TW201112347A - Making method of showerhead for semiconductor processing apparatus - Google Patents

Making method of showerhead for semiconductor processing apparatus Download PDF

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Publication number
TW201112347A
TW201112347A TW99129220A TW99129220A TW201112347A TW 201112347 A TW201112347 A TW 201112347A TW 99129220 A TW99129220 A TW 99129220A TW 99129220 A TW99129220 A TW 99129220A TW 201112347 A TW201112347 A TW 201112347A
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TW
Taiwan
Prior art keywords
material
substrate
protective film
manufacturing
Prior art date
Application number
TW99129220A
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Chinese (zh)
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TWI430385B (en
Inventor
Ben-Son Chao
Yu-Feng Chang
Yen-Si Chen
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Hermes Epitek Corp
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Publication date
Priority to US12/567,676 priority Critical patent/US8216640B2/en
Application filed by Hermes Epitek Corp filed Critical Hermes Epitek Corp
Publication of TW201112347A publication Critical patent/TW201112347A/en
Application granted granted Critical
Publication of TWI430385B publication Critical patent/TWI430385B/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32Carbides
    • C23C16/325Silicon carbide
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

Abstract

A making method of a showerhead for a semiconductor processing apparatus is disclosed in this invention. In one embodiment, the making method includes providing a substrate; forming a plurality of first holes on the substrate; forming a protect film on the substrate, wherein the protect film covers the hole walls of the first holes; and forming a plurality of second holes on the substrate, wherein a part of the protect film within the first holes is removed. In another embodiment, the making method includes providing a substrate; forming a plurality of islands on the substrate; forming a protect film on the substrate, wherein the protect film does not cover the top of the islands; and forming a plurality of holes on the islands.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gas jet head for a semi-conducting process device, and more particularly to a semiconductor manufacturing process. It can reduce the pollution of the gas mouth. [Prior Art] In a semiconductor device such as an etching process or a chemical vapor deposition process, a process gas is supplied to a process through a gas nozzle. Then, a radio frequency wave (Radj〇.,..F.reqUenCy wave) is applied to the gas jet head to generate a plasma of the process gas. The plasma is used to remove or deposit material on the wafer & exposure to the electric paddle. The surface of the process chamber will generate a large amount of ions to collide with the above-mentioned ion impact, combined with plasma chemicals and/or engraved by-products. The interaction of erosion, decay and septic generated on the surface of the process chamber exposed to the plasma causes the surface material to be removed by physical and chemical attack. The problems caused by the above attacks include the use of parts = low, the increase of operating costs, and the disadvantages of the dust or contaminants produced [0004], "1", (7) (7), and it is necessary to propose a nozzle. The gas head has the ability to withstand physical and chemical attack to increase the life of the gas jet m. When the service life of equipment parts increases and the downtime of equipment is reduced (4) 1 helps to reduce the semiconductor manufacturing [Invention] 099129220 Form No. A0101 Page 4 / Total 22 Page 0992051273 201112347 [The purpose of the present invention is to propose the manufacture of thief body gamma method. The gas nozzle has a material that can withstand physical and chemical attack to increase the life of the gas nozzle. Another object of the present invention is to propose a method of manufacturing a clock phase. The gas jet has a material that can withstand physical and chemical attack to reduce contamination of the semiconductor material produced in the plasma process. Just to solve the above problem (4), the present invention proposes a method of making a gas nozzle for a semiconductor process device. In the implementation of the method, (4) manufacturing method 〇 ° provides a * plate 'to form a plurality of - holes in the substrate; forming a protective film on the substrate 'where the protective film covers the first hole of the hole wall ' and the formation of a plurality A second hole is in the substrate, and a portion of the protective film located in the first hole is removed. [_In another-implementation, the material-making branch comprises providing a wire; forming a plurality of islands on the substrate; forming a protective film on the substrate, wherein the protective film does not cover the top of the islands; And forming a plurality of holes, such as 彡 彡 彡 。 在 在 在 在 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施Or other equipment used in plasma-related processes. [0009] 099129220 Borrowing, the method of manufacturing the gas head and the gas nozzle, the cost of the gas nozzle can be effectively reduced, and the service life of the gas nozzle Significantly increase the amount of semi-conducting contamination generated in the process can also be eliminated. Since the gas service life can be greatly increased, the downtime of the equipment can be reduced at the same time, which helps to reduce the cost of the semiconductor process. Form No. 1010101 Page 5 / A total of 22 pages 0992051279-0 201112347 [Embodiment] [0010] Some embodiments of the present invention will be described in detail below. However, the present invention can be widely applied to other embodiments except as described below, and The scope of the invention is not limited by the scope of the invention, which is intended to provide a clear description and a better understanding of the invention, the various parts of the drawings are not drawn according to their relative dimensions, some The dimensions have been exaggerated compared to other related scales; the irrelevant details have not been fully drawn for the sake of simplicity. [0011] The present invention provides a gas jet for semiconductor process equipment, where (), The semiconductor processing apparatus may be a plasma etching apparatus or a chemical vapor deposition apparatus. The first figure shows a schematic diagram of a plasma etching apparatus related to the present invention. The plasma etching apparatus 100 has a process chamber 110. In the process chamber 110, a gas nozzle 120 is disposed toward the wafer 10, and plasma is generated in the process chamber 110 to etch the film on the surface of the wafer 10. [0012] wherein the gas nozzle 120 is disposed on the upper focus ring (upper- Focus-ring 130. Wafer 10 is located below lower-focus-ring 140 below gas nozzle 120. Lower-focus-ring 140 is placed on lower cover ring (lo A wer-cover-ring 160. The gas showerhead 120 is coupled to a radio frequency generator 150 having a coupling circuit. The radio frequency generator 150 can apply a radio frequency wave to the gas showerhead 120 to generate plasma and etch the crystal. The film on the surface of the circle 10. First, the process gas is supplied to the process chamber 110 through a plurality of holes 125 of the gas nozzle 120. Then, RF waves are applied to the gas nozzle 120 099129220 Form No. A0101 Page 6 / Total 22 pages 0992051279-0 201112347, in order to produce plasma of process gas. As shown in the second figure, the gas jet head 120 includes a substrate 121 and a protective film 122. The plurality of holes 125 are exposed to the surface of the plasma in the process chamber 110 through the substrate 121 and the protective film 122 » the protective film 122 covering the substrate 121. [0013] Although the semi-conductive process device described above is the plasma etching device 100, it is not limited thereto. The above semiconductor process equipment may also be a chemical vapor deposition apparatus or other equipment applied to a plasma related process. [0014] FIG. 3 is a flow chart showing a method of manufacturing a gas showerhead 300 according to an embodiment of the present invention. The manufacturing method 300 includes the following steps. First, step 310 is performed to provide a plate; the potato is subjected to step 32, and a plurality of first holes are formed in the substrate; then, in the line: bald, 3: a protective Λ J:; a substrate, wherein the protective film covers the hole walls of the first holes; finally, in step 340, a plurality of second holes are formed in the substrate, wherein a portion of the protective film located in the first holes is moved Except Ο 1 s 1 -· ; ϊ - i;! in -- .4 :-S *! . · ή ; ·: i: i I # Λ JV . -. · -®. £= [0015] Ο Figures 4 through 4D show the manufacturing steps of the gas jet head 20. First, as shown in FIG. 4A, in a substrate 121 embodiment, the substrate 121 is a graphite substrate. Next, as shown in FIG. 4B, a plurality of first holes 126 are formed in the substrate 121 » the first holes 126 to be formed by mechanical drilling without cutting fluid. Then, as shown in the fourth c-graph, a protective film 122 is formed on the substrate 121, wherein the protective film 122 covers the walls of the holes of the first holes 126. In this embodiment, the protective film 122 is a siiicon carbide film, and the carbonized ruthenium film is formed by chemical vapor depos- ing to form a tantalum carbide film having a thickness of 3 mn or more. 099129220 Form No. A0101 Page 7 of 22 0992051279-0 201112347 The membrane consists of a resistive material with a resistance greater than 1000 (ohm/cm). In the example, the tantalum carbide film has a resistance of about 1,000,000 (ohm/cm). Finally, as shown in the fourth step d, step 340' is performed to form a plurality of second holes ι25 on the substrate 121, wherein a portion of the protective film 122 located in the first holes 126 is removed. In this embodiment, the second holes 125 are formed in mechanical drill holes requiring cutting fluid. [0017] The graphite substrate has a lower mechanical strength. Therefore, the graphite substrate can be easily processed. For example, holes in the substrate 121 can be formed by mechanical drilling without cutting fluid. The tantalum carbide film formed by chemical vapor deposition has a tempering property to make the carbonized stone film difficult to process. For example, the hardness of the carbonized powder is high, so that the carbonized ruthenium film is not easily added, and the pores of the ruthenium film cannot be prevented. It is formed by mechanical drilling without cutting fluid. Further, the graphite substrate is made of a porous material, and if the holes in the graphite substrate are formed by mechanical drilling requiring a cutting fluid, the cutting fluid may remain in the graphite substrate. In the present embodiment, as shown in the fourth D diagram, the hole walls of the first holes 126 such as 12 m are protected. Therefore, the cutting fluid used in the mechanical drilling process does not remain in the graphite substrate. In this embodiment, the protective film 122 is a silicon carbide film formed by chemical vapor deposition. The thickness of the carbonized chip is greater than or equal to 3 mm. The ruthenium carbide film has a resistance of approximately 1,000,000 (ohm/cm). Since the protective film 122 has a large electrical resistance, the substrate 121 should be a conductive substrate such as a graphite substrate. The graphite substrate is connected to the ground end of the plasma etching device 100. In the present embodiment, the substrate 121 is made of graphite material 099129220 Form No. A0101 Page 8 of 22 0992051279-0 201112347, but is not limited thereto. The substrate may also be made of other substrate materials. For example, the substrate material may also include quartz (qUartz) 4 sapphire. [0018] The chemical vapor deposition is formed to have a south thermal conductivity. Many properties such as chemical stability, thermal stability, high hardness and scratch resistance, therefore, the tantalum carbide film can withstand the plasma in the process chamber 110, thereby making the gas nozzle 12 Ο [0019] Increase and reduce contamination of semiconductor materials generated in the plasma process. The graphite substrate has substantially the same thermal expansion coefficient as that of the tantalum carbide. Therefore, the oxygen nozzle 120 can withstand the thermal shock in the electric power process. β in the plasma process, the gas nozzle 120 repeatedly performs the temperature and the temperature drop. The difference in thermal expansion coefficient from the protective film 122 is too large, and the protective film 122 may be peeled off from the substrate 121. [0020] Although, in the present embodiment, the protective film 1:22: is made of tantalum carbide material, it is not limited thereto. The substrate can also be made of other materials that can withstand the plasma process environment; for example, the material of the protective film *122 can be a high-resistance oxide material, and the high-resistance oxide material can contain an oxidation period (Υ2) 〇3), zinc oxide (Zn〇2), lead oxide (Zr〇2), cerium oxide (Hf〇2), oxidized bismuth (Ti〇2) or oxidized (Bi2〇3). [0021] In addition, other materials that can withstand the plasma process environment, for example, metal-doped oxide material, two phase oxide material, rare earth oxide material 099129220 Form No. A0101 No. 9 A total of 22 pages 0992051279-0 201112347 (rare-earth oxide material) and a thin film chemical vapor deposition material (thin-film CVD material) can also be used as the material of the protective film 122. The above semiconductor processing equipment is not limited to a plasma etching apparatus, and the above semiconductor processing apparatus may be a chemical vapor deposition apparatus or other equipment applied to a plasma related process. [0022] The material of the protective crucible 122 may include a metal doped oxidized material comprising cerium oxide (Υζ〇3), cerium or zinc oxide, aluminum (ZnO-Al); the material of the protective film 122 may comprise two phases. An oxidizing material, the two-phase oxidizing material comprises alumina (A1203), zirconia (Zr〇) yttria (Y2〇3); and the material of the protective film 122 may comprise a rare earth bismuth material. The rare earth oxidizing material comprises an oxidation vessel ( Gd 〇), yttrium oxide 2 3 (Nd^3) or yttrium oxide (γ ΐ > 2 〇 3) The material of the protective film 122 may comprise a thin film chemical vapor deposition material comprising aluminum nitride ( Α1Ν), boron nitride (ΒΝ) or tantalum carbide (SiC). [0023] FIG. 5 is a flow chart showing a manufacturing method 5 of the gas jet head f according to another embodiment of the present invention. The manufacturing method 500 includes the following steps. First, step 510' is performed to provide a substrate; next to step 520, a plurality of islands are formed on the substrate; then, step 530 is performed to form a protective film on the substrate, wherein the protective film does not cover the substrate. Waiting for the top of the island; finally 'going to step 540, forming a plurality of holes in the islands. [Face] The sixth to sixth figures show the manufacturing steps of the gas jet. First, a substrate 121 is provided as shown in Fig. 6A. Next, as shown in Fig. 6B, a plurality of islands 127 are formed on the substrate 121, and the islands 127 are formed by removing a portion 128 of the substrate 121. Then, as shown in FIG. 6C, a protective film 122 is formed on the substrate 121, wherein the protective film is 099129220. Form No. A0101 Page 10 / Total 22 Page 0992051279-0 201112347 [0025] 0 [0026] [0027] Ο [0028] 122 does not cover the top of the islands 12 7 . Finally, as shown in FIG. 6D, step 540 is performed to form a plurality of holes 125 in the islands 127. In the present embodiment, the substrate 121 is a graphite substrate, and the protective film 122 is formed by chemical vapor deposition. Decor film. As shown in the sixth C diagram, the protective film 122 does not cover the top of the islands 127. Therefore, the hole 125 on the island 127 can be formed by mechanical drilling without cutting fluid, and the cutting fluid for the mechanical drilling process does not remain in the graphite substrate. With the gas nozzle and the gas nozzle manufacturing method of the present invention, the manufacturing cost of the gas nozzle can be effectively reduced, the service life of the gas nozzle can be greatly increased, and the contamination of the semiconductor material generated in the plasma process can be reduced. Since the life of the gas jet can be greatly increased, the downtime of the device can be reduced at the same time, which helps to reduce the cost of the semiconductor process. The embodiments of the present invention are merely illustrative of the technical spirit and characteristics of the present invention, and the objects of the present invention can be understood by those skilled in the art, and the scope of the present invention cannot be limited thereto. All other equivalents and modifications of the inventions which are made without departing from the spirit of the invention are intended to be included within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The first figure shows a schematic view of a plasma etching apparatus related to the present invention. The second figure shows a schematic cross-sectional view of the gas jet head in the first figure. Fig. 3 is a flow chart showing a method of manufacturing a gas jet head according to an embodiment of the present invention. 099129220 The fourth to fourth figures D show the manufacturing steps of the gas jet head. Form No. A0101 Page 11 of 22 0992051279-0 201112347 Fig. 5 is a flow chart showing a method of manufacturing a gas jet head according to another embodiment of the present invention. The sixth to sixth figures D show the manufacturing steps of the gas jet head. [Main component symbol description] [0029] 10 Wafer 100 Plasma etching device 110 Process chamber 120 Gas nozzle 121 Substrate 122 Protective film 125 Hole, second hole 126 First hole 127 Island

128 partial area 130 upper focus ring 140 lower focus ring 150 RF generator 160 lower cover ring 300 gas nozzle manufacturing method 310 provides a substrate 320 to form a plurality of first holes in the substrate 330 to form a protective film on the substrate, The protective film covers the first hole of the hole wall 340 to form a plurality of second holes in the substrate, wherein a portion of the protective film located in the first holes is removed. 099129220 500 gas nozzle manufacturing Method Form No. A0101 Page 12 of 22 0992051279-0 201112347 510 A substrate 520 is provided to form a plurality of islands on the substrate 530 to form a protective film on the substrate, wherein the protective film does not cover the islands The top 540 forms a plurality of holes in the islands

099129220 Form number A0101 Page 13 of 22 0992051279-0

Claims (1)

  1. 201112347 VII. Patent application scope: 1. A method for manufacturing a gas nozzle for a semiconductor process equipment, comprising: providing a substrate; forming a plurality of first holes in the substrate, the first holes having a first diameter; forming a protective film on the substrate, wherein the protective film covers the hole walls of the first holes;
    Forming a plurality of second holes in the substrate, the second holes having a second straight shape, wherein the brother is always controlled to be larger than the first diameter of the protective film in the first holes Was removed. [2] The method for manufacturing a gas nozzle for a semi-conductive device according to the first aspect of the invention, wherein the substrate is a graphite substrate (3), as claimed in the patent application. Said gas for semiconductor process equipment
    A method for manufacturing a showerhead, wherein the protective film is a silicon carbide film formed by chemical vapor deposition, and the resistance of the carbonized carbide film is about 1,000,000 (ohm) / cm). 4. The method of manufacturing a gas jet head for a semiconductor process apparatus according to claim 1, wherein the protective film is a silicon carbide film, and the cracked ruthenium film is chemically vaporized. Formed by chemical vapor deposition, the thickness of the carbonized stone film is greater than or equal to 3 mm. 5. The method of manufacturing a gas jet head for a semiconductor process apparatus according to claim 1, wherein the substrate comprises graphite (graphite) 099129220 Form No. A0101 Page 14 / Total 22 Page 0992051279-0 201112347 Quartz ( Quartz) and at least one material of the group of sapphire. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; And at least one material consisting of zinc oxide (zn〇2), oxidized (Zr02), cerium oxide (Hf〇2), titanium dioxide (Ti〇2)2, and cerium oxide (Bi2〇3). [1] A method of manufacturing a gas jet head of a semiconductor processing apparatus according to the first aspect of the invention, wherein the protective film comprises a metal doped oxidizing material comprising cerium oxide (w), cerium (Eu) and at least one material of the group consisting of zinc oxide-ing (ZnO-Ai). For example, the method for manufacturing a gas nozzle for a semi-conducting process apparatus according to Item 1 of the above-mentioned application, wherein the protective film comprises a two-phase oxidizing material, and the two-phase oxidizing material comprises oxidized inscription (ai2〇) 3) at least one material of the group consisting of oxidative error (Zr〇2) and oxidized (Y2〇3). ο / ίο If you apply for the special method (4), the method of manufacturing the gas nozzle of the equipment of the age of semi-conducting equipment is the fourth. The bowl contains the "rare earth oxide material, which contains oxidation disorder (G'd2 ( 3), at least one material of the group consisting of oxidized (10) 2 〇 3) and yttrium oxide (Yt > 2 〇 3). For the manufacture of gas nozzles for semiconductor process equipment according to the first item (4) The method, wherein the protective film comprises a chemical vapor deposition material, and the thin hybrid vapor deposition material comprises at least a group consisting of IS (AIN), boron nitride (BN), and tantalum carbide (SiC). A material for a semiconductor (4) gas spray (four) manufacturing method, comprising: providing a substrate; 099129220 forming a plurality of islands on the substrate; Form No. A0101 Page 15 of 22 0992051279-0 201112347 12 13 . 14 . 15 . Forming - on the substrate 'its +, the secret film does not cover the top of the islands; and forming a plurality of holes in the islands. The system for producing gas nozzles for semiconductor process equipment The method, wherein the substrate is a graphite substrate, such as the method for manufacturing a gas nozzle for a semiconductor process device, wherein the protective film is a silicon carbide film. Film), the tantalum carbide film is formed by chemical vapor deposition, and the resistance of the tantalum carbide film is about 1000000 (ohm/cm)» : for semi-equal as described in claim 11: The method for manufacturing a gas nozzle of an apparatus process device, wherein the protective film is a carbon carbide film formed by chemical vapor deposition, and the carbonized stone film is formed by chemical vapor deposition. The method of manufacturing a gas nozzle for a semiconductor process apparatus according to the invention of claim 11, wherein the substrate comprises graphite, quartz, and sapphire Forming at least one material of the group.
    The method of manufacturing a gas jet head for a semiconductor process apparatus according to claim 11, wherein the protective film comprises a high-resistance oxidizing material comprising yttrium oxide (Y 〇), oxidized At least one material consisting of zinc (Zn〇) L 6 2J , oxidized (Zr〇2), dioxin (Hf〇2), titanium dioxide (Ti〇2), and cerium oxide (Bi2〇3). 17 . For the semiconductor process equipment described in claim 11 of the patent scope 099129220 Form No. A0101 Page 16 / Total 22 Page 0992051279-0 201112347 18 19 Ο 20 The manufacturing method of the nozzle, its order, The metal granules_package_, including-metal doped oxidized material and zinc oxide, Zn0-A, (W, (Eu) • at least one material as in the group u of the patent application scope. a gas for use in a semiconductor process apparatus, the two-phase oxidizing material comprising ~' the protective film comprising a two-phase oxidizing material, and an oxidation correction: Γ2〇3), oxidation, and a group consisting of 2 At least the group - material. The gas of the semiconductor processing apparatus described above, wherein the protective film comprises a rare earth oxidizing material comprising a group of oxygen (Ay, oxygen (and Yb2〇3)) At least one material. The method for manufacturing a gas nozzle according to the semi-finished process apparatus described in the above-mentioned Item 11, wherein the protective film comprises a thin film chemical vapor deposition material, and the chemical vapor deposition material is over-sewn At least one material of a group consisting of Ig (AlN), boronized boron (BN), and sic. .. sound·*. i Ϊ -S, ψ t. I 1 I彳❹ 099129220 Form number Α0101 0992051279-
TW99129220A 2009-09-25 2010-08-31 Making method of showerhead for semiconductor processing apparatus TWI430385B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104715993A (en) * 2013-12-13 2015-06-17 中微半导体设备(上海)有限公司 Plasma processing cavity, gas spraying head and manufacturing method thereof

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8673080B2 (en) 2007-10-16 2014-03-18 Novellus Systems, Inc. Temperature controlled showerhead
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
WO2012122054A2 (en) 2011-03-04 2012-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
CN103493185A (en) 2011-04-08 2014-01-01 应用材料公司 Apparatus and method for UV treatment, chemical treatment, and deposition
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
JP5906318B2 (en) * 2012-08-17 2016-04-20 株式会社Ihi Manufacturing method and manufacturing apparatus for heat-resistant composite material
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
WO2014147262A1 (en) 2013-03-22 2014-09-25 Schott Ag Blank made of silicon, method for the production thereof and use thereof
EP3095305B1 (en) * 2014-01-15 2018-08-29 Gallium Enterprises Pty Ltd Apparatus and method for the reduction of impurities in films
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10316408B2 (en) * 2014-12-12 2019-06-11 Silcotek Corp. Delivery device, manufacturing system and process of manufacturing
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US10378107B2 (en) 2015-05-22 2019-08-13 Lam Research Corporation Low volume showerhead with faceplate holes for improved flow uniformity
US10023959B2 (en) 2015-05-26 2018-07-17 Lam Research Corporation Anti-transient showerhead
US20160362782A1 (en) * 2015-06-15 2016-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Gas dispenser and deposition apparatus using the same
WO2017011470A1 (en) * 2015-07-13 2017-01-19 Tokyo Electron Limited Method for coating or filling a porous material
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10115586B2 (en) 2016-05-08 2018-10-30 Tokyo Electron Limited Method for depositing a planarization layer using polymerization chemical vapor deposition
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
TW201941300A (en) 2018-02-28 2019-10-16 美商應用材料股份有限公司 Systems and methods to form airgaps
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0595054A1 (en) * 1992-10-30 1994-05-04 Applied Materials, Inc. Method for processing semiconductor wafers at temperatures exceeding 400 degrees C.
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
US6050506A (en) * 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6086677A (en) * 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6237528B1 (en) * 2000-01-24 2001-05-29 M.E.C. Technology, Inc. Showerhead electrode assembly for plasma processing
US6786175B2 (en) * 2001-08-08 2004-09-07 Lam Research Corporation Showerhead electrode design for semiconductor processing reactor
US6793733B2 (en) * 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
JP4218360B2 (en) * 2002-04-24 2009-02-04 東京エレクトロン株式会社 Heat treatment apparatus and heat treatment method
JP4151308B2 (en) * 2002-05-17 2008-09-17 東京エレクトロン株式会社 Gas introduction method for processing equipment
JP4260450B2 (en) * 2002-09-20 2009-04-30 東京エレクトロン株式会社 Manufacturing method of electrostatic chuck in vacuum processing apparatus
US6983892B2 (en) * 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US7755278B2 (en) * 2004-08-25 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting element provided with organic conductive and inorganic hole transport layers between an electrode and organic emissive layer
US7605845B2 (en) * 2005-04-28 2009-10-20 Texas Instruments Incorporated Motion stabilization
KR100731164B1 (en) * 2005-05-19 2007-06-20 주식회사 피에조닉스 Apparatus of chemical vapor deposition with a shower head and method therof
DE102005035328B4 (en) * 2005-07-28 2015-04-09 Zf Friedrichshafen Ag Dual-clutch transmission with integrated electric machine and its application
US20080216958A1 (en) * 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20090095222A1 (en) * 2007-10-16 2009-04-16 Alexander Tam Multi-gas spiral channel showerhead
US20110198034A1 (en) * 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104715993A (en) * 2013-12-13 2015-06-17 中微半导体设备(上海)有限公司 Plasma processing cavity, gas spraying head and manufacturing method thereof
CN104715993B (en) * 2013-12-13 2017-02-22 中微半导体设备(上海)有限公司 Plasma processing cavity, gas spraying head and manufacturing method thereof

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