JP4605272B2 - COF substrate - Google Patents

COF substrate Download PDF

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JP4605272B2
JP4605272B2 JP2008213921A JP2008213921A JP4605272B2 JP 4605272 B2 JP4605272 B2 JP 4605272B2 JP 2008213921 A JP2008213921 A JP 2008213921A JP 2008213921 A JP2008213921 A JP 2008213921A JP 4605272 B2 JP4605272 B2 JP 4605272B2
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cof substrate
orthogonal
insulating film
bending
bending direction
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JP2010050330A (en
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由裕 井上
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Sumitomo Metal Mining Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Condensed Matter Physics & Semiconductors (AREA)
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Description

本発明はフレキシブル配線基板に関し、特に、放熱用パターンを有するＣＯＦ基板における、曲げ易く、かつ断裂を防止し得る放熱用パターン構造に関する。   The present invention relates to a flexible wiring board, and more particularly to a heat dissipation pattern structure that is easy to bend and can prevent tearing in a COF substrate having a heat dissipation pattern.

フレキシブル配線基板の一形態であるＣＯＦ基板は、ポリイミドフィルム等の絶縁性フィルム表面に銅等の導電性材料で回路パターンが形成されたものであり、絶縁性フィルムとしては、ポリイミドフィルムの他にガラスエポキシ、ポリエステル、液晶ポリマー等も用いられている。   A COF substrate, which is one form of a flexible wiring substrate, has a circuit pattern formed of a conductive material such as copper on the surface of an insulating film such as a polyimide film. Epoxy, polyester, liquid crystal polymer, and the like are also used.

絶縁性フィルムの一方の面には、半導体素子の電極と接合するためのインナーリード及び外部基板の電極と接合するためのアウターリードが設けられており、インナーリードとアウターリードは連結されてパターニングされている。ここで、インナーリードは半導体素子の微細な電極と接合するために線幅が細く、アウターリードは外部基板の電極に接合することからインナーリードに比べて線幅は太く形成されている。   One surface of the insulating film is provided with an inner lead for bonding to the electrode of the semiconductor element and an outer lead for bonding to the electrode of the external substrate. The inner lead and the outer lead are connected and patterned. ing. Here, the inner lead has a narrow line width in order to be joined to the fine electrode of the semiconductor element, and the outer lead is joined to the electrode on the external substrate, so that the line width is larger than that of the inner lead.

近年、ＣＯＦ基板を使用する電子機器の多機能化や小型化に伴い、ＣＯＦ基板に搭載される半導体素子の駆動負荷が上昇し、特にディスプレイ装置の分野において半導体素子の発熱が問題になっている。   In recent years, with the increase in functionality and miniaturization of electronic devices using a COF substrate, the driving load of semiconductor elements mounted on the COF substrate has increased, and heat generation of semiconductor elements has become a problem particularly in the field of display devices. .

このことから、例えば特許文献１に示すように、ＣＯＦ基板の放熱特性を向上させるため、半導体素子が搭載される面に対向する面に放熱用パターンを設けたりして発熱対策を行っている。   For this reason, as shown in Patent Document 1, for example, in order to improve the heat dissipation characteristics of the COF substrate, a heat dissipation measure is taken by providing a heat dissipation pattern on the surface facing the surface on which the semiconductor element is mounted.

図４に、従来の放熱用パターンが設置されたＣＯＦ基板の一例を示す。
このＣＯＦ基板４は、半導体素子に接続される配線パターン１と、絶縁性フィルム２と、放熱用パターン３を備える。前記放熱用パターン３は、絶縁性フィルム２の半導体素子搭載面に対向する面に形成されており、半導体素子で発生した熱を、絶縁性フィルム２および放熱用パターン３を介して外部に放出するようにしている。
また、ＣＯＦ基板４の折り曲げられる領域では放熱用パターン３にスリット６を設け、折り曲げの荷重集中による放熱用パターンの剥離を防止している。
特開２００８−２８３９６ FIG. 4 shows an example of a COF substrate on which a conventional heat radiation pattern is installed.
The COF substrate 4 includes a wiring pattern 1 connected to a semiconductor element, an insulating film 2, and a heat radiation pattern 3. The heat radiation pattern 3 is formed on the surface of the insulating film 2 that faces the semiconductor element mounting surface, and releases heat generated in the semiconductor element to the outside through the insulating film 2 and the heat radiation pattern 3. I am doing so.
Further, in the region where the COF substrate 4 is bent, a slit 6 is provided in the heat radiation pattern 3 to prevent the heat radiation pattern from being peeled off due to bending load concentration.
JP2008-28396

しかしながら、図４に示すように放熱用パターン３に前記スリット６を設けた場合、折り曲げ時のスリット端部７へのストレス集中によって放熱用パターンが断裂したり、スリット端部近辺を基点にＣＯＦ基板が急激に折れた形状となり易く、その領域の配線パターンが断線し易くなるという不具合があった。   However, when the slit 6 is provided in the heat radiation pattern 3 as shown in FIG. 4, the heat radiation pattern is torn due to stress concentration on the slit end 7 during bending, or the COF substrate is based on the vicinity of the slit end. However, there is a problem that the wiring pattern in the region easily breaks.

本発明は上記の事情に鑑みてなされたものであり、その目的とするところは、折り曲げ易く、かつ断裂を防止し得る放熱用パターンを備えた、配線パターンが断線し難いＣＯＦ基板を提供することである。   The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a COF substrate that is easy to bend and that has a heat radiation pattern that can prevent tearing, and that is hard to break the wiring pattern. It is.

上記の目的を達成するために、本発明のＣＯＦ基板は、絶縁性フィルムと、前記絶縁性フィルムの一方の面上に配置された、半導体素子と接続される配線パターンと、前記絶縁性フィルムの前記配線パターンが配置された面に対向する面上に配置された放熱用パターンを備えるＣＯＦ基板において、前記ＣＯＦ基板が折り曲げられる領域の前記放熱用パターンには、複数の長円形の同形状の開口部のみが形成されており、該開口部の長径方向が折り曲げ方向に対して直交するように配置されているものである。 In order to achieve the above object, a COF substrate of the present invention includes an insulating film, a wiring pattern disposed on one surface of the insulating film, connected to a semiconductor element, and the insulating film. In a COF substrate having a heat dissipation pattern disposed on a surface opposite to the surface on which the wiring pattern is disposed, the heat dissipation pattern in a region where the COF substrate is bent includes a plurality of oblong openings having the same shape. Only the portion is formed, and the major axis direction of the opening is arranged so as to be orthogonal to the bending direction .

また、本発明のＣＯＦ基板は上記に加え、前記長円形の長径方向が折り曲げ方向に対し直交する方向に形成された複数の前記開口部は、折り曲げ方向に対し直交する方向に同形状のものが直線状に形成されているとともに、直線状に形成された同形状の前記開口部が折り曲げ方向に複数列形成されているものである。 In addition to the above, the plurality of openings formed in the direction in which the major axis direction of the ellipse is orthogonal to the bending direction are the same shape in the direction orthogonal to the bending direction. In addition to being formed in a straight line, the openings having the same shape formed in a straight line are formed in a plurality of rows in the bending direction .

また、本発明のＣＯＦ基板は、絶縁性フィルムと、前記絶縁性フィルムの一方の面上に配置された、半導体素子と接続される配線パターンと、前記絶縁性フィルムの前記配線パターンが配置された面に対向する面上に配置された放熱用パターンを備えるＣＯＦ基板において、前記ＣＯＦ基板が折り曲げられる領域の前記放熱用パターンには、折り曲げ方向に対し直交する方向に、複数の開口部が形成され、折り曲げ方向に対し直交する方向に形成された複数の前記開口部は、折り曲げ方向に対し直交する方向に階段状又はジグザグ状に形成されており、相隣接する前記開口部は折り曲げ方向に対し直交する方向にみて少なくとも一部が重なり合うように形成されているとともに、折り曲げ方向に複数列形成されているものである。 In addition, the COF substrate of the present invention includes an insulating film, a wiring pattern disposed on one surface of the insulating film, connected to a semiconductor element, and the wiring pattern of the insulating film. In a COF substrate having a heat dissipation pattern disposed on a surface facing the surface, a plurality of openings are formed in the heat dissipation pattern in a region where the COF substrate is bent in a direction orthogonal to the bending direction. The plurality of openings formed in a direction orthogonal to the bending direction are formed in a stepped shape or a zigzag shape in a direction orthogonal to the bending direction , and the adjacent openings are orthogonal to the bending direction. Are formed so that at least part of them overlap each other when viewed in the direction in which they are formed, and a plurality of rows are formed in the bending direction.

また、本発明のＣＯＦ基板は上記に加え、前記放熱用パターンに形成された前記開口部は長円形としたものである。 In addition to the above, the COF substrate of the present invention has an oval shape in the opening formed in the heat radiation pattern .

本発明に係るＣＯＦ基板によれば、ＣＯＦ基板の折り曲げ性を良好に維持しつつ、放熱用パターンの断裂を防止し、信頼性の高いＣＯＦ基板を提供することが可能となった。   According to the COF substrate according to the present invention, it is possible to provide a highly reliable COF substrate by preventing the heat radiation pattern from being broken while maintaining good folding performance of the COF substrate.

次に、本発明の実施の形態について説明する。
本発明のＣＯＦ基板は、絶縁性フィルムと、絶縁性フィルムの一方の面上に配置された、半導体素子と接続される配線パターンと、絶縁性フィルムの配線パターンが配置された面に対向する面上に配置された放熱用パターンを備えている。そして、ＣＯＦ基板が折り曲げられる領域の放熱用パターンには、折り曲げ方向に対し直交する方向に、複数の開口部が形成されている。 Next, an embodiment of the present invention will be described.
The COF substrate of the present invention has an insulating film, a wiring pattern disposed on one surface of the insulating film, connected to a semiconductor element, and a surface facing the surface on which the wiring pattern of the insulating film is disposed. A heat dissipating pattern is provided above. A plurality of openings are formed in the heat dissipation pattern in the region where the COF substrate is bent in a direction orthogonal to the bending direction.

これにより、ＣＯＦ基板折り曲げ時のストレスが一部分に集中することがなくなり、放熱用パターンの断裂を防止することが可能となる。また、放熱用パターンが全体的に形成されることで伝熱経路を短くすることができ、放熱効果を向上させることができる。   As a result, stress during bending of the COF substrate is not concentrated on a part, and the heat radiation pattern can be prevented from being broken. In addition, since the heat dissipation pattern is formed as a whole, the heat transfer path can be shortened, and the heat dissipation effect can be improved.

また、好ましくは、放熱用パターンに形成された開口部は長円形とする。   Preferably, the opening formed in the heat radiation pattern is oval.

これにより、開口部コーナー部への応力集中を緩和することができ、開口部端面における断裂を防止することができる。   Thereby, the stress concentration on the corner portion of the opening can be relaxed, and tearing at the end face of the opening can be prevented.

また、好ましくは、折り曲げ方向に対し直交する方向に形成された複数の開口部は、折り曲げ方向に対し直交する方向に直線状に形成されている。そして、折り曲げ方向に対し直交する方向に形成された複数の開口部は、折り曲げ方向に複数列形成されている。   Preferably, the plurality of openings formed in a direction orthogonal to the bending direction are linearly formed in a direction orthogonal to the bending direction. A plurality of openings formed in a direction perpendicular to the bending direction are formed in a plurality of rows in the bending direction.

これにより、開口部が形成された折り曲がり易い領域を平面的に広げることで、ＣＯＦ基板が局所的に急激に折れ曲がることを防止することができる。   Thereby, it is possible to prevent the COF substrate from being bent locally and abruptly by planarly expanding the region where the opening is formed and which is easily bent.

また、好ましくは、折り曲げ方向に対し直交する方向に形成された複数の開口部は、折り曲げ方向に対し直交する方向に階段状又はジグザグ状に形成されている。そして、階段状又はジグザグ状に形成された複数の開口部を折り曲げ方向に対し直交する方向にみて、相隣接する開口部は少なくとも一部が重なり合うように形成されている。また、折り曲げ方向に対し直交する方向に形成された複数の開口部は、折り曲げ方向に複数列形成されている。   Preferably, the plurality of openings formed in a direction orthogonal to the bending direction are formed in a stepped shape or a zigzag shape in a direction orthogonal to the bending direction. Then, when a plurality of openings formed in a stepped shape or a zigzag shape is viewed in a direction perpendicular to the bending direction, adjacent openings are formed so that at least a part thereof overlaps. The plurality of openings formed in the direction orthogonal to the bending direction are formed in a plurality of rows in the bending direction.

これにより、開口部が形成された折り曲がり易い領域は、その領域内でのＣＯＦ基板曲げ応力が一様となり、ＣＯＦ基板が局所的に急激に折れ曲がることを防止することができる。   Thereby, in the region where the opening is easily formed, the COF substrate bending stress becomes uniform in the region, and the COF substrate can be prevented from being bent sharply locally.

以下、本発明に係るＣＯＦ基板の一実施例について、図面を参照しながら説明する。
図１は、本発明に係るＣＯＦ基板の一実施例を示す図であり、（ａ）は断面図、（ｂ）は放熱用パターン側から見た平面図である。
図１において、絶縁性フィルム２の一方の面上に、半導体素子と接合される配線パターン１が配置され、前記絶縁性フィルム２の前記配線パターン１が配置された面に対向する面上に放熱用パターン３が配置されている。 Hereinafter, an embodiment of a COF substrate according to the present invention will be described with reference to the drawings.
1A and 1B are views showing an embodiment of a COF substrate according to the present invention, in which FIG. 1A is a cross-sectional view and FIG.
In FIG. 1, a wiring pattern 1 bonded to a semiconductor element is disposed on one surface of an insulating film 2, and heat is radiated on a surface of the insulating film 2 that faces the surface on which the wiring pattern 1 is disposed. The pattern 3 for use is arranged.

ＣＯＦ基板４の折り曲げられる領域の放熱用パターン３には、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に、複数の開口部５が形成されている。複数の開口部５は、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に例えば直線状に形成されているが、必ずしも図示したように直線状に配置されていなくてもよい。
なお、折り曲げ方向（Ａ−Ａ’方向）とは図１（ｂ）において、左右の辺を近づけるように、すなわちＡとＡ’を近づけるように折り曲げる方向をいう。 A plurality of openings 5 are formed in the heat dissipation pattern 3 in the region where the COF substrate 4 is bent in a direction (BB ′ direction) orthogonal to the bending direction (AA ′ direction). The plurality of openings 5 are, for example, linearly formed in a direction (BB ′ direction) orthogonal to the bending direction (AA ′ direction), but are necessarily arranged linearly as illustrated. It does not have to be.
The bending direction (AA ′ direction) in FIG. 1B refers to a direction of bending so that the left and right sides are close to each other, that is, A and A ′ are close to each other.

また、前記開口部５は長円形に形成することが望ましい。長円形の長手方向の向きは、折り曲げ方向（Ａ−Ａ’方向）でも、これに直交する方向（Ｂ−Ｂ’方向）のどちらでもよいが、通常は、折り曲げ方向（Ａ−Ａ’方向）を長手方向とする。   The opening 5 is preferably formed in an oval shape. The direction of the longitudinal direction of the oval may be either the bending direction (AA ′ direction) or the direction orthogonal to this (BB ′ direction), but is usually the bending direction (AA ′ direction). Is the longitudinal direction.

図２は、本発明に係るＣＯＦ基板の他の実施例の放熱用パターン開口部を示す平面図である。
図２において、放熱用パターン３に形成された複数の開口部５は、折り曲げ方向（Ａ−Ａ’方向）に複数列形成されている。 FIG. 2 is a plan view showing a heat radiation pattern opening of another embodiment of the COF substrate according to the present invention.
In FIG. 2, the plurality of openings 5 formed in the heat radiation pattern 3 are formed in a plurality of rows in the bending direction (AA ′ direction).

すなわち、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に形成された複数の開口部５は、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に同形状のものが直線状に形成されている。そして、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に形成された複数の開口部５は、折り曲げ方向（Ａ−Ａ’方向）に複数列形成されている。   That is, the plurality of openings 5 formed in a direction (BB ′ direction) orthogonal to the bending direction (AA ′ direction) are orthogonal to the bending direction (AA ′ direction) (B The same shape is formed linearly in the −B ′ direction). And the several opening part 5 formed in the direction (BB 'direction) orthogonal to a bending direction (AA' direction) is formed in multiple rows in the bending direction (AA 'direction). .

図３は、本発明に係るＣＯＦ基板の他の実施例の放熱用パターン開口部を示す平面図である。
図３において、折り曲げ方向（Ａ−Ａ’方向）に形成された複数列の開口部５は、隣り合う列の開口部５の少なくとも一部が、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に隣接するように形成されている。要するに、隣り合う列の開口部５の一部が折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に位置する開口部５の一部と、開口部５を折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）にみて、少なくとも部分的に重複するように配置されているのである。 FIG. 3 is a plan view showing a heat radiation pattern opening of another embodiment of the COF substrate according to the present invention.
In FIG. 3, the openings 5 in the plurality of rows formed in the folding direction (AA ′ direction) are such that at least a part of the openings 5 in adjacent rows is orthogonal to the folding direction (AA ′ direction). It forms so that it may adjoin to the direction (BB 'direction) to do. In short, a part of the opening 5 in the adjacent row is bent in the direction (BB ′ direction) perpendicular to the folding direction (AA ′ direction) and the opening 5 is bent. They are arranged so as to at least partially overlap in the direction (BB ′ direction) orthogonal to the direction (AA ′ direction).

すなわち、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に形成された複数の開口部５は、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に階段状又はジグザグ状に形成されている。そして、階段状又はジグザグ状に形成された複数の開口部５を折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）にみて、相隣接する開口部５は少なくとも一部が重なり合うように形成されている。また、折り曲げ方向（Ａ−Ａ’方向）に対し直交する方向（Ｂ−Ｂ’方向）に形成された複数の開口部５は、折り曲げ方向（Ａ−Ａ’方向）に複数列形成されている。   That is, the plurality of openings 5 formed in a direction (BB ′ direction) orthogonal to the bending direction (AA ′ direction) are orthogonal to the bending direction (AA ′ direction) (B -B 'direction) is formed stepwise or zigzag. Then, when the plurality of openings 5 formed in a stepped shape or a zigzag shape are viewed in a direction (BB ′ direction) orthogonal to the bending direction (AA ′ direction), at least one adjacent opening 5 is present. The parts are formed to overlap. A plurality of openings 5 formed in a direction (BB ′ direction) orthogonal to the bending direction (AA ′ direction) are formed in a plurality of rows in the bending direction (AA ′ direction). .

次に、本発明例として上記実施例３の図３に例示した開口部５を設けたＣＯＦ基板を用意し、比較例として図４に示した従来のスリット７を設けたＣＯＦ基板を用意し、以下の試験を行った。   Next, a COF substrate provided with the opening 5 illustrated in FIG. 3 of Example 3 as an example of the present invention was prepared, and a COF substrate provided with the conventional slit 7 shown in FIG. 4 as a comparative example was prepared. The following tests were conducted.

本発明例と比較例について、同一条件で折り曲げ試験を実施した。折り曲げ試験では、荷重２００ｇ／３５ｍｍを維持しながら半径１ｍｍでフィルムキャリアテープを９０°折り曲げ、次に元の状態に戻し、これを１サイクルとして１０サイクル繰り返した。
その結果、比較例では、１０サイクル試験実施後、１０サンプル中４サンプルの断線が確認された。一方、本発明例では、１０サンプル中に断線は確認できなかった。 About the example of the present invention and the comparative example, the bending test was carried out under the same conditions. In the bending test, the film carrier tape was bent 90 ° with a radius of 1 mm while maintaining a load of 200 g / 35 mm, then returned to the original state, and this was repeated 10 cycles.
As a result, in the comparative example, disconnection of 4 samples out of 10 samples was confirmed after the 10-cycle test. On the other hand, in the example of the present invention, disconnection was not confirmed in 10 samples.

液晶パネルモジュール等のＣＯＦ基板を用いる各種の半導体装置に適用できる。   The present invention can be applied to various semiconductor devices using a COF substrate such as a liquid crystal panel module.

本発明に係るＣＯＦ基板の一実施例を示す図であり、（ａ）は断面図、（ｂ）は放熱用パターン側から見た平面図である。It is a figure which shows one Example of the COF board | substrate which concerns on this invention, (a) is sectional drawing, (b) is the top view seen from the pattern for thermal radiation. 本発明に係るＣＯＦ基板の他例を示す放熱用パターン側から見た平面図である。It is the top view seen from the pattern for heat dissipation which shows the other example of the COF board | substrate which concerns on this invention. 本発明に係るＣＯＦ基板の他例を示す放熱用パターン側から見た平面図である。It is the top view seen from the pattern for thermal radiation which shows the other examples of the COF board | substrate which concerns on this invention. 従来のＣＯＦ基板を示す図であり、（ａ）は断面図、（ｂ）は放熱用パターン側から見た平面図である。It is a figure which shows the conventional COF board | substrate, (a) is sectional drawing, (b) is the top view seen from the pattern for thermal radiation.

符号の説明Explanation of symbols

１ 配線パターン
２ 絶縁性フィルム
３ 放熱用パターン
４ ＣＯＦ基板
５ 開口部
６ スリット
７ スリット端部
Ａ−Ａ’ 折り曲げ方向（ＡとＡ’を近づけるように折り曲げる方向）
Ｂ−Ｂ’ 折り曲げ方向に対して直交する方向 DESCRIPTION OF SYMBOLS 1 Wiring pattern 2 Insulating film 3 Heat radiation pattern 4 COF board 5 Opening part 6 Slit 7 Slit edge part AA 'Bending direction (direction bent so that A and A' may approach)
BB 'Direction perpendicular to the bending direction

Claims (4)

絶縁性フィルムと、前記絶縁性フィルムの一方の面上に配置された、半導体素子と接続される配線パターンと、前記絶縁性フィルムの前記配線パターンが配置された面に対向する面上に配置された放熱用パターンを備えるＣＯＦ基板において、前記ＣＯＦ基板が折り曲げられる領域の前記放熱用パターンには、複数の長円形の同形状の開口部のみが形成されており、該開口部の長径方向が折り曲げ方向に対して直交するように配置されていることを特徴とするＣＯＦ基板。 An insulating film, a wiring pattern disposed on one surface of the insulating film, connected to a semiconductor element, and a surface of the insulating film facing the surface on which the wiring pattern is disposed and the COF substrate provided with a heat dissipation pattern, the said heat dissipation pattern of the COF area substrate is bent, only the opening of the plurality of oval having the same shape are formed, folding the major axis direction of the opening A COF substrate characterized by being arranged so as to be orthogonal to the direction . 前記長円形の長径方向が折り曲げ方向に対し直交する方向に形成された複数の前記開口部は、折り曲げ方向に対し直交する方向に同形状のものが直線状に形成されているとともに、直線状に形成された同形状の前記開口部が折り曲げ方向に複数列形成されていることを特徴とする請求項１に記載のＣＯＦ基板。 The plurality of openings formed in the direction in which the major axis direction of the oval is orthogonal to the bending direction are linearly formed in the same shape in the direction orthogonal to the bending direction. 2. The COF substrate according to claim 1, wherein the formed openings having the same shape are formed in a plurality of rows in the bending direction . 絶縁性フィルムと、前記絶縁性フィルムの一方の面上に配置された、半導体素子と接続される配線パターンと、前記絶縁性フィルムの前記配線パターンが配置された面に対向する面上に配置された放熱用パターンを備えるＣＯＦ基板において、前記ＣＯＦ基板が折り曲げられる領域の前記放熱用パターンには、折り曲げ方向に対し直交する方向に、複数の開口部が形成され、折り曲げ方向に対し直交する方向に形成された複数の前記開口部は、折り曲げ方向に対し直交する方向に階段状又はジグザグ状に形成されており、相隣接する前記開口部は折り曲げ方向に対し直交する方向にみて少なくとも一部が重なり合うように形成されているとともに、折り曲げ方向に複数列形成されていることを特徴とするＣＯＦ基板。 An insulating film, a wiring pattern disposed on one surface of the insulating film, connected to a semiconductor element, and a surface of the insulating film facing the surface on which the wiring pattern is disposed In the COF substrate having the heat dissipation pattern, the heat dissipation pattern in the region where the COF substrate is bent has a plurality of openings formed in a direction orthogonal to the bending direction, and in a direction orthogonal to the bending direction. The plurality of formed openings are formed in a stepped shape or a zigzag shape in a direction orthogonal to the bending direction, and at least a part of the adjacent openings overlaps each other in the direction orthogonal to the bending direction. And a plurality of rows formed in the bending direction. 前記放熱用パターンに形成された前記開口部は長円形であることを特徴とする請求項３に記載のＣＯＦ基板。 Wherein the said opening formed in the heat dissipation pattern COF substrate according to claim 3, wherein an oval der Rukoto.
JP2008213921A 2008-08-22 2008-08-22 COF substrate Active JP4605272B2 (en)

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TW098122795A TWI398937B (en) 2008-08-22 2009-07-06 Flip chip substrate
KR1020090069256A KR101061278B1 (en) 2008-08-22 2009-07-29 COF Substrate

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