201023321 六、發明說明： 【發明所屬之技術領域】 本發明係關於可撓電路板，特別是關於具有散熱用圖 案之覆晶薄膜基板（COF, Chip On Film)之容易彎曲且可 防止斷裂之散熱用圖案構造。 【先前技術】 0 可撓電路板之一型態之覆晶薄膜基板，係於聚醯亞胺 薄膜等絕緣性薄膜的表面以銅等導電材料形成電路圖案者 ，作爲絕緣性薄膜除了聚醯亞胺以外可以使用玻璃纖維環 氧樹脂、聚酯、液晶高分子等。 於絕緣性薄膜之一方面上，設有供與半導體元件之電 極接合之用的內導線及與外部基板之電極接合之用的外導 線’內導線與外導線被連結而圖案化。此處，內導線爲了 與半導體元件之細微的電極接合而被形成爲線寬很細，而 ❹外 導線要與外部基板之電極接合所以比起內導線來線寬被 形成爲很粗。 近年來伴隨著使用覆晶薄膜基板（COF )之電子機器 的多功能化或小型化，被搭載於覆晶薄膜基板的半導體元 件之驅動負荷上升，特別是在顯示裝置的領域會有半導體 元件發熱的問題。 由此’例如於日本專利公開公報第2008-283 96號所 不’爲了提高覆晶薄膜基板的散熱特性，在與被搭載半導 體兀件之面相對向的面上設有散熱用圖案以進行散熱對策 -5- 201023321 於圖1顯示從前之設置了散熱用圖案之覆晶薄膜基板 之一例。 此COF (覆晶薄膜基板）基板4，具備被連接至半導 體元件之配線圖案1、絕緣性薄膜2、與散熱用圖案3。散 熱用圖案3，被形成於對向於絕緣性薄膜2的半導體元件 搭載面之面上，使半導體元件所產生之熱透過絕緣性薄膜 2以及散熱用圖案3往外部放出。 此外，在COF基板4之折曲的區域於散熱用圖案3 設有狹縫6，防止由於折曲的荷重集中導致散熱用圖案的 剝離。 【發明內容】 [發明所欲解決之課題] 然而，如圖1所示於散熱用圖案3設前述狹縫6的場 合’會有由於折曲時狹縫端部7之應力集中使散熱用圖案 3斷裂，或是以狹縫端部附近爲基點覆晶薄膜基板容易變 成被劇烈折彎的形狀而該區域的配線圖案變得容易斷線等 不良情形。 t 本發明係有鑑於前述情形而爲之發明，目的在於提供 具備容易折曲、且可防止斷裂之散熱用圖案之配線圖案很 難斷線之覆晶薄膜基板。 [供解決課題之手段] 201023321 爲達成前述目的，本發明之覆晶薄膜基板，係具備： 絕緣性薄膜、被配置於前述絕緣性薄膜之一方之面上且與 半導體元件連接的配線圖案、及被配置於前述絕緣性薄膜 之與被配置前述配線圖案之面相對向的面上之散熱用圖案 之覆晶薄膜基板，其特徵爲：在前述覆晶薄膜基板被折曲 - 的區域之前述散熱用圖案，對折曲方向直交的方向上被形 成複數開口部。 β 此外，本發明之覆晶薄膜基板，除了前述特徵外，還 具有被形成於前述散熱用圖案之前述開口部爲長圓形之特 徵。 此外，本發明之覆晶薄膜基板，除了前述特徵以外， 還具有被形成於對折曲方向直交的方向上之複數之前述開 口部，在對折曲方向直交的方向上同形狀者被形成爲直線 狀，同時被形成爲直線狀之同形狀之前述開口部在折曲方 向上被形成複數列之特徵。 φ 此外，本發明之覆晶薄膜基板，除了前述特徵以外， 還具有被形成於對折曲方向直交的方向上之複數之前述開 口部，在對折曲方向直交的方向上被形成爲階梯狀或鋸齒 狀，相鄰接之前述開口部僅在對折曲方向直交的方向上以 至少一部份重疊的方式被形成，同時在折曲方向上被形成 複數列之特徵。 [發明之效果]201023321 VI. Description of the Invention: [Technical Field] The present invention relates to a flexible circuit board, and more particularly to a chip-on-film (COF, Chip On Film) having a heat dissipation pattern, which is easy to bend and prevents heat from being broken. Constructed with patterns. [Prior Art] 0 A flip-chip film substrate of one type of flexible circuit board is formed by forming a circuit pattern with a conductive material such as copper on the surface of an insulating film such as a polyimide film, as an insulating film. A glass fiber epoxy resin, a polyester, a liquid crystal polymer, etc. can be used other than an amine. In one aspect of the insulating film, an inner lead for bonding the electrode to the semiconductor element and an outer lead for bonding the electrode to the outer substrate are provided and patterned. Here, the inner wire is formed to have a fine line width for bonding with the fine electrode of the semiconductor element, and the outer wire is bonded to the electrode of the outer substrate, so that the line width is formed thicker than the inner wire. In recent years, with the increase in the size and size of electronic devices using a chip-on-film substrate (COF), the driving load of semiconductor devices mounted on a flip-chip substrate has increased, and in particular, semiconductor devices are heated in the field of display devices. The problem. In order to improve the heat dissipation characteristics of the flip-chip substrate, a heat dissipation pattern is provided on the surface facing the surface on which the semiconductor element is mounted, for example, in order to improve the heat dissipation characteristics of the semiconductor wafer substrate. Countermeasure-5- 201023321 An example of a flip-chip film in which a heat dissipation pattern is provided in the prior art is shown in FIG. This COF (Crystalline Film Substrate) substrate 4 includes a wiring pattern 1, an insulating film 2, and a heat dissipation pattern 3 which are connected to a semiconductor element. The heat dissipation pattern 3 is formed on the surface of the semiconductor element mounting surface facing the insulating film 2, and the heat generated by the semiconductor element is transmitted through the insulating film 2 and the heat dissipation pattern 3 to the outside. Further, a slit 6 is provided in the heat-dissipating pattern 3 in the region where the COF substrate 4 is bent, thereby preventing peeling of the heat-dissipating pattern due to the concentration of the bent load. [Problem to be Solved by the Invention] However, when the slit 6 is provided in the heat dissipation pattern 3 as shown in Fig. 1, there is a risk of concentration of the slit end portion 7 due to bending. (3) Breaking or a phenomenon in which the flip-chip film is easily bent in a shape that is sharply bent at the vicinity of the slit end portion, and the wiring pattern in the region is easily broken. The present invention has been made in view of the above circumstances, and it is an object of the invention to provide a flip-chip substrate having a wiring pattern which is easy to bend and which can prevent breakage of a heat dissipation pattern from being easily broken. [Means for Solving the Problem] 201023321 In order to achieve the above object, the flip chip substrate of the present invention includes an insulating film, a wiring pattern disposed on one surface of the insulating film and connected to the semiconductor element, and a flip-chip substrate disposed on a heat dissipation pattern on a surface of the insulating film facing the surface on which the wiring pattern is disposed, characterized in that the heat dissipation is performed in a region where the flip chip substrate is bent A plurality of openings are formed in the direction orthogonal to the bending direction by the pattern. Further, in addition to the above-described features, the flip chip substrate of the present invention has a feature that the opening formed in the heat dissipation pattern has an oblong shape. Further, in addition to the above-described features, the flip chip substrate of the present invention has a plurality of openings formed in a direction orthogonal to the bending direction, and is formed into a linear shape in the direction orthogonal to the bending direction. The opening portion formed in the same shape in a straight line shape is characterized in that a plurality of rows are formed in the bending direction. In addition to the above-described features, the flip-chip substrate of the present invention has a plurality of openings formed in a direction orthogonal to the bending direction, and is formed in a stepped or sawtooth direction in a direction orthogonal to the bending direction. In the shape, the adjacent opening portions are formed to overlap at least partially in a direction orthogonal to the bending direction, and at the same time, a plurality of columns are formed in the bending direction. [Effects of the Invention]
根據相關於本發明之覆晶薄膜基板，可提供使COF 201023321 基板之折曲特性維持良好，且可以防止散熱用圖案的斷裂 ，提供可信賴性高的COF基板。 【實施方式】 其次，針對本發明之實施型態進行說明。 本發明之COF基板，具備絕緣性薄膜、被配置於絕 緣性薄膜之一方之面上之與半導體元件連接之配線圖案、 及被配置在絕緣性薄膜之與配線圖案被配置之面相對向的 面上之散熱用圖案。接著，於COF基板被折曲的區域之 散熱用圖案，在對折曲方向直交的方向上被形成複數開口 部。 藉此，COF基板折曲時產生的應力不再集中於一部份 ，可以防止散熱用圖案的斷裂。此外，藉由使散熱用圖案 被形成於絕緣性薄膜之面全體上可以縮短傳熱路徑，提高 散熱效果。 此外，較佳者爲被形成於散熱用圖案之開口部成長圓 形。 藉此，可以緩和開口部角落的應力集中，防止開口部 端面之斷裂。 此外，較佳者爲對折曲方向直交的方向上形成的複數 開口部，在對折曲方向直交的方向上被形成爲直線狀。接 著，對折曲方向直交的方向上形成的複數開口部，在折曲 方向上被形成複數列。 藉此，可以防止被形成開口部的容易折曲區域平面地 -8 - 201023321 擴展，防止COF基板局部劇烈地被折曲。 此外，較佳者爲被形成於對折曲方向直交的方向上之 複數開口部，在對折曲方向直交的方向上被形成爲階梯狀 或鋸齒狀。接著，使被形成爲階梯狀或鋸齒狀之複數開口 部僅在對折曲方向直交的方向上，相鄰接的開口部至少有 一部份形成重疊。此外，對折曲方向直交的方向上形成的 複數開口部，在折曲方向上被形成複數列。 藉此，被形成開口部的容易折曲區域，在其區域內的 c OF基板之彎曲應力變成相同，可以防止COF基板局部 劇烈地被折曲。 實施例1 以下，參照附圖同時說明相關於本發明的COF基板 之一實施例。 圖2係顯示相關於本發明之COF基板之一實施例之 φ 圖，（a)爲剖面圖，（b)爲由散熱用圖案側所見之平面圖。 於圖2，在絕緣性薄膜2之一方之面上，被配置與半 導體元件接合之配線圖案1，在前述絕緣性薄膜2之與被 配置前述配線圖案1之面相對向的面上被配置散熱用圖案 3 ° 於COF基板4被折曲的區域之散熱用圖案3，在對折 曲方向（A-A’方向）直交的方向（B-B’方向）上，被形成複 數開口部5。複數之開口部5在對折曲方向（A-A'方向） 直交的方向（B-B’方向）上被整列形成爲直線狀，但不一定 201023321 要像圖示那樣配置爲直線狀。 又，折曲方向（A-A'方向）係於圖2(b)以接近於左右 之邊的方式，亦即以接近A與A’的方式折曲的方向。 此外，前述開口部5以形成爲長圓形較佳。長圓形之 長邊方向之朝向，可以是折曲方向（A-A’方向）也可以是 與此直交的方向（B-B’方向）之任何一方，通常以折曲方向 (A-A’方向）爲長邊方向。 實施例2 圖3係顯示相關於本發明之COF基板之其他實施例 之散熱用圖案開口部之平面圖。 於圖3,被形成於散熱用圖案3的複數開口部5，在 折曲方向（A-A’方向）上被形成複數列。 亦即，對折曲方向（A-A’方向）直交的方向（B-B’方 向）上形成的複數開口部5，在對折曲方向（Α-Α'方向） 直交的方向（Β-Β'方向）上同形狀者被形成爲直線狀。接 著，對折曲方向（Α-Α’方向）直交的方向（Β-Β’方向）上 形成的複數開口部5，在折曲方向（Α-Α’方向）上被形成 複數列。 實施例3 圖4係顯示相關於本發明之COF基板之進而其他實 施例之散熱用圖案開口部之平面圖。 於圖4，在被形成於折曲方向（Α-Α’方向）的複數列 -10- 201023321 之開口部5，相鄰列之開口部5之至少一部份，係以鄰接 於對折曲方向（A-A'方向）直交的方向（B-B’方向）上的 方式被形成。簡言之’僅在位於相鄰列的開口部5之一部 分對折曲方向（A-A’方向）直交的方向（B-B’方向）上之 開口部5的一部份，與使開口部5在對折曲方向（A-A’方 向）直交的方向（B_B'方向）上’以至少部分重複的方式 被配置。 亦即，對折曲方向（A-A’方向）直交的方向（B-B’方 向）上形成的複數開口部5，在對折曲方向（A-A'方向） 直交的方向（B-B·方向）上被形成爲階梯狀或鋸齒狀。接 著，使被形成爲階梯狀或鋸齒狀之複數開口部5僅在對折 曲方向（A-A，方向）直交的方向（B-B’方向）上，以相鄰 接的開口部5至少有一部份重叠的方式被形成。此外，對 折曲方向（A-A，方向）直交的方向（B-B’方向）上形成的 複數開口部5，在折曲方向（A-A'方向）上被形成複數列 〇 其次，準備作爲根據本發明之前述實施例3所示之設 置開口部5的COF基板，準備作爲比較例之設置圖1所 示之從前的狹縫7之COF基板，進行以下的試驗。 針對前述實施例3與從前例，以同一條件實施折曲試 驗。在折曲試驗，維持荷重200 g/3 5mm同時使半徑1 mm 之薄膜載體帶折曲90°，接著回到原來狀態，將此作爲1 個循環反覆進行10個循環。 結果，在從前例，實施1〇循環的實驗後，1〇個樣本 201023321 中有4個樣本確認了斷線。另一方面，： 樣本中沒有任何被確認斷線。 [產業上利用可能性] 可以適用於使用液晶面板模組等之 半導體裝置。 【圖式簡單說明】 圖1係顯示從前之COF基板之圖， 爲由散熱用圖案側所見之平面圖。 圖2係顯示相關於本發明之COF 圖，（a)爲剖面圖，（b)爲由散熱用圖案側 圖3係顯示相關於本發明之COF 之由散熱用圖案側所見之平面圖。 圖4係顯示相關於本發明之COF 施例之由散熱用圖案側所見之平面圖。 【主要元件符號說明】 1 :配線圖案 2 :絕緣性薄膜 3 :散熱用圖案 4 : COF基板 5 :開口部 6 :狹縫 本發明例，1 〇個 COF基板的各種 ❿ (a)爲剖面圖’（b) 基板之一實施例之 所見之平面圖。 基板之其他實施例 基板之進而其他實 ❹ 12- 201023321 7 :狹縫端部 A-A':折曲方向（以接近A與A’的方式折曲之方向） B-B':對折曲方向直交的方向According to the flip chip substrate of the present invention, it is possible to provide a COF substrate having a high reliability, which can maintain the bending characteristics of the COF 201023321 substrate and prevent breakage of the heat dissipation pattern. [Embodiment] Next, an embodiment of the present invention will be described. The COF substrate of the present invention includes an insulating film, a wiring pattern connected to the semiconductor element disposed on one surface of the insulating film, and a surface disposed on the surface of the insulating film facing the wiring pattern. The pattern for heat dissipation. Next, in the heat dissipation pattern in the region where the COF substrate is bent, a plurality of openings are formed in a direction orthogonal to the bending direction. Thereby, the stress generated when the COF substrate is bent is no longer concentrated in a part, and the breakage of the heat dissipation pattern can be prevented. Further, by forming the heat dissipation pattern on the entire surface of the insulating film, the heat transfer path can be shortened, and the heat radiation effect can be improved. Further, it is preferable that the opening formed in the heat dissipation pattern is formed in a circular shape. Thereby, stress concentration at the corners of the opening portion can be alleviated, and breakage of the end surface of the opening portion can be prevented. Further, it is preferable that the plurality of openings formed in the direction orthogonal to the bending direction are formed in a straight line in a direction orthogonal to the bending direction. Then, the plurality of openings formed in the direction orthogonal to the bending direction are formed in a plurality of rows in the bending direction. Thereby, it is possible to prevent the easily-folded region of the opening portion from being flatly expanded -8 - 201023321, and to prevent the COF substrate from being partially flexed. Further, it is preferable that the plurality of openings formed in the direction orthogonal to the bending direction are formed in a stepped or zigzag shape in a direction orthogonal to the bending direction. Then, the plurality of openings formed in a stepped or zigzag shape are overlapped at least in a direction orthogonal to the bending direction, and at least a portion of the adjacent opening portions are overlapped. Further, the plurality of openings formed in the direction orthogonal to the bending direction are formed in a plurality of rows in the bending direction. Thereby, the easily bent region in which the opening portion is formed, the bending stress of the cOF substrate in the region becomes the same, and the COF substrate can be prevented from being partially flexed. Embodiment 1 Hereinafter, an embodiment of a COF substrate according to the present invention will be described with reference to the accompanying drawings. Fig. 2 is a view showing a φ diagram of an embodiment of a COF substrate according to the present invention, (a) being a cross-sectional view, and (b) being a plan view seen from the side of the heat dissipation pattern. In FIG. 2, on one surface of the insulating film 2, the wiring pattern 1 placed in contact with the semiconductor element is disposed on the surface of the insulating film 2 facing the surface on which the wiring pattern 1 is placed. The heat dissipation pattern 3 having a pattern of 3° in the region where the COF substrate 4 is bent is formed with a plurality of openings 5 in a direction (B-B' direction) orthogonal to the bending direction (A-A' direction). The plurality of openings 5 are formed in a straight line in the direction (B-B' direction) orthogonal to the bending direction (A-A' direction), but it is not necessarily required to be arranged in a straight line as shown in the figure 201023321. Further, the bending direction (A-A' direction) is a direction close to the left and right sides in Fig. 2(b), that is, a direction in which it is bent so as to approach A and A'. Further, it is preferable that the opening portion 5 is formed in an oblong shape. The direction of the long side of the ellipse may be either the bending direction (A-A' direction) or the direction orthogonal to the direction (B-B' direction), usually in the bending direction (A-A) The 'direction' is the long side direction. [Embodiment 2] Fig. 3 is a plan view showing a heat-dissipation pattern opening portion of another embodiment of the COF substrate of the present invention. In Fig. 3, the plurality of openings 5 formed in the heat dissipation pattern 3 are formed in a plurality of rows in the bending direction (A-A' direction). That is, the plurality of openings 5 formed in the direction orthogonal to the bending direction (A-A' direction) (B-B' direction) are in the direction orthogonal to the bending direction (Α-Α' direction) (Β-Β' The same shape is formed in a straight line. Then, the plurality of openings 5 formed in the direction orthogonal to the bending direction (Α-Α' direction) (Β-Β' direction) are formed in a plurality of rows in the bending direction (Α-Α' direction). [Embodiment 3] Fig. 4 is a plan view showing an opening of a heat dissipation pattern according to still another embodiment of the COF substrate of the present invention. In FIG. 4, in the opening portion 5 of the plurality of columns-10-201023321 formed in the bending direction (Α-Α' direction), at least a portion of the opening portion 5 of the adjacent row is adjacent to the direction of the bending. The way (A-A' direction) in the direction of orthogonality (B-B' direction) is formed. In short, a portion of the opening portion 5 in the direction (B-B' direction) in which the portion of the opening portion 5 of the adjacent row is orthogonal to the bending direction (A-A' direction), and the opening portion 5 is disposed at least partially in a direction (B_B' direction) orthogonal to the bending direction (A-A' direction). In other words, the plurality of openings 5 formed in the direction orthogonal to the bending direction (A-A' direction) (B-B' direction) are orthogonal to the bending direction (A-A' direction) (BB direction). The upper portion is formed in a stepped or zigzag shape. Next, the plurality of openings 5 formed in a stepped or zigzag shape are at least partially in the direction (B-B' direction) orthogonal to the bending direction (AA, direction), and the adjacent opening portions 5 Overlapping methods are formed. Further, the plurality of openings 5 formed in the direction orthogonal to the bending direction (AA, direction) (B-B' direction) are formed in the plurality of rows in the bending direction (A-A' direction), and are prepared as a basis. In the COF substrate provided with the opening portion 5 shown in the third embodiment of the present invention, a COF substrate having the slit 7 as shown in Fig. 1 as a comparative example was prepared, and the following test was carried out. With respect to the foregoing Example 3 and the prior example, the bending test was carried out under the same conditions. In the flexural test, the film carrier tape having a radius of 1 mm was bent at 90 ° while maintaining a load of 200 g/3 5 mm, and then returned to the original state, and this was repeated for 10 cycles as one cycle. As a result, in the previous example, after performing the experiment of one cycle, four samples of one sample of 201023321 confirmed the disconnection. On the other hand, there are no confirmed disconnections in the sample. [Industrial Applicability] It can be applied to a semiconductor device using a liquid crystal panel module or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a COF substrate of the prior art, which is a plan view seen from the side of the heat dissipation pattern. Fig. 2 is a view showing a COF diagram relating to the present invention, (a) is a cross-sectional view, and (b) is a plan view showing the side of the heat-dissipating pattern with respect to the COF of the present invention. Fig. 4 is a plan view showing the side of the heat dissipation pattern relating to the COF embodiment of the present invention. [Description of main component symbols] 1 : Wiring pattern 2 : Insulating film 3 : Heat dissipation pattern 4 : COF substrate 5 : Opening portion 6 : Slit. In the example of the present invention, 1 ❿ COF substrate is various ❿ (a) is a sectional view '(b) A plan view of one of the embodiments of the substrate. Other Embodiments of Substrate Further Embodiments of Substrate 12-201023321 7: Slit end A-A': bending direction (direction of bending in a manner close to A and A') B-B': direction of bending Straight direction
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