TW201102275A - Nozzle geometry for organic vapor jet printing - Google Patents

Abstract

A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

Description

201102275 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to depositing an organic material by a row of print heads. The priority of this application is the priority and benefit of the US Provisional Application Serial No. 61/2 1 1,002, which is filed on March 25, 2009. The present invention was made with government support under DE-FC26-04NT42273 awarded by the Department of Energy. The government has certain rights in the invention. The claimed invention is made by, by, and/or by one or more of the following parties to a joint university corporation research agreement: Regents of the University 〇f Michigan), Princeton University, The University 〇f Southern California, and Universal Dispiay Corporation. The agreement is effective at the time of the date on which the claimed invention is made and the claimed invention is made as a result of the activities taken within the scope of the agreement. [Prior Art] The right-hand cause makes optoelectronic devices using organic materials more and more desirable. Many of the materials used to make such devices are relatively inexpensive, so that organic optoelectronic devices have the potential to cost advantage over inorganic devices. In addition, the inherent properties of organic materials, such as their flexibility, make them well suited for use in specific applications, such as on flexible substrates. Examples of organic optoelectronic devices: organic light-emitting devices (〇LED), organic photoelectric crystals, organic photovoltaic cells 147306.doc 201102275 and organic photodetectors. For a more detailed description of OLEDs, the U.S. Patent No. 7,279, issued to U.S. Pat. Various ways of depositing organic materials for organic materials are known, such as vacuum thermal evaporation, solution processing, organic vapor deposition, and organic vapor nozzle printing. SUMMARY OF THE INVENTION Certain aspects of the present invention pertain to nozzle geometry suitable for organic vapor jet printing. In one embodiment, a first device is provided. The device contains a column of print heads. The printhead further includes a first nozzle to a first gas source that is hermetically sealed. The first nozzle has an orifice having a minimum dimension of 0.5 to 500 μm in a direction perpendicular to the flow direction of the first nozzle. At a distance from the orifice into the first nozzle that is 5 times the minimum dimension of the orifice of the first nozzle, the smallest dimension perpendicular to the flow direction is the orifice of the first nozzle At least twice the minimum size. The printhead can include a plurality of first nozzles hermetically sealed to the first gas source. The printhead can include a second nozzle' that hermetically seals to a second source of gas other than the first source of gas. The second nozzle has an orifice having a minimum dimension of -0.5 to 500 microns in a direction perpendicular to the flow direction of one of the second nozzles. At a distance from the orifice into the second nozzle which is 5 times the minimum dimension of the orifice of the second nozzle, the smallest dimension perpendicular to the flow direction is the orifice of the second nozzle Today 147306.doc -4 - 201102275 At least twice the minimum size. The printhead can include a third nozzle that is hermetically sealed to a third gas source that is different from the first gas source and the second gas source. The third nozzle has an orifice having a minimum dimension of one to five to five micrometers in a direction perpendicular to one of the third nozzles. a distance from the orifice into the minimum dimension % of the orifice of the third nozzle in the third nozzle, the smallest dimension perpendicular to the flow direction being the orifice of the third nozzle At least twice the minimum size. The print head may include a plurality of first nozzles hermetically sealed to the first gas source, a plurality of second nozzles that are resistant to sealing to the second gas source, and/or a gas seal to the third gas source a plurality of third nozzles. There are several different ways in which a nozzle can satisfy the geometric considerations discussed above. The first nozzle may have a constant cross-section from the orifice to the orifice into one of the first nozzles, the distance being twice the smallest dimension of the orifice of the first nozzle. For a distance in the range of 〇 times to 2 times the smallest dimension of the first nozzle in a direction perpendicular to the flow direction of one of the first nozzles, the minimum size of the orifice of the first nozzle may be from the first nozzle The distance of the orifice is continuously increased. For the distance in the range of Q times to 2 times the minimum dimension of the first nozzle in the - direction perpendicular to the flow direction of the first nozzle, the minimum size of the orifice of the first nozzle may follow the hole from the first nozzle The distance of the mouth increases linearly. The nozzle can be formed from a variety of materials. In particular, Shi Xi is preferred. Metals and ceramics are also preferred. The orifice of the first nozzle is along a direction perpendicular to the flow direction of one of the first nozzles. 147306.doc 201102275 较佳 The preferred range of minimum dimensions includes 100 to 500 micrometers, 20 to 100 micrometers, and 0.5 to 20 micrometers. The preferred shape of the cross section of the first nozzle perpendicular to the flow direction of the first nozzle comprises a circle and a rectangle. The first device can be used with a plurality of gas streams carrying different organic materials. Preferably, the first device includes first and second gas sources and is disposed on the print head and the first gas source and the second gas source A thermal barrier between the two. Preferably, the heat source is also independently controllable for each of the print head, the first gas source, and the second gas source. The eight-device can be used with a stream of I gas that can carry a variety of organic materials in each gas stream, where different organic materials can be sublimed in independent temperature control. Preferably, the first gas source comprises a chamber and a second sublimation officer. Chu ^ ^ Juice The source of the mth can be separated from the print head by being disposed on the print head and the head thermal barrier. It can print a heat source. The parent device can be independently controlled. The first device can be used to flow from the first nozzle. ', He Heyan shot a gas shot when the - device is being used to maintain the jet head and the first, right-hand dry limb jet from the mouth, and can be maintained at the first and third or third gas sources The temperature can be independently controlled without η. The gas provided by the two gas sources provided by the gas containing the -mth middle-disorder source includes:: an organic material, and the first material has the same as the first organic material 4 - Organic competition, the difference in the degree of the dish is at least 10 147,306.doc 201102275 degrees one of the second sublimation temperature. Some aspects of the invention are directed to a microfluidic printhead suitable for use in organic vapor jet printing. In one embodiment, a --device is provided. The first device includes a print head and a first gas source hermetically sealed to the print head. The column further includes a first layer 1 first layer step comprising a plurality of apertures, each aperture having a minimum dimension of -0.5 to micrometers. A second layer is bonded to the first layer. The second layer includes a first through hole in fluid communication with at least one of the first gas source and the orifices. The second layer is made of an insulating material. The first layer of the first device may include a channel that provides fluid communication between the first through hole of the second layer and the orifice of the first layer in the first layer. The second layer of the first-split may also (or alternatively) comprise a channel that provides fluid communication between the first via of the second layer and the orifice of the first layer in the second layer. The first layer and/or the second layer may further comprise a heat source.

The first device can include a third layer disposed between the first layer and the second layer and bonded to the first layer and the second layer. The third layer can include a channel that provides a fluid connection between the first via of the second layer and the orifice of the first layer. The 3D layer may further comprise a heat source D. The plurality of orifices may be in fluid communication with the first gas source. The first device can further comprise a second gas source hermetically sealed to one of the printheads. The first via of the second layer can be in fluid communication with a first group of apertures of the first layer. The second layer can further include a second through hole in fluid communication with the second gas source and the second group of orifices of the first layer. The first device can further 147306.doc 201102275 includes a third gas source that is hermetically sealed to one of the printheads. The second layer can further include a third through hole in fluid communication with the third gas source and the third group of orifices of the first layer. A source of gas (e.g., a first source of gas or any other source of gas) can comprise a plurality of organic sources. A plurality of through holes connected to different gas sources can be in fluid communication with the same orifice, resulting in gas mixing at one of the orifices. For example, the first via may be in fluid communication with a first organic source and a second via may be in fluid communication with a second organic source. Both the first through hole and the second through hole may be in fluid communication with the -th group hole π of the second layer. The print head, the first organic source, and the second organic source each have an independently controllable heat source. The first means may further comprise one of a first valve for controlling the flow of the first organic source and a second chamber for controlling the flow of the second organic source. The first and second valves are thermally insulated from the heat source. The first layer is preferably formed of tantalum. The first layer is preferably formed by using one to two layers selected from the group consisting of: fused joints, cold heading, - anodic bonding, and the like. If there is an additional layer in the print head (eg, the third layer or layer thereof), in one embodiment, it is preferred that: two to join (four) the extra m-th. Engaging the layer and the second layer with each other in a second yoke, preferably between the seven layers of the pile, joining the first layer by means of a eutectic bonding or fusion & - the bonding 苐-μw is preferably bonded to the second layer and the second layer by means of an anode. The 歹J printing head may further comprise a micro-electrical switch which is adapted to the switch 147306.doc 201102275 The skin can block or allow fluid communication between at least one of the first through-hole pupils. At least one aperture can be formed in the protrusion from the print head. Between 50 micron and 5 micro [implementation] A high-definition display pixel ~, and consists of a patterned red 仏, green strip and blue strip strip of 30 μιη pill. Different colors The edge of the strip can only be..._. For organic pixels, the preferred pattern has 5 _ - sharpness to avoid undesired material overlap caused by over-twisting. These dimensions can also be applied to other broadcast stations., mechanical devices such as organic transistors or other devices are deposited in one High-definition displays or organic materials used in potting devices using organic materials are organic vapor-jet deposition (〇vjp). To become a viable display manufacturing technology, the preferred organic vapor-jet printing can be 5 _ sharp Degree-patterned organic film. It is also preferred that the (IV) p process can simultaneously deposit multiple m-mouth systems - the centroid achieves the simultaneous deposition of multiple lines. Using direct analog Monte Carlo (DSMC) technology for 30 μιη scale Modeling of the characteristic organic vapor jet printing process has been shown to assume that a nozzle orifice = width of 20 μηι requires one nozzle aperture of < 5 μηι to substrate spacing to achieve the desired feature sharpness. This estimate is from the previous One of the rule of thumb observations observed in the 〇vjp study: print resolution scaled from nozzle to substrate spacing. However, 'previous techniques may not be well suited to produce designs 5 147306.doc -9- 201102275 -20 (four) nozzle array for operation in the substrate. First, with the height tolerance of the optically flat substrate - the nozzle plate is suitable for operating at these dimensions across a reasonable number of simultaneously deposited lines. To provide the best possible height tolerance. The prior art may not be well suited to provide such a nozzle plate. For a plurality of nozzle arrays, it is preferred to maintain flatness over a relatively large area. Secondly, preferably The nozzle plate is kept hot during 0VJP, so it is desirable to maintain the strength of the material within 30 CTC. In addition, thermal expansion can affect the maintenance of these tight tolerances, and therefore (4) expansion or no deformation due to expansion It is desirable. Finally, the gas dynamics of the nozzle-substrate system is indicative of a three-dimensional structure.矽Micromachining or, more generally, semiconductor micromachining provides a way to meet these demanding specifications. The fabrication step can be performed on a highly polished wafer to eliminate height variations. The applicable temperature range for the Peru 2 system across organic vapor deposition is stable. Tantalum also has a much lower coefficient of thermal expansion than most metals. An anisotropic (tetra) agent can be used to make a tapered nozzle and a multilayer structure can be fabricated using a silicon-on-insulator wafer and wafer bonding technique. These techniques have been fully developed in the field of microfluidics. Microfluidic microfabrication technology is used in liquid and vapor delivery systems and has been used in inkjet printing. Similar techniques can also be applied to metals and Tauman. Interfacing a microfabrication device with the outside world presents additional problems. In the case of OVJP, the expectation of operating at temperatures above 300 〇c raises even more problems that do not exist in many other fields. An OVJP system can have a user-usable vapor generation system, which means that an organic material is stored in one of a durable and macroscopic structure. And this means that you can use the relative 147306.doc 10- 201102275, = gold "transfer the money line to the material ι as described in this article, using a selection of intermediate materials; it has been proven that it can be used in a full] and a stone yo nozzle plate Provided between - can be airtight (four) ^ e Some aspects of the invention relate to a suitable nozzle geometry. Suitable for organic vapor jet printing - in one embodiment, a first device 1 is provided The device comprises a column head. The step comprises: a gas-tight seal to one of the first gas sources ^ nozzle. The 5th head - the mouth has an orifice, the hole. The direction perpendicular to the moving direction has a minimum dimension of 〇.5 to 5 〇〇 micrometers. At a distance from the hole D into the first nozzle which is 5 times the minimum size of the orifice of the first nozzle Vertical. The minimum dimension in the direction of flow is at least twice the minimum dimension of the orifice of the first nozzle. Figure 1 illustrates the dimensions involved in the previous photograph and some of the geometry of the full scale; The drawings in the entire application are not necessarily drawn to scale. Figure ^ shows four different nozzles a profile of a shape in which the profile is taken along a direction parallel to the airflow in the nozzle and also along a direction showing a minimum dimension at the orifice of the nozzle. In each geometry, an orifice has a perpendicular a minimum dimension ι〇ι in one of the directions of flow of the nozzle. The "orifice" is thus defined by the point at which the small dimension reaches the minimum value, that is, the airflow passing through the nozzle is subjected to the point at which Maximum contraction. Each nozzle also has a distance 102 from the orifice into the nozzle that is five times the smallest dimension of the orifice. The female one nozzle also has a dimension 103 that is one of the smallest dimensions perpendicular to the flow direction at a distance 102 from the orifice into the first nozzle. As illustrated, the size 1〇3 is at least twice the size of 1〇1. spray? 147306.doc 201102275 Mouth 1 u arrives at the "hole π" - the inclined side of the point. The nozzle has an inclined side in a majority of one of the nozzles, but the sides are perpendicular to the aperture at a small distance. In this case, when there is a minimum dimension within the flow direction of the nozzle within which a finite distance is reached, the "hole" is the closest to the point of the substrate, and the minimum dimension is the minimum at that point. value. Nozzle 120 can have better mechanical strength, which can be made easier than nozzle 110 due to uniform orifice size. Nozzle 130 has a sloped side that reaches a point but widens slightly outward before reaching the bottom of nozzle 130. Nozzle 13 〇 illustrates that the orifice is not necessarily at the point of the nozzle closest to the substrate. The nozzle 14 has a vertical side in which the airflow is significantly narrowed as it is ejected from the nozzle. Other nozzle geometries can also meet the guidelines of previous photographs. Figure 2 shows a section of four different nozzle geometries taken at the orifice in a direction perpendicular to the direction of the gas flow. The nozzles whose cross-sections are taken in Fig. 2 do not necessarily correspond to the nozzles of the figure. The arrow in each orifice indicates the "minimum size" of the orifice. In mathematical terms, at the smallest dimension, the length of the arrow relative to the entire arrow in a direction perpendicular to one of the arrows is at a local maximum (for circles, ellipses, and triangles) or constant (for rectangles). And when the above situation occurs, the "minimum" size is the minimum local maximum or constant. Figure 2 shows sections of apertures 210, 220, 23 and 24, respectively, having circular, elliptical, rectangular and triangular cross-sections. A rectangular aperture is used for the optimum shape of the deposition line and is also relatively easy to obtain in one of the nozzles that are etched by ruthenium. However, other shapes can be used. The "line print head can comprise a plurality of first nozzles hermetically sealed to the first gas source. 147306.doc -12· 201102275 The print head may include a second nozzle 'which is hermetically sealed to a second gas source different from the first gas source. The second nozzle has a bore having a minimum dimension of one of 0.5 to 500 microns in a direction perpendicular to the flow direction of the second nozzle. The enthalpy from the orifice is one of five times the smallest dimension of the orifice of the second nozzle = the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the orifice of the second nozzle. The print head can include a third nozzle that is hermetically sealed to a third gas source that is different from the first gas source and the second gas source. The third nozzle has an orifice 'the orifice having a minimum dimension of -0.5 to 500 microns in a direction perpendicular to the direction of flow of one of the third nozzles. At a distance from the orifice into the third nozzle which is 5 times the minimum size of the orifice of the third nozzle, the smallest dimension perpendicular to the flow direction is the 5 hole of the third nozzle At least twice the smallest size of the mouth. (4) The print head may include a plurality of first nozzles hermetically sealed to the first gas source, a plurality of second nozzles sealed to the second gas source, and/or a plurality of first sealed to the third gas source a third nozzle. The presence-nozzle can satisfy several different ways of considering the geometry discussed above. The first nozzle can enter the first nozzle from the orifice to the first nozzle - the distance has a constant profile which is twice the J dimension of the orifice of the first nozzle. For a distance in the range of 〇 times to 2 times the smallest dimension of the first nozzle in a direction perpendicular to the maneuvering direction of one of the first nozzles, the minimum size of the orifice of the first nozzle may be from the first nozzle The distance of the orifice is continuously increased. For a distance in the range of 〇 times to 2 times the minimum dimension of the first nozzle in a direction perpendicular to the flow direction of the first nozzle 147306.doc -13- 201102275, the minimum size of the orifice of the first nozzle may follow The distance from the orifice of the first nozzle increases linearly. The nozzle can be formed from a variety of materials. It is better. A preferred range of the smallest dimension of the orifice of the first nozzle in a direction perpendicular to the flow direction of the first nozzle comprises 100 to 500 μm, 2 to 1 μm, and 〇 5 to 20 μm. The preferred shape of the cross section of the first nozzle perpendicular to the flow direction of the first nozzle comprises a circle and a rectangle. The first device can be used with a plurality of gas streams that can carry different organic materials. The first device preferably includes first and second gas sources and a thermal barrier disposed between the print head and the first and second gas sources. Preferably, an independently controllable heat source is provided for each of the printhead, the first gas source, and the second gas source. The first device can be used with several gas streams that can carry a plurality of organic materials in each gas stream, wherein different organic materials can be sublimed in different chambers with independent temperature control. Preferably, the first gas source comprises a The first sublimation room and the second sublimation room. The first gas source may be separated from the print head by a thermal barrier disposed between the print head and the first gas source. An independently controllable heat source can be provided for each of the print head, the first sublimation chamber, and the second sublimation chamber. Various heat sources can be used. For example, a resistive plate on the surface of the print head can be used, or a heat source can be incorporated into the layer of the print head, for example as a resistive element embedded in one or more layers of the print head. The first device can be used to shoot a 5 μ gas jet from a nozzle and other nozzles. 147306.doc -14 - 201102275 Flow 0 device is being used to shoot the print head from the print head and the first, first and In the case of a gas jet, the cocoa is independently controlled/the third gas source maintains a different and τ independently controlled temperature. In one embodiment, the gas includes 罝 right 筮曰# ώ the source provided by the disorder source... the first organic material, and the first... the gas supplied by the body source contains the second organic material, and the milk has the first organic A younger organic material has a sublimation temperature. Sublimation, sound eve..." - The second measure of 10 degrees Celsius is more accommodating. "The embodiment of the seat can be more easy than the other ten. But one of the characteristics of the invention is Ha „ jk, he is not necessary. The total 曰I 1 5 'separate source allows the material to be continuously changed, regardless of whether the sublimation temperature is similar or different. β Some aspects of the invention relate to a microfluidic print head. For organic (four) white prints II The set may further include a valve for controlling the flow of the first organic source and a second valve for controlling the first and second gas flows. The first and first valves may be thermally insulated from the heat source. One layer is preferably formed of tantalum. The layer preferably uses a joint splicing 1 to a second layer selected from the group consisting of: a fusion joint, a cold head, an anodic joint, and an ugly:: If there are additional layers in the print head (eg a third layer or other: a good use of these types of joints to join the additional layers. In the case of only one embodiment, an anode is preferably used to make The first layer of discs are joined to each other. In another embodiment, the preferred layer is placed - the third layer Between the two brothers, S..S^, by means of a eutectic bonding or fusion bonding _ [ό] 147306.doc -15- 201102275 bonding the first layer and the third layer, and preferably by means of an anodic bonding Engaging the third layer and the second layer. The print head can further include a microelectromechanical switch adapted to block or allow at least one of the first via and the apertures depending on a state of the switch Between the fluid communication, at least one aperture may be formed in one of the protrusions from the print head. The thickness of the print head is preferably between 50 micrometers and 5 micrometers. The thickness of the printhead includes A first layer to and including all layers of a second layer, the first layer comprising a nozzle, the second layer comprising a via. In one embodiment, an organic vapor jet deposition system 3 is provided. A perspective view showing one of the OVJP system 3〇〇 (including the print head 31〇 and the bracket) has been actually made and the operating system 300. The system 3〇〇 contains the print head 31〇', and the J print head contains the map. 4 to 6 in detail to illustrate the flow channel and nozzle array. Six organic vapor sources 32() (also known as "gas source") is welded to the manifold 33〇, which is then hermetically sealed to the print head. Figure 17 shows in more detail a structure of a vapor source. ^ Made of material (such as ova, controlled expansion steel) that maintains its shape at the operating temperature of the print head. The print head 3 〇 can be clamped to the I, and a high temperature perfluoroelastomer 塾The sheet is sealed to achieve one of the organic tantalum source 320 and the print head 31. The method can also be used to achieve the method of, for example, bonding the print head to a corona, which is I can be better seen in the heated tube machine γ 7 of laser welding to the Kovar manifold. The organic vapor source 320 is composed of an encapsulated organic source ... via a heating tube. This assembly is attached to the 8"inch c〇nflat flange (manifold 33〇) used as one of 147306.doc -16· 201102275 and a gas feedthrough. The steam generator is connected to the crucible on the manifold 330 via a welded stainless steel bellows 34. The bellows 340 acts as an expansion joint. Since the organic vapor source 320 is expandable when heated, a flexible coupling is required between the manifold 33 and the vapor generator to avoid thermal stress that can be transmitted to the print head 3 and deformed. . The steam generator 320, the bellows 340, the manifold 33, and associated fittings are formed to extend from the top of the manifold 330 to one of the printheads 3 1 畅 within 3 inches of the conduit. The organic (four) is placed in the sump with the vent hole at the end of a glass # and inserted into the official. #插人-棒, the organic material contained in it is in the heated steam generator. The top of the pipe is then sealed to the outer diameter of the glass rod using a Swagelok® UUrat(R) fitting. A thermocouple that passes through the inner diameter of the glass rod provides a temperature reading within the vapor generating benefit. The carrier gas system is fed into the conduit via a consistent, butt-shaped adapter between the feedthrough and the nanofiber fitting. These features can be seen more clearly in Figure 17. Display the exploded view of the print head. The first to fourth layers of the printhead 410 are provided with a plurality of apertures. The apertures preferably have a shape relative to that of FIG. a: the first layer 410 is preferably made of tantalum, which can be easily utilized. Conventional techniques developed, for example, in the context of semiconductor processing, are patterned to include the desired nozzle geometry. [Layer 41 〇 includes a plurality of apertures patterned therein: a plurality of nozzles 415. The first layer 41() is bonded to the second layer 42(). Preferably, the D method comprises a combination of bonding, anodic bonding, cold bonding, and eutectic bonding. The second brake 乂 φ, made of insulating material, to limit the heat conduction from the gas source [ 147306.doc -17- 201102275 and to enable the temperature of the first gas source to control the temperature of the first layer 4 〇 第一 the first layer 420 is bonded to the first layer 410. The second layer 420 includes a through hole 422 in fluid communication with the nozzle 415. As illustrated, the channel 424 etched into the second layer 420 provides fluid communication between the via 2 and the nozzle 415. An ohmic contact 44A is vaporized over the crotch portion of the first layer 410 to allow the nozzle plate to be addressed by a heating current. The first layer of the first layer of the printing head is used as one of the deposition systems, and the second layer 42 is a borosilicate wafer, and the anode is bonded by anodic bonding. Two layers. Figure 5 shows a photograph of the first layer 510 and a second layer 520 which have been actually produced. Instead of or in addition to the channels in the second layer 420, the first layer 41A can include channels that provide fluid communication between the vias 422 and the nozzles 415 within the first layer. The first layer 410 can further include a heat source, such as a heating contact 44A. A second layer (not shown) may be disposed between the first layer 410 and the second layer 42 and joined to the first layer 410 and the second layer 420. Preferably, the bonding method is as described above. In this case, the first layer 410 will be considered to be "connected to" the second layer 420. Alternatively or in addition to the channels in layers 410 and/or 420 being a second layer may include providing one of the fluid communication between the vias 422 and the nozzles 415. The third layer can further comprise a heat source. As illustrated in Figure 4, the plurality of nozzles 4丨5 can be in fluid communication with a single gas (e.g., the same, gas source). One way to achieve this is for the channel to connect a via to a plurality of nozzles. FIG. 6 shows a proof of one of the masks 600 including the channel 610 and the via 620. For example, the structure of FIG. 6 can be applied to a boron borate wafer and used as the second layer 420 of FIG. 4 147306.doc 201102275. Avoid sharp corners to impart a gentle curvature to the tunnel 610 and further reduce stress concentrations. Channel 610 is open 4 = slave line. Line 612 allows for the same doping w, the old body (four) towel two not "|feed to the early single nozzle array t. Line 614 allows the main, dopant material in a ', come white -...射; the shot is mixed. Line 616 feeds the material of the early solid source to a nozzle array. As can be seen from Figure 4, 'multiple gas sources can be hermetically sealed to a column ^ as seen in Figure 6 The channel can be used to deliver gas from a variety of sources in a variety of ways. For example, the first and second gas sources that are hermetically sealed to a print head or the first, second, and third gas sources can each This is in fluid communication with its own separate array of nozzles. For example, if the structure of Figure 6 is adjusted to include three lines similar to line 616, this will occur. In this form, the first device may further comprise airtightness. Sealing to a second gas source of the printing head. The first through hole of the second layer of f may be in fluid communication with the first group of orifices of the first layer. The second layer may further comprise the second gas source and the second Layer - the second group of orifices is in fluid communication with one of the second through holes. The first device can enter - A third gas source comprising a hermetically sealed seal to the printhead. The second layer of progress includes a third through hole in fluid communication with the fifth gas source and the third group of orifices of the first layer. A plurality of through holes to different gas sources may be in fluid communication with the same orifice, resulting in a gas mixing at the orifice. As illustrated by lines 61; 2, 614, and 616, mixing from different sources may be performed in this manner. One, two, two or more gases. For example, the first through hole may be in fluid communication with a first organic source and the second through hole is in fluid communication with a second organic source 147306.doc • 19- 201102275 Both the through hole and the second through hole are in fluid communication with one of the first layer of the first layer. The print head, the first organic source and the second organic source are each independently separable Controlling the heat source. In addition to the gas on the print head that mixes gases from different sources, the gas source (eg, the first gas source or any of the helium) + other sources of milk may also contain the same evaporation to or from different sources. Gong Xi Xi #士',,,^ to a variety of organic materials. However, mixing in the print allows for maximum control of the maximum flexibility in terms of parameters (e.g., temperature and gas flow) in each chamber of the sublimed organic material. For example, this organic material can be extremely imaginative in the case of significantly different sublimation temperatures. The rate of sublimation can be more easily controlled. In different situations, the temperature required to sublimate a type of 妯 颂 颂 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 。 。 。 。 。 。 。 。 Fig. 7 shows a section of a rectangular nozzle 74 which has been actually produced. The nozzle is made in a cut-to-layer 7 joint. The wafer used to form the first layer is thicker than 5 μm at the beginning to take into account the protrusions and has a final thickness of 50 μm. The nozzle 740 has an orifice 73, which is located in the projection 720 from the first layer 710. The orifice 73 has a small size of 2 μm. The protrusion 72 protrudes from the first layer 71 to protrude by a micrometer. The slave uses the mouth 74 在 very close to the substrate so that the nozzle is spaced about 5 microns apart. The protrusion (4) allows the gas discharged from the mouth of the mouth to pass through the -5 micron thick space and escape to the edge of the first layer. The angle between the wall of the mouthpiece and the plane of the first layer 71〇 is 74 degrees. It is easy to use and involves the selective touch of K0H to achieve the following (4) technique: . Figure 7 also shows image 75〇, which shows the etched to the nozzle inlet in the 147306.doc • 20-201102275 electron microscope. Figure 8 shows a photograph of the nozzle side of the finished print head. Nozzle array 8〇2 is an array of rectangular aspect ratio rectangles in the center of the makeup piece. The bump 8 (10) appears as a black square. The larger bumps are positioned further away from the nozzle array, while the smaller bumps are positioned proximate to the nozzle array 802 and are interspersed with the nozzle array 8A2. The bumps 8〇4 help to maintain the desired substrate_nozzle spacing during deposition. The bumps are suitable for use in a laboratory setting, but may or may not be present in a commercial embodiment and also exhibit a displacement sensor window 80. Displacement sensor window 〇6 provides a means for locating the nozzle when the nozzle is in use and when, for example, measuring the substrate/nozzle or based on alignment marks or other features on the substrate. Figure 8 also shows a scanning electron micrograph (SEM) 820 of one of the nozzle arrays. Figure 8 also shows an SEM of one of the nozzle orifices of the nozzle array 8〇2. The structures illustrated and photographed in Figures 5 through 8 have been actually fabricated. The print head is composed of two bonded wafers (the first layer and the second layer). The bottommost wafer is a 1 〇〇 μΐΏ thick nozzle plate, which is shown in Figures 7 and 8. A total of 128 nozzles were engraved into the board. The nozzles have a bottom aperture of size 2q (four), wherein the major axis corresponds to the direction of travel of the substrate to produce a narrow spring having a minimum dimension of 2 〇 μηι. The nozzles are configured in four (four) 32 nozzles. Each of the rows is offset relative to one another to allow for printing of a plurality of side-by-side strips. Each of the rows can simultaneously deposit different organic vapor formulations. The anisotropic residue produces a nozzle body π that is much wider than the exit. Returning the bottom side of the material head (the side facing the substrate) so that the (four) line and other features are raised beyond the wafer table 147306.doc -21 - 201102275. The raised nozzle tip allows the nozzle to be close to the substrate while still The carrier gas is allowed to easily escape in the gap between the print head and the substrate. The raised bump network around the nozzle protects the nozzle tip from impinging on the substrate. The mouthpiece is equipped with a helium and has an optical window to allow for incorporation - an optical displacement sensor to measure the position relative to the substrate. The channel and insulator layer (second layer) shown in Figures 5 and 6 are made of 5 Å thick side silicate glass. The deep fluid channel feeds the nozzles by (iv) 100 to 2 inches into the side of the glass wafer facing the nozzle plate. The channels are fed with fluid through vias extending through the thickness of the wafer. When the channel layer and the insulator layer are joined, a set of three fluid independent fluids is formed: the road. Vapor can be fed through any of the six through holes and will emerge from the nozzle as determined by the layout of the circuit. The heads illustrated in Figures 5 through 8 are incorporated into the organic vapor jet printing system illustrated in Figure 3. As indicated in relation to Figure 3, the print head is placed on the - Kovar manifold. The print head is sealed to the manifold by means of a custom cut rubber sheet and held in place by means of a non-recorded steel and an i_el. High temperature rubber (e.g., Kalrez rubber) can be used for the gasket. Other packaging strategies can be used, such as anodic bonding the print head to a kovar backsheet. It is believed that a metal backing will provide a stronger tough sealing surface for the print head. Mathematical modeling of the effects of spray t and print head to substrate gap can be performed. The flow of carrier gas through the printhead to the 2-plate gap can be modeled using a lubrication approximation of the non-I-reducible flow. All non-radial flow components are ignored. Defining the flow characteristic length series of print head to substrate gap h. This length is 147306.doc •22- 201102275 The pressure change is negligible and the ideal gas law can be used to approximate the gas expansion in the radial dimension. The average velocity of the vapor flow is given by EqILA·丨. The μ system is a 'P system pressure' τ system temperature, R is an ideal gas constant, a r system radius, and a j system molar flow rate.

Equation II.A.1 (y)=z£^. J RT dr 2τώΓ~Ρ This expression can be solved as the differential equation Eq ILA 2&. The 丨 and 〇 subscripts indicate the input and output conditions. The equation Π.Α.2 = _ d2 _ 12々成7\ fr \Γί . The outer radius of the rice cooker is 50 mm, and the inner radius is 10 mm, and the carrier gas viscosity is 2.5×10·5 kg/m*s. The flow rate is equal to 2 s_ and the pressure at the outer edge of the print head is negligible, and the pressure on the inside of the disc is approximately 3500 pa. Intuitively, a large pressure drop will occur between the tip of the nozzle and the door gap between the substrate. The downstream end of the gap is at 3, the lake, then the P gas knife will have a -5 μηη-average free path. Particle-to-wall collisions may be dominant in this situation, so they can be considered as a Knudsen flow. Use 】Vac

The transfer probability method of Sci.Tech 8 636_46, which gives the molecular flow rate between two regions by ^ιια3, wherein the molecular flow rate of the J system, the temperature of the T and P systems, and the molecular weight of the m-m carrier gas, The area of the tube is read and evaluated as a transmission probability. For example, she 1* D. J. and Boeckman J. Vac Sci kh. A 9 (4) 8 Jul/Aug 1991 calculates w = 533 533 for a rectangular pipe having a length of 4: i and a height ratio. 147306.doc •23· 201102275 Equation Π.Α.3

Aw I~~8, D-A) = 0.0023^^ (for parallel gaps) By direct simulation of Monte Carlo techniques for possible nozzle design - studies have shown that one nozzle with internal cone and outer cone The design produces the optimum flow pattern for high resolution deposition. The flow resistance is very close to the analytical model above and thus predicts the conductance of 〇.〇021 Sccm/Pa. Rectangular nozzle tips with a profile of μ μΠ1 are recommended. The recommended nozzle to substrate spacing is 3 to 5 μηη. It is possible to have 32 such nozzles or more such nozzles in a = column. A large nozzle array is provided because it reduces the pressure difference between the vapor generator/substrate. The resulting deposition profile is expected to have a full width of one of the peaks of ^ 8 μηι. The 胄 deposition is reduced to 10% of the centerline value of its 4" claws, which can be accurately deposited in the 3 〇 pm pixel of 3G (4) as a boundary without significantly imposing on adjacent pixels. For a biconical nozzle having a 2 〇 wide opening and a 5 (four) tip to substrate gap, the expected deposition profile is shown in Figure 9 as a solid line. Height can be in any unit. The ideal pixel fill deposition profile having a height equal to the contour average of the pixel width is shown in dashed lines. The figure shows a modeled pressure profile 1〇1〇 with a 20 4′′ wide orifice and a 5 μιη tip to the substrate gap and a dark zone of the barrier profile formed by the mouthpiece body of the modeled temperature gallery. The wheel corridors are symmetrical, so that only one and a half of the nozzles can be displayed to capture relevant information. A 7-person thinking contour can be achieved in the case where one of the outer tapers on the nozzle does not match the internal taper of the nozzle. However, due to the reduced conductivity of the simulated nozzle structure 147306.doc • 24- 201102275, the poems of the five-point m-printing head are less good. The effect is more pronounced. The pressure required to force the flow rate dilutes the organic matter in the vapor stream and increases [column: heat transfer between the head and the substrate. This leads to - unsatisfactory operation The printhead, which has a '', without a bottom taper, has proven to be an effective depositer,' and can be used because it is easier to manufacture than a printhead having a tapered bottom side. If the internal cone is removed, the operating pressure increases, but Not serious. However, it is interesting that 'European outline presents a double-peak structure (shown in Figure 9). It can be upgraded to produce an optimized mesa-like deposition wheel corridor. It can be fabricated using plasma etching. A wide variety of geometries. Mathematical nucleation of flows through the vapor generator and channel array is also possible. The eq is derived from the incompressible Navier_st〇kes equation. .II.Β.ι calculates the volumetric flow rate of a rectangular pipe having a short cross-sectional dimension 匕 and a larger cross-sectional dimension w. It is then converted to a molar flow rate using the ideal gas law. μ-viscosity and X-channel The axial dimension is positive in the downstream direction. ρ, the pressure and temperature in the lanthanide channel. The ideal gas constant of the rule system. Equation Π.ΒΙ 〇_ PdPh5w_ dP2 h\v dxllM ^ ~ ΚΓάχ\1μ~ ~ώ^2Α^ The nozzle array can be analyzed by dividing it into segments and applying a reasoning similar to Kirchhoff's current law. The compressible laminar flow through one of the nozzles is typically scaled according to Qm〇1~p2. Due to the extremely small length scale 'the whole spray It is itself scaled linearly with p. A direct analog Monte Carlo code has been used to estimate the geometry of the sec IB2 prohibited spray [s ] 147306.doc •25· 201102275 m〇l/(pa*s) Figure u shows for a model. The flow resistance has been estimated and even distributed. A loss factor for the mouth C = 5.4xl 〇 -H One of the nozzle arrays in the line analysis verifies the vapor in the array to all the mouth equationsΠ .Β2°° L Equation II.Β.3

Qn^Cf(Pn, PT) Equation Π Β 4 After 32 segments, a pressure change of less than 〇2% is expected. The pressure of the drive stream through the nozzles is expected to be constant along the array. . The vapor generation rate can be approximated by eq ΙΙ.Β.5, where ρ-system vapor produces a pressure of a single enthalpy P, an equilibrium vapor pressure of the organic material in the unitary enthalpy, q the flow rate of the carrier gas, and the amount of organic material leaving the unit. The lanthanum indicates the efficiency parameter of the saturation of the vapor from the bomber. This is good for a well-designed system close to 1. According to the previous 〇VJp work, it is estimated that the remaining gas C force of the 材led material is used to sweep the saturated CBP vapor toward the oscillating nozzle out of the source unit using the carrier gas of 5 seem under 8 Torr. The instrument is capable of achieving a deposition rate of 2000 A/s, which indicates a vaporization rate of about 2 χ 1 〇 14 molecules/s and a CBP vapor pressure of 800 μTorr. eq.II.B.5 j = y~-q Assuming that the carrier gas flow through one of the CBp vapor generators at 4 operating pressure is 4 seem, then approximately 3.3 xl 〇 3 molecules/s ^ will be produced. This translates to a deposition rate of 900 A/s below the mouth of the mouth. This in turn predicts a write speed of 〇.6 mm/s. The carrier gas flow rate has been significantly reduced from such estimated conditions as the typical flow of 1 seem and the pressure below 1 Torr. Despite this change', a comparable write speed of about 1 mm/s has been observed. 147306.doc 26· 201102275: The modeling of the organic boat in the gas generator assumes that the organic matter stores the gas r:: = sac, and is carried by the carrier 2 above the vent: in this case 'The organic vapor is mixed with the carrier gas. The water is in the saturated state. It is expected that the carrier gas of the carrier gas is necessary for the organic material to advance downstream. In addition, organic vapors have been very diluted according to the mole fraction (~0.004%). Further dilution can only increase the I force drop without improving the performance. If the flow through the organic vapor source unit is allowed to stagnate, the organic material can be reflowed by migrating upstream to the cooler region of the tube enclosing the source unit. The false hydrazine maintains the organic vapor source unit at 4 sccm, 4 Torr and then. C, then according to the modeling in C〇MSOL, a 5(10) heated zone is sufficient to prevent the organic material from flowing back. Operating conditions can be significantly different from these initial prediction conditions, however, no significant reflux of organic materials has been observed. An analysis can also be performed to model the temperature in the entire organic vapor spray deposition system. The temperature of the print head can be modeled. Uniform heating can be achieved by applying an ohmic heating current directly through the print head using a large area contact. If necessary, it can be charged, transferred, or transferred by applying a thin layer to the bottom side of the print head. ~ is a good thermal conductor, and the silicate layer helps to reduce: heat transfer to the metal moon. Experience has shown that for the actually fabricated geometry 'printing (iv), heating of about 4 () to 6 () w is required to reach 300 when it is very close to, and two frozen substrates. (:--Operating temperature. Direct measurement of P-degrees at multiple points is not feasible, but lower power measurements in air indicate uniform temperature across the print head. Continuous 147306.doc -27- 201102275 One of the outputs is driven by an isolated DC power supply to drive the heating current for the print head. This has been proven to eliminate the time domain thermal stress caused by the on/off control. The risk of arcing due to the power supply is both desirable. For a good approximation, it is also expected that the profile temperature in the region along the channel will be uniform with the modeling indication of Comsol. Temperature Modeling. Previous inventive studies by the inventors in the laboratory of OLED growth on a temperature controlled substrate chuck showed that the device can be grown at temperatures of about 360 K without serious effects in the device produced. Loss. This can be considered as an approximate maximum desired temperature specification for one of the substrate surfaces. Based on modeling, the heat transfer profile on one of the substrates near a 2 mm wide nozzle is shown in Figure 12. nozzle A double-cone nozzle with (7) wide aperture and 5 μπι tip to the substrate gap. The distance starts from the nozzle centerline. The model results are in good agreement with the analytical estimates. As can be seen in Figure 12, the nozzle itself has 4 turns. W/em2 heat flux hotspot. This compares to an average heat flux of 15 W/cm2. Since these hot spots are relatively small, there is only a moderate temperature increase compared to the surrounding substrate (which acts as a heat sink). Modeling prediction in COMSOL—only one of the hotspots in the hot spot has a steady state temperature increase. Although these individual hotspots are easy to manage, the overall thermal load from many of these hotspots is high. Liquid nitrogen cooling can be compared. It is preferred to drive sufficient heat transfer through a glass substrate to keep the surface of the substrate below the job. For this purpose, the 〇Vjp system has been equipped with a so-called feed system capable of cold-bundling the substrate holder to the following. The configuration of the deposited organic material at low substrate temperatures has the further advantage of reducing material migration 147306.doc -28- 201102275 and improved feature sharpness. The heat transfer in the steam generator can also be modeled. The heat transfer modeling of the steam generator has both a solid component and a fluid component. Preferably, the carrier gas is rapidly heated to the organic sublimation temperature prior to contacting the carrier gas with the organic source boat at the base of the generator. The modeling indication of ms〇i, which occurs very quickly due to the combination of the short characteristic length and the relatively high thermal conductivity of the gas under reduced pressure. It is assumed that there is one of the wall temperatures between the surrounding environment and the heated region of the source unit. For sharp transitions, heating the gas requires only one of the four claws to transform the length. The solid component of the heat transfer problem involves quantifying the sharpness of this transition. The source tube can be modeled as a one-dimensional problem. Since the tube has a thin wall, Therefore, the radial temperature gradient is minimal. The step-by-step assumes that the contents of the tube have a minimum of heat, which is assumed by one of the short thermal transition lengths of the carrier gas. The thermal equations for these assumptions and accounting for blackbody radiation are given by eq. II.C.l. Equation H.CU kT^ = <^r,T:)+h[T_Tc) where k is the thermal conductivity of the metal tube, (i) the thickness of the tube, and the Tc is the room temperature. / Assuming a 30 mTorr-chamber background pressure, the source cell will have a heat transfer coefficient 纟 residual to gas of h = 5 4 . After the linearized black body firing term, 'eqJLC' can be transformed into an equation called 1 (: 2. The characteristic length of this equation is 2 cm ' and gives the heated and unheated regions in the vapor generator tube (between One of the lengths of the gradient is roughly estimated. Therefore, it is necessary to heat the gas before it is moved through the organic vapor source [147306.doc -29- 201102275 a minimum length of heated tube. Equation II.C·2 dx V m) Modeling the mechanical deformation of a print head. Two possible causes of deformation of the print head have been identified. Thermally induced stress due to differences in uneven heating and thermal expansion can cause the print head to warp. The nozzle plate knife may have a relatively large pressure differential. Properly estimate the prolonged production of such deformations and design to minimize it to achieve flatness during printing (this is desirable for accurate printing) One of the print heads. It is believed that the most significant deformation to date has been due to the thermal stress in the stack of wafers in the print head. Use the river in COMSOL! 5 heat, structural interaction package to Modeling of vertical deflection due to thermal stress. Modeling the wafer stack with cylindrical coordinates. Assuming complete flatness at room temperature, once the film heating benefit is initiated, the wafer stack is calculated to bend downwards to center the board 20 μιη below the outer edge. The measurement of the printhead prototype on a Flexus film stress measurement device shows warpage so that the center of the wafer is higher than the outer edge 丨〇p. Figure 13 shows the temperature change A graph 13 10 of the height of the center of a wafer relative to the outer edge and a schematic diagram 1320 for setting the data. The data of a single wafer is displayed as a square, and the data of one column = stack is displayed. It is a diamond shape. The schematic diagram 132〇 shows one side of the citrate sleep layer! 324 and -_ 1322. Although the displacement of about 1G μηη is significant with respect to the spray spacing, it is expected that the flat line on the nozzle array itself is about 2 μη! The lower number is due to the nozzles being relatively close together near the center of the substrate and moving as a group when the wafer is deformed. Since the nozzle array 5 will bend downward, the plate will not hinder nozzle positioning, The nozzle can be placed at the dead center to minimize the bending of the substrate. Once properly calibrated, a non-contact height sensor can be measured at the operating temperature. The relative distance between the nozzle tip and the substrate. It is expected that the thermal warpage is the largest source of error 'but can be maintained at one of the manageable levels. For the system shown in Figure 3, the vapor generator itself is expected to respond to the force. , , and, for an extension of 2 〇〇. To prevent this from twisting the print head, the steam generator can be attached to the flange by the bellows illustrated in Figure 3. This prevents the flange from colliding with the print Head. Also consider the effect of pressure difference on wafer deformation. A diaphragm in the short-axis section® is given by eq II D 2 (the basis of which; Moore JH ^ Davis ' CC A MA Coplan ^ Building (10) (Western Perspectives Press; Third Edition (2〇〇2)) Respond to the maximum distribution of the load of the uniform distribution of the kidney. This is also the result of the double-tuned stress equation. As mentioned above, W is the vertical displacement, P is the force load, and the E system is the Young's modulus, and the t-plate Thickness. The width of the L-series plate. It is expected that a 5 〇μιη thick 'i _ wide Si diaphragm responds to 1 〇, 〇 00 Pa - the worst case cross-film pressure difference and outward bending is not a significant Deformation, however, the inverse inverse dependence of the deformation on the thickness of the diaphragm means that the membrane is more deformable for thinner rigid nozzle plates, but it is expected that such deformations will also be manageable. Equation II.D.2 ν» - Pl4 _ 32^3 The position mentioned on the Gekou' is due to the fact that the deformation across a relatively small nozzle array can be small even when there is a large f-shape across the remainder of the print head. , get the - just (10) RZ_25 demo model and compare it with a ιτ〇 glass target (1) 147306.doc -31 · 201102275 Line test. The sensor consists of a bundle of fibers. Some fibers emit light while others receive light. The distance between the beam and the reflection target is used to determine the degree of depletion between the emission fiber and the receiving fiber. The characteristic line of the Rz series sensor operates with two separate beams that correct for the difference in target reflectance. The signal is stable to 1 mV, and assuming a linear response of 〇._ ν/μιη, it can be obtained - Accuracy of 250 nm. The accuracy of the advertisement is eagle nm. The line of the sensor I·1 is clearly defined by the transparency of the ιτο and the intensity of the reflection from the far surface. If the ITQ target is located on the reflective surface, then the sensing The ITO target is not working properly. If the ITO target is mounted on a matt black surface, the linear range extends approximately 300 Mme to approximately half of the advertising value. A full linear range is available when measured from an opaque target. Other measurement techniques are used to compensate for these problems. Although the range of the sensor is limited, 3〇〇μηι is more than enough for the fine control system of the table height. The non-reflective substrate holder is preferred. 14 significant A plot of the displacement vs. voltage for one of the RZ 25 displacement sensors on a target. Figure 15 is not intended for use in microfabrication to prepare one of the tantalum and borosilicate wafers. UUrasil (Hayward, Calif.) obtained 151 Å on insulator S 〇 ) 〇 〇 〇 晶圆 晶圆 晶圆 晶圆 晶圆 晶圆 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 喷嘴 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The -100 μηι thick Si device layer 1516 is separated from a 315 μη thick Si treatment layer 1512 by a -1 to 3 pm si〇2 oxide layer ι514. A two-side polished (Dsp) 1 inch diameter, $(10) pm thick boron bismuth silicate glass wafer was obtained from W. (Bridge, MA). 147306.doc •32· 201102275 Use the LNF mask maker and s〇p for developing the chrome mask to create a mask for all four photolithographically defined patterns. Prior to the start of photolithography, an LpcvD is grown on both sides over the SOI wafer to form a 4 hard mask layer 1522, as illustrated by wafer 1520. Similarly, a hard mask layer 1562 of 20 nm Cr/5 〇〇Au / 2 〇 nm Cr / 500 nm Au is deposited on each side of the borosilicate glass wafer to prepare for etching, such as wafer 1560 Illustrated. Figure 16 shows the steps for making a print head and borosilicate treatment.

Si treatment is as follows. The nozzle entrance mask using spR 220 photoresist was patterned to form a layer of 4 layers from the S〇I wafer on top of FIG. The "Mountain # layer" is then etched away by a 150s deep reactive ion etch. The wafer is then etched in a 85 C 50 wt% K0H: solution for 100 minutes to form the internal tapered surface of the nozzle. The result of the step is shown in the wafer 163. The window for displacement sensing and optical alignment in the nozzle plate is also cut (not shown). The insulator layer of the SOI wafer forms one of the outlets defining each nozzle. The stop is etched. The 81^4 layer is then removed by a reactive ion etch or hot phosphoric acid etch. The results of this step are shown in the wafer 丨64〇.

Dephosphorized acid salt is treated as follows' and is adapted from Ciprian IHescu, F. E. H

Tay and J. Miao Sens. Act. A. 2 (133), 395-400 (2007). The metallized shed silicate glass wafer from Figure 15 was coated with 1 Å AZ-9260 resist on both sides and patterned on one side in a photolithographic pattern and patterned on the other side. Through hole pattern. Then alternately immersed in Transene GE-8148 gold | insect engraving for 4 minutes and Cyantek (3) seven chrome surname

L 147306.doc -33- 201102275 The engraving of the metal hard mask surname is 3G seconds. The results of these steps are shown in wafer 1610. The through-hole side of the wafer is attached to the backing wafer by means of stone ants. The vine's S is also affected by the engraving. Exposure channel side. The wafer is then immersed in 49% HF liquid until the channel is left to _ (four). Use the stylus profilometer to examine the depth of the engraving. The desired amount of etching is achieved within about 15 ―. The wafer was removed from its back and cleaned with hot trichloroethylene and then the wax side was attached to the backing wafer with wax and the HF solution was used to name the through holes. This etch passes through the wafer. The desired time is reached in about _ hours and the wafer is then cleaned with hot ethylene gas and the metal mask is removed with gold and chromium etchant. The results of these steps are shown in the wafer 丨62〇. It should be understood that the illustrated cross section shows a via having a via at each end, and there are other regions of the wafer in which there are no vias, vias, or both. An anodic bond is used to bond the different layers of the printhead. The bonding sequence illustrated is preferred for this particular embodiment due to the electrochemical nature of the anodic bonding process. Anodic bonding can be used to bond a sodium-containing glass to a metal or semiconductor. Once heated to 30 (TC to 40 (TC, Na+ in the glass becomes movable. One of the potentials of about 1000 V is applied from one of the anodes below the metal layer to one of the cathodes above the glass. The moving carrier moves in the glass Leaving the interface away from the depleted region with opposite charges. The movement of the cation allows the suspended oxygen atoms in the glass to freely form a chemical bond between the two materials. The anodic bonding is described in KM Kn〇wles et al. G. Wallis, Field Assisted Glass Sealing, 2(1),

Electrocomponent Science and Tech, 1975 > Anodic 147306.doc -34- 201102275 bonding, 51(5), International Materials Rev., 2006. The wafer bonding step is as follows. Boron silicate and si wafers were prepared for bonding by means of a Piranha purge. Subsequently, the Si wafer is immersed in the diluted HF to remove the surface oxide. The wafer is then visually aligned and then placed in a Suss SB-6 adapter. The wafers are bonded in vacuum at a temperature of 400 t by applying a voltage of 1 〇〇〇 v for 2 〇 minutes. The result of this step is shown in the wafer stack 丨65〇. A positive potential is applied to the side. In one embodiment, the backside of the borosilicate layer can be bonded to a Kovar backsheet using anodic bonding. This provides the printhead with a stronger tough seal surface. Once bonded, the disposal layer of the Si wafer is removed. Install the wafer to a chuck with paraffin. The wafers were then immersed in a tripartite remnant of 90% ΗΝ03, 9.5% HF, and 0.5% CHsCOOH stock solution. The wafer is continuously rotated and N2 is used to vent the etch bath to ensure a uniform etch. The desired amount of etching is achieved in about 50 minutes and the etching is allowed to continue until the Si 〇 2 surname stop is visible. It is preferable to stop the etching quickly because of the poor selectivity of the trilogy of money engraving to Si above 〇2. The wafer is removed from the chuck and the remaining butterfly is dissolved by means of dichloroethylene. Since the triad etchant does not have a strong selectivity for Si above Si 〇 2, a more selective trimming step is preferred. The remaining Si on the SiO 2 etch stop is removed by deep reactive ion etching (DRIE). DRIE is not used to remove all Si because it is significantly slower than the triad etchant. After the disposal layer was removed, the bottom side of the wafer was coated with AZ-9260 photoresist and patterned to cover the area where the bump would end at the end of the privacy with an anti-contact agent. By means of a reactive ion etching (RIE)

I S 147306.doc •35- 201102275 Remove the exposed SiO2. The results of this step are shown in wafer stack 1660. Then the error is left by the DRIE surname 40 to 50 μm. The completion of this remainder is monitored by profilometry. The results of this step are shown in wafer stack 1670. Subsequently, the photoresist is stripped and the remaining Si〇2 hard mask is removed by means of RIE. The results of this step are shown in wafer stack 1680. An ohmic contact consisting of 8 〇〇 nm A1, 50 nm Pt, and 500 nm Au is evaporated onto the opposite side of the wafer to allow the wafer to be addressed by a heating current. If the native Si does not have sufficient conductivity to achieve good heating, an additional thin % Τ 涂层 coating can be added over the nozzle plate. Finally, a Cu foil lead is attached to the electrode by means of a temperature conductive epoxy. The general structure of the manufactured OVJP print head and vapor generator is as follows. The organic source is stored at the end of the glass rod inserted into a tube that extends into a vacuum chamber and is heated at its distal ends. This system eliminates the problem of having to break a high temperature seal or disassemble a complex assembly for refilling material. OVJP operates at much higher pressures and much lower flow rates, which can result in higher vapor residence times. The volume between the organic vapor source and the nozzle array is kept as short as possible to eliminate the volume. Modeling indicates that the separate source and dilution streams are not helpful at this length scale. Although these features can be easily added, these features are not explicitly provided. In one embodiment, OVTP will ρ 糸 , and the shape factor first allows it to be attached to an 8"ConFlat bee. With a thin coating of a Cotronics RpcL" nd 919 high temperature ceramic adhesive, the coating is not coated with steel. The coated area is 2 147306.doc -36 - 201102275 7 inches and begins at the tip of the official G125. This coating provides a resistive surface on which a flexible nickel alloy wire is wound. Winding up to (4) - 〇 曹直" line will give the heater the right - resistance. After winding, (4) another -Resb〇nd 919 coating to seal the heater and make it cure. Right to reduce the emissivity, then These tubes can be plated with Ag. These domestic heaters are tighter than the % μ μ ^ strong, and unlike the glass fiber insulation, the tropical water produces particles. Unlike the high-g Le Zhao production commercial tropical, once Curing, the pottery will not leak 0 Figure 17 shows the - (iv) p feedthrough device - exploded view. For ease of illustration, two organic vapor sources are illustrated, but a larger number of sources can be used, such as in Figure 3. Six or even more are shown. The manifold (four) acts as a feedthrough device through which the gas travels to the printhead and can be easily and via the feedthrough without disconnecting the heat seal The organic source boat positioned very close to the print head during deposition is conveniently removed and replaced. As illustrated in Figure 3, the tube 172 leading to the print head extends from the manifold. Attached to tube 172. Gas feed device (10) can be packaged A gas seal for gas and a gas seal that allows the source boat to pass [the nano-fitting fitting 1740 is attached to the gas feed device 1730 and provides a source boat that can be easily broken and replaced. The dish (4) is disposed on the rod lake. The rod can be inserted through the (4) fitting (10), the gas feeding device (4), the tube (4) and the manifold 1710, and further extended through, for example, the bellows 3 4 0 of FIG. 3 and the related camp·ji 5 ., β a Han phaseg until the source boat 1?5〇 is very close to a row of print heads. The Nayong fittings 丨74〇 provides a seal. The specific non-limiting materials and dimensions used in the production-view system are as follows. (1) 147306.doc -37- 201102275. The 0.375"tube 172〇 from the manifold 1710 is terminated with a Swagelok fitting (gas feed unit 1730). The Swagelok seven-part 174 夹持 is clamped to At the far end of the T-shaped fitting, a 7-long glass rod 176〇 containing an organic boat 175〇 at its tip is inserted through the nano-ticket fitting 174. The rod 丨7 extends all the way to the printing 帛. Feeding from the intermediate connection of the T-tube fitting to the steam generator. Preferably, An electro-x_y motion stage is used to move the substrate relative to the nozzle array to draw the patterned organic film using OVJP. The nozzle array and the plane of the substrate preferably remain close to parallel to make the system effective soil = ° for optimal As a result, the substrate carrier preferably has a +degree of greater than (10) linear lines. The bearing on which the substrate carrier moves is preferably placed underneath the carrier. The simplest configuration will tie the two complete stacks linearly. The actuator is placed in the chamber (4). These actuators can be placed on top of the double ramp for fine level adjustment. This control can be manual, as it can be aligned after emptying However, the ζ adjustment is preferably an electric type to provide a high degree of control. Since the space inside the room is extremely precious, it is preferable to incorporate a continuator and a vacuum linear positioner and mount it outside. A manual rotation adjustment member can be similarly mounted to the outdoor portion. The vacuum system is preferably equipped with an electric x_y motion stage by means of a vertical VJP system. Motion parallel to the line orientation can be provided by a separate Aer〇techATS_50 station. Helpable - Customized actuation ϋ modified - Newport (Newp. The postal station provides line oriented motion. The substrate carrier can be compatible with the non-contact height sensor made by its anodized polishing on the top) It is located on top of a copper cooling block and is fed by a flexible officer to the copper cooling block via a 147306.doc •38- 201102275. The bracket can be removed via an adjacent glove box to allow for a non- Loading and unloading samples in an oxidizing environment. Thermal coating of SPI Apezon cold grease can be used to enhance thermal contact between the substrate, the carrier and the cooling block. A PhilTech RZ-25 optical displacement sensor can be used via one of the print heads. The window is observed to measure the distance to the substrate. The sensor consists of a bundle of fibers having one of the emitter fibers and the receiver fibers. The coupling between the two fiber types depends on the distance between the beam tip and a reflective surface. The sensor tip is held by a fiber holder that is in turn attached to one of the poles that connect the print head to the flange. The sensor signal is passed through a bundle of fibers Vacuum feedthrough is transmitted to the One of the external sensors. A preferred way of locating the pad marks on the substrate to align the features on the substrate. The print head preferably has a separate optical lens that allows for optical alignment. It is equipped with a CCD camera, suitable lens, illumination and software to allow alignment. These features are not present in current designs, but these features are well known and can be easily incorporated into a VJp system. Figure 1 8 shows One of the 〇vjp systems equipped with one of the alignment optics and the height sensor. The 0VJP system has many of the same features as illustrated in Figure 17. In addition, Figure 18i〇VJp system includes; The camera system includes a camera 181 〇, a projection lens 1812, and an objective lens 1814. The appropriate opening can be easily provided in the manifold and the print head. The guessing system of Fig. 18 also includes a height sensing. The configuration of Figure 18 has not actually been put into practice, but based on the disclosure herein 147306.doc -39- 201102275 The OVJP system can operate as follows. The nozzle can be perpendicular to the substrate plane and the height sensor can be calibrated. The plane of the print head is coincident with the plane of the substrate with the print head in the squirt and to the venting opening. The laser level and mirror are used on the back of the substrate table to align the light. A gap gauge can be used to make the head-to-substrate gap on each side of the substrate equal to the left and right alignment. The organic material is used to feed the organic material to the tip of the boron bismuth silicate glass rod. Passing a thermocouple through the inner diameter of the rod to a structure that separates the rod from the boat and is tightened in place. The rod is inserted through the seven fittings at the top of the deposition chamber. Its # end is within 3 mm of the print head. Preferably, the stop position is pre-measured to prevent damage to the print. The shell-substrate is placed in a chamber with a vent. Pass the gas feed line to - bypass the "Eustachian" tube, which equalizes the pressure between the printhead through hole and the chamber. The chamber is drained by $, and the ovjp is slowly heated to the operating temperature = °: 0VJP is at high vacuum, ie one of the LN2 machines to the substrate table is established. After taking it, seal the gas feed line from the Ostarc tube. After leveling, lower the space in which the nozzle is used to move the print head down. Then the print head and the steam generator are brought to a drop _ based on the thermal load of the print head - a sudden increase or by inferring the print head: = when the print: = sudden increase in the pressure of the organic source unit during use Hard contact between the boards. The height sensor readings can now be zeroed, and a carrier gas of force 1 could be fed into each deposition source. The organic vapor source should be heated to 2 to (10). c. Will print: I47306.doc 201102275 to 300 °C. The nozzle tip is brought to the side of the substrate 1G (four). The _fine z adjustment can be locked into a feedback loop along with the height sensor (not yet incorporated). The system is now being deposited and the pattern is determined by the movement of the seven motors. Once the pattern is printed, the deposition terminates the carrier gas stream and reopens the gas feed line to the Oostaki tube. After deposition, the substrate is lowered away from the print head. Slowly cool both the print head and the organic source unit. All such devices are preferably less than 1 〇〇 C prior to venting the chamber. It also raises the temperature through the freezer to above it. Preferred operating conditions include a chamber pressure of less than 丨 millitorr and freezing to one of the substrate holders. The organic vapor is sent to the crucible at a flow rate of 1 standard cubic centimeter per minute of the parent source via 1 to a pressure of the inert gas, and the vapor can be mixed or diluted by combining with the flow of the other source. . The print head is maintained at approximately 10 microns from the surface of the substrate. The substrate is on the print head; the surface is moved at a rate of 0.5 to 2 mm/s. An optical micrograph of the 35 thick _ quinolinol line is shown in Figure 19. Under preferred operating conditions, the printhead can draw a continuous line of organic material approximately 20 μm wide. Figure 19 shows optical micrographs of 35 (10) thick side 8 (8-hydroxyquinoline) aluminum lines drawn using a 〇VJp printhead at two different magnifications (images 191〇 and 192〇) on each side The upper system is surrounded by a deposition area estimated to be no more than 1 〇μιη wide. This is supported by scanning electron microscopy (SEM) and atomic force microscopy (AFM) images. Figure 2 shows the use of 〇v (4) at two different magnifications. The SEM image of the 35 1^ thick aiq line drawn by the print head (image 2〇丨〇 and 2〇2〇). Figure 21 shows the atomic force micrograph of the 1^ thick gossip 9 line drawn by 0VJP. A two-dimensional view of the height is displayed by gray scale (image [S ] 147306.doc -41 - 201102275 2110) and a track (image 2120) showing the thickness perpendicular to the main axis of the line using AFM. According to the profile AFM trajectory Estimating both the width and thickness of the line 0 To provide high resolution patterning of the multi-color OLED array, 〇Vjp is better able to deposit the material into a strictly defined line with minimal toner bleeding between the lines. Execution between the overspray of organic material in the area between the lines In a test, a very thick line is grown by slowly moving the stage below the print head. Although these features are much thicker than those used in actual electronic devices, they are grown. Allows fine-grained features (such as over-smearing) to be magnified enough to be measurable. The thickness of the lines is then evaluated by profilometry. The deposition has up to 2 (10) 〇〇 in the area where deposition is desired ( A line of thickness of 2 nm). Beyond the measured width of the 2 〇 line, an overspray that appears to extend beyond the edge of the line by 1〇μηΐ21〇〇nm or less is measured. The features found in the OLED are about ι times thicker. The false 疋 overspray thickness is proportional to the feature thickness, which would suggest that there is an ! nm or smaller overspray near the line drawn. Figure 22 shows this Isoline image pack 3 an optical micrograph 22 1 0 and a profilometer trace 222 〇. Inter-analytical photoluminescence is used to detect overspray in the area between the film lines: in a specially constructed line scan Thickness calibration measurement on the microscope. This system has A 1Q of the vertical agent is about 5 (four) - resolution and about 2 please _ detection threshold. - The initial scan shows a background overspray of about 5 nm. This interesting 'overspray height shirt looks like - The line (4) or the nearest line is related. This indicates that the overspray is reduced at startup rather than during actual printing. 147306.doc • 42· 201102275 is mitigated and can be minimized by a modified start-up procedure. Further downstream nozzles, the thickness of the wire is significantly reduced. It is believed that this is due to the fabrication of a particular printhead having a shallower fluid channel to improve crack resistance, and the effect can be easily eliminated by using larger channels. Line scan data is displayed in ^ 23. Figure 23 shows thickness correction line data for OVJP plots from A1Q. The Zeiss confocal epifluorescence microscope, one of the microscope and image analysis laboratories at the University of Michigan (UniVersity 〇f Michigan), was used to detect overspray at higher altitude = resolution. This microscope has a detection threshold similar to one of the line scanners but is otherwise more capable. Figure 24 shows an area of the OVJP deposition line using this system: A small amount of signal or un-debted signal is detected between the lines, indicating that one of the 3 nm or less overspray thicknesses is preferably calibrated from the tool by means of a sample of known film thickness, but there is no Signals between the lines indicate that a small amount, if any, of material is deposited in these areas. Figure 24 shows a confocal projection fluorescence micrograph of one of the VJp lines of A1Q. The image 2410 has a camper-light, intensity-two-dimensional image displayed by gray scales. The vertical arrow shows the direction of the outline scan as illustrated by the image, and the image 242 shows the intensity of the light along the line as a function of distance. It is to be understood that the various examples are intended to be illustrative only and are not intended to limit the scope of the invention. m "Examples and Lv, the material and structure of the essays described in this article can be invented by other materials. In this paper, the _ + t structure is degenerated without departing from the inventive nozzle geometry described in this r ^ 4 Shapes can be used for a variety of fs other than those illustrated in this article and only for example

L a J I47306.doc -43. 201102275 ovjp system configuration and print head. Similarly, the inventive printhead concept set forth herein can be used in a wide variety of 〇VjP system configurations in addition to the specific embodiments illustrated herein. Thus, it will be apparent to those skilled in the art that the present invention may be embodied in the specific embodiments and the preferred embodiments described herein. It should be understood that the various aspects of the invention and the specific configuration of the invention are not intended to be limiting. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 shows a cross section of four different nozzle geometries. Figure 2 shows a section of four different nozzle geometry taken along the direction perpendicular to the ___士士, hole/瓜瓜. Figure 3 shows a perspective view of an OVJP print head and holder. Figure 4 shows an exploded view of the print head. Figure 5 shows a photograph of various portions of a print head. Figure 6 shows a proof of one of the masks including the channel and the via. Figure 7 shows a scanning electron micrograph of the cross section of the actually fabricated rectangular nozzle and the nozzle inlet in Sl. Figure 8 shows a photograph of one of the mouth sides of the finished print head and a portion of the squirt 2 - scanning electron micrograph (10) μ) and nozzle orifices. Figure 9 shows a modeled deposition profile. Figure 1 shows the modeled pressure and temperature profiles. Figure 11 shows the estimated flow resistance and even the cloth. Vapor has been verified to all nozzles of the array 147306.doc -44· 201102275 Figure 12 shows a modeled heat transfer profile near a 20 mm wide nozzle. Figure 13 is a graph showing the temperature of the center of a wafer with respect to the temperature of the outer edge as a function of temperature and a setting for obtaining data. Figure 14 shows a plot of displacement vs. voltage for calibration of one of the philTech RZ-25 displacement sensors on a target. Figure 15 shows a process flow for preparing germanium and borosilicate wafers for microfabrication. Figure 16 shows the steps for the si and borosilicate treatment of a print head. Figure 17 shows an exploded view of a 〇VjP feedthrough. Figure 18 shows one of the 〇vjp systems with one of the alignment optics and the height sensor. Figure 19 shows an optical micrograph of a 35 1 thick A1Q (叁(8_hydroxysalina)) line drawn using a 0VJP printhead. Figure 2 shows an SEM image of a 35 nm thick A1Q line drawn using a 〇VJP printhead. The original of a thick material line of the 35 nm thick A1Q line Figure 21 shows the use of a 〇vjp print head to create a sub-force photomicrograph. Figure 22 shows the use of an OVJP to print a green photomicrograph and profilometer image. Figure 23 shows the data from the use. A line scan of the A1Q line drawn by a 0VJP print head. Figure 24 shows the use of light micrographs. One of the lines drawn by an OVJP print head is confocal

147306.doc •45- 201102275 [Main component symbol description] 110 Nozzle 120 Nozzle 130 Nozzle 140 Nozzle 210 Hole σ 220 Orifice 230 Orifice 240 Orifice 300 Organic vapor jet deposition system 310 Print head 320 Organic vapor source 330 Manifold 340 bellows 410 first layer 415 nozzle 420 second layer 422 through hole 424 channel 440 ohmic contact 510 first layer 520 second layer 610 channel 612 line 147306.doc -46- 201102275 614 line 616 line 620 through hole 700 profile 710 First layer 720 protrusion 730 aperture 740 nozzle 800 photo 802 nozzle array 804 bump 806 displacement sensor window 820 scanning electron micrograph (SEM) 1322 Si layer 1324 borosilicate layer 1510 insulator 矽Wafer 1512 Si Disposal Layer 1514 Si02 Oxide Layer 1516 Si Device Layer 1520 Wafer 1522 LPCVD Si3N4 Hard Mask Layer 1550 Borosilicate Glass Wafer 1560 Wafer 1562 Hard Mask Layer 147306.doc -47- 201102275 1610 Wafer 1620 Wafer 1630 Wafer 1640 Wafer 1650 Wafer Stack 1660 Wafer Stack 1670 Wafer Stack 1680 Crystal Round Stack 1710 Manifold 1720 Tube 1730 Gas Feeder 1740 Labet Accessories 1750 Source Boat Lone 1760 Rod 1810 Camera 1812 Projection Lens 1814 Objective 1910 Image 1920 Image 2010 Image 2020 Image 2110 Image. 2120 Image 2410 Image 2420 Image 147306.doc -48 -

Claims (1)

201102275 VII. Patent application scope: 1. A first device comprising: - a print head, further comprising a gas-tight first nozzle; a gas source wherein the first nozzle has an orifice, and The orifice has a mouth dimension in a direction perpendicular to the moving direction of the first weir; a minimum taper of eight 〇·5Μ to 5 〇〇 micrometers = the most mouth enters into the first nozzle - the first The nozzle, at a distance of 5 times the small size, has a small dimension perpendicular to the flow direction that is at least twice the smallest dimension of the first nozzle orifice. 2. In the first device of claim 1, the bowl is identified as A, and the print cartridge comprises a plurality of first nozzles hermetically sealed to the first source of the mill. 3. The first device of claim 1, wherein the print head further comprises two nozzles, the second nozzle being hermetically sealed to a different one-second gas source, the body, wherein the second nozzle has - An orifice having a maximum diameter of 5 μm to 5 μm in a direction perpendicular to the second hunger direction; wherein the ruler enters the second nozzle from the orifice At a distance five times the smallest dimension of the second nozzle orifice, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the second nozzle orifice. 4. The first device of claim 3, wherein the print head further comprises a second nozzle that hermetically seals to a third gas source different from the first gas source and the second gas source And 147306.doc 201102275 wherein the third nozzle has an orifice, the orifice having a minimum of 0.5 micrometer to 5 micrometers in the direction of the flow of the third nozzle; Eight of them: in the hole. Entering into the third nozzle is a distance of 5 times the small size of the third nozzle port, and the wide dimension straight to the flow direction is at least twice the minimum size of the third nozzle orifice . The first device of the month length item 4, wherein the print head comprises a plurality of first nozzles hermetically sealed to the first gas source, and a plurality of first and second gas sources sealed to the second gas source a nozzle and a plurality of third nozzles hermetically sealed to the third gas source. 6. The first device of claim 1, wherein the first nozzle has a constant profile from the orifice to a distance from the orifice into the first nozzle, the distance being the first nozzle 2 times the minimum size of the orifice. 7. The first device of claim 1, wherein the _ nozzle is in a range of 〇 times to 2 七 of the minimum dimension of the first nozzle in a direction perpendicular to the first nozzle flow direction # direction This minimum dimension of the orifice continuously increases with the distance from the orifice of the «Hay nozzle. 8. The first device of claim 1, wherein the first nozzle is in a range of 〇 to 2 times the minimum dimension of the first nozzle in a direction perpendicular to the flow direction of the first nozzle The minimum dimension of the orifice increases linearly with distance from the orifice of the first nozzle. 9. The first device of claim 1, wherein the first nozzle is formed from a metal or a ceramic. 10. The first device of claim 1, wherein the first nozzle is formed by a crucible. 147306.doc -2- 201102275 11. 12. 13. 14. 15. 16. 17. The first device of claim 1, wherein the first nozzle has an orifice, the orifice being in the first nozzle The direction in which the flow direction is perpendicular has a minimum size of from 1 μm to 500 μm. The first device of claim 1, wherein the first nozzle has an orifice having a minimum dimension of from 2 μm to 100 μm in a direction perpendicular to a flow direction of the first nozzle. The first device of claim 1, wherein the first nozzle has an orifice having a minimum dimension of from 0.5 micrometers to 20 micrometers in a direction perpendicular to a flow direction of the first nozzle. The first device of claim 1, wherein the first nozzle is circular in cross section perpendicular to the flow direction of the first squirting flow. The first device of claim 1, wherein the first nozzle is rectangular in cross section perpendicular to the flow direction of the first nozzle. The first device of claim 3, wherein the first device further comprises: a 5th gas source and a second gas source, wherein the thermal barrier is disposed at the print head and the first gas source and the first Between the two gas sources, and an independently controllable heat source for each of the print head, the first gas source, and the gas source. The first device of claim 1, wherein the first device further comprises: a first gas source, the first gas source further comprising a first sublimation and a second sublimation chamber; a thermal barrier disposed at Between the print head and the first gas source; a control heat source can be bundled for the print head, the first sublimation chamber, and & 147306.doc 201102275 18. wherein the orifice is formed from the column Each of the second sublimation chambers is printed, such as the first device of the request item, in the head-protrusion. The method comprises: 19. A method, providing a -th device, the first device comprising: a print master, further comprising a gas-tight seal to a first gas source - a nozzle; /, wherein the first nozzle has An orifice having a minimum dimension of from 0.5 micrometers to 500 micrometers in a direction perpendicular to the first squirting direction; wherein the first nozzle is inserted into the first nozzle from the orifice a distance of 5 times the minimum dimension of the orifice, the smallest dimension perpendicular to the alpha direction being at least twice the smallest dimension of the first nozzle orifice; ejecting a gas jet from the first nozzle . The method of claim 19, wherein the printhead further comprises: a second nozzle that is hermetically sealed to a second gas source different from the first gas source, wherein the second nozzle has an orifice 'The orifice has a minimum dimension of 5 micrometers to 5 micrometers in a direction perpendicular to the flow direction of one of the second nozzles; the second nozzle is at a distance from the second jet, perpendicular to the middle , the minimum size of the opening from the orifice to the mouth is 5 times 147306.doc -4. 201102275 The size of the small size of the one-year-old is at least twice the size of the second small size; And wherein the method further comprises maintaining a temperature at which the source and the word 1L are controlled at the j-head, the first source of the second gas. 2. The method of claim 20, wherein: the gas supplied by the first gas source comprises a first organic material having a first sublimation temperature; the gas provided by the second gas source comprises a first The second organic material, the second organic material, has a second sublimation temperature that differs from the sublimation temperature of the first organic material by at least 10 degrees Celsius. 147306.doc