201029063 六、發明說明： 【發明所屬之技術領域】 [〇〇1]本發明侧於—種晶圓之研磨方法，制是-種利用含 有鑽石成分之研磨輪進行研磨之晶圓研磨方法。 【先前技術】 [002] 發光二極體(Light Emitting Di〇de; led)是半導體中之一 種’其應關域廣泛，發光二極體所發出之絲主要分為可見光 φ與不可見光兩大類’由於發光二極體具備壽命長、速度快、耗電 量低、及單色性鱗優點’隨著高亮度紅、黃、藍光發光二極體 的發展’使得市場逐漸歡，目前可見光之發光二極體被廣泛的 應用在大型絲看板、資訊顯示板、汽車、掃描器、號諸燈、大 哥大背光源等各麵途上，從日常生活之家電製品到各種大小之 電子裝置幾乎都裝設有發光二極體（led)。 [003] 在目前藍光LED辦晶製程巾較相的基板係為藍寶 φ石純㈣卯細wafer)，藍*LED曰曰曰粒的品質與其使用之原料材 質藍寶石基板息息相關，其薄化、拋光與平坦化製程—直是量產 良率及成本的關鍵之一。 * [〇〇4]先岫技術所揭露之藍寶石晶圓研磨方法，可參考中華民 —國專利公告第㈣別賴揭露之藍寶石晶圓研磨方法，其係將藍 寶石晶圓固定在-固定座上，並將固定座再固定在一研削機台 上’以研磨藍寶石晶圓上之基板’接著將固定座擺放到拋光盤上 再進行減薄基板之動作，最後利用蝕刻法將基板完全去除。本發 明可降低成本，使得藍寶石晶圓之基板移除時間縮短，並於製作 201029063 發光二極體時可縮短製程時間 常運作而降低危險。 ’且使得發光二極體可在高溫下正 _目前一般研磨藍寶石晶圓的砂輪，以7mm之尺寸而+ 一組大約是新终75觸元，其可研磨大約謂片之晶圓，因°此 早片之成本大喊新㈣21元，如此高之成本確有改善之空間。 =在發光二極體價袼不斷下降的情況下，製程中各種相關成本的 控制對於廠商㈣遂成為亟待解決的問題。201029063 VI. Description of the Invention: [Technical Field of the Invention] [Invention 1] The present invention is directed to a method for polishing a wafer, which is a wafer polishing method using a grinding wheel containing a diamond component. [Prior Art] [002] Light Emitting Diode (LED) is one of the semiconductors. It has a wide range of contacts. The filaments emitted by the LEDs are mainly divided into visible light φ and invisible light. 'Because of the long life, high speed, low power consumption, and the advantages of monochromatic scales, the luminous diodes have become more and more popular with the development of high-brightness red, yellow and blue light-emitting diodes. Diodes are widely used in large-scale silk billboards, information display panels, automobiles, scanners, lamps, and backlights of big brothers. From home appliances to everyday life, almost all electronic devices of various sizes are installed. There are light-emitting diodes (led). [003] At present, the substrate of the blue LED wafer processing machine is sapphire φ stone pure (four) 卯 fine wafer), the quality of the blue * LED enamel is closely related to the raw material sapphire substrate used, and it is thinned, Polishing and flattening processes – one of the keys to mass production yield and cost. * [〇〇4] The sapphire wafer grinding method disclosed in the 岫 岫 technology can refer to the sapphire wafer grinding method disclosed in the Chinese People's Republic of China Patent Notice (4), which fixes the sapphire wafer on the fixed seat. And fixing the fixing seat to a grinding machine table to "grind the substrate on the sapphire wafer" and then placing the fixing seat on the polishing plate to perform the action of thinning the substrate, and finally removing the substrate by etching. The invention can reduce the cost, shorten the substrate removal time of the sapphire wafer, and shorten the process time and reduce the danger when the 201029063 light-emitting diode is fabricated. 'And the LEDs can be made at high temperatures. _ The current grinding wheel for sapphire wafers is generally 7mm in size. + One set is about the new 75th contact, which can grind the wafers about the wafer. The cost of this early film shouted new (four) 21 yuan, so the cost of such a high there is room for improvement. = In the case of the continuous decline in the price of LEDs, the control of various related costs in the process has become an urgent problem for manufacturers (4).
【發明内容】 _]有鑑於以上的問題，本發明揭露_種晶圓及其晶圓研磨 方法，朗時揭露研磨該晶圓之砂輪。核於發光二極體的價格 下降，因此，本發贿過兩道研絲序的方法祕低研㈣成本。 [007] 根據本發明之實_所揭露之—種，其特徵在於該 晶圓係先透過-第-研磨輪研磨，俾使該晶_化至—第一預定 厚度，再以—第二研磨輪研磨該承載板上之該晶圓，俾使該晶圓 4化至-第一預定厚度，其巾該第—研雜係峨向方向研磨該 晶圓，該第二研磨輪係以徑向方向研磨該晶圓。 [008] 根據本發明之實施倾揭露之_種晶圓之研磨方法，包 括有提供-承載板’其中該承載板具有—個以上之晶圓；以一第 一_輪研磨該承載板上之該晶圓，俾使該晶隨化至—第一預 定厚度，其中該第-研磨輪係以縱向方向研磨該晶圓；以及以一 第二研磨輪研磨該承載板上之該晶圓，俾使該晶圓薄化至一第二 預疋厚度，其中該弟二研磨輪係以徑向方向研磨該晶圓。 [009] 根據本發明之實_所揭露之—種·，徵在於該 5 201029063 晶圓係先透過-第-研磨輪研磨，俾使該晶圓薄化至—第 厚度，再以—第二研磨輪研磨該承載板上之該晶圓，俾使該曰^ 薄化至-第二預定厚度’其中該第一研磨輪係以縱向方向研:該 晶圓，該第二研磨輪係以徑向方向研磨該晶圓。 人 [01 〇]根據轉明之實施儀揭露之—種研 發光二極，祕财⑽研雜含有之^ 30um至90mn之間。 糸”於 [011] 透過本發明所揭露之兩道研磨程序，第—道研磨程 研磨輪其成本大約是新” 5_元整，根據實際的產出計 約可研磨25GG>|之晶κ，單片研磨成本是新台幣兩元。而第二首 研磨程序可採朗樣的研磨輪。由於使用兩到研磨程序，因= 據實際的產4算，第二道研絲序的研磨輪所研磨的晶圓數可 :加到64〇0 ’因此單片的研磨成本大約是新台I 12元。兩首 =序合拍研磨縣场是14元，與先前技術單—研磨程序相 父，本發明以兩道程序進行研磨之成本較先前技術為低。即便 1研練序需要_彰卜_台，其整體之縣奴較先 術為低。 [012] 以上之關於本發咖容之說明及以下之實施方式之 明係用以示範與解釋本發日月之精神與原理，並且提供本發明之專 利申請範圍更進一步之解釋。 斧 【實施方式】 [013] 以下在實施方式中詳細敘述本發明之詳細特徵以及優 點’其内容足錢任何熟習_祕者了解本發明之技術内容並 6 201029063 •據以實Μ，且根據本說明書所揭露之内容、申請專利範圍及圖式， 任何熟習相關技藝者可輕易地理解本發明相關之目的及優點。 以下之實施例係進一步詳細說明本發明之觀點，但非以任何觀點 限制本發明之範疇。 [014]明參考『第1圖』，係為本發明所揭露之晶圓研磨方法 之流程圖’其巾該步驟的順序並非固定不變及不可或缺的，有些 步驟可同時進行、省略或增加，此流程圖係以較廣及簡易的方式 ❿描述本發_步雜徵，並_以限定本發_製造方法步驟順 序及次數。 [〇15]首先提供一承載板’其中該承載板具有一個以上之晶圓 (步驟110)。在-實施例中，晶圓係為發光二極體晶圓，通常這 些晶圓係在珅化鎵基板、藍寶石基板或者碳化石夕(sic)基板上蟲晶 所形成的發光二極體晶圓。以Ah Ga、In、p四種元素為發光層 材料在申化鎵基板上遙晶者，發出紅、撥、黃光之玻拍色系，通 ❹稱為四元發光二鋪晶圓；以GaN為材料所生產的藍、綠光發光 -極體’則稱為氮化物發光二極體晶目…般以藍寶石細沖㈣ 為基板。而承载板之一示例性之實施例可為一陶瓷材料製成之承 載板。 _]在-示例性之實施射，本發明之研磨方法更包括 一上蠛程序，其係將一或一個以上之晶圓210以躐貼附於-承載 板220上’如『第2圖』所示，接著再利用一定壓力將晶圓與承 載板固疋在一起，而在完成上躐程序後，便開始進行研磨程序。 該壓力係為2〜6kg/cm2。 7 201029063 [017]首先進行第一研磨程序，以一第一研磨輪研磨該承載板 • 上之該晶圓，俾使該晶圓薄化至一第一預定厚度（步驟120)，接 著進行第二研磨程序，以一第二研磨輪研磨該承載板上之該晶 圓，俾使該晶圓薄化至一第二預定厚度（步驟13〇)。在一示例性 之實施例中，其中該第一預定厚度大致上為 180um 直 240um 之 問。其中該第二預定厚度大致上為1〇〇11111至B〇um之間。 [018]在一示例性之實施例中’第一研磨程序用之第一研磨 • 輪，該第一研磨輪之成分係由鑽石及樹脂組成，第一研磨輪的鑽 石粒徑大約是介於3〇um至90um之間。 [〇19]在一示例性之實施例中’可使用加工器具以進行第一研 磨私序。如『第3圖』所示，在第一研磨程序中，係將貼附有複 數個晶圓之複數個承載板210固定於一第一研磨機台上之基板 31〇 上。 、[020]接著一傳動裝置320將帶動第一研磨輪330前進、後退 % 或左右移動以對晶圓進行研磨。在先前技術中，係以第一研磨輪 之^向面對晶圓進行研磨。而本發鴨以第—研磨輪之縱向面對 /曰θ圓進行研磨。當晶圓的厚度以薄化至1⑽至之間 . 後’即可進行第二研磨程序。而上述之傳動裝置32〇係受到—控 . 制^置（圖中未示）所控制，控制裝置中則可輸入研磨參數，以 、田控制晶圓210之研磨厚度、研磨時間及研磨方式等。這些參 數匕括有X軸速度、γ軸速度、z軸速度以及第—研磨輪之轉速。 产谁[〇21]在第—研磨程序’係將第—研絲序研磨完畢之晶圓繼 只仃溥化的製程。其係可使用專用的機台繼續進行。而在—示 201029063 例性的實施例中’可使用如『第4圖』所示之第二研磨機台。 [022]首先，利用吸真空之方式，將貼附有晶圓210之承載板 22〇固定於第二研磨機台4〇〇之第一傳動裝置41〇上，而此第一傳 動裝置410能帶動承載板220及其上之晶圓21〇前進、後退以及 旋轉或上下左右移動；在固定好承載板22〇後，即可操作一控制 裝置440,使其控制第一傳動裝置41〇帶動該承載板22〇向第二研SUMMARY OF THE INVENTION In view of the above problems, the present invention discloses a wafer and a wafer polishing method thereof, and discloses a grinding wheel for polishing the wafer. The price of the light-emitting diodes has dropped, so the method of bribing the two methods of researching the secrets is low. [007] According to the invention, the wafer is firstly ground through a -first grinding wheel to cause the crystal to be - first predetermined thickness, and then - second grinding Grinding the wafer on the carrier plate to rotate the wafer 4 to a first predetermined thickness, and polishing the wafer in a direction of the first grinding wheel, the second grinding wheel is radially The wafer is polished in the direction. [008] A method for polishing a wafer according to an embodiment of the present invention includes a supply-bearing plate in which the carrier has more than one wafer; and grinding the carrier on a first wheel The wafer is caused to pass to the first predetermined thickness, wherein the first grinding wheel grinds the wafer in a longitudinal direction; and the second grinding wheel is used to polish the wafer on the carrier plate, The wafer is thinned to a second pre-twist thickness, wherein the second grinding wheel grinds the wafer in a radial direction. [009] According to the invention, the invention is characterized in that the 5 201029063 wafer is first ground through the --grinding wheel, and the wafer is thinned to a thickness of -, and then - second Grinding the wafer to polish the wafer on the carrier plate to thin the crucible to a second predetermined thickness, wherein the first grinding wheel is ground in a longitudinal direction: the wafer, the second grinding wheel is diametered The wafer is ground in a direction. People [01 〇] According to the implementation of the illuminating instrument - the research of the light bipolar, secret wealth (10) research mixed with ^ 30um to 90mn.于"[011] Through the two grinding procedures disclosed in the present invention, the cost of the first grinding grinding wheel is about 5" yuan, and the crystal granules of 25 GG can be ground according to the actual output. The cost of single piece grinding is NT$2. The second grinding program can be used to sample the grinding wheel. Due to the use of the two-to-grinding procedure, the number of wafers polished by the grinding wheel of the second grinding thread can be: added to 64〇0', so the grinding cost of the single piece is about the new station I 12 yuan. The two = sequel to the grind county is 14 yuan, and the cost of the invention in two procedures is lower than the prior art, as opposed to the prior art single-grinding procedure. Even if the 1st training order needs _Zhang Bu _ Taiwan, the overall county slave is lower than the predecessor. The above description of the present invention and the following embodiments are intended to illustrate and explain the spirit and principles of the present invention, and to provide further explanation of the scope of the patent application of the present invention. Axe [Embodiment] [013] Hereinafter, detailed features and advantages of the present invention will be described in detail in the embodiments. [The content is sufficient for any familiarity. The secret person understands the technical content of the present invention and 6 201029063. The related objects and advantages of the present invention can be readily understood by those skilled in the art from the disclosure of the disclosure. The following examples are intended to describe the present invention in further detail, but are not intended to limit the scope of the invention. [014] Referring to "Fig. 1", it is a flow chart of the wafer polishing method disclosed in the present invention. The order of the steps is not fixed and indispensable, and some steps can be performed simultaneously, omitted or Increasingly, this flow chart describes the present invention in a relatively broad and simple manner, and _ to limit the order and number of steps of the method. [15] First, a carrier board is provided, wherein the carrier board has more than one wafer (step 110). In the embodiment, the wafer is a light-emitting diode wafer, and the wafer is usually a light-emitting diode wafer formed on a gallium-tellide substrate, a sapphire substrate or a carbonized sic substrate. . The four elements of Ah Ga, In, and p are used as the light-emitting layer material to be crystallized on the substrate of Shenhua, and the red, yellow, and yellow light are used to make the glass color of the red, dial, and yellow light. The blue and green light-polar body produced by the material is called a nitride light-emitting diode crystal. The sapphire fine-grain (four) is used as a substrate. An exemplary embodiment of the carrier plate can be a carrier plate made of a ceramic material. _] In an exemplary embodiment, the polishing method of the present invention further includes a capping process for attaching one or more wafers 210 to the carrier plate 220 as shown in FIG. 2 As shown, the wafer is then fixed to the carrier plate with a certain pressure, and after the loading process is completed, the grinding process is started. The pressure is 2 to 6 kg/cm2. 7 201029063 [017] First performing a first polishing process, grinding the wafer on the carrier plate with a first grinding wheel, thinning the wafer to a first predetermined thickness (step 120), and then performing the In the second polishing process, the wafer on the carrier plate is polished by a second grinding wheel to thin the wafer to a second predetermined thickness (step 13A). In an exemplary embodiment, wherein the first predetermined thickness is substantially 180 um straight 240 um. Wherein the second predetermined thickness is substantially between 1〇〇11111 and B〇um. [018] In an exemplary embodiment, the first grinding wheel for the first grinding process, the composition of the first grinding wheel is composed of diamond and resin, and the diamond diameter of the first grinding wheel is approximately 3〇um to 90um. [〇19] In an exemplary embodiment, a processing tool can be used to perform the first grinding private sequence. As shown in Fig. 3, in the first polishing process, a plurality of carrier plates 210 to which a plurality of wafers are attached are fixed to a substrate 31A on a first polishing machine table. [020] Next, a transmission 320 will drive the first grinding wheel 330 forward, backward, or left and right to grind the wafer. In the prior art, the wafer is ground with the first grinding wheel facing the wafer. The hair duck is ground in the longitudinal direction of the first grinding wheel / 曰 θ circle. The second polishing process can be performed after the thickness of the wafer is thinned to between 1 (10) and . The above-mentioned transmission device 32 is controlled by a control device (not shown), and the control device can input the polishing parameters to control the polishing thickness, polishing time and grinding method of the wafer 210. . These parameters include the X-axis speed, the γ-axis speed, the z-axis speed, and the speed of the first grinding wheel. Who produces [〇21] in the first-grinding process, which is the process of polishing the wafers that have been ground-finished. It can be continued using a dedicated machine. In the exemplary embodiment of 201029063, a second grinding machine as shown in Fig. 4 can be used. [022] First, the carrier plate 22 to which the wafer 210 is attached is fixed to the first transmission device 41 of the second polishing machine 4 by vacuum suction, and the first transmission 410 can The carrier plate 220 and the wafer 21 thereon are driven forward, backward and rotated or moved up and down and left and right; after the carrier plate 22 is fixed, a control device 440 can be operated to control the first transmission device 41 to drive the Carrying board 22 to the second research
磨輪420移動，此第二研磨輪420係固定於一第二傳動裝置430 上，並在第二傳動裝置42的帶動下維持旋轉狀態，且位置保持不 變，而上述之控制震置伽則可輸入研磨參數，以適當控制鑽石 晶圓210之研磨厚度、研磨時間及研磨方式等；因此，接著第一 傳動裝置_會在控制裝置_的控制下，透過承載板22〇帶動 鑽石晶圓21G前進，使其與旋轉之第二研磨輪相接觸以進行 _之動作；而在研肖，卜段時間後，控制裝置_可根據研磨參 數之設定，令第-傳域置帶動承她22〇後退，並帶動承 載板22〇旋轉或左右移動；然後第—傳動I置彻即可再重覆前 $前進與後退之過程，以讓第二研磨輪伽重覆研磨鑽石晶圓 210，直到將鑽石晶圓210研磨至所要求之厚度為止。 在另 不娜之餘财H行研磨鑽石晶圓21〇 寺，亦可透過控制裝置44〇之操控，使第一傳動裝置4 傳動裝置43〇帶動第二研磨輪.旋轉，並同： 動第二研磨輪42〇往鑽石晶圓別前進，以侧其厚度 _展置44〇更可_輸人研縣數之·，操控第—置 你第二傳練置物進機轉、前進、後退或上下 2 9 201029063 •動作’藉此達到多樣化的研磨方式及研磨效果。 -—[〇24]雖穌發明以前述之實施例揭露如上，然其並非用以限 疋本發$在不脫離本發明之精神和範圍内，所為之更動與濁飾， 均屬本發明之專娜護細。_本發騎界定之賴範圍請表 考所附之t料職目。 °月少 【圖式簡單說明】 第1圖係為本發明所揭露之晶圓研磨方法之流程圖。 I 第2圖係為將為—具有晶圓之承載板之示意圖。 第3圖係為本發明所揭露之第一硏磨程序中所使用之 具之示意圖。 & 第4圖係為本發明所揭露之第二所磨程序中所使用之加工哭 具之示意圖。 【主要元件符號說明】 210 220 310 320 330 400 410 420 430The grinding wheel 420 moves, the second grinding wheel 420 is fixed on a second transmission device 430, and is maintained in a rotating state by the second transmission device 42, and the position remains unchanged, and the above-mentioned control vibration gamma can be The grinding parameters are input to appropriately control the grinding thickness, the grinding time, the grinding method, and the like of the diamond wafer 210; therefore, the first transmission device _ will then drive the diamond wafer 21G through the carrier plate 22 under the control of the control device. , in contact with the rotating second grinding wheel to perform the action of _; and after the time of the study, the control device _ can be set according to the setting of the grinding parameter, so that the first-passing zone can move her 22 〇 backward And driving the carrier plate 22 to rotate or move left and right; then the first transmission I can be repeated to repeat the process of the front and the back, so that the second grinding wheel galaxes the diamond wafer 210 until the diamond is Wafer 210 is ground to the desired thickness. In the other way, the diamond wafer wafer 21〇 temple can be grounded by the control device 44〇, so that the first transmission device 4 drive device 43〇 drives the second grinding wheel to rotate, and the same: The second grinding wheel 42 goes to the diamond wafer to advance, to the side of its thickness _ display 44 〇 more _ lose the number of people in the county, control the first - set your second transfer storage into the machine, forward, backward or Up and down 2 9 201029063 • Action 'To achieve a variety of grinding methods and grinding effects. - [24] Although the invention is disclosed above in the foregoing embodiments, it is not intended to limit the scope of the invention, and the invention is modified and turbid. Special care for the fine. _ The scope of the definition of this ride is to be attached to the t-item attached to the test.约月月小 [Simplified illustration of the drawings] Fig. 1 is a flow chart of the wafer polishing method disclosed in the present invention. I Figure 2 is a schematic diagram of a carrier board with wafers. Figure 3 is a schematic illustration of the first honing procedure disclosed in the present invention. <Fig. 4 is a schematic view of a processing crying used in the second grinding process disclosed in the present invention. [Main component symbol description] 210 220 310 320 330 400 410 420 430
晶圓 承載板 基板 傳動裝置 第一研磨輪 第二研磨機台 第一傳動裝置 第二研磨輪 第二傳動裝置 控制裝置 440Wafer carrier board substrate transmission first grinding wheel second grinding machine first transmission second grinding wheel second transmission control device 440