IL213064A - Method of determining a characteristic - Google Patents

Method of determining a characteristic

Info

Publication number
IL213064A
IL213064A IL213064A IL21306411A IL213064A IL 213064 A IL213064 A IL 213064A IL 213064 A IL213064 A IL 213064A IL 21306411 A IL21306411 A IL 21306411A IL 213064 A IL213064 A IL 213064A
Authority
IL
Israel
Prior art keywords
characteristic
determining
Prior art date
Application number
IL213064A
Other languages
Hebrew (he)
Other versions
IL213064A0 (en
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of IL213064A0 publication Critical patent/IL213064A0/en
Publication of IL213064A publication Critical patent/IL213064A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
IL213064A 2008-12-30 2011-05-23 Method of determining a characteristic IL213064A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14141408P 2008-12-30 2008-12-30
PCT/EP2009/067620 WO2010076254A1 (en) 2008-12-30 2009-12-21 Method of determining a characteristic

Publications (2)

Publication Number Publication Date
IL213064A0 IL213064A0 (en) 2011-07-31
IL213064A true IL213064A (en) 2016-03-31

Family

ID=41785638

Family Applications (1)

Application Number Title Priority Date Filing Date
IL213064A IL213064A (en) 2008-12-30 2011-05-23 Method of determining a characteristic

Country Status (7)

Country Link
JP (1) JP5525547B2 (en)
KR (1) KR101330116B1 (en)
CN (1) CN102265220B (en)
IL (1) IL213064A (en)
NL (1) NL2003990A (en)
TW (1) TWI467346B (en)
WO (1) WO2010076254A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102540781B (en) * 2010-12-28 2015-09-30 上海微电子装备有限公司 A kind of backside alignment device and method
JP5760566B2 (en) * 2011-03-23 2015-08-12 ソニー株式会社 Optical element, optical system, imaging device, optical apparatus, and master
NL2009294A (en) * 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US9330221B2 (en) * 2014-05-23 2016-05-03 Globalfoundries Inc. Mask-aware routing and resulting device
EP3451060A1 (en) 2017-08-28 2019-03-06 ASML Netherlands B.V. Substrate, metrology apparatus and associated methods for a lithographic process

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6772084B2 (en) * 2002-01-31 2004-08-03 Timbre Technologies, Inc. Overlay measurements using periodic gratings
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7981595B2 (en) * 2005-03-23 2011-07-19 Asml Netherlands B.V. Reduced pitch multiple exposure process
US20080036984A1 (en) * 2006-08-08 2008-02-14 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7704850B2 (en) * 2006-09-08 2010-04-27 Asml Netherlands B.V. Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method
US7532331B2 (en) * 2006-09-14 2009-05-12 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US7619737B2 (en) * 2007-01-22 2009-11-17 Asml Netherlands B.V Method of measurement, an inspection apparatus and a lithographic apparatus
JP4871786B2 (en) * 2007-05-11 2012-02-08 東京応化工業株式会社 Pattern formation method
CN101320206A (en) * 2007-06-08 2008-12-10 旺宏电子股份有限公司 Overlapping mark and uses thereof
US7911612B2 (en) * 2007-06-13 2011-03-22 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

Also Published As

Publication number Publication date
CN102265220A (en) 2011-11-30
TWI467346B (en) 2015-01-01
JP5525547B2 (en) 2014-06-18
KR101330116B1 (en) 2013-11-15
CN102265220B (en) 2014-03-12
IL213064A0 (en) 2011-07-31
NL2003990A (en) 2010-07-01
KR20110110263A (en) 2011-10-06
TW201040669A (en) 2010-11-16
JP2012516027A (en) 2012-07-12
WO2010076254A1 (en) 2010-07-08

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