JP2013041878A - Imaging apparatus and camera module - Google Patents

Imaging apparatus and camera module Download PDF

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JP2013041878A
JP2013041878A JP2011176125A JP2011176125A JP2013041878A JP 2013041878 A JP2013041878 A JP 2013041878A JP 2011176125 A JP2011176125 A JP 2011176125A JP 2011176125 A JP2011176125 A JP 2011176125A JP 2013041878 A JP2013041878 A JP 2013041878A
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conductive film
transparent conductive
optical element
element area
substrate
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Yumi Suzuki
優美 鈴木
Yoshihito Higashitsutsumi
良仁 東堤
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Sony Corp
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Sony Corp
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Priority to JP2011176125A priority Critical patent/JP2013041878A/en
Priority to US13/566,401 priority patent/US9343597B2/en
Priority to CN2012102869120A priority patent/CN102956621A/en
Publication of JP2013041878A publication Critical patent/JP2013041878A/en
Priority to US15/138,887 priority patent/US9735115B2/en
Priority to US15/645,572 priority patent/US10658301B2/en
Priority to US16/849,861 priority patent/US11387189B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
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    • H01L27/14636—Interconnect structures
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    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
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    • H01L27/14601—Structural or functional details thereof
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Abstract

PROBLEM TO BE SOLVED: To provide an imaging apparatus and a camera module which sufficiently achieve EMC effect and EMI effect while preventing the size increase of a module, the complication of the processes, and the cost increase.SOLUTION: An imaging apparatus includes: an optical device 110 where an optical element area 112 for receiving light is formed on a first surface 111a side of a substrate 111 and an external connection terminal 170 is formed at a second surface 111b side which is opposite to the first surface 111a of the substrate; a transparent conductive film 130 formed so as to face the first surface 111a of the substrate 111; an electrode pad 140 formed on the first surface 111a of the substrate 111 and used for connecting with fixed potential; and a through electrode 160 connecting with the electrode pad 140 and formed so as to penetrate through the first surface 111a and the second surface 111b of the substrate. The transparent conductive film 130 connects with the electrode pad 140 and the through electrode 160 connects with the external connection terminal 170 at the second surface 111b side of the substrate.

Description

本技術は、ＣＣＤやＣＭＯＳイメージセンサ（ＣＩＳ）等の光学センサがチップスケールのパッケージとして構成される撮像装置およびカメラモジュールに関するものである。   The present technology relates to an imaging apparatus and a camera module in which an optical sensor such as a CCD or a CMOS image sensor (CIS) is configured as a chip scale package.

光学センサの簡易なパッケージ方法として、ウエハチップスケールパッケージ（Wafer Chip Scale Package；WCSP)構造が提案されている。   As a simple packaging method for an optical sensor, a wafer chip scale package (WCSP) structure has been proposed.

図１は、ＷＣＳＰ構造の基本的な構成を示す図である。
ＷＣＳＰ構造１は、光学センサ（センサチップ）である光学デバイス２の前面の受光部である光学素子エリア２１の上部を保護するためのシール材としてのシールガラス（カバーガラス）３が配置される。
ＷＣＳＰ構造１においては、光学デバイス２の光学素子エリア（受光部）２１を除く周縁部において樹脂４を介してシールガラス３が配置されている。したがって、ＷＣＳＰ構造１では、光学デバイス２の受光部２１とシールガラス３の光学素子エリア（受光部）２１との対向面３１との間に空隙５が形成される。 FIG. 1 is a diagram showing a basic configuration of a WCSP structure.
In the WCSP structure 1, a seal glass (cover glass) 3 is disposed as a seal material for protecting an upper portion of an optical element area 21 that is a light receiving unit on the front surface of an optical device 2 that is an optical sensor (sensor chip).
In the WCSP structure 1, the seal glass 3 is disposed through the resin 4 at the peripheral edge portion except the optical element area (light receiving portion) 21 of the optical device 2. Therefore, in the WCSP structure 1, the gap 5 is formed between the light receiving portion 21 of the optical device 2 and the facing surface 31 of the optical element area (light receiving portion) 21 of the seal glass 3.

このＣＳＰ構造は、センサチップの前面と裏面間を貫通する貫通ビア（TSV；Thru Silicon Via)により電極６を形成することでワイヤーボンドによる配線を失くしクリーンルーム内においてウエハ状態でガラスを貼り合わせることができる。
このため、従来のＣＯＢ(Chip On Board)タイプのパッケージと比較し、小型化、低コスト化、ダストレス化が期待できる。 In this CSP structure, the electrode 6 is formed by a through via (TSV; Thru Silicon Via) penetrating between the front surface and the back surface of the sensor chip, so that the wire bond is lost and the glass is bonded in a wafer state in a clean room. Can do.
For this reason, compared with the conventional COB (Chip On Board) type package, a reduction in size, cost reduction, and reduction in dust can be expected.

図２は、ＷＣＳＰ構造の他の構成を示す図である。
図２のＷＣＳＰ構造１Ａは、図１のＷＣＳＰ構造１における上記空隙５を樹脂４で埋めて空隙を持たないＷＣＳＰ構造として構成されている。
以下、この空隙を持たないＷＣＳＰ構造を、キャビティレス(Cavity less)ＷＣＳＰ構造という場合もある。 FIG. 2 is a diagram showing another configuration of the WCSP structure.
A WCSP structure 1A in FIG. 2 is configured as a WCSP structure in which the gap 5 in the WCSP structure 1 in FIG.
Hereinafter, this WCSP structure having no gap may be referred to as a cavity less WCSP structure.

この空隙を持たないキャビティレスＣＳＰ構造を採用することにより、空隙を持つＣＳＰ構造の空隙内で発生していた熱応力を大幅に低減することで反りの発生を抑えることができる。
さらに、キャビティレスＣＳＰ構造は、光学的にも空隙（屈折率１）の界面で生じていた反射を屈折率が約１．５の樹脂で抑制することができるため光学デバイス２における受光量増大も期待することができる。 By adopting the cavityless CSP structure having no voids, the occurrence of warpage can be suppressed by significantly reducing the thermal stress generated in the voids of the CSP structure having voids.
Furthermore, since the cavityless CSP structure can optically suppress reflection occurring at the interface of the air gap (refractive index 1) with a resin having a refractive index of about 1.5, the amount of received light in the optical device 2 is also increased. You can expect.

ところで、ＣＣＤやＣＭＯＳイメージセンサのＷＣＳＰによるレンズ一体型カメラモジュールでは、電磁感受性（EMS：Electro Magnetic Susceptibility）、あるいは、電磁環境両立性（EMC: Electro Magnetic Compatibility）の機能を備える必要がある。
ＥＭＳは、カメラモジュールの近くにある他の機器の放射電磁場や、雷、太陽活動などといった自然現象が電気機器の動作を阻害し、システムの機能低下、誤作動等の影響を及ぼす外的要因から守る機能である。
ＥＭＣは、カメラモジュール自身が他の機器の動作を阻害したり、人体に影響を与える一定レベル以上の干渉源となる電磁妨害（EMI: Electro Magnetic Interference） を生じさせないための機能である。 By the way, a lens-integrated camera module using a CCD or CMOS image sensor WCSP needs to have a function of electromagnetic sensitivity (EMS: Electro Magnetic Susceptibility) or electromagnetic environment compatibility (EMC: Electro Magnetic Compatibility).
EMS is based on external factors such as radiated electromagnetic field of other devices near the camera module, natural phenomena such as lightning, solar activity, etc., which hinders the operation of electrical devices and affects system functions and malfunctions. It is a function to protect.
EMC is a function that prevents the camera module itself from interfering with the operation of other devices or causing electromagnetic interference (EMI) that becomes an interference source of a certain level or more that affects the human body.

このＥＭＳやＥＭＣの機能を備えた撮像装置やカメラモジュールが提案されている（たとえば特許文献１，２，３参照）。   An image pickup apparatus and a camera module having the EMS and EMC functions have been proposed (see, for example, Patent Documents 1, 2, and 3).

特許文献１に記載の撮像装置は、画素領域を含み、周縁にウエルが形成された撮像素子チップと、撮像チップに配置され、撮像素子チップのウエルと電気的に接続されたメタルシールドとを有している。   The imaging device described in Patent Document 1 includes an imaging element chip that includes a pixel region and has a well formed on the periphery, and a metal shield that is disposed on the imaging chip and is electrically connected to the well of the imaging element chip. doing.

特許文献２に記載のカメラモジュールは、光学デバイスおよびシールドガラスの周囲に遮光兼電磁シールドが配置されている。   In the camera module described in Patent Document 2, a light shielding / electromagnetic shield is disposed around the optical device and the shield glass.

特許文献３に記載のカメラモジュールは、カメラモジュールの側面全体を覆う金属蒸着膜を有している。   The camera module described in Patent Document 3 has a metal vapor deposition film that covers the entire side surface of the camera module.

特開２０１０‐２８３５９７号公報JP 2010-283597 A 特開２００９‐１５８８６３号公報JP 2009-158863 A 特開２０１０‐１１２３０号公報JP 2010-11230 A

しかし、年々の電子機器の小型化要求に伴い、特許文献１や２に記載された、カメラモジュールの外側にメタルシールドを取り付けるような構造であると、モジュールが大きく、製造工程も複雑になり、材料コストも高くなってしまう。
また、特許文献３に記載されたような構造であると、レンズ一体型カメラモジュールを覆う金属蒸着膜が電気的にフローティングとなり、ＥＭＣ効果が弱まってしまう。 However, with the demand for downsizing electronic devices year by year, the structure described in Patent Documents 1 and 2 is such that a metal shield is attached to the outside of the camera module, the module is large, and the manufacturing process becomes complicated. Material costs will also increase.
Moreover, if it is a structure as described in patent document 3, the metal vapor deposition film which covers a lens integrated camera module will become an electric floating, and the EMC effect will become weak.

本技術は、モジュールの大型化、工程の複雑化、コスト増大を防止しつつ、ＥＭＣやＥＭＩ効果を十分に発現させることが可能な撮像装置およびカメラモジュールを提供することにある。   It is an object of the present technology to provide an imaging apparatus and a camera module capable of sufficiently producing an EMC or EMI effect while preventing an increase in the size of a module, a complicated process, and an increase in cost.

本技術の第１の観点の撮像装置は、基板の第１面側に受光するための光学素子エリアが形成され、上記基板の上記第１面と反対側の第２面側に外部接続端子が形成された光学デバイスと、上記基板の第１面と対向するように形成された透明導電性膜と、上記基板の第１面に形成されて固定電位に接続するための電極パッドと、上記電極パッドに接続されて、上記基板の第１面と第２面を貫通するように形成された貫通電極と、を有し、上記透明導電性膜が上記電極パッドに接続され、上記貫通電極が上記基板の上記第２面側で上記外部接続端子に接続されている。   In the imaging device according to the first aspect of the present technology, an optical element area for receiving light is formed on the first surface side of the substrate, and an external connection terminal is provided on the second surface side opposite to the first surface of the substrate. The formed optical device, a transparent conductive film formed to face the first surface of the substrate, an electrode pad formed on the first surface of the substrate and connected to a fixed potential, and the electrode A through electrode connected to the pad and formed to penetrate the first surface and the second surface of the substrate, the transparent conductive film is connected to the electrode pad, and the through electrode is It is connected to the external connection terminal on the second surface side of the substrate.

本技術の第２の観点のカメラモジュールは、受光するための光学素子エリアを含む撮像装置と、上記撮像装置の上記光学素子エリアに被写体像を結像するレンズと、を有し、上記撮像装置は、基板の第１面側に受光するための光学素子エリアが形成され、上記基板の上記第１面と反対側の第２面側に外部接続端子が形成された光学デバイスと、上記基板の第１面と対向するように形成された透明導電性膜と、上記基板の第１面に形成されて固定電位に接続するための電極パッドと、上記電極パッドに接続されて、上記基板の第１面と第２面を貫通するように形成された貫通電極と、を含み、上記透明導電性膜が上記電極パッドに接続され、上記貫通電極が上記基板の上記第２面側で上記外部接続端子に接続されている。   A camera module according to a second aspect of the present technology includes an imaging device including an optical element area for receiving light, and a lens that forms a subject image on the optical element area of the imaging device. Includes an optical element area for receiving light on the first surface side of the substrate, an optical device having an external connection terminal formed on the second surface side opposite to the first surface of the substrate, and the substrate. A transparent conductive film formed to face the first surface; an electrode pad formed on the first surface of the substrate for connecting to a fixed potential; and connected to the electrode pad, The transparent conductive film is connected to the electrode pad, and the through electrode is connected to the external connection on the second surface side of the substrate. Connected to the terminal.

本技術によれば、モジュールの大型化、工程の複雑化、コスト増大を防止しつつ、ＥＭＣやＥＭＩ効果を十分に発現させることができる。   According to the present technology, it is possible to sufficiently exhibit the EMC and EMI effects while preventing an increase in the size of a module, a complicated process, and an increase in cost.

ＷＣＳＰ構造の基本的な構成を示す図である。It is a figure which shows the basic composition of a WCSP structure. 空隙を持たないＷＣＳＰ構造の構成を示す図である。It is a figure which shows the structure of the WCSP structure which does not have a space | gap. 本実施形態に係る撮像装置の第１の構成例を示す図である。It is a figure which shows the 1st structural example of the imaging device which concerns on this embodiment. 本実施形態に係るカラーフィルタの構成例を示す図である。It is a figure which shows the structural example of the color filter which concerns on this embodiment. 本実施形態に係る撮像装置の第２の構成例を示す図である。It is a figure which shows the 2nd structural example of the imaging device which concerns on this embodiment. 本実施形態に係る撮像装置の第３の構成例を示す図である。It is a figure which shows the 3rd structural example of the imaging device which concerns on this embodiment. 本実施形態に係る撮像装置の第４の構成例を示す図である。It is a figure which shows the 4th structural example of the imaging device which concerns on this embodiment. 本実施形態に係る撮像装置の第５の構成例を示す図である。It is a figure which shows the 5th structural example of the imaging device which concerns on this embodiment. 本実施形態に係るカメラモジュールの構成例を示す図である。It is a figure which shows the structural example of the camera module which concerns on this embodiment.

以下、本実施形態を図面に関連付けて説明する。
なお、説明は以下の順序で行う。
１．撮像装置の第１の構成例
２．撮像装置の第２の構成例
３．撮像装置の第３の構成例
４．撮像装置の第４の構成例
５．撮像装置の第５の構成例
６．カメラモジュールの構成例 Hereinafter, this embodiment will be described with reference to the drawings.
The description will be given in the following order.
1. 1. First configuration example of imaging apparatus Second Configuration Example of Imaging Device 3. 3. Third configuration example of imaging device 4. Fourth configuration example of imaging device 5. Fifth configuration example of imaging device Configuration example of camera module

＜１．撮像装置の第１の構成例＞
図３（Ａ）および（Ｂ）は、本実施形態に係る撮像装置の第１の構成例を示す図である。
図３（Ａ）は基板の第１面側に透明導電性膜が配置されている構成例を示す平面図であり、図３（Ｂ）は撮像装置の全体的な構成を示す簡略側面図である。
本実施形態においては、光学デバイス（光学センサ）としては一例としてＣＭＯＳイメージセンサ（ＣＩＳ：CMOS Image Sensor)が適用される。 <1. First Configuration Example of Imaging Device>
3A and 3B are diagrams illustrating a first configuration example of the imaging apparatus according to the present embodiment.
FIG. 3A is a plan view illustrating a configuration example in which a transparent conductive film is disposed on the first surface side of the substrate, and FIG. 3B is a simplified side view illustrating the overall configuration of the imaging apparatus. is there.
In the present embodiment, a CMOS image sensor (CIS: CMOS Image Sensor) is applied as an example of the optical device (optical sensor).

本実施形態の撮像装置１００は、基本的に、光学センサチップサイズでパッケージするＷＣＳＰ構造を有する。
本撮像装置１００は、光学デバイスの光学素子エリア（受光部）とシールガラスの受光部との対向面との間に空隙が形成されるキャビディ構造、空隙を持たないキャビティレスＣＳＰ構造のいずれの構造も採用することができる。
本実施形態において、第１面（前面）とは撮像装置の光学センサである光学デバイスの受光部が形成された被写体の像光の入射側をいい、第２面（裏面）とは光入射が行われず、バンプ等の接続電極やインターポーザー等が配置される第１面と反対の面側をいう。 The imaging apparatus 100 of this embodiment basically has a WCSP structure that is packaged in an optical sensor chip size.
The imaging apparatus 100 has either a cavity structure in which a gap is formed between the optical element area (light receiving portion) of the optical device and the facing surface of the light receiving portion of the seal glass, or a cavityless CSP structure having no gap. Can also be adopted.
In the present embodiment, the first surface (front surface) refers to the incident side of the image light of the subject on which the light receiving portion of the optical device that is the optical sensor of the imaging apparatus is formed, and the second surface (back surface) refers to the light incident. The surface side opposite to the first surface on which connection electrodes such as bumps, interposers and the like are disposed is not performed.

撮像装置１００は、光学デバイス１１０、シール材１２０、中間層として透明導電性膜１３０、電極パッド１４０（−１〜−４）、外部接続端子としての他の接続パッド１５０、貫通電極１６０（−１，−２）、および外部接続端子１７０を有する。   The imaging apparatus 100 includes an optical device 110, a sealing material 120, a transparent conductive film 130 as an intermediate layer, electrode pads 140 (-1 to -4), other connection pads 150 as external connection terminals, and through electrodes 160 (-1). , -2), and an external connection terminal 170.

本実施形態において、電極パッド１４０は固定電位（本例ではグランド電位）に接続するためのグランド端子用パッドである。
本実施形態において、後で詳述するように、透明導電性膜１３０は電極パッド１４０に接続され、電極パッドに接続された貫通電極１６０を介して外部接続端子１７０に接続され、この外部接続端子１７０が外部の基準電位（グランド電位）に接続される。
これにより、透明導電性膜１３０は光学素子エリアの保護膜としての機能に加えて、シールド材として機能する。 In the present embodiment, the electrode pad 140 is a ground terminal pad for connection to a fixed potential (a ground potential in this example).
In this embodiment, as will be described in detail later, the transparent conductive film 130 is connected to the electrode pad 140 and is connected to the external connection terminal 170 through the through electrode 160 connected to the electrode pad. 170 is connected to an external reference potential (ground potential).
Thereby, the transparent conductive film 130 functions as a shield material in addition to the function as a protective film in the optical element area.

なお、透明導電性膜１３０およびシール材１２０は、光を透過する光に対して透明な材料により形成され、これらの屈折率は空気の屈折率より高く、たとえばシールド材１２０は屈折率１．５程度の材料により形成される。
また、図３の構成において、シール材１２０はガラスにより形成される例を示しており、シール材１２０をシールガラスあるいはカバーガラスという場合もある。 The transparent conductive film 130 and the sealing material 120 are formed of a material that is transparent to light that transmits light. Their refractive index is higher than that of air. For example, the shielding material 120 has a refractive index of 1.5. It is formed of a material of a degree.
3 shows an example in which the sealing material 120 is formed of glass, and the sealing material 120 may be referred to as sealing glass or cover glass.

光学デバイス１１０は、センサ基板１１１の第１面（前面）１１１ａ側に受光部として機能する光学素子エリア１１２が形成され、第２面（裏面）１１１ｂ側にバンプ等の外部との接続用電極である外部接続端子１７０が形成されている。
光学デバイス１１０において、センサ基板１１１の第１面１１１ａ側の側部（図３では左右の両側部）に電極パッド１４０（−１〜−４）およびその他の接続パッド１５０が形成されている。
光学デバイス１１０において、センサ基板１１１の第１面１１１ａにおける光学素子エリア１１２のフィルタ部分を除く領域には絶縁膜１１３が形成されている。
電極パッド１４０は、センサ基板１１１の第１面１１１ａ側において、透明導電性膜１３０に電気的に接続されるように絶縁膜１１３に埋め込まれるように開口し露出するように形成されている。
光学デバイス１１０のセンサ基板１１１の第１面１１１ａに形成される外部接続端子としての接続パッド１５０は、ワイヤーボンディングパッドとして開口されていてもよいし、開口されていなくても良い。また、光学デバイス１１０内の積層配線の最上層のメタル層でなくても良い。
なお、開口とは、絶縁膜１１３が除去されてパッドが露出し、直接的に接続可能な状態をいう。 In the optical device 110, an optical element area 112 that functions as a light receiving portion is formed on the first surface (front surface) 111a side of the sensor substrate 111, and an external connection electrode such as a bump is formed on the second surface (back surface) 111b side. A certain external connection terminal 170 is formed.
In the optical device 110, electrode pads 140 (−1 to −4) and other connection pads 150 are formed on the side portion of the sensor substrate 111 on the first surface 111 a side (right and left side portions in FIG. 3).
In the optical device 110, an insulating film 113 is formed in a region excluding the filter portion of the optical element area 112 on the first surface 111 a of the sensor substrate 111.
The electrode pad 140 is formed on the first surface 111 a side of the sensor substrate 111 so as to be opened and exposed so as to be embedded in the insulating film 113 so as to be electrically connected to the transparent conductive film 130.
The connection pad 150 as an external connection terminal formed on the first surface 111a of the sensor substrate 111 of the optical device 110 may be opened as a wire bonding pad or may not be opened. Further, the uppermost metal layer of the laminated wiring in the optical device 110 may not be used.
Note that the opening means a state where the insulating film 113 is removed and the pad is exposed and can be directly connected.

光学デバイス１１０において、センサ基板１１１の第１面１１１ａと第２面１１１ｂを貫通する貫通ビア（TSV；Thru Silicon Via)１１４により貫通電極１６０（−１〜−２）が形成されている。これにより、ワイヤーボンドによる配線を失くしクリーンルーム内においてウエハ状態でガラスを貼り合わせることができる。
貫通電極１６０（−１〜−４）は、センサ基板１１１の第２面１１１ｂ側において、配線１１５により外部の基準電位（グランド電位）に接続される外部接続端子１７０に接続されている。 In the optical device 110, through electrodes 160 (-1 to -2) are formed by through vias (TSV; Thru Silicon Via) 114 penetrating the first surface 111a and the second surface 111b of the sensor substrate 111. Thereby, the wiring by a wire bond is lost and glass can be bonded together in a wafer state in a clean room.
The through electrode 160 (-1 to -4) is connected to the external connection terminal 170 connected to the external reference potential (ground potential) by the wiring 115 on the second surface 111b side of the sensor substrate 111.

受光部としての光学素子エリア１１２は、センサ基板１１１の第１面１１１ａに形成されており、複数の画素（受光素子）がマトリクス状に配置された受光面（画素アレイ部）１１２１を有する。
光学素子エリア１１２には、画素アレイ部１１２１のさらに前面側にカラーフィルタ１１２２が形成されている。
カラーフィルタ１１２２は、色の３原色であるＲ（赤）、Ｇ（緑）、Ｂ（青）のカラーフィルタが、たとえば図４に示すように、ベイヤー（Ｂａｙｅｒ）配列をもってオンチップカラーフィルタ（ＯＣＣＦ）としてアレイ状に形成されている。ただし、カラーフィルタの配置パターンはベイヤーパターンに限る必要はない。
なお、図４の例では、カラーフィルタ１１２２に重なるように、赤外カットフィルタ（ＩＲＣＦ：InfraRed Cutoff Filter）１８０が形成されている。 The optical element area 112 as a light receiving portion is formed on the first surface 111a of the sensor substrate 111, and has a light receiving surface (pixel array portion) 1121 in which a plurality of pixels (light receiving elements) are arranged in a matrix.
In the optical element area 112, a color filter 1122 is formed on the further front side of the pixel array section 1121.
The color filter 1122 includes R (red), G (green), and B (blue) color filters, which are the three primary colors, having an on-chip color filter (OCCF) as shown in FIG. ) As an array. However, the arrangement pattern of the color filter is not necessarily limited to the Bayer pattern.
In the example of FIG. 4, an infrared cut filter (IRCF) 180 is formed so as to overlap the color filter 1122.

光学素子エリア１１２は、カラーフィルタ１１２２のさらに前面側に各画素に入射光を集光するためのマイクロレンズアレイ１１２３が配置されている。
光学素子エリア１１２は、このマイクロレンズアレイ１１２３のさらに前面側に、たとえば反射防止膜等が形成される。 In the optical element area 112, a microlens array 1123 for condensing incident light on each pixel is arranged on the further front side of the color filter 1122.
In the optical element area 112, for example, an antireflection film or the like is formed on the front side of the microlens array 1123.

透明導電性膜１３０は、上記構成を有する光学素子エリア１１２が形成されたセンサ基板１１１の第１面１１１ａと、シール材（シールガラス）１２０の第１面１１１ａとの対向面１２１間に充填するように形成されている。
すなわち、本第１の実施形態の撮像装置１００は、いわゆるキャビティレス構造として形成されている。
なお、透明導電性膜１３０の厚さはたとえば５０μｍ程度に設定される。また、シールガラス１２０の厚さはたとえば４５０〜５００μｍ程度に設定される。 The transparent conductive film 130 is filled between the opposing surfaces 121 of the first surface 111a of the sensor substrate 111 on which the optical element area 112 having the above configuration is formed and the first surface 111a of the sealing material (seal glass) 120. It is formed as follows.
That is, the imaging device 100 of the first embodiment is formed as a so-called cavityless structure.
The thickness of the transparent conductive film 130 is set to about 50 μm, for example. Further, the thickness of the seal glass 120 is set to about 450 to 500 μm, for example.

透明導電性膜１３０は、たとえばＩＴＯ（Indium Tin Oxide）、ＺｎＯ２（Zinc peroxid：過酸化亜鉛）等、導電性粒子を散布させた透明有機膜等により形成される。
透明導電性膜１３０は、光学デバイス１１１０のセンサ基板１１１の第１面１１１ａに形成される外部接続端子としての接続パッド１５０が、ワイヤーボンディング用パッドとして開口されている場合、図３（Ａ）に示すような形状にパターニングされる。
すなわち、透明導電性膜１３０は、ワイヤーボンディング用パッドが透明導電性膜に電気的に接続されないように（接触しないように）、透明導電性膜１３０の一部を除去した切り欠き部１３１−１，１３１−２を有するようにパターニングされる。 The transparent conductive film 130 is formed of a transparent organic film or the like in which conductive particles are dispersed, such as ITO (Indium Tin Oxide) or ZnO 2 (Zinc peroxid).
When the connection pad 150 as an external connection terminal formed on the first surface 111a of the sensor substrate 111 of the optical device 1110 is opened as a wire bonding pad, the transparent conductive film 130 is shown in FIG. Patterned as shown.
That is, the transparent conductive film 130 has a notch portion 131-1 from which a part of the transparent conductive film 130 is removed so that the wire bonding pad is not electrically connected to the transparent conductive film. , 131-2.

また、本第１の実施形態において、透明導電性膜１３０は、光学素子エリア１１２を覆うように形成されているが、光学デバイス１１０と電気的に接続されて影響を及ぼす部分は、電気的に非接続となるように形成される。
光学デバイス１１０側で透明導電性膜１３０と非接続となるように、センサ基板１１１の第１面１１１ａにおける光学素子エリア１１２を除く領域に絶縁膜１１３が形成される。あるいは、光学デバイス１１０において電気的に接続されて影響を及ぼす部分を避けるように透明導電性膜１３０がパターニングされる。 In the first embodiment, the transparent conductive film 130 is formed so as to cover the optical element area 112, but the portion that is electrically connected to the optical device 110 and has an influence is electrically It is formed so as to be disconnected.
An insulating film 113 is formed in a region excluding the optical element area 112 on the first surface 111a of the sensor substrate 111 so as not to be connected to the transparent conductive film 130 on the optical device 110 side. Alternatively, the transparent conductive film 130 is patterned so as to avoid a portion that is electrically connected and affects the optical device 110.

以上の構成を有する撮像装置１００は、基本的に次のようにして製造される。
光学デバイス１１０はウエハレベルで透明導電性膜１３０を光学的に透明な接着剤により光学デバイス１１０と同サイズのガラス１２０と貼り合わされる。
その後、光学デバイス１１０の光学素子エリア１１２が形成された第１面とは反対側の第２面側のシリコンを、貫通電極１６０を形成が可能な厚みまで薄く削る。
そして、外部接続端子１７０と接続される貫通電極１６０を形成のための貫通孔１１４を形成し、絶縁膜１１３を形成し、さらに再配線１１５を形成、保護膜１１６を形成した後に各光学デバイス１１０のサイズに個片化され、光学デバイスのＷＣＳＰが完成される。 The imaging apparatus 100 having the above configuration is basically manufactured as follows.
In the optical device 110, the transparent conductive film 130 is bonded to the glass 120 having the same size as the optical device 110 with an optically transparent adhesive at the wafer level.
Thereafter, the silicon on the second surface side opposite to the first surface on which the optical element area 112 of the optical device 110 is formed is thinned to a thickness that allows the through electrode 160 to be formed.
Then, the through hole 114 for forming the through electrode 160 connected to the external connection terminal 170 is formed, the insulating film 113 is formed, the rewiring 115 is further formed, and the protective film 116 is formed, and then each optical device 110 is formed. The optical device WCSP is completed.

本実施形態の撮像装置１００は、透明導電性膜１３０は電極パッド１４０に接続され、電極パッド１４０に接続された貫通電極１６０を介して外部接続端子１７０に接続され、この外部接続端子１７０が外部の基準電位（グランド電位）に接続される。
これにより、透明導電性膜１３０は光学素子エリアの保護膜としての機能に加えて、シールド材として機能し、光学デバイス１１０がＥＭＣ（Electro-Magnetic Compatibility）シールドに覆われている。 In the imaging apparatus 100 according to the present embodiment, the transparent conductive film 130 is connected to the electrode pad 140, and is connected to the external connection terminal 170 via the through electrode 160 connected to the electrode pad 140, and the external connection terminal 170 is externally connected. To the reference potential (ground potential).
Thus, the transparent conductive film 130 functions as a shield material in addition to the function as a protective film for the optical element area, and the optical device 110 is covered with an EMC (Electro-Magnetic Compatibility) shield.

＜２．撮像装置の第２の構成例＞
図５（Ａ）および（Ｂ）は、本実施形態に係る撮像装置の第２の構成例を示す図である。
図５（Ａ）は基板の第１面側に透明導電性膜が配置されている構成例を示す平面図であり、図５（Ｂ）は撮像装置の全体的な構成を示す簡略側面図である。 <2. Second Configuration Example of Imaging Device>
FIGS. 5A and 5B are diagrams illustrating a second configuration example of the imaging apparatus according to the present embodiment.
FIG. 5A is a plan view illustrating a configuration example in which a transparent conductive film is disposed on the first surface side of the substrate, and FIG. 5B is a simplified side view illustrating the overall configuration of the imaging apparatus. is there.

本第２の実施形態に係る撮像装置１００Ａが第１の実施系形態に係る撮像装置１００と異なる点は次の通りである。
第２の実施形態に係る撮像装置１００Ａは、透明導電性膜１３０Ａがサブミクロンオーダー（たとえば１００μｍ〜５００μｍ）の周期的な凹凸を持つ微細構造パターンにより光学特性を示すモスアイ（蛾の目）構造ＭＥＹを有するにように形成されている。 The imaging device 100A according to the second embodiment is different from the imaging device 100 according to the first embodiment as follows.
In the imaging apparatus 100A according to the second embodiment, the transparent conductive film 130A has a moth-eye (brown eye) structure MEY that exhibits optical characteristics by a fine structure pattern having periodic unevenness on the submicron order (for example, 100 μm to 500 μm) It is formed to have.

透明導電性膜１３０Ａにモスアイ構造を採用する理由を以下に示す。
一般的な透明導電性膜として用いられるＩＴＯやＺｎＯ２は屈折率が１．９〜２．０と高いので、平坦な構造で形成すると、反射が大きくなり、光学特性が低下するおそれがある。
そこで、本第２の実施形態においては、反射が大きくなり光学特性が低下することを避けるためにモスアイ構造を採用している。
また、このときの光学素子材料の屈折率は可能な限り高い方が望ましく、少なくとも１．６以上は必要である。 The reason why the moth-eye structure is adopted for the transparent conductive film 130A will be described below.
ITO or ZnO 2 used as a general transparent conductive film has a high refractive index of 1.9 to 2.0. Therefore, if it is formed with a flat structure, reflection may increase and optical characteristics may deteriorate.
Therefore, in the second embodiment, a moth-eye structure is employed in order to avoid a large reflection and a decrease in optical characteristics.
Further, the refractive index of the optical element material at this time is desirably as high as possible, and at least 1.6 or more is necessary.

モスアイ構造は、フォトレジスト工程により、ドライエッチングもしくはウエットエッチングにより形成される。
形成されたモスアイ構造を備えた光学デバイスは、光学特性劣化の少ない透明接着剤１９０によりシールガラス１２０と貼り合わせられる。これによりキャビティレス構造を備えたＷＣＳＰが形成される。 The moth-eye structure is formed by dry etching or wet etching by a photoresist process.
The formed optical device having the moth-eye structure is bonded to the seal glass 120 with a transparent adhesive 190 with little optical property deterioration. As a result, a WCSP having a cavityless structure is formed.

本第２の実施形態の撮像装置１００Ａにおいても、光学デバイス１１０上のグランド端子である電極パッド１４０は開口されていて、透明導電性膜１３０Ａと接触し、電気的に接続している。その他の外部接続端子である接続パッド１５０は開口されていないので、電気的に透明導電性膜１３０Ａとは接続していない。   Also in the imaging apparatus 100A of the second embodiment, the electrode pad 140 that is a ground terminal on the optical device 110 is opened, and is in contact with and electrically connected to the transparent conductive film 130A. Since the connection pads 150 that are other external connection terminals are not opened, they are not electrically connected to the transparent conductive film 130A.

以上のように、第２の実施形態では、透明導電性膜１３０Ａは、モスアイ構造でセンサ表面に形成される。
そして、透明導電性膜１３０Ａは電極パッド１４０に接続され、電極パッド１４０に接続された貫通電極１６０を介して外部接続端子１７０に接続され、この外部接続端子１７０が外部の基準電位（グランド電位）に接続される。
これにより、透明導電性膜１３０Ａは光学素子エリアの保護膜としての機能に加えて、シールド材として機能し、光学デバイス１１０がＥＭＣシールドに覆われている。 As described above, in the second embodiment, the transparent conductive film 130A is formed on the sensor surface with a moth-eye structure.
The transparent conductive film 130A is connected to the electrode pad 140, and is connected to the external connection terminal 170 via the through electrode 160 connected to the electrode pad 140. The external connection terminal 170 is connected to an external reference potential (ground potential). Connected to.
Thereby, the transparent conductive film 130A functions as a shield material in addition to the function as a protective film in the optical element area, and the optical device 110 is covered with the EMC shield.

その他の構成は、撮像装置１００Ａと撮像装置１００とは同様の構成を有する。   In other configurations, the imaging device 100A and the imaging device 100 have the same configuration.

＜３．撮像装置の第３の構成例＞
図６（Ａ）および（Ｂ）は、本実施形態に係る撮像装置の第３の構成例を示す図である。
図６（Ａ）は基板の第１面側に透明導電性膜が配置されている構成例を示す平面図であり、図６（Ｂ）は撮像装置の全体的な構成を示す簡略側面図である。 <3. Third Configuration Example of Imaging Device>
FIGS. 6A and 6B are diagrams illustrating a third configuration example of the imaging apparatus according to the present embodiment.
FIG. 6A is a plan view illustrating a configuration example in which a transparent conductive film is disposed on the first surface side of the substrate, and FIG. 6B is a simplified side view illustrating the overall configuration of the imaging apparatus. is there.

本第３の実施形態に係る撮像装置１００Ｂが第１の実施系形態に係る撮像装置１００と異なる点は次の通りである。
第３の実施形態に係る撮像装置１００Ｂは、ＥＭＣシールドの効果が弱まるが、透明導電性膜による光学特性の劣化を避けるために、光学素子エリア１１２上には透明導電性膜１３０Ｂが形成されていない。
これにより、第３の実施形態に係る撮像装置１００Ｂは、シールガラス１２０と光学デバイス１１０で挟まれた空気層（空隙）ＣＶＴを有するキャビティ構造として構成されている。 The imaging device 100B according to the third embodiment is different from the imaging device 100 according to the first embodiment as follows.
In the imaging apparatus 100B according to the third embodiment, the effect of the EMC shield is weakened, but the transparent conductive film 130B is formed on the optical element area 112 in order to avoid deterioration of the optical characteristics due to the transparent conductive film. Absent.
Accordingly, the imaging apparatus 100B according to the third embodiment is configured as a cavity structure having an air layer (gap) CVT sandwiched between the seal glass 120 and the optical device 110.

この撮像装置１００Ｂでは、光学素子エリア１１２以外に形成された透明導電性膜１３０Ｂ上に接着剤１９０Ｂ（光学特性の劣化は考慮しなくても良い材料）を塗布し、シールガラス１２０と貼り合わせる。
あるいは、シールガラス１２０上にそのエリア形状にパターン形成された接着剤により透明導電性膜をシールガラス１２０と貼り合わせる。 In this imaging apparatus 100B, an adhesive 190B (a material that does not require degradation of optical characteristics) is applied onto the transparent conductive film 130B formed outside the optical element area 112, and is bonded to the seal glass 120.
Alternatively, the transparent conductive film is bonded to the seal glass 120 with an adhesive patterned in the area shape on the seal glass 120.

その他の構成は、撮像装置１００Ｂと撮像装置１００とは同様の構成を有する。   In other configurations, the imaging device 100B and the imaging device 100 have the same configuration.

＜４．撮像装置の第４の構成例＞
図７（Ａ）および（Ｂ）は、本実施形態に係る撮像装置の第４の構成例を示す図である。
図７（Ａ）は基板の第１面側に透明導電性膜が配置されている構成例を示す平面図であり、図７（Ｂ）は撮像装置の全体的な構成を示す簡略側面図である。 <4. Fourth Configuration Example of Imaging Device>
7A and 7B are diagrams illustrating a fourth configuration example of the imaging apparatus according to the present embodiment.
FIG. 7A is a plan view illustrating a configuration example in which a transparent conductive film is disposed on the first surface side of the substrate, and FIG. 7B is a simplified side view illustrating the overall configuration of the imaging apparatus. is there.

本第４の実施形態に係る撮像装置１００Ｃが第３の実施系形態に係る撮像装置１００Ｂと異なる点は次の通りである。
第４の実施形態に係る撮像装置１００Ｃは、透明導電性膜１３０Ｃの表面積を増加させるために多数の孔１３２が形成されている。 The imaging device 100C according to the fourth embodiment is different from the imaging device 100B according to the third embodiment as follows.
In the imaging apparatus 100C according to the fourth embodiment, a large number of holes 132 are formed in order to increase the surface area of the transparent conductive film 130C.

透明導電性膜のシールド効果が十分でない場合には、表面積（特に深さ方向）を増加させることにより、シールド効果を高めることができる（ＥＭＣのための設計テクニック−Ｐａｒｔ４：シールド、http://homepage3.nifty.com/tsato/dtemc/part4.html 参照）。
そこで、本第４の実施形態では、透明導電性膜１３０Ｃに任意の孔１３２を開けた構造を採用している。 When the shielding effect of the transparent conductive film is not sufficient, the shielding effect can be enhanced by increasing the surface area (especially in the depth direction) (design technique for EMC—Part 4: Shield, http: // homepage3.nifty.com/tsato/dtemc/part4.html).
Therefore, in the fourth embodiment, a structure in which an arbitrary hole 132 is formed in the transparent conductive film 130C is adopted.

また、透明導電性膜で光学デバイス１１０が囲まれることがＥＭＣ対策としては効果的であるので、本第４の実施形態では、シールガラス１２０の対向面（光学デバイス側面）１２１に透明導電性膜１３０ｃが形成されている。
この透明導電性膜１３０ｃはガラスの屈折率約１．５に透過率１００％に限りなく近いことが望ましい。 In addition, since it is effective as an EMC countermeasure that the optical device 110 is surrounded by the transparent conductive film, in the fourth embodiment, the transparent conductive film is formed on the opposing surface (optical device side surface) 121 of the seal glass 120. 130c is formed.
The transparent conductive film 130c is desirably close to the refractive index of glass of about 1.5 and the transmittance of 100%.

以上のように、第４の実施形態では、透明導電性膜１３０Ｃの表面積を増加させるために多数の孔１３２が形成されている。透明導電性膜１３０Ｃと光学デバイス１１０のグランド端子である電極パッド１４０と貫通電極１６０により、外部のグランド端子と接続される。
これにより、透明導電性膜１３０Ｃは光学素子エリアの保護膜としての機能に加えて、シールド材として機能し、光学デバイス１１０がＥＭＣシールドに覆われている。 As described above, in the fourth embodiment, a large number of holes 132 are formed in order to increase the surface area of the transparent conductive film 130C. The transparent conductive film 130C, the electrode pad 140 which is a ground terminal of the optical device 110, and the through electrode 160 are connected to an external ground terminal.
Thereby, the transparent conductive film 130C functions as a shield material in addition to the function as a protective film in the optical element area, and the optical device 110 is covered with the EMC shield.

＜５．撮像装置の第５の構成例＞
図８（Ａ）および（Ｂ）は、本実施形態に係る撮像装置の第５の構成例を示す図である。
図５（Ａ）は基板の第１面側に透明導電性膜が配置されている構成例を示す平面図であり、図５（Ｂ）は撮像装置の全体的な構成を示す簡略側面図である。 <5. Fifth Configuration Example of Imaging Device>
8A and 8B are diagrams illustrating a fifth configuration example of the imaging apparatus according to the present embodiment.
FIG. 5A is a plan view illustrating a configuration example in which a transparent conductive film is disposed on the first surface side of the substrate, and FIG. 5B is a simplified side view illustrating the overall configuration of the imaging apparatus. is there.

本第５の実施形態に係る撮像装置１００Ｄが第２の実施系形態に係る撮像装置１００Ａと異なる点は次の通りである。
第２の実施形態では、透明導電性膜１３０Ａがモスアイ構造を有する場合の例である。
これに対して、本第４の実施形態では、導電性を備えないモスアイ構造の透明膜２００を用いた、キャビティレスＷＣＳＰを実現している。 The imaging device 100D according to the fifth embodiment is different from the imaging device 100A according to the second embodiment as follows.
The second embodiment is an example where the transparent conductive film 130A has a moth-eye structure.
On the other hand, in the fourth embodiment, a cavityless WCSP using the transparent film 200 having a moth-eye structure that does not have conductivity is realized.

以上のように、第４の実施形態では、透明膜２００が、モスアイ構造でセンサ表面に形成される。
そして、透明導電性膜１３０Ｄは電極パッド１４０に接続され、電極パッド１４０に接続された貫通電極１６０を介して外部接続端子１７０に接続され、この外部接続端子１７０が外部の基準電位（グランド電位）に接続される。
これにより、透明導電性膜１３０Ｄは光学素子エリアの保護膜としての機能に加えて、シールド材として機能し、光学デバイス１１０がＥＭＣシールドに覆われている。 As described above, in the fourth embodiment, the transparent film 200 is formed on the sensor surface with a moth-eye structure.
The transparent conductive film 130D is connected to the electrode pad 140 and connected to the external connection terminal 170 through the through electrode 160 connected to the electrode pad 140. The external connection terminal 170 is connected to an external reference potential (ground potential). Connected to.
Thus, the transparent conductive film 130D functions as a shield material in addition to the function as a protective film in the optical element area, and the optical device 110 is covered with the EMC shield.

その他の構成は、撮像装置１００Ｄと撮像装置１００Ａとは同様の構成を有する。   In other configurations, the imaging device 100D and the imaging device 100A have the same configuration.

本実施形態によれば、以下の効果を得ることができる。
ＥＭＣ対策を施したＷＣＳＰを提供できる。
ＥＭＣ対策を施したＷＣＳＰの提供により、小型かつ低コストなレンズ一体型カメラモジュールを提供できる。
キャビティレスＷＣＳＰの提供により、シリコン薄化によるキャビティエリアの反り低減や、キャビティエリアの強度増加、リフロー時のキャビティエリアの内圧上昇による、スペーサーの剥離低減が実現できる。
レンズ一体型カメラモジュールの遮光膜材料に制限が無く、導電性でも、絶縁性な材料でも使用することができる。
ＥＭＣ耐性は導電性膜の膜厚に依存するが、ＷＣＳＰにおけるＥＭＣ耐性の調整を透明導電性膜の形状でコントロールできる。
貫通電極でシールド（透明導電性膜）と外部グランドとを接続できるので、下面の外部接続端子と側面に形成した導電性膜との接続方法を考慮しなくて良い。 According to the present embodiment, the following effects can be obtained.
A WCSP with EMC countermeasures can be provided.
By providing WCSP with EMC countermeasures, it is possible to provide a small and low-cost integrated camera module with a lens.
By providing cavityless WCSP, it is possible to reduce the warpage of the cavity area by thinning the silicon, increase the strength of the cavity area, and reduce the peeling of the spacer by increasing the internal pressure of the cavity area during reflow.
There is no limitation on the light shielding film material of the lens-integrated camera module, and any conductive or insulating material can be used.
Although EMC resistance depends on the film thickness of the conductive film, adjustment of EMC resistance in WCSP can be controlled by the shape of the transparent conductive film.
Since the shield (transparent conductive film) and the external ground can be connected by the through electrode, it is not necessary to consider the connection method between the external connection terminal on the lower surface and the conductive film formed on the side surface.

以上説明した撮像装置１００，１００Ａ〜１００Ｄは、撮像レンズを有するカメラモジュールに適用することが可能である。   The imaging devices 100 and 100A to 100D described above can be applied to a camera module having an imaging lens.

＜５．カメラモジュールの構成例＞
図９は、本実施形態に係るカメラモジュールの構成例を示す図である。
図９は、ＷＣＳＰ構造でＥＭＣ対策が十分な場合のレンズ一体型カメラモジュール構造例を示している。撮像装置としては、一例として第２の実施形態に係る撮像装置１００Ａが採用されているが、他の実施形態の撮像装置１００，１００Ｂ〜１００Ｄを適用することも可能である。
ＷＣＳＰ上に接着剤３０１で撮像レンズ３１０を搭載し、側面には遮光膜３３２を塗布している。 <5. Configuration example of camera module>
FIG. 9 is a diagram illustrating a configuration example of the camera module according to the present embodiment.
FIG. 9 shows an example of a lens-integrated camera module structure in the case where the WCSP structure has sufficient EMC countermeasures. As an example of the imaging apparatus, the imaging apparatus 100A according to the second embodiment is employed, but the imaging apparatuses 100 and 100B to 100D according to other embodiments may be applied.
An imaging lens 310 is mounted on the WCSP with an adhesive 301, and a light shielding film 332 is applied to the side surface.

このカメラモジュール３００は、撮像装置１００Ａの前面側（被写体側）に光学デバイス（センサ）１１０の光学素子エリア（受光部）１１２に被写体像を結像する撮像レンズ３１０が配置されている。
カメラモジュール３００は、撮像レンズ３１０に加えて、図示しない信号処理部等を有する。 In the camera module 300, an imaging lens 310 that forms a subject image on an optical element area (light receiving unit) 112 of an optical device (sensor) 110 is disposed on the front side (subject side) of the imaging apparatus 100A.
The camera module 300 includes a signal processing unit (not shown) in addition to the imaging lens 310.

このような構成のカメラモジュール３００においては、撮像レンズ３１０で取り込んだ被写体からの光を、撮像装置で電気信号に変換しやすいように受光部において光学的な処理を施す。その後、光学デバイス（センサ）１１０の光電変換部に導き、光電変換して得られる電気信号に対して、後段の信号処理部で所定の信号処理を施す。   In the camera module 300 having such a configuration, the light receiving unit performs optical processing so that light from the subject captured by the imaging lens 310 can be easily converted into an electrical signal by the imaging device. Thereafter, the signal is guided to the photoelectric conversion unit of the optical device (sensor) 110, and a predetermined signal processing is performed on the electrical signal obtained by photoelectric conversion by the subsequent signal processing unit.

本実施形態のカメラモジュールにおいても、モジュールの大型化、工程の複雑化、コスト増大を防止しつつ、ＥＭＣやＥＭＩ効果を十分に発現させることが可能となる。   Also in the camera module of this embodiment, it is possible to sufficiently exhibit the EMC and EMI effects while preventing an increase in the size of the module, a complicated process, and an increase in cost.

なお、本技術は以下のような構成をとることができる。
（１）基板の第１面側に受光するための光学素子エリアが形成され、上記基板の上記第１面と反対側の第２面側に外部接続端子が形成された光学デバイスと、
上記基板の第１面と対向するように形成された透明導電性膜と、
上記基板の第１面に形成されて固定電位に接続するための電極パッドと、
上記電極パッドに接続されて、上記基板の第１面と第２面を貫通するように形成された貫通電極と、を有し、
上記透明導電性膜が上記電極パッドに接続され、
上記貫通電極が上記基板の上記第２面側で上記外部接続端子に接続されている
撮像装置。
（２）上記透明導電性膜は、
少なくとも上記光学素子エリアと対向する領域が微細パターンにより光学特性を示すモスアイ構造として形成されている
上記（１）記載の撮像装置。
（３）少なくとも上記光学素子エリアと対向する領域に、微細パターンにより光学特性を示すモスアイ構造として形成された透明膜が配置されている
上記（１）記載の撮像装置。
（４）上記透明導電性膜は、
少なくとも一部において、深さ方向に孔が形成されている
上記（１）から（３）のいずれか一に記載の撮像装置。
（５）上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記光学素子エリアを含む上記基板の第１面と上記シール材の当該第１面との対向面間に充填するように形成されている
上記（１）から（４）のいずれか一に記載の撮像装置。
（６）上記透明導電性膜は上記光学素子エリアとは非接触状態で形成されている
上記（１）から（４）のいずれか一に記載の撮像装置。
（７）上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記シール材の上記光学素子エリアとの対向面に少なくとも当該光学素子エリアと空隙を隔てて形成されている
上記（６）記載の撮像装置。
（８）上記透明導電性膜は、
上記光学素子エリアと対向する領域を除いた領域に形成されている
上記（６）記載の撮像装置。
（９）上記基板の第１面側には上記電極パッドと異なる他のパッドが形成され、当該他のパッドは上記透明導電性膜と電気的に非接続状態にある
上記（１）から（８）のいずれか一に記載の撮像装置。
（１０）受光するための光学素子エリアを含む撮像装置と、
上記撮像装置の上記光学素子エリアに被写体像を結像するレンズと、を有し、
上記撮像装置は、
基板の第１面側に受光するための光学素子エリアが形成され、上記基板の上記第１面と反対側の第２面側に外部接続端子が形成された光学デバイスと、
上記基板の第１面と対向するように形成された透明導電性膜と、
上記基板の第１面に形成されて固定電位に接続するための電極パッドと、
上記電極パッドに接続されて、上記基板の第１面と第２面を貫通するように形成された貫通電極と、を含み、
上記透明導電性膜が上記電極パッドに接続され、
上記貫通電極が上記基板の上記第２面側で上記外部接続端子に接続されている
カメラモジュール。
（１１）上記透明導電性膜は、
少なくとも上記光学素子エリアと対向する領域が微細パターンにより光学特性を示すモスアイ構造として形成されている
上記（１０）記載のカメラモジュール。
（１２）少なくとも上記光学素子エリアと対向する領域に、微細パターンにより光学特性を示すモスアイ構造として形成された透明膜が配置されている
上記（１０）記載のカメラモジュール。
（１３）上記透明導電性膜は、
少なくとも一部において、深さ方向に孔が形成されている
上記（１０）から（１２）のいずれか一に記載のカメラモジュール。
（１４）上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記光学素子エリアを含む上記基板の第１面と上記シール材の当該第１面との対向面間に充填するように形成されている
上記（１０）から（１３）のいずれか一に記載のカメラモジュール。
（１５）上記透明導電性膜は上記光学素子エリアとは非接触状態で形成されている
上記（１０）から（１３）のいずれか一に記載のカメラモジュール。
（１６）上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記シール材の上記光学素子エリアとの対向面に少なくとも当該光学素子エリアと空隙を隔てて形成されている
上記（１５）記載のカメラモジュール。
（１７）上記透明導電性膜は、
上記光学素子エリアと対向する領域を除いた領域に形成されている
上記（１５）記載のカメラモジュール。 In addition, this technique can take the following structures.
(1) An optical device in which an optical element area for receiving light is formed on the first surface side of the substrate, and an external connection terminal is formed on the second surface side opposite to the first surface of the substrate;
A transparent conductive film formed to face the first surface of the substrate;
An electrode pad formed on the first surface of the substrate for connection to a fixed potential;
A through electrode connected to the electrode pad and formed to penetrate the first surface and the second surface of the substrate;
The transparent conductive film is connected to the electrode pad;
The imaging apparatus, wherein the through electrode is connected to the external connection terminal on the second surface side of the substrate.
(2) The transparent conductive film is
The imaging apparatus according to (1), wherein at least a region facing the optical element area is formed as a moth-eye structure having optical characteristics with a fine pattern.
(3) The imaging device according to (1), wherein a transparent film formed as a moth-eye structure having optical characteristics with a fine pattern is disposed at least in a region facing the optical element area.
(4) The transparent conductive film is
The imaging device according to any one of (1) to (3), wherein a hole is formed in a depth direction at least in part.
(5) having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
It is formed so that it may fill between the opposing surfaces of the 1st surface of the said board | substrate containing the said optical element area, and the said 1st surface of the said sealing material. Any one of said (1) to (4) Imaging device.
(6) The imaging device according to any one of (1) to (4), wherein the transparent conductive film is formed in a non-contact state with the optical element area.
(7) having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
The imaging device according to (6), wherein the sealing member is formed on a surface facing the optical element area with at least a gap from the optical element area.
(8) The transparent conductive film is
The imaging device according to (6), wherein the imaging device is formed in a region excluding a region facing the optical element area.
(9) Another pad different from the electrode pad is formed on the first surface side of the substrate, and the other pad is not electrically connected to the transparent conductive film. ).
(10) an imaging device including an optical element area for receiving light;
A lens that forms a subject image on the optical element area of the imaging device,
The imaging apparatus is
An optical device in which an optical element area for receiving light is formed on the first surface side of the substrate, and an external connection terminal is formed on the second surface side opposite to the first surface of the substrate;
A transparent conductive film formed to face the first surface of the substrate;
An electrode pad formed on the first surface of the substrate for connection to a fixed potential;
A through electrode connected to the electrode pad and formed to penetrate the first surface and the second surface of the substrate;
The transparent conductive film is connected to the electrode pad;
The camera module, wherein the through electrode is connected to the external connection terminal on the second surface side of the substrate.
(11) The transparent conductive film is
The camera module according to (10), wherein at least a region facing the optical element area is formed as a moth-eye structure having optical characteristics with a fine pattern.
(12) The camera module according to (10), wherein a transparent film formed as a moth-eye structure having optical characteristics with a fine pattern is disposed at least in a region facing the optical element area.
(13) The transparent conductive film is
The camera module according to any one of (10) to (12), wherein a hole is formed in a depth direction at least in part.
(14) having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
It is formed so that it may fill between the opposing surfaces of the 1st surface of the said board | substrate containing the said optical element area, and the said 1st surface of the said sealing material. Any one of said (10) to (13). The camera module.
(15) The camera module according to any one of (10) to (13), wherein the transparent conductive film is formed in a non-contact state with the optical element area.
(16) having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
The camera module according to (15), wherein the seal member is formed on a surface facing the optical element area with at least a gap from the optical element area.
(17) The transparent conductive film is
The camera module according to (15), wherein the camera module is formed in a region excluding a region facing the optical element area.

１００，１００Ａ〜１００Ｄ・・・撮像装置、１１０・・・光学センサ、１１１・・・センサ基板、１１１ａ・・・第１面、１１１ｂ・・・第２面、１１２・・・光学素子エリア（受光部）、１２０・・・シールガラス、１３０，１３０Ａ〜１３０Ｄ・・・透明導電性膜、１４０・・・電極パッド、１５０・・・その他の接続パッド、１６０・・・貫通電極、１７０・・・外部接続端子、１８０・・・赤外カットフィルタ（ＩＲＣＦ）、３００・・・カメラモジュール、３１０・・・撮像レンズ，３２０・・・遮光膜。   DESCRIPTION OF SYMBOLS 100,100A-100D ... Imaging device, 110 ... Optical sensor, 111 ... Sensor substrate, 111a ... 1st surface, 111b ... 2nd surface, 112 ... Optical element area (light reception) Part), 120 ... seal glass, 130, 130A to 130D ... transparent conductive film, 140 ... electrode pad, 150 ... other connection pads, 160 ... through electrode, 170 ... External connection terminal, 180... Infrared cut filter (IRCF), 300... Camera module, 310.

Claims (17)

基板の第１面側に受光するための光学素子エリアが形成され、上記基板の上記第１面と反対側の第２面側に外部接続端子が形成された光学デバイスと、
上記基板の第１面と対向するように形成された透明導電性膜と、
上記基板の第１面に形成されて固定電位に接続するための電極パッドと、
上記電極パッドに接続されて、上記基板の第１面と第２面を貫通するように形成された貫通電極と、を有し、
上記透明導電性膜が上記電極パッドに接続され、
上記貫通電極が上記基板の上記第２面側で上記外部接続端子に接続されている
撮像装置。 An optical device in which an optical element area for receiving light is formed on the first surface side of the substrate, and an external connection terminal is formed on the second surface side opposite to the first surface of the substrate;
A transparent conductive film formed to face the first surface of the substrate;
An electrode pad formed on the first surface of the substrate for connection to a fixed potential;
A through electrode connected to the electrode pad and formed to penetrate the first surface and the second surface of the substrate;
The transparent conductive film is connected to the electrode pad;
The imaging apparatus, wherein the through electrode is connected to the external connection terminal on the second surface side of the substrate. 上記透明導電性膜は、
少なくとも上記光学素子エリアと対向する領域が微細パターンにより光学特性を示すモスアイ構造として形成されている
請求項１記載の撮像装置。 The transparent conductive film is
The imaging apparatus according to claim 1, wherein at least a region facing the optical element area is formed as a moth-eye structure having optical characteristics with a fine pattern. 少なくとも上記光学素子エリアと対向する領域に、微細パターンにより光学特性を示すモスアイ構造として形成された透明膜が配置されている
請求項１記載の撮像装置。 The imaging device according to claim 1, wherein a transparent film formed as a moth-eye structure showing optical characteristics with a fine pattern is disposed at least in a region facing the optical element area. 上記透明導電性膜は、
少なくとも一部において、深さ方向に孔が形成されている
請求項１記載の撮像装置。 The transparent conductive film is
The imaging apparatus according to claim 1, wherein a hole is formed in a depth direction at least in part. 上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記光学素子エリアを含む上記基板の第１面と上記シール材の当該第１面との対向面間に充填するように形成されている
請求項１記載の撮像装置。 Having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
The imaging device according to claim 1, wherein the imaging device is formed so as to be filled between opposing surfaces of the first surface of the substrate including the optical element area and the first surface of the sealing material. 上記透明導電性膜は上記光学素子エリアとは非接触状態で形成されている
請求項１記載の撮像装置。 The imaging apparatus according to claim 1, wherein the transparent conductive film is formed in a non-contact state with the optical element area. 上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記シール材の上記光学素子エリアとの対向面に少なくとも当該光学素子エリアと空隙を隔てて形成されている
請求項６記載の撮像装置。 Having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
The imaging device according to claim 6, wherein the sealing material is formed on a surface facing the optical element area with at least a gap from the optical element area. 上記透明導電性膜は、
上記光学素子エリアと対向する領域を除いた領域に形成されている
請求項６記載の撮像装置。 The transparent conductive film is
The imaging device according to claim 6, wherein the imaging device is formed in a region excluding a region facing the optical element area. 上記基板の第１面側には上記電極パッドと異なる他のパッドが形成され、当該他のパッドは上記透明導電性膜と電気的に非接続状態にある
請求項１記載の撮像装置。 The imaging device according to claim 1, wherein another pad different from the electrode pad is formed on the first surface side of the substrate, and the other pad is not electrically connected to the transparent conductive film. 受光するための光学素子エリアを含む撮像装置と、
上記撮像装置の上記光学素子エリアに被写体像を結像するレンズと、を有し、
上記撮像装置は、
基板の第１面側に受光するための光学素子エリアが形成され、上記基板の上記第１面と反対側の第２面側に外部接続端子が形成された光学デバイスと、
上記基板の第１面と対向するように形成された透明導電性膜と、
上記基板の第１面に形成されて固定電位に接続するための電極パッドと、
上記電極パッドに接続されて、上記基板の第１面と第２面を貫通するように形成された貫通電極と、を含み、
上記透明導電性膜が上記電極パッドに接続され、
上記貫通電極が上記基板の上記第２面側で上記外部接続端子に接続されている
カメラモジュール。 An imaging device including an optical element area for receiving light;
A lens that forms a subject image on the optical element area of the imaging device,
The imaging apparatus is
An optical device in which an optical element area for receiving light is formed on the first surface side of the substrate, and an external connection terminal is formed on the second surface side opposite to the first surface of the substrate;
A transparent conductive film formed to face the first surface of the substrate;
An electrode pad formed on the first surface of the substrate for connection to a fixed potential;
A through electrode connected to the electrode pad and formed to penetrate the first surface and the second surface of the substrate;
The transparent conductive film is connected to the electrode pad;
The camera module, wherein the through electrode is connected to the external connection terminal on the second surface side of the substrate. 上記透明導電性膜は、
少なくとも上記光学素子エリアと対向する領域が微細パターンにより光学特性を示すモスアイ構造として形成されている
請求項１０記載のカメラモジュール。 The transparent conductive film is
The camera module according to claim 10, wherein at least a region facing the optical element area is formed as a moth-eye structure having optical characteristics with a fine pattern. 少なくとも上記光学素子エリアと対向する領域に、微細パターンにより光学特性を示すモスアイ構造として形成された透明膜が配置されている
請求項１０記載のカメラモジュール。 The camera module according to claim 10, wherein a transparent film formed as a moth-eye structure showing optical characteristics with a fine pattern is disposed at least in a region facing the optical element area. 上記透明導電性膜は、
少なくとも一部において、深さ方向に孔が形成されている
請求項１０記載のカメラモジュール。 The transparent conductive film is
The camera module according to claim 10, wherein a hole is formed in a depth direction in at least a part. 上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記光学素子エリアを含む上記基板の第１面と上記シール材の当該第１面との対向面間に充填するように形成されている
請求項１０記載のカメラモジュール。 Having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
The camera module according to claim 10, wherein the camera module is formed so as to be filled between opposing surfaces of the first surface of the substrate including the optical element area and the first surface of the sealing material. 上記透明導電性膜は上記光学素子エリアとは非接触状態で形成されている
請求項１０記載のカメラモジュール。 The camera module according to claim 10, wherein the transparent conductive film is formed in a non-contact state with the optical element area. 上記光学デバイスの上記光学素子エリア側を保護するためのシール材を有し、
上記透明導電性膜は、
上記シール材の上記光学素子エリアとの対向面に少なくとも当該光学素子エリアと空隙を隔てて形成されている
請求項１５記載のカメラモジュール。 Having a sealing material for protecting the optical element area side of the optical device;
The transparent conductive film is
The camera module according to claim 15, wherein the seal member is formed on a surface facing the optical element area of the sealing material with at least a gap from the optical element area. 上記透明導電性膜は、
上記光学素子エリアと対向する領域を除いた領域に形成されている
請求項１５記載のカメラモジュール。 The transparent conductive film is
The camera module according to claim 15, wherein the camera module is formed in a region excluding a region facing the optical element area.
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