TW201100956A - Radiation-sensitive resin composition, spacer and insulating film for organic EL display element and method for forming the same - Google Patents

Radiation-sensitive resin composition, spacer and insulating film for organic EL display element and method for forming the same Download PDF

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TW201100956A
TW201100956A TW099109302A TW99109302A TW201100956A TW 201100956 A TW201100956 A TW 201100956A TW 099109302 A TW099109302 A TW 099109302A TW 99109302 A TW99109302 A TW 99109302A TW 201100956 A TW201100956 A TW 201100956A
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Taiwan
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radiation
mass
resin composition
sensitive resin
methyl
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TW099109302A
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Chinese (zh)
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TWI457703B (en
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Masaaki Hanamura
Hiroyuki Maruyama
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Jsr Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Electroluminescent Light Sources (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

An object of the present invention is to provide a radiation-sensitive resin composition having not only sufficient resolution but also high durability to resist-stripper solution, besides, it has both excellent radiation sensitivity and high light-screening ability during heating. The present invention relates to a radiation-sensitive resin composition for forming spacer and insulating film, which comprises [A] an alkali soluble resin of a copolymer (it is formed by copolymerizing (a1) an unsaturated carboxylic acid and/or an unsaturated carboxylic acid anhydride and (a2) a monomer containing a compound selected from a group consisted of a compound containing phenol skeleton represented by formula (I), a compound represented by formula (II) and a compound represented by formula (III)), [B] 1, 2-quinone diazido compound and [C] thermosensitive pigment.

Description

201100956 六、發明說明: 【發明所屬之技術領域】 本發明係關於隔壁及絕緣膜形成用之感放射線性樹脂 組成物、有機EL顯示元件用隔壁及絕緣膜、及其形成方 法。再詳言之’本發明係關於利用紫外線、遠紫外線、X , 線等放射線’適於隔壁及絕緣膜之形成的感放射線性樹脂 組成物’由該等所形成之有機EL顯示元件用隔壁及絕緣 膜、及該隔壁及絕緣膜的形成方法。 〇 【先前技術】 有機EL顯示元件因自行發光,則無視角依存性(view angle dependence) ’又,因係固體元件,故耐衝擊性優異、 低電壓驅動、低消耗電力及低溫區域之動作穩定性高等, 相較於液晶顯示元件而有各種優點。有機EL顯示元件,由 於具有該等優點’尤其是對可移動終端或車內機器等行動 式用途之可適用性的期待很高,硏究非常盛行。 此種有機EL顯示元件,一般係以下列方法製造。首先, ❹ 在基板上形成錫摻雜氧化銦(1TO)等透明電極(電洞注入電 極)及電洞輸送層之圖形。接著、在被動型有機EL顯示元 件的情況下’在形成絕緣膜之圖形及陰極隔壁之圖形後, 使有機EL·層、電子輸送層及陰極(電子注入電極)藉由蒸鍍 而圖形化。又’在主動型有機EL顯示元件的情況下,在形 成被用作ITO圖形、有機EL層之隔壁的絕緣膜之圖形後, 藉由掩罩(masking)法或噴墨法等而形成有機EL層之圖 形’接著形成電子輸送層及陰極(電子注入電極)。在此, 201100956 有機EL層方面,係使用如Alq3、BeBq3般之摻雜喹吖酮 (quinacridone)或香豆素於基材母體的材料,在陰極材料 方面’係使用如鎂或銀般之以低功函數之金屬作爲主體的 材料。 » 近年,爲因應高精細化之要求,吾人正硏討開口率更高 . 的有機EL顯示元件。但是,因下述理由,對開口率之提高 則有一定之界限。亦即,在被動型有機EL顯示元件中,要 提高開口率’就必須減少絕緣膜及陰極隔壁之圖形寬,不 ◎ 過在該等之部分,由於吾人要求一定強度,及從解像度之 點觀之,圖形寬之減少有其界限,故無法充分獲得高開口 率。又’在主動型有機EL顯示元件中,爲了避免每一像素 之IT0圖形之短路,故有必要在像素間設置—定之間隔, 故對開口率之提高有其界限。 最近,吾人正硏討可實現更高開口率的構造之主動型有 機EL顯不兀件。此種主動型有機EL顯示元件,可以例如 Q 下列方法來製造。首先,在玻璃等基板上形成驅動用端子, 在其上形成兼有平坦化膜的第一絕緣膜。接著,在其上, 形成IT0等透明電極(電洞注入電極)之圖形。此時之圖形 形成,通常係依照濕蝕刻法。再者在其上,藉由掩罩法來 形成電洞輸送層之圖形。接著,以被用作ITO圖形及有機 EL層之隔壁的第二絕緣膜之圖形 '以及有機EL層之圖形 係藉由掩罩法或噴墨法等而形成,接著依順序形成電子輸 送層及陰極(電子注入電極)。此時,爲了取得IT0電極(電 201100956 洞注入電極)與驅動用端子之導通,則在第一絕緣膜有必要 形成1至15μπι左右之貫穿孔或者:3形的凹處。 然而,周知是有機EL發光層,即使在低分子發光層中, 或高分子發光層中,一與水分接觸則迅速劣化,而使其發 光狀態受到阻礙。吾人認爲此種水分,有自環境滲入之情 形,和有在吸附水等之形態,絕緣膜材料所含的微量水分 緩緩地滲入有機EL層之情形。 直至目前爲止,並無提案可形成具有以下性質之絕緣膜 的材料:爲實現更高開口率而可形成必要的貫穿孔或者Π 形凹處,且具有充分解像度、平坦化性能優異,同時對透 明電極形成時所使用之光阻剝離液具有高耐性,再者,可 防止阻礙發光的雜質(主爲水分)之滲入。 一方面,以提高使用有機EL顯示元件的顯示裝置中的 對比,並提高可見度爲目的,吾人嘗試使遮光性保持於絕 緣膜及/或元件分離構造體之基部(參照例如日本特開平 11-273870號公報、日本特開2002-116536號公報)。但是, 在該等感放射線性樹脂組成物中,爲了充分提高遮光性硬 化膜或黑色矩陣之遮光性,則有必要使用相當量的著色 劑。在使用此種多量著色劑之情形,由於已曝光的放射線 係被著色劑所吸收,故會有使塗膜中放射線之有效強度降 低,且使圖形形成用之放射線感度(曝光感度)降低等之不 適合之處。 在不使放射線感度降低,並賦予隔壁或絕緣膜遮光性的 具體方法,則有添加感熱性材料與顯色劑於酚醛清漆樹脂 201100956 等含鹼可溶性樹脂與重氮醌的正型光阻之方法(參照例如 日本特開平10-170715號公報、日本特開2008-122501號 公報)。在該方法中,藉由加熱,而可使用預先將黑色發色 的感熱性材料與顯色劑添加於內的正型感放射線性樹脂組 成物。此種感放射線性樹脂組成物中,在曝光前感熱性材 料在未反應之狀態,由於並不呈現黑色,故樹脂組成物本 身不具遮光性,放射線感度不會惡化。 但是,在有機EL顯示元件中的圖形,或隔壁或者絕緣 膜形成所必需的溫度,一般在2 0 0 °C附近。因此,在日本 特開平1 0- 1 707 1 5號公報或日本特開200 8 - 1 22 5 0 1號公報 所揭示之顯色劑與發色劑中,被指摘對該溫度之耐熱性並 不充分,不只是無法獲得滿意的遮光性,而且在圖形形成 時進行昇華,有燒成爐污染等之危險性。 先行技術文獻 專利文獻 專利文獻1日本特開平11-273870號公報 專利文獻2日本特開2002-116536號公報 專利文獻3日本特開平1 〇 _ 1 7 〇 7 1 5號公報 專利文獻4日本特開2008-122501號公報 【發明內容】 發明欲解決課題 本發明係根據上述情事而完成者,其目的係提供一種感 放射線性樹脂組成物’具有可形成絕緣膜之貫穿孔或者〕 形凹處的充分解像度,平坦化性能優異,同時對於透明電 201100956 極形成時所使用光阻剝離液具有高耐性、且兼具優異放射 線感度與加熱時之高遮光性,係用以形成有機EL顯示元件 之隔壁及絕緣膜用的感放射線性樹脂組成物 解決課題之手段 爲解決上述課題所完成之本發明, 係一種感放射線性樹脂組成物,其含有: Ο [A] 鹼可溶性樹脂,其係將含有(al)選自不飽和羧酸及不 飽和羧酸酐之至少一者、以及(a2)選自下述式(I)所示含酚 骨架不飽和化合物、下述式(II)所示化合物及下述式(III) 所示化合物構成群組之化合物的單體予以共聚而成之共聚 物, [B] l,2-醌二疊氮基化合物,及 [C] 感熱色素, 〇[Technical Field] The present invention relates to a radiation sensitive resin composition for forming a partition wall and an insulating film, a partition wall for an organic EL display device, and an insulating film, and a method for forming the same. Further, the present invention relates to a radiation-sensitive resin composition for forming a partition wall and an insulating film by radiation such as ultraviolet rays, far ultraviolet rays, X rays, and the like, and a partition wall for an organic EL display element formed by the above. An insulating film, and a method of forming the partition and the insulating film. 〇[Prior Art] Organic EL display elements have no viewing angle dependence due to self-illumination. Also, due to solid components, excellent impact resistance, low voltage drive, low power consumption, and low temperature operation are stable. High performance, and various advantages compared to liquid crystal display elements. The organic EL display element is highly promising due to the high degree of expectation of having such advantages, especially for mobile applications such as mobile terminals or in-vehicle devices. Such an organic EL display element is generally produced by the following method. First, 图形 a pattern of a transparent electrode (hole injection electrode) such as tin-doped indium oxide (1TO) and a hole transport layer is formed on the substrate. Next, in the case of a passive organic EL display device, the organic EL layer, the electron transport layer, and the cathode (electron injection electrode) are patterned by vapor deposition after forming the pattern of the insulating film and the pattern of the cathode partition. In the case of the active organic EL display device, after forming a pattern of an insulating film used as a partition wall of an ITO pattern or an organic EL layer, an organic EL is formed by a masking method, an inkjet method, or the like. The pattern of layers 'then forms an electron transport layer and a cathode (electron injection electrode). Here, in the aspect of the organic EL layer of 201100956, a material such as Alq3 or BeBq3 doped with quinacridone or coumarin on the substrate precursor is used, and in terms of the cathode material, it is used such as magnesium or silver. The metal of the low work function is the material of the main body. » In recent years, in response to the demand for high definition, we are begging for organic EL display components with higher aperture ratios. However, for the following reasons, there is a limit to the increase in the aperture ratio. That is, in the passive organic EL display device, in order to increase the aperture ratio, it is necessary to reduce the pattern width of the insulating film and the cathode barrier, and it is not necessary to pass through these portions, since we require a certain intensity and a viewpoint from the resolution. There is a limit to the reduction in the width of the pattern, so that a high aperture ratio cannot be sufficiently obtained. Further, in the active organic EL display device, in order to avoid a short circuit of the IT0 pattern of each pixel, it is necessary to provide a predetermined interval between the pixels, so that there is a limit to the improvement of the aperture ratio. Recently, we are begging for an active organic EL display that can achieve a higher aperture ratio. Such an active organic EL display element can be manufactured, for example, by the following method. First, a driving terminal is formed on a substrate such as glass, and a first insulating film having a planarizing film is formed thereon. Next, a pattern of a transparent electrode (hole injection electrode) such as IT0 is formed thereon. The pattern is formed at this time, usually in accordance with the wet etching method. Further, on this, a pattern of the hole transport layer is formed by a mask method. Then, the pattern of the second insulating film used as the partition wall of the ITO pattern and the organic EL layer and the pattern of the organic EL layer are formed by a mask method, an inkjet method, or the like, and then an electron transport layer is formed in order. Cathode (electron injection electrode). At this time, in order to obtain conduction between the IT0 electrode (electrical 201100956 hole injection electrode) and the driving terminal, it is necessary to form a through hole of about 1 to 15 μm or a three-shaped recess in the first insulating film. However, it is known that the organic EL light-emitting layer is rapidly degraded in contact with moisture even in the low molecular light-emitting layer or the polymer light-emitting layer, and its light-emitting state is hindered. In the case where the water is infiltrated into the organic EL layer, the amount of water contained in the insulating film material is gradually infiltrated into the organic EL layer. Up to now, there has been no proposal to form a material having an insulating film which can form a necessary through hole or a 凹-shaped recess for achieving a higher aperture ratio, and has sufficient resolution, excellent flatness, and transparency. The photoresist stripping liquid used for electrode formation has high resistance, and further, it is possible to prevent penetration of impurities (mainly moisture) which hinder light emission. On the one hand, in order to improve the contrast in the display device using the organic EL display element and to improve the visibility, it has been attempted to maintain the light-shielding property at the base of the insulating film and/or the element isolation structure (see, for example, Japanese Patent Laid-Open No. 11-273870) Japanese Patent Laid-Open Publication No. 2002-116536. However, in such a radiation sensitive resin composition, in order to sufficiently improve the light blocking property of the light-shielding hardened film or the black matrix, it is necessary to use a considerable amount of the coloring agent. In the case where such a large amount of the coloring agent is used, since the exposed radiation is absorbed by the coloring agent, the effective intensity of the radiation in the coating film is lowered, and the radiation sensitivity (exposure sensitivity) for pattern formation is lowered. Not suitable. A method of adding a heat-sensitive material and a color developing agent to a positive-type resist containing an alkali-soluble resin and a diazonium, such as a novolak resin 201100956, in a specific method of reducing the radiation sensitivity and imparting light shielding properties to the partition wall or the insulating film (Japanese Patent Laid-Open No. Hei 10-170715, JP-A-2008-122501). In this method, by heating, a positive-type radiation-sensitive resin composition in which a black-colored heat-sensitive material and a color developer are added in advance can be used. In such a radiation-sensitive resin composition, since the heat-sensitive material is not in a state of being unreacted before exposure, the resin composition itself does not have a light-shielding property, and the radiation sensitivity does not deteriorate. However, the pattern in the organic EL display element, or the temperature necessary for the formation of the partition walls or the insulating film, is generally around 200 °C. Therefore, in the developer and the color former disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. Insufficient, not only is it impossible to obtain a satisfactory light-shielding property, but also sublimation at the time of pattern formation, and there is a danger of contamination of the firing furnace. Japanese Laid-Open Patent Publication No. JP-A-2002-116536 (Patent Document No. JP-A-2002-116536) Patent Document No. JP-A-2002-116536 SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide a radiation sensitive resin composition having a through hole or a concave portion in which an insulating film can be formed. It has excellent resolution and flattening performance, and has high resistance to the photoresist stripping liquid used for forming the transparent electrode 201100956, and has excellent radiation sensitivity and high light-shielding property during heating. It is used to form the adjacent wall of the organic EL display element. Solution to the problem of the radiation-sensitive resin composition for an insulating film. The present invention has been made in order to solve the above problems, and is a radiation-sensitive resin composition containing: Ο [A] an alkali-soluble resin, which will contain (al) And at least one selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides, and (a2) selected from the group consisting of phenolic skeletons represented by the following formula (I) a copolymer obtained by copolymerizing a saturated compound, a compound represented by the following formula (II) and a compound represented by the following formula (III) to form a compound of the group, [B] 1,2-quinonediazide group Compound, and [C] sensible pigment, 〇

C H2=CC H2=C

(I)(I)

201100956201100956

(式(I)中,R1爲氫原子或碳數1至4之烷基;R2〜R6係 〇 相同或相異,爲氫原子、羥基或碳數1至4之烷基;B爲 單鍵、-COO-、或- CONH-: m爲0至3之整數,但R2至 R6之至少1個爲羥基;式(II)中,R1爲氫原子或碳數1至4 之烷基;Y1及Y2係相同或相異,爲氫原子或碳數1至6 之烷基;X1至X4係相同或相異,爲氫原子、碳數1至4 之烷基或鹵素原子;Z爲單鍵或- 0(CH2)w-,w爲1至6之 整數;式(III)中,R1爲氫原子或碳數1至4之烷基;Z爲 單鍵或- 〇(CH2)w-,w爲1至6之整數)。 〇 w 該隔壁及絕緣膜形成用感放射線性樹脂組成物,因含 有:作爲鹼可溶性樹脂及顯色劑兩者作用的不飽和羧酸等 以及含酚骨架不飽和化合物等之共聚物與感熱色素,故具 有在隔壁及絕緣膜形成時對高溫的耐熱性,可防止顯色劑 之昇華,同時,可獲得除了優異放射線感度及顯影性,再 加上加熱時之高遮光性。 該感放射線性樹脂組成物中的[A]成分之鹼可溶性樹脂 宜爲除了含有:(al)成分及(a2)成分,再加上(a3)含環氧基 -10- 201100956 不飽和化合物的單體予以共聚而成共聚物。作爲[A]成分之 鹼可溶性樹脂的共聚物之成分,係藉由使用此種含環氧基 不飽和化合物,而可進一步提高由該感放射線性樹脂組成 物所形成之隔壁及絕緣膜之耐熱性及表面硬度。 相對於[A]成分之鹼可溶性樹脂100質量份,該感放射 線性樹脂組成物中的[C]成分之感熱色素之含量宜爲0.1質 量份以上、30質量份以下。藉由設定[C]成分之感熱色素之 含量於此種範圍,可使對熱的吸收感度,或放射線感度、 〇 耐熱性、及耐溶劑性保持於適切的等級。 又,本發明之有機EL顯示元件用隔壁及有機EL顯示元 件用絕緣膜之形成方法,包含:(1 )使該感放射線性樹脂組 成物之塗膜形成於基板上之步驟; (2) 在步驟(1)形成的塗膜之至少一部分,照射放射線之 步驟; (3) 使於步驟(2)照射放射線之塗膜予以顯影之步驟;及 Q (4)使於步驟(3)顯影之塗膜予以加熱之步驟。 使用該感放射線性樹脂組成物,藉由上述步驟,製造有 機EL顯示元件之隔壁及絕緣膜之情形,由於在曝光前組成 物所含的感熱色素呈未反應之狀態,故無法顯現遮光性, 不過在曝光後經加熱時,則顯示高遮光性,具備具該隔壁 及絕緣膜的有機EL顯示元件的顯示裝置之對比極爲良好。 發明效果 如上述說明,本發明之感放射線性樹脂組成物,由於係 將預定之共聚物的鹼可溶性樹脂作爲顯色劑使用,故在隔 -11- 201100956 壁及絕緣膜形成時具有對高溫的耐熱性,可防止顯色劑之 昇華,同時可獲得除了優異放射線感度、顯影性之外,再 加上加熱時之高遮光性。 【實施方式】 實施發明之形態 本發明之隔壁及絕緣膜形成用感放射線性樹脂組成物 含有:[A]成分之鹼可溶性樹脂、[B]成分之1,2-醌二疊氮 基化合物、[C]成分之感熱色素、及其他任意成分。茲就各 〇 v 成分說明如下。 [A]成分 [A]成分係將含有(al)選自不飽和羧酸及不飽和羧酸酐 之至少一者;以及(a2)選自上述式(1)所示含酚骨架不飽和 化合物、上述式(1 1)所示化合物、及上述式(111)所示化合 物,所構成群組之化合物的單體予以共聚而成之共聚物。 以下,該共聚桃稱爲「共聚物[A]」。共聚物[A],係將除 Q 了含有:該化合物(al)及化合物(a2)之外’再加上含有:(a3) 含環氧基不飽和化合物及/或(a4)該等化合物(al)至(a3)以 外之具有自由基聚合性的不飽和化合物的單體予以共聚而 成之共聚物。共聚物[A]雖爲鹼可溶性樹脂,不過在感放射 線性樹脂組成物中亦作用爲顯色劑。根據含有共聚物[A] 的感放射線性樹脂組成物,可得除了隔壁及絕緣膜形成時 的高耐熱性、高放射線感度、高顯影性之外,再加上加熱 時優異的遮光性。 -12- 201100956 共聚物[A]係可藉由在溶劑中 '聚合引發劑之存在下, 使化合物(a 1)及(a2)、以及任意之化合物(a3)及(a4)予以自 由基聚合而製造。共聚物[A],根據化合物(a1)、(a2)、(a3) 及(a4)所衍生之構成單位之合計,由化合物(a 1)所衍生之構 成單位較佳含有5至40質量°/»、特佳含有1〇至30質量%。 藉由使由化合物(al)所衍生之構成單位於此種比率使用’ 而可在共聚物之顯影步驟中使相對於鹼水溶液的溶解 性控制於適切的範圍。 化合物(al)係具有自由基聚合性的不飽和竣酸及/或不 飽和羧酸酐。化合物(al)方面’有例如單羧酸、二羧酸、 二羧酸之酐、多價羧酸之單〔(甲基)丙烯醯氧烷基〕酯、 兩末端具有羧基與羥基的聚合物之單(甲基)丙烯酸酯、具 有羧基之多環式化合物及其酐等。 該等化合物(al)之具體例方面,單羧酸有例如丙烯酸、 甲基丙烯酸、巴豆酸等; 二羧酸有例如順丁烯二酸、反丁烯二酸、檸康酸、中康 酸、伊康酸等; 二羧酸之酐有例如上述二羧酸所例示的化合物之酐等; 多價羧酸之單〔(甲基)丙烯醯氧烷基〕酯,有例如琥珀 酸單〔2-(甲基)丙烯醯氧乙基〕酯、酞酸單〔2-(甲基)丙烯 醯氧乙基〕酯等; 兩末端具有羧基與羥基的聚合物之單(甲基)丙烯酸酯, 有例如ω-羧聚己內酯單(甲基)丙烯酸酯等; -13- 201100956 具有羧基的多環式化合物及其酐有例如5_羧雙環[2 2 i 庚-2-烯、5,6-二羧雙環[2.2.1]庚-2-烯、5-羧基-5-甲基雙環 [2.2.1]庚-2-嫌、5 -竣基-5-乙基雙環[2.2.1]庚-2-嫌、5 -殘基 -6-甲基雙環[2.2.1]庚-2-嫌、5-殘基-6-乙基雙環[2.2.1]庚 -2-烯、5,6-二羧雙環[2·2·1]庚-2-烯酐等。 該等化合物(a 1)中,宜爲使用單羧酸、二羧酸之酐。其 中尤其是丙烯酸、甲基丙烯酸、順丁烯二酸酐,由與其它 化合物之共聚反應性、對鹼水溶液的溶解性、及取得容易 性之觀點而Η ’可適當使用。該等化合物(al)可單獨或者 組合使用。 共聚物[A]根據化合物(al)、(a2)、(a3)及(a4)所衍生之 構成單位之合計,化合物(a2)所衍生之構成單位較佳爲含 有1至5 0質量%、特佳爲含有3至40質量%。藉由使用化 合物(a2)所衍生之構成單位1質量%以上,而可提高感放射 線性樹脂組成物之放射線感度。一方面藉由使該構成單位 之量設爲50質量%以下,而在隔壁及絕緣膜之形成中的顯 影步驟中,可防止對鹼水溶液的溶解性過剩。 化合物(a2)係選自上述式(I)所示含酚骨架不飽和化合 物' 上述式(II)所示之化合物、及上述式(ΠΙ)所示之化合物 所構成群組的化合物。 含有上述式(I)所示酚骨架的不飽和化合物,依照B與m 之定義,而可分類成下述式(IV)至(VIII)所示化合物。 -14 - (17)201100956 R1(In the formula (I), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R2 to R6 are the same or different and are a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 4 carbon atoms; and B is a single bond. , -COO-, or -CONH-: m is an integer from 0 to 3, but at least one of R2 to R6 is a hydroxyl group; in the formula (II), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; Y1 And Y2 are the same or different and are a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; X1 to X4 are the same or different and are a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or a halogen atom; and Z is a single bond. Or - 0(CH2)w-, w is an integer from 1 to 6; in the formula (III), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; Z is a single bond or - 〇(CH2)w-, w is an integer from 1 to 6). 〇w The radiation-sensitive resin composition for forming a partition wall and an insulating film contains an unsaturated carboxylic acid or the like which acts as both an alkali-soluble resin and a color developing agent, and a copolymer containing a phenol skeleton unsaturated compound and a thermosensitive dye. Therefore, it has heat resistance to high temperature at the time of formation of the partition wall and the insulating film, and can prevent sublimation of the color developing agent, and at the same time, high light-shielding property in addition to excellent radiation sensitivity and developability, and heating. The alkali-soluble resin of the component [A] in the radiation-sensitive resin composition is preferably contained in addition to the (al) component and the (a2) component, and (a3) an epoxy group-containing epoxy group-10-201100956. The monomers are copolymerized to form a copolymer. The component of the copolymer of the alkali-soluble resin of the component [A] can further improve the heat resistance of the partition wall and the insulating film formed of the radiation-sensitive resin composition by using such an epoxy group-containing unsaturated compound. Sex and surface hardness. The content of the thermosensitive dye of the component [C] in the radiation sensitive linear resin composition is preferably 0.1 part by mass or more and 30 parts by mass or less based on 100 parts by mass of the alkali-soluble resin of the component [A]. By setting the content of the thermosensitive pigment of the component [C] in such a range, the heat absorption sensitivity, or the radiation sensitivity, the heat resistance, and the solvent resistance can be maintained at an appropriate level. Further, the method for forming an insulating film for an organic EL display device of the present invention and an insulating film for an organic EL display device includes: (1) a step of forming a coating film of the radiation sensitive resin composition on a substrate; (2) At least a part of the coating film formed in the step (1), a step of irradiating the radiation; (3) a step of developing the coating film irradiated with the radiation in the step (2); and Q (4) coating the developing film in the step (3) The step of heating the film. When the barrier layer of the organic EL display device and the insulating film are produced by the above-described steps, the sensible dye contained in the composition before exposure is unreacted, and the light-shielding property cannot be exhibited. However, when heated after exposure, high light-shielding property is exhibited, and the display device having the organic EL display element having the partition wall and the insulating film is extremely excellent in comparison. Advantageous Effects of Invention As described above, since the radiation-sensitive resin composition of the present invention is used as a color developing agent by using an alkali-soluble resin of a predetermined copolymer, it has a high temperature at the time of forming a wall and an insulating film from 11 to 201100956. The heat resistance prevents the sublimation of the color developing agent, and at the same time, it is possible to obtain high light-shielding properties in addition to excellent radiation sensitivity and developability, and heating. [Embodiment] The radiation sensitive resin composition for forming a partition wall and an insulating film of the present invention contains an alkali-soluble resin of the component [A], a 1,2-quinonediazide compound of the component [B], Sensible pigment of [C] component, and other optional components. The following is a description of each 〇 v component. The component [A] of the component [A] contains at least one selected from the group consisting of an unsaturated carboxylic acid and an unsaturated carboxylic acid anhydride; and (a2) a phenolic skeleton-containing unsaturated compound selected from the above formula (1). A compound obtained by copolymerizing a compound represented by the above formula (1 1) and a compound represented by the above formula (111), and a monomer of the compound of the group. Hereinafter, the copolymerized peach is referred to as "copolymer [A]". The copolymer [A], which contains, in addition to Q, the compound (al) and the compound (a2), further contains: (a3) an epoxy group-containing unsaturated compound and/or (a4) the compounds A copolymer obtained by copolymerizing a monomer having a radical polymerizable unsaturated compound other than (a) to (a3). The copolymer [A] is an alkali-soluble resin, but functions as a color developing agent in the radiation-sensitive linear resin composition. According to the radiation-sensitive resin composition containing the copolymer [A], it is possible to obtain high heat resistance, high radiation sensitivity, and high developability in the formation of the partition walls and the insulating film, and excellent light-shielding properties upon heating. -12- 201100956 Copolymer [A] can be free-radically polymerized by the compounds (a 1) and (a2), and any of the compounds (a3) and (a4) in the presence of a polymerization initiator in a solvent. And manufacturing. The copolymer [A] preferably has a constituent unit derived from the compound (a1) in an amount of from 5 to 40% by mass based on the total of the constituent units derived from the compounds (a1), (a2), (a3) and (a4). /», especially good contains 1〇 to 30% by mass. By using the constituent unit derived from the compound (al) in such a ratio, the solubility with respect to the aqueous alkali solution can be controlled to an appropriate range in the developing step of the copolymer. The compound (al) is a radically polymerizable unsaturated citric acid and/or an unsaturated carboxylic anhydride. The compound (al) includes, for example, a monocarboxylic acid, a dicarboxylic acid, an anhydride of a dicarboxylic acid, a mono[(meth)acryloxyalkylene] ester of a polyvalent carboxylic acid, and a polymer having a carboxyl group and a hydroxyl group at both terminals. Mono (meth) acrylate, polycyclic compound having a carboxyl group, and anhydride thereof. Specific examples of the compound (al) include, for example, acrylic acid, methacrylic acid, crotonic acid, etc.; and dicarboxylic acids such as maleic acid, fumaric acid, citraconic acid, and mesaconic acid. And the acid anhydride of the dicarboxylic acid is, for example, an anhydride of the compound exemplified above for the dicarboxylic acid; and the mono ((meth) propylene oxyalkyl) ester of a polyvalent carboxylic acid, for example, succinic acid mono 2-(Methyl)acryloyloxyethyl]ester, mono-2-(methyl)propenyloxyethyl] decanoate, etc.; mono(meth)acrylate of a polymer having a carboxyl group and a hydroxyl group at both terminals For example, ω-carboxypolycaprolactone mono(meth)acrylate, etc.; -13- 201100956 Polycyclic compound having a carboxyl group and an anhydride thereof are, for example, 5-carboxybicyclo[2 2 ihept-2-ene, 5 , 6-dicarboxybicyclo[2.2.1]hept-2-ene, 5-carboxy-5-methylbicyclo[2.2.1]hept-2-pyrene, 5-nonyl-5-ethylbicyclo[2.2. 1] Geng-2-supplement, 5-resyl-6-methylbicyclo[2.2.1]hept-2-pyrene, 5-resin-6-ethylbicyclo[2.2.1]hept-2-ene, 5,6-Dicarboxybicyclo[2·2·1]hept-2-ene anhydride and the like. Among these compounds (a1), an anhydride of a monocarboxylic acid or a dicarboxylic acid is preferably used. Among them, acrylic acid, methacrylic acid, and maleic anhydride are particularly suitably used from the viewpoints of copolymerization reactivity with other compounds, solubility in an aqueous alkali solution, and ease of availability. These compounds (al) may be used singly or in combination. The copolymer [A] is preferably a constituent unit derived from the compound (a2) in an amount of from 1 to 50% by mass based on the total of the constituent units derived from the compounds (al), (a2), (a3) and (a4). It is particularly preferably contained in an amount of from 3 to 40% by mass. By using the constituent unit derived from the compound (a2) in an amount of 1% by mass or more, the radiation sensitivity of the radiation sensitive resin composition can be improved. On the other hand, by setting the amount of the constituent unit to 50% by mass or less, it is possible to prevent excessive solubility in the aqueous alkali solution in the developing step in the formation of the partition walls and the insulating film. The compound (a2) is a compound selected from the group consisting of the compound represented by the above formula (II) and the compound represented by the above formula (ΠΙ), which is a phenol skeleton-free unsaturated compound represented by the above formula (I). The unsaturated compound containing the phenol skeleton represented by the above formula (I) can be classified into the compounds represented by the following formulas (IV) to (VIII) according to the definitions of B and m. -14 - (17)201100956 R1

HN\ Ο (CHz)nHN\ Ο (CHz)n

(式(IV)中,n 係 1 至 3 之整數,R1、R2、R3、R4、R5、 及R6之定義同於式(1))。(In the formula (IV), n is an integer of 1 to 3, and R1, R2, R3, R4, R5, and R6 have the same meanings as in the formula (1)).

(V) (式(V)中,R1、R2、R3、R4、R5、及R6之定義同於上述 式⑴)。 〇(V) (In the formula (V), R1, R2, R3, R4, R5, and R6 have the same meanings as in the above formula (1)). 〇

(VI) 15- 201100956 (式(VI)中,ρ係1至3之整數。Rl、r2 及R6之定義則同於上述式(1)) °(VI) 15- 201100956 (In equation (VI), ρ is an integer from 1 to 3. The definitions of Rl, r2 and R6 are the same as above (1))

(W) Ο(W) Ο

(式(VII)中,R1、R2、R3、r4、R5、及R6之定義同於上 述式(I))。(In the formula (VII), R1, R2, R3, r4, R5, and R6 have the same meanings as in the above formula (I)).

(式(VIII)中,R1、R2、R3、R4、R5、及 R6 之定義同於 上述式(I))。 在該等之含酚骨架不飽和化合物中,以N-(3,5-二甲基 -4-羥苄基)(甲基)丙烯醯胺、N-(4-羥苯基)(甲基)丙烯醯胺、 (甲基)丙烯酸4-羥苄酯、(甲基)丙烯酸4-羥基苯酯、鄰羥 苯乙烯、間羥苯乙烯、對羥苯乙烯、α-甲基鄰羥苯乙烯、α-甲基間羥苯乙烯、α-甲基對羥苯乙烯,由於可提高感放射 線性樹脂組成物之放射線感度,加大顯影裕度(顯影時間之 -16- 201100956 容許範圍)’同時就可提高所得隔壁及絕緣膜之耐熱性這點 觀之可合適的使用。 上述式(II)所示之化合物係在雙酚型化合物一方之羥基 導入聚合性不飽和基的化合物。在上述式(11)所示之化合物 方面’有例如、4,4'-異亞丙二酚、4,4,-異亞丙雙(2-氯酚)、 4,4'-異亞丙雙(2,6-二溴酚)、4,4'-異亞丙雙(2,6-二氯酚)、 4,4·-異亞丙雙(2-甲酚)、4,4,-異亞丙雙(2,6-二甲酚)、4,4,-異亞丙雙(2 -三級丁酚)、4,4,-二級亞丁二酚、4,4,-s-亞丁雙 0 (2-甲酚)等之雙酚型化合物一方之羥基導入(甲基)丙烯醯 基的化合物。在其中,由可提高所形成[A]成分之化合物的 顯色性能之觀點觀之,特佳爲在4,4·-異亞丙二酚一方之羥 基導入(甲基)丙嫌醯基的化合物。 上述式(III)所示之化合物,係在萘二醇一方之羥基導入 聚合性不飽和基的化合物。萘二醇可爲1,2 -體、1,3 -體、1,4 -體、1,5 -體、2,3 -體及2,6 -體之任意的異構物,亦可爲該等 o 。上述式(III)所示化合物之具體例方面,有丨_丙烯 醯氧-4-萘酚、1-丙烯醯氧·5-萘酚、2-丙烯醯氧-6-萘酚、1-甲基丙烯醯氧-間萘酚、1-甲基丙烯醯氧-5-萘酚、2 -甲基丙 烯醯氧-6-萘酚等。該等化合物中,由所形成[Α]成分之化 合物之顯色性能提高與共聚性之觀點觀之,特佳爲丨_甲基 丙嫌醯氧-4·萘酣。 共聚物[Α]係根據化合物(al)、(a2)、〇3)及(a4)所衍生 構成單位之合計,具有自由基聚合性的含環氧基不飽和化 合物的化合物(a3)所衍生之構成單位,較佳爲含有至80 -17- 201100956 質量%、特佳爲含有20至70質量%。藉由設定該化合物(a3) 所衍生構成單位之量爲1 〇質量%以上’而可提高所得隔壁 及絕緣膜之耐熱性或表面硬度。一方面,藉由設定該構成 單位之量爲8 0質量%以下’而可高度保持感放射線性樹脂 組成物之保存穩定性。 化合物(a3)方面,有例如丙烯酸環氧丙酯、甲基丙烯酸 環氧丙酯,α -乙基丙烯酸環氧丙酯、α-正丙基丙烯酸環氧 丙酯、(X-正丁基丙烯酸環氧丙酯、丙烯酸_3,4_環氧丁醋、 ❹ 甲基丙烯酸-3,4-環氧丁酯、丙烯酸-6,7-環氧庚酯、甲基丙 烯酸-6,7-環氧庚酯、α-乙基丙烯酸-6,7-環氧庚酯、鄰乙烯 苄基環氧丙醚、間乙烯苄環氧丙醚、對乙烯苄環氧丙醚、 甲基丙烯酸3,4-環氧環己酯等。該等化合物(a3)中’以甲 基丙烯酸環氧丙酯、甲基丙烯酸-6,7-環氧庚酯、對乙烯苄 環氧丙醚、間乙烯苄環氧丙醚、對乙烯苄環氧丙醚、甲基 丙烯酸3,4-環氧環己酯等,因與其它化合物之共聚反應 Q 性、及可提高所得隔壁及絕緣膜之耐熱性或表面硬度之點 觀之,可適當使用。該等化合物(a3)可單獨使用或者組合 使用。 共聚物[A]係根據化合物(al)、(a2)、(a3)及(a4)所衍生 之構成單位之合計,使上述化合物(al)、(a2)及(a3)以外之 具有自由基聚合性的不飽和化合物的化合物(a4)所衍生之 構成單位,較佳爲含有5至70質量%、特佳爲含有5至50 質量%。藉由使該化合物(a4)所衍生之構成單位爲5質量% 以上,而可提高感放射線性樹脂組成物之保存穩定性。一 -18- 201100956 方面,藉由設定構成單位之量爲70質量%以下,而在隔壁 及絕緣膜之形成中的顯影步驟中,可促進組成物之對鹼水 溶液的溶解性。 化合物(a4)方面,有例如甲基丙烯酸鏈狀烷酯、丙烯酸 鏈狀烷酯、甲基丙烯酸環狀烷酯、具有羥基的甲基丙烯酸 酯、丙烯酸環狀烷酯、甲基丙烯酸芳酯、丙烯酸芳酯、不 飽和二羧酸二酯、雙環不飽和化合物、順丁烯二醯亞胺化 合物、不飽和芳香族化合物、共軛二烯、具有四氫呋喃骨 〇 架的不飽和化合物、具有呋喃骨架的不飽和化合物、具有 四氫哌喃骨架的不飽和化合物、具有哌喃骨架的不飽和化 合物、具有下述式(IX)所示骨架的不飽和化合物、及其他 不飽和化合物。(In the formula (VIII), R1, R2, R3, R4, R5, and R6 have the same meanings as in the above formula (I)). Among these phenolic skeleton-containing unsaturated compounds, N-(3,5-dimethyl-4-hydroxybenzyl)(meth)acrylamide, N-(4-hydroxyphenyl) (methyl) ) acrylamide, 4-hydroxybenzyl (meth)acrylate, 4-hydroxyphenyl (meth)acrylate, o-hydroxystyrene, m-hydroxystyrene, p-hydroxystyrene, α-methyl-hydroxystyrene , α-methyl-hydroxy-hydroxystyrene, α-methyl-p-hydroxystyrene, which can increase the radiation sensitivity of the radiation-sensitive resin composition, and increase the development margin (development time -16 - 201100956 allowable range) It can be suitably used to improve the heat resistance of the obtained partition walls and the insulating film. The compound represented by the above formula (II) is a compound in which a hydroxyl group of a bisphenol type compound is introduced into a polymerizable unsaturated group. In the case of the compound represented by the above formula (11), there are, for example, 4,4'-isopropylene glycol, 4,4,-isopropylidene (2-chlorophenol), 4,4'-isopropylidene Bis(2,6-dibromophenol), 4,4'-isopropylidene bis(2,6-dichlorophenol), 4,4·-isopropylidene bis(2-cresol), 4,4, - isopropylidene bis(2,6-xylenol), 4,4,- isopropylidene bis (2-tertiary butyl phenol), 4,4,-secondary butylene diol, 4,4,-s A compound in which a hydroxy group of a bisphenol type compound such as butylene 0 (2-cresol) is introduced into a (meth) acrylonitrile group. Among them, from the viewpoint of improving the color development property of the compound forming the [A] component, it is particularly preferable to introduce a (meth)-propyl sulfhydryl group into the hydroxyl group of the 4,4--isopropylidene phenol. Compound. The compound represented by the above formula (III) is a compound in which a polymerizable unsaturated group is introduced into a hydroxyl group of a naphthalenediol. The naphthalenediol may be any isomer of 1,2-body, 1,3-body, 1,4-body, 1,5-form, 2,3-body and 2,6-form, or may be These o. Specific examples of the compound represented by the above formula (III) include hydrazine propylene oxy-4-naphthol, 1-propene oxime 5-naphthol, 2-propene oxime-6-naphthol, 1-methyl Acryloxy-naphthol, 1-methylpropenyloxy-5-naphthol, 2-methylpropenyloxy-6-naphthol, and the like. Among these compounds, from the viewpoint of improvement in color development property and copolymerizability of the compound of the [Α] component formed, it is particularly preferable that 丨_methylpropane is 醯oxy-4·naphthoquinone. The copolymer [Α] is derived from a compound having the radically polymerizable epoxy group-containing unsaturated compound (a3) based on the total of the constituent units derived from the compounds (al), (a2), ruthenium 3) and (a4). The constituent unit preferably contains from 80 -17 to 201100956 mass%, particularly preferably from 20 to 70 mass%. By setting the amount of the constituent unit derived from the compound (a3) to be 1% by mass or more, the heat resistance or surface hardness of the obtained partition wall and the insulating film can be improved. On the other hand, by setting the amount of the constituent unit to 80% by mass or less, the storage stability of the radiation sensitive resin composition can be highly maintained. Examples of the compound (a3) include, for example, glycidyl acrylate, glycidyl methacrylate, α-ethyl acrylate propyl acrylate, α-n-propyl propylene acrylate, and (X-n-butyl acrylate). Glycidyl acrylate, acrylic acid _3,4_epoxybutyl vinegar, -3-3,4-epoxybutyl methacrylate, -6,7-epoxyheptyl acrylate, -6,7-cyclomethacrylate Oxyheptyl ester, α-ethyl acrylate-6,7-epoxyheptyl ester, o-vinylbenzyl epoxidized propyl ether, m-vinyl benzyl epoxidized ether, p-vinyl benzyl epoxidized ether, methacrylic acid 3, 4 - Epoxycyclohexyl ester, etc. In the compound (a3), 'glycidyl methacrylate, -6,7-epoxyheptyl methacrylate, p-vinyl benzyl epoxidized ether, m-vinyl benzyl ring Oxypropyl propyl ether, p-vinyl benzyl epoxidized propyl ether, 3,4-epoxycyclohexyl methacrylate, etc., due to copolymerization with other compounds, Q properties, and heat resistance or surface hardness of the resulting partition walls and insulating films The compound (a3) may be used singly or in combination. The copolymer [A] is a constituent list derived from the compounds (al), (a2), (a3) and (a4). In general, the constituent unit derived from the compound (a4) having a radical polymerizable unsaturated compound other than the above compounds (al), (a2) and (a3) is preferably contained in an amount of 5 to 70% by mass. In particular, the content of the compound (a4) is 5% by mass or more, and the storage stability of the radiation-sensitive resin composition can be improved. In the aspect of -18-201100956, By setting the amount of the constituent unit to 70% by mass or less, the solubility of the composition in the aqueous alkali solution can be promoted in the development step in the formation of the partition walls and the insulating film. For the compound (a4), for example, methacrylic acid Chain alkyl ester, acrylic chain alkyl ester, methacrylic acid alkyl acrylate, hydroxy group-containing methacrylate, acrylic acid cyclic alkyl ester, methacrylic acid aryl ester, aryl acrylate, unsaturated dicarboxylic acid diester , bicyclic unsaturated compound, maleimide compound, unsaturated aromatic compound, conjugated diene, unsaturated compound having tetrahydrofuran bone truss, unsaturated compound having furan skeleton , An unsaturated compound having a skeleton tetrahydropyran, pyran skeleton with an unsaturated compound, with (IX) an unsaturated compound having a skeleton, and other unsaturated compound of the following formula.

(式(IX)中,R7爲氫原子或甲基。q爲1以上之整數)。 該等具體例方面,作爲甲基丙烯酸鏈狀烷酯有例如甲基 丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基 丙烯酸二級丁酯、甲基丙烯酸三級丁酯、甲基丙烯酸2_乙 基己酯、甲基丙烯酸異癸酯、甲基丙烯酸正月桂酯、甲基 丙烁酸三癸酯、甲基丙烯酸正硬脂醯酯等; 丙嫌酸鏈狀烷酯,有例如丙烯酸甲酯、丙烯酸異丙酯等; -19- 201100956 甲基丙烯酸環狀烷酯,有例如甲基丙烯酸環己酯、甲基 丙烯酸2-甲基環己酯、甲基丙烯酸三環[5.2.1.02’6]癸烷- 8· 基酯、甲基丙烯酸三環[5.2.1.02’6]癸烷-8-基氧乙酯、甲基 丙烯酸異冰片酯等; 具有羥基的甲基丙烯酸酯,有例如甲基丙烯酸羥甲酯、 甲基丙烯酸2-羥乙酯、甲基丙烯酸3-羥丙酯、甲基丙烯酸 4 -羥丁酯、單甲基丙烯酸二乙二醇酯、甲基丙烯酸2,3 -二 羥丙酯、2-甲基丙烯醯氧乙基糖苷(glycoside)等; 〇 丙烯酸環狀烷酯有例如丙烯酸環己酯、丙烯酸2-甲基環 己酯、丙烯酸三環[5.2.1.02,6]癸烷-8酯、丙烯酸三環 [5.2.1.〇2’6]癸烷-8氧乙酯、丙烯酸異冰片酯等; 甲基丙烯酸芳酯,有例如甲基丙烯酸苯酯、甲基丙烯酸 苄酯等; 丙烯酸芳酯,有例如丙烯酸苯酯、丙烯酸苄酯等; 不飽和二羧酸二酯有例如順丁烯二酸二乙酯、反丁烯二 Q 酸二乙酯、伊康酸二乙酯等; 雙環不飽和化合物,有例如雙環[2·2·1]庚-2 -烯、5 -甲基 雙環[2.2.1]庚-2-烯、5-乙基雙環[2.2.1]庚·2-烯、5-甲氧雙 環[2.2.1]庚-2-烯、5-乙氧雙環[2.2.1]庚烯、5,6_二甲氧 雙環[2.2.1]庚-2-烯、5,6-二乙氧雙環[2.2.1]庚-2-烯、5-三 級丁氧羰雙環[2.2.1]庚-2-烯、5-環己氧羰雙環[2.入:^庚- 2-烯、5-苯氧羰雙環[2.2.1]庚-2-烯、5,6-二(三級丁氧羰)雙環 [2.2.1]庚-2-烯、5,6-二(環己氧羰)雙環[2.2.^庚-厂烯、 5-(2'-羥乙基)雙環[2.2.1]庚-2-烯、5,6-二羥雙環[2.2_1]庚 -20- 201100956 -2-烯、5,6—二(羥甲基)雙環[2.2.1]庚-2-烯、5,6-二(2,-羥 乙基)雙環[2.2.1]庚-2-烯、5-羥基-5-甲雙環[2.2.1]庚-2-烯、5-羥基-5-乙雙環[2.2.1]庚-2-烯、5-羥甲基-5-甲雙環 [2.2.1]庚-2-烯等; 順丁烯二醯亞胺化合物,有例如N-苯基順丁烯二醯亞 胺、N-環己基順丁烯二醯亞胺、N-苄基順丁烯二醯亞胺、 N-(4-羥苯基)順丁烯二醯亞胺、Ν-(4·羥苄基)順丁烯二醯亞 胺、Ν-琥珀醯亞胺基-3-順丁烯二醯亞胺苯甲酸酯、Ν-琥珀 醯亞胺基-4-順丁烯二醯亞胺丁酸酯、Ν-琥珀醯亞胺基-6-順丁烯二醯亞胺己酯、Ν-琥珀醯亞胺基-3-順丁烯二醯亞胺 丙酯、Ν-(間吖啶)順丁烯二醯亞胺等; 不飽和芳香族化合物,有例如苯乙烯、α-甲基苯乙烯、 間甲基苯乙烯、對甲基苯乙烯、乙烯甲苯、對甲氧苯乙烯 等; 共軛二烯,有例如1,3-丁二烯、異戊二烯、2,3-二甲基(In the formula (IX), R7 is a hydrogen atom or a methyl group. q is an integer of 1 or more). As such specific examples, as the linear alkyl methacrylate, there are, for example, methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, butyl methacrylate, and tertiary butyl methacrylate. , 2-ethylhexyl methacrylate, isodecyl methacrylate, n-lauryl methacrylate, tridecyl methacrylate, n-stearyl methacrylate, etc.; Ester, such as methyl acrylate, isopropyl acrylate, etc.; -19- 201100956 Cycloalkyl methacrylate, such as cyclohexyl methacrylate, 2-methylcyclohexyl methacrylate, methacrylic acid Ring [5.2.1.02'6]decane-8, dimethyl methacrylate [5.2.1.02'6]decane-8-yloxyethyl ester, isobornyl methacrylate, etc.; The acrylate is, for example, hydroxymethyl methacrylate, 2-hydroxyethyl methacrylate, 3-hydroxypropyl methacrylate, 4-hydroxybutyl methacrylate, diethylene glycol monomethacrylate, 2,3-dihydroxypropyl methacrylate, 2-methylpropenyloxyethylglycoside (glycoside), etc.; The cyclic alkyl esters are, for example, cyclohexyl acrylate, 2-methylcyclohexyl acrylate, tricyclo[5.2.1.02,6]decane-8 ester, tricyclo[5.2.1.〇2'6]癸Alkenyl-8 oxyethyl ester, isobornyl acrylate, etc.; aryl methacrylate, such as phenyl methacrylate, benzyl methacrylate, etc.; aryl acrylate, such as phenyl acrylate, benzyl acrylate, etc.; The saturated dicarboxylic acid diester is, for example, diethyl maleate, diethyl fumarate, diethyl itaconate or the like; a bicyclic unsaturated compound having, for example, a bicyclo [2·2·1] Heptane-2-ene, 5-methylbicyclo[2.2.1]hept-2-ene, 5-ethylbicyclo[2.2.1]hept-2-ene, 5-methoxybicyclo[2.2.1]heptane- 2-ene, 5-ethoxybicyclo[2.2.1]heptene, 5,6-dimethoxybicyclo[2.2.1]hept-2-ene, 5,6-diethoxybicyclo[2.2.1]g 2-ene, 5-tridebutoxycarbonylbicyclo[2.2.1]hept-2-ene, 5-cyclohexyloxycarbonylbicyclo[2.in:^hept-2-ene, 5-phenoxycarbonylbicyclo[ 2.2.1] Hept-2-ene, 5,6-di(tertiary butoxycarbonyl)bicyclo[2.2.1]hept-2-ene, 5,6-di(cyclohexyloxycarbonyl)bicyclo[2.2. Geng-plantene, 5-(2'-hydroxyethyl)bicyclo[2.2.1]heptan-2- , 5,6-dihydroxybicyclo[2.2_1]hept-20- 201100956-2-ene, 5,6-bis(hydroxymethyl)bicyclo[2.2.1]hept-2-ene, 5,6-di ( 2,-Hydroxyethyl)bicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-methylbicyclo[2.2.1]hept-2-ene, 5-hydroxy-5-ethylbicyclo[2.2.1 Hept-2-ene, 5-hydroxymethyl-5-methylbicyclo[2.2.1]hept-2-ene, etc.; maleimide compound, for example, N-phenylbutylene Amine, N-cyclohexylmethyleneimine, N-benzyl maleimide, N-(4-hydroxyphenyl) maleimide, Ν-(4.hydroxybenzyl) Butylenediamine, anthracene-succinimide-3-oxanediimide benzoate, anthracene-amber quinone imido-4-butylene diimine Acid ester, hydrazine-succinimide, hexamethylene phthalate, hydrazine-succinimide, benzyl hydrazide, hydrazine Maleic imide or the like; unsaturated aromatic compound such as styrene, α-methylstyrene, m-methylstyrene, p-methylstyrene, vinyltoluene, p-methoxystyrene, etc.; A conjugated diene having, for example, 1,3-butadiene, isoprene, 2,3- Methyl

具有四氫呋喃骨架的不飽和化合物,有例如(甲基)丙烯 酸四氫糠酯、2-甲基丙烯醯氧基-丙酸四氫糠酯、3-(甲基) 丙烯醯氧四氫呋喃-2-酮等; 含有呋喃骨架的不飽和化合物,有例如2-甲基-5-(3-呋 喃基)-1-戊烯-3-酮、(甲基)丙烯酸糠酯、1-呋喃-2-丁基-3-烯-2 -酮、1-呋喃-2 -丁基-3-甲氧基-3-烯-2 -酮、6-(2 -呋喃 基)-2 -甲基-1-己烯-3-酮、6·呋喃-2-基-己-1-烯-3-酮、丙烯 -21 - 201100956 酸-2-呋喃-2-基-1-甲基-乙醋、6-(2 -呋喃基)-6 -甲基-1-庚嫌 -3-酮等; 含有四氫哌喃骨架的不飽和化合物,有例如(四氫哌喃 -2 -基)甲基甲基丙烯酸酯、2,6 -二甲基- 8- (四氫哌喃-2基 氧)-辛-1-烯-3-酮、2 -甲基丙烯酸四氫哌喃-2酯、1-(四氫哌 喃-2-氧)-丁基-3-烯-2-酮等; 含有哌喃骨架的不飽和化合物有例如4-(1,4-二氧雜-5-側氧-6-庚烯基)-6-甲基-2-哌喃、4-(1,5-二氧雜-6-側氧基 -7-辛烯基)-6-甲基-2-哌喃等; 含有上述式(IX)所示骨架的不飽和化合物,有例如聚乙 二醇(n = 2至10)單(甲基)丙烯酸酯、聚丙二醇(n = 2至10) 單(甲基)丙烯酸酯等; 其他不飽和化合物,可各自例舉例如丙烯腈、甲基丙烯 腈、氯乙烯、氯化亞乙烯、丙烯醯胺、甲基丙烯醯胺、乙 酸乙烯酯。 該等化合物(a4)中宜爲使用甲基丙烯酸鏈狀烷酯、甲基 丙烯酸環狀烷酯、丙烯酸環狀烷酯、不飽和二竣酸二醋、 雙環不飽和化合物、順丁烯二醯亞胺化合物、不飽和芳香 族化合物、共軛二烯、含有四氫呋喃骨架的不飽和化合物、 含有四氫哌喃骨架的不飽和化合物、含有上述式(IX)所示 骨架的不飽和化合物。該等中,尤其是苯乙烯、甲基丙烧 酸三級丁酯、甲基丙烯酸三環[5.2.1 ·02,6]癸烷-8醋、對甲 氧苯乙烯、丙烯酸2-甲基環己酯、1,3-丁二烯、雙環[2.2·1] 庚-2-烯、(甲基)丙烯酸四氫糠酯、聚乙二醇(η = 2至1〇)單(甲 -22- 201100956 基)丙烯酸酯、3-(甲基)丙烯醯氧四氫呋喃-2-酮、1-(四氫哌 喃-2-氧)-丁基-3-烯-2-酮、(甲基)丙烯酸糠酯、N-環己基順 丁烯二醯亞胺,由與其它化合物之共聚反應性、及對鹼水 溶液之溶解性之點觀之爲佳。該等化合物(a4)可單獨使用 或者組合使用。 本發明所使用的共聚物[A]中,爲單體之化合物群之組 合之較佳具體例方面,有甲基丙烯酸/甲基丙烯酸三環 [5.2.1.02,6]癸烷-8-基酯/甲基丙烯酸環氧丙酯/丙烯酸2-甲 Ο 基環己酯/N-(3,5-二甲基-4-羥苄基)甲基丙烯醯胺共聚物、 甲基丙烯酸/甲基丙烯酸環氧丙酯/1-(四氫哌喃-2-氧)-丁基 -3-烯-2-酮/N-環己基順丁烯二醯亞胺/對甲氧苯乙烯 /N-(3, 5-二甲基-4-羥苄基)甲基丙烯醯胺共聚物、甲基丙烯 酸/甲基丙烯酸環氧丙酯/甲基丙烯酸三環[5.2.1.02’6]癸烷 -8酯/苯乙烯/N-苯基順丁烯二醯亞胺/N-(4-羥苯基)甲基丙 烯醯胺共聚物、甲基丙烯酸/甲基丙烯酸環氧丙酯/甲基丙 q 烯酸三環[5.2.1.02’6]癸烷-8-基酯/甲基丙烯酸正月桂酯/ 3-甲基丙烯醯氧四氫呋喃-2 -酮/N-(4 -羥苯基)甲基丙烯醯胺 共聚物、甲基丙烯酸/甲基丙烯酸環氧丙酯/甲基丙烯酸三 環[5.2.1.〇2’6]癸烷-8酯/對甲氧苯乙烯/甲基丙烯酸4_羥苄 酯共聚物、甲基丙烯酸/甲基丙烯酸三環[5.2.1.02,6]癸烷-8 酯/甲基丙烯酸環氧丙酯/苯乙烯/對乙烯苄環氧丙醚/甲基 丙烯酸四氫糠酯/甲基丙烯酸4-經苯酯共聚物、甲基丙烯酸 /甲基丙烯酸環氧丙酯/N-環己基順丁烯二醯亞胺/3_甲基丙 烯醯氧四氫呋喃-2-酮/甲基丙烯酸四氫糠酯/甲基丙烯酸4_ -23- 201100956 羥苯酯共聚物、甲基丙嫌酸/甲基丙嫌酸環氧丙酯/甲基丙 烯酸四氫糠酯/N-苯基順丁烯二醯亞胺/α-甲基-對經苯乙烯 共聚物、甲基丙烯酸/甲基丙烯酸環氧丙酯/甲基丙烯酸三 環[5.2.1.02,6]癸烷-8酯/Ν-環己基順丁烯二醯亞胺/甲基丙 烯酸正月桂酯/α-甲基-對羥苯乙烯共聚物、甲基丙烯酸/甲 基丙烯酸環氧丙酯/甲基丙烯酸四氫糠酯/Ν·環己基順丁烯 二醯亞胺/甲基丙烯酸正月桂酯/α_甲基-對羥苯乙烯共聚 物、甲基丙烯酸/甲基丙烯酸三環[5.2.1.02’6]癸烷-8酯/甲 Ο 基丙烯酸環氧丙酯/丙烯酸2-甲基環己酯/4,4'-異亞丙基-二 酚一方之羥基導入甲基丙烯醯基的化合物之共聚物、甲基 丙烯酸/甲基丙烯酸三環[5.2.1.02’6]癸烷-8酯/甲基丙烯酸 環氧丙酯/丙烯酸2-甲基環己酯/1-甲基丙烯醯氧-4-萘酚共 聚物。 共聚物[Α]之換算聚苯乙烯重量平均分子量(以下稱爲 「Mw」),較佳爲2xl03至lxlO5、更佳爲5χ103至5χ104。 q 藉由設定共聚物[Α]之Mw爲2x1 03以上,而可得感放射線樹 脂組成物之充分顯影裕度,同時可防止所形成塗膜之殘膜 率(圖形狀薄膜適當地殘存之比率)之降低,再者可良好保 持所得隔壁及絕緣膜之圖形形狀或耐熱性等。一方面,藉 由設定共聚物[A]之Mw爲ΙχΙΟ5以下,而可保持高度放射 線感度,獲得良好的圖形形狀。又’共聚物[A]之分子量分 布(以下稱爲「Mw/Mn」)較佳爲5.0以下、更佳爲3.0以下。 藉由設定共聚物[A]之Mw/Mn爲5.0以下,而可良好保持 所得隔壁及絕緣膜之圖形形狀。又,含有上述般之具有較 -24- 201100956 佳範圍之Mw及Mw/Mn的共聚物[A]的感放射線性樹脂組 成物,由於具有高度的顯影性,故在顯影步驟中’不致產 生顯影殘留,可容易地形成預定之圖形形狀。 用以製造共聚物[A]之聚合反應所使用之溶劑方面’有 例如醇類、醚類、乙二醇醚、乙二醇烷醚乙酸酯、二乙二 醇烷醚、丙二醇單烷醚、丙二醇單烷醚乙酸酯、丙二醇單 烷醚丙酸酯、芳香族烴類、酮類、其它酯類等。 該等溶劑方面,在醇類有例如甲醇、乙醇、节醇、2-苯 η ^ 乙醇、3-苯基-1-丙醇等; 醚類有例如四氫呋喃等; 乙二醇醚,有例如乙二醇單甲醚、乙二醇單乙醚等; 乙二醇烷醚乙酸酯,有例如甲基溶纖劑乙酸酯、乙基溶 纖劑乙酸酯、乙二醇單丁醚乙酸酯、乙二醇單乙酸乙酸醋 等; 二乙二醇烷醚,有例如二乙二醇單甲醚、二乙一醇單乙 Q 醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇乙甲醚 等; 丙二醇單烷醚有例如丙二醇單甲醚、丙二醇單乙醚、丙 二醇單丙醚、丙二醇單丁醚等; 丙二醇單烷醚乙酸酯,有例如丙二醇單甲醚乙酸酯、丙 二醇單乙醚乙酸酯 '丙二醇單丙醚乙酸酯、丙-醇單丁醚 乙酸酯等; -25 - 201100956 丙二醇單烷醚丙酸酯,有例如伸丙基單乙二醇甲醚丙酸 酯、丙二醇單乙醚丙酸酯、丙二醇單丙醚丙酸酯、丙二醇 單丁醚丙酸酯等; 芳香族烴類有例如甲苯、二甲苯等: 酮類,有例如甲乙酮、環己酮、4-羥基-4 -甲基-2-戊酮 等; 其它酯類可例舉乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸 丁酯、2-羥丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、羥乙酸甲酯、羥乙酸乙酯、羥乙酸丁酯、 乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、3-羥丙酸甲 酯、3-羥丙酸乙酯、3-羥丙酸丙酯、3-羥丙酸丁酯、2-羥基 -3 -甲基丁烷酸甲酯、甲氧乙酸甲酯、甲氧乙酸乙酯、甲氧 乙酸丙酯、甲氧乙酸丁酯、乙氧乙酸甲酯、乙氧乙酸乙酯、 乙氧乙酸丙酯、乙氧乙酸丁酯、丙氧乙酸甲酯、丙氧乙酸 乙酯、丙氧乙酸丙酯、丙氧乙酸丁酯、丁氧乙酸甲酯、丁 Q 氧乙酸乙酯、丁氧乙酸丙酯、丁氧乙酸丁酯、2_甲氧丙酸 甲酯、2-甲氧丙酸乙酯、2-甲氧丙酸丙酯、2-甲氧丙酸丁酯、 2-乙氧丙酸甲酯、2-乙氧丙酸乙酯、2-乙氧丙酸丙酯、2-乙氧丙酸丁酯、2-丁氧丙酸甲酯、2-丁氧丙酸乙酯、2-丁氧 丙酸丙酯、2-丁氧丙酸丁酯、3-甲氧丙酸甲酯、3-甲氧丙酸 乙酯、3-甲氧丙酸丙酯、3-甲氧丙酸丁酯、3-乙氧丙酸甲酯、 3 -乙氧丙酸乙酯、3 -乙氧丙酸丙酯、3 -乙氧丙酸丁酯、3-丙氧丙酸甲酯、3-丙氧丙酸乙酯、3-丙氧丙酸丙酯、3-丙氧 -26- 201100956 丙酸丁酯、3_ 丁氧丙酸甲酯、3-丁氧丙酸乙酯、3-丁氧丙酸 丙酯、3-丁氧丙酸丁酯等之酯類。 該等溶劑中,宜爲乙二醇烷醚乙酸酯、二乙二醇烷醚、 丙二醇單烷醚、丙二醇烷醚乙酸酯,特宜爲二乙二醇二甲 醚、二乙二醇乙甲醚、丙二醇單甲醚、丙二醇單甲醚乙酸 酯。 在用以製造共聚物[A]之聚合反應所使用之聚合引發劑 方面,一般可使用周知作爲自由基聚合引發劑之物。有例 〇 如2,2’-偶氮雙異丁腈、2,2·-偶氮雙-(2,4-二甲戊腈)、2,2·-偶氮雙-(4-甲氧基-2,4-二甲戊腈)等偶氮化合物;苯甲醯過 氧化物、月桂醯過氧化物、三級丁基過氧三甲基乙酸酯、 1,Γ-雙-(三級丁基適氧基)環己烷等有機過氧化物;及過氧 化氫。在使用過氧化物作爲自由基聚合引發劑之情形,使 過氧化物與還原劑共同使用作爲氧化還原型引發劑亦可。 在用以製造共聚物[Α]之聚合反應中,爲了調整分子 Q 量,可使用分子量調整劑。分子量調整劑之具體例方面, 有氯仿、四溴化碳等鹵化烴類;正己硫醇、正辛硫醇、正 十二硫醇、三級十二硫醇、硫代羥乙酸等硫醇類;二甲黃 原酸(xanthogen)硫化物、二異丙黃原酸二硫化物等黃原 酸類;葱品油嫌(terpinolene)、α -甲基苯乙燃二聚物等。 [B]成分 本發明之感放射線性樹脂組成物所使用之[B]成分係藉 由放射線之照射,而產生羧酸的1,2-醌二疊氮基化合物。 -27- 201100956 1,2-醌二疊氮基化合物可使用酚性化合物或醇性化合物(以 下稱爲「母核」)與1,2-萘醌二疊氮基磺酸鹵化物之縮合物。 上述母核方面,有例如三羥二苯酮、四氫羥二苯酮、五 羥二苯酮、六氫羥二苯酮、(聚羥苯基)鏈烷、其他之母核。 該等母核方面,在三羥二苯酮,有例如2,3,4 -三羥二苯 酮、2,4,6-三羥二苯酮等;四氫羥二苯酮,有例如2,2_,4,4,_ 四氫經一苯酮、2,3,4,3'-四氫經二苯酮、2,3,4,4,-四氫羥二 苯酮、2,3,4,2'-四氫羥基-4|-甲二苯酮、2,3,4,4_-四氫經基 ❸ -31-甲氧二苯酮等; 五羥二苯酮,有例如2,3,4,2',6’-五羥二苯酮等; 六氫羥二苯酮,有例如2,4,6,3_,4',5'-六氫趨二苯嗣、 3,4,5,3',4',5'-六氫羥二苯酮等; (聚羥苯基)鏈烷,有例如雙(2,4-二羥苯基)甲院雙(對 羥苯基)甲烷、參(對羥苯基)甲烷、1,1,1-參(對_苯基0 院、雙(2,3,4-三經苯基)甲院、2,2-雙(2,3,4_3趣苯基)丙 Q 烷、1,1,3-參(2,5-二甲基-4-羥苯基)-3-苯 〔4-〔 1-〔 4-羥苯基〕-1-甲乙基〕苯基〕亞乙基〕雙酣、 雙(2,5-二甲基-4-羥苯基)-2-羥苯甲烷、3,3,3,,3,_四甲基 -1,Γ-螺旋雙茚-5,6,7,5',6·,7'·己醇、2,2,4-h 甲基 _7 2, 4,. 三經黃院(fravane)等; 其他之母核,有例如2-甲基-2-(2,4-二羥苯基)_4_(4_經 苯基)-7-羥色滿(chroman) 、2-[雙{(5-異丙基·4_羥基_2 甲基)苯基}甲基]、卜羥苯基甲乙基}_4,6 二羥苯基)-1-甲乙基]-3-(1-(3-{1-(4-羥苯基乙 -28 - 201100956 基}-4,6-二羥苯基)-1-甲乙基)苯、4,6-雙{1-(4-羥苯基)-1-甲乙基}-1,3-二羥苯。 該等母核中’宜爲2,3,4,4,-四氫羥二苯酮、1,1,1-參(對 羥苯基)乙烷、4,4,-〔 1-〔4-〔 1-〔4 -羥苯基〕-1-甲乙基〕 苯基〕亞乙基〕雙酣。 又’ 1,2-萘醌二疊氮基磺酸鹵方面,宜爲12 —萘醌二疊 氮基磺酸氯。1,2-萘醌二疊氮基磺酸氯之具體例方面,可 例舉1,2-萘醌二疊氮基-4-磺酸氯及1,2-萘醌二疊氮基- 5- 〇 磺酸氯。其中特佳爲使用1,2·萘醌二疊氮基-5-磺酸氯。 在酚性化合物或醇性化合物(母核)與1,2-萘醌二疊氮基 磺酸鹵之縮合反應中,相對於酚性化合物或醇性化合物中 之OH基數,較佳爲使用30至85莫耳%、更佳爲使用相當 於50至70莫耳%的1,2-萘醌二疊氮基磺酸鹵。縮合反應可 以周知之方法實施。 又,在1,2-醌二疊氮基化合物方面,亦可適當使用上述 Q 例示的變更母核之酯鍵成爲醯胺鍵的1,2-萘醌二疊氮基磺 酸醯胺類,例如2,3,4-三羥二苯酮-1,2-萘醌二疊氮基-4-磺 酸醯胺等。 該等[B]成分可單獨或組合二種以上使用。相對於共聚 物[A] 100質量份,感放射線樹脂組成物中[B]成分之使用比 率較佳爲5至100質量份,更佳爲10至50質量份。藉由 設定感放射線樹脂組成物中[B]成分之比率爲5質量份以 上,而可使相對於爲顯影液之鹼水溶液的放射線之照射部 分與未照射部分之溶解度差變大,使圖形化容易,同時可 -29- 201100956 良好的保持所得隔壁及絕緣膜之耐熱性及耐溶劑性。一方 面’藉由設定[B]成分之比率爲100質量份以下,而可使放 射線照射部分中的對鹼水溶液之溶解度保持於充分高的等 級,而可容易地進行顯影。 [C]成分 [C]成分係感熱色素。在此所謂的「感熱色素」,係在 接受電子受體性化合物(例如酸等質子)的狀態下,藉由加 熱而具有發色之性質的化合物之意。感熱色素方面,特佳 〇 爲具有內酯、內醯胺、磺內酯(sultone)、螺旋哌喃、醋、 醯胺等之部分骨架,宜爲在與電子受體性化合物接觸時, 迅速地使該等部分骨架開環或者裂開之無色化合物。 此種感熱色素之例方面,有3,3-雙(4-二甲胺苯基)_6_二 甲胺基酞內酯(phthalide)(稱爲「結晶紫內酯」)、3,3-雙(4-二甲胺苯基)駄內酯、3-(4-二甲胺苯基)-3-(4-二乙胺基-2_ 甲苯基)-6-二甲胺基酞內酯、3-(4-二甲胺苯基)-3-(1,2-二甲 Q 吲哚-3-基)酞內酯、3-(4-二甲胺苯基)-3-(2-甲吲哚-3·基) 酞內酯、3,3-雙(1,2-二甲吲哚-3-基)-5-二甲胺基酞內酯、 3,3 -雙(1,2 -二甲吲哚-3-基)-6 -二甲胺基酞內酯、3,3 -雙(9-乙咔唑-3-基)-6-二甲胺基酞內酯、3,3-雙(2-苯吲哄_3_ 基)-6-二甲胺基酞內酯、3-(4-二甲胺苯基)-3-(1-甲基吡咯 -3 -基)-6-二甲胺基酞內酯; 3, 3-雙〔l,l-雙(4-二甲胺苯基)乙烯-2-基〕-4,5,6,7-四氯 酞內酯、3,3-雙〔1,1-雙(4-吡咯烷并苯基)乙烯-2-基〕 -4,5,6,7-四溴酞內酯、3,3-雙〔1-(4-二甲胺苯基)-1-(4-甲氧 -30- 201100956 苯基)乙烯-2-基〕-4,5,6,7 -四氯酞內酯、3,3 -雙〔1-(4-吡咯 烷并苯基)-1-(4-甲氧苯基)乙烯-2-基〕-4,5,6,7-四氯酞內 酯、3-〔 1,1-二(1-乙基-2-甲吲哚-3-基)乙烯-2-基〕-3-(4-二乙胺苯基)酞內酯、3-〔 1,1-二(1-乙基-2-甲基吲哚-3基) 乙烯-2-基〕-3-(4-N-乙基-N-苯胺苯基)酞內酯、3-(2-乙氧 基-4·二乙胺苯基)-3-(1-正辛基-2-甲吲哚-3-基)-酞內酯、 3,3-雙(1-正辛基-2-甲吲哚-3-基)-酞內酯、3-(2-甲基-4-二 乙胺苯基)-3-(1-正辛基-2-甲吲哚-3基)-酞內酯等酞內酯 0類; 4,4-雙-二甲胺基苯并丙醇(hydrin)苄醚、N-鹵苯基-無色 金黃胺(leuco-auramine)、N-2,4,5-二氯苯基無色金黃胺、 羅丹明-B-苯胺基內醯胺、羅丹明-(4-硝苯胺基)內醯胺;羅 丹明-B-(4-氯苯胺基)內醯胺、3,7-雙(二乙胺基)-10-苯甲醯 基啡嗪、苯甲醯基無色亞甲藍、4-硝基苯甲醯基亞甲藍; 3,6-二甲氧螢光黃母體(fluoran)、3-二甲胺基-7-甲氧螢 Q 光黃母體、3 -二乙胺基-6-甲氧營光黃母體、3 -二乙胺基- 7-甲氧螢光黃母體、3-二乙胺基-7-氯螢光黃母體、3-二乙胺 基_6_甲基-7-氯螢光黃母體、3-二乙胺基-6,7-二甲螢光黃母 體、3-N-環己基-N-正丁胺基-7-甲基螢光黃母體、3-二乙胺 基-7-二苄胺螢光黃母體、3-二乙胺基-7-辛胺螢光黃母體、 3-二乙胺基-7-二-正己胺螢光黃母體、3-二乙胺基-7-苯胺 螢光黃母體、3-二乙胺基- 7-(2氟苯胺基)螢光黃母體、3-二乙胺基-7-(2'·氯苯胺基)螢光黃母體、3-二乙胺基-7-(3·-氯苯胺基)螢光黃母體、3-二乙胺基- 7-(2 31-二氯苯胺基) -31- 201100956 螢光黃母體、3-二乙胺基- 7-(3'-三氟甲基苯胺基)螢光黃母 體、3-二-正丁胺基-7-(2'-氟苯胺基)螢光黃母體、3-二-正 丁胺基-7-(2'-氯苯胺基)螢光黃母體、3-N-異戊基-N-乙胺基 -7-(2'-氯苯胺基)螢光黃母體; 3-N-正己基-N-乙胺基-7-(2'-氯苯胺基)螢光黃母體、3-二乙胺基-6-氯-7-苯胺螢光黃母體、3-二-正丁胺基-6-氯- 7-苯胺螢光黃母體、3-二乙胺基-6-甲氧基-7-苯胺螢光黃母 體、3-二-正丁胺基-6-乙氧基-7-苯胺螢光黃母體、3-吡咯 ^ 烷并-6-甲基-7-苯胺螢光黃母體、3-N-六氫吡啶基-6-甲基 -7-苯胺螢光黃母體、3-嗎啉基-6-甲基-7-苯胺螢光黃母 體、3-二甲胺基-6-甲基-7-苯胺螢光黃母體、3-二乙胺基- 6-甲基-7-苯胺螢光黃母體、3-二-正丁胺基-6-甲基-7-苯胺螢 光黃母體、3-二-正戊胺基-6-甲基-7-苯胺螢光黃母體、3-N-乙基-N-甲胺基-6-甲基-7-苯胺螢光黃母體、3-N-正丙基-N-甲胺基-6-甲基-7-苯胺螢光黃母體、3-N-正丙基-N-乙胺基 q -6-甲基-7-苯胺螢光黃母體、3-N-正丁基-N-甲胺基-6-甲基 -7-苯胺螢光黃母體、3-N-正丁基-N-乙胺基-6-甲基-7_苯胺 螢光黃母體、3-N-異丁基-N-甲胺基-6-甲基-7-苯胺螢光黃 母體、3-N-異丁基-N-乙胺基-6-甲基-7-苯胺螢光黃母體、 3-N-異戊基-N-乙胺基-6-甲基-7-苯胺螢光黃母體、3-N-正 己基-N-甲胺基-6-甲基-7-苯胺螢光黃母體、3-N-環己基-N-乙胺基-6-甲基-7-苯胺螢光黃母體、3-N-環己基-N-正丙胺 基_6_甲基-7-苯胺螢光黃母體、3-N-環己基-N-正丁胺基-6-甲基-7-苯胺螢光黃母體、3-N-環己基-N-正己胺基-6-甲基 -32- 201100956 -7-苯胺螢光黃母體、3-N-環己基-N-正辛胺基-6-甲基-7-苯 胺螢光黃母體; 3-Ν-(2·-甲氧乙基)-N-甲胺基-6-甲基-7-苯胺螢光黃母 體、3-Ν_(2'-甲氧乙基)-Ν-乙胺基-6-甲基-7_苯胺螢光黃母 體、3_Ν·(2'-甲氧乙基)-Ν-異丁胺基-6-甲基-7-苯胺螢光黃 母體、3-Ν-(2’-乙氧乙基)-Ν-甲胺基-6-甲基-7-苯胺基螢光 黃母體、3-Ν-(2'-乙氧乙基)-Ν-乙胺基-6-甲基-7-苯胺基螢 光黃母體、3-Ν-(3'-甲氧丙基)-Ν-甲胺基-6-甲基-7_苯胺螢 ^ 光黃母體、3-Ν-(3'-甲氧丙基)-Ν-乙胺基-6-甲基-7-苯胺螢 光黃母體、3-Ν-(3’-乙氧丙基)-Ν-甲胺基-6-甲基-7-苯胺螢 光黃母體、3-Ν-(3’-乙氧丙基)-Ν-乙胺基-6-甲基-7-苯胺螢 光黃母體、3-Ν-(2’-四氫糠基)-Ν-乙胺基-6-甲基-7-苯胺螢 光黃母體、3-Ν-(4'-甲苯基)-Ν-乙胺基-6-甲基-7-苯胺螢光 黃母體、3-二乙胺基-6-乙基-7-苯胺螢光黃母體、3-二乙胺 基_6_甲基甲苯胺基)螢光黃母體、3-二乙胺基-6-甲基 q -7-(2',6'-二甲苯胺基)螢光黃母體、3-二-正丁胺基-6-甲基 -7-(2',6'-二甲苯胺基)螢光黃母體、3-二-正丁胺基-7-(2',6’-二甲苯胺基)螢光黃母體、2,2-雙〔4’-(3-Ν-環己基-Ν-甲胺 基-6-甲基螢光黃母體)-7基胺苯基〕丙烷、3-〔4’-(4-苯胺 苯基)胺苯基〕胺基-6-甲基-7-氯螢光黃母體、3 -〔4'-(二甲 胺苯基)〕胺基-5,7-二甲螢光黃母體等之螢光黃母體類; 3-(2-甲基-4-二乙胺苯基)-3-(1-乙基-2-甲基吲哚-3-基)-4-氮雜酞內酯、3-(2-正丙氧羰胺基-4-二-正丙胺苯 基)-3-(卜乙基-2-甲吲哚-3-基)-4-氮雜酞內酯、3-(2-甲胺基 -33- 201100956 -4-二-正丙胺苯基)-3-(1-乙基-2-甲吲哚-3-基)-4-氮雜酞內 酯、3-(2-甲基-4-二正己胺苯基)-3-(1-正辛基-2-甲吲哚_3_ 基)-4,7-二氮雜酞內酯、3,3-雙(2-乙氧基-4-二乙胺苯基)_4_ 氮雜酞內酯、3,3 -雙(1-正辛基-2-甲基吲哚-3 -基)-4 -氮雜酞 內酯、3-(2 -乙氧基-4-二乙胺苯基)-3-(1-乙基-2-甲吲哚_3-基)-4-氮雜酞內酯、3-(2-乙氧基-4-二乙胺苯基)-3-(1-辛基 -2-甲吲哚-3-基)-4或7-氮雜酞內酯、3-(2-乙氧基-4-二乙胺 苯基)-3-(1-乙基-2-甲吲哚-3-基)-4或7·氮雜酞內酯、3-(2-^ 己氧基-4-二乙胺苯基)-3-(1-乙基-2-甲吲哚-3-基)-4或7_ 氮雜酞內酯、3-(2-乙氧基-4-二乙胺苯基)-3-(1-乙基·2-苯吲 哚-3 -基)-4或 7-氮雜酞內酯、3-(2-丁氧基-4-二乙胺苯 基)-3-(1-乙基-2-苯吲哚-3-基)-4或7-氮雜酞內酯3-甲基_ 螺旋-二萘并哌喃、3-乙基-螺旋-二萘并哌喃、3-苯基-螺旋 -二萘并哌喃、3-苄基-螺旋-二萘并哌喃、3-甲基-萘并-(3-甲氧苯并)螺旋哌喃、3-丙基-螺旋-二苯并哌喃-3,6-雙(二甲 q 胺基)弗-9-螺旋-3’-(6’·二甲胺基)酞內酯、3,6-雙(二乙胺基) 莽-9-螺旋-3^(6'-二甲胺基)酞內酯等之酞內酯類; 其他有2·-苯胺基- 6'-(Ν-乙基-Ν-異戊基)胺基- 3'-甲基螺 旋[異苯并呋喃-1(3Η),9'-(9Η)]卩山唱-3-嗣、21-苯胺基- 6’-(Ν-乙基-Ν-(4-甲苯基))胺基-3’-甲螺旋[異苯并呋喃 -1(3H),9’-(9H)D山唱]-3-酮、3’-Ν,Ν-二苄胺基- 6’-Ν,Ν-二乙胺 基螺旋[異苯并呋喃-1(3Η),9’-(9Η)卩山喔]-3-酮、2'-(Ν-甲基 -Ν-苯基)胺基- 6’-(Ν-乙基-Ν-(4 -甲苯基))胺基螺旋[異苯并 呋喃-1(3Η),9、(9Η)卩山暱]-3-酮等。 -34- 201100956 該等感熱色素之市售品方面,有 ETAC、RED 5 00、 RED520、CVL、S-205、BLACK305、BLACK400、BLACK100、 BLACK500、Η-70(Π、GREEN300、NIR BLACK78、BLUE220、 H-3035、BLUE203' ATP,Η-1046、Η-2114(山田化學工業(股) 公司製)、ORANGE-DCF、Vermilion-DCF、PINK-DCF ' RED-DCF、BLMB、CVL > GREEN-DCF' T Η - 1 0 7 (Η o d o g a y a 化學(股)公司製)等。該等市售品中,以ETAC、S-205、 BLACK3 05、BLACK400,BLACK100、BLACK500、H-700 1、 Ο GREEN300、NIR BLACK78、H-3035、ATP、H-1046、H-2114、 GREEN-DCF,由於所形成膜之可視光吸收率良好,故佳。 該等感熱色素係藉由隔壁及絕緣膜所謀求的可視光光 譜,可組合二種以上之成分使用。相對於共聚物[A] 100質 量份,感放射線樹脂組成物中[C]成分之使用比率較佳爲 0.1至30質量份、更佳爲0.5至15質量份。藉由設定[C] 成分之比率爲0.1質量份以上,而可有效率地吸收所期望 Q 之光線,並顯現遮光性。一方面,藉由設定[C]成分之比率 爲30質量份以下,而可良好的保持感放射線樹脂組成物之 放射線感度、及所得隔壁及絕緣膜之耐溶劑性或耐熱性。 其他任意成分 本發明之感放射線性樹脂組成物係含有上述[A]、[B]及 [C]成分作爲必須成分,不過其他可因應需要含有:[D]感 熱性酸生成化合物、[E]具有至少1個烯性不飽和雙鍵的聚 合性化合物、[F]共聚物[A]以外之環氧樹脂、[G]界面活性 劑、[H]密接助劑。 -35- 201100956 [D]成分之感熱性酸生成化合物係用以提高所得隔壁及 絕緣膜之耐熱性或表面硬度所使用。感熱性酸生成化合物 方面,可例舉銃鹽、苯并噻唑鎩鹽、銨鹽、鱗鹽等之鎗鹽。 上述毓鹽之例方面,有烷毓鹽、苄銃鹽、二苄锍鹽、取 代苄基銃鹽等。 該等锍鹽方面, 烷銃鹽有例如4-乙醯氧苯基二甲毓六氟銻酸鹽、4-乙醯 氧苯基二甲銃六氟砷酸鹽、二甲-4-(苄氧羰氧)苯基毓六氟 Ο 銻酸鹽、二甲-4-(苯甲醯氧)苯基锍六氟銻酸鹽、二甲-4-(苯 甲醯氧)苯基锍六氟砷酸鹽、二甲·3_氯_4·乙醯氧苯基锍六 氟銻酸鹽等; 苄毓鹽有例如苄基-4-羥苯甲毓六氟銻酸鹽 '苄基-4-羥 苯甲锍六氟磷酸鹽、4-乙醯氧苯苄甲銃六氟銻酸鹽、苄基 -4-甲氧苯甲鏑六氟銻酸鹽、苄基-2-甲基-4-羥苯甲锍六氟 銻酸鹽、苄基-3-氯-4-羥苯甲毓六氟砷酸鹽、4 -甲氧苄基- 4-q 羥苯甲鏡六氟磷酸鹽等; 二苄锍鹽,有例如二苄基-4-羥苯锍六氟銻酸鹽、二苄基 -4-羥苯毓六氟磷酸鹽、4-乙醯氧苯二苄锍六氟銻酸鹽、二 苄基-4-甲氧苯锍六氟銻酸鹽、二苄基-3-氯-4-羥苯锍六氟 砷酸鹽、二苄基-3-甲基-4-羥基-5-三級丁苯锍六氟銻酸 鹽、苄基-4-甲氧苄基-4-羥苯锍六氟磷酸鹽等; 取代苄锍鹽可例舉例如對氯苄基-4-羥苯甲基锍六氟銻 酸鹽、對硝苄基-4-羥苯甲銃六氟銻酸鹽、對氯苄基-4-羥苯 甲鏡六氟磷酸鹽、對硝苄基-3-甲基-4-羥苯甲锍六氟銻酸 -36- 201100956 鹽、3,5-二氯苄基-4-羥苯甲锍六氟銻酸鹽、鄰氯苄基-3-氯 -4 -羥苯甲毓六氟銻酸鹽等。 上述苯并噻唑鑰鹽之例方面, 可例舉3-苄苯并噻唑鑰六氟銻酸鹽、3-苄苯并噻唑鎗六 氟磷酸鹽、3-苄苯并噻唑鑰四氟硼酸酯、3-(對甲氧苄基) 苯并噻唑鐵六氟銻酸鹽、3-苄基-2-甲基硫代苯并噻唑鎗六 氟銻酸鹽、3-苄基-5-氯苯并噻唑鎗六氟銻酸鹽等。 該等感熱性酸生成化合物中,宜爲使用毓鹽及苯并噻唑 鑰鹽。其中尤佳爲4-乙醯氧苯二甲銃六氟砷酸鹽、苄基-4-羥苯甲鏑六氟銻酸鹽、4-乙醯氧苯苄甲鏑六氟銻酸鹽、二 苄基-4-羥苯鏑六氟銻酸鹽、4-乙醯氧苯苄锍六氟銻酸鹽、 3 -苄苯并噻唑鎗六氟銻酸鹽。 該等感熱性酸生成化合物之市售品方面,有 Sun aid SI-L85、Sunaid SI-L110、Sunaid SI-L145、Sunaid SI-L150、 Sunaid SI-L160(三新化學工業(股)公司製)等。 相對於共聚物[A] 100質量份,感放射線樹脂組成物中[D] 成分之使用比率較佳爲0.1至20質量份’更佳爲1至10 質量份。藉由設定[D]成分之混合量爲0.1至20質量份, 而可在形成具有充分強度的硬化膜之同時,可防止塗膜形 成步驟中析出物之發生。 [E]成分之具有至少1個烯性不飽和雙鍵的聚合性化合 物方面,可適當使用例如單官能(甲基)丙烯酸酯、2官能(甲 基)丙烯酸酯、3官能以上之(甲基)丙烯酸酯。 -37- 201100956 單官能(甲基)丙烯酸酯方面,有例如(甲基)丙烯酸2-羥 乙酯、(甲基)丙烯酸卡必醇酯、(甲基)丙烯酸異冰片酯、(甲 基)丙烯酸3-甲氧丁酯、2-鄰苯二酸(甲基)丙烯醯氧乙基- 2-羥丙酯等。該等單官能(甲基)丙烯酸酯之市售品之例,可 例舉 Aronics M-101、A’ronics M-lll、Aronics M-114(以上 爲東亞合成(股)公司製)、KAYARAD TC-110S、KAYARAD TC-120S(以上爲日本化藥(股)公司製)、Viscoat 158、 Viscoat 2311(以上爲大阪有機化學工業(股)公司製)等。 2官能(甲基)丙烯酸酯方面,有例如二(甲基)丙烯酸乙二 醇酯、二(甲基)丙烯酸1,6-己二醇酯、二(甲基)丙烯酸1,9-壬二醇酯、聚丙二醇二(甲基)丙烯酸酯、二(甲基)丙烯酸四 乙二醇酯、二丙烯酸雙苯氧乙醇莽酯、丙烯酸雙苯氧乙醇 弗酯等。該等2官能(甲基)丙烯酸酯之市售品方面,可例 舉例如 Aronics M-210、Aronics M-240、Aronics M-6200(以 上爲東亞合成(股)公司製)、KAYARADHDDA、同HX-220、 同 R-604(以上爲日本化藥(股)公司製)、Viscoat 260、 Viscoat 312,Viscoat 335HP(以上爲大阪有機化學工業(股) 公司製)等。 3官能以上(甲基)丙烯酸酯方面,有例如三(甲基)丙烯酸 三羥甲丙酯、三(甲基)丙烯酸新戊四醇酯、參((甲基)丙烯 醯氧乙基)磷酸酯、四(甲基)丙烯酸新戊四醇酯 '五(甲基) 丙烯酸二新戊四醇酯、六(甲基)丙烯酸二新戊四醇酯等。 該等3官能以上之(甲基)丙烯酸酯之市售品方面,有例如 Aronics M-3 09 ' Aronics M-400 ' Aronics M-405 ' Aronics -38- 201100956 M-450 、 Aronics M-7 1 00 、 Aronics M-803 0 、 Aronics M-8060(以上爲東亞合成(股)公司製)、KAYARAD TMPTA、 KAYARAD DPH A 、 KAYARAD DPCA-20 、 KAYARAD DPCA-30、KAYARAD DPCA-60、KAYARAD DPCA-120(以 上爲日本化藥(股)公司製)、Viscoat 295、Viscoat 300、 Viscoat 3 60、Viscoat GPT、Viscoat 3PA、Viscoat 400(以 上爲大阪有機化學工業(股)公司製)等。 該等甲基(丙烯酸酯)類中,由所形成之隔壁及絕緣膜之 Ο 耐熱性及表面硬度之改善之觀點觀之,宜爲使用3官能以 上之(甲基)丙烯酸酯。其中特佳爲三(甲基)丙烯酸三羥甲丙 酯、四(甲基)丙烯酸新戊四醇酯、二六(甲基)丙烯酸新戊四 醇酯。該等單官能、2官能或3官能以上之(甲基)丙烯酸酯 可單獨使用或者組合使用。 相對於共聚物[A] 100質量份,感放射線樹脂組成物中[E] 成分之使用比率較佳爲1至50質量份,更佳爲3至30質 八 量份。 ❹ 藉由設定[E]成分之混合量爲1至50質量份,而可提高 所得隔壁及絕緣膜之耐熱性及表面硬度等,同時可抑制對 基板上之塗膜形成步驟中膜皸裂之發生。 爲[F]成分之共聚物[A]以外之環氧樹脂,只要對感放射 線樹脂組成物所含各成分之互溶(compatible)性無不良影 響,則無特別限定。此種環氧樹脂之例,較佳爲雙酚A型 環氧樹脂、酚系酚醛清漆型環氧樹脂、甲酚系酚醛清漆型 環氧樹脂、環狀脂肪族環氧樹脂、環氧丙酯型環氧樹脂、 -39- 201100956 環氧丙胺型環氧樹脂、雜環式環氧樹脂、使甲基丙烯酸環 氧丙酯(共)聚合的樹脂等。該等中,特佳爲雙酚A型環氧 樹脂、甲酚系酚醛清漆型環氧樹脂、環氧丙酯型環氧樹脂 等。 相對於共聚物[A] 100質量份,感放射線樹脂組成物中[F] 成分之使用比率較佳爲30質量份以下。藉由以此種比率使 用[F]成分,可進一步提高自感放射線性樹脂組成物所得隔 壁及絕緣膜之耐熱性及表面硬度等,同時,在基板上形成 感放射線性樹脂組成物之塗膜時,可獲得高度的膜厚均一 性。此外,雖共聚物[A]亦可稱爲「環氧樹脂」,不過就具 有鹼可溶性之觀點觀之,則與[F]成分不同。 [F]成分爲鹼不溶性。 在感放射線性樹脂組成物,爲了進一步提高塗膜形成時 之塗佈性’ [G]成分可使用界面活性劑。可適當使用之界面 活性劑方面,可例舉氟系界面活性劑、聚矽氧系界面活性 劑及非離子系界面活性劑。 氟系界面活性劑之例方面,有1 , 1,2,2 -四氟辛基(1,1 , 2,2 -四氟丙基)醚、1,1,2,2-四氟辛己醚、八乙二醇二(i,i,2,2-四氟丁基)醚、六乙二醇(1,1,2,2,3,3 -六氟戊基)醚、八丙二 醇二(1,1,2,2-四氟丁基)醚、六丙二醇二(1,1,2,2,3,3-六氟戊 基)醚等之氟醚類;全氟十二基磺酸鈉; 1,1,2,2,8,8,9,9,10,10-十氟十二烷、l,l,2,2,3,3-六氟癸烷等 之氟鏈烷類;氟烷苯磺酸鈉類;氟烷氧乙烯醚類;碘化氟 烷銨類;氟烷聚氧乙烯醚類; -40- 201100956 全氟烷聚氧乙醇類;全氟烷烷氧化物類;氟系烷酯類等。 該等氟系界面活性劑之市售品方面’有 BM- 1 000、 BM-1100(以上爲 BM Chemie 公司製)、megafac F142D、 megafac F 1 72、megafac F 1 7 3、megafac F 1 8 3、megafac F 1 7 8 ' megafac F191、megafac F471(以上爲大日本油墨化 學工業(股)公司製)、FluoradFC-170C、FC-171、FC-430、 FC-431(以上爲住友 3M(股)公司製)、SurflonS-112、SUrflon S-113、Surflon S-131、Surflon S-141、Surflon S-145、Surflon O S-382、Surflon SC-101、Surflon SC-102、Surflon SC-103、 Surflon SC-104、Surflon SC-105、Surflon SC-106(旭玻璃 公司製)、EFTOP EF301、EFTOP 303、EFTOP 352(新秋田 化成(股)公司製)等。 聚矽氧系界面活性劑之具體例方面,以市售之商品名則 有 DC3PA、DC7PA' FS- 1 265、SF-8428、SH11PA、SH21PA、 SH28PA、SH29PA、SH30PA、SH-190、SH-193、SZ-6032(以 q 上爲 Toray . Dow Corning ·聚矽氧(股)公司製)、 TSF-4440 、 TSF-4300 、 TSF-4445 、 TSF-4446 、 TSF-4460 、 TSF-4452(以上爲GE東芝聚矽氧(股)公司製)等。 非離子系界面活性劑方面,有例如聚氧乙烯月桂醚、聚 氧乙烯硬脂醯醚、聚氧乙烯油醚等之聚氧乙烯烷醚類;聚 氧乙烯辛苯醚、聚氧乙烯壬苯醚等之聚氧乙烯芳醚類;聚 氧乙嫌二月桂酸酯、聚氧乙烯二硬脂酸酯等之聚氧乙烯二 烷酯類;(甲基)丙烯酸系共聚物類等。非離子系界面活性 劑之代表性市售品方面,有polyflovvNo.57、95(共榮社化 -41 - 201100956 學(股)製)。該等界面活性劑可單獨使用或組合二種以上使 用。 在感放射線樹脂組成物中,相對於共聚物[A] 1 00質量 份,[G]成分之界面活性劑較佳爲〇.〇1至5質量份、更佳 爲0.0 5至3質量份。藉由設定界面活性劑之混合量於0.0 1 至5質量份,而可抑制在基板上形成塗膜時之膜皸裂之發 生。 本發明之感放射線性樹脂組成物中,爲了提高與基板之 接著性,則可使用爲[H]成分的密接助劑。此種密接助劑方 面,宜爲使用官能性矽烷偶合劑。官能性矽烷偶合劑之例 方面,可例舉羧基、甲基丙烯醯基、異氰酸酯基、環氧基 等之具有反應性取代基的矽烷偶合劑等。官能性矽烷偶合 劑之具體例方面,可例舉苯甲酸三甲氧矽烷酯、γ-甲基丙 烯醯氧丙基三甲氧矽烷 '乙烯三乙醯氧矽烷、乙烯三甲氧 矽院、γ-異氰酸酯丙基三乙氧砂院、γ-環氧丙氧丙基三甲 氧矽烷、β-(3,4-環氧環己基)乙基三甲氧矽烷等。感放射線 樹脂組成物中,相對於共聚物[Α] 100質量份,此種密接助 劑較佳爲0.1至30質量份、更佳爲1至25質量份。藉由 設定〔Η〕成分之密接助劑之混合量爲〇·1至20質量份’ 而可在顯影步驟中不致產生顯影殘留’相對於基板顯現充 分密接性,可容易地形成圖形。 感放射線性樹脂組成物 本發明之感放射線性樹脂組成物係藉由使上述[A]、[Β] 及[C]成分、以及任意成分([D]至[Η]成分)均一地混合,而 -42- 201100956 調製。通常,感放射線性樹脂組成物’較佳爲溶解於適當 的溶劑中,在溶液狀態下保存,並使用。例如,在溶劑中 藉由使[A]、[B]及[C]成分、以及任意成分以預定之比率混 合,而可調製溶液狀態之感放射線性樹脂組成物。 感放射線性樹脂組成物之調製所使用之溶劑方面,只要 可使上述[A]、[B]及[C]成分,以及任意成分([D]至[H]成分) 之各成分均一地溶解,且不與各成分反應之物,則並無特 別限定。此種溶劑方面,可例舉與例示作爲用以製造共聚 Ο 物[A]可使用的溶劑相同之物。 此種溶劑中,由各成分之溶解性、與各成分之非反應 性、塗膜形成之容易性等觀點觀之,宜爲使用醇類、乙二 醇醚、乙二醇烷醚乙酸酯、酯類及二乙二醇烷醚。 該等溶劑中,特佳爲使用苄醇、2 -苯乙醇、3 -苯基-1-丙醇、乙二醇單丁醚乙酸酯、二乙二醇單乙醚、二乙二醇 二乙醚、二乙二醇乙甲醚、二乙二醇二甲醚、丙二醇單甲 Q 酸、丙二醇單甲醚乙酸酯、2-或3-甲氧丙酸甲酯、2-或3· 乙氧丙酸乙酯。 再者’爲了提高所形成塗膜之膜厚的面內均一性’亦可 與該溶劑一起倂用高沸點溶劑。可倂用的高沸點溶劑方 面,有例如N-甲基甲醯胺、N,N-二甲甲醯胺、N-甲基N-甲酿苯胺、N-甲基乙醯胺、N,N-二甲乙醯胺、N-甲基吡咯 n定酮、二甲亞颯、苄乙醚、二己醚、丙酮基丙酮、異佛爾 酮、己酸、辛酸、1-辛醇、丨_壬醇、乙酸苄酯、苯甲酸乙 酯、草酸二乙酯、順丁烯二酸二乙酯、γ-丁內酯、碳酸乙 -43- 201100956 烯酯、碳酸伸丙酯、苯基溶纖劑乙酸酯等。該等高沸點溶 劑中,宜爲N-甲基吡咯啶酮、γ-丁內酯、N,N-二甲乙醯胺。 作爲感放射線性樹脂組成物之溶劑,在倂用高沸點溶劑 之情形,相對於全溶劑量,其使用量較佳爲1至40質量%、 更佳爲3至30質量%。藉由設定爲1至40質量%,而可使 塗膜形成時之塗膜性進一步良好,再者可抑制放射線感度 及殘膜率之降低。 在調製感放射線性樹脂組成物成爲溶液狀態之情形,溶 Ο 液中占有溶劑以外之成分(亦即,共聚物[A]、[B]及[C]成 分,以及其他任意成分之合計量)之比率,雖可因應使用目 的或所期望之膜厚等而任意地設定,不過較佳爲5至50質 量%、更佳爲1 〇至4 0質量%、更佳爲1 5至3 5質量%。如 此一來,所調製的感放射線性樹脂組成物之溶液,係使用 孔徑0.2 μηι左右之微孔過濾器等經過濾後,而供使用。 隔壁及絕緣膜之形成 0 接著,關於使用上述之感放射線性樹脂組成物,形成本 發明之隔壁及絕緣膜之方法詳細敘述如後。該方法係以下 列記載順序,包含以下步驟。 (1 )使本發明之感放射線性樹脂組成物之塗膜形成於基 板上的步驟; (2) 對在步驟(1)形成的塗膜之至少一部分照射放射線的 步驟; (3) 將在步驟(2)照射放射線之塗膜予以顯影的步驟;及 (4) 將在步驟(3)顯影的塗膜予以加熱的步驟。 -44 - 201100956 (1) 使感放射線性樹脂組成物之塗膜形成於基板上的步驟 在上述(1)之步驟中,係將本發明之感放射線樹脂組成物 之溶液塗布於基板表面,較佳爲藉由進行預烘烤,而除去 溶劑,並形成感放射線性樹脂組成物之塗膜。在可使用之 基板種類方面,可舉例如玻璃基板、矽晶圓及在該等表面 形成各種金屬的基板》 組成物溶液之塗佈方法方面,並無特別限定,可採用例 如噴灑法、輥塗佈法、旋轉塗佈法(旋轉塗佈法)、縫模塗 佈法、棒塗佈法、噴墨法等適宜方法。該等塗佈方法中, 特佳爲旋轉塗佈法、縫模塗佈法。預烘烤之條件方面,雖 因各成分種類、使用比率等而異,不過可設定於例如在60 至110 °C,30秒至15分鐘左右。在所形成之塗膜之膜厚方 面,預烘烤後之値可設爲3至6μιη。 (2) 在塗膜之至少一部分照射放射線之步驟 在上述(2)之步驟中,經由在所形成之塗膜具有預定之圖 形的光罩,以照射放射線。此時所使用的放射線方面,有 例如紫外線、遠紫外線、X線、帶電粒子線等。 上述紫外線方面,可舉例如g線(波長43 6nm)、i線(波 長3 65 nm)等。遠紫外線方面,有例如KrF準分子雷射等。 X線方面,有例如同步加速器放射線等。帶電粒子線方面, 有例如電子束等。該等放射線中,宜爲紫外線,在紫外線 之中,特佳爲含有g線及/或i線的放射線。在曝光量方面, 宜爲 50 至 l,500J/m2。 (3) 顯影步驟 -45 - 201100956 (3 )在顯影步驟中’相對於以上述(2)步驟照射放射線之 塗膜’進行顯影’除去放射線之照射部分,而可形成所期 望之圖形。 顯影處理所使用之顯影液方面,可使用例如氫氧化鈉、 氫氧化鉀、碳酸鈉、矽酸鈉、甲基矽酸鈉、氨、乙胺、正 丙胺、二乙胺、二乙胺乙醇、二-正丙胺、三乙胺、甲基二 乙胺、二甲乙醇胺、三乙醇胺、氫氧化四甲銨、氫氧化四 乙銨、吡咯、哌啶、1,8-二氮雜二環〔5,4,0〕-7-十一烯、 〇 ^ 1,5-二氮雜二環〔4,3,0〕-5-壬烷等之鹼(鹼性化合物)之水 溶液。又,將在上述鹼之水溶液添加適當量甲醇、乙醇等 之水溶性有機溶劑或界面活性劑水溶液;或將少量含有溶 解有感放射線樹脂組成物之各種有機溶劑之鹼水溶液,可 作爲顯影液使用。再者,顯影方法方面,可利用例如盛液 法、浸漬法、搖動浸漬法、沖洗法等適宜之方法。顯影時 間因感放射線樹脂組成物之組成而異,而例如可設定爲3 0 至1 2 0秒。 此外,周知的感放射線性樹脂組成物,顯影時間自最適 値超過20至2 5秒左右時,由於在形成的圖形產生剝離, 故必須嚴密地控制顯影時間。對此,本發明之感放射線性 樹脂組成物,由於顯影裕度高,故即使自最適顯影時間之 超過時間有3 0秒以上,亦可形成良好的圖形,在製品生產 率上之優點非常大。 (4)加熱步驟 -46- 201100956 (4)在加熱步驟中,在上述(3)顯影步驟後,相對於經圖 形化的薄膜’較佳爲進行流水洗淨所致漂洗處理,接著, 藉由較佳爲高壓汞燈等所致放射線予以全面照射(後曝 光),而可進行殘存於薄膜中的1,2 -醌二疊氮基化合物之分 解處理。接著’使用熱板、烤爐等加熱裝置,藉由將該薄 膜進行加熱處理(事後烘烤處理),而可進行薄膜之硬化處 理。上述之後曝光中的曝光量,較佳爲2,000至5,000〗/m2 左右。又,在該硬化處理中的燒成溫度爲例如120至 2 5 0°C。加熱時間因加熱機器之種類而異,不過例如在熱板 上進行加熱處理之情形可設爲5至30分鐘,在烤爐中進行 加熱處理之情形則設爲3 0至9 0分鐘。此時,亦可使用進 行2次以上加熱步驟的步驟烘焙法等。如此一來,可在基 板表面上形成爲目的之隔壁或者對應於絕緣膜的圖形狀薄 膜。 以上述方式所形成之隔壁或者絕緣膜,如後述之實施例 所可明瞭,在全部之放射線感度、顯影裕度(顯影性之尺 度)、耐溶劑性、耐熱性、全透光率(遮光性之尺度)及介電 常數(介電特性之尺度)之點,顯示極優異特性。 實施例 茲例示合成例、實施例如下,進一步具體說明本發明, 不過本發明並非限於以下之實施例。 自以下各合成例及比較合成例所得共聚物之重量平均 分子量(Mw)及數平均分子量(Μη)可依照下述規格之凝膠 滲透層析術(GPC)來測定。 -47- 201100956 裝置:GPC-101(昭和電工(股)公司製) 柱:結合 GPC-KF-801、GPC-KF-802、GPC-KF-803 及 GPC-KF-8〇4(昭和電工(股)公司製)之物 移動相:含磷酸0.5質量%之四氫呋喃 共聚物之合成例 [合成例1 ] 在具備冷卻管、攪拌機之燒瓶,裝入2,2,-偶氮雙-(2,4-二甲戊腈)7質量份、二乙二醇乙甲醚200質量份。接著裝 〇 入甲基丙烯酸14質量份、甲基丙烯酸三環[5.2.1.02’6]癸烷 -8酯16質量份、丙烯酸2 -甲環己酯20質量份、甲基丙烯 酸環氧丙酯40質量份、N-(3, 5 -二甲-4 -羥苄基)甲基丙烯醯 胺1 〇質量份及α-甲基苯乙烯二聚物3質量份,以氮取代後 開始緩緩地攪拌。使溶液溫度上升至70 °C,保持此溫度4 小時,獲得含有共聚物[A-1]的聚合物溶液。該共聚物[A-1] 之換算聚苯乙烯重量平均分子量(Mw)爲8,000,分子量分 Q 布(Mw/Mn)爲2.3。又,在此所得聚合物溶液之固形物濃度 爲3 4.4質量。/〇。 [合成例2] 在具備冷卻管、攪拌機之燒瓶,裝入2,2'-偶氮雙-(2,4-二甲戊腈)9質量份、二乙二醇乙甲醚22 0質量份。接著裝 入甲基丙烯酸12質量份、對甲氧苯乙烯12質量份、1-(四 氫哌喃-2-氧)-丁基-3-烯-2-酮15質量份、甲基丙烯酸環氧 丙酯40質量份、N-環己順丁烯二醯亞胺1〇質量份、Ν-(3,5· 二甲基-4-羥苄基)甲基丙烯醯胺1〇質量份、及α-甲基苯乙 -48- 201100956 烯二聚物3質量份,以氮取代後,開始緩緩地攪拌。使溶 液之溫度上升至70°C,保持此溫度4小時,獲得含有共聚 物[A-2]的聚合物溶液。共聚物[A-2]之換算聚苯乙烯重量平 均分子量(Mw)爲8,100、分子量分布(Mw/Mn)爲2.4。又, 在此所得聚合物溶液之固形物濃度爲3 2.7質量%。 [合成例3] 在具備冷卻管、攪拌機之燒瓶,裝入2,2'-偶氮雙-(2,4-二甲戊腈)7質量份、二乙二醇乙甲醚200質量份。接著裝 入甲基丙烯酸14質量份、甲基丙烯酸三環[5.2.1.02’6]癸烷 -8酯16質量份、對甲氧苯乙烯10質量份、甲基丙烯酸環 氧丙酯40質量份、甲基丙烯酸間羥苄酯20質量份及α-甲 基苯乙烯二聚物3質量份,以氮取代後,開始緩緩地攪拌。 使溶液之溫度上升至7 ,保持此溫度4小時,獲得含有 共聚物[A-3]之聚合物溶液。共聚物[A-3]之換算聚苯乙烯重 量平均分子量(Mw)爲8,5 00,分子量分布(Mw/Mn)爲2.3。 又,在此所得聚合物溶液之固形物濃度爲3 4.1質量%。 [合成例4] 在具備冷卻管、攪拌機之燒瓶,裝入2,2'-偶氮雙-(2,4-二甲戊腈質量份及二乙二醇乙甲醚220質量份。接著裝 入甲基丙烯酸11質量份、甲基丙烯酸四氫糠酯12質量份、 甲基丙烯酸環氧丙酯40質量份、N-環己基順丁烯二醯亞胺 15質量份、甲基丙烯酸正月桂酯10質量份、α-甲基-對羥 苯乙烯10質量份、及α-甲基苯乙烯二聚物3質量份,以氮 取代後開始緩緩地攪拌。使溶液溫度上升至70°C,使該溫 -49- 201100956 度保持5小時,獲得含有共聚物[A-4]之聚合物溶液。共聚 物[A-4]之換算聚苯乙稀重量平均分子量(Mw)爲8,000,分 子量分布(Mw/Mn)爲2.3。又’在此所得合體溶液之固形物 濃度爲3 1 .9質量%。 [合成例5] 在具備冷卻管、攪拌機之燒瓶,裝入2,2'-偶氮雙-(2,4-二甲戊腈)7質量份、二乙二醇乙甲醚200質量份。接著裝 入甲基丙烯酸14質量份、甲基丙烯酸三環[5.2.1.02’6]癸烷 ® -8酯16質量份、丙烯酸2-甲基環己酯20質量份、甲基丙 烯酸環氧丙酯40質量份、4,4'-異亞丙二酚一方之羥基導入 甲基丙烯醯基的化合物10質量份及a-甲基苯乙烯二聚物3 質量份,以氮取代後開始緩緩地攪拌。使溶液之溫度上升 至7 0°C,保持此溫度4小時,獲得含有共聚物[A-5]的聚合 物溶液。該共聚物[A-5]之換算聚苯乙烯重量平均分子量 (Mw)爲7,000、分子量分布(Mw/Mn)爲2.5。又,在此所得 Q 聚合物溶液之固形物濃度爲3 4.8質量%。 [合成例6] 在具備冷卻管、攪拌機之燒瓶,裝入2,2'_偶氮雙-(2,4-二甲戊腈)7質量份、二乙二醇乙甲醚200質量份。接著裝 入甲基丙烯酸14質量份、甲基丙烯酸三環[5.2.1.02’6]癸烷 -8酯16質量份、丙烯酸2 -甲環己酯20質量份、甲基丙烯 酸環氧丙酯40質量份、1_甲基丙烯醯氧-4-萘酚1〇質量份 及α-甲基苯乙烯二聚物3質量份,以氮取代後開始緩緩地 攪拌。使溶液之溫度上升至7(TC,保持此溫度4小時’獲 -50- 201100956 得含有共聚物[々-6]的聚合物溶液。該共聚物[人-6]之換算聚 苯乙烯重量平均分子量(Mw)爲8,000、分子量分布(Mw/Mn) 爲2.5。又,在此所得聚合物溶液之固形物濃度爲34.6質 量%。 [比較合成例1 ] 在具備冷卻管、攪拌機之燒瓶,裝入2,2'-偶氮雙-(2,4-二甲戊腈)8質量份、二乙二醇乙甲醚220質量份。接著裝 入甲基丙烯酸12質量份、對甲氧苯乙烯12質量份、1-(四 〇 氫哌喃-2-氧)-丁基-3-烯-2-酮15質量份、甲基丙烯酸環氧 丙酯40質量份、N-環己基順丁烯二醯亞胺10質量份、甲 基丙烯酸三環[5.2.1_02,6]癸烷-8酯10質量份、及a-甲基苯 乙烯二聚物3質量份,以氮取代後開始緩緩地攪拌。使溶 液之溫度上升至70°C ’保持此溫度4小時,獲得含共聚物 [a-1]的聚合物溶液。共聚物[a-1]之換算聚苯乙烯重量平均 分子量(Mw)爲8,900’分子量分布(Mw/Mn)爲2.5。又’在 Q 此所得聚合物溶液之固形物濃度爲32.9質量%。 <感放射線性樹脂組成物之調製> [實施例1] 將[A]成分係含有合成例1之共聚物[A-1]的溶液’相當 於共聚物 1 〇〇質量份(固形物)之量;及[B]成分係 4,4'-[1-[4-[1-[4-羥苯基]-1-甲基乙基]苯基]亞乙基]雙酚 (1.0莫耳)與1,2-萘醌二疊氮基-5-磺酸氯(2.0莫耳)之縮合 物(B-l)30質量份;及[C]成分係2,-苯胺基-6'-(N-乙基-N-異戊基)胺基-3,-甲基螺旋[異苯并呋喃 -51- 201100956 -1(3H),9'-(9H)卩山噃]-3 -酮(C-l)5質量份予以混合’在溶解 於二乙二醇乙甲醚,以使固形物濃度成爲30質量%後,以 口徑0 · 2 μιη之膜過濾器過濾,來調製感放射線性樹脂組成 物之溶液(S-1)。 [實施例2至5、7至1 0、比較例1至4 ] 除了 [A]、[Β]及[C]成分係使用如表1記載之種類、量之 外其它則同於實施例1,來調製感放射線性樹脂組成物之 溶液(S-2)至(S-5)、 (S-7)至(S-10)、及(s-1)至(s-4)。 D [實施例6] 除了溶解於二乙二醇乙甲醚/丙二醇單甲酸乙酸酯 = 6/4(莫耳比),以使固形物濃度成爲20質量%以外,其他 則與實施例1相同,來調製感放射線性樹脂組成物之溶液 (S-6 卜 表1中,成分之簡稱表示下列化合物。 (Β-1): 4,4·-[1-[4-[1·[4-羥苯基]-1-甲基乙基]苯基]亞乙 Q 基]雙酚(1.0莫耳)與1,2-萘醌二疊氮基-5-磺酸氯(2.0莫耳) 之縮合物 (Β·2): 1,1,卜參(對羥苯基)乙烷(1.〇莫耳)與丨,2-萘醌二 疊氮基磺酸氯(2.〇莫耳)之縮合物 (C-l): 21-苯胺基- 6,-(Ν_乙基-Ν_異戊基)胺基- 3,-甲基螺 旋[異苯并呋喃- l(3H),9'-(9H)t!lIl嗤]-3-酮(山田化學工業(股) 公司製’商品名S205) -52- 201100956 * (C-2)2|-苯胺基- 6'-(N-乙基-N-(4 -甲苯基))胺基- 3’ -甲基 螺旋[異苯并呋喃-1(3H),9,-(9H)卩山哩]-3-酮(山田化學^業 (股)公司製,商品名ETAC) (C-3)3'-N,N-二苄胺基- 6,-N,N-二乙胺螺旋[異苯幷味喃 -l(3H),9’-(9H)l]山Π星]-3-酮(Hodogaya化學(股)公司製’商品 名 GREEN DCF) ((:-4)2,-(1^-甲基-:^苯基)胺基-6,-(^[-乙基-:^-(4-甲苯基)) 胺基螺旋[異苯并呋喃-1(3H),9,-(9H)卩山嘎]-3-酮(山田彳匕_ U 工業(股)公司製,商品名ATP) (G) 界面活性劑:SH28PA(Toray. Dow Corning·聚砍氧 (股)公司製) (H) 密接助劑:β-(3,4-環氧環己基)乙基三甲氧矽烷 (Χ-1)低分子顯色劑:BONJET BLACK0052(東方化學工 業(股)公司製) (X-2)低分子顯色劑:4-苯酚An unsaturated compound having a tetrahydrofuran skeleton, such as tetrahydrofurfuryl (meth) acrylate, 2-methylpropenyloxy-tetrahydrofurfuryl propionate, 3-(methyl) propylene oxime tetrahydrofuran-2-one And an unsaturated compound containing a furan skeleton, for example, 2-methyl-5-(3-furyl)-1-penten-3-one, decyl (meth)acrylate, 1-furan-2-butane 3--3-en-2-one, 1-furan-2-butyl-3-methoxy-3-ene-2-one, 6-(2-furyl)-2-methyl-1-hexyl En-3-one, 6·furan-2-yl-hex-1-en-3-one, propylene-21 - 201100956 acid-2-furan-2-yl-1-methyl-ethyl vinegar, 6-( 2-furyl)-6-methyl-1-heptan-3-one or the like; an unsaturated compound containing a tetrahydropyran skeleton, for example, (tetrahydropyran-2-yl)methyl methacrylate , 2,6-dimethyl-8-(tetrahydropyran-2-yloxy)-oct-1-en-3-one, 2-tetrahydropyran-2-yl methacrylate, 1-(tetrahydrogen) Piper-2-oxo)-butyl-3-en-2-one and the like; an unsaturated compound containing a melane skeleton is, for example, 4-(1,4-dioxa-5-sideoxy-6-heptene 6-methyl-2-pyran, 4-(1,5-dioxa-6-o-oxy-7-octyl (6)-methyl-2-pyrane or the like; an unsaturated compound containing a skeleton represented by the above formula (IX), for example, polyethylene glycol (n = 2 to 10) mono(meth)acrylate, poly Propylene glycol (n = 2 to 10) mono (meth) acrylate or the like; other unsaturated compounds, each of which may, for example, be acrylonitrile, methacrylonitrile, vinyl chloride, vinylidene chloride, acrylamide, methacryl Indoleamine, vinyl acetate. Preferably, in the compound (a4), a linear alkyl methacrylate, a cyclic alkyl methacrylate, a cyclic alkyl acrylate, an unsaturated diacetic acid diacetate, a bicyclic unsaturated compound, and maleic acid are used. An imine compound, an unsaturated aromatic compound, a conjugated diene, an unsaturated compound containing a tetrahydrofuran skeleton, an unsaturated compound containing a tetrahydropyran skeleton, or an unsaturated compound containing a skeleton represented by the above formula (IX). Among these, especially styrene, butyl methacrylate, ternary methacrylate [5. 2. 1 · 02, 6] decane-8 vinegar, p-methoxystyrene, 2-methylcyclohexyl acrylate, 1,3-butadiene, bicyclo [2. 2·1] Hept-2-ene, tetrahydrofurfuryl (meth)acrylate, polyethylene glycol (η = 2 to 1 〇) mono (A-22-201100956) acrylate, 3-(methyl) Propylene oxime tetrahydrofuran-2-one, 1-(tetrahydropentan-2-oxo)-butyl-3-en-2-one, decyl (meth) acrylate, N-cyclohexyl maleic acid The imine is preferably selected from the viewpoints of copolymerization reactivity with other compounds and solubility in an aqueous alkali solution. These compounds (a4) may be used singly or in combination. In the copolymer [A] used in the present invention, a preferred specific example of the combination of the compound groups of the monomers is a methacrylic acid/methacrylic acid tricyclic ring [5. 2. 1. 02,6]decane-8-yl ester/glycidyl methacrylate/2-methylindole cyclohexyl acrylate/N-(3,5-dimethyl-4-hydroxybenzyl)methacryl Indoleamine copolymer, methacrylic acid/glycidyl methacrylate/1-(tetrahydropyran-2-oxy)-butyl-3-en-2-one/N-cyclohexyl-n-butenylene Imine/p-methoxystyrene/N-(3,5-dimethyl-4-hydroxybenzyl)methacrylamide copolymer, methacrylic acid/glycidyl methacrylate/methacrylic acid Ring [5. 2. 1. 02'6] decane-8 ester / styrene / N-phenyl maleimide / N-(4-hydroxyphenyl) methacrylamide copolymer, methacrylic acid / methacrylic acid ring Oxypropyl propyl ester / methyl propyl q enoate tricyclo [5. 2. 1. 02'6]decane-8-yl ester/n-lauryl methacrylate/3-methylpropenyloxytetrahydrofuran-2-one/N-(4-hydroxyphenyl)methacrylamide copolymer, A Acrylic acid/glycidyl methacrylate/trimethyl methacrylate [5. 2. 1. 〇 2'6] decane-8 ester / p-methoxy styrene / 4-hydroxybenzyl methacrylate copolymer, methacrylic acid / methacrylic acid tricyclo [5. 2. 1. 02,6]decane-8 ester/glycidyl methacrylate/styrene/p-vinyl benzyl epoxidized propyl ether/tetrahydrofurfuryl methacrylate/4- phenyl acrylate copolymer, methyl Acrylic acid / glycidyl methacrylate / N-cyclohexyl maleimide / 3 - methacryloyloxytetrahydrofuran-2-one / tetrahydrofurfuryl methacrylate / methacrylic acid 4_ -23- 201100956 Hydroxyphenyl ester copolymer, methyl propylene acid/methyl propylene acid propyl acrylate / tetrahydrofurfuryl methacrylate / N-phenyl maleimide / α-methyl-pair Styrene copolymer, methacrylic acid / glycidyl methacrylate / trimethacrylate [5. 2. 1. 02,6]decane-8 ester / fluorene-cyclohexylm-butyleneimide / n-lauryl methacrylate / α-methyl-p-hydroxystyrene copolymer, methacrylic acid / methacrylic acid epoxy Propyl ester / tetrahydrofurfuryl methacrylate / Ν · cyclohexyl maleimide / n-lauryl methacrylate / α-methyl-p-hydroxystyrene copolymer, methacrylic acid / methacrylic acid Ring [5. 2. 1. 02'6] decane-8 ester / formazan propylene acrylate / 2-methylcyclohexyl acrylate / 4,4 '-isopropylidene-diphenol hydroxy group introduced into methacryl oxime Copolymer of compound, methacrylic acid / methacrylic acid tricyclo [5. 2. 1. 02'6] decane-8 ester / methacrylic acid propylene acrylate / 2-methylcyclohexyl acrylate / 1-methyl propylene oxime - 4-naphthol copolymer. The converted polystyrene weight average molecular weight (hereinafter referred to as "Mw") of the copolymer [Α] is preferably 2 x 10 3 to 1 x 10 5 , more preferably 5 χ 103 to 5 χ 104. q By setting the Mw of the copolymer [Α] to 2x1 03 or more, a sufficient development margin of the radiation sensitive resin composition can be obtained, and at the same time, the residual film ratio of the formed coating film can be prevented (the ratio of the pattern shape film remaining properly) In addition, the pattern shape, heat resistance, and the like of the obtained partition walls and the insulating film can be favorably maintained. On the other hand, by setting the Mw of the copolymer [A] to be ΙχΙΟ5 or less, it is possible to maintain a high degree of radiation sensitivity and obtain a good pattern shape. Further, the molecular weight distribution of the copolymer [A] (hereinafter referred to as "Mw/Mn") is preferably 5. 0 or less, more preferably 3. 0 or less. By setting the Mw/Mn of the copolymer [A] to 5. Below 0, the pattern shape of the obtained partition walls and the insulating film can be favorably maintained. Further, the radiation-sensitive resin composition containing the above-mentioned copolymer [A] having a Mw and Mw/Mn ratio which is better than the range of -24 to 201100956, since it has high developability, does not cause development in the developing step. Residual, a predetermined pattern shape can be easily formed. The solvent used in the polymerization for producing the copolymer [A] is, for example, an alcohol, an ether, a glycol ether, an ethylene glycol alkyl ether acetate, a diethylene glycol alkyl ether, a propylene glycol monoalkyl ether. , propylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ether propionate, aromatic hydrocarbons, ketones, other esters, and the like. Examples of the solvent include methanol, ethanol, hexanol, 2-phenyl η ^ ethanol, 3-phenyl-1-propanol, and the like; ethers such as tetrahydrofuran; and glycol ethers such as B. Glycol monomethyl ether, ethylene glycol monoethyl ether, etc.; ethylene glycol alkyl ether acetate, such as methyl cellosolve acetate, ethyl cellosolve acetate, ethylene glycol monobutyl ether acetate Ester, ethylene glycol monoacetic acid acetate, etc.; diethylene glycol alkyl ether, such as diethylene glycol monomethyl ether, diethyl ether monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether , propylene glycol monomethyl ether, etc.; propylene glycol monoalkyl ether such as propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, propylene glycol monobutyl ether, etc.; propylene glycol monoalkyl ether acetate, such as propylene glycol monomethyl ether Acetate, propylene glycol monoethyl ether acetate 'propylene glycol monopropyl ether acetate, propanol monobutyl ether acetate, etc.; -25 - 201100956 propylene glycol monoalkyl ether propionate, such as exopropyl monoethyl Alcohol methyl ether propionate, propylene glycol monoethyl ether propionate, propylene glycol monopropyl ether propionate, propylene glycol monobutyl ether propionate, etc.; Examples of the hydrocarbons include toluene, xylene, and the like: ketones such as methyl ethyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, and the like; and other esters may, for example, methyl acetate or ethyl acetate. , propyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, ethyl 2-hydroxy-2-methylpropionate, methyl glycolate, glycolic acid Ethyl ester, butyl glycolate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, ethyl 3-hydroxypropionate, propyl 3-hydroxypropionate, 3- Butyl hydroxypropionate, methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, Ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, methyl propyl oxyacetate, ethyl propyl oxyacetate, propyl propoxyacetate, butyl propyl acetate, methyl butoxyacetate, butyl Q Ethyl oxyacetate, butyl butoxyacetate, butyl butoxyacetate, methyl 2-methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, 2-methoxypropionic acid Butyl ester, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate , propyl 2-ethoxypropionate, butyl 2-ethoxypropionate, methyl 2-butoxypropionate, ethyl 2-butoxypropionate, propyl 2-butoxypropionate, 2-butoxy Butyl propionate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, propyl 3-methoxypropionate, butyl 3-methoxypropionate, methyl 3-ethoxypropionate, Ethyl 3-ethoxypropionate, propyl 3-ethoxypropionate, butyl 3-ethoxypropionate, methyl 3-propoxypropionate, ethyl 3-propoxypropionate, 3-propoxypropane Propyl acrylate, 3-propoxy-26- 201100956 butyl propionate, methyl 3-butoxypropionate, ethyl 3-butoxypropionate, propyl 3-butoxypropionate, 3-butoxypropionic acid Esters such as esters. Among these solvents, it is preferably ethylene glycol alkyl ether acetate, diethylene glycol alkyl ether, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, particularly diethylene glycol dimethyl ether, diethylene glycol Ethyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate. As the polymerization initiator to be used in the polymerization for producing the copolymer [A], a conventionally known radical polymerization initiator can be generally used. Examples are 2,2'-azobisisobutyronitrile, 2,2·-azobis-(2,4-dimethylvaleronitrile), 2,2·-azobis-(4-methoxy Azo compounds such as benzyl-2,4-dimethylvaleronitrile; benzamidine peroxide, lauryl peroxide, tertiary butyl peroxytrimethyl acetate, 1, Γ-bis-(three An organic peroxide such as butyloxy)cyclohexane; and hydrogen peroxide. In the case where a peroxide is used as the radical polymerization initiator, it is also possible to use a peroxide together with a reducing agent as a redox type initiator. In the polymerization reaction for producing a copolymer [Α], a molecular weight modifier may be used in order to adjust the amount of molecular Q. Specific examples of the molecular weight modifier include halogenated hydrocarbons such as chloroform and carbon tetrabromide; mercaptans such as n-hexyl mercaptan, n-octyl mercaptan, n-dodecyl mercaptan, tridecyl thiol, and thioglycolic acid; ; xanthogen sulfide (xanthogen) sulfide, diisopropylxanthate disulfide and other xanthogens; terpinolene, α-methyl benzene ethane dimer. [B] component The component [B] used in the radiation sensitive resin composition of the present invention is a 1,2-quinonediazide compound which generates a carboxylic acid by irradiation with radiation. -27- 201100956 1,2-醌 diazide compound condensate of phenolic compound or alcoholic compound (hereinafter referred to as "mother core") and 1,2-naphthoquinonediazidesulfonic acid halide . Examples of the above-mentioned parent core include, for example, trihydroxybenzophenone, tetrahydrohydroxybenzophenone, pentahydroxybenzophenone, hexahydrohydroxybenzophenone, (polyhydroxyphenyl)alkane, and other mother cores. In terms of the core, in the hydroxybenzophenone, there are, for example, 2,3,4-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone, etc.; tetrahydrohydroxybenzophenone, for example, 2 , 2_, 4, 4, _ tetrahydroperbenzophenone, 2,3,4,3'-tetrahydroperbenzophenone, 2,3,4,4,-tetrahydro hydroxybenzophenone, 2,3 , 4,2'-tetrahydrohydroxy-4|-methylbenzophenone, 2,3,4,4--tetrahydro-pyridyl-31-methoxybenzophenone, etc.; pentahydroxybenzophenone, for example 2 , 3,4,2',6'-pentahydroxybenzophenone, etc.; hexahydrodiphenyl ketone, such as 2,4,6,3_,4',5'-hexahydrodiphenyl hydrazine, 3, 4,5,3',4',5'-hexahydrohydroxybenzophenone, etc.; (polyhydroxyphenyl)alkane, for example, bis(2,4-dihydroxyphenyl)methanthine (p-hydroxybenzene) Methane, ginseng (p-hydroxyphenyl) methane, 1,1,1-parameter (p-phenylene 0, bis (2,3,4-triphenyl)), 2,2-dual ( 2,3,4_3 phenyl)propane Q, 1,1,3-parade (2,5-dimethyl-4-hydroxyphenyl)-3-benzene [4-[ 1-[ 4-hydroxybenzene 5-ylethyl]phenyl]ethylene]biguanide, bis(2,5-dimethyl-4-hydroxyphenyl)-2-hydroxyphenylmethane, 3,3,3,,3, _Tetramethyl-1, Γ-helical bismuth-5,6,7,5',6·,7'·hexanol, 2,2,4 -h methyl _7 2, 4,.  Others, such as 2-methyl-2-(2,4-dihydroxyphenyl)_4_(4_phenyl)-7-hydroxychroman (chroman) , 2-[bis{(5-isopropyl-4-hydroxy-2-methyl)phenyl}methyl], hydroxyphenylmethyl}_4,6-dihydroxyphenyl)-1-methylethyl]- 3-(1-(3-{1-(4-hydroxyphenylethyl-28-201100956)}-4,6-dihydroxyphenyl)-1-methylethyl)benzene, 4,6-double {1- (4-Hydroxyphenyl)-1-methylethyl}-1,3-dihydroxybenzene. In the parent core, 'it is preferably 2,3,4,4,-tetrahydro hydroxybenzophenone, 1,1, 1-n-(p-hydroxyphenyl)ethane, 4,4,-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene] biguanide. '1,2-naphthoquinonediazidesulfonic acid halogen is preferably 12-naphthoquinonediazidesulfonic acid chloride. Specific examples of 1,2-naphthoquinonediazidesulfonic acid chloride, for example 1,2-naphthoquinonediazide-4-sulfonic acid chloride and 1,2-naphthoquinonediazide-5-indolesulfonic acid chloride. Among them, the use of 1,2.naphthoquinonediazide Chloride-5-sulfonic acid chloride. In the condensation reaction of a phenolic compound or an alcoholic compound (mother core) with a 1,2-naphthoquinonediazidesulfonic acid halide, relative to phenolation The number of OH groups in the compound or the alcohol compound is preferably from 30 to 85 mol%, more preferably from 50 to 70 mol% of 1,2-naphthoquinonediazidesulfonic acid halide. Further, in the case of the 1,2-quinonediazide compound, the 1,2-naphthoquinonediazide group which is exemplified by the Q-modified ester bond of the above-mentioned Q to form a guanamine bond can also be suitably used. Sulfonium sulfonate, for example, 2,3,4-trihydroxybenzophenone-1,2-naphthoquinonediazide-4-sulfonic acid decylamine, etc. The [B] components may be used alone or in combination. The use ratio of the component [B] in the radiation sensitive resin composition is preferably from 5 to 100 parts by mass, more preferably from 10 to 50 parts by mass, per 100 parts by mass of the copolymer [A]. When the ratio of the component [B] in the resin composition is 5 parts by mass or more, the difference in solubility between the irradiated portion and the unirradiated portion of the aqueous solution which is the aqueous solution of the developer is increased, and patterning is facilitated, and at the same time - 29- 201100956 Good heat resistance and solvent resistance of the obtained partition wall and insulating film. On the one hand, 'by setting the ratio of [B] component When the amount of the alkali aqueous solution in the radiation-irradiated portion is maintained at a sufficiently high level, the development can be easily performed. The component [C] is a thermosensitive dye. The so-called "sensible heat" A dye is a compound which has a coloring property by heating in a state of accepting an electron accepting compound (for example, a proton such as an acid). In terms of a thermosensitive dye, it is particularly preferred to have a lactone and an indoleamine. A part of the skeleton of sultone, spirulina, vinegar, guanamine or the like is preferably a colorless compound which rapidly opens or cleaves the partial skeleton upon contact with the electron accepting compound. Examples of such sensible dyes include 3,3-bis(4-dimethylaminophenyl)_6-dimethylamino phthalide (referred to as "crystal violet lactone"), 3,3- Bis(4-dimethylaminophenyl)decalactone, 3-(4-dimethylaminophenyl)-3-(4-diethylamino-2-tolyl)-6-dimethylamino azlactone , 3-(4-dimethylaminophenyl)-3-(1,2-dimethyl Q indol-3-yl)decanolide, 3-(4-dimethylaminophenyl)-3-(2 -carbam-3-yl) azlactone, 3,3-bis(1,2-dimethyl-3-yl)-5-dimethylaminodecanolide, 3,3-di (1 , 2-dimethyl-3-yl)-6-dimethylamino azlactone, 3,3-bis(9-ethyloxazol-3-yl)-6-dimethylaminodecalactone, 3,3-bis(2-phenylindole-3-yl)-6-dimethylamino azlactone, 3-(4-dimethylaminophenyl)-3-(1-methylpyrrole-3-yl -6-dimethylamino azlactone; 3, 3-bis[l,l-bis(4-dimethylaminophenyl)ethen-2-yl]-4,5,6,7-tetrachloroindole Lactone, 3,3-bis[1,1-bis(4-pyrrolidino)vinyl-2-yl]-4,5,6,7-tetrabromodecanolide, 3,3-dual 1-(4-Dimethylaminophenyl)-1-(4-methoxy-30- 201100956 phenyl)vinyl-2-yl]-4,5,6,7 - Chlorolactone, 3,3-bis[1-(4-pyrrolidinyl)-1-(4-methoxyphenyl)ethen-2-yl]-4,5,6,7-tetrachloro Azlactone, 3-[ 1,1-di(1-ethyl-2-carboxy-3-yl)ethen-2-yl]-3-(4-diethylamine phenyl)decalactone, 3-[ 1,1-bis(1-ethyl-2-methylindol-3-yl)ethenyl-2-yl]-3-(4-N-ethyl-N-anilinophenyl)decanolide , 3-(2-ethoxy-4-diethylamine phenyl)-3-(1-n-octyl-2-carboxy-3-yl)-decalactone, 3,3-dual (1) -n-octyl-2-carboxy-3-yl)-decalactone, 3-(2-methyl-4-diethylaminephenyl)-3-(1-n-octyl-2-carboxamidine酞-3 yl)-decalactone and the like azlactone 0; 4,4-bis-dimethylamino benzoin benzyl ether, N-halophenyl-leuco-auramine , N-2,4,5-dichlorophenyl colorless amine, rhodamine-B-anilinoindol, rhodamine-(4-nitroanilino) indoleamine; rhodamine-B-(4- Chloroanilino), decylamine, 3,7-bis(diethylamino)-10-benzimidylazine, benzamidine leuco methylene blue, 4-nitrobenzhydryl methylene blue; 3,6-Dimethoxyfluorescent yellow fluoran, 3-dimethylamino-7-A Fluorescence Q yellow mother, 3 -diethylamino-6-methoxy campan yellow mother, 3 -diethylamino-7-methoxyfluorescent yellow mother, 3-diethylamino-7-chlorofluorescence Yellow mother, 3-diethylamino-6-methyl-7-chlorofluorescent yellow mother, 3-diethylamino-6,7-dimethylfluorescent yellow mother, 3-N-cyclohexyl-N- n-Butylamino-7-methylfluorescent yellow mother, 3-diethylamino-7-dibenzylamine fluorescent yellow mother, 3-diethylamino-7-octylamine fluorescent yellow mother, 3-two Ethylamino-7-di-n-hexylamine fluorescent yellow mother, 3-diethylamino-7-phenylamine fluorescent yellow mother, 3-diethylamino-7-(2fluoroanilino) fluorescent yellow mother, 3-Diethylamino-7-(2'-chloroanilino)fluorescent yellow mother, 3-diethylamino-7-(3·-chloroanilino)fluorescent yellow mother, 3-diethylamino - 7-(2 31-dichloroanilino) -31- 201100956 Fluorescent yellow mother, 3-diethylamino-7-(3'-trifluoromethylanilino) fluorescent yellow matrix, 3-di- n-Butylamino-7-(2'-fluoroanilino)fluorescent yellow mother, 3-di-n-butylamino-7-(2'-chloroanilino)fluorescent yellow mother, 3-N-isoprene -N-ethylamino-7-(2'-chloroanilino)fluorescent yellow precursor; 3-N-n-hexyl-N-ethylamino-7-(2'-chloroaniline Fluorescent yellow mother, 3-diethylamino-6-chloro-7-aniline fluorescent yellow mother, 3-di-n-butylamino-6-chloro-7-phenylamine fluorescent yellow mother, 3-2-B Amino-6-methoxy-7-phenylamine fluorescent yellow mother, 3-di-n-butylamino-6-ethoxy-7-phenylamine fluorescent yellow mother, 3-pyrrolidine-6-A -7-aniline fluorescent yellow mother, 3-N-hexahydropyridyl-6-methyl-7-phenylamine fluorescent yellow mother, 3-morpholinyl-6-methyl-7-aniline fluorescent yellow matrix , 3-dimethylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-diethylamino-6-methyl-7-aniline fluorescent yellow mother, 3-di-n-butylamino group- 6-methyl-7-aniline fluorescent yellow mother, 3-di-n-pentylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N-ethyl-N-methylamino-6- Methyl-7-aniline fluorescent yellow mother, 3-N-n-propyl-N-methylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N-n-propyl-N-ethylamine Base q -6-methyl-7-aniline fluorescent yellow mother, 3-N-n-butyl-N-methylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N-n-butyl -N-ethylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N-isobutyl-N-methylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N -isobutyl-N-ethylamino-6-A -7-aniline fluorescent yellow mother, 3-N-isopentyl-N-ethylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N-n-hexyl-N-methylamino-6 -Methyl-7-aniline fluorescent yellow mother, 3-N-cyclohexyl-N-ethylamino-6-methyl-7-phenylamine fluorescent yellow precursor, 3-N-cyclohexyl-N-n-propylamino _6_Methyl-7-aniline fluorescent yellow mother, 3-N-cyclohexyl-N-n-butylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-N-cyclohexyl-N- n-Hexylamino-6-methyl-32- 201100956 -7-aniline fluorescent yellow mother, 3-N-cyclohexyl-N-n-octylamino-6-methyl-7-aniline fluorescent yellow matrix; 3- Ν-(2·-methoxyethyl)-N-methylamino-6-methyl-7-phenylamine fluorescent yellow precursor, 3-indole-(2'-methoxyethyl)-indole-ethylamino group- 6-Methyl-7-aniline fluorescent yellow mother, 3_Ν·(2'-methoxyethyl)-Ν-isobutylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-Ν-( 2'-Ethoxyethyl)-indole-methylamino-6-methyl-7-anilinofluorescent yellow mother, 3-indole-(2'-ethoxyethyl)-indole-ethylamino-6 -Methyl-7-anilinofluorescent yellow mother, 3-indole-(3'-methoxypropyl)-indole-methylamino-6-methyl-7-aniline fluorene^ Light yellow mother, 3-Ν -(3'-methoxypropyl)-indole-ethylamino-6-methyl-7-benzene Fluorescent yellow mother, 3-Ν-(3'-ethoxypropyl)-fluorene-methylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-Ν-(3'-ethoxypropyl )-Ν-ethylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-Ν-(2'-tetrahydroindenyl)-fluorene-ethylamino-6-methyl-7-aniline Light yellow precursor, 3-Ν-(4'-methylphenyl)-oxime-ethylamino-6-methyl-7-phenylamine fluorescent yellow mother, 3-diethylamino-6-ethyl-7-aniline Fluorescent yellow mother, 3-diethylamino-6-methyltoluamide, fluorescent yellow mother, 3-diethylamino-6-methylq-7-(2',6'-dimethylaniline Fluorescent yellow mother, 3-di-n-butylamino-6-methyl-7-(2',6'-dimethylamino) fluorescent yellow precursor, 3-di-n-butylamino-7 -(2',6'-dimethylamino)fluorescent yellow mother, 2,2-bis[4'-(3-Ν-cyclohexyl-fluorenyl-methylamino-6-methylfluorescent yellow mother) -7-aminoamine phenyl]propane, 3-[4'-(4-anilinophenyl)amine phenyl]amino-6-methyl-7-chlorofluorescent yellow mother, 3-[4'-(two Fluorescent yellow mother of methylamine phenyl)-amino-5,7-dimethylfluorescent yellow precursor; 3-(2-methyl-4-diethylaminephenyl)-3-(1-ethyl 2-methylindole-3-yl)-4-azaindole lactone 3-(2-n-propoxycarbonylamino-4-di-n-propylamine phenyl)-3-(iethyl-2-carboxy-3-yl)-4-azadecanolactone, 3-(2 -Methylamino-33- 201100956 -4-di-n-propylamine phenyl)-3-(1-ethyl-2-carboxy-3-yl)-4-azadecanolactone, 3-(2 -methyl-4-di-n-hexylamine phenyl)-3-(1-n-octyl-2-carboindole-3-yl)-4,7-diazepine lactone, 3,3-bis (2 -ethoxy-4-diethylamine phenyl)_4_ azaindole, 3,3-bis(1-n-octyl-2-methylindol-3-yl)-4 -azaindole Ester, 3-(2-ethoxy-4-diethylamine phenyl)-3-(1-ethyl-2-carbazin-3-yl)-4-azadecanolactone, 3-( 2-ethoxy-4-diethylamine phenyl)-3-(1-octyl-2-carboxy-3-yl)-4 or 7-azadecalactone, 3-(2-B Oxy-4-diethylamine phenyl)-3-(1-ethyl-2-carboxy-3-yl)-4 or 7·azadecanolide, 3-(2-^hexyloxy) -4-diethylamine phenyl)-3-(1-ethyl-2-carboxy-3-yl)-4 or 7-azapinolide, 3-(2-ethoxy-4-di Ethylamine phenyl)-3-(1-ethyl-2-benzoin-3-yl)-4 or 7-azadecalactone, 3-(2-butoxy-4-diethylamine benzene Benzyl-3-(1-ethyl-2-phenylindole-3-yl)-4 or 7-nitrogen Heterolactone 3-methyl-helix-dinaphthylpyran, 3-ethyl-helix-dinaphthylpyran, 3-phenyl-helix-dinaphthylpyran, 3-benzyl-helix- Dinaphthylpyran, 3-methyl-naphtho-(3-methoxybenzo)spiropyran, 3-propyl-helix-dibenzopyran-3,6-bis(dimethyl q-amino group )F-9-helix-3'-(6'.dimethylamino)decalactone, 3,6-bis(diethylamino)phosphonium-9-helix-3^(6'-dimethylamino) Azlactones such as azlactone; others have 2·-anilino-6'-(Ν-ethyl-Ν-isopentyl)amino-3'-methyl helix [isobenzofuran-1 (3Η), 9'-(9Η)]卩山唱-3-嗣, 21-anilino-6'-(Ν-ethyl-Ν-(4-methylphenyl))amino-3'-methyl helix [isobenzofuran-1 (3H), 9'-(9H)D mountain sing]-3-one, 3'-fluorene, fluorene-dibenzylamino- 6'-fluorene, fluorene-diethylamine-based helix [isobenzofuran-1 (3Η), 9'-(9Η)卩山喔]-3-one, 2'-(Ν-methyl-Ν-phenyl)amino- 6'-(Ν-B Alkyl-fluorene-(4-tolyl)amine-based helix [isobenzofuran-1 (3Η), 9, (9Η) anthraquinone]-3-one, and the like. -34- 201100956 For the commercial products of these thermosensitive pigments, there are ETAC, RED 5 00, RED520, CVL, S-205, BLACK305, BLACK400, BLACK100, BLACK500, Η-70 (Π, GREEN300, NIR BLACK78, BLUE220, H-3035, BLUE203' ATP, Η-1046, Η-2114 (manufactured by Yamada Chemical Industry Co., Ltd.), ORANGE-DCF, Vermilion-DCF, PINK-DCF 'RED-DCF, BLMB, CVL > GREEN-DCF ' T Η - 1 0 7 (Η odogaya Chemical Co., Ltd.), etc. Among these commercial products, ETAC, S-205, BLACK3 05, BLACK400, BLACK100, BLACK500, H-700 1, Ο GREEN300, NIR BLACK78, H-3035, ATP, H-1046, H-2114, GREEN-DCF are preferred because of the good visible light absorption of the formed film. The sensible dyes are visible through the partition walls and insulating films. The light spectrum may be used in combination of two or more kinds of components. The use ratio of the [C] component in the radiation sensitive resin composition is preferably 0. by mass based on 100 parts by mass of the copolymer [A]. 1 to 30 parts by mass, more preferably 0. 5 to 15 parts by mass. By setting the ratio of [C] components to 0. When the amount is 1 part by mass or more, the light of the desired Q can be efficiently absorbed, and the light blocking property is exhibited. On the other hand, by setting the ratio of the component [C] to 30 parts by mass or less, the radiation sensitivity of the radiation sensitive resin composition and the solvent resistance or heat resistance of the obtained partition walls and the insulating film can be favorably maintained. Other optional components The radiation sensitive resin composition of the present invention contains the above [A], [B], and [C] components as essential components, but other may contain: [D] sensible acid generating compound, [E] A polymerizable compound having at least one ethylenically unsaturated double bond, an epoxy resin other than the [F] copolymer [A], a [G] surfactant, and a [H] adhesion aid. -35- 201100956 The heat-sensitive acid generating compound of the [D] component is used to improve the heat resistance or surface hardness of the obtained partition wall and the insulating film. The thermosensitive acid generating compound may, for example, be a salt of a sulfonium salt, a benzothiazolium salt, an ammonium salt or a scale salt. Examples of the above sulfonium salt include alkane sulfonium salt, benzamidine salt, dibenzyl hydrazine salt, and substituted benzyl sulfonium salt. In terms of the onium salts, the alkoxides are, for example, 4-ethenyloxyphenyldimethylhydrazine hexafluoroantimonate, 4-ethenoxyphenyldimethylhydrazine hexafluoroarsenate, dimethyl-4-(benzylidene). Oxycarbonyloxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzylideneoxy)phenylphosphonium hexafluoroantimonate, dimethyl-4-(benzidineoxy)phenylphosphonium hexafluorophosphate Arsenate, dimethyl 3 - chloro - 4 - ethoxy phenyl hexafluoroantimonate, etc.; benzamidine salt such as benzyl-4-hydroxybenzhydryl hexafluoroantimonate 'benzyl-4 - hydroxybenzimidium hexafluorophosphate, 4-ethenoxybenzylbenzyl sulfonium hexafluoroantimonate, benzyl-4-methoxybenzhydryl hexafluoroantimonate, benzyl-2-methyl-4 - hydroxybenzimidium hexafluoroantimonate, benzyl-3-chloro-4-hydroxybenzhydrazinium hexafluoroarsenate, 4-methoxybenzyl-4-hydroxyphthalate hexafluorophosphate, etc.; a dibenzyl sulfonium salt, for example, dibenzyl-4-hydroxyphenylhydrazine hexafluoroantimonate, dibenzyl-4-hydroxyphenylhydrazine hexafluorophosphate, 4-ethenoxybenzoic acid hexafluoroantimonate , dibenzyl-4-methoxybenzoquinone hexafluoroantimonate, dibenzyl-3-chloro-4-hydroxyphenylhydrazine hexafluoroarsenate, dibenzyl-3-methyl-4-hydroxy-5 - Tertiary butylphthalide hexafluoroantimonate, benzyl-4-methoxybenzyl-4- Benzoquinone hexafluorophosphate or the like; the substituted benzamidine salt may, for example, be p-chlorobenzyl-4-hydroxybenzylsulfonium hexafluoroantimonate or p-nitrobenzyl-4-hydroxybenzamide hexafluoroantimonate , p-chlorobenzyl-4-hydroxybenzyl mirror hexafluorophosphate, p-nitrobenzyl-3-methyl-4-hydroxybenzhydrazinium hexafluoroantimonic acid-36- 201100956 salt, 3,5-dichlorobenzyl 4-hydroxybenzimidium hexafluoroantimonate, o-chlorobenzyl-3-chloro-4-hydroxybenzhydrazinium hexafluoroantimonate, and the like. Examples of the above benzothiazole moieties include 3-benzylbenzothiazole hexafluoroantimonate, 3-benzylbenzothiazole gun hexafluorophosphate, 3-benzylbenzothiazole quaternary boron fluoroborate. , 3-(p-methoxybenzyl) benzothiazole iron hexafluoroantimonate, 3-benzyl-2-methylthiobenzothiazole gun hexafluoroantimonate, 3-benzyl-5-chlorobenzene And thiazole gun hexafluoroantimonate. Among these thermosensitive acid generating compounds, an onium salt and a benzothiazole key salt are preferably used. More preferably, it is 4-ethyloxoxime hexafluoroarsenate, benzyl-4-hydroxybenzhydrazinium hexafluoroantimonate, 4-ethenoxabenzamide hexafluoroantimonate, Benzyl-4-hydroxyphenylhydrazine hexafluoroantimonate, 4-ethenoxybenzoquinone hexafluoroantimonate, 3-benzylbenzothiazole gun hexafluoroantimonate. For the commercial products of these sensible acid-generating compounds, Sun A SI-L85, Sunaid SI-L110, Sunaid SI-L145, Sunaid SI-L150, and Sunaid SI-L160 (manufactured by Sanshin Chemical Industry Co., Ltd.) Wait. The use ratio of the [D] component in the radiation sensitive resin composition is preferably 0.% by mass based on 100 parts by mass of the copolymer [A]. 1 to 20 parts by mass is more preferably 1 to 10 parts by mass. By setting the mixing amount of the [D] component to 0. 1 to 20 parts by mass, it is possible to prevent the occurrence of precipitates in the coating film forming step while forming a cured film having sufficient strength. In the case of a polymerizable compound having at least one ethylenically unsaturated double bond of the component [E], for example, a monofunctional (meth) acrylate, a bifunctional (meth) acrylate, or a trifunctional or higher (methyl group) can be suitably used. )Acrylate. -37- 201100956 For monofunctional (meth) acrylates, for example, 2-hydroxyethyl (meth)acrylate, carbitol (meth)acrylate, isobornyl (meth)acrylate, (methyl) 3-methoxybutyl acrylate, 2-(phthalic acid) (meth) propylene oxiranyl 2-hydroxypropyl ester, and the like. Examples of the commercially available monofunctional (meth) acrylates include Aronics M-101, A'ronics M-lll, Aronics M-114 (above, East Asia Synthetic Co., Ltd.), KAYARAD TC -110S, KAYARAD TC-120S (above is manufactured by Nippon Kayaku Co., Ltd.), Viscoat 158, Viscoat 2311 (above, manufactured by Osaka Organic Chemical Industry Co., Ltd.). Examples of the bifunctional (meth) acrylate include ethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, and 1,9-fluorene di(meth)acrylate. Alcohol ester, polypropylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, bisphenoxyethanol decyl diacrylate, bisphenoxyethanol acrylate, and the like. As a commercial item of such a bifunctional (meth) acrylate, for example, Aronics M-210, Aronics M-240, Aronics M-6200 (above, manufactured by Toagosei Co., Ltd.), KAYARADHDDA, and HX can be exemplified. -220, the same as R-604 (the above is manufactured by Nippon Kayaku Co., Ltd.), Viscoat 260, Viscoat 312, and Viscoat 335HP (the above is manufactured by Osaka Organic Chemical Industry Co., Ltd.). Examples of the trifunctional or higher (meth) acrylate include trimethylol (meth)acrylate, neopentyl tris(meth)acrylate, and bis((meth)acryloyloxyethyl)phosphoric acid. Ester, neopentyl tetrakis(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and the like. For commercial products of such trifunctional or higher (meth) acrylates, for example, Aronics M-3 09 'Aronics M-400 ' Aronics M-405 ' Aronics -38- 201100956 M-450 , Aronics M-7 1 00, Aronics M-803 0, Aronics M-8060 (above is East Asia Synthetic Co., Ltd.), KAYARAD TMPTA, KAYARAD DPH A, KAYARAD DPCA-20, KAYARAD DPCA-30, KAYARAD DPCA-60, KAYARAD DPCA-120 (The above is manufactured by Nippon Kayaku Co., Ltd.), Viscoat 295, Viscoat 300, Viscoat 3 60, Viscoat GPT, Viscoat 3PA, and Viscoat 400 (above, manufactured by Osaka Organic Chemical Industry Co., Ltd.). Among these methyl (acrylate) types, it is preferable to use a trifunctional or higher (meth) acrylate from the viewpoint of improvement in heat resistance and surface hardness of the formed partition wall and the insulating film. Among them, trimethylol (meth)acrylate, neopentyl tetra(meth)acrylate, and neopentyl hexa(meth)acrylate are preferred. These monofunctional, bifunctional or trifunctional or higher functional (meth) acrylates may be used singly or in combination. The use ratio of the [E] component in the radiation sensitive resin composition is preferably from 1 to 50 parts by mass, more preferably from 3 to 30 parts by mass, based on 100 parts by mass of the copolymer [A].设定 By setting the mixing amount of the [E] component to 1 to 50 parts by mass, the heat resistance and surface hardness of the obtained partition walls and the insulating film can be improved, and the occurrence of film splitting in the step of forming a coating film on the substrate can be suppressed. . The epoxy resin other than the copolymer [A] of the [F] component is not particularly limited as long as it does not adversely affect the compatibility of the components contained in the radiation sensitive resin composition. Examples of such an epoxy resin are bisphenol A epoxy resin, phenol novolak epoxy resin, cresol novolak epoxy resin, cyclic aliphatic epoxy resin, and glycidyl ester. Epoxy resin, -39- 201100956 Epoxy propylamine type epoxy resin, heterocyclic epoxy resin, resin (co)polymerization of glycidyl methacrylate. Among these, a bisphenol A type epoxy resin, a cresol novolac type epoxy resin, a glycidyl ester type epoxy resin, and the like are particularly preferable. The use ratio of the [F] component in the radiation sensitive resin composition is preferably 30 parts by mass or less based on 100 parts by mass of the copolymer [A]. By using the [F] component in such a ratio, the heat resistance and surface hardness of the partition wall and the insulating film obtained from the self-inductive radiation-linear resin composition can be further improved, and a coating film of a radiation-sensitive resin composition can be formed on the substrate. At that time, a high film thickness uniformity can be obtained. Further, although the copolymer [A] may also be referred to as "epoxy resin", it is different from the [F] component in view of having an alkali solubility. The [F] component is alkali-insoluble. In the radiation sensitive resin composition, a surfactant can be used in order to further improve the applicability of the coating film formation [[G] component. The surfactant which can be suitably used may, for example, be a fluorine-based surfactant, a polyfluorene-based surfactant, or a nonionic surfactant. Examples of fluorine-based surfactants include 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl)ether, 1,1,2,2-tetrafluorooctyl Ether, octaethylene glycol di(i,i,2,2-tetrafluorobutyl)ether, hexaethylene glycol (1,1,2,2,3,3-hexafluoropentyl)ether, octapropylene glycol a fluoroether such as (1,1,2,2-tetrafluorobutyl)ether or hexapropanediol bis(1,1,2,2,3,3-hexafluoropentyl)ether; perfluorododecylsulfonate Sodium fluoride; 1,1,2,2,8,8,9,9,10,10-decafluorododecane, l,l,2,2,3,3-hexafluorodecane, etc. Sodium fluoroalkanesulfonate; fluoroalkane oxyethylene ether; fluoroalkylammonium iodide; fluoroalkane polyoxyethylene ether; -40- 201100956 perfluoroalkane polyoxyethanol; perfluoroalkane alkoxide Class; fluorine alkyl esters and the like. Commercial products of these fluorine-based surfactants include BM-1 000, BM-1100 (above BM Chemie), megafac F142D, megafac F 1 72, megafac F 1 7 3, megafac F 1 8 3 , megafac F 1 7 8 ' megafac F191, megafac F471 (above is made by Dainippon Ink Chemical Industry Co., Ltd.), Fluorad FC-170C, FC-171, FC-430, FC-431 (above Sumitomo 3M (shares) Company), Surflon S-112, SUrflon S-113, Surflon S-131, Surflon S-141, Surflon S-145, Surflon O S-382, Surflon SC-101, Surflon SC-102, Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC-106 (made by Asahi Glass Co., Ltd.), EFTOP EF301, EFTOP 303, EFTOP 352 (made by Shinki Ueda Chemical Co., Ltd.). Specific examples of the polyoxo-based surfactant include commercially available product names such as DC3PA, DC7PA' FS-1 265, SF-8428, SH11PA, SH21PA, SH28PA, SH29PA, SH30PA, SH-190, and SH-193. , SZ-6032 (to the line on Toray.  Dow Corning · Polyoxane Co., Ltd.), TSF-4440, TSF-4300, TSF-4445, TSF-4446, TSF-4460, TSF-4452 (above is GE Toshiba Polyxide Co., Ltd.) Wait. Examples of the nonionic surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether; polyoxyethylene octyl phenyl ether and polyoxyethylene benzene A polyoxyethylene aryl ether such as ether; a polyoxyethylene dialkyl ester such as polyoxyethylene dilaurate or polyoxyethylene distearate; or a (meth)acrylic copolymer. A representative commercial product of a nonionic surfactant is polyflovvNo. 57, 95 (Common Sociology -41 - 201100956 academic (share) system). These surfactants may be used singly or in combination of two or more. In the radiation sensitive resin composition, the surfactant of the [G] component is preferably 〇 with respect to 100 parts by mass of the copolymer [A]. 〇 1 to 5 parts by mass, more preferably 0. 0 5 to 3 parts by mass. By setting the amount of surfactant to be mixed at 0. 0 to 5 parts by mass, and the occurrence of film splitting when a coating film is formed on a substrate can be suppressed. In the radiation sensitive resin composition of the present invention, in order to improve the adhesion to the substrate, an adhesion aid which is a component [H] can be used. In the case of such an adhesion aid, it is preferred to use a functional decane coupling agent. Examples of the functional decane coupling agent include a decane coupling agent having a reactive substituent such as a carboxyl group, a methacryl group, an isocyanate group or an epoxy group. Specific examples of the functional decane coupling agent include trimethoxymethane benzoate, γ-methyl propylene oxypropyl trimethoxy decane 'ethylene triethoxy decane, ethylene trimethoprim, γ-isocyanate C A triethoxylate, gamma-glycidoxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, and the like. In the radiation-sensitive resin composition, the adhesion aid is preferably 0% by mass based on 100 parts by mass of the copolymer [Α]. 1 to 30 parts by mass, more preferably 1 to 25 parts by mass. By setting the mixing amount of the adhesion aid of the [Η] component to 〇·1 to 20 parts by mass', the development residue can be prevented from being developed in the developing step, and the pattern can be easily formed by exhibiting sufficient adhesion with respect to the substrate. Radiation-sensitive resin composition The radiation-sensitive resin composition of the present invention is obtained by uniformly mixing the above [A], [Β], and [C] components, and optional components ([D] to [Η] components). And -42- 201100956 modulation. Usually, the radiation sensitive resin composition ' is preferably dissolved in a suitable solvent, stored in a solution state, and used. For example, a radiation-sensitive resin composition in a solution state can be prepared by mixing the components [A], [B] and [C] and optional components in a predetermined ratio in a solvent. The solvent used for the preparation of the radiation sensitive resin composition can be uniformly dissolved by the components of the above [A], [B] and [C] components and the optional components ([D] to [H] components). The substance which does not react with each component is not specifically limited. The solvent is exemplified as the solvent which can be used as the solvent for producing the copolymerized product [A]. In such a solvent, from the viewpoints of solubility of each component, non-reactivity with each component, and easiness of formation of a coating film, it is preferred to use an alcohol, a glycol ether, or an ethylene glycol alkyl ether acetate. , esters and diethylene glycol alkyl ethers. Among these solvents, benzyl alcohol, 2-phenylethyl alcohol, 3-phenyl-1-propanol, ethylene glycol monobutyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol diethyl ether, and the like are particularly preferred. , diethylene glycol ethyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl acid, propylene glycol monomethyl ether acetate, 2- or 3-methoxypropionic acid methyl ester, 2- or 3 · ethoxy Ethyl propionate. Further, in order to increase the in-plane uniformity of the film thickness of the formed coating film, a high boiling point solvent may be used together with the solvent. Examples of high-boiling solvents that can be used include, for example, N-methylformamide, N,N-dimethylformamide, N-methyl N-aniline, N-methylacetamide, N, N. - Dimethylacetamide, N-methylpyrrole n-butanone, dimethyl hydrazine, benzyl ether, dihexyl ether, acetone acetone, isophorone, hexanoic acid, octanoic acid, 1-octanol, hydrazine , benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate-43- 201100956 olefin ester, propyl carbonate, phenyl cellosolve B Acid esters, etc. Among these high boiling solvents, N-methylpyrrolidone, γ-butyrolactone, and N,N-dimethylacetamide are preferred. The solvent for the radiation-sensitive resin composition is preferably used in an amount of from 1 to 40% by mass, more preferably from 3 to 30% by mass, based on the total amount of the solvent, in the case of using a high-boiling solvent. By setting it as 1 to 40% by mass, the coating property at the time of forming a coating film can be further improved, and the decrease in radiation sensitivity and residual film ratio can be suppressed. In the case where the modulating radiation-sensitive resin composition is in a solution state, components other than the solvent (that is, components of the copolymer [A], [B], and [C], and other optional components) are occupied in the solvent solution. The ratio may be arbitrarily set depending on the purpose of use or the desired film thickness, etc., but is preferably from 5 to 50% by mass, more preferably from 1% to 40% by mass, still more preferably from 15 to 35% by mass. %. As a result, the solution of the radiation sensitive resin composition prepared is a pore size of 0. A micropore filter of about 2 μηι is filtered and used. Formation of partition wall and insulating film 0 Next, a method of forming the partition wall and the insulating film of the present invention using the above-described radiation sensitive resin composition will be described in detail later. This method is described in the following order and includes the following steps. (1) a step of forming a coating film of the radiation sensitive resin composition of the present invention on a substrate; (2) a step of irradiating at least a part of the coating film formed in the step (1) with radiation; (3) in the step (2) a step of developing a coating film for irradiating radiation; and (4) a step of heating the coating film developed in the step (3). -44 - 201100956 (1) Step of forming a coating film of a radiation sensitive resin composition on a substrate In the step (1), a solution of the radiation sensitive resin composition of the present invention is applied onto a surface of a substrate. Preferably, the solvent is removed by prebaking, and a coating film of the radiation sensitive resin composition is formed. The type of the substrate that can be used is, for example, a glass substrate, a germanium wafer, and a substrate on which various metals are formed on the surface. The method of applying the composition solution is not particularly limited, and for example, a spray method or a roll coating may be employed. A suitable method such as a cloth method, a spin coating method (spin coating method), a slit die coating method, a bar coating method, or an inkjet method. Among these coating methods, a spin coating method and a slit die coating method are particularly preferred. The pre-baking conditions vary depending on the type of each component, the ratio of use, and the like, but can be set, for example, at 60 to 110 ° C for about 30 seconds to 15 minutes. On the film thickness of the formed coating film, the crucible after prebaking can be set to 3 to 6 μm. (2) Step of irradiating at least a part of the coating film with radiation In the step (2) above, the radiation is irradiated through a mask having a predetermined pattern in the formed coating film. Examples of the radiation used at this time include ultraviolet rays, far ultraviolet rays, X-rays, and charged particle rays. Examples of the ultraviolet rays include a g-line (wavelength of 43 6 nm), an i-line (wavelength of 3 65 nm), and the like. In terms of far ultraviolet rays, there are, for example, KrF excimer lasers. For the X-ray, there are, for example, synchrotron radiation. Examples of the charged particle beam include, for example, an electron beam. Among these radiations, ultraviolet rays are preferable, and among ultraviolet rays, radiation containing g-line and/or i-line is particularly preferable. In terms of exposure, it should be 50 to 1,500 J/m2. (3) Developing step -45 - 201100956 (3) In the developing step, "developing" is performed with respect to the coating film irradiated with radiation in the above step (2), and the irradiated portion of the radiation is removed to form a desired pattern. For the developer used in the development treatment, for example, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium methyl citrate, ammonia, ethylamine, n-propylamine, diethylamine, diethylamine ethanol, or the like can be used. Di-n-propylamine, triethylamine, methyldiethylamine, dimethylethanolamine, triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, pyrrole, piperidine, 1,8-diazabicyclo[5 An aqueous solution of a base (basic compound) of 4,0]-7-undecene, 1,^ 1,5-diazabicyclo[4,3,0]-5-nonane. Further, an aqueous solution of a water-soluble organic solvent such as methanol or ethanol or an aqueous solution of a surfactant may be added to the aqueous solution of the base; or a small amount of an aqueous alkali solution containing various organic solvents in which the radiation-sensitive resin composition is dissolved may be used as a developing solution. . Further, as the developing method, a suitable method such as a liquid-filling method, a dipping method, a shaking dipping method, a rinsing method, or the like can be used. The development time varies depending on the composition of the radiation-sensitive resin composition, and can be set, for example, from 3 to 12 seconds. Further, in the well-known radiation sensitive resin composition, when the development time is more than about 20 to 25 seconds from the optimum, since the peeling occurs in the formed pattern, it is necessary to strictly control the development time. On the other hand, since the radiation-sensitive resin composition of the present invention has a high development margin, even if it is more than 30 seconds from the optimum development time, a good pattern can be formed, and the advantage in product productivity is extremely large. (4) Heating step-46-201100956 (4) In the heating step, after the (3) development step, the rinsing treatment by running water is preferably performed with respect to the patterned film, and then, by It is preferable that the radiation caused by the high-pressure mercury lamp or the like is subjected to total irradiation (post-exposure), and the decomposition treatment of the 1,2-quinonediazide compound remaining in the film can be performed. Then, the film is subjected to a heat treatment by a heating means such as a hot plate or an oven, and the film is subjected to heat treatment (post-baking treatment) to perform film hardening treatment. The exposure amount in the subsequent exposure described above is preferably about 2,000 to 5,000 Å/m2. Further, the firing temperature in the hardening treatment is, for example, 120 to 250 °C. The heating time varies depending on the type of the heating machine. However, for example, the heat treatment on the hot plate may be set to 5 to 30 minutes, and the heat treatment in the oven may be set to 30 to 90 minutes. In this case, a step baking method or the like which performs two or more heating steps may be used. As a result, a partition wall for the purpose or a pattern-shaped film corresponding to the insulating film can be formed on the surface of the substrate. The partition wall or the insulating film formed in the above manner can be understood from the examples described later, and all of the radiation sensitivity, the development margin (the scale of developability), the solvent resistance, the heat resistance, and the total light transmittance (the light-shielding property) The scale) and the dielectric constant (the scale of the dielectric properties) show extremely excellent characteristics. EXAMPLES The present invention will be further specifically described by way of Synthesis Examples and Examples, but the present invention is not limited to the following examples. The weight average molecular weight (Mw) and the number average molecular weight (?n) of the copolymer obtained from the following Synthesis Examples and Comparative Synthesis Examples can be measured by gel permeation chromatography (GPC) of the following specifications. -47- 201100956 Device: GPC-101 (made by Showa Denko Co., Ltd.) Column: Combined with GPC-KF-801, GPC-KF-802, GPC-KF-803 and GPC-KF-8〇4 (Showa Denko ( Share) company's mobile phase: containing phosphoric acid 0. Synthesis Example of a 5% by mass of tetrahydrofuran copolymer [Synthesis Example 1] In a flask equipped with a cooling tube and a stirrer, 7 parts by mass of 2,2,-azobis-(2,4-dimethylvaleronitrile) was charged, and 200 parts by mass of ethylene glycol ethyl ether. Next, 14 parts by mass of methacrylic acid and tricyclomethacrylate were added. 2. 1. 02'6] 16 parts by mass of decane-8 ester, 20 parts by mass of 2-cyclohexyl acrylate, 40 parts by mass of glycidyl methacrylate, N-(3,5-dimethyl-4-hydroxybenzyl group ) methacrylamide 1 part by mass and 3 parts by mass of α-methylstyrene dimer, which were slowly stirred after being substituted with nitrogen. The temperature of the solution was raised to 70 ° C, and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A-1]. The converted polystyrene weight average molecular weight (Mw) of the copolymer [A-1] was 8,000, and the molecular weight fraction Q cloth (Mw/Mn) was 2. 3. Further, the solid solution concentration of the polymer solution obtained here is 3 4. 4 quality. /〇. [Synthesis Example 2] In a flask equipped with a cooling tube and a stirrer, 9 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 22 parts by mass of diethylene glycol ethyl ether were charged. . Next, 12 parts by mass of methacrylic acid, 12 parts by mass of p-methoxystyrene, 15 parts by mass of 1-(tetrahydropyran-2-oxy)-butyl-3-en-2-one, and a methacrylic acid ring were charged. 40 parts by mass of oxypropyl ester, 1 part by mass of N-cyclohexamethyleneimine, and 1 part by mass of hydrazine-(3,5-dimethyl-4-hydroxybenzyl)methacrylamide. And α-methylphenylethyl-48-201100956 3 parts by mass of the olefin dimer, after being substituted with nitrogen, began to stir slowly. The temperature of the solution was raised to 70 ° C, and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A-2]. The converted polystyrene weight average molecular weight (Mw) of the copolymer [A-2] was 8,100, and the molecular weight distribution (Mw/Mn) was 2. 4. Further, the solid solution concentration of the polymer solution obtained here is 3 2. 7% by mass. [Synthesis Example 3] In a flask equipped with a cooling tube and a stirrer, 7 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol ethyl ether were charged. Next, 14 parts by mass of methacrylic acid and tricyclomethacrylate were added [5. 2. 1. 02'6] 16 parts by mass of decane-8 ester, 10 parts by mass of p-methoxystyrene, 40 parts by mass of glycidyl methacrylate, 20 parts by mass of m-hydroxybenzyl methacrylate, and α-methylstyrene After 3 parts by mass of the dimer, after substituting with nitrogen, stirring was slowly started. The temperature of the solution was raised to 7, and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A-3]. The converted polystyrene of the copolymer [A-3] had a weight average molecular weight (Mw) of 8,500 and a molecular weight distribution (Mw/Mn) of 2. 3. Further, the solid solution concentration of the polymer solution obtained here is 3 4. 1% by mass. [Synthesis Example 4] A flask equipped with a cooling tube and a stirrer was charged with 2,2'-azobis-(2,4-dimethylvaleronitrile and 220 parts by mass of diethylene glycol ethyl ether. 11 parts by mass of methacrylic acid, 12 parts by mass of tetrahydrofurfuryl methacrylate, 40 parts by mass of glycidyl methacrylate, 15 parts by mass of N-cyclohexylmethyleneimine, and lauric methacrylate 10 parts by mass of the ester, 10 parts by mass of α-methyl-p-hydroxystyrene, and 3 parts by mass of the α-methylstyrene dimer were gradually stirred after being substituted with nitrogen, and the temperature of the solution was raised to 70 ° C. The temperature of -49-201100956 was maintained for 5 hours to obtain a polymer solution containing the copolymer [A-4]. The converted polystyrene of the copolymer [A-4] had a weight average molecular weight (Mw) of 8,000, and the molecular weight was 8,000. The distribution (Mw/Mn) is 2. 3. Further, the solid solution concentration of the resultant solution obtained here was 3 1 . 9% by mass. [Synthesis Example 5] In a flask equipped with a cooling tube and a stirrer, 7 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol ethyl ether were charged. Next, 14 parts by mass of methacrylic acid and tricyclomethacrylate were added [5. 2. 1. 02'6] 16 parts by mass of decane® -8 ester, 20 parts by mass of 2-methylcyclohexyl acrylate, 40 parts by mass of glycidyl methacrylate, and hydroxyl group of 4,4′-isopropylene glycol 10 parts by mass of a compound having a methyl methacrylate group and 3 parts by mass of a-methylstyrene dimer were introduced, and after being substituted with nitrogen, stirring was gradually started. The temperature of the solution was raised to 70 ° C, and this temperature was maintained for 4 hours to obtain a polymer solution containing the copolymer [A-5]. The converted polystyrene of the copolymer [A-5] had a weight average molecular weight (Mw) of 7,000 and a molecular weight distribution (Mw/Mn) of 2. 5. Further, the solid concentration of the Q polymer solution obtained here is 3 4. 8% by mass. [Synthesis Example 6] In a flask equipped with a cooling tube and a stirrer, 7 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol ethyl ether were charged. Next, 14 parts by mass of methacrylic acid and tricyclomethacrylate were added [5. 2. 1. 02'6] 16 parts by mass of decane-8 ester, 20 parts by mass of 2-cyclohexyl acrylate, 40 parts by mass of glycidyl methacrylate, and 1 -methacryloxy-4-naphthol 1 〇 mass The mixture and 3 parts by mass of the α-methylstyrene dimer were gradually stirred after being substituted with nitrogen. The temperature of the solution was raised to 7 (TC, maintaining this temperature for 4 hours) to obtain a polymer solution containing the copolymer [々-6]. The average weight of the converted polystyrene of the copolymer [human-6] The molecular weight (Mw) was 8,000 and the molecular weight distribution (Mw/Mn) was 2. 5. Further, the solid solution concentration of the polymer solution obtained herein is 34. 6% by mass. [Comparative Synthesis Example 1] In a flask equipped with a cooling tube and a stirrer, 8 parts by mass of 2,2'-azobis-(2,4-dimethylvaleronitrile) and 220 parts by mass of diethylene glycol ethyl ether were charged. . Next, 12 parts by mass of methacrylic acid, 12 parts by mass of p-methoxystyrene, and 15 parts by mass of 1-(tetrahydrofuran-2-oxo)-butyl-3-en-2-one, methacrylic acid were charged. 40 parts by mass of glycidyl ester, 10 parts by mass of N-cyclohexylmethyleneimine, tricyclomethyline [5. 2. 10 parts by mass of 1_02,6]decane-8 ester and 3 parts by mass of a-methylstyrene dimer were gradually stirred after being substituted with nitrogen. The temperature of the solution was raised to 70 ° C to maintain this temperature for 4 hours to obtain a polymer solution containing the copolymer [a-1]. The converted polystyrene weight average molecular weight (Mw) of the copolymer [a-1] was 8,900' molecular weight distribution (Mw/Mn) was 2. 5. Further, the solid solution concentration of the polymer solution obtained at Q was 32. 9% by mass. <Preparation of Radiation-Sensitive Resin Composition> [Example 1] The solution [A] containing the copolymer [A-1] of Synthesis Example 1 corresponds to 1 part by mass of the copolymer (solid matter) And [B] is 4,4'-[1-[4-[1-[4-hydroxyphenyl]-1-methylethyl]phenyl]ethylidene]bisphenol (1.0) 30 parts by mass of a condensate (Bl) of 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol); and [C] component 2,-anilino-6'- (N-ethyl-N-isopentyl)amino-3,-methyl helix [isobenzofuran-51- 201100956 -1(3H),9'-(9H)卩山噃]-3-ketone (Cl) 5 parts by mass of the mixture was dissolved in diethylene glycol ethyl ether to have a solid content of 30% by mass, and then filtered through a membrane filter having a diameter of 0 · 2 μm to prepare a radiation-sensitive resin composition. Solution (S-1). [Examples 2 to 5, 7 to 10, and Comparative Examples 1 to 4] The same as Example 1 except that the [A], [Β], and [C] components were used in the same manner as in Table 1 To modulate the solutions (S-2) to (S-5), (S-7) to (S-10), and (s-1) to (s-4) of the radiation sensitive resin composition. D [Example 6] Except that it was dissolved in diethylene glycol ethyl ether / propylene glycol monocarboxylic acid acetate = 6 / 4 (mole ratio) so that the solid content concentration was 20 mass %, otherwise, and Example 1 Similarly, a solution of the radiation sensitive resin composition is prepared (S-6. In Table 1, the abbreviations of the components represent the following compounds. (Β-1): 4,4·-[1-[4-[1·[4 -hydroxyphenyl]-1-methylethyl]phenyl]ethylidene Q-based]bisphenol (1.0 mol) and 1,2-naphthoquinonediazide-5-sulfonic acid chloride (2.0 mol) Condensate (Β·2): 1,1,Bushen (p-hydroxyphenyl)ethane (1.〇莫耳) and 丨, 2-naphthoquinonediazidesulfonate chloride (2. Condensate (Cl): 21-anilino-6,-(Ν-ethyl-oxime-isopentyl)amino-3,-methylspiro[isobenzofuran-l(3H), 9' -(9H)t!lIl嗤]-3-one (Yaida Chemical Industry Co., Ltd. made by the company's trade name S205) -52- 201100956 * (C-2)2|-anilino- 6'-(N-B --N-(4-tolyl))amino-3'-methylspiro[isobenzofuran-1(3H),9,-(9H)卩山哩]-3-one (Yamada Chemical Industry) (share) company system, trade name ETAC) (C-3) 3'-N,N-dibenzylamino group - 6,-N , N-diethylamine spiral [isobenzoquinone-l(3H), 9'-(9H)l] hawthorn]-3-one (manufactured by Hodogaya Chemical Co., Ltd., trade name GREEN DCF) (:-4) 2,-(1^-methyl-:^phenyl)amino-6,-(^[-ethyl-:^-(4-methylphenyl))amine-based helix [isobenzo] Furan-1(3H),9,-(9H)卩山嘎]-3-one (Yamada 彳匕 _ U Industrial Co., Ltd., trade name ATP) (G) Surfactant: SH28PA (Toray. Dow (G) Adhesive Additive: β-(3,4-epoxycyclohexyl)ethyltrimethoxyoxane (Χ-1) Low Molecular Color Reagent: BONJET BLACK0052 (Oriental Chemical Industry Co., Ltd.) (X-2) Low Molecular Color Reagent: 4-Phenol

-53- 201100956 表1 組成物種 共聚! 誠分 [B诚分 [c诚分 其它成分 類 種類 質量份 麵 質量份 種類 質量份 種類 質量份 實施例1 (S-1) A-1 100 B-1 30 C-l 5 — — 實施例2 (S-2) A-1 100 B-1 30 C-2 5 Η 5 實施例3 (S-3) A-2 100 B-1 30 C-3 5 — — 實施例4 (S-4) A-2 100 B-2 30 C-4 5 — — 實施例5 (S-5) A-2 100 B-1/B-2 15/15 C-l 10 — — 實施例6 (S-6) A-1 100 B-1 30 C-l 5 G 0.1 實施例7 (S-7) A-3 100 B-1 30 C-l 5 — — 實施例8 (S-8) A-4 100 B-1 30 C-l 5 — — 實施例9 (S-9) A-5 100 B-1 30 C-l 5 — — 實施例10 (S-10) A-6 100 B-1 30 C-l 5 — — 比較例1 (s-1) a-1 100 B-1 30 C-l 5 一 — 比較例2 (s-2) A-1 100 B-1 30 — 一 — — 比較例3 (s-3) A-1 100 B-1 30 — — X-l 5 比較例4 (s-4) a-1 100 B-1 30 — — X-2 10 <作爲隔壁及絕緣膜之性能評價> .[實施例1 1至20、比較例5至^ 8] 使用如上述調製的感放射線性樹脂組成物,以下列方 式,評價作爲隔壁及絕緣膜之各種特性。 〔放射線感度之評價〕 關於實施例1 1至1 5、1 7至2 0、及比較例5至8,係使 用旋轉器,而關於實施例16係使用縫模塗佈機,在矽基板 上塗布表2記載之組成物後,在90 °C,於熱板上預烘烤2 分鐘,形成膜厚3.0 μηι之塗膜。相對於所得之塗膜,使用 佳能(股)公司製PLA-501F曝光機(超高壓汞燈),經由具有 預定之圖形的圖形光罩,改變曝光時間,進行曝光後,利 用表2記載濃度之氫氧化四甲銨水溶液以2 5 °C、8 0秒盛液 -54- 201100956 法予以顯影。接著,以超純水進行1分鐘流水洗淨’予以 乾燥,在晶圓上形成圖形。測定爲使3 ·0μιη之線與空間(1 〇 對1 )之空間•圖形完全溶解所需曝光量。使該値作爲放射 線感度(曝光感度)如表2所示。該値在1 000 J/m2以下之情 形可謂感度良好。 〔顯影裕度之評價〕 與上述〔放射線感度之評價〕相同,在矽基板上形成塗 膜。使用佳能(股)公司製PLA-501F曝光機(超高壓汞燈)’ ^ 經由具有3.0μιη之線與空間(10對1)之圖形的光罩,在所 得之塗膜上,以相當於利用上述〔放射線感度之評價〕測 定的放射線感度之値的曝光量進行曝光,利用表2記載的 濃度之氫氧化四甲銨水溶液,在2 5 °C、改變顯影時間’以 盛液法予以顯影。接著,以超純水進行1分鐘流水洗淨’ 予以乾燥,在晶圓上形成圖形。此時,爲了使線的線寬爲 3 .Ομηι,所需顯影時間作爲最適顯影時間則如表2所示。 ^ 又,自最適顯影時間進一步持續顯影時,測定3·0μιη之線· 圖形剝離爲止之時間,作爲顯影裕度(顯影時間之容許範圍) 而如表2所示。該値爲3 0秒以上時,可謂顯影裕度爲良好。 〔耐溶劑性之評價〕 與上述〔放射線感度之評價〕相同,在矽基板上形成塗 膜。將所得塗膜在潔淨烤爐內,於220 °C,加熱1小時, 獲得硬化膜。測定所得硬化膜之膜厚(T 1) °接著’將該硬 化膜所形成之矽基板,浸漬於控制於70°C溫度的二甲亞》 中2 0分鐘後,測定該硬化膜之膜厚(tl),計算浸漬所致膜 -55- 201100956 厚變化率{ I tl-T1 I /ΤΙ }χ 100〔 %〕。膜厚變化率之結果如 表2所示。該値在4 %以下時,耐溶劑性可謂良好。此外, 在耐溶劑性之評價中由於形成之膜的圖形化並不需要,故 省略放射線照射步驟及顯影步驟,而僅進行塗膜形成步驟 及加熱步驟,並供評價。 〔耐熱性之評價〕 與上述耐溶劑性之評價相同,形成硬化膜,測定所得硬 化膜之膜厚(Τ2)。接著,將該硬化膜所形成之矽基板,在 V 潔淨烤爐內,於2 4 (TC,追加烘烤1小時後,測定該硬化 膜之膜厚(t2),計算追加烘烤所致膜厚變化率 {|t2-T2|/T2}xl00〔%〕。 耐熱性之結果如表2所示。該値爲1 %以下時,耐熱性 可謂良好。 〔全透光率(遮光性)之評價〕 除了使用玻璃基板「C〇rning7059 (Corning公司製)」以 Q 替代矽基板以外,其他則與上述〔耐溶劑性之評價〕相同, 在玻璃基板上形成硬化膜。 使用分光光度計「1 50-20型Double-beam(日立製作所 (股)公司製)」,將具有該硬化膜的玻璃基板之全透光率以 3 8 0至780nm之範圍之波長測定。全透光率之値如表2所 示。該値小於50%時,遮光性可謂良好。 〔介電常數之評價〕 在已硏磨的SUS304製基板上,關於實施例11至15、 17至20、及比較例5至8係使用旋轉器,而關於實施例 -56- 201100956 16,係使用縫模塗佈機,在塗布表2記載之組成物後’於 90 °C,在熱板上預烘烤2分鐘,形成膜厚3.0 μιη之塗膜。 藉由將所得之塗膜在潔淨烤爐內,以220°C燒成1小時, 獲得硬化膜。關於該硬化膜,藉由蒸鍍法形成Pt/Pd電極 圖形,以製成介電常數測定用樣本。 使用橫河.Hewlett-Packard(股)公司製HP16451B電極 及HP4284A精密LCR測量器,以頻率10kHz之頻率,藉 由CV法測定樣本之介電常數。介電常數之結果如表2所 Ο 示。該値爲3.7以下時,介電率可謂良好。此外,在介電 率之評價中,由於形成之膜之圖形化並不需要,故可省略 放射線照射步驟及顯影步驟,而僅進行塗膜形成步驟及加 熱步驟,以供評價。-53- 201100956 Table 1 Composition of species copolymerization! Chengfen [B Chengcheng [c Cheng Cheng other classification categories quality part size mass parts type mass parts type mass parts Example 1 (S-1) A-1 100 B-1 30 Cl 5 - Example 2 (S-2) A-1 100 B-1 30 C-2 5 Η 5 Example 3 (S-3) A-2 100 B-1 30 C-3 5 — — Implementation Example 4 (S-4) A-2 100 B-2 30 C-4 5 - Example 5 (S-5) A-2 100 B-1/B-2 15/15 Cl 10 - Example 6 (S-6) A-1 100 B-1 30 Cl 5 G 0.1 Example 7 (S-7) A-3 100 B-1 30 Cl 5 — Example 8 (S-8) A-4 100 B -1 30 Cl 5 - Example 9 (S-9) A-5 100 B-1 30 Cl 5 - Example 10 (S-10) A-6 100 B-1 30 Cl 5 - Comparative Example 1 (s-1) a-1 100 B-1 30 Cl 5 I - Comparative Example 2 (s-2) A-1 100 B-1 30 - One - Comparative Example 3 (s-3) A-1 100 B -1 30 - Xl 5 Comparative Example 4 (s-4) a-1 100 B-1 30 - X-2 10 <Performance evaluation as partition wall and insulating film> [Example 1 1 to 20, Comparative Examples 5 to 8] The radiation-sensitive resin composition prepared as described above was used as the partition wall in the following manner. Various characteristics of the insulating film. [Evaluation of Radiation Sensitivity] With respect to Examples 1 to 15, 17 to 20, and Comparative Examples 5 to 8, a rotator was used, and in Example 16, a slit coater was used on a ruthenium substrate. After coating the composition described in Table 2, it was prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. With respect to the obtained coating film, a PLA-501F exposure machine (ultra-high pressure mercury lamp) manufactured by Canon Co., Ltd. was used, and the exposure time was changed via a pattern mask having a predetermined pattern, and after exposure, the concentration shown in Table 2 was used. The aqueous solution of tetramethylammonium hydroxide was developed at 25 ° C, 80 seconds, liquid-54-201100956. Then, it was washed with ultrapure water for 1 minute, and then dried to form a pattern on the wafer. The amount of exposure required to completely dissolve the space of the line of 3 · 0 μηη and the space (1 〇 to 1) is completely dissolved. The enthalpy was used as the radiation sensitivity (exposure sensitivity) as shown in Table 2. The 値 is below 1 000 J/m2 and the sensitivity is good. [Evaluation of development margin] As in the above [Evaluation of radiation sensitivity], a coating film was formed on the ruthenium substrate. Using a PLA-501F exposure machine (Ultra High Pressure Mercury Lamp) manufactured by Canon Co., Ltd.' ^ via a mask having a pattern of line and space (10 to 1) of 3.0 μm, on the obtained coating film, equivalent use The exposure amount of the radiation sensitivity measured by the above [Evaluation of Radiation Sensitivity] was exposed, and development was carried out by a liquid-holding method using a tetramethylammonium hydroxide aqueous solution having a concentration shown in Table 2 at a change of development time at 25 ° C. Then, it was washed with ultrapure water for 1 minute, and dried, and a pattern was formed on the wafer. At this time, in order to make the line width of the line 3 Ομηι, the required development time as the optimum development time is as shown in Table 2. ^ Further, when the development was continued from the optimum development time, the time from the line of 3.00 μm to the peeling of the pattern was measured, and the development margin (the allowable range of the development time) was as shown in Table 2. When the enthalpy is 30 seconds or more, the development margin is good. [Evaluation of Solvent Resistance] As in the above [Evaluation of Radiation Sensitivity], a coating film was formed on the ruthenium substrate. The obtained coating film was heated in a clean oven at 220 ° C for 1 hour to obtain a cured film. The film thickness (T 1) of the obtained cured film was measured, and then the film thickness of the cured film was measured by immersing the ruthenium substrate formed of the cured film in dimethyl ya at a temperature controlled at 70 ° C for 20 minutes. (tl), Calculate the film caused by impregnation -55- 201100956 Thickness change rate { I tl-T1 I /ΤΙ }χ 100 [%]. The results of the film thickness change rate are shown in Table 2. When the enthalpy is 4% or less, the solvent resistance is good. Further, in the evaluation of the solvent resistance, since the patterning of the formed film is not required, the radiation irradiation step and the development step are omitted, and only the coating film forming step and the heating step are performed and evaluated. [Evaluation of heat resistance] A cured film was formed in the same manner as the evaluation of the solvent resistance described above, and the film thickness (Τ2) of the obtained hardened film was measured. Next, the tantalum substrate formed by the cured film was measured in a V-clean oven at 24 (TC, additional baking for 1 hour, and the film thickness (t2) of the cured film was measured, and the film caused by additional baking was counted. Thickness change rate {|t2-T2|/T2}xl00 [%] The results of heat resistance are shown in Table 2. When the enthalpy is 1% or less, heat resistance is good. [Full light transmittance (light blocking property) Evaluation] A cured film was formed on a glass substrate in the same manner as in the above [Evaluation of Solvent Resistance], except that the glass substrate "C〇rning7059 (manufactured by Corning)" was used instead of the ruthenium substrate. Using a spectrophotometer "1 50-20 type Double-beam (manufactured by Hitachi, Ltd.), the total light transmittance of the glass substrate having the cured film is measured at a wavelength in the range of 380 to 780 nm. As shown in Table 2, when the enthalpy is less than 50%, the light-shielding property is good. [Evaluation of dielectric constant] On the SUS304 substrate which has been honed, Examples 11 to 15, 17 to 20, and Comparative Example 5 are used. The 8 series uses a rotator, and regarding the embodiment -56-201100956 16, a slot die coater is used, After the composition described in Table 2 was placed, it was prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. The obtained coating film was placed in a clean oven at 220 ° C. The cured film was obtained by firing for 1 hour. A Pt/Pd electrode pattern was formed by a vapor deposition method to prepare a sample for dielectric constant measurement. HP16451B electrode manufactured by Yokogawa Hewlett-Packard Co., Ltd. was used. And the HP4284A precision LCR measuring device measures the dielectric constant of the sample by the CV method at a frequency of 10 kHz. The results of the dielectric constant are shown in Table 2. When the 値 is 3.7 or less, the dielectric constant is good. In the evaluation of the dielectric constant, since the patterning of the formed film is not required, the radiation irradiation step and the development step can be omitted, and only the coating film forming step and the heating step can be performed for evaluation.

-57- 201100956 CN嗽 介電常數 cn rn rn r- rn rn 卜 rn 卜 rn 卜 rn ΓΛ rn ΚΠ rn CO 卜 rn 全透光率 g Ο 〇 o 〇 O O O 〇 o o S 耐熱性 膜厚變化率 (%) r-H T-^ »-h »''< <N (N 硬化後膜 厚(μιη) yn oi in CN KT) CN (N rsi CN vn CN CN CN vn oi (N (N CN vn <N 耐溶劑性 膜厚變化率 (%) ΓΛ m 寸 寸 寸 ro 寸 寸 cn m ΓΟ 硬化後膜 厚(μιη) (N iT) CN iT) CN (N <N m cs in CN oi m (N CN (N (N vn <N to (N 顯影裕度 顯影裕度 (秒) m 沄 r〇 cn vn m yr) m m m v〇 m 最適顯影 時間(秒) § § § § 放射線感度 感度 (J/m2) 600 o 550 550 |55〇| | 600 I 600 600 600 I 600 550 600 2000 650 顯影液濃度 (質量%) 寸 o 寸 o 2.38 2.38 2.38 寸· o 寸 o 寸 o 寸 o 寸 o o 寸 o 寸 o 寸 Ο 組成物 種類 1 (S-l) (S-2) (S-3) (S-4) (S-5) (S-6) (S-7) (S-8) (S-9) (S-10) (s-l) (s-2) (s-4) 實施例11 _1 |實施例12| 1實施例13| 丨實施例14| |實施例15| 丨實施例16| I實施例n| |實施例18| 1實施例19| 實施例20 比較例5 1比較例6 1 比較例7 丨比較例.8 1 — 8ς- 201100956 由表2所示結果可知,在使用實施例1至10所調製的 感放射線樹脂組成物的實施例11至20中,放射線感度(曝 光感度)、顯影裕度、耐溶劑性、耐熱性、全透光率及介電 常數全部之特點均衡性良好,極其優異。尤其是在所有實 施例中,不使用其他途徑顯色劑,即可獲得45 %以下之全 透光率,可達成顯著良好的遮光性。一方面,在使用不含 含酚骨架不飽和化合物之組成物作爲共聚物之構成化合物 的比較例5,或使用不含感熱色素及顯色劑之組成物的比 〇 較例6中,並無法獲得小於50%之全透光率,尤其是後者 之全透光率成爲70%之非常高的値。又,在使用不含感熱 色素,而含有低分子顯色劑的組成物之比較例7中,雖可 獲得小於5 0 %之全透光率,但是放射線感度則爲極度不良 的値。再者,在使用不含有含酚骨架不飽和化合物,又不 含感熱色素,而含有低分子顯色劑的組成物作爲共聚物之 構成化合物的比較例8(相當於專利文獻3及4之情形),則 無法獲得小於50%之全透光率。 由該等實施例及比較例之結果可知,本發明之感放射線 樹脂組成物,具有可形成絕緣膜之貫穿孔或者3形之凹處 程度之充分顯影性,同時具有對溶劑之高耐性,且兼具優 異放射線感度與高遮光性,故作爲隔壁及絕緣膜可適當地 使用。 產業上之可利用性 本發明之感放射線樹脂組成物,由於係使用預定之鹼可 溶性樹脂作爲顯色劑,故具有隔壁及絕緣膜形成時對高溫 -59- 201100956 之耐熱性’可防止顯色劑之昇華,同時可得除了優異放射 線感度、顯影性以外,再加上加熱時的高遮光性。因此, 具備自此等感放射線樹脂組成物所形成之隔壁及絕緣膜的 有機EL元件,顯示良好的對比,作爲顯示裝置之電子零件 可適當使用。 【圖式簡單說明】 fnr 無0 【主要元件符號說明】 〇 $。 〇 -60--57- 201100956 CN嗽 dielectric constant cn rn rn r- rn rn rn rn rn rn rn rn rn ΚΠ rn CO 卜 full light transmittance g Ο 〇o 〇OOO 〇oo S heat resistance film thickness change rate (% rH T-^ »-h »''<<N (N hardened film thickness (μιη) yn oi in CN KT) CN (N rsi CN vn CN CN CN vn oi (N (N CN vn < N Solvent-resistant film thickness change rate (%) ΓΛ m inch inch inch inch inch cn m 硬化 Hardened film thickness (μιη) (N iT) CN iT) CN (N <N m cs in CN oi m (N CN (N CN (N CN (N CN) N (N vn < N to (N development margin development margin (seconds) m 沄r〇cn vn m yr) mmmv〇m optimum development time (seconds) § § § § radiation sensitivity (J/m2) 600 o 550 550 |55〇| | 600 I 600 600 600 I 600 550 600 2000 650 developer concentration (% by mass) inch o inch o 2.38 2.38 2.38 inch · o inch o inch o inch o inch oo inch o inch o inch Ο Composition type 1 (Sl) (S-2) (S-3) (S-4) (S-5) (S-6) (S-7) (S-8) (S-9) (S- 10) (sl) (s-2) (s-4) Example 11 _1 | Example 12 | 1 Example 13 | 丨 Example 14 | | Example 15 | 丨 Example 16| I example n| |Example 18| 1 Example 19| Example 20 Comparative Example 5 1 Comparative Example 6 1 Comparative Example 7 丨Comparative Example 8 1 - 8 ς - 201100956 From the results shown in Table 2, In Examples 11 to 20 in which the radiation-sensitive resin compositions prepared in Examples 1 to 10 were used, radiation sensitivity (exposure sensitivity), development margin, solvent resistance, heat resistance, total light transmittance, and dielectric constant were all The characteristics are well balanced and extremely excellent. Especially in all the embodiments, the total light transmittance of 45% or less can be obtained without using other ways of the color developing agent, and a remarkable good light blocking property can be achieved. On the one hand, the use is not Comparative Example 5 containing a composition containing a phenolic skeleton unsaturated compound as a constituent compound of the copolymer, or a composition using a composition containing no thermosensitive pigment and a color developing agent, in Comparative Example 6, was not able to obtain less than 50%. The light transmittance, especially the latter, is a very high enthalpy of 70%. Further, in Comparative Example 7 in which a composition containing no sensible dye and containing a low molecular color developer was used, although a total light transmittance of less than 50% was obtained, the radiation sensitivity was extremely poor. In addition, Comparative Example 8 which is a constituent compound of a copolymer which does not contain a phenol skeleton-containing unsaturated compound and does not contain a thermotropic dye and contains a low molecular color developer is used (corresponding to Patent Documents 3 and 4) ), it is impossible to obtain a total light transmittance of less than 50%. As is apparent from the results of the above-described examples and comparative examples, the radiation-sensitive resin composition of the present invention has sufficient developability to form a through-hole or a three-dimensional recess of the insulating film, and has high resistance to a solvent, and Since it has excellent radiation sensitivity and high light-shielding property, it can be suitably used as a partition and an insulating film. INDUSTRIAL APPLICABILITY The radiation-sensitive resin composition of the present invention uses a predetermined alkali-soluble resin as a color developing agent, so that heat resistance at a high temperature of -59 to 201100956 when the partition wall and the insulating film are formed can prevent color development. Sublimation of the agent, in addition to excellent radiation sensitivity, developability, coupled with high light-shielding properties during heating. Therefore, the organic EL element having the partition wall and the insulating film formed of the radiation sensitive resin composition described above exhibits good contrast and can be suitably used as an electronic component of a display device. [Simple description of the diagram] fnr has no 0 [Description of main component symbols] 〇 $. 〇 -60-

Claims (1)

201100956 七、申請專利範圍: 1.一種感放射線性樹脂組成物,其含有: [A]鹼可溶性樹脂,其係將含有(a 1)選自不飽和羧酸 及不飽和羧酸酐之至少一者、以及(a2)選自下述式(I)所 示含酚骨架不飽和化合物、下述式(11)所示化合物及下述 式(III)所示化合物構成群組之化合物的單體予以共聚而 成之共聚物’ [B]1,2-醌二疊氮基化合物,及 〇 [C]感熱色素’201100956 VII. Patent application scope: 1. A radiation sensitive resin composition comprising: [A] an alkali-soluble resin which will contain (a1) at least one selected from the group consisting of unsaturated carboxylic acids and unsaturated carboxylic anhydrides. And (a2) a monomer selected from the group consisting of a phenol skeleton-containing unsaturated compound represented by the following formula (I), a compound represented by the following formula (11), and a compound represented by the following formula (III); Copolymerized copolymer '[B] 1,2-quinonediazide compound, and 〇[C] sensible pigment' (Π) -61 201100956 (式(I)中,R1爲氫原子或碳數1至4之烷基;R2〜R6係相 同或相異,爲氫原子、羥基或碳數1至4之烷基;B爲 單鍵、-COO-、或- CONH-; m爲0至3之整數,但R2至 R6之至少1個爲羥基;式(II)中,R1爲氫原子或碳數1 至4之烷基;Y1及Y2係相同或相異,爲氫原子或碳數1 至6之烷基;X1至X4係相同或相異,爲氫原子、碳數i 至4之烷基或鹵素原子;Z爲單鍵或- 〇(CH2)w_,w爲1 至6之整數;式(III)中,R1爲氫原子或碳數1至4之烷 〇 基;Z爲單鍵或- 0(CH2)w·,W爲1至6之整數)。 2.如申請專利範圍第1項之感放射線性樹脂組成物,其中 [A]成分之鹼可溶性樹脂,係使除了(a 1)成分及(a2)成分 ,尙有(a3)含有含環氧基不飽和化合物之單體共聚而成之 共聚物。 3 ·如申請專利範圍第1項之感放射線性樹脂組成物,其中 相對於[A]成分之鹼可溶性樹脂100質量份,[C]成分之感 Q 熱色素之含量爲0.1質量份以上、30質量份以下。 4 . 一種有機EL顯示元件用隔壁,其係由如申請專利範圍第 1、2或3項之感放射線性樹脂組成物所形成。 5 . —種有機E L顯不兀件用絕緣膜,其係由如申請專利範圍 第1、2或3項之感放射線性樹脂組成物所形成。 6. —種有機EL顯示元件用隔壁之形成方法,其包含: (1 )使如申請專利範圍第1、2或3項之感放射線性樹 脂組成物之塗膜形成於基板上之步驟; (2)在步驟(1)形成的塗膜之至少一部分,照射放射線 -62- 201100956 之步驟; (3) 使於步驟(2)照射放射線之塗膜予以顯影之步驟 :及 (4) 使於步驟(3)顯影之塗膜予以加熱之步驟。 7. —種有機EL顯示元件用絕緣膜之形成方法,其包含: (1 )使如申請專利範圍第1、2或3項之感放射線性樹 脂組成物之塗膜形成於基板上之步驟; (2) 使於步驟(1)形成的塗膜之至少一部分照射放射 ❹線之步驟; (3) 使於步驟(2)照射放射線之塗膜予以顯影之步驟 :及 (4) 使於步驟(3)顯影的塗膜予以加熱之步驟。(Π) -61 201100956 (In the formula (I), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R2 to R6 are the same or different and are a hydrogen atom, a hydroxyl group or an alkyl group having 1 to 4 carbon atoms; B is a single bond, -COO-, or -CONH-; m is an integer from 0 to 3, but at least one of R2 to R6 is a hydroxyl group; in the formula (II), R1 is a hydrogen atom or a carbon number of 1 to 4 The alkyl group; Y1 and Y2 are the same or different and are a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and X1 to X4 are the same or different and are a hydrogen atom, an alkyl group having a carbon number of i to 4 or a halogen atom; Z is a single bond or - 〇(CH2)w_, w is an integer from 1 to 6; in the formula (III), R1 is a hydrogen atom or an alkylene group having 1 to 4 carbon atoms; Z is a single bond or - 0 ( CH2)w·, W is an integer from 1 to 6). 2. The radiation-sensitive resin composition according to the first aspect of the patent application, wherein the alkali-soluble resin of the component [A] is such that (a3) contains an epoxy group in addition to the (a1) component and the (a2) component. A copolymer obtained by copolymerization of a monomer of a group of unsaturated compounds. 3. The radiation-sensitive resin composition of the first aspect of the invention, wherein the content of the Q-thermal pigment of the component [C] is 0.1 part by mass or more, based on 100 parts by mass of the alkali-soluble resin of the component [A]. Below the mass. A partition wall for an organic EL display element which is formed of a radiation-sensitive resin composition as disclosed in claim 1, 2 or 3. An organic EL coating insulating film formed of a radiation sensitive resin composition as disclosed in claim 1, 2 or 3. 6. A method of forming a partition wall for an organic EL display element, comprising: (1) a step of forming a coating film of a radiation sensitive resin composition as disclosed in claim 1, 2 or 3 on a substrate; 2) at least a part of the coating film formed in the step (1), irradiating the radiation-62-201100956; (3) the step of developing the coating film irradiated with the radiation in the step (2): and (4) performing the step (3) A step of heating the developed coating film. 7. A method of forming an insulating film for an organic EL display device, comprising: (1) a step of forming a coating film of a radiation-sensitive resin composition as disclosed in claim 1, 2 or 3 on a substrate; (2) a step of irradiating at least a part of the coating film formed in the step (1) with a radiation ridge; (3) a step of developing the coating film irradiated with the radiation in the step (2): and (4) performing the step ( 3) A step of heating the developed coating film. -63- 201100956 四、指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: Μ 。 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式:-63- 201100956 IV. Designated representative map: (1) The representative representative of the case is: None. (2) A brief description of the symbol of the representative figure: Μ . 5. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 姐QSister Q
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Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6155823B2 (en) * 2012-07-12 2017-07-05 Jsr株式会社 Organic EL device, radiation-sensitive resin composition, and cured film
JP5895789B2 (en) 2012-09-24 2016-03-30 Jsr株式会社 Radiation sensitive resin composition, polyimide film, semiconductor element and organic EL element
KR102172818B1 (en) * 2013-04-08 2020-11-02 롬엔드하스전자재료코리아유한회사 Positive-type photosensitive resin composition and cured film prepared therefrom
JP6303588B2 (en) 2013-08-08 2018-04-04 Jsr株式会社 Radiation-sensitive resin composition, insulating film, method for forming the same, and organic EL device
JP5488752B1 (en) * 2013-09-03 2014-05-14 住友ベークライト株式会社 Photosensitive resin material and resin film
KR102215956B1 (en) * 2013-12-20 2021-02-15 제이에스알 가부시끼가이샤 Method for forming hole pattern, resin composition for forming hole pattern, and layered product
JP5613851B1 (en) 2014-02-28 2014-10-29 Jsr株式会社 Display or lighting device
JP6447242B2 (en) 2014-05-15 2019-01-09 Jsr株式会社 Radiation-sensitive resin composition, insulating film, method for producing the same, and organic EL device
CN106462062B (en) 2014-08-12 2020-02-14 Jsr株式会社 Element, insulating film, method for producing the same, and radiation-sensitive resin composition
WO2016098758A1 (en) 2014-12-19 2016-06-23 Jsr株式会社 Light emitting device and manufacturing method for same, manufacturing method for barrier, and radiation-sensitive material
JP2016167447A (en) 2015-03-05 2016-09-15 Jsr株式会社 Light-emitting device and radiation-sensitive material
US10866512B2 (en) 2015-10-21 2020-12-15 Showa Denko K.K. Positive photosensitive resin composition
TWI683182B (en) 2017-04-07 2020-01-21 日商昭和電工股份有限公司 Photosensitive resin composition and method for manufacturing radiation lithography structure
WO2019022089A1 (en) * 2017-07-28 2019-01-31 富士フイルム株式会社 Photosensitive resin composition, photosensitive transfer material, method for producing circuit wiring, and method for producing touch panel
JP6808045B2 (en) * 2017-07-28 2021-01-06 富士フイルム株式会社 Photosensitive resin composition, photosensitive transfer material, circuit wiring manufacturing method, and touch panel manufacturing method
JP6797160B2 (en) 2018-09-10 2020-12-09 昭和電工株式会社 Photosensitive resin composition, organic EL element partition wall, and organic EL element
JP6689434B1 (en) 2019-02-06 2020-04-28 昭和電工株式会社 Photosensitive resin composition, organic EL element partition wall, and organic EL element
JPWO2020240925A1 (en) 2019-05-27 2020-12-03
TWI736307B (en) 2019-06-03 2021-08-11 日商昭和電工股份有限公司 Positive photosensitive resin composition and organic EL element separator
US20220275241A1 (en) 2019-08-28 2022-09-01 Showa Denko K.K. Photosensitive resin composition and organic el element partition wall
JP7229187B2 (en) * 2020-01-29 2023-02-27 Jsr株式会社 Polymer composition, cured film and organic EL device
JPWO2021246445A1 (en) 2020-06-03 2021-12-09
JPWO2022220080A1 (en) 2021-04-14 2022-10-20
CN117480451A (en) 2021-06-02 2024-01-30 日保丽公司 Positive photosensitive resin composition and organic EL element partition wall
CN117882008A (en) 2021-11-08 2024-04-12 日保丽公司 Positive photosensitive resin composition
WO2024101411A1 (en) * 2022-11-10 2024-05-16 Jsr株式会社 Curable composition for organic el elements, cured product for organic el elements and method for producing same, organic el element, and polymer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10170715A (en) 1996-12-12 1998-06-26 Canon Inc Production of resin black matrix, resin black matrix produced by the method, liquid crystal color filter having the black matrix, and liquid crystal panel using the color filter
JPH11273870A (en) 1998-03-24 1999-10-08 Tdk Corp Organic el element
JP2000347397A (en) * 1999-06-04 2000-12-15 Jsr Corp Radiation sensitive resin composition and its use for interlayer dielectric
JP2002116536A (en) * 2000-10-06 2002-04-19 Jsr Corp Radiation sensitive resin composition, its cured body and element
JP4483371B2 (en) * 2003-04-07 2010-06-16 東レ株式会社 Photosensitive resin composition
JP2005266420A (en) * 2004-03-19 2005-09-29 Sumitomo Bakelite Co Ltd Photosensitive resin composition, and semiconductor device and display element using the same
JP4656316B2 (en) * 2005-12-22 2011-03-23 Jsr株式会社 Interlayer insulating film, microlens, and manufacturing method thereof
JP2008009121A (en) * 2006-06-29 2008-01-17 Sumitomo Chemical Co Ltd Colored positive radiation-sensitive resin composition
JP2008122501A (en) * 2006-11-09 2008-05-29 Sumitomo Chemical Co Ltd Positive type radiation-sensitive resin composition
TWI425315B (en) * 2007-01-18 2014-02-01 Jsr Corp Sensitive radiation linear resin composition, interlayer insulating film and microlens, and the like

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