TWM368893U - Plastic lead frame structure with reflective and conductor metal layer - Google Patents

Plastic lead frame structure with reflective and conductor metal layer Download PDF

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Publication number
TWM368893U
TWM368893U TW98206318U TW98206318U TWM368893U TW M368893 U TWM368893 U TW M368893U TW 98206318 U TW98206318 U TW 98206318U TW 98206318 U TW98206318 U TW 98206318U TW M368893 U TWM368893 U TW M368893U
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Taiwan
Prior art keywords
plastic
lead frame
metal layer
reflective
frame structure
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TW98206318U
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Chinese (zh)
Inventor
Cheng-Feng Chiang
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Kuang Fa Plating Co Ltd
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Priority to TW98206318U priority Critical patent/TWM368893U/en
Publication of TWM368893U publication Critical patent/TWM368893U/en

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M368893 五、新型說明: 【新型所屬之技術領域】 本創作係關於一種發光二極體之導線架製備技術,具體 而δ係指一種具反射及導體金屬層之塑料導線架結構,藉以 簡化製程、且能降低成本,進一步並可增進其反射效率與增 加導線面積,以構成一高導熱效果的導線架結構。 【先前技術】 按,現有之發光二極體導線架,普遍習用以導電材質之 料片為主(如:銅、銅合金或鋁等),經過沖壓形成導線架之 胜料,隨後以電錢處理,在導線架胚料表面電鑛—層具有高 導電性的金屬層(如錫、銀、金等)’隨後利用嵌人式射出成 型技術(Insert M〇lding) ’形成杯狀的發光二極體導線架, 但該杯狀導線架之反射區域無法有效提供金屬層的反射效 果。 此外,也有以雷射直接活化(Laser Structuring ’LDS)製程應用於發光二極體的導線架上,此 製程缺點為需使用雷射直接活化製程專用材料,此材料射出 後’其電極與反射區域使用雷射進行表面活化,因雷射會使 表面粗糙化’且雷射的面積過大’在斜面上因其雷射有角度 與製程時間等限制,以及雷射活化後的粗糙度會導致其原先 設計的反射角度與反射亮度有所差異,另,3〇立體雷射加工 設備昂貴’加工時間太長,成本費用過高。 M368893 再者’現有者另外還有以低溫共燒多層陶瓷 (Low-Temperature Co-fired Ceramics’LTCC),因為陶曼與 矽的材質類似,可與晶片連接,其導熱及耐熱係數均很好, 但低溫共燒多層陶瓷其需在900度左右的溫度進行燒結,其 具有收縮性不同的現象,易增加電性變動因素,且陶瓷製程 成本昂貴,大量生產成本下降不易。 另外雖有業者考慮以雙料射出技術來製作導線架,但在 鲁 現有的雙料射出技術中,分別有PCK法與SKW法兩種方式, 其中PCK法的製程方式為在第一次射出成型時,使用可電鍍 且經由觸媒化修正過的塑料,在第二次射出成型時,使用不 可電鍍的塑料製作,元件的表面隨後蝕刻活化與金屬化。至 於SKW法的製程方式為在第一次射出成型時使用可電鍍的塑 料,隨後蝕刻第一次射出成型之塑料表面,並且以鈀(pd)將 表面活化,將元件置於模具内,且執行第二次射出成型,之 • 後將元件的表面金屬化。此兩種方法在於極細微的線路加工 、上因為雙料射出工藝而有所限制,並無法有效形成極細微的 線路。 換言之,現有的發光二極體導線架或因製程複雜,而無 法降低其製作成本,又或因雷射活化後使表面粗糙,而導致 無法達到原先設計的反射角度與反射亮度,進而影響到其反 射效率,且無法適用於微米化的絕緣線路圖樣中,因此如何 提供一種兼具易於製作、低成本及高反射率等特性的導線M368893 V. New description: [New technical field] This creation is about a lead frame preparation technology for a light-emitting diode. Specifically, δ refers to a plastic lead frame structure with a reflective and conductive metal layer, thereby simplifying the process, Moreover, the cost can be reduced, and the reflection efficiency and the wire area can be further improved to form a lead frame structure with high heat conduction effect. [Prior Art] According to the existing light-emitting diode lead frame, it is generally used for conductive materials (such as copper, copper alloy or aluminum), and the lead frame is formed by stamping, followed by electricity. Treatment, on the surface of the lead frame billet material, the electrode layer has a highly conductive metal layer (such as tin, silver, gold, etc.) and then uses the insert molding technique (Insert M〇lding) to form a cup-shaped light-emitting The polar body lead frame, but the reflective area of the cup-shaped lead frame cannot effectively provide the reflection effect of the metal layer. In addition, there is also a Laser Structuring 'LDS process applied to the lead frame of the light-emitting diode. The disadvantage of this process is that the laser is used to directly activate the process-specific material. After the material is ejected, its electrode and reflective area Surface activation using lasers, which will roughen the surface due to laser 'and the area of the laser is too large'. The slope is limited by the angle of the laser and the processing time, and the roughness after laser activation will cause the original The reflection angle of the design is different from the reflection brightness. In addition, the 3D stereo laser processing equipment is expensive. The processing time is too long and the cost is too high. M368893 In addition, 'the existing ones also have Low-Temperature Co-fired Ceramics' (LTCC). Because of the similar materials of Tauman and Tantalum, they can be connected to the wafer, and their thermal conductivity and heat resistance are very good. However, the low-temperature co-fired multi-layer ceramics need to be sintered at a temperature of about 900 degrees, which has different shrinkage phenomena, tends to increase electrical fluctuation factors, and the ceramic process is expensive, and the mass production cost is not easily lowered. In addition, although some operators consider the two-shot technology to make the lead frame, in the existing two-shot technology, there are two methods: PCK method and SKW method. The PCK method is the first injection molding method. Plastics that can be electroplated and modified via catalysis are used, which are made of non-platable plastic during the second injection molding, and the surface of the component is then etch activated and metallized. As for the SKW method, the electroplated plastic is used in the first injection molding, and then the first injection molded plastic surface is etched, and the surface is activated with palladium (pd), the component is placed in the mold, and the execution is performed. After the second injection molding, the surface of the component is metallized. These two methods are limited in the processing of extremely fine lines and are limited by the two-shot process, and cannot effectively form extremely fine lines. In other words, the existing light-emitting diode lead frame may not be able to reduce the manufacturing cost due to the complicated process, or the surface may be rough due to the activation of the laser, thereby failing to achieve the original design reflection angle and reflection brightness, thereby affecting the Reflectivity is not suitable for micronized insulated circuit patterns, so how to provide a wire that combines ease of fabrication, low cost, and high reflectivity

Claims (1)

M368893 六、申請專利範圍: , Λ. 一種具反射及導體金屬層之塑料導線架結構,包括:基 . 座,該基座係於頂面往下傾斜形成一反射面,再於反射 面的外周緣形成有一呈交錯之載體嵌槽,該載體嵌槽内 再以射出技術形成一載體,其基座表面還沉積有一介面 層,該介面層為以化學鍍法形成於基座表面,亦再利用 雷射技術剝離部份介面層以形成一絕緣線路,最後施行 Φ 電鍍或化學沉積金屬層在基座上,以形成具反射金屬層 之塑料導線架結構者。 2.如中請專利範圍第!項所述之具反射及導體金屬層之塑 料導線架結構’其中該基座與載體可為不同塑料材質之 雙料射出所成型。M368893 VI. Patent application scope: Λ. A plastic lead frame structure with a reflective and conductive metal layer, comprising: a base, the base is inclined downwardly to form a reflecting surface on the top surface, and then on the outer periphery of the reflecting surface The edge is formed with a staggered carrier recess, and a carrier is formed by the injection technique in the carrier recess, and a surface layer is further deposited on the surface of the base. The interface layer is formed on the surface of the base by electroless plating, and is reused. The laser technique strips a portion of the interface layer to form an insulated line, and finally performs a Φ plating or chemical deposition of a metal layer on the pedestal to form a plastic leadframe structure having a reflective metal layer. 2. Please ask for the scope of patents! The plastic lead frame structure of the reflective and conductive metal layer is wherein the pedestal and the carrier are formed by two-shot injection of different plastic materials. 如申π專利㈣第i項所述之具反射及導體金屬層之塑 料導線架L構’其巾該基座與載體可為相同塑料材質之 射出所成型’又基座内摻雜有含金屬觸媒的塑料或 含有機物的塑料。 4. 5. 如申哨專利|&圍第!項所述之具反射及導體金屬層之塑 料導線架結構,其中該基座為由摻雜包含金屬觸媒的塑 ㈣料形成’並_與無金屬觸媒塑料或 無有機物塑料形成有—緊附於基座之載體,且基座係於 頂面往下傾斜形成—反射面,以構成一導線架胚料。 如申請專利範圍第1項所述之具反射及導體金屬層之塑 13 M368893 中該基座採用單一塑料射 ,所形成之基座利用蝕刻 出,此塑料 ’於其表面 料導線架結構,其 經過射出成型基座 均勻浸泡或塗佈觸媒,隨後將此具有整體觸媒浸泡或塗 佈之基座進行第二次使用相同塑料之射出成型製程,第 次射出成型時為嵌入式射出形成载體,其中基座係於 頂面往下傾斜形成一反射面,以構成一導線架胚料。 6_如申請專利範圍第3或4項所述之具反射及導體金屬層 之塑料導線架結構,其中該金屬觸媒或其有機物主要為 鈀、銅、銀等。 如申請專利範圍第1、4或5項所述之具反射及導體金 屬層之塑料導線架結構,其中該頂面與其反射面界定的 夾角是介於15度至85度之間,以提升發光二極體發光 效率。 8·如申請專利範圍第4項所述之具反射及導體金屬層之塑 料導線架結構,其中產生一導線架胚料後,隨後進行局 表面活化之電鍵浴前處理,並於基座表面以化學鑛法 沉積一介面層。 9_如申請專利範圍第5項所述之具反射及導體金屬層之塑 料導線架結構’其中產生一導線架胚料後,隨後進行局 部表面活化之電鍍浴前處理,並於基座表面以化學鑛法 沉積一介面層。 1〇_如申請專利範圍第8項所述之具反射及導體金屬層之塑 M368893 - 料導線架結構,其中該介面層之鍍設沉積後 進行局部之介面層的剝離以形成一絕緣線路 11·如申請專利範圍第9項所述之具反射及導體金屬層之塑 料導線架結構’其中該介面層之鍍設沉積後,利用雷射 進行局部之介面層的剝離以形成一絕緣線路。 12_如申請專利範圍第10項所述之具反射及導體金屬層之 塑料導線架結構,其中該絕緣線路的介面層上,再利用For example, the plastic lead frame L with reflection and conductor metal layer described in the item (4) of the π patent (4), the base and the carrier can be formed by the injection of the same plastic material, and the base is doped with metal. Catalyst plastic or plastic containing organic matter. 4. 5. Such as the whistle patent | & A plastic lead frame structure having a reflective and conductive metal layer, wherein the pedestal is formed by doping a plastic (tetra) material containing a metal catalyst, and is formed with a metal-free catalytic plastic or an organic-free plastic. A carrier attached to the base, and the base is inclined downwardly from the top surface to form a reflecting surface to constitute a lead frame blank. In the plastic 13 M368893 with a reflective and conductive metal layer as described in claim 1, the susceptor is formed by a single plastic shot, and the formed pedestal is etched out, and the plastic is in its surface material lead frame structure, After the injection molding base is uniformly immersed or coated with the catalyst, the base having the whole catalyst soaked or coated is then subjected to the second injection molding process using the same plastic, and the injection molding is carried out for the first injection molding. The body, wherein the base is inclined downward from the top surface to form a reflecting surface to form a lead frame blank. 6_ A plastic lead frame structure having a reflective and conductive metal layer as described in claim 3 or 4, wherein the metal catalyst or an organic substance thereof is mainly palladium, copper, silver or the like. The plastic lead frame structure having a reflective and conductive metal layer as described in claim 1, 4 or 5, wherein the top surface and the reflecting surface define an angle between 15 degrees and 85 degrees to enhance the illumination. Diode luminous efficiency. 8. A plastic lead frame structure having a reflective and conductive metal layer as described in claim 4, wherein a lead frame blank is produced, followed by a surface-activated key bath pretreatment, and is applied to the surface of the base. A mineral layer is deposited by a chemical ore method. 9_A plastic lead frame structure having a reflective and conductive metal layer as described in claim 5, wherein a lead frame blank is produced, followed by a partial surface activation plating bath pretreatment, and on the surface of the base A mineral layer is deposited by a chemical ore method. 1 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A plastic lead frame structure having a reflective and conductive metal layer as described in claim 9 wherein after the plating of the interface layer is deposited, partial peeling of the interface layer is performed by laser to form an insulated line. 12_ A plastic lead frame structure having a reflective and conductive metal layer as described in claim 10, wherein the insulating layer is reused on the interface layer 電鍍或化學沉積金屬層,而完成該塑料導線架結構之製 作。 13_如申請專利範圍第11項所述之具反射及導體金屬層之 塑料導線架結構,其中該絕緣線路的介面層上,再利用 電錄或化學沉積金屬層,而完成該塑料導線架結構之製 作。 14.如申請專利範圍第1、8或9項所述之具反射及導體金 屬層之塑料導線架結構,其中該化學鍍法係成長化學鎳 或化學銅於基座表面以形成一介面層。 15·如申請專利範圍第1、12或13項所述之具反射及導體 金屬層之塑料導線架結構’其中該電鍍或化學沉積的金 屬層可選自銅、鎳、銀、金、鉻、化學置換金、銅/鎳/ 銀、銅/鎳/金所構成之群組之任一者所形成。 16_如申請專利範圍第4或5項所述之具反射及導體金屬層 之塑料導線架結構’其中該形成基座與載體之塑料可選 15The metal layer is electroplated or chemically deposited to complete the fabrication of the plastic leadframe structure. 13_ The plastic lead frame structure having a reflective and conductive metal layer according to claim 11 wherein the dielectric layer of the insulated circuit is electrically or chemically deposited on the interface layer of the insulated circuit to complete the plastic lead frame structure Production. 14. A plastic leadframe structure having a reflective and conductor metal layer as described in claim 1, 8 or 9, wherein the electroless plating process grows chemical nickel or chemical copper on the surface of the pedestal to form an interfacial layer. 15. A plastic leadframe structure having a reflective and conductor metal layer as described in claim 1, 12 or 13 wherein the plated or chemically deposited metal layer is selected from the group consisting of copper, nickel, silver, gold, chromium, It is formed by any of a group consisting of chemically substituted gold, copper/nickel/silver, and copper/nickel/gold. 16_ A plastic lead frame structure having a reflective and conductive metal layer as described in claim 4 or 5 wherein the plastic forming the pedestal and the carrier is optional. 需求。 M368893 » 擇能夠耐高溫大於260度的塑料,以符合回焊的 17.如申請專利範圍第1或10項所述之具反射及導體金屬 層之塑料導線架結構,其中該雷射源則可選自二氧化碳 雷射、铷雅鉻(Nd:YAG)雷射、掺鈥釩酸釔(Nd:YV04)晶體 雷射、準分子雷射等,該雷射絕緣步驟的雷射波長係選 自於 248 nm、308 nm、355 nm、532 nm、1064 nm 或 10600 nm中選用。demand. M368893 » A plastic lead frame structure with a reflective and conductive metal layer as described in claim 1 or 10, which is capable of withstanding a plastic having a high temperature resistance of more than 260 degrees, in accordance with the reflow process. Selecting from a carbon dioxide laser, a Nd:YAG laser, a Nd:YV04 crystal laser, a pseudo-laser, etc., the laser wavelength of the laser insulation step is selected from Used in 248 nm, 308 nm, 355 nm, 532 nm, 1064 nm or 10600 nm. 1616
TW98206318U 2009-04-16 2009-04-16 Plastic lead frame structure with reflective and conductor metal layer TWM368893U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011041934A1 (en) * 2009-10-06 2011-04-14 光宏精密股份有限公司 Semiconductor carrier structure
TWI450374B (en) * 2010-07-20 2014-08-21
TWI478404B (en) * 2010-07-20 2015-03-21

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011041934A1 (en) * 2009-10-06 2011-04-14 光宏精密股份有限公司 Semiconductor carrier structure
TWI450374B (en) * 2010-07-20 2014-08-21
TWI478404B (en) * 2010-07-20 2015-03-21

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