TW201040669A - A method of determining a characteristic - Google Patents

Abstract

A first target population and a second target population are etched into a substrate. The second target population has an asymmetry with respect to the first target population. This can allow the different target populations to be distinguished and characteristics of the different target populations determined.

Description

201040669 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of determining the characteristics of a substrate. [Prior Art] The lithography apparatus is a machine that applies the I pattern to a substrate (usually applied to a target portion of the substrate). The lithography apparatus can be used, for example, in the manufacture of integrated circuits (ic). In this case, a patterned device (which may be referred to as a reticle or main reticle) may be used to create a circuit pattern to be formed on individual layers of 1C. This pattern may be transferred to a substrate (eg, 1 wafer) On the target part (for example, & part of the grain, a grain or several grains). The transfer of the pattern is typically via imaging onto a layer of light-sensitive material (anti-money agent) provided on the substrate. In general, a single substrate will contain a network of sequentially patterned adjacent target portions. The known lithography apparatus comprises: a so-called step=, wherein the mother two target portion* is illuminated by exposing the entire pattern to the target portion at a time; and a so-called scanner, wherein by a broom in a given direction Each of the target portions is irradiated by scanning the substrate via the radiation beam while scanning the pattern while parallel or anti-planar in the J direction. It is also possible to transfer the pattern from the patterned device to the substrate by imprinting the pattern onto the substrate. In order to monitor the lithography procedure, it is necessary to measure the parameters of the patterned substrate, for example, the overlay error between successive layers formed in or on the substrate. There are various techniques for measuring the microstructure formed in a lithography procedure, including the use of scanning electron microscopes and various specialized tools. One form of specialized inspection tool is a scatterometer in which the radiation beam is directed to the surface of the substrate 145551., 3, 201040669. The i h h S measured by the scattered beam or the reflected beam of the 3 h U beam before or after it has been reflected or scattered by the substrate = the property of the substrate can be determined. This can be done, for example, by comparing two main types of scatterometers that are reflected and stored in a known measurement library associated with known substrate properties. The spectral scatterometer directs the broadband to the substrate and measures the spectrum of the radiation (which is a function of wavelength) that is scattered into a particular narrow range of angles. The angular resolution scatterometer enables the fabrication of a number of layers by making a two-color (four) beam 'and measuring the amplitude of the scattered radiation as a function of the angle of the 1C wafer. In order to produce a more detailed pattern, a plurality of lithography can be produced in each layer of fabrication and (4) processing steps: this is called double patt (10) ing. There are many different ways to achieve double patterning. The first of these methods is called lithography-lithography 4 (LELE), and the first pattern is exposed and slid in this method. The second pattern is then exposed and etched. The second pattern has features in the space between the features of the first pattern. Therefore, a pattern of a smaller size can be produced. Another similar dual patterning technique is called lithography_freeze-lithography_etching (LFLE). The pattern is exposed in the resist and then allowed to freeze. The second pattern can then be exposed in the resist and then both patterns etched into the substrate. Another double patterning method is called the spaa method. In the spacer method, the sacrificial template is lowered and the spacer is placed on either side of the sacrificial template and adjacent to the sacrificial template. The template is then removed and the resulting pattern is etched into the substrate. When two lithography steps are used to form a single pattern, there may be some error in the %-n^ placement of features during the step, for example, at 145551.doc 201040669. Similarly, the characteristics of ^ Μ, s, + light may be different from those in the second lithography step. Since there are already two lithography steps, the features exposed during each estimation step may be different and need to be separated. The characteristics of the geodetic light are necessary S class Γ exposed during the second lithography step and form a regular pattern, so it may be difficult to distinguish the two feature sets using the angular resolution political measurement. In the chip technology, spacers are used to create a regular pattern. However, if the interval = s is too small, the pattern will be irregular. Similarly, although the pattern may be residual, it will be difficult to evaluate small irregularities in the pattern. = = 1TM to evaluate the exposure characteristics in each of the exposure steps. However, the yield of the substrate in high-yield manufacturing is not fast enough.幻Cs曰片 [Summary] Ο Therefore, an evaluation is needed for the Shuangcao good type method. The double patterning technique modifies the features: in one embodiment of the invention, 'providing a configuration-quantity-attribute detecting device, a lithography device or a lithography unit, a feature--group on the j-substrate Or - m-characteristic ^ method 'the first-group and the second group are nominally (quality, formed on the substrate - single-layer) (for example, generating a single

The pattern has a period equal to the distance between the feature of the first group and the feature of the second I, the method comprising: forming a first group, the first group comprising a third earth plate a first target population of π-limb G3; forming a second population on the substrate at 145551.doc 201040669 'The second population comprises a second target population, and the first target population of 3H forms a combined target group with the first target population Measuring radiation reflected from the combined target population; and calculating a characteristic of the first population or the second population using a sensation reflected from the target, wherein the second target population has a relative target One of the groups is asymmetrical. Further embodiments, features, and advantages of the present invention, as well as the structure and operation of various embodiments of the present invention, are described in detail. It should be noted that the invention is not limited to the specific embodiments described herein. The embodiments are presented herein for illustrative purposes only. Additional embodiments will be apparent to those skilled in the art in view of the teachings herein. [Embodiment] The embodiments of the present invention will be described by way of example only with reference to the accompanying drawings. In addition, the present invention will be described in conjunction with the accompanying drawings, and the embodiments of the invention. This specification discloses one or more embodiments of the features of the invention. The disclosed embodiments are merely illustrative of the invention. The scope of the invention is not limited to the disclosed examples. The invention is defined by the scope of the appended claims. The described embodiments and the reference to the "an embodiment", "an example embodiment" and the like in the specification may include a specific feature, structure or characteristic, but each embodiment may not necessarily include the A specific feature, structure, or characteristic. Further, the phrases are not necessarily referring to the embodiments. 145551.doc -6- 201040669 In addition, when a specific feature, structure, or characteristic is described in conjunction with the embodiments, it should be understood that the features, structures, or characteristics are The knowledge of the technical experts. :: Ming: The examples can be implemented by hardware, firmware, software or any combination thereof. Embodiments of the invention may also be implemented as instructions stored on a machine-readable medium that can be read and executed by one or more processors. Machine crying can read media can (4) any organization that stores or transmits information in the form of a form that can be read by a machine (eg, a two-way device). For example, a machine; reading media may include: read only memory (ROM); random access memory (RAM); disk storage media; optical storage media; flash memory crying; electrical, optical, acoustic or Other forms of propagating signals (eg, waves, infrared signals, digital signals, etc.); and others. In addition, Boomers, software, routines, instructions may be described herein as performing specific actions. However, it should be understood that the descriptions are for convenience only, and that the operations are in fact, by computing 11 pieces of 'processors, controllers or executing blades, software, routines, instructions, etc. Caused by other devices. However, prior to describing the embodiments in more detail, it is indicative of an example environment in which embodiments of the invention may be practiced. Figure 1 schematically depicts a lithography apparatus. The apparatus includes an illumination system (illuminator) IL configured to condition a radiation beam B (eg, uv radiation or radiation), and a support structure (eg, a reticle stage) MT configured to support the patterned device (eg, , a reticle) MA, and connected to a first locator PM configured to accurately position the patterned device according to a particular parameter; a substrate stage (eg, I45551.doc 201040669 such as 'wafer stage) wt, constructed to Holding a substrate (eg, coating the day of the anti-contact agent) W' and connecting to the second position HPW that is implanted to accurately position the substrate according to specific parameters; and a projection system (eg, a refractive projection lens system) PL' It is configured to project a pattern imparted to the light beam B by the patterned device MA onto the target portion of the substrate to include one or more crystal grains. The illumination system can include various types of optical components for directing, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof. The support structure supports (ie, carries) the patterned device. The support structure holds the patterned device in a manner that depends on the orientation of the patterned element, the design of the lithography apparatus, and other conditions, such as whether the patterned device is held in a vacuum environment. The fulcrum structure can hold the patterned device using mechanical, vacuum, electrostatic or other clamping techniques. The wagon structure can be, for example, a frame or table that is fixed or movable as needed. The support structure ensures that the pattern is, for example, at a desired position relative to the projection system. Any use of the term "main mask" and "mask" can be considered synonymous with the more general technique of "patterned device". The term "patterned device" as used herein shall be interpreted broadly to refer to any device that can be used to impart a pattern to a light beam in a cross section of a radiation beam to form a pattern in the target portion of the panel. It should be noted that the pattern given to the radiation beam by the law right includes a phase shifting feature or a so-called auxiliary # sign, the pattern may not correspond exactly to the target portion of the substrate, the pattern is usually applied to the pattern of the radiation beam. It will correspond to a specific functional layer in a device (such as an integrated circuit) formed in the section of 145551.doc 201040669. The patterned device can be transmissive or reflective. Examples of patterned devices include photomasks, programmable mirror arrays, and programmable LCD panels. The mask is known in the «Medium (four) '^ including binary, alternating phase shift and attenuated phase shifts • t-light (four) type, as well as various hybrid mask types. One example of a programmable mirror array uses a matrix configuration of small mirrors, each of which can be individually tilted to reflect the incident light beam in different directions. The tilting mirror imparts a pattern to the light beam reflected by the mirror matrix. The term "projection system" as used herein shall be interpreted broadly to encompass any type of projection system 'including refractive, reflective, catadioptric, magnetic, electromagnetic, and electrostatic optical systems, or any combination thereof, suitable for the exposure radiation used. Or suitable for other factors such as the use of immersion liquids or the use of vacuum. Any use of the term "projection lens" herein is considered synonymous with the more general term "projection system." As depicted herein, the device is of the transmissive type (e.g., using a transmitted light hood). Alternatively, the device can be of the reflective type (e.g., using a programmable mirror array of the type mentioned above, or using a reflective mask). A slave device can be of the type having two (e.g., dual platforms) or more than two substrates and/or two or more reticle stages. In such "multi-platform j machines, additional stations may be used in parallel, or preliminary steps may be performed on one or more stations while one or more other stations are used for exposure. The lithography apparatus may also be of the following type : at least a portion of the methyl plate may be covered by a liquid having a relatively high refractive index (eg, water) to fill the space between the slave system and the substrate. The immersion liquid may also be applied to the lithography 14555]. Doc 201040669 Other spaces in the device 'eg between the reticle and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of the projection system. As used herein, the technique of "changing nothing" does not mean The structure such as the substrate must be impregnated in the liquid, but rather only means that the liquid is located between the projection system and the substrate during exposure. See Figure illuminator IL_source S0 to receive the light beam. For example, 'when the radiation source is a quasi-molecular laser', the radiation source and the lithography device can be separate entities, such as the case of the sea, and the radiation source is not considered to form part of the micro-view device and the light beam beam is A beam delivery system BD comprising, for example, a suitable guiding mirror and/or beam expander, is delivered from the radiation source s (10) to the illuminator 1L. In other cases, for example, when the Korean source is a mercury lamp, the radiation source may be micro An integral part of the shadow device. The radiation source 8 〇 and the illuminator together with the beam delivery system BD (when needed) may be referred to as a radiation system. The illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam. Typically, the intensity distribution of the adjustable illuminator has at least an outer radial extent and/or an inner radial extent in the pupil plane (which is commonly referred to as the outer and inner σ, respectively). In addition, the illuminator can include various other components. For example, the illuminator IN and the concentrator C0. The illuminator can be used to adjust the light beam to have a desired uniformity and intensity distribution in its cross section. The radiation beam B is incident on the support node. (eg, reticle stage) on the patterned device (eg, reticle), and patterned by the patterned device. After crossing the reticle, the light beam (10) passes through the projection system PL, the projection system PL focuses the beam onto the target portion of the substrate w. By means of the second positioner PW and the position sensor IF (for example, + Measurer 145551.doc 201040669 pieces, linear encoder, 2- The D encoder or the capacitive sensor), the substrate stage wt can be accurately moved, for example, to position the different target portions c in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor ( It is not explicitly depicted in Figure 1) can be used to accurately position the reticle MA, for example, after a mechanical extraction from the reticle library or during the scan relative to the path of the radiation beam B. The movement of the reticle stage MT can be achieved by means of a long stroke module (rough positioning) and a short stroke module (fine 定位 positioning) forming part of the Locator PM. Similarly, a second 形成 position can be used. Long stroke module and short stroke of one part of PW The module is used to realize the movement of the substrate table WT. In the case of a stepper (as opposed to a scanner), the mask table MT can be connected only to a short-stroke actuator, or can be fixed. A reticle pair can be used. The alignment marks M1, M2 and the substrate alignment marks ?1, p2 align the mask MA with the substrate W. Although the substrate alignment marks occupy a dedicated target portion as illustrated, they may be located in a space between the target portions ( These are referred to as scribe line alignment marks. Similarly, where more than one die is provided on the reticle 〇μα, a reticle alignment mark can be located between the dies. In at least one of the following modes: 1. In the step mode, when the entire pattern to be imparted to the radiation beam is projected onto the target portion C, the mask stage and the substrate stage are kept substantially stationary ( ; that is, a single static exposure). Next, the substrate stage WT is displaced in the X and/or γ directions so that different target portions c can be exposed. The maximum size of the exposure field in the step mode limits the size of the target portion c imaged in a single static exposure. 2. In scan mode 'synchronously scan the mask table MT and substrate when the pattern projection 145551.doc -11- 201040669 will be assigned to the radiant light east (ie, single shot 1 exposure) ). The speed and direction of the substrate stage WT relative to the mask stage τ can be determined by the magnification of the projection system PL (the reduction ratio and the image inversion characteristic. In the scan mode, the maximum size of the exposure field is limited to a single dynamic exposure. The width of the target portion (in the non-scanning direction), and the length of the scanning motion determines the height of the target portion (in the scanning direction). 3. In the other mode, 'projects the pattern of the material to be radiated to the target portion. When C is on, the reticle stage is kept substantially stationary, thereby holding the programmable patterning device' and moving or scanning the substrate table WT. In this mode, it is often used with a pulsed source, and at the substrate table WT Each of the programmable patterning devices is updated as needed after the movement or between successive pulses of radiation during the scan. This mode of operation can be readily applied to the use of programmable patterning devices (such as the types mentioned above) Maskless lithography of the face array. It is also possible to use combinations and/or variations or completely different modes of use of the modes of use described above. As shown in Figure 2, the lithography device LA forms part of a lithography unit Lc (sometimes referred to as lithography early 7G or cluster), which also includes means for performing pre- and post-exposure procedures on the substrate. Typically, such devices include deposition a spin coater SC for anti-surname layer, a developer DE for developing an exposed anti-surname agent, a cooling plate CH, and a bake plate BK. The substrate handler or the robot (10) is self-input/output port, and the substrate is purchased, The substrate is moved between the different program devices, and then the substrate is transferred to the loading tray 1b of the lithographic apparatus. These devices, which are collectively referred to collectively as coating development systems, are coated 145551.doc -12· 201040669 Under the control of the shadow system control single mcu, the coating development_control unit TCU itself is controlled by the supervisory control system scs, and the supervisory control system SCS also controls the lithography apparatus via the lithography control unit. Therefore, different devices can be operated. In order to maximize the yield and processing efficiency. In order to expose the substrate exposed by the lithography device correctly and accurately, it is necessary to detect the exposed substrate to measure the overlap between subsequent layers. Attributes of difference, line thickness, critical dimension (CD), etc. If only the error is measured, the mu) can adjust the exposure of the (four) substrate (especially when the detection can be performed quickly enough and quickly to make the same point The other substrates in the batch are still to be exposed.) Further, the exposed substrate can be peeled and reworked, for example, : 乂 improved yield or abolished 'by thereby avoiding exposure to a substrate that is known to be defective In the case where only some of the target portions of the substrate are defective, additional exposure may be performed only for the target portions that are good. The detection device is used to determine the properties of the substrate, and in particular, the different substrates or the same substrate are determined. The properties of the different layers vary from layer to layer. The detection (4) can be integrated into the lithography device LA or lithography unit Lc or can be a stand-alone device. In order to achieve the fastest measurement, it is necessary to have the detection device measure the properties in the exposed anti-surname layer immediately after exposure. However, the latent image in the anti-synthesis agent has an extremely low contrast, so that there is only a very small refractive index difference between the portion of the anti-knocking agent that has been exposed to radiation and the portion of the anti-reagent that has not been exposed to the Korean shot, t is not All detection devices are sensitive enough to measure the amount of latent image. Therefore, the measurement can be taken after the post-exposure bake step (PEB), which is usually the first step of the exposed substrate and which increases the exposed portion of the resist and Exposure contrast between sections 245551.doc 201040669. At this stage, the image in the anti-(4) can be called semi-latent.亦# Possible measurement of the developed anti-money agent image At this time, the exposed or unexposed portion of the anti-surname agent has been removed, or after the pattern transfer (four) such as money engraving (4) Measurement of images. The latter possibility limits the possibility of redoing defective substrates, but still provides useful information. Figure 3 depicts a scatterometer useful in an embodiment of the invention. The scatterometer includes a wideband (white light) light projector 2 that projects light projection onto the substrate. The inverse (four) shot is passed to the spectrometer detector 4, which measures the spectrum 10 of the specular reflection (intensity as a function of wavelength). From this data, the structure or profile of the detected spectrum can be reconstructed by the processing unit PU, for example, by tightly coupled wave analysis and nonlinear regression or by being shown at the bottom of FIG. Analog spectrum library comparison. In general, 'in order to reconstruct a structure, the general form of the structure is known, and the parameters are assumed based on the knowledge of the procedure used to make the structure, so that only a few parameters of the structure are left to be determined from the self-scattering measurement data. . The scatterometer can be grouped as a normal incidence scatterometer or an oblique incident scatterometer. Another scatterometer useful in the present invention is shown in FIG. In this device, the radiation emitted by the radiation source 2 is focused by the lens system 12 through the interference filter 13 and the polarizer 17, reflected by the partially reflective surface 16 and focused to the substrate via the microscope objective lens 15 On, the microscope is connected to the objective lens. It has a high numerical aperture (NA), for example, at least about 9 and at least about 95. Immersion scatterometers can even have lenses with numerical apertures exceeding 丨. The reflected radiation is transmitted through the partially reflective surface 16 to the detector 18 for detecting the 145551.doc -14-201040669 emission spectrum. The detector can be located in the back projection pupil plane, and the back projection pupil plane 11 is at the focal length of the lens system 15, however, the pupil plane can instead be reimaged by an auxiliary optical instrument (not shown). To the debt detector. The pupil plane defines the angle of incidence for the radial position of the radiation and the angular position defines the plane in which the azimuth of the light is located. The detector is a two-dimensional detector that allows measurement of the two-dimensional angular scatter spectrum of the substrate target 30. In one example, the anger detector 18 is a CCD or CMOS sensor array and can be used, for example, as an integration time of 4 毫秒 per frame. ❹ For example, a 'usually uses a reference beam to measure the intensity of incident radiation. To perform this process, when the radiation beam is incident on the beam splitter 16, one of the radiation beams is partially transmitted through the beam splitter as a reference beam toward the reference mirror 14. The reference beam is then projected onto different portions of the same detector ^. The set of interference filters 13 can be used to select wavelengths of interest in the range of, for example, 4 〇 5 nm to 79 奈 nm or even lower (such as about 200 nm to 300 nm). The interference filter can be tunable rather than containing a collection of different filters. A grating can be used instead of the interference filter. The detector 18 measures the intensity of the scattered light at a single wavelength (or a narrow range of wavelengths), the intensity at a plurality of wavelengths alone, or the intensity integrated over a range of wavelengths. Further, the detector can separately measure the intensity of the transversely polarized light and the transversely polarized light, and/or the phase difference between the transversely polarized light and the laterally polarized light. It is possible to use a broadband light source (i.e., a light source having a wide optical frequency or wavelength range and thus a wide color range), which gives a large light spread of 145551.doc -15· 201040669 (etendue) 'allowing multiple A mixture of wavelengths. The plurality of wavelengths in the wide frequency band each have a bandwidth of *8 and an interval of at least 2*8 (i.e., twice the bandwidth). A plurality of "sources" of radiation may be different portions of an extended source of radiation that has been split using a bundle of fibers. In this way, the angular resolution scattering spectra can be measured in parallel over multiple wavelengths. The 3-D spectrum (such as wavelength and two different angles) can be measured, which contains more information than the 2_d spectrum. This allows for more information to be measured' which increases the stability of the weights and measures. This is described in more detail in the European Patent No. 1,628,164, the entire disclosure of which is incorporated herein by reference. The target 3 on the substrate W may be a grating which is printed such that after development, the bars are formed of solid resist lines. Alternatively, the strip can be etched into the substrate. This pattern is sensitive to chromatic aberrations in the lithographic projection apparatus (especially the projection system PL), and the illumination symmetry and the presence of such aberrations will manifest themselves as a change in the printed raster. Therefore, the scatter data of the printed grating is used to reconstruct the texture grating. Depending on the printing steps and/or other scatterometry procedures, the parameters of the grating, such as line width and shape, can be input to the reconstruction process performed by the processing unit PU. In order to distinguish between two populations used in double patterning, it is necessary to introduce differences or asymmetry between the two populations. Figure 5 shows a regular pattern in which two groups are identical and form a regular pattern. However, if there is a small stack error between the second population and the first population, it is difficult to detect because the zero order diffraction pattern (used in most scattering measurement applications) does not substantially change. The intensity variation of the zero diffraction pattern is shown in FIG. As can be seen from Figure 6, the change in the diffraction pattern for a given change for a given error is smaller than 14555l.doc -16 - 201040669 (ie, the gradient around the zero stack error is negligible) However, for large stacking errors, for the same given change of the overlay error, there is a large change in the body pattern. Similarly, if the user wishes to evaluate their parameters (such as one of the groups) Bucket +"扉τ^'s critical dimension or sidewall angle)

It is difficult to distinguish between the two populations to assess their critical dimensions or sidewall angles. Figures 7a and 7b show patterns exposed in accordance with an embodiment of the present invention. Figure 7a depicts a main pattern' in which there is a single-pattern consisting of a first population A and a second population b. However, there is a small stack error OV in the placement of the second population. Figure 7b depicts the object used in the first embodiment of the invention. A first target group has been formed and then a second target group is formed. The second target group has an offset Δ relative to the first target population. Therefore, the placement deviation of the second target group with respect to the first target group is equal to the offset Δ plus the stack = error OV. It is this introduction of asymmetry that means that it is easier to determine the overlap error. The zero-order diffraction pattern is detected and the deviation from the expected diffraction pattern is used to determine the overlay error. Alternatively, i is easy to distinguish between two populations and thus measure the characteristics of the two populations, such as the critical dimension or sidewall angle of any population. The above described embodiments have been described using two groups (i.e., manufactured using the (3)^ or ^^ program), but are equally applicable to the double patterned spacer method. Figures 8a and 8b depict a double patterned spacer method in accordance with one embodiment of the present invention. In Figures 8 & a spacer 2] is used to create a space between the resists 22 and thus create a regular pattern. Figure 8b depicts the situation when the septum 21 is too small and therefore there is a stacking error of 0V between adjacent features or any parameters of any population. Thus, the method of the embodiments described above can be similarly used to determine this overlay error. Will the size of the spacer be modified by intentionally 145551.doc •17· 201040669? Deaf people are known to be biased, such as any characteristic of the size of the spacer, such as by the size of the spacer. < » 沮 但 应 应 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于 对于, ^ and about 5 nm to nano-in order to improve the error of the error, for example, each has P + there are multiple targets (the case has its own target group introduced bias). The heart has a different Figure 9 Another embodiment of the present invention is depicted. A population of hb + first population B and a large critical dimension can be introduced. This asymmetry is introduced again - the two groups are owed and thus each of the characteristics of the population is assessed despite Figure 9 depicts that having a larger critical dimension can equally well have a smaller critical freshness: a change in its (such as sidewall angle): the other characteristics of which, in fact, will affect any characteristic of the zero-order diffraction pattern. Variations in order to produce this asymmetry. The log is similar to the first embodiment, and there may be a plurality of targets each having a different critical dimension of the first target population. Figure 1 is a depiction of an embodiment in accordance with the present invention. The target population has introduced biases and the critical dimension of the first population also changes. This will again make it easier to distinguish between different populations and thus measure the overlay error and characteristics of each population. Figure 11 depicts the invention. A further embodiment, which depicts another target population, sees that every third line of the second population is lost. Again, this introduction makes it easier to distinguish the asymmetry of the two populations. As discussed above, this embodiment is about Asymmetry is introduced into the target 145551.doc -18- 201040669 group. Specific examples such as missing line, offset and critical dimension change 2 symmetry have been outlined above, but any method that introduces asymmetry will be A further example of the asymmetry between the two populations would be that the second group has a height different from the height of the first group. Alternatively, different materials can be used for different groups. Furthermore, the invention is not limited to only two groups. Use and may be equally suitably applied in the presence of three or more populations. Although reference may be made herein specifically to the fabrication of lithographic apparatus in 1C, the lithographic apparatus described herein may Other applications, such as manufacturing integrated optical systems, guidance for magnetic memory and measurement patterns, flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads, etc. It should be understood by those skilled in the art that in the context of such alternative applications, any use of the "wafer" or "die" in this document may be considered synonymous with the more general term "substrate" or "target portion". The process mentioned herein may be treated before or after exposure, for example, by applying a development system that is a tool that typically applies a resist layer to the substrate and develops the exposed resist, a metrology tool, and/or a detection tool. The substrate may be applied to §Hai et al. and other substrate processing tools when applicable. In addition, the substrate may be processed more than once, for example, to form a multi-layer IC, so that the term substrate used herein may also Reference is made to a substrate that already contains a plurality of treated layers. Although the above uses may be specifically referenced to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications (eg, embossing lithography) ), and is not limited to optical lithography when the context permits. In the embossing lithography, the configuration in the patterned device is defined on the substrate. Figure 145551.doc -19-201040669 can pattern the patterned device into the anti-surname layer of the substrate. On the substrate, the insect repellent is cured by application of electromagnetic radiation, heat, pressure, or a combination thereof. After the resist is cured, the patterned device is removed from the anti-snoring agent, leaving a pattern in it. The terms "radiation" and "beam" as used herein encompass all types of electromagnetic radiation, including ultraviolet (uv) radiation (eg, having or being about, such as nano, 355 nm, 248 nm, 193 nm, 157). Nano or 126 nm wavelength) and extreme ultraviolet (EUV) light (for example, readings in the range of 5 nm to 2 nm, ., ,, Ώ _ long), and particle beams (such as ion beam or electron beam). The term "lens", when the context permits, may refer to various types of optical components: any or a combination thereof 'including refractive, reflective, magnetic, electromagnetic, and electro-optical components." Although specific embodiments of the invention have been described above, It is understood that the invention may be practiced in other ways than described. For example, 5, the present invention can take the form of a computer program containing one or more sequences describing the machine singularity of the method as disclosed above; or data, storage media (eg, conductor memory, A disk or a disc) having the computer program stored therein. Conclusion It should be understood that the '[Embodiment] section, not the [Summary of the Invention] and the [Chinese Abstracts] section are intended to explain the scope of the patent application. SUMMARY OF THE INVENTION The present invention is capable of limiting the present invention in any manner, 145551.doc -20-201040669, as contemplated by the inventors. And the scope of additional patent applications. The invention has been described above by means of a functional storage block that illustrates the implementation of the force and its relationship. For ease of description, this article has arbitrarily defined this

Wait for the boundary of this storage block. 〇 ^ l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l特定 Before the specific implementation, the present invention is so fully demonstrated that other people can easily modify and/or modify for various applications by applying the well-known knowledge in the art without undue experimentation. These particular embodiments are adapted without departing from the general inventive concept. Therefore, the scope and scope of equivalents of the disclosed embodiments are intended to be within the scope of the invention. It should be understood that the phrase "here" is used to describe the term "beta" as explained in the specification and guidance. The breadth and scope of the invention should not be limited by the above-described exemplary embodiments, but only by the following patent scope and equivalents thereof. FIG. a lithography apparatus according to an embodiment of the invention; a lithography unit or cluster according to an embodiment of the invention; a first scatterometer according to the invention - an embodiment; Second scatterometer of the example; exposed two: according to the invention - the use of the double patterning technique of the embodiment: according to the embodiment of the invention, the strength of the % zero-order diffraction pattern 145551.doc -21 - 201040669 how the graph changes with the error of the stack;

Figure 7a depicts a pattern in which a stacking error exists between first-complexes in accordance with an embodiment of the present invention; Figure 7b depicts a stage in accordance with the present invention depicting stages and gains in accordance with the present invention. a pattern; a target population at which the first target population and the first and the overlay errors are located; one of the embodiments in the spacer patterning technique is depicted in accordance with the present invention - an embodiment of the use The spacer patterning technique is used to create the stage in the target and the resulting target; FIG. 9 is a target made in accordance with an embodiment of the present invention; FIG. 10 depicts another object in accordance with an embodiment of the present invention; and FIG. A target in accordance with an embodiment of the present invention. The features and advantages of the present invention will become more apparent from the aspects of the embodiments described in the appended claims. In the drawings, like reference numerals generally refer to the same, the same, and/or structurally similar elements. The first appearance of the component is indicated by the leftmost digit of the corresponding reference number. [Main component symbol description] 2 Broadband (white light) radiation projector / radiation source 4 Spectrometer detector 10 Spectrum 11 Back projection diaphragm plane 12 Lens system 13 Interference filter 145551.doc -22- 201040669

14 Reference Mirror 15 Microscope Objectives 16 Partially Reflective Surface / Beam Splitter 17 Polarization 18 Detector 21 Septum 22 Anti-Surmitant 30 Substrate Target A First Group AD Regulator B Radiation Beam (Figure 1) / Second Population ( Figure 5) BD Beam Transfer System BK Baking Plate C Target Part CH Cooling Plate CO Concentrator DE Developer 1/01 Input/Output Port 1/02 Input/Output Port IF Position Sensor IL Lighting System / Illuminator IN Accumulator LA lithography device LACU lithography control unit 145551.doc -23- 201040669

LB LC Ml M2 MA MT PI P2 PL PM PU PW RO SC SCS SO TCU W WT Loading plate lithography unit reticle alignment mark reticle alignment mark patterning device / reticle support structure / reticle stage alignment mark Substrate alignment mark projection system first positioner processing unit second positioner robot spin coater supervision control system radiation source coating development system control unit substrate substrate table 145551.doc -24-

Claims (1)

201040669 VII. Patent application scope: 1. A method for determining a characteristic of a first body or a second group on a substrate, the first group being nominally the same as the music group and on the substrate Forming in a single layer - a single pattern having a period of time specific to the distance between the feature of the first group and the closest feature of the second group, the method comprising: forming a first on the substrate a group comprising a first target group; Ο 形成 forming a second group on the substrate, the second group comprising a second target group, the second target group being fish, ° The first target group of the Hai formation forms a combined target group, the light shot reflected from the combined target group is measured; and the first group or the second group is calculated using the light reflection reflected from the combined target group One characteristic, wherein the second target group has an asymmetry with respect to one of the first target groups. 2. The method of claimants wherein the asymmetry comprises: the distance between the feature of the first target group and the closest feature of the second target group is the period minus an offset. 3. The method of claim 1 or 2 wherein the asymmetry comprises: the features of the second target population having a critical dimension different from a critical dimension of the first __ target population. 4. The method of claim 1 or 2, wherein the asymmetry comprises: the first target group or the second target group is such that every 11 features are removed, η is greater 145551.doc 201040669 at 1 - a limited number. 5. The method of claim 3, wherein the asymmetry further comprises: the first target population or the first: target population is such that every n features are removed, and η is a finite number greater than one. 6. The method of claim 1 'the pot in the pot 哕 吣 吣 斗 斗 斗 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 7. As in the method of claim 1, the error in 1 is satisfied. Τ ° 特性 特性 特性 该 该 · · · · · · · 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. 9. ... with the first group of β Hai contains the - _ target group, and the second group contains a first target group of the first gas tn brother, the first second target group m relative to the second second – the offset is different from the bias of the target group of the first – target group. The younger – 10 • The method of claim 3, where the τ shoulder-group contains – μ the target group, and the whistle- a younger brother and a β hai _ group containing m the second second target group relative to the second group, the critical size is different from the first _ target group of 4 brothers and one target group relative to the first The critical dimension of a target group. The method of claim 1, wherein the asymmetry of the 哕八甲名 includes: having a height different from the height of the first group - w-group 12. The method of claim 1, wherein The asymmetry of the hay includes, the flute is made of a material different from the material of the first group: the first group 145551.doc 201040669 13. 14. The method of claim 1, wherein the step of forming the first plate And a step of processing the substrate, comprising the method of claim 1, wherein the step of forming the first plate and the step of freezing the substrate comprises: exposing one of the substrates The second step: the body comprises exposing the group and forming the second group. The fresh body comprises exposing the group and forming the second group 15 · The method of seeking the item 1 The group occurs simultaneously. Forming the first population and forming the 16th method, comprising: generating a first population target population on a substrate; the first population comprising a first population comprising a first generation on the substrate a second group, the first target group; one of the target groups is generated by the group to include the first target group and the second target group; the light is reflected from the combined target group; and the use is separately from the first target The radiation reflected by the second target population of the group determines the characteristics of the first population or the second population, wherein the first population is substantially identical to the second population and is mono- on the substrate Forming a single pattern within the layer' the single pattern having a period equal to the distance between one of the features of the first population and the closest feature of the second population, and wherein the second target population has a phase oblique to the first One of the target groups is asymmetrical. H5551.doc 201040669 Between the first and the target 17_ as in the method of claim 16, the characteristic of the group and the first distance. Wherein the sax asymmetry comprises: the second target group is the closest to the method of claim 16, wherein the asymmetry comprises: the second target group has a feature different from the first target group One: a critical dimension. The method of claim 16, wherein the asymmetry comprises: the first target population or the second target population causes each _ feature to be removed, and η is a finite number greater than one. 2. The method of claim 18, wherein the asymmetry further comprises: the first item I group or the seventh second target group such that every n features are removed, and η is a finite number greater than one. The method of claim 16, wherein the characteristic is a critical size of the first group or the second group. The monthly length term I6; ξτ method, wherein the characteristic is an error of the placement of the second group. 23. The method of claim 16, wherein the characteristic is a sidewall angle of the first population or the second population. The method of claim 17, wherein: the first group includes a second party of the first target group; the second group includes a second one of the second target group; and 4 the first target group The offset of the second one relative to the second one of the first target group is different from the first one of the second target group relative to the first one of the first target groups. The method of claim 18, wherein: the first group comprises a second one of the first target groups. The second group comprises a second one of the second target groups. and the first a second dimension of the second target group relative to the first one of the second target group is different from the first one of the second target group relative to the first one of the first target group A method of claim 16, wherein the method of claim 16 wherein the asymmetry is white. υ 3. The second group 〇 has a height different from one of the first groups. 27. The method of claim 16, wherein The asymmetry comprises: the second group system being configured by a material different from the material of one of the first groups. The method of claim 16, wherein: forming the first population comprises: exposing the substrate, processing the substrate; and forming the second population comprises: exposing the processed substrate. 2. The method of claim 16, wherein forming the first population comprises: exposing the substrate, and bed bonding the substrate; and forming the second population comprises: exposing the substrate. Forming the first population and forming the second 30. The method of claim 16, wherein the population occurs substantially simultaneously 145551.doc