CN101783344B - Power transistor chip with built-in starting transistor and application circuit thereof - Google Patents
Power transistor chip with built-in starting transistor and application circuit thereof Download PDFInfo
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- CN101783344B CN101783344B CN 200910002712 CN200910002712A CN101783344B CN 101783344 B CN101783344 B CN 101783344B CN 200910002712 CN200910002712 CN 200910002712 CN 200910002712 A CN200910002712 A CN 200910002712A CN 101783344 B CN101783344 B CN 101783344B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention relates to a power transistor chip with a built-in starting transistor and an application circuit thereof. A junction field effect transistor coordinates with a metal oxide semiconductor field effect transistor to be used as a starting circuit of an AC/DC voltage switching circuit, so that the starting circuit can be switched off to save the power consumption after a pulse width modulation circuit of the AC/DC voltage switching circuit starts to work normally. In addition, the junction field effect transistor and the metal oxide semiconductor field effect transistor are built in the power transistor chip and can be manufactured by the same process of the power transistor, so additional mask and process are not added, the process can be simplified, and the cost can be saved.
Description
Technical field
The present invention relates to a kind of voltage regulator (Voltage Regulator) circuit; And relate in particular to a kind of built-in junction field effect transistor (Junction Field Effect Transistor; Be called for short JFET) and mos field effect transistor (Metal Oxide Semiconductor Field Effect Transistor; Be called for short MOSFET), with as starting transistorized power transistor chip and using the AC/DC voltage conversion circuit of this chip.
Background technology
Along with the quick evolution of semiconductor science and technology, make that for example computer and peripheral digital product etc. thereof also upgrade day by day.Application integrated circuit (IntegratedCircuit at computer and peripheral digital product thereof; Be called for short IC) in; Because the quick variation of semiconductor technology causes the more diversified demand of ic power, so that uses the voltage modulator circuit like stepup transformer (Boost Converter), reducing transformer various various combinations such as (Buck Converter); Reach the different electrical power demand of various integrated circuits, can also become provide one of factor of the utmost importance of diversified digital product.In various voltage modulator circuits; AC/DC voltage conversion circuit (AC/DC Voltage Converter) is exported owing to converting general commercially available AC power into required galvanic current source, thereby uses as the front stage circuits of voltage modulator circuit widely.
With reference to shown in Figure 1; It is existing a kind of AC/DC voltage conversion circuit figure; Show among the figure; AC/DC voltage conversion circuit 10 comprises: bridge rectifier 11, power transistor chip 12, pulse-width modulation (Pulse Width Modulation is called for short PWM) circuit 13, startup (Start Up) circuit 14, transformer circuit 15, filtering and feedback circuit 16 and working power circuit 17.Wherein, pulse-width modulation circuit 13 is used for the feedback voltage size according to the DC power supply Vo of output, produces the pulse-width signal of modulation, controls and export galvanic current source Vo thus.But; Pulse-width modulation circuit 13 needs to rely on low-voltage dc power supply usually and drives; And AC/DC voltage conversion circuit 10 opens when beginning; Do not have and can supply the required DC power supply of pulse-width modulation circuit 13 work, thereby start-up circuit in the application drawing 14 and working power circuit 17, continuing provides its running required power supply.
When AC/DC voltage conversion circuit 10 opened the beginning, the output of bridge rectifier 11 can be exported the DC power supply with ripple, therefore, can introduce in the pulse-width modulation circuit 13 through the resistance of forming start-up circuit 14, to open the power supply of beginning running as it.Afterwards; Pulse-width modulation circuit 13 promptly is able to begin operate as normal, and the feedback voltage size with according to the DC power supply Vo that exports produces the pulse-width signal of modulation; The galvanic current of the opening and closing time length of the power transistor of power controlling transistor chip 12, and then output thus source Vo.After AC/DC voltage conversion circuit 10 starts and exports galvanic current source Vo, connect the working power circuit 17 of transformer circuit 15, can take over the working power that provides comparatively stable, pulse-width modulation circuit 13 can more stably be worked.
Though the aforementioned practice can make AC/DC voltage conversion circuit 10 normally work, yet behind the circuit steady operation, start-up circuit 14 should be retired from political life after winning tremendous successes and still is in its reset condition, in task performance, lacks to some extent unavoidably.Therefore; Like Fig. 2 and shown in Figure 3; Replace with depletion MOS's field-effect transistor (Depletion Metal Oxide Semiconductor Field EffectTransistor is called for short Depletion MOSFET) 221 and 331, and pass through the enabling signal st of pulse-width modulation circuit 23 or 33 outputs; Come to break off respectively the running of depletion MOS's field-effect transistor 221 and 331, to save the consumption of power.
What Fig. 2 was different with Fig. 3 is that depletion MOS's field-effect transistor 221 and 331 is integrated in respectively in the chip of power transistor chip 22 and pulse-width modulation circuit 33.But; Where no matter adopt formula; Use depletion MOS's field-effect transistor 221 or 331, be used as the AC/DC voltage conversion circuit of start-up circuit, the manufacture process of its chip; The capital is because raceway groove (N raceway groove or the P raceway groove) technology that depletion MOS's field-effect transistor 221 or 331 is increased makes that the technology of its chip is more complicated.
Summary of the invention
In view of this; The purpose of this invention is to provide a kind of power transistor chip and use the AC/DC voltage conversion circuit of this chip; It uses junction field effect transistor bond oxide semiconductor field effect transistor to be used as start-up circuit; And with junction field effect transistor and mos field effect transistor, in be built in the power transistor chip.Therefore, not only have the effect of saving power consumption, more can not increase extra mask and technology, and then can simplify technology, saving cost.
For reaching above-mentioned and other purpose, the present invention provides a kind of power transistor chip of built-in starting transistor, applicable to the AC/DC voltage conversion circuit.This power transistor chip comprises: first pin, second pin, the 3rd pin, the 4th pin, the 5th pin, power transistor, mos field effect transistor and junction field effect transistor.Wherein, power transistor is used for the power switch as the AC/DC voltage conversion circuit, and it has first source/drain electrode, second source/drain electrode and power transistor grid.First source/drain electrode couples first pin, and second source/drain electrode couples second pin, and the power transistor grid couples the 3rd pin.Mos field effect transistor has the 5th source/drain electrode, the 6th source/drain electrode and mos field effect transistor grid, and the 5th source/drain electrode couples first pin, and the 6th source/drain electrode couples the 4th pin.Junction field effect transistor be used for mos field effect transistor together as the start-up circuit of AC/DC voltage conversion circuit; It has the 3rd source/drain electrode, the 4th source/drain electrode and junction field effect transistor grid; The 3rd source/drain electrode couples first pin; The 4th source/drain electrode couples the mos field effect transistor grid, and the junction field effect transistor grid couples the 5th pin.
The present invention also provides a kind of AC/DC voltage conversion circuit, can the AC power of input be converted into the output of galvanic current source.This AC/DC voltage conversion circuit also comprises except that the power transistor chip of the built-in starting transistor of application of aforementioned: bridge rectifier, pulse-width modulation circuit, transformer circuit, filtering and feedback circuit and working power circuit.
Wherein, bridge rectifier has power input and rectification output end, and power input is used to receive the AC power of input.Transformer circuit has main coil, inferior coil and secondary coil; Rectification output end, the other end that one end of main coil couples bridge rectifier couples first pin of power transistor chip, just couples the 3rd source/drain electrode of the 5th source/drain electrode and junction field effect transistor of first source/drain electrode, the mos field effect transistor of power transistor.
Pulse-width modulation circuit has the power control terminal of startup, working power end, pulse-width signal output and current detecting end; Start the 5th pin that power control terminal couples power transistor chip; Junction field effect transistor grid just; With the keying of control junction field effect transistor, and then be able to control the keying of mos field effect transistor.Working power end couples the 4th pin of power transistor chip, and the 6th of mos field effect transistor the source/drain electrode just is to receive the startup power supply of mos field effect transistor output.The pulse-width signal output couples the 3rd pin of power transistor chip, and just the power transistor grid is used for the size according to feedback voltage, exports the pulse-width signal of modulation DC power supply.The current detecting end couples second pin of power transistor chip, and second of power transistor source/drain electrode just is used to detect the electric current of power transistor of flowing through.
Working power circuit couples the secondary coil of transformer circuit and the working power end of pulse-width modulation circuit; Be used for after pulse-width modulation circuit breaks off the startup power supply of mos field effect transistor output, continuing the power supply that provides pulse-width modulation circuit work required.Filtering and feedback circuit then couple the inferior coil of transformer circuit, are used for filtering and export the galvanic current source and provide pulse-width modulation circuit modulation required feedback voltage.
In sum; Because a kind of power transistor chip provided by the present invention and use the AC/DC voltage conversion circuit of this chip; Use junction field effect transistor and mos field effect transistor to be used as start-up circuit; Thereby can behind AC/DC voltage conversion circuit steady operation, break off the running of junction field effect transistor and mos field effect transistor, to save the consumption of power.In addition; Because junction field effect transistor and mos field effect transistor etc. are started transistor; In be built among the power transistor chip, and junction field effect transistor and mos field effect transistor, the transistorized same process of available horsepower is made; So can not increase extra mask and technology, and then can simplify technology, saving cost.
For letting above and other objects of the present invention, characteristic and the advantage can be more obviously understandable, the hereinafter spy be with preferred embodiment, and combines accompanying drawing, elaborates as follows:
Description of drawings
Fig. 1 shows existing a kind of AC/DC voltage conversion circuit figure;
Fig. 2 shows existing a kind of AC/DC voltage conversion circuit sketch of using depletion MOS's field-effect transistor as start-up circuit;
The another kind of execution mode of Fig. 3 displayed map 2;
Fig. 4 shows a kind of according to the preferred embodiment of the invention AC/DC voltage conversion circuit figure;
The junction field effect transistor of the power transistor chip of Fig. 5 displayed map 4 and mos field effect transistor start the conducting sketch map;
Sketch map when the junction field effect transistor of the power transistor chip of Fig. 6 displayed map 4 and mos field effect transistor break off.
Embodiment
With reference to shown in Figure 4, it be a kind of according to the preferred embodiment of the invention AC/DC voltage conversion circuit figure, and the AC power Vin that this AC/DC voltage conversion circuit 40 can be imported power input 411 exports after converting galvanic current source Vo into.Among the figure, AC/DC voltage conversion circuit 40 comprises: functional blocks such as bridge rectifier 41, power transistor chip 42, pulse-width modulation circuit 43, transformer circuit 45, filtering and feedback circuit 46 and working power circuit 47.
As shown in the figure, power transistor chip 42 has first pin 421, second pin 422, the 3rd pin 423, the 4th pin 424, the 5th pin 425, power transistor 426, mos field effect transistor 429 and junction field effect transistor 427.The old friend; The startup transistor that this chip will be used as the start-up circuit of AC/DC voltage conversion circuit 40; Comprise junction field effect transistor 427 and mos field effect transistor 429; Be built in the integration in the power transistor chip 42, to reach the purpose of the technology of simplifying AC/DC voltage conversion circuit 40 chips that used.Among the figure; Power transistor 426, mos field effect transistor 429 and junction field effect transistor 427; Though be to be example with N type metal oxide semiconductor field-effect transistor and N type junction field effect transistor; And in power transistor chip 42; Build the resistance 428 of the grid that connects power transistor 426 simultaneously, right those skilled in the art should know, also can adopt the transistor of different types such as P-type mos field-effect transistor or P type junction field effect transistor.In addition, in the resistance 428 built also optionally be integrated in the chip of pulse-width modulation circuit 43, and need not be contained in this power transistor chip 42.
Wherein, Power transistor 426 is used for the power switch as AC/DC voltage conversion circuit 40, the power transistor grid that it has second source of first source that couples power transistor chip 42 first pins 421/drain, couple power transistor chip 42 second pins 422/drain and couples power transistor chip 42 the 3rd pin 423.Mos field effect transistor 429 has the 5th source that couples power transistor chip 42 first pins 421/drain, couple the 6th source/drain electrode and mos field effect transistor grid of power transistor chip 42 the 4th pin 424.The 4th source/drain electrode S and the junction field effect transistor grid G that couples power transistor chip 42 the 5th pin 425 of the mos field effect transistor grid that junction field effect transistor 427 has the 3rd source/drain D of coupling power transistor chip 42 first pins 421, couple mos field effect transistor 429.
When AC/DC voltage conversion circuit 40 opens the beginning; Bridge rectifier 41 receives the AC power Vin of input from its power input 411; After full-wave rectification, export DC power supply with ripple from its rectification output end 412; The main coil 451 of the transformer circuit 45 that couples through an end and rectification output end 412 again; Arrive first pin 421 of the power transistor chip 42 that the other end coupled, first source/drain electrode of the 5th source/drain electrode of the 3rd source of junction field effect transistor 427/drain D, mos field effect transistor 429 just and power transistor 426.
In order to provide pulse-width modulation circuit 43 to open the power supply of beginning running, the working power end 432 of pulse-width modulation circuit 43 is coupled to the 4th pin 424 of power transistor chip 42, just the 6th of mos field effect transistor 429 the source/drain electrode.At this moment, because the enabling signal st that pulse-width modulation circuit 43 is exported is an electronegative potential, the not conducting of transistor 436 of The built-in makes the startup power control terminal 431 of pulse-width modulation circuit 43 have the current potential of VCC.
In addition; Because the startup power control terminal 431 of pulse-width modulation circuit 43 is coupled to the 5th pin 425 of power transistor chip 42; Junction field effect transistor grid G just, therefore, junction field effect transistor 427 conductings and make its 4th source/drain electrode S have high potential; And and then drive conducting mos field effect transistor 429 (as shown in Figure 5); So can the DC power supply with ripple of bridge rectifier 41 outputs be sent to the 6th source/drain electrode of mos field effect transistor 429, just the 4th pin 424 of power transistor chip 42.
At this moment, the working power end 432 that pulse-width modulation circuit 43 promptly couples through the 6th source/drain electrode with mos field effect transistor 429 is obtained the power supply that opens beginning running and is started working.Outside; And according to the feedback voltage size of the DC power supply Vo of AC/DC voltage conversion circuit 40 output; The pulse-width signal that produces modulation is from its pulse-width signal output 433 outputs; The 3rd pin 423 and the resistance 428 of the power transistor chip 42 that couples with it of warp again; Be sent to the power transistor grid of power transistor chip 42, the opening and closing time length of power controlling transistor 426 thus, and combine to couple power transistor chip 42 second pin 422, be used to detect the current detecting end 434 of electric current of power transistor 426 of flowing through; Adjust the pulsewidth of pulse-width signal, make AC/DC voltage conversion circuit 40 can export galvanic current source Vo.
After pulse-width modulation circuit 43 was started working, the inferior coil 452 of transformer circuit 45 promptly can induced voltage, and the filtering that couples with it of warp and the filtering of feedback circuit 46, and output galvanic current source Vo.The feedback voltage of the required reference of pulse-width modulation circuit 43 modulation then gets through the light-emitting diode 461 of filtering and feedback circuit 46 among the figure and the isolation detection of photistor 435.
In addition, the secondary coil 453 of transformer circuit 45 is induced voltage simultaneously also, and via the filtering of the working power circuit that couples with it 47, and is sent to the working power end 432 of pulse-width modulation circuit 43.At this moment; Because the steady operation power supply that working power circuit 47 is provided; Can supply pulse-width modulation circuit 43 and more stably work requiredly, therefore, pulse-width modulation circuit 43 draws high the enabling signal st of output to be high potential; Make transistor 436 conductings of The built-in; And then the startup power control terminal 431 of pulse-width modulation circuit 43 is pulled low to the GND earth potential, cause the 4th source/drain electrode S and the reverse blas between the junction field effect transistor grid G of junction field effect transistor 427 and press from both sides and end, and and then break off mos field effect transistor 429 (as shown in Figure 6).So can close the startup power supply of mos field effect transistor 429 outputs through breaking off the running of junction field effect transistor 427 and mos field effect transistor 429.Afterwards, the steady operation power supply that is just provided by working power circuit 47 to provide constantly pulse-width modulation circuit 43 work required power supply, to save the power consumption of AC/DC voltage conversion circuit 40.
With reference to Fig. 5 and shown in Figure 6; Because power transistor chip 42 according to the built-in starting transistor that present embodiment provided; The startup transistor that will comprise junction field effect transistor 427 and mos field effect transistor 429, in be built among the power transistor chip 42, and because of 426 of junction field effect transistor 427, mos field effect transistor 429 and power transistors; All has similar doped structure; So can use identical technology to make, and can not increase extra mask and technology, and then can reach and simplify technology, cost-effective purpose.
Though the present invention discloses as above with preferred embodiment, so it is not to be used to limit the present invention, any those skilled in the art, and various changes and retouching not breaking away from the spirit and scope of the present invention to be done also belong to scope of the present invention.Therefore, protection scope of the present invention is as the criterion when looking the accompanying Claim scope person of defining.
Claims (8)
1. the power transistor chip of a built-in starting transistor is applicable to the AC/DC voltage conversion circuit, comprising:
First pin;
Second pin;
The 3rd pin;
The 4th pin;
The 5th pin;
Power transistor; Be used for power switch as said AC/DC voltage conversion circuit; Have first source/drain electrode, second source/drain electrode and power transistor grid; Said first source/drain electrode couples said first pin, and said second source/drain electrode couples said second pin, and said power transistor grid couples said the 3rd pin;
Mos field effect transistor has the 5th source/drain electrode, the 6th source/drain electrode and mos field effect transistor grid, and said the 5th source/drain electrode couples said first pin, and said the 6th source/drain electrode couples said the 4th pin; And
Junction field effect transistor; Be used for said mos field effect transistor together as the start-up circuit of said AC/DC voltage conversion circuit; Have the 3rd source/drain electrode, the 4th source/drain electrode and junction field effect transistor grid; Said the 3rd source/drain electrode couples said first pin, and said the 4th source/drain electrode couples said mos field effect transistor grid, and said junction field effect transistor grid couples said the 5th pin.
2. power transistor chip as claimed in claim 1 also comprises the resistance between between said power transistor grid and said the 3rd pin.
3. power transistor chip as claimed in claim 1, wherein said power transistor are N type metal oxide semiconductor field-effect transistor.
4. power transistor chip as claimed in claim 1, wherein said junction field effect transistor are N type junction field effect transistor, and said mos field effect transistor is a N type metal oxide semiconductor field-effect transistor.
5. an AC/DC voltage conversion circuit is applicable to convert AC power into the galvanic current source, comprising:
Power transistor chip, said power transistor chip comprises:
First pin;
Second pin;
The 3rd pin;
The 4th pin;
The 5th pin;
Power transistor; Be used for power switch as said AC/DC voltage conversion circuit; Have first source/drain electrode, second source/drain electrode and power transistor grid; Said first source/drain electrode couples said first pin, and said second source/drain electrode couples said second pin, and said power transistor grid couples said the 3rd pin;
Mos field effect transistor has the 5th source/drain electrode, the 6th source/drain electrode and mos field effect transistor grid, and said the 5th source/drain electrode couples said first pin, and said the 6th source/drain electrode couples said the 4th pin; And
Junction field effect transistor; Be used for said mos field effect transistor together as the start-up circuit of said AC/DC voltage conversion circuit; Have the 3rd source/drain electrode, the 4th source/drain electrode and junction field effect transistor grid; Said the 3rd source/drain electrode couples said first pin, and said the 4th source/drain electrode couples said mos field effect transistor grid, and said junction field effect transistor grid couples said the 5th pin;
Bridge rectifier has power input and rectification output end, and said power input is used to receive said AC power;
Transformer circuit has main coil, inferior coil and secondary coil, and an end of said main coil couples said first pin that said rectification output end, the other end couple said power transistor chip;
Pulse-width modulation circuit; Have the power control terminal of startup, working power end, pulse-width signal output and current detecting end, said startup power control terminal couples said the 5th pin, to control the keying of said junction field effect transistor; And then be able to control the keying of said mos field effect transistor; Said working power end couples said the 4th pin, and to receive the startup power supply of said mos field effect transistor output, said pulse-width signal output couples said the 3rd pin; Be used for size according to feedback voltage; Export the pulse-width signal of the said DC power supply of modulation, said current detecting end couples said second pin, is used to detect the electric current of said power transistor of flowing through;
Working power circuit couples the said secondary coil of said transformer circuit and the said working power end of said pulse-width modulation circuit, is used for after said pulse-width modulation circuit breaks off said startup power supply, continues to provide said pulse-width modulation circuit work required power supply; And
Filtering and feedback circuit couple said coil of said transformer circuit, are used for filtering and export said DC power supply and provide said pulse-width modulation circuit modulation required said feedback voltage.
6. AC/DC voltage conversion circuit as claimed in claim 5, wherein said power transistor chip also comprise the resistance between between said power transistor grid and said the 3rd pin.
7. AC/DC voltage conversion circuit as claimed in claim 5, wherein said power transistor are N type metal oxide semiconductor field-effect transistor.
8. AC/DC voltage conversion circuit as claimed in claim 5, wherein said junction field effect transistor are N type junction field effect transistor, and said mos field effect transistor is a N type metal oxide semiconductor field-effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910002712 CN101783344B (en) | 2009-01-19 | 2009-01-19 | Power transistor chip with built-in starting transistor and application circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910002712 CN101783344B (en) | 2009-01-19 | 2009-01-19 | Power transistor chip with built-in starting transistor and application circuit thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101783344A CN101783344A (en) | 2010-07-21 |
| CN101783344B true CN101783344B (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910002712 Expired - Fee Related CN101783344B (en) | 2009-01-19 | 2009-01-19 | Power transistor chip with built-in starting transistor and application circuit thereof |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103887961B (en) * | 2014-04-18 | 2015-06-10 | 杭州士兰微电子股份有限公司 | Switching power supply and controller thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115369A (en) * | 1990-02-05 | 1992-05-19 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
| CN101304222A (en) * | 2007-05-09 | 2008-11-12 | 群康科技(深圳)有限公司 | AC/DC switching circuit |
-
2009
- 2009-01-19 CN CN 200910002712 patent/CN101783344B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115369A (en) * | 1990-02-05 | 1992-05-19 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
| CN101304222A (en) * | 2007-05-09 | 2008-11-12 | 群康科技(深圳)有限公司 | AC/DC switching circuit |
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| Publication number | Publication date |
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| CN101783344A (en) | 2010-07-21 |
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