TW201025421A - Method of manufacturing epitaxial substrate - Google Patents
Method of manufacturing epitaxial substrate Download PDFInfo
- Publication number
- TW201025421A TW201025421A TW97151451A TW97151451A TW201025421A TW 201025421 A TW201025421 A TW 201025421A TW 97151451 A TW97151451 A TW 97151451A TW 97151451 A TW97151451 A TW 97151451A TW 201025421 A TW201025421 A TW 201025421A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- substrate
- epitaxial
- sacrificial
- semiconductor
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000002086 nanomaterial Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 21
- 241000238631 Hexapoda Species 0.000 claims description 10
- 238000000407 epitaxy Methods 0.000 claims description 7
- 238000004377 microelectronic Methods 0.000 claims description 5
- 230000001939 inductive effect Effects 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 1
- 239000012528 membrane Substances 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000002071 nanotube Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000000763 evoking effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97151451A TW201025421A (en) | 2008-12-30 | 2008-12-30 | Method of manufacturing epitaxial substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97151451A TW201025421A (en) | 2008-12-30 | 2008-12-30 | Method of manufacturing epitaxial substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201025421A true TW201025421A (en) | 2010-07-01 |
| TWI375258B TWI375258B (enrdf_load_stackoverflow) | 2012-10-21 |
Family
ID=44852617
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97151451A TW201025421A (en) | 2008-12-30 | 2008-12-30 | Method of manufacturing epitaxial substrate |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW201025421A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479892A (zh) * | 2010-11-23 | 2012-05-30 | 亚威朗集团有限公司 | 制造垂直发光器件的方法及用于该发光器件的衬底组件 |
| CN102760812A (zh) * | 2011-04-26 | 2012-10-31 | 台湾积体电路制造股份有限公司 | 具有纳米图案化衬底的led的方法和结构 |
| TWI457271B (zh) * | 2011-03-29 | 2014-10-21 | Hon Hai Prec Ind Co Ltd | 半導體外延結構的製備方法 |
| TWI462153B (zh) * | 2012-05-21 | 2014-11-21 | Nat Univ Chung Hsing | Separation method of epitaxial substrate |
| US9219193B2 (en) | 2011-01-12 | 2015-12-22 | Tsinghua University | Method for making epitaxial structure |
-
2008
- 2008-12-30 TW TW97151451A patent/TW201025421A/zh unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479892A (zh) * | 2010-11-23 | 2012-05-30 | 亚威朗集团有限公司 | 制造垂直发光器件的方法及用于该发光器件的衬底组件 |
| US9219193B2 (en) | 2011-01-12 | 2015-12-22 | Tsinghua University | Method for making epitaxial structure |
| US9559255B2 (en) | 2011-01-12 | 2017-01-31 | Tsinghua University | Epitaxial structure |
| US9905726B2 (en) | 2011-01-12 | 2018-02-27 | Tsinghua University | Semiconductor epitaxial structure |
| TWI457271B (zh) * | 2011-03-29 | 2014-10-21 | Hon Hai Prec Ind Co Ltd | 半導體外延結構的製備方法 |
| CN102760812A (zh) * | 2011-04-26 | 2012-10-31 | 台湾积体电路制造股份有限公司 | 具有纳米图案化衬底的led的方法和结构 |
| TWI462153B (zh) * | 2012-05-21 | 2014-11-21 | Nat Univ Chung Hsing | Separation method of epitaxial substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI375258B (enrdf_load_stackoverflow) | 2012-10-21 |
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