, in the comparative example i, the transparent conductive layer was not formed and only the fly-eye structure was formed on the surface. Bu Bing~a 楫 In addition, in Example 1, better optical characteristics than in Comparative Example 1 were obtained, and 干, 干燥 (4) deposited a transparent conductive layer having a comparable level of surface resistance in a specific example. On a smooth sheet. Since it is deposited in Example 2, the wire is 160 mm thick from the upper plate shape conversion.

One of the degrees (average film thickness) is transparent 暮I month-by-month conductive layer (IZ0 film), so the transmittance tends to decrease. It is considered that this is because the transparent conductive layer is formed to be too thick, and thus the structure of the equation (4) has a shape and thus it is difficult to maintain the desired shape. In other words, by forming the transparent conductive layer of the moon-shaped conductive layer to be too thick, it is difficult to grow a thin film while maintaining the shape of the monocular structure. In addition, even when the shape is not maintained as described above, the optical properties compare the optical properties of Example 2 with respect to ±, and in Comparative Example 2, only the transparent conductive layer is deposited on the smoothing sheet. .彳ϊ Μ Μ Μ Μ 专 专 专 专 专 专 专 专 专 专 专 专 专 专 # # # # # Example 3 was formed on both surfaces, compared to the one of the cans. Example 1 formed on a surface, improved 5 anti-reflective function. It can be seen from Fig. 37B that _ ^ ^ j 1 h can be realized in which the transmission is, for example, 97% or 99%-like. 150653.doc -64 - 201113551 &lt;2. Relationship between structure and optical properties and table о resistance> (Examples 4 to 6) A guide film was fabricated by the same method as in Example 1 except for the following: # A hexagonal lattice pattern is recorded to the photoresist layer by adjusting each of the trace-polarity inversion formater-frequency, one of the reels, and the feed pitch and patterning the photoresist layer on. (Example 7) A conductive optical sheet in which a plurality of concave structures (structures of reverse patterns) were formed on the surface of the surface was produced by the same method as in Example 颠 except that the concavity and convexity of Example 6 were reversed. (Comparative Example 3) A conductive optical sheet was produced in the same manner as in Example 4 except that the deposition of an IZO film was omitted. ~ (Comparative Example 4) A conductive optical sheet was produced in the same manner as in Example 6 except that the deposition of an IZO film was omitted. (Comparative Example 5) A conductive optical sheet was produced by depositing an IZO film having a film thickness of 4 Å on a smooth acrylic sheet by a sputtering method. (Shape evaluation) The surface configuration of one of the optical sheets was observed by an AFM (Atomic Force Microscope) in a state in which an IZO film was not deposited. Thereafter, the height of the structures of the examples and similar parameters are obtained from a profile of the profile of the AFM. The results are shown in Table 2. 150653.doc -65- 201113551 (Surface Resistance Evaluation) The surface resistance of one of the conductive optical sheets manufactured as described above was measured by a four-terminal method. The results are shown in Table 2. Further, Fig. 3 8 A shows a relationship between the aspect ratio and the surface resistance. Figure 38B shows a relationship between the height of the structures and the surface resistance. (Reflection ratio/transmittance evaluation) The reflectance and transmittance of one of the conductive optical sheets manufactured as described above were evaluated using an evaluation apparatus (V-550) available from JASCO Corporation. The results are shown in Figures 39A and 39B. Further, Figs. 40A and 40B show the transmission characteristics and reflection characteristics of Example 6 and Comparative Example 4, respectively, and Figs. 41A and 41B show the transmission characteristics and reflection characteristics of Example 4 and Comparative Example 3, respectively. (Table 2) Example 4 Example 5 Example 6 Example 7 Comparative Example 3 Comparative Example 4 Comparative Example 5 Configuration pattern hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice • Structure shape cone shape cone shape Cone shape cone shape cone shape cone shape structure concavity and convexity convex shape convex shape convex shape concave shape convex shape convex shape • surface of the structure one surface one surface one surface one surface one surface one surface one surface • pitch (mm) 250 240 270 270 250 270 • Height (nm) 300 200 170 170 300 170 Aspect ratio 1.2 0.8 0.6 0.6 1.2 0.6 _ Average film thickness (nano) 40 40 40 40 • _ 40 Surface resistance (Ω/□) 1900.0 1300.0 395.0 269.0 _ - 122.0 It should be noted that in Table 2, a conical shape refers to an elliptical cone shape having one of the curved apex portions. The following can be found from Figures 38A and 38B. The aspect ratio of the structures is related to the surface resistance, and the surface resistance tends to increase in proportion to the value of the aspect ratio by 150653.doc -66 - 201113551. This is believed to be due to the fact that the film thickness of the transparent conductive layer decreases as the slope of the structures becomes steeper, or the surface area increases as the height or depth of the structures increases, thereby producing a high electrical resistance. Since the touch panel is generally required to have a surface electric current I5 of 500 to 300 Ω/□ and 'therefore, it is desirable to appropriately adjust the aspect ratio so that a required resistance value can be obtained when the present embodiment is applied to a touch panel. . The following can be found from Figures 39A, 39B, 40A and 40B. Although the transmittance tends to decrease when the wavelength is shorter than 450 nm, excellent transmission characteristics are obtained when the wavelength is in the range of 450 nm to 800 nm. In addition, as the aspect ratio of the structures increases, one of the transmittances on the shorter wavelength side is more completely suppressed. Although the reflectance tends to increase when the wavelength is shorter than 450 nm, excellent reflection characteristics are obtained when the wavelength is in the range of 450 nm to 8 Å. In addition, an increase in the aspect ratio of the structures can more completely suppress an increase in the reflectance on the shorter wavelength side. The optical characteristics of Example 6 in which the convex structure was formed in 2 were better than those in Example 7 in which the concave structure was formed. j a IM) In the example 4 in which the aspect ratio is 12, compared to the example 6 in which it is 0·6, the 兮 兮 姐 b 系 由于 由于 改变 改变 改变 改变 改变 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 It is considered that the surface area of Example 4 in which the cross-sectional ratio of money is 1.2 is greater than the vertical inspection ratio of 0.6. You 丨&々# * t ', τ 〇 is the surface area, and the transparent conductive # swears: The film thickness of the ruthenium structure is thin. s Xiang Dong 150653.doc -67- 201113551 Relationship between characteristics and surface resistance &gt;&lt;3. Thickness and optics of transparent conductive layer (Example 8) (Example 9) Conductive optical sheet was manufactured by the same method as in Example 6. (Example 10) A conductive optical sheet was produced by the same method as in the actual method except that the average film 6 Φ ia η of the IZO film was 30 nm. (Comparative Example 6) The same method was employed: except that the deposition of a film of ΙΖ0 was omitted and the conductive optical sheet of Example 6 was used. (Shape evaluation) In which a ruthenium film is not deposited - η 4 ^ ^ , and L is observed by an AFM (atomic force). Thereafter, one of the AFMs. The profile of the face is obtained by the example of the 5 Hai special structure and similar parameters. The results are shown in Table 3. (Surface Resistance Evaluation) ^ Four-terminal method (m κ 7194) Measured by the above-mentioned specific conductive light Κ &gt; - ± _ is one of the surface resistances. The results are shown in Table 3. (Reflectance Ratio/Transmittance Evaluation) The reflectance and transmittance of the electro-optic sheet produced as described above were evaluated from MSCQ Co., Ltd. - Evaluation Apparatus (V_55G). The results are shown in Figures 42A and 42B. Mouth 150653.doc -68- 201113551 (Table 3) Example 8 Example 9 Example 10 Comparative Example 6 Configuration pattern hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice structure shape cone shape cone shape cone shape cone shape structure Concavity and convexity convex shape convex shape convex shape convex shape forming structure surface one surface one surface one surface one surface spacing (mm) 270 270 270 270 height 170 170 170 170 aspect ratio 0.6 0.6 0.6 0.6 average film thickness (Nai m) 50 40 30 _ Surface resistance (Ω/port) 270(77) 395(122) 590(169) - It should be noted that the resistance values in the brackets are measured by depositing on a smoothing sheet under the same deposition conditions. The values obtained by the resistance values of the IZO films. The following can be found from Figures 42A and 42B. The reflectance and transmittance on the shorter wavelength side with respect to 450 nm tend to decrease as the average film thickness increases. Summary [2. Relationship between structure and optical properties and surface resistance &gt;&lt;3. Relationship between thickness of transparent conductive layer and optical characteristics and surface resistance &gt; The following structure can be found. The optical properties on the longer wavelength side are hardly changed before and after the transparent conductive layer is deposited on the structures, and the optical properties on the shorter wavelength side are deposited on the transparent conductive layer on the structures. It tends to change before and after. Although these optical properties are popular when the structures have a shape with one aspect ratio being high, the surface resistance tends to increase. 150653.doc -69- 201113551 Reflection on the shorter wavelength side As the film thickness of the transparent conductive layer increases, the ratio tends to increase. The surface resistance is in a compromised relationship with the optical properties. &lt;4. Comparison with other types of low-reflection conductive films&gt; (Example 11) A conductive optical sheet was produced by the same method as in Example 5. (Example 12) A conductive optical sheet was produced in the same manner as in Example 6 except that the film thickness of the I Ζ film was set to 3 Å. (Comparative Example 7) A conductive optical sheet was produced by depositing an IZ tantalum film having a film thickness of 30 nm on one surface of a smooth acrylic sheet by a sputtering method. (Comparative Example 8) An optical film having an optical film of about 2. 〇iN and an optical film having about N of about 1.5 were sequentially deposited on a film by a PVD method, and an additional conductive film was deposited thereon. (Comparative Example 9) An optical film having an optical film of about 2. 2N and an optical film having about 1.5 N was deposited on a film in four layers by a PVD method, and an additional layer was deposited thereon. Conductive film. (Shape evaluation) In the state in which one IZO film was not deposited, one surface configuration of the optical sheets was observed by an AFM (Atomic Force Microscope). Thereafter, the grace and similar parameters of the structures of the s Xuanqi example are obtained from a profile of the profile of the AFM. The results of 150653.doc -70- 201113551 are shown in Table 4. (Reflection ratio/transmittance evaluation) The transmittance of one of the conductive optical sheets manufactured as described above was evaluated using an evaluation device (V-550) available from JASCO Corporation. The result is shown in Fig. 43. (Table 4) Example 11 Example 12 Comparative Example 7 Comparative Example 8 Comparative Example 9 Configuration pattern hexagonal lattice hexagonal lattice _ . _ Structure shape cone shape cone shape structure concavity and convexity convex shape convex shape. _ - Forming the surface of the structure One surface One surface _. Spacing (mm) 240 270 _ _ _ Height (nm) 200 170 _ _ _ Aspect ratio 0.8 0.6 _ - Average film thickness (nano) 40 30 _ _ Surface resistance (Ω/ Port) 300.0 300 250 400 500 The following can be found from Figure 43. In Examples 11 and 12 in which the transparent conductive layers were deposited on the structures, the transmission characteristics in the wavelength band of 400 nm to 800 nm were higher than those of Comparative Example 7 in which the transparent conductive layer was deposited on the smooth sheet. Other features are better. The transmission characteristics of Comparative Examples 8 and 9 each having a multilayer structure were excellent at wavelengths up to about 500 nm, but the transmission characteristics of Examples 11 and 12 in which the transparent conductive layers were deposited on the structures were The characteristics of the entire wavelength bands of 400 nm to 800 nm are better than those of Comparative Examples 8 and 9 each having a multilayer structure. &lt;5. Relationship between structure and optical characteristics&gt; 150653.doc •71 · 201113551 (Example 13) Rate error = for each-trace adjustment - polarity inversion formatted H signal - frequency will be square The rpm and -feed pitch and patterned - photoresist layers were recorded on the photoresist layer in a flat pattern. A film having 2 g of nanometers and again - IZ0 film was formed on the structures. Except for this, an optical sheet was produced by the same method as in Example 1. Hunting: An optical sheet was fabricated in the same manner as in Example 1 except for the following: Hunting was adjusted for each-trace-polarity-reversed formatted signal, one frequency + one tong glaze rpm and one The spacers are fed and patterned with a photoresist layer to record the /, square lattice pattern onto the photoresist layer. (Shape evaluation) The surface configuration of the far optical sheet was observed by an AFM (Atomic Force Microscope) in one of the undeposited-IZO films. Thereafter, the heights and similar parameters of the structures of the examples are paid from the profile of the AFM. The results are shown in Table 5. (Surface Resistance Evaluation) The surface resistance of one of the conductive optical sheets manufactured as described above was measured by a four-terminal method (JIS K 7194). The results are shown in Table 5. (Reflection ratio/transmittance evaluation) The reflectance and transmittance of one of the conductive optical sheets manufactured as described above were evaluated using an evaluation device (v_55〇) available from JASCO Corporation. The results are shown in Figures 44A and 44B. 150653.doc • 72-201113551 (Table 5) Example 13 Example 14 Configuration pattern hexagonal lattice hexagonal lattice structure shape cone shape cone shape structure concavity and convexity convex shape convex shape forming structure surface one surface one surface Spacing (mm) 300 240 Height (nano) 200 200 Aspect ratio 0.67 0.83 Average film thickness (nano) 20 30 Surface resistance (Ω/α) 550 550 It should be noted that in Table 5, a conical shape means having a bend One of the vertices is an elliptical cone shape. The following can be found from Figures 44A and 44B. By reducing an aspect ratio, deterioration of the optical characteristics on the shorter wavelength side with respect to 450 nm can be suppressed. Since the transmission characteristics are improved, it is considered that the absorption characteristics are improved. &lt;6. Relationship between shape and optical characteristics of transparent conductive layer&gt; (Example 15) A conductive optical was produced by the same method as in Example 14 except that the average film thickness of the IZO film was set to 30 nm. sheet. (Comparative Example 10) An optical sheet was produced in the same manner as in Example 15 except that the deposition of an IZO film was omitted. (Example 16) A conductive optical sheet was produced by the same method as in Example 150653.doc • 73·201113551 12 except that the average film thickness of the IZO film was set to 20 nm. (Comparative Example 11) The same method An optical sheet was produced in the same manner as in Example i6 except that the deposition of an IZO film was omitted. (Example 17) Reverse the concavity and convexity of Example 4. One of the conductive optical sheets having an average film thickness of 30 nm was produced. The other processes are performed by the same method as in Example 4, and a conductive optical sheet in which a plurality of concave structures (reverse pattern structures) are formed on one surface is manufactured. (Comparative Example. 12) An optical sheet was produced in the same manner as in Example 17 except that the deposition of an IZ ruthenium film was omitted. (Example 18) An optical sheet on a structure in which one of the average film thicknesses of 30 nm was formed in which the change rate of the bending line of one of the cross-sectional profiles was changed was produced. (Comparative Example 13) An optical sheet was produced in the same manner as in Example 18 except that the deposition of an IZO film was omitted. (Shape evaluation) A surface configuration of one of the optical sheets was observed by an AFM (Atomic Force Microscope) in a state in which an IZO film was not deposited. Thereafter, the heights and similar parameters of the structures of the examples are obtained from a profile of the AFM. The results are shown in Table 6. 150653.doc -74- 201113551 (Surface Resistance Evaluation) The surface resistance of one of the conductive optical sheets manufactured as described above was measured by a four-terminal method (JIS K 7 194). The results are shown in Table 6. (Evaluation of Transparent Conductive Layer) The optical sheet is cut in a cross-sectional direction of one of the conductive films formed on the structures, and the TEM (transmission electron microscope) is used to observe the structures and one of the conductive films bonded thereto Profile image. (Reflection Ratio Evaluation) The reflectance of one of the conductive optical sheets manufactured as described above was evaluated using an evaluation device (V-550) available from JASCO Corporation. The results are shown in Figs. 45A to 46B. (Table 6) Example 15 Comparative Example 10 Example 16 Comparative Example 11 Example 17 Comparative Example 12 Example 18 Comparative Example 13 Configuration pattern hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice hexagonal lattice Structure shape Cone shape Cone shape Cone shape Cone shape Cone shape Cone shape S-shaped refractive index curve S-shaped refractive index curve Structure Concavity and convexity convex shape convex shape convex shape convex shape concave shape concave shape convex The shape of the convex shape forms the surface of the structure - one surface one surface one surface one surface one surface one surface one surface one surface one surface spacing (mm) 240 240 270 270 250 250 250 250 height (nano) 200 200 170 170 300 300 200 200 Ratio 0.83 0.83 0.6 0.6 1.2 1.2 0.8 0.8 Average film thickness (nano) 30 20 30 30 • Surface resistance (Ω/mouth) 550 - 400 • 500 - 500 _ Note that in Table 6, a conical shape means having one An elliptical cone shape that bends one of the apex portions. The shape evaluation and reflectance evaluation of the transparent conductive layer can be found within the following 150653.doc •75· 201113551. In the present example 15, the average film thickness at one end portion of each structure, the average film thickness D2 at one of the slopes of the structure, and the bottom of the structure. Hey. One of the average film thicknesses D3 between the splits has the following relationship.

Dl (38 nm) &gt; D3 (= 21 nm) &gt; 〇 2 (= 14 nm to η nm), since IZO has a refractive index of about 2 ,, only the end portion of the structure has 曰The refractive index added. Therefore, as shown in Fig. 45A, the reflectance is increased by depositing the IZO. It was found that in Example 16, the IZ tantalum film was deposited almost uniformly on the structures, as shown in Fig. 45B, which was smaller than a change before and after deposition. In the case of the bottom portion of the concave structure and the top portion of the concave structure, the thickness of the sentence film is significantly larger than the average film thickness of the other portions. Specific. It was found that the IZO film was at the top portion, and the apparently large average film thickness in this deposition state, the change in the reflectance tends to show a complicated behavior as shown in Fig. 46A and also tends to increase. It was found that in practice, the average film thickness D1 at the end portion of the structure in Example 15, the average film thickness (1) at the slope of the structure, and the flat_thickness D3 between the bottom (4) points of the structure have the following relationship. .

Dl (= 36 nm) &gt; D2 (= 2 () nanometer) &gt; 〇 3 (= 18 Nai, however, when the wavelength is shorter than about 500 nm, the reflectance tends to increase sharply Because the end portion of the structure is gentle and the end portion is present, there is a tendency that the transparent conductive layer is less likely to be bonded to a steep slope and more than 150653.doc -76·201113551 is bonded to a relatively gentle surface. When the film is uniformly deposited over the entire structure, the change in optical properties before and after deposition tends to be small. In addition, when the structure such as Yanhai has a configuration closer to a free surface, the transparent conductive layer It tends to adhere more uniformly to the entire structure. &lt;7. Relationship between fill rate, diameter ratio, and reflectance characteristics. Next, a ratio (2r/) is discussed by _RCWA (strictly coupled wave analysis) simulation. A relationship between Pl)*100) and anti-reflection characteristics. [Experimental Example 1] Fig. 47A is a diagram for explaining the filling rate when the structures are arranged in a hexagonal lattice pattern. In the case where the structures are arranged in a hexagonal lattice pattern as shown in Fig. 47A, when a ratio ((2r/pi)*i〇〇) (pi: structure is in the same trace, the configuration, The magnification obtained when the macro, r: the radius of the bottom surface of the structure is changed, is obtained by the following expression (7). Filling rate = (S (hexagon) / S (unit)) * 100 (2) Unit cell area: S (unit) = 2r * (2^3) r Area of the bottom surface of the unit cell: S (six squares) )=2*πΓ·2 (If the fill rate is obtained from the pattern when 2r&gt; P 1 ) For example, when the arrangement pitch is 2 and the bottom surface of one of the structures is half-controlled, S (unit) ), s (six squares), a ratio ((10) and a fill rate are as follows. S (unit) = 6.9282 S (six) = 6.28319 (2r/Pl)n〇〇 = l〇〇.〇〇/0 150653 .doc •77- 201113551 Filling rate=(S(hexagon)/S(unit))*i〇〇=;9〇.7% Table 7 shows the filling ratio and ratio obtained by the above expression (2) ( (1r/Pl)*l〇〇) A relationship (Table 7) (2r/Pl)xl〇〇fill rate 115.4% 100.0% 100.0% 90.7% 99.0% 88.9% 95.0% 81.8% 90.0% 73.5% 85.0% 65.5% 80.0% 58.0% 75.0% 51.0% (Experimental Example 2) The figure is still used to illustrate one of the filling rates when the structures are configured as a square lattice pattern. In the case of one of the square lattice patterns not shown in Fig. 47B, when a ratio Gh/p1 〇 〇) and ratio ((2r/P2)*10〇) (Pi: the arrangement pitch of the structure in the same trace, P2 ·' in the direction of 45 degrees with respect to the trace, Γ · the bottom surface of the structure The filling rate obtained when the radius is changed is obtained by the following expression (3). Filling rate = (S (square) / S (unit)) η 〇〇 (3) Unit cell area: S (unit) = 2r * 2r Area of the bottom surface of the unit cell: s (square) = 兀 ^ I50653.doc -78. 201113551 (If the fill rate is obtained from the pattern when 2r>P 1 ) For example, when the configuration pitch P2 is 2 and one of the bottom surfaces of one of the structures has a radius r of 1, S (unit), S (square), a ratio ((2r/Pl)*100), a ratio ((2r/P2)*100), and a filling ratio have the following values. • S (unit) = 4 . S (square) = 3.14159 (2r/Pl)* 100 = 70.7% (2r/P2)*100 = 100.0°/〇fill rate = (S (square) / S (unit)) *100 = 78.5% Table 8 shows a relationship between the filling ratio, the ratio ((217?1)*100), and the ratio (217卩2)*100 obtained by the above expression (3). In addition, the relationship between the arrangement pitch P1 and P2 of the square lattice becomes P1=V2*P2 ° (Table 8) (2r/Pl)xl00 (2r/P2)xl00 Filling rate 100.0% 141.4% 100.0% 84.9% 120.0% 95.1% 81.3% 115.0% 92.4% 77.8% 110.0% 88.9% 74.2% 105.0% 84.4% 70.7% 100.0% 78.5% 70.0% 99.0% 77.0% 67.2% 95.0% 70.9% 63.6% 90.0% 63.6% 60.1% 85.0% 56.7% 56.6% 80.0% 50.3% 53.0% 75.0% 44.2% 150653.doc -79- 201113551 (Experimental Example 3) By ratio of the diameter 2r of one of the bottom surfaces of the structure with respect to the arrangement pitch p 1 ((2r/P1) *100) Set to 80%, 85%, 90%, 95°/. And 99%, a reflectance was obtained by simulation under the following conditions. Figure 48 is a graph showing the results. Shape of the structure: bell shape polarization: no refractive index · 1.48 configuration pitch P1: 3 2 0 nanometer structure height: 41 5 nm aspect ratio: 1.3 0 configuration of the structure: hexagonal lattice can be seen from Figure 48 It is found that in the ratio of μ% or more ((2r/pi)*1〇〇), in the visible wavelength range (0.4 to 0.7 μηη), an average reflectance r is R &lt; 0.5% and a sufficient Anti-reflective effect. In this case, the filling rate of one of the bottom surfaces is 65% or more. In the case of a ratio of 9〇% or more ((2r/Pl)*100), the average reflectance R in the visible wavelength range is R&lt;0.3% and one antireflection effect with higher efficiency is obtained. In this case, the filling rate of the bottom surface is 73% or more, and the efficiency increases as the filling rate becomes higher (the upper limit is 1%). In the case where the structures are heavier to each other, it is assumed that the height of the structure is from one of the lowest portions. In addition, it is confirmed that the tendency of the filling ratio and the reflectance is the same in the square lattice. 150653.doc -80-201113551 (Optical Characteristics of Touch Panel Using Conductive Optical Sheet) (Comparative Example 14) Fig. 49A is a perspective view showing one of the structures of a resistive film type touch panel of Comparative Example 14. Figure 49B is a cross-sectional view showing the structure of the resistive film type touch panel of Comparative Example 14. It should be noted that the arrows in Fig. 49B indicate the incident light entering the touch panel and the reflected light reflected at the interface. It should be noted that the arrows in the cross-sectional views of the structures of the resistive film type touch panels of Examples 19 to 22 which are not compared with Examples 15 and 16 to be described later indicate the same thing. First, an IT tantalum film 1〇3 having a thickness of 26 nm is deposited on a main surface of a tantalum (polyethylene terephthalate) film i 〇 2 by a sputtering method. As a result, the first conductive base material 101 which is intended to be one of the touch sides is manufactured. Next, an ITO film 113 having a thickness of one of 26 nm is deposited on one main surface of one of the glass substrates 112 by a sputtering method, and as a result, a second conductive substrate material to be one of the display device sides is fabricated.丨丨i. Next, the first conductive base material 〇1 and the second conductive base material 丨丨丨 are configured such that the ITO films are opposed to each other and an air layer is formed between the base materials, and the circumference of the base materials Portions are joined to each other by a pressure sensitive adhesive tape 121. Therefore, a resistive film type touch panel 1 is obtained. (Reflection ratio/transmittance evaluation) According to JIS-Z8722, the resistive film type touch surface feioomnb obtained as described above is further referred to as 'resistive film type touch panel attached to the liquid crystal display device 54 according to ns_K7l〇5 _ - the transmittance. (Visibility Evaluation) 150653.doc -81 · 201113551 The visibility of the resistive film type touch panel (10) obtained as described above was evaluated as follows. The resistive touch panel 100 is placed under the ordinary fluorescent light to visually inspect the glare caused by the light and to estimate the visibility based on the following. , ° a: The outline of the fluorescent lamp is clear b: The outline of the fluorescent lamp is blurred to some extent c. The outline of the fluorescent lamp is not clear and the reflected light is obviously weak d: the outline of the fluorescent lamp cannot be seen and reflected Blur Light (Comparative Example 15) Fig. 50A is a perspective view showing one of the resistive touch panels of Comparative Example 15. Fig. 1 is a cross-sectional view showing the structure of the resistive film type touch panel of Comparative Example 15. The resistive film type touch panel 100 is obtained by the same method as the comparative example except that a film having a thickness of 26 nm is deposited on a PET (polyphenylene terephthalate) Ethylene dicarboxylate) film 114^ One of the base materials obtained on one main surface is used as the second conductive base material. Then, as in the case of Comparative Example 14, the ratio of the & And visibility. (Comparative Example 1 6) Fig. 5 1A is a perspective view showing one of the structures of a resistive film type touch panel of Comparative Example 丨6. Fig. 51B is a cross-sectional view showing the structure of a resistive film type touch panel of Comparative Example 16. First, an IT tantalum film 1〇3 having a thickness of one of 26 nm is deposited on the main surface of the -λ/4 retardation film 104 by sputtering to thereby produce 150653.doc-82- 201113551 One of the first conductive substrate materials 101 on the touch side. Next, an ITO film 113 having a thickness of one of 26 nm is deposited on one main surface of one of the λ/4 retardation films 115 by a money plating method, thereby manufacturing one side to be a display device side. The second conductive base material lu. Next, the first conductive substrate material 1 〇1 and the second conductive base material 丨丨丨 are configured such that their IT 〇 films are opposed to each other and an air layer is formed between the two base materials, and the circumference of the base materials Portions are attached to each other by a pressure sensitive adhesive tape 丨21. Next, a polarizer 131 having one of main surfaces on which an AR (anti-reflection) layer 132 is formed is prepared, and the polarizer 131 is attached to the first conductive base material 1〇1 via a pressure-sensitive adhesive tape 124. A touch surface side. In this case, one position of the polarizer 131 is adjusted such that the polarizer i3i and the transmission axis of one of the polarizers provided on one of the display surface sides of the liquid crystal display device 54 become parallel to each other. Therefore, the resistive film type touch panel 100 is obtained. Next, as in the case of Comparative Example 14, a reflectance/transmittance and visibility were evaluated. (Comparative Example 19) The figure shows a perspective view of the structure of the resistive film type touch panel of Example 19. Figure 52B is a cross-sectional view showing the structure of the resistive film type touch panel of Example 19. An optical sheet 2 was obtained by the same method as Comparative Example 1 except that the conditions of exposure and characterization were adjusted to form a plurality of structures 3 having the following structure. It should be noted that a PET film is used as a film to be a substrate. Configuration pattern: Concavity and convexity of hexagonal lattice structure: convex shape I50653.doc -83- 201113551 Surface of the formed structure: a surface pitch P1: 2 7 〇 nanometer pitch P2: 270 nanonanometer. 160 nm It should be noted that the distance, height and aspect ratio of the structures 3 are obtained from observations using AFM (Atomic Force Microscopy). Next, an ITO film 4' having an average film thickness of 26 nm is deposited on one main surface of the optical sheet 2 on which one of the plurality of structures 3 is formed by a sputtering method. A conductive substrate material 51. Next, a second conductive base material 52 is obtained by the same method as in the case of manufacturing the first conductive base material 5! except for using a PET film. Then, the first conductive base material 51 and the second conductive base material 52 are configured such that their ITO films are opposed to each other and an air layer is formed between the two base materials, and the circumferential portions of the two base materials are pressed by one The sensitive tapes 55 are attached to each other. Therefore, a resistive touch panel 5 was obtained. Then, a reflectance/transmittance and visibility were evaluated as in Comparative Example 14. (Example 20) Fig. 53A is a perspective view showing a structure of one of the resistive film type touch panels of Example 2. Figure 53B is a cross-sectional view showing the structure of the resistive film type touch panel of Example 20. First, as in Example 19, the force has an optical sheet 5 on which one main surface of a plurality of structures is disposed. Next, in the same manner, a plurality of structures 3 are formed on the other main surface of the optical sheet 51. . Therefore, the optical sheet 2 having the two main surfaces on which the plurality of structures 3 are formed is manufactured by 150653.doc -84 - 201113551 = by using the optical sheet 2 to manufacture the first conductive base material 51. The same method as in Example 19 obtained a resistive film type touch panel. Subsequently, a reflectance/transmission ratio and visibility were evaluated as in Comparative Example 14. (Example 21) Figure 54A is a perspective view showing a structure of one of the resistive film type touch panels of Example 21. Fig. 54B is a cross-sectional view showing the structure of the resistive film type touch panel of Example 21. First, a -1TO film 4 having a thickness of 26 nm is deposited on one main surface of a λ/4 retardation film 2 by a sputtering method, thereby fabricating one of the first touch surfaces to be formed. Conductive substrate material 51. Next, a second conductive base material 52 was produced as in the case of Example a except that the /4 retardation film 2 was used as a film to be a substrate. Next, the first conductive base material 51 and the second conductive base material 52 are configured such that their Ιτ〇 films are opposed to each other and an air layer is formed between the two base materials, and the circumferential portions of the two base materials are borrowed They are attached to each other by a pressure sensitive adhesive tape 55. A polarizer 58 is attached to the surface of the first conductive substrate material 51 via a pressure sensitive adhesive tape 60 on the touch side, and then a top plate (front surface member) 59 is attached to the polarizer 58 via the pressure sensitive tape 61. Next, a glass substrate 56 is attached to the second conductive base material 52 via a pressure sensitive adhesive tape 57. Therefore, a resistive film type touch panel 50 is obtained. Next, the ratio/transmit ratio and a degree of visibility are as in Comparative Example 丨4. (Example 22) Figure 55 is a perspective view showing the structure of a resistive film type touch panel of Example 22. Figure 55B is a cross-sectional view showing a structure of a resistive film type touch panel of Example 22, 150653.doc-85-201113551. The same method as in Example 19 was obtained except that in the two opposite surfaces of the first conductive base material 51 and the second conductive base material 52, only the opposite surfaces of the second conductive base material 52 were formed with a plurality of structures 3. A resistive film type touch panel 50. Next, a top plate (front surface member) 59 is attached to a surface via a pressure sensitive adhesive tape 60 to become one of the touch side of the resistive film type touch panel 50, and thereafter the glass substrate 56 is attached via a pressure sensitive adhesive tape 57. Connected to the second conductive substrate material 52. Subsequently, a reflection ratio/transmittance and visibility were evaluated as in Comparative Example 14. Table 9 shows the results of evaluation of the touch panels of Comparative Examples 14 to 16 and Examples 19 to 22. (Table 9) Structure Visibility Reflectance of Touch Panel [%] Transmittance [%] Comparative Example 14 F/G a 19 85(85) Comparative Example 15 F/F a 15 82(82) Comparative Example 16 AR/Po /Re/Re d ~1 40(80) Example 19 MF/MF c 6 92(92) Example 20 BMF/MF d 2 92(92) Example 21 TP/Po/Re/MRe c 6 84 Example 22 TP/F /MF b 10 90 F : PET film G: glass substrate AR : AR layer 150653.doc -86· 201113551 P〇: polarizer Re : λ/4 retardation film MF: fly with fly-eye structure on one surface Eye film BMF: Fly-eye membrane with a rope-like structure on both surfaces: Top plate MRe: λ/4 retardation film a with fly-eye structure on one surface a: regardless of the state of external light For relatively poor visibility b: visibility with respect to the state difference of external light c: good visibility with a small amount of external light d: regardless of the state of the external light is popular visibility should pay attention to the reflectance and transmission shown in Table 9. The ratio is based on the corrected transmittance of sunlight and the reflectance corrected according to the light reflectance after measuring all wavelengths from 38 〇 to 780 nm. The following can be found from Table 9. In Example 19 in which a plurality of structures 3 are formed on the opposite surfaces of the first and second conductive substrate materials 51 and 52, compared to the case where the fly-eye structure 3 as described above is not formed on the opposite surface In Examples 14 and 15, a reflectance can be greatly reduced and the transmittance is greatly increased. In the example 2 in which the plurality of structures 3 are formed on the two surfaces of the first conductive base material 51 to be a touch side, as in the case where the polarizer 131 and the AR layer 132 are laminated on the touch side In the comparative example η on the surface, a reflectance ratio 0 can be reduced without causing a significant decrease in one of the transmittances. In which the polarizer 58 is disposed on the first conductive substrate to be the touch side 150653.doc In Example 21 on the surface of the material 51, a reflectance can be reduced as compared to the example 22 in which the polarizer is not disposed on the surface of the first conductive base material 51 to be the touch side. Figure 56 is a graph showing the reflection characteristics of the resistive film type touch panels of Examples 19 and 2 and Comparative Example 15. The following can be found from Figure 56. In which a plurality of structures 3 are formed on the first and second conductive substrates Examples 19 and 2 on the opposite surfaces of materials 5 j and 52 can be reduced from 380 nm to 78 compared to Comparative Example 15 in which the fly-eye structure 3 as described above is not formed on the opposite surface. One of the wavelength ranges in one of the nanometers of reflection. Specifically and S In Examples 19 and 20, a low reflectance characteristic of 6% or lower can be achieved at one wavelength of 55 Å (where a human photometric factor is highest) and in 550 nm in Comparative Example 15. A low reflectance characteristic of only about 15% is obtained in the wavelength. The wavelength dependence in the examples 19 and 2G is smaller than the wavelength dependence of the comparative example 15^. Specifically, t, in which a plurality of structures 3 are formed to be touch-sensitive On the two main surfaces of the side of the first electrical substrate material 5, the wavelength dependence is small and the reflection characteristics are almost flat in the wavelength range from the nanometer to the nanometer. <9. Improvement of Adhesiveness of Structure> (Example 23) A conductive optical sheet was fabricated by adjusting the conditions of the exposure step and the etching step and configuring the structure having the following structure into a hexagonal lattice pattern in the same manner as in the actual one. Height Η : 240 nm 150653.doc •88· 201113551 Configuration pitch P : 220 nm aspect ratio (Η/P): 1.09 (Example 24) By adjusting the conditions of the exposure step and the etching step and will have the following structure The structure is configured in a hexagonal lattice pattern and examples The same procedure was used to fabricate a conductive optical sheet. Height Η: 170 nm configuration pitch Ρ: 270 nm aspect ratio (Η/P): 〇·63 (Comparative Example 17) by using a hard coat and a ΙΤΟ The film was sequentially laminated on a PET film to fabricate a conductive optical sheet. (Comparative Example 18) A conductive optical was produced by sequentially laminating a hard layer containing a filler and an ITO film on a PET film. (Adhesive evaluation) After applying a silver paste to the electrode surface of one of the conductive optical sheets manufactured as described above, the 5 gal silver paste was calcined for 30 minutes under the environment of i 3 . Next, perform a strip test on the square. As the belt, a polyimide having a bismuth adhesiveness was used. The results of this test are shown in Figure W. 150653.doc •89- 201113551 (Table ίο) Example 23 Example 24 Comparative Example 17 Comparative Example 18 Peeling amount (25 total) 0/25 0/25 5/25-6/25 18/25 〜24/25 Full beam Transmittance 96% 95% 90% 87% The following can be found from Table 10 and it was found that the tape could not be peeled off in Examples 23 and 24. In contrast, in Comparative Example 17, 5 to 6 squares were peeled off and in Comparative Example 18, peeled off to 24 squares. Although 95% to 96% - high transmittance was obtained in Examples 23 and 24, only one of 87% to 90% transmittance was obtained in Comparative Examples 17 and 18. As described above, by forming a fly-eye structure on the entire surface of the film as the substrate, it is possible to achieve excellent adhesion with respect to a wiring material such as a conductive paste and a high transmittance. Floor. In addition, by forming a fly-eye structure, it is expected that one of the adhesions with respect to a pressure-sensitive adhesive (such as a pressure-sensitive adhesive paste), an insulating material (such as an insulating paste, a spacer), and the like is improved. . The numerical values, configurations, materials, and structures used in the above-described embodiments and examples are merely examples, and values, configurations, materials, and structures different from the above may be suitably used. Furthermore, the structure of the embodiments described above can be used in combination. Furthermore, in the embodiments described above, the optical device 进一步 may further contain a low-fold layer on the uneven surface on the side on which the structure 3 is formed. The low refractive specific layer desirably includes as the main component: 150653.doc -90·201113551 A material having a refractive index lower than that of one of the materials constituting the substrate 2, the structure 3, and the protrusion 5. As the material of this low refractive index layer, for example, an organic material such as a fluorine-based resin or an inorganic low refractive index material (LiF and MgF2) is used. Moreover, in the embodiments described above, the optical device can be fabricated by thermal transfer. Specifically, a method of manufacturing an optical device by heating a substrate formed of a thermoplastic resin as a main component and pressing a stamp (such as a reel mother board 11 and a disc mother board) can be used. The substrate is sufficiently soft due to heating. The example applied to the resistive touch panel has been described in the above-described application of the resistive touch panel. However, the embodiments can also be applied to a resistive type. Touch panels, an ultrasonic touch panel, an optical touch panel, and the like. It should be understood that various changes and modifications of the presently preferred embodiments described herein will be apparent to those skilled in the art. These changes and modifications are made without departing from the spirit and scope of the subject matter and without prejudice to its intended advantages. Because of this, the changes and modifications are intended to be covered by the accompanying patent application. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic plan view showing one structural example of a conductive optical device according to a first embodiment. Figure 1B is a partially enlarged plan view showing one of the conductive optical devices shown in Figure 1A. Figure 1C is a trace of Figure 1B. 1A is a cross-sectional view of one of the traces T2, T4, ... of Fig. 1B. Fig. 1E shows the formation of a latent image corresponding to the traces T1, T3, ... of Fig. 1b. A schematic diagram of one of the modulated waveforms of one of the lasers used. Figure 1F shows the formation of one of the 150653.doc-91-201113551 laser light that is adapted to the traces of the traces Τ2, T4.. Figure 2 is a partially enlarged perspective view of the conductive optical device shown in Figure 1A; Figure 3 is a cross-sectional view of the conductive optical device shown in Figure 1A in the direction of the trace extension. 3 is a cross-sectional view of the conductive optical device shown in FIG. 1A in the -θ direction; FIG. 4 is a partially enlarged perspective view of the conductive optical device shown in FIG. 1Af; FIG. 5 is a partial enlarged view of the conductive optical device shown in FIG. Figure 6 is a partially enlarged perspective view of the conductive optical device shown in Figure 1A; Figure 7 is a diagram for explaining one of the methods of setting a bottom surface of a structure in the case where the boundary system between the structures is not apparent - Fig. 8A to Fig. 8 each show the ellipticity change when the bottom surface of the structure Illustration of one of the bottom surface configurations; FIG. 9A - shows an illustration of one of the configuration examples each having a - cone shape or a - truncated cone shape. The figure shows that each has an elliptical cone shape or Figure 1A is a perspective view showing one of structural examples of a reel mother plate for manufacturing a conductive optical device. Fig. 1A Figure 1 is a schematic view showing one structural example of a reel substrate exposure apparatus; Figure 12A to 12C are for explaining the manufacture of a conductive optical device according to the first embodiment. Process diagram of one method; 150653.doc -92- 201113551 FIGS. 13A to 13C are diagrams for explaining a method of manufacturing a conductive optical device according to the first embodiment; FIGS. MA to MB are for explaining manufacturing basis A process diagram of a method of electrically conducting an optical device of the first embodiment; Fig. 15 is a schematic plan view showing one structural example of one of the electrically conductive optical devices according to a second embodiment. Fig. 1 5B is a partially enlarged plan view showing one of the conductive optical devices shown in Fig. 15. Figure 15C is a cross-sectional view of one of the traces T1, T3, ... of Figure 15B. Figure 15D is a cross-sectional view of the traces T2, T4, ... of Figure 15B. Figure 15E is a diagram showing one of the modulated waveforms of the laser light used to form the latent image corresponding to the traces τι, T3, ... of Figure 15B. Figure 15F is a diagram showing one of the modulated waveforms of one of the laser light used to form the latent image corresponding to the traces T2, T4 of Figure 15B; Figure 16 shows one of the elliptical rates when one of the bottom surfaces of the structure changes. One of the bottom surface configurations is illustrated; Figure 1 shows a perspective view of one of the structural examples of one of the reel masters used to fabricate a conductive optic. Figure 17B is a partially enlarged plan view showing a reel mother board shown in Figure 17A; Figure 1A is a schematic plan view showing an example of the structure of one of the electroconductive optical devices according to the third embodiment. Figure 18B is a diagram of the conductive light shown in Figure 18A. Divided into a plan. Figure 1 8C is a cross-sectional view of the traces τ 1, D, 3, ... of Figure 18B. Figure 18D is a cross-sectional view of traces T2, T4, ... of Figure 18B; Figure 19 is a plan view of a structure of one of the disk motherboards used to fabricate one of the conductive optical devices. Figure 19B is a partially enlarged plan view of one of the disk mother plates shown in Figure 19A, 150653.doc • 93-201113551; Figure 20 is a schematic view showing one structural example of a disk substrate exposure device; Figure 21A is a fourth embodiment according to a fourth embodiment One of the structural examples of one of the conductive optical devices is a schematic plan view. Figure 21B is a partially enlarged plan view showing one of the conductive optical devices shown in Figure 21A; Figure 22A is a schematic plan view showing one structural example of one of the conductive optical devices according to a fifth embodiment. Figure 22B is a partially enlarged plan view showing one of the electroconductive optical devices shown in Figure 22A. Figure 22C is a cross-sectional view of one of the traces T1, T3, ... of Figure 22B. Figure 22D is a cross-sectional view of one of the traces T2, T4, ... of Figure 22B; Figure 23 is a partially enlarged perspective view of one of the conductive optical devices shown in Figure 22A; Figure 24A shows a conductive optical device according to a sixth embodiment One of the structural examples is a schematic plan view. Figure 24B is a partially enlarged plan view showing one of the electroconductive optical devices shown in Figure 24A. Figure 24C is a cross-sectional view of one of the traces T1, T3, ... of Figure 24B. Figure 24D is a cross-sectional view of one of the traces T2, T4, ... of Figure 24B; Figure 25 is a partially enlarged perspective view of one of the conductive optical devices shown in Figure 24A, and Figure 26 is a refraction of one of the conductive optical devices according to the sixth embodiment FIG. 27 is a cross-sectional view showing one example of a structural configuration; FIGS. 28A to 28C are diagrams for explaining one definition of a change point; FIG. 29 is a seventh embodiment according to a seventh embodiment. One of the conductive optical devices is a cross-sectional view of one of the embodiments of the conductive optical device; FIG. 30 is a cross-sectional view showing one structural example of one of the conductive optical devices according to an eighth embodiment; A cross-sectional view of one structural example of a touch panel according to a ninth embodiment. Figure 31B is a cross-sectional view showing a modified example of the structure of the touch panel according to the ninth embodiment. Figure 32A is a perspective view showing one of the structures of a touch panel according to a tenth embodiment. Fig. 32B is a cross-sectional view showing an example of the structure of the touch panel according to the tenth embodiment; Fig. 33A is a perspective view showing a structural example of one of the touch panels according to the tenth embodiment. 33B is a cross-sectional view showing an example of a structure of a touch panel according to the eleventh embodiment; FIG. 34 is a cross-sectional view showing one example of a structure of a touch panel according to a twelfth embodiment; A cross-sectional view showing one structural example of a liquid crystal display device according to a thirteenth embodiment; and Fig. 36A is a cross-sectional view showing a first example of a structure of a touch panel according to the fourteenth embodiment. Figure 36B is a cross-sectional view showing a second example of the structure of the touch panel according to the fourteenth embodiment; Figure 37A shows an example! A graph of the reflection characteristics in 3 and Comparative Example 1A2. Fig. 37B is a graph showing one of transmission characteristics in Examples 至 3 and Comparative Examples 丨 and 2; Fig. 38A is a graph showing a relationship between an aspect ratio and a surface resistance in Examples 4 to 7. Figure 38B is a graph showing a relationship between a structural height in Examples 4 to 7 and a surface resistance of 150653.doc • 95·201113551;

0 Figure 39B 0 Figure 40B

0 Figure 41B shows a transmission characteristic of Examples 4 to 7 showing a transmission characteristic in Examples 4 to 7; a graph showing the transmission characteristics in Examples 4 and 6 - a graph showing Example 4 and 1 in the reflection characteristics of 6; Fig. 41A shows the transmission characteristics in Examples 3 and 4 - the graph shows the reflection characteristics in Examples 3 and 4; the transmission characteristics in Example 6 is compared with Example 6 Reflection Characteristics in Figure 42A shows Examples 8 to 1 and comparison charts. Figure 42B shows a graph of Examples 8 to 〇 and one; Figure 43 shows Examples 11 and 12 and a graph; a graph of transmission characteristics in Comparative Examples 7 to 9 shows the conductive optical sheets of Examples 13 and 14. Transmission characteristics - chart. Fig. 44B is a graph showing the reflection characteristics of the electroconductive optical sheets of Examples 13 and 14; Fig. 45A is a graph showing the reflection characteristics of Example 15 and Comparative Example 1A. Fig. 45B is a graph showing the reflection characteristics in Example 丨6 and Comparative Example ;; Fig. 46A is a chart showing the reflection characteristics in Example 17 and Comparative Example 12. Fig. 46B is a graph showing one of the reflection characteristics in Example 18 and Comparative Example 13; Fig. 47A is a diagram for explaining one of filling rates when the structures are arranged in a hexagonal lattice pattern. Figure 47B is a diagram for explaining one of the filling rates when the structures are arranged in a square lattice pattern; 150653.doc -96- 201113551 Figure 48 is a diagram showing one of the simulation results of Example 3; Figure 49A A perspective view of one of the resistive touch panels of a comparative example 14 is shown. Fig. 49B is a cross-sectional view showing the structure of the resistive film of Comparative Example 14: a control panel; Fig. 50A is a perspective view showing one of the structures of a resistive film type touch panel of Comparative Example 15. Fig. 50B is a cross-sectional view showing the structure of the resistive film of Comparative Example 15; the structure of the control panel; Fig. 5A shows a perspective view showing one of the structures of a resistive film type touch panel of Comparative Example 16. Figure 51B is a cross-sectional view showing the structure of the resistive film of Comparative Example 16: a control panel; Figure 52A is a perspective view showing the structure of one of the resistive film type touch panels of Example 19. Figure 52B is a cross-sectional view showing the structure of the resistive film type touch panel of Example 19; Figure 53A is a perspective view showing a structure of one of the resistive film type touch panels of Example 2. Figure 53B is a cross-sectional view showing the structure of the resistive film of Example 2; Fig. 54A is a perspective view showing the structure of one of the resistive film type touch panels of Example 21. Figure 54B is a cross-sectional view showing the structure of the resistive film type touch panel of Example 21; and Figure 5 is a perspective view showing the structure of a resistive film type touch panel of Example 22. Figure 55B is a cross-sectional view showing the structure of the resistive film type touch panel of Example 22; Figure 56 is a graph showing the reflection characteristics of the resistive film type touch panels of Examples 19 and 2 and Comparative Example 15; and 150653. Doc • 97· 201113551 Fig. 57 is a schematic view for explaining one of the methods of obtaining the average film thicknesses Dml, Dm2, and Dm3 of the transparent conductive layers formed on the structures each being a convex portion. [Main component symbol description] 1 Conductive optical device 2 Substrate 2a Free space 3 Convex structure 3a Folded portion 3b Lower portion 3t Vertex portion 4 Transparent conductive layer 5 Metal film (conductive film) 6 Projection portion 7 Hard coat layer 8 Transparent conductive layer 9 Protective layer 11 Reel mother board 12 Substrate 13 Structure 14 Photoresist layer 15 Laser light 16 Latent image 21 Laser source 150653.doc -98- 201113551 22 Electro-optic device 23 Mirror 24 Photodiode 25 Modulation optical system 26 Condenser lens 27 Acousto-optic device 28 Lens 29 Formatter 30 Driver 31 Mirror 3ι Oval 32 Moving optical table 32 Oval 33 Beam expander 3b Oval 34 Objective lens 35 Spindle motor 36 Turntable 37 Control mechanism 38 Mirror 41 Disc mother board 42 disc-shaped substrate 43 structure 50 touch panel 150653.doc • 99- 201113551 51 first conductive base material 52 second conductive base material 53 adhesive layer 54 display device 55 bonding layer 56 glass substrate 57 bonding layer 58 polarization benefit 59 front panel 60 bonding layer 61 bonding layer 70 liquid crystal display device 71 wiring layer (liquid Crystal panel) 72 insulating layer (first polarizer) 73 dot spacer (second polarizer) 74 bonding layer 75 bonding layer 100 resistive film type touch panel 101 first conductive base material 102 polyethylene terephthalate Film 103 Indium tin oxide film 104 λ/4 retardation film 111 Second conductive substrate material 112 Glass substrate 150653.doc • 100· 201113551 113 Indium tin oxide film 114 Poly(p-benzoquinone 115 λ/4 retardation film 121 Pressure sensitive Tape 124 Pressure sensitive tape 131 Polarization 132 Antireflective layer a Jointing part a point a2 point a3 point a4 point a5 point a6 point a7 point b joint part c joint part d degree h south degree HI south degree H2 height PI pitch P2 spacing Pa first change point -101 - 150653.doc 201113551

Pb second change r radius St step T1 trace T2 trace T3 trace T4 trace Tp trace spacing Uc unit cell 150653.doc - 102-

Claims (1)

201113551 VII. Patent application scope: L A conductive optical device comprising: a base member; and a transparent conductive film formed on the base member _L, a surface structure of the transparent conductive film comprising a plurality of convex portions, the plural The convex portions have an anti-reflective shell and are disposed at a ratio equal to or less than one wavelength of visible light. A conductive optical device of month 1 wherein the base member comprises a corresponding one. a plurality of convex structures of the convex portions of the transparent conductive film. 3. The conductive optical device of claim 2, wherein the base member is convex. The structure, the assembly is being reflected at an interface between the convex structures and the transparent conductive film to prevent light that has been transmitted through the base member in at least A direction perpendicular to the base member. 4. The conductive optical device of claim 1, further comprising a conductive metal film formed between the substrate member and the transparent conductive film. 5. The conductive optical device of claim 2, wherein one of the convex structures has an aspect ratio ranging from 0.2 to 1 -78. 6. The conductive optical device according to claim 1, wherein a film thickness of the transparent conductive film is in a range from 9 nm to 50 nm. 7. The conductive optical device of claim 2, wherein the transparent conductive film has a film thickness D1 at a vertex portion of the convex structures, and the transparent conductive film is a film at one of the inclined portions of the convex structures The thickness is 〇2, and the film thickness of the transparent conductive film between adjacent convex structures is D3, and D2 and D3 satisfy the relationship of D1 &gt; D3 &gt; D2. 150653.doc 201113551 8. If requested: Member 7's conductive optics, where m is from 25 nm to Μ '丁,米的fe circumference, D2 is from 9 nm to 3 〇 nanometer range And still in the range from 9 nm to 50 nm. 9. The conductive optical device of claim 2, wherein one of the convex structures has an average arrangement pitch ranging from 110 nm to 280 nm. The conductive optical device of claim 2, wherein the convex structures are configured to form a plurality of trace columns. U. The conductive optic of claim 2, wherein the convex structures are configured to form a hexagonal lattice pattern or a quasi-hexagonal lattice pattern. 12. The conductive optical device of claim 1, wherein the convex structures have a pyramid shape or a pyramid shape elongated or contracted in a trace direction. . 13. The conductive optic of claim 12, wherein the pyramid shape is selected from the group consisting of a cone shape, a pyramid shape and an elliptical cone shape, and an elliptical frustum shape . 14. The conductive optic of claim 2, wherein the portions adjacent the convex structures are joined together in an overlapping manner. 15. A touch panel device, comprising: a first conductive substrate layer; and a second conductive substrate layer opposite the first conductive substrate layer, wherein the first conductive substrate layer and the second conductive substrate At least one of the layers includes a base member, and a transparent conductive film 'which is formed on the base member, the transparent conductive 150653.doc - 201113551 film-surface structure comprising anti-reflective properties and being equal to or less than visible light A plurality of convex structures arranged at one pitch of one wavelength. 16. The touch panel device of claim 15, wherein the base member comprises a plurality of convex structures corresponding to the convex portions of the transparent conductive film. 17. The touch panel device of claim 16, wherein the convex structures of the base member mx prevent light that has been transmitted through the base member in a direction at least substantially perpendicular to one of the base members in the convex structure. Reflected at an interface between the transparent conductive films. 18. The touch panel device of claim 15 which further comprises a conductive metal crucible between the substrate member and the transparent conductive film. 19. The touch panel device of claim 16, wherein one of the convex structures has an aspect ratio ranging from 0.2 to 1.78. 20. The touch panel device of claim 15, wherein a film thickness of the transparent conductive film is in a range from 9 nm to 50 nm. 21. The touch panel device of claim 16, wherein the transparent conductive film has a film thickness of 〇1 at one of the apex portions of the convex structures, and the transparent conductive film is at the inclined portion of the convex structures A film thickness is, for example, and the film thickness of the transparent conductive film between adjacent convex structures is out, and (1), D2, and D3 satisfy the relationship of D1 &gt; D3 &gt; D2. 22. The touch panel device of claim 21, wherein the m is between. In the range of nanometers to 50 nanometers, the 〇2 series is in the range from 9 nm to 3 nautical meters and the D3 system is in the range from 9 nm to 50 nm. 23. The touch panel device of claim 16, wherein the mean pitch configuration is between 110 nm and 28 nm. The method of claim 16, wherein the convex portions are configured to form a plurality of trace columns. 25. The touch panel device of claim 16, wherein the convex portions are configured to form a hexagonal lattice pattern or a quasi-hexagonal lattice pattern. 26. The touch panel device of claim 24, wherein the convex portions have a pyramid shape or a pyramid shape elongated or contracted in a - trace direction. 27. The touch panel device of claim 26, wherein the pyramid shape is selected from the group consisting of: a cone shape, a frustum shape and an elliptical cone shape, and an elliptical frustum shape. 28. The touch panel device of claim 16, wherein the portions below the adjacent convex structures are joined together in an overlapping manner. 29. A display device comprising: a display device; and a touch panel device attached to the display device, the touch panel device comprising a first conductive substrate layer; and a second conductive substrate layer Opposite the first conductive substrate layer, wherein at least one of the first conductive substrate layer and the second conductive substrate layer comprises a base member, and a transparent conductive film is formed on the base member, the transparent One surface structure of the conductive film includes a plurality of convex structures having anti-reflection properties and being disposed at a pitch equal to or smaller than one of wavelengths of visible light. The display device of claim 29, wherein the base member comprises a plurality of convex portions corresponding to the convex portions of the transparent conductive film. structure. The display device of claim 30, wherein the convex structures of the base member are configured to prevent light that has been transmitted through the s-base member in at least substantially perpendicular to one of the base members in the convex structure and Reflected at an interface between the transparent conductive films. The display device of claim 29, further comprising a conductive metal film between the base member and the transparent conductive film. The display device of claim 30, wherein one of the convex structures has an aspect ratio ranging from 0.2 to 1.78. The display device of claim 29, wherein a film thickness of the transparent conductive film is in a range from 9 nm to 50 nm. The display device of claim 30, wherein the transparent conductive film has a film thickness D1 at one of the apex portions of the convex structures, and the film thickness of the transparent conductive film at one of the inclined portions of the convex structures is D2 And the transparent conductive film has a film thickness D3 between adjacent convex structures, and m, and D3 satisfy the relationship of D1 &gt; D3 &gt; D2. The display device of claim 35, wherein the D1 system is in the range from nanometer to 5 nanometers, the D2 system is in the range from 9 nanometers to 3 nanometers, and the 〇3 system is in the range from 9 nanometers. Meters to 50 nanometers. The display device of claim 30, wherein one of the convex structures has an average configuration pitch ranging from 110 nm to 28 nm. The display device of claim 30, wherein the convex portions are configured to form a plurality of trace columns. The display device of claim 3, wherein the convex portions are configured to form a hexagonal lattice pattern or a quasi-hexagonal lattice pattern. 40. The display device of claim 38, wherein the convex portions have a pyramid shape or a pyramid shape that is elongated or contracted in a trace direction. 41. The display device of claim 4, wherein the pyramid shape is selected from the group consisting of a cone shape, a frustum shape and an elliptical cone shape, and an elliptical frustum shape . 42. The display device of claim 3, wherein the portions adjacent to the underlying features are joined together in an overlapping manner. 43. A method of fabricating a conductive optical device, the method comprising: forming a base member comprising a plurality of convex structures; and forming a transparent conductive film on the base member such that a surface structure of the transparent conductive film comprises And a plurality of convex portions corresponding to the convex structures of the base member, wherein the convex structures have anti-reflective properties and are disposed at a pitch equal to or smaller than one of wavelengths of visible light. 44. The method of manufacturing a conductive optical device according to claim 43, wherein the base member comprises: providing a reel master having a plurality of concave structures; applying a transfer material to a substrate; and causing the substrate and the reel Contacting the mother substrate; curing the transfer material; and peeling the cured transfer material and the substrate from the roll master, wherein the concave structures of the roll master correspond to the base member I50653.doc -6 - 201113551 Equal convex structure. A transparent conductive film having a surface structure comprising a plurality of convex portions, wherein the convex portions have anti-reflection characteristics and are disposed at a pitch equal to or smaller than one of wavelengths of visible light. 46. The transparent conductive film of claim 45, wherein the transparent conductive film comprises at least one material selected from the group consisting of Ting's 'Az〇, SZO, FTO, Sn02, GZO and ΙΖΟ. The transparent conductive member 47. The transparent conductive film of claim 45, further comprising a metal film as one of the underlying layers of the electric film. ‘ 150653.doc