CN101783344A - Power transistor chip with built-in starting transistor and application circuit thereof - Google Patents
Power transistor chip with built-in starting transistor and application circuit thereof Download PDFInfo
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- CN101783344A CN101783344A CN 200910002712 CN200910002712A CN101783344A CN 101783344 A CN101783344 A CN 101783344A CN 200910002712 CN200910002712 CN 200910002712 CN 200910002712 A CN200910002712 A CN 200910002712A CN 101783344 A CN101783344 A CN 101783344A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
The invention relates to a power transistor chip with a built-in starting transistor and an application circuit thereof. A junction field effect transistor coordinates with a metal oxide semiconductor field effect transistor to be used as a starting circuit of an AC/DC voltage switching circuit, so that the starting circuit can be switched off to save the power consumption after a pulse width modulation circuit of the AC/DC voltage switching circuit starts to work normally. In addition, the junction field effect transistor and the metal oxide semiconductor field effect transistor are built in the power transistor chip and can be manufactured by the same process of the power transistor, so additional mask and process are not added, the process can be simplified, and the cost can be saved.
Description
Technical field
The present invention relates to a kind of voltage regulator (Voltage Regulator) circuit, and relate in particular to a kind of built-in junction field effect transistor (Junction Field Effect Transistor, be called for short JFET) and mos field effect transistor (Metal Oxide Semiconductor Field Effect Transistor, be called for short MOSFET), with as starting transistorized power transistor chip and using the AC/DC voltage conversion circuit of this chip.
Background technology
Along with the quick evolution of semiconductor science and technology, make that for example computer and peripheral digital product etc. thereof also upgrade increasingly.Application integrated circuit (IntegratedCircuit at computer and peripheral digital product thereof, be called for short IC) in, because the quick variation of semiconductor technology, cause the more diversified demand of ic power, so that use voltage modulator circuit as stepup transformer (Boost Converter), reducing transformer various various combinations such as (Buck Converter), reach the different electrical power demand of various integrated circuits, can also become provide one of factor of the utmost importance of diversified digital product.In various voltage modulator circuits, AC/DC voltage conversion circuit (AC/DC Voltage Converter) is exported owing to general commercially available AC power being converted to required galvanic current source, thereby uses as the front stage circuits of voltage modulator circuit widely.
With reference to shown in Figure 1, it is existing a kind of AC/DC voltage conversion circuit figure, show among the figure, AC/DC voltage conversion circuit 10 comprises: bridge rectifier 11, power transistor chip 12, pulse-width modulation (Pulse Width Modulation is called for short PWM) circuit 13, startup (Start Up) circuit 14, transformer circuit 15, filtering and feedback circuit 16 and working power circuit 17.Wherein, pulse-width modulation circuit 13 is used for the feedback voltage size according to the DC power supply Vo of output, produces the pulse-width signal of modulation, controls and export galvanic current source Vo thus.But, pulse-width modulation circuit 13 needs to rely on low-voltage dc power supply usually and drives, and AC/DC voltage conversion circuit 10 opens when beginning, there is no can be for the required DC power supply of pulse-width modulation circuit 13 work, thereby start-up circuit in the application drawing 14 and working power circuit 17, continuing provides its running required power supply.
When AC/DC voltage conversion circuit 10 opened the beginning, the output of bridge rectifier 11 can be exported the DC power supply with ripple, therefore, can introduce in the pulse-width modulation circuit 13 by the resistance of forming start-up circuit 14, to open the power supply of beginning running as it.Afterwards, pulse-width modulation circuit 13 is promptly begun operate as normal, and the feedback voltage size with according to the DC power supply Vo that exports produces the pulse-width signal of modulation, the galvanic current of the opening and closing time length of the power transistor of power controlling transistor chip 12, and then output thus source Vo.After AC/DC voltage conversion circuit 10 starts and exports galvanic current source Vo, connect the working power circuit 17 of transformer circuit 15, can take over the working power that provides comparatively stable, pulse-width modulation circuit 13 can more stably be worked.
Though the aforementioned practice can make AC/DC voltage conversion circuit 10 normally work, yet behind the circuit steady operation, start-up circuit 14 should be retired from political life after winning tremendous successes and still is in its reset condition, in task performance, lacks to some extent unavoidably.Therefore, as Fig. 2 and shown in Figure 3, with depletion MOS's field-effect transistor (Depletion Metal Oxide Semiconductor Field EffectTransistor, abbreviation Depletion MOSFET) 221 and 331 replace, and by pulse-width modulation circuit 23 or the 33 enabling signal st that export, disconnect the running of depletion MOS's field-effect transistor 221 and 331 respectively, to save the consumption of power.
What Fig. 2 was different with Fig. 3 is that depletion MOS's field-effect transistor 221 and 331 is integrated in respectively in the chip of power transistor chip 22 and pulse-width modulation circuit 33.But, where no matter adopt formula, use depletion MOS's field-effect transistor 221 or 331, be used as the AC/DC voltage conversion circuit of start-up circuit, the manufacture process of its chip, the capital is because depletion MOS's field-effect transistor 221 or 331 raceway grooves that increased (N raceway groove or P raceway groove) technology make that the technology of its chip is more complicated.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of power transistor chip and use the AC/DC voltage conversion circuit of this chip, it uses junction field effect transistor bond oxide semiconductor field effect transistor to be used as start-up circuit, and with junction field effect transistor and mos field effect transistor, in be built in the power transistor chip.Therefore, not only have the effect of saving power consumption, more can not increase extra mask and technology, and then can simplify technology, saving cost.
For reaching above-mentioned and other purpose, the invention provides a kind of power transistor chip of built-in starting transistor, applicable to the AC/DC voltage conversion circuit.This power transistor chip comprises: first pin, second pin, the 3rd pin, the 4th pin, the 5th pin, power transistor, mos field effect transistor and junction field effect transistor.Wherein, power transistor is used for the power switch as the AC/DC voltage conversion circuit, and it has first source/drain electrode, second source/drain electrode and power transistor grid.First source/drain electrode couples first pin, and second source/drain electrode couples second pin, and the power transistor grid couples the 3rd pin.Mos field effect transistor has the 5th source/drain electrode, the 6th source/drain electrode and mos field effect transistor grid, and the 5th source/drain electrode couples first pin, and the 6th source/drain electrode couples the 4th pin.Junction field effect transistor be used for mos field effect transistor together as the start-up circuit of AC/DC voltage conversion circuit, it has the 3rd source/drain electrode, the 4th source/drain electrode and junction field effect transistor grid, the 3rd source/drain electrode couples first pin, the 4th source/drain electrode couples the mos field effect transistor grid, and the junction field effect transistor grid couples the 5th pin.
The present invention also provides a kind of AC/DC voltage conversion circuit, the AC power of input can be converted to the output of galvanic current source.This AC/DC voltage conversion circuit also comprises except that the power transistor chip of the built-in starting transistor of application of aforementioned: bridge rectifier, pulse-width modulation circuit, transformer circuit, filtering and feedback circuit and working power circuit.
Wherein, bridge rectifier has power input and rectification output end, and power input is used to receive the AC power of input.Transformer circuit has main coil, inferior coil and secondary coil, rectification output end, the other end that one end of main coil couples bridge rectifier couples first pin of power transistor chip, just couples the 3rd source/drain electrode of the 5th source/drain electrode and junction field effect transistor of first source/drain electrode, the mos field effect transistor of power transistor.
Pulse-width modulation circuit has the power control terminal of startup, working power end, pulse-width signal output and current detecting end, start the 5th pin that power control terminal couples power transistor chip, junction field effect transistor grid just, with the keying of control junction field effect transistor, and then controlled the keying of mos field effect transistor.Working power end couples the 4th pin of power transistor chip, and the 6th of mos field effect transistor the source/drain electrode just is to receive the startup power supply of mos field effect transistor output.The pulse-width signal output couples the 3rd pin of power transistor chip, and just the power transistor grid is used for the size according to feedback voltage, exports the pulse-width signal of modulation DC power supply.The current detecting end couples second pin of power transistor chip, and second of power transistor source/drain electrode just is used to detect the electric current of power transistor of flowing through.
Working power circuit couples the secondary coil of transformer circuit and the working power end of pulse-width modulation circuit, be used for after pulse-width modulation circuit disconnects the startup power supply of mos field effect transistor output, continuing the power supply that provides pulse-width modulation circuit work required.Filtering and feedback circuit then couple the inferior coil of transformer circuit, are used for filtering and export the galvanic current source and provide pulse-width modulation circuit modulation required feedback voltage.
In sum, because a kind of power transistor chip provided by the present invention and use the AC/DC voltage conversion circuit of this chip, use junction field effect transistor and mos field effect transistor to be used as start-up circuit, thereby can be behind AC/DC voltage conversion circuit steady operation, disconnect the running of junction field effect transistor and mos field effect transistor, to save the consumption of power.In addition, because junction field effect transistor and mos field effect transistor etc. are started transistor, in be built among the power transistor chip, and junction field effect transistor and mos field effect transistor, the transistorized same process of available horsepower is made, so can not increase extra mask and technology, and then can simplify technology, saving cost.
For above and other objects of the present invention, feature and advantage can be become apparent, hereinafter special with preferred embodiment, and in conjunction with the accompanying drawings, be described in detail below:
Description of drawings
Fig. 1 shows existing a kind of AC/DC voltage conversion circuit figure;
Fig. 2 shows existing a kind of AC/DC voltage conversion circuit sketch of using depletion MOS's field-effect transistor as start-up circuit;
The another kind of execution mode of Fig. 3 displayed map 2;
Fig. 4 shows a kind of according to the preferred embodiment of the invention AC/DC voltage conversion circuit figure;
The junction field effect transistor of the power transistor chip of Fig. 5 displayed map 4 and mos field effect transistor start the conducting schematic diagram;
Schematic diagram when the junction field effect transistor of the power transistor chip of Fig. 6 displayed map 4 and mos field effect transistor disconnect.
Embodiment
With reference to shown in Figure 4, it be a kind of according to the preferred embodiment of the invention AC/DC voltage conversion circuit figure, and the AC power Vin that this AC/DC voltage conversion circuit 40 can be imported power input 411 exports after being converted to galvanic current source Vo.Among the figure, AC/DC voltage conversion circuit 40 comprises: functional blocks such as bridge rectifier 41, power transistor chip 42, pulse-width modulation circuit 43, transformer circuit 45, filtering and feedback circuit 46 and working power circuit 47.
As shown in the figure, power transistor chip 42 has first pin 421, second pin 422, the 3rd pin 423, the 4th pin 424, the 5th pin 425, power transistor 426, mos field effect transistor 429 and junction field effect transistor 427.The old friend, the startup transistor that this chip will be used as the start-up circuit of AC/DC voltage conversion circuit 40, comprise junction field effect transistor 427 and mos field effect transistor 429, be built in the integration in the power transistor chip 42, to reach the purpose of the technology of simplifying AC/DC voltage conversion circuit 40 chips that used.Among the figure, power transistor 426, mos field effect transistor 429 and junction field effect transistor 427, though be to be example with N type metal oxide semiconductor field-effect transistor and N type junction field effect transistor, and in power transistor chip 42, the resistance 428 of the grid of built-in connection power transistor 426 of while, right those skilled in the art should know, also can adopt the transistor of different types such as P-type mos field-effect transistor or P type junction field effect transistor.In addition, built-in resistance 428 also optionally is integrated in the chip of pulse-width modulation circuit 43, and need not be contained in this power transistor chip 42.
Wherein, power transistor 426 is used for the power switch as AC/DC voltage conversion circuit 40, the power transistor grid that it has second source of first source that couples power transistor chip 42 first pins 421/drain, couple power transistor chip 42 second pins 422/drain and couples power transistor chip 42 the 3rd pin 423.Mos field effect transistor 429 has the 5th source that couples power transistor chip 42 first pins 421/drain, couple the 6th source/drain electrode and mos field effect transistor grid of power transistor chip 42 the 4th pin 424.The 4th source/drain electrode S and the junction field effect transistor grid G that couples power transistor chip 42 the 5th pin 425 of the mos field effect transistor grid that junction field effect transistor 427 has the 3rd source/drain D of coupling power transistor chip 42 first pins 421, couple mos field effect transistor 429.
When AC/DC voltage conversion circuit 40 opens the beginning, bridge rectifier 41 receives the AC power Vin of input from its power input 411, after full-wave rectification, has the DC power supply of ripple from its rectification output end 412 outputs, the main coil 451 of the transformer circuit 45 that couples through an end and rectification output end 412 again, arrive first pin 421 of the power transistor chip 42 that the other end coupled, just the 3rd source of junction field effect transistor 427/drain D, the 5th source/drain electrode of mos field effect transistor 429 and first source/drain electrode of power transistor 426.
In order to provide pulse-width modulation circuit 43 to open the power supply of beginning running, the working power end 432 of pulse-width modulation circuit 43 is coupled to the 4th pin 424 of power transistor chip 42, just the 6th of mos field effect transistor 429 the source/drain electrode.At this moment, because the enabling signal st that pulse-width modulation circuit 43 is exported is an electronegative potential, the not conducting of transistor 436 of The built-in makes the startup power control terminal 431 of pulse-width modulation circuit 43 have the current potential of VCC.
In addition, because the startup power control terminal 431 of pulse-width modulation circuit 43 is coupled to the 5th pin 425 of power transistor chip 42, junction field effect transistor grid G just, therefore, junction field effect transistor 427 conductings and make its 4th source/drain electrode S have high potential, and and then drive 429 (as shown in Figure 5) of conducting mos field effect transistor, so can be with the DC power supply with ripple of bridge rectifier 41 outputs, be sent to the 6th source/drain electrode of mos field effect transistor 429, just the 4th pin 424 of power transistor chip 42.
At this moment, the working power end 432 that pulse-width modulation circuit 43 promptly couples by the 6th source/drain electrode with mos field effect transistor 429 is obtained the power supply that opens beginning running and is started working.Outside, and according to the feedback voltage size of the DC power supply Vo of AC/DC voltage conversion circuit 40 output, the pulse-width signal that produces modulation is from its pulse-width signal output 433 outputs, again through the 3rd pin 423 and the resistance 428 of the power transistor chip 42 that couples with it, be sent to the power transistor grid of power transistor chip 42, the opening and closing time length of power controlling transistor 426 thus, and in conjunction with second pin 422 that couples power transistor chip 42, be used to detect the current detecting end 434 of electric current of power transistor 426 of flowing through, adjust the pulsewidth of pulse-width signal, make AC/DC voltage conversion circuit 40 can export galvanic current source Vo.
After pulse-width modulation circuit 43 was started working, the inferior coil 452 of transformer circuit 45 promptly can induced voltage, and the filtering through coupling with it and the filtering of feedback circuit 46, and exported galvanic current source Vo.The feedback voltage of the required reference of pulse-width modulation circuit 43 modulation then gets by the light-emitting diode 461 of filtering among the figure and feedback circuit 46 and the isolation detection of photistor 435.
In addition, the secondary coil 453 of transformer circuit 45 is induced voltage simultaneously also, and via the filtering of the working power circuit 47 that couples with it, and is sent to the working power end 432 of pulse-width modulation circuit 43.At this moment, because the steady operation power supply that working power circuit 47 is provided, can supply pulse-width modulation circuit 43 more stably works required, therefore, pulse-width modulation circuit 43 draws high the enabling signal st that exports and is high potential, make transistor 436 conductings of The built-in, and then the startup power control terminal 431 of pulse-width modulation circuit 43 is pulled low to the GND earth potential, cause the 4th source/drain electrode S of junction field effect transistor 427 and the reverse blas between the junction field effect transistor grid G and press from both sides and end, and and then disconnect mos field effect transistor 429 (as shown in Figure 6).So can close the startup power supply of mos field effect transistor 429 outputs by disconnecting the running of junction field effect transistor 427 and mos field effect transistor 429.Afterwards, just the steady operation power supply that is provided by working power circuit 47 provides pulse-width modulation circuit 43 work required power supply, to save the power consumption of AC/DC voltage conversion circuit 40 constantly.
With reference to Fig. 5 and shown in Figure 6, because power transistor chip 42 according to the built-in starting transistor that present embodiment provided, the startup transistor that will comprise junction field effect transistor 427 and mos field effect transistor 429, in be built among the power transistor chip 42, and because of junction field effect transistor 427,426 of mos field effect transistor 429 and power transistors, all has similar doped structure, so can use identical technology to make, and can not increase extra mask and technology, and then can reach simplification technology, cost-effective purpose.
Though the present invention discloses as above with preferred embodiment, so it is not to be used to limit the present invention, any those skilled in the art, and various changes and the retouching done without departing from the spirit and scope of the present invention also belong to scope of the present invention.Therefore, protection scope of the present invention is as the criterion when looking the accompanying Claim scope person of defining.
Claims (9)
1. the power transistor chip of a built-in starting transistor is applicable to the AC/DC voltage conversion circuit, comprising:
First pin;
Second pin;
The 3rd pin;
The 4th pin;
The 5th pin;
Power transistor, be used for power switch as described AC/DC voltage conversion circuit, have first source/drain electrode, second source/drain electrode and power transistor grid, described first source/drain electrode couples described first pin, described second source/drain electrode couples described second pin, and described power transistor grid couples described the 3rd pin;
Mos field effect transistor has the 5th source/drain electrode, the 6th source/drain electrode and mos field effect transistor grid, and described the 5th source/drain electrode couples described first pin, and described the 6th source/drain electrode couples described the 4th pin; And
Junction field effect transistor, be used for described mos field effect transistor together as the start-up circuit of described AC/DC voltage conversion circuit, have the 3rd source/drain electrode, the 4th source/drain electrode and junction field effect transistor grid, described the 3rd source/drain electrode couples described first pin, described the 4th source/drain electrode couples described mos field effect transistor grid, and described junction field effect transistor grid couples described the 5th pin.
2. power transistor chip as claimed in claim 1 also comprises the resistance between between described power transistor grid and described the 3rd pin.
3. power transistor chip as claimed in claim 1, wherein said power transistor are N type metal oxide semiconductor field-effect transistor.
4. power transistor chip as claimed in claim 1, wherein said junction field effect transistor are N type junction field effect transistor, and described mos field effect transistor is a N type metal oxide semiconductor field-effect transistor.
5. an AC/DC voltage conversion circuit is applicable to AC power is converted to the galvanic current source, comprising:
Power transistor is used for the power switch as described AC/DC voltage conversion circuit, has first source/drain electrode, second source/drain electrode and power transistor grid;
Mos field effect transistor has the 5th source/drain electrode, the 6th source/drain electrode and mos field effect transistor grid, and described the 5th source/drain electrode couples described first source/drain electrode;
Junction field effect transistor, be used for described mos field effect transistor together as the start-up circuit of described AC/DC voltage conversion circuit, have the 3rd source/drain electrode, the 4th source/drain electrode and junction field effect transistor grid, described the 3rd source/drain electrode couples described first source/drain electrode, and described the 4th source/drain electrode couples described mos field effect transistor grid;
Bridge rectifier has power input and rectification output end, and described power input is used to receive described AC power;
Transformer circuit has main coil, inferior coil and secondary coil, and an end of described main coil couples described first source/drain electrode that described rectification output end, the other end couple described power transistor;
Pulse-width modulation circuit, has the startup power control terminal, working power end, pulse-width signal output and current detecting end, described startup power control terminal couples described junction field effect transistor grid, to control the keying of described junction field effect transistor, and then controlled the keying of described mos field effect transistor, described working power end couples described the 6th source/drain electrode of described mos field effect transistor, to receive the startup power supply of described mos field effect transistor output, described pulse-width signal output couples described power transistor grid, be used for size according to feedback voltage, export the pulse-width signal of the described DC power supply of modulation, described current detecting end couples the described second source/drain electrode of described power transistor, is used to detect the electric current of described power transistor of flowing through;
Working power circuit couples the described secondary coil of described transformer circuit and the described working power end of described pulse-width modulation circuit, is used for after described pulse-width modulation circuit disconnects described startup power supply, continues to provide described pulse-width modulation circuit work required power supply; And
Filtering and feedback circuit couple described coil of described transformer circuit, are used for filtering and export described DC power supply and provide described pulse-width modulation circuit modulation required described feedback voltage.
6. AC/DC voltage conversion circuit as claimed in claim 5 wherein also comprises the resistance between between described power transistor grid and described pulse-width signal output.
7. AC/DC voltage conversion circuit as claimed in claim 5, wherein said power transistor are N type metal oxide semiconductor field-effect transistor.
8. AC/DC voltage conversion circuit as claimed in claim 5, wherein said junction field effect transistor are N type junction field effect transistor, and described mos field effect transistor is a N type metal oxide semiconductor field-effect transistor.
9. AC/DC voltage conversion circuit as claimed in claim 5, wherein said power transistor, described mos field effect transistor, and described junction field effect transistor be integrated in the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910002712 CN101783344B (en) | 2009-01-19 | 2009-01-19 | Power transistor chip with built-in starting transistor and application circuit thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910002712 CN101783344B (en) | 2009-01-19 | 2009-01-19 | Power transistor chip with built-in starting transistor and application circuit thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101783344A true CN101783344A (en) | 2010-07-21 |
| CN101783344B CN101783344B (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 200910002712 Expired - Fee Related CN101783344B (en) | 2009-01-19 | 2009-01-19 | Power transistor chip with built-in starting transistor and application circuit thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887961A (en) * | 2014-04-18 | 2014-06-25 | 杭州士兰微电子股份有限公司 | Switching power supply and controller thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5115369A (en) * | 1990-02-05 | 1992-05-19 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
| CN101304222A (en) * | 2007-05-09 | 2008-11-12 | 群康科技(深圳)有限公司 | AC/DC switching circuit |
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2009
- 2009-01-19 CN CN 200910002712 patent/CN101783344B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887961A (en) * | 2014-04-18 | 2014-06-25 | 杭州士兰微电子股份有限公司 | Switching power supply and controller thereof |
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| CN101783344B (en) | 2012-05-30 |
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