JP2005327807A - Sheet type washing apparatus and its washing method - Google Patents

Sheet type washing apparatus and its washing method Download PDF

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JP2005327807A
JP2005327807A JP2004142533A JP2004142533A JP2005327807A JP 2005327807 A JP2005327807 A JP 2005327807A JP 2004142533 A JP2004142533 A JP 2004142533A JP 2004142533 A JP2004142533 A JP 2004142533A JP 2005327807 A JP2005327807 A JP 2005327807A
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substrate
rinsing
cleaned
nozzle
liquid
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Naoki Ogawa
直樹 小川
Isato Iwamoto
勇人 岩元
Kazumi Asada
和己 浅田
Mari Yokota
真理 横田
Yasuhiro Hinaga
康博 日永
Takeshi Nishimatsu
剛 西松
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Sony Corp
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Sony Corp
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Priority to JP2004142533A priority Critical patent/JP2005327807A/en
Priority to TW094113761A priority patent/TWI292184B/en
Priority to US11/116,353 priority patent/US20050252526A1/en
Priority to KR1020050039263A priority patent/KR20060047764A/en
Priority to CNB2005100692408A priority patent/CN100382248C/en
Publication of JP2005327807A publication Critical patent/JP2005327807A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a sheet type washing method and its washing apparatus which can reduce defects on a substrate by rapidly performing transition to rinsing treatment without being influenced by a chemical liquid component, and suppressing the residue of a polymer or a chemical liquid. <P>SOLUTION: The sheet type washing method includes a step of washing a substrate 30 to be washed with the chemical liquid 8, a rinsing liquid 14 while rotating the substrate 30 to be washed. After a nozzle 10 for the chemical liquid is moved on the substrate 30 to be washed and treated with the chemical liquid, the rinsing liquid 14 is discharged from a rinsing nozzle 16 fixed and arranged at a position free from interferring with the movement of the nozzle 10 for the chemical liquid, and the substrate 30 to be washed is treated to be rinsed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、基板を洗浄する枚葉式洗浄方法及びその実施に用いる枚葉式洗浄装置に関する。   The present invention relates to a single wafer cleaning method for cleaning a substrate and a single wafer cleaning apparatus used for the method.

例えばＬＳＩ（大規模半導体集積回路）では、その微細化により、素子の高速化、低消費電力化が進んでいる。その際、ＬＳＩの配線形成においては、配線抵抗の低減及び配線容量の確保をするために、配線に銅（Cu）を用いたり、さらに、配線間の絶縁膜に低誘電率材料である、一般的にＬｏｗ−ｋ膜と呼ばれている材料が検討されている。また、近年ではＬｏｗ−ｋ膜の低誘電率化が進んでおり、多孔質素材の開発が加速されている。
一般的に、この銅を用いる配線形成には、ダマシン（Damascene）法を用いてＬｏｗ−ｋ膜に配線形状の溝を形成し、その配線形状の溝にバリアメタル及び銅メッキ層を埋め込んだ後、表面の余分な銅メッキ層をＣＭＰ（化学機械研磨）により除去して形成している。
その配線溝作成の際のドライエッチング工程で加工残渣物（以下、ポリマーという）が発生してしまう。このポリマーを除去する目的で洗浄処理工程が行われる。近年、この洗浄処理の工程では枚葉化が進み、基板上のポリマーを剥離する薬液として有機溶剤もしくは、有機酸等の添加物を含有した有機系薬液を用い、回転するシリコン基板上に吐出させてポリマーの除去を行っている。その後、リンス液（純水を含む）によるリンス処理の工程を行うことによりシリコン基板上に残留する薬液成分を除去し、乾燥処理としてスピンによる振り切りでの乾燥を行い次工程の作業に送るのが一般的である。このような洗浄装置としては、例えば特許文献１のようにポリマー除去を目的とした枚葉式洗浄装置などが提案されている。 For example, in an LSI (Large Scale Semiconductor Integrated Circuit), device miniaturization is progressing to increase the speed and power consumption of elements. At that time, in the formation of LSI wiring, in order to reduce wiring resistance and secure wiring capacitance, copper (Cu) is used for the wiring, and furthermore, an insulating film between the wirings is a low dielectric constant material. In particular, a material called a Low-k film has been studied. In recent years, low-k films have been reduced in dielectric constant, and development of porous materials has been accelerated.
In general, for wiring formation using copper, a damascene method is used to form a wiring-shaped groove in a low-k film, and a barrier metal and a copper plating layer are embedded in the wiring-shaped groove. The excess copper plating layer on the surface is removed by CMP (chemical mechanical polishing).
A processing residue (hereinafter referred to as a polymer) is generated in the dry etching process when forming the wiring groove. A washing process is performed for the purpose of removing the polymer. In recent years, this cleaning process has progressed to single wafer processing, and an organic chemical solution containing an organic solvent or an additive such as an organic acid is used as a chemical solution for removing the polymer on the substrate, and is discharged onto a rotating silicon substrate. The polymer is removed. Thereafter, a chemical solution component remaining on the silicon substrate is removed by performing a rinsing process with a rinsing liquid (including pure water), and drying is performed by spin-off as a drying process, which is then sent to the next process. It is common. As such a cleaning apparatus, for example, a single-wafer type cleaning apparatus for the purpose of polymer removal has been proposed as disclosed in Patent Document 1.

図７は、従来の標準的な枚葉式洗浄装置の概略的な断面図、図８はその要部の平面図である。この枚葉式洗浄装置１０１は、チャンバー１３１内に、洗浄すべき基板すなわち被洗浄基板、本例ではシリコン半導体基板１３０を保持する基板保持手段１０５と、薬液１０８を吐出する薬液用ノズルを有する薬液供給手段１１２と、リンス液１１４を吐出するリンス用ノズル１１６を有するリンス供給手段１１８が設けられて成る。基板保持手段１０５は、半導体基板１３０を真空吸着で保持するための真空チャック１０６を有し、モータ１０７により回転可能に構成される。薬液供給手段１１２は、モータ１１３によって半導体基板面に平行する面内で回動し得るアーム１１１の先端に薬液用ノズル１１０を設けて構成される。リンス液供給手段１１８は、半導体基板１３０を挟んで薬液供給手段１１８と対向した位置に配置され、モータ１１９によって半導体基板面に平行する面内で回動し得るアーム１１１の先端にリンス用ノズル１１６を設けて構成される。   FIG. 7 is a schematic cross-sectional view of a conventional standard single wafer cleaning apparatus, and FIG. 8 is a plan view of an essential part thereof. This single wafer cleaning apparatus 101 has a chemical solution having a substrate to be cleaned, that is, a substrate to be cleaned, in this example, a substrate holding means 105 for holding a silicon semiconductor substrate 130 and a chemical solution nozzle for discharging the chemical solution 108 in a chamber 131. A rinsing supply means 118 having a supply means 112 and a rinsing nozzle 116 for discharging the rinsing liquid 114 is provided. The substrate holding means 105 has a vacuum chuck 106 for holding the semiconductor substrate 130 by vacuum suction, and is configured to be rotatable by a motor 107. The chemical solution supply means 112 is configured by providing a chemical solution nozzle 110 at the tip of an arm 111 that can be rotated in a plane parallel to the semiconductor substrate surface by a motor 113. The rinsing liquid supply means 118 is disposed at a position facing the chemical liquid supply means 118 with the semiconductor substrate 130 interposed therebetween, and a rinsing nozzle 116 is provided at the tip of the arm 111 that can be rotated in a plane parallel to the semiconductor substrate surface by the motor 119. Is provided.

薬液用ノズル１１０は、図８に示すように、半導体基板１３０の中心部分と半導体基板１３０の外側の待機位置間を回動するアーム１１１により破線で示す軌跡ａに沿って移動するようになされる。リンス液用ノズル１１６は、薬液用ノズル１１０と同様に、半導体基板１３０の中心部分と半導体基板１３０の外側の待機位置間を回動するアーム１１７により図８の実線で示す軌跡ｂに沿って移動するようになされる。さらに、リンス用ノズル１１６は、アーム１１７と共に、薬液用ノズル１１０と干渉しないように上下方向に移動可能になされる。   As shown in FIG. 8, the chemical solution nozzle 110 is moved along a locus a indicated by a broken line by an arm 111 that rotates between a central portion of the semiconductor substrate 130 and a standby position outside the semiconductor substrate 130. . The rinsing liquid nozzle 116 moves along a locus b indicated by a solid line in FIG. 8 by an arm 117 that rotates between the central portion of the semiconductor substrate 130 and a standby position outside the semiconductor substrate 130, similarly to the chemical liquid nozzle 110. To be made. Further, the rinsing nozzle 116 is movable in the vertical direction together with the arm 117 so as not to interfere with the chemical liquid nozzle 110.

基板保持手段１０５には、洗浄時の薬液、リンス液の排液を受けるカップ１２０が配置され、排液が排液口１２１より排液用バルブ１２２を通じてドレン１２４に排出できようになされている。チャンバー１３１には、半導体基板１３０の搬出入口１０２が開閉可能に設けられる。薬液１０８は、薬液用バルブ１０９を通じて薬液用ノズル１１０に供給される。リンス液１１４は、リンス液用バルブ１１５を通じてリンス用ノズル１１６に供給される。   The substrate holding means 105 is provided with a cup 120 for receiving the chemical liquid and the rinse liquid drained during cleaning, and the drained liquid can be discharged from the drain port 121 to the drain 124 through the drain valve 122. The chamber 131 is provided with a loading / unloading port 102 for the semiconductor substrate 130 that can be opened and closed. The chemical solution 108 is supplied to the chemical solution nozzle 110 through the chemical solution valve 109. The rinse liquid 114 is supplied to the rinse nozzle 116 through the rinse liquid valve 115.

この枚葉式洗浄装置１０１を用いて半導体基板１３０を洗浄する場合には、搬出入口１０２より洗浄処理する被洗浄基板１３０をチャンバー１３１内に搬送して、基板保持手段１０５の真空チャック１０５で基板１３０を保持する。モータ１０７を用いて半導体基板１３０を回転させた状態で、薬液供給手段１１２のアーム１１１を待機位置より回動して薬液用ノズル１１０を半導体基板１３０の中心部分に移動させ、薬液用ノズル１１０から薬液１０８を吐出させて半導体基板１３０上のポリマーを剥離する。その後、アーム１１１を回動させて薬液用ノズル１１０を待機位置に戻す。続いて、リンス液供給手段１１８のアーム１１７を待機位置より回動してリンス用ノズル１１６を半導体基板１３０の中心部分に移動し、さらにアーム１１６を降下させてリンス用ノズル１１６を半導体基板１３０上の所要位置まで移動させる。その位置でリンス用ノズル１１６からリンス液１１４、例えば純水を半導体基板１３０上に吐出してリンス処理を行う。リンス処理した後、アーム１１７を上昇させ、回動してリンス用ノズル１１６を待機位置に戻す。これによって半導体基板１３０への洗浄が完了する。   When the semiconductor substrate 130 is cleaned using the single wafer cleaning apparatus 101, the substrate 130 to be cleaned is transferred from the carry-in / out port 102 into the chamber 131, and the substrate is held by the vacuum chuck 105 of the substrate holding means 105. 130 is held. While the semiconductor substrate 130 is rotated using the motor 107, the arm 111 of the chemical solution supply means 112 is rotated from the standby position to move the chemical solution nozzle 110 to the central portion of the semiconductor substrate 130. The chemical solution 108 is discharged to peel the polymer on the semiconductor substrate 130. Thereafter, the arm 111 is rotated to return the chemical solution nozzle 110 to the standby position. Subsequently, the arm 117 of the rinsing liquid supply means 118 is rotated from the standby position to move the rinsing nozzle 116 to the central portion of the semiconductor substrate 130, and the arm 116 is further lowered to bring the rinsing nozzle 116 onto the semiconductor substrate 130. Move to the required position. At that position, a rinsing process is performed by discharging a rinsing liquid 114, for example, pure water, onto the semiconductor substrate 130 from the rinsing nozzle 116. After the rinsing process, the arm 117 is raised and rotated to return the rinsing nozzle 116 to the standby position. Thereby, the cleaning of the semiconductor substrate 130 is completed.

特開２００３−２３４３４１号公報JP 2003-234341 A

しかしながら、薬液処理の工程からリンス液処理の工程に移行する際に、薬液の吐出終了後、薬液用ノズル１１０を半導体基板１３０の中心から待機位置に移動するのに４秒間、さらに、リンス用ノズル１１６が待機位置から半導体基板１３０の中心まで移動するのに４秒間かかり、すなわち薬液１０８の吐出を終了してからリンス液１１４の吐出を開始するまで、トータル８秒間も待機する状態となっている。この各ノズル１１１及び１１６同士の干渉を避けるために移行時間が制限されてしまい、処理の移行時間中に薬液成分である有機溶剤及び有機酸等の添加物が揮発することにより、半導体基板１３０上にドライエッチング時のポリマーが除去されずに残ってしまう。あるいは、薬液からリンス処理までの移行時間が長くなると、薬液１０８が半導体基板１３０上で乾燥してしまいリンス処理の工程時でも薬液成分が除去できなくなるため、薬液残を発生してしまう。これらの問題点によって、半導体基板上に形成される半導体素子の特性に悪い影響を与えてしまい、歩留り低下を招く虞れがあった。   However, when shifting from the chemical treatment process to the rinsing liquid treatment process, after the discharge of the chemical liquid is completed, the chemical nozzle 110 is moved for 4 seconds from the center of the semiconductor substrate 130 to the standby position. It takes 4 seconds for the 116 to move from the standby position to the center of the semiconductor substrate 130, that is, for a total of 8 seconds from the end of the discharge of the chemical solution 108 to the start of the discharge of the rinse solution 114. . The transition time is limited in order to avoid interference between the nozzles 111 and 116, and the additives such as organic solvent and organic acid which are chemical components are volatilized during the transition time of the process. In addition, the polymer during dry etching remains without being removed. Or if the transition time from a chemical | medical solution to a rinse process becomes long, the chemical | medical solution 108 will dry on the semiconductor substrate 130, and since a chemical | medical solution component cannot be removed also at the time of the process of a rinse process, a chemical | medical solution residue will generate | occur | produce. These problems may adversely affect the characteristics of the semiconductor elements formed on the semiconductor substrate, leading to a decrease in yield.

本発明は、上述の点に鑑み、薬液成分に影響されずにリンス処理までの移行を速やかに行い、ポリマーや薬液の残留を抑制することにより基板上の欠陥を減らすことができる枚葉式洗浄方法及びその洗浄装置を提供するものである。   In view of the above points, the present invention is a single wafer cleaning that can quickly shift to a rinsing process without being affected by chemical components and reduce defects on the substrate by suppressing the residual polymer or chemical. A method and a cleaning apparatus thereof are provided.

本発明の枚葉式洗浄方法は、被洗浄基板を回転させながら薬液・リンス液で洗浄する枚葉式洗浄方法であって、薬液用ノズルを前記被洗浄基板上に移動して薬液処理した後、前記薬液用ノズルの移動に干渉しない位置に固定して配置したリンス用ノズルからリンス液を吐出して前記被洗浄基板をリンス処理する。   The single wafer cleaning method of the present invention is a single wafer cleaning method in which a substrate to be cleaned is rotated with a chemical / rinse solution while rotating the substrate to be cleaned. The substrate to be cleaned is rinsed by discharging a rinsing liquid from a rinsing nozzle that is fixedly arranged at a position that does not interfere with the movement of the chemical liquid nozzle.

前記リンス用ノズルを複数設け、前記複数のうちの、少なくとも１つのリンス用ノズルからのリンス液を前記被洗浄基板の中心部分に吐出し、前記他のリンス用ノズルからのリンス液を、前記被洗浄基板の半径方向の中間部分に吐出してリンス処理することが好ましい。また、前記被洗浄基板に対する薬液処理からリンス処理に移行するまでの時間Ｔは、０．５秒≦Ｔ≦１．５秒にすることが好ましい。さらに、前記リンス用ノズルから吐出するリンス液の吐出流量Ｍを、４００ｍｌ／分≦Ｍ≦１０００ｍｌ／分にすることが好ましい。前記被洗浄基板の回転数Ｎを、１５０ｒｐｍ≦Ｎ≦１０００ｒｐｍにすることが好ましい。前記リンス液は、純水または２−プロパノールを用いることが好ましい。   A plurality of the rinsing nozzles are provided, a rinsing liquid from at least one of the plurality of rinsing nozzles is discharged to a central portion of the substrate to be cleaned, and the rinsing liquid from the other rinsing nozzles It is preferable to perform a rinsing process by discharging the cleaning substrate to the intermediate portion in the radial direction. Moreover, it is preferable that the time T from the chemical treatment to the rinse treatment for the substrate to be cleaned is 0.5 seconds ≦ T ≦ 1.5 seconds. Further, the discharge flow rate M of the rinse liquid discharged from the rinsing nozzle is preferably set to 400 ml / min ≦ M ≦ 1000 ml / min. The rotation speed N of the substrate to be cleaned is preferably 150 rpm ≦ N ≦ 1000 rpm. The rinsing liquid is preferably pure water or 2-propanol.

本発明の枚葉式洗浄装置は、被洗浄基板を回転させながら薬液・リンス液で洗浄する枚葉式洗浄装置であって、前記被洗浄基板を保持して回転する基板保持手段と、待機位置と前記被洗浄基板上の中心部間を移動する薬液用ノズルと、前記薬液用ノズルの移動に干渉しない位置に固定して配置したリンス用ノズルとを備える。   The single wafer cleaning apparatus of the present invention is a single wafer cleaning apparatus for cleaning with a chemical solution or a rinsing liquid while rotating the substrate to be cleaned, the substrate holding means for holding and rotating the substrate to be cleaned, and a standby position. And a chemical solution nozzle that moves between the central portions of the substrate to be cleaned, and a rinse nozzle that is fixedly disposed at a position that does not interfere with the movement of the chemical solution nozzle.

前記リンス用ノズルが複数設けられ、前記複数のうちの少なくとも１つのリンス用ノズルが、前記被洗浄基板の中心部に向けて配置され、前記他方のリンス用ノズルが、前記被洗浄基板の半径方向の中間部分に向けて配置されることが好ましい。また、前記被洗浄基板に対する薬液処理からリンス処理に移行する時間Ｔが、０．５秒≦Ｔ≦１．５秒であることが好ましい。前記リンス用ノズルから吐出するリンス液の吐出流量Ｍが、４００ｍｌ／分≦Ｍ≦１０００ｍｌ／分であることが好ましい。前記被洗浄基板の回転数Ｎが、１５０ｒｐｍ≦Ｎ≦１０００ｒｐｍであることが好ましい。前記リンス液は、純水または２−プロパノールであることが好ましい。   A plurality of the rinsing nozzles are provided, and at least one of the plurality of rinsing nozzles is disposed toward the center of the substrate to be cleaned, and the other rinsing nozzle is in a radial direction of the substrate to be cleaned. It is preferable to arrange | position toward the intermediate part. Moreover, it is preferable that the time T for shifting from the chemical treatment to the rinse treatment for the substrate to be cleaned is 0.5 seconds ≦ T ≦ 1.5 seconds. It is preferable that the discharge flow rate M of the rinse liquid discharged from the rinsing nozzle is 400 ml / min ≦ M ≦ 1000 ml / min. The rotation speed N of the substrate to be cleaned is preferably 150 rpm ≦ N ≦ 1000 rpm. The rinsing liquid is preferably pure water or 2-propanol.

本発明の枚葉式洗浄方法では、薬液用ノズルを被洗浄基板上に移動して薬液処理した後、薬液用ノズルの移動に干渉しない位置に固定して配置したリンス用ノズルからリンス液を吐出して被洗浄基板をリンス処理することにより、薬液吐出後、リンス液の吐出開始までの時間を縮めることができる。これにより、薬液成分の揮発が抑えられ、被洗浄基板上の有機残渣物が除去される。また、移行時間が短縮されるので、薬液残による欠陥の増殖を防ぐことができる。   In the single wafer cleaning method of the present invention, after the chemical solution nozzle is moved onto the substrate to be cleaned and the chemical solution is processed, the rinse solution is discharged from the rinse nozzle that is fixed and arranged at a position that does not interfere with the movement of the chemical solution nozzle. By rinsing the substrate to be cleaned, it is possible to shorten the time from the start of the chemical solution discharge to the start of the rinse liquid discharge. Thereby, volatilization of the chemical component is suppressed and the organic residue on the substrate to be cleaned is removed. Moreover, since the transition time is shortened, it is possible to prevent the growth of defects due to the remaining chemical solution.

本発明の枚葉式洗浄装置では、薬液用ノズルの移動に干渉しない位置に固定してリンス用ノズルを設けるため、薬液吐出後、リンス液の吐出開始までの時間を縮めることができる。この薬液処理とリンス処理の移行時間の短縮により、薬液成分の揮発を抑え、被洗浄基板上の有機残渣物の良好な除去を可能にし、また、薬液残による欠陥の増殖を防ぐことができる。   In the single wafer cleaning apparatus of the present invention, since the rinsing nozzle is provided in a position that does not interfere with the movement of the chemical liquid nozzle, the time from the discharge of the chemical liquid to the start of the discharge of the rinsing liquid can be shortened. By shortening the transition time between the chemical treatment and the rinsing treatment, volatilization of the chemical components can be suppressed, organic residues on the substrate to be cleaned can be favorably removed, and the growth of defects due to the chemical residue can be prevented.

本発明の枚葉式洗浄方法によれば、被洗浄基板に対する洗浄を確実に行うことができ、基板洗浄の歩留り、さらに、この基板を用いて作製した製品の歩留りを向上することができる。また、基板洗浄の信頼性を向上することができる。   According to the single wafer cleaning method of the present invention, it is possible to reliably clean the substrate to be cleaned, and to improve the yield of substrate cleaning, and further, the yield of products manufactured using this substrate. Moreover, the reliability of substrate cleaning can be improved.

リンス用ノズルを複数設け、少なくとも１つのリンス用ノズルからのリンス液を被洗浄基板の中心部分に吐出し、他のリンス用ノズルからのリンス液を被洗浄基板の半径方向の中間部分に吐出することにより、リンス液を被洗浄基板の表面全域に均一に供給することができる。
被洗浄基板に対する薬液処理からリンス処理に移行するまでの時間Ｔを０．５秒〜１．５秒にすることにより、移行時間が大幅に短縮され、良好な洗浄を行うことができる。
リンス用ノズルから吐出するリンス液の吐出流量Ｍを、４００ｍｌ／分〜１０００ｍｌ／分にすることにより、有機残渣物の数（いわゆる欠陥数）を低減することができる。
被洗浄基板の回転数Ｎを１５０ｒｐｍ〜１０００ｒｐｍにすることにより、有機残渣物の数（いわゆる欠陥数）を低減することができる。
リンス液として、純水または２ープロパノールを用いることにより、リンス処理を良好に行うことができる。 A plurality of rinsing nozzles are provided, the rinsing liquid from at least one rinsing nozzle is discharged to the central portion of the substrate to be cleaned, and the rinsing liquid from other rinsing nozzles is discharged to the intermediate portion in the radial direction of the substrate to be cleaned. As a result, the rinse liquid can be supplied uniformly over the entire surface of the substrate to be cleaned.
By setting the time T from the chemical treatment to the rinse treatment for the substrate to be cleaned to 0.5 seconds to 1.5 seconds, the transition time is greatly shortened, and good cleaning can be performed.
By setting the discharge flow rate M of the rinsing liquid discharged from the rinsing nozzle to 400 ml / min to 1000 ml / min, the number of organic residues (so-called number of defects) can be reduced.
By setting the rotation speed N of the substrate to be cleaned to 150 rpm to 1000 rpm, the number of organic residues (so-called defect number) can be reduced.
By using pure water or 2-propanol as the rinsing liquid, the rinsing treatment can be performed satisfactorily.

本発明の枚葉式洗浄装置によれば、被洗浄基板に対する洗浄処理を確実に行うことができる。したがって、基板洗浄の歩留りや信頼性を向上することができる。   According to the single wafer cleaning apparatus of the present invention, it is possible to reliably perform the cleaning process on the substrate to be cleaned. Therefore, the yield and reliability of substrate cleaning can be improved.

リンス用ノズルを複数設け、少なくとも１つのリンス用ノズルを被洗浄基板の中心部分に向けて配置し、他のリンス用ノズルを被洗浄基板の半径方向の中間部分に向けて配置することのより、リンス液を被洗浄基板の表面全域に均一に供給することができ、リンス処理を良好にする。
被洗浄基板に対する薬液処理からリンス処理に移行するまでの時間Ｔを０．５秒〜１．５秒に設定することにより、移行時間を大幅に短縮し、良好な洗浄を行うことができる。
リンス用ノズルから吐出するリンス液の吐出流量Ｍを、４００ｍｌ／分〜１０００ｍｌ／分に設定することにより、有機残渣物の数（いわゆる欠陥数）を低減することができる。
被洗浄基板の回転数Ｎを１５０ｒｐｍ〜１０００ｒｐｍに設定することにより、有機残渣物の数（いわゆる欠陥数）を低減することができる。
リンス液として、純水または２ープロパノールを用いることにより、良好なリンス処理を可能にする。 By providing a plurality of rinsing nozzles, disposing at least one rinsing nozzle toward the central portion of the substrate to be cleaned, and disposing other rinsing nozzles toward the intermediate portion in the radial direction of the substrate to be cleaned. The rinsing liquid can be supplied uniformly over the entire surface of the substrate to be cleaned, and the rinsing process is improved.
By setting the time T from the chemical treatment to the rinse treatment for the substrate to be cleaned to 0.5 seconds to 1.5 seconds, the transition time can be greatly shortened and good cleaning can be performed.
By setting the discharge flow rate M of the rinsing liquid discharged from the rinsing nozzle to 400 ml / min to 1000 ml / min, the number of organic residues (so-called defect number) can be reduced.
By setting the rotation speed N of the substrate to be cleaned to 150 rpm to 1000 rpm, the number of organic residues (so-called defect number) can be reduced.
By using pure water or 2-propanol as the rinsing liquid, a good rinsing treatment is possible.

以下、図面を参照して本発明の実施の形態を説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図１は、本発明に係る枚葉式洗浄装置の一実施の形態を示す概略構成図である。図２Ａ，Ｂは、図１の要部の平面図及びその側面図である。
チャンバー３１内に、洗浄すべき基板すなわち被洗浄基板、本例ではシリコン半導体基板３０を保持する基板保持手段５と、薬液８を吐出する薬液用ノズルを有する薬液供給手段１２と、リンス液１４を吐出するリンス用ノズル１６を有するリンス供給手段１８が設けられて成る。基板保持手段５は、半導体基板３０を真空吸着で保持するための真空チャック６を有し、モータ７により回転可能に構成される。薬液供給手段１２は、モータ１３によって半導体基板面に平行する面内で回動し得るアーム１１の先端に薬液用ノズル１０を設けて構成される。薬液用ノズル１０は、図２Ａに示すように、半導体基板３０の中心部分と半導体基板３０の外側の待機位置間を回動するアーム１１により破線で示す軌跡ａに沿って移動するようになされる（図２Ａ参照）。
リンス液供給手段１８は、複数、本例では２つのリンス用ノズル１６［１６Ａ，１６Ｂ］を有する。この２つのリンス用ノズル１６［１６Ａ，１６Ｂ］は、薬液用ノズル１０の移動に干渉しない位置、すなわち洗浄すべき半導体基板３０の外側に位置に固定して配置される。２つのリンス用ノズル１６のうち、一方のリンス用ノズル１６Ａは、半導体基板３０の中央部分に向けて配置され、他方のリンス用ノズル１６Ｂは、半導体基板３０の半径方向の中間部分に向けて配置される（図２Ａ参照）。リンス用ノズル１６Ｂは、例えば半径方向の約１／２の中間部分に向けて配置することができる。８インチ及び１０インチの半導体基板の場合には、リンス用ノズル１６Ｂは、半径方向に基板中心より１２０ｍｍ〜１７０ｍの位置に向けて配置することができる。また、両リンス用ノズル１６［１６Ａ，１６Ｂ］は、半導体基板３０に対する吐出角度θ１が３０°以上、５０°以下となるように配置される（図２Ｂ参照）。リンス用ノズル１６の本数は、リンス処理の効率によって、さらに２本以上設けてもよい。また、１本のリンス用ノズルのみ配置することも可能である。 FIG. 1 is a schematic configuration diagram showing an embodiment of a single wafer cleaning apparatus according to the present invention. 2A and 2B are a plan view and a side view of the main part of FIG.
In the chamber 31, a substrate holding means 5 for holding a substrate to be cleaned, that is, a substrate to be cleaned, in this example, a silicon semiconductor substrate 30, a chemical solution supply means 12 having a chemical solution nozzle for discharging the chemical solution 8, and a rinse solution 14 are provided. A rinse supply means 18 having a rinse nozzle 16 for discharging is provided. The substrate holding means 5 has a vacuum chuck 6 for holding the semiconductor substrate 30 by vacuum suction, and is configured to be rotatable by a motor 7. The chemical solution supply means 12 is configured by providing a chemical solution nozzle 10 at the tip of an arm 11 that can be rotated by a motor 13 in a plane parallel to the semiconductor substrate surface. As shown in FIG. 2A, the chemical solution nozzle 10 is moved along a locus a indicated by a broken line by an arm 11 that rotates between a central portion of the semiconductor substrate 30 and a standby position outside the semiconductor substrate 30. (See FIG. 2A).
The rinsing liquid supply means 18 has a plurality of rinsing nozzles 16 [16A, 16B] in this example. These two rinsing nozzles 16 [16A, 16B] are fixedly arranged at positions that do not interfere with the movement of the chemical solution nozzle 10, that is, outside the semiconductor substrate 30 to be cleaned. Of the two rinsing nozzles 16, one rinsing nozzle 16 </ b> A is disposed toward the central portion of the semiconductor substrate 30, and the other rinsing nozzle 16 </ b> B is disposed toward the intermediate portion in the radial direction of the semiconductor substrate 30. (See FIG. 2A). The rinsing nozzle 16B can be arranged, for example, toward an intermediate portion of about ½ in the radial direction. In the case of 8-inch and 10-inch semiconductor substrates, the rinsing nozzle 16B can be arranged in a radial direction from 120 mm to 170 m from the substrate center. The two rinsing nozzles 16 [16A, 16B] are arranged so that the discharge angle θ1 with respect to the semiconductor substrate 30 is 30 ° or more and 50 ° or less (see FIG. 2B). Two or more rinse nozzles 16 may be provided depending on the efficiency of the rinse treatment. It is also possible to arrange only one rinsing nozzle.

基板保持手段５には、洗浄時の薬液、リンス液の排液を受けるカップ２０が配置され、排液が排液口２１より排液用バルブ２２を通じてドレン２４に排出できようになされている。チャンバー３１には、半導体基板３０の搬出入口２が開閉可能に設けられる。薬液８は、薬液用バルブ９を通じて薬液用ノズル１０に供給される。リンス液１４は、リンス液用バルブ１５を通じてリンス用ノズル１６［１６Ａ，１６Ｂ］に供給される。   The substrate holding means 5 is provided with a cup 20 for receiving a chemical solution and a rinsing liquid drainage at the time of cleaning, and the drainage liquid can be discharged from a drainage port 21 to a drain 24 through a drainage valve 22. In the chamber 31, the carry-in / out port 2 for the semiconductor substrate 30 is provided so as to be openable and closable. The chemical solution 8 is supplied to the chemical solution nozzle 10 through the chemical solution valve 9. The rinsing liquid 14 is supplied to the rinsing nozzles 16 [16A, 16B] through the rinsing liquid valve 15.

次に、上述の本実施の形態に係る枚葉式洗浄装置１を用いて基板を洗浄する洗浄方法について説明する。本例では、シリコン基板上に配線パターンを形成してドライエッチング処理しレジストマスクを剥離除去した後の、基板上に加工残渣物（ポリマー）が発生した半導体基板３０の洗浄に適用した場合である。   Next, a cleaning method for cleaning a substrate using the single wafer cleaning apparatus 1 according to the above-described embodiment will be described. In this example, a wiring pattern is formed on a silicon substrate, dry etching is performed, and the resist mask is peeled and removed, and then applied to cleaning the semiconductor substrate 30 in which a processing residue (polymer) is generated on the substrate. .

先ず、ポリマーや残留物等の付いた基板３０を搬出入口２からチャンバー３１内に搬入し、基板保持手段５の真空チャック６上に真空吸着して保持する。待機位置からモータ１３を駆動させてアーム１１を回動し、薬液用ノズル１０を基板３０上中心部に移動させる。   First, the substrate 30 with a polymer, a residue, etc. is carried into the chamber 31 from the carry-in / out entrance 2 and is vacuum-sucked and held on the vacuum chuck 6 of the substrate holding means 5. The motor 13 is driven from the standby position to rotate the arm 11 and move the chemical solution nozzle 10 to the center of the substrate 30.

次に、基板３０をモータ７で回転させつつ、薬液用ノズル１０から薬液８を吐出して半導体基板上３０のポリマー残渣の除去を行う。例えば、薬液には、有機溶剤もしくは有機酸等の添加物を含有した有機系薬液を用いる。   Next, while the substrate 30 is rotated by the motor 7, the chemical solution 8 is discharged from the chemical solution nozzle 10 to remove the polymer residue on the semiconductor substrate 30. For example, an organic chemical solution containing an additive such as an organic solvent or an organic acid is used as the chemical solution.

次に、薬液８による洗浄処理を終了する。終了後、薬液用ノズル１１が、アーム１１を介して待機位置へ回動し始めると同時に、リンス用ノズル１６〔１６Ａ，１６Ｂ〕からリンス液１４を回転する基板３０上に吐出してリンス処理を行う。一方のリンス用ノズル１６Ａからのリンス液は、基板３０の中央部分に供給され、他方のリンス用ノズル１６Ｂからのリンス液は、基板３０の半径方向の中間部分に供給される。この場合、薬液用ノズル１０からの薬液８の吐出が終了して、リンス液１４がリンス用ノズル１６から吐出開始されるまでの時間Ｔは、０．５秒〜１．５秒の短時間で切り替えられる。このリンス液１４の吐出流量Ｍとしては、４００ｍｌ／分〜１０００ｍｌ／分とする。理由は後述する。リンス用ノズル１６［１６Ａ、１６Ｂ］から均一に吐出される。さらに、リンス処理時の基板３０の回転数Ｎは、１５０ｒｐｍ〜１０００ｒｐｍとする。リンス液１４としては、純水（冷水、温水等）を用いる。また、上述の薬液処理時の基板３０の回転数も１５０ｒｐｍ〜１０００ｒｐｍとする。   Next, the cleaning process using the chemical 8 is finished. After the completion, the chemical solution nozzle 11 starts to rotate to the standby position via the arm 11, and at the same time, the rinsing liquid 14 is discharged from the rinsing nozzle 16 [16A, 16B] onto the rotating substrate 30 to perform the rinsing process. Do. The rinsing liquid from one rinsing nozzle 16 </ b> A is supplied to the central portion of the substrate 30, and the rinsing liquid from the other rinsing nozzle 16 </ b> B is supplied to an intermediate portion in the radial direction of the substrate 30. In this case, the time T from the end of the discharge of the chemical solution 8 from the chemical solution nozzle 10 to the start of the discharge of the rinse liquid 14 from the rinse nozzle 16 is a short time of 0.5 seconds to 1.5 seconds. Can be switched. The discharge flow rate M of the rinse liquid 14 is 400 ml / min to 1000 ml / min. The reason will be described later. The rinsing nozzles 16 [16A, 16B] are uniformly discharged. Furthermore, the rotation speed N of the substrate 30 during the rinsing process is set to 150 rpm to 1000 rpm. As the rinsing liquid 14, pure water (cold water, hot water, etc.) is used. Further, the number of rotations of the substrate 30 at the time of the chemical solution treatment is also set to 150 rpm to 1000 rpm.

本実施の形態の枚葉式洗浄装置を用いた基板洗浄方法によれば、リンス用ノズル１６Ａ及び１６Ｂを基板３０の外側位置に固定して設置することにより、薬液用ノズル１０とリンス用ノズル１６の移動によるノズル同士の干渉がなくなるため、薬液処理とリンス処理との移行時間を早くすることが可能になる。すなわち、移行時間Ｔを０．５秒〜１．５秒の短時間とすることが可能になる。したがって、薬液残の乾燥を防ぐことができ、基板上の欠陥（ポリマー残り）を減らすことができる。さらに、リンス液の流量、基板の回転数及びリンス液を最適条件とすることで、より欠陥の数を減少させることができる。基板に付着していたポリマー及び薬液の残留物をきれいに洗浄除去することができる。
８インチ及び１０インチの半導体基板の場合には、リンス用ノズル１６Ｂは、半径方向に基板中心より１２０ｍｍ〜１７０ｍの位置に向けて配置し、また、両リンス用ノズル１６［１６Ａ，１６Ｂ］は、半導体基板３０に対する吐出角度θ１が３０°以上、５０°以下となるように配置されるが、逆に、この範囲を越えた場合は、リンスするリンス液の基板上の広がりが確保できなくなり、リンス処理の効率が低下してしまう。 According to the substrate cleaning method using the single wafer cleaning apparatus of the present embodiment, the rinsing nozzles 16A and 16B are fixedly installed on the outer side of the substrate 30 to thereby provide the chemical solution nozzle 10 and the rinsing nozzle 16. Since there is no interference between the nozzles due to the movement, the transition time between the chemical treatment and the rinse treatment can be shortened. That is, the transition time T can be shortened to 0.5 seconds to 1.5 seconds. Therefore, drying of the chemical solution residue can be prevented, and defects (polymer residue) on the substrate can be reduced. Furthermore, the number of defects can be further reduced by setting the flow rate of the rinse liquid, the number of rotations of the substrate, and the rinse liquid as the optimum conditions. It is possible to cleanly remove the polymer and chemical liquid residues adhering to the substrate.
In the case of 8-inch and 10-inch semiconductor substrates, the rinsing nozzle 16B is arranged in a radial direction at a position of 120 mm to 170 m from the center of the substrate, and both rinsing nozzles 16 [16A, 16B] Although the discharge angle θ1 with respect to the semiconductor substrate 30 is arranged to be 30 ° or more and 50 ° or less, conversely, if this range is exceeded, the spread of the rinse liquid to be rinsed on the substrate cannot be secured, and the rinse is performed. Processing efficiency is reduced.

次に、図３〜図６を用いて、本実施の形態の洗浄方法と欠陥数の低減の関係について説明する。以下、縦軸は、相対数で示す。
図３は、従来の洗浄装置１０１を用いて洗浄した物をノズル無しとし、本実施の形態に係る洗浄装置１を用いて洗浄した物をノズル有りとするときの欠陥数の関係を示すグラフである。
従来の洗浄方法では、欠陥数が多かったが、本実施の形態に係る枚葉式洗浄装置を用いた洗浄方法では欠陥数を減らすことができる。 Next, the relationship between the cleaning method of the present embodiment and the reduction in the number of defects will be described with reference to FIGS. Hereinafter, the vertical axis represents a relative number.
FIG. 3 is a graph showing the relationship between the number of defects when an object cleaned using the conventional cleaning apparatus 101 has no nozzle and an object cleaned using the cleaning apparatus 1 according to the present embodiment has a nozzle. is there.
In the conventional cleaning method, the number of defects is large, but in the cleaning method using the single wafer cleaning apparatus according to the present embodiment, the number of defects can be reduced.

図４は、薬液の吐出終了からリンス液の吐出開始までの移行時間と欠陥数の関係を示すグラフである。
本実施の形態に係る枚葉式洗浄装置１の薬液の吐出終了からリンス液の吐出開始までの移行時間が０．５秒から１．５秒の間では欠陥数がもっとも少なく。移行時間が、１．５を超えると欠陥数が増加する。移行時間が０．５秒より短いと、薬液の吐出を終了してリンス液を吐出開始することが困難である。薬液の吐出終了からリンス液の吐出開始までの移行時間が、０．５秒以上１．５秒以下であれば、基板上の薬液残が乾燥することなく洗浄の効果を向上することができる。基板上の欠陥数を減少させることができ、歩留りの向上を図ることができる。 FIG. 4 is a graph showing the relationship between the transition time from the end of discharge of the chemical liquid to the start of discharge of the rinse liquid and the number of defects.
The number of defects is the smallest when the transition time from the end of the discharge of the chemical solution to the start of the discharge of the rinse liquid in the single wafer cleaning apparatus 1 according to the present embodiment is between 0.5 seconds and 1.5 seconds. When the transition time exceeds 1.5, the number of defects increases. If the transition time is shorter than 0.5 seconds, it is difficult to end the discharge of the chemical liquid and start the discharge of the rinse liquid. If the transition time from the end of the discharge of the chemical liquid to the start of the discharge of the rinse liquid is 0.5 seconds or more and 1.5 seconds or less, the cleaning effect can be improved without drying the chemical liquid residue on the substrate. The number of defects on the substrate can be reduced, and the yield can be improved.

図５は、本実施の形態に係る枚葉式洗浄装置のリンス液の吐出流量と欠陥数の関係を示すグラフである。
本実施の形態に係る枚葉式洗浄装置１のリンス用ノズル１６［１６Ａ、１６Ｂ］から均一に吐出されるリンス液の吐出流量が、４００ｍｌ／分〜１０００ｍｌ／分の範囲内であると欠陥数をもっとも減らすことができる。リンス液の吐出流量が４００ｍｌ／分より少なくなると欠陥数が増加してしまう。吐出流量が１０００ｍｌ／分より多い場合、リンス液を大量に消費するため、原材料費が増加してしまう。リンス処理の処理時間は確実に洗浄を完了させるために６０秒〜９０秒での処理が望ましい。 FIG. 5 is a graph showing the relationship between the discharge flow rate of the rinse liquid and the number of defects in the single wafer cleaning apparatus according to the present embodiment.
The number of defects when the discharge flow rate of the rinsing liquid uniformly discharged from the rinsing nozzles 16 [16A, 16B] of the single wafer cleaning apparatus 1 according to the present embodiment is in the range of 400 ml / min to 1000 ml / min. Can be reduced the most. If the discharge flow rate of the rinsing liquid is less than 400 ml / min, the number of defects increases. When the discharge flow rate is higher than 1000 ml / min, the rinsing liquid is consumed in a large amount, so that the raw material cost increases. The treatment time for the rinsing process is preferably 60 seconds to 90 seconds in order to reliably complete the cleaning.

図６は、本実施の形態に係る枚葉式洗浄装置の基板の回転数と欠陥数の関係を示すグラフである。
本実施の形態に係る枚葉式洗浄装置１の基板保持手段の真空チャックによって基板３０は保持され、回転手段のモータ７によって回転させている。基板３０の回転は、薬液用ノズル１０から薬液が吐出開始されてから、リンス用ノズル１６からリンス液の吐出終了まで回転し続けている。
基板の回転数が、１５０ｒｐｍ〜１０００ｒｐｍの範囲内のときがもっとも欠陥数を減少させることができる。すなわち、リンス処理を確実に行うことができる。基板回転数が１５０ｒｐｍより少なくなると欠陥数の増加する。また、基板の回転数が１０００ｒｐｍより速くなると欠陥数の増加が顕著に表われる。
なお、リンス液は純水に限らず、例えば、２−プロパノール（ＩＰＡ）を用いて、その後、純水でリンス処理を行うことでも同様の効果が得られる。 FIG. 6 is a graph showing the relationship between the number of rotations of the substrate and the number of defects in the single wafer cleaning apparatus according to the present embodiment.
The substrate 30 is held by the vacuum chuck of the substrate holding means of the single wafer cleaning apparatus 1 according to the present embodiment, and is rotated by the motor 7 of the rotating means. The rotation of the substrate 30 continues from the start of the discharge of the chemical solution from the chemical solution nozzle 10 to the end of the discharge of the rinse solution from the rinse nozzle 16.
The number of defects can be reduced most when the number of rotations of the substrate is in the range of 150 rpm to 1000 rpm. That is, the rinsing process can be performed reliably. When the substrate rotation speed is less than 150 rpm, the number of defects increases. Further, when the number of rotations of the substrate becomes faster than 1000 rpm, the number of defects increases remarkably.
The rinse liquid is not limited to pure water. For example, the same effect can be obtained by using 2-propanol (IPA) and then rinsing with pure water.

上述したように、本実施の形態の枚葉洗浄方法及び洗浄装置を用いることにより、基板上にドライエッチング時の加工残渣物のポリマーを良好に洗浄除去することができる。従って、例えば半導体装置の製造における半導体基板の洗浄に適用した場合、その洗浄を確実に行え、洗浄歩留りを向上することができる。このことは、最終的に製造される半導体装置の製造歩留りを向上し、信頼性を向上することができる。   As described above, by using the single wafer cleaning method and the cleaning apparatus of the present embodiment, it is possible to satisfactorily clean and remove the polymer of the processing residue during dry etching on the substrate. Therefore, for example, when applied to the cleaning of a semiconductor substrate in the manufacture of a semiconductor device, the cleaning can be performed reliably and the cleaning yield can be improved. This can improve the manufacturing yield of the semiconductor device to be finally manufactured and improve the reliability.

上例では、本発明の洗浄方法を半導体基板の洗浄に適用したが、液晶表示装置用ガラス基板、フォトマスク用ガラス基板、光ディスク用基板等の洗浄にも適用できる。   In the above example, the cleaning method of the present invention is applied to cleaning of a semiconductor substrate, but it can also be applied to cleaning of a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk, and the like.

本発明に係る枚葉式洗浄装置の一実施の形態を示す構成図である。It is a block diagram which shows one Embodiment of the single wafer type washing | cleaning apparatus which concerns on this invention. Ａ 図１の要部を示す平面図である。 Ｂ 図２Ａの側面図である。A is a plan view showing a main part of FIG. B is a side view of FIG. 2A. 従来のリンス用ノズルと本発明に係る枚葉式洗浄装置のリンス用ノズルを用いるときの欠陥数を比較したグラフである。It is the graph which compared the number of defects when using the nozzle for rinse of the conventional rinse nozzle and the rinse nozzle of the single wafer type washing | cleaning apparatus which concerns on this invention. 薬液の吐出終了後からリンス液の吐出開始までの移行時間と欠陥数の関係を示すグラフである。It is a graph which shows the relationship between the transition time after the completion | finish of discharge of a chemical | medical solution, and the discharge start of a rinse liquid, and the number of defects. 本発明に係る枚葉式洗浄装置のリンス液の吐出流量と欠陥数の関係を示すグラフである。It is a graph which shows the relationship between the discharge flow volume of the rinse liquid of the single wafer type cleaning apparatus which concerns on this invention, and the number of defects. 本発明に係る枚葉式洗浄装置のリンス液の吐出流量と欠陥数の関係を示すグラフである。It is a graph which shows the relationship between the discharge flow volume of the rinse liquid of the single wafer type cleaning apparatus which concerns on this invention, and the number of defects. 従来の枚葉式洗浄装置を示す構成図である。It is a block diagram which shows the conventional single wafer type washing | cleaning apparatus. 図７の要部を示す平面図である。It is a top view which shows the principal part of FIG.

符号の説明Explanation of symbols

１・・枚葉式洗浄装置、２・・搬出入口、３・・シャッター、５・・基板保持手段、６・・チャック、７・・モータ、８・・薬液、９・・薬液用バルブ、１０・・薬液用ノズル、１１・・アーム、１２・・薬液供給手段、１３・・モータ、１４・・リンス液、１５・・リンス用バルブ、１６・・リンス用ノズル、１８・・リンス液供給手段、２０・・カップ、２１・・排液口、２２・・排液用バルブ、２４・・ドレン、３０・・基板、３１・・チャンバー、１０２・・搬出入口、１０５・・基板保持手段、１０６・・真空チャック、１０７・・モータ、１０８・・薬液、１０９・・薬液用バルブ、１１０・・薬液用ノズル、１１１・・アーム、１１２・・薬液供給手段、１１３・・モータ、１１４・・リンス液、１１５・・リンス用バルブ、１１６・・リンス用ノズル、１１７・・アーム、１１８・・リンス液供給手段、１１９・・モータ、１２０・・カップ、１２１・・排液口、１２２・・排液用バルブ、１２４・・ドレン、１３０・・基板、１３１・・チャンバー   1 .... Single wafer cleaning device, 2 .... Outlet / inlet, 3 .... Shutter, 5 .... Substrate holding means, 6 .... Chuck, 7 .... Motor, 8 .... Chemical solution, 9 .... Chemical solution valve, 10. ..Nozzle for chemical liquid, 11 .. Arm, 12 ..Mechanical liquid supply means, 13 ..Motor, 14 ..Rinse liquid, 15 ..Rinse valve, 16 ..Rinse nozzle, 18. , 20 .. Cup, 21 .. drainage port, 22 .. drainage valve, 24 .. drain, 30 .. substrate, 31 .. chamber, 102 .. loading / unloading port, 105 .. substrate holding means, 106 ..Vacuum chuck, 107 ..Motor, 108 ..Chemical liquid, 109 ..Chemical liquid valve, 110 ..Chemical liquid nozzle, 111 ..Arm, 112 ..Chemical liquid supply means, 113. Liquid, 115 · Rinse valve, 16 .... Rinsing nozzle, 117 ... Arm, 118 ... Rinsing liquid supply means, 119 ... Motor, 120 ... Cup, 121 ... Drain port, 122 ... Drain valve, 124 ... Drain, 130 ... Board, 131 ... Chamber

Claims (12)

被洗浄基板を回転させながら薬液・リンス液で洗浄する枚葉式洗浄方法であって、
薬液用ノズルを前記被洗浄基板上に移動して薬液処理した後、
前記薬液用ノズルの移動に干渉しない位置に固定して配置したリンス用ノズルからリンス液を吐出して前記被洗浄基板をリンス処理する
ことを特徴とする枚葉式洗浄方法。 A single wafer cleaning method in which a substrate to be cleaned is cleaned with a chemical solution or a rinse solution while rotating the substrate to be cleaned.
After moving the chemical nozzle on the substrate to be cleaned and processing the chemical,
A single wafer cleaning method, wherein the substrate to be cleaned is rinsed by discharging a rinsing liquid from a rinsing nozzle that is fixedly disposed at a position that does not interfere with the movement of the chemical liquid nozzle. 前記リンス用ノズルを複数設け、
前記複数のうちの、少なくとも１つのリンス用ノズルからのリンス液を前記被洗浄基板の中心部分に吐出し、
前記他のリンス用ノズルからのリンス液を、前記被洗浄基板の半径方向の中間部分に吐出してリンス処理する
ことを特徴とする請求項１記載の枚葉式洗浄方法。 A plurality of the rinsing nozzles are provided,
Discharging a rinsing liquid from at least one rinsing nozzle of the plurality to the central portion of the substrate to be cleaned;
The single wafer cleaning method according to claim 1, wherein a rinsing process is performed by discharging a rinsing liquid from the other rinsing nozzle to an intermediate portion in a radial direction of the substrate to be cleaned. 前記被洗浄基板に対する薬液処理からリンス処理に移行するまでの時間Ｔは、０．５秒≦Ｔ≦１．５秒にする
ことを特徴とする請求項１記載の枚葉式洗浄方法。 2. The single wafer cleaning method according to claim 1, wherein the time T from the chemical treatment to the rinse treatment for the substrate to be cleaned is 0.5 seconds ≦ T ≦ 1.5 seconds. 前記リンス用ノズルから吐出するリンス液の吐出流量Ｍを、４００ｍｌ／分≦Ｍ≦１０００ｍｌ／分にする
ことを特徴とする請求項１記載の枚葉式洗浄方法。 The single wafer cleaning method according to claim 1, wherein a discharge flow rate M of the rinsing liquid discharged from the rinsing nozzle is set to 400 ml / min ≦ M ≦ 1000 ml / min. 前記被洗浄基板の回転数Ｎを、１５０ｒｐｍ≦Ｎ≦１０００ｒｐｍにする
ことを特徴とする請求項１記載の枚葉式洗浄方法。 The single wafer cleaning method according to claim 1, wherein the rotation speed N of the substrate to be cleaned is 150 rpm ≦ N ≦ 1000 rpm. 前記リンス液は、純水または２−プロパノールを用いる
ことを特徴とする請求項１記載の枚葉式洗浄方法。 2. The single wafer cleaning method according to claim 1, wherein the rinsing liquid uses pure water or 2-propanol. 被洗浄基板を回転させながら薬液・リンス液で洗浄する枚葉式洗浄装置であって、
前記被洗浄基板を保持して回転する基板保持手段と、待機位置と前記被洗浄基板上の中心部間を移動する薬液用ノズルと、
前記薬液用ノズルの移動に干渉しない位置に固定して配置したリンス用ノズルとを備える
ことを特徴とする枚葉式洗浄装置。 A single wafer cleaning device for cleaning with a chemical solution or a rinsing solution while rotating a substrate to be cleaned,
Substrate holding means that holds and rotates the substrate to be cleaned, a chemical solution nozzle that moves between a standby position and a central portion on the substrate to be cleaned,
A single-wafer cleaning apparatus, comprising: a rinsing nozzle fixedly disposed at a position that does not interfere with the movement of the chemical solution nozzle. 前記リンス用ノズルが複数設けられ、
前記複数のうちの少なくとも１つのリンス用ノズルが、前記被洗浄基板の中心部に向けて配置され、
前記他方のリンス用ノズルが、前記被洗浄基板の半径方向の中間部分に向けて配置される
ことを特徴とする請求項７記載の枚葉式洗浄装置。 A plurality of the rinsing nozzles are provided,
At least one rinsing nozzle of the plurality is disposed toward the center of the substrate to be cleaned,
The single-wafer cleaning apparatus according to claim 7, wherein the other rinsing nozzle is disposed toward an intermediate portion in a radial direction of the substrate to be cleaned. 前記被洗浄基板に対する薬液処理からリンス処理に移行する時間Ｔが、０．５秒≦Ｔ≦１．５秒である
ことを特徴とする請求項７記載の枚葉式洗浄装置。 8. The single wafer cleaning apparatus according to claim 7, wherein time T for shifting from the chemical processing to the rinsing processing for the substrate to be cleaned is 0.5 seconds ≦ T ≦ 1.5 seconds. 前記リンス用ノズルから吐出するリンス液の吐出流量Ｍが、４００ｍｌ／分≦Ｍ≦１０００ｍｌ／分である
ことを特徴とする請求項７記載の枚葉式洗浄装置。 The single wafer cleaning apparatus according to claim 7, wherein a discharge flow rate M of the rinsing liquid discharged from the rinsing nozzle is 400 ml / min ≦ M ≦ 1000 ml / min. 前記被洗浄基板の回転数Ｎが、１５０ｒｐｍ≦Ｎ≦１０００ｒｐｍである
ことを特徴とする請求項７記載の枚葉式洗浄装置。 The single wafer cleaning apparatus according to claim 7, wherein a rotation speed N of the substrate to be cleaned is 150 rpm ≦ N ≦ 1000 rpm. 前記リンス液は、純水または２−プロパノールである
ことを特徴とする請求項７記載の枚葉式洗浄装置。 The single wafer cleaning device according to claim 7, wherein the rinse liquid is pure water or 2-propanol.
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CN110537248B (en) * 2017-04-19 2023-07-14 株式会社斯库林集团 Substrate processing method and substrate processing apparatus

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CN1697138A (en) 2005-11-16
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