201027890 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種電壓調節器（Voltage Regulator) 電路，且特別是有關於一種内建接面場效電晶體（Junction Field Effect Transistor，簡稱JFET)與金氧半場效電 晶體（Metal Oxide Semiconductor Field Effect Transistor，簡稱MOSFET)，以作為啟動電晶體之功率電 晶體晶片及應用此一晶片之交/直流電壓轉換電路。· 〇 【先前技術】 隨著半導體科技的快速演進，使得例如電腦及其週邊 - 數位產品等也日益地更新。在電腦及其週邊數位產品之應 用積體電路（Integrated Circuit，簡稱1C)中，由於半導 體製程之快速變化’造成積體電路電源之更多樣化需求， 以致應用如升壓_ (B〇ost Converter)、降壓器（Buck Converter)等各種不同組合之電壓調節器電路，來達成各 參種積體電路之不同電源需求，也成為能否提供多樣化數位 產品的極重要因素之一。在各種電壓調節器電路中，交/ 直机電壓轉換電路（Ac/DC Voltage Converter)由於能將一 般市售之交流電源轉換為所需穩定之直流電源輸出，因而 乃廣泛地作為電壓調節器電路之前級電路使用。 清參考圖1所示’其為習知之一種交/直流電壓轉換電 =圖，圖中顯示，交/直流電壓轉換電路1〇包括··橋式整 、電路11功率電晶體晶片12、脈寬調變（Pulse Width 6 201027890 Μ—η ’簡稱_電路13、啟動（Start Up)電路14、 =器電路15、遽波與趣授電路16與工作電源電路Η。 其中’脈寬調變電路13係 迴授電壓大小，來產讀據輸出之直流電源V〇的 輸出穩定之直流電源V〇’T脈寬：變訊號’藉以控制並 賴一低壓直流電源來_惟“脈^調變電路13通常需仰 始時，並無可供脈寬調變電路Γ3工: ,,^ 建/皮之直》瓜電源’因此，即可夢由組 ==之電:引入脈寬調變電路13中，以作為其 工作，以依據，脈寬調變電路13即得以開始正常 睿 功率電晶體晶片二 路ig啟動並輸出穩定之錢電源 供較為穩定之工:：15之工作電源電路17，即可接手提 地工^ 作電源，使脈寬調變電路13可以更為穩定 作，===使交/直流電祕換電U正常地工 處於田定工作後，啟動電路14應可功成身退 2 ==態广作效能而言，不免有所缺失。 與圖3所示地，以空乏型金氧半場效電晶 201027890 體（Depletion Metal Oxide Semiconductor Field Effect201027890 IX. Description of the Invention: [Technical Field] The present invention relates to a voltage regulator circuit, and more particularly to a built-in junction field effect transistor (JFET) And a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for use as a power transistor wafer for starting a transistor and an AC/DC voltage conversion circuit for applying the same. · 〇 [Prior Art] With the rapid evolution of semiconductor technology, for example, computers and their peripherals - digital products are also increasingly updated. In the application of Integrated Circuit (1C) for digital products in the computer and its surrounding products, due to the rapid changes in semiconductor manufacturing process, the demand for integrated circuit power supplies has become more diverse, resulting in applications such as boost _ (B〇ost Various voltage regulator circuits, such as Converter) and Buck Converter, are used to achieve different power requirements for each integrated circuit, and are also one of the most important factors in providing a variety of digital products. Among various voltage regulator circuits, the AC/DC Voltage Converter is widely used as a voltage regulator circuit because it converts a commercially available AC power supply into a desired stable DC power supply output. The previous stage circuit is used. Referring to FIG. 1 , which is a conventional AC/DC voltage conversion electric= diagram, the AC/DC voltage conversion circuit 1 〇 includes a bridge type, a circuit 11 power transistor wafer 12, and a pulse width. Modulation (Pulse Width 6 201027890 Μ-η 'referred to as _ circuit 13, Start Up circuit 14, = circuit 15, chopping and fun circuit 16 and operating power circuit Η. Where 'pulse width modulation circuit 13 series feedback voltage, to produce the output of the DC power supply V〇 output stable DC power supply V〇 'T pulse width: variable signal 'by control and rely on a low-voltage DC power supply _ only "pulse Road 13 usually needs to start at the beginning, there is no pulse width modulation circuit Γ3 work: ,, ^ Jian / leather straight "guap power supply" Therefore, you can dream of group == electricity: introduce pulse width modulation In the circuit 13, in order to work as a basis, the pulse width modulation circuit 13 can start the normal ui power transistor chip two ig start and output a stable money power supply for a more stable work: 15 working power The circuit 17 can be connected to the power source to make the pulse width modulation circuit 13 more stable. === After making the AC/DC power exchange U normal work in Tianding work, the start circuit 14 should be able to retreat 2 == state for performance, it is inevitable that there is a loss. Depletion Metal Oxide Semiconductor Field Effect
Transistor，簡稱 Depletion M0SFET)221 與 331 來取代， 並错由脈寬調變電路23或33輸出之啟動訊號st，來分別 啟斷空乏型金氧半場效電晶體221與331之運作，以節省 功率之消耗。 圖2與圖3不同的是’空乏型金氧半場效電晶體221 與331 ’係分別整合於功率電晶體晶片22與脈寬調變電路 ❹ 33之晶片中。惟，無論係採用何一方式，應用空乏型金氧 半場效電晶體221或331，來作為啟動電路之交/直流電壓 轉換電路，其晶片的製造過程，都會因為空乏型金氧半場 效電晶體221或331所增加的通道（N通道或p通道）製程， 使得其晶片的製程更為複雜。 【發明内容】 有鑑於此，本發明之目的是提供一種功率電晶體晶片 參，應用此一晶片之交/直流電壓轉換電路，其係使用接面場 =電晶體配合一金氧半場效電晶體來作為啟動電路，並將 曰面場效電晶體與金氧半場效電晶體，内建於功率電晶體 力片中。因此’不僅具有節省功率消耗之功效，更不會增 σ韻外之光罩與製程，進而可簡化製程、節省成本。 體為達上述及其他目的，本發明提供一種内建啟動電晶 此=功率電晶體晶片，可適用於一交/直流電壓轉換電路。 第功率電晶體晶片包括：第一接腳、第二接腳、第三接腳、 四接腳、第五接腳、功率電晶體、金氧半場效電晶體與 8 201027890 接面場效電晶體。其中，功率電晶體用以作為交/直流電壓 轉換電路之功率開關，其具有第一源/汲極、第二源/汲極 與功率電晶體閘極。第一源/汲極耦接第一接腳，第二源/ 汲極耦接第二接腳，功率電晶體閘極耦接第三接腳。金氧 半場效電晶體具有弟五源/沒極、弟六源/沒極與金氧半場 效電晶體閘極，第五源/汲極耦接第一接腳，第六源/汲極 柄接第四接腳。接面場效電晶體用以與金氧半場效電晶體 一同作為交/直流電壓轉換電路之啟動電路，其具有第三源 ❹ /汲極、第四源/汲極與接面場效電晶體閘極，第三源/汲極 麵接第' —接腳，第四源/汲·極輕接金氧半場效電晶體閘極， 接面場效電晶體閘極耦接第五接腳。 ' 本發明另提供一種交/直流電壓轉換電路，可將輸入之 - 交流電源轉換為穩定之直流電源輸出。此交/直流電壓轉換 電路除應用前述的内建啟動電晶體之功率電晶體晶片外， 更包括/·橋式整流電路、脈寬調變電路、變壓器電路、濾 波與迴授電路及工作電源電路。 翁 其中，橋式整流電路具有電源输入端與整流輸出端， 電源輸入端係用以接收輸入之交流電源。變壓器電路具有 主線圈、次線圈與副線圈，主線圈之一端耦接橋式整流電 路之整流輸出端、另一端耦接功率電晶體晶片之第一接 腳，也就是耦接功率電晶體之第一源/汲極、金氧半場效電 晶體之第五源/汲極與接面場效電晶體之第三源/汲極。 脈寬調變電路具有啟動電源控制端、工作電源端、脈 寬調變訊號輸出端與電流偵測端，啟動電源控制端係耦接 201027890 功率電晶體晶片之第五接腳’也就是接·面場效電晶體閘 極，以控制接面場效電晶體之啟閉，進而得以控制金氧半 場效電晶體之啟閉。工作電源端耦接功率電晶體晶片之第 四接腳’也就是金氧半場效電晶體之第六源/沒極’以接收 金氧半場效電晶體輸出之啟動電源。脈寬調變訊號輸出端 耦接功率電晶體晶片之第三接腳，也就是功率電晶體閘 極，用以依據迴授電壓的大小，來輸出調變直流電源之脈 寬調變訊號。電流偵測端耦接功率電晶體晶片之第二接 ® 腳，也就是功率電晶體之第二源/汲極，用以偵測流經功率 電晶體之電流。 工作電源電路係耦接變壓器電路之副線圈與脈寬調變 • 電路之工作電源端，用以在脈寬調變電路啟斷金氧半場效 電晶體輸出之啟動電源後，持續提供脈寬調變電路工作所 需之電源。濾波與迴授電路則耦接變壓器電路之次線圈， 用以濾波並輸出穩定之直流電源、以及提供脈寬調變電路 π 調變所需之迴授電壓。 綜上所述，由於本發明所提供之一種功率電晶體晶片 及應用此一晶片之交/直流電壓轉換電路，係使用接面場效 電晶體與金氧半場效電晶體來作為啟動電路，因而可於交/ 直流電壓轉換電路穩定工作後，啟斷接面場效電晶體與金 氧半場效電晶體之運作，以節省功率之消耗。此外，由於 係將接面場效電晶體與金氧半場效電晶體等啟動電晶體， 内建於功率電晶體晶片之中，而接面場效電晶體與金氧半 場效電晶體，係可以功率電晶體之相同製程來製作，故不 201027890 會增加額外之光罩鱼锄赵 ^ 為讓本發明之上可簡化製程、節省成本。 述和其他目的、特徵、和優點能更明 顯易懂’下文特以較隹眘 η 說明如下： 佳實轭例，並配合所附圖式，作詳細 【實施方式】 交路圖其二據本發明較佳實施例之一種 •將電源輸入端411輪入之交t雷直流電壓轉換電路4〇係可 流電源V。後輸出。圖入中之雷，趙轉換為穩定之直 橋式整流電路41、功率電曰電壓轉換電路4〇包括： .變壓器電路45、濾波4曰=:片：、脈寬調變電路43、 .功能 及工作電源電路47等 如圖所示，功率電晶體晶片42具有第一接腳421、第 —接腳422、第三接腳423、第四接腳他、第五接腳奶、 ⑩功率電晶體426、金氧半場效電晶體4烈與接面場效電晶 體427。故知’此-晶片係將作為交/直流電壓轉換電路4〇 之啟動電路用的啟動電晶體，包括接面場效電晶體奶與 金氧半場效電晶體429，整合内建於功率電晶體晶片42 中’以達成簡化父/直流電壓轉換電路4Q所使用晶片之製 '程的目的。圖中，功率電晶體426、金氧半場效電晶體429 與接面場效電晶體427 ’雖然是以N型金氧半場效電晶體 與N型接面場效電晶體為例，並於功率電晶體晶片42中， 同時内建連接功率電晶體426之閑極的電阻428，然熟習 201027890 此藝者應知，亦可採用p型金氧半場效電晶體或接面 場效電晶體等不同型式之電晶體。另外，内建之電卩I 4二 亦可選擇性地整合於脈寬調變電路43之晶片中，而a 叩無須包 含於此功率電晶體晶片42内。Transistor (Depletion M0SFET) 221 and 331 are used instead of the start signal st output from the pulse width modulation circuit 23 or 33 to respectively activate the operation of the depleted metal oxide half field effect transistors 221 and 331 to save Power consumption. 2 differs from FIG. 3 in that the 'depleted metal oxide half field effect transistors 221 and 331' are integrated in the wafer of the power transistor wafer 22 and the pulse width modulation circuit ❹ 33, respectively. However, regardless of the method used, the depletion type MOS field 221 or 331 is used as the AC/DC voltage conversion circuit of the startup circuit, and the wafer manufacturing process is due to the depletion type MOS field effect transistor. The increased channel (N-channel or p-channel) process of 221 or 331 makes the process of the wafer more complicated. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a power transistor wafer reference, which uses the AC/DC voltage conversion circuit of the chip, which uses a junction field=transistor with a gold-oxygen half field effect transistor. As a starting circuit, the surface field effect transistor and the gold oxide half field effect transistor are built into the power transistor force sheet. Therefore, not only does it have the effect of saving power consumption, but it also does not increase the reticle and process of σ, which simplifies the process and saves costs. For the above and other purposes, the present invention provides a built-in start-up transistor. This = power transistor wafer can be applied to an AC/DC voltage conversion circuit. The first power transistor wafer comprises: a first pin, a second pin, a third pin, a fourth pin, a fifth pin, a power transistor, a MOS field effect transistor and an 8 201027890 junction field effect transistor . Wherein, the power transistor is used as a power switch of the AC/DC voltage conversion circuit, and has a first source/drain, a second source/drain and a power transistor gate. The first source/drain is coupled to the first pin, the second source/drain is coupled to the second pin, and the power transistor gate is coupled to the third pin. The gold-oxygen half-field effect transistor has a younger five source/no pole, a six-source/dipole and a gold-oxygen half-field effect crystal gate, and a fifth source/drain is coupled to the first pin, and the sixth source/dip handle Connect the fourth pin. The junction field effect transistor is used as a startup circuit of the AC/DC voltage conversion circuit together with the gold oxide half field effect transistor, and has a third source/drain, a fourth source/drain and a junction field effect transistor. The gate, the third source/drain surface is connected to the first 'pin', the fourth source/汲 is extremely lightly connected to the gold oxide half field effect crystal gate, and the junction field effect transistor gate is coupled to the fifth pin. The invention further provides an AC/DC voltage conversion circuit for converting an input AC power source into a stable DC power supply output. The AC/DC voltage conversion circuit includes a power transistor chip with a built-in startup transistor, and includes a bridge rectifier circuit, a pulse width modulation circuit, a transformer circuit, a filter and feedback circuit, and a working power supply. Circuit. The bridge rectifier circuit has a power input end and a rectified output end, and the power input end is used to receive the input AC power. The transformer circuit has a primary coil, a secondary coil and a secondary coil. One end of the primary coil is coupled to the rectified output end of the bridge rectifier circuit, and the other end is coupled to the first pin of the power transistor chip, that is, the first coupled to the power transistor. A source/drainage, a fifth source/drain of the MOS field effect transistor and a third source/drain of the junction field effect transistor. The pulse width modulation circuit has a startup power control terminal, a working power terminal, a pulse width modulation signal output terminal and a current detection terminal, and the startup power control terminal is coupled to the fifth pin of the 201027890 power transistor chip. ·The field effect transistor gate controls the opening and closing of the junction field effect transistor, which in turn controls the opening and closing of the gold oxide half field effect transistor. The working power terminal is coupled to the fourth pin of the power transistor chip, that is, the sixth source/no pole of the metal oxide half field effect transistor to receive the starting power of the output of the gold oxide half field effect transistor. The pulse width modulation signal output end is coupled to the third pin of the power transistor chip, that is, the power transistor gate, for outputting the pulse width modulation signal of the modulated DC power source according to the magnitude of the feedback voltage. The current detecting end is coupled to the second pin of the power transistor chip, that is, the second source/drain of the power transistor for detecting the current flowing through the power transistor. The working power circuit is coupled to the auxiliary coil of the transformer circuit and the working voltage terminal of the pulse width modulation circuit for continuously providing the pulse width after the pulse width modulation circuit starts the power supply of the output of the metal oxide half field effect transistor. The power supply required to operate the modulation circuit. The filtering and feedback circuit is coupled to the secondary coil of the transformer circuit for filtering and outputting a stable DC power supply, and providing a feedback voltage required for the π modulation of the pulse width modulation circuit. In summary, a power transistor chip and an AC/DC voltage conversion circuit using the same according to the present invention use a junction field effect transistor and a MOS field effect transistor as a startup circuit. After the AC/DC voltage conversion circuit is stable, the operation of the junction field effect transistor and the gold oxide half field effect transistor can be turned on to save power consumption. In addition, since the contact field effect transistor and the gold oxide half field effect transistor are used to start the transistor, which is built in the power transistor wafer, the junction field effect transistor and the gold oxide half field effect transistor can be The same process of power transistor is used for the production process, so no additional light mask fish will be added to 201027890. In order to simplify the process and save cost, the invention can be simplified. The descriptions and other purposes, features, and advantages can be more clearly understood. 'The following is a more cautious η description as follows: Good yoke example, with the drawings, for details [Embodiment] The road map One of the preferred embodiments of the invention includes a t-rear DC voltage conversion circuit 4 in which the power input terminal 411 is turned in. After the output. In the figure, the lightning is converted into a stable straight bridge rectifier circuit 41, and the power voltage conversion circuit 4〇 includes: transformer circuit 45, filter 4曰=: slice: pulse width modulation circuit 43, The function and the working power circuit 47 and the like as shown in the figure, the power transistor chip 42 has a first pin 421, a first pin 422, a third pin 423, a fourth pin, a fifth pin, and 10 power. The transistor 426, the gold oxide half field effect transistor 4 and the junction field effect transistor 427. Therefore, it is known that the wafer system will be used as a start-up transistor for the start-up circuit of the AC/DC voltage conversion circuit 4, including the junction field effect transistor milk and the gold-oxygen half field effect transistor 429, integrated in the power transistor wafer. In the case of 42, the purpose of simplifying the process of using the wafer used by the parent/DC voltage conversion circuit 4Q is achieved. In the figure, the power transistor 426, the gold oxide half field effect transistor 429 and the junction field effect transistor 427' are exemplified by an N-type gold-oxygen half-field effect transistor and an N-type junction field effect transistor. In the transistor wafer 42, the resistor 428 connected to the idle pole of the power transistor 426 is built in. At the same time, the artist should know that the p-type gold oxide half field effect transistor or the junction field effect transistor can be used. Type of transistor. In addition, the built-in power module I 4 can also be selectively integrated into the chip of the pulse width modulation circuit 43, and a 叩 does not need to be included in the power transistor wafer 42.
其中，功率電晶體426係用以作為交/直流電壓轉換電 路40之功率開關，其具有耦接功率電晶體晶片第一接 腳421之第一源/汲極、耦接功率電晶體晶片&第二接腳 422之第二源/汲極與耦接功率電晶體晶片42第三接腳eg 之功率電晶體閘極。金氧半場效電晶體429具有耦接功 電晶體晶片42第一接腳421之第五源/汲極、鵪接功雷 晶體晶片42第四接腳424之第六源/汲極與金氧半場效 晶體閘極。接面場效電晶體427具有減功率:電 42第一接腳421之第三源/汲極D、耦接金氧半場效電β曰 429的金氧半場效電晶體閘極之第四源/汲極s與耦接= 電晶體晶片42第五接腳425之接面場效電晶體閘極 當交/直流電壓轉換電路40啟始時，橋式整流電路^ 自其電源輸入端411接收輸入之交流電源Vin，經全、皮整 流後自其整流輸出端412輸出-具錢波之直流電源，再 經一端與整流輸出端412耦接之變壓器電路45的主線 451，到達另一端所耦接的功率電晶體晶片42之第—接腳 421曰’也就是接面場效電晶體427之第三源/汲極〇、金好 半場效電晶體429之第五源/汲極與功率電晶體4邡 = 源Λ及極。 弟— 為了提供脈寬調變電路4 3啟始運作之電源，脈寬調變 12 201027890 包路43的工作電源端432係耦接至功率電晶體晶片42之 第四接腳424，也就是金氧半場效電晶體429之第六源/汲 極。此時，由於脈寬調變電路43所輸出之啟動訊號纣係 為低準位，其内建之電晶體436並未導通，使得脈寬調變 電路43之啟動電源控制端431具有VCC之電位。 另外’由於脈寬調變電路43的啟動電源控制端431係 耦接至功率電晶體晶片42之第五接腳425,也就是接面場 ❿效電晶體閘極G，因此，接面場效電晶體427乃導通而使 得其第四源/汲極S具有高電位，並進而驅動導通金氧半場 效電晶體429(如圖5所示），故可將橋式整流電路41輪出 之具有漣波的直流電源，傳送至金氧半場效電晶體429之 第六源/汲極’也就是功率電晶體晶片42之第四接腳424。 此時’脈寬調變電路43即藉由與金氧半場效電晶體 429之第六源/汲極耦接之工作電源端432，來取得啟始運 作之電源而開始工作。之外，並依據交/直流電壓轉換電路 參 40輸出之直流電源v〇的迴授電壓大小，來產生調變的脈 寬調變訊號自其脈寬調變訊號輸出端433輸出，再經與其 輕接之功率電晶體晶片42的第三接腳423及電阻428，傳 送至功率電晶體晶片42之功率電晶體閘極，藉以控制功率 電晶體426的啟閉時間長短，並配合耦接功率電晶體晶片 、 42之第二接腳422、用以偵測流經功率電晶體426之電流 的電流偵測端434 ’來調整脈寬調變訊號之脈寬，使交/直 流電壓轉換電路40可以輸出穩定之直流電源V〇。 當脈寬調變電路43開始工作後，變壓器電路45之次 13 201027890 線圈452即會感應電壓，並經與其辆接之濾波 46之遽波，而輸出穩定之直流電源v〇 又電路 調變所需參考的迴授電壓，則藉由圖讀波^^電路犯 之發光二極體461與光電晶體435之隔離備測=電路仙 另外，變壓器電路45之副線圈453 + 壓，並經由與細之工作電源電路4= ❹ 鲁 脈寬調變電路43之工作電源端432。此時，由於工作= 電路47所提供之穩定讀電源，已能供應脈寬調變 更為穩定地工作所需’因此，脈寬調變電路43乃 出之^動訊號st拉升為高準位，使其内建之電晶體傷導 GN=將脈寬調變電路43的啟動電源控制端你拉低至 閉極G間之逆偏壓而夾止，並進而啟斷金 331日日日體429 (如圖6所示）。故可藉由啟斷接面場 氧半^㈣7與金氧半場效電晶體429之運作，來關閉金 源電體429輸出之啟動電源。之後，便由工作電 雷跋所提供之穩定工作電源，來持續地提供脈寬調變 之功率消耗芾之電源，以節省交/直流電壓轉換電路40 内建Z =考，5與圖6所示，由於根據本實施例所提供之 電晶體電曰曰曰體之功率電晶體晶片42 ’係將包括接面場效 427與金氧半場效電晶體429之啟動電晶體，内建 勿竿電曰躺 氧半場效日日體日日片42之中，且因接面場效電晶體427、金 電晶體429與功率電晶體426間，均具有類似之 14 201027890 .摻雜結構，故可以使用相同之製程來製作，而不會增加額 外之光罩與製程，進而可達成簡化製程、節省成本之目的。 雖然本發明已以較佳實施例揭露如上，然其並非用以 -限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内所作之各種更動與潤飾，亦屬本發明之範圍。因 此，本發明之保護範圍當視後附之申請專利範圍所界定者 為準。The power transistor 426 is used as the power switch of the AC/DC voltage conversion circuit 40, and has a first source/drain coupled to the first pin 421 of the power transistor, coupled to the power transistor wafer & The second source/drain of the second pin 422 is coupled to the power transistor gate of the third pin eg of the power transistor die 42. The gold-oxygen half-field effect transistor 429 has a fifth source/drain coupling coupled to the first pin 421 of the work power crystal chip 42 and a sixth source/drain and gold oxide of the fourth pin 424 of the spliced power crystal wafer 42 Half field effect crystal gate. The junction field effect transistor 427 has a power reduction: the third source/drain D of the first pin 421 of the electric 42 and the fourth source of the gold oxide half field effect transistor gate coupled to the gold oxide half field effect transistor β曰429 /pole s and coupling = junction of the fifth chip 425 of the transistor chip 42 field effect transistor gate when the AC/DC voltage conversion circuit 40 is started, the bridge rectifier circuit ^ receives from its power input terminal 411 The input AC power source Vin is outputted from the rectified output terminal 412 after full-scale rectification, and the DC power source with the money wave is coupled to the main line 451 of the transformer circuit 45 coupled to the rectification output terminal 412 at one end, and coupled to the other end. The first pin 421' of the connected power transistor chip 42 is the third source/drain 〇 of the junction field effect transistor 427, and the fifth source/drain and power of the gold good half field effect transistor 429. Crystal 4邡 = source Λ and pole. The operating power supply terminal 432 of the package 43 is coupled to the fourth pin 424 of the power transistor die 42 in order to provide the power supply for the pulse width modulation circuit 43 to start operation. The sixth source/dippole of the gold oxide half field effect transistor 429. At this time, since the startup signal outputted by the pulse width modulation circuit 43 is low, the built-in transistor 436 is not turned on, so that the startup power control terminal 431 of the pulse width modulation circuit 43 has VCC. The potential. In addition, since the start power control terminal 431 of the pulse width modulation circuit 43 is coupled to the fifth pin 425 of the power transistor chip 42, that is, the junction field effect transistor gate G, therefore, the junction field The effect transistor 427 is turned on such that its fourth source/drain S has a high potential, and in turn drives the gold-oxygen half field effect transistor 429 (as shown in FIG. 5), so that the bridge rectifier circuit 41 can be rotated. A DC power source having a chopping wave is transmitted to the sixth source/drain of the gold-oxygen half field effect transistor 429, that is, the fourth pin 424 of the power transistor wafer 42. At this time, the pulse width modulation circuit 43 starts the operation by obtaining the power source for starting operation by the working power terminal 432 coupled to the sixth source/drain of the metal oxide half field effect transistor 429. In addition, according to the feedback voltage of the DC power supply v〇 outputted by the AC/DC voltage conversion circuit 40, the modulated pulse width modulation signal is outputted from the pulse width modulation signal output terminal 433, and then The third pin 423 and the resistor 428 of the power transistor 104 are transferred to the power transistor gate of the power transistor chip 42 to control the length of the power transistor 426, and the power is coupled. The crystal chip, the second pin 422 of the 42, and the current detecting end 434' for detecting the current flowing through the power transistor 426 adjust the pulse width of the pulse width modulation signal, so that the AC/DC voltage conversion circuit 40 can Output a stable DC power supply V〇. When the pulse width modulation circuit 43 starts to work, the third circuit of the transformer circuit 45, the 13th 201027890 coil 452, induces a voltage, and is chopped by the filter 46 connected to the vehicle, and outputs a stable DC power supply. The reference voltage of the reference is required to be isolated from the photodiode 461 and the phototransistor 435 by the read wave circuit ^= circuit fairy, the sub-coil 453 + of the transformer circuit 45 is pressed, and The fine working power supply circuit 4 = 工作 the working power terminal 432 of the Lu pulse width modulation circuit 43. At this time, due to the stable read power supply provided by the operation = circuit 47, it is possible to supply the pulse width modulation to be required to operate stably. Therefore, the pulse width modulation circuit 43 is pulled up to the high level. Bit, the built-in transistor damage guide GN=Put the start voltage control terminal of the pulse width modulation circuit 43 to the reverse bias between the closed poles G and pinch, and then start the gold 331 days The body 429 (shown in Figure 6). Therefore, the startup power of the output of the gold source 429 can be turned off by turning on the operation of the junction field oxygen half (4) 7 and the gold oxide half field effect transistor 429. After that, the power supply of the pulse width modulation is continuously provided by the stable working power supply provided by the working electric thunder, so as to save the built-in Z/test of the AC/DC voltage conversion circuit 40, 5 and FIG. It is shown that since the power transistor wafer 42' of the transistor body according to the embodiment will include the junction field effect 427 and the start-up transistor of the MOS field-effect transistor 429, the built-in transistor is built-in.曰 曰 氧 半 半 半 半 半 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 427 427 427 427 427 427 427 427 427 The same process can be used to create, without adding additional masks and processes, which can simplify the process and save costs. While the present invention has been described above in terms of the preferred embodiments thereof, it is not intended to limit the invention, and the various modifications and refinements which are made by those skilled in the art without departing from the spirit and scope of the invention are also range. Therefore, the scope of the invention is defined by the scope of the appended claims.
15 201027890 【圖式簡單說明】 圖1係顯示習知之一種交/直流電壓轉換電路圖。 圖2係顯示習知之一種應用空乏型金氧半場效電晶體 作為啟動電路之交/直流電壓轉換電路簡圖。 圖3係顯示圖2之另一種實施方式。 圖4係顯示根據本發明較佳實施例之一種交/直流電 壓轉換電路圖。 圖5係顯不圖4之功率電晶體晶片的接面場效電晶體 ® 與金氧半場效電晶體啟動導通示意圖。 圖6係顯不圖4之功率電晶體晶片的接面場效電晶體 與金氧半場效電晶體啟斷時之示意圖。 【主要元件符號說明】 10、 40交/直流電壓轉換電路 11、 41橋式整流電路 _ 411電源輸入端 412整流輸出端 12、 22、42功率電晶體晶片 221、331空乏型金氧半場效電晶體 421第一接腳 422第二接腳 423第三接腳 424第四接腳 425第五接腳 16 201027890 426功率電晶體 427接面場效電晶體 428電阻 429金氧半場效電晶體 13、23、33、43脈寬調變電路 431啟動電源控制端 432工作電源端 433脈寬調變訊號輸出端 434電流偵測端 435光電晶體 436電晶體 14啟動電路 15、 45變壓器電路 451主線圈 452次線圈 453副線圈 16、 46濾波與迴授電路 461發光二極體 17、 47工作電源電路 1715 201027890 [Simple description of the diagram] Fig. 1 shows a conventional AC/DC voltage conversion circuit diagram. Fig. 2 is a schematic view showing a conventional AC/DC voltage conversion circuit using a depletion type metal oxide half field effect transistor as a starting circuit. Figure 3 shows another embodiment of Figure 2. Fig. 4 is a circuit diagram showing an AC/DC voltage conversion circuit in accordance with a preferred embodiment of the present invention. Figure 5 is a schematic diagram showing the initiation and conduction of the junction field effect transistor ® and the MOS field effect transistor of the power transistor wafer of Figure 4. Fig. 6 is a schematic view showing the junction field effect transistor of the power transistor wafer of Fig. 4 and the metal oxide half field effect transistor when it is turned off. [Main component symbol description] 10, 40 AC/DC voltage conversion circuit 11, 41 bridge rectifier circuit _ 411 power supply input terminal 412 rectification output terminal 12, 22, 42 power transistor wafer 221, 331 depleted metal oxygen half field effect Crystal 421 first pin 422 second pin 423 third pin 424 fourth pin 425 fifth pin 16 201027890 426 power transistor 427 junction field effect transistor 428 resistor 429 gold oxygen half field effect transistor 13, 23, 33, 43 pulse width modulation circuit 431 start power control terminal 432 working power terminal 433 pulse width modulation signal output terminal 434 current detection terminal 435 photoelectric crystal 436 transistor 14 start circuit 15, 45 transformer circuit 451 main coil 452 times coil 453 sub coils 16, 46 filtering and feedback circuit 461 light emitting diodes 17, 47 working power circuit 17