TW201015644A - Method for manufacturing gas sensor and structure thereof - Google Patents

Method for manufacturing gas sensor and structure thereof Download PDF

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Publication number
TW201015644A
TW201015644A TW097139621A TW97139621A TW201015644A TW 201015644 A TW201015644 A TW 201015644A TW 097139621 A TW097139621 A TW 097139621A TW 97139621 A TW97139621 A TW 97139621A TW 201015644 A TW201015644 A TW 201015644A
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TW
Taiwan
Prior art keywords
opening
gas sensor
sensing
width
carrier
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TW097139621A
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Chinese (zh)
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TWI372428B (en
Inventor
Chih-Hui Yang
Hua-Ping Chen
Heng-Ting Liu
Lin-Hsin Chen
Tun-Yu Chen
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Int Semiconductor Tech Ltd
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Priority to TW097139621A priority Critical patent/TWI372428B/en
Publication of TW201015644A publication Critical patent/TW201015644A/en
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Publication of TWI372428B publication Critical patent/TWI372428B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

Method for manufacturing gas sensor comprises the steps of providing a sensor chip having an active surface, a plurality of gold bumps, a sensor film disposed on the active surface and a protecting layer covered the sensor film, the protecting layer has an outside annular wall and a exposing surface; flipping chip the sensor chip on a carrier having an upper surface, a lower surface and a opening through the upper surface and the lower surface, the opening has an annular wall, and the protecting layer is contained into the opening and the exposing surface protrudes the lower surface, wherein between the annular wall of the opening and the outside annular wall of the protecting layer has a space; potting a sealant into the active surface, the outside annular wall, the annular wall and the space to seal the gold bumps, and the sealant exposes the exposing surface; removing the protecting layer to expose the sensor film; disposing a main board on the lower surface of the carrier, and a window of the main board exposes the sensor film.

Description

201015644 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種感測器製造方法，特別係有關於 一種氣體感測器製造方法。 【先前技術】 如第1A至1D圖所示，習知氣體感測器製造方法係包 含有下列步驟：請參閱第1A圖，提供一承載器11〇，該 〇 承載器U〇係具有一承載表面111及複數個連接墊112; 接著，請參閱第1B圖，設置一感測晶片12〇於該承載表 面111並以複數個銲線130電性連接該感測晶片12〇與該 承載器110，該感測晶片120係具有—主動面121、一形 成於該主動面121之感測薄膜122及一覆蓋該感測薄膜 122之保護層123;之後，請參閱第lc圖，將該承載器11〇 與該感測晶片12〇置入一模具10中，並注入一底部填充 膠I40於該模具10中以密封該些銲線uo·，最後，請參閱 第1D圖，移除該模具10及該保護層123以顯露出該感測 薄膜122,形成一氣體感測器100。然而，在進行注膠之 步驟時，該底部填充膠140容易因為製程控制不當使得該 底部填充膠14〇覆蓋該保護層123,因此該保㈣123無 法順利移除，進而導致產品良率不佳。 【發明内容】 本發明之主要目的係在於提供—種氣體感測器製造 方法，其係包含有下列步驟：提供—感測晶片，該感測晶 片係具有一主動面、f面、複數個金凸塊、一設置於該 201015644 主動面之感測薄膜及一覆蓋該感測薄膜之保護層，該保護 層係具有一外環壁及一顯露面；覆晶接合該感測晶片於一 承載器，該承栽器係具有一上表面、一下表面與一貫穿該 上表面及该下表面之開口，該開口係具有一環壁，該感測 曰曰片之該保護層係容設於該開口内且該顯露面係凸出於 °亥承載器之該下表面，其中該開口之該環壁與該保護層之 。亥外環壁間係具有一空隙；點塗形成一密封膠於該感測晶 〇片之9亥主動面、該保護層之該外環壁、該開口之該環壁及 °玄I隙中以雄、封該些金凸塊，該密封膠係顯露該保護層之 4 ”、、員露面’移除該保護層以顯露出該感測薄膜；以及設置 主機板於該承載器之該下表面，該主機板係具有一窗口 乂 ‘”、貝露。玄感測薄膜。由於該感測晶片之該保護層係容設於 3亥開口内且該顯露面係凸出於該承載器之該下表面，因此 該密封膠係可顯露該保護層之該顯露面具有可輕易移除 該保護層，且節省模具成本之功效。 〇 【實施方式】 一 π參閱第2A至2E圖，依據本發明之一具體實施例信 揭示一種氣體感㈣製造方法，其係包含有下列步驟：售 先’:青參閱第2A圖’提供一感測晶片21〇，該感測晶片 210係具有一主動面、一背面212、複數個金凸塊⑴ 又置於該主動面211之感測薄膜214及一覆蓋該感測费 膜⑴之保護層215,該保制215係具有一外環壁215 及-顯露面⑽；接著，請參閱第2B圖，覆晶接合該肩 測晶片210於-承載器22〇,在本實施例中，該承載器η 201015644 係可選自於 BT 樹脂基板（Bismaleimide Triazine substrate ) 或薄膜基板，該承載器220係具有一上表面221、一下表 面222、一貫穿該上表面221及該下表面222之開口 223、 複數個第一連接墊224及複數個第二連接墊225，該開口 223係具有一環壁223a ’該感測晶片2 1 0之該保護層2 1 5 係容設於該開口 223内且該顯露面215b係凸出於該承載 器220之該下表面222，另，該感測薄膜214係具有一第 〇 一寬度W卜該開口 223係具有一第二寬度W2，該第二寬 度W2係大於該第一寬度.wi，該保護層215係具有一第 三寬度W3，該第三寬度W3係大於該第一寬度W1，因此 該保s蔓層21 5係可完全覆蓋該感測薄膜2丨4以保護該感測 /專膜2 1 4，且該保護層2 1 5係可容設於該開口 2 2 3内，該 些第一連接墊224係位於該上表面221，該些第二連接墊 225係位於該下表面222，其中該開口 223之該環壁223a 與該保護層215之該外環壁215a間係具有一空隙A，該感 〇 測晶片2 1 〇之該些金凸塊2 1 3係電性連接至該些第一連接 墊224，之後，請參閱第2C圖，點塗形成一密封膠230 於該感測晶片2 1 0之該主動面2 11、該保護層2 1 5之該外 環壁215a、該開口 223之該環壁223&及該空隙A中以密 封忒些金凸塊213，該密封膠230係可由該空隙a或該感 測晶片210之該些金凸塊213外側進行跸塗，在本實施例 中，係由該開口 223之該環壁223 a與該保護層215之該 外環壁215a間之該空隙A點塗該密封膠23〇，該密封膠 230係流佈於該感測晶片21〇之該主動面211、該保護層 201015644 215之該外環壁215a、該開口 223之該環壁223a及該空 隙A中以密封該些金凸塊213，該密封膠230係具有一頂 面23 1 ’由該頂面23 1至該感測晶片2 10之該主動面2 11 係具有一第一高度H1，該保護層215之該顯露面215b至 該感測晶片2 1 0之該主動面2 11係具有一第二高度H2， 該第二高度H2係大於該第一高度H1，故，該密封膠230 係顯露該保護層2 1 5之該顯露面2 1 5b ;接著，請參閱第 〇 2D圖’移除該保護層2 1 5以顯露出該感測薄膜2 1 4，在本 實施例中，該密封膠230係形成於該感測晶片210之該主 動面2 11及該開口 223之該環壁223a以密封該些金凸塊 2 1 3 ’並顯露出該感測薄膜2丨4，其中形成於該開口 223之 該環壁223a之該密封膠230係具有一第一側壁232及一 第二側壁233，該第一側壁232及該第二側壁233之間係 具有一間距S，該間距S係介於該第一寬度w 1與該第二 寬度W2之間，因此該密封膠230係顯露該感測薄膜214， ❹ 且該密封膠230之該頂面23 1係位於該感測晶片2 1 〇之該 主動面211與該承載器220之該下表面222之間，此外， 該感測晶片2 1 0係另具有一連接該主動面2丨丨及該背面 2 12之側面2 1 6，該密封膠23 0係亦形成於該側面2丨6 ;最 後’請參閱第2E圖，設置一主機板240於該承載器22〇 之該下表面222 ’該主機板240係具有一窗口 241以顯露 該感測薄膜214 ’在此步驟中’係另包含有：設置複數個 銲球250於該承載器220之該些第二連接墊225以電性連 接該承載器220與該主機板240，以形成一氣體感測器 201015644 2〇〇。由於該感測晶片210之該保護層2i5係容設於該開 口 223内且該顯露面215b係凸出於該承载器22〇之該下 表面222,因此該密封膠23〇係可顯露該保護層215之該 顯露面215b，具有可輕易移除該保護層215，且節省模具 成本之功效 本發明之保護範圍當視後附之申請專利範圍所界定 者為準，任何熟知此項技藝者，在不脫離本發明之精神和 〇 範圍内所作之任何變化與修改，均屬於本發明之保護範 圍。 【圖式簡單說明】 第1A至1D圖：習知氣體感測器製造方法之截面示意圖。 第2A至2E圖：依據本發明之一具體實施例，一種氣體感 測器製造方法之截面示意圖。 【主要元件符號說明】 10 模具 100 氣體感測器 110 承載器 111 承載表面 112 連接墊 120 感測晶片 121 主動面 122 感測薄膜 123 保護層 130 銲線 140 底部填充 200 氣體感測器 210 感測晶片 211 主動面 212 背面 213 金凸塊 214 感測薄膜 215 保護層 215a 外環壁 215b 顯露面 216 側面 220 承載器 221 上表面 222 下表面 10 201015644 223 開口 223a 環壁 224 第一連接墊 225 第二連接墊 230 密封膠 23 1 頂面 232 第一侧壁 233 第二側壁 240 主機板 241 窗口 250 銲球 A 空隙 HI 第一高度 H2 第二高度 S 間距 W1 第一寬度 W2 第二寬度 W3 第三寬度 〇 11201015644 IX. Description of the Invention: [Technical Field] The present invention relates to a method of manufacturing a sensor, and more particularly to a method of manufacturing a gas sensor. [Prior Art] As shown in FIGS. 1A to 1D, the conventional gas sensor manufacturing method includes the following steps: Referring to FIG. 1A, a carrier 11A is provided, the 〇 carrier U 具有 has a bearing a surface 111 and a plurality of connection pads 112. Next, referring to FIG. 1B, a sensing wafer 12 is disposed on the carrying surface 111 and electrically connected to the sensing wafer 12 and the carrier 110 by a plurality of bonding wires 130. The sensing chip 120 has an active surface 121, a sensing film 122 formed on the active surface 121, and a protective layer 123 covering the sensing film 122. Thereafter, refer to the lc. 11〇 and the sensing wafer 12〇 are placed in a mold 10, and an underfill rubber I40 is injected into the mold 10 to seal the bonding wires uo·, and finally, refer to FIG. 1D to remove the mold 10 The protective layer 123 is formed to expose the sensing film 122 to form a gas sensor 100. However, when the step of injecting the glue is performed, the underfill 140 is likely to cover the protective layer 123 due to improper process control, so that the (four) 123 cannot be smoothly removed, resulting in poor product yield. SUMMARY OF THE INVENTION The main object of the present invention is to provide a gas sensor manufacturing method comprising the steps of: providing a sensing wafer having an active surface, an f surface, and a plurality of gold a bump, a sensing film disposed on the active surface of the 201015644, and a protective layer covering the sensing film, the protective layer having an outer ring wall and a revealing surface; the flip chip bonding the sensing chip to a carrier The implant has an upper surface, a lower surface, and an opening extending through the upper surface and the lower surface, the opening having a ring wall, the protective layer of the sensing blade being received in the opening And the exposed surface protrudes from the lower surface of the carrier, wherein the annular wall of the opening and the protective layer. The outer ring wall has a gap; the dot coating forms a sealant on the 9-well active surface of the sensing wafer, the outer ring wall of the protective layer, the ring wall of the opening, and the 玄I gap Sealing the gold bumps, the sealant reveals the protective layer 4", the person's appearance" removes the protective layer to reveal the sensing film; and the motherboard is disposed under the carrier On the surface, the motherboard has a window 乂'", Beilu. Mysterious sensing film. Since the protective layer of the sensing chip is accommodated in the 3H opening and the exposed surface protrudes from the lower surface of the carrier, the sealing adhesive can reveal the exposed surface of the protective layer easily The protective layer is removed and the cost of the mold is saved.实施 [Embodiment] A π refers to FIGS. 2A to 2E, and according to an embodiment of the present invention, a method for manufacturing a gas sensation (four) is disclosed, which comprises the following steps: selling ': 青see FIG. 2A' provides a The sensing wafer 210 has an active surface, a back surface 212, a plurality of gold bumps (1) and a sensing film 214 disposed on the active surface 211 and a protection covering the sensing film (1). The layer 215 has an outer ring wall 215 and a revealing surface (10); then, referring to FIG. 2B, the shoulder wafer 210 is flip-chip bonded to the carrier 22, in this embodiment, The carrier η 201015644 can be selected from a BT resin substrate (Bismaleimide Triazine substrate) or a film substrate. The carrier 220 has an upper surface 221, a lower surface 222, and an opening 223 extending through the upper surface 221 and the lower surface 222. a plurality of first connection pads 224 and a plurality of second connection pads 225. The openings 223 have a ring wall 223a. The protection layer 2 1 5 of the sensing wafer 2 10 is received in the opening 223 and the opening The exposed surface 215b protrudes from the carrier 220 The surface 222, further, the sensing film 214 has a second width W. The opening 223 has a second width W2, the second width W2 being greater than the first width .wi, the protective layer 215 has a third width W3, the third width W3 is greater than the first width W1, so the smear layer 2 5 can completely cover the sensing film 2丨4 to protect the sensing/film 2 1 4, The first connection pad 224 is located on the upper surface 221, and the second connection pads 225 are located on the lower surface 222, wherein the opening is located in the opening 2 2 3 Between the ring wall 223a of the 223 and the outer ring wall 215a of the protective layer 215, a gap A is formed, and the gold bumps 2 1 3 of the sensing chip 2 1 are electrically connected to the first The pad 224 is connected. Then, referring to FIG. 2C, a sealant 230 is formed on the active surface 2 11 of the sensing wafer 2 10 , the outer ring wall 215 a of the protective layer 2 1 5 , and the opening 223 . The ring walls 223 & and the gap A are used to seal the gold bumps 213 , and the sealant 230 can be the gaps a or the gold bumps 213 of the sensing wafer 210 . The side is subjected to smear coating. In this embodiment, the sealant 23 is applied by the gap A between the ring wall 223 a of the opening 223 and the outer ring wall 215 a of the protective layer 215. The sealant 230 is applied. The active surface 211 of the sensing wafer 21 , the outer ring wall 215 a of the protective layer 201015644 215 , the ring wall 223 a of the opening 223 , and the gap A to seal the gold bumps 213 . The sealant 230 has a top surface 23 1 ' from the top surface 23 1 to the active surface 2 11 of the sensing wafer 2 10 having a first height H1, the exposed surface 215b of the protective layer 215 The active surface 2 11 of the wafer 210 has a second height H2, and the second height H2 is greater than the first height H1. Therefore, the sealant 230 reveals the exposed surface of the protective layer 2 15 . 2 1 5b ; Next, please refer to FIG. 2D FIG. 2 to remove the protective layer 2 1 5 to expose the sensing film 2 1 4 . In the embodiment, the sealant 230 is formed on the sensing wafer 210 . The active surface 2 11 and the annular wall 223a of the opening 223 to seal the gold bumps 2 1 3 ′ and expose the sensing film 2丨4, wherein The sealant 230 of the ring wall 223a of the opening 223 has a first sidewall 232 and a second sidewall 233. The first sidewall 232 and the second sidewall 233 have a spacing S therebetween. Between the first width w 1 and the second width W2 , the sealant 230 exposes the sensing film 214 , and the top surface 23 1 of the sealant 230 is located on the sensing wafer 2 1 . The active surface 211 is disposed between the lower surface 222 of the carrier 220 and the side surface 221 of the back surface 2 12 . The sealant 23 0 is also formed on the side surface 2丨6; finally, please refer to FIG. 2E, and a motherboard 240 is disposed on the lower surface 222 of the carrier 22〇. The motherboard 240 has a window 241 to reveal The sensing film 214 'in this step' further includes: a plurality of solder balls 250 disposed on the second connection pads 225 of the carrier 220 to electrically connect the carrier 220 and the motherboard 240 to A gas sensor 201015644 2〇〇 is formed. Since the protective layer 2i5 of the sensing wafer 210 is received in the opening 223 and the exposed surface 215b protrudes from the lower surface 222 of the carrier 22, the sealant 23 can reveal the protection. The exposed surface 215b of the layer 215 has the function of easily removing the protective layer 215 and saving the cost of the mold. The scope of the present invention is defined by the scope of the appended claims, and anyone skilled in the art, Any changes and modifications made without departing from the spirit and scope of the invention are intended to be included in the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1D are schematic cross-sectional views showing a conventional method of manufacturing a gas sensor. 2A to 2E are schematic cross-sectional views showing a method of manufacturing a gas sensor in accordance with an embodiment of the present invention. [Main component symbol description] 10 Mold 100 Gas sensor 110 Carrier 111 Bearing surface 112 Connection pad 120 Sensing wafer 121 Active surface 122 Sensing film 123 Protective layer 130 Bonding wire 140 Underfill 200 Gas sensor 210 Sensing Wafer 211 active surface 212 back side 213 gold bump 214 sensing film 215 protective layer 215a outer ring wall 215b exposed surface 216 side 220 carrier 221 upper surface 222 lower surface 10 201015644 223 opening 223a ring wall 224 first connection pad 225 second Connection pad 230 sealant 23 1 top surface 232 first side wall 233 second side wall 240 main board 241 window 250 solder ball A gap HI first height H2 second height S pitch W1 first width W2 second width W3 third width 〇11

Claims (1)

201015644 、申請專利範圍： 、一種氣體感測器製造方法，其係包含： 提供一感測晶片，該感測晶片係具有一主動面 面、複數個金凸塊、一設置於該主動面之感測薄= 一覆盍該感測薄膜之保護層，該保護層 壁及一顯露面； 卜衣 Ο 3 覆晶接合該感測晶片於一承载器，該承載器係具有— 上表面、一下表面與一貫穿該上表面及該下而— 口，該開口係具有一環壁’該感測晶 = 交执机4 M ^ 丨木邊層係 备δ又於该開口内且該顯露面係凸出於該承栽器之該 下表面’其中該開口之該環壁與該保護層之該 : 間係具有一空隙； 點塗形成-密封膠於該感測晶片之該主動面、該保沒 層之該外環壁、該開口之該環壁及該空隙中以密料 些金凸塊，該密封膠係顯露該保護層之該顯露面； 移除該保護層以顯露出該感測薄膜；以及 設置一主機板於該承載器之該下表面，該主機板係具 有一窗口以顯露該感測薄臈。 2 如申明專利範圍第1項所述之氣體感測器製造方法， 其中4在封膠係具有一頂面，由該頂面至該感測晶片 之该主動面儀且右一 ^ /、 一咼度’該保護層之該顯露面 至該感測晶片之該主動面係具有一第二高度，該第二 高度係大於該第一高度。 如申請專利_ i項所述之氣體感測器製造方法， 12 201015644 其中該感測薄膜係具有一第一寬度，該開口係具有一 第二寬度，該第二寬度係大於該第一寬度。 4、如申請專利範圍第3項所述之氣體感測器製造方法， 其中形成於該開口之該環壁之該密封膠係具有一第 一側壁及一第二側壁，該第一側壁及該第二側壁之間 係具有一間距，該間距係介於該第一寬度與該第二寬 度之間。 0 5、如申請專利範圍第3項所述之氣體感測器製造方法， 其中該保護層係具有一第三寬度，該第三寬度係大於 該第一寬度。 6、 如申請專利範圍第丨項所述之氣體感測器製造方法， 其中該感測晶片係另具有一連接該主動面及該背面 之側面，該密封膠係形成於該側面。 7、 如申請專利範圍第丨項所述之氣體感測器製造方法， 其中該承載器係選自於BT樹脂基板（Bismaleimide D Triazine substrate)或薄膜基板。 8、 如申請專利範圍第丨項所述之氣體感測器製造方法， 其中忒承載器係另真有複數個第一連接墊及複數個 第二連接墊，該些第一連接墊係位於該上表面，該些 第二連接塾係位於該下表面。 9、 如申請專利範圍第8項所述之氣體感測器製造方法， 其中該些金凸塊係電性連接至該些第―連接塾。 10、如申請專利範圍第8項所述之氣體感測器製造方法， 其另包含有：設置複數個銲球於該承載器之該些第二 13 201015644 11 ' 12、 Ο ❹ 13 疋丧琢承栽器與該主機 如申請專利範圍第i項所述之 其中嗲密老+ 、體感測器製造方 其中心封膠係由該空隙進行點 方去， 佈於該感測晶片之該主動面、該=膠係流 該開口之該環壁及該空…密封=環壁、 -種氣體感測器結構，其係包含： 凸機。 -承載器，其係具有一上表面、 上表面及該下表面之開 、一貫穿該 囬心開口，该開口係具有辟. 一感測W ’其係覆晶接合於該承栽器之該上=面， 片係具有一主動面、一背面、複數個金凸塊 及 &又置於為主動面之威測、货_ ^ 膜，該承載器之該開口 係顯露該感測薄膜； —密封膠’其㈣成於㈣測晶片之該主動面及該開 口之該環壁以密封該些金凸&，並顯露出該感測薄 膜’ «封膠係具有m該頂面係位於該主動面 與該下表面之間；以及 一主機板，其係設置於該承載器之該下表面，該主機 板係具有一窗口以顯露該感測薄膜。 、如申請專利範圍第1 2項所述之氣體感測器結構，其 中該感測薄臈係具有一第一寬度，該開口係具有一第 二寬度，該第二寬度係大於該第一寬度。 、如申請專利範圍第13項所述之氣體感測器結構，其 中形成於該開口之該環壁之該密封膠係具有一第一 侧壁及一第二侧壁’該第一侧壁及該第二側壁之間係 14 14 f201015644 具有一間距，該間距係介於該第一寬度與該第二寬度 之間。 15 16 17 如申凊專利範圍第12項所述之氣體感測器結構，其 中該感測晶片係另具有一連接該主動面及該背面之 側面，該密封膠係形成於該側面。 如申請專利範圍第12項所述之氣體感測器結構，其 中忒承載器係另具有複數個第一連接墊及複數個第 二連接墊，該些第一連接墊係位於該上表面，該些第 二連接墊係位於該下表面。 18 19 ' ❹ .如申请專利範圍第16項所述之氣體感測器結構，其 中該些金凸塊係電性連接至該些第一連接墊。 如申請專利範圍第12項所述之氣體感測器結構，立 中該承載器係選自於Βτ樹脂基板（出嶋⑽^ TnaZlne substrate)或薄膜基板。 如申請專利範圍第16項所述之氣體感測器結構，其 另包含有複數個銲球，該些銲球係設置於該 該些第二連接㈣電性連接該承載器與該主機板 15201015644, the scope of the patent application: A method for manufacturing a gas sensor, comprising: providing a sensing chip, the sensing chip having an active surface, a plurality of gold bumps, and a feeling of being disposed on the active surface Measured = a protective layer covering the sensing film, the protective layer wall and a exposed surface; the blister 3 is flip-chip bonded to the sensing wafer on a carrier having an upper surface and a lower surface And the opening and the bottom opening, the opening has a ring wall 'the sensing crystal=the transfer machine 4 M ^ the beech edge layer is in the opening and the exposed surface is convex The lower surface of the container, wherein the ring wall of the opening and the protective layer have a gap therebetween; the dot coating forms a sealant on the active surface of the sensing wafer, the cleaning layer The outer ring wall, the ring wall of the opening, and the gold gap in the gap, the sealant reveals the exposed surface of the protective layer; the protective layer is removed to expose the sensing film; And setting a motherboard on the lower surface of the carrier, the Based board having a window to expose the sensing thin Ge. 2. The method of manufacturing a gas sensor according to claim 1, wherein the sealant has a top surface from the top surface to the active surface meter of the sensing wafer and the right one is The active surface of the protective layer to the active surface of the sensing wafer has a second height, the second height being greater than the first height. The gas sensor manufacturing method of claim 1, wherein the sensing film has a first width, the opening having a second width, the second width being greater than the first width. 4. The method of manufacturing a gas sensor according to claim 3, wherein the sealant formed on the ring wall of the opening has a first side wall and a second side wall, the first side wall and the The second sidewall has a spacing between the first width and the second width. The gas sensor manufacturing method of claim 3, wherein the protective layer has a third width, the third width being greater than the first width. 6. The method of manufacturing a gas sensor according to claim 2, wherein the sensing chip further has a side connecting the active surface and the back surface, and the sealant is formed on the side. 7. The method of manufacturing a gas sensor according to claim 2, wherein the carrier is selected from a BT resin substrate (Bismaleimide D Triazine substrate) or a film substrate. 8. The method of manufacturing a gas sensor according to claim 2, wherein the 忒 carrier has a plurality of first connection pads and a plurality of second connection pads, wherein the first connection pads are located thereon The surface, the second connecting ties are located on the lower surface. 9. The method of manufacturing a gas sensor according to claim 8, wherein the gold bumps are electrically connected to the first port. 10. The method of manufacturing a gas sensor according to claim 8, further comprising: setting a plurality of solder balls to the second of the carrier 13 201015644 11 ' 12, Ο ❹ 13 疋 疋The carrier and the host are as described in claim i, wherein the central sealant of the body sensor is centered by the gap, and the active is disposed on the sensing chip. The surface, the ring wall of the opening and the air... sealing = ring wall, a gas sensor structure, comprising: a convex machine. a carrier having an upper surface, an upper surface, and an opening of the lower surface, the opening being through the central opening, the opening being provided with a sensing W 'the flip-chip bonding to the carrier The upper surface, the film has an active surface, a back surface, a plurality of gold bumps, and a film placed on the active surface, the opening of the carrier reveals the sensing film; - the sealant's (4) is formed in (4) the active surface of the wafer and the ring wall of the opening to seal the gold bumps & and reveal the sensing film 'The sealant has m top surface Between the active surface and the lower surface; and a motherboard disposed on the lower surface of the carrier, the motherboard having a window to expose the sensing film. The gas sensor structure of claim 12, wherein the sensing thin strip has a first width, the opening has a second width, and the second width is greater than the first width . The gas sensor structure of claim 13, wherein the sealant formed on the ring wall of the opening has a first side wall and a second side wall 'the first side wall and The second sidewall between the 14 14 f201015644 has a pitch between the first width and the second width. The gas sensor structure of claim 12, wherein the sensing wafer further has a side connecting the active surface and the back surface, and the sealant is formed on the side. The gas sensor structure of claim 12, wherein the 忒 carrier further has a plurality of first connection pads and a plurality of second connection pads, wherein the first connection pads are located on the upper surface, Some of the second connection pads are located on the lower surface. The gas sensor structure of claim 16, wherein the gold bumps are electrically connected to the first connection pads. The gas sensor structure according to claim 12, wherein the carrier is selected from the group consisting of a ruthenium resin substrate (TenZlne substrate) or a film substrate. The gas sensor structure of claim 16 further comprising a plurality of solder balls, wherein the solder balls are disposed on the second connection (four) to electrically connect the carrier and the motherboard 15
TW097139621A 2008-10-15 2008-10-15 Method for manufacturing gas sensor and structure thereof TWI372428B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI674653B (en) * 2017-04-19 2019-10-11 國立交通大學 Gas sensor package structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI674653B (en) * 2017-04-19 2019-10-11 國立交通大學 Gas sensor package structure

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