TW201033570A - Methods and apparatus for recovering heat from processing systems - Google Patents

Abstract

Methods and apparatus for recovering heat from disposed effluents are disclosed herein. In some embodiments, an apparatus may include a first process chamber configured for gaseous or liquid processes; a second process chamber configured for liquid processes; and a heat pump having a compressor and a first heat exchanger, wherein the compressor is configured to use a first effluent exhausted from the first process chamber and wherein the first heat exchanger having first and second sides configured to transfer heat therebetween, wherein the first side is configured to flow a liquid reagent therethrough and into the second process chamber, and wherein the second side is configured to flow the pressurized first effluent from the first process chamber therethrough. In some embodiments, a heater may be disposed between the heat pump and the second process chamber to further heat the liquid reagent prior to entering the second process chamber.

Description

201033570 VI. OBJECTS OF THE INVENTION: TECHNICAL FIELD [0001] Embodiments of the present invention generally relate to semiconductor, planar panel, optoelectronic or other germanium and thin film processing chambers and apparatus, and more particularly to recycling from such processing systems The method and equipment of the heat. [Prior Art] • In semiconductors, flat panel, optoelectronics, and other germanium or thin film processing systems, many processes require preheating of liquid or gaseous reagents prior to processing the system. The reagents are often heated by a heater just prior to use, for example using a point heater or similar heating device. After treatment, effluent from the processing system (e.g., used or "dirty" water or chemicals, gaseous emissions, etc.) is typically directed to a waste treatment system to treat and/or treat the effluent. Typically, the effluent must be cooled prior to disposal or dilution of the effluent using a cooler medium, or the heat must be dissipated to ambient air, which is then removed. The preheating reagent requires a large amount of energy' which increases the manufacturing cost, so the present invention relates to a method and apparatus for recovering heat from a ef〇sed effiuent' to help reduce manufacturing costs. SUMMARY OF THE INVENTION Methods and apparatus for recovering heat from a treatment effluent are disclosed herein. In some embodiments, an apparatus includes: a substrate processing system including a processing chamber configured for a liquid process; a fourth 201033570 heat exchanger having first and second sides and the heat exchanger configured to Transferring heat between the first and second sides 'where the first side is configured to flow liquid reagent therethrough and to the processing chamber' and the second side is configured to allow effluent from the processing chamber to pass therethrough; And a heater disposed in line with the first side of the first heat exchanger to heat the liquid reagent before it enters the processing chamber.

In some embodiments, the substrate processing system includes: a waste heat source for providing a first waste fluid in which waste heat is stored; a first processing chamber having a reagent source coupled to the reagent source and configured to provide a reagent An internal volume to the first processing chamber; and a heat pump coupled between the waste heat source and the feed reagent line for flowing the reagent into the internal volume of the processing chamber, the heat pump configured to transfer the waste heat source Heat to the reagents sent to the reagent line. In some embodiments, the thermal system includes a compressor and a first heat exchanger, wherein the compressor is coupled to align with the waste heat source and the first side of the heat exchanger and overheat the first waste fluid stream The first waste fluid is pressurized before the first side of the exchanger, and wherein the second side of the first heat exchanger is configured to allow reagent to flow therethrough. In some embodiments, the system further includes a heater disposed to align with the second side of the first heat exchanger to heat the reagent prior to entering the first processing chamber. In some embodiments, the waste heat source comprises = one or more of the columns: from the effluent configured for the processing chamber for the liquid or gaseous process, the compressed air system, the air separation houser, the gaseous state from: the weak device Emissions or liquid coolant, hot air or liquid coolant from electronic equipment, etc. # 5 201033570 In some embodiments, the 篦 占 占 处理 处理 处理 处理 处理 处理 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占The second imaginary cavity of the gaseous process is up to, and the first waste heat is provided as a matter of gaseous emissions from the first processing chamber

In some embodiments, the two heat exchangers transfer heat between the first sides, which causes reagents to flow therethrough through which the second side of the converter is vented. The system further includes a flow of the second heat exchanger in the second heat exchanger configuration to the first processing chamber configuration such that the first and second sides are used for the first and second One side is configured with 'and the second of the second heat transfer chamber is discharged

= In the aspect of the invention - a method for recovering heat from the treatment of the effluent is disclosed. In some embodiments, a method of processing a substrate includes a processing chamber configured for a liquid process wire-bonded heat exchanger having a first side of a liquid reagent flowing into a processing system and for providing a processing chamber a second side of the effluent (directly or drawn from the intermediate sump); preheated by passing heat from the effluent flowing through the second side of the heat exchanger to the reagent flowing through the first side of the heat exchanger (d) a liquid reagent; and heating the preheated liquid reagent to a desired temperature using a heater disposed between the heat exchanger and the processing chamber. In some embodiments, a method of processing a substrate includes: flowing a liquid reagent through a first side of the heat exchanger to preheat the liquid reagent; using a heater to heat the preheated liquid reagent to a desired temperature; The heated liquid reagent flows to a processing chamber configured for liquid processing; and the process effluent from the chamber (either directly or pumped from the intermediate sump) flows through the second side of the heat 6 201033570 exchanger for preheating A liquid reagent that flows through the first side of the heat exchanger. 'Processing a substrate in some embodiments includes flowing a reagent through a heat pump stalked to a waste heat source to transfer heat from the waste heat source to the reagent to heat the reagent; and flowing the heated reagent to the processing chamber Room to process the substrate. The method of processing a substrate in some embodiments includes flowing a reagent through a first side of the first heat exchanger to transfer heat from the pressurized waste heat flow vessel and flowing through a second side of the heat exchanger to heat the reagent And flowing the heated reagent to the processing chamber to process the substrate. In some embodiments, the 'waste heat source or waste heat fluid comprises one or more of the following: liquid waste fluid from a process chamber configured for a gaseous process, effluent or liquid coolant, a compressed air system, an air separation compressor, from Attenuate the gaseous emissions or liquid cooling pins of the device, hot air or liquid coolant from electronic and/or mechanical equipment, and the like. Other and further embodiments will be described in detail later.

[Embodiment] Methods and apparatus for recovering and utilizing heat from a disposed effluent in a processing system are disclosed herein. The method and apparatus of the present invention preheat fluid using waste heat from the processing system (e.g., waste effluent from the processing chamber and waste heat generated by other processing system components) prior to use in the same and/or other processing systems And help reduce the energy consumption of substrate processing systems (such as semiconductors, flat panels, photovoltaics or other dream and thin 7 201033570 membrane processing systems). Reducing the heat of the treatment effluent is more beneficial for the subsequent treatment of the treatment effluent, for example by attenuating or other means of disposal. Figure 1 illustrates a processing system in accordance with some embodiments of the present invention. The processing system 1 can operate a process that requires heating of the input (gas or liquid). In the example of Figure 1, input 2 (e.g., cold ultrapure water (UPW)) is supplied to the processing chamber 3»the processing system further includes a plurality of waste heat sources 4, 5, 6. The waste heat source can be a processing device, a weakening device, an air conditioning device, etc., which will be described in detail below. In some embodiments, the waste heat source (e.g., waste heat source 4) is the effluent disposed of by the processing chamber 3 itself (e.g., the dashed line connecting the processing chamber 3 to the waste heat source 4). The processing system 1 includes one or more heat pumps 7 for transferring the heat of the waste heat sources 5, 6 and then heating the input of the chamber 3 prior to disposal in the effluent system 1 . If compatible, the waste heat sources 5, 6 can be collected and the same heat pump (as shown) used. Alternatively, an incompatible waste heat can be used with an independent hot fruit system (not shown). Depending on the situation, a preheater (e.g., heat exchanger 8) can be used to deliver heat from the spent φ gas/effluent that is not compatible with the heat pump 7 to the processing chamber 3 prior to disposal in the effluent system 11. Input 2° In some embodiments, the effluent systems 10, 11 are the same effluent system. Also depending on the situation, the heater 9 is arranged to further heat the input 2 to the desired process temperature as needed. Many variations of the system will be described later. Figure 2 is a green substrate processing system in accordance with some embodiments of the present invention. The semiconductor processing system 100 includes a processing chamber 102 that is configured for wet processing (e.g., wet bench process). The processing chamber 1 can be any processing chamber suitable for liquid processing, while the liquid system 8 201033570 has a heated effluent for the delivery of liquid reagents and recoverable heat. Suitable processing chambers include any single substrate or batch cleaning system' such as chambers for wet chemical etching or cleaning (e.g., preheating or stripping wet cleaning). An example processing chamber includes OASIS STRIPtm or OASIS CLEANTM, which is commercially available from Applied Materials, Inc. of Santa Clara, California. Further, as shown in Fig. 1, the processing chamber 1〇2 includes a substrate support member 112 for supporting the substrate 114. The substrate 114 can be any material suitable for processing, such as crystalline germanium (e.g., Si<l>4 Si<lll>), cerium oxide, strain enthalpy, cerium, doped or undoped polycrystalline germanium, doped Hetero- or undoped germanium wafers, patterned or unpatterned wafers, silicon dioxide-on-insulator (SOI), carbon-doped germanium oxide, tantalum nitride, germanium-doped germanium , germanium, gallium antimonide, glass, sapphire, display substrate (such as liquid crystal display (LCD), plasma display, electroluminescent (EL) lamp display, etc.), solar array substrate, light-emitting diode (LED) substrate, etc. . The substrate 114 can be of various sizes, such as wafers having a diameter of 200 millimeters (mm) or 30 inches, and rectangular or square panels. The front side of the substrate 114 can be hydrophilic, hydrophobic, or a combination thereof. The front side is patterned or has one or more patterned layers (e.g., a photomask) placed thereon. The substrate 114 is placed in a recess 116 on the surface of the substrate support 112. The recess 116 is used, for example, to immerse the substrate 114 in the reagent bath. The reagent is supplied by a nozzle 118 provided above the support member 112. The recess 116 is not limited to the recess formed on the surface of the substrate support. Therefore, the recess 116 can be formed, for example, by a side ring around the substrate for supporting the substrate 114 or by a frame (not shown). The substrate 114 constitutes a recess base. The substrate support further includes a plate (not shown) disposed about 3 millimeters (mm) below the back side of the substrate 114. The board includes a transducer (not shown) that can emit a range of ultrasonic frequencies or sounds of about 800-2000 kilohertz (kHz). A fluid inlet (not shown) is disposed in the substrate support 112 and passes through the plate to supply the fluid, and further supplies the liquid during processing to fill a gap of about 3 mm between the plate and the back side of the substrate u4 (not shown). The carrier which can be used to transfer the ultrasonic energy to the substrate 114 can be used, for example, as a means of providing a search during the cleaning process or as a means of heating the wafer. The substrate fulcrum member further includes a lifting/rotating member (not shown) which is used, for example, to controllably spread the reagent evenly over the entire front surface of the substrate 114. The top of the processing chamber 1〇2 includes a filter (not shown) for cleaning the air flowing into the processing chamber to the front side of the substrate 114. The nozzle 118 can be coupled to the incoming fluid line 104 at the wall of the processing chamber 1〇2. The nozzles are arranged to direct the airflow, vapor # or liquid reservoir to the front side of the substrate 114. In some embodiments, the nozzle 118 dispenses reagent to fill the recess 116 whereby the front side of the substrate 114 is immersed in the reagent. In some embodiments, the nozzles 118 dispense and evenly distribute the reagents across the front side of the substrate 114. For example, the nozzles dispense reagents at a flow rate sufficient to allow the reagent to cover the front side of the substrate 114 while maintaining a rotational speed sufficient to allow the reagent to cover the front side of the substrate 114, The front side is covered with reagents. The reagent source 108 is coupled to the processing chamber 1〇2' via a feed stream line 1〇4 to provide a liquid reagent to the processing chamber 1〇2, for example, through the nozzle 118. Heater 120 is placed along fluid line (10) to heat the liquid reagent flowing through fluid line 104 prior to use in liquid reagent 201033570 in processing chamber 102. The heater 12A can be placed at any suitable point along the fluid line 1'4, for example as close as possible to the processing chamber 1〇2 to minimize heat loss to the heater 12, for example using a point heater (p〇int 〇 f use heater) or other suitable heating device for heating the reagent to the desired temperature. For example, in some embodiments, the reagent source 108 supplies a liquid reagent at a level of from about 5 C to about 180 °C. In some embodiments, the heater 丨 2 〇 heats the liquid reagent from about 35 ° C to about 18 。.

The heat exchanger 103 is arranged to align (in_line_) with the feed fluid line 104 upstream of the heater 12A to preheat the liquid reagent from the reagent source (10) before flowing through the heated stomach. The heat exchanger 103 generally includes a first side and a second side that are thermally and thermally joined to transfer heat therebetween. The first side of heat exchanger 103 is alignably coupled to the feed stream line 104 and flows therethrough. The effluent line of the heat exchanger chamber 102 flows through therein for the second side of the liquid reagent 103 supplied by the reagent source 1 to be coupled to the processing chamber 106' for the effluent of the processing chamber 1〇2 The heat stored in the rafts from the processing chamber 102 is transferred through the heat exchanger 103 to the liquid reagent supplied to the processing chamber 102. For example, in some embodiments, the temperature of the effluent discharged after processing chamber 102 is from about 30 ° C to about 18 〇 5 . . . so that the heat stored in the effluent can be used to supply to the treatment. The liquid reagent of the chamber 1n is preheated, and the power required to heat the liquid reagent is reduced. In one embodiment, the heat is transferred from the effluent to preheat the line. The liquid test 201033570 agent can reduce the energy consumption of the heater 12 Torr by at least about 20%. The heat exchanger 103 can be any heat exchanger suitable for exchanging heat between two liquids and can have any suitable size depending on the actual available space. In some embodiments, heat exchanger 103 is a non-pressurized system 'where the effluent flows through the second side of the heat exchanger due to gravity. In some embodiments, heat exchanger 103 is a pressurized system in which the effluent is flowing The contents are, for example, collected in the trough or intermediate sump 105' and can be drawn through the second side of the heat exchanger. Although the figures depict separate components, in some embodiments, the heat exchanger 103 can be coupled to the heater 12. Single synthesis The two functions described above are provided. In some embodiments, the heat exchanger 103 is integrated with the processing chamber 1〇2 such that the liquid reagent only needs to be heated to a lower temperature before being transported to the processing chamber via the heat exchanger. It can then raise the temperature of the liquid reagent to the desired processing temperature, or the heat exchanger is provided with an outlet to attach the heater. The effluent line 106 is coupled to the substrate of the processing chamber 102. The substrate of the processing chamber 102 need not be as 1 is generally horizontal and generally inclined to allow the treatment effluent to flow towards a single location, such as a discharge apparatus disposed on the substrate and connected to the effluent line 106. The effluent of the processing chamber 1〇2 flows, for example, through the effluent tube. Line 1〇6 to the effluent system 11〇 to treat and/or dispose of the effluent. The effluent system 11 〇 includes, for example, a weakening system or other system suitable for handling the effluent. A suitable material for rigorous heat transfer between the effluent line ι6 and the liquid reagent in the fluid line. The effluent line 106 contains any material that facilitates heat transfer between the effluent and the fluid line 104. Suitable materials. In some embodiments 12 201033570, the material has high thermal conductivity (e.g., greater than or equal to about 3 〇〇 w/mK). In some embodiments, 'thermal conductivity may be lower (e.g., considering material compatibility) In the case of the use of polymers, in some embodiments, the materials include copper, steel, non-recorded steel, mineral steel, Qin, crane, high-alloy alloy, carbon, polymer, niobium, and tantalum-coated metal. At least one of aluminum, carbon, quartz, ceramic and glass, and ceramic and/or glass coating materials. In some embodiments, the fluid supply is selected based on chemical compatibility with the reagent. The material of 〇4. In some embodiments, the material of effluent line 1〇6 is selected based on the chemical compatibility with the treatment effluent. As described above, the 'partial effluent line 1〇6 (i.e., the second side of the heat exchanger 103) is thermally coupled to a portion of the feed fluid line 1〇4 (i.e., the first side of the heat exchanger 103) ). Alternatively, the effluent line 1〇6 can be coiled around the fluid line 104, or thermally coupled to the feed stream line 104 in any suitable configuration, such that the effluent flowing in the effluent line 1〇6 The heat transfer between the liquid reagents flowing in the feed fluid line 1〇4 and flowing to the processing chamber 1〇2 is maximized (for example, the configuration of the effluent line 106 and the feed fluid line 104 constitutes a heat exchanger) . Alternatively or in addition, a portion of the effluent line 1 〇6 can be thermally coupled to the reagent source 1 〇 8 to facilitate the transfer of heat to the reagents in the fluid line 104. The processing system 100 further includes a controller 122' coupled to the processing chamber 110 for controlling its operation and/or controlling one or more other components of the processing system 100. The controller 122 generally includes a central processing unit (CPU), memory, and support circuitry (not shown). The controller 122 controls the process chambers 1 〇 2 13 201033570 and various chamber components either directly or using individual controllers (not shown) associated with the chamber components. In some embodiments, other control elements may be used, such as an industrial controller without a CPU. In operation, first, the liquid reagent flows from the reagent source i08 into the feed fluid line 104 and is heated by the heater 12 to a desired temperature. The reagent then flows into the processing chamber 1〇2 and through the nozzle 118 to the substrate 114. The reagent reacts with the substrate 114 or the material disposed thereon and/or becomes a contaminant, thereby forming an effluent. The effluent is disposed at the base of the chamber 1〇2 by the effluent line 1〇6. The effluent line 1〇6 transfers heat from the effluent to the liquid reagent in the fluid line 〇4 through the heat exchanger ι〇3. The liquid reagent that is warmed by the heat of the recovered effluent is only required to provide less energy before entering the processing chamber 1〇2. Therefore, recovering the heat of the effluent can reduce the energy consumption of the processing system 1 (these embodiments include the heater 1〇2). Alternatively, an external waste heat source may be substituted for the internal circulating waste heat from the treatment effluent to provide waste heat. An example processing system using an external waste heat source will be described below in conjunction with Figure 3. Figure 3 illustrates a substrate processing system in accordance with some embodiments of the present invention. The semi-conducting treatment system includes a semiconductor processing system 300 and a waste heat recovery system 301 for preheating reagents for system 300. The semiconductor processing system 300 is substantially similar to the processing system 1 〇〇. However, unlike the effluent line 106 supplying system 1 waste heat, the effluent line 107 coupled to the intermediate sump 1 〇 5 and the effluent system 110 does not provide waste heat to the feed fluid line 104 of the system 300. The waste heat recovery system 301 includes a heat pump 124 coupled via a waste 201033570 heat pipe 125 to a waste heat source 123 and a feed fluid line 1〇4 of the system 300 (or other fluid line to be heated p waste heat recovery system 301) The waste heat from waste heat source 123 is utilized to preheat the reagent flowing through fluid feed line 104. Waste heat source 123 can be any suitable waste heat source from a liquid or gaseous process or other fab equipment, such as from a heating bath. Liquid chemicals, liquid coolant or gaseous emissions configured for processing chambers in a gaseous process, treatment pump stacks, other chamber equipment (eg, plasma sources, heaters, hot water discharges, etc.), compressed air systems, An air separation compressor, an air compressor, a gaseous or liquid coolant from a weakening device, hot air or liquid coolant from an electronic and/or mechanical device, etc. The heat pump 124 is arranged to align with the waste heat pipe 125. Waste heat The conduit 125 is further coupled to a waste heat source 123 and an exhaust system 129. The exhaust system 129 is, for example, a weakened system or other suitable waste treatment system. The waste heat conduit 125 is typically The gaseous effluent discharged from the waste heat source 123 to the exhaust system 129 is delivered. In some embodiments, the heat pump 124 includes a compressor 126 and a heat pump heat exchanger 128. Although the drawings show separate components, in some embodiments ' The heat pump 124 further includes (e.g., integrated) a heater 12 or a different heater. The operation of the hot fruit is similar to a liquid to water geothermic heat pump. Alternatively, if a heater is required, the heat system 124 may be selectively coupled to a heater (e.g., heater ι2 〇). In some embodiments, compressor 126 is disposed to align with waste heat pipe 125 between waste heat source 123 and heat pump heat exchanger 128. Compressor ι26 15 201033570 can be any device suitable for compressing gaseous effluent. Increasing the pressure of the gaseous effluent can increase the effluent temperature in the waste heat pipe 125 and help improve heat transfer from the heat pump heat exchanger 128. The heat pump heat exchanger 128 can Any heat exchanger suitable for exchanging heat between the spent effluent and the incoming fluid, and may be of any suitable size depending on the actual available space. The heat pump heat exchanger 128 is configured to Heater 12A (if any) The upstream feed fluid line 104 is aligned to preheat the reagent "heat pump heat" before the reagent from reagent source 1〇8 enters processing chamber 102 (or other heated reagent use position). The exchanger 128 generally includes a first side and a second side that are thermally coupled thermally to transfer heat therebetween. The first side of the heat pump heat exchanger 128 is coupled to the feed fluid line. 4 The reagents supplied with the reagent source 1 〇 8 are passed therethrough. The first side of the heat pump heat exchanger 128 is coupled to align with the waste heat conduit for the effluent stream of waste heat source 123 to pass therethrough. In operation, the reagent flowing through the feed fluid line 1〇4 is heated in the hot fruit heat exchanger m by the heat transfer of the waste effluent flowing through the waste heat pipe 125. The waste effluent is condensed by the press 126 before flowing through the heat pump heat exchanger 128 to enhance heat transfer by increasing the temperature of the spent effluent. The heat stored in the waste effluent from the waste *' and the source 123 is transmitted to the reagent supplied to the processing chamber 1G2 through the heat exchanger 128. For example, the temperature of the gaseous effluent discharged by the waste heat source 123 is from about 30 ° C to about 90 ° C. The energy stored in the gaseous effluent can be used to preheat the reagents supplied to the processing chamber 102, thereby reducing or eliminating the power required by the heater 120 16 201033570 to heat the liquid reagent to the desired temperature. In some embodiments, utilizing the heat transferred by the waste heat pipe 125 to preheat the reagents, the energy consumption of the heater 120 can be reduced, and in some embodiments, the heat transferred by the waste heat pipe i can be completely dispensed with using the heater 120 for further heating. At least within the heat pump heat exchanger 128, the feed fluid line 1〇4 and the waste heat pipe 125 contain any process compatible suitable material that facilitates robust heat transfer between the waste heat pipe 125 and the fluid of the fluid line. In some embodiments, the material has a high thermal conductivity (e.g., greater than or equal to about 30 〇 W/mK). In some embodiments, the thermal conductivity may be lower, such as where material compatibility is desired and where a polymer is desired. In some embodiments, 'materials include copper, steel, stainless steel, rhodium-plated steel, titanium, tungsten, high-alloyed alloys, carbon, polymers (eg, polymethylpentene, such as TPX®), polyphenylene sulfide ( Non-limiting examples of PPS), polytetrafluoroethylene (PTFE) and other chemically or crosslinked fluorinated polymers), bismuth, bismuth metal, aluminum, carbon (including crystalline, amorphous and vitreous graphite), quartz, At least one of ceramic, glass, composite, and ceramic and/or glass coating materials. In some embodiments, the material fed to fluid line 1〇4 and/or waste heat pipe 125 is selected based on chemical compatibility with the flowing fluid. As described above, the 'partial waste heat pipe 125 (e.g., the second side of the heat pump heat exchanger 128) is thermally coupled to a portion of the feed stream line 104 (e.g., the first side of the hot pump heat exchanger 128) waste heat The conduit 125 can be coiled around the flow line 104, or thermally coupled to the feed line 104 in any suitable configuration to enhance or maximize the effluent flowing in the waste heat pipe 125 with the incoming fluid line 1 〇4 flows to the heat transfer between the processing chamber 17 201033570::: or, in addition, a portion of the waste heat pipe can be thermally coupled to the test source 108 to assist in transferring heat to the flow pipeline In the embodiment of the reagent β in Fig. 104, as shown in Fig. 3, the heat pump 124 uses a closed loop system containing a heat transfer fluid in the inner conduit of the heat pump 124. A part of the helium conduit constitutes a first heat system having a waste heat pipe 125. The heat exchanger 12, another portion of the inner conduit forming portion has a first heat pump heat exchanger 128, which is fed into the fluid line 1〇4. In operation, the heat pump transmits heat from the waste heat source through the first heat pump heat exchanger 128a. Passed to the heat transfer fluid to evaporate heat The evaporated heat transfer fluid is then compressed and pumped by compressor 126 to second heat pump heat exchanger 128b to transfer heat from the heat transfer fluid to the fluid flowing in feed fluid line 1-4. A circular heat pump configuration can be used for any of the heat pump embodiments. Returning to the processing chamber 102, the effluent line 107 is coupled to the substrate of the processing chamber 102. The substrate of the processing chamber 102 need not be horizontal as in Figure 1. And generally inclined to allow the treatment effluent to flow toward a single location, such as a discharge device disposed in the substrate and connected to the effluent line 107. The effluent from the processing chamber 102 flows, for example, through the effluent line 1〇7 The effluent system 110 processes and/or treats the effluent. In some embodiments, the treatment effluent is collected, for example, in a tank or intermediate storage tank 105 (which is disposed in the effluent line 107). In some embodiments, the treatment The effluent may be drawn from the intermediate storage tank 1〇5 and passed through a heat exchanger (heat pump heat exchanger i 28 or a different heat exchanger) to further preheat the reagents fed into the fluid line 104, as will be explained with reference to Figure 4 Below. 18 20103 The 3570 processing system 300 further includes a controller 122 coupled to the processing chamber 110 for controlling its operation and/or controlling one or more other components of the processing system and/or the waste heat recovery system 301. The controller 122 Generally, a central processing unit (CPU), a memory, and a support circuit are included (the controller 122 is not shown to control the processing chamber 1〇2 and various chamber components directly or by using individual controllers (not shown) associated with the chamber components. In some embodiments, other control elements may be used, such as an industrial controller without cPU. During operation, reagents flow from reagent source 108 into feed fluid line 1〇4 and are heated by heat pump 124 to a desired temperature, waste heat source. The 123 effluent effluent is pressurized by compressor 126 to increase the effluent temperature ◊ pressurized effluent stream to the second side of heat pump heat exchanger 128 and transfer heat to the reagents fed to fluid line 104. The preheated reagent then flows into the processing chamber ι2 and through the nozzle 118 to the substrate π4. The reagent reacts with the substrate 114 or the material disposed thereon and/or becomes a contaminant, thereby forming an effluent. The effluent flows through the effluent line 1 〇 6 at the substrate of the chamber 丨〇 2 and flows to the effluent system 11 〇. Depending on the situation, if the reagent requires additional heating, the heater 丨20 can be used to further preheat the reagent before entering the processing chamber 102. FIG. 3 has an alternative embodiment of the processing system. For example, the system 3 can be exemplified and configured for processes other than the liquid process, such as a gaseous process (where the reagent is a gaseous reagent). In addition, the configuration of the waste heat recovery system 301 can be Demonstrated and configured for other suitable arrangements, for example, the waste heat recovery system 301 does not require configuration to handle gaseous effluents. For example, the waste heat recovery system 301 is a closed loop system for removing heat, such as a refrigeration unit 19 201033570 (refrigeration unit) or other closed loop system employing a heat pump. For example, the thermal treatment side of the 'closed loop system can be coupled to the feed fluid line 104 °. Additionally, embodiments of the systems 100, 300 described above can be combined into a processing system. An example system combination will be described below in conjunction with Figures 4-5. For example, Figure 4 illustrates a semiconductor processing system in accordance with some embodiments of the present invention. For example, semiconductor processing system 400 includes a processing system 1 and a processing system 450. The semiconductor processing system 400 can be a partial example production line' and the production line can include a plurality of inline processing systems, and is not limited to the two systems. As shown in Fig. 4, a second processing system 45 is coupled from the feed fluid line 104 to the processing system 1 to assist in preheating the reagents before the reagents enter the processing chamber 102. Similar to the above concept, the processing system 400 facilitates the recovery of waste heat from the two processing systems 100, 45. Processing system 100 is substantially described above. As shown in FIG. 4, the processing system 100 includes a heat exchanger 103 that is arranged to align with the feed fluid line 104 on the heater 12 to facilitate flow of reagent from the reagent source 1〇8. Preheat the reagent before the device 120. Semiconductor processing system 450 illustrates a particular example of a secondary system that is part of the waste heat recovery system 301 described above. The semiconductor processing system 45A includes a processing chamber 452 that is configured for a gaseous process. Processing chamber 452 includes the gaseous processing chamber of the above examples. Additionally, processing chamber 452 can include any system suitable for use in a gaseous process, such as a compressed air system, abatement system, an air separation compressor, and the like. The processing system 450 includes a heat pump 454 that is configured to align with the feed fluid line 104 upstream of the heater 20 201033570 120 (if any) to preheat the reagent before the reagent from the reagent source 108 flows into the processing chamber 102. . Heat pump 454 typically includes a compressor 456 and a heat pump heat exchanger 458. Compressor 456 can be positioned to align with discharge line ι6 of processing chamber 452. The compressor 456 can be any compressor suitable for pressurizing the gaseous effluent, such as the compressor 126 described above » the heat exchanger 458 is disposed, for example, downstream of the compressor 456 such that the gaseous effluent discharged from the chamber 452 will enter the heat exchange In front of the 458, the compressor 456 is entered. Heat exchanger 458 is substantially similar to heat pump heat exchanger 128 except that heat exchanger 458 includes components of system 1 (partially fed fluid line 104) and components of system 450 (partial discharge line 160). The heat pump heat exchanger 458 includes a first side and a second side that are thermally coupled thermally to transfer heat therebetween. The first side of the heat pump heat exchanger 458 is engaged and aligned with the feed line 1〇4 for the reagent supplied by the reagent source 108 to flow therethrough. The second side of the thermal heat exchanger 458 is coupled to align with the effluent line 460 of the processing chamber 452 for the pressurized gaseous effluent of the processing chamber 452 to flow therethrough. The gaseous effluent from the processing chamber 452 or the heat stored in the liquid coolant is passed through the heat pump 454 to the reagent supplied to the processing chamber 1〇2. For example, in some embodiments, the temperature of the gaseous effluent or liquid coolant discharged after processing chamber 452 is from about 30 ° C to about 300 ° C. The discharged gaseous effluent or liquid coolant is pressurized by compressor 456 to increase the temperature. Thus, the heat stored in the pressurized gaseous effluent can be used to preheat the reagents supplied to the processing chamber 102, thereby reducing the power required by the heater 12 to heat the liquid 21 201033570 reagent. In some embodiments, the energy consumption of the heater 120 can be reduced by preheating the liquid reagent with heat transferred from the gaseous effluent line 460. When combined with heat recovered via heat exchanger 103, combining heat from gaseous effluent line 460 and effluent line 106 may further reduce energy consumption of heater 120 and eliminate the need for heater 120 〇 effluent line 460 is coupled to the substrate of processing chamber 102. Processing Chamber • The effluent from chamber 452 flows, for example, through the effluent line! 60 to the effluent system 462' to treat and/or treat the effluent. The effluent system 462 includes, for example, a weakening system or other system suitable for handling effluent. The effluent line 460 contains any suitable material that facilitates robust heat transfer between the gaseous effluent and the fluid line 104. In some embodiments the material has a high thermal conductivity (e.g., greater than or equal to about 300 W/mK). In other embodiments, the thermal conductivity may be lower, such as where the polymer compatibility is desired and the polymer is used. In some embodiments, the material includes materials used in conjunction with the venting line 106. In some embodiments, it is selected based on chemical compatibility with a gaseous process such as an etching process or other process that produces corrosive effluents. The material of the effluent line 460. As described above, the 'partial effluent line 460 (e.g., the second side of the heat exchanger 458) is thermally coupled to a portion of the feed fluid line 1〇4 (e.g., the first side of the heat pump heat exchanger 458). . For example, the effluent line 460 can be coiled around the fluid line 104, or thermally coupled to the feed fluid line 104 in any suitable configuration, such that the effluent flowing in the effluent line 460 is in the incoming fluid. The heat transfer between the tanning agents flowing in line 104 and flowing to processing chamber 22 201033570 is maximized. Alternatively or in addition, a portion of the effluent line 460 is thermally coupled to the reagent source 1 〇 8 to aid in the transfer of heat to the reagents in the fluid line 104. Processing system 450 further includes a controller 464 coupled to processing chamber 452 for controlling its operation and/or controlling one or more other components of processing system 45A. The controller 464 is substantially identical to the controller 122 and controls the process chambers 1 to 2 and various chamber components either directly or with individual controllers (not shown) associated with the chamber components. In addition, processing system 400 further includes a central controller (not shown) for controlling the components of each processing system (e.g., processing system 100, 450) either directly or with system-related individual controllers (e.g., controllers 122, 464). In operation, reagents flow from reagent source 108 into the feed fluid line 1〇4. In some embodiments, the reagent is first heated by heater 120 to a desired temperature. The reagent then flows into the processing chamber 1〇2 and through the nozzle 118 to the substrate reagent reacts with the substrate 114 or the material disposed thereon and/or Φ becomes a contaminant, thereby forming an effluent (eg, the first effluent stream via The effluent line 106 is disposed at the base of the chamber 1 〇 2. The effluent line 106 passes heat from the effluent through the heat exchanger 103 to the reagents in the fluid line 104. Similarly, the second effluent flows through The line 460 exits the chamber 452 and follows the path to the heat pump 454. The second effluent is passed through the retractor 456. The effluent line 460 passes the heat pump heat exchanger 458 to transfer the pressurized second effluent. The liquid reagent to the fluid line 104. The reagent that is warmed by the heat of recovering the first and second effluents is only required to supply 23 201033570 less energy before entering the processing chamber 1 。 2 . Thus, recovering the heat of the effluent can reduce the energy processing system of the processing system 400. There is still a first generation embodiment. For example, the processing system 100

Optionally, the hot-roller II hot-replacer 103 is not included, but only the heat pump 454 of the processing system 45〇 is preheated. In another alternative embodiment, if the waste heat recovery system (such as

The heat exchange H 1G3 and heat pump 454) are sufficient to preheat the delivery of the operating temperature to selectively remove the heater 12 (). In some embodiments, heat exchanger 103 is located downstream of heat pump 454. Processing system 400 has other alternative embodiments. For example, the processing chambers 102, 452 can be wet stations, or both configured for a gaseous process. Figure 5 illustrates a semiconductor processing system in accordance with some embodiments of the present invention. For example, the semiconductor processing system 5 is similar to the processing system 1 and the processing system 450' except that the waste heat from the two processing systems passes through the shared heat exchange device 502 » similar processing system 400, which may be part of the example production line 'And the production line may further include a plurality of inline processing systems, and is not limited to the two systems. As indicated by circle 5, heat exchange device 502 is coupled from feed fluid line 104 to processing system 1〇〇, 45〇 to assist in preheating the reagent before it enters processing chamber 102. Similar to the above concept, the processing system 400 facilitates the recovery of waste heat from the two processing systems 100,450. The heat exchange device 502 is detailed in Figure 5A. The heat exchange apparatus 502 includes substantially all of the components of the heat exchanger 103 in a single enclosed area and the heat pump 454 of the above system. Specifically, the heat exchange device 5〇2 includes a first side containing a portion of the feed fluid line 1〇4 and includes a plurality of heat exchanges 24 201033570 exchange conduits (such as the first heat exchange conduit 5 shown in FIG. 5) 58 and a second side of the second heat exchange conduit 503). A plurality of heat exchange conduits can be considered as separate heat exchangers having a uniform side for liquid reagent flow therethrough or as a single heat exchanger having a plurality of conduits on one side for waste thermal fluid to flow therethrough. The compressor is disposed in at least one heat exchange conduit (compressor 556 is shown coupled to align with first heat exchange conduit 558). As with the hot fruit and heat exchanger described above, the first side of the heat exchange device 502 is thermally coupled thermally

To all of the heat exchange conduits disposed on the second side to help transfer heat from the second side (waste effluent) as efficiently as possible to the first side (reagent). In operation, processing system 500 is substantially similar to the operation of processing system 400 described above. As described above, the waste heat of the effluent of each of the systems 100, 450 is thermally coupled along with the common portion of the feed fluid line 104 to the incoming reagent from the reagent source 1〇8, which is fed to the fluid line 1〇4. The shared portion constitutes the first side of the heat exchange device 502. Therefore, by allowing the effluent to flow through the heat exchange conduits 503, 558, the waste heat from the two systems 1 〇〇, 450 can be simultaneously transferred to the feed reagent. Alternatively, depending on the duty cycle of each processing system, each of the heat exchange conduits 503, 558 may be alternately used, and waste heat may be transferred to the incoming reagent. Waste heat can be transferred to the delivery reagent in accordance with any suitable protocol as specified by the duty cycle of the various systems 100, 450. For example, if the processing cycle of the processing system 45 is twice that of the system 1GG, the heat exchange conduit (5) is used to preheat the seven slaves from the reagent source 108, and the number of times the herbicide is reached is about the heat exchange conduit. 503 is twice as frequent. Additionally, any of the operational schemes of system 5 described above are used with the configurable system 400. 25 201033570 System 5 There are alternative embodiments. For example, the processing chambers 〇 2, 2 may be wet stations. In some embodiments, the chemicals for each job are chemically compatible, and the discharge lines 1〇6, 46〇 can be fed into a common line (not labeled). The common line, for example, acts as a second side of the common heat exchanger, which replaces the individual second side of the heat exchange conduits 5〇3,558. In addition, the shared line is fed into a common exhaust system that replaces the individual exhaust systems 110, 462. Other alternative embodiments are also possible. For example, the two processing chambers φ ι 2, 452 can be configured for a gaseous process. In some embodiments, system 500 can be configured in a similar configuration as described above if the gaseous reagents supplied to each chamber are chemically compatible. Moreover, in any of the embodiments described, if the waste heat effluents from different sources are compatible, they may be brought together before they enter the shared heat pump. The above described embodiment of the processing system generally describes preheating the reagent prior to entering the processing chamber. However, other devices may also benefit from the present invention. For example, an ion exchanger (e.g., for producing ultrapure water (e.g., a liquid reagent)) can benefit from the present invention. For example, prior to flowing the reclaimed water through the ion exchanger, the apparatus can preheat the reclaimed water using heat from the treated effluent. For example, the ionic species collected by removing the exchanger's reclaimed water can be used to clean or regenerate the ion exchanger. In some embodiments, the apparatus described above can be used to recover waste heat to drive a halogenated polymer (eg, a polymer incorporating a halogen atom to attach its backbone) to a sub-atmospheric acid distillation/purification system and/or a resin base (resin base sentence) The roller reducer 'recovers waste acid (such as hydrofluoric acid (HF), hydrogen acid (HC1), acid (HNO3) or other waste chemicals), and returns it to the process for use as a reagent or cleaning solution. 26 201033570 A method of processing a substrate will be described below. The method of the present invention can be used in the above described processing system of the present invention, although other processing systems can also benefit from the method of the present invention. Figure 6 is a diagram of an embodiment of the present invention, for use in accordance with some embodiments of the present invention, A flow diagram of a method 600 of recovering heat from the treatment of the effluent. Method 6 is described below in conjunction with systems shown in Figures 2, 4, and 5. The method begins with step 602, which provides coupling to The processing chamber of the heat exchanger, such as the upper processing chamber 1〇2 and the heat exchange stomach 1〇3. As described above, the heat exchanger 1 〇3 has the first liquid reagent flow to the processing chamber 丨〇2 Side (as aligned with the incoming flow line 1〇4) The second side of the supply chamber 1 2 is vented out (e.g., aligned with the effluent line 1 〇 6 and the effluent line 1 〇 6 can be thermally coupled to the raft line 1 in any suitable configuration. 4. The heat recovered from the effluent is added prior to disposal in the effluent system 110. In some embodiments, the effluent may flow into the intermediate storage tank 1〇5 and then flow from the intermediate storage tank 105 to the heat exchanger ι 3 Two sides. Φ In step 604, the liquid reagent is preheated using heat exchanger 103. For example, by diffusion into the material of effluent line 106 to recover heat from the effluent. This material may include any of the above. The high thermal conductivity material. From the effluent line 106, the heat is diffused into the fluid line 1〇4 and is connected along the heat to the partial stream of the effluent line 1〇6, and finally flows to the flow. Or a reagent for standing. The liquid reagent includes, for example, water, ultrapure water, deionized water, etc., which is used, for example, to rinse the substrate U4 during a wet chemical or wet chemical cleaning process. Further, the liquid reagent may include any Before the processing chamber (10) is used 27 201033570 Suitable for chemical and/or chemical solutions. For example, suitable chemicals and/or chemical solutions include chemicals used in wet stripping or wet etching processes, such as hydrogen acid (HC1), hydrofluoric acid (HF). , ammonium hydroxide (ΝΗ4〇Η), hydrogen peroxide (Η2〇2), phosphoric acid (η3ρο4) or sulfuric acid (h2so4), etc. Although the above examples are related to wet etching, wet stripping and wet chemical cleaning processes' It can be applied to any other hydrazine treatment using the liquid reagent. The temperature of the liquid reagent prior to heat transfer is about room temperature, or between about 15 ° C and about 180 ° C. The heat recovered from the effluent The liquid reagent can be preheated to a temperature of from about 3 ° C to about 180 ° C. In step 606, the liquid reagent is preheated to a desired temperature using, for example, a heater 12A. For example, heater 12 〇 heats the reagent up to about 18 〇 C, or between about 35 C to about 180 ° C. Once the liquid reagent is heated to the desired temperature, the heated liquid reagent is flowed into the processing chamber 1 , 2, such that the method 600 is substantially terminated or 'Fig. 7 is for recycling the effluent from the treatment according to some embodiments of the present invention. The flow of the hot method 700 is flawed. Method 700 will be described in conjunction with Figure 2, but it can also be used in conjunction with systems 400, 500 shown in Circles 4-5. In step 702, the liquid reagent is passed through a first side of heat exchanger 1〇3 (as aligned with feed fluid line 1〇4) to preheat the liquid reagent. In step 704, the preheated liquid s formula is heated to a desired temperature by heater 120. In step 706, the heated liquid reagent is flowed into the processing chamber 102, wherein the heated liquid test is used for liquid processing, such as wet chemical etching of the substrate 1丨4. Heated 28 201033570 The liquid reagent becomes a contaminant and/or reacts with the substrate 114 to form an effluent. The effluent retains at least a portion of the heat in the heated liquid reagent. In step 7〇8, the effluent is passed from the processing chamber 1〇2 through the second side of the heat exchanger 1〇3 (as aligned with the effluent line 1〇6) to preheat the heat exchanger. A liquid reagent on the first side of 103 (as in step 71). In some embodiments, the process effluent flows into the intermediate sump j〇5 and then from the intermediate sump 105 to the second side of the heat exchanger 〇3. • Figure 8 is a flow diagram of a method 800 for recovering heat from disposal of an effluent, in accordance with some embodiments of the present invention. Method 8 can be used in conjunction with any of Figures 3-5, and is generally illustrated with reference to Figures 4-5. The method 800 generally begins at step 8A2, which provides a source of waste heat, such as the processing chamber 452 described above with a heat pump 454. As noted above, heat pump 454 includes compressor 456 and heat pump heat exchanger 458. Compressor 456 is used to pressurize the effluent from chamber 452 or the heat transfer fluid flowing through the internal conduit of heat pump 454. Pressurization of the effluent or heat transfer fluid will increase the temperature of the effluent or heat transfer cut in accordance with the φ ideal gas law behavior. The heat pump heat exchanger 458 has a first side for the liquid reagent to flow to the second processing chamber (e.g., the processing chamber 102) (e.g., aligned with the feed fluid line 1〇4) and a effluent stream for processing The second side of chamber 452 (as aligned with effluent line 460). The effluent line 460 can be thermally coupled to the fluid line 104 in any suitable configuration to maximize the heat recovered from the effluent prior to disposal in the effluent system 462. Alternatively, the hot pump 454 can be equipped with an internal heat transfer circuit for use in the first portion of the heat pump (transferring heat from the waste heat source to the heat transfer fluid) and the second portion of the heat pump (transferring heat from the 29 201033570 heat transfer fluid to The heat transfer fluid is circulated between the reagents in the fluid line. In step 804, the first effluent is discharged from a source of waste heat (e.g., processing chamber 452). The first effluent can be in gaseous form and is, for example, a process gas or gaseous by-product of a semiconductor process (e.g., a silver engraving process, a deposition process, or any suitable process for producing an effluent of recoverable waste heat). Alternatively or additionally, waste heat from other sources of the processing system may be drawn, for example, from a compressed gas system, an air separation compressor, a pump, an electronic and/or mechanical device, a reduced device, and the like. Alternatively, waste heat can be drawn by liquid coolant. Optionally, in step 8〇6, the first effluent is pressurized. For example, compressor 456 compresses the first effluent to increase the temperature of the first effluent. Increasing the temperature by pressurization helps to improve heat transfer between the first effluent and the reagent to be heated. Alternatively, the first effluent may be passed through a heat pump in a path to transfer heat to the heat transfer fluid, which is then pressurized and pumped through a heat pump to a portion of the reagent used to heat the fluid line. ❹ In step 808, the pre-reduction agent is used by transferring waste heat from the first effluent to the reagent. For example, the reagent may be placed or flowed through the face to the processing chamber. (eg, the processing chamber 1〇2) is fed into the fluid line called [hot side exchange ^ 458 [side or (four) to part of the hot fruit 454 ). The reagent can be preheated by passing the waste heat through or through the first effluent of the partial discharge pipe #_ (e.g., the second side of the heat pump heat exchanger 458 to the partial heat pump 454). The reagents include, for example, water, ultrapure water, deionized water, and the like, which are used, for example, to rinse the substrate 114 during a concentrated chemical etching or wet chemical cleaning process. In addition, the liquid reagent may comprise any suitable chemical and/or chemical solution that requires 30 201033570 heating prior to use in the processing chamber s 1 〇 2, for example, suitable chemicals and/or chemical solutions including for wet stripping or wet An acid, a base, and/or a solvent for an etching process or a wet cleaning process, such as hydrogen acid (HC1), hydrofluoric acid (HF), ammonium hydroxide (ΝΗ4〇Η), hydrogen peroxide (Η2〇2), phosphoric acid ( Η3ρ〇4) or sulfuric acid (HzSO4), etc. While the above examples are related to wet etching, wet stripping, and wet chemical cleaning processes, the invention is applicable to any other substrate processing using the liquid or gaseous reagents.

In some embodiments, for example, the temperature of the reagent prior to heat transfer is about room temperature, or about 15 degrees. 〇 to about 3 〇. Between 〇. Waste heat recovery of the effluent Preheat the reagent up to about 30 ° C to about 180 ° C. In some embodiments, as shown in step 814, the heated reagent is then flowed into the processing chamber for use. Once the heated reagent is provided to the processing chamber 102 or some other target, the method 8 is substantially complete. However, there are additional embodiments of the method 800. For example, if the waste heat from the pressurized first effluent is insufficient to preheat the reagent to the processing temperature, the heater 120 can be used to further preheat the reagent to the desired processing temperature. In addition, waste heat can be recovered from other sources and combined with waste heat recovered from the first effluent to preheat the reagents. For example, after treatment in the processing chamber 1〇2, the reagent is converted to a second effluent' which is discharged from the processing chamber 胄1〇2. For example, the second effluent can include reagents and by-product materials such as materials from the substrate to be treated. A second effluent, consisting in part of the heated reagent, has recoverable waste heat. Processing chamber 102 is in some embodiments. As shown in step 810, the second effluent second effluent has recyclable waste heat to preheat 31 201033570 The reagent to be used in the processing chamber 102. For its part, in step 812, the reagent for processing chamber 1〇2 is further preheated by transferring waste heat from the second effluent to the reagent. In some embodiments, the reagent is preheated by passing waste heat from the second effluent through a heat pump. In some embodiments, the reagent is preheated by passing waste heat from the second effluent through a heat exchanger. In some embodiments, the reagent may be placed or flowed through a portion of the feed fluid line 1-4 that is coupled to the portion of the φ processing chamber (eg, processing chamber 1〇2) (eg, the first side of heat exchanger 103) side). The reagent can be preheated by passing waste heat through the second effluent flowing through or resting on a portion of the discharge line 16 (e.g., the second side of heat exchanger 1〇3). Heat exchanger 103 can be used in conjunction with, alternately or in place of heat pump 458 to preheat the reagent. As described above, the heat exchanger 1〇3 may be located downstream (not shown), upstream (Fig. 4) or superimposed on the heat pump 458 (similar to Fig. 5). The waste heat from the second effluent does not need to be recycled to heat the reagents into the same place • the chamber (e.g., the processing chamber 1〇2) (the second effluent is thereby produced). For example, waste heat from the second effluent can be used to preheat reagents used in different processing chambers (similar to Figures 4-5). Methods and apparatus for recovering heat from the disposal of effluent have been disclosed herein. The method and apparatus of the present invention help to reduce the energy consumption of a semiconductor or other processing system by preheating the reagents entering the processing system by utilizing the heat of the effluent. The reduction in heat in the treatment effluent may be more conducive to subsequent treatment of the treatment effluent, such as attenuation. While the present invention has been disclosed by way of example, the scope of the present invention is defined by the scope of the appended claims. Prevail. BRIEF DESCRIPTION OF THE DRAWINGS In order to make the above-described features of the present invention more apparent and easy to understand, reference may be made to the accompanying embodiments. It is to be understood that the particular embodiments of the invention are not to be construed as limiting the scope of the invention. . Figure 1 illustrates a processing system in accordance with some embodiments of the present invention. Figure 2 illustrates a semiconductor processing system in accordance with some embodiments of the present invention. 3-3A continues with a semiconductor processing system in accordance with some embodiments of the present invention. 喾 FIG. 4 illustrates a semi-guide boat processing system in accordance with some embodiments of the present invention. Figure 5 illustrates a semiconductor processing system in accordance with some embodiments of the present invention. Figure 5A illustrates a heat recovery apparatus in accordance with some embodiments of the present invention. Figure 6 is a flow diagram of a method for recovering heat from a treated effluent in accordance with some embodiments of the present invention. Figure 7 is a process flow circle for recovering heat from the treatment 33 201033570 effluent, in accordance with some embodiments of the present invention. Figure 8 is a process flow circle for recovering heat from the treatment of effluent, in accordance with some embodiments of the present invention. To facilitate understanding, the same component symbols in the various figures represent similar elements. The drawings are not drawn to scale and are simplified for illustration.

[Main component symbol description] 1 Processing system 2 Input 3 Chambers 4, 5, 6 Waste heat source 7 Heat pump 8 Heat exchanger 9 Heater 10, 11 Effluent system 100 Processing system 102 Chamber 103 Heat exchanger 104, 106- 107, 160 Line 105 Sump 108 Reagent source 110 Effluent/discharge system 112 Support 114 Substrate 116 Recess 118 Nozzle 120 Heater 122 Controller 123 Waste heat source 124 Heat pump 125 Pipe 126 Compressor 128 ' 128A-b Heat exchanger 129 Emissions System 300, 301 System 400 '450 System 452 Chamber 454 Heat Pump 456 Compressor 34 201033570 460 Line 464 Controller 502 Heat Exchange Equipment 556 Compressor 602 ' 604 ' 606 Step 458 Heat Exchanger 462 Effluent / Emission System 500 System 503 558 conduit 600 ' 700 ' 800 method 702 ' 704, 706, 708, 710 steps 802, 804, 806, 808, 810, 812, 814 steps

35

Claims (1)

201033570 VII. Patent Application Range: 1. A substrate processing system comprising: a processing chamber configured for a liquid process; a first heat exchanger having a first side and a second side, configured Transferting heat between the first side and the second side, wherein the first side is configured to flow a liquid reagent therethrough and to the processing chamber ' and wherein the second side Arranged to pass a first-rate outlet from the processing chamber therethrough; and a heater is disposed in line with the first side of the first heat exchanger to allow the liquid reagent to enter The liquid reagent is heated before the processing chamber. 2. The system of claim 1, further comprising: an intermediate storage tank disposed between the processing chamber and the first heat exchanger to collect primary fluids from the processing chamber and The effluent is pumped to pass the effluent through the first heat exchanger. 3. The system of claim 1, further comprising: a first waste heat source 'to provide a first waste fluid storing a waste heat therein; and a heat pump coupled to the first waste heat source and Between an incoming fluid line that causes the liquid reagent to flow into the processing chamber 'the heat pump configuration to transfer heat from the first waste 36 201033570 heat source to the feed fluid line The liquid reagent. 4. The system of claim 3, wherein the heat pump is disposed between the heater and the first heat exchanger. 5. The system of claim 3, wherein the waste heat source comprises one or more of the following: a processing chamber configured for a liquid or gaseous process, a compressed air system, an air separation compressor, a An air compressor, a liquid coolant or a gaseous effluent from a weakening device, or a liquid coolant or a hot air from an electronic device or a mechanical device. 6. The system of claim 3, further comprising: a second waste heat source 'to provide a second waste fluid with a waste heat inside to the heat pump' to transfer the waste heat stored therein to The liquid reagent fed into the fluid line. 7. The system of claim 1, further comprising: a first waste heat source 'to provide a first waste fluid storing a waste heat therein; and a heat pump having a compressor and a second heat An exchanger, wherein the compressor is coupled to be aligned with the first waste heat source and a first side of the second heat exchanger, and wherein a second side of the first heat exchanger is configured to The liquid reagent is passed therethrough and passed to the processing chamber. The system of claim 7, wherein the first side of the heat exchanger and the second side of the second heat exchanger are coincident. 9. A substrate processing system comprising: a waste heat source for providing a first waste fluid having a waste heat stored therein; a first processing chamber having a reagent source coupled to the first processing chamber And configured to provide a reagent to an inner volume of the first processing chamber; and a heat fruit 'to be consumed between the waste heat source and a feed reagent line, and the feed reagent line system The internal volume of the reagent flow into the processing chamber is configured to transfer heat from the waste heat source to the reagent in the feed reagent line. 10. The system of claim 9, further comprising: a heater disposed in alignment with the heat pump to further heat the reagent prior to entering the first processing chamber. 11. The system of claim 9, wherein the waste heat source comprises one or more of: a processing chamber configured for a liquid or gaseous process, a compressed air system, an air separation compressor, a An air compressor, a liquid coolant from a weakening device or a gaseous discharge 38 201033570, or a liquid coolant or a hot air from an electronic device or a mechanical device. The system of claim 9, wherein the first processing chamber is configured for a liquid process, and wherein the waste heat source comprises a second processing chamber configured for a gaseous process, and the The first spent fluid is made from a gaseous effluent from the second processing chamber. The system of claim 12, wherein the hot fruit further comprises: a compressor and a first heat exchanger, wherein the compressor is coupled to the waste heat source and the first a first side of the heat exchanger is aligned, and before the first waste fluid flows through the first side of the heat exchanger, the first waste fluid is added and one of the first heat exchangers The second side is configured to flow the reagent therethrough. 14. The system of claim 9, further comprising: a heat exchanger having a first side and a second side, the heat exchanger being configured to the first side and the second side Transferring heat between the sides, wherein the first side of the heat exchanger is configured to flow the reagent therethrough and to the first processing chamber, and wherein the second side of the heat exchanger A second waste fluid discharged from the first processing chamber is configured to flow therethrough. 39 201033570 15. The system of claim 14, wherein the system further comprises: a heater disposed in alignment with the heat pump and the first side of the heat exchanger to allow the reagent to enter the The reagent is heated before the first processing chamber. 16. A method of processing a substrate, comprising: flowing a liquid reagent through a first side of a heat exchanger to preheat the liquid reagent; and utilizing a heater to heat the preheated liquid Resolving the reagent to a desired temperature; flowing the heated liquid reagent to a processing chamber configured for the liquid processing; and passing a process effluent from the processing chamber through the first side of the heat exchanger to Preheating the liquid reagent flowing through the first side of the heat exchanger. The method of claim 16 further comprising: flowing the process effluent into an intermediate sump; and flowing the process effluent from the intermediate sump to the second side of the heat exchanger. 18. A method of processing a substrate, comprising: flowing a reagent through a heat pump coupled to a waste heat source to transfer heat from the waste heat source to the reagent to heat the reagent; and 40 201033570 The heated reagent flows to a processing chamber to process the substrate. 19. The method of claim 18, wherein the waste heat source comprises one or more of: a liquid or gaseous effluent discharged from the same or a second processing chamber, a compressed air system, - air A compressor, an air compressor, a liquid coolant or a gaseous effluent from a weakening device, or a liquid coolant or a hot air from an electronic device or a mechanical device. 20. The method of claim 18, further comprising: further heating the heated reagent to a desired temperature using a heater disposed between the heat pump and the processing chamber. 21. The method of claim 18, further comprising enclosing the reagent through a first side of a heat exchanger, the heat exchanger Aligning with the heat pump; and passing the first-stage venting effluent from the first processing chamber through a second side of the heat exchanger to heat the flow through the heat supply The reagent on one side. 41