201032140 六、發明說明 【發明所屬之技術領域】 相關於本申請案之發明，係關於卡片、紙幣、證券類 等容易被僞造，有必要進行真僞認證的對象物之構造及供 認證該對象物的真僞之用的晶片及其製造方法。 【先前技術】 Φ 今日亦被稱爲信用卡社會，有很多卡片上市流通，還 有銀行的現金卡、信用卡公司的信用卡等關於持有者的財 產之卡片、有價證券之預付卡及駕照、健康保險證、護照 等關於身份證明的卡片被廣泛使用。 相關於財產的卡片及有價證券之卡片的大部分，是在 設於表面或背面的磁條上寫入必要的資訊，而使用 ΑΤΜ(自動提款機，Automatic Teller's Machine)等自動機 械或手動讀取裝置，由磁條讀取磁性資訊，而執行各種處 理。 圖1 (a)所示者，係現行之現金卡之例。於此圖，1爲 塑膠等所構成的現金卡本體，於其表側被形成有記錄著資 訊的磁條2及顯示現金卡的插入方向之箭頭3。又，雖然 圖示省略，但必要事項以浮雕（emboss)文字記載著。 被寫入磁條的資訊可以使用被稱爲側錄器（skimmer) 的裝置容易讀取，所以會被製作出僞卡，產生被盜刷卡的 損害。 作爲其對策，有使用內藏半導體記憶體之1C卡，作 -5- 201032140 爲磁卡的替代，開始普及於銀行等。 然而’即使是此1C卡也可能被讀取保存於記憶體的 資訊’在進行下苦工與勞力之僞造的場合，不能說是絕對 » 安全。而且，1c卡與磁卡相比昂貴很多，無法期待迅速 的普及。 銀行的提款卡的場合，僅可於1個國家中使用即可， 而信用卡的場合必須在外國也可以使用，要把世界上使用 中的所有磁卡信用卡統一規格置換爲1C卡是事實上不可 能的事。 而且’在提款卡與信用卡被浮雕加工設有持有者名字 等資訊’這些資訊也用於磁性資訊，所以浮雕資訊成爲製 作僞卡的線索。 這些磁卡或1C卡遺失或遭竊的場合，持有者容易發 現該事實’但是在遭竊後又回到手上的場合，特別是在沒 有留意到遭竊下被返還的場合，容易發生僞卡盜刷導致的 損害。 不是藉由防止卡片的僞造所致之非法使用，而作爲判 定卡片使用者是否爲合法的手段，到目前爲止採用的是4 位數字構成的密碼。但此密碼常常被使用可以類推的號 碼，所以迄今也發生了許多被害案件。最近出現了不採用 類推而是藉由盜錄等手段來窺視密碼，因此根據密碼來防 止非法使用，變得極爲困難。 爲了防止僞卡導致損害，利用圖案辨識技術之生體認 證（生質，biomatrix)技術有一部分被採用。作爲生體認證 201032140 技術之代表，有虹膜認證、指紋認證、掌紋認證、手指靜 脈認證、手掌靜脈認證、手指甲靜脈認證，其中除了虹膜 認證以外之認證分爲接觸型與非接觸型，任一種都需要預 先登錄圖案（pattern)，圖案之登錄很花時間，認證也花時 間，所以運作成本變大。 在接觸型的場合必須要直接接觸於檢測裝置，會有衛 生上或生理上產生嫌惡感的問題。此外，認證部分受傷的 φ 場合，或者是最慘的場合當認證部分失去的場合，生體認 證是不可能的。此外，於認證過程只進行部分的認證，所 以並不能說是萬全之策。 此外，只有卡片持有人才可使用的生體認證系統，對 於沒有使用卡片的時間或是卡片處理裝置不在附近而需要 靠代理人來操作卡片的話，是不可能的，這一點對於使用 者而言是不便的。 作爲防止僞造之一個手段，係在信用卡、預付卡、紙 〇 幣' 證券類等安裝於塑膠形成凹凸之浮雕全像（embossed Hologram，或稱「壓印式全像片」）。因爲要複製此浮雕 全像是非常困難的，所以要僞造帶有浮雕全像的卡片類在 事實上是不可能的，在現在的使用型態人僅在一瞥下進行 讀取，所以使用類似的浮雕全像僞造卡片來使用是可能 的。 與卡片同樣頻繁被僞造，其損害無祛忽視的還有仿冒 的名牌商品。仿冒名牌商品有僅看一眼就可以分辨出不是 真品之物，其中亦有製作精巧’很難分辨出是否爲真品之 -7- 201032140 物。 此外’在部分地區對於仿冒名牌商品是非法物之認識 很稀薄，即使知道是仿冒商品還是繼續流通。如這樣仿冒 商品在網際網路上不透過流通機構直接販賣給消費者的情 形近年來逐漸增加。 此外’改變贓車的車體號碼，作爲非失竊車輛輸出至 海外的事件也有發生過。 爲了對應這樣的情形，真品的製造者或販賣者，製作 @ /添附限於該真品的證明書而交付給購入者，但亦有連該 證明書也是僞造的情形。 此外，藉由對真品安裝全像片那樣不易複製的標籤， 雖容易辨認其爲真品，但是全像片的複製只是困難而已， 並非不可能。 認證晶片藉由把卡片插入終端裝置的操作者，藉由目 視，亦即藉由感官來確認認證圖案，不是藉由卡片終端裝 置來讀取。 Θ 根據感官之認證，會隨著進行認證的個人的能力而有 所差異，而且即使是同一人也會隨著認證環境及心理狀 態、身體是否舒適等而有所不同，使得1次性的篩選可發 揮效果，但可信賴性很低。 此外，根據感官之認證依存於進行認證的個人的認識 能力，所以只可以用於少數比較單純的圖案。 根據輔助器具之認證，藉由使用放大鏡等擴大器具’ 或是藉由使用產生光學干涉之特殊濾光片’而對細微畫 -8 - 201032140 線、特殊畫線、微小文字、特殊形狀篩查等 具體而言，發光基材、發光層積膜、發 變色墨水、光致變色墨水等，顯示特殊光學 入基材/層積膜/墨水等，而使用特殊瀘光片 輔助器具來進行認證，但這些認證最後還 官，所以可信賴性很低。 根據機器處理之認證，係機械性檢測出 φ 性而進行認證者，作爲檢測對象有磁性、光 具體而言，係把發光材料、磁性材料浴 膜/墨水等，使用檢測機器藉由OCR文字、 性或光學性賦予條碼化的特定資訊，而使月 測機器者。 作爲根據機械處理之認證技術，有替代 訊而利用於媒體中隨機配置無再現性的人工 陣系統（artifact-matrix system) ° ❹ 在人工物測定，利用粒狀物之反光圖案 圖案、高分子纖維之視差影像圖案、纖維之 性纖維之磁性圖案、隨機記錄的磁性圖案、 性圖案、記憶體胞之隨機電荷量圖案、導電 圖案、振動密封之共鳴圖案等偶然形成的圖 卡片之非法使用或成爲僞造對象之事項 給利用者時供給的「卡片記載資訊」、與在 賦予的「卡片本體資訊」。 卡片記載資訊，係對卡片本體在卡片養 來進行認證。 光墨水、熱致 特性的材料混 、紫外線燈等 是依賴人的感 材料具有的特 學特性等。 i入基材/層積 磁性條碼而磁 目磁性/光學檢 生體固有的資 物之人工物方 、光纖之透光 影像圖案、磁 磁條之隨機磁 性纖維之共振 案。 ，有發行卡片 卡片製造步驟 妾行時被印字/ -9 - 201032140 賦予的資訊’相當於關於持有人資訊、有效期限等關於發 行的資訊。 非法使用的代表性型態之竄改，係將卡片記載資訊之 全部或一部分記載資訊予以改寫的行爲，消去正規資訊， 而加上非法資訊。 卡片本體資訊’係由被發行的卡片除去卡片記載資訊 後之卡片自身所具有的資訊，係卡片的物理形狀，主要在 印刷步驟被賦予的背景模樣、下底的印刷層及保護層積層 等附隨於卡片基體的資訊。 僞造，係針對卡片本體進行的不法行爲，複印或模仿 附隨於卡片本體的資訊之圖案或模樣等，製作外觀上近似 的卡片，具體而言係以掃描器讀取賦予於真正卡片券面的 圖案或模樣等，施加加工、修正等，而使用印表機來進 行。 對卡片本體之僞造對策技術，即使限於印刷技術，也 因印刷方式、墨水、印刷模樣之組合而存在多數種，但現 在仍無具決定性者。 於僞造對策之認證方法，大致可分爲根據感官者，根 據輔助器具者，與根據機械處理者。 根據感官之認證’係以視覺、觸覺等人的感官來認證 真僞，根據視覺者有藉由改變本體的色彩、透光、觀看角 度而改變賦予的模樣或色彩等之全像片等，藉由觸覺者， 有檢知被賦予的凹凸形狀、卡片本體的質感檢知等。具體 而言，有商標（l〇g〇)標記、特殊字體、防複製畫線、特色 201032140 墨水、全像騙、光學變化材料' 潛像模樣等’要複製/複 印是困難的，視覺上可容易認證的，浮雕加工、凹凸賦 予、穿孔等、在指感上、視覺上進行認證者。 生質（biomatrix)或人工物方陣（artifact matrix)之類的 圖案之機器讀取，一般是以攝影裝置讀取藉由圖案認識技 術進行認證。因此，有根據複製技術來僞造的可能性。 作爲複印困難的卡片之使用浮雕全像的卡片，例如揭 # 示於日本特公平6-851 02號公報，特開平11 -2 72 836號公 報，特開20-298880號公報，特開20- 1 63530號公報，特 表20-5 1 458 1號公報，特開22-74283號公報，特開22-3473了3號公報及特許2522681號公報。 使用浮雕全像的卡片之構造及製造法被揭示於特開平 11-1879號公報及特開24-117636號公報。 根據本案發明人之 W〇27/072794 號公報及 W027/〇72793號公報’揭示著藉由浮雕全像片認證卡片自 ® 身的真僞之技術。 根據本案發明人之前案之特願27-3 1 28 6 1號，揭示著 藉由組合1C標籤（tag)與浮雕全像片識別真品與僞造品之 用的真僞判別構件及真僞判別方法之發明。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特公平6-85102號公報 [專利文獻2]日本專利特開平11—272836號公報 [專利文獻3]日本專利特開20-298880號公報 -11 - 201032140 [專利文獻4]日本專利特開20- 1 63 5 3 0號公報 [專利文獻5]日本專利特表20_5 1 45 8 1號公報 [專利文獻6]日本專利特開22-74283號公報 [專利文獻7]日本專利特開22-347373號公報 [專利文獻8]日本特許第252268 1號公報 [專利文獻9]日本專利特開平1 1 - 1 8 79號公報 [專利文獻10]日本專利特開24-1 1 7636號公報 [專利文獻ll]WO27/072794號公報 _ [專利文獻12]WO27/072793號公報 【發明內容】 [發明所欲解決之課題] 於本發明，課題在於提供可以對從前泛用的提款卡或 信用卡不施以基本的變更即可附加，可有效利用於僞造品 的判斷之浮雕全像晶片的構造及浮雕全像晶片之製造方 法，更具體而言，係提供 WO27/072794號公報， ⑬ WO27/072793號公報及特願27-3 1 286 1號公報所記載之浮 雕全像晶片之新穎構造及這些之浮雕全像晶片之製造方 法。 [供解決課題之手段] 爲了解決前述課題，本申請案提供以下之手段。 規則地於浮雕全像晶片配置全像坑，進行無規則地進 行呈現全像現象的坑的配置。 -12- 201032140 使使用的光爲複數種。 製作相當於複數浮雕全像晶片的大小之全像晶片原 板，由該原板切出複數之浮雕全像晶片。 散布未硬化之樹脂，使其硬化。 製作浮雕全像晶片製造用壓模，使用該壓模製造浮雕 全像晶片。 φ [發明之效果] 利用光的干涉之浮雕全像片具有立體構造，所以除了 由原型直接製造複製品以外是無法拷貝的。 此外，根據亂數或是偶然無規律形成的浮雕全像片之 圖案是不可能進行解析的，所以不可能藉由解析來進行僞 造。 【實施方式】 φ 以下，參照附圖說明本發明較佳之實施型態，首先說 明揭示於WO27/072794號公報’ WO27/072793號公報及 特願27-3 1 286 1號之浮雕全像晶片（chip)。 圖1顯示本案發明人所提之被安裝單色全像晶片之卡 片的基本構成。 (a)爲卡片全體圖，（b)爲卡片剖面圖，（c)爲全像晶片 之剖面圖，（d)爲全像晶片之功能說明圖，（e)爲被輸出的 檢測訊號。 此卡片1，在不透光性之卡片基體6上裝有表面板 -13- 201032140 4，於該處被貼附全像晶片5。此外，於表面板4上被形 成磁條2與箭頭3。 於（c)顯示全像晶片的基本構造。 全像晶片基板5被配置使用入射光的四分之一波長的 深度之浮雕全像坑（pit)7與未被形成坑的平坦部分8。基 板5與坑7於其上被形成金屬等反射層。此外，9爲保護 覆蓋。 藉由（d)說明全像晶片的功能。 經由保護覆蓋9入射的波長爲λ之光在平坦部8及坑 7之平坦的底部被反射，在外部檢測出實線箭頭所示之波 長λ之光。 坑7之邊緣在上端反射的光與在下端反射的光的相位 差了 1 8 0度，彼此抵銷，所以在外部如虛線箭頭所示不被 檢測出波長λ之光。 如（e)所示，反射光檢測訊號在平坦部8與坑7之邊 界的邊緣會有凹下（dip)，此凹下對於1個坑6會產生2 次。藉由利用此現象，可以檢測出坑7。 圖2所示者，爲規則配置坑7與平坦部分8之全像晶 片之例。 於此圖5爲全像晶片，6爲坑，7爲平坦部。 在（a)可以見到平坦部7，但實際上是如（b)那樣看不 見的。 又’坑的配置沒有必要是規則的，亦有配置爲不規則 者較佳的情形。 -14- 201032140 於圖3，顯示作爲坑而構成的浮雕全像係根據藉由亂 數得到的2値資料進行坑的配置之全像晶片之配置例。 此2値資料，可以藉由檢測放射線物質進行核分裂所 放射的放射線而得到。 於此全像晶片，1 024位元之2値資料作爲32 x 32之 矩陣之正方形而配置浮雕全像片。 於此圖，被寫入2値資料「0」的位置顯示空白，被 φ 寫入2値資料「1」的位置顯示「*」。 於圖4，顯示根據本案申請人提出之使用複數波長之 光（在此例爲紅色光R、綠色光G及藍色光B)之複色全像 晶片的基本構成。 (a)爲其剖面圖，（b)爲其功能說明圖，（c)爲被輸出的 紅色光之檢測訊號，（d)爲被輸出的綠色光之檢測訊號，（e) 爲被輸出的藍色光之檢測訊號。 在（a)，被配置著使用於全像晶片基體1 0的紅色入射 φ 光R、綠色入射光G及藍色入射光B之四分之一波長的 深度之坑11R、11G及11B與未被形成這些坑之平坦部分 HW。全像晶片基體10與坑11R、11G及11B於其上被 形成金屬等反射層。此外，12爲保護覆蓋。 藉由（b)進而說明全像晶片。 於基板10被形成使用的紅色光R的波長λΐι之四分 之一深度的坑11R、及綠色光G的波長XG之四分之一深 度的坑11G及藍色光Β的波長λΒ之四分之一深度的坑 1 1 Β。 -15- 201032140 經由保護覆蓋12入射的波長爲XR之紅色光在坑11R 的邊緣以外被反射，檢測出以實線箭頭所示之波長λϊΐ之 光。 在坑11R的邊緣在上端被反射的紅色光與在下端被反 射的紅色光的相位差了 1 80度，彼此抵消，所以如虛線箭 頭r所示不被檢測出波長λΙΙ之紅色光。 經由保護覆蓋12入射的波長爲λΟ之綠色光在坑11G 的邊緣以外被反射，檢測出以實線箭頭所示之波長λΟ之 綠色光。 在坑11G的邊緣在上端被反射的綠色光與在下端被 反射的綠色光的相位差了 1 80度，彼此抵消，所以如虛線 箭頭g所示不被檢測出波長λΟ之綠色光。 經由保護覆蓋12入射的波長爲λΒ之藍色光在坑11Β 的邊緣以外被反射，檢測出以實線箭頭所示之波長λΒ之 藍色光。 在坑11Β的邊緣在上端被反射的藍色光與在下端被反 射的藍色光的相位差了 1 8 0度，彼此抵消，所以如虛線箭 頭b所示不被檢測出波長λΒ之藍色光。 如（c)所示，紅色光檢測訊號在平坦部13與坑1 1R之 邊界的邊緣會凹下，此凹下對於1個坑11R會產生2次。 如（d)所示，綠色光檢測訊號在平坦部13與坑11G之 邊界的邊緣會凹下，此凹下對於1個坑11G會產生2 次。 如（e)所示，藍色光檢測訊號在平坦部13與坑11B之 201032140 邊界的邊緣會凹下，此凹下對於1個坑11B會產生2次。 藉由利用這些情形，可以確實檢測出坑1 1 R、1 1 G、 1 1 B。 於圖5 ’顯示本案申請人之坑與平坦部分被規則地配 置之全像晶片之例。 於此圖，10爲全像晶片，11R，11G及11B爲坑， 1 1 W爲平坦部。 φ 在（a)可以見到平坦部，但實際上是如（b)那樣看不見 的。 又’坑的配置沒有必要是規則的，亦有配置爲不規則 者較佳的情形。 於圖6’顯不人工方式獲得本案申請人之作爲坑或凸 部被構成的全像晶片之例。 「R」、「G」、「B」及白色光「W」可以藉4進位 數來表現，4進位數可以由4個2位元數，亦即「00」、 φ 「〇1」、「10」、「11」來表現。 根據此事實，與圖4所示的2進位數的場合同樣，藉 由把R、G、B及W作爲4進位數處理，可得圖6所示之 4進位數矩陣。 以前述說明之本案發明人自身之先申請案爲基礎，接 著進而說明具有適於實用的構成之全像晶片的構造及相關 於先行技術發明之全像晶片之製造方法。 (單色浮雕全像實施例1) -17- 201032140 於圖7，顯示單色坑之基本構造之實施例1。 於此圖，1 5爲全像晶片基體，全像晶片基體1 5 配置使用入射光的四分之一波長的深度之坑（Pit) 16 被形成坑的平坦部分17。全像晶片基體15與坑16 上被形成金屬等反射層。於坑16之邊緣，產生圖1 之入射光之凹下（dip)。此外，18爲保護覆蓋。 (單色浮雕全像實施例2) 於圖8，顯示單色坑之基本構造之其他之實施例 於此圖，20爲全像晶片基體，全像晶片基體20 先被形成使用入射光的四分之一波長的深度之坑，於 之若干坑塡充樹脂24。 如此進行，於全像晶片基板20被配置使用入射 四分之一波長的深度之坑21與未被形成坑的平坦 22。全像晶片基體20與坑21於其上被形成金屬等 層。如此進行而形成之坑21之邊緣，產生圖1所示 射光之凹下（dip)。此外，23爲保護覆蓋。 (複色浮雕全像實施例1) 於圖9，顯示複色坑之基本構造之實施例1。 於此圖，25爲全像晶片基體，全像晶片基體1 5 配置使用入射光，例如紅色光R、綠色光G及藍色 之四分之一波長的深度之坑26R、26G、26B與未被 坑的平坦部分27。全像晶片基體25與坑26R、26G、 上被 與未 於其 所示 上預 其中 光的 部分 反射 之入201032140 VI. Description of the Invention [Technical Fields According to the Invention] The invention relating to the present application relates to a structure in which an object such as a card, a banknote, a securities, or the like is easily forged, and it is necessary to perform authenticity authentication and to authenticate the object. The wafer for authenticity and the method of manufacturing the same. [Prior Art] Φ Today is also known as the credit card society. There are many cards on the market, as well as cash cards for banks, credit cards for credit card companies, cards for holders' property, prepaid cards for securities and driver's licenses, health insurance. Cards for identification cards such as certificates and passports are widely used. Most of the cards related to property and the securities of the securities are written with the necessary information on the magnetic strips on the surface or the back, and are automatically or manually read using an automatic Teller's Machine (Automatic Teller's Machine). The device takes the magnetic information from the magnetic strip and performs various processing. The one shown in Figure 1 (a) is an example of the current cash card. In the figure, reference numeral 1 denotes a cash card body composed of plastic or the like, and a magnetic strip 2 on which information is recorded and an arrow 3 in which an insertion direction of a cash card is displayed are formed on the front side. Further, although the illustration is omitted, the necessary items are described in embossed characters. The information written to the magnetic stripe can be easily read using a device called a skimmer, so that a fake card can be created, causing damage to the stolen card. As a countermeasure against this, there is a 1C card using a built-in semiconductor memory, and -5-201032140 is a replacement for a magnetic card, and it has become popular in banks. However, even if the 1C card may be read from the information stored in the memory, it is not absolutely safe to use the case of counterfeiting and labor forgery. Moreover, the 1c card is much more expensive than the magnetic card and cannot be expected to be rapidly popularized. The bank's ATM card can only be used in one country, and the credit card must be used in a foreign country. It is not necessary to replace all the magnetic card credit cards used in the world with 1C cards. Possible thing. Moreover, 'the ATM card and the credit card are embossed to have information such as the holder's name.' This information is also used for magnetic information, so the relief information becomes a clue for making a fake card. In the case where these magnetic cards or 1C cards are lost or stolen, it is easy for the holder to discover the fact 'but in the case of being returned to the hand after being stolen, especially in the case where the person is not noticed to be stolen, the pseudo card is prone to occur. Damage caused by stolen brush. It is not the illegal use caused by the forgery of the card, but as a means of determining whether the card user is legal, the password composed of 4 digits has been used so far. However, this password is often used with a number that can be analogized, so many murder cases have occurred so far. Recently, there has been a tendency to peek at passwords by means of piracy, etc., so it is extremely difficult to prevent illegal use based on passwords. In order to prevent damage caused by the pseudo-card, part of the bio-certification (bioma, biomatrix) technology using pattern recognition technology is adopted. As the representative of the bio-certification 201032140 technology, there are iris certification, fingerprint authentication, palmprint certification, finger vein authentication, palm vein authentication, fingernail vein authentication, and the certification other than iris certification is divided into contact type and non-contact type. All require a pre-registration pattern, the registration of the pattern takes time, and the authentication takes time, so the operating cost becomes large. In the case of a contact type, it is necessary to directly contact the detecting device, and there is a problem of causing suspicion in health or physiologically. In addition, in the case of φ where the part of the injury is certified, or the worst case, when the authentication part is lost, biometric authentication is impossible. In addition, only part of the certification process is carried out during the certification process, so it cannot be said that it is a perfect solution. In addition, only the biometric authentication system that can be used by the card holder is impossible for the user to operate the card by the agent when the card is not used or the card processing device is not nearby. It is inconvenient. As a means of preventing counterfeiting, it is an embossed Hologram (or "embossed hologram") that is attached to a plastic, such as a credit card, a prepaid card, or a paper currency. Because it is very difficult to copy this embossed hologram, it is virtually impossible to forge a card class with a embossed hologram. In the current use type, only one cymbal is read, so a similar It is possible to use embossed ruthless cards. It is often forged as often as a card, and it is notorious for neglecting counterfeit brand-name goods. Counterfeit brand-name products can be distinguished from the real thing by looking at it at a glance, and there are also elaborately made it difficult to tell if it is genuine -7- 201032140. In addition, in some areas, the understanding that counterfeit brand-name goods are illegal is very thin, even if it is known to be counterfeit goods or continue to circulate. Such a situation in which counterfeit goods are directly sold to consumers on the Internet without passing through circulation agencies has gradually increased in recent years. In addition, the change of the body number of the brake car has also occurred as a non-stolen vehicle exported to overseas. In order to cope with such a situation, the maker or the seller of the genuine product is made to the purchaser by making a certificate attached to the genuine product, but there is also a case where the certificate is also forged. In addition, by attaching a label that is difficult to copy as a full-image to a genuine product, it is easy to recognize that it is a genuine product, but copying of a full-image film is only a difficulty, and it is not impossible. The authentication chip is read by the operator of the terminal device by visual inspection, i.e., by the senses, not by the card terminal device. Θ According to the sensory certification, it will vary with the ability of the person who is certified, and even the same person will vary with the certification environment and mental state, whether the body is comfortable, etc. It works, but the reliability is low. In addition, depending on the sensory certification, it depends on the cognitive ability of the person performing the certification, so it can only be used for a few simple patterns. According to the certification of the auxiliary device, by using a magnifying glass or the like to expand the instrument 'or by using a special filter that produces optical interference', the fine drawing -8 - 201032140 line, special line, small text, special shape screening, etc. Specifically, a light-emitting substrate, a light-emitting layer film, a color-changing ink, a photochromic ink, or the like is displayed, and a special optical substrate/laminated film/ink is displayed, and a special calender aid is used for authentication, but These certifications were finally official, so the trustworthiness is very low. According to the certification of the machine processing, the person who is mechanically detected φ is authenticated, and the object to be detected is magnetic or light. Specifically, the luminescent material, the magnetic material bath film/ink, etc. are used, and the detection device is used by the OCR text. Sexual or optical gives bar code specific information, and makes the monthly tester. As an authentication technology based on mechanical processing, there is an artificial-array system that is used in the media to randomly arrange non-reproducibility in the medium. ❹ In the determination of artifacts, the reflective pattern of the granular material, the polymer fiber is used. Illegal use of a parallax image pattern, a magnetic pattern of a fibrous fiber, a randomly recorded magnetic pattern, a pattern of a random charge, a random charge amount pattern of a memory cell, a conductive pattern, a resonance pattern of a vibration seal, or the like The item of the forged object is the "card record information" supplied to the user and the "card body information" given. The card records the information, and the card body is authenticated on the card. Light ink, heat-induced material mixing, ultraviolet light, etc. are special characteristics of materials that depend on human feeling. i into the substrate / layered magnetic bar code and magnetic properties of the magnetic material / optical detector inherent in the object, the optical transmission of the image pattern, magnetic resonance of the magnetic fiber of the random magnetic fiber. , Issue card, Card manufacturing steps Printed at the time of the trip / -9 - 201032140 The information given is equivalent to information about the holder's information, expiration date, etc. The tampering of the representative type of illegal use is the act of rewriting all or part of the information recorded in the card, eliminating formal information and adding illegal information. The card body information 'is the information of the card itself after the card is deleted from the card to be issued, and the physical shape of the card is mainly the background image given in the printing step, the printed layer of the lower layer, and the protective layer. Information about the card base. Forgery, for the illegal behavior of the card body, copying or imitating the pattern or pattern of the information attached to the card body, etc., to make a similarly similar card, specifically reading the pattern given to the real card coupon by the scanner Or a pattern, etc., applying processing, correction, etc., and using a printer. The technique for counterfeiting the card body is limited to a printing technique, and there are many types of printing methods, inks, and printing patterns. However, there is still no decisiveness. The authentication method for counterfeiting measures can be roughly classified into those based on the senses, those based on the assistive devices, and those based on the mechanical handlers. According to the sensory certification, the authenticity is authenticated by the senses of the person such as the sense of sight, the sense of touch, etc., according to the visual person having to change the color, light transmission, and viewing angle of the body to change the overall appearance of the given appearance or color, etc. The tactile person detects the uneven shape given, the texture of the card body, and the like. Specifically, there are trademarks (l〇g〇) marks, special fonts, anti-copy lines, special features 201032140 inks, holograms, optically variable materials, 'dive images, etc.' are difficult to copy/copy, visually It is easy to certify, embossing, embossing, perforation, etc., and it is visually certifiable. Machine reading of patterns such as biomatrix or artifact matrix is generally performed by photographic device reading and certified by pattern recognition technology. Therefore, there is the possibility of forgery based on copying techniques. A card that uses a embossed hologram as a card that is difficult to copy, for example, is disclosed in Japanese Patent Publication No. 6-851-02, Japanese Patent Publication No. Hei. No. Hei. No. Hei. Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. A structure and a manufacturing method of a card using a embossed hologram are disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. According to the inventors of the present invention, No. WO 27/072794 and No. WO 02/72729, the technique of authenticating the card from the authenticity of the body by the embossed hologram is revealed. According to the intent of the inventor's previous case, 27-3 1 28 6 1 , an authenticity discriminating member and an authenticity discriminating method for identifying genuine and counterfeit products by combining 1C tags and embossed photographic images are disclosed. Invention. [PRIOR ART DOCUMENT] [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 4] Japanese Patent Laid-Open No. Hei 20- 1 63 5 3 0 [Patent Document 5] Japanese Patent Laid-Open Publication No. 20_5 1 45 8 1 [Patent Document 6] Japanese Patent Laid-Open No. 22- [Patent Document 7] Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 1] WO27/072793 (Patent Document 12) WO27/072793A SUMMARY OF INVENTION [Problems to be Solved by the Invention] In the present invention, the subject matter The present invention provides a structure for embossing a full-image wafer and a method for manufacturing a embossed hologram wafer, which can be effectively applied to a conventionally used ATM card or credit card without any basic modification, and can be effectively utilized for the determination of counterfeit products. In other words, the publication WO27/072794, 13 WO2 The novel structure of the embossed hologram wafer described in Japanese Patent Publication No. 7/072793 and Japanese Patent Application No. 27-3 1 286, and the method of manufacturing the embossed hologram wafer. [Means for Solving the Problem] In order to solve the above problems, the present application provides the following means. The hologram pits are regularly arranged on the embossed hologram wafer, and the pits in which the hologram phenomenon is performed irregularly are performed. -12- 201032140 The light used is plural. A holographic wafer original plate of a size corresponding to a plurality of embossed hologram wafers is produced, and a plurality of embossed hologram wafers are cut out from the original plate. Spread the uncured resin to harden it. A stamper for embossing hologram wafer fabrication was produced, and a embossed hologram wafer was produced using the stamper. φ [Effects of the Invention] The embossed hologram using the interference of light has a three-dimensional structure, so that it cannot be copied except for the direct copy of the prototype. In addition, the pattern of the embossed hologram formed by random numbers or accidental irregularities is impossible to analyze, so it is impossible to perform falsification by analysis. [Embodiment] φ Hereinafter, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. First, a embossed holographic wafer disclosed in WO27/072794, WO27/072793, and Japanese Patent Application No. 27-3 1 286 1 Chip). Fig. 1 shows the basic constitution of a card for mounting a monochrome hologram wafer as proposed by the inventor of the present invention. (a) is a card full view, (b) is a card cross-sectional view, (c) is a cross-sectional view of the hologram wafer, (d) is a function explanatory view of the hologram wafer, and (e) is a detection signal to be output. This card 1 is provided with a surface plate -13 - 201032140 4 on the opaque card substrate 6, at which the hologram wafer 5 is attached. Further, a magnetic strip 2 and an arrow 3 are formed on the surface plate 4. The basic structure of the hologram wafer is shown in (c). The hologram wafer substrate 5 is configured to use a relief hologram 7 of a depth of a quarter wavelength of incident light and a flat portion 8 not formed with pits. The substrate 5 and the pit 7 are formed with a reflective layer of metal or the like thereon. In addition, 9 is the protection cover. The function of the hologram wafer is explained by (d). The light having the wavelength λ incident through the protective cover 9 is reflected at the flat bottom portion of the flat portion 8 and the pit 7, and the light of the wavelength λ indicated by the solid arrow is detected outside. The edge of the pit 7 has a phase difference between the light reflected at the upper end and the light reflected at the lower end by 180 degrees, which cancels each other out, so that the light of the wavelength λ is not detected as indicated by the dotted arrow. As shown in (e), the reflected light detecting signal is dipped at the edge of the boundary between the flat portion 8 and the pit 7, and this recess is generated twice for one pit 6. By utilizing this phenomenon, the pit 7 can be detected. As shown in Fig. 2, an example of a holographic wafer in which the pit 7 and the flat portion 8 are regularly arranged. 5 is a hologram wafer, 6 is a pit, and 7 is a flat portion. The flat portion 7 can be seen in (a), but is actually invisible as in (b). Moreover, the configuration of the pit is not necessarily a rule, and there is also a case where it is better to configure it as an irregularity. -14- 201032140 In Fig. 3, an example of the arrangement of a hologram wafer in which pits are arranged based on two pieces of data obtained by random numbers is shown. The data can be obtained by detecting the radiation emitted by the nuclear material for nuclear fission. In this holographic wafer, a 1024-bit data is used as a square of a 32 x 32 matrix to configure an embossed hologram. In this figure, the position where the data "0" is written is blank, and the position where "2" is written by φ is displayed as "*". In Fig. 4, the basic configuration of a multi-color hologram wafer using a plurality of wavelengths of light (in this case, red light R, green light G, and blue light B) is proposed by the applicant. (a) is a sectional view thereof, (b) is a functional explanatory diagram thereof, (c) is a detection signal of the output red light, (d) is a detection signal of the outputted green light, and (e) is an output signal Blue light detection signal. In (a), the pits 11R, 11G, and 11B of the depth of the quarter-wavelength of the red incident φ light R, the green incident light G, and the blue incident light B used for the hologram wafer substrate 10 are disposed. The flat portion HW of these pits is formed. The hologram wafer substrate 10 and the pits 11R, 11G, and 11B are formed with a reflective layer of metal or the like thereon. In addition, 12 is the protection cover. The hologram wafer is further explained by (b). The pit 11R having a depth of a quarter of the wavelength λΐ of the red light R used for forming the substrate 10, and the pit 11G having a depth of a quarter of the wavelength XG of the green light G and the wavelength λΒ of the blue pupil are four quarters. A depth of pit 1 1 Β. -15- 201032140 The red light of the wavelength XR incident through the protective cover 12 is reflected outside the edge of the pit 11R, and the light of the wavelength λ 所示 indicated by the solid arrow is detected. The red light reflected at the upper end of the pit 11R is shifted by 180 degrees from the red light reflected at the lower end, and cancels each other, so that the red light of the wavelength λ 不 is not detected as indicated by the broken line arrow r. The green light of the wavelength λ 入射 incident through the protective cover 12 is reflected outside the edge of the pit 11G, and the green light of the wavelength λ 所示 indicated by the solid arrow is detected. The phase of the green light reflected at the upper end of the pit 11G and the green light reflected at the lower end are 180 degrees apart, cancel each other, so that the green light of the wavelength λ 不 is not detected as indicated by the dotted arrow g. The blue light of the wavelength λ 入射 incident through the protective cover 12 is reflected outside the edge of the pit 11 ,, and the blue light of the wavelength λ 所示 indicated by the solid arrow is detected. The phase of the blue light reflected at the upper end of the pit 11 差 and the blue light reflected at the lower end are 180 degrees apart, cancel each other out, so that the blue light of the wavelength λ 不 is not detected as indicated by the dotted arrow b. As shown in (c), the red light detecting signal is recessed at the edge of the boundary between the flat portion 13 and the pit 1 1R, and this recess is generated twice for one pit 11R. As shown in (d), the green light detecting signal is recessed at the edge of the boundary between the flat portion 13 and the pit 11G, and this recess is generated twice for one pit 11G. As shown in (e), the blue light detecting signal is recessed at the edge of the boundary between the flat portion 13 and the pit 11B at 201032140, and this recess is generated twice for one pit 11B. By using these cases, pits 1 1 R, 1 1 G, and 1 1 B can be surely detected. An example of a holographic wafer in which the applicant's pit and flat portion are regularly arranged is shown in Fig. 5'. In the figure, 10 is a hologram wafer, 11R, 11G, and 11B are pits, and 1 1 W is a flat portion. φ The flat portion can be seen in (a), but it is actually invisible as in (b). Moreover, the configuration of the pit is not necessarily a rule, and there is also a case where it is better to configure it as an irregularity. An example of a holographic wafer constructed as a pit or a convex portion of the applicant of the present invention is apparently shown in Fig. 6'. "R", "G", "B" and white light "W" can be represented by 4 digits. The 4 digits can be represented by 4 2 digits, namely "00", φ "〇1", " 10" and "11" are expressed. According to this fact, as in the case of the 2-digit number shown in Fig. 4, by processing R, G, B, and W as 4-bit numbers, the 4-digit matrix shown in Fig. 6 can be obtained. Based on the prior application of the inventors of the present invention, the structure of a holographic wafer having a suitable configuration and a method of manufacturing a holographic wafer relating to the prior art are described. (Monochrome Embossed Full Image Embodiment 1) -17- 201032140 In Fig. 7, Embodiment 1 of the basic configuration of a monochrome pit is shown. In the figure, 15 is a hologram wafer substrate, and the hologram wafer substrate 15 is configured to form a flat portion 17 of the pit using pits 16 of a depth of a quarter wavelength of incident light. A reflective layer of metal or the like is formed on the hologram wafer substrate 15 and the pit 16. At the edge of the pit 16, a dip of the incident light of Figure 1 is produced. In addition, 18 is the protection cover. (Monochrome Embossed Full Image Embodiment 2) FIG. 8 shows another embodiment of the basic configuration of a monochromatic pit. In this figure, 20 is a hologram wafer substrate, and the hologram wafer substrate 20 is first formed using four incident light. A pit of one-wavelength depth is filled with resin 24 in a number of pits. In this manner, the hologram wafer substrate 20 is disposed using a pit 21 having a depth of a quarter wavelength and a flat 22 not formed with a pit. The hologram wafer substrate 20 and the pit 21 are formed with a metal or the like thereon. The edge of the pit 21 formed in this manner produces a dip of the light as shown in Fig. 1. In addition, 23 is the protection cover. (Multicolor Embossed Whole Image Embodiment 1) FIG. 9 shows Embodiment 1 of the basic configuration of a color gradation pit. In the figure, 25 is a holographic wafer substrate, and the holographic wafer substrate 15 is configured to use incident light such as red light R, green light G, and a quarter-wave depth pit 26R, 26G, 26B and The flat portion 27 of the pit. The holographic wafer substrate 25 and the pits 26R, 26G are reflected by the portions of the reticle 26R, 26G that are not pre-exposed therein.
上被 光B 形成 26B 201032140 於其上被形成金屬等反射層。於坑26R，26G，26B之邊 緣，產生圖4所示之入射光R，G，B之凹下。此外，18 爲保護覆蓋。 (複色浮雕全像實施例2) 於圖10,顯示複色坑之基本構造之其他之實施例2。 於此圖，30爲全像晶片基體，於全像晶片基體30預 φ 先形成使用入射光中最長波長，例如紅色光R之四分之一 波長支深度的坑，於坑31R完全未被塡充樹脂，於坑31G 以使塡充後的深度成爲綠色光G的四分之一波長的方式 塡充樹脂，於坑31B以使塡充後的深度成爲藍色光B的 四分之一波長的方式塡充樹脂，於坑31W被完全塡充。 進而於包含這些坑的上面被形成金屬等之反射層。 此外，33爲保護覆蓋。 於圖11顯示圖10所示之全像晶片的動作。 〇 對具有這樣的構成之全像晶片射入紅色光R、綠色光 G及藍色光時，如（a)所示，在坑3 1R的端緣僅紅色光R 不射出，其他之綠色光G及藍色光B則射出，在坑31G 的端緣僅綠色光G不射出，其他之紅色光R及藍色光B 則射出，在坑3 1B的端緣僅藍色光B不射出，其他之紅 色光R及綠色光G則射出，在包含坑31W的端緣之其他 部分則射出所有的光。 根據這些射出光R、G、B之訊號顯示於（b)，（c)， (d)。 -19- 201032140 (複色浮雕全像實施例3) 於圖12，顯示複色坑之基本構造之其他之實施例3。 與複色坑實施例1與2不同，在此實施例使用塡充於 坑的樹脂的折射率有複數種類之樹脂。 於此圖，35爲全像晶片基體，全像晶片基體35上預 先被形成使用入射光中最長波長，例如紅色光R的四分之 一波長的深度之坑，於包含坑的內面之上面被形成金屬等 @ 反射層3 8。 於坑之若干係以實效深度成爲綠色光G及藍色光B 的波長的四分之一的方式被塡充選擇了折射率之樹脂 37R、37G、37B、37W。又，樹脂37W係反射全波長光之 反射體。 此外，39爲保護覆蓋。 於圖1 3顯示圖1 2所示之全像晶片的動作。 對具有這樣的構成之全像晶片射入紅色光R、綠色光 @ G及藍色光B時，如（a)所示，在坑31R的端緣僅紅色光 R不射出，其他之綠色光G及藍色光B則射出，在坑31G 的端緣僅綠色光G不射出，其他之紅色光R及藍色光B 則射出，在坑3 1B的端緣僅藍色光B不射出，其他之紅 色光R及綠色光G則射出，在包含坑39的端緣及內部之 其他部分則射出所有的光。 根據這些射出光R、G、B之訊號顯示於（b)，（c)， ⑷。 -20- 201032140 (複色浮雕全像實施例4) 於圖14，顯示複色坑之基本構造之其他之實施例4。 在此實施例除了實施例3之折射率不同的複數種類樹 脂以外使用反射所有的光的樹脂。 於此圖，40爲全像晶片基體，全像晶片基體40上預 先被形成使用入射光中最長波長，例如紅色光R的四分之 φ —波長的深度更深的之坑，於包含坑的內面之上面被形成 金屬等反射層42。 於坑之若干係以實效深度成爲綠色光G及藍色光B 的波長的四分之一的方式被塡充選擇了折射率之樹脂 41R、41G、41B。此外，在剩下的坑41N被塡充吸收所有 波長的光的樹脂，於坑4 1 W塡充反射所有波長的光的樹 脂。 此外，43爲保護覆蓋。 〇 於圖15顯示圖14所示之全像晶片的動作。 對具有這樣的構成之全像晶片射入紅色光R、綠色光 G及藍色光B時，如（a)所示，在坑41R的端緣僅紅色光 R不射出，其他之綠色光G及藍色光B則射出，在坑41 G 的端緣僅綠色光G不射出，其他之紅色光R及藍色光B 則射出，在坑41B的端緣僅藍色光B不射出，其他之紅 色光R及綠色光G則射出，在坑41N的端緣及內部所有 的光不被射出，在包含坑41的端緣及內部之其他部分則 射出所有的光。 -21 - 201032140 根據這些射出光R、G、B之訊號顯示於（b)，（c)， ⑷。 以下說明不藉由坑而藉由突起得到浮雕全像之浮雕全 像晶片。 (單色浮雕全像實施例3) 於圖16，顯示藉由突起得到單色浮雕全像之浮雕全 像晶片。 於（a)，50爲全像晶片基體，全像晶片基體50上被配 置使用入射光的四分之一波長的高度之突起52與未被形 成突起的平坦部分51。全像晶片基體50與突起52於其 上被形成金屬等反射層。 此外，5 3爲保護覆蓋。 如（b)所示，於突起52之邊緣，產生與圖1所示同樣 的入射光之凹下（dip)。 根據此射出光之訊號顯示於（c)。 (複色浮雕全像實施例5) 於圖17，顯示藉由突起得到單色浮雕全像之浮雕全 像晶片。 於（a)，55爲全像晶片基體，全像晶片基體55上被配 置使用入射光，例如紅色光R、綠色光G及藍色光B之 四分之一波長的高度之突起5 6R、56G、56B與未被形成 坑的平坦部分56W。全像晶片基體55與突起56R、56G、 201032140 56B係於其上被形成金屬等反射層。 此外，58爲保護覆蓋。 如（b)所示，於突起56R，56G，56B之邊緣，產生圖 4所示之同樣之入射光R，G，B之凹下。 根據這些射出光R、G、B之訊號顯示於（c)，（d)， (e)。 以下說明藉由坑與突起得到浮雕全像之浮雕全像晶 ❹ 片。 (單色浮雕全像實施例4) 於圖18’顯示藉由坑與突起得到單色浮雕全像之浮 雕全像晶片。 於U)，60爲全像晶片基體，全像晶片基體60上被配 置使用入射光的四分之一波長的深度之坑63與使用入射 光的四分之一波長的高度之突起62與未被形成坑也未被 Φ 形成突起的平坦部分61。全像晶片基體60與坑63及突 起62於其上被形成金屬等反射層。 此外，65爲保護覆蓋。 如（b)所示，於坑63的端緣與突起62之端緣，產生 與圖1所示同樣的入射光之凹下（dip)。 根據此射出光之訊號顯示於（c)。 與浮雕全像同樣藉由光的波長之四分之一的厚度之透 明媒體而呈現的構造色之現象，係相對於浮雕全像僅不射 出四分之一波長的光的現象，而構造色是強烈射出四分之 -23- 201032140 一波長的光的現象。亦即’光線射入時在浮雕全像片不會 觀測到該光，相對地在構造色該光會比其他光更強烈地被 觀測到。 接著說明可以同時利用浮雕全像與構造色之全像-構 造色晶片。 首先，藉由圖20說明構造色呈現的原理。 呈現構造色之「全像薄片」或者亦簡稱爲「全像（薄 片（flake))」之材料已有市售。全像薄片不是全像片，但 Q 與全像片同樣藉由光的干涉使未被著色的透明體看起來像 是被著色。 在以下說明之實施例把全像薄片等構造色呈現體稱爲 構造色片。 於此圖，70爲被置於絕對折射率n0之媒體中之，例 如PET樹脂之具有厚度d的透光性媒體的薄層，絕對折 射率爲nl。此外，71爲透光性媒體70的入射面，72爲 反射面。 _ 又，亦可使此反射面72爲金屬等之反射膜。 如（a)所示，由絕對折射率爲n0的媒體垂直入射至絕 對折射率爲nl的透光性媒體70的入射面71的波長λΐ之 入射光，會在折射率不同的媒體之入射面71上部分反 射，部分入射至透光性媒體70。 又，波長λΐ的光係對透光性媒體70成垂直，亦即入 射角Θ爲0度地入射，但在此因爲圖示的關係而顯示爲多 少具有某個角度。 -24- 201032140 入射至透光性媒體70的光在射出端面72由於媒體的 折射率不同而被反射，由折射率nl之透光性媒體70放射 至絕對折射率爲n0之媒體中。 在此場合，m爲正的整数，在滿足d = (m+l/2Hl/2n， 亦即Xl=2dn/(m+l/2)的條件時，如（a)所示以入射面71反 射的光的相位與透過透光性媒體7 0而以反射面7 2反射的 光的相位變成相同。又，η爲相對折射率，n = nl/n0。 φ 結果，波長λΐ之光的射出變強。 如（b)所示，在滿足 cl = (m+l/2)X2/2n’ 亦即 λ2 = 2(1η/ιη 的條件時，以入射面71反射的光的相位與透過透光性媒 體70而以反射面72反射的光的相位變成相差半個波長， 彼此抵消。 結果，波長λ2之光的射出變弱。 如（c)所示，以非零度之θί之入射角斜向入射的光， 於入射面71以折射角0r折射，入射角0i、折射角0r與 參 相對折射率η間成立sin0i/sin0r = n之關係。根據此關 係，以入射角θί入射之光在反射面72以折射角0r入 射，以反射角Θγ反射，而由入射面71以射出角θί射 出。 在入射面71以入射角θί入射而以折射角折射之 波長爲λ3之光，m爲正的整数，在滿足（1 = (ιη+1/2)λ3/2 ncos0r，亦即 k3=2dncos0r/(m+l/2)的條件時，在入射面 71以反射角θί反射的光的相位與透過透光性媒體7〇而在 反射面7 2反射而由入射面7 1折射以Θ i射出的光的相位 •25- 201032140 變成相同。 結果，波長λ3之光的射出變強。 如（d)所示，波長爲λ4之光在入射面51以入射角θί 入射而以折射角Θγ折射的場合，在滿足d = (m+l/2)X4/2 ncos0r，亦即X4 = 2dncos0r/m的條件時，在入射面71以反 射角θί反射的光的相位與透過透光性媒體70而在反射面 72反射而由入射面7 1折射以θί射出的光的相位變成相差 半個波長。 結果，波長λ4之光的射出變弱。 如此進行選擇性射出的光的波長λ3或不射出的光λ4 的波長依存於折射角〇r之餘弦“cos0r”。反射角Θγ依存於 入射角0i，入射角0i在0度至90度之間無階段地改變， 所以其結果被選擇而U)及（c)所示之射出的光或是（c)及（d) 所示之不射出的光的波長也無階段地改變。 如此進行而呈現之顏色稱爲構造色，藉由多層構成而 呈現複雜的顏色，有鳥類羽毛、甲蟲之羽、蝴蝶的鱗粉、 0 貝類之內面等大量存在於自然界中。 (全像-構造色晶片實施例1) 圖21所示者’係藉由坑構成之全像-構造色晶片之原 理的說明。 於此圖，70爲基體，71爲透光性蓋，72、73爲坑， 74爲透光性樹脂，75、76爲金屬等反光材。 基體71、透光性蓋72、透光性樹脂74分別具有不同 -26- 201032140 的折射率。 於坑72被塡充透光性樹脂74所以坑72的光學長度 變得與物理性長度不同。因此，在反射膜的某部分不射出 λΐ的波長的光’反射膜75在除了某部分之坑內被觀測到 透光性樹脂74導致之λ2波長之構造色。 於坑73被塡充透光性覆蓋樹脂71所以坑73的光學 長度變得與物理性長度不同。因此，在反射膜的某部分不 φ 射出λ3的波長的光，反射膜76在除了某部分之坑內被觀 測到透光性樹脂71導致之λ4波長之構造色。此外，在不 存在坑的部分被觀測到透光性蓋的厚度導致之λ5的構造 色。 (全像-構造色晶片實施例2) 圖22所示者，係藉由突起構成之全像-構造色晶片之 原理的說明。 〇 於此圖，80爲基體，81爲透光性外蓋，82、83爲透 光性樹脂之突起，84、85爲金屬等反光材。 基體80、透光性蓋81、透光性樹脂82，83分別具有 不同的折射率。 突起8 2，8 3係透光性樹脂，由於其折射率使突起 82，83之光學高度與物理高度不同。因此’突起82之有 反射膜84的部分由於全像現象不射出對應於透光性蓋8 1 的折射率之λΐ波長的光，在沒有反射膜84的部分呈現感 光性樹脂82所致之構造色現象而觀測到對應於折射率的 -27- 201032140 λ2的光。 突起83的反射膜85於內部分，被觀測到對應於透光 性樹脂83的折射率之λ2的構造色，在反射膜85的某個 部分射出所有的光。 使外蓋材的厚度具有光學意義的話，在蓋材與基材或 是突起之上面之間也可以得到不同波長的構造色。 《浮雕全像晶片製造方法》 其次，說明浮雕全像晶片之製造方法。 <浮雕全像晶片製造方法實施例1> 於圖2 3顯示浮雕全像晶片製造方法實施例1。 於（a)以1顯示的是具有16枚浮雕全像晶片的面積之 原板。 於此原板1上形成坑103。 如此進行把被形成坑103的原板1如（b)所示裁斷成 適當大小，得到浮雕全像晶片1 02。 <浮雕全像晶片製造方法實施例2> 圖24所示者，爲在卡片等直接形成浮雕全像晶片之 製造方法。 於（a)以105顯示的是具有16枚卡片的面積之原板。 藉由於此原板105利用遮罩等於其一部分形成坑，得 到具晶片107之卡片原板，將此原板如（b)所示裁斷，得 201032140 到具晶片107之卡片原板106。 <浮雕全像晶片製造方法實施例3> 圖25所示者爲坑之配置被固定，僅坑之資訊是偶然 性決定的晶片之製造方法。 於（a)以110所示者爲具有16枚晶片的面積之原板’ 於晶片原板110跨全面規則性或不規則性地配置坑。 ❹ 於此原板散布透光性之未硬化樹脂，使其硬化而得晶 片原板，將此原板如（b)所示裁斷，得到晶片1 1 1。 <浮雕全像晶片製造方法實施例4> 於圖26顯示圖25所示之晶片的其他型態之製造方 法。 於（a)以115所示者爲具有16枚晶片的面積之原板， 於晶片原板115除了相當於晶片的最外週部的坑以外跨全 〇 面規則性或不規則性地配置坑。 於此原板散布透光性之未硬化之樹脂，使其硬化。如 此進行得到晶片原板，把此原板如（b)所示裁斷成適當大 小’得到晶片1 1 6。 <浮雕全像晶片製造方法實施例5> 於圖27顯示圖25所示之晶片的進而其他種型態之製 造方法。 於（a)以120所示者爲具有16枚晶片的面積之原板， -29- 201032140 於晶片原板1 2 0跨晶片的全面規則性或不規則性地配置 坑。 於相當於晶片的最外週部的部分之孔’注入非硬化性 樹脂，或是予以遮蓋。 於此原板散布透光性之未硬化樹脂’使其硬化而得具 有認證資訊的晶片原板’將此原板如（b)所示裁斷爲適當 大小，得到晶片1 2 1。 <浮雕全像晶片製造方法實施例6 > 於圖2 8所示者，係坑被不規則地配置之晶片的製造 方法。在此實施例，坑之形狀不是圓形而是細長形狀’也 可以形成圓形之坑。 於（a)以130所示者爲具有16枚晶片的面積之原板， 於晶片原板1 3 0跨晶片的全面不規則性地配置細長的坑。 這種形狀的坑可藉由在原板130上使腐蝕或溶解原板 之液體材料由傾斜方向進行散布而得到。 又，由垂直方向散布的話坑的形狀爲圓形。 於此原板散布透光性之未硬化樹脂，使其硬化而得據 認證資訊之晶片原板，將此原板如（b)所示裁斷，得到晶 片 13 1° 在圖29〜圖32所示之實施例，使用預先被形成與單 色全像片用之相同深度的坑之原板。 坑之配置可以是規則配置也可以示不規則配置，在實 施例說明具有規則配置的坑之原板。 -30- 201032140 此外，原板可以是具有圖27〜29所示的複數晶片的 面積者，亦可爲具有單一晶片的面積者。 <浮雕全像晶片製造方法實施例7> 圖29所示者，係最基本之實施例。 (1)所示之140係預先被形成使用光的波長的四分之 一的深度的坑141之晶片原板。 φ (2)對所有的坑塡充未硬化樹脂單體143。未硬化樹脂 單體例如使用紫外線硬化樹脂。 (3 )對最終不成爲坑的位置之單體照射紫外線，使硬 化爲高分子。 (4) 把未被紫外線照射而不硬化的未硬化樹脂單體由 坑除去。 (5) 於原板、硬化樹脂及坑的內面形成反射膜142。 (6) 使全體以透光性之樹脂蓋145覆蓋。 <浮雕全像晶片製造方法實施例8> 圖3 0所示者，係其他實施例。 (1) 所示之140係預先被形成使用光的波長的四分之 一的深度的坑141之晶片原板。 (2) 對不形成最終的坑之坑塡充未硬化樹脂單體143。 未硬化樹脂單體例如使用紫外線硬化樹脂以外之熱硬化性 樹脂。 (3) 使單體硬化，成爲高分子。 -31 - 201032140 (4) 於原板、硬化樹脂及坑的內面形成反射膜142。 (5) 使全體以透光性之樹脂蓋145覆蓋。 如此構成的晶片使入射的光不從坑141之端緣射出， 而由其他部分射出。 <浮雕全像晶片製造方法實施例9 > 圖31所示者，係進而其他之實施例。 (1) 所示之140係預先被形成使用光的波長的四分之 _ 一的深度的坑141之晶片原板。 (2) 對所有的坑塡充未硬化樹脂單體143。未硬化樹脂 單體使用紫外線硬化樹脂。 (3) 對全面塗布光阻膜146。 (4) 對成爲坑的位置之光阻膜照射紫外線，使爲硬化 光阻膜147。 (5) 把未被紫外線照射而不硬化的光阻膜除去。 (6) 對未以光阻膜覆蓋的未硬化樹脂單體照射紫外線 參 使硬化，成爲高分子144。 (7) 把光阻膜與被光阻膜覆蓋的，未被紫外線照射而 不硬化的未硬化樹脂單體由坑除去。 (8) 於原板、硬化樹脂及坑的內面形成反射膜ία。 (9) 使全體以透光性之樹脂蓋145覆蓋。 <浮雕全像晶片製造方法實施例1 0> 圖32所示者，係進而其他之實施例。 -32- 201032140 (1) 所示之140係預先被形成使用光的波長的四分之 一的深度的坑1 4 1之晶片原板。 (2) 對所有的坑塡充未硬化樹脂單體143。未硬化樹脂 單體使用紫外線硬化樹脂。 (3) 對最終成爲坑之坑的未硬化樹脂單體143形成保 護膜1 47。未硬化樹脂單體例如使用紫外線硬化樹脂以外 之熱硬化性樹脂。 φ (4)對未以保護膜覆蓋的未硬化樹脂單體照射紫外線 使硬化，成爲高分子144。 (5) 把保護膜與被保護膜覆蓋的，未被紫外線照射而 不硬化的未硬化樹脂單體由坑除去。 (6) 於原板、硬化樹脂及坑的內面形成反射膜142。 (7) 使全體以透光性之樹脂蓋145覆蓋。 如此構成的晶片使入射的光不從坑141之端緣射出， 而由其他部分射出。 ❹ <浮雕全像晶片製造方法實施例11> 在圖29〜32之實施例使用被形成使用光的波長的四 分之一的深度之坑的晶片原板、但藉由同樣的製造方法使 坑之深度成爲複數種而對應於多色光亦爲可能。 在圖33〜圖36所示之實施例，於原板並不使用預先 被形成與單色全像片用之相同深度的坑之原板，而使用壓 模在平坦的原板形成坑。 坑之配置可以是規則配置也可以示不規則配置，在實 -33- 201032140 施例說明具有規則配置的坑之原板。 此外，原板可以是具有圖27〜29所示的複數晶片的 面積者，亦可爲具有單一晶片的面積者。 <浮雕全像晶片製造方法實施例1 2> 圖33所示者，係最基本之實施例。 (1) 所示之150係預先被形成使用光的波長的四分之 一的深度的坑模1 5 1之模具等之晶片原板模。 (2) 對所有的坑模塡充未硬化樹脂單體152。未硬化樹 脂單體例如使用紫外線硬化樹脂。 (3) 對最終不成爲坑模的位置之單體照射紫外線，使 硬化爲筒分子。 (4) 把未被紫外線照射而不硬化的未硬化樹脂單體由 坑模除去。 (5) 使用被形成坑模之晶片原板模形成壓模154。 (6) 使壓模154由晶片原板模150脫模。 (7) 使用壓模154衝壓平的原板，形成具有坑之原板 160 ° (8) 使具有坑之原板160由壓模154脫模。 (9) 於具有坑之原板160形成反射膜162。 (1〇)使全體以透光性之樹脂蓋163覆蓋。 <浮雕全像晶片製造方法實施例1 3> 圖3 4所示者，係其他實施例。 -34- 201032140 (1) 所示之150係預先被形成使用光的波長的四分之 一的深度的坑模151之模具等之晶片原板模。 (2) 對不形成最終的坑之坑模塡充未硬化樹脂單體 1 52。未硬化樹脂單體例如使用紫外線硬化樹脂以外之熱 硬化性樹脂。 (3) 使單體硬化，成爲高分子153。 (4) 使用被形成坑模之晶片原板模形成壓模1 54。 φ (5)使壓模154由晶片原板模150脫模。 以後之過程與圖33所示之（7)〜（9)相同所以省略說 明。 <浮雕全像晶片製造方法實施例14> 圖35所示者，係進而其他之實施例。 (1)所不之150係預先被形成使用光的波長的四分之 一的深度的坑模1 5 1之模具等之晶片原板模。 〇 (2)對所有的坑模塡充未硬化樹脂單體152。未硬化樹 脂單體使用紫外線硬化樹脂。 (3) 對全面塗布光阻膜156。 (4) 對成爲坑模的位置之光阻膜照射紫外線，使爲硬 化光阻膜1 5 7。 (5) 把未被紫外線照射而不硬化的光阻膜除去。 (6) 對未以光阻膜覆蓋的未硬化樹脂單體照射紫外線 使硬化，成爲高分子153。 (7) 把光阻膜與被光阻膜覆蓋的，未被紫外線照射而 -35- 201032140 不硬化的未硬化樹脂單體由坑模除去。 (8) 使用被形成坑模之晶片原板模形成壓模154。 (9) 使壓模154由晶片原板模150脫模。 以後之過程與圖33所示之（7)〜（9)相同所以省略說 明。 <浮雕全像晶片製造方法實施例15> 圖36所示者，係進而其他之實施例。 _ (1) 所示之150係預先被形成使用光的波長的四分之 一的深度的坑模1 5 1之模具等之晶片原板模。 (2) 對所有的坑模塡充未硬化樹脂單體152。未硬化樹 脂單體使用紫外線硬化樹脂》 (3) 對最終成爲坑模之坑模的未硬化樹脂單體152形 成保護膜155。未硬化樹脂單體例如使用紫外線硬化樹脂 以外之熱硬化性樹脂。 (4) 對未以保護膜覆蓋的未硬化樹脂單體照射紫外線 © 使硬化，成爲高分子153。 (5) 把保護膜與被保護膜覆蓋的，未被紫外線照射而 不硬化的未硬化樹脂單體由坑模除去。 (6) 使用被形成坑模之晶片原板模形成壓模1 54。 (7) 使壓模154由晶片原板模150脫模。 以後之過程與圖33所示之（7)〜（9)相同所以省略說 明。 在圖33〜36之實施例使用被形成使用光的波長的四 -36- 201032140 分之一的深度之坑模的晶片原板，但藉由同樣的製造方法 使坑模之深度成爲複數種而對應於多色光亦爲可能。 <浮雕全像晶片製造方法實施例16> 簡單說明不規則地配置單色浮雕全像晶片之坑或突起 的方法之說明。 於圖37 ’ 170爲坑171被不規則配置的晶片，（a)爲 φ 由上所見之圖。 (b)及（c)爲使用坑的場合之剖面圖。 坑係把基體1 70藉由蝕刻等手段開口而形成使用光的 四分之一波長的深度。 1 7 2爲蓋。 不蝕刻基板170而藉由開口於使用光的四分之一波長 的薄膜也可以得到。 (d)及（e)爲使用突起176的場合之剖面圖。 〇 突起176係於基體175上散布使用光的四分之一波長 的厚度之薄片而形成的。 1 77爲蓋。 <浮雕全像晶片製造方法實施例17> 簡單說明不規則地配置複色浮雕全像晶片之坑或突起 的方法之說明。 於圖38，180爲被不規則配置深度不同的坑181R， 181G，181B的晶片，（a)爲由上所見之圖。 -37- 201032140 (b)及（c)爲使用坑171的場合之剖面圖。 坑係把基體1 80藉由蝕刻等手段開口而形成使用光的 四分之一波長的深度。 1 82爲蓋。 不蝕刻基板180而藉由開口於使用光的四分之一波長 的薄膜也可以得到。 (d)及（e)爲使用突起176的場合之剖面圖。 突起176係於基體175上散布使用光的四分之一波長 @ 的厚度之薄片186R，186G，186B而形成的。 1 8 7爲蓋。 [產業上利用可能性] 以上說明之真僞認證晶片、具有真僞認證晶片之卡 片，可以應用於銀行提款卡、信用卡、預付卡、證券、身 份證、進出管制證、證明書等。 又，與浮雕全像片同樣藉由入射光與反射光的干涉產 · 生光學圖案，亦即具有發出珍珠光澤（nacreous)或是虹色 (iridescent)之天然素材或人工素材之小片（chip)替代全像 晶片來使用亦可。 【圖式簡單說明】 圖1係具有坑之單色浮雕全像晶片之說明。 圖2係具有坑之單色浮雕全像晶片之坑的配置例。 圖3係根據亂數作成的單色浮雕全像晶片之坑的配置 -38- 201032140 例。 圖4係複色浮雕全像晶片之坑的配置例。 圖5係複色浮雕全像晶片之坑的配置例。 圖6係根據亂數作成的複色浮雕全像晶片之坑的配置 例。 圖7係單色浮雕全像晶片之構造實施例。 圖8係單色浮雕全像晶片之構造之其他實施例。 φ 圖9係複色浮雕全像晶片之構造實施例。 圖1 〇係複色浮雕全像晶片之構造之其他實施例。 圖11係圖10之複色浮雕全像晶片之說明。 圖12係複色浮雕全像晶片之構造之進而其他的實施 例。 圖13係圖12之複色浮雕全像晶片之說明。 圖14係複色浮雕全像晶片之構造之進而其他的實施 例。 〇 圖1 5係圖1 4之複色浮雕全像晶片之說明。 圖16係具有突起之單色浮雕全像晶片之說明。 圖17係具有突起之複色浮雕全像晶片之說明。 圖1 8係具有坑與突起之單色浮雕全像晶片之說明。 圖19係具有坑與突起之複色浮雕全像晶片之說明。 圖20係構造色之原理說明。 圖21係產生浮雕全像現象與構造色現象之坑的說 明。 圖22係產生浮雕全像現象與構造色現象之突起的說 -39- 201032140 明。 圖23係得到複數浮雕全像晶片的方法之說明。 圖24係得到具有浮雕全像晶片的複數卡片的方法之 說明。 圖25係得到複數浮雕全像晶片的其他方法之說明。 圖26係得到複數浮雕全像晶片的進而其他種方法之 說明。 圖27係得到複數浮雕全像晶片的進而其他種方法之 ® 說明。 圖28係得到複數浮雕全像晶片的進而其他種方法之 說明。 圖29係製造具有坑之單色浮雕全像晶片的原則方法 之說明。 圖30係製造具有坑之單色浮雕全像晶片的其他方法 之說明。 圖31係製造具有坑之單色浮雕全像晶片的進而其他 @ 種方法之說明。 圖3 2係製造具有坑之單色浮雕全像晶片的進而其他 種方法之說明。 圖33係使用壓模製造具有坑之單色浮雕全像晶片的 原理方法之說明。 圖34係使用壓模製造具有坑之單色浮雕全像晶片的 其他方法之說明。 圖35係使用壓模製造具有坑之單色浮雕全像晶片的 -40- 201032140 進而其他種方法之說明。 圖36係使用壓模製造具有坑之單色浮雕全像晶片的 進而其他種方法之說明。 圖37係不規則地配置單色浮雕全像晶片之坑或突起 的方法之說明。 圖38係不規則地配置複色浮雕全像晶片之坑或突起 的方法之說明。 【主要元件符號說明】 1 :卡片 5 :浮雕全像晶片 7，11，16，21, 26，31，36，41:浮雕全像坑 52，56 ’ 62，68 :浮雕全像突起 72 ’ 73 :浮雕全像構造色坑 84，85 :浮雕全像構造色突起 1 ， 105 ， 110 ， 115 ， 120 ， 130 :原板 140 :晶片基板 150 :基板模 154 :壓模 -41 -The upper surface is formed by light B. 26B 201032140 A reflective layer of metal or the like is formed thereon. At the edges of the pits 26R, 26G, and 26B, the incident light R, G, and B shown in Fig. 4 are generated. In addition, 18 is for protection coverage. (Multicolor Embossed Whole Image Embodiment 2) FIG. 10 shows another embodiment 2 of the basic configuration of the color gradation pit. In the figure, 30 is a holographic wafer substrate, and a pit using a longest wavelength of incident light, for example, a quarter wavelength of the red light R, is formed in the holographic wafer substrate 30, and the pit 31R is completely untwisted. The resin is filled in the pit 31G so that the depth after the filling becomes a quarter wavelength of the green light G, and the resin is filled in the pit 31B so that the depth after the filling becomes a quarter wavelength of the blue light B The method is filled with resin and is completely filled in the pit 31W. Further, a reflective layer of metal or the like is formed on the upper surface including the pits. In addition, 33 is the protection cover. The operation of the hologram wafer shown in Fig. 10 is shown in Fig. 11. When the hologram wafer having such a configuration is incident on the red light R, the green light G, and the blue light, as shown in (a), only the red light R is not emitted at the edge of the pit 3 1R, and the other green light G is emitted. And the blue light B is emitted, only the green light G is not emitted at the edge of the pit 31G, and the other red light R and blue light B are emitted, and only the blue light B is not emitted at the edge of the pit 3 1B, and other red light is emitted. R and green light G are emitted, and all the light is emitted at the other portion including the edge of the pit 31W. The signals according to these emitted lights R, G, and B are shown in (b), (c), and (d). -19- 201032140 (Multicolor Embossed Whole Image Embodiment 3) FIG. 12 shows another embodiment 3 of the basic configuration of the color gradation pit. Unlike the pits of Examples 1 and 2, in this embodiment, the resin used in the pit has a refractive index of a plurality of types of resins. In the figure, 35 is a holographic wafer substrate, and the holographic wafer substrate 35 is previously formed with a pit of a depth of a quarter wavelength of the longest wavelength of incident light, such as red light R, above the inner surface of the pit containing the pit. A metal such as @reflecting layer 3 8 is formed. The plurality of pits are filled with the refractive index resins 37R, 37G, 37B, and 37W so that the effective depth becomes one quarter of the wavelengths of the green light G and the blue light B. Further, the resin 37W is a reflector that reflects light of all wavelengths. In addition, 39 is the protection cover. The operation of the hologram wafer shown in Fig. 12 is shown in Fig. 13. When the hologram wafer having such a configuration is incident on the red light R, the green light @G, and the blue light B, as shown in (a), only the red light R is not emitted at the edge of the pit 31R, and the other green light G is emitted. And the blue light B is emitted, only the green light G is not emitted at the edge of the pit 31G, and the other red light R and blue light B are emitted, and only the blue light B is not emitted at the edge of the pit 3 1B, and other red light is emitted. R and green light G are emitted, and all the light is emitted at the edge including the edge of the pit 39 and the other portion inside. The signals based on these emitted lights R, G, and B are shown in (b), (c), and (4). -20- 201032140 (Multicolor Embossed Whole Image Embodiment 4) In Fig. 14, another embodiment 4 of the basic configuration of the color gradation pit is shown. In this embodiment, a resin which reflects all the light is used in addition to the plural kinds of resins having different refractive indices of Example 3. In the figure, 40 is a holographic wafer substrate, and the holographic wafer substrate 40 is formed in advance using a longest wavelength of incident light, for example, a quarter of φ of the red light R, a deeper pit of the wavelength, in the pit. A reflective layer 42 such as a metal is formed on the upper surface of the surface. The plurality of pits are filled with the refractive index resins 41R, 41G, and 41B so that the effective depth becomes one quarter of the wavelengths of the green light G and the blue light B. Further, in the remaining pit 41N, a resin which absorbs light of all wavelengths is charged, and a resin which reflects light of all wavelengths is filled in the pit 4 1 W. In addition, 43 is the protection cover. The operation of the hologram wafer shown in Fig. 14 is shown in Fig. 15. When the red light R, the green light G, and the blue light B are incident on the hologram wafer having such a configuration, as shown in (a), only the red light R is not emitted at the edge of the pit 41R, and the other green light G and The blue light B is emitted, and only the green light G is not emitted at the edge of the pit 41 G, and the other red light R and blue light B are emitted. Only the blue light B is not emitted at the edge of the pit 41B, and the other red light R is emitted. The green light G is emitted, and all the light is not emitted at the edge and inside of the pit 41N, and all the light is emitted at the edge including the pit 41 and other portions inside. -21 - 201032140 The signals according to these emitted lights R, G, and B are displayed in (b), (c), (4). An embossed hologram wafer in which relief images are obtained by projections without using pits will be described below. (Monochrome Embossed Full Image Embodiment 3) In Fig. 16, an embossed hologram wafer in which a monochromatic relief hologram is obtained by a projection is shown. In (a), 50 is a hologram wafer substrate, and the holographic wafer substrate 50 is provided with a projection 52 having a height of a quarter wavelength of incident light and a flat portion 51 not formed with a projection. The hologram wafer substrate 50 and the protrusions 52 are formed thereon with a reflective layer of metal or the like. In addition, 5 3 is the protection cover. As shown in (b), at the edge of the projection 52, the same dip of incident light as that shown in Fig. 1 is produced. The signal based on this emitted light is shown in (c). (Multicolor Embossed Full Image Embodiment 5) In Fig. 17, an embossed hologram wafer in which a monochromatic relief hologram is obtained by a projection is shown. In (a), 55 is a holographic wafer substrate, and the holographic wafer substrate 55 is disposed with incident light, for example, a height of a quarter wavelength of the red light R, the green light G, and the blue light B. 5 6R, 56G , 56B and a flat portion 56W that is not formed into a pit. The hologram wafer substrate 55 and the protrusions 56R, 56G, 201032140 56B are formed thereon with a reflective layer of metal or the like. In addition, 58 is the protection cover. As shown in (b), at the edges of the protrusions 56R, 56G, 56B, the same incident light R, G, B as shown in Fig. 4 is generated. The signals based on these emitted lights R, G, and B are shown in (c), (d), and (e). The following is an illustration of an embossed holographic wafer obtained by embossing a full image of a pit and a projection. (Monochrome Embossed Full Image Embodiment 4) A embossed hologram wafer in which a monochromatic relief hologram is obtained by pits and projections is shown in Fig. 18'. In U), 60 is a holographic wafer substrate, and the hologram substrate 60 is disposed with a pit 63 of a depth of a quarter wavelength of incident light and a protrusion 62 of a height of a quarter wavelength of incident light. The flat portion 61 where the pit is formed is also not formed by Φ. The hologram wafer substrate 60 and the pits 63 and the protrusions 62 are formed thereon with a reflective layer of metal or the like. In addition, 65 is the protection cover. As shown in (b), at the end edge of the pit 63 and the end edge of the projection 62, the same dip of incident light as that shown in Fig. 1 is produced. The signal based on this emitted light is shown in (c). The phenomenon of the structural color exhibited by the transparent medium of the thickness of one quarter of the wavelength of the light, similar to the embossed hologram, is a phenomenon in which only a quarter-wavelength of light is emitted with respect to the embossed hologram, and the structural color It is a phenomenon that strongly emits a quarter of a -23-201032140 light. That is, when the light is incident, the light is not observed in the embossed full image, and the light is relatively more strongly observed in the structural color than the other light. Next, it is explained that the hologram of the embossed hologram and the structuring color can be simultaneously utilized to construct the color wafer. First, the principle of constructing color rendering will be explained by means of FIG. A material that exhibits a "all-image sheet" of structural color or a "full image (flake)" is commercially available. The holographic sheet is not a full image, but Q and the hologram also cause the uncolored transparent body to appear to be colored by the interference of light. In the embodiment described below, a structural color presenting body such as a hologram sheet is referred to as a structural color patch. In the figure, 70 is a medium which is placed in a medium having an absolute refractive index n0, for example, a thin layer of a translucent medium having a thickness d of a PET resin, and an absolute refractive index of n1. Further, 71 is an incident surface of the light transmitting medium 70, and 72 is a reflecting surface. Further, the reflecting surface 72 may be a reflecting film of metal or the like. As shown in (a), the incident light of the wavelength λ 入射 of the incident surface 71 of the light-transmitting medium 70 having the absolute refractive index n0 perpendicularly incident on the medium having the absolute refractive index n0 is incident on the incident surface of the medium having a different refractive index. The upper portion 71 is partially reflected and partially incident on the light transmissive medium 70. Further, the light of the wavelength λ 成 is perpendicular to the light-transmitting medium 70, that is, the incident angle Θ is 0 degrees, but here, it is shown that there is a certain angle due to the relationship shown in the figure. -24- 201032140 The light incident on the light-transmitting medium 70 is reflected by the emission end surface 72 due to the difference in refractive index of the medium, and is radiated from the light-transmitting medium 70 having the refractive index n1 to the medium having the absolute refractive index n0. In this case, m is a positive integer, and when the condition of d = (m + l / 2Hl / 2n, that is, Xl = 2dn / (m + l / 2) is satisfied, as shown in (a), the incident surface 71 The phase of the reflected light is the same as the phase of the light reflected by the transmissive medium 70 and reflected by the reflecting surface 72. Further, η is the relative refractive index, n = nl/n0. φ As a result, the emission of the light of the wavelength λΐ As shown in (b), when the condition of cl = (m + l / 2) X2 / 2n', that is, λ2 = 2 (1η / ιη) is satisfied, the phase of the light reflected by the incident surface 71 is transparent. The phase of the light reflected by the optical medium 70 and reflected by the reflecting surface 72 becomes half a wavelength, and cancels each other. As a result, the light of the wavelength λ2 is weakened. As shown in (c), the incident angle of the θί is non-zero. The incident light is refracted at the incident angle 71 by the refraction angle 0r, and the relationship between the incident angle 0i, the refraction angle 0r, and the reference relative refractive index η is sin0i/sin0r = n. According to this relationship, the incident light at the incident angle θί is The reflecting surface 72 is incident at a refraction angle of 0r, is reflected by the reflection angle Θγ, and is emitted by the incident surface 71 at an exit angle θί. The incident surface 71 is incident at an incident angle θί and is refracted at a refraction angle. Light having a wavelength of λ3, m is a positive integer, and satisfies the incident surface 71 when (1 = (ιη+1/2)λ3/2 ncos0r, that is, k3=2dncos0r/(m+l/2). The phase of the light reflected by the reflection angle θί is the same as the phase of the light which is transmitted through the translucent medium 7〇 and reflected by the reflection surface 72 and refracted by the incident surface 71 to emit light Θ i. 25- 201032140 becomes the same. The light of the light becomes strong. As shown in (d), when the light of the wavelength λ4 is incident on the incident surface 51 at the incident angle θί and is refracted by the refraction angle Θγ, d = (m+l/2)X4/ is satisfied. 2 ncos0r, that is, when X4 = 2dncos0r/m, the phase of the light reflected by the incident surface 71 at the reflection angle θί is reflected on the reflective surface 72 through the translucent medium 70 and is refracted by the incident surface 71 to be θί The phase of the light becomes half a wavelength. As a result, the emission of the light of the wavelength λ4 becomes weak. The wavelength of the wavelength λ3 of the selectively emitted light or the wavelength of the non-ejected light λ4 depends on the cosine "cos0r" of the refraction angle 〇r. The reflection angle Θγ depends on the incident angle 0i, and the incident angle 0i changes steplessly between 0 degrees and 90 degrees, so the result is selected. The wavelengths of the light emitted by U) and (c) or the light not emitted by (c) and (d) are also changed steplessly. The color thus presented is called a structural color, by multiple layers. It is composed of a complex color, and there are a large number of bird feathers, beetle feathers, butterfly scales, and inner shells of 0 shellfish. (Full image-structure color wafer embodiment 1) A hologram consisting of pits - an explanation of the principle of constructing a color chip. In the figure, 70 is a base, 71 is a translucent cover, 72 and 73 are pits, 74 is a translucent resin, and 75 and 76 are reflective materials such as metal. The base 71, the translucent cover 72, and the translucent resin 74 have refractive indices different from -26 to 201032140, respectively. The pit 72 is filled with the light transmissive resin 74 so that the optical length of the pit 72 becomes different from the physical length. Therefore, the light of the wavelength of λ 不 is not emitted to a certain portion of the reflective film. The reflective film 75 is observed in a pit of a certain portion, and the structural color of the λ 2 wavelength caused by the light-transmitting resin 74 is observed. The pit 73 is filled with the light-transmitting cover resin 71 so that the optical length of the pit 73 becomes different from the physical length. Therefore, light of a wavelength of λ3 is not emitted by φ in a certain portion of the reflective film, and the reflective film 76 is observed in a pit of a certain portion to have a structural color of λ4 wavelength due to the translucent resin 71. Further, the structural color of λ5 due to the thickness of the light-transmitting cover was observed in the portion where no pit was present. (Full Image-Structural Color Wafer Embodiment 2) As shown in Fig. 22, the principle of constructing a color wafer by a hologram composed of protrusions is described.于此 In the figure, 80 is a base, 81 is a translucent cover, 82 and 83 are protrusions of a light-transmitting resin, and 84 and 85 are reflex materials such as metal. The base 80, the translucent cover 81, and the translucent resins 82, 83 have different refractive indices. The projections 8 2, 8 3 are light-transmitting resins, and the optical heights of the projections 82, 83 are different from the physical height due to their refractive indices. Therefore, the portion of the protrusion 82 having the reflection film 84 does not emit light of a λ ΐ wavelength corresponding to the refractive index of the translucent cover 8 1 due to the hologram phenomenon, and the structure of the photosensitive resin 82 is present at a portion where the reflection film 84 is absent. Light of -27-201032140 λ2 corresponding to the refractive index was observed by the color phenomenon. In the inner portion of the reflection film 85 of the projection 83, a structural color corresponding to λ2 of the refractive index of the light-transmitting resin 83 is observed, and all the light is emitted from a certain portion of the reflection film 85. If the thickness of the cover material is optically significant, a structural color of a different wavelength can be obtained between the cover material and the substrate or the upper surface of the protrusion. <<Manufacturing Method of Embossed Whole Image Wafer>> Next, a method of manufacturing a relief hologram wafer will be described. <Relief hologram wafer manufacturing method Example 1> Fig. 23 shows a first embodiment of the embossed hologram wafer manufacturing method. Shown in (a) by 1 is the original plate having an area of 16 embossed hologram wafers. A pit 103 is formed on the original plate 1. Thus, the original sheet 1 to be formed by the pits 103 is cut to an appropriate size as shown in (b) to obtain an embossed hologram wafer 102. <Relief hologram wafer manufacturing method embodiment 2> Fig. 24 shows a method of manufacturing a embossed hologram wafer directly on a card or the like. Shown at (a) 105 is the original board having an area of 16 cards. Since the original board 105 is formed by using a mask equal to a part thereof to form a pit, the original board of the card having the wafer 107 is obtained, and the original board is cut as shown in (b) to obtain 201032140 to the card original board 106 having the wafer 107. <Relief hologram wafer manufacturing method embodiment 3> Fig. 25 shows a method in which the pit arrangement is fixed, and only the pit information is accidentally determined. In (a) the original plate having an area of 16 wafers as indicated by 110 is disposed on the wafer original plate 110 across the regular regularity or irregularity.透光 The light-transmissive uncured resin is dispersed on the original plate to be hardened to obtain a wafer original plate, and the original plate is cut as shown in (b) to obtain a wafer 1 1 1 . <Relief hologram wafer manufacturing method embodiment 4> Fig. 26 shows a manufacturing method of the other pattern of the wafer shown in Fig. 25. In (a), the original plate having an area of 16 wafers is indicated by 115, and the pits are arranged regularly or irregularly across the entire surface of the wafer original plate 115 except for the pit corresponding to the outermost peripheral portion of the wafer. The original plate is spread with a light-transmissive uncured resin to harden it. Thus, the original wafer was obtained, and the original plate was cut to an appropriate size as shown in (b) to obtain a wafer 1 16 . <Relief hologram wafer manufacturing method Example 5> Fig. 27 shows a further manufacturing method of the wafer shown in Fig. 25. In (a) the original plate having an area of 16 wafers as indicated by 120, -29-201032140 is arranged in a general regularity or irregularity of the wafer original plate 1280 across the wafer. The non-curable resin is injected into the hole corresponding to the outermost peripheral portion of the wafer or covered. On the original sheet, a light-transmissive uncured resin is hardened to obtain a wafer original plate having authentication information. The original sheet is cut to an appropriate size as shown in (b) to obtain a wafer 1 21. <Relief hologram wafer manufacturing method Example 6 > As shown in Fig. 28, a method of manufacturing a wafer in which pits are irregularly arranged is described. In this embodiment, the shape of the pit is not a circle but an elongated shape' can also form a circular pit. The (a) is an original plate having an area of 16 wafers as indicated by 130, and elongated pits are arranged on the wafer irregularity across the wafer. The pit of such a shape can be obtained by scattering the liquid material which corrodes or dissolves the original plate on the original plate 130 by oblique directions. Further, the shape of the pits dispersed in the vertical direction is a circle. The original plate is woven with a light-transmissive uncured resin, which is hardened to obtain a wafer original plate according to the certification information, and the original plate is cut as shown in (b) to obtain a wafer 13 1° as shown in FIGS. 29 to 32. For example, an original plate in which a pit of the same depth as that used for a monochrome full-image film is formed in advance is used. The configuration of the pits may be a regular configuration or an irregular configuration, and the original board of the pit having a regular configuration is explained in the embodiment. -30- 201032140 Further, the original board may have an area of a plurality of wafers as shown in Figs. 27 to 29, or may have an area of a single wafer. <Relief hologram wafer manufacturing method embodiment 7> The one shown in Fig. 29 is the most basic embodiment. (1) The 140 series shown is a wafer original plate in which pits 141 having a depth of one quarter of the wavelength of light are formed in advance. φ (2) is filled with uncured resin monomer 143 for all the pits. The uncured resin monomer is, for example, an ultraviolet curable resin. (3) The monomer that is not in the position of the pit is irradiated with ultraviolet rays to be hardened into a polymer. (4) The uncured resin monomer which is not irradiated with ultraviolet rays and is not hardened is removed from the pit. (5) A reflective film 142 is formed on the inner surface of the original plate, the cured resin, and the pit. (6) The entire resin cover 145 is covered with a light transmissive property. <Relief hologram wafer manufacturing method embodiment 8> Fig. 30 is another embodiment. (1) The 140 series shown is a wafer original plate in which a pit 141 having a depth of one quarter of the wavelength of light is formed in advance. (2) The unhardened resin monomer 143 is filled with a pit which does not form a final pit. As the uncured resin monomer, for example, a thermosetting resin other than the ultraviolet curable resin is used. (3) The monomer is hardened to become a polymer. -31 - 201032140 (4) A reflection film 142 is formed on the inner surface of the original plate, the cured resin, and the pit. (5) The entire resin cover 145 is covered with a light transmissive property. The wafer thus constructed causes incident light to be emitted from the end edge of the pit 141 and is emitted from the other portion. <Relief hologram wafer manufacturing method embodiment 9 > Fig. 31 is a further embodiment. (1) The 140 series shown is a wafer original plate in which a pit 141 having a depth of a quarter of a wavelength of light is formed in advance. (2) Fill all the pits with uncured resin monomer 143. The uncured resin monomer is an ultraviolet curable resin. (3) The photoresist film 146 is completely coated. (4) The photoresist film which is a position of the pit is irradiated with ultraviolet rays to cure the photoresist film 147. (5) Remove the photoresist film that is not irradiated with ultraviolet rays and is not hardened. (6) The uncured resin monomer not covered with the photoresist film is irradiated with ultraviolet rays to be hardened to form a polymer 144. (7) The photoresist film and the uncured resin monomer covered by the photoresist film which are not irradiated with ultraviolet rays and are not hardened are removed from the pit. (8) A reflective film ία is formed on the inner surface of the original plate, the hardened resin, and the pit. (9) The entire resin cover 145 is covered with a light transmissive property. <Relief hologram wafer manufacturing method Example 1 0> Fig. 32 is a further embodiment. -32- 201032140 (1) The 140 series shown is a wafer original plate of pit 1 4 1 which is formed in advance using a depth of a quarter of the wavelength of light. (2) Fill all the pits with uncured resin monomer 143. The uncured resin monomer is an ultraviolet curable resin. (3) A protective film 1 47 is formed on the uncured resin monomer 143 which eventually becomes a pit. As the uncured resin monomer, for example, a thermosetting resin other than the ultraviolet curable resin is used. φ (4) irradiates ultraviolet rays to the uncured resin monomer not covered with the protective film to be cured, and becomes polymer 144. (5) The uncured resin monomer covered with the protective film and not covered by the ultraviolet ray and not hardened by the protective film is removed by the pit. (6) A reflective film 142 is formed on the inner surface of the original plate, the cured resin, and the pit. (7) The entire resin cover 145 is covered with a light transmissive property. The wafer thus constructed causes incident light to be emitted from the end edge of the pit 141 and is emitted from the other portion. ❹ <embossed hologram wafer manufacturing method embodiment 11> In the embodiment of Figs. 29 to 32, a wafer original plate which is formed into a pit using a depth of a quarter of the wavelength of light is used, but the pit is formed by the same manufacturing method. It is also possible that the depth becomes plural and corresponds to polychromatic light. In the embodiment shown in Figs. 33 to 36, the original plate of the pit having the same depth as that used for the monochromatic hologram is not used in the original plate, and the dies are formed in the flat original plate using the stamper. The configuration of the pit can be a regular configuration or an irregular configuration. In the real-33-201032140 example, the original board of the pit with a regular configuration is described. Further, the original plate may have an area of a plurality of wafers as shown in Figs. 27 to 29, or may have an area of a single wafer. <Relief hologram wafer manufacturing method Example 1 2> The one shown in Fig. 33 is the most basic embodiment. (1) The 150 series shown is a wafer master mold such as a die of a pit mold 151 which is formed to have a depth of a quarter of the wavelength of light. (2) Fill all the pit molds with uncured resin monomer 152. The uncured resin monomer is, for example, an ultraviolet curable resin. (3) Irradiation of ultraviolet rays to the monomer that does not become the position of the pit mold, and hardening into a cylinder molecule. (4) The uncured resin monomer which is not irradiated with ultraviolet rays and is not hardened is removed from the pit mold. (5) The stamper 154 is formed using the wafer original plate mold in which the pit mold is formed. (6) The stamper 154 is released from the wafer master mold 150. (7) The flat original plate is punched using the stamper 154 to form the original plate having the pit 160 ° (8). The original plate 160 having the pit is released from the stamper 154. (9) A reflective film 162 is formed on the original plate 160 having pits. (1〇) The whole is covered with a translucent resin cover 163. <Relief hologram wafer manufacturing method Example 1 3> The other embodiments are shown in Fig. 34. -34- 201032140 (1) The 150-series shown is a wafer master mold such as a mold of a pit mold 151 having a depth of one quarter of the wavelength of light used in advance. (2) Fill the uncured resin monomer 1 52 for the pit mold that does not form the final pit. As the uncured resin monomer, for example, a thermosetting resin other than the ultraviolet curable resin is used. (3) The monomer is hardened to become a polymer 153. (4) A stamper 1 54 is formed using a wafer original plate mold formed with a pit mold. φ (5) causes the stamper 154 to be released from the wafer master mold 150. The subsequent process is the same as (7) to (9) shown in Fig. 33, and therefore the description is omitted. <Relief hologram wafer manufacturing method embodiment 14> Fig. 35 shows still another embodiment. (1) The 150 original film is formed in advance by a die of a pit mold 151 having a depth of a quarter of a wavelength of light. 〇 (2) Fill all the pit molds with uncured resin monomer 152. The uncured resin monomer uses an ultraviolet curing resin. (3) A fully coated photoresist film 156. (4) The photoresist film which is the position of the pit mold is irradiated with ultraviolet rays to harden the photoresist film 157. (5) Remove the photoresist film that is not irradiated with ultraviolet rays and is not hardened. (6) The uncured resin monomer not covered with the photoresist film is irradiated with ultraviolet rays to be hardened to form a polymer 153. (7) The photoresist film and the uncured resin monomer which are covered by the photoresist film and are not irradiated with ultraviolet rays -35- 201032140 are not removed by the pit mold. (8) The stamper 154 is formed using the wafer original plate mold in which the pit mold is formed. (9) The stamper 154 is released from the wafer master mold 150. The subsequent process is the same as (7) to (9) shown in Fig. 33, and therefore the description is omitted. <Relief hologram wafer manufacturing method embodiment 15> Fig. 36 shows still another embodiment. (1) The 150-series shown is a wafer master mold such as a mold of a pit mold 151 which is formed to have a depth of a quarter of the wavelength of light. (2) Fill all the pit molds with uncured resin monomer 152. The ultraviolet curable resin is used for the uncured resin monomer. (3) The protective film 155 is formed on the uncured resin monomer 152 which eventually becomes a pit mold. As the uncured resin monomer, for example, a thermosetting resin other than the ultraviolet curable resin is used. (4) The uncured resin monomer not covered with the protective film is irradiated with ultraviolet rays. (5) The uncured resin monomer covered with the protective film and not covered by the ultraviolet ray and not hardened by the protective film is removed by the pit mold. (6) A stamper 1 54 is formed using a wafer original plate mold in which a pit mold is formed. (7) The stamper 154 is released from the wafer master mold 150. The subsequent process is the same as (7) to (9) shown in Fig. 33, and therefore the description is omitted. In the embodiment of Figs. 33 to 36, a wafer original plate of a pit mold having a depth of one of four-36 to 201032140 using a wavelength of light is used, but the depth of the pit mold is made plural by the same manufacturing method. It is also possible to use multi-color light. <Relief hologram wafer manufacturing method embodiment 16> A description will be briefly given of a method of irregularly arranging pits or projections of a monochromatic relief hologram wafer. In Fig. 37', 170 is a wafer in which pits 171 are irregularly arranged, and (a) is a view of φ as seen from above. (b) and (c) are cross-sectional views of the case where pits are used. The pit system opens the base 1 70 by etching or the like to form a depth of a quarter wavelength of light used. 1 7 2 is the cover. The substrate 170 is not etched and can be obtained by opening a film having a quarter wavelength of light. (d) and (e) are cross-sectional views in the case where the projections 176 are used. The projection 176 is formed by spreading a sheet having a thickness of a quarter wavelength of light on the base 175. 1 77 is the cover. <Relief hologram wafer manufacturing method embodiment 17> A description will be briefly given of a method of irregularly arranging pits or protrusions of a multi-color relief hologram wafer. In Fig. 38, 180 is a wafer in which pits 181R, 181G, and 181B having different depths are irregularly arranged, and (a) is a view seen from above. -37- 201032140 (b) and (c) are cross-sectional views of the case where pit 171 is used. The pit system opens the base body 180 by means of etching or the like to form a depth of a quarter wavelength of light used. 1 82 is the cover. The substrate 180 is not etched and can be obtained by opening a film having a quarter wavelength of light. (d) and (e) are cross-sectional views in the case where the projections 176 are used. The protrusions 176 are formed on the base 175 by using sheets 186R, 186G, 186B having a thickness of a quarter wavelength @ of light. 1 8 7 is the cover. [Industrial Applicability] The authenticity authentication chip described above and the card with the authenticity authentication chip can be applied to bank ATM cards, credit cards, prepaid cards, securities, identity cards, entry and exit control certificates, certificates, and the like. Moreover, the same as the embossed hologram, the optical pattern is produced by the interference of the incident light and the reflected light, that is, a chip having a natural material or artificial material that emits nacreous or iridescent. It can also be used instead of a full-image wafer. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an illustration of a monochromatic embossed hologram wafer having pits. Fig. 2 is an example of the arrangement of pits of a monochromatic embossed hologram wafer having pits. Fig. 3 shows a configuration of a pit of a monochromatic relief hologram wafer based on random numbers -38- 201032140. Fig. 4 is an example of the arrangement of pits of a multi-color embossed hologram wafer. Fig. 5 is a view showing an arrangement example of pits of a multi-color embossed hologram wafer. Fig. 6 is an example of the arrangement of pits of a multi-color relief hologram wafer which is formed based on random numbers. Figure 7 is a structural embodiment of a monochromatic embossed hologram wafer. Figure 8 is another embodiment of the construction of a monochromatic embossed hologram wafer. φ Fig. 9 is a structural example of a multicolor relief hologram wafer. Figure 1 Other embodiments of the construction of a bismuth embossed hologram wafer. Figure 11 is an illustration of the multi-color embossed hologram wafer of Figure 10. Fig. 12 is a still further embodiment of the construction of a multi-color relief hologram wafer. Figure 13 is an illustration of the multi-color embossed hologram wafer of Figure 12. Fig. 14 is a still further embodiment of the construction of a multi-color relief hologram wafer. 〇 Figure 1 5 is a description of the multicolor embossed hologram wafer of Figure 14. Figure 16 is an illustration of a monochromatic embossed hologram wafer having protrusions. Figure 17 is an illustration of a multi-color embossed hologram wafer having protrusions. Figure 18 is an illustration of a monochromatic embossed hologram wafer with pits and protrusions. Figure 19 is an illustration of a multi-color embossed hologram wafer having pits and protrusions. Figure 20 is a schematic illustration of the principle of construction color. Fig. 21 is a view showing a pit which produces a embossed hologram phenomenon and a structural color phenomenon. Fig. 22 is a diagram showing the phenomenon of embossing hologram phenomenon and structural color phenomenon. -39- 201032140. Figure 23 is an illustration of a method of obtaining a plurality of embossed hologram wafers. Figure 24 is an illustration of a method of obtaining a plurality of cards having embossed hologram wafers. Figure 25 is an illustration of other methods of obtaining a plurality of embossed hologram wafers. Fig. 26 is an illustration of another method for obtaining a plurality of embossed hologram wafers. Figure 27 is an illustration of another method for obtaining a multi-embossed hologram wafer. Fig. 28 is an illustration of another method for obtaining a plurality of embossed hologram wafers. Figure 29 is an illustration of a principle method of fabricating a monochromatic embossed hologram wafer having pits. Figure 30 is an illustration of another method of fabricating a monochromatic embossed hologram wafer having pits. Figure 31 is an illustration of another method of fabricating a monochromatic embossed hologram wafer having pits. Figure 3 is an illustration of yet another method of fabricating a monochromatic embossed hologram wafer having pits. Figure 33 is an illustration of a schematic method for fabricating a monochromatic embossed hologram wafer having pits using a stamper. Figure 34 is an illustration of another method of fabricating a monochromatic embossed hologram wafer having pits using a stamper. Fig. 35 is a view showing another method of manufacturing a monochromatic embossed hologram wafer having a pit using a stamper. Fig. 36 is an illustration of another method of manufacturing a monochromatic relief hologram wafer having pits using a stamper. Figure 37 is an illustration of a method of irregularly arranging pits or protrusions of a monochromatic relief hologram wafer. Figure 38 is an illustration of a method of irregularly arranging pits or protrusions of a multi-color relief hologram wafer. [Main component symbol description] 1 : Card 5: Embossed hologram wafer 7, 11, 16, 21, 26, 31, 36, 41: Embossed hologram pit 52, 56 '62, 68: Embossed hologram protrusion 72 ' 73 : Embossed holographic structure color pit 84, 85: embossed holographic structure color protrusions 1, 105, 110, 115, 120, 130: original plate 140: wafer substrate 150: substrate mold 154: stamper -41 -