TW201110429A - Semiconductor bearing structure - Google Patents

Abstract

A semiconductor bearing structure is a bearing body with a thermally conductive region made of plastic material. The bearing body forms an interface layer on each surface and forms defined insulated line and metal layer. The insulated line is located on the surface for thermally conductive region and annular region which is extended surround by two adjacent surface of the thermally conductive region for exposing part of the surface of the bearing body. Metal layer on the interface layer forms at least two electrodes wherein the heat conductor comprises a light-emitting diode chip. The chip has at least a contact connecting to corresponding metal layer through metal leading wire so that thermal energy of chip can be exported rapidly from the chip.

Description

201110429 ' r

*I.'. Description of the Invention: Technical Field of the Invention The present invention relates to a semiconductor load-bearing structure, and more particularly to a heat-conducting region formed by forming a heat-conducting region, which can also be selectively formed on a heat-conducting body. In the above, a heat dissipation layer having a predetermined thickness is provided to provide a heat dissipation structure that is reflective and electrically conductive. [Prior Art] • In recent years, the use of copper, nickel, silver, gold, and chromium to form interconnected circuits on semiconductor substrates has become a significant trend, with copper, silver, gold, and chromium being more common. Low resistance and high electromigration resistance. The interconnections are usually made by plating, copper, gold, gold, gold, or precipitated into fine pits and surfaces formed in the surface of the substrate. However, there are few related technologies for applying the interconnection technology to the metal layer fresh on the substrate of the light-emitting diode chip. The creators of this case have improved and innovated in view of the shortcomings derived from the package structure of the light-emitting diode chip. Finally successfully developed and completed this semiconductor load-bearing structure. SUMMARY OF THE INVENTION An object of the present invention is to provide a reflector cup of a carrier body which has a side wall formed by using a metal having excellent thermal conductivity and a heat conductor connected to a bottom surface of the reflector cup, thereby having a heat conductive functional semiconductor load-bearing structure. A second object of the present invention is to provide a semiconductor load-bearing structure having a heat-dissipating area and having a heat body of 201110429. External Transmission Another object of the present invention is to provide a semiconductor load-bearing structure in which internal heat is rapidly guided to extend its service life. Still another object of the present invention is to provide a semiconductor load-bearing structure which can increase heat dissipation and has a heat dissipation structure. A further object of the present invention is to provide a semiconductor-bearing junction which can be formed by a carrier structure and which can freely design a conductive line and has electrical properties.

It is an innovative process and structure that provides an electrode for freely designing a vertical electrical circuit. The semiconductor load-bearing structure which can be used for the above-mentioned creation purposes is a carrier body made of plastic having a heat-transmissive region, the carrier body forming an interface layer on each surface and defining an insulating-line and a metal layer on the upper surface, the insulated circuit An annular region extending around the surface of the thermally conductive region and surrounded by two adjacent surfaces of the thermally conductive region while exposing a portion of the surface of the carrier to form at least two electrodes of the metal layer on the interface layer, wherein the thermal conductor further The method comprises the steps of: bonding a light-emitting diode chip, wherein the wafer has at least one contact through the metal wire to connect the corresponding metal layer 'to enable the thermal energy of the wafer to be quickly led out by the heat conductor. [First Embodiment] Referring to FIG. 1 and FIG. 1 , a semiconductor carrying structure according to a preferred embodiment of the present invention is a carrier body having a heat conducting region 17 made of plastic, and the carrier 1 is on each surface. Forming an interface layer 13 and defining an insulating line 14 and a metal layer 15 at an upper portion, the insulating line 14 is located in the heat conducting region 17 (or the guide 201110429, *

I. is the surface on which the region 7 is located) and at least one annular region extending around the two adjacent surfaces of the heat-conducting region 17, and the insulating circuit 14 simultaneously exposes a portion of the surface of the carrier to expose the interface layer 13 The metal layer 15 forms at least two electrodes (such as a positive electrode or a negative electrode); and the carrier body can also be combined with the following structure to provide different needs of the user. In another preferred embodiment of the present invention, the semiconductor carrier structure is made of a plastic carrier, and the carrier body defines an interface layer 13 on each surface and defines an insulating line 14 and a metal layer 15 thereon. The insulating line 14 is formed by an annular region surrounded by two adjacent surfaces while exposing a portion of the surface of the carrier 1 to form at least two electrodes (such as a positive electrode or a negative electrode) of the metal layer 15 on the interface layer 13.

As shown in FIG. 2, the heat transfer area P of the carrier body of the second embodiment of the present invention is formed by a three-dimensional heat conduction structure, and the heat transfer area ιγ can be extended from the periphery of the carrier 1 to form a three-dimensional heat conduction structure. As shown in FIG. 4, the heat conduction area of the third embodiment of the present invention is at least one heat conductor 2 disposed inside the carrier, wherein the carrier body has a through hole 12 and the heat conductor 2 is drummed. The bottom of the heat conductor 2 forms a bottom of the reflector cup, and the bottom of the heat conductor 2 forms a bottom structure together with the bottom of the carrier body, so that the top of the heat conductor 2 is a heat conducting surface with conduction heat. As shown in FIG. 9 , the heat conducting portion 17 of the carrier 1 of the fourth embodiment of the present invention is a reflecting cup u formed by a heat conducting body 2 extending a three-dimensional heat conducting structure, and a through hole 12 is formed at the bottom of the reflecting cup 11 . 2 is set in the perforation 12, 201110429 \ ,

I.. and the carrier! Further, a contact surface is formed between the heat conductor 2 and the bottom of the heat conductor 2 is disposed at the top of the heat conductor 2 to transfer heat generated at the top of the heat conductor 2 to the bottom of the heat conductor 2. As shown in FIG. 5, the carrier i of the fifth embodiment of the present invention extends at least one side to form at least—(four) 16 '. The carrier 1 and the (four) 16 form an interface layer 13 on each surface, and then the carrier i and the side arm 16 Forming a first-insulated line (4), a second insulated line 142 and a metal & 15, after the side-arm 16 splits the carrier i, the two sides of the contact carrier i form a dividing surface 16 such that the dividing surface 161 and the first insulated circuit 14 and the second insulating line 142 are used to form an annular region to form at least two electrodes on the metal layer on the interface layer 13. In the fifth embodiment, the heat conducting region 丨7 of the carrier body can be formed by a reflective cup u formed by the three-dimensional heat conducting structure (as shown in FIG. 6), or the heat conducting portion 17 is provided with at least one heat conducting body 2 inside the carrier body 1 ( As shown in FIG. 7), or the heat conducting portion 17 is a reflective body U formed by a heat conducting body 2 extending from a three-dimensional heat conducting structure (as shown in FIG. 8), a through hole 12 is formed at the bottom of the reflecting cup 11, and the heat conducting body is formed. 2 is disposed in the through hole 12. The carrier 1 is injection molded from a single plastic, and the carrier 1 in FIGS. 1 to 4 and 9 has no extended side arms 16, and the carrier 1 of FIGS. 5 to 8 extends at least one side to form at least one arm. 16; wherein the heat conducting region 17 of the carrier 1 can be: (1) a plane, as shown in FIG. 1 and FIG. 5; or (2) tilting a reflecting surface on the surface of the carrier 1 to form a reflecting cup u, And the angle defined by the surface of the carrier 1 and the reflecting surface is between 1 degree and 85 degrees, as shown in FIG. 3 and FIG. 6 201110429 » *, ..; or (3) a plane of the heat conducting area 17 is At least one heat conductor 2 is disposed inside the carrier 1 as shown in FIG. 4 and FIG. 7; or (4) the heat conducting region 17 of the carrier j is a reflective cup u formed by a heat conducting body 2 extending a three-dimensional heat conducting structure, such as Figure 8 to Figure 10. Hereinafter, the present invention exemplifies the formation of the carrier 1 including the heat conductor 2 as an interface layer 13, an insulating line 14, and a metal layer 15. The interface layer 13 is deposited on the surface of the carrier 1 by electroless plating, wherein after the catalyst-activated carrier 1 is transferred to the electroless plating process, Φ is formed on the surface of the carrier 1 to form a layer of chemical nickel or copper. Metal interface layer 13. When the carrier 1 comprises the heat conductor 2, an interface layer 13 is formed on the surface of the carrier 1 and the heat conductor 2, as shown in FIG. As shown in FIG. 12, the insulated circuit 14 strips a portion of the interface layer 13 by laser technology to form a desired insulating line η; wherein the laser is mainly carbon dioxide (co2) laser, yttrium chromium (Nd: YAG) Laser, ytterbium-doped yttrium vanadate crystal (Nd:YV〇4) laser, excimer laser) laser, fiber laser (_ • LaSer) and other laser beams, the wavelength is selected from 248 mn To l0600 nm. As shown in Fig. 12, the metal layer 15 is an electrical supply layer having an electroplating process or a chemically deposited conductor metal as an interface layer, and the electric clock process selectively deposits a conductor metal on the interface layer 13. The metal layer 15 formed on the interface layer 13 may comprise any suitable metal compatible with the structural material of the thermal conductor 2, preferably including electroplating or electroless copper plating, nickel, silver, gold, road, chemistry. The metal layer 15 can also improve the reflectivity of the reflective cup U, and the conductive metal is easy to obtain the 201110429 as shown in FIG. The structure, for the electric supply layer, the fine particle structure promotes a smoother surface, thereby forming a semiconductor bearing structure capable of freely designing a conductive line and a metal I 15, and having high reflection and high thermal conductivity, the present invention is The surface of the carrier 1 and the heat conductor 2 is deposited by electroless plating to form an interface layer 13, which in turn includes laser-removing the peel-part interface layer 13 and surrounding the interface layer. The insulating material u, and the metal layer 15' on both sides of the material material 14 respectively, the metal layer 15 is used in an electroplating process for interconnecting the carrier ι and the heat conductor 2 to be integrated into one body and the carrier body 1 and the heat conduction Body 2 The contact surface is filled with a metal layer 15. Referring to FIG. 15 to FIG. 17 , a carrier 1 having a three-dimensional heat-conducting structure and a heat-conducting body 2 is formed on the surface of the bonded carrier 丨 and the heat-conducting body 2 by electroless plating to form an interface layer 13 . The interface layer 13 and the top surface and the bottom surface are peeled off by laser technology to remove a portion of the interface layer 13 and extend beyond the edge of the carrier 1 into the surface area of the side arm 16 to form a desired first insulated line 141 and The second insulated circuit 142 (shown in FIG. 16), and then the side arm 16 of the carrier 1 is divided (or the carrier 1 is cut or punched). The carrier 1 is divided on two sides. The surface 161 (shown in FIG. 17), the dividing surface 161, the first insulating line 141 and the second insulating line 142 are used to form metal layers 15 respectively disposed on two sides of the insulating line 14, and the metal layer 15 is The electroplating process is used to interconnect the carrier 1 and the thermal conductor 2 to form a 201110429 t

(I i, and the carrier i and the heat conductor 2 have a contact surface which is filled with a metal layer 15. As shown in FIG. 19, the heat conductor 2 has a diameter of an upper layer and a lower diameter. Further, when the heat conductor 2 is bonded with a light emitting diode chip 3, the wafer 3 is disposed on the positive electrode metal layer 15 and at least one of the contacts is connected to the corresponding negative electrode metal layer 15 through the metal wire, and the thermal energy of the wafer 3 is enabled. A preferred embodiment of the method for fabricating the semiconductor carrier structure of the present invention is shown in FIG. 10 and FIG. 11 , which sequentially includes a plastic injection step S1 and an electroless plating step S2. The heat conductor 2 is implanted in step S3 (if the carrier 1 has no heat conductor 2, the step is omitted), the laser insulating step is performed, the plating step is applied, and the steps of J step S6 are performed to complete the load-bearing structure of the semiconductor load-bearing structure. For the production of the present invention, the preparation method is defined as a spL pr〇cess (Single - shot Plating and Laser) process: _ plastic injection step S1, providing carrier 1 of at least one planar type of heat conduction region 17, or a solid guide The carrier body 丨 or the carrier 丨 has a through hole 12, or the carrier 丨 has a three-dimensional heat conduction structure connecting the through hole 12, or at least one side extending to form at least one side arm 16; the aforementioned three-dimensional heat conduction structure, wearing The tying 12 and the side arm 16 are formed by changes in the shape of the mold. The carrier 1 is formed by injection molding of plastic or liquid crystal polymer material, wherein the plastic is mainly PA (p〇iyamide), polyterephthalic acid. General purpose engineering plastics such as butadiene dicarboxylate (PBT), PET, LCP, PC, ABS, PC/ABS, etc. Among them 201110429

I

I * , .. The carrier 1 is made of a plastic containing a pre-doped metal catalyst, or a plastic containing a pre-doped organic substance, which mainly includes palladium, copper, silver, iron, etc.; or The carrier 1 can also be made of plastic without a dopant metal catalyst or plastic without a dopant organic substance. In the electroless plating step S2, an interface layer 13 is formed on the carrier 1, and the carrier 1 is covered, and after the plastic injection step S1, a carrier 1 for the blank is produced. As shown in Fig. 20, the carrier 1 is made of plastic containing pre-doped metal catalyst or plastic containing pre-doped organic matter, and the carrier 1 is passed through electroless plating. Etching or grit blasting and activation processes produce a rough surface 18 (shown in FIG. 10A) that allows the surface of the carrier 1 to be coated with a chemical nickel or copper metal interface layer 13. As shown in Fig. 21, the carrier 1 is made of a plastic without a dopant metal catalyst or a plastic without a dopant organic material, and the carrier 1 is pretreated by electroless plating. (Pre-Dip), chemical etching or sand blasting method to roughen the surface to produce a rough surface. Alternatively, the surface of the carrier 1 is subjected to catalytic treatment and then subjected to a surface activation step to enter electroless plating. The surface of the carrier is deposited with chemical nickel or copper metal. The thermal conductor 2 is implanted in step S3: the perforation 12 for implanting the thermal conductor 2 into the carrier body is: (a) embedded injection, (1) thermal fusion implantation, (c) ultrasonication Way to implant. If the embedded heat-dissipating body is implanted, the carrier is produced by embedding in the plastic injection step S1. The _ hot-melt or ultrasonic method can be implanted after the plastic injection step S1, 201110429 1 .. or the electroless plating step S2 is completed or the entire plating step S5 is completed. The laser insulating step S4' forms an insulating line 14 at the interface of the carrier i; When the carrier i has no side arms 16, the local interface layer 13 which is exposed to the two sides of the upper surface and the lower surface is peeled off, so that the carrier 丨 is formed with an insulating line u extending around the carrier 1 as shown in FIG. . When the carrier i extends at least-side to form at least the side arm 16, a first insulating line 141 and a second insulating line 丨 42 are formed on the interface I 13 , and the first insulating line and the first insulating line 142 are The laser peeling carrier] the interface layer η on the surface and extends beyond the carrier! The edge is in the surface area of the side arm i 6 and can then be applied to the interface layer 13 forming the insulated line 14 as shown in Figure 16. The key step S5' forms a metal layer 15 on the interface layer 13 or the interface layer_thermal conductor 2 of the carrier, and the semiconductor carrier structure is completed by electroplating and chemical deposition of copper, nickel, silver, gold, chromium. Electroplating bath process formed by any one of the group consisting of chemical substitution gold, etc. deposited metal layer = 5' * The formed portion will be used as the light-emitting wafer 3 for bonding and wire bonding, βΓ7 reflectivity, or Conducting an electrical or hot object, thus completing the semiconductor load-bearing structure. The dividing step S6' is as shown in FIG. 17. If the carrier 1 has the side arm 16 dividing the side arm 16, the adhesive surface 161 between the side arm 16 and the carrier 1, the insulating line 141 and the second insulating line 142 will be The carrier i is divided into a pole and a cathode to form a load-bearing structure. 201110429 t

The semiconductor load-bearing structure provided by the present invention has the following advantages when compared with the foregoing cited documents and other conventional techniques: The illuminator diode lead frame manufactured by the present invention is not limited in number. The shape of the reflecting surface of the carrier can be freely designed, and the plurality of illuminants can be used side by side. The present invention utilizes high utilization of electroplating or chemical deposition to deposit a metal layer, has cost reduction and can provide excellent electronic performance, and high. The advantages of reflection and high thermal conductivity area characteristics. The semiconductor carrier structure of the present invention has excellent heat conduction and reflection effects, and the heat conducting portion can conduct heat energy of the wafer through the heat conductor or heat out through the reflector, and the reflective portion can enhance the brightness thereof through the reflector. The invention is an integrally formed seamless semiconductor load-bearing structure, and the package structure formed by the metallization process, the laser process and the electroplating process for implanting or embedding the heat conductor for the carrier body does not cover the film after the completion of the cover wafer. There are advantages such as leakage of rubber. Another advantage of this seamlessness is to avoid the failure of the semiconductor component # due to the effect of thermal expansion or shrinkage due to the gap, thereby improving the life cycle. In summary, this case not only enhances the above-mentioned multiple functions in the space type, but should have fully complied with the new statutory invention patent requirements '爰 apply in accordance with the law, request the invention patent application' to encourage creation, to the sense Will. [Simple description of the schema] Innovative, and more customary and progressive, the approval of this article. Figure - is a three-dimensional schematic diagram of the conductor carrying structure 12 201110429 • ., _ . ffl II is a partial cross-sectional view of the side of the figure. Figure 3 is a perspective view showing the heat conduction area of the carrier body of the present invention by at least one heat conduction of a reflective cup. Figure 4 is a perspective view showing the heat conduction area of the present invention as a carrier body in the internal body. Figure 5 is a perspective view showing the carrier body of the present invention forming at least one side arm.

Fig. 6 is a perspective view showing the heat transfer area of the carrier including the side arms formed by a reflector cup. Figure 7 is a perspective view of the interior of the carrier including the side arms - a heat conductor. Figure 8 is a perspective view of the carrier having the side arms, the heat transfer area of which is - the heat spreader extends a reflector. Figure 9 is a perspective view of the carrier. Fig. 10 and A show the purpose of the surface (four) or sand blasting of the carrier to roughen the surface. Figure 11 is a schematic illustration of the deposition of the interface layer on the surface of the carrier by electroless plating. Figure 12 is a schematic illustration of the carrier stripping a portion of the interface layer by laser technology to form an insulating line. Figure 12 is a schematic view showing the interface layer with a plating process or a chemically deposited conductor metal as a metal layer. Figure 14 is a schematic view of a semiconductor carrying structure of the present invention. 13 201110429

'I, Fig. 15 is a perspective view of a carrier having a three-dimensional heat conducting structure and a heat conductor. Figure 16 is a schematic view showing the formation of a desired first-insulated line and a second insulated line for a carrier having a three-dimensional heat-conducting structure and a heat-conducting body. Figure 17 is a schematic view showing a carrier having a three-dimensional heat-conducting structure, a boat, and a heat conductor, forming a dividing surface on both sides.曰18 is a partial three-dimensional schematic view of the heat-transfer body of the semiconductor load-bearing structure with a light-emitting diode. Figure 19 is a perspective view of the heat conductor. Figure 20 is a block diagram showing the first preparation flow of the electronic component of the present invention. Figures 11 to 11 are block diagrams showing the second preparation flow of the electronic component of the present invention. [Main component symbol description] 1 carrier # 11 reflector cup 12 perforated 13 interface layer 14 insulated circuit 141 first insulated circuit 142 second insulated circuit 15 metal layer 201110429

I 16 side arm 161 17 18 2 split surface heat transfer area thick super-surface heat conductor 3 wafer 31 metal wire

Claims (1)

201110429 /. VII. Patent application scope: 1. A semiconductor load-bearing structure, which is a carrier body made of plastic and having a heat-conducting area. The carrier body forms an interface layer on each surface and defines an insulated circuit and metal at the top. a layer, the insulating circuit is located on a surface of the heat conducting region and an annular region extending around two adjacent surfaces of the heat conducting region while partially exposing a portion of the surface of the carrier to form at least two electrodes of the metal layer on the interface layer. 2. The semiconductor load-bearing structure of claim 1, wherein the heat transfer region is a reflective cup formed by a three-dimensional heat conductive structure. The semiconductor load-bearing structure of claim 1, wherein the heat-conducting region is such that at least one heat-conducting body is disposed inside the carrier, such that the top of the heat-conducting body is a heat-conducting surface having conduction heat. 4. The semiconductor load-bearing structure of claim 1, wherein the heat-conducting region of the carrier is a reflective cup formed by a heat-conducting body extending from a three-dimensional heat-conducting structure, and a hole is formed in the bottom of the reflector cup. Provided in the perforation, the top of the heat conductor forms a reflector bottom. 5. The semiconductor load-bearing structure of claim 4, wherein the carrier and the surface of the thermal conductor form an interface layer, the interface layer further comprising removing a portion of the interface layer to form an insulated circuit, and Metal layers respectively disposed on both sides of the insulated circuit, the metal layers are used for interconnecting the carrier and the heat conductor. 6. The semiconductor load-bearing structure of claim 5, wherein the 16 201110429 f . . . carrier comprises a contact surface between the heat conductor and the contact surface is filled with a metal layer. 7. A semiconductor load-bearing structure, which is made up of a plastic carrier. The carrier body forms an interface layer on each surface and defines an insulated circuit and a metal layer on the upper surface. The insulated circuit is formed by two adjacent surfaces. An extended annular region is surrounded while simultaneously exposing a portion of the surface of the carrier to form at least two electrodes of the metal layer on the interface layer. 8. The semiconductor load-bearing structure of claim 1, wherein the carrier extends at least one side to form at least one arm, and the carrier and the side arm form an interface layer on each surface, and then the carrier Forming a first insulated line, a second insulated line and a metal layer on the side arm. After the side arm divides the carrier, the two sides of the contact carrier form a dividing surface, so that the dividing surface and the first insulated line The second insulating line is used to form an annular region 'to form at least two electrodes of the metal layer on the interface layer. 9. The semiconductor load-bearing structure according to claim 8, wherein the carrier and the side arm are formed in the metal layer, and then the side arm is divided by a dividing process. 10. The semiconductor load-bearing structure of claim 8, wherein the insulated circuit is mainly a layer of the interface layer of the surface of the carrier and extending beyond the edge of the carrier to form a surface. An insulated circuit and a second insulated circuit. 11. The semiconductor load-bearing structure according to claim 8, wherein the 17 201110429 carrier is an adhesion between the side arm and the carrier after the side arm is divided, the edge line 5 and the second insulation The line divides the carrier to form at least two electrodes. 12. 13. 14. • 15· The semiconductor load-bearing structure as described in claim i or 7 of the patent application. The carrier is made of a plastic or liquid crystal polymer poly-α containing a pre-doped metal catalyst, or a plastic or liquid crystal polymer material containing a pre-doped organic substance, and the metal catalyst or organic substance mainly includes palladium and copper. , silver, iron. The semiconductor load-bearing structure according to claim 1 or 7, wherein the carrier is a plastic or liquid crystal polymer without a dopant metal catalyst, or a plastic or liquid crystal polymer without a dopant organic substance. be made of. The semiconductor load-bearing structure of claim 1, wherein the heat-conducting body further comprises a light-emitting diode chip, the wafer having at least one contact connected to the corresponding metal layer through the metal wire. The semiconductor load-bearing structure according to claim 1 or 7, wherein the interface layer is directly deposited on the surface of the carrier by electroless plating, and the insulating circuit is formed by laser stripping a part of the interface layer to form a desired insulation. The circuit 'the metal layer is deposited on the interface layer by electroplating or chemical deposition of the conductor metal. The semiconductor carrier structure according to claim 1 or 7, wherein the top surface layer of the upper surface, the side surface and the lower surface of the carrier is further stripped by laser to form an insulating line, and the insulating line can be used for the carrier region 18 16. 201110429 • . / / Form at least two electrodes. 19