201034136 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種載體’特別是指一種载置發光二 極體的具有電性的散熱載體。 【先前技術】 隨著科技的急速發展，刺激了電子用品的大量需求與 量產化’在LED產業及太陽能產業前景一片看好時，高功 率LED及太陽能面板的组態和散熱方式，一直是目前產業 關注的焦點。 參閱圖1’以一般載置高功率發光二極體u的散熱載 體12為例，主要包含有一金屬散熱片121、與該發光二極 體11電性連接且疊置在該金屬散熱片121的一電路板122 ，及黏結該電路板122與該金屬散熱片121的一樹脂層123 〇 惟，前述發光二極體11雖然耗電量極低，卻仍然會因 為所產生的熱效應，影響發光的效能及使用壽命，尤其是 該發光二極體11的熱能，必須一層一層經電性連接區、電 路板122，及樹脂層123 ,才能傳導至散熱效果較佳的金屬 散熱片121，因此，在熱傳導上仍存在有大量熱阻的缺失， 所以，並無法有效解決熱效應所造成的影響。 參閱圖2，為了解決前述缺失，中華民國專利第 M345346號新型專利案所揭露的散熱基板2主要是在一金 屬散熱板21上依序形成有防氧化金屬鍍膜22、導熱陶瓷薄 膜23、金屬導電膜24,及導電厚膜金屬層u。藉此，直接 201034136 在該金屬散熱板21上形成電性連接區，而能省略電路板的 設置，及避免選用樹脂層，進而提升散熱效率。 摩由於做為電氣絕緣用的導熱陶莞薄琪22仍然是阻 隔在發光二極體與金屬散熱板21間，以厚度7GxiQ.6m的導 熱陶竞薄膜22為例，其熱傳係數只有l(hv/mjc左右，因此 發光極體散發的熱能，同樣必須一層一層經導電厚媒 金屬層25、金屬導電膜24、導熱陶竟薄膜23，及防氧化金 屬鍵膜仏才能料至散熱效果較佳的金屬散熱板η，而 仍然會形成熱阻，景>響散熱的效果，且該導熱时薄膜η 成本較高，而相當不符合成本較益。 【發明内容】 因此本發明之目的，即在提供一種可以有效提昇散 熱效率的具有電性的散熱載體。 於疋本發明的具有電性的散熱載體，是用於承載一 電子元件，包含一金屬基板、一絕緣層，及一導電層。該 金屬基板具有形成在一端面且設置該電子元件的一第一熱 傳區與一第二熱傳區。該絕緣層是形成在該金屬基板的第 一熱傳區。該導電層具有佈設在該絕緣層上或佈設在該第 熱傳區的一第一電性區，及同樣佈設在該絕緣層上且與 該第一電性區相間隔的至少一第二電性區，使該第一、第 一電性區可分別與不具有極性或具有極性的電子元件電連 接。 本發明的功效是能使該電子元件直接與熱傳導效能佳 的金屬基板或導電層接觸，進而透過該金屬基板達到散熱 201034136 的效果，並有效提升散熱效率。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之數個較佳實施例的詳細說明中，將可 清楚的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說 明内容中’類似的元件是以相同的編號來表示。 參閱圖3及圖4 ’本發明具有電性的散熱載體的一第一 較佳實施例是用於承載一不具有極性的電子元件3。該電子 兀件3可以是高功率LED或太陽能面板的晶片。該散熱載 體包含一金屬基板4、一絕緣層5、一導電層6，及一金屬 接著層9。 該金屬基板4在本較佳實施例是一種鋁合金材料，並 具有形成在一第一端面401的一第一熱傳區41與一第二熱 傳區42,及背向於該第一端面4〇1的一第二端面4〇2。該 第一熱傳區41是形成在該第一端面4〇1的中間部位。該第 一熱傳區42是形成在該第一端面4〇1不包含該第一熱傳區 41的其它區域。 該絕緣層5是形成在該金屬基板4的第二熱傳區42。 在本較佳實施例中，該絕緣層5是一種氧化鋁（Al2〇3)材料 〇 該導電層6在本較佳實施例為一種銅（Cu)材料並具有 佈設在該絕緣層5上且相間隔的一第一電性區（正極）61與一 第二電性區（負極）62，及佈設在該金屬基板4第一熱傳區Μ 201034136 且與該第一、第二電性區61、62相間隔的一接著區63。該 第一、第二電性區61、62是分別透過打線（b〇nding 製程與該電子元件3電連接。該接著區63可藉由熱傳接的 特性，與該電子元件3固結。 該金屬接著層9在本較佳實施例為一種銅（Cu)材料是 佈設在該金屬基板4第二端面4G2，可藉由熱傳佳及易於焊 接的特性’與其它組件焊結。 值得一提的是，佈設該絕緣層5與該導電層6的方法 之一為化學蝕刻法，主要是於該金屬基板4第一端面4〇1 形成該絕緣層5，再採用光罩對該絕緣層5曝光，經顯影、 蝕刻後，形成佈設在該金屬基板4第二熱傳區42的絕緣層 5。同樣的，該導電層6是預先形成在該絕緣層5與該金屬 基板4第一端面401，經曝光、顯影、蝕刻後，形成佈設在 該絕緣層5及金屬基板4第二熱傳區42的第一電性區61 與第二電性區62。 由於該電子元件3沒有極性，因此，阻隔在該第二電 性區62與該金屬基板4第二熱傳區42的絕緣層5 ’同樣可 以達到電氣絕緣的目的，且重要的是，該絕緣層5並不會 阻隔在該電子元件3與該金屬基板4間，也就是說，該電 子元件3是透過該接著區63直接與該金屬基板4接觸，由 於銅（Cu)的熱傳係數高達38〇w/m k，而鋁（A。的熱傳係數也 有200w/m.k，都具有極佳的熱傳效果，因此，可以有迅速 且有效的散發該電子元件3的熱能，大幅提升散熱效果。 參閱囷2、圖3,以相同面積的習知金屬散熱板21與 201034136 本案金屬基板4搭載相同功率的發光二極鱧（電子元件⑽ 例，本發明可以發揮數倍於先前技術的散熱效果，藉此， 不但能縮小體積，且能有大幅提升發光效率。相對的，以 太陽能面板的晶片（電子元件3)為例，同樣可以縮減散熱器（ 金屬基板4)的體積，或在相同的散熱面積下，提升聚光率 及發電效能。 參閱圖5、圖6’是本發明一第二較佳實施例，同樣包201034136 VI. Description of the Invention: [Technical Field] The present invention relates to a carrier', particularly to an electrically conductive heat dissipating carrier on which a light emitting diode is placed. [Prior Art] With the rapid development of technology, it has stimulated a large demand and mass production of electronic products. When the LED industry and the solar industry are promising, the configuration and heat dissipation methods of high-power LEDs and solar panels have been The focus of industry attention. For example, the heat-dissipating carrier 12 of the high-power light-emitting diode u is generally disposed, and mainly includes a metal heat sink 121 electrically connected to the light-emitting diode 11 and stacked on the metal heat sink 121. a circuit board 122, and a resin layer 123 of the circuit board 122 and the metal heat sink 121. The light-emitting diode 11 has a very low power consumption, but still affects the light due to the thermal effect generated. The performance and service life, especially the thermal energy of the LED 11, must be electrically connected to the circuit board 122 and the resin layer 123 one by one to be conducted to the metal heat sink 121 with better heat dissipation effect. There is still a large amount of thermal resistance missing on the heat conduction, so the effect of the thermal effect cannot be effectively solved. Referring to FIG. 2, in order to solve the aforementioned defect, the heat-dissipating substrate 2 disclosed in the new patent No. M345346 of the Republic of China is mainly formed with an anti-oxidation metal plating film 22, a thermally conductive ceramic film 23, and a metal conductive material on a metal heat dissipation plate 21. The film 24, and the conductive thick film metal layer u. Thereby, the direct connection layer 201034136 forms an electrical connection region on the metal heat dissipation plate 21, and the arrangement of the circuit board can be omitted, and the resin layer can be avoided, thereby improving the heat dissipation efficiency. As a result of the thermal insulation of the electrical insulation, the ceramic pottery thin film 22 is still blocked between the light-emitting diode and the metal heat sink 21, with a thickness of 7GxiQ.6m thermal conductive Tao Jing film 22 as an example, its heat transfer coefficient is only l ( Hv/mjc or so, so the thermal energy emitted by the illuminating body must also be layer by layer through the conductive thick metal layer 25, the metal conductive film 24, the thermal conductive ceramic film 23, and the anti-oxidation metal bond film to achieve better heat dissipation. The metal heat sink η, while still forming a thermal resistance, the effect of heat dissipation, and the cost of the film η at the time of heat conduction is relatively high, and is relatively inconsistent with cost. [Invention] Therefore, the object of the present invention is An electric heat dissipating carrier capable of effectively improving heat dissipation efficiency is provided. The electric heat dissipating carrier of the present invention is for carrying an electronic component, comprising a metal substrate, an insulating layer, and a conductive layer. The metal substrate has a first heat transfer region and a second heat transfer region formed on an end surface and disposed on the electronic component. The insulating layer is formed in a first heat transfer region of the metal substrate. a first electrical region disposed on the insulating layer or disposed in the first heat transfer region, and at least a second electrical region disposed on the insulating layer and spaced apart from the first electrical region The first and first electrical regions can be electrically connected to electronic components having no polarity or polarity, respectively. The effect of the present invention is to enable the electronic component to directly contact a metal substrate or a conductive layer having good heat conduction performance, and thereby pass through the The metal substrate achieves the effect of heat dissipation 201034136, and effectively improves the heat dissipation efficiency. [Embodiment] The foregoing and other technical contents, features, and effects of the present invention are described in the following detailed description of several preferred embodiments with reference to the drawings. Before the present invention is described in detail, it is to be noted that in the following description, 'similar elements are denoted by the same reference numerals. Referring to FIG. 3 and FIG. 4 'The present invention is electrically A first preferred embodiment of the heat sink carrier is for carrying a non-polar electronic component 3. The electronic component 3 can be a high power LED or solar panel wafer. The heat dissipating carrier comprises a metal substrate 4, an insulating layer 5, a conductive layer 6, and a metal backing layer 9. The metal substrate 4 is an aluminum alloy material in the preferred embodiment and has a first end face 401 formed thereon. a first heat transfer zone 41 and a second heat transfer zone 42, and a second end face 4〇2 facing away from the first end face 4〇1. The first heat transfer zone 41 is formed at the first An intermediate portion of the end face 4〇 1. The first heat transfer region 42 is formed in another region where the first end face 4〇1 does not include the first heat transfer region 41. The insulating layer 5 is formed on the metal substrate 4. The second heat transfer region 42. In the preferred embodiment, the insulating layer 5 is an aluminum oxide (Al 2 〇 3) material. The conductive layer 6 is a copper (Cu) material in the preferred embodiment and has a layout. a first electrical region (positive electrode) 61 and a second electrical region (negative electrode) 62 spaced apart from each other on the insulating layer 5, and disposed on the first heat transfer region Μ 201034136 of the metal substrate 4 and the same 1. A subsequent region 63 in which the second electrical regions 61, 62 are spaced apart. The first and second electrical regions 61 and 62 are respectively electrically connected to the electronic component 3 through a wire bonding process. The bonding region 63 can be consolidated with the electronic component 3 by heat transfer. The metal back layer 9 is a copper (Cu) material which is disposed on the second end surface 4G2 of the metal substrate 4 and can be soldered to other components by heat transfer and easy soldering. It is noted that one of the methods for arranging the insulating layer 5 and the conductive layer 6 is a chemical etching method, mainly for forming the insulating layer 5 on the first end surface 4〇1 of the metal substrate 4, and then using the photomask to the insulating layer. 5 exposure, after development and etching, forming an insulating layer 5 disposed on the second heat transfer region 42 of the metal substrate 4. Similarly, the conductive layer 6 is formed in advance on the insulating layer 5 and the first end surface of the metal substrate 4. 401, after exposure, development, and etching, forming a first electrical region 61 and a second electrical region 62 disposed on the insulating layer 5 and the second heat transfer region 42 of the metal substrate 4. Since the electronic component 3 has no polarity, Therefore, the second electrical region 62 and the second heat transfer region 42 of the metal substrate 4 are blocked. The insulating layer 5' can also achieve the purpose of electrical insulation, and it is important that the insulating layer 5 is not blocked between the electronic component 3 and the metal substrate 4, that is, the electronic component 3 is transmitted through the bonding region. 63 is directly in contact with the metal substrate 4, since the heat transfer coefficient of copper (Cu) is as high as 38 〇w/mk, and aluminum (A. has a heat transfer coefficient of 200 w/mk, both of which have excellent heat transfer effects, therefore, The heat energy of the electronic component 3 can be quickly and effectively dissipated, and the heat dissipation effect can be greatly improved. Referring to FIG. 2 and FIG. 3, the conventional metal heat sink 21 and the 201034136 of the same area are provided with the same power light-emitting diodes. (Electronic component (10) As an example, the present invention can exert a heat dissipation effect several times that of the prior art, whereby not only the volume can be reduced, but also the luminous efficiency can be greatly improved. In contrast, the solar panel wafer (electronic component 3) is taken as an example. Similarly, the volume of the heat sink (metal substrate 4) can be reduced, or the concentrating rate and power generation performance can be improved under the same heat dissipation area. Referring to FIG. 5 and FIG. 6 ′, a second preferred embodiment of the present invention is Same package
含-金屬基板4、一第一絕緣層5、一導電層7,及一金屬 接著層9,不同處在於：該散熱載體更包含有—第二絕 8 〇 該導電層7在本較佳實施例為—種銅（Cu)材料，並具有 佈設在該金屬基板4第-熱傳區41的—第—電性區（負極 )71 ’及佈設在該絕緣層5上且與該第—電性區^相間隔的 -第二電性區（正極）72。該第〜電性區71(負極）可藉由銅金 屬熱傳佳及易於焊接的特性，容易與該電子元件3焊固為 -體(如錫焊)。且該第一、第二電性區71、72是分別透過 打線（bonding wire)的製程與具有極性的電子元件3電連接 該第二絕緣層8是形成在該金屬基板4反向於該第一 端面401的一第二端面402。 該金屬接著層9是佈設在該第：絕緣層8丨，同樣可 藉由熱傳佳及易於焊接的特性，與其它組件焊結。 由於該電子元件3具有極性，因此，必須於該金屬基 板4第二端面402再佈設有該第二絕緣層8，配合該第一絕 201034136 緣層5 &到電氣絕緣的目的。重要的是’該第一、第二絕 緣層5、8並不會阻隔在該電子元件3與該金屬基板4間， 也就是說，該電子元件3是透過該第—電性區71以散熱面 積，漸擴大的金字塔形熱傳方式’直接向金屬基板4傳遞 熱能，由於銅（Cu)的熱傳係數高達38〇w/mk，而鋁（Α丨）的熱 傳係數也有200w/m.k，都具有極佳的熱傳效果，因此，可 乂有迅速且有效的散發該電子元件3的熱能，大幅提升散 熱效果。 另外，值得一提的是，前述絕緣層5(或第一絕緣層5) Q 也可以是-種電路板（PCB)，由於電路板(pcB)並不會阻隔 在該電子元件3與該金屬基板4間，因此，該電子元件3 可以透過該接著區63或該第—電性區71直接向金屬基板4 傳遞熱能，進而達到A幅提升散熱效果的目的。 據上所述可知，本發明之具有電性的散熱載體具有下 列優點及功效： T於金屬材料都具有極佳的熱傳效果，因此，本發明 主要是使該電子元件3直接與金屬基板4或導電層6、了接◎ 觸’藉此，可以迅速的散發該電子元件3的熱能，不但可 以大幅提升散熱效果’且能有效提升該電子元件3的工 效率，及使用壽命。 准以上所述者’僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 201034136 【圖式簡單說明】 圖1是一刹視圖，說明一般恭番+ 版戰置鬲功率發光二極體的 散熱載體； 圖2是-刹視圖’說明中華民國專利第如45346號新 型專利案； 圖3是一立體圖，說明本發明一具有電性的散熱載體 的一第一較佳實施例； 圖4是該第一較佳實施例的一剖視圖； ® 圖5是一立體圖，說明本發明一具有電性的散熱載體 的一第二較佳實施例；及 圖6是該第二較佳實施例的一剖視圖。 201034136The metal-containing substrate 4, a first insulating layer 5, a conductive layer 7, and a metal back layer 9 are different in that the heat-dissipating carrier further includes a second insulating layer. For example, a copper (Cu) material has a first electrical region (negative electrode) 71' disposed on the first heat transfer region 41 of the metal substrate 4, and is disposed on the insulating layer 5 and is electrically connected to the first The regions are spaced apart by a second electrical region (positive) 72. The first electrical region 71 (negative electrode) can be easily soldered to the body (e.g., soldered) by the copper metal heat transfer and easy soldering. And the first and second electrical regions 71 and 72 are respectively electrically connected to the electronic component 3 having polarity by a bonding wire process, and the second insulating layer 8 is formed on the metal substrate 4 opposite to the first A second end face 402 of an end face 401. The metal backing layer 9 is disposed on the first insulating layer 8 and can be welded to other components by the characteristics of heat transfer and easy soldering. Since the electronic component 3 has a polarity, the second insulating layer 8 must be disposed on the second end surface 402 of the metal substrate 4 to match the first insulating layer 20104136 to the purpose of electrical insulation. What is important is that the first and second insulating layers 5 and 8 are not blocked between the electronic component 3 and the metal substrate 4, that is, the electronic component 3 is radiated through the first electrical region 71. The area, the gradually expanding pyramid-shaped heat transfer mode 'transmits heat directly to the metal substrate 4, since the heat transfer coefficient of copper (Cu) is as high as 38 〇w/mk, and the heat transfer coefficient of aluminum (Α丨) is also 200 w/mk. Both have excellent heat transfer effects, so that the heat energy of the electronic component 3 can be quickly and effectively dissipated, and the heat dissipation effect can be greatly improved. In addition, it is worth mentioning that the foregoing insulating layer 5 (or the first insulating layer 5) Q may also be a circuit board (PCB), since the circuit board (pcB) does not block the electronic component 3 and the metal. Between the substrates 4, the electronic component 3 can directly transfer thermal energy to the metal substrate 4 through the bonding region 63 or the first electrical region 71, thereby achieving the purpose of improving the heat dissipation effect of the A-frame. It can be seen from the above that the electrically heat-dissipating carrier of the present invention has the following advantages and effects: T has excellent heat transfer effect on metal materials, and therefore, the present invention mainly makes the electronic component 3 directly connected to the metal substrate 4 Or the conductive layer 6 is connected to the touch, thereby rapidly dissipating the thermal energy of the electronic component 3, which not only greatly improves the heat dissipation effect, but also effectively improves the work efficiency and the service life of the electronic component 3. The above-mentioned ones are only the preferred embodiments of the present invention, and are not intended to limit the scope of the present invention, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention, All remain within the scope of the invention patent. 201034136 [Simple diagram of the diagram] Figure 1 is a brake view showing the general heat sink carrier of the power-emitting diode of the Kungfan + version of the battle; Figure 2 is a view of the brakes of the Republic of China patent No. 45346 Figure 3 is a perspective view showing a first preferred embodiment of an electrically conductive heat dissipating carrier of the present invention; Figure 4 is a cross-sectional view of the first preferred embodiment; Figure 5 is a perspective view of the present invention A second preferred embodiment of an electrically thermally dissipating carrier; and Figure 6 is a cross-sectional view of the second preferred embodiment. 201034136
【主要元件符號說明】 3 ....... •…電子元件 61 ···.· •…第一電性區 4 ....... •…金屬基板 62····. …·第二電性區 401… •…第一端面 63·.·.· •…接著區 402… •…第二端面 7…… •…導電層 41…… •…第一熱傳區 71 .·... •…第一電性區 42·.··. •…第二熱傳區 72·.·· …·第二電性區 an ι,Μ. Ά f ^ Mi ifM- W^\ Ο ...... 5 ...... Ο - ν'ΐϋ* /g 6…… •…導電層 9…… ••…金屬接著層[Description of main component symbols] 3 ....... •...Electronic component 61 ······...The first electrical region 4 ....... •...metal substrate 62····. ... • The second electrical region 401... • The first end face 63·..... • the following region 402... • The second end face 7... • The conductive layer 41... • The first heat transfer region 71. ... •...The first electrical zone 42·.··.•...the second heat transfer zone 72·.····the second electrical zone an ι,Μ. Ά f ^ Mi ifM- W^\ Ο ...... 5 ...... Ο - ν'ΐϋ* /g 6...... •...conductive layer 9... ••...metal layer
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