201104729 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種向半導體基板、液晶顯示裝置用玻璃 基板、光罩用玻璃基板、光碟用基板、陶兗板等（以下朽 單地稱作「基板」）吐出清洗液之液滴而進行清洗之基板 清洗方法及基板清洗裝置。 【先前技術】 先前，於半導體基板等之製造製矛呈中，I除基板上所附 著之微粒之清洗步驟係必需之步驟。於執行清洗步驟之葉 片式之清洗裝置中，利用的是藉由向基板喷射純水等清洗 液之微小液滴而對基板進行清洗之技術。 於此種清洗I置巾’例如專利文獻1所揭示般廣泛使用 如下之雙流體喷嘴：將清洗液與加壓後之氣體加以混合而 生成液滴’並將該液滴與氣體之混合流體喷射至基板。附 者於基板上之微粒等異物，葬由主 ㈣错由^月洗液之液滴之動能而物 理性地去n於專敎獻2中“有—種清 使壓電元件以超音波頻段之 . A , 领半重歿進行膨脹收縮，藉此 使自吐出口向一方向加速杳 π冼液之霧滴高速喷向基板。 另一方面，作為吐出液滴 古括你^ — /苟之技術’於專利文獻3中揭示 有一種使形成有倒錐形之吐出口 ^ ^ ^ ^ ™ 之/專膜振動而生成液滴之 液滴喷霧裝置。又，於專利 , 令揭不有一種喷墨印表 俄n驚碩，於形成有切口部 ^ 墨’在管道之除切口部以外："官道内填充油 油墨振動，藉此喷出油墨之液：周相上黏附振盈器而使 146585.doc 201104729 又，於專利文獻5、6中揭示有一種與喷墨印表機之列印 頭同樣地、藉由壓電元件等而吐出固定量之清洗液之液滴 的噴墨方式之清洗喷嘴。 [先前技術文獻] [專利文獻] [專利文獻1]曰本專利特開2007-227878號公報 [專利文獻2]曰本專利特開2000-533號公報 [專利文獻3]日本專利第3659593號公報 [專利文獻4]曰本專利實公平7-7164號公報 [專利文獻5]日本專利特開2003-283103號公報 [專利文獻6]日本專利特開2004-327487號公報 【發明内容】 [發明所欲解決之問題] 然而’於使用如專利文獻1所揭示之雙流體喷嘴之情形 時，所生成之液滴之速度及大小（液滴之直徑）分布於較廣 之範圍。於半導體基板之清洗製程中，需要確實地去除微 粒而又不會破壞基板上之元件，但若液滴之速度及大小分 布於較廣之範圍，則會存在無益於去除微粒之多餘液滴， 另一方面，亦存在如對元件造成損傷之有害的液滴。其結 果為，存在清洗效率之提高受到抑制、並且有可能產生元 件破壞之問題。此種問題於其他基板之清洗中亦同樣存 在’其結果導致出現不均一之清洗。 本發明係鑒於上述問題而完成者，其目的在於提供—種 可知咼基板之清洗效率之基板清洗方法及基板清洗裝置。 146585.doc • 4 - 201104729 又，本發明之目的在於提供一種可於較短之清洗時間内 清洗基板之整個表面之基板清洗方法及基板清洗裝置。 [解決問題之技術手段] 為了解決上述問題，請求項1之發明係一種基板清洗方 法’其特徵在於：其係向基板吐出清洗液之液滴而進行清 洗者；生成平均液滴直徑為1 5 μπ!以上且200 μηι以下、且 液滴直徑之分布以3σ(σ為標準偏差）計集中在上述平均液 滴直徑之10%以下之清洗液的液滴並向基板吐出。 又’請求項2之發明係如請求項1之發明之基板清洗方 法’其特徵在於：將平均液滴速度為2〇米/秒以上且1 〇〇米/ 秒以下、且液滴速度之分布以3σ(σ為標準偏差）計集中在 上述平均液滴速度之10%以下之液滴向基板吐出。 又，請求項3之發明係如請求項1或2之發明之基板清洗 方法，其特徵在於：將上述液滴以1〇毫升/分鐘以上之液 滴流量向基板吐出。 又，請求項4之發明係一種基板清洗方法，其特徵在 於··其係向半導體基板吐出清洗液之液滴而進行清洗者； 生成平均液滴直徑為15 μηι以上且30 μπι以下、且液滴直徑 之分布以3 σ(σ為標準偏差）計集中在2 μπι以下之清洗液的 液滴並向半導體基板吐出。 又’請求項5之發明係如請求項4之發明之基板清洗方 法’其特徵在於：將平均液滴速度為2〇米/秒以上且6〇米/ 秒以下、且液滴速度之分布以3σ(σ為標準偏差）計集中在5 米/秒以下之液滴向半導體基板吐出。 1465S5.doc 201104729 长項6之發明係如請求項4或5之發明之基板清洗 方法’其特徵在於：將上述液滴以1〇毫升/分鐘以上之液 滴流量向半導體基板吐出。 、又，吻求項7之發明係一種基板清洗方法，其特徵在 ；其係向基板吐出清洗液之液滴而進行清洗者；向壁面 上穿設有複數個吐m狀體⑽送清錄，並對該清 洗液賦予振動’藉此將平均液滴直徑415 μιη以上且200 μηι以下、且液滴直徑之分布以3σ(σ為標準偏差）計集中在 上述平均液滴直徑之10%以下之清洗液的液滴，自上述複 數個吐出孔向基板吐出。 又，請求項8之發明係如請求項7之發明之基板清洗方 法，其特徵在於：將平均液滴速度為2〇米/秒以上且1〇〇米/ 秒以下、且液滴速度之分布以3 σ(σ為標準偏差）計集中在 上述平均液滴速度之丨〇%以下之液滴，自上述複數個吐出 孔向基板吐出。 又，請求項9之發明係如請求項7或8之發明之基板清洗 方法’其特徵在於：將清洗液之液滴以丨〇毫升/分鐘以上 之液滴流量自上述複數個吐出孔向基板吐出。 又’請求項10之發明係一種基板清洗方法，其特徵在 於：其係向半導體基板吐出清洗液之液滴而進行清洗者； 向壁面上穿設有複數個吐出孔之筒狀體内輸送清洗液，並 對該清洗液賦予振動’藉此將平均液滴直經為丨5 μιη以上 且30 μπι以下、且液滴直徑之分布以3σ(σ為標準偏差）計集 中在2 μηι以下之清洗液之液滴，自上述複數個吐出孔向半 146585.doc 201104729 導體基板吐出。 又，請求項11之發明係如請求項10之發明之基板清洗方 法’其特徵在於：將平均液滴遠度為2〇米/秒以上且6〇米/ 秒以下、且液滴速度之分布以3σ(σ為標準偏差）計集中在5 米/秒以下之液滴，自上述複數個吐出孔向半導體基板吐 出。 又，請求項12之發明係如請求項1 〇或丨丨之發明之基板清 洗方法’其特徵在於：將清洗液之液滴以1〇毫升/分鐘以 上之液滴流量’自上述複數個吐出孔向半導體基板吐出。 又’請求項13之發明係一種基板清洗裝置，其特徵在 於：其係向基板吐出清洗液之液滴而進行清洗者，且包括 清洗嗔嘴’該清洗噴嘴具有於壁面上穿設有複數個吐出孔 之筒狀體及貼設於上述壁面上之壓電元件，自上述壓電元 件對輸送至上述筒狀體之清洗液賦予振動，藉此將平均液 滴直徑為15 μιη以上且200 以下、且液滴直徑之分布以 3σ(σ為標準偏差）計集中在上述平均液滴直徑之1〇%以下之 清洗液的液滴，自上述複數個吐出孔向基板吐出。 又’請求項14之發明係如請求項13之發明之基板清洗裝 置’其特徵在於：上述清洗喷嘴將平均液滴速度為2〇米/ 秒以上且1〇〇米/秒以下、且液滴速度之分布α3σ(σ為標準 偏差）計集中在上述平均液滴速度之i 〇%以下之液滴，自上 述複數個吐出孔向基板吐出。 又’請求項15之發明係如請求項13或14之發明之基板清 洗裝置’其特徵在於：上述清洗喷嘴將清洗液之液滴以1〇 146585.doc 201104729 毫升/分鐘以上之液滴流量’自上述複數個吐出孔向基板 吐出。 又’請求項16之發明係一種基板清洗裝置，其特徵在 於··其係向半導體基板吐出清洗液之液滴而進行清洗者， 且包括清洗喷嘴，該清洗喷嘴具有於壁面上穿設有複數個 吐出孔之筒狀體及貼設於上述壁面上之壓電元件，自上述 壓電元件對輸送至上述筒狀體之清洗液賦予振動，藉此將 平均液滴直徑為1 5 μπι以上且3 0 μηι以下、且液滴直徑之分 布以3σ(σ為標準偏差）計集中在2 μηι以下之清洗液之液 滴’自上述複數個吐出孔向半導體基板吐出。 又’請求項17之發明係如請求項16之發明之基板清洗裝 置’其特徵在於：上述清洗喷嘴將平均液滴速度為2〇米/ 秒以上且60米/秒以下、且液滴速度之分布以3σ(σ為標準 偏差）計集中在5米/秒以下之液滴，自上述複數個吐出孔向 半導體基板吐出。 又’請求項18之發明係如請求項16或17之發明之基板清 洗裝置’其特徵在於：上述清洗喷嘴將清洗液之液滴以1〇 毫升/分鐘以上之液滴流量，自上述複數個吐出孔向半導 體基板吐出。 又，請求項19之發明係如請求項13或16之發明之基板清 洗裝置’其特徵在於：上述筒狀體為圓筒。 又’請求項20之發明係如請求項13或16之發明之基板清 洗裝置’其特徵在於：其更包括：壓送泵，其自上述筒狀 體之一端側開口輸送清洗液；及閥，其關閉上述筒狀體之 146585.doc 201104729 另一端側開口。 又，請求項21之發明係一種基板清洗裝置，其特徵在 於：其係將直徑固定之清洗液之液滴以固定速度連續地吐 出至基板而進行清洗者’且包括：旋轉保持機構，其保持 基板並使之旋轉；液膜形成機構，其向上述旋轉保持機構 所保持之基板之上表面吐出液體而形成液膜；及清洗頭， 其穿設有60個以上且300個以下之吐出孔，其各將直徑固 定之清洗液之液滴以固定速度連續地吐出。 又’請求項22之發明係如請求項2 1之發明之基板清洗裝 置，其特徵在於：於上述清洗頭上將60個以下之吐出孔排 成一行之孔行設置有5行以下。 又，請求項23之發明係如請求項22之發明之基板清洗裝 置’其特徵在於：於上述清洗頭上將2〇個吐出孔排成一行 之孔行設置有4行。 又’請求項24之發明係如請求項22之發明之基板清洗裝 置’其特徵在於：於上述清洗頭上將60個吐出孔排成一行 之孔行設置有1行。 又’请求項25之發明係如請求項2 1至24中之任一項之發 明之基板清洗裝置，其特徵在於：穿設於上述清洗頭之吐 出孔之孔徑為1 5 μιη，且將直徑2〇 μιη之清洗液之液滴以40 m/s之液滴速度自該吐出孔連續地吐出。 又，請求項26之發明係一種基板清洗方法，其特徵在 於·其係將直徑固定之清洗液之液滴以固定速度連續地吐 出至基板而進行清洗者，且包括：液膜形成步驟，向旋轉 146585.doc 201104729 之基板之上表面吐出液體而形成液膜；及液滴吐出步驟， 自穿設於清洗頭之60個以上且3〇〇個以下之吐出孔之各 個，將直徑固定之清洗液之液滴以固定速度連續地吐出。 又’請求項27之發明係如請求項26之發明之基板清洗方 法，其特徵在於：於上述清洗頭上將60個以下之吐出孔排 成一行之孔行設置有5行以下。 又，請求項28之發明係如請求項27之發明之基板清洗方 法，其特徵在於：於上述清洗頭上將20個吐出孔排成一行 之孔行設置有4行。 又’請求項29之發明係如請求項27之發明之基板清洗方 法’其特徵在於：於上述清洗頭上將60個吐出孔排成一行 之孔行設置有1行。 又，請求項30之發明係如請求項26至29中之任一項之發 明之基板清洗方法，其特徵在於：自各個吐出孔將直徑20 μηι之清洗液之液滴以40 m/s之液滴速度連續地吐出。 [發明之效果] 根據請求項1〜3、7〜9、13〜15之發明，將平均液滴直徑 為1 5 μιη以上且2 0 0 μηι以下、且液滴直徑之分布以3 σ計集 中在平均液滴直徑之10%以下之清洗液的液滴向基板吐 出，因此無益於清洗之多餘液滴較少，可提高基板之清洗 效率。 特別是根據請求項2、8、14之發明，將平均液滴速度為 20米/秒以上且1〇〇米/秒以下、且液滴速度之分布以3σ計集 中在平均液滴速度之10%以下之液滴向基板吐出’因此可 146585.doc •10- 201104729 獲得充分之清洗效率。 特別是根據請求項3、9、1 5之發明，以1 〇毫升/分鐘以 上之液滴流量將液滴向基板吐出，故可於短時間内進行充 分之清洗。 又，根據請求項4〜6、10〜12、16〜18之發明，將平均液 滴直徑為1 5 μπι以上且3 0 μπι以下、且液滴直徑之分布以3 σ 計集中在2 μιη以下之清洗液之液滴向半導體基板吐出，故 無益於清洗之多餘液滴或對半導體基板造成損傷之液滴較 少’可提高基板之清洗效率。 特別是根據請求項5、11、17之發明，將平均液滴速度 為20米/秒以上且60米/秒以下、且液滴速度之分布以3〇計 集中在5米/秒以下之液滴向半導體基板吐出，因此可獲得 充分之清洗效率。 特別是根據請求項6、1 2、1 8之發明，以1 〇毫升/分鐘以 上之液滴流量將液滴向半導體基板吐出，因此可於短時間 内進行充分之清洗。 根據請求項21至請求項2 5之發明，於清洗頭穿設有分別 將直徑固定之清洗液之液滴以固定速度連續地吐出之6〇個 以上且300個以下之吐出孔，因此可於當前允許之比較短 之清洗時間内清洗基板之整個表面。 特別是根據請‘求項22之發明’於清洗頭上將6〇個以下之 吐出孔排成一行之孔行設置有5行以下，因此可於與所有 吐出孔相對應之位置上形成液膜。 又’根據請求項2 6至s青求項3 0之發明，自穿設於清洗頭 146585.doc • 11 · 201104729 之60個以上且300個以下之吐出孔之各個將直徑固定之 清洗液之液滴以固定速度連續地吐出，因此可於當前允許 之比較短之清洗時間内清洗基板之整個表面。 特別疋根據凊求項27之發明，於清洗頭上將6〇個以下之 吐出孔排成一行之孔行設置有5行以下，因此可於與所有 吐出孔相對應之位置上形成液膜。 【實施方式】 以下，一邊參照圖式一邊對本發明之實施形態進行詳細 地說明。 <第1實施形態> 圖1係表示用於清洗半導體基板之較佳之第丨實施形態之 基板清洗裝置的圖。該基板清洗裝置丨係一塊一塊地清洗 半導體之基板W之葉片式之清洗裝置，其將附著於圓形之 矽之基板W上之微粒等污染物質去除並加以清洗。基板清 洗裝置1之主要構成包括旋轉保持部10、處理杯20、防濺 罩3 0、喷嘴驅動部5 〇、清洗頭6 〇、及控制部.9 〇。 旋轉保持部10具備旋轉基座11、旋轉軸〖3及馬達14。旋 轉基座11係具有略大於基板W之直徑之圓板狀構件。於旋 轉基座11之上表面周邊部’沿同一圓周上而豎立設置有複 數個（本實施形態中為6個）支持銷12 ^各支持銷12包括：圓 筒狀之支持部，其自下方支持基板W之下表面周邊部；及 銷部’其突出設置於上述支持部之上表面，且與基板 端緣部抵接並加以按壓。將6個支持銷12中之3個作為固定 設置於旋轉基座11上之固定支持銷。固定支持銷於圓筒狀 146585.doc -12- 201104729 支持部之軸心上突出設置有銷部。另一方面，將6個支持 銷12中之剩餘的3個，作為設置成相對於旋轉基座丨〖而旋 轉（自轉）自如之可動支持銷。於可動支持銷上，自圓筒狀 支持部之軸心略微偏離而突出設置有銷部。3個可動支持 銷藉由省略圖示之連桿機構及驅動機構連動而被旋動驅 動。藉由可動支持銷旋動，可利用6個銷部失持基板w之 端緣部、且可解除基板w之夾持。利用6個支持銷丨2而炎 持基板W之端緣部，藉此旋轉基座丨丨可將基板贾保持為水 平姿勢’而無需接觸基板W之下表面中央部。 旋轉軸13係垂直設置於旋轉基座11之下表面側中心部。 旋轉軸13經由驅動皮帶15而與馬達14之驅動滑輪16連動連 結。若馬達14使驅動滑輪16旋轉驅動，則驅動皮帶丨5繞 動，旋轉軸13旋轉。藉此，經旋轉基座u所保持之基板w 於水平面内在沿鉛垂方向之中心軸RX之周圍與旋轉基座 11及旋轉轴13—併旋轉。 又，旋轉軸13之内側為中空，且於其中空部分沿鉛垂方 向而插入設置有處理液噴嘴18。處理液噴嘴18與省略圖示 之處理液供給源連通連接。處理液喷嘴18之前端係朝向經 旋轉基座11所保持之基板W之下表面中心部而開口。因 此，可自處理液喷嘴18之前端向基板w之下表面中心部供 給處理液。 又，將旋轉軸13之内壁面與處理液喷嘴18之外壁面之間 之縫隙作為氣體供給流路，且與省略圖示之氣體供給源連 通連接。可自該縫隙之上端朝向經旋轉基座“所保持之基 146585.doc 13 201104729 板w之下表面供給氣體。 包圍旋轉保持部10而設置有處理杯20。於處理杯20之内 側設置有圓筒狀之間隔壁21。又，以包圍旋轉保持部10之 周圍之方式，於間隔壁21之内側形成排液空間22，用以排 出用於基板W之清洗處理之清洗液。進而，以包圍排液空 間22之方式，於處理杯2〇之外壁與間隔壁以之間形成回收 空間23 ’用以回收用於基板冒之清洗處理之清洗液。 於排液空間22上連接有用以將清洗液導向排液處理裝置 (省略圖示）之排液管27，且於回收空間23上連接有用以將 清洗液導向回收處理裝置（省略圖示）之回收管28。 於處理杯20之上方，設置有用以防止來自基板w之清洗 液向外側飛散之防濺罩30。該防濺罩3〇形成為相對於中心 軸RX而旋轉對稱之形狀。於防濺罩3〇之上端部之内表面 上’環狀形成有剖面V字形狀之排液導引槽3丨。又，於防 減:罩30之下&部之内表面上，形成有包含向外側下方傾斜 之傾斜面之回收液導引部32。於回收液導引部32之上端附 近處，形成有用以收納處理杯2〇之間隔壁21之間隔壁收納 槽33 〇 該防濺罩30藉由由滾珠螺桿機構等構成之護罩升降驅動 機構35，而沿鉛垂方向升降驅動。護罩升降驅動機構35使 防濺罩30於回收液導引部32包圍經旋轉基座12所保持之基 板W之端緣部之回收位置、與排液導引槽3丨包圍經旋轉基 座11所保持的基板w之端緣部之排液位置之間而升降。當 防濺罩30位於回收位置（圖i所示之位置）時，自基板界之端 146585.doc 14 201104729 緣部飛散之清洗液藉由回收液導引部3 2而被導入至回收空 間23 ’並經由回收管28而回收。另一方面，當防濺罩3〇位 於排液位置時，自基板W之端緣部飛散之清洗液藉由排液 導引槽3 1而被導入至排液空間22，並經由排液管27而排 出。如此一來’可切換清洗液之排液及回收而執行。又， 於將基板W交付至旋轉基座η之情形時，護罩升降驅動機 構35使防濺罩30下降至旋轉基座丨丨較防濺罩3〇之上端更突 出之奇度位置為止。 喷嘴驅動部50包括升降馬達51、擺動馬達53及喷嘴臂 58。於喷嘴臂58之前端安裝有清洗頭6〇。喷嘴臂58之基端 側係連結於擺動馬達53之馬達軸53a上。擺動馬達53使清 洗頭60以馬達轴53a為中心而於水平面内旋動。 擺動馬達53係安裝於升降基座54上。升降基座54旋接於 直接連接於固定設置之升降馬達51之馬達軸的滾珠螺桿52 上，並且滑動自如地安裝於導引構件55上。若升降馬達51 使滾珠螺桿52旋轉’則清洗頭60與升降基座54一併升降。 藉由喷嘴驅動部50之升降馬達51及擺動馬達53，清洗頭 60於較防滅罩30更外側之避讓位置與旋轉基座丨丨之上方之 清洗位置之間移動。又，清洗頭6〇於旋轉基座丨丨之上方， 藉由擺動馬達53而於基板w之中心部上方與端緣部上方之 間擺動。 又’控制部90對設置於基板清洗裝置1上之各種動作機 構進行控制。控制部9〇之硬體之構成與通常之電腦相同。 即’控制部90包括進行各種運算處理之CPU(central 146585.doc -15· 201104729 processing unit，中央處理單元）、記憶基本程式之讀出專 用之記憶體即ROM(read only memory，唯讀記憶體）、記 憶各種資訊之讀寫自如之記憶體即RAM(Random -access memory ’隨機存取記憶體）及記憶控制用軟體或資料等之 磁碟。 圖2係表示第1實施形態之清洗頭60之概略構成之圖。 又，圖3係清洗頭60之立體圖。清洗頭60構成為於圓筒之 筒狀體61上貼設有壓電元件（piezo element)62。清洗頭60 經由樹脂製之固持件63而安裝於喷嘴臂5 8之前端《再者， 於圖3中省略了固持件63。於圓筒形狀之筒狀體61之内側 形成有中空空間，且其兩端形成開口。於本實施形態中， 筒狀體61係由石英而形成，且其長度方向長度為5〇 mm。 再者’筒狀體61亦可由氧化錯（Zr〇2)等之陶瓷而形成。 於筒狀體61之壁面上穿設有複數個（第1實施形態中為2〇 個）吐出孔64。20個吐出孔64係沿筒狀體61之長度方向而 排列成一行。各吐出孔64係貫通筒狀體61之側壁之大致圓 筒形狀。20個吐出孔64之直徑均一，為7 μηι以上且12 μηι 以下之範圍。20個吐出孔64之排列間距（鄰接之吐出孔64 間之距離）為1 mm。 又，於筒狀體61之壁面上之與複數個吐出孔以相對向之 部位之外壁面上貼設有壓電元件62。壓電元件62與具有高 頻產生器之電源65電性連接。電源65將特定頻率之交流電 壓施加於壓電元件62上。 筒狀體61之内側空間之一端侧開口經由供給配管7〇而與 146585.doc 201104729 清洗液供給源71連通連接。於供給配管7 0之路徑中途介插 有壓送泵72及過濾器73。壓送泵72自清洗液供給源71朝向 清洗頭60壓送清洗液（本實施形態中為純水）。過濾器73將 自清洗液供給源71所輸送之清洗液中包含之異物除去。 另一方面，於筒狀體61之内側空間之另一端側開口上連 通連接有排出配管75。於排出配管75之路徑中途介插有閥 %。若一邊於筒狀體61之内側空間自供給配管7〇供給清洗 液一邊打開閥76 ’則排出配管75向裝置外部排出清洗液。 其-人’對具有上述構成之基板清洗裝置1之處理動作加 以說明。以下所說明之處理動作係藉由控制部9〇執行特定 之清洗處理用軟體而控制基板清洗裝置丨之各機構而進行 者。 首先，於防濺罩30下降且旋轉基座丨丨較防濺罩3〇向更上 方突出之狀態下，將基板W交付至旋轉基座n。繼而，防 濺罩30上升至上述排液位置為止，並且喷嘴驅動部使清 洗頭60移動至經旋轉基座11所保持之基板W之上方之清洗 位置為止。於清洗位置處，清洗頭6〇之複數個吐出孔以與 基板W之間隔設為5 mm以上且25 mm以下。 P便於不進行清洗處理時，亦始終連續地自廢送栗Μ向 清洗頭的輸送清洗液。當不進行清洗處理時，閥76打開， 且輸送至筒狀體61之内部之清洗液直接自排出配管75持續 排出至裝置外部。，當清洗頭6g於較防料Μ更外側之 避讓位置處待機、&自避讓位置起移動至基板W上方之清 洗位置時’亦持續向清洗頭6〇供給清洗液，言亥清洗液持續 146585.doc 201104729 排出至裝置外部。 接下來，藉由旋轉保持部10開始基板W之旋轉，並且自 清洗頭60將清洗液之液滴朝向基板W之上表面吐出。此 時’亦可自處理液噴嘴18朝向基板W之下表面而吐出清洗 液。又’藉由喷嘴驅動部5 0使清洗頭6 〇於基板w之中心部 上方與端緣部上方之間擺動’而不斷進行清洗處理。於進 行清洗處理時，係一邊向清洗頭60輸送清洗液一邊關閉閥 76。因此’筒狀體61内部之清洗液之液壓上升，並藉此自 20個吐出孔64吐出清洗液。於本實施形態中，筒狀體61内 部之清洗液之液壓設為10 MPa以下。 又，於進行清洗處理時，電源65將特定頻率之交流電壓 施加於壓電元件62上。藉此，壓電元件62重複膨脹收縮， 並對琦狀體61内部之清洗液賦予特定頻率之振動。若提高 筒狀體61之内部之清洗液之液壓並且對該清洗液賦予振 動，則因液壓而自20個吐出孔64流出之清洗液藉由振動而 被分散•分開，從而生成並吐出清洗液之液滴。此處，自 吐出孔64流出之液流被分開而生成液滴係藉由以下之過程 而實現。於筒狀體61内維持固定壓力或者具有較小範圍之 壓力（D.C(direct current).pressure，直流壓）而供給清洗 液。自吐出孔64藉由上述壓力而自2〇個吐出孔64以實質上 相同之吐出率流出清洗液。若於該狀態下對壓電元件“施 加固定之特定頻率之交流電壓，則液流因所產生之振動被 分散•分開而形成液滴。此處之利用壓送泵72供給清洗液 之供給壓力與施加於壓電元件62上之交流之頻率，係如先 146585.doc -18· 201104729 前技術所記載之連續喷墨裝置之通常之操作範圍以外的 值。附著於基板w上之微粒等污染物質藉由自清洗頭6〇所 吐出之液滴的動能而被物理地去除。 此處，控制部90控制壓送泵72而調整筒狀體61内部之清 洗液之液壓，並且控制電源65而調整賦予給清洗液之振 動，藉此可規定自20個吐出扎64所吐出之液滴的吐出條件 (參數）。除該等以外，吐出孔64之直徑及個數亦對液滴之 吐出條件存在影響。 於本實施形態中，自20個吐出孔64朝向基板冒吐出之清 洗液之液滴之平均液滴直徑設為15 μΓη以上且3〇 pm以下。 此處，重要點在於：自清洗頭60吐出之液滴之液滴直徑不 會遍及15 μπι至30 μπι之範圍而較廣地分布，不均極其小。 具體而言，液滴直徑之分布以3σ(σ為標準偏差）計為2 μηι 以下。 圖4係表示清洗液之液滴直徑之分布之圖。於圖*中，以 實線表示自本實施形態之清洗頭60所吐出之液滴之液滴直 徑分布，以虛線表示自先前之雙流體噴嘴所吐出之液滴的 液滴直徑分布。自先前之雙流體喷嘴所吐出之液滴之液滴 直徑具有較廣之分布，既包含液滴直徑為15 μιηΐ3〇 之 液滴，但亦含有大量液滴直徑處於該範圍以外之液滴。與 此相較，自本實施形態之清洗頭60所吐出之液滴之液滴直 徑之分布極其窄，大體上無不均。 又，於本實施形態中，自20個吐出孔64朝向基板冒吐出 之清洗液之液滴之平均液滴速度設為2〇米/秒以上且6〇米/ 146585.doc -19- 201104729 秒以下。與液滴直徑同樣地’自清洗頭60所吐出之液滴之 液滴速度並不會遍及20米/秒至60米/秒之範圍而較廣地分 布’不均極其小。具體而言’液滴速度之分布以3σ計為5 米/秒以下。 圖5係表示清洗液之液滴速度之分布之圖。於圖5中，亦 以實線表示自本實施形態之清洗頭6〇所吐出之液滴之液滴 速度分布’以虛線表示自先前之雙流體喷嘴所吐出之液滴 的液滴速度分布。自先前之雙流體噴嘴所吐出之液滴之液 滴速度具有非常廣之分布’相較於此，自本實施形態之清 洗頭60所吐出之液滴之液滴速度的分布極其窄。 如此，可將自本實施形態之清洗頭6〇所吐出之液滴之液 滴直徑及液滴速度之不均處在較小範圍内，其原因在於由 壓電元件6 2對高壓填充於筒狀體6丨内部之清洗液賦予振動 而自複數個吐出孔64吐出上述清洗液。即，於先前之雙流 體喷嘴中，係使加壓後之氣體與液體碰撞而生成液滴，因 此液滴係作為與氣體之多相流而排出，控制變得困難，且 液滴之液滴直徑及液滴速度亦分布較廣、不均較大，相對 於此，於本實施形態之清洗頭60中，係對加壓後之液體賦 予振動而自複數個吐出孔64吐出，因此僅液滴吐出，可使 液滴之液滴直徑及液滴速度之分布較窄且不均較小。 圖ό係表示所吐出之液滴之液滴直徑與對基板w造成之 損傷之相互關係的圖。如圖6所示，若液滴直經超過3〇 則會對基板W產生損傷，液滴直徑越大則造成之損傷亦越 大。由於自清洗頭60所吐出之清洗液之液滴之平均液滴直 146585.doc -20· 201104729 位為1 5 μπι以上且3 〇 μιη以下，因此可防止於清洗處理中對 基板W造成損傷。又，由於液滴直徑之不均極其小，以3 σ 計為2 μιη以下，因此無益於清洗之多餘液滴或如對基板w 造成損傷之有害液滴完全不存在。所以，可提高清洗效率 而又不會對基板W造成損傷。 又，圖7係表示所吐出之液滴之液滴速度與污染物質之 去除率之相互關係的圖。如圖7所示，所吐出之液滴之液 滴速度越大則污染物質之去除率亦越高。自本實施形態之 清洗頭60所吐出之清洗液之液滴之平均液滴速度為“米/ 秒以上且60米/秒以下’因此可獲得必要之去除性能。而 且，液滴速度之不均亦極其小，以3σ計為5米/秒以下，因 此無ϋ於清洗之多餘液滴基本上不存在。 又，於清洗頭60上設置有20個吐出孔64。於第丨實施形 態中，自20個吐出孔64朝向基板_吐出之清洗液之液滴 之總流量設為10毫升/分鐘以上。圖8係表示因所吐出之液 滴之液滴流量不同而引起之污染物質之去除率之差異的 圖。於圖8中’虛線表示幻毫升/分鐘之液滴流量而吐出 清洗液之液滴時之污染物質之去除率，實線表示以^毫升/ 分鐘之液滴流量而吐出清洗液之液滴時之污染物質的去除 率。液滴流量越大則清洗效率越高，當幻毫升/分鐘之液 滴流量而吐出清洗液之液滴時，需要300秒鐘來獲得充分 之去除率’而若以10毫升/分鐘之液滴流量吐出液滴，則 可以30秒鐘達到相^㈣。於“式之基板清洗裝置^ 中’每塊基板w之清洗處理所需之時間為3〇秒係大致妥當 146585.doc •21 · 201104729 者。 如上所述，當進行清洗處理時，係自清洗頭6〇將清洗液 之液滴朝向基板w吐出。自清洗頭60所吐出之液滴之平均 液滴直徑為15 μιη以上且30 μιη以下，且其分布以切計為二 μιη以下。又，所吐出之液滴之平均液滴速度為2〇米/秒以 上且60米/秒以下，且其分布以3σ計為5米/秒以下。進而， 所吐出之液滴之液滴流量為1 〇毫升/分鐘以上。若一邊滿 足該等吐出條件一邊自清洗頭6 〇將清洗液之液滴朝向基板 W吐出，則可提高清洗效率而又不會對基板w造成損傷， 且可於短時間内達成充分之污染物質之去除率。 又，於清洗處理中清洗頭60係於基板评之中心部上方與 立而緣郤上方之間重複擺動，遍及基板w之整個表面而均一 地進行清洗處理。再者，因離心力而自旋轉之基板w飛散 出之液體藉由排液導引槽3 1而被導入至排液空間22内，並 經由排液管27而排出。 經過特定之清洗處理時間之後，打開閥76，停止自清洗 頭60吐出液滴，並藉由噴嘴驅動部5〇將清洗頭6〇移動至避 讓位置為止。繼而，提高基板w之旋轉數而執行基板賈之 乾燥處理。於乾燥處理結束之後，停止基板w之旋轉，並 且使防濺罩30下降而自旋轉基座u上搬出處理後之基板 W。藉此，基板清洗裝置丨之一系列處理動作結束。再 者π洗及乾燥處理中之防濺罩3 0之位置，較好的是根據 清洗液之回收或排液之必要性而適當地變更。 以上’對本發明之第1實施形態進行了說明，但只要不 146585.doc • 22- 201104729 脫離本發明之主旨，除上述說明以外可進行各種各樣之變 更。例如，於第1實施形態之基板清洗裝置丨中，筒狀體61 内部之清洗液之液壓係設為10 MPa以下，但液壓並非限定 於此者。例如，若吐出孔64之直徑較上述實施形態更小， 則液壓必須設為更高之壓力。 又’於第1貫施形態之基板清洗裝置1中，當不進行清洗 處理時亦向清洗頭6〇供給清洗液，且該清洗液排出至裝置 外部，但亦可作為循環系統而構成。即，亦可經由過濾器 而將閥76之下游側之配管連接於清洗液供給源”上，而將 來自清洗頭60之清洗液回流至清洗液供給源71。 又’第1貫施形態之基板清洗裝置1係適於將半導體基板 作為基板W而進行清洗者，但本發明之清洗技術亦可適用 於其他種類之基板W之清洗。作為其他種類之基板w,可 列舉液晶顯示裝置用玻璃基板或碟等陶瓷板。 圖9係表不進行包含其他種類之基板w之清洗處理之基 板请洗裝置的圖。基板w藉由支持台lu而保持。作為清 洗頭之清洗頭60相對於經支持台u丨所保持之基板w而相 對性地移動。可藉由省略圖示之滑塊移動機構而使清洗頭 60移動至基板W之上方，亦可維持將清洗頭6〇固定之狀態 而驅動支持台111。又，亦可藉由手動而使清洗頭6〇移 動。 清洗頭60之構成與上述第i實施形態中說明之圖2、3所 不者相同。即，—邊向清洗頭60輸送清洗液一邊關閉閥76 而提咼筒狀體61之内部之清洗液之液壓，並且藉由壓電元 146585.doc -23- 201104729 件62對筒狀體61内部之清洗液賦予振動，則自2〇個吐出孔 64生成並吐出清洗液之液滴。附著於基板w上之污染物質 藉由自清洗頭60所吐出的液滴而物理地去除。 即便於清洗包含其他種類之基板界之情形時，控制部9〇 控制壓送泵72而調整筒狀體61内部之清洗液之液壓，並且 控制電源65而調整賦予給清洗液之振動，藉此規定自2〇個 吐出孔64所吐出之液滴之吐出條件。關於液滴直徑係將 自20個吐出孔64朝向基板W吐出之清洗液之液滴之平均液 滴直徑設為I5 μπι以上且200 μιη以下。與上述實施形態同 樣地，自清洗頭60所吐出之液滴之液滴直徑不會遍及15 μηι至200 μηι之範圍而較廣地分布，不均極其小。具體而 言，液滴直徑之分布以3σ(σ為標準偏差）計集中在平均液 滴直徑之10%以下。 圖10係表示清洗液之液滴直徑之分布之圖。分布DA之 液滴之平均液滴直徑比較小’適用於半導體基板之清洗。 另一方面，分布DB之液滴之平均液滴直徑比較大，適用 於陶瓷板之清洗。無關於平均液滴直徑，自清洗頭6〇所吐 出之液滴之液滴直徑之分布以3σ計為平均液滴直徑之1〇0/〇 以下之極其狹窄’基本上無不均。由此，無益於清洗之多 餘液滴或如對基板W造成損傷之有害液滴完全不存在。因 此，可提高清洗效率而又不會對基板W造成損傷。然而， 隨著平均液滴直徑不斷變大’不均逐漸變大，若平均液滴 直徑超過200 μιη，則難以使液滴直徑之分布以3〇計集中在 平均液滴直徑之10%以下。又，就清洗頭6〇之製作而言， 146585.doc -24· 201104729 若平均液滴直徑超過200 μιη則無法抑制不均，且不實用。 又，關於液滴速度’自20個吐出孔64朝向基板w所吐出 之清洗液之液滴之平均液滴速度設為20米/秒以上且1〇〇米/ 秒以下。與液滴直徑同樣地’自清洗頭6〇所吐出之液滴之 液滴速度不會遍及20米/秒至100米/秒之範圍而較廣地分 布，不均極其小。具體而言’液滴速度之分布以3 σ(σ為標 準偏差）計集中在平均液滴速度之10%以下。再者，向清洗 頭60供給之清洗液之液壓並不限定於1〇 Mpa以下，根據吐 出孔64之直徑等條件而需要更高液壓之供給。 圖11係表示清洗液之液滴速度之分布之圖。根據作為清 洗對象之基板W之種類不同，可使用如分布dc般平均液滴 速度比較小之液滴，亦可使用如分布DD般平均液滴速度 比較大之液滴。無關於平均液滴速度，自清洗頭6〇所吐出 之液滴之液滴速度之分布以3σ計為平均液滴速度之丨〇。/〇以 下之極其狹窄，基本上無不均。由此，無益於清洗之多餘 液滴亦基本上不存在。然而，隨著平均液滴速度不斷變 大，不均逐漸變大，若平均液滴速度超過i 〇〇米/秒則難以 使液滴速度之分布以3σ計集中在平均液滴速度之1〇%以 下。 又’關於液滴流量，係將自20個吐出孔64朝向基板W所 吐出之清洗液之液滴之總流量設為1〇毫升/分鐘以上。若 一邊對應於基板W之種類而滿足該等吐出條件一邊自清洗 頭60將清洗液之液滴朝向基板w吐出，則無益於清洗之多 餘液滴或如對基板W造成損傷之有害液滴完全不存在，可 146585.doc -25- 201104729 提高清洗效率而又不會對基板w造成損傷’且可於短時間 内達成充分之污染物質之去除率。 又，於第1實施形態中，係於上述吐出條件下自吐出清 洗液之液滴，但清洗頭60之形態並不限定於此。圖12係表 示清洗頭之其他例之圖。 圖12之清洗頭160係於四角稜柱形狀之筒狀體i6i上貼設 壓電元件162而構成。筒狀體161具有四角稜柱形狀之外 形，且於其内側形成有四角稜柱形狀之中空空間。筒狀體 161之中空空間之兩端形成開口，與上述第丨實施形態同樣 地，其一端連接於供給配管70上，並且另一端連接於排出 配管75上（參照圖2)。筒狀體161由石英或氧化锆等之陶瓷 形成即可。 於筒狀體161之其中一側壁面上穿設有複數個（例如2〇 個）吐出孔164。20個吐出孔164係沿筒狀體161之長度方向 而排列成一行。複數個吐出孔164之大小及排列間距與上 述第1實施形態之複數個吐出孔64相同。設置有複數個吐 出孔164之側壁面之寬度為1 〇 mm。又，於筒狀體Μ〗之另 一側壁（與設置有複數個吐出孔164之側壁相對向之側壁）之 外壁面上貼設有壓電元件丨62 ^壓電元件162與電源65電性 連接。電源65將特定頻率之交流電壓施加於壓電元件162 上。 具備清洗頭160之基板清洗裝置之全體構成及清洗頭16〇 周邊構成與第1實施形態相同。向清洗頭160中連續地持續 供給清洗液，並進行清洗處理時’關閉閥76，藉此自複數 146585.doc -26· 201104729 個吐出孔164吐出清洗液。χ，當進行清洗處理時，藉由 壓電元件162而對筒狀體161之内部之清洗液賦予振動：， 此，與第1實施形態同樣地，自複數個吐出孔164生成並: 出清洗液之液滴。 又’清洗頭亦可為如圖13所示者。圖13之清洗頭⑽具 備夕角稜柱形狀之筒狀體26卜筒狀體261具有多角稜柱形 狀之外形’且於其内側形成有多角棱柱形狀之中空空間： 筒狀體261之中空空間之兩端形成開口’與上述第丄實施形 態同樣地，其-端連接於供給配管7〇上，另一端連接於排 出配管75上（參照圖2)β筒狀體261由石英或氧化錯等之陶 瓷形成即可。 於筒狀體261之其中一側壁面上穿設有成一行之複數個 (例如20個）吐出孔264。複數個吐出孔264之大小及排列間 距與上述第1實施形態之複數個吐出孔64相同。又，於與 設置有複數個吐出孔264之側壁相對向之側壁之外壁面I 貼設有壓電元件262。壓電元件262與電源65電性連接。 具備清洗頭260之基板清洗裝置之全體構成及清洗頭26〇 周邊構成與第1實施形態相同。向清洗頭26〇連續地持續供 給清洗液，而進行清洗處理時，關閉閥76，藉此自複數個 吐出孔264吐出清洗液。又，當進行清洗處理時，藉由壓 電元件262而對筒狀體261之内部之清洗液賦予振動。藉 此，與第1實施形態同樣地，自複數個吐出孔264生成並: 出清洗液之液滴。 又，清洗頭亦可為如圖14所示者。圖14(a)係清洗頭36〇 146585.doc •27- 201104729 之縱剖面圖，圖M(b)係清洗頭360之橫剖面圖。圖14之清 洗頭360具備長方體形狀之筒狀體361。筒狀體361之内側 空間藉由複數個間隔板365而被劃分成複數個區塊。再 者，間隔板365並非將複數個區塊完全地間隔，複數個區 塊彼此相連通。 於琦狀體361上形成有導入口 366及吐出口 367。導入口 366及吐出口 367係與筒狀體361之内部空間連通。導入口 3 66連接於供給配管70上，並且吐出口 367連接於排出配管 75上。筒狀體361亦由石英或氧化錘等之陶瓷形成即可。 於藉由複數個間隔板3 6 5而被劃分之複數個區塊之各個 上穿设有吐出孔3 64。於清洗頭360上亦穿設有排成一行之 複數個吐出孔364，各吐出孔364之大小及排列間距與上述 第1貫施形態之複數個吐出孔6 4相同。又，於筒狀體3 61之 兩側壁之外表面上貼設有壓電元件362。壓電元件362與電 源65電性連接。 具備清洗頭360之基板清洗裝置之全體構成及清洗頭36〇 之周邊構成與第1實施形態相同。向清洗頭36〇連續地持續 供給清洗液，而進行清洗處理時，關閉閥76，藉此自複數 個吐出孔364吐出清洗液。又，當進行清洗處理時，藉由 壓電元件362而對筒狀體361之内部之清洗液賦予振動。藉 此，與第1實施形態同樣地，自複數個吐出孔364生成並吐 出清洗液之液滴。 即便於使用圖12所示之清洗頭160、圖13所示之清洗頭 260或圖14所示之清洗頭360而將清洗液之液滴朝向基板w 146583.doc -28· 201104729 吐出之情形時，液滴之吐出條件亦與上述相同。若一邊滿 足上述吐出條件一邊將清洗液之液滴朝向基板w吐出，則 與上述第1實施形態同樣地，無益於清洗之多餘液滴或如 對基板W造成損傷之有害液滴完全不存在，可提高清洗效 率而又不會對基板W造成損傷，且可於短時間内達成充分 之污染物質之去除率。 又，只要係可於上述吐出條件下吐出清洗液之液滴之清 洗頭，則亦可使用圖2、圖3、圖12〜圖14所示之形態以外 之清洗頭，將清洗液之液滴朝向基板w吐出。 又，清洗液並不限定於純水，亦可為清洗用之化學藥品 之水溶液。 又，基板清洗裝置1之全體構成並不限定於圖丨之形態， 例如亦可設置向清洗處理後之基板w噴出氮氣以使其乾燥 之氣體喷嘴。 <第2實施形態> 圖15係表示第2實施形態之基板清洗裝置之圖。第2實施 形態之基板清洗裝置401係一塊一塊地清洗半導體之基板 w之葉片式之清洗裝置，其去除附著於圓形之矽之基板w 上之微粒等污染物質而進行清洗。基板清洗裝置4〇1之主 要構成包括旋轉保持部41 〇、處理杯420、防濺罩430、噴 嘎驅動部450、清洗頭460、防護淋洗喷嘴480、及控制部 490 〇 旋轉保持部410具備旋轉基座4U、旋轉軸413及馬達 414。旋轉基座411係具有略大於基板w之直徑之圓板狀構 146585.doc -29· 201104729 件於旋轉基座411之上表面周邊部，沿同一圓周上而豎 立设置有複數個（本實施形態中為6個）之支持銷412。各支 持銷412包括：圓筒狀之支持部，其自下方支持基板评之 下表面周邊部；及銷部，其突出設置於上述支持部之上表 面，與基板w之端緣部抵接並加以按壓。將6個支持銷412 中之3個作為固定設置於旋轉基座411上之固定支持銷。固 定支持銷於圓筒狀支持部之軸心上突出設置有銷部。另一 方面，將6個支持銷412中之剩餘的3個作為設置成相對於 旋轉基座411而旋轉（自轉）自如之可動支持銷。於可動支持 銷上，自圓筒狀支持部之軸心略微偏離而突出設置銷部。 3個可動支持銷藉由省略圖示之連桿機構及驅動機構連動 而旋動驅動。藉由可動支持銷旋動，可藉由6個銷部夾持 基板w之端緣部、且可解除基板w之夾持。利用6個支持銷 412而夾持基板w之端緣部，藉此可以水平姿勢保持基板 W，而不會使旋轉基座4 u接觸基板冒之下表面中央部。 旋轉軸413垂直設置於旋轉基座411之下表面側中心部。 方疋轉軸413經由驅動皮帶415而與馬達414之驅動滑輪416連 動連結。若馬達414使驅動滑輪416旋轉驅動，則驅動皮帶 415繞動，旋轉軸413旋轉。藉此，經旋轉基座411所保持 之基板W於水平面内沿鉛垂方向而在中心軸RX之周圍與旋 轉基座411及旋轉軸4 1 3 —併旋轉。 又，旋轉軸413之内側形成為中空，且於其中空部分沿 鉛垂方向而插入設置有處理液喷嘴418。處理液噴嘴418與 省略圖示之處理液供給源連通連接。處理液噴嘴418之前 146585.doc -30- 201104729 ^朝向經旋轉基座411所保持之基板w之下表面中心部而 開口。因此，可自處理液噴嘴418之前端向基板w之下表 面中心部供給處理液。 又，將旋轉軸413之内壁面與處理液喷嘴418之外壁面之 間之縫隙作為氣體供給流路，且與省略圖示之氣體供給源 連通連接。可自該縫隙之上端朝向經旋轉基座41丨所保持 之基板W之下表面供給氣體。 包圍旋轉保持部410而設置處理杯42〇。於處理杯42〇之 内側设置有圓筒狀之間隔壁421。又，以包圍旋轉保持部 41〇之周圍之方式，於間隔壁421之内側形成用以排出用於 基板w之清洗處理之清洗液之排液空間422。進而，以包 圍排液空間422之方式，於處理杯42〇之外壁與間隔壁42丄 之間形成用以回收用於基板w之清洗處理之清洗液之回收 空間423。 於排液空間422上連接有用以向排液處理裝置（省略圖 示）導入π洗液之排液管427，且於回收空間423上連接有 用以向回收處理裝置（省略圖示）導入清洗液之回收管Mg。 於處理杯420之上方設置有用以防止來自基板貿之清洗 液向外側飛散之防濺罩43G。肖防減罩㈣形成為相對於中 。軸RX而旋轉對稱之形狀。於防濺罩430之上端部之内表 面’ ％狀形成有剖面v字形狀之排液導引槽431。又，於防 濺罩430之下端部之内表面形成有包含向外側下方傾斜 之傾斜面之回收液導引部432。於回收液導引部Μ?之上端 附近，形成有用以收納處理杯420之間隔壁421之間隔壁收 146585.doc •31- 201104729 納槽433。 之護罩升降驅[Technical Field] The present invention relates to a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for a optical disk, a ceramic plate, and the like (hereinafter referred to as a single sheet) "Substrate" A substrate cleaning method and a substrate cleaning apparatus that discharge droplets of a cleaning liquid and perform cleaning. [Prior Art] Previously, in the manufacture of a semiconductor substrate or the like, the cleaning step of I in addition to the particles attached to the substrate was a necessary step. In the blade type cleaning apparatus which performs the cleaning step, a technique of cleaning the substrate by spraying fine droplets of a cleaning liquid such as pure water onto the substrate is used. For example, as disclosed in Patent Document 1, a two-fluid nozzle is widely used in which a cleaning liquid is mixed with a pressurized gas to generate a droplet, and a mixed fluid of the droplet and the gas is sprayed. To the substrate. Foreign matter such as particles attached to the substrate, buried by the main (four) wrong by the kinetic energy of the liquid droplets of the liquid and physically removed from the special offer 2 "has a kind of clear piezoelectric element to the ultrasonic band A. The collar half-heavy swells and expands and contracts, thereby accelerating the self-discharge outlet in a direction to accelerate the 杳 冼 之 liquid droplets to the substrate at a high speed. On the other hand, as a spouting droplet, you can use it. In the 'Technical Document 3', there is disclosed a droplet spraying device which generates a liquid droplet which is formed by vibrating a film having a reverse taper and a film is formed. Further, in the patent, there is no such thing as a patent. The inkjet printer is so shocking that it has a cut-out part. The ink is in addition to the cut-out part of the pipe: "The official road is filled with oil and ink vibration, thereby ejecting the ink liquid: the phase phase is adhered to the vibrator 146585.doc 201104729 Further, Patent Documents 5 and 6 disclose an ink jet method in which droplets of a fixed amount of cleaning liquid are discharged by a piezoelectric element or the like in the same manner as a print head of an ink jet printer. Cleaning nozzle. [Prior Art Document] [Patent Literature] [Patent Document 1] 曰本专利特开2007- Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 6] Japanese Patent Laid-Open Publication No. 2004-327487 [Draft of the Invention] [Problems to be Solved by the Invention] However, the case of using a two-fluid nozzle as disclosed in Patent Document 1 The velocity and size of the generated droplets (the diameter of the droplets) are distributed over a wide range. In the cleaning process of the semiconductor substrate, it is necessary to surely remove the particles without damaging the components on the substrate, but if the liquid When the speed and size of the droplets are distributed over a wide range, there are excess droplets which are not beneficial for removing the particles. On the other hand, there are also harmful droplets which cause damage to the components. As a result, there is an improvement in cleaning efficiency. It is suppressed and there is a possibility of component destruction. This problem also exists in the cleaning of other substrates. The result is a non-uniform cleaning. The present invention is in view of the above. The object of the present invention is to provide a substrate cleaning method and a substrate cleaning apparatus which are capable of knowing the cleaning efficiency of a substrate. 146585.doc • 4 - 201104729 Further, it is an object of the present invention to provide a cleaning time which can be used in a short period of time. A substrate cleaning method and a substrate cleaning apparatus for cleaning the entire surface of a substrate. [Technical Solution to Problem] In order to solve the above problems, the invention of claim 1 is a substrate cleaning method characterized in that it discharges a cleaning liquid to a substrate. Cleaning with a drop; cleaning with a mean droplet diameter of 1 5 μπ! or more and 200 μηι or less, and a distribution of droplet diameters of 10% or less of the above average droplet diameter by 3σ (σ is a standard deviation) The liquid droplets are discharged to the substrate. Further, the invention of claim 2 is the substrate cleaning method of the invention of claim 1, characterized in that the average droplet velocity is 2 〇m/sec or more and 1 〇〇m/sec or less, and the droplet velocity distribution The droplets concentrated on 10% or less of the above average droplet velocity are discharged to the substrate by 3σ (σ is a standard deviation). The invention of claim 3, wherein the liquid droplets are discharged to the substrate at a droplet flow rate of 1 〇 ml/min or more. Further, the invention of claim 4 is a substrate cleaning method characterized in that the cleaning liquid is discharged to the semiconductor substrate and the cleaning liquid is discharged; and the liquid droplet diameter is 15 μηι or more and 30 μπι or less, and the liquid is produced. The droplet diameter distribution is concentrated on the semiconductor substrate by droplets of the cleaning liquid of 2 μm or less in terms of 3 σ (σ is a standard deviation). Further, the invention of claim 5 is the substrate cleaning method of the invention of claim 4, characterized in that the average droplet velocity is 2 〇m/sec or more and 6 〇m/sec or less, and the droplet velocity distribution is 3σ (σ is a standard deviation), and droplets concentrated on 5 m/sec or less are discharged to the semiconductor substrate. In the substrate cleaning method of the invention of claim 4 or 5, the droplets are discharged to the semiconductor substrate at a droplet flow rate of 1 〇 ml/min or more. Further, the invention of the seventh aspect of the invention is a substrate cleaning method characterized in that the cleaning liquid is discharged to the substrate to be cleaned; and a plurality of spouts (10) are placed on the wall surface to be cleaned. And imparting vibration to the cleaning liquid, whereby the average droplet diameter is 415 μm or more and 200 μm or less, and the droplet diameter distribution is concentrated to 10% or less of the average droplet diameter by 3σ (σ is a standard deviation). The droplets of the cleaning liquid are discharged to the substrate from the plurality of ejection holes. Further, the invention of claim 8 is the substrate cleaning method according to the invention of claim 7, characterized in that the average droplet velocity is 2 nm/sec or more and 1 nm/sec or less, and the droplet velocity distribution The droplets which are concentrated on the 丨〇% or less of the above average droplet velocity by 3 σ (σ is a standard deviation) are discharged from the plurality of ejection holes to the substrate. Further, the invention of claim 9 is the substrate cleaning method of the invention of claim 7 or 8, characterized in that: the droplet of the cleaning liquid is discharged from the plurality of ejection holes to the substrate at a droplet flow rate of 丨〇ml/min or more Spit out. Further, the invention of claim 10 is a substrate cleaning method characterized in that a cleaning liquid is discharged to a semiconductor substrate to perform cleaning, and a cylindrical body is provided with a plurality of ejection holes on the wall surface for cleaning. Liquid, and impart vibration to the cleaning liquid, thereby concentrating the average droplets to a temperature of 丨5 μm or more and 30 μm or less, and the droplet diameter distribution is concentrated to 2 μηι or less by 3σ (σ is a standard deviation). The liquid droplets are discharged from the plurality of discharge holes to the semi-146585.doc 201104729 conductor substrate. Further, the invention of claim 11 is the substrate cleaning method of the invention of claim 10, characterized in that the average droplet length is 2 〇m/sec or more and 6 〇m/sec or less, and the droplet velocity distribution is The droplets concentrated at 5 m/sec or less in terms of 3σ (σ is a standard deviation) are discharged from the plurality of ejection holes to the semiconductor substrate. Further, the invention of claim 12 is the substrate cleaning method of the invention of claim 1 or 2, characterized in that: the droplets of the cleaning liquid are discharged from the plurality of droplets at a flow rate of 1 〇 ml/min or more The holes are discharged to the semiconductor substrate. Further, the invention of claim 13 is a substrate cleaning apparatus characterized in that it is a person who discharges a droplet of a cleaning liquid to a substrate and performs cleaning, and includes a cleaning nozzle which has a plurality of openings on the wall surface a cylindrical member for discharging a hole and a piezoelectric element attached to the wall surface, and vibrating the cleaning liquid transported to the cylindrical body from the piezoelectric element, thereby having an average droplet diameter of 15 μm or more and 200 or less Further, the droplets are distributed in a droplet of the cleaning liquid having a concentration of 3 σ% or less of the average droplet diameter by 3σ (σ is a standard deviation), and are discharged from the plurality of discharge holes to the substrate. Further, the invention of claim 14 is the substrate cleaning apparatus of the invention of claim 13 characterized in that the cleaning nozzle has an average droplet velocity of 2 〇m/sec or more and 1 〇〇m/sec or less, and the droplet The velocity distribution α3σ (σ is a standard deviation) is a droplet concentrated on the average droplet velocity of i 〇% or less, and is discharged from the plurality of discharge holes to the substrate. The invention of claim 15 is the substrate cleaning apparatus of the invention of claim 13 or 14, wherein the cleaning nozzle has a droplet flow rate of the cleaning liquid droplets of 1 〇 146585.doc 201104729 cc/min or more. The plurality of discharge holes are discharged from the plurality of discharge holes. Further, the invention of claim 16 is a substrate cleaning apparatus characterized in that it is a person who discharges a droplet of a cleaning liquid onto a semiconductor substrate and performs cleaning, and includes a cleaning nozzle having a plurality of holes mounted on the wall surface a cylindrical body for discharging the hole and a piezoelectric element attached to the wall surface, and vibrating the cleaning liquid transported to the cylindrical body from the piezoelectric element, thereby having an average droplet diameter of 15 μm or more The droplets of the cleaning liquid having a distribution of droplet diameters of 3 μm or less and having a concentration of 3 σ (the standard deviation of σ) of 2 μη or less are discharged from the plurality of ejection holes to the semiconductor substrate. Further, the invention of claim 17 is the substrate cleaning apparatus of the invention of claim 16 characterized in that the cleaning nozzle has an average droplet velocity of 2 nm/sec or more and 60 m/sec or less, and a droplet velocity The droplets which are concentrated at 5 m/sec or less in terms of 3σ (σ is a standard deviation) are discharged from the plurality of ejection holes to the semiconductor substrate. The invention of claim 18 is the substrate cleaning apparatus of the invention of claim 16 or 17, wherein the cleaning nozzle sprays the droplets of the cleaning liquid at a droplet flow rate of 1 〇 ml/min or more from the plurality of The discharge hole is discharged to the semiconductor substrate. Further, the invention of claim 19 is the substrate cleaning apparatus of the invention of claim 13 or 16, wherein the cylindrical body is a cylinder. Further, the invention of claim 20 is the substrate cleaning apparatus of the invention of claim 13 or 16, characterized in that it further comprises: a pressure feed pump that delivers the cleaning liquid from one end side opening of the cylindrical body; and a valve, It closes the other end side opening of the above-mentioned cylindrical body 146585.doc 201104729. Further, the invention of claim 21 is a substrate cleaning apparatus characterized in that a droplet of a cleaning liquid having a fixed diameter is continuously discharged to a substrate at a constant speed to perform cleaning, and includes a rotation holding mechanism that holds a liquid crystal forming mechanism that discharges a liquid onto a surface of the substrate held by the rotation holding mechanism to form a liquid film; and a cleaning head that has 60 or more and 300 or less discharge holes. Each of the droplets of the cleaning liquid having a fixed diameter is continuously discharged at a constant speed. The invention of claim 2 is the substrate cleaning apparatus according to the invention of claim 2, wherein the cleaning head has five or less rows of holes in which one or more discharge holes are arranged in a row. Further, the invention of claim 23 is the substrate cleaning apparatus of the invention of claim 22, wherein the cleaning head has four rows of holes in which one of the discharge holes is arranged in a row. The invention of claim 24 is the substrate cleaning apparatus according to the invention of claim 22, wherein the cleaning head has one row of holes in which the discharge holes are arranged in a row. A substrate cleaning apparatus according to any one of claims 2 to 24, characterized in that the opening hole of the discharge hole penetrating the cleaning head has a diameter of 15 μm and has a diameter The droplets of the cleaning liquid of 2 〇 μηη were continuously discharged from the discharge hole at a droplet speed of 40 m/s. Further, the invention of claim 26 is a substrate cleaning method characterized in that a droplet of a cleaning liquid having a fixed diameter is continuously discharged to a substrate at a constant speed to perform cleaning, and includes a liquid film forming step, Rotating 146585.doc 201104729 on the surface of the substrate to discharge liquid to form a liquid film; and the droplet discharge step, cleaning the fixed diameter from each of the 60 or more and 3 or less discharge holes which are provided in the cleaning head The liquid droplets are continuously discharged at a constant speed. The invention of claim 27 is the substrate cleaning method according to the invention of claim 26, wherein the cleaning head has five or less rows of holes in which one or more discharge holes are arranged in a row. The invention of claim 27 is the substrate cleaning method according to the invention of claim 27, wherein the cleaning head has four rows of holes in which the discharge holes are arranged in a row. The invention of claim 29 is the substrate cleaning method according to the invention of claim 27, wherein one of the rows of the plurality of discharge holes is arranged in a row on the cleaning head. Further, the invention of claim 30 is the substrate cleaning method according to any one of claims 26 to 29, characterized in that the droplets of the cleaning liquid having a diameter of 20 μm are applied to each of the discharge holes at 40 m/s. The droplet velocity is continuously ejected. [Effects of the Invention] According to the inventions of claims 1 to 3, 7 to 9, and 13 to 15, the average droplet diameter is 15 μm or more and 200 μm or less, and the droplet diameter distribution is concentrated by 3 σ. The droplets of the cleaning liquid which are 10% or less of the average droplet diameter are discharged to the substrate, so that there are fewer unnecessary droplets which are not preferable for cleaning, and the cleaning efficiency of the substrate can be improved. In particular, according to the inventions of claims 2, 8, and 14, the average droplet velocity is 20 m/sec or more and 1 nm/sec or less, and the droplet velocity distribution is concentrated at 10 σ in the average droplet velocity. The droplets below % are discharged to the substrate 'so 146585.doc •10-201104729 to obtain sufficient cleaning efficiency. In particular, according to the inventions of claims 3, 9, and 15, the droplets are discharged to the substrate at a droplet flow rate of 1 〇 ml/min or more, so that sufficient cleaning can be performed in a short time. Further, according to the inventions of claims 4 to 6, 10 to 12, and 16 to 18, the average droplet diameter is 15 μm or more and 30 μm or less, and the droplet diameter distribution is concentrated to 2 μm or less in terms of 3 σ. Since the droplets of the cleaning liquid are discharged to the semiconductor substrate, the unnecessary droplets for cleaning or the number of droplets that damage the semiconductor substrate are less, which improves the cleaning efficiency of the substrate. In particular, according to the inventions of claims 5, 11, and 17, the liquid having an average droplet velocity of 20 m/sec or more and 60 m/sec or less and having a droplet velocity distribution of 3 m/sec or less is concentrated at 5 m/sec or less. The droplets are discharged to the semiconductor substrate, so that sufficient cleaning efficiency can be obtained. In particular, according to the invention of claims 6, 2, and 18, the droplets are discharged to the semiconductor substrate at a flow rate of droplets of 1 〇 ml/min or more, so that sufficient cleaning can be performed in a short period of time. According to the invention of claim 21 to claim 25, the cleaning head is provided with 6 or more and 300 or less discharge holes for continuously discharging the droplets of the cleaning liquid having a fixed diameter at a constant speed. The entire surface of the substrate is currently cleaned for a relatively short cleaning time. In particular, according to the invention of claim 22, five or less rows of holes are formed in which one or more discharge holes are arranged in a row on the cleaning head, so that a liquid film can be formed at a position corresponding to all the discharge holes. Further, according to the invention of the claim 2-6 to the singer claim 30, the cleaning liquid having a fixed diameter is fixed from each of the 60 or more and 300 or less discharge holes which are provided in the cleaning head 146585.doc • 11 · 201104729 The droplets are continuously ejected at a fixed rate, so that the entire surface of the substrate can be cleaned in a relatively short cleaning time currently allowed. In particular, according to the invention of claim 27, five or less rows of holes having six or more discharge holes are arranged in a row on the cleaning head, so that a liquid film can be formed at a position corresponding to all the discharge holes. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. <First Embodiment> Fig. 1 is a view showing a substrate cleaning apparatus according to a preferred embodiment of the present invention for cleaning a semiconductor substrate. The substrate cleaning apparatus is a blade type cleaning device for cleaning a semiconductor substrate W one by one, which removes and cleans contaminants such as fine particles adhering to the circular substrate W. The main components of the substrate cleaning device 1 include a rotation holding portion 10, a processing cup 20, a splash guard 30, a nozzle driving portion 5, a cleaning head 6, and a control portion 9. The rotation holding unit 10 includes a rotating base 11 , a rotating shaft 3 , and a motor 14 . The rotary base 11 has a disk-shaped member slightly larger than the diameter of the substrate W. A plurality of (six in the present embodiment) support pins 12 are erected on the same circumference of the upper surface peripheral portion of the spin base 11 . Each of the support pins 12 includes a cylindrical support portion from below. The peripheral portion of the lower surface of the substrate W is supported; and the pin portion 'is protruded from the upper surface of the support portion and abuts against the edge portion of the substrate and is pressed. Three of the six support pins 12 are fixed support pins that are fixed to the spin base 11. The fixing support pin is provided in a cylindrical shape. 146585.doc -12- 201104729 The pin portion of the support portion is protruded. On the other hand, the remaining three of the six support pins 12 are provided as movable support pins that are rotatably (rotated) with respect to the spin base 丨. On the movable support pin, the pin portion is protruded slightly from the axis of the cylindrical support portion. The three movable support pins are rotationally driven by interlocking the link mechanism and the drive mechanism (not shown). By the rotation of the movable support pin, the end portions of the substrate w can be lost by the six pin portions, and the sandwiching of the substrate w can be released. The end pins of the substrate W are held by the six support pins 2, whereby the substrate 丨丨 can be held in the horizontal posture ′ without contacting the central portion of the lower surface of the substrate W. The rotating shaft 13 is vertically disposed at a central portion on the lower surface side of the spin base 11. The rotary shaft 13 is coupled to the drive pulley 16 of the motor 14 via a drive belt 15. When the motor 14 rotationally drives the drive pulley 16, the drive belt 丨 5 is rotated and the rotary shaft 13 is rotated. Thereby, the substrate w held by the rotating base u is rotated in the horizontal plane around the central axis RX in the vertical direction with the spin base 11 and the rotating shaft 13. Further, the inner side of the rotating shaft 13 is hollow, and the processing liquid nozzle 18 is inserted in the vertical direction in the hollow portion thereof. The treatment liquid nozzle 18 is connected in communication with a treatment liquid supply source (not shown). The front end of the treatment liquid nozzle 18 is opened toward the central portion of the lower surface of the substrate W held by the rotary base 11. Therefore, the treatment liquid can be supplied from the front end of the treatment liquid nozzle 18 to the center portion of the lower surface of the substrate w. Further, a gap between the inner wall surface of the rotary shaft 13 and the outer wall surface of the processing liquid nozzle 18 is used as a gas supply flow path, and is connected to a gas supply source (not shown). Gas may be supplied from the upper end of the slit toward the surface of the base 146585.doc 13 201104729 plate w held by the rotating base. The processing cup 20 is provided surrounding the rotation holding portion 10. A circle is disposed inside the processing cup 20. A tubular partition wall 21. Further, a liquid discharge space 22 is formed inside the partition wall 21 so as to surround the periphery of the rotation holding portion 10, for discharging the cleaning liquid for the cleaning process of the substrate W. In the manner of the liquid discharge space 22, a recovery space 23' is formed between the outer wall of the processing cup 2 and the partition wall for recovering the cleaning liquid for the cleaning process of the substrate. The liquid discharge space 22 is connected to be used for cleaning. The liquid discharge pipe 27 of the liquid-guided liquid discharge processing apparatus (not shown) is connected to the recovery space 23 to be connected to the recovery pipe 28 for guiding the cleaning liquid to the recovery processing device (not shown). Above the processing cup 20, A splash guard 30 is provided to prevent the cleaning liquid from being scattered outward from the substrate w. The splash mask 3 is formed in a shape that is rotationally symmetrical with respect to the central axis RX. The inner surface of the upper end portion of the splash guard 3〇 on' A liquid discharge guide groove 3 is formed in a V-shaped cross section. Further, on the inner surface of the lower portion of the cover 30, a liquid recovery guide portion including an inclined surface inclined downward toward the outer side is formed. 32. A partition wall receiving groove 33 for accommodating the partition wall 21 of the processing cup 2 is formed in the vicinity of the upper end of the recovery liquid guiding portion 32. The splash cover 30 is lifted and lowered by a shield constituted by a ball screw mechanism or the like. The driving mechanism 35 is driven up and down in the vertical direction. The shroud lifting and lowering drive mechanism 35 causes the splash guard 30 to surround the recovery liquid guiding portion 32 at the recovery position of the edge portion of the substrate W held by the rotating base 12, and The drain guiding groove 3 丨 surrounds and elevates between the discharge positions of the edge portions of the substrate w held by the rotary base 11. When the splash cover 30 is located at the recovery position (the position shown in FIG. 1), The end of the substrate boundary 146585.doc 14 201104729 The cleaning liquid at the edge is introduced into the recovery space 23' by the recovery liquid guiding portion 32 and is recovered via the recovery pipe 28. On the other hand, when the splash cover 3〇 When in the liquid discharge position, the cleaning liquid scattered from the edge of the substrate W is arranged by the row The guide groove 31 is introduced into the liquid discharge space 22, and is discharged through the liquid discharge pipe 27. Thus, the liquid discharge and recovery of the switchable cleaning liquid are performed, and the substrate W is delivered to the spin base. In the case of η, the shroud lift drive mechanism 35 lowers the splash guard 30 to the oscillating position of the spin base 更 which is more prominent than the upper end of the splash guard 3 。. The nozzle drive unit 50 includes the lift motor 51 and the swing motor 53. The nozzle arm 58. The cleaning head 6 is attached to the front end of the nozzle arm 58. The base end side of the nozzle arm 58 is coupled to the motor shaft 53a of the swing motor 53. The swing motor 53 causes the cleaning head 60 to have the motor shaft 53a as the motor shaft 53a. The center rotates in the horizontal plane. The swing motor 53 is attached to the lift base 54. The lift base 54 is screwed to the ball screw 52 directly connected to the motor shaft of the fixedly disposed lift motor 51, and is slidably attached to the guide member 55. When the lift motor 51 rotates the ball screw 52, the cleaning head 60 is lifted together with the lift base 54. The elevating motor 51 and the oscillating motor 53 of the nozzle driving unit 50 move the cleaning head 60 between the escaping position outside the tamper-proof cover 30 and the cleaning position above the rotator pedestal. Further, the cleaning head 6 is placed above the spin base , and is swung between the upper portion of the center portion of the substrate w and the upper portion of the edge portion by the oscillating motor 53. Further, the control unit 90 controls various operation mechanisms provided on the substrate cleaning apparatus 1. The hardware of the control unit 9 is the same as that of a normal computer. In other words, the control unit 90 includes a CPU (central 146585.doc -15·201104729 processing unit) that performs various types of arithmetic processing, and a ROM (read only memory) that is a memory for reading the basic memory program. ), memory that reads and writes various kinds of information, that is, RAM (Random-access memory 'random access memory) and memory control software or data. Fig. 2 is a view showing a schematic configuration of a cleaning head 60 according to the first embodiment. 3 is a perspective view of the cleaning head 60. The cleaning head 60 is configured such that a piezo element 62 is attached to the cylindrical body 61 of the cylinder. The cleaning head 60 is attached to the front end of the nozzle arm 58 via a resin holder 63. Further, the holder 63 is omitted in FIG. A hollow space is formed inside the cylindrical cylindrical body 61, and openings are formed at both ends thereof. In the present embodiment, the tubular body 61 is formed of quartz and has a length in the longitudinal direction of 5 mm. Further, the cylindrical body 61 may be formed of a ceramic such as oxidized (Zr〇2). A plurality of (two in the first embodiment) discharge holes 64 are bored in the wall surface of the cylindrical body 61. The two discharge holes 64 are arranged in a line along the longitudinal direction of the tubular body 61. Each of the discharge holes 64 is formed in a substantially circular cylindrical shape penetrating the side wall of the tubular body 61. The 20 discharge holes 64 have a uniform diameter and are in the range of 7 μηι or more and 12 μηι or less. The arrangement pitch of the 20 discharge holes 64 (the distance between the adjacent discharge holes 64) is 1 mm. Further, a piezoelectric element 62 is attached to a wall surface of the cylindrical body 61 and a plurality of discharge holes on the outer wall surface facing the portion. The piezoelectric element 62 is electrically connected to a power source 65 having a high frequency generator. The power source 65 applies an alternating voltage of a specific frequency to the piezoelectric element 62. One end side opening of the inner space of the cylindrical body 61 is connected in communication with the 146585.doc 201104729 cleaning liquid supply source 71 via the supply pipe 7''. A pressure feed pump 72 and a filter 73 are inserted in the middle of the path of the supply pipe 70. The pressure feed pump 72 pressurizes the cleaning liquid (pure water in the present embodiment) from the cleaning liquid supply source 71 toward the cleaning head 60. The filter 73 removes foreign matter contained in the cleaning liquid supplied from the cleaning liquid supply source 71. On the other hand, a discharge pipe 75 is connected to the other end side opening of the inner space of the cylindrical body 61. A valve % is inserted in the middle of the path of the discharge pipe 75. When the valve 76 is opened by supplying the cleaning liquid from the supply pipe 7〇 in the inner space of the cylindrical body 61, the discharge pipe 75 discharges the cleaning liquid to the outside of the apparatus. The processing operation of the substrate cleaning apparatus 1 having the above configuration will be described. The processing operation described below is performed by the control unit 9 executing a specific cleaning processing software to control each mechanism of the substrate cleaning apparatus 。. First, the substrate W is delivered to the spin base n in a state where the splash cover 30 is lowered and the spin base 突出 protrudes upward from the splash guard 3 。. Then, the splash cover 30 is raised to the above-described liquid discharge position, and the nozzle drive unit moves the cleaning head 60 to the cleaning position above the substrate W held by the spin base 11. At the cleaning position, the plurality of discharge holes of the cleaning head 6 are set to be 5 mm or more and 25 mm or less from the substrate W. When P is not used for cleaning, the cleaning liquid is continuously supplied from the waste to the cleaning head. When the cleaning process is not performed, the valve 76 is opened, and the cleaning liquid supplied to the inside of the cylindrical body 61 is directly discharged from the discharge pipe 75 to the outside of the apparatus. When the cleaning head 6g is in standby position at the outer side of the outer side of the anti-feeding material, and when moving from the avoiding position to the cleaning position above the substrate W, 'the cleaning liquid is continuously supplied to the cleaning head 6〇, and the washing liquid continues. 146585.doc 201104729 Discharge to the outside of the unit. Next, the rotation of the substrate W is started by the rotation holding portion 10, and the liquid droplets of the cleaning liquid are discharged from the cleaning head 60 toward the upper surface of the substrate W. At this time, the cleaning liquid can be discharged from the processing liquid nozzle 18 toward the lower surface of the substrate W. Further, the cleaning operation is continued by the nozzle driving unit 50 so that the cleaning head 6 is swung between the upper portion of the center portion of the substrate w and the upper portion of the edge portion. When the cleaning process is performed, the valve 76 is closed while the cleaning liquid is being supplied to the cleaning head 60. Therefore, the hydraulic pressure of the cleaning liquid inside the cylindrical body 61 rises, and thereby the cleaning liquid is discharged from the 20 discharge holes 64. In the present embodiment, the hydraulic pressure of the cleaning liquid inside the cylindrical body 61 is 10 MPa or less. Further, when the cleaning process is performed, the power source 65 applies an alternating voltage of a specific frequency to the piezoelectric element 62. Thereby, the piezoelectric element 62 repeats expansion and contraction, and imparts vibration of a specific frequency to the cleaning liquid inside the odd body 61. When the hydraulic pressure of the cleaning liquid inside the cylindrical body 61 is increased and vibration is applied to the cleaning liquid, the cleaning liquid flowing out from the 20 discharge holes 64 due to the hydraulic pressure is dispersed and separated by vibration, and the cleaning liquid is generated and discharged. Droplets. Here, the flow of the liquid flowing out from the discharge port 64 is separated to form a droplet by the following process. The cleaning liquid is supplied to the cylindrical body 61 at a constant pressure or a small range of pressure (D.C (direct current).pressure, DC pressure). The discharge port 64 flows out of the cleaning liquid at substantially the same discharge rate from the two discharge holes 64 by the above pressure. When the fixed voltage of the specific frequency is applied to the piezoelectric element in this state, the liquid flow is dispersed and separated by the generated vibration to form droplets. Here, the supply pressure of the cleaning liquid is supplied by the pressure feed pump 72. The frequency of the alternating current applied to the piezoelectric element 62 is a value other than the normal operating range of the continuous ink jet apparatus described in the prior art of 146585. doc -18 201104429. The particles adhered to the substrate w are contaminated. The substance is physically removed by the kinetic energy of the liquid droplets discharged from the cleaning head 6. Here, the control unit 90 controls the pressure feed pump 72 to adjust the hydraulic pressure of the cleaning liquid inside the cylindrical body 61, and controls the power source 65. By adjusting the vibration applied to the cleaning liquid, the discharge condition (parameter) of the liquid discharged from the 20 discharges 64 can be specified. In addition to these, the diameter and the number of the discharge holes 64 are also the discharge conditions of the liquid droplets. In the present embodiment, the average droplet diameter of the droplets of the cleaning liquid which is ejected from the 20 discharge holes 64 toward the substrate is 15 μΓη or more and 3 μpm or less. Here, the important point is: self-cleaning Head 60 The droplet diameter of the droplets is not widely distributed in the range of 15 μπι to 30 μπι, and the unevenness is extremely small. Specifically, the droplet diameter distribution is 2 μηι in terms of 3σ (σ standard deviation). Fig. 4 is a view showing the distribution of the droplet diameter of the cleaning liquid. In Fig. *, the droplet diameter distribution of the droplets ejected from the cleaning head 60 of the present embodiment is indicated by a solid line, and is indicated by a broken line from the previous The droplet diameter distribution of the droplets ejected by the two-fluid nozzle. The droplet diameter of the droplets ejected from the previous two-fluid nozzle has a wide distribution, including droplets having a droplet diameter of 15 μmΐ3〇, but A large number of droplets having a droplet diameter outside the range are also contained. In contrast, the droplet diameter of the droplets ejected from the cleaning head 60 of the present embodiment is extremely narrow, and there is substantially no unevenness. In the present embodiment, the average droplet velocity of the liquid droplets of the cleaning liquid which is ejected from the 20 discharge holes 64 toward the substrate is 2 nm/sec or more and 6 nm/146585.doc -19-201104729 seconds or less. The diameter of the droplet is similarly 'self-cleaning head 60 The droplet velocity of the ejected droplets does not spread over a range of 20 m/s to 60 m/s and is widely distributed. The unevenness is extremely small. Specifically, the distribution of the droplet velocity is 5 m in 3σ/ Fig. 5 is a view showing the distribution of the droplet velocity of the cleaning liquid. In Fig. 5, the droplet velocity distribution of the droplets ejected from the cleaning head 6〇 of the present embodiment is also indicated by a broken line. Indicates the droplet velocity distribution of the droplets ejected from the previous two-fluid nozzle. The droplet velocity of the droplets ejected from the previous two-fluid nozzle has a very wide distribution', compared to the cleaning of this embodiment The distribution of the droplet velocity of the liquid droplets discharged from the head 60 is extremely narrow. Thus, the unevenness of the droplet diameter and the droplet velocity of the liquid droplets discharged from the cleaning head 6〇 of the present embodiment can be made in a small range. The reason for this is that the cleaning liquid is discharged from the plurality of discharge holes 64 by the piezoelectric element 62 to vibrate the cleaning liquid filled in the inside of the cylindrical body 6丨. That is, in the conventional two-fluid nozzle, the pressurized gas collides with the liquid to generate droplets, so that the droplets are discharged as a multiphase flow with the gas, and control becomes difficult, and droplets of the droplets are formed. The diameter and the droplet velocity are also widely distributed and the unevenness is large. On the other hand, in the cleaning head 60 of the present embodiment, the pressurized liquid is vibrated and discharged from the plurality of discharge holes 64, so that only the liquid The droplets are discharged, so that the droplet diameter and the droplet velocity distribution of the droplets are narrow and uneven. The figure is a graph showing the relationship between the droplet diameter of the discharged droplets and the damage caused to the substrate w. As shown in Fig. 6, if the droplet passes straight more than 3 则会, the substrate W is damaged, and the larger the droplet diameter, the greater the damage. Since the average droplet of the cleaning liquid discharged from the cleaning head 60 is 146585.doc -20·201104729, the position is 1 5 μπι or more and 3 〇 μηη or less, thereby preventing damage to the substrate W during the cleaning process. Further, since the unevenness of the droplet diameter is extremely small, 2 μm or less in terms of 3 σ, the unnecessary droplets which are not good for cleaning or the harmful droplets which cause damage to the substrate w are completely absent. Therefore, the cleaning efficiency can be improved without causing damage to the substrate W. Further, Fig. 7 is a view showing the relationship between the droplet velocity of the discharged droplets and the removal rate of the contaminant. As shown in Fig. 7, the higher the droplet velocity of the discharged droplets, the higher the removal rate of the pollutants. The average droplet velocity of the liquid droplets of the cleaning liquid discharged from the cleaning head 60 of the present embodiment is "m/s or more and 60 m/sec or less", so that the necessary removal performance can be obtained. Moreover, the unevenness of the droplet speed is obtained. It is also extremely small, and is 5 m/sec or less in terms of 3 σ. Therefore, the excess droplets which are not cleaned are substantially absent. Further, 20 cleaning holes 64 are provided in the cleaning head 60. In the third embodiment, The total flow rate of the liquid droplets of the cleaning liquid from the 20 discharge holes 64 toward the substrate_ is set to 10 ml/min or more. Fig. 8 shows the removal rate of the contaminant due to the difference in the droplet flow rate of the discharged liquid droplets. In Fig. 8, the dotted line indicates the removal rate of the pollutants when the droplets of the cleaning liquid are ejected, and the solid line indicates the discharge rate of the droplets at a flow rate of 2 ml/min. The removal rate of the pollutants in the liquid droplets. The larger the droplet flow rate, the higher the cleaning efficiency. When the droplet flow rate of the droplets per minute is discharged, it takes 300 seconds to obtain sufficient removal. Rate 'and if 10 ml / min When the flow rate is discharged, the liquid phase can be reached in 30 seconds. In the "substrate cleaning device ^", the time required for the cleaning process of each substrate w is 3 sec. 146585.doc • 21 · 201104729 By. As described above, when the cleaning process is performed, the liquid droplets of the cleaning liquid are discharged from the cleaning head 6 toward the substrate w. The droplets discharged from the cleaning head 60 have an average droplet diameter of 15 μm or more and 30 μm or less, and the distribution thereof is not less than 2 μm. Further, the average droplet velocity of the discharged droplets is 2 〇m/sec or more and 60 m/sec or less, and the distribution thereof is 5 m/sec or less in terms of 3 σ. Further, the droplet flow rate of the discharged liquid droplets is 1 〇 ml/min or more. When the discharge head 6 〇 discharges the droplets of the cleaning liquid toward the substrate W while satisfying the discharge conditions, the cleaning efficiency can be improved without causing damage to the substrate w, and a sufficient pollutant can be obtained in a short time. The removal rate. Further, in the cleaning process, the cleaning head 60 is repeatedly oscillated between the upper portion of the substrate and the upper portion of the substrate, and is uniformly washed over the entire surface of the substrate w. Further, the liquid which is scattered by the substrate w which is rotated by the centrifugal force is introduced into the liquid discharge space 22 by the liquid discharge guiding groove 31, and is discharged through the liquid discharge pipe 27. After a specific cleaning treatment time, the valve 76 is opened to stop the discharge of the liquid droplets from the cleaning head 60, and the cleaning head 6 is moved to the escape position by the nozzle driving unit 5?. Then, the number of rotations of the substrate w is increased to perform the drying process of the substrate. After the drying process is completed, the rotation of the substrate w is stopped, and the splash cover 30 is lowered to carry out the processed substrate W from the spin base u. Thereby, one series of processing operations of the substrate cleaning device 结束 is completed. Further, the position of the splash cover 30 in the π washing and drying treatment is preferably changed as appropriate depending on the necessity of recovery or discharge of the cleaning liquid. The first embodiment of the present invention has been described above. However, various changes can be made in addition to the above description as long as the scope of the present invention is not exceeded by 146585.doc. 22-201104729. For example, in the substrate cleaning apparatus 第 of the first embodiment, the hydraulic pressure of the cleaning liquid inside the cylindrical body 61 is 10 MPa or less, but the hydraulic pressure is not limited thereto. For example, if the diameter of the discharge hole 64 is smaller than that of the above embodiment, the hydraulic pressure must be set to a higher pressure. Further, in the substrate cleaning apparatus 1 of the first embodiment, the cleaning liquid is supplied to the cleaning head 6A when the cleaning process is not performed, and the cleaning liquid is discharged to the outside of the apparatus, but may be configured as a circulation system. In other words, the piping on the downstream side of the valve 76 can be connected to the cleaning liquid supply source via the filter, and the cleaning liquid from the cleaning head 60 can be returned to the cleaning liquid supply source 71. Further, the first embodiment can be used. The substrate cleaning apparatus 1 is suitable for cleaning a semiconductor substrate as the substrate W. However, the cleaning technique of the present invention can also be applied to cleaning of other types of substrates W. Examples of other types of substrates w include glass for liquid crystal display devices. A ceramic plate such as a substrate or a disk. Fig. 9 is a view showing a substrate cleaning device that does not perform cleaning processing of another type of substrate w. The substrate w is held by a support table lu. The cleaning head 60 as a cleaning head is opposed to the The substrate w held by the support unit is moved relative to each other. The slider moving mechanism (not shown) moves the cleaning head 60 above the substrate W, and the cleaning head 6 is fixed. The support table 111 is driven. Further, the cleaning head 6 can be moved by hand. The configuration of the cleaning head 60 is the same as that of Figs. 2 and 3 described in the above-described first embodiment. 60 delivery clear The liquid lifts the valve 76 to lift the hydraulic pressure of the cleaning liquid inside the cylindrical body 61, and imparts vibration to the cleaning liquid inside the cylindrical body 61 by the piezoelectric element 146585.doc -23- 201104729 member 62. The droplets of the cleaning liquid are generated and discharged by the ejection holes 64. The contaminants adhering to the substrate w are physically removed by the droplets ejected from the cleaning head 60. That is, when it is easy to clean the substrate including other types of substrates The control unit 9 controls the pressure feed pump 72 to adjust the hydraulic pressure of the cleaning liquid inside the cylindrical body 61, and controls the power source 65 to adjust the vibration applied to the cleaning liquid, thereby defining the liquid discharged from the two discharge holes 64. In the droplet diameter, the average droplet diameter of the droplets of the cleaning liquid discharged from the 20 discharge holes 64 toward the substrate W is set to be I5 μπι or more and 200 μηη or less. Similarly to the above embodiment, The droplet diameter of the liquid droplets discharged from the cleaning head 60 is not widely distributed in the range of 15 μη to 200 μηι, and the unevenness is extremely small. Specifically, the droplet diameter distribution is 3σ (σ is a standard deviation). Concentrated in the average liquid Fig. 10 is a diagram showing the distribution of the droplet diameter of the cleaning liquid. The average droplet diameter of the droplets of the distribution DA is relatively small, which is suitable for the cleaning of the semiconductor substrate. On the other hand, the liquid of the distribution DB The average droplet diameter of the droplet is relatively large, which is suitable for the cleaning of the ceramic plate. Regardless of the average droplet diameter, the droplet diameter distribution of the droplets ejected from the cleaning head 6〇 is 1 平均 of the average droplet diameter in terms of 3σ. 0/〇 extremely narrow below 'substantially no unevenness. Therefore, unnecessary droplets which are not beneficial for cleaning or harmful droplets such as damage to the substrate W are completely absent. Therefore, the cleaning efficiency can be improved without being The substrate W causes damage. However, as the average droplet diameter becomes larger, the unevenness becomes larger. If the average droplet diameter exceeds 200 μm, it is difficult to concentrate the droplet diameter distribution in the average droplet diameter by 3 〇. 10% or less. Further, in the production of the cleaning head 6 , 146585.doc -24· 201104729, if the average droplet diameter exceeds 200 μm, unevenness cannot be suppressed, and it is not practical. Further, the average droplet velocity of the liquid droplets of the cleaning liquid discharged from the 20 discharge holes 64 toward the substrate w is set to be 20 m/sec or more and 1 nm/sec or less. Similarly to the droplet diameter, the droplet velocity of the droplets ejected from the cleaning head 6 is not widely distributed over the range of 20 m/sec to 100 m/sec, and the unevenness is extremely small. Specifically, the distribution of the droplet velocity is concentrated below 10% of the average droplet velocity by 3 σ (σ is a standard deviation). Further, the hydraulic pressure of the cleaning liquid supplied to the cleaning head 60 is not limited to 1 MPa or less, and a higher hydraulic pressure is required depending on conditions such as the diameter of the discharge hole 64. Fig. 11 is a view showing the distribution of the droplet velocity of the cleaning liquid. Depending on the type of the substrate W to be cleaned, droplets having a relatively small average droplet velocity such as a distribution dc can be used, and droplets having a relatively large average droplet velocity such as a distribution DD can be used. Regardless of the average droplet velocity, the droplet velocity distribution of the droplets ejected from the cleaning head 6 is measured as the average droplet velocity in terms of 3σ. / 〇 is extremely narrow, basically no unevenness. As a result, excess droplets which are not beneficial for cleaning are also substantially absent. However, as the average droplet velocity continues to increase, the unevenness gradually becomes larger. If the average droplet velocity exceeds i 〇〇m/sec, it is difficult to concentrate the droplet velocity distribution at 1 σ on the average droplet velocity. %the following. Further, regarding the droplet flow rate, the total flow rate of the liquid droplets of the cleaning liquid discharged from the 20 discharge holes 64 toward the substrate W is set to 1 〇 ml/min or more. When the droplets of the cleaning liquid are ejected from the cleaning head 60 toward the substrate w in accordance with the type of the substrate W, the unnecessary droplets for cleaning or the harmful droplets causing damage to the substrate W are completely eliminated. If it does not exist, 146585.doc -25- 201104729 can improve the cleaning efficiency without causing damage to the substrate w' and can achieve sufficient removal rate of pollutants in a short time. Further, in the first embodiment, the liquid droplets of the cleaning liquid are ejected under the above-described discharge conditions, but the form of the cleaning head 60 is not limited thereto. Fig. 12 is a view showing another example of the cleaning head. The cleaning head 160 of Fig. 12 is constructed by laminating a piezoelectric element 162 on a cylindrical prism i6i having a quadrangular prism shape. The cylindrical body 161 has an outer shape of a quadrangular prism shape, and a hollow space having a quadrangular prism shape is formed inside thereof. Openings are formed at both ends of the hollow space of the cylindrical body 161. Similarly to the above-described embodiment, one end is connected to the supply pipe 70, and the other end is connected to the discharge pipe 75 (see Fig. 2). The cylindrical body 161 may be formed of a ceramic such as quartz or zirconia. A plurality of (for example, two) discharge holes 164 are formed in one of the side wall surfaces of the cylindrical body 161. The plurality of discharge holes 164 are arranged in a line along the longitudinal direction of the cylindrical body 161. The size and arrangement pitch of the plurality of discharge holes 164 are the same as those of the plurality of discharge holes 64 of the first embodiment. The width of the side wall surface on which the plurality of discharge holes 164 are provided is 1 〇 mm. Further, a piezoelectric element 贴62 is attached to the outer wall surface of the other side wall of the cylindrical body (the side wall opposite to the side wall on which the plurality of discharge holes 164 are provided). The piezoelectric element 162 and the power source 65 are electrically connected. connection. The power source 65 applies an alternating voltage of a specific frequency to the piezoelectric element 162. The overall configuration of the substrate cleaning apparatus including the cleaning head 160 and the configuration of the cleaning head 16A are the same as those of the first embodiment. When the cleaning liquid is continuously supplied to the cleaning head 160 and the cleaning process is performed, the valve 76 is closed, whereby the cleaning liquid is discharged from the plurality of 146585.doc -26·201104729 discharge holes 164. When the cleaning process is performed, the cleaning liquid inside the cylindrical body 161 is vibrated by the piezoelectric element 162. As in the first embodiment, the plurality of discharge holes 164 are generated and cleaned. Liquid droplets. Further, the cleaning head may be as shown in Fig. 13. The cleaning head (10) of Fig. 13 is provided with a cylindrical body 26 having an apex prism shape, and the cylindrical body 261 has a polygonal prism shape and a hollow space having a polygonal prism shape formed therein: two hollow spaces of the cylindrical body 261 In the same manner as in the above-described third embodiment, the end is connected to the supply pipe 7A, and the other end is connected to the discharge pipe 75 (see Fig. 2). The β-cylinder 261 is made of quartz or oxidized ceramic. It can be formed. A plurality of (for example, 20) discharge holes 264 are formed in one of the side walls of the cylindrical body 261. The size and arrangement pitch of the plurality of discharge holes 264 are the same as those of the plurality of discharge holes 64 of the first embodiment. Further, a piezoelectric element 262 is attached to the outer wall surface I of the side wall opposite to the side wall on which the plurality of discharge holes 264 are provided. The piezoelectric element 262 is electrically connected to the power source 65. The overall configuration of the substrate cleaning apparatus including the cleaning head 260 and the configuration of the cleaning head 26A are the same as those of the first embodiment. The cleaning liquid is continuously supplied to the cleaning head 26, and when the cleaning process is performed, the valve 76 is closed, whereby the cleaning liquid is discharged from the plurality of discharge holes 264. Further, when the cleaning process is performed, the cleaning liquid inside the cylindrical body 261 is vibrated by the piezoelectric element 262. As a result, in the same manner as in the first embodiment, droplets of the cleaning liquid are generated from the plurality of discharge holes 264. Further, the cleaning head may be as shown in FIG. Fig. 14(a) is a longitudinal sectional view of the cleaning head 36〇 146585.doc • 27-201104729, and Fig. M(b) is a cross-sectional view of the cleaning head 360. The cleaning head 360 of Fig. 14 has a cylindrical body 361 having a rectangular parallelepiped shape. The inner space of the cylindrical body 361 is divided into a plurality of blocks by a plurality of partition plates 365. Further, the spacer 365 does not completely separate a plurality of blocks, and the plurality of blocks are connected to each other. An inlet port 366 and a discharge port 367 are formed in the odd body 361. The inlet 366 and the discharge port 367 are in communication with the internal space of the tubular body 361. The inlet 3 66 is connected to the supply pipe 70, and the discharge port 367 is connected to the discharge pipe 75. The cylindrical body 361 may be formed of ceramic such as quartz or oxidized hammer. A discharge hole 3 64 is formed in each of the plurality of blocks divided by the plurality of partition plates 365. The cleaning head 360 is also provided with a plurality of discharge holes 364 arranged in a line, and the size and arrangement pitch of each of the discharge holes 364 are the same as the plurality of discharge holes 614 of the first embodiment. Further, a piezoelectric element 362 is attached to the outer surface of both side walls of the cylindrical body 3 61. The piezoelectric element 362 is electrically connected to the power source 65. The overall configuration of the substrate cleaning apparatus including the cleaning head 360 and the configuration of the periphery of the cleaning head 36A are the same as those of the first embodiment. The cleaning liquid is continuously supplied to the cleaning head 36, and when the cleaning process is performed, the valve 76 is closed, whereby the cleaning liquid is discharged from the plurality of discharge holes 364. Further, when the cleaning process is performed, the piezoelectric element 362 imparts vibration to the cleaning liquid inside the cylindrical body 361. As a result, in the same manner as in the first embodiment, droplets of the cleaning liquid are generated from a plurality of discharge holes 364. That is, it is convenient to use the cleaning head 160 shown in FIG. 12, the cleaning head 260 shown in FIG. 13, or the cleaning head 360 shown in FIG. 14 to discharge the droplets of the cleaning liquid toward the substrate w 146583.doc -28· 201104729. The discharge condition of the droplets is also the same as described above. When the liquid droplets of the cleaning liquid are discharged toward the substrate w while satisfying the above-described discharge conditions, as in the first embodiment, the unnecessary droplets which are not good for cleaning or the harmful droplets which cause damage to the substrate W are completely absent. The cleaning efficiency can be improved without causing damage to the substrate W, and a sufficient removal rate of the contaminant can be achieved in a short time. Further, as long as the cleaning head capable of discharging the liquid droplets of the cleaning liquid under the above-described discharge conditions, the cleaning head may be used as the cleaning head other than the one shown in Figs. 2, 3, and 12 to 14 Discharged toward the substrate w. Further, the cleaning liquid is not limited to pure water, and may be an aqueous solution of a chemical for cleaning. Further, the entire configuration of the substrate cleaning apparatus 1 is not limited to the configuration of the drawing. For example, a gas nozzle that discharges nitrogen gas to the substrate w after the cleaning process may be provided. <Second Embodiment> Fig. 15 is a view showing a substrate cleaning apparatus according to a second embodiment. In the substrate cleaning apparatus 401 of the second embodiment, the blade type cleaning device for cleaning the substrate of the semiconductor w is removed one by one, and the contaminants such as fine particles adhering to the circular substrate w are removed and cleaned. The main components of the substrate cleaning device 〇1 include a rotation holding portion 41 〇, a processing cup 420, a splash cover 430, a squirt driving portion 450, a cleaning head 460, a guard rinse nozzle 480, and a control portion 490 〇 rotation holding portion 410. A rotary base 4U, a rotary shaft 413, and a motor 414 are provided. The rotary base 411 has a disk-shaped structure 146585.doc -29·201104729 which is slightly larger than the diameter of the substrate w. The peripheral portion of the upper surface of the rotary base 411 is erected on the same circumference. In the middle of the 6) support pin 412. Each of the support pins 412 includes a cylindrical support portion that supports the surface peripheral portion of the lower surface of the substrate from below, and a pin portion that is protruded from the upper surface of the support portion and abuts against the edge portion of the substrate w and Press it. Three of the six support pins 412 are fixed support pins that are fixedly disposed on the spin base 411. The fixing support pin is provided with a pin portion projecting from the axial center of the cylindrical support portion. On the other hand, the remaining three of the six support pins 412 are provided as movable support pins that are rotatable (rotating) with respect to the spin base 411. On the movable support pin, the pin portion is protruded slightly from the axis of the cylindrical support portion. The three movable support pins are rotationally driven by interlocking the link mechanism and the drive mechanism (not shown). By the rotation of the movable support pin, the end edge portion of the substrate w can be held by the six pin portions, and the sandwiching of the substrate w can be released. The end edge portion of the substrate w is sandwiched by the six support pins 412, whereby the substrate W can be held in a horizontal posture without causing the spin base 4u to contact the center portion of the lower surface of the substrate. The rotating shaft 413 is vertically disposed at a central portion on the lower surface side of the spin base 411. The square shaft 413 is coupled to the drive pulley 416 of the motor 414 via a drive belt 415. When the motor 414 rotationally drives the drive pulley 416, the drive belt 415 is rotated and the rotary shaft 413 is rotated. Thereby, the substrate W held by the rotary base 411 rotates around the central axis RX in the horizontal direction in the horizontal direction with the rotary base 411 and the rotary shaft 4 1 3 . Further, the inner side of the rotating shaft 413 is formed to be hollow, and the processing liquid nozzle 418 is inserted in the vertical direction in the hollow portion thereof. The processing liquid nozzle 418 is connected in communication with a processing liquid supply source (not shown). Before the treatment liquid nozzle 418 146585.doc -30- 201104729 ^ is opened toward the center of the lower surface of the substrate w held by the rotary base 411. Therefore, the processing liquid can be supplied from the front end of the processing liquid nozzle 418 to the center portion of the lower surface of the substrate w. Further, a gap between the inner wall surface of the rotating shaft 413 and the outer wall surface of the processing liquid nozzle 418 is used as a gas supply flow path, and is connected to a gas supply source (not shown). Gas may be supplied from the upper end of the slit toward the lower surface of the substrate W held by the rotating base 41. The processing cup 42 is provided to surround the rotation holding portion 410. A cylindrical partition wall 421 is provided inside the processing cup 42. Further, a liquid discharge space 422 for discharging the cleaning liquid for the cleaning process of the substrate w is formed inside the partition wall 421 so as to surround the periphery of the rotation holding portion 41. Further, a recovery space 423 for recovering the cleaning liquid for the cleaning process of the substrate w is formed between the outer wall of the processing cup 42 and the partition wall 42丄 so as to surround the liquid discharge space 422. A drain pipe 427 for introducing a π washing liquid into a liquid discharge processing device (not shown) is connected to the liquid discharge space 422, and is connected to the recovery space 423 for introducing a cleaning liquid to a recovery processing device (not shown). The recovery tube Mg. A splash guard 43G for preventing the cleaning liquid from the substrate from scattering to the outside is provided above the processing cup 420. The Xiao anti-reduction cover (4) is formed to be opposite to the middle. The axis RX is rotationally symmetrical. A drain guiding groove 431 having a V-shaped cross section is formed in the inner surface of the upper end portion of the splash cover 430. Further, on the inner surface of the lower end portion of the splash cover 430, a recovery liquid guiding portion 432 including an inclined surface which is inclined downward toward the outside is formed. In the vicinity of the upper end of the recovery liquid guiding portion, a partition wall 146585.doc • 31 - 201104729 nano-slot 433 for accommodating the partition wall 421 of the processing cup 420 is formed. Guard lift
該防濺罩430藉由由滾珠螺桿機構等構成 動機構4 3 5而沿錯垂方向升降驅動。護罩升^ 持之基板w之端緣部之回收位置、與排液導引槽431包圍 經旋轉基座411所保持之基板w之端緣部的排液位置之間 升降。當防濺罩430位於回收位置（圖五所示之位置）時，自 基板w之端緣部飛散之清洗液藉由回收液導引部432而被 導入至回收空間423内，並經由回收管428而回收。另一方 面，當防濺罩430位於排液位置時，自基板w之端緣部飛 散之清洗液藉由排液導引槽43 1而被導入至排液空間422 内’並經由排液管427而排出。如此一來，可切換清洗液 之排液及回收而執行。又，於將基板買交付給旋轉基座 411之情形時，護罩升降驅動機構435使防濺罩43〇下降至 旋轉基座411較防濺罩430之上端更突出之高度位置為止。 第2實施形態之基板清洗裝置4〇 1更包括防護淋洗喷嘴 480。防護淋洗喷嘴480將自省略圖示之防護淋洗液供給源 所輸送之防護淋洗液（本實施形態中為純水）吐出至經旋轉 保持部410所保持之基板W之上表面。來自防護淋洗喷嘴 480之防護淋洗液之吐出之有無、及吐出流量，係藉由控 制部490控制輸送線之流量調整閥等而進行調整。 噴嘴驅動部450具備升降馬達451、擺動馬達453及喷嘴 臂458。於喷嘴臂458之前端安裝有清洗頭460。喷嘴臂45 8 之基端側係連結於擺動馬達453之馬達軸453a上。擺動馬 146585.doc -32· 201104729 達453使清洗頭460於水平面内以馬達軸453a為中心而旋 動。 擺動馬達453係安裝於升降基座454上。升降基座454係 旋接於與固定設置之升降馬達45 1之馬達軸直接連接之滾 珠螺桿452上’並且滑動自如地安裝於導引構件455上。若 升降馬達45 1使滾珠螺桿45 2旋轉，則清洗頭460與升降基 座454—併升降。 藉由喷嘴驅動部450之升降馬達45 1及擺動馬達453，清 洗頭460於較防濺罩430更外側之避讓位置與旋轉基座4 i i 之上方之清洗位置之間移動。又，清洗頭46〇於旋轉基座 411之上方，藉由擺動馬達453而於基板W之中心部上方與 端緣部上方之間擺動。 又，控制部490對設置於基板清洗裝置4〇丨上之各種動作 機構進行控制。控制部490之硬體之構成與通常之電腦相 同。即’控制部490包括進行各種運算處理之CPu、記憶 基本程式之讀出專用之記憶體即R〇M、記憶各種資訊之讀 寫自如之記憶體即RAM及記憶控制用軟體或資料等之磁 碟。 圖16係表示第2實施形態之清洗頭460之概略構成之圖。 又，圖17係清洗頭460之立體圖。清洗頭46〇係於四角稜柱 形狀之筒狀體461上貼設壓電元件（壓電元件）462而構成。 /月洗頭460經由樹脂製之固持件463而安裝於喷嘴臂458之 前端。再者，於圖17中省略固持件463。 於四角稜柱形狀之筒狀體461之内側形成有中空空間， 146585.doc -33, 201104729 且其兩端形成開口。於第2實施形態中，筒狀體461係由石 英而形成，但亦可由氧化錯（Zr02)等之陶瓷而形成。 於第2實施形態中，在清洗頭460之筒狀體461之底面上 穿設有80個吐出孔（喷嘴）464。圖1 8係表示第2實施形態之 吐出孔464之排列之圖’且係自仰視筒狀體461之平面圖。 如圖18所示，於筒狀體461之底面上將20個吐出孔464以特 定之排列間隔排成一行之孔行NR設置4行。藉由將20個吐 出孔464配置4行而於筒狀體461之底面上設置合計8〇個吐 出孔464。各吐出孔464係貫通筒狀體461之底壁面之大致 圓请形狀。80個吐出孔464之直徑（孔徑）均一，於第2實施 形態中為1 5 μπι。 又，於筒狀體461之上表面（與設置有8〇個吐出孔464之 壁面相對向之壁面）之外側貼設有壓電元件462。壓電元件 462係與具有高頻產生器之電源465電性連接。電源465將 特定頻率之交流電壓施加於壓電元件462上。 筒狀體461之内側空間之一端側開口經由供給配管47〇而 與清洗液供給源471連通連接。於供給配管47〇之路徑中途 介插有壓送泵472及過濾器473。壓送泵472自清洗液供給 源471朝向清洗頭460壓送清洗液（本實施形態中為純水）。 過濾器473除去自清洗液供給源471所輸送之清洗液中包含 之異物。 另一方面，於筒狀體461之内側空間之另一端側開口上 連通連接有排出配管475。於排出配管475之路徑中途介插 有閥476。若一邊自供給配管47〇向筒狀體461之内側空間 146585.doc •34· 201104729 供給清洗液一邊打開閥476 排出清洗液。 則自排出配管475向裝置外部 :、次’對具有上述構成之基板清洗裝置4〇1之處理動作 力二說明。以下所說明之處理動作係藉由控制部A%執行 特定^清洗處理用軟體而控制基板清洗裝置彻之各機構 進行者ϋ 19係表不第2實施形態之基板清洗裝置如之 清洗動作之圖。 首先二於防濺罩430下降且旋轉基座411較防濺罩43〇向 更上方犬出之狀態下，將基板评交付給旋轉基座Μ卜繼 防濺罩430上升至上述排液位置為止，並且喷嘴驅動 部450使清洗頭46〇移動至經旋轉基座4ΐι所保持之基板* 之上方的清洗位置為止。於清洗位置處，清洗頭460之複 數個吐出孔464與基板W之間隔設為5 mm以上且25 mm以 下。 田不進行清洗處理時亦始終連續地自壓送泵472向清洗 頭460輸送清洗液。當不進行清洗處理時，打開閥，輸 送至筒狀體461之内部之清洗液直接自排出配管475持續排 出至裝置外部。即，當清洗頭460於較防濺罩430更外側之 避讓位置處待機時、及自避讓位置起移動至基板W上方之 清洗位置時，亦向清洗頭460持續供給清洗液，且該清洗 液持續排出至裝置外部。 其次’藉由旋轉保持部410開始基板W之旋轉，並且自 防護淋洗噴嘴480向旋轉之基板冒之上表面吐出防護淋洗 液而形成液膜《繼而，自清洗頭46〇將清洗液之液滴朝向 146585.doc -35· 201104729 旋轉之基板W之上表面吐出。此時，亦可自處理液噴嘴 418朝向基板W之下表面吐出清洗液。又如圖⑺所示， 一邊使基板W旋轉，-邊藉由喷嘴驅動部州使清洗頭偏 於基板W之中心部上方與端緣部上方之間掃描而不斷進行 清洗處理。當進行清洗處理時，一邊向清洗頭彻輸送清 洗液一邊關閉閥476。因此，筒狀體461内部之清洗液之液 壓上升，藉此自80個吐出孔464吐出清洗液。 又，當進行清洗處理a夺，電源465將特定頻率之交户電 壓施加於壓電元件462上。藉此，壓電元件咐重複膨㈣ 縮’並對筒狀體461内部之清洗液賦予特定頻率之振動。 若提高筒狀體461之内部之清洗液之液壓，並且對該清洗 液賦予振動，則因液壓而自8〇個吐出孔4M流出之清洗液 藉由振動而分散·分開，生成並吐出清洗液之液滴。此 處，自吐出孔464流出之液流被分開而生成液滴係藉由以 下之過程而實現。向筒狀體461内維持固定壓力或具有較 小範圍之壓力（D.C.pressure，直流壓）而供給清洗液。自吐 出孔464藉由上述壓力而自8〇個吐出孔Μ#亦實質上相同之 吐出率流出清洗液。若於該狀態下對壓電元件462施加固 定之特定頻率之交流電壓，則液流因所產生之振動而分 散•分開並形成液滴。此處之利用壓送泵472供給清洗液之 供給壓力與施加於壓電元件462上之交流之頻率，係所謂之 連續喷墨裝置之通常之操作範圍以外的值。附著於基板w上 之微粒等污染物質藉由自清洗頭46〇所吐出之液滴之動能而物理 146585.doc •36· 201104729 地去除。再者，因離心力而自旋轉之基板w上飛散之液體 藉由排液導引槽43 i而被導入至排液空間422内，並自排液 管427排出。 此處’控制部490控制壓送泵472而調整筒狀體461内部 之清洗液之液壓，並且控制電源465而調整賦予給清洗液 之振動’藉此可規定自80個吐出孔464吐出之液滴的吐出 條件（參數）。 於第2實施形態中，自80個吐出孔464朝向基板W所吐出 之清洗液之液滴之直徑（液滴直徑）設為 20 μηι。此處，自 80個吐出孔464所吐出之所有液滴之液滴直徑嚴格來說並 不都是20 μιη ’但藉由本實施形態之方式而吐出之液滴之 液滴直徑之不均極其小。具體而言，液滴直徑之分布以 3σ(σ為標準偏差）計集中在2 μηι以下，可認為自80個吐出 孔464吐出實質上直徑固定（2〇 μιη)之清洗液之液滴。 又，於第2實施形態中，自80個吐出孔464朝向基板w吐 出之清洗液之速度（液滴速度）設為40 m/s。與液滴直徑同 樣地’自80個吐出孔64所吐出之所有液滴之液滴速度嚴格 來說並不都是40 m/s，但藉由本實施形態之方式而吐出之 液滴之液滴速度之不均極其小。具體而言，液滴速度之分 布以3σ計集中在5 m/s以下，可認為自80個吐出孔64實質 上以固定速度（40 m/s)吐出清洗液之液滴。 如此，自第2實施形態之清洗頭460之吐出孔464以固定 液滴速度40 m/s而連續地吐出直徑為20 μηι之均一的清洗 液之液滴。可將吐出之液滴之液滴直徑及液滴速度之不均 146585.doc •37- 201104729 處在較小範圍内，其原因在於：由壓電元件462對高壓填 充至筒狀體461内部之清洗液賦予振動，而自複數個吐出 孔464吐出。即’於先前之雙流體喷嘴中，係使加壓後之 氣體與液體碰撞而生成液滴，因此液滴作為與氣體之多相 流而吐出，控制變得困難’且液滴之液滴直徑及液滴速度 亦分布較廣、不均較大。相對於此，於第2實施形態之清 洗頭460中，一邊對加壓後之液體賦予振動一邊自複數個 吐出孔464吐出，因此可僅吐出液滴，且可使液滴之液滴 直徑及液滴速度之分布較窄、不均較小。 若以40 m/s之液滴速度而吐出液滴直徑為2〇 μϊη之清洗 液之液滴，則可獲得有效之清洗力而又不會對基板w造成 損傷。即，若液滴之直徑過大或者液滴速度過快，則會因 液滴之碰撞而對基板W產生損傷。相反，若液滴之直徑過 小或者液滴速度過慢，則無法獲得必要之清洗力。以4〇 m/s之液滴速度吐出液滴直徑20 μπΐ2清洗液之液滴這樣的 條件’係進行矽之半導體基板W之清洗處理時可獲得有效 清洗力而又不會對基板W造成損傷之較佳的液滴條件。 而且，自第2實施形態之清洗頭46〇之吐出孔464所吐出 之液滴之液滴直徑及液滴速度之分布極其窄。因此，無益 於清洗之多餘液滴或如對基板W造成損傷之有害液滴完全 不存在，可確實地提高清洗效率而又不會對基板w造成損 傷。 、 又，基板清洗裝置401自防護淋洗喷嘴48〇向旋轉之基板 W之上表面吐出防護淋洗液而形成液膜。自清洗頭“❹所 146585.doc -38- 201104729 吐出之液滴經由防護淋洗液之液膜而與基板w之上表面碰 撞。若於該液膜不存在之狀態下使來自清洗頭460之液滴 直接與基板W碰撞’則有可能對基板W造成損傷，但藉由 形成防護淋洗液之液膜，而緩和液滴之緩衝，防止對基板 w造成損傷。 如此’若將液滴直徑固定為20 μπι之清洗液之液滴以固 定液滴速度40 m/s而吐出至基板W，則可獲得有效之清洗 力而又不會對基板，造成損傷，於實際之清洗製程中，要 求於特定之時間内均一地清洗基板W之整個表面。此處， 假設於清洗頭460上設置有i個吐出孔464，對自該單一之 吐出孔464以40 m/s之液滴速度連續地吐出液滴直徑為2〇 μπι之清洗液之液滴時，均一地清洗直徑為3〇〇爪爪之基板 W之整個表面所需的清洗時間進行思考。 首先’為了均一地清洗基板w之整個表面，需要使液滴 無縫隙地與基板W之整個表面碰撞。為此，需要液滴一邊 以液滴直徑之1/2以上進行重疊一邊與基板w碰撞，具體而 s，以基板W之圓周方向上之液滴之碰撞間隔及半徑方向 上之碰撞間隔均為液滴直徑之1/2以下（若液滴直徑為2〇 μηι，則為10 μιη以下）之方式，調節基板旋轉數及清洗 頭460之掃描速度即可。 於基板W之圓周方向上，越接近外周則旋轉速度越大， 端緣部之速度最大。於基板W之端緣部沿圓周方向之液滴 之碰撞間隔若為液滴直徑之1/2以下、即1〇 μπι以下，則較 其更罪内側之沿圓周方向之液滴之碰撞間隔變得更密，不 146585.doc •39· 201104729 會產生縫隙。若自孔徑1 5 μπι之吐出孔464以40 m/s之液滴 速度連續地吐出直徑為20 μηι之清洗液之液滴，則自相同 吐出孔464連續吐出之鄰接之液滴彼此之中心間距離為52 μπ^如此一來，連續吐出且以4〇 m/s之液滴速度與基板w 碰撞之鄰接之液滴的碰撞間隔變為10 μπι，因此基板w之 端緣部之旋轉速度為7.8 m/s，與其相對應之φ300 mm之基 板W之旋轉數為5〇〇 rpm。即，若基板|之旋轉數為5〇〇 rpm以下，則基板w之圓周方向上之液滴之碰撞間隔可為 液滴直徑之1/2以下。 其次，於基板W之半徑方向上亦必須將鄰接之液滴之碰 撞間隔設為10 μιη以下。因此，基板w旋轉一次之期間清 洗頭460沿半徑方向而移動之掃描距離為1〇 μιη以下即可。 再者’清洗頭460嚴格來說係藉由喷嘴驅動部45〇 一邊晝出 圓弧狀之軌跡一邊進行掃描者，由於圓弧之半徑足夠大， 因此清洗頭460可近似於沿基板霤之半徑方向而直線地掃 描。 根據上述條件，若基板W之旋轉數為500 rpm，則基板W 旋轉一次所需之時間為〇.12秒，期間清洗頭46〇為了沿基 板W之半徑方向而前進1〇 μιη，掃描速度需要設為〇 mm/S。即，若一邊將基板W之旋轉數設為50〇 rpm 一邊將 清洗頭460之掃描速度設為〇 〇83 mm/s，則可將基板w之圓 周方向上之液滴之碰撞間隔及半徑方向上之碰撞間隔均設 為液滴直位的1 /2以下，且可使液滴無縫隙地與基板w之整 個表面碰撞。然、，若將清洗頭460之掃描速度設為〇.〇83 146585.doc 201104729 mm/s，則清洗頭46〇自φ3〇〇 mm之基板w(即半徑丨^爪⑷之 中心部移動至端緣部為止需要1800秒。該18〇〇秒之所需時 間係藉由設置有1個吐出孔464之清洗頭46〇而使液滴無縫 隙地與基板W之整個表面碰撞從而均一地進行清洗所需之 理論上的最短時間。 於實際半導體製造製程中，一塊基板|之清洗處理所允 許之時間約為30秒（更長為60秒），1800秒之清洗時間係無 响如何也無法允許之水準。為將該清洗時間設為秒，理 論上必須於清洗頭460上設置60個吐出孔464。 Μ上述方式推算之於30秒内均一地清洗一塊基板w所需 之吐出孔464之個數為60個之理論值，根據丨個吐出孔464 可覆蓋之面積亦可妥當地算出。~，若將清洗頭偏自基 板W之中心。卩起移動至端緣部為止所需之掃描時間設為3 〇 秒之實際值，將基板霤之旋轉數設為5〇〇rpm，3〇秒之掃描 時間内畫出之清洗頭460之執跡之長度算出為丨178〇9 5 mm。將該軌跡之長度除以液滴之直徑後之值作為秒之 掃描期間1個吐出孔464可覆蓋之清洗面積而估算者，為 2356.19〇麵2。φ鳩咖之基板w之清洗面之面積為 薦5.83麵2,液滴必須以直徑之1/2進行重疊必須之清 洗=積可看作係基板w之清洗面之面積的2倍即i4i37i別 匪2。該必要之清洗面積係㈣吐出孔咐可覆蓋之清洗面 積之6〇倍，清洗頭46G於3G秒之掃描時間内自基板〜之中 心部起移動至端緣部為止之期間内，為清洗基板w之整個 表面，必須於清洗頭460上設置6〇個吐出孔464。 146585.doc •41 - 201104729 主如上所述，為於實際中一塊基板w之清洗處理所允許之 清洗時間即30秒之時間内使液滴無縫隙地與基板w之整個 表面碰撞而均一地進行清洗，必須於清洗頭46〇上至少設 置60個以固定速度連續地吐出直徑固定之清洗液之液滴的 吐出孔464。然而，藉由】個吐出孔464而可均一地清洗基 板W之整個表面之丨8〇〇秒之清洗時間係理論上的計算值， 實際上因各種變動原因而需要更長之時間。根據本發明者 等之調查，發現為藉由單一之吐出孔464而均一地清洗基 板W之整個表面，實際上需要2400秒左右之清洗時間。為 使該實際上需要之清洗時間變為30秒，宜於清洗頭46〇上 設置80個吐出孔464。於第2實施形態中，根基於此種理由 而在清洗頭460上穿設80個吐出孔464。 於第2實施形態中 一邊使基板W以500 rpm之速度旋 轉，一邊使設置有80個吐出孔464之清洗頭46〇在3〇秒内自 基板w之中心部起朝向端緣部掃描，並自各個吐出孔464 以40 m/s之液滴速度連續地吐出直徑為2〇 μιη之清洗液之 液滴，藉此可於30秒之比較短的實際處理時間内，均一地 清洗基板W之整個表面。 於以上所述結束基板W整個表面之均一之清洗處理後， 打開閥476，停止來自清洗頭460之液滴吐出，並藉由喷嘴 驅動部450使清洗頭460移動至避讓位置為止。繼而，提高 基板W之旋轉數，執行基板W之乾燥處理。於乾燥處理結 束後，停止基板w之旋轉，並且使防濺罩43〇下降，自旋 轉基座411上搬出處理後之基板w。藉此，基板清洗裝置 146585.doc -42- 201104729 4 01之一系列之處理動作結束。再者，清洗及乾燥處理中 之防濺罩430之位置，宜根據清洗液之回收或排液之必要 性而適當地變更。 <第3實施形態> 其次，對本發明之第3實施形態加以說明。第3實施形態 之基板清洗裝置之全體構成與第2實施形態大致相同（參照 圖15)。於裝置構成上第3實施形態與第2實施形態存在差 異：於清洗頭460上穿設60個吐出孔464。於第3實施形態 中，在清洗頭460之筒狀體461之底面，將60個吐出孔464 以特定之排列間隔排成一行之孔行NR設置1行。各吐出孔 464與第2實施形態同樣地具有貫通筒狀體461之底壁面之 大致圓筒形狀，且其孔徑為15 μπι。除了吐出孔464之排列 以外剩餘的構成與第2實施形態相同。 第3實施形態之基板清洗裝置之動作順序亦與第2實施形 態大致相同。即，一邊自防護淋洗喷嘴48〇向藉由旋轉保 持部410而旋轉之基板w之上表面吐出防護淋洗液而形成 液膜’ 一邊自清洗頭460將清洗液之液滴朝向基板w之上 表面吐出》於第3實施形態中，亦關閉閥476而提高筒狀體 461之内部之清洗液之液壓，並且藉由壓電元件462對上述 清洗液賦予振動。其結果為，可自6〇個吐出孔464生成並 吐出清洗液之液滴。 圖20係表示第3實施形態之清洗動作之圖。與第2實施形 態同樣地，自第3實施形態之清洗頭46〇之吐出孔464以4〇 m/s之直徑為20 之均一的清洗液之液滴連續地吐出直徑 146585.doc -43- 201104729 為2〇 μιη之均一的清洗液之液滴。又，自清洗頭460所吐出 之液滴之液滴直徑及液滴速度之不均較小，具體而言，液 滴直徑之分布以3σ計為2 μηι以下，液滴速度之分布以3(1計 為5 m/s以下。因此’可獲得有效之清洗力而又不會對基 板W造成損傷。 又，為均一地清洗基板W之整個表面，必須使液滴無縫 隙地與基板W之整個表面碰撞。為此，以基板w之圓周方 向上之液滴之碰撞間隔及半徑方向上之碰撞間隔均為液滴 直徑之1 /2以下（若液滴直徑為20 μιη，則為1 ο μπ!以下）的方 式，調節基板W之旋轉數及清洗頭460之掃描速度。 於基板W之圓周方向上，與第2實施形態同樣地，於基 板W之端緣部沿圓周方向之液滴之碰撞間隔若為液滴直徑 之1 /2以下、即1 〇 pm以下’則較其更靠内側之沿圓周方向 之液滴之碰撞間隔變得更密，不會產生縫隙。自吐出孔 464以20 μιη之液滴直徑、40 m/s之液滴速度連續吐出並與 基板w碰撞之鄰接的液滴之碰撞間隔為了變為1〇 ，將 Φ300 mm之基板W之旋轉數設為500 rpm即可。 於基板W之半徑方向上，亦與第2實施形態同樣地，必 須將鄰接之液滴之碰撞間隔設為1〇 μηι以下，為此，基板 w旋轉一次之期間清洗頭46〇沿半徑方向而移動之掃描距 離為10 μιη以下即可。基板w旋轉一次期間清洗頭46〇為沿 基板W之半徑方向而前進10 μηι，掃描速度必須設為〇〇83 mm/s。如上述所示：於清洗頭46〇上設置有單一之吐出孔 464之情形時，若清洗頭460之掃描速度設為〇.〇83 mm/s， 146585.doc 201104729 則清洗頭460自基板W之中心部起移動至端緣部為止需要 1800秒，並不實際。 於第3實施形態中，在清洗頭460上將60個吐出孔464設 置成一行。並且，如圖20所示，由60個吐出孔464排成一 行之孔行NR之長度方向、即吐出孔464之排列方向與基板 W之半徑方向一致。又，孔行NR之長度與基板W之半徑相 等。因此，即便清洗頭460之掃描速度為0.083 mm/s，只 要使清洗頭460沿基板W之半徑方向而以吐出孔464之排列 間隔進行掃描，即可遍及基板W之半徑方向之整個區域而 將鄰接之液滴的碰撞間隔設為10 μηι以下。該情形時，於 基板W之半徑方向上需要之清洗時間係根據吐出孔464之 排列間隔而規定。 於第3實施形態之清洗頭460上，以2.5 mm之間隔而設置 60個吐出孔464。因此，60個吐出孔464之兩端間之距離、 即孔行NR之長度為1 50 mm，與φ300 mm之基板W之半徑相 等。當開始清洗處理時，只要以60個吐出孔464之兩端位 於基板W之中心部與端緣部之方式使清洗頭460移動，使 清洗頭460以0.083 mm/s之掃描速度沿基板W之半徑方向而 掃描，則可於30秒内移動排列間隔之2.5 mm距離，且可遍 及基板W之半徑方向之整個區域而將鄰接之液滴之碰撞間 隔設為10 μηι以下。 如上所述，於第3實施形態中，在清洗頭460上以2.5 mm 之間隔而將60個吐出孔464設成一行，當開始清洗處理時 以60個吐出孔464之排列與基板W之半徑方向吻合並且兩 146585.doc -45- 201104729 立而之吐出孔464位於基板W之中心部與端緣部之方式，使 清洗頭460移動。接著，一邊使基板Wa5〇〇卬爪之速度旋 轉’一邊使將60個吐出孔464設成一行之清洗頭460沿基板 W之半徑方向而以0 〇83 mm/s之速度在30秒内進行掃描， 而自各個吐出孔464以40 m/s之液滴速度連續地吐出直徑 為20 μιη的清洗液之液滴。藉此，可於3〇秒之比較短的實 際處理時間内’將基板W之圓周方向上之液滴之碰撞間隔 及半徑方向上的碰撞間隔均設為液滴直徑之丨/2以下，且 可使液滴無縫隙地與基板W之整個表面碰撞，從而均一地 清洗整個表面。 <第2實施形態及第3實施形態之吐出孔排列之總結> 於第2實施形態中在清洗頭460上將20個吐出孔464配置4 行’藉此設置合計80個吐出孔464，於第3實施形態中在清 洗頭460上設置排成一行之60個吐出孔464。.又，如第2實 施形態之描述所示：為了於實際的一塊基板w之清洗處理 所允許之清洗時間即3 0秒之時間内使液滴無縫隙地與基板 W之整個表面碰撞而進行均一地清洗，必須於清洗頭4 6 〇 上穿設至少60以固定速度連續地吐出直徑固定之清洗液之 液滴的吐出孔464。 然而，當自清洗頭460吐出液滴時，自防護淋洗喷嘴480 向基板W之上表面吐出防護淋洗液而形成液膜，藉此缓和 液滴碰撞之緩衝，從而確實地防止對基板w造成損傷。於 第1實施形態中係將20個吐出孔464以特定之排列間隔排成 一行之孔行NR設置4行，但若此種由複數個吐出孔464排 146585.doc -46 - 201104729 成一行之孔行NR變為6行以上，則難以於所有吐出孔4料 之正下方形成液膜。若自吐出孔464所吐出之液滴碰撞未 形成液膜之區域，則該部分有可能產生損傷。因此，由複 數個吐出孔464排成一行之孔行NRi行數必須設置5行以 下。 另一方面，於第2實施形態中係將6〇個吐出孔464排成一 打而設置，但若排成一行之吐出孔464之個數超過6〇個， 貝J與上述同樣地，難以於所有吐出孔Μ#之正下方形成液 膜。又，若排成一行之吐出孔464之個數超過6〇個，則難 以自壓送泵472向所有吐出孔464以均等之壓力輸送清洗 液。因此，排成一行之吐出孔464之個數必須為6〇個以 下。 根據該等方面，若對設置於清洗頭46〇上之吐出孔464之 排列形態進行總結，根據將清洗處理時間縮短至實際允許 之範圍内之觀點而言，必須於清洗頭46〇上設置至少6〇個 吐出孔464。又，為了於所有吐出孔464之正下方形成防護 淋洗液之液膜，並且自壓送泵472向所有吐出孔464以均等 之壓力輸送清洗液，排成一行之吐出孔464之上限為6〇 個，孔行之上限為5行。即，必須於清洗頭46〇上將6〇個以 下之吐出孔464排成一行之孔行設置在5行以下，吐出孔 464之總數之上限為3〇〇個。因此，設置於清洗頭46〇上之 吐出孔464之總數限定於60個以上且3〇〇個以下之範圍内。 以上，對本發明之第2實施形態及第3實施形態進行了說 明’但只要不脫離本發明之主旨’除了上述以外可進行各 146585.doc •47· 201104729 種各樣的變更。例如，於第2實施形態中，係於清洗頭46〇 上將20個吐出孔464配置4行，於第3實施形態中係將60個 土出孔464配置一行，但設置於清洗頭上之吐出孔 之排列形態並不限定於該等，只要處於上述限制範圍内則 亦可為其他形態。即，只要設置於清洗頭460上之吐出孔 464之總數為60個以上且3〇〇個以下，且由6〇個以下之吐出 孔464吐出一行之孔行排列在5行以下，則可愛用任意之排 列形態。 又，於第2及第3實施形態之基板清洗裝置401中，不進 行清洗處理時亦向清洗頭46〇供給清洗液，且該清洗液排 出至裝置外部，但亦可作為循環系統而構成。#，亦可將 閥476之下游側之配管經由過濾器而連接於清洗液供給源 471使來自清洗頭460之清洗液回流至清洗液供給源 47卜 又，於第2及第3實施形態之清洗頭46〇中，係於四角棱 柱形狀之筒狀體461上穿設複數個吐出孔，但清洗頭 460之形態並不限定於此。圖21係表示清洗頭之其他例之 圖。 圖21之清洗頭560構成為於圓筒形狀之筒狀體56ι之壁面 穿設複數個吐出孔564，並且於與其等複數個吐出孔564相 對向之部位之外壁面貼設壓電元件562。筒狀體561之中空 空間之兩端形成開口，與第2及第3實施形態同樣地，其一 端連接於供給配官470上，並且另一端連接於排出配管475 上（參照圖16)。筒狀體561由石英或氧化鍅等之陶瓷而形成 146585.doc •48- 201104729 即可。 具備此種圓筒形狀之清洗頭560之基板清洗裝置之全體 構成與第2貫施形態相同。向清洗頭5 6 〇連續地持續供給清 洗液’進行清洗處理時，關閉閥476，藉此自複數個吐出 孔564吐出清洗液。又，當進行清洗處理時，藉由壓電元 件562而對筒狀體561之内部之清洗液賦予振動。藉此，可 於與第2及第3實施形態相同之條件（液滴直徑2〇 μηι、液滴 速度40 m/s)下自複數個吐出孔564生成並吐出清洗液之液 滴。而且，與第2及第3實施形態同樣地藉由排列複數個吐 出孔564，而可於.比較短之實際處理時間内使液滴無縫隙 地與基板W之整個表面碰撞，從而可均一地清洗整個表 面。 然而，若於圓筒形狀之筒狀體561上設置複數個孔行， 則難以均一地保持吐出孔564至基板w為止之距離，因此 當設置複數個孔行時，較好的是將如圖21之筒狀體561設 為複數根平行。 又，作為清洗頭之形態，亦可於圖17、圖21所示之形狀 以外之筒狀體上設置複數個吐出孔，並自其等複數個吐出 孔將清洗液之液滴朝向基板W吐出。 又，於第3貫施形態中，係於清洗頭46〇上將6〇個吐出孔 464 5又為排成一行，但為了防止損傷向基板w之中心部集 中，亦可設為吐出孔464越接近中央部則孔徑越小。 又，作為本發明之基板清洗裝置之處理對象之基板並不 限疋於半導體基板，亦可為用於液晶顯示裝置等之玻璃基 146585.doc •49- 201104729 板。 又，清洗液並不限定於純水，亦可為清洗用之化學藥品 之水溶液。又，並不限定於防護淋洗液之純水，亦可為化 學藥品之水溶液。防護淋洗液可與清洗液種類相同，亦可 種類不同。 又，基板清洗裝置401之全體構成並不限定於圖15之形 態，例如亦可設置向清洗處理後之基板1喷出氮氣以使其 乾燥之氣體喷嘴。 【圖式簡單說明】 圖1係表示適於清洗半導體基板之較佳之第1實施形態之 基板清洗裝置的圖。 圖2係表不圖丨之基板清洗裝置之清洗頭之概略構成的 圖。 圖3係圖1之基板清洗裝置之清洗頭之立體圖。 圖4係表示清洗液之液滴直徑之分布之圖。 圖5係表示清洗液之液滴速度之分布之圖。 圖ό係表示所吐出之液滴之液滴直徑與對基板造成之損 傷之相互關係的圖。 圖7係表示所吐出之液滴之液滴速度與污染物質之去除 率之相互關係的圖。 圖8係表示所吐出之液滴之液滴流量不同而引起之污染 物質之去除率之差異的圖。 圖9係表示進行包含其他種類之基板之清洗處理之基板 清洗裝置的圖。 146585.doc 201104729 圖10係表不適於清洗包含其他種類之基板之清洗液之液 滴直徑之分布的圖。 圖π係表示適於清洗包含其他種類之基板之清洗液之液 滴速度之分布的圖。 圖12係表示清洗頭之其他例之圖。 圖13係表示清洗頭之其他例之圖。 圖14(a)、（b)係表示清洗頭之其他例之圖。 圖15係表示第2實施形態之基板清洗裝置之圖。 圖16係表示圖15之基板清洗裝置之清洗頭之概略構成之 圖。 圖17係圖15之基板清洗裝置之清洗頭之立體圖。 圖18係表示第2實施形態中之吐出孔之排列之圖。 圖19係表示第2實施形態中之清洗動作之圖。 圖20係表示第3實施形態中之清洗動作之圖。 圖21係表示清洗頭之其他例之圖。 【主要元件符號說明】 1、401 基板清洗裝置 10 、 410 旋轉保持部 11 、 411 旋轉基座 20 、 420 處理杯 30 、 430 防濺罩 50 、 450 喷嘴驅動部 60 ' 160、260、 360 、 460 、 560 清洗頭 146585.doc -51 · 201104729 61 、 161 、 261 、 筒狀體 361 、 461 、 561 62 ' 162 ' 262 、 壓電元件 362 、 462 、 562 64、 164、 264、 吐出孑L 364 、 464 、 564 65 > 465 電源 70 ' 470 供給配管 75 ' 475 排出配管 76 、 476 閥 90 ' 490 控制部 111 支持台 480 防護淋洗喷嘴 NR 孔行 W 基板 146585.doc -52-The splash cover 430 is driven up and down in the wrong direction by the moving mechanism 435 by a ball screw mechanism or the like. The recovery position of the edge portion of the substrate w held by the shield rises and falls between the liquid discharge guide groove 431 and the liquid discharge position of the edge portion of the substrate w held by the rotary base 411. When the splash guard 430 is located at the recovery position (the position shown in FIG. 5), the cleaning liquid scattered from the edge portion of the substrate w is introduced into the recovery space 423 through the recovery liquid guiding portion 432, and is passed through the recovery tube. 428 and recycled. On the other hand, when the splash guard 430 is at the liquid discharge position, the cleaning liquid scattered from the edge portion of the substrate w is introduced into the liquid discharge space 422 by the liquid discharge guide groove 43 1 and is discharged through the liquid discharge pipe 427 and discharged. In this way, the discharge and recovery of the cleaning liquid can be switched and executed. Further, when the substrate is purchased and delivered to the spin base 411, the shroud lift drive mechanism 435 lowers the splash guard 43 to a position where the spin base 411 protrudes more than the upper end of the splash guard 430. The substrate cleaning apparatus 4A of the second embodiment further includes a protective rinse nozzle 480. The protective rinse nozzle 480 discharges the protective eluent (pure water in the present embodiment) sent from the protective eluent supply source (not shown) to the upper surface of the substrate W held by the rotary holding portion 410. The presence or absence of the discharge of the protective eluent from the protective rinse nozzle 480 and the discharge flow rate are adjusted by the control unit 490 controlling the flow rate adjustment valve of the transfer line. The nozzle driving unit 450 includes an elevation motor 451, a swing motor 453, and a nozzle arm 458. A cleaning head 460 is attached to the front end of the nozzle arm 458. The base end side of the nozzle arm 45 8 is coupled to the motor shaft 453a of the swing motor 453. Swing horse 146585.doc -32· 201104729 Up to 453 rotates the cleaning head 460 in the horizontal plane centered on the motor shaft 453a. The swing motor 453 is attached to the lift base 454. The lift base 454 is screwed onto the ball screw 452 directly coupled to the motor shaft of the fixed lift motor 45 1 and slidably mounted on the guide member 455. When the lift motor 45 1 rotates the ball screw 45 2, the cleaning head 460 and the lift base 454 are lifted and lowered. The cleaning head 460 is moved between the escape position outside the splash guard 430 and the cleaning position above the spin base 4 i i by the lift motor 45 1 of the nozzle drive unit 450 and the swing motor 453. Further, the cleaning head 46 is placed above the spin base 411, and is swung between the upper portion of the substrate W and the upper portion of the edge portion by the swing motor 453. Further, the control unit 490 controls various operation mechanisms provided on the substrate cleaning device 4A. The hardware of the control unit 490 is constructed in the same manner as a normal computer. In other words, the control unit 490 includes a memory for performing various arithmetic processing, R〇M, which is a memory for reading basic memory programs, and a memory for reading and writing various memories, such as RAM and memory control software or data. dish. Fig. 16 is a view showing a schematic configuration of a cleaning head 460 according to the second embodiment. 17 is a perspective view of the cleaning head 460. The cleaning head 46 is formed by attaching a piezoelectric element (piezoelectric element) 462 to a tubular body 461 having a quadrangular prism shape. The / month shampoo 460 is attached to the front end of the nozzle arm 458 via a resin holder 463. Further, the holder 463 is omitted in FIG. A hollow space is formed inside the quadrangular prism-shaped cylindrical body 461, 146585.doc -33, 201104729 and an opening is formed at both ends thereof. In the second embodiment, the tubular body 461 is formed of quartz, but may be formed of a ceramic such as oxidized (ZrO 2 ). In the second embodiment, 80 discharge holes (nozzles) 464 are bored in the bottom surface of the cylindrical body 461 of the cleaning head 460. Fig. 1 is a plan view showing the arrangement of the discharge holes 464 in the second embodiment, and is a plan view from the bottom view cylindrical body 461. As shown in Fig. 18, on the bottom surface of the cylindrical body 461, 20 rows of holes NR are arranged in a row at a predetermined interval. A total of eight discharge holes 464 are provided on the bottom surface of the cylindrical body 461 by arranging four discharge holes 464 in four rows. Each of the discharge holes 464 is formed in a substantially circular shape passing through the bottom wall surface of the tubular body 461. The diameter (pore diameter) of the 80 discharge holes 464 is uniform, and is 15 μm in the second embodiment. Further, a piezoelectric element 462 is attached to the outer surface of the upper surface of the cylindrical body 461 (the wall surface facing the wall surface on which the eight discharge holes 464 are provided). The piezoelectric element 462 is electrically connected to a power source 465 having a high frequency generator. The power source 465 applies an alternating voltage of a specific frequency to the piezoelectric element 462. One end side opening of the inner space of the cylindrical body 461 is connected to the cleaning liquid supply source 471 via the supply pipe 47A. A pressure feed pump 472 and a filter 473 are inserted in the middle of the path of the supply pipe 47A. The pressure feed pump 472 pressurizes the cleaning liquid (pure water in the present embodiment) from the cleaning liquid supply source 471 toward the cleaning head 460. The filter 473 removes foreign matter contained in the cleaning liquid supplied from the cleaning liquid supply source 471. On the other hand, a discharge pipe 475 is connected to the other end side opening of the inner space of the cylindrical body 461. A valve 476 is inserted in the middle of the path of the discharge pipe 475. When the cleaning liquid is supplied from the supply pipe 47 to the inner space 146585.doc •34·201104729 of the cylindrical body 461, the valve 476 is opened to discharge the cleaning liquid. Then, from the discharge pipe 475 to the outside of the apparatus, the second operation of the substrate cleaning apparatus 4〇1 having the above configuration will be described. The processing operation described below is performed by the control unit A% executing the specific cleaning processing software, and the substrate cleaning device is controlled by the respective mechanisms. 19 is a diagram showing the cleaning operation of the substrate cleaning device of the second embodiment. . First, when the splash guard 430 is lowered and the rotating base 411 is pulled out from the splash guard 43 to the upper side, the substrate is delivered to the rotating base, and the splash guard 430 is raised to the above discharge position. And the nozzle driving unit 450 moves the cleaning head 46A to the cleaning position above the substrate* held by the rotating base 4ΐ. At the cleaning position, the interval between the plurality of discharge holes 464 of the cleaning head 460 and the substrate W is set to be 5 mm or more and 25 mm or less. When the field is not subjected to the cleaning process, the cleaning liquid is continuously supplied from the pressure feed pump 472 to the cleaning head 460. When the cleaning process is not performed, the valve is opened, and the cleaning liquid sent to the inside of the cylindrical body 461 is directly discharged from the discharge pipe 475 to the outside of the apparatus. That is, when the cleaning head 460 is in standby position at a position further away from the splash guard 430, and when moving from the avoidance position to the cleaning position above the substrate W, the cleaning liquid is continuously supplied to the cleaning head 460, and the cleaning liquid is supplied. Continue to drain to the outside of the unit. Secondly, the rotation of the substrate W is started by the rotation holding portion 410, and the protective eluent is discharged from the protective rinsing nozzle 480 to the upper surface of the rotating substrate to form a liquid film. Then, the cleaning liquid is cleaned from the cleaning head 46. The droplets are discharged toward the upper surface of the substrate W which is rotated 146585.doc -35·201104729. At this time, the cleaning liquid may be discharged from the processing liquid nozzle 418 toward the lower surface of the substrate W. Further, as shown in Fig. 7 (7), while the substrate W is rotated, the cleaning process is continuously performed by scanning the cleaning head between the upper portion of the substrate W and the upper portion of the edge portion by the nozzle driving portion. When the cleaning process is performed, the valve 476 is closed while the cleaning liquid is thoroughly supplied to the cleaning head. Therefore, the liquid pressure of the cleaning liquid inside the cylindrical body 461 rises, whereby the cleaning liquid is discharged from the 80 discharge holes 464. Further, when the cleaning process is performed, the power source 465 applies the voltage of the specific frequency to the piezoelectric element 462. Thereby, the piezoelectric element 咐 repeats the expansion and imparts a vibration of a specific frequency to the cleaning liquid inside the cylindrical body 461. When the hydraulic pressure of the cleaning liquid in the inside of the cylindrical body 461 is increased and vibration is applied to the cleaning liquid, the cleaning liquid which has flowed out from the eight discharge holes 4M by the hydraulic pressure is dispersed and separated by vibration, and the cleaning liquid is generated and discharged. Droplets. Here, the flow of the liquid flowing out from the discharge port 464 is separated to form a droplet by the following process. The cleaning liquid is supplied to the inside of the cylindrical body 461 by maintaining a constant pressure or a relatively small range of pressure (D.C. pressure, DC pressure). The self-discharging hole 464 flows out of the cleaning liquid at substantially the same discharge rate from the 8 吐 discharge holes 藉 by the above pressure. When an AC voltage of a specific frequency fixed to the piezoelectric element 462 is applied in this state, the liquid flow is dispersed by the generated vibration, and the liquid droplets are separated. Here, the supply pressure of the cleaning liquid supplied by the pressure feed pump 472 and the frequency of the alternating current applied to the piezoelectric element 462 are values other than the normal operation range of the so-called continuous ink jet apparatus. The contaminant such as particles adhering to the substrate w is physically removed by the kinetic energy of the droplets ejected from the cleaning head 46 物理 physics 146585.doc • 36· 201104729. Further, the liquid scattered on the substrate w which is rotated by the centrifugal force is introduced into the liquid discharge space 422 by the liquid discharge guiding groove 43 i, and is discharged from the liquid discharge pipe 427. Here, the control unit 490 controls the pressure feed pump 472 to adjust the hydraulic pressure of the cleaning liquid inside the cylindrical body 461, and controls the power supply 465 to adjust the vibration applied to the cleaning liquid. Thus, the liquid discharged from the 80 discharge holes 464 can be specified. The discharge condition (parameter) of the drop. In the second embodiment, the diameter (droplet diameter) of the liquid droplets of the cleaning liquid discharged from the 80 discharge holes 464 toward the substrate W is 20 μm. Here, the droplet diameters of all the droplets ejected from the 80 ejection holes 464 are not always 20 μm. However, the droplet diameter of the droplets ejected by the embodiment is extremely small. . Specifically, the distribution of the droplet diameters is concentrated to 2 μηι or less in terms of 3σ (σ is a standard deviation), and it is considered that droplets of the cleaning liquid having a substantially constant diameter (2 μm) are discharged from the 80 discharge holes 464. Further, in the second embodiment, the speed (droplet velocity) of the cleaning liquid discharged from the 80 discharge holes 464 toward the substrate w is 40 m/s. Similarly to the droplet diameter, the droplet velocity of all the droplets ejected from the 80 ejection holes 64 is not always 40 m/s, but the droplets of the droplets discharged by the embodiment are discharged. The uneven speed is extremely small. Specifically, the distribution of the droplet velocities is concentrated to 5 m/s or less in terms of 3 σ, and it is considered that the droplets of the cleaning liquid are discharged from the 80 discharge holes 64 substantially at a fixed speed (40 m/s). As described above, the discharge holes 464 of the cleaning head 460 of the second embodiment continuously discharge droplets of the cleaning liquid having a uniform diameter of 20 μm at a fixed droplet velocity of 40 m/s. The unevenness of the droplet diameter and the droplet velocity of the discharged droplets 146585.doc • 37- 201104729 can be in a small range because the piezoelectric element 462 is filled with high pressure to the inside of the cylindrical body 461. The cleaning liquid imparts vibration and is discharged from a plurality of discharge holes 464. That is, in the previous two-fluid nozzle, the pressurized gas collides with the liquid to generate droplets, so that the droplets are discharged as a multiphase flow with the gas, and the control becomes difficult 'and the droplet diameter of the droplets And the droplet velocity is also widely distributed and uneven. On the other hand, in the cleaning head 460 of the second embodiment, the liquid is pressurized from the plurality of discharge holes 464 while imparting vibration to the pressurized liquid, so that only the droplets can be ejected, and the droplet diameter of the droplets can be made. The droplet velocity distribution is narrower and the unevenness is smaller. When a droplet of a cleaning liquid having a droplet diameter of 2 〇 μ η is discharged at a droplet velocity of 40 m/s, an effective cleaning force can be obtained without causing damage to the substrate w. That is, if the diameter of the droplet is too large or the droplet velocity is too fast, the substrate W is damaged by the collision of the droplet. Conversely, if the diameter of the droplet is too small or the droplet velocity is too slow, the necessary cleaning force cannot be obtained. The condition of ejecting a droplet of a droplet diameter of 20 μπΐ2 in a cleaning liquid at a droplet velocity of 4 〇m/s is a process of cleaning the semiconductor substrate W, and an effective cleaning force is obtained without causing damage to the substrate W. Preferred droplet conditions. Further, the droplet diameter and the droplet velocity distribution of the liquid droplets discharged from the discharge holes 464 of the cleaning head 46 of the second embodiment are extremely narrow. Therefore, unnecessary droplets which are not useful for cleaning or harmful droplets which cause damage to the substrate W are completely absent, and the cleaning efficiency can be surely improved without causing damage to the substrate w. Further, the substrate cleaning device 401 discharges the protective eluent from the protective rinsing nozzle 48 to the upper surface of the rotating substrate W to form a liquid film. The self-cleaning head "❹所146585.doc -38- 201104729 The discharged liquid droplet collides with the upper surface of the substrate w through the liquid film of the protective eluent. If the liquid film is not present, the cleaning head 460 is brought into the state. If the droplet directly collides with the substrate W, it may damage the substrate W, but by forming a liquid film of the protective eluent, the buffer of the droplet is alleviated to prevent damage to the substrate w. Thus, if the droplet diameter is The droplets of the cleaning solution fixed at 20 μm are spouted to the substrate W at a fixed droplet velocity of 40 m/s, so that an effective cleaning force can be obtained without causing damage to the substrate, which is required in the actual cleaning process. The entire surface of the substrate W is uniformly cleaned for a specific period of time. Here, it is assumed that i discharge holes 464 are provided in the cleaning head 460, and continuous flow rates of 40 m/s are continuously applied to the single discharge holes 464. When discharging a droplet of a cleaning liquid having a droplet diameter of 2 μm, the cleaning time required for uniformly cleaning the entire surface of the substrate W having a diameter of 3 〇〇 claws is considered. First, in order to uniformly clean the entire substrate w Surface, need to make droplets The seamless gap collides with the entire surface of the substrate W. For this purpose, the droplets are required to collide with the substrate w while overlapping the droplet diameter by 1/2 or more, specifically, the droplets in the circumferential direction of the substrate W. The collision interval and the collision interval in the radial direction are both 1/2 or less of the droplet diameter (10 μm or less if the droplet diameter is 2 〇μηι), and the number of rotations of the substrate and the scanning speed of the cleaning head 460 are adjusted. In the circumferential direction of the substrate W, the closer to the outer circumference, the larger the rotation speed is, and the speed of the edge portion is the largest. The collision interval of the droplets in the circumferential direction at the edge portion of the substrate W is 1/ of the droplet diameter. 2 or less, that is, 1 〇μπι or less, the collision interval of the droplets in the circumferential direction is more dense than the inner side of the sin. The gap between the droplets becomes 146585.doc •39·201104729. If the gap is 1 5 μπι The hole 464 continuously ejects a droplet of the cleaning liquid having a diameter of 20 μm at a droplet velocity of 40 m/s, and the distance between the centers of the adjacent droplets continuously discharged from the same ejection hole 464 is 52 μπ^. , continuously spit out and at 4〇m/s The collision interval between the droplets whose droplet velocity collides with the substrate w becomes 10 μm, so the rotation speed of the edge portion of the substrate w is 7.8 m/s, and the number of rotations of the substrate W corresponding to φ 300 mm is 5 〇〇 rpm. That is, if the number of rotations of the substrate| is 5 rpm or less, the collision interval of the droplets in the circumferential direction of the substrate w may be 1/2 or less of the diameter of the droplet. Next, the radius of the substrate W In the direction, the collision interval between the adjacent droplets must be 10 μm or less. Therefore, the scanning distance of the cleaning head 460 in the radial direction during the rotation of the substrate w may be 1 μm or less. Furthermore, the cleaning head 460 strictly scans the arc-shaped track by the nozzle driving unit 45. Since the radius of the arc is sufficiently large, the cleaning head 460 can be approximated along the substrate. Scan in a radial direction and in a straight line. According to the above conditions, if the number of rotations of the substrate W is 500 rpm, the time required for the substrate W to rotate once is 〇12 seconds, and during the period in which the cleaning head 46 is advanced by 1 μm in the radial direction of the substrate W, the scanning speed is required. Set to 〇mm/S. In other words, when the scanning speed of the cleaning head 460 is set to 〇〇83 mm/s while the number of rotations of the substrate W is 50 rpm, the collision interval and the radial direction of the liquid droplets in the circumferential direction of the substrate w can be obtained. The upper collision interval is set to be 1 /2 or less of the straight position of the liquid droplet, and the liquid droplet can be collided seamlessly with the entire surface of the substrate w. However, if the scanning speed of the cleaning head 460 is set to 〇.〇83 146585.doc 201104729 mm/s, the cleaning head 46 is moved from the center of the φ3〇〇mm substrate (ie, the center of the radius 丨^ claw (4) to 1800 seconds is required for the edge portion. The required time for the 18-second period is uniformly performed by colliding the droplets with the entire surface of the substrate W by the cleaning head 46 provided with one discharge hole 464. The theoretical minimum time required for cleaning. In the actual semiconductor manufacturing process, the cleaning time of one substrate|the processing time is about 30 seconds (60 seconds longer), and the cleaning time of 1800 seconds is not possible without sound. In order to set the cleaning time to seconds, it is theoretically necessary to provide 60 discharge holes 464 in the cleaning head 460. The above-mentioned method is used to estimate the discharge holes 464 required for uniformly cleaning one substrate w in 30 seconds. The number is 60 theoretical values, and the area covered by one of the discharge holes 464 can be properly calculated. ~ If the cleaning head is biased from the center of the substrate W, the scanning required to move to the edge portion is picked up. The time is set to the actual value of 3 sec. The number of rotations is set to 5 rpm, and the length of the trace of the cleaning head 460 drawn in the scan time of 3 sec is calculated as 丨 178 〇 9 5 mm. The length of the trajectory is divided by the diameter of the droplet. The value is estimated as the cleaning area covered by one discharge hole 464 during the scanning period of the second, which is 2356.19〇2. The area of the cleaning surface of the substrate of φ鸠咖 is recommended to be 5.83 face 2, and the droplet must be 1 of the diameter. /2 cleaning necessary for overlap = product can be regarded as twice the area of the cleaning surface of the substrate w, i.e. i4i37i 匪 2. The necessary cleaning area is (4) 6 times the cleaning area covered by the discharge hole ,, cleaning During the scanning period of 3 Gsec from the center portion of the substrate to the end edge portion, in the scanning period of 3 Gsec, in order to clean the entire surface of the substrate w, it is necessary to provide six ejection holes 464 in the cleaning head 460. 146585. Doc •41 - 201104729 As described above, in order to prevent the droplets from colliding seamlessly with the entire surface of the substrate w in a cleaning time of 30 seconds for the cleaning process of one substrate w in practice, the cleaning is uniformly performed, At least 60 fixed speeds must be set on the cleaning head 46〇 The discharge hole 464 of the droplet of the cleaning liquid having a fixed diameter is continuously discharged. However, the cleaning time of the entire surface of the substrate W can be uniformly washed by the discharge hole 464, which is theoretically calculated. The value actually takes a longer time for various reasons of variation. According to the investigation by the inventors of the present invention, it has been found that the entire surface of the substrate W is uniformly cleaned by a single ejection hole 464, and it takes about 2400 seconds to actually clean. In order to make the actually required cleaning time 30 seconds, it is preferable to provide 80 discharge holes 464 on the cleaning head 46. In the second embodiment, 80 discharge holes 464 are bored in the cleaning head 460 for this reason. In the second embodiment, while the substrate W is rotated at a speed of 500 rpm, the cleaning head 46 provided with the 80 discharge holes 464 is scanned from the center portion of the substrate w toward the edge portion within 3 seconds. The droplets of the cleaning liquid having a diameter of 2 μm are continuously discharged from the respective ejection holes 464 at a droplet velocity of 40 m/s, whereby the substrate W can be uniformly cleaned in a relatively short actual processing time of 30 seconds. The entire surface. After the uniform cleaning process of the entire surface of the substrate W is completed as described above, the valve 476 is opened to stop the discharge of the liquid droplets from the cleaning head 460, and the cleaning head 460 is moved to the evacuation position by the nozzle driving unit 450. Then, the number of rotations of the substrate W is increased, and the drying process of the substrate W is performed. After the drying process is completed, the rotation of the substrate w is stopped, and the splash cover 43 is lowered, and the processed substrate w is carried out from the spin base 411. Thereby, the processing operation of one of the substrate cleaning devices 146585.doc - 42 - 201104729 4 01 ends. Further, the position of the splash cover 430 in the cleaning and drying process should be appropriately changed depending on the necessity of recovery or discharge of the cleaning liquid. <Third Embodiment> Next, a third embodiment of the present invention will be described. The overall configuration of the substrate cleaning apparatus of the third embodiment is substantially the same as that of the second embodiment (see Fig. 15). The third embodiment differs from the second embodiment in the configuration of the device: 60 discharge holes 464 are bored in the cleaning head 460. In the third embodiment, on the bottom surface of the cylindrical body 461 of the cleaning head 460, a row of holes NR in which a plurality of discharge holes 464 are arranged at a predetermined interval is provided in one row. Similarly to the second embodiment, each of the discharge holes 464 has a substantially cylindrical shape penetrating through the bottom wall surface of the cylindrical body 461, and has a pore diameter of 15 μm. The configuration remaining except for the arrangement of the discharge holes 464 is the same as that of the second embodiment. The operation sequence of the substrate cleaning apparatus according to the third embodiment is also substantially the same as that of the second embodiment. In other words, the protective eluent is discharged from the protective rinse nozzle 48 to the upper surface of the substrate w that is rotated by the rotation holding portion 410 to form a liquid film, and the liquid droplets of the cleaning liquid are directed from the cleaning head 460 toward the substrate w. In the third embodiment, the valve 476 is closed to increase the hydraulic pressure of the cleaning liquid inside the cylindrical body 461, and the piezoelectric element 462 applies vibration to the cleaning liquid. As a result, droplets of the cleaning liquid can be generated and discharged from the six ejection holes 464. Fig. 20 is a view showing the cleaning operation of the third embodiment. In the same manner as in the second embodiment, the discharge hole 464 of the cleaning head 46 of the third embodiment continuously discharges a droplet of 146585.doc -43- with a uniform cleaning liquid droplet of a diameter of 4 〇m/s. 201104729 is a uniform cleaning solution of 2〇μιη. Further, the droplet diameter and the droplet velocity of the droplets ejected from the cleaning head 460 are small, and specifically, the droplet diameter distribution is 2 μηι or less in terms of 3σ, and the droplet velocity distribution is 3 ( 1 is 5 m/s or less. Therefore, an effective cleaning force can be obtained without causing damage to the substrate W. Further, in order to uniformly clean the entire surface of the substrate W, it is necessary to make the droplets seamlessly and the substrate W For this purpose, the collision interval between the droplets in the circumferential direction of the substrate w and the collision interval in the radial direction are both 1 / 2 or less of the droplet diameter (if the droplet diameter is 20 μπη, it is 1). The number of rotations of the substrate W and the scanning speed of the cleaning head 460 are adjusted in the circumferential direction of the substrate W. In the circumferential direction of the substrate W, droplets in the circumferential direction at the edge portion of the substrate W are formed in the same manner as in the second embodiment. If the collision interval is 1 /2 or less of the droplet diameter, that is, 1 〇 pm or less, the collision interval of the droplets in the circumferential direction closer to the inside becomes denser, and no gap is formed. The self-discharge hole 464 Continuous spit at a droplet diameter of 20 μm and a droplet velocity of 40 m/s In order to change the collision interval between the adjacent droplets that collide with the substrate w, the number of rotations of the substrate W of Φ300 mm may be 500 rpm. In the radial direction of the substrate W, the second embodiment is also used. Similarly, it is necessary to set the collision interval of the adjacent droplets to 1 μm or less. Therefore, the scanning distance of the cleaning head 46 〇 in the radial direction during the rotation of the substrate w may be 10 μm or less. The cleaning head 46 is advanced by 10 μm in the radial direction of the substrate W during one time, and the scanning speed must be set to 〇〇83 mm/s. As shown above, a single ejection hole 464 is provided on the cleaning head 46A. When the scanning speed of the cleaning head 460 is set to 〇.〇83 mm/s, 146585.doc 201104729, it takes 1800 seconds for the cleaning head 460 to move from the center portion of the substrate W to the edge portion, which is not practical. In the third embodiment, 60 discharge holes 464 are provided in a row on the cleaning head 460. Further, as shown in Fig. 20, the length of the hole row NR, which is a row of 60 discharge holes 464, is the discharge hole 464. The alignment direction is consistent with the radial direction of the substrate W Further, the length of the hole row NR is equal to the radius of the substrate W. Therefore, even if the scanning speed of the cleaning head 460 is 0.083 mm/s, the cleaning heads 460 are arranged at intervals of the discharge holes 464 along the radial direction of the substrate W. Scanning is performed so that the collision interval of adjacent droplets is 10 μm or less over the entire region in the radial direction of the substrate W. In this case, the cleaning time required in the radial direction of the substrate W is arranged according to the ejection holes 464. In the cleaning head 460 of the third embodiment, 60 discharge holes 464 are provided at intervals of 2.5 mm. Therefore, the distance between both ends of the 60 discharge holes 464, that is, the length of the hole row NR is 1 50 mm, which is equal to the radius of the substrate W of φ 300 mm. When the cleaning process is started, the cleaning head 460 is moved so that both ends of the 60 discharge holes 464 are located at the center portion and the edge portion of the substrate W, so that the cleaning head 460 is along the substrate W at a scanning speed of 0.083 mm/s. Scanning in the radial direction can shift the arrangement interval by 2.5 mm in 30 seconds, and can set the collision interval of adjacent droplets to 10 μηι or less throughout the entire radial direction of the substrate W. As described above, in the third embodiment, 60 discharge holes 464 are formed in a row at intervals of 2.5 mm on the cleaning head 460, and the arrangement of 60 discharge holes 464 and the radius of the substrate W are started when the cleaning process is started. The direction is anastomosed and the two 146585.doc -45- 201104729 are disposed in such a manner that the discharge hole 464 is located at the center portion and the end edge portion of the substrate W, so that the cleaning head 460 is moved. Then, while the speed of the substrate Wa5 is rotated, the cleaning head 460 which sets the 60 discharge holes 464 in one row is carried out in the radial direction of the substrate W at a speed of 0 〇 83 mm/s in 30 seconds. Scanning was performed, and droplets of the cleaning liquid having a diameter of 20 μm were continuously discharged from the respective discharge holes 464 at a droplet velocity of 40 m/s. Thereby, the collision interval between the droplets in the circumferential direction of the substrate W and the collision interval in the radial direction can be set to 丨/2 or less of the droplet diameter in a relatively short actual processing time of 3 sec. The droplets can be made to collide seamlessly with the entire surface of the substrate W, thereby uniformly cleaning the entire surface. <Summary of the arrangement of the discharge holes in the second embodiment and the third embodiment> In the second embodiment, the 20 discharge holes 464 are arranged in four rows on the cleaning head 460. Thus, a total of 80 discharge holes 464 are provided. In the third embodiment, 60 discharge holes 464 are arranged in a row on the cleaning head 460. Further, as described in the second embodiment, in order to allow the droplets to collide with the entire surface of the substrate W without gaps in the cleaning time allowed for the cleaning process of the actual substrate w, that is, 30 seconds. To uniformly clean, it is necessary to pass at least 60 discharge holes 464 for continuously discharging the droplets of the cleaning liquid having a fixed diameter at a fixed speed on the cleaning head 46 〇. However, when the liquid droplets are ejected from the cleaning head 460, the protective eluent is discharged from the protective rinsing nozzle 480 to the upper surface of the substrate W to form a liquid film, thereby mitigating the buffer of the droplet collision, thereby reliably preventing the substrate w. Cause damage. In the first embodiment, the plurality of discharge holes 464 are arranged in a row at a predetermined interval, and the rows NR are arranged in four rows. However, if such a plurality of discharge holes 464 are arranged in a row, 146585.doc -46 - 201104729 When the hole row NR becomes 6 rows or more, it is difficult to form a liquid film directly under the material of all the discharge holes 4. If the droplets ejected from the ejection holes 464 collide with the region where the liquid film is not formed, there is a possibility that the portion is damaged. Therefore, the number of rows of holes in which the number of rows of holes is arranged by a plurality of discharge holes 464 must be set to 5 lines or less. On the other hand, in the second embodiment, six ejection holes 464 are arranged in a single row. However, if the number of the ejection holes 464 arranged in a row exceeds six, the same is difficult for the above-described case J. A liquid film is formed directly under all the spout holes #. Further, when the number of the discharge holes 464 arranged in a row exceeds 6, it is difficult to transport the cleaning liquid from the discharge port 464 to the discharge pressure by the pressure feed pump 472 at an equal pressure. Therefore, the number of the discharge holes 464 arranged in a line must be 6 or less. According to these aspects, if the arrangement of the discharge holes 464 provided in the cleaning head 46A is summarized, it is necessary to set at least the cleaning head 46〇 from the viewpoint of shortening the cleaning processing time to the actually allowable range. 6 吐 a spit hole 464. Further, in order to form a liquid film for the protective eluent directly under all the discharge holes 464, and the cleaning liquid is supplied from the pressure feed pump 472 to the discharge holes 464 at equal pressure, the upper limit of the discharge holes 464 arranged in one line is 6 One, the upper limit of the hole line is 5 lines. In other words, the number of holes in which the six or more discharge holes 464 are arranged in a row on the cleaning head 46 is required to be 5 lines or less, and the upper limit of the total number of the discharge holes 464 is three. Therefore, the total number of the discharge holes 464 provided in the cleaning head 46A is limited to 60 or more and 3 or less. In the above, the second embodiment and the third embodiment of the present invention have been described. However, various changes may be made in addition to the above, except that the above-mentioned various modifications can be made to 146585.doc.47.201104729. For example, in the second embodiment, 20 discharge holes 464 are arranged in four rows on the cleaning head 46A. In the third embodiment, 60 earth outlet holes 464 are arranged in one row, but the discharge is provided on the cleaning head. The arrangement form of the holes is not limited to these, and may be other forms as long as it is within the above-described limit. In other words, as long as the total number of the discharge holes 464 provided in the cleaning head 460 is 60 or more and 3 or less, and the rows of holes in which one row of the discharge holes 464 are discharged are arranged in five or less rows, the cuteness is used. Arbitrary arrangement. Further, in the substrate cleaning apparatus 401 of the second and third embodiments, the cleaning liquid is supplied to the cleaning head 46A when the cleaning process is not performed, and the cleaning liquid is discharged to the outside of the apparatus, but may be configured as a circulation system. #, the piping on the downstream side of the valve 476 may be connected to the cleaning liquid supply source 471 via a filter, and the cleaning liquid from the cleaning head 460 may be returned to the cleaning liquid supply source 47. In the second and third embodiments, In the cleaning head 46, a plurality of discharge holes are formed in the cylindrical body 461 having a quadrangular prism shape, but the form of the cleaning head 460 is not limited thereto. Fig. 21 is a view showing another example of the cleaning head. The cleaning head 560 of Fig. 21 is configured such that a plurality of discharge holes 564 are formed in the wall surface of the cylindrical tubular body 560, and the piezoelectric element 562 is attached to the outer wall surface of the portion opposite to the plurality of discharge holes 564. Openings are formed at both ends of the hollow space of the cylindrical body 561. Similarly to the second and third embodiments, one end is connected to the supply occupant 470, and the other end is connected to the discharge pipe 475 (see Fig. 16). The cylindrical body 561 is formed of ceramic such as quartz or yttrium oxide. 146585.doc •48-201104729. The overall configuration of the substrate cleaning apparatus having the cylindrical cleaning head 560 is the same as that of the second embodiment. When the cleaning liquid is continuously supplied to the cleaning head 5 6 ’ to perform the cleaning process, the valve 476 is closed, whereby the cleaning liquid is discharged from the plurality of discharge holes 564. Further, when the cleaning process is performed, the piezoelectric element 562 applies vibration to the cleaning liquid inside the cylindrical body 561. Thereby, the liquid droplets of the cleaning liquid can be generated from the plurality of discharge holes 564 under the same conditions (droplet diameter 2 〇 μηι, droplet velocity 40 m/s) as in the second and third embodiments. Further, by arranging a plurality of discharge holes 564 in the same manner as in the second and third embodiments, the liquid droplets can be collided seamlessly with the entire surface of the substrate W in a relatively short actual processing time, thereby uniformly Clean the entire surface. However, if a plurality of rows of holes are provided in the cylindrical cylindrical body 561, it is difficult to uniformly maintain the distance from the discharge holes 564 to the substrate w. Therefore, when a plurality of rows of holes are provided, it is preferable to The cylindrical body 561 of 21 is set in parallel with a plurality of roots. Further, as a form of the cleaning head, a plurality of discharge holes may be provided in the cylindrical body other than the shape shown in Figs. 17 and 21, and the liquid droplets of the cleaning liquid may be ejected toward the substrate W from the plurality of discharge holes. . Further, in the third embodiment, six ejection holes 464 5 are arranged in a row on the cleaning head 46A. However, in order to prevent damage from being concentrated on the center portion of the substrate w, the ejection hole 464 may be used. The closer to the center, the smaller the aperture. Further, the substrate to be processed by the substrate cleaning apparatus of the present invention is not limited to a semiconductor substrate, and may be a glass substrate 146585.doc • 49-201104729 for a liquid crystal display device or the like. Further, the cleaning liquid is not limited to pure water, and may be an aqueous solution of a chemical for cleaning. Further, it is not limited to the pure water of the protective eluent, and may be an aqueous solution of a chemical. The protective eluent can be of the same type or different type as the cleaning solution. Further, the entire configuration of the substrate cleaning apparatus 401 is not limited to the configuration of Fig. 15. For example, a gas nozzle that discharges nitrogen gas to the substrate 1 after the cleaning process may be provided. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a substrate cleaning apparatus according to a first preferred embodiment of the present invention, which is suitable for cleaning a semiconductor substrate. Fig. 2 is a view showing a schematic configuration of a cleaning head of a substrate cleaning apparatus which is not shown. 3 is a perspective view of the cleaning head of the substrate cleaning apparatus of FIG. 1. Fig. 4 is a view showing the distribution of the droplet diameter of the cleaning liquid. Fig. 5 is a view showing the distribution of the droplet velocity of the cleaning liquid. The figure is a graph showing the relationship between the droplet diameter of the discharged droplets and the damage caused to the substrate. Fig. 7 is a graph showing the relationship between the droplet velocity of the discharged droplets and the removal rate of the pollutant. Fig. 8 is a graph showing the difference in the removal rate of the contaminant caused by the difference in the flow rate of the droplets of the discharged droplets. Fig. 9 is a view showing a substrate cleaning apparatus for performing a cleaning process including other types of substrates. 146585.doc 201104729 Figure 10 is a graph showing the distribution of droplet diameters that are not suitable for cleaning cleaning solutions containing other types of substrates. Figure π is a graph showing the distribution of droplet speeds suitable for cleaning cleaning solutions containing other types of substrates. Fig. 12 is a view showing another example of the cleaning head. Fig. 13 is a view showing another example of the cleaning head. 14(a) and 14(b) are views showing other examples of the cleaning head. Fig. 15 is a view showing the substrate cleaning apparatus of the second embodiment. Fig. 16 is a view showing a schematic configuration of a cleaning head of the substrate cleaning apparatus of Fig. 15. Figure 17 is a perspective view of the cleaning head of the substrate cleaning apparatus of Figure 15. Fig. 18 is a view showing the arrangement of the discharge holes in the second embodiment. Fig. 19 is a view showing the cleaning operation in the second embodiment. Fig. 20 is a view showing the cleaning operation in the third embodiment. Fig. 21 is a view showing another example of the cleaning head. [Description of main component symbols] 1. 401 substrate cleaning device 10, 410 rotation holding portion 11, 411 rotating base 20, 420 processing cup 30, 430 splash cover 50, 450 nozzle driving portion 60' 160, 260, 360, 460 560 cleaning head 146585.doc -51 · 201104729 61 , 161 , 261 , cylindrical body 361 , 461 , 561 62 ' 162 ' 262 , piezoelectric elements 362 , 462 , 562 64 , 164 , 264 , discharge 孑 L 364 , 464, 564 65 > 465 power supply 70 ' 470 supply piping 75 ' 475 discharge piping 76 , 476 valve 90 ' 490 control unit 111 support table 480 protective shower nozzle NR hole row W substrate 146585.doc -52-