TW201112941A - Shield film, shield circuit board having the same and grounding method of shield film - Google Patents
Shield film, shield circuit board having the same and grounding method of shield film Download PDFInfo
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201112941^ 六、發明說明： 【發明所屬之技術領域】 本發明關於一種柔性扁平電纜（flexible f]at cable )等 的具有導電體的基板中所使用的遮罩膜（shieldfilm)、具 有該遮罩膜的遮罩配線板、以及遮罩膜的接地（gr〇und) 連接方法。 【先前技術】 以往，柔性扁平電纜等的具有導電體的基板在以電視 (television)、錄影機（video recorder )、手機及個人電腦為 代表的辦公自動化（Office Automation，OA)設備等的各 種電子設備中，多被用於將設備内部或設備之間予以連接。 另外，近年來，由於資訊社會的發展，電子設備被要 求實現電子通信的高速化，隨之，為了減輕來自高速化後 的電信號的多餘輻射或來自外部的雜訊（n〇ise)，在柔性 扁平電纜等的具有導電體的基板上貼附著遮罩膜。而且， 因為需要在與所連接的設備之間進行阻抗（impedance)的 匹配，所以所述基板貼附著具有對阻抗進行控制（c〇ntr〇1) 的功此的阻抗控制膜（impedance contr〇i )。 例如，在專利文獻1中，如圖6所示，揭示了一種柔 性扁平電纜50，包括信號導體51與接地導體52的多個導 體並排地排列在寬度方向上，由具有絕緣性的接著層53 的發泡絕緣體54在厚度方向上，從兩侧來夾持所述多個導 ，之後，經過層疊（laminate)加工，接著由具有導電性接 著層55的金屬層56從兩側來夾持所述發泡絕緣體54。另 201112941BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a shield film used in a substrate having a conductor such as a flexible flat cable or the like, having the mask The mask wiring board of the film and the grounding method of the mask film. [Prior Art] Conventionally, various types of electronic devices such as flexible flat cables and the like have been used in office automation (OA) equipment such as televisions, video recorders, mobile phones, and personal computers. In the device, it is often used to connect devices inside or between devices. In addition, in recent years, due to the development of the information society, electronic devices are required to realize high-speed electronic communication, and accordingly, in order to reduce unnecessary radiation from externalized electric signals or noise from the outside, A mask film is attached to a substrate having a conductor such as a flexible flat cable. Moreover, since the impedance matching needs to be performed between the connected devices, the substrate is attached with an impedance control film (impedance contr〇i) having a function of controlling the impedance (c〇ntr〇1). ). For example, in Patent Document 1, as shown in FIG. 6, a flexible flat cable 50 is disclosed in which a plurality of conductors including a signal conductor 51 and a ground conductor 52 are arranged side by side in the width direction, and an insulating adhesive layer 53 is provided. The foamed insulator 54 sandwiches the plurality of leads from both sides in the thickness direction, and then is subjected to lamination processing, and then the metal layer 56 having the conductive adhesive layer 55 is sandwiched from both sides. The foamed insulator 54 is described. Another 201112941
外’在金屬層56上設置有絕緣性膜57 D ^具有如上所述的構成的柔性扁平電纜50藉由將發泡 絕緣體Μ的介電常數與纽的介數予賴合，可對特 性阻抗進行調整。另外，柔性扁平魏5G在金屬層56的 作用下’具有遮罩效果。Externally, an insulating film 57 is provided on the metal layer 56. The flexible flat cable 50 having the above configuration can be subjected to characteristic impedance by interposing the dielectric constant of the foamed insulator 与 with the dielectric of the kin. Make adjustments. In addition, the flexible flat Wei 5G has a masking effect under the action of the metal layer 56.
另外，例如，在專利文獻2中，如圖7所示，揭示了 -種阻抗控制遮罩配線板6〇，在基礎膜（_ fiim ) 63上， ^信號導體61及接地導體62的多個導體並排地排列在 見度方向上，且設置有絕緣層64，而且，依次設置有包括 ”有‘電性接著層65的開口金屬薄膜層66與絕緣性膜 =且抗控制膜、以及包括具有導電性接著層6S的非開口金 屬溥膜層69與絕緣性膜7〇的遮罩膜。 有如上所韻構成雜抗控繼罩喊板6〇 口 ^屬薄則66的作用下，具有阻抗控制效果，且 口金屬薄膜層69的作用下，具有遮罩效果。 [先行技術文獻] [專利文獻] L寻利文獻1]日本專利特開2〇〇3 31〇33號公報 [專利文獻2]日本專利特開2〇〇6 24824號公報 ^是，如圖6卿，對於專敎獻丨的紐扁 為了使金屬層56的電位為接地電位 咅 預先在導電性接著層55、魏絕緣體54、以及接m 的導電性接著層 201112941 .η 接。 n/為了使柔性4平魏5G獲得阻抗效果與遮罩效 ^兩個效果，需要至少兩個步聊騎泡絕賴％進 加工的步驟、及然後由金屬層56來進行夾持的步驟。 ㈣Π 7所示’對於專利文獻2的阻抗控制遮罩 " 〇而5，為了使開口金屬薄膜層66的電位為接姑 =，也需要特意縣在絕緣層64⑽—部分上設置非絕 、、邛71 ’並藉由填埋該非絕緣部71的導電性接著層Μ來 將開口金屬薄膜層66與接地導體62予以連接。 另外，為了使阻抗㈣遮罩配線板6G獲得阻抗效果鱼 遮罩效f這兩個效果，需要形賴口金屬_相及非開 口金屬薄膜層該兩個層的至少兩個步驟。 如此，專利文獻1的柔性扁平電纜5〇及專利文獻2 的阻抗控制遮罩配線板60存在如下的_:為了獲得遮罩 效果以及贱㈣縣，需要㈣設置非絕緣部並使接地 導體露出’或需要形成具有遮罩效果的層與具有阻抗控制 效果的層的至少兩個步驟’會耗f工夫及成本（c〇s〇: 因此，本發明的目的在於提供可不使成為遮罩膜的貼 附對象的基板的接地導體露出而容易地接地的遮罩膜、可 =用該遮罩膜並以-個步驟而具有遮罩功能與阻抗控制功 迠的遮罩配線板、以及使用有該遮罩膜的接地方法。 本發明的遮罩膜藉由加熱以及加壓而連接於導電構 件，該導電構件包括接觸狀態下的用以與外部接地構件連 201112941.f 接的金屬層及包含導電性粒子的導電性接著 膜包括：覆η 、 ^佼考層，所述遮罩 脂所形成^ 所述加—軟化的樹 月曰斤滅猎由所述加熱以及加壓來連接之 從所述導電性接著声突七的 开v成為比 -人層a所魏减的金屬薄膜層及接著層。 根據所述構成，當藉由加熱以及加^將 、金屬薄膜層、以及接著層的遮罩膜時， „树脂所形成的覆蓋膜因加熱而軟化， 2接時，覆蓋朗層厚度比從導電構件㈣導電性接 突出的導電性粒子的平均突出長度更薄，因此，因加斤二 從導電性接著，突出的導電性粒子可穿破遮罩膜内的^蓋 膜而到達金屬薄膜層為止。藉此，因為可經由導電性粒 來使遮軍膜_金屬_層的電位為接地電位，所以 像以往那樣’將貼附著遮罩膜的基板内的接 料 進订加工來使接地導體露出的工夫，也不會耗費加工】 本。另外，因為僅將導電構件連接於遮罩膜，所以即使 如在使用了長條狀的基板時，仍可在預期的位置容易地將 遮罩膜接地。 ‘ 另外，在本發明的遮罩膜中，也可在所述接著層上進 一步接著有插人層’藉由將所述插人層接著於具有^電體 的基板，對具有該導電體的基板的阻抗進行控制。 根據所述構成，藉由對插入層的厚度進行調整，可對 201112941 因此，遮罩膜包括對 具有導電體的基板的阻抗進行調整 =導電體的基板的阻抗進行調整的相及具有遮罩效果 藉由將遮罩膜貼附於基板的個步驟，就既可對 基板賦予鮮絲，又可賴紐賦作抗控制效果。 平電^外’林發_料财，所縣板切為柔性扁 根據所述構成，可提供_於纽扁平 另外，本發明是-種遮罩配線板，包括具有導迎電罩體膜的 基板、以及如上所述的遮罩膜。 根據所述構成’可提供貼附有遮罩膜的遮罩配線板。 另外，本發明是一種遮罩膜的接地方法，該遮罩膜包 括由;^日所形成的覆蓋膜、以及依次層疊於所述覆蓋膜的 金屬薄膜層及接著層，該遮罩朗接地方法的特徵在於： 導電構件包括接觸狀態下的與外部接地構件連接的金 屬層及包含導電餘子的導電性接著層，以使所述樹脂軟 化的溫度來對該導電構件一邊加熱'一邊加壓，將該導電 性接著層麟職蓋舒哺著，藉此，突出得比所述覆 蓋膜的層厚度更長的所述導電性粒子到達所述金屬薄膜層 為止，從而接地。 根據所述接地方法，當藉由加熱以及加壓來將導電構 件連接於包括錢膜、金屬雜層、以及接著層的遮罩膜 時，遮罩膜内的由樹脂所形成的覆蓋膜因加熱而軟化，而 且在連接時，覆蓋膜的層厚度比從導電構件内的導電性接 著層突出的導電性粒子的平均突出長度更薄，因此，因加 201112941^ 導電性接著層突出的導電性粒子可穿破遮罩膜 覆盍膜而到達金屬薄膜層為止。藉此，因為可經由導電性 粒子來使遮罩咖的金屬賴層的電位為接地電位以 無需像以往雜，將_著料朗絲_接地導體盘 遮罩膜内的金屬薄膜層予以連接。因此，既不需要預先& 基板進行加工來使接地導體露出的工夫，也不會耗費加工 成本。另外，因為僅將導電構件連接於遮罩膜，所以即使 例如在使用了長條狀的基板時，仍可在預期的位置容易地 將遮罩膜接地。 [發明的效果] 根據本發明的遮罩膜，因為可經由導電性粒子來使遮 罩膜内的金屬薄膜層的電位為接地.電位，所以既不需要預 先對基板進行加工來使接地導體露出的工夫，也不會耗費 加工成本。另外，因為僅將導電構件連接於遮罩膜，所以 可在預期的位置容易地將遮罩膜接地。 上述說明僅是本發明技術方案的概述，為了能夠更清 楚瞭解本發明的技術手段，並可依照說明書的内容予以實 施，以下以本發明的較佳實施例並配合附圖詳細說明如後。 【實施方式】 以下，基於附圖來對本發明的實施方式進行說明。 (整體構成） 如圖1所示，本發明的遽罩膜20藉由加熱以及加壓而 連接於導電構件30，該導電構件30包括接觸狀態下的用 以與外部接地構件連接的金屬層及包含導電性粒子35的Further, for example, in Patent Document 2, as shown in Fig. 7, a plurality of impedance control mask wiring boards 6A are disclosed, and on the base film (_fiim) 63, a plurality of signal conductors 61 and ground conductors 62 are provided. The conductors are arranged side by side in the visibility direction, and are provided with an insulating layer 64, and, in turn, an open metal thin film layer 66 including an "with" electrical adhesive layer 65 and an insulating film = and an anti-control film, and including The non-opening metal ruthenium film layer 69 of the conductive adhesive layer 6S and the mask film of the insulating film 7 。 have the impedance of the above-mentioned rhyme, and the impedance is controlled by the smashing plate 6 The effect of the control is achieved by the action of the metal film layer 69. [Prior Art Document] [Patent Document] L-Lei Document 1] Japanese Patent Laid-Open No. 2〇〇3 31〇33 [Patent Document 2 Japanese Patent Laid-Open No. 2〇〇6 24824 is a figure, as shown in Fig. 6 for the purpose of making the potential of the metal layer 56 a ground potential, in advance of the conductive adhesive layer 55, the Wei insulator 54 And the conductivity of the next layer is connected to the layer 201112941 .η. The 4th Wei 5G obtains two effects of the impedance effect and the mask effect, and requires at least two steps of the step of riding the bubble, and the step of clamping by the metal layer 56. (4) In the case of the impedance control mask of Patent Document 2, in order to make the potential of the opening metal thin film layer 66 a contact, it is necessary to provide a non-existent, 邛71' portion on the insulating layer 64(10)- The open metal thin film layer 66 and the ground conductor 62 are connected by filling the conductive adhesive layer of the non-insulating portion 71. In addition, in order to obtain the impedance effect of the impedance (four) mask wiring board 6G, the fish mask effect f For example, the flexible flat cable 5 of Patent Document 1 and the impedance control mask wiring board 60 of Patent Document 2 are as follows. _: In order to obtain the mask effect and the 四(4) county, it is necessary to (4) provide a non-insulated portion and expose the ground conductor 'or at least two steps of forming a layer having a mask effect and a layer having an impedance control effect. time Cost (c〇s〇: Therefore, an object of the present invention is to provide a mask film which can be easily grounded without exposing a ground conductor of a substrate to be attached to a mask film, and can be used with the mask film A mask wiring board having a mask function and an impedance control function, and a grounding method using the mask film. The mask film of the present invention is connected to a conductive member by heating and pressurization, and the conductive member The metal layer including the contact and the external grounding member connected to the external grounding member and the conductive adhesive film including the conductive particles include: a cover layer η, a test layer formed by the masking grease - The softened tree stalks are connected by the heating and pressurization, and the opening v of the conductive spurs 7 becomes a metal thin film layer and an adhesive layer which are reduced by the human layer a. According to the above configuration, when the mask film is formed by heating and adding, the metal thin film layer, and the adhesive layer, the cover film formed of the resin is softened by heating, and when it is connected, the thickness ratio of the cover layer is from the conductive layer. The fourth protruding member of the conductive member has a thinner average protruding length. Therefore, the conductive particles protruding from the conductive film can penetrate the cover film in the mask film to reach the metal thin film layer. In this way, since the potential of the barrier film_metal layer can be made to be grounded via the conductive particles, the grounding conductor is exposed by ordering the bonding in the substrate to which the mask film is attached as in the related art. In addition, since the conductive member is only connected to the mask film, the mask film can be easily grounded at a desired position even when a long substrate is used. In addition, in the mask film of the present invention, an insertion layer may be further formed on the adhesive layer by attaching the insertion layer to a substrate having an electric body, and having the electric conductor Substrate According to the above configuration, by adjusting the thickness of the interposer, it is possible to adjust the thickness of the interposer to 201112941. Therefore, the mask film includes the adjustment of the impedance of the substrate having the conductor = the phase of the impedance of the substrate of the conductor. By masking the effect of attaching the mask film to the substrate, it is possible to impart fresh silk to the substrate, and it can be used as an anti-control effect. The board is cut into a flexible flat. According to the above configuration, it is possible to provide a flat panel. The present invention is a mask wiring board including a substrate having a conductive sheath film and a mask film as described above. The present invention is a masking wiring board to which a mask film is attached. Further, the present invention is a method for grounding a mask film, which comprises a cover film formed by the surface of the film, and laminated in this order The metal thin film layer and the adhesive layer of the cover film are characterized in that: the conductive member includes a metal layer connected to the external ground member in a contact state and a conductive adhesive layer containing a conductive residue to make the Description The temperature at which the resin is softened is pressurized while the conductive member is heated, and the conductive layer is coated with the conductive layer, thereby protruding the conductive particles longer than the layer thickness of the cover film. Arranging to the metal thin film layer to be grounded. According to the grounding method, when the conductive member is attached to the mask film including the money film, the metal impurity layer, and the adhesive layer by heating and pressurization, the mask film The cover film formed of the resin therein is softened by heating, and when connected, the layer thickness of the cover film is thinner than the average protruding length of the conductive particles protruding from the conductive adhesive layer in the conductive member, and therefore, 201112941^ The conductive particles protruding from the conductive adhesive layer can penetrate the mask film and reach the metal thin film layer. Therefore, the potential of the metal layer of the mask can be grounded via the conductive particles. It is not necessary to connect the metal thin film layer in the grounding conductor disk mask film as in the past. Therefore, it is not necessary to process the substrate in advance to expose the ground conductor, and the processing cost is not incurred. Further, since only the conductive member is attached to the mask film, the mask film can be easily grounded at a desired position even when, for example, a long substrate is used. Advantageous Effects of Invention According to the mask film of the present invention, since the potential of the metal thin film layer in the mask film can be grounded and potentiald via the conductive particles, it is not necessary to process the substrate in advance to expose the ground conductor. The cost will not cost the processing. In addition, since only the conductive member is attached to the mask film, the mask film can be easily grounded at a desired position. The above description is only an overview of the technical solutions of the present invention, and the technical means of the present invention can be more clearly understood, and can be implemented in accordance with the description of the present invention. [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. (Overall Configuration) As shown in FIG. 1, the mask film 20 of the present invention is connected to the conductive member 30 by heating and pressurization, and the conductive member 30 includes a metal layer for contact with an external ground member in a contact state and Containing conductive particles 35
At 201112941 導二性接著層33，所述遮罩膜2G包括：覆蓋膜Μ，由因 =、、、而軟化的樹脂所形成，當藉由加熱以及加壓來連接 為比從導電性接著層33突出的導電性粒子35的 長度L2更薄的層厚度u，並且接著於導電性接 著^ 23，。以及依次層疊於覆蓋膜25的金屬薄膜層24及接 平電圖1所示，本發明的遮罩膜20貼附於柔性扁 下的相具有導電體的基板上，該遮罩膜2G具有如 訊^匕·減輕來自電信號的多餘輻射或來自外部的雜 柔性扁調ίΓ使柔性扁平電镜10與連接於該 ^电，-覽10的汉備之間不會產生阻抗的不匹配。 此外，因為本發明的遮罩臈20藉由加埶以及加懕而、查 接於與外部接地構^ i而連 臈的電位設為接地導電構件3G，所以可將該遮罩 連接此ί二斤謂「連接」是指兩個以上的構件至少進行電 二謂「連接」是指伽。與導電構 (導電構件30) 3〇 20 :有如下的構成··在以接觸狀;乂 電性接著層33人“ 導電性粒子35的導 錫層等的鍍敷層31_ θ 32上’更施加有鑛金層、鍍 (導電性接著層33) 201112941 導電構件30中所含的導電性接著層33形成為導電性 $子35與接著劑34 (丙烯酸（acryiic)系樹脂等）的混 合體j即’導電性接著層33是使導電性粒子35分散在丙 婦酉文系耐月曰4的接著劑34中而成的。導電性接著層W的 電連接，是藉由接著劑34内的1個或多個導電性粒子35 f導電性接㈣層33的厚度方向上賴祕觸來實現並 藉由接著劑34的接著力來保持。 (接著劑34) • * _導電性接著層33巾所含的接著劑34，可列舉丙 烯酸系樹脂、環氧（epoxy)系樹脂、矽（silic〇n)系樹脂、 熱塑性彈性體（elastomer)系樹脂、橡勝（gum)系樹脂、 :及聚酯（P〇lyester)系樹脂等。再者，接著劑34既可以 是所述樹脂的單體’也可以是所述翻的混合體。 另外，接著劑34也可更包含增粘劑。作為增粘劑，可 列舉脂肪酸烴樹脂、C5/C9混合樹脂、松香（r〇sin)、松香 何生物、特殊樹脂、結烯（terpene)樹脂、芳香族系煙樹 • 脂、以及熱反應性樹脂等的增粘劑（tackifler)。 (導電性粒子35) 藉由金屬材料來形成導電性接著層33中所含的導電 性粒子35的-部分或全部。例如，導電性粒子％有銅粉、 銀粉、鎳（niCkel)粉、覆蓋有銀的銅粉（覆蓋有Ag的 Cu粉）、覆蓋有金的銅粉、覆蓋有銀的鎳粉（覆蓋有八苢 的Νι粉）、以及覆蓋有金的鎳粉，可藉由水霧化法 atomization method)、羰基法（carb〇nyl 触福）等來製作 [Si 11 201112941 ^ Λ. W 廷些金屬粉。另外，除了所述粉以外，還 == 二：著金= 覆蓋有Ag的Ni粉。原因在於可藉由二:二:得J 電性提高的導電錄子35。 ㈣I獲传導 另外，如圖4 (a)所示，導電性粒子％處於盘 層32接觸的狀態，並且在貼附於遮罩膜2〇的，、 電性粒子35的一部分從導電性接著層33 μ (金屬層32) °At 201112941, the second interlayer layer 33, the mask film 2G includes: a cover film, which is formed of a resin softened by =, ,, and is connected by a heat and pressure to a conductive adhesive layer. The length L2 of the protruding conductive particles 35 is thinner than the layer thickness u, and is then followed by conductivity. And the metal thin film layer 24 laminated on the cover film 25 in this order and as shown in FIG. 1 , the mask film 20 of the present invention is attached to a flexible flat substrate having a conductor, the mask film 2G having讯 匕 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻 减轻In addition, since the mask 20 of the present invention is connected to the external grounding structure by twisting and twisting, and the potential connected to the external grounding structure is set as the grounding conductive member 3G, the mask can be connected to the mask. "Jian" means "connected" means that at least two members are connected to each other. The conductive structure (conductive member 30) 3〇20 has the following structure: in a contact state; the electroconductive adhesive layer 33 is on the plating layer 31_ θ 32 of the conductive layer of the conductive particles 35, etc. A gold deposit layer and a plating layer (conductive back layer 33) are applied. 201112941 The conductive adhesive layer 33 contained in the conductive member 30 is formed as a mixture of the conductive material 35 and the adhesive 34 (acryiic resin or the like). j, that is, the conductive adhesive layer 33 is obtained by dispersing the conductive particles 35 in the adhesive 34 of the sylvestre-resistant ruthenium 4. The electrical connection of the conductive adhesive layer W is by the adhesive 34. The one or more conductive particles 35 f are electrically connected to the (four) layer 33 in the thickness direction and are held by the adhesive force of the adhesive 34. (Adhesive 34) • * _ Conductive adhesive layer 33 Examples of the adhesive 34 contained in the towel include an acrylic resin, an epoxy resin, a silica resin, a thermoplastic elastomer, and a gum resin: Polyester (P〇lyester) resin, etc. Further, the adhesive 34 may be a monomer of the resin' Further, the adhesive 34 may further contain a tackifier. Examples of the tackifier include fatty acid hydrocarbon resins, C5/C9 mixed resins, rosin (r〇sin), rosin Ho, and special resins. A tackifier such as a terpene resin, an aromatic tobacco resin, or a heat-reactive resin. (Electroconductive particle 35) The conductive adhesive layer 33 is formed of a metal material. Part or all of the conductive particles 35. For example, the conductive particles % include copper powder, silver powder, nickel (niCkel) powder, copper powder coated with silver (Cu powder covered with Ag), and copper powder covered with gold. Nickel powder covered with silver (a powder covered with gossip) and nickel powder covered with gold can be produced by atomization method, carbonyl method (carb〇nyl), etc. 11 201112941 ^ Λ. W Some metal powders. In addition, in addition to the powder, == 2: Gold = Ni powder covered with Ag. The reason is that the conductivity can be improved by two: two: Record 35. (4) I is conducted. In addition, as shown in Fig. 4 (a), the conductive particles % are in the disk. The layer 32 is in contact with the state, and is attached to the mask film 2, a part of the electric particle 35 is from the conductive adhesive layer 33 μ (metal layer 32) °
導電構件30中所含的金屬層32是由鎳、鋼、銀、錫、 金、鈀（palladium )、鋁（aluminium )、鉻 r a 、 y 将 Uhrome)、鈦 C htanium )、鋅、以及包含這些材料中的任—種材料或2 以上的材料的合金等的金屬材料所形成。 5 另外，如圖2所示，金屬層32連接於樞體等的外部接 地構件，該金屬層32的電位保持為接地電位。 ° 而且’在金屬層32上施加有鍍金層、鍍錫層等的鍍敷 層31。 又The metal layer 32 contained in the conductive member 30 is made of nickel, steel, silver, tin, gold, palladium, aluminum, chromium ra, y, Uhrome, titanium, titanium, and the like. A metal material such as any material in the material or an alloy of two or more materials. Further, as shown in Fig. 2, the metal layer 32 is connected to an external ground member such as a hub, and the potential of the metal layer 32 is maintained at the ground potential. Further, a plating layer 31 such as a gold plating layer or a tin plating layer is applied to the metal layer 32. also
(遮罩膜20) 如圖1所示’使用所述導電構件30來接地的本發明的 遮罩膜20以成層的方式依次層疊著具有接著層21的插入 層22、具有接著層23的金屬薄膜層24、以及覆蓋膜25。 (覆蓋膜25) 遮罩膜20中所含的覆蓋膜25是由環氧系、聚酯系、 丙烯酸系、苯酚（Pheno1)系、氨酯（urethane)系等的樹 12 201112941. 脂或這些樹脂的混合物所形成。 此處，圖1中的圓部E是將導電構件30内的導電性 接著層33接著於覆蓋膜25的情況予以放大的部分。 如圖1的圓部E所示，當導電構件30連接於遮罩膜 20時，導電構件30内的導電性接著層33連接於遮罩膜2〇 内的覆蓋膜25。當實現該接著時，覆蓋膜25被從導電構 件30侧加熱而軟化。(Mask film 20) As shown in FIG. 1, the mask film 20 of the present invention which is grounded using the conductive member 30 is laminated in a layered manner with the interposer layer 22 having the adhesive layer 21 and the metal having the adhesive layer 23 The film layer 24 and the cover film 25. (Cover Film 25) The cover film 25 contained in the mask film 20 is made of an epoxy-based, polyester-based, acrylic-based, phenol (Pheno1)-based or urethane-based tree 12 201112941. A mixture of resins is formed. Here, the round portion E in Fig. 1 is a portion in which the conductive subsequent layer 33 in the conductive member 30 is followed by the cover film 25. As shown by the circular portion E of Fig. 1, when the conductive member 30 is attached to the mask film 20, the conductive adhesive layer 33 in the conductive member 30 is connected to the cover film 25 in the mask film 2''. When this succeeding is achieved, the cover film 25 is heated and softened from the side of the conductive member 30.
另外，形成覆蓋膜25的環氧系樹脂是由在將導電構件 30連接於遮罩膜2〇時的加熱溫度下軟化的樹脂所形成， 該樹脂的軟化溫度處於1〇〇。(：〜14〇。(：：的範圍。 胃另外，如圖1的圓部E所示，導電性粒子35存在於 導電構件30内的導電性接著層33的内部。當將遮罩膜2〇 ^導電構件30予以連接時，該導電性粒？ ％❾一部分從 J電性接著層33突出’該突出部的導電性粒子35的平均 突出長度L2被設定得比覆蓋膜25的層厚度以更長。 (金屬薄膜層24) 遮罩膜20中所含的金屬薄膜層24具有減輕來自電信 唬的多餘輻射或來自外部的雜訊的遮罩效果。 另外，因為連接於外部接地構件的導電構件3〇藉由加 空而連接於遮罩膜2。，所以金屬薄膜層24經由 導雷導電性接著層33内的導性粒子35而與 2〇ϋ 接。藉此，可通過導電構件30來將遮罩膜 作為开/成該金屬薄膜層Μ的金屬材料，可列舉錄、 201112941 ， 銅、銀、錫、金、鈀、鋁、鉻、鈦、鋅、以及包含這些材 料中的任一種材料或2種以上的材料的合金等。另外，根 據所需的遮罩效果以及对反覆彎曲性、耐滑動性來適當地 選擇金屬薄膜層24的金屬材料以及厚度即可，但對於厚度 而言，設為3 μηι〜20 μηι左右的厚度即可。另外，較佳為 6 μηι〜15 μιη，更佳為9 μιη〜12 μιη。若厚度不足3 μιη， 則無法獲得充分的傳輸特性，若厚度超過2〇 μιη，則彎曲 性成為問題。此外，金屬薄膜層24可考慮使用金屬箔、鍍 敷層等，但較佳為金屬箔。 (插入層22) t遮罩膜20中所含的插入層22是由聚對苯二曱酸乙二 酯（polyethylene terephthalate)、聚乙烯（p〇lyethylene)、 聚丙烯（polypropylene )、發泡聚對苯二甲酸乙二酯、發泡 聚乙烯、發絲_、錢不織布等所構成，且利用接著 層23而層4於金㈣縣24，藉此來進—步增加遮罩膜 20的厚度。另外，藉由對該厚度進行調整，在將遮罩膜2〇 貼附於柔性扁平魏1G時’可對柔性扁平電纜⑴的阻抗 ^亍調&。*且’可藉由接著層21來將插人層接著於 ^扁平 1G。根據此種構成，遮罩膜2()可藉由接著 層23的接著來將插入層^ ^ 此，藉由雜人層22的厚戶扁千魏1〇和如 10的阻抗進行調整。因此，心❸“了綠針碰 螬私 4罩膜20包括對柔性扁平電 纜10的阻杬進订調整的層與具 遮罩膜20雜於祕料㈣*㈣值猎由將 屙十電纜10的一個步驟，就既可對 201112941 IDUpif 柔性扁平電纜10賦予遮罩效果，又可對該柔性扁平電纜 10賦予阻抗控制效果。 (接者層21、23) 遮罩膜20中所含的接著層21、23是由烯烴（olefin) 糸、氰自旨系、醋酸乙稀醋（vinyl acetate)系、聚醋系、聚 醯胺（polyamide)系、橡膠系、及丙烯酸系等的熱塑性樹 脂’或笨酚系、環氧系、氨酯系、三聚氰胺（melamine) 系、聚蕴亞胺（P〇1yimide)系、及醇酸（alkyd)系等的熱 硬化型樹脂所構成。可藉由接著層21來將插入層22接著 於柔性扁平電纜10。另外，可藉由接著層23來將金屬薄 膜層24接著於插入層22。 若使用具有所述構成的遮罩膜2〇,則當藉由加熱以及 加壓來將導電構件30連接於包括覆蓋膜25、金屬薄膜層 24、以及接著層23的遮罩膜2〇時，遮罩膜2〇内的由樹脂 所形成的覆蓋膜25因加熱而軟化，而且在連接時，覆蓋膜 25的層厚度]^比從導電構件3〇内的導電性接著層33突 • 出的導電性粒子35的平均突出長度L2更薄，因此' 因加 壓而從導電性接著層33突出的導電性粒子35可穿破遮罩 膜20内的覆蓋膜25而到達金屬薄膜層24為止。藉此，因 為可經由導電性粒子35來使遮罩膜2〇内的金屬薄9膜層24 的電位為接地電位，所以無需像以往那樣，將貼附著遮罩 膜20的基板内的接地導體與遮罩膜2〇内的金屬薄膜層 予以連接。因此，既不需要預先對基板進行加工來使^地 導體露出的工夫，也不會耗費加工成本。另外，因為僅將Further, the epoxy resin forming the cover film 25 is formed of a resin softened at a heating temperature when the conductive member 30 is attached to the mask film 2, and the softening temperature of the resin is 1 Torr. (:~14〇. (:: range). In addition, as shown in the round portion E of Fig. 1, the conductive particles 35 are present inside the conductive adhesive layer 33 in the conductive member 30. When the mask film 2 is to be used When the conductive member 30 is connected, a part of the conductive particles % protrudes from the J electrical adhesive layer 33. The average protruding length L2 of the conductive particles 35 of the protruding portion is set to be larger than the layer thickness of the cover film 25. (Metal film layer 24) The metal film layer 24 contained in the mask film 20 has a masking effect of alleviating unwanted radiation from the telecommunication weft or noise from the outside. In addition, since it is electrically connected to the external grounding member The member 3 is connected to the mask film 2 by emptying, so that the metal thin film layer 24 is connected to the second conductive layer 35 in the conductive conductive adhesive layer 33. Thereby, the conductive member 30 can be passed through The mask film is used as a metal material for opening/forming the metal thin film layer, which can be enumerated, 201112941, copper, silver, tin, gold, palladium, aluminum, chromium, titanium, zinc, and any of these materials. Material or alloy of two or more materials, etc. The metal material and the thickness of the metal thin film layer 24 may be appropriately selected according to the desired masking effect and the reversible bending property and the sliding resistance. However, the thickness may be set to a thickness of about 3 μηη to 20 μηι. Further, it is preferably 6 μm to 15 μm, more preferably 9 μm to 12 μm. When the thickness is less than 3 μm, sufficient transfer characteristics cannot be obtained, and if the thickness exceeds 2 μm, bending property is a problem. The metal thin film layer 24 may be a metal foil, a plating layer or the like, but is preferably a metal foil. (Insert Layer 22) The insertion layer 22 contained in the t-mask 20 is made of polyethylene terephthalate. (polyethylene terephthalate), polyethylene (p〇lyethylene), polypropylene (polypropylene), expanded polyethylene terephthalate, expanded polyethylene, hair _, money non-woven fabric, etc., and using the adhesive layer 23 The layer 4 is in the gold (four) county 24, thereby increasing the thickness of the mask film 20. Further, by adjusting the thickness, when the mask film 2 is attached to the flexible flat Wei 1G, Impedance to flexible flat cable (1) &.* and 'the insert layer can be followed by the flat 1G by the layer 21. According to this configuration, the mask film 2() can be inserted by the layer 23, The adjustment is made by the impedance of the thick layer of the heterogeneous layer 22 and the impedance of 10, and therefore, the heart is "green needle" 4 cover film 20 includes the adjustment of the resistance of the flexible flat cable 10 The layer and the masked film 20 are mixed with the secret material (4)*(4) value by a step of the 屙10 cable 10, which can impart a masking effect to the 201112941 IDUpif flexible flat cable 10, and the flexible flat cable 10 can be given Impedance control effect. (Contact Layers 21, 23) The adhesive layers 21 and 23 contained in the mask film 20 are composed of an olefin, a cyanide, a vinyl acetate, a polyester, and a polyfluorene. A thermoplastic resin such as a polyamide, a rubber or an acrylic resin, or a phenol-based, epoxy-based, urethane-based, melamine-based, phthalimin-based, or alkyd. It is composed of a thermosetting resin such as (alkyd). The insertion layer 22 can be followed by the flexible flat cable 10 by the adhesive layer 21. Alternatively, the metal film layer 24 can be attached to the interposer layer 22 by the adhesion layer 23. When the mask film 2A having the above configuration is used, when the conductive member 30 is attached to the mask film 2 including the cover film 25, the metal thin film layer 24, and the adhesive layer 23 by heating and pressurization, The cover film 25 made of a resin in the mask film 2 is softened by heating, and at the time of connection, the layer thickness of the cover film 25 is larger than that from the conductive adhesive layer 33 in the conductive member 3〇. Since the average protruding length L2 of the conductive particles 35 is thinner, the conductive particles 35 protruding from the conductive adhesive layer 33 by the pressure can penetrate the cover film 25 in the mask film 20 and reach the metal thin film layer 24. Thereby, since the potential of the thin metal film layer 24 in the mask film 2 can be grounded via the conductive particles 35, it is not necessary to ground the ground conductor in the substrate of the mask film 20 as in the related art. It is connected to the metal thin film layer in the mask film 2〇. Therefore, it is not necessary to process the substrate in advance to expose the conductor, and the processing cost is not required. Also, because only
ί S 15 201112941 / 導電構件30連接於遮罩膜20，所以即使例如在使用了長 條狀的基板時，仍可在預期的位置容易地將遮罩膜20接 地。 (柔性扁平電纜10) 接著，對貼附於具有所述構成的遮罩膜20的柔性扁平 電纜10進行說明。如圖1所示，柔性扁平電纜10具有如 下的構成：在基礎膜14上，包括信號導體11與接地導體 12的多個導體並排地排列在寬度方向上，而且在所述多個 導體上設置著絕緣膜13。 基礎膜14與絕緣膜13均由工程塑料（engineering plastic)所形成。例如，可列舉聚對苯二甲酸乙二醋、聚 丙烯、交聯聚乙烯、聚酯、聚苯並咪唑 (polybenzimidazole)、聚醯亞胺、聚醯亞胺聚醯胺、聚醚 醯亞胺（polyetherimide)、以及聚苯硫醚（p〇iy Phenylene Sidfide，PPS)等的樹脂。當不太要求耐熱性時，較佳為 廉價的聚酯膜，當要求阻燃性時，較佳為聚苯硫醚膜，此 外，當要求耐熱性時，較佳為聚醯亞胺膜。 另外，在將基礎膜14與信號導體π及接地導體 予以接合時，可藉由接著财進行接著，也可對樹脂 擠出成形。 另外，如圖3所示，在牟料鱼正帝游 朱往扁千電纜的端部設置右 :=高使柔性扁平電_連接器(_—4 具有所述構成的柔性4平電€lG藉由遮罩膜20内的 201112941 jupif 金屬薄膜層24來使電路信號變得穩定。而且，柔性扁平+ 規10在遮罩膜20的作用下，具有電磁遮罩效果。 包 再者，遮罩膜20除了可用於柔性扁平電纜之外還可 用於柔性電路板（Flexible Printed Circuit，FPC)、养载从 日日片的柔性電路板（Chip On Flexible，COF )、Rp ^柔 印刷板）、多層柔性基板、以及硬質（rigid)基板等，但 不一定限於這些基板。 一並 另外，如圖2所示，柔性扁平電纜1〇的接地導體 與導電構件30同樣地連接於所裝人㈣子設備的 的外部接地構件，藉此，接地導體Η與導電構件 接地電位。而且，如上所述，可經由物生粒子^ 來將¥電構件30與遮罩膜2〇設為相同電位，因此 遮罩膜20與接地導體12為相同的接地電位。 (遮罩配線板1 ) 接著’對由遮罩膜20與柔性扁平電 配線板1進行說明。 饵風的遮罩 如圖1以及圖3所示’本發明的遮罩 下的構成：藉由一塊逆戍板1具有如 〔FFD 、 罩 而貼在柔性扁平電纜10 (FFC)的早面或兩個面上，或者包裹在羊 ^0 的兩個面上，導雷椹杜Μ 4时从 届平電欖1〇 即工★«構件30連接於遮罩膜2〇。 如上所述’因為導電構件3G連接於遮罩膜2 〜過連接於框體等的外部接地構丰以 遮罩膜20接地。 輯叫電構件30來使 (遮罩膜20的接地方法） 17 201112941 的二=U)、圖4⑴來詳細地對遮罩膜2。 如圖4 (a)、圖4 (b)所示，本發明的遮罩膜2〇的接 地方法，是包括由樹脂所形成的覆蓋膜25、以及依次層疊 於覆蓋膜25的金屬薄膜層24及接著層23的遮罩膜 接地方法，導電構件3〇包括接觸狀態下的連接於外部接地 構件的金屬層32及包含導電性粒子35的導電性接著層 33，以使樹脂軟化的溫度來對該導電構件3〇 一邊加熱、二 邊加壓’將導電性接著層33與覆蓋膜25予以接著，&此， 突出得比覆蓋膜25的層厚度L1更長的導電性粒子3曰 達金屬薄膜層24為止，從而接地。 •T先，如圖4 (a)所示，將保持為接地電位的 件30對準遮罩膜2〇，並從導電構件3〇側進行加熱。此 的加熱溫度設為使樹脂所形成的覆蓋膜25軟化的1〇〇它〜 Η〇ΐ的範圍，藉由該加熱，覆蓋膜25開始軟化。再者了 此時的加熱溫度較佳為12(rc〜13n：，若該加敎溫 ^ :則無法獲得充分的接著。另外’若所述加熱^度超 ，140C ’則會對柔性扁平魏1()造成損傷u嶋㈣， 因此不佳。接著，賴蓋膜25進行加熱之後，從導電構 “側向遮罩膜20加壓，藉此，導電構件3〇内的導電性 者層33進-步⑥、著於覆蓋膜25。此時，覆蓋膜因軟 而具有钻著性，從導電性接著層33突出的導電性粒S S 15 201112941 / The conductive member 30 is connected to the mask film 20, so that the mask film 20 can be easily grounded at a desired position even when a long substrate is used, for example. (Flexible Flat Cable 10) Next, the flexible flat cable 10 attached to the mask film 20 having the above configuration will be described. As shown in FIG. 1, the flexible flat cable 10 has a configuration in which a plurality of conductors including a signal conductor 11 and a ground conductor 12 are arranged side by side in the width direction on the base film 14, and are disposed on the plurality of conductors. The insulating film 13 is placed. Both the base film 14 and the insulating film 13 are formed of an engineering plastic. For example, polyethylene terephthalate, polypropylene, crosslinked polyethylene, polyester, polybenzimidazole, polyimine, polyamidamine, polyether quinone (polyetherimide), and a resin such as p〇iy Phenylene Sidfide (PPS). When heat resistance is not required, an inexpensive polyester film is preferred. When flame retardancy is required, a polyphenylene sulfide film is preferred. Further, when heat resistance is required, a polyimide film is preferred. Further, when the base film 14 is joined to the signal conductor π and the ground conductor, the resin can be extruded and formed by subsequent deposition. In addition, as shown in Figure 3, set the right at the end of the squid fish Zhengdi Tour Zhu to the flat thousand cable: = high to make the flexible flat electric _ connector (_-4 with the described flexible 4 flat electricity € lG The circuit signal is stabilized by the 201112941 jupif metal thin film layer 24 in the mask film 20. Moreover, the flexible flat gauge 10 has an electromagnetic mask effect under the action of the mask film 20. In addition to being used for a flexible flat cable, the film 20 can also be used for a Flexible Printed Circuit (FPC), a Chip On Flexible (COF), a Rp ^ flexible printed board, and a multilayer. A flexible substrate, a rigid substrate, or the like is not necessarily limited to these substrates. Further, as shown in Fig. 2, the ground conductor of the flexible flat cable 1 is connected to the external grounding member of the mounted (four) sub-device in the same manner as the conductive member 30, whereby the ground conductor Η and the conductive member are grounded. Further, as described above, since the photovoltaic member 30 and the mask film 2 are set to the same potential via the material particles, the mask film 20 and the ground conductor 12 have the same ground potential. (Mask wiring board 1) Next, the mask film 20 and the flexible flat wiring board 1 will be described. The mask of the bait wind is as shown in FIG. 1 and FIG. 3 'under the mask of the present invention: the front side of the flexible flat cable 10 (FFC) is attached to the flexible flat cable 10 (FFC) by a FFF, a cover, or On both sides, or wrapped on the two faces of the sheep ^0, the thundering 椹 Μ Μ 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 As described above, the mask film 20 is grounded because the conductive member 3G is connected to the mask film 2 to the external ground structure that is connected to the frame or the like. The electric component 30 is called to make the mask film 2 in detail (the second method of the grounding method of the mask film 20) 17 201112941, and Fig. 4 (1). As shown in FIGS. 4(a) and 4(b), the method of grounding the mask film 2 of the present invention includes a cover film 25 formed of a resin, and a metal thin film layer 24 laminated on the cover film 25 in this order. And a method of grounding the mask film of the second layer 23, the conductive member 3 includes a metal layer 32 connected to the external ground member in a contact state and a conductive adhesive layer 33 containing the conductive particles 35 to soften the temperature of the resin The conductive member 3 is heated and pressed on both sides to carry out the conductive adhesive layer 33 and the cover film 25, and the conductive particles 3 which are longer than the layer thickness L1 of the cover film 25 are protruded. The metal thin film layer 24 is grounded. • T first, as shown in Fig. 4 (a), the member 30 held at the ground potential is aligned with the mask film 2, and heated from the side of the conductive member 3 . The heating temperature is set to a range of 1 〇〇 to Η〇ΐ which softens the cover film 25 formed of the resin, and by this heating, the cover film 25 starts to soften. Furthermore, the heating temperature at this time is preferably 12 (rc~13n: if the twisting temperature is ^, then sufficient follow-up cannot be obtained. In addition, if the heating degree is too high, 140C' will be flexible flat Wei 1() causes damage u (4), and thus is not preferable. Then, after the cover film 25 is heated, the conductive film "the lateral mask film 20 is pressurized, whereby the conductive layer 33 in the conductive member 3" Further, step 6. is applied to the cover film 25. At this time, the cover film is drilled due to softness, and the conductive particles protrude from the conductive adhesive layer 33.
Si覆蓋^ 25内。此處’當遮罩膜2〇與導電構件30 連接時’料電性接著層33突出的導電性粒子％的平均 201112941 jjuupif 突出長度L2比覆蓋膜的層厚戶 電構件30側進-步進行加壓;®此’藉由從導 膜Μ並到達金屬薄膜層24為止h性粒子35會穿破覆蓋 稽此，如圖4 (b)所千，a p 經由導·好35而朗導^^層32與金屬薄膜層24 Μ的電位設為接地電^導通狀純而可將金屬薄膜層 導電崎接財法，#_相及加壓來將 件3G連接於包括覆蓋膜25、金屬細層％以及接 h的遮罩膜2G時’遮罩臈2G内的由樹脂所形成的覆 =25因加熱而軟化’而且在連接時，覆蓋膜乃的層厚 fU比從導電構件30 _導電性接著層33突出的導電 子35的平均犬出長度L2更薄，因此，因加壓而從導 接著層33突出的導電性粒子％可穿破遮罩膜内的覆 盍膜25而到達金屬薄膜層24為止。藉此，因為可經由導 電性粒子35來使遮罩膜2G _金屬薄膜層24的電位為接 地電位，所以無需像以往那樣，將貼附著遮罩膜20的基板 内的接地導體與遮罩膜20内的金屬薄膜層24予以連接。 因此，既不要需預先對基板進行加工來使接地導體露出的 工夫，也不會耗費加工成本。另外，因為僅將導電構件3〇 連接於遮罩膜20，所以即使例如在使用了長條狀的基板 時’仍可在預期的位置容易地將遮罩膜2〇接地。 (遮罩膜20的製造方法） 接著，使用圖5來對遮罩膜20的製造方法進行說明。 如圖5所示，本實施方式的遮罩膜20的製造方法包 19 201112941 括：卷出步驟，將捲繞成卷狀的金屬薄膜層2 驟二在金屬薄膜層24上形成覆蓋膜25，·接“ 成金屬薄膜層24上形成捿著層23;插入層形 ^接著層23來貼合具有接著層21的插入層22 而形成遮罩膜20 ;以及纏έ堯步驟，辟辦讲，士 每 纏繞成卷狀。乂及纏⑼步驟將所形成的遮罩膜20 具體而言’首先在卷出步驟令，將放置（ 機41上的卷狀的金屬薄膜層％卷出。然後，—邊Si covers ^ 25 inside. Here, 'when the mask film 2 is connected to the conductive member 30, the average 201112941 jjuupif protruding length L2 of the conductive particles protruding from the electrical property layer 33 is further advanced than the layer thickness of the cover film. Pressurization; ® this will pass through the film from the film and reach the metal film layer 24, and the h particles 35 will be pierced and covered. As shown in Figure 4 (b), ap will be guided by the guide 35. The potential of the layer 32 and the metal thin film layer 24 is set to be grounded, and the metal thin film layer can be electrically connected, and the metal film can be connected to the cover film 25 and the fine metal layer. % and the mask film 2G of h, 'the cover formed by the resin in the mask 臈 2G = 25 is softened by heating' and the layer thickness fU of the cover film at the time of connection is more than the conductivity from the conductive member 30 Then, the average length L2 of the conductors 35 protruding from the layer 33 is thinner. Therefore, the conductive particles protruding from the conductive layer 33 by the pressure can penetrate the covering film 25 in the mask film to reach the metal film. Layer 24 up to now. Thereby, since the potential of the mask film 2G_metal thin film layer 24 can be grounded via the conductive particles 35, it is not necessary to ground the ground conductor and the mask film in the substrate to which the mask film 20 is attached as in the related art. The metal thin film layer 24 in 20 is joined. Therefore, it is not necessary to process the substrate in advance to expose the ground conductor, and the processing cost is not required. Further, since only the conductive member 3 is connected to the mask film 20, the mask film 2 can be easily grounded at a desired position even when, for example, a long substrate is used. (Method of Manufacturing Mask Film 20) Next, a method of manufacturing the mask film 20 will be described with reference to Fig. 5 . As shown in FIG. 5, the manufacturing method package 19 201112941 of the mask film 20 of the present embodiment includes a winding-out step of forming a cover film 25 on the metal thin film layer 24 by winding the metal thin film layer 2 wound in a roll shape. · forming a ruthenium layer 23 on the metal film layer 24; inserting the layer layer 23 to bond the insertion layer 22 having the adhesive layer 21 to form the mask film 20; and the entanglement step, Each winding is wound into a roll. The step of winding and entanglement (9) will form the mask film 20 specifically 'first in the winding-out step, which will be placed (the roll of the metal film layer on the machine 41 is rolled out. Then, -side
輥(roller)來對所卷出的金屬_層24進行彳丨導（糾 一邊使該金屬薄膜層24向塗佈裝置42移動。 接著，在覆蓋膜形成步驟中，藉甴塗佈裝置42 氧系樹脂等塗剌金屬薄膜層24上，在乾職43中姑^ =’從_成覆蓋膜25。然後，再次—邊㈣導報進行 弓丨導’一邊向塗佈裝置44移動。 接著，在接著層形成步驟中，藉甴塗佈裝置44來將熱 ，性樹脂或熱硬化賴脂塗佈卿成有覆蓋膜Μ的金屬Roller to guide the rolled metal layer 24 (correcting the metal film layer 24 to the coating device 42. Next, in the cover film forming step, the coating device 42 is oxygenated The coated metal film layer 24 such as a resin is applied to the cover film 25 in the dry position 43. Then, the film is moved to the coating device 44 while being guided again. In the layer forming step, the coating device 44 is used to coat the hot resin or the heat-cured lyophilized metal into the film-coated metal.
薄膜層24’在乾燥爐45中經過乾燥，從而形成接著層23。 然後，在插入層形成步驟中，藉甴貼合機46來^預先 f外製造的具有接著層21的插入層22，貼合到形成有覆 蓋膜25與接著層23的金屬薄膜層24上，從而製造遮 20。 、 ^後，一邊由引導輥來對完成的遮罩膜2〇進行引導， 一邊藉由纏繞機47來將該遮罩膜20逐漸纏繞成卷狀。藉 此’可製造本實施方式的遮罩膜2〇。 20 201112941 丹有 3丁不贫明的一個貫她方式進行了說明 本發明不必限定於所述實施方式。 例如’在本實施方式的情況下，導電性粒子％的剖面 ^圓形的形狀’料錄定於此，只要在連接時，血金 屬層32接觸，且從導電性接著層33突出的平均异 =匕覆蓋膜25的層厚度L1更長，則所述導紐粒子= # d面也可具有_(只要是橢圓形、雞蛋形等角帶 =狀即可)、樹突（dendrite)形狀、鱗片形狀、針形 f、鎖鏈形狀、尖峰（_e)形狀等任-個形狀。再者， #父佳為圓形。 考 ㈣ί外’在圖4⑷、圖4⑴尹，導電構件30為如下 抑不3 ·在導電性接著層33的厚度方向上包含1個導電性 多個該導電性粒子％排列在導電性接著層幻 f度方向上’但本發明不必限定於此。例如，導電 ^的厚度方向上所含的導電性粒子％不限於i個妾: :艮V電性粒子35的粒子徑，將多個導電性粒子3 接觸狀態下連續地排列在導電性接著層33的厚度方向上在 4“另外’在圖5的遮罩膜20的製造方法中，藉由貼合機 罢胺f預先形成有接著層21的插入層22貼合於形成有覆 ^ 與接著層23的金屬薄膜層24，但不必限定於此， 、可在形成有覆蓋膜25與接著層Η的金屬薄膜層Μ -人形成插入層22與接著層21。 依 “ 上’對本發明的實例進行了說明，但僅對具體例進 仃歹|不’亚不特別地限定本發明，可適當地對具體的構 201112941 1 ^ vpif :=及效果並不限定於本發明的實施方二= 上所於柔性爲平電纜等的具有導電體的基板 上所使用的鱗Μ、及具㈣罩_遮罩配線板。 χ上所述，僅是本發明的較佳實施例而已，並非對太The film layer 24' is dried in a drying oven 45 to form an adhesive layer 23. Then, in the insertion layer forming step, the interposer 22 having the adhesive layer 21, which is manufactured in advance by the bonding machine 46, is bonded to the metal thin film layer 24 on which the cover film 25 and the adhesive layer 23 are formed, Thereby producing a cover 20. After that, the completed mask film 2 is guided by the guide roller, and the mask film 20 is gradually wound into a roll shape by the winding machine 47. By this, the mask film 2 of the present embodiment can be manufactured. 20 201112941 Dan has a description of the manner in which the three are not poor. The present invention is not necessarily limited to the embodiment. For example, in the case of the present embodiment, the cross-section of the conductive particles % and the shape of the circular shape are recorded as follows, as long as the blood metal layer 32 is in contact and the average difference from the conductive adhesive layer 33 is formed at the time of connection. If the layer thickness L1 of the ruthenium cover film 25 is longer, the guide beam particle = #d plane may have _ (as long as it is an ellipse, an egg-shaped equilateral band = shape), a dendrite shape, Any shape such as a scale shape, a needle shape f, a chain shape, and a peak (_e) shape. Furthermore, #父佳 is a circle. In the case of FIG. 4 (4) and FIG. 4 (1), the conductive member 30 is as follows. 3. In the thickness direction of the conductive adhesive layer 33, a plurality of conductive particles are contained. The conductive particles are arranged in a conductive layer. In the f direction, 'the invention is not limited thereto. For example, the conductive particles % contained in the thickness direction of the conductive material are not limited to the particle diameters of the 妾: : 艮 V electrical particles 35, and the conductive layers are continuously arranged in contact with the plurality of conductive particles 3 In the thickness direction of 33, in the manufacturing method of the mask film 20 of FIG. 5, the interposer layer 22 in which the adhesive layer 21 is formed in advance by the bonding machine f is bonded to the formed layer and then The metal thin film layer 24 of the layer 23 is not limited thereto, and the interposer layer 22 and the adhesive layer 21 may be formed on the metal thin film layer in which the cover film 25 and the adhesive layer 25 are formed. The example of the present invention is "upper" The description has been made, but the present invention is not particularly limited to the specific example, and the specific configuration 201112941 1 ^ vpif := and the effect are not limited to the embodiment 2 of the present invention. The scale is used for a substrate having a conductor such as a flat cable, and the cover plate is a cover plate. As described above, it is only a preferred embodiment of the present invention, not too
ί:ΓΓΜ上的限制，雖然本發明已以較佳實施例揭 —⑽以限定本發明，任何熟悉本專業 ’在不脫離本發明技術方錄_，當可利用上述 構及技術内容作出些許的更動或修飾為等同變化 2實施例，但是凡是未脫離本發明技術方案的内容， ^本發明的技術實質對以上實施例所作的任何簡單修 等同變化與修飾，均仍屬於本發明技術方案的範圍内。 【圖式簡單說明】 圖1是本發明實施方式的遮罩配線板的圖2的Α_Α, 線箭視剖面圖。限制 ΓΓΜ 限制 , , , , , 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然 虽然Modifications or modifications to the equivalent change 2 embodiment, but without departing from the technical solution of the present invention, any simple modifications and modifications made to the above embodiments of the technical spirit of the present invention are still within the scope of the technical solution of the present invention. Inside. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view taken along line 箭 Α of Fig. 2 of a mask wiring board according to an embodiment of the present invention.
圖2是表示本發明實施方式的遮罩配線板的外觀的 圖0 户圖3是本發明實施方式的遮罩配線板的圖2 的Β-Β’線 前視剖面圖。 圖4 (a)是表示本發明實施方式的遮罩膜的接地方法 中二將導電構件與遮罩膜予以連接之前的圖。圖4 (b)是 表示本發明實施方式的遮罩膜的接地方法中，將導電構件 22 201112941 ^3 13Upif 與遮罩膜予以連接時的圖。 圖5是表示本發明實施方式的遮罩膜的製造方法的 圖。 圖6是表示專利文獻1的柔性扁平電纜的剖面的圖。 圖7是表示專利文獻2的阻抗控制遮罩配線板的剖面 的圖。 【主要元件符號說明】 1 :遮罩配線板 Φ 10 :柔性扁平電繞 11、 51、61 :信號導體 12、 52、62 :接地導體 13 :絕緣膜 14、63 :基礎膜 20 :遮罩膜 21、23、53 :接著層 22 :插入層 φ 24 :金屬薄膜層 25 :覆蓋膜 30 :導電構件 31 :鍍敷層 32、 56 :金屬層 33、 55、59、65、68 :導電性接著層 34 :接著劑 35 :導電性粒子 [Si 23 201112941 jupifFig. 2 is a front cross-sectional view of the mask wiring board of the embodiment of the present invention taken along the line Β-Β' of the embodiment of the present invention. Fig. 4 (a) is a view showing a method of grounding a mask film according to an embodiment of the present invention, in which a conductive member and a mask film are connected. Fig. 4 (b) is a view showing a state in which the conductive member 22 201112941 ^ 3 13Upif is connected to the mask film in the grounding method of the mask film according to the embodiment of the present invention. Fig. 5 is a view showing a method of manufacturing a mask film according to an embodiment of the present invention. FIG. 6 is a view showing a cross section of a flexible flat cable of Patent Document 1. Fig. 7 is a view showing a cross section of an impedance control mask wiring board of Patent Document 2. [Explanation of main component symbols] 1 : Mask wiring board Φ 10 : Flexible flat electric winding 11, 51, 61: Signal conductors 12, 52, 62: Ground conductor 13: Insulating film 14, 63: Base film 20: Mask film 21, 23, 53: Adhesive layer 22: intercalation layer φ 24: metal thin film layer 25: cover film 30: conductive member 31: plating layer 32, 56: metal layer 33, 55, 59, 65, 68: conductivity followed by Layer 34: Adhesive 35: Conductive particles [Si 23 201112941 jupif
40 :加強板 41 :卷出機 42 、44 :塗佈裝置 43 、45 :乾燥爐 46 :貼合機 47 :纏繞機 50 :柔性扁平電纜 54 :發泡絕緣體 57 、67、70 :絕緣性膜 58 、71 :非絕緣部 60 :阻抗控制遮罩配線板 64 :絕緣層 66 :開口金屬薄膜層 69 :非開口金屬薄膜層 E : 圓部 LI :層厚度 L2 :平均突出長度40: reinforcing plate 41: unwinding machine 42, 44: coating device 43, 45: drying furnace 46: laminating machine 47: winding machine 50: flexible flat cable 54: foaming insulator 57, 67, 70: insulating film 58 , 71 : non-insulating portion 60 : impedance control mask wiring board 64 : insulating layer 66 : open metal thin film layer 69 : non-opening metal thin film layer E : round portion LI : layer thickness L2 : average protruding length
24twenty four
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-217650 | 2009-09-18 | ||
| JP2009217650A JP2011066329A (en) | 2009-09-18 | 2009-09-18 | Shield film, shielded wiring board including the same, ground connection method in the shield film |
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| Publication Number | Publication Date |
|---|---|
| TW201112941A true TW201112941A (en) | 2011-04-01 |
| TWI610614B TWI610614B (en) | 2018-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW099130909A TWI610614B (en) | 2009-09-18 | 2010-09-13 | Flexible flat cable |
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| JP (1) | JP2011066329A (en) |
| CN (1) | CN102026529A (en) |
| TW (1) | TWI610614B (en) |
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| CN102387656B (en) * | 2010-08-30 | 2013-10-09 | 富葵精密组件(深圳)有限公司 | Circuit board with grounding shield structure and manufacturing method thereof |
| KR20140099258A (en) | 2011-11-24 | 2014-08-11 | 다츠다 덴센 가부시키가이샤 | Shield film, shielded printed wiring board, and method for manufacturing shield film |
| JPWO2013183632A1 (en) * | 2012-06-07 | 2016-02-01 | タツタ電線株式会社 | Shield film and shield printed wiring board |
| JP6240376B2 (en) * | 2012-07-13 | 2017-11-29 | タツタ電線株式会社 | Shield film and shield printed wiring board |
| CN103763893B (en) * | 2014-01-14 | 2016-04-13 | 广州方邦电子股份有限公司 | Electromagnetic shielding film and comprise the manufacture method of wiring board of screened film |
| CN105101762B (en) * | 2014-05-06 | 2018-08-07 | 昆山雅森电子材料科技有限公司 | It is thinned high-transmission emi shielding film and its manufacturing method and application |
| TWI578893B (en) * | 2014-07-17 | 2017-04-11 | T-Kingdom Co Ltd | Shielding film and manufacturing method thereof |
| CN104332217B (en) * | 2014-10-08 | 2018-04-10 | 广州方邦电子股份有限公司 | Free ground film and preparation method thereof, shielded line plate and earthing method comprising free ground film |
| CN104658650A (en) * | 2015-01-23 | 2015-05-27 | 亳州联滔电子有限公司 | Flat cable |
| JP6187568B2 (en) * | 2015-09-17 | 2017-08-30 | 東洋インキＳｃホールディングス株式会社 | Laminated body for electromagnetic wave shield, electromagnetic wave shield laminated body, electronic device and manufacturing method thereof |
| CN105304219A (en) * | 2015-11-20 | 2016-02-03 | 苏州沃尔非自动化设备有限公司 | Lamination auxiliary tool having heating effect |
| JP6946437B2 (en) * | 2017-08-09 | 2021-10-06 | タツタ電線株式会社 | Manufacturing method of connection film and shield printed wiring board, and shield printed wiring board |
| CN110691501A (en) * | 2018-07-06 | 2020-01-14 | 广州方邦电子股份有限公司 | Electromagnetic shielding film, circuit board and preparation method of electromagnetic shielding film |
| JP7268446B2 (en) * | 2019-03-29 | 2023-05-08 | 東洋インキＳｃホールディングス株式会社 | Electromagnetic wave shielding sheet, electromagnetic wave shielding printed circuit board and electronic equipment |
| CN116669410B (en) * | 2023-07-03 | 2024-02-20 | 广州方邦电子股份有限公司 | Electromagnetic shield cover and circuit board |
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| JP3407737B2 (en) * | 2000-12-14 | 2003-05-19 | 株式会社デンソー | Multilayer substrate manufacturing method and multilayer substrate formed by the manufacturing method |
| JP2003086907A (en) * | 2001-06-29 | 2003-03-20 | Tatsuta Electric Wire & Cable Co Ltd | Shielded flexible printed wiring board |
| KR20050029312A (en) * | 2002-08-08 | 2005-03-25 | 다이니폰 인사츠 가부시키가이샤 | Electromagnetic wave shielding sheet |
| JP2007299704A (en) * | 2006-05-02 | 2007-11-15 | Hitachi Cable Ltd | Shielded flat cable |
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| TWI610614B (en) | 2018-01-01 |
| JP2011066329A (en) | 2011-03-31 |
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