201103095 六、發明說明： 【發明所屬之技術領域】 本發明係關於接合裝置之構造及修正藉由該接合裝置 進行接合時之接合位置的方法。 【先則技術】 近年來’為了因應電子機器之小形化需求，係進行半 導體元件之微細間距化。在構裝此種微細間距之半導體元 件以製造羊導體封裝體時，係使用於形成有引腳之基板的 表面接合上下反轉之半導體晶片以將半導體晶片之電極接 合於引腳的倒裝晶片方式。 在藉由此種倒裝晶片方式將半導體晶片接合於基板 時’須使半導體晶片之電極之位置與基板之引腳位置對 %在進订位置對齊時，係於經反轉之半導體晶片與基板 之間插入上下兩視野攝影機，同時拍攝半導體晶片之電極 面與基板之引腳面，從該影像檢測半導體晶片位置與基板 之引腳位置，以進行定位（參照例如專利文獻^)。 又，由於電極與引腳之接合部係自外部無法看見的位 置，因此在檢查半導體晶片之電極是否接合於引腳之既定 位置時’由於須暫時將已連接之半導體晶片剝離並以顯微 鏡觀察結合面之狀態’因此有檢查須耗費時間、步驟的問 題（參照例如專利文獻2)。 因此，已提出了-種接合半導體晶片之光透射性帶體 载具（參照例如專利絲3)。又，專利文獻3所提出之方式， 201103095 係在將半 由攝影機 極與引腳 鼻電極與 偏移之方 又， 之光透射 半導體晶 極與引腳 帶體載具表面時，藉 監控半導體晶片之電 號以影像辨識裝置運 晶片或基板往無位置 引腳的位置偏移。 係透視過形成有引腳 ’且在拍攝經反轉之 板平行移動以進行電 導體晶片接合於光透射性< 從光透射性之帶體載具背面 之接觸狀態，根據此影像訊 引腳之位置偏移，使半導體 向移動，以自動修正電極與 專利文獻1所提出之方式， 性撓性基板取得引腳之影像 片之電極影像後，使撓性基 之位置對齊。 又，專利文獻2，係提出了修正因接合裝置之運轉使接 之溫度上升而產生之半導體之電極與引腳之位置偏 合載=離此方法’係以配置於自光透射性膜背面側之接 半導：：之位置的攝影機，拍攝接合於光透射性膜上之 =晶片之電極與膜之引腳的影像，根據該影像以手動 方式修正搬送臂之偏置量。 [專利文獻1]曰本特開2004-214705號公報 [專利文獻2]日本特開2〇〇2_43376號公報 [專利文獻3]曰本特開平1〇-123176號公報 【發明内容】 法：當於基板上接合半導體晶片時’係採用下述方 台，置不偏移之方式將基板吸附固定於接合載 Π 接合裁台之加熱器進行加熱，使 反轉之半導體a w Β 次附保持良 曰曰片且以内藏之加熱器加熱半導體晶片之接 201103095 合工具下降至接合位置，將經加熱之半導體晶片之電極緊 壓接合於經加熱之基板的引腳。接合載台，由於配置於與 形成有基板之引腳之面相反側之面側，因此即使基板是光 透射性’當基板吸附固定於接合載台時，即無法從接合載 台側看見引腳的位置。 因此’在使基板吸附於接合載台後，係難以如專利文 獻3所記載之習知技術般，藉由攝影機自光透射性帶體之 背面監控半導體晶片之電極與引腳之接觸狀態，並自動修 正電極與引腳之位置偏移。又，藉由專利文獻3所記載之 習知技術，在基板自接合載台離開之狀態下進行半導體晶 片之電極位置與引腳之位置對齊，其後使基板吸附固定於 接合載台後基板之位置即偏移，而無法接合於正確之位 置，有時會造成接合品質降低。同樣地，即使藉由專利文 獻1所記載之習知技術，由於在使挽性基板移動後即固定 於接合載台’ 0此會因固定時之偏移導致無法接合於正確 之位置，而有有時會造成接合品質降低之問題。 ,另一方面，專利文獻2所記載之習知技術中，由於 影機配置於與接合載台分離之位置，因此無因接合載台 無法從光透射性基板背側看見電極與引腳的問題。然= 如專利文獻2記載之習知技術，#欲藉由影像檢測半導 晶片之電極與引腳之位置偏移時，由於所取得之影像係 雜因此難以在短時間内以機械方式處理，_旦停止y接合 置之運轉’即須由人員觀看監控畫面調整移送臂 量。電極與引腳之位置偏移，由於係起因於接合裝置各 6 201103095 之溫度之隨時間變化，因此須在接合裝置 A K連轉中進行數 二人之停止、調整。如此有導致接合裝置 〜埯轉政率降低的 問題。此問題，當係同時使多數接合裝 ' <锝日τ，題奋 趨於嚴重。又，雖只要減少移送臂之偏置量調整頻度即倉: 提升接合裝置之運轉率，但亦有電極與引腳之偏移變大此 使接合品質降低的問題。 从卞「牛、 低且提升接合品質。 本發明之接合裝置’係在接合位置將半導體 於一面形成有帶狀引腳之光透射性帶 si ^ ^ ώ ^ 上並將其寬度較 腳之寬度寬而其長度較引腳之長度短的半導體 極接合於引腳，其特徵在於，包 日日 電 一 &入 3接合碩，係沿帶體之 吏接δ工具移動；攝影機，配置於帶體 透視過帶體取得引腳與接合於面側， 控制部’使接合頭動作以控制: = 以及 有：邊緣檢測手段，係處理以攝影機取二置像控㈣具 …接°於该引腳之電極支電極邊緣；以及修 手&，係根據邊緣檢測手段所檢 置修正接合位f。 、Α之各邊緣之相對位 本發明之接合裝置令較 之開始動作起每經既定次數之正手㈣就接合裝置 間進行接合位置之修正；作及/或每經既定時 置回到初期設定位置。^裝置之停止後，使接合位 本發明之接合裝置中較佳為，邊緣檢測手段包含：從 201103095 引腳與接合於該引腳之電 1範圍，處理第i範圍之景：€擇僅包含引腳之第 ^ 〜像資料以檢測延伸於各引JJgp > i 邊方向之-對引聊邊緣的步 U於各引腳之長 測出之.一對引腳邊緣之第_圍該範圍中選擇包含所檢 方向使第2範圍移動於電沿各引腳邊緣所延伸之 脚極之方向，以檢測延伸於盥久3丨 腳邊緣延伸方向交又之方向 2於與各弓ί 邊緣更靠第2 _之移 ^第1錢、及在較第！ 向交又之方向之電極之第2?側延伸於與引腳邊 2 .. 邊緣的步驟；以及在電極之第！ 瓊.、袭與第2邊緣之範圍内從一 疋第1 向兩外側掃描影像，以檢測 緣U腳之寬度方 ^ ^ 、各引腳邊緣延伸方向延伸之 對電極邊緣的步驟；修正手段〈伸之 緣相鄰之各電極邊緣之fs1 ^ .㈣各引腳邊 差算出沿著與引腳延伸方步驟;根據各間隔之 置偏移量的步驟；以及根據 ：:：與引腳之位 的步驟。 异出之偏移量修正接合位置 ^發明之接合裝置中較佳為，邊 聊與接合於該引腳之電極之影像中選擇僅包二:心 =圍’處理第1範圍之影像資料以檢測延伸於各::邊第 方向之-對引腳邊緣的步驟；設引腳長邊 邊緣、且其區域較第1範圍窄之第2 ^ &含引腳 範圍之影像以檢測沿各引腳邊续 巳圍，粗略掃描第2 』/〇备弓丨腳邊緣之延伸方向延柚夕兩 的步驟；以及細密掃描所檢測出之一電極之 =極 該電極之-對電極邊緣的步驟；修正手段包人、.°以檢測 以腳邊緣相鄰之各電極邊緣 各·檢測與各 邊緣之間之各間隔的步驟；根據各 8 201103095 間隔之差算出沿著與引腳延伸方向交又之方向之電 腳之位置偏移量的步驟；以及根據所算出之偏移量修正接 合位置的步驟。 本發明之接合裝置中較佳為，修正手段係 電極與引腳之位置偏移量， 人 置於s十均偏移置乘上係數以装 出修正i，並依該修正量修正接合位置。 2發明之修正接合位置之方法，該接合位置，係在接 :位置將半導體晶片接合於於一面形成有帶狀引 之長产…ί: 寬度寬而其長度較引腳 :長度紐之丰導體晶片之電極接合於引腳時之位置，其特 Ϊ含邊緣檢測步驟，藉由配置於帶體另-面側 攝1透視過帶體取得引腳與接合於該引腳之 兮引腳纟像以^測引腳之引腳邊緣與接合於 sg , ^ ^ 遭緣，以及修正步驟，係根據以接合 頭在邊緣檢測步驟所檢測出 一而估拉入 仏利出之各邊緣之相對位置沿帶體之 使接3工具移動，以修正接合位置。 本發明之修正接合位置之方法 /A ^ 4·* /v 1主為，修正步驟， '、方接&裝置之開始動作起每 .忭起母a既疋次數之接合動作及/ 或母經既定時間進行接合位置之修正乍及/ 後，传桩人抑嬰 在接合裝置之停止 傻使接口位置回到初期設定位置。 本發明之修正接合位置之方法中較佳 驟包含.從〇$卩办λ 為’邊緣檢測步 诹匕3 .從引腳與接合於該弓丨腳 含引腳之篦1 r阁 电位之衫像中選擇僅包 “丨腳之第1乾圍，處理第i範圍之 、 於各引腳長邊方6 ，v資料以檢測延伸 邊方向之一對引腳邊緣的步驟；於該範圍中選 201103095 = 1 = ::出之一對引腳邊緣之第2範圍’沿各引腳邊 。使第2範圍移動於電極之方向， ::腳邊緣延伸方向交叉之方向之電極之第 在較第1邊绥Φ止姑^ 緣延伸方向交又：方V:广移動方向側延伸於與引腳邊 ^哲 電極之第2邊，緣的步驟；以及在 腳之ΐ度二Γ緣與第2邊緣之範圍内從一對引腳邊緣往引 2向兩外側掃描影像，以檢測沿各引腳邊緣延伸 …申之—對電極邊緣的步驟；修 與各引腳邊緣相鄰之各#極、.檢測 及根據各間隔間之各間隔的步驟“以 方向之^ 沿著與引腳延伸方向交又之 β電極與引腳之位置偏，於 數以笪Ψ欲τ / 丁巧褐移量乘上係 本路’並依該修正量修正接合位置的步驟。 驟包含… 置之方法中較佳為，邊緣檢測步 I腳與接合於該引腳之電極之影像中 含引腳之第1範圍’處理第i範圍之 ^ 於各引腳具、姦士 資料以檢測延伸 m腳長邊方向之一對引腳邊 區域包含引腳、息祕 7鄉，叹疋—對於其 粗略掃描第Λ/且該區域較第1範圍窄之第2範圍； 範圍之影像以檢測沿各腳邊緣 延伸之—電極的步驟；以及細密、 申方向 :緣：以檢測該電極之一對電極邊緣的步驟 = “測與各引腳邊緣相鄰之各電 /步驟包 步驟；根Mm 邊緣之間之各間隔的 Μ根據各間隔之差算出沿著與引 ^ 向之電極與引腳之位置偏移量的步驟 ^交叉之方 偏移量修正接合位置的步驟。 &根據所算出之 10 201103095 本發明，可發揮在不使接合裝置之運轉效率降低之情 況下提升接合品質之效果。 【實施方式】 以下，參照圖式說明本發明之較佳實施形態。如圖i 所示，本實施形態之接合裝i 100，具備：接合載二μ 係吸附固定於表面形成有引腳46之光透射性㈣45且加 熱，接合頭11，係使前端吸附有半導體晶片Μ之接合工1 12沿吸附固定於接合載台24 ° 〇 ·<> T篮45之表面45a移動且 朝向表面45a下降；攝影機31 你配置於帶體45之形成有 引腳46之面之相反側； 及衩制。卩60，係控制接合頭u 之動作。此外，以下說明中， A x ^ 口^中化者紙面之左右方向 為X方向、與紙面垂直之 方Θ A 7 ne a 方向、沿著紙面之上下 方向為z方向，帶體45之 取腳之面為帶體45之表 面45a，相反側之面為背面45b。 如圖2所示，接人薛， ^ _ L 口碩11女裝於框架ίο上，可自由移 動於沿著圖1所示接人#厶 』目由移 面45a的f 〇載D 24之吸附面27或帶體45之表 面a的方向亦即χγ方向。於 於γ方向^以料導體晶片4 有延伸 空孔I S，μ… 乃41及附於其吸附面10的真 加熱器：内部安裝有用以加熱所吸附之半導體晶… 方向驅:二：:：’搭载有使接合工具12之-端側往Ζ 工具12前Μ π & 又，韃由驅動Ζ方向馬達使接合 八1 ζ刖鳊驅動於7古 ° ，以使吸附於接合工具12前端 201103095 之半導體晶片41可i直人 Μ 11 ^ 5於帶體45之表面45a。又，藉由使 接合頭1 1移動於Χγ方 向’而能使接合工具12及吸附於接 合工具12前端之半導 體日日片41移動於ΧΥ方向。 如圖1所示，接合 樘其般w 戰〇24 ’係透過截熱材22安裝於支 撐基盤21之基底23,於 ^ Μ ^ ^ * 、及附帶體45之吸附面27設有真空 及附帶體45之真空$ w ^ ^ 4, ^ ^ ，於内部安裝有用以加熱已吸附之 帶體45的加熱器25。於 ,_ _ ^ 、暴底23内部組裝有使接合載台24 上下移動於Z方向之蒋叙她姐丄 b 多動機構，在接合時使之上升至緊貼 於帶體45之背面45b的私恶 、位置而能真空吸附帶體45，在接合 後使帶體45往圖中箭頭 之方向送出時，吸附面27係以不 妨礙帶體45移動之方式下降。 如：1所示，於安裝有接合載台Μ之基盤η固定有 :機安裝用臂部33。臂部33,係從基盤Η往帶體45之 於口 =向延伸’於其前端安装有攝影機31。攝影機^配置 .. 囟5b的位置，安裝成朝向帶體45 寺面价，於攝影機31周圍安裝有照明用LED32。此 咖2亦可於攝影機31之周邊部成環狀構成。 如圖i所示，接合裝置100具備控制接合動作整體之 二/ 60。控制部6〇係於内部包含cpu6i與記憶體e的 電月® °藉由以CPU61 -邊參照儲存於記憶體65之控制資料 69邊執行控制程式68、邊緣檢測程式66、修正程式67 2進行接合裝置100之控制。如圖1所示，接合頭U、拯 合载台24分別連接於接合頭介面62、接合载台介面Μ， 藉由控制部60之指令而動作，攝影機31係連接於控制部 12 201103095 60之攝影機介面64 ’而能將 控制抓 攝景取得之影像送至 如圖2所示，於帶體45之表 么回Ma形成有複數組帶狀 引腳❿各組之引腳婦有與半導體晶片41之電極以對 應的數目’引腳46形成為往半導體晶片…卜側延 腳46亦可例如藉由鍍敷等而構成。又，於帶體μ之兩側 面設有孔48，該孔48係咬合於用以將帶體45沿圖中箭頭 a方向达出的進給機構。又，帶體45亦可藉由未圖示之夾 具一邊挾持一邊搬送的進給機構來運送。 如圖3所示，由於帶體45係井锈 透射性，因此當從帶體 45之月面45b觀看半導體晶片41接合 。μ 任0於贡體45之表面45a 且半導體晶片41之電極42接合於弓丨腳4 ^ ^ ^ 者，即會透視過 光透射性之帶體45看見引腳46、電極42、主道μ 电位42、+導體晶片41 之電極42側之面。如圖3所示，與 毛位42接合之附近的 引腳46係以寬度Wi之帶狀直線狀地延伸。又，電極a， 其寬度w2較引腳之寬度Wi寬且其長纟^較引腳牝之長 度短。又’在電極42接合於引腳46上後，引腳乜即從電 極42往引腳46之長邊方向延伸，電極42則超出引腳从 之寬度方向。由於引腳46並不透光’因此弓丨腳4…極 42重疊之部分的電極42’從帶體45之背面仙無法看見， 僅有圖中斜線所示之電極42從引腳46超出之部分透 帶體45而看見。 乃 說明如以上所述構成之接合裝置1〇〇的動作。當接合 裝置100開始動作後’光透射性之帶體45藉由未圖：帶體 13 201103095 進給機構將引腳46送至接合載台24上的既定位置 體45被送至既定之位置後’接合載台“之吸附面η係上 升至緊貼於帶體45之背面的位置，使真空孔26成真空狀 態而將帶體45吸附於接合載台24，並加熱帶體4卜 接著，使接合頭U移動於χγ方向，以未圓示之上下 兩視野攝影機檢測接合工具12前端所吸附之半導體晶片Μ 之電極42之位置與引腳46之位置之位置對齊，並將半導 體晶片41之位置定位成接合位置。 在位置對齊結束後，驅動搭載於接合頭u之ζ方向馬 達使接。工具12朝向帶體45之表面45&下降，而吸附於接 合工具12前端之吸附面16，將被加熱之半導體晶片41之 電極42緊壓於帶體45之引腳46’藉由熱與壓力 42與引腳46。 a在接合動作結束後’使接合工具12上升，並使接合載 〇 24下降。接著，藉由未圖示之帶體進給機構，將帶體45 沿圖1之箭頭&方向送至次一引腳46來到接合載台24上為 止，並進行次'接合。接著，已結束接合之引腳46之部1 係依序被送往箭頭a之方向。 接著’當於帶體45接合有半導體晶片41之部分被送 至攝影機31上後，控制部60即使安裝於攝影機3mED32 發光旦而照明帶體45之背面45b，於其視野中取得如圖3所 不之杉像。接著’以如下所述之方法取得引腳46之引腳邊 緣46a，46b與電極42之電極邊緣42a,42b。 控制部60，如圖4之步驟sl〇1及圖3所示，係從影像 14 201103095 :選擇包含引腳46之影像且不包含電極η之影像的第1 範圍51。此選擇亦可係自帶體45之位置與引腳46之配置 :頁先决夂的位置。又，由於藉由來自光透射性之帶體“之 煮5b側之照明取得引腳46與電極42與半導體晶片4! :電極側之面的影像，因此無半導體晶片41之區域不反射 引腳46之为景為黑色背景。因此’亦可檢索引腳a 之背景較暗的部分來作為第1區域。 一在控制部60選擇第1範圍51後，如圖4之步驟sl〇2 所不’藉由對該範圍之影像資料進行例如二值化處理，而 將其位置儲存於記憶體65。又，控制部6〇如圖4之步驟 卜 圖3所不，係將包含一對引腳邊緣46a，46b且較第 1範圍5 1在Y方向為窄的範圍設定為第2範圍52。又，如 圖之ν驟S104及圖3所示’使此第2範圍 _ 向並藉由例如二值化處理，而如圖4之步驟sl〇5 所7^ &索相對引腳46之引腳邊緣46a，46b延伸於垂直方 向之電極42之第1邊'緣42c。由於電極42之寬度％較 腳46之寬度^大且電極以影像超出引腳μ之影像的 寬度方向’而第i邊緣42c必定出現於腳4 w ::圍二因此在第1邊緣™時，控制部I。: 進行第i :圍52之引腳46所重疊之範圍的資料處理，而 邊緣42c之檢索。藉此，能較快速地檢 心。在檢測出第i邊緣42e後，控制部即將第4 = 之位置儲存於記憶體65。 邊緣42〇 控制。P60,如圖4之步驟S1〇6 w } 15 201103095 -步地使第2範園52移動，並 同的方法檢測與電極 4緣42c之檢測相 似。接著，在檢測第2'喜络第1邊'缘42〇對向的第2邊緣 恨判第2邊緣42d後 體65。接著，如圖4之步驟_7所矛，朝=儲存於記憶 步地使第2範圍52蔣叙 Α 下朝向相同方向進一 門之邊僅進行引聊邊緣術，他之 間之&域的影像資料處理，一邊 之 資料處理係藉由-佶/南 之端邊緣46c。 猎由一值化處理等來進行。 後，控制部60 #瞄*山，A , 欢而出&邊緣46c "丄 C之位置儲存於記憶體65。 控…60係讀出錯存於記憶體^ 2邊緣42d之位置，^/ 第1邊緣42c與第 圍42e，42fu定之步驟Sl〇8所示地進行掃描範 緣42c之圍42e，42f，係在電極之第1邊 ==:長線53與第2邊緣4…方向延長線 的範圍：：間朝向兩條引腳邊緣4一之外側 巳 P圖3之斜線所示之電極42之w 0去 之影像重疊的範圍。，…Λ 之衫像未與引腳46 即如圖4之步掃描範圍叫衍後， ^ ^ 丁從引腳邊緣46a，46b往引腳46 :°夕側沿圖3所示之箭頭方向開始掃描範圍42e， 衫像的掃摇。接著，如圖4之步驟S11〇所示，藉由 ^于邊緣檢測進行與弓丨腳46之延伸方向相同之方向延伸之 極^，仙的檢測。控制部6〇如圖4之步驟S111所示， 在檢測出兩條電極42a，42b後，停止掃描，將兩條電極心， 4 2 b之位置健存於記憶體6 5。 工制P 60如圖4之步驟s i i 2所示，從記憶體^讀出 電和a, 42b之位置與引腳邊緣術，恤之位置，並計算 16 201103095 2相鄰之電極邊緣42a與引腳邊緣46a之引腳46 向與直角方向（Y方向）的距離A、 嚷铋MU M及電極邊緣42b與引腳 邊緣桃之距離B。接著，將距離八與距離B之差的 作為電極42與引腳46之位置偏移量儲存於記憶體… 控制部60,如圖4之步驟Slu所示，將所取得之偏移 量乘以例如1/2等之係數來計算修正量。接著，如圖4之 步驟SU4所示，依此修正量修正_ “之延伸方向斑直 :方向(Y方向)的接合位置。接合位置之修正如本實施形態 中所說明，在進行偏置而處理藉由固定於接合頭丨丨… 攝影機所拍攝的影像後進行位置對齊時，亦可藉由依修正 量變更其他攝影機之中心與接合位置的偏置量使接合以 12之位置移動。又’亦可直接修正接合位置之座標並使接 合工具12之中心移動至修正座標來進行接合。 以上說明之本實施形魄，士 4 由於在檢測電極42之各邊緣 42a〜42d時’係限定處理影像資料的範圍因此能提高影 像處理之速度。因此’如圖1所示’由於為了某半導體晶 片Μ之接合而能根據帶體45在固定於接合載台Μ之時間 内已接合之電極42與弓丨腳46之位置偏移計算接合位置之 修正量，因此能在不停止接合動作之狀態下檢測、監控電 極42與引腳46之接合狀態來修正接合位置。藉此，可在 不降低接合裝置100之運作效率的情沉下使接合品質提升。 又，控制部60,亦可針對—個半導體晶片以複數處 算出電極42與引腳46之偏移量，並將其平均值乘以係數 來計算修正量，亦可針對複數個半導體晶片Μ計算偏移量 17 201103095 ，將其值儲存於記憶體65’在進行㈣次數之接合後計算 你平均值’並將其平均偏移量乘以係數後進行接合位置之 修正。 地| ψ 士圖5所不’亦可與先前說明之實施形態同樣 地鼻出電極42與引腳46之偏蒋嗇 既定接合次數進行接合位置之偏:正量並憶體65 ’就 接合工具12或接合載台24 。位置100由於在 F 八備加熱器14, 25,因此在接合 4:與引腳2汗始動作後會因各部之熱變形而隨時間使電極 次之偏T大。因此，在開始動作後，當接合 提高接合位置之穩定性。此外藉圖由=接合位置之修正而201103095 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a structure of a bonding apparatus and a method of correcting a bonding position when the bonding apparatus is joined. [Prior technology] In recent years, in order to meet the demand for miniaturization of electronic equipment, the fine pitch of semiconductor elements has been made. When such a fine pitch semiconductor element is fabricated to fabricate a sheep conductor package, a flip-chip for bonding a semiconductor wafer of an upper and lower inversion to a surface of a substrate on which a pin is formed to bond an electrode of the semiconductor wafer to a lead is used. the way. When the semiconductor wafer is bonded to the substrate by such a flip chip method, the position of the electrode of the semiconductor wafer and the substrate pin position % are aligned at the ordering position, and the semiconductor wafer and the substrate are reversed. The upper and lower two-view cameras are inserted, and the electrode faces of the semiconductor wafer and the lead faces of the substrate are simultaneously taken, and the position of the semiconductor wafer and the position of the substrate are detected from the image for positioning (see, for example, Patent Document). Moreover, since the junction between the electrode and the pin is from an externally invisible position, when the electrode of the semiconductor wafer is inspected for bonding to a predetermined position of the lead, the semiconductor wafer is temporarily peeled off and combined by microscopic observation. In the state of the surface, there is a problem that the inspection takes time and steps (see, for example, Patent Document 2). Therefore, a light-transmitting belt carrier that bonds a semiconductor wafer has been proposed (see, for example, Patent Wire 3). Moreover, in the method proposed in Patent Document 3, 201103095 is to monitor the semiconductor wafer by transmitting the light from the camera pole and the pin nose electrode and the offset side to the surface of the semiconductor chip and the pin carrier. The electric signal is offset by the image recognition device to transport the wafer or the substrate to the position of the positionless pin. The contact is formed by aligning the pins formed in parallel with the inversion plate to perform the electrical conductor wafer bonding to the light transmissive property of the light transmissive tape carrier, according to the image pin The positional shift is such that the semiconductor is moved to automatically correct the electrode and the method proposed in Patent Document 1 is to obtain the electrode image of the image of the pin of the flexible flexible substrate, and then align the positions of the flexible base. Further, in Patent Document 2, it is proposed to correct the positional displacement of the electrode and the lead of the semiconductor which is caused by the temperature increase of the connection by the operation of the bonding apparatus. The method is disposed on the back side of the light-transmitting film. The camera at the position of the semi-conductor: photographs the image of the electrode of the wafer and the pin of the film bonded to the light-transmitting film, and manually corrects the offset amount of the transfer arm based on the image. [Patent Document 1] JP-A-2004-214705 [Patent Document 2] Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. When the semiconductor wafer is bonded to the substrate, the following substrate is used, and the substrate is adsorbed and fixed to the heater of the bonded carrier by the offset without being offset, so that the reversed semiconductor aw is attached. The wafer is heated by a built-in heater to heat the semiconductor wafer. The 201103095 tool is lowered to the bonding position, and the electrode of the heated semiconductor wafer is pressed tightly to the pin of the heated substrate. Since the bonding stage is disposed on the surface side opposite to the surface on which the lead of the substrate is formed, even if the substrate is light-transmitting, when the substrate is adsorbed and fixed to the bonding stage, the pin cannot be seen from the bonding stage side. s position. Therefore, it is difficult to monitor the contact state between the electrode and the lead of the semiconductor wafer from the back surface of the light-transmitting tape body by the camera, as in the conventional technique described in Patent Document 3, after the substrate is adsorbed on the bonding stage. Automatically corrects the positional offset between the electrode and the pin. Further, according to the conventional technique described in Patent Document 3, the position of the electrode of the semiconductor wafer and the position of the lead are aligned in a state where the substrate is separated from the bonding stage, and then the substrate is adsorbed and fixed to the substrate after the bonding stage. The position is offset and cannot be joined to the correct position, which sometimes causes the joint quality to deteriorate. Similarly, even if the conventional substrate described in Patent Document 1 is used, it is fixed to the bonding stage '0 after the movable substrate is moved, and this may be prevented from being bonded to the correct position due to the shift at the time of fixing. Sometimes the problem of poor joint quality is caused. On the other hand, in the conventional technique described in Patent Document 2, since the camera is disposed at a position separated from the bonding stage, there is no problem that the bonding stage cannot see the electrode and the lead from the back side of the light transmitting substrate. . However, as in the conventional technique described in Patent Document 2, when the position of the electrode and the lead of the semiconductor wafer is to be detected by the image, it is difficult to mechanically process it in a short time due to the acquired image. If the operation of the y-joining is stopped, the amount of the transfer arm must be adjusted by the person watching the monitoring screen. The position of the electrode and the pin are offset. Since the temperature of the joint device varies with time, it is necessary to stop and adjust the number of two in the joint device A K. This has the problem of causing the joint device to reduce the rate of transfer. This problem, when the system makes most of the joints ' < 锝 τ τ, the title strives to be serious. Further, it is only necessary to reduce the frequency of adjustment of the offset amount of the transfer arm, that is, to increase the operating rate of the bonding device, but there is also a problem that the offset between the electrode and the lead is increased, which deteriorates the bonding quality. From "卞牛, low and improved bonding quality. The bonding device of the present invention" is a semiconductor device having a strip-shaped lead light transmissive tape si ^ ^ ώ ^ formed on one side at a bonding position and having a width wider than the width of the leg A semiconductor pole that is wide and has a shorter length than the length of the pin is bonded to the lead, and is characterized in that it is attached to the splicing δ tool along the belt body; the camera is disposed on the belt body. See through the strip to obtain the pin and the joint to the side, the control part 'actuates the joint to control: = and there is: edge detection means, the processing is taken by the camera to take two image control (four) with ... The electrode support electrode edge; and the handle & is based on the edge detection means to detect the correction joint position f. The relative position of each edge of the Α is the forehand of the present invention. (4) correcting the joint position between the jointing devices; and/or returning to the initial set position every time. After the stop of the device, the joint position is preferably in the joint device of the present invention, and the edge detecting means includes From the 201103095 pin and the range of the electric 1 that is bonded to the pin, the ith range is processed: the selection only includes the first image of the pin to detect the extension of each JJgp > i side direction - the reference The step U of the edge of the chat is measured by the length of each pin. The range of the first edge of the pair of pins is selected to include the direction in which the second range is moved to the edge of the pin extending along the edge of each pin. Direction, to detect the direction extending in the direction of the extension of the edge of the longest 3 feet, and to move the direction 2 to the edge of each bow, the second money, and the electrode in the direction of the second! The second side extends over the edge of the edge of the pin; and the image is scanned from the first to the outer sides of the electrode in the range of the second and the second edge of the electrode to detect the edge of the U The width square ^ ^, the step of extending the edge of each pin to the edge of the opposite electrode; the correction means <fs1 ^ of the edge of each electrode adjacent to the edge of the extension; (4) the step of extending the edge of each pin along the step of extending the pin; The step of setting the offset according to each interval; and the step of::: and the position of the pin. The offset correction joint position is preferably: in the joint device of the invention, the image of the electrode of the first range is selected from the image of the electrode connected to the pin: the heart=circle' processing the image data of the first range to detect the extension Each:: the first direction of the edge - the edge of the pin; the edge of the long edge of the pin, and its area is narrower than the first range of the 2 ^ & image with pin range to detect along the edge of each pin巳 , , 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗 粗The person, .° detects the interval between each edge of each electrode adjacent to the edge of the foot, and detects the interval between the edges; and calculates the electric power in the direction of the direction in which the pin extends in accordance with the difference between the intervals of each of the 8201103095 intervals. a step of shifting the position of the foot; and a step of correcting the joint position based on the calculated offset. In the bonding apparatus of the present invention, preferably, the correcting means shifts the position of the electrode and the pin, and the factor is offset by a factor of 10 to apply the correction i, and the joint position is corrected according to the correction amount. 2 The method for correcting the bonding position of the invention, wherein the bonding position is to bond the semiconductor wafer to one side to form a strip-shaped lead. ί: The width is wider and the length is longer than the lead: the length of the conductor The position of the electrode of the wafer is bonded to the pin, and the edge detecting step is included, and the pin is placed on the other side of the strip to obtain the lead pin and the pin-shaped pin attached to the pin. The edge of the pin of the pin is connected to the sg , ^ ^ edge, and the correction step is based on the relative position of each edge of the edge that is extracted by the bonding head in the edge detecting step. The belt is moved by the tool to correct the joint position. The method for correcting the joint position of the present invention / A ^ 4·* / v 1 main, the correcting step, the starting action of the ', square joint & device starts from the joint action of each of the number of times and/or the mother After the correction of the joint position and/or after a predetermined time, the piler suppresses the stop of the joint device and returns the interface position to the initial set position. Preferably, the method for correcting the joint position of the present invention comprises: λ 卩 λ 为 ' 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘 边缘In the image, select only the first dry circumference of the foot, and the step of processing the i-th range on the long side of each pin 6 , v data to detect one of the extended edge directions to the edge of the pin; 201103095 = 1 = :: The second range of the edge of one pair of pins is 'along the side of each pin. The second range is moved in the direction of the electrode, and the second is the direction of the electrode in the direction in which the edge of the foot extends. 1 edge 绥 Φ 止 姑 ^ edge extension direction intersection again: square V: wide moving direction side extends on the second side of the edge of the electrode with the edge of the electrode, the edge of the step; and the foot between the two sides and the second In the range of the edge, the image is scanned from the edge of the pair of pins to the outside of the lead 2 to detect the edge extending along the edge of each pin... the step of the opposite electrode edge; repairing the # pole adjacent to the edge of each pin, Detecting and according to the steps of each interval between the intervals "in the direction of the ^ electrode along the direction of the pin extension The position of the foot biased to be in the hundreds Da Ψ τ / D Qiao brown shift amount based on the present path by 'engagement position and the step of correcting by the correction amount. Preferably, the edge detection step I and the image of the electrode bonded to the pin include the first range of the pin 'processing the i-th range of the pin, the traitor data To detect the extension of the m-foot in the direction of the long side of the pin, the pin-edge area contains the pin, the sigh - the second range that is roughly scanned for the Λ/ and the region is narrower than the first range; The step of detecting the electrode extending along the edge of each leg; and the step of finely, applying the direction: edge: detecting one of the electrodes to the edge of the electrode = "measuring each electrical/step package step adjacent to the edge of each pin; The Μ of each interval between the edges of the root Mm calculates a step of correcting the joint position by the offset of the step of the offset from the position of the electrode and the lead of the lead based on the difference between the intervals. According to the present invention, it is possible to improve the bonding quality without lowering the operational efficiency of the bonding apparatus. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Show that this embodiment The bonding device i 100 is provided with a light-transmitting property (four) 45 on which a lead 46 is adhered and fixed to a surface, and is heated, and the bonding head 11 is attached to the semiconductor wafer Μ at the tip end. The bonding stage 24° &·<> The surface 45a of the T basket 45 moves and descends toward the surface 45a; the camera 31 is disposed on the opposite side of the surface of the strip 45 on which the lead 46 is formed; and Twisted. The operation of the joint head u is controlled. In the following description, the left-right direction of the paper surface of the A x ^ ^ ^ ^ is the X direction, the direction perpendicular to the paper surface A 7 ne a direction, and the direction along the paper surface In the z direction, the surface of the belt body 45 is the surface 45a of the belt body 45, and the opposite side surface is the back surface 45b. As shown in Fig. 2, the picker Xue, ^ _ L mouth master 11 women on the frame ίο, It is freely movable in the direction of the 吸附γ direction of the adsorption surface 27 of the transfer surface 45 of the transfer surface 45a or the surface a of the strip 45, which is shown in Fig. 1. The material conductor wafer 4 has extended holes IS, μ... 41 and a true heater attached to the adsorption surface 10: internal mounting Used to heat the adsorbed semiconductor crystal... Directional drive: 2::: 'Equipped with the end of the bonding tool 12 toward the end of the tool 12 Μ π & 鞑, by the drive Ζ direction motor to make the joint 8 1 ζ刖The crucible is driven at 7°° so that the semiconductor wafer 41 adsorbed to the front end 201103095 of the bonding tool 12 can be straightened to the surface 45a of the strip 45. Further, by moving the bonding head 1 1 in the Χγ direction The bonding tool 12 and the semiconductor day piece 41 adsorbed to the tip end of the bonding tool 12 can be moved in the x direction. As shown in Fig. 1, the joint w 〇 24' is attached to the base 23 of the support base 21 through the heat intercepting material 22, and the vacuum is attached to the suction surface 27 of the 体 ^ ^ * and the attachment body 45. The vacuum of the body 45 is $w^^4, ^^, and a heater 25 for heating the adsorbed strip 45 is installed inside. The _ _ ^ and the bottom 23 are internally assembled with a moving mechanism for moving the joining stage 24 up and down in the Z direction, and are raised to adhere to the back surface 45b of the belt body 45 at the time of joining. The belt 45 can be vacuum-adsorbed in a private position and in a position, and when the belt 45 is fed in the direction of the arrow in the figure after the joining, the suction surface 27 is lowered so as not to hinder the movement of the belt 45. As shown in Fig. 1, the machine mounting arm portion 33 is fixed to the base plate n to which the mating stage is attached. The arm portion 33 has a camera 31 attached to the front end of the belt body 45 from the base plate to the end portion. Camera ^Configuration: The position of the 囟5b is mounted so as to face the belt body 45, and the illumination LED 32 is attached around the camera 31. This coffee 2 can also be formed in a ring shape at the peripheral portion of the camera 31. As shown in Fig. i, the bonding apparatus 100 is provided with two/60 of the overall control engagement operation. The control unit 6 is configured to execute the control program 68, the edge detection program 66, and the correction program 67 2 by referring to the control data 69 stored in the memory 65 by the CPU 61 - while the CPU 6 is included in the internal memory. Control of the engagement device 100. As shown in FIG. 1, the bonding head U and the salvage carrier 24 are respectively connected to the bonding head interface 62 and the bonding stage interface, and are operated by the command of the control unit 60. The camera 31 is connected to the control unit 12 201103095 60. The camera interface 64' can send the image obtained by controlling the captured scene to the picture shown in Figure 2. On the surface of the strip 45, the back Ma is formed with a complex array of ribbon pins, and the set of pins and semiconductor wafers. The electrode of 41 is formed by a corresponding number 'pin 46' to the semiconductor wafer. The side extension 46 can also be formed, for example, by plating or the like. Further, a hole 48 is formed on both sides of the belt body μ, and the hole 48 is engaged with a feeding mechanism for extending the belt body 45 in the direction of the arrow a in the figure. Further, the belt body 45 can be transported by a feeding mechanism that is conveyed while being held by a clip (not shown). As shown in Fig. 3, since the strip 45 is permeable to the rust, the semiconductor wafer 41 is joined when viewed from the lunar surface 45b of the strip 45. μ is any 0 on the surface 45a of the tribute 45 and the electrode 42 of the semiconductor wafer 41 is bonded to the slanting foot 4 ^ ^ ^, that is, the light transmissive strip 45 is seen through the lead 46, the electrode 42, the main track μ The potential 42 and the surface of the + conductor wafer 41 on the electrode 42 side. As shown in Fig. 3, the lead 46 in the vicinity of the land portion 42 is linearly extended in a strip shape having a width Wi. Further, the electrode a has a width w2 which is wider than the width Wi of the pin and whose length 短 is shorter than the length of the pin 。. Further, after the electrode 42 is bonded to the lead 46, the pin 延伸 extends from the electrode 42 to the long side of the lead 46, and the electrode 42 extends beyond the width of the lead. Since the lead 46 does not transmit light, the electrode 42' of the portion where the pole 42 is overlapped is not visible from the back of the strip 45, and only the electrode 42 shown by the diagonal line in the figure is beyond the lead 46. Partially visible through the body 45. The operation of the joining device 1A configured as described above will be described. After the bonding apparatus 100 starts to operate, the optically transmissive strip 45 is sent to the predetermined position by the predetermined position body 45 sent to the bonding stage 24 by the feeding mechanism 13 201103095 feeding mechanism. The adsorption surface η of the 'joining stage' is raised to a position close to the back surface of the belt body 45, and the vacuum hole 26 is vacuumed to adsorb the belt body 45 to the joining stage 24, and the belt body 4 is heated. The bonding head U is moved in the χγ direction, and the position of the electrode 42 of the semiconductor wafer 吸附 adsorbed by the front end of the bonding tool 12 is detected by the unillustrated camera and the position of the pin 46 is aligned, and the semiconductor wafer 41 is placed. The position is positioned as the joint position. After the alignment of the position is completed, the motor mounted on the joint head u is driven to be connected. The tool 12 is lowered toward the surface 45& of the belt body 45, and is attracted to the suction surface 16 of the front end of the bonding tool 12, The electrode 42 of the heated semiconductor wafer 41 is pressed against the pin 46' of the strip 45 by heat and pressure 42 and the lead 46. a after the end of the bonding operation 'rises the bonding tool 12 and causes the bonding carrier 24 Down. Then, The belt body 45, which is not shown, feeds the belt 45 to the next stage 46 in the direction of the arrow & Fig. 1 to the joining stage 24, and performs the second 'joining. Then, the joining is completed. The portion 1 of the lead 46 is sequentially sent to the direction of the arrow a. Then, 'when the portion of the strip 45 to which the semiconductor wafer 41 is bonded is sent to the camera 31, the control unit 60 is mounted on the camera 3mED32. The back surface 45b of the illumination strip 45 obtains a fir image as shown in Fig. 3 in its field of view. Then, the lead edges 46a, 46b of the lead 46 and the electrode edge 42a of the electrode 42 are obtained as follows. 42b. The control unit 60, as shown in step S1〇1 of FIG. 4 and FIG. 3, selects the first range 51 including the image of the pin 46 and does not include the image of the electrode η from the image 14 201103095. The position of the self-contained body 45 and the configuration of the pin 46: the position of the page 夂. Further, since the lead 46 and the electrode 42 and the semiconductor wafer 4 are taken by illumination from the light-transmissive tape body ! : an image of the surface on the electrode side, so the area without the semiconductor wafer 41 does not reflect the pin 46 King black background. Therefore, it is also possible to search for the darker portion of the pin a as the first region. After the control unit 60 selects the first range 51, the video data of the range is stored in the memory 65 by, for example, binarization processing as shown in step S1 of Fig. 4 . Further, the control unit 6 is set as the second range 52 in a range including the pair of lead edges 46a and 46b and narrower in the Y direction than the first range 5 1 as shown in Fig. 4 . Further, as shown in FIG. 4 and FIG. 3, the second range _ is made by, for example, binarization processing, and as shown in step 4 of FIG. 4, the gate is opposite to the lead 46. The lead edges 46a, 46b extend from the first side 'edge 42c of the electrode 42 in the vertical direction. Since the width % of the electrode 42 is larger than the width of the leg 46 and the electrode exceeds the width direction of the image of the pin μ by the image, and the i-th edge 42c must appear on the foot 4 w :: the second edge, thus at the first edge TM, Control unit I. : Perform the data processing of the range in which the i-th: the pin 46 of the circle 52 overlaps, and the search of the edge 42c. This allows for a quicker check. After the i-th edge 42e is detected, the control unit stores the 4th position in the memory 65. Edge 42〇 control. P60, as shown in Fig. 4, step S1〇6w} 15 201103095 - Step 2 moves the second fan 52, and the same method is detected similarly to the detection of the electrode 4 edge 42c. Next, the second edge 42d rear body 65 is hatched on the second edge of the second edge of the second 'Xi' edge. Then, as shown in step _7 of Fig. 4, the storage area is stored in the memory step so that the second range 52 is under the direction of the same direction and only enters the side of the door, and only the edge of the interrogation edge is performed. Image data processing, one side of the data processing is by - 佶 / South end edge 46c. Hunting is performed by binarization processing or the like. Thereafter, the control unit 60 #图*山, A, Huanhua & edge 46c "丄 C is stored in the memory 65. The control 60 error is stored in the memory 42 edge 42d, and the first edge 42c and the circumference 42e, 42fu are shown in steps S1 to 8 to scan the periphery 42e, 42f of the scanning edge 42c. The first side of the electrode ==: the range of the extension line of the long line 53 and the second edge 4... direction: the direction of the electrode 42 toward the outer side of the two pin edges 4, which is shown by the oblique line of FIG. The extent to which the image overlaps. , ... Λ Λ 像 像 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 引脚 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 46 Scanning range 42e, sweeping of the shirt image. Next, as shown in step S11 of Fig. 4, the detection of the poles extending in the same direction as the direction in which the bow legs 46 extend is performed by edge detection. As shown in step S111 of Fig. 4, the control unit 6 stops the scanning after detecting the two electrodes 42a and 42b, and stores the positions of the two electrode cores 4b in the memory 65. The process P 60 is as shown in step sii 2 of Fig. 4, reading the position of the electric and a, 42b from the memory ^ and the edge of the pin, the position of the shirt, and calculating 16 201103095 2 adjacent electrode edge 42a and lead The distance 46 between the pin 46 of the leg edge 46a is a distance B from the right angle direction (Y direction), 嚷铋MU M, and the distance B between the electrode edge 42b and the pin edge. Next, the positional shift amount of the electrode 42 and the lead 46 which is the difference between the distance VIII and the distance B is stored in the memory... control unit 60, as shown in step Slu of FIG. 4, multiplying the obtained offset by For example, a factor of 1/2 or the like is used to calculate the correction amount. Next, as shown in step SU4 of Fig. 4, the correction position is corrected in accordance with the correction amount "the direction in which the extending direction is straight: the direction (Y direction). The correction of the bonding position is performed as described in the embodiment. When the processing is fixed to the image captured by the camera, the image is aligned, and the offset of the center of the other camera and the position of the joint can be changed by the amount of correction to move the joint to the position of 12. The coordinates of the joint position can be directly corrected and the center of the bonding tool 12 can be moved to the correction coordinate to be joined. The embodiment of the present invention described above is limited to the processing of image data by the edges 42a to 42d of the detecting electrode 42. The range of the image processing can therefore increase the speed of the image processing. Therefore, as shown in FIG. 1 , the electrode 42 and the bow which have been joined according to the tape body 45 in the time of being fixed to the bonding stage 由于 can be used for the bonding of a semiconductor wafer. The positional deviation of the leg 46 calculates the correction amount of the engagement position, so that the engagement state of the electrode 42 and the lead 46 can be detected and monitored without stopping the engagement operation. Therefore, the bonding quality can be improved without lowering the operational efficiency of the bonding apparatus 100. Further, the control unit 60 can calculate the offset between the electrode 42 and the pin 46 for a plurality of semiconductor wafers at a plurality of locations. The amount is multiplied by the average value to calculate the correction amount. The offset amount 17 201103095 can also be calculated for a plurality of semiconductor wafers. The value is stored in the memory 65'. After the (four) times are joined, the average value is calculated. 'The average offset is multiplied by the coefficient and the joint position is corrected. 地 ψ 图 图 图 图 图 图 图 图 图 图 图 图 图 同样 同样 同样 同样 同样 同样 同样 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻 鼻The number of engagements is the deviation of the joint position: the positive amount of the body 65' is the bonding tool 12 or the bonding stage 24. The position 100 is at the F eight heaters 14, 25, so the joint 4: and the sweat of the pin 2 After that, due to the thermal deformation of each part, the electrode is secondly biased T with time. Therefore, after the start of the operation, the joint improves the stability of the joint position. In addition, the map is corrected by the joint position.
無修正時之電極與引腳之偏移量的變化令之-點鍵線係顯示 接合次數n丨〜n A 決定’例如亦可…為50次t可依經驗或機械特性自由的 正中，如先前 〜為100次等。又，各次之修The change of the offset between the electrode and the pin when there is no correction makes the point-key line display the number of joints n丨~n A to determine 'for example, it can be 50 times t can be free from the center of experience or mechanical characteristics, such as Previously ~ for 100 times and so on. Again, each repair
戈无刖所說明，修正 〜V 六次之修正偏移量d6減少 $ 1〜d5之-半’且如第 來修正全量。此外，六、又以上時，係將係數設為j •r . ^ y 人之累積修正量D#相笼 正之情形下之電極與引腳 糸相專於在無修 接合動作進行修正，置。又’亦可非依既定之 —又’如圖6所示，在接ST:來進行修正。 疋時間内累積了各次修正θ 兮止後，係依與既 量’往返方向修正接合位置成之累積修正量D相同的 期值，在次-開始動作時^如，亦可使偏置量回到初 之偏移。如圓6所示 ^地減少電極42㈣腳饬 此接合位置回到初期位置之動作 18 201103095 係配合接合裝置 於接合裝置100 合位置之修正量 之開始動作初期 提升接合品質。 100之冷卻時間和緩地進行。例如，亦可 安裝溫度計，與該溫度之降低同步地使接 回到初期位置。藉此，減低接合裝置100 之電極42與引腳46之位置偏移量，而能 參照圖7，圖8說 所說明之實施形態相 明。 明其他實施形態。對參照圖丨至圖4 同的部分賦予相同之符號省略其說According to Ge Wu, the correction offset V6 is reduced by $1~d5-half and the total amount is corrected as shown in the first paragraph. In addition, when the above is more than the above, the coefficient is set to j • r . ^ y The accumulated correction amount of the person D# The cage and the pin in the case of the positive phase are designed to be corrected in the non-repairing action. Further, it is also possible to perform the correction by connecting ST: as shown in Fig. 6. After the correction θ is accumulated in the 疋 time, the period value is the same as the cumulative correction amount D in the round-trip direction correction joint position, and the offset amount can be made at the time of the second-start operation. Go back to the initial offset. As shown by the circle 6, the ground electrode 42 (four) pedals are moved back to the initial position. 18 201103095 Series mating device The amount of correction at the joint position of the joint device 100 is started at the beginning of the operation. The cooling time of 100 is carried out gently. For example, a thermometer can be installed to bring it back to the initial position in synchronization with the decrease in temperature. Thereby, the positional shift amount between the electrode 42 and the lead 46 of the bonding apparatus 100 is reduced, and the embodiment shown in Fig. 8 can be explained with reference to Fig. 7. Other embodiments are described. The same reference numerals are given to the same parts as those in Fig. 4, and the description is omitted.
中選擇包：:〇’如圖8之步驟S2C)1及圖7所示，係從影像 τ域擇包含引腳46之B 丁 — & & L 範圍55。此選擇… 42之影像的第1 帶體45 η 說明之實施形態同樣地，亦可係自 位置與引腳46之配置預先決定的 索㈣…景較暗的部分來作為第;：:位置，亦可檢 所干在Π: 6〇選擇第1範圍55後，如圖8之步驟_ 二範圍進行掃描，並對所掃描之影像資料進 偏，將：二，而檢測出引腳46之-對引腳邊緣-， …:卜側往;=ΠΓ:Γ。掃描係從半導體晶 側進行。 導體日日片41、亦即從圖7之紙面右側往左 —^ &制60如圖8之步驟S203及圖7所示，係 包含—對引腳邊緣♦働且較第丨範圍55 ; 範圍56。第2範圍56 〕弟2 域，較第1範圍55在Γ方Π:46,包含於其區 自第1範圍55往X* 之長度短，其位置係 方向相隔既定距離之位置且其χ方向各 19 201103095 邊與一對引腳邊緣46a，杨平行的位置。 亦可係半導體晶片41之外周至電極42之之既疋距離， 第2範圍56之¥方 方向長度。又， γ方向長度’亦可設定為至少 方向長度長。 較電極42之γ 其次，控制部60 Q μ I⑽如圖8之步驟S204所 範圍56之區域之鈿政卢松 坏下’進仃第2 匕找之粗略㈣’並對齊影像f 理，而如圖8之步驟S2〇5所示 丁 一值化處 相畋卢神，丨， 崎°心疋否包含電極42。此 粗略處理，例如亦可係以攝影機Μ之攝影 十個像素作為一個群纟且來 之數個〜數 口砰、，且來進仃影像處理。接- 理係依各群組進行’於相鄰之群組間依濃淡之差；= 42之概略外周形狀’以特定出其概略位置。此外 進一步確認於電極42之内側不存在電極。 夺係 :制部6。在判斷於第2範圍56中不含有The selection packet::〇' is as shown in step S2C) of Fig. 8 and Fig. 7, and the range B containing the pin 46 is selected from the image τ field. In the same manner as in the embodiment of the present invention, the first embodiment of the image of the image 42 of the image 42 may be the same as the position of the position of the lead 46 (4). Can also check the dryness in the Π: 6 〇 select the first range 55, as shown in step _ 2 of Figure 8, scan and scan the scanned image data, will: 2, and detect the pin 46 - On the edge of the pin -, ...: the side of the pad; = ΠΓ: Γ. The scanning is performed from the semiconductor crystal side. The conductor day piece 41, that is, from the right side of the paper surface of FIG. 7 to the left side, is formed as shown in step S203 of FIG. 8 and FIG. 7, and includes a pair of pin edges ♦ 働 and a third 丨 range 55; Range 56. The second range 56 〕 the second domain is smaller than the first range 55 in the square: 46, and is included in the region from the first range 55 to the length of X*, and the position is separated by a predetermined distance and the direction is Each 19 201103095 side is parallel to the pair of pin edges 46a, Yang. It is also possible to set the distance from the outer circumference of the semiconductor wafer 41 to the electrode 42 and the length in the direction of the second range 56. Further, the length γ in the γ direction may be set to be at least long in the direction. γ of the electrode 42 Next, the control unit 60 Q μ I(10) is in the range of the range 56 of the step S204 of Fig. 8, and the plague of the plaque is less than the rough (four) of the second 匕, and the image is aligned, and Step S2〇5 of Fig. 8 shows that the value of the Ding is not related to Lu Shen, 丨, °, and 电极. This rough processing can be performed, for example, by taking ten pixels of a camera as a group and a few to several ports, and processing the image. According to each group, the difference between the adjacent groups is determined by the difference between the adjacent groups; the approximate outer shape of 42 is specified to specify the approximate position. Further, it was confirmed that the electrode was not present inside the electrode 42. Capture the system: Department 6. It is judged that the second range 56 does not contain
如圖8之步驟S206所示，對 P 對圖7所不之電極42之γ方向 之邊的周邊寬度W3之區域進行 旛史嫵4e 琨仃、、，田在知锸。細密掃描係檢測 攝衫機3 1之攝影元件之各像素 冢常之濃淡程度，以像素單位檢 測電極42在孓方向之邊緣 平細 疋啄Wa，42b。控制部6〇如圖8 步驟S 2 0 7所示’在檢測出-條 卬—條電極邊緣42a，42b後，如圖 8之步驟S208所示停止掃描，蔣_ f田將一條電極邊緣42a，42b在 Y方向之位置儲存於記憶體。士从 ， 遛65此外，細密掃描不限於電 極42之Y方向之邊的周邊寬卢 見戾W3之£域，亦可對第2範 圍5 6整體進行細密掃描。 控制部60如圖8之步驟S2〇9所示，從記憶體^讀出 電極邊緣42a，42b之Y方向位置與引腳邊緣術，—之γ 20 201103095 方向位置，計算分別相鄰之電極. 46之延伸方向與直角方向（γ方向）的距離A 6a之引腳 似㈣聊邊緣杨之距離B。接著，將距==極邊緣As shown in step S206 of Fig. 8, the area of the peripheral width W3 of the side of the electrode 42 in the gamma direction of the electrode 42 shown in Fig. 7 is 妩史妩4e 琨仃, and the field is known. The fine scanning system detects the pixels of the photographic element of the camera 3, and the degree of gradation of the illuminating unit 42 is measured in pixels. The electrode 42 is flat at the edge of the 孓 direction, 疋啄 Wa, 42b. The control unit 6 ' stops the scanning as shown in step S208 of FIG. 8 after detecting the strip-edge electrode edges 42a, 42b as shown in step S207 of FIG. 8, and an electrode edge 42a is formed. , 42b is stored in the memory in the Y direction. In addition, the fine scanning is not limited to the peripheral width of the side of the electrode 42 in the Y direction, and the entire range of the second range is also finely scanned. As shown in step S2 〇9 of FIG. 8, the control unit 60 reads the positions of the electrode edges 42a, 42b in the Y direction from the memory, and the position of the γ 20 201103095 direction, and calculates the adjacent electrodes. The extension direction of 46 is similar to the distance of the right angle direction (γ direction) A 6a (4) the edge distance of the edge Yang. Next, the distance == pole edge
之差的-半作為電極42與引腳46之 與距離B 存於記憶體65。 向位置偏移量儲 控制部60，如圖8之步驟S2I0淋-方® a V诹S210所不，將所取得之γ :向:置偏移量乘以例如1/2等之係數來計算修正量4 延伸方6 8之步驟S2U所示’依此修正量修正引腳46之 =向與直角方向(Y方向)的接合位置。接合位置之修正 别說明之實施形態同樣地，亦可藉由依修正量變更其 他攝影機之中心與接合位置的㉟置量使接合工& η之位置 移動。又’亦可直接修正接合位置之座標並使接合工具Η 之中心移動至修正座標來進行接合。 以上說明之本實施形態，與先前說明之實施形態同樣 也可在不使接合裝置100之運轉效率降低之情況下提升 接合品質。 【圖式簡單說明】 圖1係顯示本發明之實施形態之接合裝置構成的說明 圖。 圖2係顯示以本發明之實施形態之接合裝置將半導體 晶片接合於帶體之狀態的俯視圖。 圖3係顯示從背側觀看已藉由本發明之實施形態之接 合I置接合有半導體晶片之帶體之狀態的圖。 21 201103095 圊 4 #此 * ”肩示本發明之實施形態之接合裝置之動作的流 程圖。 圖5係顯示本發明之實施形態之接合位置之修正時序 與修正量的圖。 圖6係顯示本發明之實施形態之相對於時間之接合位 置之修正量的圖。 圖7係顯示從背側觀看已藉由本發明之另一實施形態 之接合裝置接合有半導體晶片之帶體之狀態的圖。 圖8係顯示本發明之另一實施形態之接合裝置之動作 的流裎圖。 【主要元件符號說明】 10 框架 11 接合頭 12 接合工具 14, 25 加熱器 15, 26 真空孔 27 吸附面 21 基盤 22 截熱材 23 基底 24 接合載台 31 攝影機 32 led 22 201103095 33 臂部 41 半導體晶片 42 電極 42a，42b 電極邊緣 42c 第1邊緣 42d 第2邊緣 42e，42f 掃描範圍 45 帶體 45a 表面 45b 背面 46 引腳 46a, 46b 引腳邊緣 46c 端邊緣 48 子L 51，55 第1範圍 52, 56 第2範圍 53, 54 Y方向延長線 60 控制部 61 CPU 62 接合頭介面 63 接合載台介面 64 攝影機介面 65 記憶體 66 邊緣檢測程式 23 201103095 67 修正程式 68 控制程式 69 控制資料 100 接合裝置 24The difference - half is stored in the memory 65 as the distance between the electrode 42 and the pin 46 and the distance B. The position shift amount storage control unit 60 calculates the obtained γ: by multiplying the obtained γ: by a factor of, for example, 1/2, as shown in step S2I0 of Fig. 8 . The correction amount 4 is extended by the step S2U shown in the step S2U. The correction position of the correction pin 46 is in the direction of the right angle (Y direction). Correction of the joint position In the same manner as the embodiment described above, the position of the jointer & η can be moved by changing the center of the other camera and the 35 position of the joint position by the correction amount. Further, the coordinates of the joint position can be directly corrected and the center of the joint tool 移动 can be moved to the correction coordinate to be joined. The present embodiment described above can improve the bonding quality without lowering the operational efficiency of the bonding apparatus 100 as in the embodiment described above. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing the configuration of a joining device according to an embodiment of the present invention. Fig. 2 is a plan view showing a state in which a semiconductor wafer is bonded to a tape by a bonding apparatus according to an embodiment of the present invention. Fig. 3 is a view showing a state in which a tape of a semiconductor wafer is bonded by a bonding I according to an embodiment of the present invention as seen from the back side. 21 201103095 圊 4 #本* ” A flowchart showing the operation of the bonding apparatus according to the embodiment of the present invention. Fig. 5 is a view showing the correction timing and the correction amount of the joint position in the embodiment of the present invention. Fig. 7 is a view showing a state in which a tape of a semiconductor wafer bonded to a bonding apparatus according to another embodiment of the present invention is viewed from the back side. Fig. 8 is a flow chart showing the operation of the joining device according to another embodiment of the present invention. [Description of main component symbols] 10 Frame 11 Bonding head 12 Bonding tool 14, 25 Heater 15, 26 Vacuum hole 27 Adsorption surface 21 Base plate 22 Heat intercepting material 23 Substrate 24 Bonding stage 31 Camera 32 led 22 201103095 33 Arm 41 Semiconductor wafer 42 Electrode 42a, 42b Electrode edge 42c First edge 42d Second edge 42e, 42f Scanning range 45 Band 45a Surface 45b Back 46 Foot 46a, 46b Pin Edge 46c End Edge 48 Sub L 51, 55 1st Range 52, 56 2nd Range 53, 54 Y Directional Extension 60 Control 63 engaging stage 64 camera interface 65 memory interface 100 engages the edge detection program 66 2320110309567 68 fixes the control program 69 controls the data unit 61 CPU 62 engaging head interface device 24