TW201016652A - Flux, conductive paste, bonded component, and method for producing bonded component - Google Patents

Flux, conductive paste, bonded component, and method for producing bonded component Download PDF

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Publication number
TW201016652A
TW201016652A TW98133961A TW98133961A TW201016652A TW 201016652 A TW201016652 A TW 201016652A TW 98133961 A TW98133961 A TW 98133961A TW 98133961 A TW98133961 A TW 98133961A TW 201016652 A TW201016652 A TW 201016652A
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Taiwan
Prior art keywords
flux
conductive paste
compound
aromatic
substrate
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TW98133961A
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Chinese (zh)
Inventor
Kazuo Kawaguchi
Hidetoshi Miyamoto
Tsuyoshi Watanabe
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Jsr Corp
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Publication of TW201016652A publication Critical patent/TW201016652A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

Disclosed is a flux which is capable of bonding a substrate and an electronic component or the like and does not leave residues after bonding (such as soldering). Also disclosed are a conductive paste containing the flux, a bonded component formed by bonding constituent members using the conductive paste and having high bonding reliability, and a method for producing the bonded component. The flux contains an aromatic compound which has two phenolic hydroxy groups in two positions of each aromatic ring, said two positions being next to each other or having one position therebetween. The aromatic compound has a melting point not less than 23 DEG C at 1 atm.

Description

201016652 六、發明說明 【發明所屬之技術領域】 本發明係關於電子零件等之焊接接合等所利用之助熔 劑,及含有該等之導電性糊漿,使用彼等之接合零件及接 合零件之製造方法。 ' 【先前技術】 ® 過去,對於零件搭載基板之電子零件之焊接接合,係 使用助熔劑。此助熔劑,以去除基板上之氧化膜爲目的等 ,而含有松香等有機酸或鹵素化合物等。使用含有此等助 熔劑之糊漿進行焊接接合後,若殘留有助熔劑殘渣,則由 於助熔劑殘渣所具有之腐蝕作用,而有經焊接接合之基板 慢慢被腐蝕等之問題。因此,焊接接合結束後,經焊接接 合之基板,爲去除助熔劑殘渣,而有必要進行洗淨。該洗 淨一般使用氟碳氫溶劑。不過最近,由環境污染之觀點觀 ® 之’已進展至脫氟碳氫化,而使用以水進行洗淨之水系洗 淨,或使用於焊接接合後不需要洗淨之固形分少的低殘渣 " 無洗淨助熔劑。 - 然而,水系洗淨時,由於洗淨中使用水,而有洗淨中 使用的水受重金屬污染之問題。又,日後對於具有更微細 化連接間距構造之半導體元件,由於以水系洗淨有洗淨性 差之問題,故大多使用無洗淨必要之低殘渣無洗淨助熔劑 0 又,於有必要經複數個回焊步驟之電子電路裝置之製 -5- 201016652 造中使用之助熔劑中’於複數次回焊後,亦有必要不使焊 接之接合強度降低且維持其接合強度。 作爲低殘渣之助熔劑,於專利文獻1中,揭示一種使 用於焊接接合前實質上幾乎完全不蒸發而於焊接接合時經 熱分解而顯示使焊接面之氧化皮膜還原去除之活性之熔劑 的焊接接合用助熔劑。該溶劑係於焊接接合後緩慢揮發之 — 溶劑,藉由使用此溶劑而成爲低殘渣助熔劑。 - [先前技術文獻] @ [專利文獻] [專利文獻1]特開平8-112692號公報 【發明內容】 [發明欲解決之課題] 焊接糊漿中之糊漿材料構成通常係由焊接粉、溶劑、 固形分(松香、活性劑等)構成。專利文獻中記載之以往 無洗淨型助熔劑雖想出使固形分減少而未含有鹵素化合物 Ο 等而成,但於焊接接合後,有必定產生松香等之樹脂成份 或活性劑成份等殘渣之顧慮。 — 又,有必要複數個回焊步驟之製造電子電路裝置時, t 所使用之焊接糊漿若爲不使焊料熔融且亦具有接著性之焊 料糊漿,則可減低回焊步驟之次數,而不會賦予過度之熱 應力,即可進行焊接在一起。據此,要求有開發既使不使 焊料熔融亦具有接著力之焊料糊漿。 本發明係爲解決上述課題而完成者,具體而言,本發 -6- 201016652 明之目的係提供一種具有接著性,且接合(焊接在一起) 後不會發生殘渣之助熔劑,以及含有該助熔劑之導電性糊 漿,藉由使用彼等接合構成構件所形成之接合(焊接在一 起)信賴性高之接合零件,以及接合零件之製造方法。 本發明係如下所述: 1. 一種助熔劑,其爲含有在芳香族環之相鄰位置編 號之2個位置上具有兩個酚性羥基,或在芳香族環之跳開 ® 一個位置編號的2個位置上具有兩個酚性羥基之芳香族化 合物之助熔劑,其特徵爲 上述芳香族化合物之一大氣壓下之熔點爲23 °C以上。 2. 如上述1所述之助熔劑,其中上述芳香族化合物 之氣化溫度在一大氣壓下爲100 °C以上。 3. 如上述1或2所述之助熔劑,其中上述芳香族環 之鄰接位置編號之2個位置上具有兩個酚性羥基之芳香族 化合物爲以下述通式(1)表示之化合物,且 ® 在上述芳香族環之跳開一個位置編號之2個位置上具 有兩個酚性羥基之芳香族化合物爲以下述通式(2)表示 ' 之化合物:[Technical Field] The present invention relates to a flux used for solder joints and the like of electronic parts and the like, and a conductive paste containing the same, and the use of the joint parts and the joint parts thereof method. ' [Prior Art] ® In the past, flux was used for solder joints of electronic components mounted on a part. This flux contains an organic acid such as rosin or a halogen compound for the purpose of removing an oxide film on a substrate. When the flux residue is adhered by using a paste containing such a flux, if the flux residue remains, the substrate to be welded is slowly corroded due to the corrosive action of the flux residue. Therefore, after the solder bonding is completed, the substrate to be bonded by soldering is cleaned to remove the flux residue. This washing generally uses a fluorocarbon solvent. Recently, however, the concept of environmental pollution has evolved to defluorination of hydrocarbons, and water is washed with water, or low residue with low solids after washing and bonding. ; No cleaning flux. - However, when the water system is washed, the water used in the washing is contaminated by heavy metals due to the use of water during washing. Further, in the case of a semiconductor element having a finer connection pitch structure, since the water-based cleaning method has a problem of poor detergency, a low-residue non-washing flux which is necessary for no cleaning is often used, and it is necessary to In the fluxing device used in the reflowing step -5, 201016652 In the flux used in the manufacture, it is necessary to reduce the joint strength of the weld and maintain the joint strength after a plurality of reflows. As a flux of a low residue, Patent Document 1 discloses a soldering agent which exhibits an activity of reducing the activity of the oxide film of the soldering surface by thermal decomposition at the time of solder joint bonding, which is substantially completely non-evaporated before solder bonding. A flux for bonding. The solvent is a solvent that slowly volatilizes after solder bonding and becomes a low residue flux by using this solvent. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. 8-112692. SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] The composition of the paste material in the solder paste is usually composed of a solder powder or a solvent. And solid parts (rosin, active agent, etc.). In the conventional non-cleaning flux described in the patent document, although the solid content is reduced and the halogen compound is not contained, the resin component such as rosin or the residue of the active agent or the like is necessarily produced after the solder joint. concern. — In addition, when it is necessary to manufacture an electronic circuit device in a plurality of reflow steps, if the solder paste used in t is not soldered and has an adhesive solder paste, the number of reflow steps can be reduced. Soldering together without giving excessive thermal stress. Accordingly, it has been demanded to develop a solder paste which does not melt the solder and has an adhesive force. The present invention has been made to solve the above problems, and in particular, the object of the present invention is to provide a flux which has adhesiveness and which does not cause residue after joining (welding together), and contains the aid. The conductive paste of the flux is bonded to each other by bonding members (joined together) formed by joining the constituent members, and a method of manufacturing the joined member. The present invention is as follows: 1. A flux which has two phenolic hydroxyl groups at two positions numbered adjacent to an aromatic ring, or a number of positions in the aromatic ring A flux having an aromatic compound having two phenolic hydroxyl groups at two positions, characterized in that one of the aromatic compounds has a melting point of 23 ° C or higher at atmospheric pressure. 2. The flux according to the above 1, wherein the aromatic compound has a vaporization temperature of 100 ° C or more at atmospheric pressure. 3. The flux according to the above-mentioned item 1 or 2, wherein the aromatic compound having two phenolic hydroxyl groups at two positions adjacent to the aromatic ring is a compound represented by the following formula (1), and ® An aromatic compound having two phenolic hydroxyl groups at two positions in which one of the above aromatic rings is opened is a compound represented by the following formula (2):

OH (1) (2) 201016652 【化2】OH (1) (2) 201016652 【化2】

OHOH

[上述通式(1)及(2)中,R表示院基,η表示0〜4 之整數]。 ^ 4.如上述1或2所述之助熔劑,其中上述芳香族環 _ 之鄰接位置編號之2個位置上具有兩個酚性羥基之芳香族 @ 化合物爲以下述通式(3)或下述通式(4)表示之化合物 ,且 在上述芳香族環之跳開一個位置編號之2個位置上具 有兩個酚性羥基之芳香族化合物爲以下述通式(5)表示 之化合物: 【化3】[In the above formulae (1) and (2), R represents a yard base, and η represents an integer of 0 to 4]. 4. The flux according to the above 1 or 2, wherein the aromatic ring having two phenolic hydroxyl groups at two positions adjacent to the aromatic ring is in the following formula (3) or The compound represented by the formula (4), and the aromatic compound having two phenolic hydroxyl groups at two positions in which the aromatic ring is skipped at one position is a compound represented by the following formula (5): 3

-8- 201016652 [上述通式(3)-(5)中,R表示烷基,η表示〇〜4 之整數]。 5. 如上述1至4中任一項所述之助熔劑,其中上述 芳香族化合物含有兩種類以上之化合物。 6. 如上述1至5中任一項所述之助熔劑,其在—大 氣壓、23°C之氛圍下爲固體。 ' 7. —種導電性糊漿,其特徵爲含有上述1至6中任 © 一項所述之助熔劑及導電性金屬粒子。 8. —種接合零件,其特徵爲使用上述7所述之導電 性糊漿接合構成構件與其他構成構件。 9. 一種接合零件之製造方法,其爲製造將構成構件 與其他構成構件接合而成之接合零件之方法,其特徵爲具 備於構成構件上塗佈上述7所述之導電性糊漿之導電性糊 漿之塗佈步驟,及於塗佈之導電性糊漿上載置其他構成構 件之零件載置步驟。 ❹ [發明效果] 本發明之助熔劑爲含有在芳香族環之相鄰位置編號之 2個位置上具有兩個酚性羥基,或在芳香族環之跳開一個 位置編號的2個位置上具有兩個酚性羥基之芳香族化合物 之助熔劑,藉由上述芳香族化合物之一大氣壓下之熔點爲 23 °C以上,使該助熔劑具有還原性,且可去除基板等上發 生之氧化被膜。又,該助熔劑具有接著性,且可僅藉由助 熔劑將零件彼此固定。據此,需要複數個零件搭載步驟及 -9 - 201016652 回焊步驟之接合零件(電子電路裝置等)中’亦可在未進 行導電性金屬粒子(焊料等)之熔融下進行電子零件等零 件間之位置定位等,且可在更少之回焊次數下進行接合( 焊接在一起等)。另外,本發明之助熔劑藉由含有上述芳 香族化合物,抑制電子零件等零件接合後之助熔劑於基板 上之殘渣,而可作爲無洗淨之助熔劑。 又,前述芳香族化合物之氣化溫度在一大氣壓下爲 _ 100°C以上時,將成爲助熔劑殘渣更難以殘留之助熔劑。 〇 又,本發明之導電性糊漿藉由含有本發明之助熔劑’ 而可抑制電子零件等之接合於基板上後產生之助熔劑殘渣 ,可不需要接合後之洗淨步驟。 又,本發明之接合零件藉由使用本發明之導電性糊漿 接合構成構件與其他構成構件,可在少的回焊次數下接合 ,因此可減輕對於構成構件及其他構成構件之過度熱應力 ,而可提供信賴性高的接合零件。 【實施方式】 [1 ]助熔劑 本發明之助熔劑之特徵爲含有在芳香族環之相鄰位置 編號之2個位置上具有兩個酚性羥基,或在芳香族環之跳 開一個位置編號的2個位置上具有兩個酚性羥基之芳香族 化合物(以下簡稱爲「芳香族化合物」)之助熔劑,上述 芳香族化合物之一大氣壓下之熔點爲23t以上。 上述芳香族化合物爲芳香族環之鄰接位置編號之2個 -10- 201016652 位置上具有兩個酚性羥基,或在芳香族環之跳開一個位置 編號之2個位置上具有兩個酚性羥基。本發明之助熔劑藉 由含有該芳香族化合物,可使該焊接在一起之基板等之金 屬表面上形成之氧化被膜還原,而可去除氧化被膜。因此 ,藉此提高所謂之焊接潤濕性。 又,本發明之助熔劑藉由含有該芳香族化合物,除具 ' 有前述還原性以外,亦具有接著性。因爲具有接著性,因 ® 此僅以助熔劑(亦不需利用熔融焊料)可使構成構件彼此 接著。 又,上述構成構件舉例爲例如零件搭載基板、晶片搭 載基板等各種基板、電子電路模組、覆晶1C、半導體晶片 等各種電子零件等(以下相同)。 另外,本發明之助熔劑藉由包含該芳香族化合物,除 上述還原性及上述接著性以外,接合後殘渣亦極難以殘存 ,因而不需要以往所需之助熔劑洗淨步驟。 W 上述芳香族化合物在一大氣壓下之熔點爲23 °C以上。 通常,該熔點在25(TC以下。由於芳香族化合物之熔點在 ' 23 °C以上,因此在室溫下亦可維持良好之密著力。該一大 氣壓下之熔點較好爲25~230°C,更好爲1〇〇〜200°C,又更 好爲 120~200°C。 上述芳香族化合物中之芳香族環之鄰接位置編號之2 個位置上具有兩個酚性羥基時之其位置編號舉例爲例如1 位及2位,2位及3位,3位及4位等。 另外,上述芳香族化合物中之芳香族環之跳開一個位 -11 - 201016652 置編號之2個位置上具有兩個酚性羥基時之位置編號舉例 爲例如1位及3位,2位及4位等。 前述芳香族化合物只要具有前述特性,則其構造並無 特別限制。前述芳香族化合物之骨架舉例爲例如苯、萘及 苊等。該等骨架中,以苯及萘較佳。尤其,更好爲以下述 通式(1) ~(5)表示之化合物: 【化1】-8- 201016652 [In the above formulas (3) to (5), R represents an alkyl group, and η represents an integer of 〇~4]. 5. The flux according to any one of the above 1 to 4, wherein the aromatic compound contains two or more kinds of compounds. 6. The flux according to any one of the above 1 to 5, which is solid under an atmosphere of atmospheric pressure at 23 °C. 7. A conductive paste comprising the flux and the conductive metal particles according to any one of the above 1 to 6. A joint component characterized by bonding a constituent member and another constituent member using the conductive paste described in the above 7. A method of producing a joined component, which is a method of producing a joined component obtained by joining a constituent member and another constituent member, characterized in that the conductive member is coated with the conductive paste described in the above seventh embodiment. The step of applying the paste and the step of placing the components on the coated conductive paste on the other constituent members. ❹ [Effect of the Invention] The flux of the present invention has two phenolic hydroxyl groups at two positions numbered adjacent to the aromatic ring, or has two positions at one position of the aromatic ring. The flux of the aromatic compound of the two phenolic hydroxyl groups is such that the melting point of the aromatic compound at 23 ° C or higher at atmospheric pressure makes the flux reductive, and the oxide film generated on the substrate or the like can be removed. Further, the flux has an adhesive property, and the parts can be fixed to each other only by the flux. According to this, it is necessary to carry out a plurality of parts mounting steps and joint parts (electronic circuit devices, etc.) of the -9 - 201016652 reflowing step, and it is also possible to carry out electronic parts and the like without melting the conductive metal particles (solder or the like). Positioning, etc., and joining (welding together, etc.) with fewer reflow times. Further, the flux of the present invention can be used as a flux-free flux by containing the above-mentioned aromatic compound and suppressing the residue of the flux on the substrate after joining of parts such as electronic parts. Further, when the vaporization temperature of the aromatic compound is _ 100 ° C or more at atmospheric pressure, it becomes a flux which is more difficult to remain as a flux residue. Further, the conductive paste of the present invention can suppress the flux residue generated after the electronic component or the like is bonded to the substrate by containing the flux of the present invention, and the cleaning step after bonding can be eliminated. Moreover, the joined component of the present invention can be joined to the other constituent members by using the conductive paste of the present invention, and can be joined with a small number of reflow times, thereby reducing excessive thermal stress on the constituent members and other constituent members. It can provide highly reliable joint parts. [Embodiment] [1] Flux The flux of the present invention is characterized by having two phenolic hydroxyl groups at two positions adjacent to each other in the aromatic ring, or numbering one position in the aromatic ring. A flux of an aromatic compound having two phenolic hydroxyl groups (hereinafter simply referred to as "aromatic compound") at two positions, and one of the aromatic compounds has a melting point of 23 t or more at atmospheric pressure. The above aromatic compound has two phenolic hydroxyl groups at two positions adjacent to the position number of the aromatic ring, and has two phenolic hydroxyl groups at two positions in the position of the aromatic ring. . The flux of the present invention can reduce the oxide film by reducing the oxide film formed on the surface of the metal substrate or the like which is welded together by containing the aromatic compound. Therefore, the so-called weld wettability is improved by this. Further, the flux of the present invention contains the aromatic compound and has an adhesive property in addition to the above-mentioned reducing property. Because of the adhesion, the constituent members can be continued with each other only by the flux (and without using molten solder). Further, the above-described constituent members are, for example, various electronic components such as a component mounting substrate and a wafer mounting substrate, electronic circuit modules, flip chip 1C, and semiconductor wafer (the same applies hereinafter). Further, the flux of the present invention contains the aromatic compound, and in addition to the above-mentioned reducing property and the above-mentioned adhesion, the residue after bonding is extremely difficult to remain, so that the flux cleaning step which has been conventionally required is not required. W The aromatic compound has a melting point of 23 ° C or higher at atmospheric pressure. Usually, the melting point is 25 (TC or less. Since the melting point of the aromatic compound is above 23 ° C, a good adhesion can be maintained at room temperature. The melting point at this atmospheric pressure is preferably 25 to 230 ° C. More preferably, it is from 1 〇〇 to 200 ° C, and more preferably from 120 to 200 ° C. The position of the aromatic ring in the aromatic compound in which the adjacent position number of the aromatic ring has two phenolic hydroxyl groups at two positions Examples of the number are, for example, 1 position and 2 positions, 2 positions and 3 positions, 3 positions and 4 positions, etc. In addition, the aromatic ring in the above aromatic compound is jumped at a position of -11 - 201016652. The position number of the phenolic hydroxyl group is exemplified by, for example, 1 position and 3 position, 2 position, 4 position, etc. The aromatic compound is not particularly limited as long as it has the above characteristics. For example, benzene, naphthalene, anthracene, etc., among these skeletons, benzene and naphthalene are preferred. In particular, compounds represented by the following general formulae (1) to (5) are more preferred:

OHOH

OHOH

OH (R) ηOH (R) η

(4)(4)

OH -12- (5) 201016652OH -12- (5) 201016652

【化5】 OH[Chemical 5] OH

表示 0~4 之整數]。Represents an integer from 0 to 4.].

上述通式(1)〜(5)之R中之烷基之碳數較好爲 1 ~ 1 〇,更好爲1〜8,又更好爲1〜5。該烷基之構造並無特 別限制,可爲直鏈狀,亦可具有側鏈(分支狀)。該烷基 舉例爲例如甲基、乙基、正丙基、異丙基、正丁基、異丁 基、第二丁基、第三丁基、戊基、異戊基、新戊基、己基 、庚基、辛基及2-乙基己基等。 另外,上述通式(1)~(5)中之n較好爲0〜2’更 好爲0或1。上述通式(1)~(5)中之η爲時’各 R可爲相同亦可不同。 亦即,作爲較佳之化合物’上述式(1)之化合物較 好係η爲0或1之以下述式(6)之化合物’上述式(2) 之化合物較好係η爲〇或1之下述式之化合物: 【化6】 R-f-The carbon number of the alkyl group in R of the above formulae (1) to (5) is preferably from 1 to 1 Torr, more preferably from 1 to 8, more preferably from 1 to 5. The structure of the alkyl group is not particularly limited, and may be linear or branched (branched). The alkyl group is exemplified by, for example, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, t-butyl, t-butyl, pentyl, isopentyl, neopentyl, hexyl. , heptyl, octyl and 2-ethylhexyl, and the like. Further, n in the above formulae (1) to (5) is preferably 0 to 2', more preferably 0 or 1. In the above formulae (1) to (5), when η is ', each R' may be the same or different. That is, as a preferred compound, the compound of the above formula (1) is preferably a compound of the following formula (6) wherein η is 0 or 1 and the compound of the above formula (2) is preferably η or 1. Compound of the formula: [Chemical 6] Rf-

⑹ -13- 201016652 【化7】(6) -13- 201016652 【化7】

[上述通式(6) ~(7)中,R表示氫原子或烷基]。 再者’作爲較佳之化合物,上述式(3)之化合物較 好係η爲0或1且,在苯環上之不具有上述酚性羥基之處[In the above formulae (6) to (7), R represents a hydrogen atom or an alkyl group]. Further, as a preferred compound, the compound of the above formula (3) preferably has a η of 0 or 1 and does not have the above phenolic hydroxyl group on the benzene ring.

鍵結有前述R之下述式(8)之化合物,上述式(4)之化 合物較好係η爲0或1且在苯環上之不具有上述酚性羥基 之處鍵結有前述R之下述式之化合物’上述式(5) 之化合物較好係11爲0或1且在苯環上之不具有上述紛性 羥基之處鍵結有前述尺之下述式(1〇)之化合物: 【化8 1a compound of the following formula (8) in which R is bonded, wherein the compound of the above formula (4) preferably has η of 0 or 1 and is bonded to the phenyl ring without the above phenolic hydroxyl group. The compound of the following formula: The compound of the above formula (5) is preferably a compound of the following formula (1) in which the above formula (1〇) is bonded to the benzene ring which does not have the above-mentioned hydroxy group. : 【化8 1

[上述通式(8)〜(10)中’ R表示氫原子或烷基]。 l -14- 201016652 該等芳香族化合物具體而言舉例爲間苯二甲酚、4-甲 基鄰苯二甲酚、4-第三丁基鄰苯二甲酚、3-甲基鄰苯二甲 酚、5-甲基間苯二甲酚、5-第三丁基間苯二甲酚、·1,2-二 羥基萘、1,3-二羥基萘及2,3-二羥基萘等。該等可僅使用 一種,亦可倂用兩種以上。該等芳香族化合物中,以4-甲 基鄰苯二甲酚及4_第三丁基二茶酚較佳。相較於該等其他 ' 之芳香族化合物,由於對金屬氧化物之還原能較強故而較 ❿佳。 另外,倂用兩種以上之上述芳香族化合物時,上述芳 香族化合物中,以倂用4-甲基鄰苯二甲酚與4-第三丁基鄰 苯二甲酚較佳。倂用該等時,相較於與其他倂用,由於對 金屬氧化物之還原能較強故而較佳。 另外,倂用時之調配比例並無特別限制,但以4-甲基 鄰苯二甲酚與4-第三丁基鄰苯二甲酚之合計作爲1〇〇莫耳 %時,以使4-甲基鄰苯二甲酚之比例成爲30〜80莫耳%較 ® 佳。在該範圍內可獲得特別優異之還原性效果。上述範圍 更好爲40〜70莫耳%,最好爲50〜60莫耳%。 又,上述芳香族化合物之氣化溫度在一大氣壓下較好 - 爲l〇〇°C以上。藉由使該溫度在100°C以上,接合(焊接 在一起等)之際,上述芳香族化合物經氣化,不發生殘渣 ’可成爲無洗淨助熔劑。該一大氣壓下之氣化溫度通常爲 400°C以下,更好爲150°C以上,又更好爲200°C以上。 又’所謂該一大氣壓下之氣化溫度係在一大氣壓之條 件下’在升溫之情況下觀察到重量減少之溫度。該氣化溫 -15- 201016652 度係以下述方法測定。亦即,使用示差熱天平(TG/DTA ),在氮氣下使系統內部升溫時,以最初觀察到之由於助 熔劑之氣化造成重量減少(通常,爲試料全部之5質量% 以上)之溫度作爲氣化溫度。 本發明之助熔劑中所含前述芳香族化合物之量並無特 別限制,可以助熔劑之一部份含有,亦可構成助熔劑之全 部量。亦即,例如以助熔劑全體作爲1 〇〇質量%時,前述 - 芳香族化合物可含有70〜100質量%。若前述芳香族化合物 參 之含量在該範圍之內,則可成爲還原性及低殘渣性優異之 助熔劑。該含量較好爲80〜100質量%,更好爲90〜100質 量%,最好爲95〜100質量%。 本發明之助熔劑只要達成本發明之目的即可,除前述 芳香族化合物以外,亦可含有其他成份。至於其他成份舉 例爲溶劑、活性劑及觸變性賦予劑等。該等可僅使用一種 ,亦可倂用兩種以上。 上述溶劑舉例爲醇類、酯類、醚類及烴類等。該溶劑 〇 舉例爲例如異丙醇、丁醇等一價醇類;乙二醇、二乙二醇 、三乙二醇、丙二醇、二丙二醇、三丙二醇、丁二醇'戊 - 二醇、己二醇等之二價醇類;乙二醇單甲基醚乙酸酯、乙 、 二醇單乙基醚乙酸酯等之乙二醇單烷基醚乙酸酯類;丙二 醇單甲基醚、丙二醇單乙基醚、丙二醇單丙基醚、丙二醇 單丁基醚等之丙二醇單烷基醚類;丙二醇二甲基醚、丙二 醇二乙基醚、丙二醇二丙基醚、丙二醇二丁基醚等之丙二 醇二烷基醚類;丙二醇單甲基醚乙酸酯、丙二醇單乙基醚 -16- 201016652 乙酸酯、丙二醇單丙基醚乙酸酯、丙二醇單丁基醚乙酸酯 等之丙二醇單烷基醚乙酸酯類;乙基溶纖素、丁基溶纖素 等之溶纖素類;丁基卡必醇等之卡必醇類;乳酸甲酯、乳 酸乙酯、乳酸正丙酯、乳酸異丙酯等之乳酸酯類;乙酸乙 酯、乙酸正丙酯、乙酸異丙酯、乙酸正丁酯、乙酸異丁酯 、乙酸正戊酯、乙酸異戊酯、丙酸異丙酯、丙酸正丁酯、 ' 丙酸異丁酯等之脂肪族羧酸酯類;3-甲氧基丙酸甲酯、3- β 甲氧基丙酸乙酯' 3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯 、丙酮酸甲酯、丙酮酸乙酯等之其他酯類;甲苯、二甲苯 等芳香族烴類;2-戊酮、3-戊酮、4-戊酮、環己酮等之酮 類;Ν-二甲基甲醯胺、Ν-甲基乙醯胺、Ν,Ν-二甲基乙醯胺 、Ν-甲基吡咯啶酮等之醯胺類;7·-丁內酯等之內酯類。 該等可僅使用一種,亦可倂用兩種以上。 本發明之助熔劑可含有溶劑。該溶劑之調配量並無特 別限制,但以芳香族化合物之合計作爲1 00質量份時,可 使用0.1~1〇0000質量份,較好爲1~1 0000質量份,更好 爲10〜1 00 0質量份。可藉由該溶劑之含量調製助熔劑之黏 度。亦即,可依據助熔劑之塗佈方法選擇適宜黏度,且該 ' 黏度可藉由上述範圍之溶劑量調製。 至於前述活性劑舉例爲氫氯酸及氫溴酸之胺鹽,以及 羧酸及其胺鹽。該活性劑舉例爲例如甲基胺、乙基胺、正 丙基胺、異丙基胺、正丁基胺等一級胺類;二甲基胺、二 乙基胺、二正丙基胺、二異丙基胺、二正丁基胺等二級胺 類;三甲基胺、三乙基胺、三正丙基胺、三異丙基胺等三 -17- 201016652 級胺類;單乙醇胺、二乙醇胺、三乙醇胺等烷醇胺類等之 氫氯酸鹽及氫溴酸鹽,以及草酸、丙二酸、琥珀酸、己二 酸、戊二酸、二乙基戊二酸、庚二酸、壬二酸、癸二酸、 馬來酸、富馬酸、二乙醇酸、癸酸、月桂酸、肉豆蔻酸、 棕櫚酸、綿羊油酸、油酸、硬脂酸、花生酸、山榆酸、亞 麻酸等脂肪族羧酸;苯甲酸等芳香族酸;羥基特戊酸、二 羥甲基丙酸、檸檬酸、蘋果酸、甘油酸、乳酸等羥基酸, — 及該等羧酸之胺鹽等。該等可僅使用一種,亦可倂用兩種 ® 以上。 前述觸變性賦予劑舉例爲例如蓖麻蠟(硬化蓖麻籽油 )等聚烯烴系蠟:間-二甲苯基雙硬脂酸醯胺等脂肪酸醯 胺;N-丁基-Ν’_硬脂醯尿素等取代之尿素蠛;聚乙二醇、 聚環氧乙烷、甲基纖維素、乙基纖維素、羥基乙基纖維素 等高分子化合物;氧化矽粒子、高嶺土粒子等無機粒子。 該等可僅使用一種,亦可倂用兩種以上。 本發明之助熔劑可含有觸變性賦予劑。該觸變性賦予 ® 劑之調配量並沒有特別限制,但以芳香族化合物之合計作 爲100質量份時,可使用0.1〜30質量份,較好爲0.1〜20 質量份,更好爲0.1〜1〇質量份。藉由該觸變性賦予劑之 含量可調製構成構件彼此之接著力。 又,本發明之助熔劑之性狀並無特別限制,亦即,可 爲固體亦可爲液體(包含糊漿,以下相同)。該固體意指 在一大氣壓及23 °C下之氛圍下,不管有無外力負荷均不會 流動之狀態。 -18- 201016652 另外,所謂的液體意指在一大氣壓及23 °C之氛圍下未 施加外力即呈流動之狀態。液體狀助熔劑之情況下,可爲 例如一大氣壓及溫度23°C下之黏度成爲0.001〇〇〇Pa. s 。該黏度可進一步成爲0.01〜800Pa· s,更可爲0.1~700Pa • s ° 本發明之助熔劑可爲上述狀態之任一種,亦可依據使 用狀況適當選擇。例如,固體狀之助熔劑可使用以載置於 ® 細片化目的之部位。又,液體狀之助熔劑可藉由網版印刷 等附著於目的部位上,又,可藉由塗佈附著於目的部位上 〇 又’本發明之助熔劑藉由含有上述芳香族化合物而可 發揮如前述之接著性。該接著性通常係透過在金屬與金屬 之間之本助熔劑產生,但液狀助熔劑有在更短時間內發揮 接著性之傾向。另一方面,固體狀助熔劑相較於液體狀助 熔劑有可到達獲得充分接著性之時間拉長之傾向。因此, 使用固體狀助熔劑時,較好進行加熱。進行該加熱時之溫 度較好在上述氣化溫度以下進行,尤其是比氣化溫度低 20~100°C之溫度,且高於熔點10〜50°C之溫度下進行較佳 [2]導電性糊漿 本發明之導電性糊漿含有本發明之前述助熔劑與導電 性金屬粒子。 上述助熔劑可直接使用前述本發明之助熔劑。本發日月 -19- 201016652 之導電性糊漿中所含前述助熔劑之量並無特別限制’但前 述助熔劑之含量以前述導電性糊漿作爲100質量%時’較 好爲〇 · 1 ~3 〇質量%,更好爲1〜20質量% ’又更好爲5〜1 〇 質量%。上述助熔劑之含量在上述範圍內時’可成爲基板 潤濕性優異之導電性糊漿。 前述導電性金屬粒子只要是可使金屬彼此接合化,或 ' 電子電路等中各構件(電子零件等)對基板之固定化之導 - 電性金屬粒子,則無特別限制’可使用習知之焊料粉或由 @ 金、銀、銅 '鋁及包含該等金屬之合金所構成之金屬粉等 。該等中,使用於在低溫下使金屬彼此接合時,以焊料粉 較佳。 該等焊料粉不僅可舉例爲例如Sn-Pb、Sn-Pb-Ag、Sn-Pb-Bi,Sn-Pb-In、Sn-Pb-Sb 等,亦可爲無鉛系 Sn-Sb 系合 金、Sn-Bi系合金、Sn-Ag系合金、Sn-Zn系合金(亦可添 加Ag、Cu、Bi、In、Ni、P等)等。該等可僅使用一種, 亦可倂用兩種以上。 〇 上述導電性金屬粒子之形狀亦可爲球形、不定形之任 一種。又,導電性金屬粒子之粒徑只要爲通常者即可,爲 - 球形時之直徑較好爲5~200&quot;m,更好爲5〜100#m,又更 - 好爲 5~50/zm。 又,該導電性金屬粒子之含量以導電性糊漿全體作爲 100質量%時,較好爲70~99.9質量%,更好爲80〜90質量 % ’又更好爲90〜95質量%。前述導電性金靥粒子之含量 在上述範圍內時,可成爲基板潤濕性優異之導電性糊漿。 -20- 201016652 又,本發明之導電性糊漿只要可達成本發明之目的, 則除含有前述芳香族化合物之助熔劑及導電性金屬粒子以 外,亦可含有其他添加劑。 本發明之導電性糊漿之製造方法舉例爲藉由慣用方法 混練前述之助熔劑及前述焊料粉,以及依據需要添加之添 加物之方法。混練之機械舉例爲例如真空攪拌機、混練裝 置、行星式攪拌機等。調配時之溫度及條件等並無特別限 ® 制,但通常於5〜2 5 °C混練較佳。 [3]接合零件 本發明之接合零件係使用本發明之前述導電性糊漿接 合構成構件與其他構成構件而成。 上述構成構件及其他構成構件只要爲藉由接合接著之 構件就無特別限制。該構件(構成構件及其他構成構件) 舉例爲例如零件搭載基板、晶片搭載基板等各種基板、電 — 子電路模組、覆晶1C、半導體晶片等各種電子零件等。 本發明之接合零件係透過源自本發明之導電性糊漿之 導電性金屬將上述構成構件彼此接合而成。 本發明之接合零件舉例爲例如圖1中所示之表面安裝 型電子基板(以下稱爲「安裝體」)。以下說明該安裝體 之例。 如圖1所示,該安裝體中,在零件搭載用之基板1之 零件連接用導體(以下稱爲「接面(conductive land) j )2a、2b上,透過源自本發明之導電性糊漿之導電性接合 -21 - 201016652 材(焊料等)23a、23b,使層合陶磁電容4之外部電極5a 、5 b予以接合。 上述接合零件之製造方法(使用本發明之導電性糊漿 時之接合方法)只要是使用本發明之導電性糊漿,接合上 述構成構件之製造方法即可,而無特別限制。舉例爲例如 具備導電性糊漿塗佈步驟及零件搭載步驟之該順序之一般 ’ 製造方法。亦即,本發明之接合零件之製造方法爲使構成 — 構件與其他構成構件接合而製造接合零件之方法,其特徵 參 爲具備將本發明之導電性糊漿塗佈於構成構件上之導電性 糊漿塗佈步驟,及將其他構成構件搭載於經塗佈之導電性 糊漿上之零件搭載步驟。 本發明之接合零件之製造方法通常係在前述零件搭載 步驟之後另具備回焊步驟。另外,較佳之製造方法舉例爲 在零件搭載步驟與回焊步驟之間具備預加熱步驟之方法。 亦即,使構成構件與其他構成構件接合而製造接合零 件之方法,其特徵爲具備將本發明之導電性糊漿塗佈於構 G 成構件上之導電性糊漿塗佈步驟,於經塗佈之導電性糊漿 上搭載其他構成構件之零件搭載步驟,以及不進行導電性 - 金屬粒子之熔融而使搭載有上述其他構成構件之構成構件 預加熱之預加熱步驟。另外,依據需要,在導電性金屬粒 子爲可熔融粒子(例如焊料粉)之情況下,具備使上述導 電性糊漿中所含之導電性金屬粒子熔融之回焊步驟。 以下說明前述本發明之接合構件之製造方法之例。 (1)導電性糊漿塗佈步驟:於具有圖2(a)中所示 -22- 201016652 之零件連接用導體(以下稱爲「接面」)2a、2b (構成構件)上,於接面2a、2b上印刷或塗佈 漿3a、3b[參照圖2 ( b)]。 (2 )零件搭載步驟··上述(1 )之步驟之後 性糊漿3a、3b上搭載具備外部電極5a、5b之電 (其他構成構件)[參照圖2(c)]。 ' (3 ) 預加熱步驟:於上述(2)之步驟之 ® 板1(構成構件)上印刷或塗佈導電性糊漿3a、 載有電子零件4(其他構成構件)者預加熱。藉 熱,使導電性糊漿13a、13b成爲黏液狀,進一 著力[參照圖2(d)]。藉由具有該接著力之導 13a、13b使基板1與電子零件4成接著狀態,電 係保持於導電性糊漿13a、13b上。接著,另外 外之電子零件搭載於上述基板1上時,可再次的 刷導電性糊漿,並於其上搭載電子零件。由於上 ® 前之搭載電子零件係搭載於藉由上述預加熱而展 之導電性糊漿上,故基板與電子零件係透過導電 * 著,不會出現位置偏移,且可搭載新的電子零件 - 導電性糊漿13a、13b由於具有接著力,因此在 電性金屬粒子之熔融下,亦可在基板1上輕易地 載零件間之位置定位等。 (4)回焊步驟:導電性金屬粒子爲可熔融 況下,上述預加熱之後,藉由通過回焊爐等進行 電性糊漿1 3 a、1 3 b中所含之導電性粒子熔融, 之基板1 導電性糊 ,於導電 子零件4 後,於基 3b,將搭 由該預加 步展現接 電性糊漿 子零件4 將前述以 塗佈或印 述預加熱 現接著力 性糊漿接 。另外, 未進行導 進行所搭 粒子之情 加熱使導 進行接合 -23- 201016652 。亦即,藉由導電性金屬接合構成構件及其他構成構件。 上述預加熱步驟中之加熱溫度可依據導電性金屬粒子 之種類做適當選擇,但較好爲80〜200°C,更好爲1〇〇〜180 °C。該預加熱步驟中之加熱溫度在上述範圍內時,上述導 電性糊漿展現出接著力,可接著基板與電子零件。又,預 加熱步驟可藉由一般之回焊爐等進行。 ' 上述回焊步驟中之加熱溫度可依據導電性金屬粒子之 - 種類做適當選擇,但較好爲200~3 50°C,更好爲250〜300 φ °C。該回焊步驟中之加熱溫度在上述範圍內時,上述導電 性糊漿中含有之助熔劑等經揮發,難以殘留助熔劑殘渣。 另外,上述導電性糊漿中含有之導電性金屬粒子經熔融, 可接合基板與電子零件。 本發明之導電性糊漿由於具有接著力,因此既使未使 導電性金屬成熔融狀態,亦可使基板與電子零件接著,且 可減少接合零件製造中之回焊次數。亦即,例如將電子零 件接合(焊接在一起等)而成之模組基板(其他構成構件 〇 )接合於母電路基板(構成構件)之情況下等,首先將電 子零件接合於模組基板上之後,有必要將該經接合之模組 - 基板(其他構成構件)接合於母電路基板(構成構件)上 - 。該情況下,接合於母電路基板上之模組基板朝母電路基 板接合時,可再度的通過回焊爐,作爲模組基板係經第二 次回焊。 然而,使用本發明之導電性糊漿時,首先,將電子零 件接著於模組基板上。接著,將接著該電子零件之模組基 -24- 201016652 板接著於母電路基板上。接著,藉由使接著有模組基板之 母電路基板通過回焊爐’可進行模組基板及母基板完全接 合。藉此,接合零件製造中之回焊可僅進行一次。 亦即’該接合零件之製造方法爲使用本發明之導電性 糊漿,使接合構成構件與其他構成構件接合製造接合零件 之方法,其可具備下列步驟:於第一構成構件上塗佈導電 性糊漿之導電性第一糊漿塗佈步驟,於經塗佈之導電性糊 ® 漿上搭載第二構成構件之第一零件搭載步驟,將搭載有前 述第二構成構件之第一構成構件不進行導電性金屬粒子之 熔融而進行預加熱,使前述第二構成構件與上述第一構成 構件接著之第一預加熱步驟,於上述第三構成構件上塗佈 導電性糊漿之導電性第二糊漿塗佈步驟,及視需要於經塗 佈之導電性糊漿上搭載接著有第二構成構件之第一構成構 件之第二零件搭載步驟,將搭載有前述第一構成構件之第 三構成構件不進行導電性金屬粒子之熔融而進行預加熱, 胃 使上述第一構成構件與上述第三構成構件接著之第二預加 熱步驟,及視需要在導電性粒子爲可熔融之粒子之情況下 ' ,使上述導電性糊漿中所含導電性金屬粒子熔融之回焊步 驟。 對電子基板等之接合零件過度熱應力有產生基板上接 合之導電性金屬粒子熔融,或由於膨脹等造成基板或接合 部龜裂等之顧慮。導電性金屬粒子之熔融或龜裂會發生短 路不良、基板與電子零件接合強度降低等異常之顧慮》 據此,使用本發明之導電性糊漿時,可在不賦予過度 -25- 201016652 熱應力下進行接合,可提供信賴性高的接合零件。 本發明之接合零件由於使用本發明之導電性糊漿接合 ,因此接合後難以殘留助熔劑殘渣,並無必要洗淨接合後 之接合零件。再者,接合中由於可減輕過度熱應力,因此 可成爲接合信賴性高之接合零件。 [實施例] — 以下,針對本發明列舉實施例具體說明。又,本發明 〇 並不受該等實施利之任何限制。且,實施例中之「份」若 無特別說明則爲質量基準。另外,實施例及比較例中黏度 (Pa · s )之測定係以下列方法進行。 [黏度] 以東機產業公司製造之E型黏度劑 RE-105H測定。 Π]固體狀助熔劑之調製 ® &lt;實施例1&gt; 使用表1中之實施例1〜4中所示之芳香族化合物作爲 固體狀助熔劑。 · -26- 201016652 [表1] 表1 m 晒 比較例 1 2 3 4 5 6 1 助 固形分 芳香族 間苯二甲酚一 300 - - - - 100 - 熔 (計300質 化合物 2,3-羥基萘 - - 300 - - - 劑 量份) (份) 甲基鄰苯二甲 - 300 - 150 100 - 第三丁基鄰苯二甲酚 • - 300 - 150 100 - 其他 mm 松香 調配(份) 300 溶劑 Γ 種類 - 苯甲醇 調配(份) 60 物 於23。。之型態 固體 固體 固體 固體 液體 液體 液體 性 氣化溫度(。〇 160 130 140 215 140 145 黏度(Pa.s) - - - - 570 630 600 [2]液體狀助熔劑之調製 &lt;實施例5及6&gt; 混合表1中之實施例5及6所示之芳香族化合物,將 該混合物加熱至100 °C,且藉由攪拌至成爲液狀爲止,獲 得液體助熔劑。又,該液體狀助熔劑在大氣壓氛圍及室溫 下爲液狀,冷卻至5°C時亦不會再結晶化。另外,該液體 狀助熔劑在一大氣壓、23 °C之氛圍下之黏度(Pa· 〇 — 倂列於表1。 &lt;比較例1 &gt; 混合表1中之比較例1所示之化合物與溶劑,將該混 合物加熱至1〇〇 °C,且藉由攪拌至成爲液狀爲止,獲得液 -27- 201016652 體助熔劑。又,該液體狀助熔劑在大氣壓氛圍及室溫下爲 液狀,冷卻至5 °C時亦不會再結晶化。又,該液體狀助熔 劑在一大氣壓、23 °C之氛圍下之黏度(Pa · s ) —倂列於 表1。 [3]助熔劑之評價 對由實施例1〜6及比較例1獲得之助熔劑進行評價, 結果列於表2中。 φ (氧化膜(氧化銅)基板之製作) 將銅以ΙΟ/zm之厚度蒸鍍於矽晶圓(厚度1mm,直 徑20 cm )上製作銅基板。隨後,將該銅基板放置於在一 大氣壓、空氣中之200 °C加熱板上加熱6小時,獲得單面 完全氧化之氧化膜(氧化銅)基板。 (氧化膜(氧化錫)基板之製作) ® 將錫以l〇Mm之厚度蒸鍍於矽晶圓(厚度1mm,直 徑20cm )上製作錫基板。隨後,將該錫基板放置於在一 大氣壓、空氣中之20(TC加熱板上加熱6小時,獲得單面 - 完全氧化之氧化膜(氧化錫)基板。 (1)以氧化膜(氧化銅)基板評價固體狀助熔劑( 實施例1〜4)之接著性 取〇.5g之固體狀助熔劑,均勻散佈於上述氧化膜( 氧化銅)基板之上(氧化膜形成面),且在加熱板上加熱 -28- 201016652 固體狀助熔劑直至成爲液狀爲止。接著,使散佈於基板上 之助熔劑熔融後,將另一片相同種類之氧化膜基板以氧化 膜形成面接觸熔融狀態之助熔劑之方式重疊,使兩片氧化 膜基板之氧化膜形成面透過熔融之助熔劑無間隙地附著。 使附著後之兩片氧化膜基板冷卻至室溫,以目視評價氧化 膜(氧化銅)基板是否強固接著。強固接著之情況評價爲 ' 「〇」,未強固接著時評價爲「X」。 ® (2)以氧化膜(氧化錫)基板評價固體狀助熔劑( 實施例1~4 )之接著性 取0.5 g之固體狀助熔劑,均勻散佈於上述氧化膜( 氧化錫)基板之上(氧化膜形成面),且在加熱板上加熱 固體狀助熔劑直至成爲液狀爲止。接著,使散佈於基板上 之助溶劑熔融後,將另一片相同種類之氧化膜基板以氧化 膜形成面接觸熔融狀態之助熔劑之方式重叠,使兩片氧化 膜基板之氧化膜形成面透過熔融之助熔劑無間隙地附著。 ® 使附著後之兩片氧化膜基板冷卻至室溫,以目視評價氧化 膜(氧化錫)基板是否強固地接著。強固接著之情況評價 ' 爲「〇」,未強固接著時評價爲「xj 。 (3 )以氧化膜(氧化銅)基板評價液體狀助熔劑( 實施例5、6及比較例1 )之接著性 使液體狀之助熔劑,均勻塗佈於上述氧化膜(氧化銅 )基板上(氧化膜形成面),將另一片相同種類之氧化膜 基板以氧化膜形成面接觸液體狀助熔劑之方式重疊,使兩 片氧化膜基板之氧化膜形成面透過液體狀助熔劑無間隙地 -29- 201016652 附著。經過24小時後,以目視評價氧化膜(氧化銅)基 板是否強固地接著。強固接著之情況評價爲「〇」,未強 固接著時評價爲「X」。 (4)以氧化膜(氧化錫)基板評價液體狀助熔劑( 實施例5、6及比較例1 )之接著性 使液體狀之助熔劑,均勻塗佈於上述氧化膜(氧化錫 )基板上(氧化膜形成面),將另一片相同種類之氧化膜 - 基板以氧化膜形成面接觸液體狀助熔劑之方式重疊,使兩 @ 片氧化膜基板之氧化膜形成面透過液體狀助熔劑無間隙地 附著。經過24小時後,以目視評價氧化膜(氧化錫)基 板是否強固地接著。強固接著之情況評價爲「〇」,未強 固接著時評價爲^ X」。 (5 )助熔劑之氧化膜還原性評價 以加熱板加熱前述接著性評價後之各基板。該基板係 具有透過固體狀助熔劑或液體狀助熔劑附著並重叠之兩片 氧化膜基板者。接著,測定展現還原作用之溫度。該展現 © 還原作用之溫度在氧化膜爲氧化銅時,爲其氧化膜之顏色 由黑色變成紅金色之溫度。另外,氧化膜爲氧化錫時,爲 該氧化膜之顏色由紫黑色變成白色之溫度。 - (6 )助熔劑之殘渣評價 在氮氣氛圍下將上述接著性評價後之各基板置於加熱 板上,且以與焊料熔融溫度相等之250°C下加熱120分鐘 。該基板係具有透過固體狀助熔劑或液體狀助熔劑附著並 重疊之兩片氧化膜基板者。接著,對加熱後之氧化膜基板 -30- 201016652 表面上評價有無殘渣。殘渣之評價係以目視觀察前述加熱 後之氧化膜基板’完全未觀察到染色或焦黑之情況,作爲 無殘渣而評價爲「〇」。又觀察到染色或焦黑之情況,作 爲有殘渣而評價爲「X」。[In the above formulae (8) to (10), "R represents a hydrogen atom or an alkyl group]. L -14- 201016652 These aromatic compounds are specifically exemplified by meta-xylenol, 4-methyl phthalic phenol, 4-tert-butyl phthalic phenol, 3-methyl phthalic acid Cresol, 5-methylisoxyl phenol, 5-tert-butyl metaxyl phenol, ·1,2-dihydroxynaphthalene, 1,3-dihydroxynaphthalene, and 2,3-dihydroxynaphthalene . These may be used alone or in combination of two or more. Among these aromatic compounds, 4-methyl phthalic phenol and 4-tert-butyl catechol are preferred. Compared to these other 'aromatic compounds', it is better because of the stronger reduction of metal oxides. Further, when two or more kinds of the above aromatic compounds are used, among the above aromatic compounds, 4-methyl phthalic phenol and 4-tert-butyl phthalyl phenol are preferable. When these are used, it is preferable because it is stronger than the other metal. In addition, the ratio of blending at the time of use is not particularly limited, but when the total of 4-methyl phthalic phenol and 4-tert-butyl phthalic phenol is 1% by mole, so that 4 The ratio of -methyl phthalic phenol is 30 to 80 mol% better than ®. A particularly excellent reducing effect can be obtained within this range. The above range is preferably from 40 to 70 mol%, preferably from 50 to 60 mol%. Further, the vaporization temperature of the above aromatic compound is preferably at most atmospheric pressure - more than 10 °C. When the temperature is 100 ° C or higher and the bonding (welding, etc.) is carried out, the aromatic compound is vaporized, and no residue is formed, and the cleaning agent can be used as a no-clean flux. The gasification temperature at this atmospheric pressure is usually 400 ° C or lower, more preferably 150 ° C or higher, and still more preferably 200 ° C or higher. Further, the so-called gasification temperature at the atmospheric pressure is under the condition of one atmosphere, and the temperature at which the weight is reduced is observed at the time of temperature rise. The gasification temperature -15 - 201016652 degree was measured by the following method. That is, when the temperature inside the system is raised by nitrogen using a differential thermal balance (TG/DTA), the temperature which is initially observed due to vaporization of the flux is reduced (usually, the mass of the sample is 5% by mass or more). As the gasification temperature. The amount of the aromatic compound contained in the flux of the present invention is not particularly limited, and may be contained in one part of the flux or may constitute the entire amount of the flux. In other words, for example, when the entire flux is 1% by mass, the aromatic compound may be contained in an amount of 70 to 100% by mass. When the content of the aromatic compound is within this range, it can be used as a flux having excellent reducibility and low residue. The content is preferably from 80 to 100% by mass, more preferably from 90 to 100% by mass, most preferably from 95 to 100% by mass. The flux of the present invention may be used for the purpose of the present invention, and may contain other components in addition to the above aromatic compound. As other examples, the solvent, the active agent and the thixotropic agent are mentioned. These may be used alone or in combination of two or more. The solvent is exemplified by alcohols, esters, ethers, hydrocarbons, and the like. The solvent hydrazine is exemplified by monovalent alcohols such as isopropyl alcohol and butanol; ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, butanediol 'pentane-diol, and Divalent alcohols such as diols; ethylene glycol monomethyl ether acetates such as ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate; propylene glycol monomethyl ether; Propylene glycol monoethyl ether such as propylene glycol monoethyl ether, propylene glycol monopropyl ether or propylene glycol monobutyl ether; propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dipropyl ether, propylene glycol dibutyl ether, etc. Propylene glycol dialkyl ethers; propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether-16- 201016652 acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, etc. Monoalkyl ether acetates; cellosolves such as ethyl cellosolve and butyl cellosolve; carbitol such as butyl carbitol; methyl lactate, ethyl lactate, n-propyl lactate, lactic acid Lactic acid esters such as isopropyl ester; ethyl acetate, n-propyl acetate, isopropyl acetate, n-butyl acetate , isobutyl acetate, n-amyl acetate, isoamyl acetate, isopropyl propionate, n-butyl propionate, aliphatic carboxylic acid esters such as 'isobutyl propionate; 3-methoxypropionic acid Other esters of methyl ester, ethyl 3-β-methoxypropionate, methyl 3-acetoxypropionate, ethyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate; toluene An aromatic hydrocarbon such as xylene; a ketone such as 2-pentanone, 3-pentanone, 4-pentanone or cyclohexanone; Ν-dimethylformamide, Ν-methylacetamide, hydrazine , decylamine such as hydrazine-dimethylacetamide or hydrazine-methylpyrrolidone; lactones such as 7-butyrolactone. These may be used alone or in combination of two or more. The flux of the present invention may contain a solvent. The amount of the solvent is not particularly limited. When the total amount of the aromatic compound is 100 parts by mass, it may be used in an amount of 0.1 to 1,000,000 parts by mass, preferably 1 to 100,000 parts by mass, more preferably 10 to 1 part by mass. 00 0 parts by mass. The viscosity of the flux can be modulated by the amount of the solvent. That is, the appropriate viscosity can be selected according to the method of applying the flux, and the 'viscosity can be modulated by the solvent amount of the above range. As the aforementioned active agents, exemplified are amine salts of hydrochloric acid and hydrobromic acid, and carboxylic acids and amine salts thereof. The active agent is exemplified by a primary amine such as methylamine, ethylamine, n-propylamine, isopropylamine or n-butylamine; dimethylamine, diethylamine, di-n-propylamine, and a secondary amine such as isopropylamine or di-n-butylamine; a tris--17-201016652 amine such as trimethylamine, triethylamine, tri-n-propylamine or triisopropylamine; monoethanolamine, Hydrochloric acid hydrochlorides and hydrobromides of alkanolamines such as diethanolamine and triethanolamine, and oxalic acid, malonic acid, succinic acid, adipic acid, glutaric acid, diethyl glutaric acid, and pimelic acid , azelaic acid, azelaic acid, maleic acid, fumaric acid, diglycolic acid, citric acid, lauric acid, myristic acid, palmitic acid, oleic acid, oleic acid, stearic acid, arachidic acid, hawthorn An aliphatic carboxylic acid such as acid or linolenic acid; an aromatic acid such as benzoic acid; a hydroxy acid such as hydroxypivalic acid, dimethylolpropionic acid, citric acid, malic acid, glyceric acid or lactic acid, and the like Amine salts and the like. These can be used alone or in combination of two or more. The thixotropy imparting agent is exemplified by a polyolefin wax such as castor wax (hardened castor seed oil): a fatty acid guanamine such as m-dimethylphenyl distearate decylamine; N-butyl-Ν'_ste A urea compound such as ruthenium oxide or the like; a polymer compound such as polyethylene glycol, polyethylene oxide, methyl cellulose, ethyl cellulose or hydroxyethyl cellulose; or inorganic particles such as cerium oxide particles and kaolin particles. These may be used alone or in combination of two or more. The flux of the present invention may contain a thixotropic imparting agent. The amount of the thixotropy-imparting agent is not particularly limited, and may be 0.1 to 30 parts by mass, preferably 0.1 to 20 parts by mass, more preferably 0.1 to 1 part by weight based on 100 parts by mass of the total of the aromatic compound. 〇 mass parts. The adhesion of the constituent members to each other can be modulated by the content of the thixotropic imparting agent. Further, the properties of the flux of the present invention are not particularly limited, that is, it may be a solid or a liquid (including a paste, the same applies hereinafter). The solid means a state in which the flow does not flow with or without an external force under an atmosphere of atmospheric pressure and 23 °C. -18- 201016652 In addition, the term "liquid" means a state in which no external force is applied in an atmosphere of one atmosphere and 23 °C. In the case of a liquid flux, for example, the viscosity at an atmospheric pressure and a temperature of 23 ° C is 0.001 〇〇〇 Pa.s. The viscosity may further be 0.01 to 800 Pa·s, and more preferably 0.1 to 700 Pa·s °. The flux of the present invention may be any of the above-described conditions, and may be appropriately selected depending on the use conditions. For example, a solid flux can be used to place the part for ® chipping purposes. Further, the liquid flux can be attached to the target site by screen printing or the like, and can be applied to the target site by coating, and the flux of the present invention can be exhibited by containing the aromatic compound. As described above. This adhesion is usually generated by the flux between the metal and the metal, but the liquid flux tends to exert a subsequent nature in a shorter period of time. On the other hand, the solid flux tends to elongate over a period of time to obtain sufficient adhesion compared to a liquid flux. Therefore, when a solid flux is used, it is preferred to carry out heating. The temperature at which the heating is carried out is preferably carried out below the vaporization temperature, especially at a temperature lower than the gasification temperature by 20 to 100 ° C, and at a temperature higher than the melting point of 10 to 50 ° C to conduct the preferred [2] conductivity. Slurry The conductive paste of the present invention contains the aforementioned flux and conductive metal particles of the present invention. The flux described above can be directly used as the flux of the present invention. The amount of the flux contained in the conductive paste of the present invention is not particularly limited. However, when the content of the flux is 100% by mass of the conductive paste, it is preferably 〇·1 ~3 〇 mass%, more preferably 1 to 20 mass% 'more preferably 5 to 1 〇 mass%. When the content of the flux is within the above range, it can be a conductive paste excellent in substrate wettability. The conductive metal particles are not particularly limited as long as they are metal-bonded metal particles that can be bonded to each other in the electronic circuit or the like, and the like. Powder or metal powder composed of @金, silver, copper 'aluminum and an alloy containing the metals. Among these, it is preferable to use a solder powder when bonding metals to each other at a low temperature. The solder powders can be exemplified by, for example, Sn-Pb, Sn-Pb-Ag, Sn-Pb-Bi, Sn-Pb-In, Sn-Pb-Sb, etc., or lead-free Sn-Sb-based alloys, Sn. -Bi-based alloy, Sn-Ag-based alloy, Sn-Zn-based alloy (addition of Ag, Cu, Bi, In, Ni, P, etc.). These may be used alone or in combination of two or more. 〇 The shape of the conductive metal particles may be either spherical or amorphous. Further, the particle diameter of the conductive metal particles may be a normal one, and the diameter of the spherical metal is preferably 5 to 200 &quot; m, more preferably 5 to 100 #m, and more preferably 5 to 50 / zm. . In addition, when the content of the conductive metal particles is 100% by mass based on the total amount of the conductive paste, it is preferably 70 to 99.9% by mass, more preferably 80 to 90% by mass, and still more preferably 90 to 95% by mass. When the content of the conductive gold ruthenium particles is within the above range, the conductive paste having excellent substrate wettability can be obtained. -20- 201016652 Further, the conductive paste of the present invention may contain other additives in addition to the flux containing the aromatic compound and the conductive metal particles as long as it can achieve the object of the invention. The method for producing the conductive paste of the present invention is exemplified by a method of kneading the above-mentioned flux and the above-mentioned solder powder by a conventional method, and an additive to be added as needed. Examples of the kneading machine are, for example, a vacuum mixer, a kneading device, a planetary mixer, and the like. The temperature and conditions at the time of blending are not particularly limited to ®, but it is usually better at 5 to 2 5 °C. [3] Joining member The joined component of the present invention is obtained by joining the constituent member and other constituent members using the conductive paste of the present invention. The above-described constituent members and other constituent members are not particularly limited as long as they are joined by the members. The members (constituting member and other constituent members) are, for example, various electronic components such as a component mounting substrate and a wafer mounting substrate, various electronic components such as an electric circuit module, a flip chip 1C, and a semiconductor wafer. The joined component of the present invention is obtained by joining the constituent members to each other through a conductive metal derived from the conductive paste of the present invention. The joint component of the present invention is exemplified by, for example, a surface mount type electronic substrate (hereinafter referred to as "mounting body") shown in Fig. 1. An example of the mounting body will be described below. As shown in Fig. 1, in the mounting body, the component-connecting conductors (hereinafter referred to as "conductive land j" 2a, 2b of the substrate 1 for component mounting are passed through the conductive paste of the present invention. Conductive bonding of the slurry - 21,106,652 (materials such as solder) 23a, 23b, and bonding of the external electrodes 5a and 5b of the laminated ceramic capacitor 4. The manufacturing method of the above-mentioned bonding component (when the conductive paste of the present invention is used) The bonding method is not particularly limited as long as the conductive paste of the present invention is used, and the method for producing the above-described constituent members is not particularly limited. For example, the order of the conductive smear application step and the component mounting step is generally included. The manufacturing method of the joined component of the present invention is a method of manufacturing a joined component by joining the constituent member to another constituent member, and is characterized in that the conductive paste of the present invention is applied to the constituent member. The conductive paste application step and the component mounting step of mounting the other component on the coated conductive paste. The method of manufacturing the joint component of the present invention Usually, a reflow step is additionally provided after the component mounting step. Further, a preferred manufacturing method is a method in which a preheating step is provided between the component mounting step and the reflow step. That is, the constituent member is joined to other constituent members. The method for producing a joined component is characterized in that a conductive paste application step of applying the conductive paste of the present invention to a G-forming member is provided, and other constituent members are mounted on the coated conductive paste. The component mounting step and the preheating step of preheating the constituent members on which the other constituent members are mounted without performing the conductivity-melting of the metal particles. Further, the conductive metal particles are meltable particles (for example, solder) as needed. In the case of the powder), a step of reflowing the conductive metal particles contained in the conductive paste is provided. An example of the method for producing the joined member of the present invention will be described below. (1) Conductive paste coating Step: The component connecting conductors (hereinafter referred to as "junctions") 2a, 2b having the -22-201016652 shown in Fig. 2(a) (constituting members) On at junction 2a, the paste printed or coated 2b 3a, 3b [with reference to FIG. 2 (b)]. (2) After the step of the above-described (1), the electric paste (the other constituent members) including the external electrodes 5a and 5b are mounted on the slabs 3a and 3b (see Fig. 2(c)). (3) Preheating step: Preheating is performed by printing or coating the conductive paste 3a on the ® plate 1 (constituting member) of the above step (2), and carrying the electronic component 4 (other constituent members). By the heat, the conductive pastes 13a and 13b are made into a slimy state, and the force is increased [see Fig. 2(d)]. The substrate 1 and the electronic component 4 are brought into a state of being in contact with each other by the guides 13a and 13b having the adhesion force, and are electrically held on the conductive pastes 13a and 13b. Next, when the other electronic component is mounted on the substrate 1, the conductive paste can be brushed again, and the electronic component can be mounted thereon. Since the mounted electronic components are mounted on the conductive paste that has been preheated as described above, the substrate and the electronic components are electrically conductive, and there is no positional shift, and new electronic components can be mounted. - Since the conductive pastes 13a and 13b have an adhesive force, the position of the position between the parts can be easily carried on the substrate 1 under the melting of the electric metal particles. (4) Reflowing step: when the conductive metal particles are in a meltable state, the conductive particles contained in the electrical slags 1 3 a and 1 3 b are melted by a reflow furnace or the like after the preheating. Substrate 1 conductive paste, after the conductive sub-part 4, on the base 3b, the pre-added step is used to display the electrically conductive paste part 4 to coat or print the preheated adhesive paste Pick up. In addition, the conduction of the particles is not carried out and the conduction is carried out -23- 201016652. That is, the member and other constituent members are joined by a conductive metal joint. The heating temperature in the preheating step may be appropriately selected depending on the kind of the conductive metal particles, but is preferably from 80 to 200 ° C, more preferably from 1 to 180 ° C. When the heating temperature in the preheating step is within the above range, the conductive paste exhibits an adhesive force, which can be followed by the substrate and the electronic component. Further, the preheating step can be carried out by a general reflow furnace or the like. The heating temperature in the above-mentioned reflowing step can be appropriately selected depending on the type of the conductive metal particles, but is preferably 200 to 3 50 ° C, more preferably 250 to 300 φ ° C. When the heating temperature in the reflowing step is within the above range, the flux or the like contained in the conductive paste is volatilized, and it is difficult to leave the flux residue. Further, the conductive metal particles contained in the conductive paste are melted to bond the substrate and the electronic component. Since the conductive paste of the present invention has an adhesive force, the substrate can be brought into contact with the electronic component without the conductive metal being melted, and the number of times of reflow in the production of the joined component can be reduced. In other words, for example, when a module substrate (other components 〇) in which electronic components are joined (welded together) are bonded to a mother circuit board (constituting member), etc., first, electronic components are bonded to a module substrate. After that, it is necessary to bond the bonded module-substrate (other constituent members) to the mother circuit substrate (constituting member). In this case, when the module substrate bonded to the mother circuit board is joined to the mother circuit board, the reflow oven can be passed again, and the module substrate can be reflowed a second time. However, when the conductive paste of the present invention is used, first, the electronic component is attached to the module substrate. Next, the module base -24 - 201016652 of the electronic component is then mounted on the mother circuit substrate. Then, the module substrate and the mother substrate can be completely joined by passing the mother circuit board with the module substrate through the reflow furnace. Thereby, the reflow in the manufacture of the joint parts can be performed only once. That is, the method of manufacturing the joined component is a method of producing a joined component by bonding the bonded constituent member to another constituent member using the conductive paste of the present invention, and may have the following steps: applying conductivity to the first constituent member a first first component mounting step of mounting a second constituent member on the coated conductive paste® slurry, and a first constituent member on which the second constituent member is mounted Preheating is performed without melting the conductive metal particles, and the first preheating step is performed between the second constituent member and the first constituent member, and the conductivity of the conductive paste is applied to the third constituent member. a second paste application step, and a second component mounting step of mounting the first constituent member of the second constituent member on the coated conductive paste as needed, and mounting the first constituent member The third constituent member is preheated without melting the conductive metal particles, and the second preheating step of the first constituent member and the third constituent member is performed by the stomach. And optionally in the case where the conductive particles are particles of meltable ', so that the melting of the conductive particles of the conductive metal paste reflow step contained. Excessive thermal stress on the joined component such as an electronic substrate may cause melting of the conductive metal particles bonded to the substrate, or cracking of the substrate or the joint due to expansion or the like. The melting or cracking of the conductive metal particles may cause a short-circuit defect, and the bonding strength between the substrate and the electronic component may be lowered. Therefore, when the conductive paste of the present invention is used, the excessive thermal stress of -25-201016652 may not be imparted. Bonding underneath provides a highly reliable joint part. Since the joined component of the present invention is joined by using the conductive paste of the present invention, it is difficult to leave the flux residue after the joining, and it is not necessary to clean the joined component after joining. Further, since the excessive thermal stress can be alleviated during the joining, it is possible to form a joining component having high bonding reliability. [Examples] - Hereinafter, specific examples of the invention will be described. Further, the present invention is not limited by the implementations. Further, the "parts" in the examples are based on mass unless otherwise specified. Further, the measurement of the viscosity (Pa · s ) in the examples and the comparative examples was carried out in the following manner. [Viscosity] Measured by E-type viscosity agent RE-105H manufactured by Toki Sangyo Co., Ltd. Π] Modulation of solid flux ® &lt;Example 1&gt; The aromatic compound shown in Examples 1 to 4 of Table 1 was used as a solid flux. · -26- 201016652 [Table 1] Table 1 m drying comparison example 1 2 3 4 5 6 1 co-solidification of aromatic meta-xylenol-300 - - - - 100 - melting (300 compounds 2, 3- Hydroxynaphthalene - - 300 - - - Dosage (parts) Methylphthalic acid - 300 - 150 100 - Tert-butyl phthalic phenol • - 300 - 150 100 - Other mm Rosin blending (parts) 300 Solvent Γ Type - Benzyl alcohol blending (parts) 60 in 23. . Liquid solid gasification temperature of solid solid solid liquid liquid (. 〇160 130 140 215 140 145 viscosity (Pa.s) - - - - 570 630 600 [2] Modulation of liquid flux &lt;Example 5 And 6> mixing the aromatic compounds shown in Examples 5 and 6 in Table 1, heating the mixture to 100 ° C, and obtaining a liquid flux by stirring until it became liquid. Further, the liquid aid The flux is liquid at atmospheric pressure and room temperature, and will not recrystallize when cooled to 5 ° C. In addition, the viscosity of the liquid flux under atmospheric pressure and 23 ° C atmosphere (Pa· 〇 - 倂The results are shown in Table 1. <Comparative Example 1 &gt; The compound and the solvent shown in Comparative Example 1 in Table 1 were mixed, and the mixture was heated to 1 ° C and stirred until it became liquid. -27- 201016652 Body flux. In addition, the liquid flux is liquid at atmospheric pressure and room temperature, and will not recrystallize when cooled to 5 ° C. Moreover, the liquid flux is at atmospheric pressure, The viscosity (Pa · s) in an atmosphere of 23 °C is listed in Table 1. [3] Help Evaluation of the flux The fluxes obtained in Examples 1 to 6 and Comparative Example 1 were evaluated, and the results are shown in Table 2. φ (Production of oxide film (copper oxide) substrate) Copper was deposited at a thickness of ΙΟ/zm A copper substrate was fabricated on a wafer (thickness: 1 mm, diameter: 20 cm). Then, the copper substrate was placed on a hot plate at 200 ° C for 1 hour under atmospheric pressure in air to obtain a single-sided fully oxidized oxide film. (Copper oxide) substrate (Production of oxide film (tin oxide) substrate) ® Tin is deposited on a tantalum wafer (thickness: 1 mm, diameter: 20 cm) by a thickness of 10 μm. Then, the tin substrate is formed. Placed in an atmosphere of 20 atmospheres in air (heated on a TC heating plate for 6 hours to obtain a single-sided, fully oxidized oxide film (tin oxide) substrate. (1) Evaluation of solid flux with an oxide film (copper oxide) substrate The adhesion of (Examples 1 to 4) was measured by taking 5 g of a solid flux, which was uniformly spread on the above oxide film (copper oxide) substrate (oxide film formation surface), and heated on a hot plate -28-201016652 The solid flux until it becomes liquid. After melting the flux dispersed on the substrate, another oxide film substrate of the same type is superposed on the oxide film forming surface in contact with the flux in a molten state, and the oxide film forming faces of the two oxide film substrates are fused. The flux was adhered without a gap. The two oxide film substrates after the adhesion were cooled to room temperature, and the oxide film (copper oxide) substrate was visually evaluated for robustness. The case of the adhesion was evaluated as " ", which was not strong. The evaluation was "X". (2) The adhesion of the solid flux (Examples 1 to 4) was evaluated on an oxide film (tin oxide) substrate, and 0.5 g of a solid flux was uniformly dispersed in the above oxide film ( On the substrate of the tin oxide (oxide film formation surface), the solid flux is heated on the hot plate until it becomes liquid. Then, after the co-solvent dispersed on the substrate is melted, another oxide film substrate of the same type is superposed so that the oxide film forming surface is in contact with the flux in a molten state, and the oxide film forming faces of the two oxide film substrates are fused. The flux adheres without gaps. ® The two oxide film substrates after the adhesion were cooled to room temperature to visually evaluate whether or not the oxide film (tin oxide) substrate was firmly adhered. In the case of strengthening, the evaluation was "〇", and when it was not strong, it was evaluated as "xj. (3) The adhesion of the liquid flux (Examples 5 and 6 and Comparative Example 1) was evaluated on an oxide film (copper oxide) substrate. The liquid flux is uniformly applied to the oxide film (copper oxide) substrate (oxide film formation surface), and another oxide film substrate of the same type is overlapped with the oxide film formation surface in contact with the liquid flux. The oxide film forming surface of the two oxide film substrates was adhered through the liquid flux -29-201016652 without gaps. After 24 hours, the oxide film (copper oxide) substrate was visually evaluated to be firmly adhered to. It is "〇", and it is evaluated as "X" when it is not strong. (4) Evaluation of the adhesion of the liquid flux (Examples 5 and 6 and Comparative Example 1) with an oxide film (tin oxide) substrate, and uniformly applying a liquid flux to the oxide film (tin oxide) substrate (Oxide film forming surface), another oxide film of the same type - the substrate is overlapped with the oxide film forming surface in contact with the liquid flux, so that the oxide film forming surface of the two @膜膜膜 substrates passes through the liquid flux without gap Ground attachment. After 24 hours, it was visually evaluated whether or not the oxide film (tin oxide) substrate was firmly adhered. The case of the strongest is evaluated as "〇", and when it is not strong, it is evaluated as ^X". (5) Oxidation film reduction evaluation of flux The respective substrates after the adhesion evaluation were heated by a heating plate. The substrate has two oxide film substrates which are adhered and overlapped by a solid flux or a liquid flux. Next, the temperature at which the reduction was exhibited was measured. This display © The temperature at which the reduction is performed when the oxide film is copper oxide, and the color of the oxide film changes from black to red gold. Further, when the oxide film is tin oxide, the temperature of the oxide film changes from purple black to white. - (6) Evaluation of residue of flux The substrates after the above adhesion evaluation were placed on a hot plate under a nitrogen atmosphere, and heated at 250 ° C for 120 minutes at the same temperature as the melting temperature of the solder. The substrate has two oxide film substrates which are adhered and overlapped by a solid flux or a liquid flux. Next, the surface of the heated oxide film substrate -30-201016652 was evaluated for the presence or absence of residue. The evaluation of the residue was carried out by visually observing the case where the dyed substrate or the blackened black was not observed at the above-mentioned heated oxide film substrate, and it was evaluated as "〇" as no residue. Further, the case of dyeing or burnt black was observed, and it was evaluated as "X" as a residue.

[表2] 表2 接著性評價 還原性評價 殘留物評價 氧化膜種類 氧化銅 氧化錫 氧化銅 氧化錫 氧化銅 氧化錫 實施例1 〇 〇 180°c 220〇C 〇 〇 實施例2 〇 〇 160°C 160°C 〇 〇 實施例3 〇 〇 180°C 195〇C 〇 〇 實施例4 〇 〇 160°C 180°C 〇 〇 實施例5 〇 〇 150°C 170°C 〇 〇 實施例6 〇 〇 160°C 200°C 〇 〇 比較例1 X X 160°C 175〇C X X 由表2之結果,本發明之助熔劑組成物不僅對金屬氧 化物之還原能優異,且基板接著性亦優異且完全不發生會 對電路絕緣性產生不良影響之殘渣,故爲具有以往助熔劑 組成物所沒有之優異特性者。 【圖式簡單說明】 圖1爲本發明之接合零件之部分剖面圖。 圖2爲顯示使用含有本發明之助熔劑之導電性糊漿之 -31 - 201016652 接合零件之製造方法之部分剖面圖。 【主要元件符號說明】 1 :基板 2a,2b :接面 3a,3b,13a,1 3b :導電性糊漿 4 :電子零件 ~ 5a,5b:外部電極 _ 23a,23b:導電性接合材(焊料等)[Table 2] Table 2 Subsequent evaluation Reductive evaluation Residue evaluation Oxide film type Copper oxide Tin oxide Copper oxide Tin oxide Copper oxide Tin oxide Example 1 〇〇180°c 220〇C 〇〇Example 2 〇〇160° C 160 ° C 〇〇 Example 3 〇〇 180 ° C 195 〇 C 〇〇 Example 4 〇〇 160 ° C 180 ° C 〇〇 Example 5 〇〇 150 ° C 170 ° C 〇〇 Example 6 〇〇 160 ° C 200 ° C 〇〇 Comparative Example 1 XX 160 ° C 175 〇 CXX As a result of Table 2, the flux composition of the present invention is excellent not only for the reduction of metal oxides, but also excellent substrate adhesion and no There is a residue which adversely affects the insulation of the circuit, and therefore it has an excellent characteristic which the conventional flux composition does not have. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a partial cross-sectional view showing a joint part of the present invention. Fig. 2 is a partial cross-sectional view showing a method of manufacturing a joined part of -31 - 201016652 using a conductive paste containing the flux of the present invention. [Main component symbol description] 1 : Substrate 2a, 2b: junction 3a, 3b, 13a, 1 3b: conductive paste 4: electronic component ~ 5a, 5b: external electrode _ 23a, 23b: conductive bonding material (solder Wait)

-32--32-

Claims (1)

201016652 七、申請專利範圍 1 · 一種助熔劑,其爲含有在芳香族環之相鄰位置編 號之2個位置上具有兩個紛性經基,或在芳香族環之跳開 一個位置編號的2個位置上具有兩個酚性羥基之芳香族化 合物之助熔劑,其特徵爲 前述芳香族化合物之一大氣壓下之熔點爲23 °C以上。 2. 如申請專利範圍第1項之助熔劑,其中前述芳香 ® 族化合物之氣化溫度在一大氣壓下爲100°C以上。 3. 如申請專利範圍第1或2項之助熔劑,其中前述 芳香族環之鄰接位置編號之2個位置上具有兩個酚性羥基 之芳香族化合物爲以下述通式(1)表示之化合物,且 在前述芳香族環之跳開一個位置編號之2個位置上具 有兩個酚性羥基之芳香族化合物爲以下述通式(2)表示 之化合物: 【化1】201016652 VII. Patent Application No. 1 · A flux which has two divergent radicals at two positions numbered adjacent to an aromatic ring, or two in the aromatic ring A flux having an aromatic compound having two phenolic hydroxyl groups at one position, wherein one of the aromatic compounds has a melting point of 23 ° C or higher at atmospheric pressure. 2. The flux according to claim 1, wherein the aromatic compound compound has a gasification temperature of 100 ° C or more at atmospheric pressure. 3. The flux according to claim 1 or 2, wherein the aromatic compound having two phenolic hydroxyl groups at two positions adjacent to the aromatic ring is a compound represented by the following formula (1) The aromatic compound having two phenolic hydroxyl groups at two positions in which the aromatic ring is opened at one position is a compound represented by the following formula (2): 【化2】[Chemical 2] [前述通式(1)及(2)中,R表示烷基,η表示〇〜4 之整數]。 4.如申請專利範圍第1或2項之助熔劑,其中前述 -33- 201016652 芳香族環之鄰接位置編號之2個位置上具有兩個酚性羥基 之芳香族化合物爲以下述通式(3)或下述通式(4)表示 之化合物,且 在前述芳香族環之跳開一個位置編號之2個位置上具 有雨個酚性羥基之芳香族化合物爲以下述通式(5)表示 之化合物: 【化3】[In the above formulae (1) and (2), R represents an alkyl group, and η represents an integer of 〇~4]. 4. The flux according to claim 1 or 2, wherein the aromatic compound having two phenolic hydroxyl groups at two positions adjacent to the adjacent position number of the -33-201016652 aromatic ring is represented by the following formula (3) Or a compound represented by the following formula (4), and an aromatic compound having a phenolic hydroxyl group at two positions in which the aromatic ring is jumped at one position is represented by the following formula (5) Compound: 【化3】 【化5 OH[5 OH (5) 表不 0〜4 之整數]。 5. 如申請專利範圍第1至4項中任一項之助熔劑, 其中前述芳香族化合物含有兩種類以上之化合物。 6. 如申請專利範圍第1至5項中任一項之助熔劑, 其在一大氣壓、23 °C之氛圍下爲固體。 7. —種導電性糊漿,其特徵爲含有申請專利範圍第1 -34- 201016652 至6項中任一項之助熔劑及導電性金屬粒子。 8. —種接合零件,其特徵爲使用申請專利範圍第7 項之導電性糊漿接合構成構件與其他構成構件。 9. 一種接合零件之製造方法,其爲製造將構成構件 與其他構成構件接合而成之接合零件之方法,其特徵爲具 備於構成構件上塗佈申請專利範圍第7項之導電性糊漿之 導電性糊漿之塗佈步驟’及於塗佈之導電性糊漿上載置其 ® 他構成構件之零件載置步驟。(5) Tables are integers from 0 to 4]. 5. The flux according to any one of claims 1 to 4, wherein the aromatic compound contains two or more types of compounds. 6. The flux according to any one of claims 1 to 5, which is solid under an atmosphere of atmospheric pressure at 23 °C. A conductive paste comprising a flux and a conductive metal particle according to any one of claims 1 to 34 to 201016652 to 6. 8. A joint part characterized in that the conductive paste is used to join the constituent member and other constituent members using the conductive paste of the seventh aspect of the patent application. A method of manufacturing a joined component, which is a method of manufacturing a joined component obtained by joining a constituent member and another constituent member, and is characterized in that the conductive paste is coated on the constituent member in the seventh aspect of the patent application. The coating step of the conductive paste and the step of placing the component on the coated conductive paste. -35--35-
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US11978570B1 (en) 2022-12-08 2024-05-07 Geckos Technology Corp. Antioxidant conductive thermal paste and method of manufacturing the same

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