JP2007180233A - Wiring board and manufacturing method therefor, and semiconductor device - Google Patents

Wiring board and manufacturing method therefor, and semiconductor device Download PDF

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Publication number
JP2007180233A
JP2007180233A JP2005376377A JP2005376377A JP2007180233A JP 2007180233 A JP2007180233 A JP 2007180233A JP 2005376377 A JP2005376377 A JP 2005376377A JP 2005376377 A JP2005376377 A JP 2005376377A JP 2007180233 A JP2007180233 A JP 2007180233A
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conductor wiring
conductor
wiring
semiconductor element
wiring board
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JP2005376377A
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Japanese (ja)
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Hiroyuki Imamura
博之 今村
Yoshifumi Nakamura
嘉文 中村
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board which can manufacture a reliable semiconductor device, by restraining a disconnection of an outermost conductor wiring attributable to a stress applied to the conductor wiring, in a corner of a semiconductor element upon mounting the semiconductor element onto the wiring board. <P>SOLUTION: The wiring board comprises an insulating substrate 1; a plurality of first conductor wirings 12, aligned and provided along each side of semiconductor element mounting regions 4a on the insulating substrate; and a first projection electrode 13 which is formed astride a region on the both sides for each of the first conductor wirings, and has a sectional shape in the widthwise direction of the conductor wiring which is shaped at a middle height which is larger at the center than on the both sides. At the corner region of the semiconductor element mounting regions 4a, a second conductor wiring 14 is aligned and provided adjacent to the first conductor wiring, and the second conductor wiring 14 is thicker in a conductor wiring width than the first conductor wiring. On the second conductor wiring 14, a second projection electrode 15, which has a smaller dimension than the second conductor wiring in a widthwise direction of the conductor wiring, is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、チップ・オン・フィルム(COF)に用いられるテープキャリア基板のような配線基板、及びその配線基板と半導体素子を接合した半導体装置に関する。   The present invention relates to a wiring substrate such as a tape carrier substrate used for chip-on-film (COF), and a semiconductor device in which the wiring substrate and a semiconductor element are bonded.

フィルム基材を使用したパッケージモジュールの一種として、COF(Chip ON Film)が知られている。図3は、COFの一例の一部を示す断面図である(例えば特許文献1参照)。COFは、柔軟な絶縁性のフィルム基材1を用いて形成されたテープキャリア基板の上に半導体素子4が搭載され、封止樹脂5により保護された構造を有し、フラットパネルディスプレイの駆動用ドライバとして主に使用されている。   COF (Chip ON Film) is known as a kind of package module using a film substrate. FIG. 3 is a cross-sectional view showing a part of an example of the COF (see, for example, Patent Document 1). The COF has a structure in which a semiconductor element 4 is mounted on a tape carrier substrate formed using a flexible insulating film base material 1 and protected by a sealing resin 5, and is used for driving a flat panel display. It is mainly used as a driver.

テープキャリア基板の主たる要素としては、フィルム基材1の面上に形成された導体配線2とその導体配線上の突起電極(バンプ)3を含む。必要に応じて導体配線2の一部及び突起電極3上には金属めっき被膜6が形成され、金属めっき被膜6が形成されていない導体配線2上には絶縁樹脂であるソルダーレジスト7の層が形成される。一般的に、フィルム基材1としてはポリイミドが、導体配線2としては銅が使用される。また、突起電極3の形成方法としては、フィルム基材1上に導体配線2を形成後に金属めっきにより形成する方法が一般的である。   The main elements of the tape carrier substrate include a conductor wiring 2 formed on the surface of the film substrate 1 and a protruding electrode (bump) 3 on the conductor wiring. If necessary, a metal plating film 6 is formed on part of the conductor wiring 2 and the protruding electrode 3, and a layer of a solder resist 7, which is an insulating resin, is formed on the conductor wiring 2 on which the metal plating film 6 is not formed. It is formed. Generally, polyimide is used as the film base 1 and copper is used as the conductor wiring 2. Further, as a method of forming the protruding electrode 3, a method of forming the conductor wiring 2 on the film substrate 1 and then forming it by metal plating is common.

導体配線2は、半導体素子4上の電極パッド8と突起電極3を介して接続される。接続方法としては、テープキャリア基板上の半導体搭載部に封止樹脂を塗布した後、半導体素子4の電極パッド8とテープキャリア基板の突起電極3を対向させて、超音波および熱圧力により接続するのが一般的である。図4は半導体素子上の電極パット8とテープキャリア基板上の突起電極3を対向させた状態を示す平面図の例を示す。同図はテープキャリア基板側から見た図であるが、フィルム基材1については図示が省略されている。   The conductor wiring 2 is connected to the electrode pad 8 on the semiconductor element 4 via the protruding electrode 3. As a connection method, after applying a sealing resin to the semiconductor mounting portion on the tape carrier substrate, the electrode pad 8 of the semiconductor element 4 and the protruding electrode 3 of the tape carrier substrate are opposed to each other and connected by ultrasonic waves and thermal pressure. It is common. FIG. 4 shows an example of a plan view showing a state in which the electrode pad 8 on the semiconductor element and the protruding electrode 3 on the tape carrier substrate are opposed to each other. The figure is a view from the tape carrier substrate side, but the illustration of the film base 1 is omitted.

以下、従来のテープキャリア基板の製造方法について、図5を用いて説明する。図5は従来のテープキャリア基板の製造工程を示す図であり、図5(a1)〜(d1)はテープキャリア基板の半導体搭載部の平面図、図5(a2)〜(d2)は各々図5(a1)〜(d1)に対応し、図5(a1)に示すC−C’位置での断面を拡大して表している。   Hereinafter, a conventional method for manufacturing a tape carrier substrate will be described with reference to FIG. FIG. 5 is a diagram showing a conventional tape carrier substrate manufacturing process. FIGS. 5 (a1) to (d1) are plan views of a semiconductor mounting portion of the tape carrier substrate, and FIGS. 5 (a2) to (d2) are diagrams. Corresponding to 5 (a1) to (d1), the cross section at the CC ′ position shown in FIG.

図5(a1)、(a2)に示すように、複数本の導体配線2が整列して設けられたフィルム基材1を用い、図5(b1)、(b2)に示すように、フィルム基材1の導体配線2が設けられた面に、各導体配線2を横切って各導体配線2の両側の領域に広がる開口部10を有するフォトレジスト9を形成する。これにより開口部10中に各導体配線2の一部が露出する。   As shown in FIGS. 5 (a1) and (a2), a film substrate 1 having a plurality of conductor wirings 2 arranged in an aligned manner is used. As shown in FIGS. 5 (b1) and 5 (b2), a film substrate is used. On the surface of the material 1 on which the conductor wiring 2 is provided, a photoresist 9 having openings 10 extending across the respective conductor wirings 2 and extending to regions on both sides of each conductor wiring 2 is formed. Thereby, a part of each conductor wiring 2 is exposed in the opening 10.

次に、フォトレジスト9の開口部10を通して、その開口部10中に露出した導体配線2に金属めっきを施して、図5(c1)、(c2)に示すように突起電極3を形成する。フォトレジスト9を除去すれば、図5(d1)、(d2)に示すように、導体配線2上に突起電極3が形成されたテープキャリア基板が得られる。   Next, through the opening 10 of the photoresist 9, the conductor wiring 2 exposed in the opening 10 is subjected to metal plating to form the protruding electrode 3 as shown in FIGS. 5 (c1) and 5 (c2). If the photoresist 9 is removed, a tape carrier substrate in which the protruding electrode 3 is formed on the conductor wiring 2 is obtained as shown in FIGS.

図5に示すように、フィルム基材1の上には、複数本の導体配線2が整列して設けられ、各導体配線2上に突起電極3が形成されている。また、突起電極3は、導体配線2を跨って導体配線2の両側の領域に形成されている。   As shown in FIG. 5, a plurality of conductor wirings 2 are arranged on the film substrate 1, and protruding electrodes 3 are formed on the respective conductor wirings 2. The protruding electrodes 3 are formed in regions on both sides of the conductor wiring 2 across the conductor wiring 2.

また、図5(d2)に示すように、突起電極3は、その導体配線2の幅方向に沿った断面形状は、中央部が両側よりも高くなった中高形状となっている。
特開2004−327936号公報
Further, as shown in FIG. 5 (d2), the protruding electrode 3 has a medium-high shape in which the cross-sectional shape along the width direction of the conductor wiring 2 is higher in the central portion than both sides.
JP 2004-327936 A

ここで、前述したようにテープキャリア基板上に半導体素子を搭載する時には超音波及び熱圧力を印加するが、その際、半導体素子4のコーナー部は特に超音波と圧力による応力が集中する。そのため、特に最外の導体配線2が断線し易い。図6に示しように、半導体素子4のコーナー部の導体配線2が断線して、断線部11が形成される。特に、今後の狭リードピッチ化により導体配線2幅が狭くなると、さらに断線が発生し易くなり問題となる。   Here, as described above, when a semiconductor element is mounted on the tape carrier substrate, an ultrasonic wave and a thermal pressure are applied. At this time, particularly, the stress due to the ultrasonic wave and the pressure is concentrated on the corner portion of the semiconductor element 4. Therefore, the outermost conductor wiring 2 is particularly easily disconnected. As shown in FIG. 6, the conductor wiring 2 at the corner of the semiconductor element 4 is disconnected to form a disconnected portion 11. In particular, if the width of the conductor wiring 2 is narrowed due to a narrow lead pitch in the future, disconnection is more likely to occur, which becomes a problem.

本発明は、配線基板への半導体素子の実装時に印加される応力に起因する、半導体素子のコーナーの最外部の導体配線の断線を抑制し、信頼性のある半導体装置を製造可能な配線基板を提供することを目的とする。   The present invention provides a wiring board capable of manufacturing a reliable semiconductor device by suppressing disconnection of the outermost conductor wiring at the corner of the semiconductor element due to stress applied when the semiconductor element is mounted on the wiring board. The purpose is to provide.

本発明の配線基板は、絶縁基材と、前記絶縁基材上の半導体素子搭載領域の各辺に沿って整列して設けられた複数の第1の導体配線と、前記第1の導体配線の各々に対してその両側の領域に跨り形成され、且つ前記導体配線の幅方向における断面形状が中央部が両側よりも高くなった中高の形状である第1の突起電極とを備える。前記半導体素子搭載領域のコーナー領域部に、前記第1の導体配線に隣接し整列して第2の導体配線が設けられ、前記第2の導体配線は前記第1の導体配線よりも導体配線幅が太く、前記第2の導体配線上には、導体配線幅方向に前記第2の導体配線よりも小さい寸法を有する第2の突起電極が形成されたことを特徴とする。   The wiring board of the present invention includes an insulating base, a plurality of first conductor wirings arranged in alignment along each side of the semiconductor element mounting region on the insulating base, and the first conductor wirings. And a first protruding electrode having a middle-high shape in which the cross-sectional shape in the width direction of the conductor wiring is higher than the both sides. A second conductor wiring is provided adjacent to and aligned with the first conductor wiring at a corner region portion of the semiconductor element mounting region, and the second conductor wiring is wider than the first conductor wiring. And a second protruding electrode having a size smaller than that of the second conductor wiring is formed in the conductor wiring width direction on the second conductor wiring.

本発明の配線基板の製造方法は、絶縁基材と、前記絶縁基材上に沿って整列して設けられた複数の導体配線と、前記導体配線の各々に対して形成された突起電極とを備えた配線基板を製造する方法である。前記絶縁基材上の半導体素子搭載領域の各辺に沿って整列して複数の第1の導体配線が設けられ、前記半導体素子搭載領域のコーナー領域部に、前記第1の導体配線に隣接し整列して、前記第1の導体配線よりも導体配線幅が太い第2の導体配線が設けられた前記絶縁基材を用いる。前記絶縁基材における前記第1の導体配線及び第2の導体配線が設けられた面にフォトレジストを形成し、前記フォトレジストに、前記整列している第1の導体配線を横切って導体配線の両側の領域を含む形状を有する長孔状パターンを有する第1の開口部と、前記第2の導体配線よりも導体配線幅方向における寸法が小さい第2の開口部とを設けて、前記第1の開口部及び前記第2の開口部に前記第1の導体配線及び前記第2の導体配線の一部を各々露出させ、次に、前記フォトレジストの第1の開口部及び第2の開口部を通して、露出した前記第1の導体配線及び前記第2の導体配線の一部に金属めっきを施して前記突起電極を形成する。   The method for manufacturing a wiring board according to the present invention includes an insulating base, a plurality of conductor wirings arranged in alignment along the insulating base, and protruding electrodes formed for each of the conductor wirings. A method for manufacturing a wiring board provided. A plurality of first conductor wirings are provided in alignment along each side of the semiconductor element mounting region on the insulating substrate, and adjacent to the first conductor wiring in a corner region portion of the semiconductor element mounting region. The insulating base material provided with the second conductor wiring that is aligned and has a conductor wiring width wider than the first conductor wiring is used. A photoresist is formed on a surface of the insulating base material on which the first conductor wiring and the second conductor wiring are provided, and the conductor wiring is formed on the photoresist across the aligned first conductor wiring. A first opening having a long hole pattern having a shape including regions on both sides, and a second opening having a smaller dimension in the conductor wiring width direction than the second conductor wiring are provided. A part of the first conductor wiring and the second conductor wiring are respectively exposed in the opening and the second opening, and then the first opening and the second opening of the photoresist. Then, the protruding electrode is formed by performing metal plating on a part of the exposed first conductor wiring and second conductor wiring.

本発明によれば、コーナー領域部に配置された第2の導体配線の幅が太いので、配線基板への半導体素子の実装時における最外部の導体配線の断線が抑制され、信頼性の高い半導体装置を提供できる。   According to the present invention, since the width of the second conductor wiring arranged in the corner region is thick, disconnection of the outermost conductor wiring during the mounting of the semiconductor element on the wiring board is suppressed, and a highly reliable semiconductor Equipment can be provided.

上記本発明の配線基板の構成において、前記第2の突起電極の高さは前記第1の突起電極の高さと同一であることが好ましい。   In the configuration of the wiring board of the present invention, it is preferable that the height of the second protruding electrode is the same as the height of the first protruding electrode.

本発明の半導体装置は、上記構成の配線基板と、前記配線基板に実装された半導体素子とを備え、前記突起電極を介して、前記半導体素子の電極パッドと前記導体配線とが接続されたことを特徴とする。   A semiconductor device of the present invention includes a wiring board having the above-described configuration and a semiconductor element mounted on the wiring board, and the electrode pad of the semiconductor element and the conductor wiring are connected via the protruding electrode. It is characterized by.

以下、本発明の実施の形態における配線基板の構造について、図面を参照しながら説明する。図1(a)、(b)は、本実施の形態における配線基板の半導体素子搭載部の構成を示し、図1(a)は平面図、図1(b)は(a)のA−A’線に沿った断面図である。   Hereinafter, the structure of the wiring board according to the embodiment of the present invention will be described with reference to the drawings. 1A and 1B show a configuration of a semiconductor element mounting portion of a wiring board in the present embodiment, FIG. 1A is a plan view, and FIG. 1B is an AA of FIG. It is sectional drawing along a line.

本実施の形態におけるテープキャリア基板の基本的な構成は、図3に示した従来例と同様であり、柔軟な絶縁性のフィルム基材1を用いて構成され、フィルム基材1の面上に形成された第1の導体配線12とその導体配線上の第1の突起電極13を含む。第1の導体配線12は、半導体素子搭載領域4aの各辺に沿うように複数整列されている。第1の突起電極13は、第1の導体配線12の両側の領域に跨り、且つ導体配線の幅方向における断面形状は、中央部が両側よりも高くなった中高の形状である。   The basic configuration of the tape carrier substrate in the present embodiment is the same as that of the conventional example shown in FIG. 3, is configured using a flexible insulating film substrate 1, and is formed on the surface of the film substrate 1. The first conductor wiring 12 formed and the first protruding electrode 13 on the conductor wiring are included. A plurality of first conductor wirings 12 are aligned along each side of the semiconductor element mounting region 4a. The first protruding electrode 13 spans the regions on both sides of the first conductor wiring 12, and the cross-sectional shape in the width direction of the conductor wiring is a medium-high shape with the center portion being higher than both sides.

本実施の形態においては、半導体素子4のコーナー領域部に、第1の導体配線12に隣接して第2の導体配線14が配置される。第2の導体配線14は、第1の導体配線12よりも導体配線幅が太く形成され、導体配線幅方向における寸法が第2の導体配線14よりも小さい第2の突起電極15を有する。   In the present embodiment, the second conductor wiring 14 is disposed adjacent to the first conductor wiring 12 in the corner region portion of the semiconductor element 4. The second conductor wiring 14 has a second protruding electrode 15 having a conductor wiring width wider than the first conductor wiring 12 and having a dimension in the conductor wiring width direction smaller than that of the second conductor wiring 14.

以上のような構成の場合には、半導体素子搭載領域4aのコーナー部の第2の導体配線14の幅が太いため、断線し難い。また、第2の突起電極15は、第1の導体配線12上の第1の突起電極13と同程度の高さに形成されるように寸法を設計すればよいため、半導体素子4搭載時に安定した接続信頼性を得ることができる。   In the case of the configuration as described above, the second conductor wiring 14 at the corner of the semiconductor element mounting region 4a has a large width and thus is difficult to be disconnected. Further, since the second protruding electrode 15 may be designed to have a size that is approximately the same height as the first protruding electrode 13 on the first conductor wiring 12, it is stable when the semiconductor element 4 is mounted. Connection reliability can be obtained.

なお図示しないが、半導体素子搭載領域4aのコーナー領域部の半導体素子上電極パッドと導体配線上突起電極の接合力を確保するために、第2の突起電極15を第2の導体配線14上に複数個設けても良い。   Although not shown, the second projecting electrode 15 is placed on the second conductor wiring 14 in order to secure the bonding force between the semiconductor element upper electrode pad and the conductor wiring projecting electrode in the corner region of the semiconductor element mounting region 4a. A plurality may be provided.

以下、上記配線基板の製造方法について説明する。図2は配線基板の製造方法を示し、図2(a1)〜(d1)は配線基板の半導体搭載部の平面図、図2(a2)〜(d2)は各々図2(a1)〜(d1)に対応し、図2(a1)に示すB−B’位置の断面を示す。   Hereinafter, a method for manufacturing the wiring board will be described. FIG. 2 shows a method of manufacturing a wiring board, FIGS. 2A1 to 2D1 are plan views of a semiconductor mounting portion of the wiring board, and FIGS. 2A2 to 2D2 are FIGS. 2A1 to 2D1, respectively. ) And shows a cross-section at the position BB ′ shown in FIG.

図2(a1)、(a2)に示すように、絶縁基材として、第1の導体配線12が半導体素子搭載領域(図示せず)に整列して設けられ、第1の導体配線12よりも配線幅が太い第2の導体配線14が第1の導体配線12に隣接して半導体素子搭載領域のコーナー領域部に設けられたフィルム基材1を用意する。   As shown in FIGS. 2A1 and 2A2, the first conductor wiring 12 is provided as an insulating base material in alignment with a semiconductor element mounting region (not shown). A film substrate 1 is prepared in which a second conductor wiring 14 having a large wiring width is provided adjacent to the first conductor wiring 12 in a corner area portion of the semiconductor element mounting area.

次に図2(b1)、(b2)に示すように、フィルム基材1における第1の導体配線12及び第2の導体配線14が設けられた面にフォトレジスト16を付設し、整列している第1の導体配線12を横切って導体配線の両側の領域を含む形状を有する長孔状パターンである第1の開口部17と、第2の導体配線14よりも導体配線幅方向に小さい第2の開口部18とを形成する。それにより、第1の開口部17及び前記第2の開口部18に、第1の導体配線12及び第2の導体配線14の一部をそれぞれ露出させる。   Next, as shown in FIGS. 2 (b1) and 2 (b2), a photoresist 16 is attached to the surface of the film substrate 1 on which the first conductor wiring 12 and the second conductor wiring 14 are provided, and aligned. The first opening 17 which is a long hole pattern having a shape including regions on both sides of the conductor wiring across the first conductor wiring 12 and the second conductor wiring 14 is smaller in the conductor wiring width direction. 2 openings 18 are formed. Thereby, a part of the first conductor wiring 12 and the second conductor wiring 14 are exposed in the first opening 17 and the second opening 18, respectively.

次に図2(c1)、(c2)に示すように、フォトレジスト16の第1の開口部17及び第2の開口部18を通して、露出した第1の導体配線12及び第2の導体配線14の一部に金属めっきを施して、第1の突起電極13及び第2の突起電極14を形成する。   Next, as shown in FIGS. 2C1 and 2C2, the exposed first conductor wiring 12 and second conductor wiring 14 are exposed through the first opening 17 and the second opening 18 of the photoresist 16. The first protruding electrode 13 and the second protruding electrode 14 are formed by performing metal plating on a part of the first protruding electrode 13.

次にフォトレジスト16を除去すれば、図2(d1)、(d2)に示すように、導体配線上に突起電極が形成された配線基板を形成できる。   Next, if the photoresist 16 is removed, as shown in FIGS. 2 (d1) and 2 (d2), a wiring board in which protruding electrodes are formed on the conductor wiring can be formed.

上記製造方法によれば、半導体素子4のコーナー部の第2の導体配線14幅が太いため、断線し難い。また、第2の突起電極15が、第1の導体配線12上の第1の突起電極13と同程度の高さに形成されるようにフォトレジスト16の第2の開口部18の寸法を設計すればよいため、半導体素子4搭載時に安定した接続信頼性を得ることができる。   According to the above manufacturing method, since the width of the second conductor wiring 14 at the corner portion of the semiconductor element 4 is large, it is difficult to disconnect. Further, the dimension of the second opening 18 of the photoresist 16 is designed so that the second protruding electrode 15 is formed at the same height as the first protruding electrode 13 on the first conductor wiring 12. Therefore, stable connection reliability can be obtained when the semiconductor element 4 is mounted.

上述の構成の配線基板における半導体素子搭載領域に半導体素子を搭載し、半導体素子の電極パッドと導体配線とを突起電極を介して接続することにより、信頼性の高い半導体装置を構成することができる。   A semiconductor device having a high reliability can be configured by mounting a semiconductor element in the semiconductor element mounting region of the wiring substrate having the above-described configuration and connecting the electrode pad of the semiconductor element and the conductor wiring through the protruding electrode. .

本発明によれば、配線基板と半導体素子との接合時に、最外部の導体配線の断線を防ぎ、安定した接合が実現でき、例えばCOF等の薄型を目指す画像表示装置の分野において有用である、   According to the present invention, when the wiring board and the semiconductor element are bonded, the outermost conductor wiring can be prevented from being disconnected, and stable bonding can be realized.

本発明の実施の形態1における配線基板を示し、(a)は配線基板の一部を示す平面図、(b)は配線基板の一部を示す断面図The wiring board in Embodiment 1 of this invention is shown, (a) is a top view which shows a part of wiring board, (b) is sectional drawing which shows a part of wiring board 同配線基板の製造工程を示し、(a)は配線基板の一部を示す平面図、(b)は配線基板の一部を示す断面図The manufacturing process of the wiring board is shown, (a) is a plan view showing a part of the wiring board, and (b) is a sectional view showing a part of the wiring board. 従来の半導体装置の一部を示す断面図Sectional drawing which shows a part of conventional semiconductor device 従来の半導体装置を示す平面図Plan view showing a conventional semiconductor device 従来の配線基板の製造工程を示し、(a)は配線基板の一部を示す平面図、(b)は配線基板の一部を示す断面図The conventional manufacturing process of a wiring board is shown, (a) is a plan view showing a part of the wiring board, and (b) is a cross-sectional view showing a part of the wiring board. 従来例における断線例を示す半導体装置の平面図Plan view of semiconductor device showing disconnection example in conventional example

符号の説明Explanation of symbols

1 フィルム基材
2 導体配線
3 突起電極
4 半導体素子
4a 半導体素子搭載領域
5 封止樹脂
6 金属めっき被膜
7 ソルダーレジスト
8 電極パッド
9 フォトレジスト
10 フォトレジストの開口部
11 断線部
12 第1の導体配線
13 第1の突起電極
14 第2の導体配線
15 第2の突起電極
16 フォトレジスト
17 第1の開口部
18 第2の開口部
DESCRIPTION OF SYMBOLS 1 Film base material 2 Conductor wiring 3 Protruding electrode 4 Semiconductor element 4a Semiconductor element mounting area | region 5 Sealing resin 6 Metal plating film 7 Solder resist 8 Electrode pad 9 Photoresist 10 Photoresist opening part 11 Disconnection part 12 1st conductor wiring 13 First Projection Electrode 14 Second Conductor Wiring 15 Second Projection Electrode 16 Photoresist 17 First Opening 18 Second Opening

Claims (4)

絶縁基材と、前記絶縁基材上の半導体素子搭載領域の各辺に沿って整列して設けられた複数の第1の導体配線と、前記第1の導体配線の各々に対してその両側の領域に跨り形成され、且つ前記導体配線の幅方向における断面形状が中央部が両側よりも高くなった中高の形状である第1の突起電極とを備えた配線基板において、
前記半導体素子搭載領域のコーナー領域部に、前記第1の導体配線に隣接し整列して第2の導体配線が設けられ、
前記第2の導体配線は前記第1の導体配線よりも導体配線幅が太く、
前記第2の導体配線上には、導体配線幅方向に前記第2の導体配線よりも小さい寸法を有する第2の突起電極が形成されたことを特徴とする配線基板。
Insulating base material, a plurality of first conductor wirings arranged in alignment along each side of the semiconductor element mounting region on the insulating base material, and both sides of each of the first conductor wirings In a wiring board provided with a first projecting electrode that is formed across a region and has a middle-high shape in which a cross-sectional shape in the width direction of the conductor wiring is higher in the center than on both sides,
In the corner area portion of the semiconductor element mounting region, a second conductor wiring is provided adjacent to and aligned with the first conductor wiring;
The second conductor wiring has a conductor wiring width wider than the first conductor wiring,
A wiring board, wherein a second protruding electrode having a size smaller than that of the second conductor wiring is formed on the second conductor wiring in a width direction of the conductor wiring.
前記第2の突起電極の高さは前記第1の突起電極の高さと同一である請求項1に記載の配線基板。   The wiring board according to claim 1, wherein a height of the second protruding electrode is the same as a height of the first protruding electrode. 絶縁基材と、前記絶縁基材上に沿って整列して設けられた複数の導体配線と、前記導体配線の各々に対して形成された突起電極とを備えた配線基板の製造方法において、
前記絶縁基材上の半導体素子搭載領域の各辺に沿って整列して複数の第1の導体配線が設けられ、前記半導体素子搭載領域のコーナー領域部に、前記第1の導体配線に隣接し整列して、前記第1の導体配線よりも導体配線幅が太い第2の導体配線が設けられた前記絶縁基材を用い、
前記絶縁基材における前記第1の導体配線及び第2の導体配線が設けられた面にフォトレジストを形成し、前記フォトレジストに、前記整列している第1の導体配線を横切って導体配線の両側の領域を含む形状を有する長孔状パターンを有する第1の開口部と、前記第2の導体配線よりも導体配線幅方向における寸法が小さい第2の開口部とを設けて、前記第1の開口部及び前記第2の開口部に前記第1の導体配線及び前記第2の導体配線の一部を各々露出させ、
前記フォトレジストの第1の開口部及び第2の開口部を通して、露出した前記第1の導体配線及び前記第2の導体配線の一部に金属めっきを施して前記突起電極を形成することを特徴とする配線基板の製造方法。
In a manufacturing method of a wiring board comprising an insulating base, a plurality of conductor wirings arranged in alignment along the insulating base, and protruding electrodes formed for each of the conductor wirings,
A plurality of first conductor wirings are provided in alignment along each side of the semiconductor element mounting region on the insulating base, and adjacent to the first conductor wiring in a corner region portion of the semiconductor element mounting region. Using the insulating substrate provided with the second conductor wiring that is aligned and has a conductor wiring width wider than the first conductor wiring,
A photoresist is formed on a surface of the insulating base material on which the first conductor wiring and the second conductor wiring are provided, and the conductor wiring is formed on the photoresist across the aligned first conductor wiring. A first opening having a long hole pattern having a shape including regions on both sides, and a second opening having a smaller dimension in the conductor wiring width direction than the second conductor wiring are provided. Exposing the first conductor wiring and a part of the second conductor wiring to the opening and the second opening, respectively,
The protruding electrode is formed by performing metal plating on a part of the exposed first conductor wiring and second conductor wiring through the first opening and the second opening of the photoresist. A method for manufacturing a wiring board.
請求項1または2に記載の配線基板と、前記配線基板に実装された半導体素子とを備え、前記突起電極を介して、前記半導体素子の電極パッドと前記導体配線とが接続されたことを特徴とする半導体装置。   A wiring board according to claim 1 or 2 and a semiconductor element mounted on the wiring board, wherein the electrode pad of the semiconductor element and the conductor wiring are connected via the protruding electrode. A semiconductor device.
JP2005376377A 2005-12-27 2005-12-27 Wiring board and manufacturing method therefor, and semiconductor device Withdrawn JP2007180233A (en)

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