CN101320206A - Overlapping mark and uses thereof - Google Patents
Overlapping mark and uses thereof Download PDFInfo
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- CN101320206A CN101320206A CNA2007101089667A CN200710108966A CN101320206A CN 101320206 A CN101320206 A CN 101320206A CN A2007101089667 A CNA2007101089667 A CN A2007101089667A CN 200710108966 A CN200710108966 A CN 200710108966A CN 101320206 A CN101320206 A CN 101320206A
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Abstract
The invention relates to an overlapping mark, which is used for examining the registration precision between a lower wafer layer, which is defined by double exposure steps, and the photo-etching making technology for defining an upper wafer layer. The overlapping mark comprises a part of the lower wafer layer and a photoresist pattern; wherein, the former comprises two first X-direction flagpole patterns, two first Y-direction flagpole patterns, two second X-direction flagpole patterns and two Y-direction flagpole patterns; the first X-direction and the first Y-direction flagpole patterns are defined by the first exposure step, and a first rectangle is also defined; the second X-direction and the second Y flagpole patterns are defined by the other exposure step, and a second rectangle is defined, the X-direction width of the second rectangle is larger than that of the first rectangle and the Y-direction width of the second rectangle is smaller than that of the first rectangle. The photoresist pattern is positioned above the part of the lower wafer layer and is surrounded by the flagpole patterns, and is formed by the photo-etching making technology.
Description
Technical field
The invention relates to the used overlapping mark of a kind of IC manufacture craft (overlay mark), particularly about can be in order to checking the overlapping mark of going up the Aligning degree (alignmentaccuracy) between the photoetching making technology (lithography process) of wafer layer (upper layer) with the following wafer layer (lower layer) of two exposure steps definition and definition, with and application in the Aligning degree inspection.
Background technology
Along with the live width of IC manufacture craft continues to dwindle, the control of the critical size of element (CD:criticaldimension) is important further.When manufacture craft must form 2 different whens zone of pattern arrangement kenel on a wafer layer, often must carry out the different double exposure of conditions of exposure, so that each zone all has predetermined critical size to the photoresist layer in two zones.On the other hand, the spacing (pitch) of the pattern that forms when desire also can utilize double exposure to reach during less than the resolution of single exposure.
For check a wafer layer by the Aligning degree between double exposure defined two parts pattern and follow-up another wafer layer, prior art can form overlapping mark before described another wafer layer is patterned, its typical manufacture craft is as described below.
Please refer to Fig. 1, when using a mask that crystalline substance side (die) district is done to expose for the first time, under the part in amorphous side district, form two Y simultaneously in the positive photoresist layer on the wafer layer 100 102 to strip exposure region 102a.When then using another mask to do to expose for the second time, in positive photoresist layer 102, form two X simultaneously to strip exposure region 102b.For simplicity, mask among this figure, crystalline substance side district, amorphous Fang Qu and go up wafer layer and all omit and do not draw.
Exposure region during photoresist among each exposure region 102a, 102b can be when follow-up develop be distinguished with crystalline substance side is removed simultaneously, so in follow-up etching process, have two Y and be formed on down in the described part of wafer layer 100 to irrigation canals and ditches 104b to irrigation canals and ditches 104a and two X in order to the following wafer layer pattern that forms crystalline substance side district.Follow-up after last wafer layer forms, with a photoetching making technology form simultaneously crystalline substance side district the photoresist pattern and as two X of an overlapping mark part to and two Y to strip photoresist figure 106.
Measure center line and two Ys the distance to the center line of irrigation canals and ditches 104a between of two Y, can learn the directions X Aligning degree between the pattern that the described photoetching making technology and the first time, exposure defined to strip photoresist figure 106.Measure center line and two Xs the distance to irrigation canals and ditches 104b center line between of two X, can learn the Y direction Aligning degree between the pattern that the described photoetching making technology and the second time, exposure defined to strip photoresist figure 106.Yet, under this situation and can't try to achieve Y direction Aligning degree between the pattern of described photoetching making technology and exposure definition for the first time, with and and the pattern that defines of exposure for the second time between the directions X Aligning degree.Therefore, the effect of this overlapping mark on Aligning degree is checked is also imperfect.
In addition, if above-mentioned 4 irrigation canals and ditches are (or for the second time) definition when exposing all for the first time, though the Aligning degree of pattern on X and Y two directions of then described photoetching making technology (or for the second time) exposure definition with for the first time all can be estimated, and the Aligning degree between the pattern of (or for the first time) exposure definition for the second time can't be estimated fully.For the pattern of estimating first and second time exposure definition simultaneously separately with the Aligning degree of described photoetching making technology on X and Y two directions, can when exposing for the first time, define above-mentioned 4 irrigation canals and ditches, and form above-mentioned 4 irrigation canals and ditches when exposing for the second time under another part in the wafer layer, but overlapping mark like this can take the area of twice.
Moreover, no matter adopting above-mentioned any overlapping mark, directions X or Y direction Aligning degree between the following wafer layer pattern of the following wafer layer pattern of exposure definition for the first time and exposure definition for the second time all can't be got by its estimation.
Summary of the invention
The invention provides a kind of overlapping mark, in order to check by the defined wafer layer once of two exposure steps and in order to the Aligning degree between the photoetching making technology that defines wafer layer on.
The present invention also provides a kind of method of checking Aligning degree, and it forms above-mentioned overlapping mark, to check by the double exposure defined wafer layer once of manufacture craft with in order to the Aligning degree between the photoetching making technology that defines wafer layer on.
Be that adjective hereinafter " first ", " second " just are used for distinguishing different objects or manufacture craft/step sometimes, might not be to be used for representing its use or the sequencing that carries out what this should be specified.For example, first step of exposure may be carried out before second step of exposure, also may carry out after it.
The part of wafer layer and the photoresist pattern of top thereof under overlapping mark of the present invention comprises.The described part of following wafer layer comprise 2 the one X to, 2 the one Y to, 2 the 2nd X to and 2 the 2nd Y to flagpole pattern.The one X is defined by first step of exposure to flagpole pattern, and defines first rectangle to, Y.The 2nd X is defined by second step of exposure to flagpole pattern to, Y, and defines second rectangle, and its X is to dimension D
2XGreater than the X of first rectangle to dimension D
1X, but Y is to dimension D
2YLess than the Y of first rectangle to dimension D
1YAforementioned photoresist pattern is positioned at the described part top of following wafer layer and is centered on by aforementioned flagpole pattern, and is scribed by aforementioned lights and to make technology and form.Instantly between wafer layer and photoetching making technology fully on time, 2 the one X to the center line of flagpole pattern and 2 the one Y to the intersection point of the center line of flagpole pattern, 2 the 2nd X to the center line of flagpole pattern and 2 the 2nd Y intersection point to the center line of flagpole pattern, and the central point three of photoresist pattern overlaps.
In one embodiment, above-mentioned D
1X, D
1Y, D
2X, D
2YBetween the pass be D
1X=D
2Y＜D
2X=D
1Y
In one embodiment, each X is different to flagpole pattern with each the 2nd X to the width of flagpole pattern, and each Y is different to flagpole pattern with each the 2nd Y to the width of flagpole pattern.
In one embodiment, above-mentioned 2 the one X are to linking to each other in twos to flagpole pattern with 2 the one Y, and 2 the 2nd X are to linking to each other in twos to flagpole pattern with 2 the 2nd Y.In another embodiment, 2 the one X are not to linking to each other mutually to flagpole pattern with 2 the one Y, and 2 the 2nd X are to not linking to each other mutually to flagpole pattern with 2 the 2nd Y.
In one embodiment, above-mentioned photoresist pattern comprises a Filled Rectangle photoresist figure.In another embodiment, above-mentioned photoresist pattern comprises two X to reaching two Y to strip photoresist figure, and it defines the 3rd rectangle.
In one embodiment, the flagpole pattern of the described part of following wafer layer is all line graph, or is all the irrigation canals and ditches in the described part that is formed on down wafer layer.
In one embodiment, above-mentioned the one the second step of exposure belong to photoetching making technology, and form a dual exposure (double exposure) manufacture craft.In another embodiment, described two step of exposure belong to twice photoetching making technology respectively, and define different photoresist layers.
In one embodiment, above-mentioned the one the second step of exposure have one to use X-dipole (X-dipole) off-axis (off-axis) light source in the two, and another person uses Y-dipole off-axis light source.In another embodiment, in order to define a plurality of figures of spacing (pitch) less than its resolution separately in the wafer layer down, it for example is multiple bar chart shape or many irrigation canals and ditches to above-mentioned the one the second step of exposure jointly.
In another embodiment, above-mentioned the one the second step of exposure are jointly in order to many parallel wires of definition spacing less than its resolution separately, and a plurality of contact mats that are connected these wire ends, wherein first and two step of exposure definitional part lead and part contact mat separately.Each contact mat links to each other with a lead, and the former width is greater than the latter's width.Stagger in the two adjacent positions of pad on the bearing of trend of above-mentioned lead of touching that are connected with two adjacent leads respectively, make this two adjacent touch the pad unlikely overlapping.
The method of inspection Aligning degree of the present invention comprises: form aforesaid overlapping mark, determine a plurality of location parameters of aforementioned photoresist pattern again with respect to each flagpole pattern of the described part of following wafer layer, estimating following wafer layer pattern and the directions X between the photoetching making technology and the Y direction Aligning degree of first step of exposure definition, and in this at least one of the following wafer layer pattern that defines of second step of exposure and the directions X between the photoetching making technology and Y direction Aligning degree.The step that forms overlapping mark comprises: under definition during wafer layer, in the part of following wafer layer, form by aforementioned 2 the one X of first step of exposure definition to and 2 the one Y to flagpole pattern, and by aforementioned 2 the 2nd X of second step of exposure definition to and 2 the 2nd Y to flagpole pattern; And when carrying out photoetching making technology, above the described part of descending wafer layer, form aforementioned photoresist pattern.
The method of above-mentioned inspection Aligning degree also can comprise: determine an X to flagpole pattern with respect to the 2nd X to a location parameter of flagpole pattern and a Y to flagpole pattern with respect to the location parameter of the 2nd Y to flagpole pattern, Y direction and directions X Aligning degree between the following wafer layer pattern that defines with the following wafer layer pattern and second step of exposure of estimating the definition of first step of exposure.
In addition, when aforementioned photoresist pattern comprised a Filled Rectangle photoresist figure, the method for above-mentioned inspection Aligning degree can determine a plurality of location parameters of four limits of this rectangle photoetching glue pattern with respect to each flagpole pattern of the described part of following wafer layer.When aforementioned photoresist pattern comprise two X that define the 3rd rectangle to and two Y during to strip photoresist figure, the method for above-mentioned inspection Aligning degree can determine this two X to and two Y to a plurality of location parameters of strip photoresist figure with respect to above-mentioned each flagpole pattern.
Utilize the overlapping mark of the invention described above, can check under the part of first step of exposure definition wafer layer and the defined Aligning degree of wafer layer on X and Y two directions of going up of photoetching making technology afterwards, and check wafer layer and the Aligning degree of last wafer layer on X and Y two directions under another part of second step of exposure definition, directions X and Y direction Aligning degree between the following wafer layer pattern that can also check first step of exposure definition and the following wafer layer pattern of second step of exposure definition, and more complete Aligning degree inspection effect can be provided.
Description of drawings
Fig. 1 illustrates the manufacture method of existing a kind of overlapping mark.
Fig. 2～Fig. 4 illustrates 3 embodiment of overlapping mark of the present invention.
Fig. 5 A～Fig. 5 C illustrates the example of method for making of the overlapping mark of Fig. 2, and wherein each flagpole pattern all is formed in down the irrigation canals and ditches in the wafer layer.
Fig. 6 A illustrates and is suitable for overlapping mark of the present invention on the manufacture craft, and be fit to an expose example of the pattern that defines of X dipole, Y dipole off-axis light source, Fig. 6 B and Fig. 6 C illustrate corresponding X dipole off-axis light source the expose mask pattern of usefulness of the mask pattern of usefulness and Y dipole off-axis light source that exposes respectively.
Fig. 7 A～Fig. 7 C illustrates suitable overlapping mark of the present invention, utilizes the double-exposure step to define the example of spacing less than the manufacture craft of a plurality of figures of double-exposure step resolution separately, and a plurality of figures wherein are many irrigation canals and ditches.
Fig. 8 A～Fig. 8 C illustrates suitable overlapping mark of the present invention, utilizes the double-exposure step to define spacing another example less than the manufacture craft of a plurality of figures of double-exposure step resolution separately, and a plurality of figures wherein are multiple bar chart shape.
Fig. 9 A illustrates on the manufacture craft and to be suitable for overlapping mark of the present invention, and is fit to another example of the pattern that defines with two exposure steps, and Fig. 9 B and Fig. 9 C illustrate the used mask pattern of described two exposure steps respectively.
Drawing reference numeral:
10,20:X dipole off-axis light source, Y dipole off-axis light source
12,22: the luminous zone
50,54,58,90,91: mask
52,56,59,62,64,66,68,92,94,96,97,98: the pattern on the mask
99: auxiliary pattern
100,200: the following wafer layer of part
102,502: positive photoresist layer
102a, 102b:Y to, X to the strip exposure region
104a, 104b:Y to, X to irrigation canals and ditches
106:X is to reaching Y to strip photoresist figure
202,204: the first rectangles, second rectangle
202a, 202b: an X to flagpole pattern, a Y to flagpole pattern
204a, 204b: the 2nd X to flagpole pattern, the 2nd Y to flagpole pattern
206: the photoresist pattern
502a, 502b: square ring-type exposure region
600: wire pattern
602,604: the different piece of wire pattern 600
700,800: substrate
710,810: following wafer layer
712: the irrigation canals and ditches in the following wafer layer
720,820:(first) curtain layer of hard hood
722,724: the irrigation canals and ditches pattern in the curtain layer of hard hood
730/840,740/850: first, second photoresist layer
732,742: the irrigation canals and ditches pattern in first, second photoresist layer
810a: line graph
820a: first curtain layer of hard hood of patterning
830: the second curtain layer of hard hood
900: lead adds the pattern of contact mat
902a/b, 906: lead
904a/b: contact mat
D
1X, D
1Y, D
2X, D
2Y: size
P1, p2, p2 ', p2 ": spacing
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Fig. 2～Fig. 4 illustrates 3 embodiment of overlapping mark of the present invention.This overlapping mark is in order to check by the one the second defined wafer layers once of step of exposure and in order to the Aligning degree between the photoetching making technology that defines wafer layer on.
Please refer to Fig. 2, this overlapping mark comprises the down part of wafer layer, and is positioned at the photoresist pattern 206 on the last wafer layer (not illustrating) on the described part of wafer layer down.The described part of following wafer layer comprise 2 the one X to flagpole pattern 202a, 2 the one Y to flagpole pattern 202b, 2 the 2nd X to flagpole pattern 204a and 2 the 2nd Y to flagpole pattern 204b.Wherein, an X is defined by first step of exposure to flagpole pattern 202b to a flagpole pattern 202a and a Y, and defines first rectangle 202.The 2nd X is defined by second step of exposure to flagpole pattern 204b to flagpole pattern 204a and the 2nd Y, and defines second rectangle 204, and its X is to dimension D
2XGreater than the X of first rectangle 202 to dimension D
1X, but Y is to dimension D
2YLess than the latter's Y to dimension D
1Y
Above D
1X, D
1Y, D
2X, D
2YRelation between four values for example is D
1X=D
2Y＜D
2X=D
1YIn addition, the one X is different to flagpole pattern 204a with the 2nd X to the width of flagpole pattern 202a, a Y also can to flagpole pattern 204b is different to the width of flagpole pattern 202b and the 2nd Y, cause so helps difference 202a and 204a when checking Aligning degree, and difference 202b and 204b.
Moreover aforementioned flagpole pattern 202a, 202b, 204a and 204b for example are formed in down the irrigation canals and ditches in the described part of wafer layer, or constitute the line graph of the described part of wafer layer down.Instantly wafer layer is dielectric layer and flagpole pattern 202a, 202b, 204a and 204b when being formed in down irrigation canals and ditches in the described part of wafer layer, and last wafer layer for example is a conductive layer, and the variation that this moment, each irrigation canals and ditches position can light reflectivity is measured.Instantly wafer layer be conductive layer and flagpole pattern 202a, 202b, 204a, when 204b is all line graph, last wafer layer for example is a dielectric layer, this moment each line graph the position can also light reflectivity variation measure.
In addition, in the present embodiment, an X to flagpole pattern 202a and a Y to flagpole pattern 202b link to each other in twos, the 2nd X links to each other to flagpole pattern 204b with the 2nd Y in twos to flagpole pattern 204a, and photoresist pattern 206 comprises a Filled Rectangle photoresist figure.Y direction Aligning degree between can first step of exposure defined wafer layer pattern down of the application of this overlapping mark and the photoetching making technology is estimated as example, its method for example is following person: at first measure up and down two sidelines separately the position of two the one X to flagpole pattern 202a and photoresist pattern 206 with optical mode (for example being the variation of detection of reflected light intensity), calculate two the one X more in view of the above to the position of the center line of flagpole pattern 202a and the position of photoresist pattern center line in two sidelines about in the of 206, the difference of this two position is the value of desire estimation.
In addition, defined directions X and the Y direction Aligning degree between the wafer layer pattern down of the defined wafer layer pattern down of first step of exposure and second step of exposure can also be estimated by this overlapping mark.With Y direction Aligning degree is example, its evaluation method for example is following person: at first measure two the one X to flagpole pattern 202a and two the 2nd X to flagpole pattern 204a position separately, calculate in view of the above again two the one X to the position of the center line of flagpole pattern 202a and two the 2nd X to the position of the center line of flagpole pattern 204a, the difference of this two position is the value of desire estimation.
In other embodiments, the flagpole pattern 202a that is defined does not simultaneously link to each other mutually with 202b and the flagpole pattern 204a that is defined simultaneously and 204b do not link to each other mutually also can, as shown in Figure 3.In addition, photoresist pattern 206 can change into and comprise that two X that define the 3rd rectangle are to reaching two Y to strip photoresist figure, as shown in Figure 4.
When photoresist pattern 206 comprises that two X are when reaching two Y to strip photoresist figure, with the Y direction Aligning degree between defined wafer layer pattern down of first step of exposure and the photoetching making technology is example, the for example following person of its evaluation method: at first with optical mode measure two the one X to flagpole pattern 202a and two X to strip photoresist figure position separately, calculate in view of the above again two the one X to the position of the center line of flagpole pattern 202a and two X to the position of the center line of strip photoresist figure, the difference of this two position is the value of desire estimation.
Fig. 5 A～Fig. 5 C illustrates the example of method for making of the overlapping mark of Fig. 2, and wherein each flagpole pattern all is formed in down the irrigation canals and ditches in the wafer layer, and second step of exposure was carried out before first step of exposure.Please refer to Fig. 5 A, be formed with positive photoresist layer 502 on the following wafer layer 200.Please be simultaneously with reference to Fig. 5 A and Fig. 2, remove on second mask 50 that second step of exposure is used and have the pattern of distinguishing corresponding crystalline substance side (not illustrating), in addition counterpart amorphous side district in order to define the 2nd X to flagpole pattern 204a and the 2nd Y irrigation canals and ditches pattern 52 to flagpole pattern 204b.Therefore, second step of exposure also can form the square ring-type exposure region 502a of corresponding flagpole pattern 204a and 204b in the positive photoresist layer 502 in part amorphous side district except predetermined pattern being transferred to crystalline substance side district (not illustrating).
Please be simultaneously with reference to Fig. 5 B and Fig. 2, on employed first mask 54 of first step of exposure except that pattern (not illustrating) with corresponding crystalline substance side district, also have corresponding described part amorphous side district in order to define an X to flagpole pattern 202a and a Y irrigation canals and ditches pattern 56 to flagpole pattern 202b.Therefore, first step of exposure also can form the square ring-type exposure region 502b of corresponding flagpole pattern 202a and 202b in positive photoresist layer 502 except predetermined pattern being transferred to crystalline substance side district (not illustrating).
Photoresist material among square ring-type exposure region 502a and the 502b can be in follow-up development manufacture craft with crystalline substance side district in exposure region be removed simultaneously, therefore in thereafter in order to the etching process that forms the following wafer layer pattern of distinguishing crystalline substance side, under the part that two corresponding square ring-type irrigation canals and ditches 202,204 can be formed in the amorphous side district in the wafer layer 200, shown in Fig. 5 C.
Please refer to Fig. 5 C, after then wafer layer (not illustrating) forms on one, use mask 58 to carry out a photoetching making technology, desire to transfer to the pattern (not illustrating) of the last wafer layer of distinguishing crystalline substance side except that having on this mask 58, also have the pattern 59 in order to definition photoresist pattern 206 in corresponding described part amorphous side district.Therefore, described photoetching making technology is except that transferring to predetermined pattern in crystalline substance side district, also can form photoresist pattern 206 above the described part of following wafer layer 200, it is centered on by square ring-type irrigation canals and ditches 202,204 (flagpole pattern 202a, the 202b of irrigation canals and ditches kenel, 204a, 204b).
In addition, Fig. 3 and overlapping mark shown in Figure 4 can also form by said method, as long as make the shape of pattern 52/56 or pattern 59 into corresponding person.In addition, if aforementioned wafer layer down changes negative photoresist layer into and defines, and the pattern 56 and 52 in order to the formation overlapping mark on first mask 54 and second mask 50 is constant, then formed flagpole pattern 202a/b and 204a/b are all line graph, and it has constituted the described part as the following wafer layer of the part of overlapping mark.
Moreover, the patterning manufacture craft of the same wafer layer once that comprises two exposure steps of suitable overlapping mark of the present invention, its two exposure steps for example is to belong to photoetching making technology; Or belong to twice photoetching making technology respectively, and to different photoresist layer exposures.When the double-exposure step belonged to photoetching making technology, this two step of exposure was promptly formed so-called double exposure manufacture craft.
Fig. 6 A illustrates and is suitable for overlapping mark of the present invention on the manufacture craft, and be fit to carry out with X dipole, Y dipole off-axis light source an example of the pattern that the double exposure manufacture craft defines, Fig. 6 B and Fig. 6 C illustrate corresponding X dipole off-axis light source the expose mask pattern of usefulness of the mask pattern of usefulness and Y dipole off-axis light source that exposes respectively.Please refer to Fig. 6 A, the pattern that this example is lifted comprises the accurately control of directions X size for being found in the wire pattern 600 in DRAM (Dynamic Random Access Memory) (DRAM) element, so preferable part wire pattern 604 with the definition of X dipole off-axis light source; And comprise the accurately control of Y direction size, and preferable another part wire pattern 602 with the definition of Y dipole off-axis light source.Corresponding last wafer layer is the dielectric layer of covering wire pattern 600 in this example, and the pattern of last wafer layer then is the pattern of contact window, and the photoetching making technology that comprises described double exposure manufacture craft is to use positive photoetching rubber.
Please refer to Fig. 6 B, it is symcenter and two luminous zones 12 of arranging on directions X that X dipole off-axis light source 10 has with the axle center, have the pattern 62 of corresponding described part wire pattern 604 on its corresponding mask, and the predetermined blocky 64 that forms the zone that covers described another part wire pattern 602.Please refer to Fig. 6 C, Y dipole off-axis light source 20 is symcenter and two luminous zones 22 of arranging on the Y direction with having with the axle center, have the pattern 66 of corresponding described another part wire pattern 602 on its corresponding mask, and cover the described part wire pattern 604 predetermined blockies 68 that form the zone.This two mask is respectively applied in the one the second step of exposure, and in the zone in its corresponding amorphous side district, is formed with the pattern (not illustrating) of wafer layer under the part of an aforementioned part that belongs to overlapping mark in order to definition, for example is Fig. 5 A, 5B those shown.In addition, the use of this two mask order and unrestricted.
Fig. 7 A～Fig. 7 C illustrates suitable overlapping mark of the present invention, utilizes the double-exposure step to define the example of spacing less than the manufacture craft of a plurality of figures of double-exposure step resolution separately.Two exposure steps adheres to twice photoetching making technology separately in this example, and to different photoresist layer exposures, and a plurality of figures of desire definition are the irrigation canals and ditches that are formed on down in the wafer layer.
Please refer to Fig. 7 A, after wafer layer 710 is formed in the substrate 700 with curtain layer of hard hood 720 down, contain first step of exposure in the first interior photoetching making technology, the patterning photoresist layer 730 that has irrigation canals and ditches pattern 732 with formation, wherein neighbouring trenches pattern 732 be spaced apart p1, its value can the person of reaching for two exposure steps resolution separately.Serve as cover curtain etching curtain layer of hard hood 720 with photoresist layer 730 then, to form the irrigation canals and ditches pattern 722 that is spaced apart p1 therein.
Please refer to Fig. 7 B, after removing photoresist layer 730, contain second step of exposure in the second interior photoetching making technology, has the patterning photoresist layer 740 of the irrigation canals and ditches pattern 742 of p1 at interval with formation, wherein 722 in the irrigation canals and ditches pattern in an irrigation canals and ditches pattern 742 and the curtain layer of hard hood 720 that is adjacent is spaced apart p2, its value is half of p1, but two exposure steps resolution separately can't the person of reaching.
Please refer to Fig. 7 C, serves as a cover curtain etching curtain layer of hard hood 720 with photoresist layer 740 then, to form irrigation canals and ditches pattern 724 therein, wherein is spaced apart p2 between an irrigation canals and ditches pattern 724 and the irrigation canals and ditches pattern 722 that is adjacent.After waiting to remove photoresist layer 740, the curtain layer of hard hood 720 with tool irrigation canals and ditches pattern 722 and 724 is a wafer layer 710 under the etching of cover curtain again, is spaced apart many irrigation canals and ditches 712 of p2 with formation.
Fig. 8 A～Fig. 8 C illustrates suitable overlapping mark of the present invention, utilize the double-exposure step to define spacing another example less than the manufacture craft of a plurality of figures of double-exposure step resolution separately, wherein two exposure steps adheres to twice photoetching making technology separately, and to different photoresist layer exposures, and a plurality of figures of desire definition are all line graph.
Please refer to Fig. 8 A, after wafer layer 810, first curtain layer of hard hood 820 and second curtain layer of hard hood 830 are formed in the substrate 800 in regular turn down, contain first step of exposure in the first interior photoetching making technology, to form the patterning photoresist layer 840 of tool multiple bar chart shape, wherein the adjacent lines figure be spaced apart p1, it can the person of reaching for two exposure steps resolution separately.Serve as cover curtain etching second curtain layer of hard hood 830 with photoresist layer 840 then, to form corresponding multiple bar chart shape.
Please refer to Fig. 8 B, after removing photoresist layer 840, contain second step of exposure in the second interior photoetching making technology, to form the patterning photoresist layer 850 of tool multiple bar chart shape, wherein be spaced apart p2 between the line graph of a line graph and second curtain layer of hard hood 830 that is adjacent, its value is half of p1, but two exposure steps resolution institute separately can't the person of reaching.Then second curtain layer of hard hood 830 with patterning photoresist layer 850 and patterning is cover curtain etching first curtain layer of hard hood 820, and to get the first curtain layer of hard hood 820a of patterning, it comprises the multiple bar chart shape that is spaced apart p2.
Please refer to Fig. 8 C, serves as wafer layer 810 under the etching of cover curtain with the first curtain layer of hard hood 820a, second curtain layer of hard hood 830 and the photoresist layer 850 that all passes through patterning then, and it is defined as multiple bar chart shape 810a, it is spaced apart p2.
In two examples shown in Fig. 7 A～Fig. 7 C and Fig. 8 A～Fig. 8 C, the one the second step of exposure two masks that use respectively in the zone in its corresponding amorphous side district, be formed with the pattern of wafer layer under the part of an aforementioned part that belongs to overlapping mark in order to definition, it for example is Fig. 5 A, Fig. 5 B those shown.In addition, the use of this two mask order and unrestricted.
If the above-mentioned location that belongs to second step of exposure of the second photoetching making technology produces skew, situation shown in dotted line has two kinds of p2 ' and p2 at interval between then formed many irrigation canals and ditches 712 or the multiple bar chart shape 810a ", shown in Fig. 7 C or Fig. 8 C.The variation of overlapping mark of the present invention when this kind skew produces illustrates as follows: please refer to Fig. 2, first rectangle 202, second step of exposure that define overlapping mark when aforementioned first step of exposure define second rectangle 204, and above-mentioned offset direction is-during directions X, second rectangle 204 promptly can be towards the same distance of-directions X skew, thereby reflects the locating bias degree of second step of exposure.
Fig. 9 A illustrates on the manufacture craft and to be suitable for overlapping mark of the present invention, and is fit to another example of the pattern that defines with two exposure steps, and Fig. 9 B and Fig. 9 C illustrate the used mask pattern of two exposure steps respectively.In this example, two exposure steps belongs to twice photoetching making technology respectively, and to different photoresist layer exposures, and the whole similar Fig. 8 A of wafer layer patterning manufacture craft～Fig. 8 C those shown down.
Please refer to Fig. 9 A, this pattern 900 adds the pattern of contact mat for lead, it comprises many parallel wire 902a/bs of spacing less than described two step of exposure resolution separately, and a plurality of contact mat 904a/b that are connected these lead 902 ends, wherein each contact mat 904 links to each other with a lead 902a/b, and the former width is greater than the latter.In addition, stagger with two adjacent pad 904a and the positions of 904b on lead 902a/b bearing of trend of touching that two adjacent lead 902a are connected with 902b respectively, make this two adjacent touch fill up 904a and 904b unlikely overlapping.This pattern 900 comprises that more the position is at two groups of leads, 902 middle thicker leads 906.
Because lead 902a/b spacing is less than double-exposure step resolution separately, so part lead 902a and coupled contact mat 904a are produced on the used mask of first step of exposure, and another part lead 902b and coupled contact mat 904b are done on another mask that second step of exposure is used.Wherein, lead 902a and lead 902b alternately arrange, and make that the spacing of pattern becomes twice on arbitrary mask, and can carry out design transfer under the situation that step of exposure resolution allows.Lead 906 is because of close lead 902b, so the design producing of its pattern and lead 902a and contact mat 904a is on same mask in addition.
Please refer to Fig. 9 B, the pattern 92 in order to definition lead 902a is arranged on the used mask 90 of first step of exposure, link to each other with pattern 92 and in order to the pattern 94 of definition contact mat 904a, and in order to define the pattern 96 of lead 906.Please refer to Fig. 9 C, the pattern 97 in order to definition lead 902b is arranged on the employed mask 91 of second step of exposure, and link to each other in order to the pattern 98 of definition contact mat 904b with pattern 97.More can add some auxiliary patterns 99 and optical nearing correction (OPC) on each mask, to define the preferable lead 902a of shape, 906 and contact mat 904a.
Two masks 90 and 91 that above-mentioned the one the second step of exposure are used respectively are formed with the pattern of wafer layer under the part of an aforementioned part that belongs to overlapping mark in order to definition, for example Fig. 5 A, Fig. 5 B those shown in the zone in its counterpart amorphous side district.In addition, this two mask 90 and 91 use order and unrestricted.
As described above in Example, utilize overlapping mark of the present invention, can check the following wafer layer pattern of first step of exposure definition and the defined Aligning degree of wafer layer on X and Y two directions of going up of photoetching making technology afterwards, and check second the exposure manufacturing process steps following wafer layer pattern and the Aligning degree of last wafer layer on X and Y two directions, directions X and Y direction Aligning degree between the following wafer layer pattern that can also check first step of exposure definition and the following wafer layer pattern of second step of exposure definition, and more complete Aligning degree inspection effect can be provided.
Claims (22)
1. overlapping mark in order to check by the defined wafer layer once of first and second step of exposure and in order to the Aligning degree between the photoetching making technology that defines wafer layer on, comprising:
The part of described down wafer layer, comprise 2 the one X to flagpole pattern, 2 the one Y to flagpole pattern, 2 the 2nd X to flagpole pattern and 2 the 2nd Y to flagpole pattern, wherein
Described 2 the one X to described 2 the one Y be defined to flagpole pattern by described first step of exposure, and define one first rectangle, and
Described 2 the 2nd X to described 2 the 2nd Y be defined to flagpole pattern by described second step of exposure, and define one second rectangle, its X is to dimension D
2XGreater than the X of described first rectangle to dimension D
1X, but Y is to dimension D
2YLess than the Y of described first rectangle to dimension D
1YAnd
One photoresist pattern, be positioned at described down wafer layer described part the top and centered on by described these flagpole patterns, and be formed by described photoetching making technology,
Wherein work as described wafer layer down and described photoetching making technology fully on time, described 2 the one X to the center line of flagpole pattern and described 2 the one Y to the intersection point of the center line of flagpole pattern, described 2 the 2nd X to the center line of flagpole pattern and described 2 the 2nd Y intersection point to the center line of flagpole pattern, and the central point three of described photoresist pattern overlaps.
2. overlapping mark according to claim 1 is characterized in that D
1X, D
1Y, D
2X, D
2YBetween the pass be D
1X=D
2Y＜D
2X=D
1Y
3. overlapping mark according to claim 1 is characterized in that, each X is different to flagpole pattern with each the 2nd X to the width of flagpole pattern, and each Y is different to flagpole pattern with each the 2nd Y to the width of flagpole pattern.
4. overlapping mark according to claim 1 is characterized in that, described photoresist pattern comprises a Filled Rectangle photoresist figure, or comprise two X that define one the 3rd rectangle to strip photoresist figure and two Y to strip photoresist figure.
5. overlapping mark according to claim 1 is characterized in that, described these flagpole patterns are all line graph, or is formed on down the irrigation canals and ditches in the described part of wafer layer.
6. overlapping mark according to claim 1, it is characterized in that described first step of exposure belongs to photoetching making technology with described second step of exposure, and forms a dual exposure manufacture craft, or belong to twice photoetching making technology respectively, and define different photoresist layers.
7. overlapping mark according to claim 1 is characterized in that, described first step of exposure and described second step of exposure have one to use X-dipole off-axis light source in the two, and another person uses Y-dipole off-axis light source.
8. overlapping mark according to claim 1 is characterized in that, described first and described second step of exposure jointly in order in described down wafer layer, to define a plurality of figures of spacing less than described two step of exposure resolution separately.
9. overlapping mark according to claim 8 is characterized in that, described these figures comprise multiple bar chart shape or many irrigation canals and ditches.
10. overlapping mark according to claim 1 is characterized in that,
Described first and described second step of exposure jointly in order to the definition spacing less than many parallel wires of described two step of exposure resolution separately, and a plurality of contact mats that are connected described these wire ends, wherein said first and the scope that allows of each comfortable its resolution of described second step of exposure in definitional part lead and part contact mat;
Each contact mat links to each other with a lead, and the former width is greater than the latter's width; And
Stagger in the two adjacent positions of pad on described these lead bearing of trends of touching that are connected with two adjacent leads respectively, make described two adjacent touch the pad unlikely overlapping.
11. a method of checking Aligning degree in order to check by the defined wafer layer once of first and second step of exposure and in order to the Aligning degree between the photoetching making technology that defines wafer layer on, comprising:
Form an overlapping mark, its step comprises:
When described time wafer layer of definition, in the part of described down wafer layer, form by 2 the one X of described first step of exposure definition to and 2 the one Y to flagpole pattern, and by 2 the 2nd X of described second step of exposure definition to and 2 the 2nd Y to flagpole pattern, wherein said 2 the one X are to defining one first rectangle with described 2 the one Y to flagpole pattern, and described 2 the 2nd X are to defining one second rectangle with described 2 the 2nd Y to flagpole pattern, and its X is to dimension D
2XGreater than the X of described first rectangle to dimension D
1X, but Y is to dimension D
2YLess than the Y of described first rectangle to dimension D
1YAnd
When carrying out described photoetching making technology, above the described part of described down wafer layer, form a photoresist pattern, it is centered on by described these flagpole patterns, and when described down wafer layer and described photoetching making technology fully on time, described 2 the one X to the center line of flagpole pattern and described 2 the one Y to the intersection point of the center line of flagpole pattern, described 2 the 2nd X to the center line of flagpole pattern and described 2 the 2nd Y intersection point to the center line of flagpole pattern, and the central point three of described photoresist pattern overlaps; And
Determine described photoresist pattern with respect to described a plurality of location parameters of each described flagpole pattern of wafer layer down, estimating pattern and the directions X Aligning degree between the described photoetching making technology and the Y direction Aligning degree of the defined described down wafer layer of described first step of exposure, and in this at least one of the pattern of the defined described time wafer layer of described second step of exposure and the directions X Aligning degree between the described photoetching making technology and Y direction Aligning degree.
12. the method for inspection Aligning degree according to claim 11, also comprise described 2 the one X of decision to flagpole pattern with respect to described 2 the 2nd X to a location parameter of flagpole pattern and described 2 the one Y to flagpole pattern with respect to the location parameter of described 2 the 2nd Y to flagpole pattern, with pattern and described second step of exposure of estimating the defined described wafer layer down of described first step of exposure defined described under directions X and Y direction Aligning degree between the pattern of wafer layer.
13. the method for inspection Aligning degree according to claim 11, wherein D
1X, D
1Y, D
2X, D
2YBetween the pass be D
1X=D
2Y＜D
2X=D
1Y
14. the method for inspection Aligning degree according to claim 11 is characterized in that, each X is different to flagpole pattern with each the 2nd X to the width of flagpole pattern, and each Y is different to flagpole pattern with each the 2nd Y to the width of flagpole pattern.
15. the method for inspection Aligning degree according to claim 11, it is characterized in that, described photoresist pattern comprises a Filled Rectangle photoresist figure, and is a plurality of location parameters of four limits of the described rectangle photoetching glue pattern of decision with respect to each described flagpole pattern of the described part of wafer layer under described.
16. the method for inspection Aligning degree according to claim 11, it is characterized in that, described photoresist pattern comprise two X that define one the 3rd rectangle to and two Y to strip photoresist figure, and be described two X of decision to and described two Y to strip photoresist figure with respect to described a plurality of location parameters of each described flagpole pattern of the described part of wafer layer down.
17. the method for inspection Aligning degree according to claim 11 is characterized in that, described these flagpole patterns are all line graph, or are formed on the irrigation canals and ditches in the described part of described down wafer layer.
18. the method for inspection Aligning degree according to claim 11, it is characterized in that described first belongs to photoetching making technology with described second step of exposure, and forms a dual exposure manufacture craft, or belong to twice photoetching making technology respectively, and define different photoresist layers.
19. the method for inspection Aligning degree according to claim 11 is characterized in that, described first step of exposure and described second step of exposure have one to use X-dipole off-axis light source in the two, and another person uses Y-dipole off-axis light source.
20. the method for inspection Aligning degree according to claim 11 is characterized in that, described the one the second step of exposure are jointly in order to define a plurality of figures of spacing less than described two step of exposure resolution separately in the wafer layer down described.
21. the method for inspection Aligning degree according to claim 20 is characterized in that, described these figures comprise multiple bar chart shape or many irrigation canals and ditches.
22. the method for inspection Aligning degree according to claim 11 is characterized in that,
Described first and described second step of exposure jointly in order to the definition spacing less than many parallel wires of described two step of exposure resolution separately, and a plurality of contact mats that are connected described these wire ends, wherein said first and the scope that allows of each comfortable its resolution of described second step of exposure in definitional part lead and part contact mat;
Each contact mat links to each other with a lead, and the former width is greater than the latter's width; And
Stagger in the two adjacent positions of pad on described these lead bearing of trends of touching that are connected with two adjacent leads respectively, make described two adjacent touch the pad unlikely overlapping.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101089667A CN101320206A (en) | 2007-06-08 | 2007-06-08 | Overlapping mark and uses thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101089667A CN101320206A (en) | 2007-06-08 | 2007-06-08 | Overlapping mark and uses thereof |
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| CN101320206A true CN101320206A (en) | 2008-12-10 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102265220A (en) * | 2008-12-30 | 2011-11-30 | Asml荷兰有限公司 | Method of determining a characteristic |
| CN101924013B (en) * | 2009-06-17 | 2012-10-03 | 上海华虹Nec电子有限公司 | Method for increasing photo-etching alignment precision after extension |
| CN102880011A (en) * | 2012-09-11 | 2013-01-16 | 天津芯硕精密机械有限公司 | Detection method of registration precision of interlayer graph |
| US8502955B2 (en) | 2008-12-30 | 2013-08-06 | Asml Netherlands B.V. | Method of determining a characteristic |
| CN111806060A (en) * | 2020-07-09 | 2020-10-23 | 昆山乐邦精密科技有限公司 | Method for removing screen by etching screen |
| CN113130340A (en) * | 2020-02-27 | 2021-07-16 | 台湾积体电路制造股份有限公司 | Overlay error measuring method and overlay error measuring structure |
| WO2022147997A1 (en) * | 2021-01-07 | 2022-07-14 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor mark, and semiconductor mark |
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2007
- 2007-06-08 CN CNA2007101089667A patent/CN101320206A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102265220A (en) * | 2008-12-30 | 2011-11-30 | Asml荷兰有限公司 | Method of determining a characteristic |
| US8502955B2 (en) | 2008-12-30 | 2013-08-06 | Asml Netherlands B.V. | Method of determining a characteristic |
| CN102265220B (en) * | 2008-12-30 | 2014-03-12 | Asml荷兰有限公司 | Method of determining characteristic |
| CN101924013B (en) * | 2009-06-17 | 2012-10-03 | 上海华虹Nec电子有限公司 | Method for increasing photo-etching alignment precision after extension |
| CN102880011A (en) * | 2012-09-11 | 2013-01-16 | 天津芯硕精密机械有限公司 | Detection method of registration precision of interlayer graph |
| CN102880011B (en) * | 2012-09-11 | 2014-12-10 | 天津芯硕精密机械有限公司 | Detection method of registration precision of interlayer graph |
| CN113130340A (en) * | 2020-02-27 | 2021-07-16 | 台湾积体电路制造股份有限公司 | Overlay error measuring method and overlay error measuring structure |
| CN113130340B (en) * | 2020-02-27 | 2024-02-20 | 台湾积体电路制造股份有限公司 | Overlay error measurement method and overlay error measurement structure |
| CN111806060A (en) * | 2020-07-09 | 2020-10-23 | 昆山乐邦精密科技有限公司 | Method for removing screen by etching screen |
| WO2022147997A1 (en) * | 2021-01-07 | 2022-07-14 | 长鑫存储技术有限公司 | Method for manufacturing semiconductor mark, and semiconductor mark |
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