TW201013775A - Method and apparatus for etching silicon-containing film - Google Patents

Method and apparatus for etching silicon-containing film Download PDF

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TW201013775A
TW201013775A TW098107473A TW98107473A TW201013775A TW 201013775 A TW201013775 A TW 201013775A TW 098107473 A TW098107473 A TW 098107473A TW 98107473 A TW98107473 A TW 98107473A TW 201013775 A TW201013775 A TW 201013775A
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flow rate
gas
fluorine
etching
gas supply
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TW098107473A
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Chinese (zh)
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TWI386999B (en
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Shunsuke Kunugi
Takashi Satoh
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Sekisui Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Abstract

Disclosed are a method and an apparatus for etching a silicon-containing film such as a silicon film or a silicon oxide film at a high rate without leaving residues, while suppressing etching of a base film. A silicon-containing film (93) on a base film (92) is etched by bringing a process gas, which contains a fluorine-based reaction component and an oxidizing reaction component, into contact with an object (90) to be processed. The flow rate of the process gas on the object (90) to be processed is changed by a flow rate-regulating means (60) in accordance with the progress of the etching. Preferably, the gas flow rate is changed by regulating the amount of the process gas flow. More preferably, the amount of the process gas flow is regulated by mixing a flow rate-regulating gas into a process gas supply system (10) or by stopping the mixing.

Description

201013775 六、發明說明： 【發明所屬之技術領域】 本發明係關於_種非晶矽戋顏 / a軋化矽等之含石夕原子 膜的蝕刻方法及裝置。 ^3 7201013775 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to an etching method and apparatus for a cerium-containing atomic film of an amorphous enamel/a rolled ruthenium or the like. ^3 7

【先前技徜J 對於氧化矽膜可利用包含氟 _ 氫等之氟系反應氣體之處 理氣體進行㈣。料非以等A致由❹子構成之石夕 媒，可利用混合了氟化氫等之氣系反應氣體與臭氧等之氧 化性反應氣體的處理氣體進行姓刻。 例如，專利文獻卜2中記載有：利用臭氧使晶圓表面之 石夕氧化而生絲切⑷），之後❹氫氟酸進㈣刻。氫 氟酸係使用氫氟酸蒸汽發生器使其蒸發，將氫氟酸蒸汽引 導至晶圓表面。 專利文獻3中記載有：在CF4等之說系氣體中引起大氣壓 附近放電而生成hf、C0F4，進而瞻2與混合於队等中 之水反應而生成HF(式2) ’利用由此所獲得之HF來钱刻氧 化矽（式3)。[Prior Art J] The ruthenium oxide film can be obtained by using a fluorine-based reaction gas containing fluorine-hydrogen or the like (IV). It is possible to carry out the surging process by using a gas for the reaction of a gas-based reaction gas such as hydrogen fluoride with an oxidizing reaction gas such as ozone. For example, Patent Document 2 discloses that ozone is oxidized by ozone on the surface of the wafer to be cut (4), and then hydrofluoric acid is introduced into (four). Hydrofluoric acid is vaporized using a hydrofluoric acid vapor generator to direct hydrofluoric acid vapor to the wafer surface. In Patent Document 3, it is described that in the gas of CF4 or the like, discharge is caused in the vicinity of the atmospheric pressure to generate hf and COF4, and further, the water is reacted with the water mixed in the team to generate HF (Formula 2). The HF is used to engrave bismuth oxide (Formula 3).

Si+2〇3-^Si〇2+2〇2 (式” COF2+H2〇->c〇2+2HF (式 2) Si02+4HF+H20->SiF4+3H20 (式 3) 專利文獻4中記載有：利用大氣壓電漿放電而由加濕之 CF4獲得HF(式4) ’向其中添加〇3 ’以此來蝕刻氧化矽。 CF4+2H20—>4HF+C〇2 (式 4) 專利文獻5中記載有：使cf4與02進行大氣壓放電而獲得 139030.doc 201013775 自由基，將該自由基自電漿空間引導至溫度為2(TC或 100C之基板上，以此來蝕刻單晶矽。 專利文獻6中記载有：使加濕(：174或乾燥Cf4進行大氣壓 放電’’在基板溫度為90°C下蝕刻晶態矽。 專利文獻7中記載有下述方法：在低壓腔室内蝕刻矽 時，在基礎膜露出之同時或即將露出之前，將蝕刻氣體之 成分置換成對底層之選擇比較高之氣體種類後進行過度蝕 刻。 [專利文獻1]曰本專利特開2003-264160號公報 [專利文獻2]曰本專利特開2004-55753號公報 [專利文獻3]曰本專利特開2〇〇〇_585〇8號公報 [專利文獻4]曰本專利特開2002-270575號公報 [專利文獻5]曰本專利特開平〇4_358〇76號公報 [專利文獻6]日本專利特開20004 64559號公報 [專利文獻7]曰本專利特開2002-343798號公報 【發明内容】 [發明所欲解決之問題] 在對非晶矽或氧化矽等之含矽膜進行蝕刻時，添加於用 以生成氟系反應成分之氟系原料中之水（參照式4)或由钱刻 反應所生成之水（參照式3)會附著於含矽膜之表面且冷凝。 存在冷凝水之層之部位的钱刻反應受到阻礙。因此，無法 均一地蝕刻含矽膜整體，含矽膜之一部分容易呈斑點狀殘 存。 亦考慮每當含矽膜之表面附著有水分時即進行乾燥步驟 139030.doc 201013775 c 而將水分去除’但處理時間會延長，並不實用。 若充分進行過㈣刻’則可將呈斑點狀殘存之含石夕膜餘 刻去除，但基礎膜將受到所需程度以上之蝕刻。 亦考慮到根據基礎膜之成分等之不同，有時當水分較多 時，含矽膜相對於基礎膜之選擇比增大。 [解決問題之技術手段] ^ 、為了解決上述課題，本發明提供一種含矽膜之蝕刻方 • 法，其係對在基礎膜上積層有含矽膜之被處理物進行蝕刻 者’其特徵.在於： 使包含氟系反應成分之處理氣體與上述被處理物相接 觸，並且， 根據蝕刻之進展而改變上述處理氣體在被處理物上之流 速。 蝕刻時會生成水（參照式3)。又，有時處理氣體中亦包 含水分（參照式4)。此處，當增大處理氣體在被處理物上之 • 流速時，上述水分容易由於處理氣體之勢力而自被處理物 之表面飛散開去。因此，可藉由調節處理氣體之流速，而 調節附著於被處理物表面之水分的量。於不影響基礎膜之 ， 階段，可以達到使含矽膜之蝕刻速率良好之水分量的方 ' 式’來設定處理氣體之流速。藉此，可縮短處理時間。於 會影響基礎膜之階段，可以達到使含矽膜相對於基礎膜之 钱刻選擇比較大之水分量的方式，來設定處理氣體之流 速。藉此，可抑制基礎膜之蝕刻，且可防止含碎膜呈斑點 狀殘存。 139030.doc 201013775 作為構成上述切狀切物，可料：％(si)、氧化 矽(si〇2)、碳化妙（Sic)、碳氧化石夕（si〇c)、碳氮化石夕 (SiCN)等。矽（Si)可為非晶矽，亦可為多晶矽亦可為單 晶石夕。於上述切料仲丨）、碳切（⑽）、碳氧化石夕 (織）、碳氮切（SiCN)等之情形時，較好的是上述處理 氣體進-步包含氧化性反應成分。氧化性反應成分係對石夕 等之物質具有氧化作用之氣體成分。藉此，可將含石夕膜氧 化（參照式1}，其後，可以與氧化石夕相同之方式進行敍刻 (參照式3)。碳切（Sic)或碳氧化伴咖）可藉由加熱而 轉換切（Si)，其後，可以與石夕相同之方式進行姓刻（參照 式1、式3)。作為氧化性反應成分，可列舉：〇3、〇自由 基、h2〇2、〇2、N〇2、n2〇等，較好者可列舉〇3。 基礎膜由與作為飯刻對象之切膜不同之成分構成即 σ 〃亦可為3 ♦物。於作為敍刻對象之含⑦臈為碎⑽ 之情形時，基礎臈例如為氧切（Si〇2)、氮化邦叫等。 於作為㈣對象之切膜為氧切（Si〇2)之情料，基礎 膜例如為氮切（SiN)等。於作為㈣對象之切膜為碳 化石夕（slC)或碳氧切⑽c)之情料，基礎膜例如為氮化 石夕（SiN)、氧化矽（Si〇2)等。 較好的是，隨著_之進行㈣段性地改變上述流速。 藉此，可使流速之控制變得容易。所謂「階段性地」，係 指上述流速之變化不連續或者呈階梯狀。 亦可隨著㈣之進行而連續地改變上述流速。 使流速改變至少！次即可。改變之時間點較好的是預先 139030.doc 201013775 進行實驗加以確定。 較好的是，隨著蝕刻之進行而增大上述流速。Si+2〇3-^Si〇2+2〇2 (formula) COF2+H2〇->c〇2+2HF (Formula 2) Si02+4HF+H20->SiF4+3H20 (Formula 3) Patent Literature In 4, it is described that HF (formula 4) is obtained from the humidified CF4 by the discharge of the atmospheric piezoelectric slurry, and yttrium oxide is added thereto to thereby etch the ruthenium oxide. CF4+2H20->4HF+C〇2 (Formula 4 Patent Document 5 discloses that cf4 and 02 are subjected to atmospheric pressure discharge to obtain 139030.doc 201013775 radical, and the radical is guided from the plasma space to a substrate having a temperature of 2 (TC or 100 C) to etch the single sheet. In the patent document 6, it is described that humidification (: 174 or dry Cf4 is performed at atmospheric pressure discharge '', and the crystalline state is etched at a substrate temperature of 90 ° C. Patent Document 7 describes the following method: When the ruthenium is etched in the chamber, the composition of the etching gas is replaced with a gas type having a relatively high selection of the underlayer, and the etched gas is over-etched after the base film is exposed or is about to be exposed. [Patent Document 1] Japanese Patent Laid-Open No. 2003- [Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-55753 [Patent Document 3] Patent Application No. 2〇〇〇5855 [Patent Document 4] Japanese Patent Laid-Open No. Hei. No. 2000-64575 (Patent Document 7). [Problems to be Solved by the Invention] When etching a ruthenium-containing film such as amorphous ruthenium or ruthenium oxide, it is added to fluorine which is used to form a fluorine-based reaction component. The water in the raw material (refer to Formula 4) or the water generated by the reaction (see Formula 3) adheres to the surface of the ruthenium-containing membrane and condenses. The reaction of the portion where the layer of condensed water exists is hindered. The entire ruthenium-containing film cannot be uniformly etched, and a part of the ruthenium-containing film is likely to remain in a spot shape. It is also considered to perform a drying step 139030.doc 201013775 c every time when moisture is attached to the surface of the ruthenium-containing film, but the moisture is removed. The time will be prolonged and not practical. If the (four) engraving is fully carried out, the residual film containing the speckled film can be removed, but the base film will be etched to the extent required. Composition, etc. Differently, when the moisture is large, the selection ratio of the ruthenium-containing film to the base film is increased. [Technical means for solving the problem] ^ In order to solve the above problems, the present invention provides an etching method including a ruthenium film. It is characterized in that an object to be processed by laminating a film containing a ruthenium film on a base film is characterized in that a processing gas containing a fluorine-based reaction component is brought into contact with the object to be treated, and is changed according to progress of etching. The flow rate of the above treatment gas on the treated object. Water is generated during etching (see Equation 3). Further, the processing gas may also contain moisture (see Formula 4). Here, when the flow rate of the processing gas on the workpiece is increased, the above-mentioned moisture is likely to be scattered from the surface of the workpiece due to the force of the processing gas. Therefore, the amount of moisture adhering to the surface of the object to be treated can be adjusted by adjusting the flow rate of the process gas. At the stage where the base film is not affected, the flow rate of the processing gas can be set by the square of the water content which makes the etching rate of the ruthenium film good. Thereby, the processing time can be shortened. At the stage where the base film is affected, the flow rate of the processing gas can be set by selecting a relatively large amount of water for the ruthenium film relative to the base film. Thereby, the etching of the base film can be suppressed, and the chip-containing film can be prevented from remaining in a speckle form. 139030.doc 201013775 As the above-mentioned cut shape, it is expected that: %(si), yttrium oxide (si〇2), carbonized (Sic), carbon oxidized stone (si〇c), carbonitride (Xicon) )Wait. The bismuth (Si) may be amorphous bismuth, or may be polycrystalline germanium or monocrystalline. In the case of the above-mentioned cut material, carbon cut ((10)), carbon oxidized stone, carbonitride (SiCN), etc., it is preferred that the above-mentioned treatment gas further contains an oxidizing reaction component. The oxidizing reaction component is a gas component which oxidizes a substance such as Shi Xi. Thereby, the stone-containing film can be oxidized (refer to Formula 1}, and thereafter, it can be described in the same manner as the oxidized stone eve (refer to Formula 3). Carbon cut (Sic) or carbon oxide can be used by The cut (Si) is switched by heating, and thereafter, the surname can be performed in the same manner as Shi Xi (refer to Formula 1, Formula 3). Examples of the oxidative reaction component include hydrazine 3, hydrazine free radical, h2 〇 2, hydrazine 2, N 〇 2, and n 2 fluorene. Preferred examples thereof include hydrazine 3. The base film is composed of a component different from the film which is the object of the rice cooking, that is, σ 〃 can also be 3 ♦. In the case where the inclusion of 7臈 is a fragmentation (10), the basic enthalpy is, for example, oxygen chopping (Si〇2), nitriding state, and the like. The film which is the object of (4) is oxygen-cut (Si〇2), and the base film is, for example, nitrogen-cut (SiN). The film which is the object of (4) is carbon stone (slC) or carbon-oxygen (10) c), and the base film is, for example, SiN or yttrium oxide. Preferably, the above flow rate is changed stepwise as the _ progresses. Thereby, the control of the flow rate can be facilitated. By "staged" is meant that the change in flow rate described above is discontinuous or stepped. The above flow rate can also be continuously changed as (4) proceeds. Change the flow rate at least! You can do it twice. The time of change is better determined by experimenting in advance 139030.doc 201013775. Preferably, the flow rate is increased as the etching progresses.

藉此，於不影響基礎膜之階段，可使處理氣體之流速相 對較小，從而使附著於被處理物表面之水分量足夠多。由 此，可提咼含矽膜之蝕刻速率。當蝕刻進行至會影響基礎 膜之階段時’則可藉由相對增大處理氣體之流速，而使水 分自被處理物之表面飛散’減少被處理物表面之水分附著 量。於基礎膜由氮切等構成之情料，基礎膜之蚀刻速 率隨著被處理物表面之水分附著量之減少而降低的程度大 於由料所構成之切膜。因此，可增大切助對於基 礎膜之㈣選擇比。藉此，可抑制基礎膜之過度㈣，且 可確實地防止出現含矽膜之斑點狀殘渣。 較好的是隨著_之進行㈣段性地增大上述流速。藉 此，可使流速之控制變得容易。 亦可隨著㈣之進行而使上述流速連續地遞增。 根據基礎膜之成分等之不同，亦可階段性地或連續地降 低上述流速，以隨著蝕刻之進行而婵大人功描4獻 膜之選擇比。 細而增大否石夕膜相對於基礎 較好的是，於對上述切膜之應㈣部分之大部分（』 大致整體）進行蝕刻期間（以下稱作「m I 4 冉乍第1蝕刻步驟」）μ 上述/瓜速相對較小，於 诚笛丨黏幻止 ^上這3矽膜之應蝕刻部分中的」 这第1蝕刻步驟後所殘存 * 丨本 刀進仃蝕刻期間（以下稱个 ㈣虫刻步驟」），使上㈣速㈣較大。 藉此，於對切膜之應敍刻部分之大部分進行钱刻時， 139030.doc 201013775 y形成水分易於附著於被處理物表面之狀態，可確實地提 尚蝕刻速率。因此，可確實地縮短處理時間。之後，對殘 存之3碎膜進仃㈣時，可使水分自被處理物表面飛散， 減少被處理物表面之水分附著量。因此，於基礎膜由氮化 石夕等構成之情形時，可增大切膜相對於基礎膜之選擇 比。藉此，可抑制基礎膜之過度蝕刻，且可確實地防止出 現含矽膜之斑點狀殘渣。 此處所5胃「大部分J ’係指含矽膜之應蝕刻部分中之 例如50〜99.9%，較好的是7〇〜99 9%，更好的是 80〜99.9%，進而更好的是9〇〜99 9%。所謂「大致整體」， 係指上述「大部分」之上限部分，係指含矽膜之應蝕刻部 分中之例如90〜99.90/β。 亦可在上述第1蝕刻步驟中階段性地增大上述流速，使 上述第2蝕刻步驟中之上述流速大於上述第丨蝕刻步驟之最 末階段。 藉此，可更加確實地抑制基礎膜之過度蝕刻，且可確實 地防止出現含矽臈之斑點狀殘渣。 ' 較好的是，藉由改變上述處理氣體之流量，而改變上述 流速。 藉此’可簡便且確實地使流速改變。 較好的是，隨著蝕刻之進行而增大上述處理氣體之流 量。較好的是，於第1蝕刻步驟中，使處理氣體之流量相 對較小，於第2蝕刻步驟中，使處理氣體之流量相對較 大0 139030.doc 201013775 較好的A，藉由於上述處理氣體中混合流速調節用氣體 或者停止混合，而改變處理氣體之流量。 藉此，可使得無論處理氣體之流量如何變化，處理氣體 中之反應成分的流量均不會產生大幅度變動，從而可抑制 含矽膜之蝕刻速率變動。 較好的是，隨著蝕刻之進行而增大上述流速調節用氣體 之流量。較好的是於第1蝕刻步驟中，使流速調節用氣體 • 之流量相對較小，於第2蝕刻步驟中，使流速調節用氣體 之流量相對較大。 藉由上述混合，上述流速調節用氣體成為上述處理氣體 之一成分。 上述氟系反應成分可藉由使包含氟系原料且添加有1^〇 之氟系原料氣體通過大氣壓附近之電漿空間而生成。 亦可在較上述電漿空間之上游側，於上述氟系原料氣體 中混合流速調節用氣體或者停止混合，利用該流速調節用 φ 氣體之流量來調節上述流速。 由於氟系原料之流量可維持為固定，因而可抑制氟系反 應成分之生成量變動，從而可抑制含矽膜之蝕刻速率變 , 動。於此情形時，流速調節用氣體可為氟系原料之稀釋氣 • 體’亦可為稀釋氣體以外之氣體。 較好的是’在較上述電漿空間之下游側，於上述處理氣 體中混合流速調節用氣體或者停止混合’利用該流速調節 用氣體之流量來調節上述流速。 於此情形時，無論上述流速如何變化，導入至電漿空間 139030.doc 201013775 中之氣體之各成分的流量比及流量均可維持為固定。藉 此’可使電襞空間中之放電較為穩定。因此，可更加確實 地抑制含矽膜之姓刻速率變動。 再者’於第1姓刻步驟中’流速調節用氣體之流量亦可 為零。 本發明之含矽膜之蝕刻裝置係對在基礎膜上積層有含矽 膜之被處理物進行蝕刻者，其特徵在於包括： 處理氣體供給系統，其對上述被處理物供給包含氣系反 應成分之處理氣體；以及 流速調節機構，其根據蝕刻之進展而改變上述處理氣體 在被處理物上之流速。 根據該特徵，藉由調節上述流速，可調節被處理物表面 之水分附著量。藉此，於不影響基礎媒之階段，可進行調 節以使含矽膜之蝕刻速率良好。因此，可縮短處理時間。 於會影響基礎膜之階段，可進行調節以使含矽膜相對於基 礎膜之選擇比良好。因此，可抑制基礎膜之蝕刻，且可確 實地防止出現含石夕膜之斑點狀殘渣。 較好的是，上述流速調節機構隨著蝕刻之進行而階段性 地改變上述流速。藉此，可使流速調節機構之控制變得容 易。 上述流速調節機構亦可隨著蝕刻之進行而連續地改變上 述流速。 較好的是，上述流速調節機構隨著蝕刻之進行而增大上 述流速。 139030.doc -10· 201013775 藉此’於不影響基礎膜之階段’可使處理氣體之流速相 對較小.，使附著於被處理物表面之水分量增多，從而提高 含石夕膜之蚀刻速率。因此，可確實地縮短處理時間。當钱 刻進行至會影響基礎膜之階段，則可藉由使處理氣體之流 速相對較大’而使水分自被處理物表面飛散，從而減少被 處理物表面之水分附著量。因此，於基礎膜由氮化矽等構 成之情形時，可增大含矽膜相對於基礎膜之選擇比。藉 • 此，可抑制基膜之過度蝕刻，且可確實地防止出現含矽膜 之斑點狀殘渣。 較好的是，上述流速調節機構隨著蝕刻之進行而階段性 地增大上述流速。藉此，可使流速調節機構之控制變得容 易。 上述流速調節機構亦可隨著蝕刻之進行而使上述流速連 續地遞增。 根據基礎膜之成分等之不同，上述流速調節機構亦可階 • 段性地或連續地降低上述流速，以隨著姓刻之進行而而增 大含石夕膜相對於基礎膜之選擇比。 較好的是，直至上述含石夕膜之隸刻部分之大部分被姓 ' 料止’上述流速調«構使上述流速相對較小，钱刻殘 . 存之含矽膜時，使上述流速相對較大。 藉此，對含石夕膜之應钱刻部分之大部分進行钮刻時，可 =被處理物表面之水分附著量’從而可確實地提高姓刻 、率:因此，可確實地縮短處料i其後，㈣存之含 矽琪進订飯刻時，可使水分自被處理物表面飛散，減少被 139030.doc 201013775 處理物表面之水分附著量。因此，於基礎膜由氮化石夕等構 成之情形時，可增大含矽膜相對於基礎膜之選擇比。藉 此可抑制基膜之過度蝕刻，且可確實地防止出現含矽獏 之斑點狀殘渣。 、 上述流逮調節機構較好的是對上述處理氣體之流量進行 調節之流量調節機構。 藉此，可使流速調節機構之結構較為簡單，且可確實地 改變流速。 較好的是，上述流速調節機構（流量調節機構）隨著蝕刻 之進行而增大上述處理氣體之流量。 較好的是，直至上述含矽膜之應蝕刻部分之大部分被蝕 刻為止’上述流速調節機構（流量調節機構）使上述處理氣 體之流量相對較小，蝕刻殘存之含矽膜時，使上述處理氣 體之流量相對較大。上述流速調節機構亦可隨著蝕刻之進 行而降低上述處理氣體之流量。 較好的是上述處理氣體供給系統包括：電漿生成部，其 形成大氣壓附近之電漿空間；以及原料供給管線，其將形 成上述氟系反應成分的包含氟系原料且添加有出〇之氟系 原料氣體’導入至上述電漿空間中。 上述流速調節機構亦可於上述原料供給管線中混合流速 調節用氣體或者停止混合，利用該流速調節用氣體之流量 來調節上述流速。 藉此，氟系原料之流量可維持為固定量，因而可抑制氟 系反應成分之生成量變動’從而可抑制含矽膜之蝕刻速率 139030.doc -12· 201013775 變動。 上述流速調節用氣體構成上述處理氣體之一成分。 較好的是，上述流速調節部於較上述電漿空間位於下游 側之處理氣體供給系統中，混合流速調節用氣體或者停止 混合，利用該流速調節用氣體之流量來調節上述流速。 藉此，無論上述流速如何變化，導入至電漿空間中之氣 體之各成分的流量比及流量均可維持為固定。因此，可使 電漿空間中之放電較為穩定。因此，可更加確實地抑制含 梦膜之银刻速率變動。 本發明之含矽膜之蝕刻裝置係對在基礎膜上積層有含矽 膜之被處理物進行蝕刻者，其另一特徵在於包括： 複數個處理氣體供給系統，其等喷出包含氟系反應成分 之處理氣體；以及 切換機構，其根據蝕刻之進展，選擇性地對將處理氣體 吹附於上述被處理物上之處理氣體供給系統進行切換；並 且， 來自上述複數個處理氣體供給系統中的至少2個處理氣 體供給系統之處理氣體吹附於被處理物上時的在被處理物 上之流速互不相同。 根據該特徵，可藉由選擇上述處理氣體供給系統，而對 吹附於被處理物上之處理氣體在被處理物上之流速進行調 節。利用該流速之差異，可調節被處理物表面之水分附著 量。藉此，於不影響基礎膜之階段，可進行調節以使含矽 膜之蝕刻速率良好。因此，可縮短處理時間。於會影響基 139030.doc -13- 201013775 礎膜之階段，可進行調節以使含矽膜相對於基礎膜之選擇 比良好。因此，可抑制基礎膜之蝕刻，且可確實地防止出 現含矽膜之斑點狀殘渣。 較好的是，上述切換機構隨著蝕刻之進行，選擇上述流 速相對較大之處理氣體供給系統。 藉此，於不影響基礎膜之階段，可對被處理物吹附來自 流速較小之供給系統之處理氣體，由此可增大被處理物表 面之水分附著量，可確實地提高含矽膜之蝕刻速率◎因 此，可確實地縮短處理時間，當蝕刻進行至會影響基礎膜 之階段時，可對被處理物吹附來自流速較大之供給系統之 處理氣體，由此可使水分自被處理物表面飛散，從而減少 被處理物表面之水分附著量。因此，於基礎膜由氮化石夕等 構成之情形時，可增大含矽膜相對於基礎膜之選擇比。藉 此，可抑制基膜之過度蚀刻，i可確冑地防止出現含石夕膜 之斑點狀殘渣。 、 較好的是，直至上述切膜之應㈣部分之大部分被蚀 刻為止，上述切換機構選擇上述流速相對較小之處理㈣ 供給系統，姓刻殘存之含石夕膜時，選擇上述流速相對較大 之處理氣體供給系統。藉此，在對含石夕膜之應姓刻部分之 =部分進㈣刻時，可增大被處理物表面之水分附著量， 從而可確實地提高餘刻速率。因此，可確實地縮短處理時 間。其後，對殘存之含石夕膜進行姓刻時，可使水分自被處 理物表面飛散，減少被處理物表面之水分附著量。因此， 於基礎膜由氮化石夕等構成之情形時，可增大含石夕膜相對於 139030.doc 201013775 基礎膜之選擇比。藉此，可抑制基礎膜之過度蝕刻，且可 確實地防止出現含矽膜之斑點狀殘渣。 較好的是’上述複數個處理氣體供給系統中，至少2個 處理氣體供給系統之處理氣體的流量互不相同。 藉此’可藉由切換處理氣體供給系統，改變噴附於被處 理物上之處理氣體之流量，而改變處理氣體在被處理物上 ' 之流速。較好的是，上述切換機構隨著蝕刻之進行，選擇 φ 處理氣體之流量相對較大之處理氣體供給系統。上述切換Thereby, the flow rate of the processing gas can be made relatively small at a stage where the base film is not affected, so that the amount of moisture adhering to the surface of the object to be treated is sufficiently large. Thereby, the etching rate of the ruthenium containing film can be improved. When the etching proceeds to a stage where the base film is affected, the water can be scattered from the surface of the object to be treated by relatively increasing the flow rate of the process gas to reduce the amount of moisture adhering to the surface of the object to be treated. In the case where the base film is formed by nitrogen cutting or the like, the etching rate of the base film is lowered more than the amount of moisture adhering to the surface of the object to be processed, which is larger than the film formed by the material. Therefore, the (4) selection ratio of the assist to the base film can be increased. Thereby, excessive (4) of the base film can be suppressed, and the spot-like residue containing the ruthenium film can be surely prevented from occurring. It is preferred to increase the above flow rate stepwise as the _ proceeds. Thereby, the control of the flow rate can be facilitated. The above flow rate may also be continuously increased as (4) proceeds. Depending on the composition of the base film or the like, the flow rate may be lowered stepwise or continuously to increase the selection ratio of the film as the etching progresses. It is preferable to increase the thickness of the stone film with respect to the base, and to perform etching during the etching of most of the portion (4) of the film (hereinafter referred to as "m I 4 冉乍 first etching step". ") The above / melon speed is relatively small, in the etched portion of the 3 矽 film on the 丨 丨 丨 」 」 」 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这 这(4) Insect step"), making the upper (four) speed (four) larger. Therefore, when most of the portion of the cut film is to be engraved, 139030.doc 201013775 y forms a state in which moisture easily adheres to the surface of the object to be treated, and the etching rate can be surely improved. Therefore, the processing time can be surely shortened. Then, when the remaining 3 pieces of the film enter the crucible (4), the water can be scattered from the surface of the object to be treated, and the amount of moisture adhering to the surface of the object to be treated can be reduced. Therefore, in the case where the base film is composed of nitride or the like, the selection ratio of the slit film to the base film can be increased. Thereby, over-etching of the base film can be suppressed, and the spot-like residue containing the ruthenium film can be surely prevented. Here, the "most of the J' refers to, for example, 50 to 99.9%, preferably 7 to 99.9%, more preferably 80 to 99.9%, and more preferably in the portion to be etched containing the ruthenium film. It is 9〇~99 9%. The term “substantially integral” means the upper part of the above “majority” and refers to, for example, 90 to 99.90/β in the portion to be etched containing the ruthenium film. The flow rate may be increased stepwise in the first etching step so that the flow rate in the second etching step is greater than the final stage of the second etching step. Thereby, over-etching of the base film can be more reliably suppressed, and the occurrence of spot-like residue containing ruthenium can be surely prevented. It is preferable to change the above flow rate by changing the flow rate of the above processing gas. By this, the flow rate can be easily and surely changed. Preferably, the flow rate of the processing gas is increased as the etching progresses. Preferably, in the first etching step, the flow rate of the processing gas is relatively small, and in the second etching step, the flow rate of the processing gas is relatively large. A 139030.doc 201013775 is better A, by the above treatment The flow rate adjusting gas is mixed in the gas or the mixing is stopped, and the flow rate of the processing gas is changed. Thereby, regardless of the change in the flow rate of the processing gas, the flow rate of the reaction component in the processing gas does not largely vary, and the variation in the etching rate of the ruthenium-containing film can be suppressed. Preferably, the flow rate of the flow rate adjusting gas is increased as the etching progresses. It is preferable that the flow rate of the gas for adjusting the flow rate is relatively small in the first etching step, and the flow rate of the gas for adjusting the flow rate is relatively large in the second etching step. By the above mixing, the gas for adjusting the flow rate becomes a component of the processing gas. The fluorine-based reaction component can be produced by passing a fluorine-based raw material gas containing a fluorine-based raw material and adding 1 〇 to a plasma space in the vicinity of atmospheric pressure. Further, the flow rate adjusting gas may be mixed or stopped in the fluorine-based material gas on the upstream side of the plasma space, and the flow rate may be adjusted by the flow rate of the flow rate adjusting φ gas. Since the flow rate of the fluorine-based raw material can be maintained constant, fluctuations in the amount of formation of the fluorine-based reaction component can be suppressed, and the etching rate of the ruthenium-containing film can be suppressed from changing. In this case, the gas for adjusting the flow rate may be a diluent gas of the fluorine-based raw material, or may be a gas other than the diluent gas. Preferably, the flow rate adjusting gas is mixed or stopped in the processing gas on the downstream side of the plasma space. The flow rate is adjusted by the flow rate adjusting gas. In this case, regardless of the change in the flow rate, the flow ratio and flow rate of the components introduced into the plasma space 139030.doc 201013775 can be maintained constant. By this, the discharge in the electric power space can be stabilized. Therefore, it is possible to more reliably suppress the change in the rate of the surname containing the ruthenium film. Further, in the first engraving step, the flow rate of the gas for adjusting the flow rate may be zero. The ruthenium-containing etching apparatus of the present invention is an apparatus for etching a workpiece containing a ruthenium film on a base film, and is characterized by comprising: a processing gas supply system that supplies a gas-containing reaction component to the workpiece a processing gas; and a flow rate adjusting mechanism that changes a flow rate of the processing gas on the object to be processed according to the progress of the etching. According to this feature, by adjusting the above flow rate, the amount of moisture adhering to the surface of the object to be treated can be adjusted. Thereby, adjustment can be made so that the etching rate of the ruthenium-containing film is good without affecting the stage of the base medium. Therefore, the processing time can be shortened. At the stage where the base film is affected, adjustment can be made to make the selection ratio of the ruthenium-containing film to the base film good. Therefore, the etching of the base film can be suppressed, and the spot-like residue containing the stone film can be surely prevented from occurring. Preferably, the flow rate adjusting mechanism changes the flow rate stepwise as the etching progresses. Thereby, the control of the flow rate adjusting mechanism can be facilitated. The flow rate adjusting mechanism described above can also continuously change the flow rate as the etching progresses. Preferably, the flow rate adjusting mechanism increases the flow rate as the etching progresses. 139030.doc -10· 201013775 By using the 'stage without affecting the base film', the flow rate of the processing gas can be made relatively small, so that the amount of moisture attached to the surface of the treated object is increased, thereby increasing the etching rate of the stone-containing film. . Therefore, the processing time can be surely shortened. When the money is advanced to the stage where the base film is affected, the water can be scattered from the surface of the object to be treated by making the flow rate of the process gas relatively large, thereby reducing the amount of moisture adhering to the surface of the object to be treated. Therefore, in the case where the base film is composed of tantalum nitride or the like, the selection ratio of the ruthenium-containing film to the base film can be increased. By this, over-etching of the base film can be suppressed, and the speckle-like residue containing the ruthenium film can be surely prevented from occurring. Preferably, the flow rate adjusting mechanism gradually increases the flow rate as the etching progresses. Thereby, the control of the flow rate adjusting mechanism can be facilitated. The flow rate adjusting mechanism may continuously increase the flow rate as the etching progresses. Depending on the composition of the base film or the like, the flow rate adjusting mechanism may also reduce the flow rate stepwise or continuously to increase the selection ratio of the stone film to the base film as the last name progresses. Preferably, until the majority of the engraved portion of the above-mentioned stone-containing membrane is subjected to the above-mentioned flow rate adjustment, the flow rate is relatively small, and the money is impregnated. relatively bigger. In this way, when most of the parts of the engraved portion of the stone-containing film are subjected to the button engraving, the amount of moisture adhering to the surface of the object to be treated can be surely increased, and the rate of surname can be surely improved: therefore, the material can be surely shortened i. After that, (4) When the 矽 矽 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进 进Therefore, in the case where the base film is composed of nitrite or the like, the selection ratio of the ruthenium-containing film to the base film can be increased. Thereby, excessive etching of the base film can be suppressed, and the occurrence of speckle-like residue containing ruthenium can be surely prevented. Preferably, the flow catching adjustment mechanism is a flow rate adjusting mechanism that adjusts the flow rate of the processing gas. Thereby, the structure of the flow rate adjusting mechanism can be made simple, and the flow rate can be surely changed. Preferably, the flow rate adjusting mechanism (flow rate adjusting means) increases the flow rate of the processing gas as the etching progresses. Preferably, until the majority of the etched portion of the ruthenium-containing film is etched, the flow rate adjusting mechanism (flow rate adjusting mechanism) causes the flow rate of the processing gas to be relatively small, and when the remaining ruthenium-containing film is etched, The flow rate of the process gas is relatively large. The flow rate adjusting mechanism may also reduce the flow rate of the processing gas as the etching progresses. Preferably, the processing gas supply system includes a plasma generating unit that forms a plasma space near atmospheric pressure, and a raw material supply line that forms a fluorine-containing raw material containing the fluorine-based reaction component and is added with fluorine. The raw material gas 'is introduced into the above plasma space. The flow rate adjusting means may mix the flow rate adjusting gas or stop the mixing in the raw material supply line, and adjust the flow rate by the flow rate of the flow rate adjusting gas. Thereby, the flow rate of the fluorine-based raw material can be maintained at a fixed amount, so that the variation in the amount of formation of the fluorine-based reaction component can be suppressed, and the etching rate of the ruthenium-containing film can be suppressed from 139030.doc -12·201013775. The gas for adjusting the flow rate constitutes one of the components of the processing gas. Preferably, the flow rate adjusting unit mixes the flow rate adjusting gas or stops mixing in the processing gas supply system located on the downstream side of the plasma space, and adjusts the flow rate by the flow rate of the flow rate adjusting gas. Thereby, regardless of the change in the flow rate, the flow ratio and flow rate of each component of the gas introduced into the plasma space can be maintained constant. Therefore, the discharge in the plasma space can be made relatively stable. Therefore, it is possible to more reliably suppress the variation of the silver engraving rate of the dream film. The ruthenium-containing etching apparatus of the present invention is for etching an object to be treated having a ruthenium-containing film on a base film, and is further characterized by comprising: a plurality of processing gas supply systems, wherein the effluent contains a fluorine-based reaction a processing gas of the component; and a switching mechanism that selectively switches the processing gas supply system that blows the processing gas onto the processed object according to the progress of the etching; and, from the plurality of processing gas supply systems The flow rates on the workpiece when the process gases of at least two process gas supply systems are blown onto the workpiece are different from each other. According to this feature, the flow rate of the processing gas blown onto the workpiece on the workpiece can be adjusted by selecting the above-described processing gas supply system. By utilizing the difference in the flow rate, the amount of moisture adhering to the surface of the object to be treated can be adjusted. Thereby, adjustment can be made to make the etching rate of the ruthenium-containing film good at the stage where the base film is not affected. Therefore, the processing time can be shortened. The influence of the base 139030.doc -13- 201013775 The stage of the base film can be adjusted to make the selection ratio of the ruthenium film to the base film good. Therefore, the etching of the base film can be suppressed, and the spot-like residue containing the ruthenium film can be surely prevented. Preferably, the switching mechanism selects the processing gas supply system having a relatively large flow rate as the etching progresses. Thereby, the processing gas from the supply system having a small flow velocity can be blown to the workpiece at the stage where the base film is not affected, whereby the moisture adhesion amount on the surface of the workpiece can be increased, and the ruthenium-containing film can be surely improved. Etching rate ◎ Therefore, the processing time can be surely shortened, and when the etching proceeds to a stage where the base film is affected, the processing gas from the supply system having a large flow velocity can be blown to the workpiece, thereby allowing the moisture to be self-contained. The surface of the treated object is scattered to reduce the amount of moisture adhering to the surface of the treated object. Therefore, in the case where the base film is composed of nitrite or the like, the selection ratio of the ruthenium-containing film to the base film can be increased. Thereby, the excessive etching of the base film can be suppressed, and the speckle-like residue containing the stone film can be surely prevented from occurring. Preferably, until the majority of the portion (4) of the slit film is etched, the switching mechanism selects the processing (4) supply system having a relatively small flow rate, and when the surviving stone-containing film is left, the flow rate is selected. Larger process gas supply system. Thereby, when the portion of the stone-containing film is partially inscribed (four), the amount of moisture adhering to the surface of the object to be treated can be increased, so that the residual rate can be surely increased. Therefore, the processing time can be surely shortened. Thereafter, when the surviving stone-containing film is subjected to a surname, moisture can be scattered from the surface of the object to be treated, and the amount of moisture adhering to the surface of the object to be treated can be reduced. Therefore, when the base film is composed of nitrite or the like, the selection ratio of the stone-containing film to the base film of 139030.doc 201013775 can be increased. Thereby, over-etching of the base film can be suppressed, and the spot-like residue containing the ruthenium film can be surely prevented from occurring. Preferably, in the plurality of processing gas supply systems, the flow rates of the processing gases of at least two of the processing gas supply systems are different from each other. Thereby, the flow rate of the process gas on the workpiece can be changed by switching the process gas supply system to change the flow rate of the process gas sprayed onto the workpiece. Preferably, the switching mechanism selects a processing gas supply system in which the flow rate of the φ processing gas is relatively large as the etching progresses. Above switching

機構亦可隨著蝕刻之進行，選擇處理氣體之流量相對較小 之處理氣體供給系統P 可構成如下’即’各處理氣體供給系統包括：電漿生成 部’其形成大氣壓附近之電漿空間；以及原料供給管線， 其將开> 成上述氟系反應成分的包含氟系原料且添加有h2〇 之氟系原料氣體，導入至上述電漿空間中；並且，於至少 1個處理氣體供給系統之原料供給管線上，連接有使流速 • 調節用氣體匯流之流速調節用氣體供給部。 連接有上述流速調節用氣體供給部之處理氣體供給系 統’與未連接流速調節用氣體供給部之處理氣體供給系統 ' 相比’可更加容易地增大處理氣體之噴出流量，進而可更 * 加容易地增大被處理物上之氣體流速。 較好的是’各處理氣體供給系統包括：電漿生成部，其 形成大氣壓附近之電漿空間；以及原料供給管線，其將形 成上述氟系反應成分的包含氟系原料且添加有H2〇之氟系 原料氣體’導入至上述電漿空間中；並且，於至少1個處 139030.doc -15- 201013775 理氣體供給系統之較上述電漿空間位於下游側之處理氣體 七、給系統上，連接有使流速調節用氣體匯流之流速調節用 氣體供給部。 連接有上述流速調節用氣體供給部之處理氣體供給系 統，與未連接流速調節用氣體供給部之處理氣體供給系統 相比，可更加容易地增大處理氣體之喷出流量，進而可更 加容易地增大被處理物上之氣體流速。並且，即便於連接 有上述流速調節用氣體供給部之處理氣體供給系統中亦 不會向電漿空間導入流速調節用氣體，可使放電穩定，可 穩定地生成反應成分。 連接有上述流速調節用氣體供給部之處理氣體供給系統 亦可為2個以上。於此情形時，亦可使該等2個以上之處理 氣體供給系統中，至少2個處理氣體供給系統的來自上述 流速調節用氣體供給部之流速調節用氣體的匯流量互不相 同0 作為上述氟系原料，可列舉：全氟碳（pFC， perfluorocarbon)、氫氟碳（HFC ’ hydr〇flu〇r〇carb〇n)、 SF6、NF3、XeF2等。作為PFC可列舉：cf4、C2F6、C3F6、 C3F4。作為HFC可列舉：CHF3、C2H2F2、ch3f等。 亦可使用含OH之化合物來代替H2O。作為含〇H基之化 合物，可列舉雙氧水、醇等。 作為上述氟系原料之稀釋氣體，除Ar、He等之稀有氣體 以外’亦可列舉N2等。 作為IL系反應成分’可列舉HF、COF2等。亦可使用稀 139030.doc -16 - 201013775 釋氣體作為上述流速調節用氣體，對稀釋氣體之流量加以 改變。 於上述切物切、碳切、魏切、碳氮切等之 情形時較好的是，上述處理氣體供給系統對上述被處理物 .卩給包含氟系反應成分與氧化性反應成分之處理氣體。藉 此，可利用氧化性反應成分來將上述含石夕物氧化（式！），之 後，可利用敦系反應成分進行钱刻（式3)。 • a於上述切物為碳化石夕、碳氧化石夕等之情形時，較好的 疋進-步包括加熱機構。可藉由用加熱機構對被處理物加 熱，而將碳化石夕、碳氧化石夕等石夕化，其後，可以與含石夕物 為矽之情形相同之方式進行蝕刻。 於上边含⑦物切、碳切、碳氧切等之情形時較好 的是，上述原料供給管線將上述敗系原料氣體、與形成氧 化性反應成分(〇3、〇自由基等)之氧系原料氣體中的至少 氟系原料氣體導入至上述電漿空間中。 # 上述流速調節用氣體較好的是惰性氣體或氧化性反應氣 體。 作為惰性氣體，除了 Ar、He等之稀有氣體以外，亦可列 舉氮氣㈣。就降低運轉成本之觀點而言，作為上述流速 . _即用氣體之惰性氣體較好的是使用氮氣。 氧化性反應氣體包含上述氡化性反應成分（臭氧（〇3)、過 氧化氫（h2〇2)、氧氣（〇2)等），較好的是包含臭氧㈣。氧 化性反應氣體可包含複數種氧化性反應成分，亦可包含氧 化性反應成分之原料成分。例如氧化性反應氣體可為臭氧 139030.doc •17· 201013775 (〇3)與氧氣（〇2)之混合氣體。進而，氧化性反應氣體亦可 包含氮氣、Ar等之惰性氣體。 如上述所示’對於矽（si)、碳化矽（Sic)、碳氧化矽 (SiOC)、碳氮化矽（SiCN)等經氧化反應後加以蝕刻之含矽 膜’處理氣體包含用以引起上述氧化反應之氧化性反應氣 體。於此情形時’亦可藉由改變氧化性反應氣體之流量， 而改變上述處理氣體之流量，進而改變上述流速。藉此， 亦可將氧化性反應氣體代用作流速調節用氣體。因此，無 需另外準備流速調節專用氣體，可減少所使用之氣體種 類。並且’無論處理氣體整體之流量如何變化’氟系原料 氣體或氟系反應氣體之流量均可維持為固定。因此，可抑 制含石夕膜之姓刻速率變動。 即便蝕刻含矽膜時並不需要氧化性反應成分，亦可使用 氧化性反應氣體作為流速調節用氣體。 亦可構成如下，即，上述處理氣體供給系統包括：氟系 反應氣體供給系統，其對上述被處理物供給含有上述氟系 反應成刀之氟系反應氣體；以及氧化性反應氣體供給系 統’㈣上述被處理物供給含有氧化性反應成分之氧化性 反應孔體，並且，上述流速調節機構對上述氧化性反應氣 體供給系統之供給氣體流量進行調節。 藉此’可根據飯刻之進展，p θ 退展改變氧化性反應氣體之供給 流量，進而改變處理氧魏敕 ^ 虱體整體之供給流量。其結果，可調 郎處理氣體之流速。可gw & j將乳化性反應氣體用於含矽膜之蝕 刻（氧化反應）中，並且亦可 - j用作流速調節用氣體。因此， 139030.doc 201013775 不需要流速調節專用氣體’可減少所需之氣體種類。 藉由分別獨立地設置氟系反應氣體供給系統與氧化性反 應氣體供給系統，無論對氧化性反應氣體之流量如何調 節，氟系反應氣體供給系統之氟系反應氣體之供給流量均 可維持為固定。藉此，可抑制含矽膜之蝕刻速率變動。 氧化性反應氣體可使用氧系原料氣體作為原料，利用電 漿生成部或臭氧產生器等氣體激發裝置而生成。藉由於電 φ 漿生成部中導入例如氧氣（〇2)作為氧系原料氣體且進行電 漿化，可生成包含氧自由基等氧化性反應成分之氧化性反 應氣體。藉由於臭氧產生器中導入氧氣（〇2)作為氧系原料 氣體，可生成由含臭氧之氣體所構成之氧化性反應氣體。 將氧化性反應氣體代用作流速調節用氣體時，對電漿放 電部或臭氧產生器争之氧系原料氣體之供給流量進行調節 即可。藉此，可調節氧化性反應氣體之流量，進而可調節 處理氣體之流量。 • 氧系原料氣體係作為氧.化性反應氣體之原料之氣體。氧 系原料氣體可列舉〇2、Ν0、Ν〇2、Νζ〇等，較好者可列舉 〇2。該等氧系原料氣體自身具有一定程度之氧化作用，亦 可作為氧化性反應氣體而杳揮功能。 • 上述原料供給管線亦可為：將上述氟系原料氣體與上述 乳系原料氣體混合後導入至上述電聚空間中。 亦可利用與上述原料供給管線不同之管線，將氧系原料 • =體電漿化、激發活化或臭氧化而獲得上i氧化性反應成 刀。於此情形時，可將來自上述原料供給管線之氟系反應 139〇3〇.(joc -19· 201013775 成分、與來自上述不同之管線之氧化性反應成分混合後再 供給至被處理物，亦可自不同之噴出口將其等供給至被處 理物。 將氧化性反應氣體代用作流速調節用氣體時，較好的是 利用上述另外之管線來生成氡化性反應氣體。藉此，無論 氧化性反應氣體之流量如何變化，氟系反應氣體之生成效 率均可確實地維持為固定。進而，可使含矽膜之蝕刻速率 穩定。 上述處理氣體供給系統（或上述氧化性反應氣體供給系 統）亦可包括儲存有氧化性反應氣體之儲氣罐等容器。可 自該谷器將氧化性反應氣體直接供給至被處理物。藉此， 可省略用以生成氧化性反應氣體之電漿放電部或臭氧產生 器。 將氧化性反應氣體用作流速調節用氣體時，對氧化性反 應氣體自上述容器之供給流量進行調節即可。自上述容器 之氧化性反應氣體供給管路較好的是，其與較氟系反應氣 體生成用之電漿生成部位於下游之氟系反應氣體供給管路 匯流。 所謂大氣壓附近’係指1.〇13χ104〜50.663xl04 pa之範 圍’考慮到使壓力調整變得容易以及使裝置構成較為簡 便’較好的是1.333x1 04~1 〇·664x104 Pa，更好的是 9·33ΐχΐ〇4〜i〇.397xl04 Pa。 [發明之效果] 根據本發明’可無殘渣且高速率地對含石夕膜進行钱刻， 139030.doc •20· 201013775 並且可抑制基礎膜之蝕刻。 【實施方式】 以下’對本發明之實施形態加以說明。 第1實施形態 本發明可應用來對形成於被處理物上之含矽膜進行蝕 刻。 圖2(a)係表示姓刻前之被處理物9〇之一例的圖。被處理 物90如下所述：例如將平板顯示器用之玻璃作為基板91， 於忒玻璃基板91上形成基礎膜92，於該基礎膜92上積層作 為姓刻對象之含矽膜93 »基礎膜92例如由氮化矽（siNx)構 成。作為蝕刻對象之含矽膜93例如由非晶矽（a_Si)構成。 省略圖示，於被處理物90之含矽膜93中的不應蝕刻之部分 被覆有抗蝕劑等之遮罩。含矽膜93中的未被遮蓋之部分為 應蝕刻之部分。 圖1係表示用於對含矽膜93進行钱刻之钱刻裝置1 一例的 圖。餘刻裝置1包括處理氣體供給系統1〇與支持部2(^利 用支持部20來支持被處理物90。支持部2〇例如由平台構 成。於支持部20之内部設置有加熱部21。可利用加熱部21 對被處理物90加熱。 處理氣體供給系統10包括原料供給管線3〇與電漿生成部 4〇。於原料供給管線30之上游端，設置有氟系原料供給部 31氣糸原料供給部3 1向原料供給管線3 〇中送出氣系原料 氣體。作為氟系原料，可列舉：CF4、CHF3、（:21?6、 C3F8、SF6、NF3、XeF^。此處，使用CF4作為氟系原 139030.doc •21- 201013775 料。氟系原料可使用Ar、He、N2等稀釋氣體加以稀釋，亦 可不加以稀釋。此處，使用以Ar加以稀釋之CF4作為氟系 原料氣體。對於CF4與Ar之體積混合比，較好的是cp4 :The processing gas supply system P may be configured to select a process gas supply system P having a relatively small flow rate of the processing gas as follows: each processing gas supply system includes: a plasma generating portion that forms a plasma space near atmospheric pressure; And a raw material supply line that is introduced into the fluorine-based raw material containing the fluorine-based raw material and added with the fluorine-based raw material, and introduced into the plasma space; and at least one processing gas supply system A gas supply unit for adjusting the flow rate of the flow rate/regulating gas is connected to the raw material supply line. The processing gas supply system of the flow rate adjusting gas supply unit is connected to the processing gas supply system that is not connected to the flow rate adjusting gas supply unit, and the discharge flow rate of the processing gas can be increased more easily, and the amount of the processing gas can be increased more easily. It is easy to increase the gas flow rate on the object to be treated. Preferably, each of the processing gas supply systems includes a plasma generating unit that forms a plasma space in the vicinity of atmospheric pressure, and a raw material supply line that forms a fluorine-based raw material containing the fluorine-based reaction component and is added with H2? The fluorine-based raw material gas is introduced into the above-mentioned plasma space; and, at least one place, 139030.doc -15-201013775, the processing gas of the gas supply system on the downstream side of the plasma space, is connected to the system, and is connected There is a gas supply unit for adjusting the flow rate for converging the flow rate adjusting gas. The processing gas supply system to which the flow rate adjusting gas supply unit is connected can more easily increase the discharge flow rate of the processing gas than the processing gas supply system to which the flow rate adjusting gas supply unit is not connected, thereby making it easier to further Increase the gas flow rate on the treated object. Further, even in the processing gas supply system to which the flow rate adjusting gas supply unit is connected, the gas for adjusting the flow rate is not introduced into the plasma space, so that the discharge can be stabilized and the reaction component can be stably generated. The processing gas supply system to which the flow rate adjusting gas supply unit is connected may be two or more. In this case, the flow rates of the flow rate adjusting gases from the flow rate adjusting gas supply unit of the at least two processing gas supply systems may be different from each other in the two or more processing gas supply systems. Examples of the fluorine-based raw material include perfluorocarbon (pFC, perfluorocarbon), hydrofluorocarbon (HFC 'hydr〇flu〇r〇carb〇n), SF6, NF3, and XeF2. Examples of the PFC include cf4, C2F6, C3F6, and C3F4. Examples of the HFC include CHF3, C2H2F2, and ch3f. Instead of H2O, an OH-containing compound can also be used. Examples of the compound containing a hydrazine H group include hydrogen peroxide, alcohol, and the like. The diluent gas of the fluorine-based raw material may be N2 or the like in addition to the rare gas such as Ar or He. Examples of the IL-based reaction component include HF, COF2, and the like. It is also possible to use a 139030.doc -16 - 201013775 release gas as the above-mentioned gas flow rate adjustment gas to change the flow rate of the dilution gas. In the case of the above-described cutting, carbon cutting, Wei cutting, carbon-nitrogen cutting, etc., it is preferable that the processing gas supply system supplies the processing gas containing the fluorine-based reaction component and the oxidizing reaction component to the object to be treated. . Thereby, the above-mentioned inclusions can be oxidized by the oxidizing reaction component (formula!), and then the reaction component can be used for the engraving (formula 3). • a. In the case where the above cut is carbon stone, carbon oxidized stone, etc., a preferred step comprises a heating mechanism. By heating the object to be processed by a heating means, it is possible to etch the carbon stone, the carbon oxidized stone, and the like, and thereafter, it can be etched in the same manner as the case where the stone is contained. In the case where the upper side contains 7-cut, carbon cut, carbon-oxygen cut, etc., it is preferred that the raw material supply line contains the above-mentioned raw material gas and oxygen which forms an oxidizing reaction component (〇3, 〇 radical, etc.). At least a fluorine-based source gas in the material gas is introduced into the plasma space. # The gas for adjusting the flow rate is preferably an inert gas or an oxidizing reaction gas. As the inert gas, in addition to the rare gas such as Ar or He, nitrogen gas (IV) may be listed. From the viewpoint of lowering the running cost, it is preferable to use nitrogen gas as the above-mentioned flow rate. The oxidizing reaction gas contains the above-described deuterated reaction component (ozone (〇3), hydrogen peroxide (h2〇2), oxygen (〇2), etc.), and preferably contains ozone (tetra). The oxidizing reaction gas may contain a plurality of oxidizing reaction components, and may also contain a raw material component of the oxidizing reaction component. For example, the oxidizing reaction gas may be a mixed gas of ozone 139030.doc • 17· 201013775 (〇3) and oxygen (〇2). Further, the oxidizing reaction gas may contain an inert gas such as nitrogen or Ar. As described above, the ruthenium-containing film treated gas which is etched by oxidation reaction, such as antimony (si), niobium carbide (Sic), niobium oxycarbide (SiOC), or niobium carbonitride (SiCN), is included to cause the above. Oxidative reaction gas for oxidation reaction. In this case, the flow rate of the above-mentioned processing gas can also be changed by changing the flow rate of the oxidizing reaction gas, thereby changing the above flow rate. Thereby, the oxidizing reaction gas can also be used as a gas for adjusting the flow rate. Therefore, it is not necessary to separately prepare a gas for the flow rate adjustment, which can reduce the type of gas used. Further, the flow rate of the fluorine-based raw material gas or the fluorine-based reaction gas can be maintained constant regardless of the flow rate of the entire processing gas. Therefore, it is possible to suppress the change in the rate of the surname of the stone-containing film. Even when an oxidizing reaction component is not required for etching the ruthenium containing film, an oxidizing reaction gas can be used as the gas for adjusting the flow rate. In addition, the processing gas supply system may include a fluorine-based reaction gas supply system that supplies a fluorine-based reaction gas containing the fluorine-based reaction forming blade to the workpiece, and an oxidizing reaction gas supply system (4) The object to be treated is supplied with an oxidizing reaction pore containing an oxidizing reaction component, and the flow rate adjusting means adjusts a flow rate of a supply gas of the oxidizing reaction gas supply system. Therefore, according to the progress of the meal, p θ is degraded to change the supply flow rate of the oxidizing reaction gas, thereby changing the supply flow rate of the whole body of the oxidized gas. As a result, the flow rate of the gas is adjusted. Gw & j can be used for the etching of the ruthenium-containing film (oxidation reaction), and can also be used as a gas for adjusting the flow rate. Therefore, 139030.doc 201013775 does not require a special gas for flow rate adjustment to reduce the type of gas required. By separately providing the fluorine-based reaction gas supply system and the oxidizing reaction gas supply system, the supply flow rate of the fluorine-based reaction gas of the fluorine-based reaction gas supply system can be maintained constant regardless of the flow rate of the oxidizing reaction gas. . Thereby, the variation in the etching rate of the ruthenium-containing film can be suppressed. The oxidizing reaction gas can be produced by using a gas source generating gas or a gas generating device such as an ozone generator. An oxidizing reaction gas containing an oxidative reaction component such as an oxygen radical can be produced by introducing, for example, oxygen (〇2) as an oxygen-based source gas into the electric pulverization generating portion and performing plasmalization. By introducing oxygen (?2) into the ozone generator as the oxygen-based source gas, an oxidizing reaction gas composed of a gas containing ozone can be produced. When the oxidizing reaction gas is used as the gas for adjusting the flow rate, the supply flow rate of the oxygen source gas to the plasma discharge unit or the ozone generator may be adjusted. Thereby, the flow rate of the oxidizing reaction gas can be adjusted, and the flow rate of the processing gas can be adjusted. • The oxygen-based feed gas system is used as a gas for the oxygen-based reaction gas. Examples of the oxygen source gas include 〇2, Ν0, Ν〇2, Νζ〇, and the like, and 〇2 is preferable. These oxygen-based material gases themselves have a certain degree of oxidation, and can also function as an oxidizing reaction gas. The raw material supply line may be obtained by mixing the fluorine-based raw material gas with the above-mentioned raw material gas and introducing the same into the electropolymerization space. It is also possible to use a pipeline different from the above-mentioned raw material supply line to electrolyze, activate, or ozonize the oxygen-based raw material to obtain an upper oxidation reaction. In this case, the fluorine-based reaction 139〇3〇. (joc -19· 201013775 component from the raw material supply line may be mixed with the oxidative reaction component of the different line from the above, and then supplied to the treated object. When the oxidizing reaction gas is used as the gas for adjusting the flow rate, it is preferable to use the above-mentioned separate line to generate the deuterated reaction gas. The flow rate of the reactive gas changes, and the production efficiency of the fluorine-based reaction gas can be surely maintained constant. Further, the etching rate of the ruthenium-containing film can be stabilized. The processing gas supply system (or the oxidizing reaction gas supply system) A container such as a gas storage tank in which an oxidizing reaction gas is stored may be included. The oxidizing reaction gas may be directly supplied to the object to be treated from the barn, whereby the plasma discharge portion for generating an oxidizing reaction gas may be omitted. Or an ozone generator. When the oxidizing reaction gas is used as a gas for adjusting the flow rate, the flow rate of the oxidizing reaction gas from the container is increased. Preferably, the oxidizing reaction gas supply line from the container is connected to a fluorine-based reaction gas supply line located downstream of the plasma generating unit for generating a fluorine-based reaction gas. Refers to the range of 1.〇13χ104~50.663xl04 pa', taking into account the ease of pressure adjustment and making the device simpler. The best is 1.333x1 04~1 〇·664x104 Pa, and more preferably 9·33ΐχΐ〇 4~i〇.397xl04 Pa. [Effect of the Invention] According to the present invention, it is possible to carry out the engraving of the stone-containing film without residue and at a high rate, and 139030.doc •20·201013775 can also suppress the etching of the base film. EMBODIMENT OF THE INVENTION The embodiment of the present invention will be described below. The first embodiment of the present invention is applicable to etching a ruthenium-containing film formed on a workpiece. Fig. 2(a) shows a workpiece 9 before the surname. The object to be processed 90 is as follows: for example, a glass for a flat panel display is used as the substrate 91, and a base film 92 is formed on the glass substrate 91, and a layer is formed on the base film 92 as a surname. 93. The base film 92 is made of, for example, tantalum nitride (siNx). The ruthenium-containing film 93 to be etched is made of, for example, amorphous yttrium (a_Si), and is not shown in the ruthenium-containing film 93 of the object to be processed 90. The portion to be etched is covered with a mask of a resist or the like. The uncovered portion of the ruthenium-containing film 93 is a portion to be etched. Fig. 1 shows a device for engraving the ruthenium-containing film 93. An example of the image processing apparatus 1 includes a processing gas supply system 1 and a support unit 2 (the support unit 20 supports the workpiece 90. The support unit 2 is configured, for example, by a platform. Heat is provided inside the support unit 20. The part 21 can heat the object to be processed 90 by the heating part 21. The process gas supply system 10 includes a raw material supply line 3A and a plasma generating unit 4'. The fluorine-based raw material supply unit 31 is provided at the upstream end of the raw material supply line 30. The gas raw material supply unit 31 supplies the gas-based raw material gas to the raw material supply line 3 . Examples of the fluorine-based raw material include CF4, CHF3, (:21?6, C3F8, SF6, NF3, and XeF^. Here, CF4 is used as the fluorine-based raw material 139030.doc • 21-201013775. Fluorine-based raw materials can be used. The diluent gas such as Ar, He or N2 may be diluted or diluted. Here, CF4 diluted with Ar is used as the fluorine-based source gas. For the volume mixing ratio of CF4 and Ar, cp4 is preferred:

Ar—5 . 95〜80 : 20 ’ 更好的是 CF4 : Ar=l 〇 : 90~30 : 7〇。 原料供給管線30上連接有添加部32。添加部32由儲存有 液態水（H2〇)之加濕器構成，使液態水汽化，以將其添加 於原料供給管線30之氟系原料氣體（CF4+Ar)中。作為添加 方法’可將流動於原料供給管線30中之一部分氟系原料氣 體分流至添加部32中’使該分流氣體接觸添加部32之液 面’從而將水汽化至分流氣體中；亦可使分流氣體在添加 部32之水中起泡’從而將水汽化。亦可用加熱器對水加熱 而使其汽化’然後供給至原料供給管線30中。 於原料供給管線3 0之較添加部3 2之下游側，連接有氧系 原料供給部3 4。原料供給部3 4向原料供給管線3 〇中供給氧 系原料氣體。藉此’在原料供給管線3 〇内將氟系原料氣體 與氧系原料氣體混合。作為氧系原料，可列舉：〇2、 NO、N〇2、NzO等。此處，使用〇2氣體作為氧系原料氣 體。氧系原料供給部34在原料供給管線30上之連接位置亦 可較添加部32位於上游側。 原料供給管線30上連接有流速調節用氣體供給部6〇(流 速調節機構）。流速調節用氣體供給部60在原料供給管線 30上之連接位置較水添加部32位於下游侧，且較氧系原料 供給部3 4之連接部位於下游側，但並不限於此，其可較氧 系原料供給部34位於上游側，亦可較水添加部32位於上游 139030.doc -22- 201013775 側。 流速調節用氣體供給部60中儲存有流速調節用氣體。流 速調節用氣體較好的是惰性氣體。作為惰性氣體，除Ar、Ar—5 . 95~80 : 20 ’ More preferably CF4 : Ar=l 〇 : 90~30 : 7〇. An addition portion 32 is connected to the raw material supply line 30. The addition unit 32 is composed of a humidifier in which liquid water (H2〇) is stored, and vaporizes the liquid water to be added to the fluorine-based material gas (CF4+Ar) of the raw material supply line 30. As an adding method, a part of the fluorine-based raw material gas flowing in the raw material supply line 30 can be branched into the adding portion 32 to cause the divided gas to contact the liquid surface of the adding portion 32 to vaporize the water into the split gas; The split gas bubbles in the water of the adding portion 32 to vaporize the water. It is also possible to heat the water with a heater to vaporize it and then supply it to the raw material supply line 30. The oxygen-based raw material supply unit 34 is connected to the downstream side of the additive supply unit 3 2 of the raw material supply line 30. The raw material supply unit 34 supplies the oxygen-based material gas to the raw material supply line 3 . Thereby, the fluorine-based source gas and the oxygen-based source gas are mixed in the raw material supply line 3 . Examples of the oxygen-based raw material include ruthenium 2, NO, N〇2, and NzO. Here, 〇2 gas is used as the oxygen-based raw material gas. The connection position of the oxygen-based raw material supply unit 34 on the raw material supply line 30 may be located on the upstream side of the addition portion 32. A flow rate adjusting gas supply unit 6 (flow rate adjusting mechanism) is connected to the raw material supply line 30. The connection position of the flow rate adjusting gas supply unit 60 on the raw material supply line 30 is located on the downstream side of the water addition unit 32, and the connection portion of the oxygen-based raw material supply unit 34 is located on the downstream side. However, the present invention is not limited thereto. The oxygen-based raw material supply unit 34 is located on the upstream side, and may be located upstream of the water addition unit 32 on the side of 139030.doc -22-201013775. The flow rate adjusting gas is stored in the flow rate adjusting gas supply unit 60. The gas for adjusting the flow rate is preferably an inert gas. As an inert gas, except for Ar,

He等之稀有氣體以外，亦可列舉乂。此處，使用ν2作為流 速調節用氣體》 流速調節用氣體供給部60可採用於原料供給管線3〇中混 合流速調節用氣體之混合模式、以及停止混合之停止模式 之兩種狀態。省略詳細圖示，於流速調節用氣體供給部6〇 中設置有開閉閥及流量控制閥。利用該等閥，來選擇混合 模式與停止模式巾之任-者，或者於混合模式下調節流速 調節用氣體（Ν2)之流量。氟系原料氣體（CF4+Ar)與流速調 節用氣體（N2)之混合比較好的是在（CF4+Ar) : N2=i〇 : 1〜2 : 1之範圍内設定。 原料供給管線30之下游端朝電漿生成部4〇延伸。 電漿生成部40包括相互對向之一對電極41、41。於至少 一電極41之對向面上設置有固體介電體層（未圖示卜該等 電極41、41中之一者與電源42相連接，另—者電性接地。 利用來自電源42之電壓供給，電極41、41間之空間“形成 大孔壓附近之電漿空間。電漿空間43之上游端與 管㈣相連接。在„空間43之下游端，設置有包含喷;; 之噴出59 °噴出部59面對著支持部2()上之被處理物⑼。 嘴出59可構成為以在支持部2〇之兩端間往復之方式而相 對於支持部2G進行相對移動（掃描）。 省略圖不，但噴出部59之底面具有一定程度之面積， 139030.doc -23- 201013775 與被處理物90之間形成氣體管路。自噴出部59之開口喷出 之處理氣體經過上述氣體管路内後，沿被處理物9〇之表面 朝遠離噴出部59之開口之方向流動。 就使用上述構成之餘刻裝置1，對被處理物9〇之含梦膜 93進行蝕刻之方法加以說明。 蝕刻步驟可區分為：自蝕刻初期至中期（到達末期之前） 為止之第1蝕刻步驟，以及在蝕刻末期所進行之第2蝕刻步 驟。In addition to rare gases such as He, cesium may also be mentioned. Here, ν2 is used as the gas for adjusting the flow rate. The flow rate adjusting gas supply unit 60 can be used in two modes of a mixing mode in which the flow rate adjusting gas is mixed in the raw material supply line 3, and a stop mode in which the mixing is stopped. The flow rate adjustment gas supply unit 6A is provided with an on-off valve and a flow rate control valve, which are omitted from the detailed illustration. Use these valves to select either the mixing mode or the stop mode towel, or adjust the flow rate of the flow rate adjusting gas (Ν2) in the mixing mode. The mixing of the fluorine-based raw material gas (CF4 + Ar) and the flow rate adjusting gas (N2) is preferably set within the range of (CF4 + Ar) : N2 = i 〇 : 1 to 2 : 1. The downstream end of the raw material supply line 30 extends toward the plasma generating portion 4A. The plasma generating unit 40 includes a pair of counter electrodes 41 and 41 facing each other. A solid dielectric layer is disposed on the opposite surface of at least one of the electrodes 41 (not shown, one of the electrodes 41, 41 is connected to the power source 42 and the other is electrically grounded. The voltage from the power source 42 is utilized. Supply, the space between the electrodes 41, 41 "forms a plasma space near the large pore pressure. The upstream end of the plasma space 43 is connected to the tube (four). At the downstream end of the space 43, there is a spray containing 59; The ejecting portion 59 faces the object to be processed (9) on the support portion 2 (). The nozzle 59 can be configured to relatively move (scan) with respect to the support portion 2G so as to reciprocate between both ends of the support portion 2A. The bottom surface of the ejection portion 59 has a certain degree of area, and a gas line is formed between the 139030.doc -23-201013775 and the workpiece 90. The processing gas ejected from the opening of the ejection portion 59 passes through the gas. After the inside of the pipe, the surface of the workpiece 9〇 flows in a direction away from the opening of the discharge portion 59. The method of etching the mask film 93 of the workpiece 9 is processed by using the above-described configuration of the remnant device 1. The etching step can be divided into: self-etching (Prior to reaching the end) up to the mid of the first etching step and second etching step performed at the end of the etching step.

[第1蝕刻步驟][First etching step]

第1钱刻步驟中，自氟系原料供給部31將氟系原料氣體 (Ch+Ar)送出至原料供給管線3〇中。利用添加部32於該氟 系原料氣體中添加水（ha)。水之添加量由添加部32來調 節。水之添加量係於不產生結露之程度下儘量較多。較好 的是，使氟系原料氣體包含露點溫度為1〇〜5〇β(：之水分。 氟系原料氣體之露點溫度較好的是低於環境溫度或被處理 物90之溫度。藉此，可防止其於構成原料供給管線3〇之配 營内或被處理物90之表面上結露。於不利用加熱部21加熱 被處理物90而使其為室溫之情形時，^系原料氣體之露點 較好的是調整為15〜2〇它。 於添加水之後之氟系原料氣體（CFdAr+^O)中，混合來 自氧系原料供給部34之氧系原料氣體（〇2)，生成混合原料 氣體。對於氟系原料氣體與氧系原料氣體之體積混合比， 較好的疋氟系原料氣體：氧系原料氣體=1 : 9〜9 : 1，更好 的是氟系原料氣體：氧系原料氣體=1 ·· 2〜2:卜由於水之 139030.doc -24- 201013775 體積比率相對於氟系原料氣體及氧系原料氣體而言非常 小，因而添加水之前之敗系原料氣體與氧系原料氣體之體 積比，、添加水之後之1系原料氣體與氧系原料氣體之體 積比幾乎相同。 . 於第1㈣步财，將流速調節用氣體供給㈣設為停 止模式，停止向原料供給管線3〇中混合流速調節用氣體 .(N2)。上述混合原料氣體（CF4+Ar+〇2+H2〇)中並不混合流 春 速調節用氣體（N2)，而直接自原料供給f線3()之下游端導 入至電極間空間43中。 並订地，電源42向電極41供給電壓，在電極間空間杓内 生成大氣壓附近電漿。藉此，混合氣體電漿化（包括分 解、激發、活化、自由基化、離子化等），生成包含敦系 反應成分舆氧化性反應成分之處理氣體。以下，將第工蝕 刻步驟之處理氣體適當稱作「第丨處理氣體」。第丨處理氣 體係可高速率地蝕刻矽93之配方（recipe)。作為氟系反應 • 成分，可列舉HF、COF2等。該等氟系反應成分係主要由 CF4及H2〇分解而生成者。作為氧化性反應成分，可列舉 〇3、〇自由基等。該等氧化性反應成分係主要以〇2作為原 • 料两生成者。 .第1處理氣體自電漿生成部40噴出，並被喷附於支持部 2〇上之被處理物90上。第1處理氣體在被處理物9〇之表面 上流動。被處理物90之表面上之氣體流速小於後述之第2 蚀刻步驟。該第1處理氣體中之氧化性反應成分與由非晶 矽所構成之含矽膜93相接觸，引起矽之氧化反應，生成氧 139030.doc -25- 201013775 化石夕（式1)。氟系反應成分與該氧化石夕相接觸（式3)，生成 揮發性之SiF4。如此，可蝕刻速率良好地蝕刻含矽膜93。 第1處理氣體中亦包含在電漿空間43内未被分解之混合 原料氣體成分，因此亦包含水。該水之一部分與氟系反應 成分之COF2反應而生成HF(式2)，有助於矽之蝕刻。剩餘 之水之一部分附著於被處理物9〇之表面且冷凝。又，利用 HF進行姓刻反應（式3 )時會生成水，該水之一部分亦附著 於被處理物90之表面且冷凝。藉此，在被處理物9〇之表面 形成水之冷凝層。第1處理氣體在被處理物9〇上之流速大 ❹ 小為不使被處理物90之表面上之水分較多飛散的程度。因 此，冷凝層形成為適度之厚度，可充分地提高矽之蝕刻速 〇 另一方面，存在於被處理物9〇之表面之若干處水之冷 凝層達到所需厚度以上之情形。冷凝層較厚之部位的蝕刻 反應會受到阻礙。因此，如圖2(b)及圖2(c)所示，於蝕刻 即將到達末期之前的被處理物9〇之表面，出現基礎膜92露 出之部位、以及尚殘存有應蝕刻之含矽膜93之部位。將殘 Θ 存之含矽膜93稱作殘膜93a。殘膜93a呈斑點狀（斑雜狀）。 [第2蚀刻步驟] 如圖2(b)及圖2(c)所示，當蝕刻進行至一部分基礎膜％ 露出時、或即將露出之前，自第丨蝕刻步驟切換為第2蝕刻 步驟。可在檢測出基礎膜92露出或殘存於基礎膜92上之含 矽膜93的厚度之後，切換為第2蝕刻步驟，亦可預先藉由 實驗等來確疋切換之時間點，在該時間點切換為第2蝕刻 139030.doc • 26 - 201013775 步驟。 於第2蚀刻步驟中，將流速調節用氣體供給部60設為混 合模式°除此以外之動作及處理條件較好的是與第1蝕刻 步驟相同。因此’自流速調節用氣體供給部6〇，向與第1 蚀刻步驟為相同成分且相同流量之混合原料氣體 (CF4+Ar+〇2+H2〇)令混合流速調節用氣體（n2)。藉此，原 • 料氣體之流量增加。 φ 將混合後之原料氣體（CF4+Ar+〇2+H2〇+N2)導入至電漿 空間43中使其電漿化。藉此，生成包含HF、c〇F2等之氟 系反應成分與〇3、〇自由基等之氧化性反應成分的處理氣 體。以下’將第2蝕刻步驟之處理氣體適當稱作「第2處理 氣體」。第2處理氣體之流量僅比第1蝕刻步驟中的第1處理 氣體之流量大出流速調節用氣體（NO之混合部分。第2處 理氣體中之氟系反應成分（HF等）及氧化性反應成分（〇3等） 之量與第1蝕刻步驟大致相等。 φ 該第2處理氣體自喷出部59喷出，並被吹附於被處理物 90上。與氣體流量增大相對，喷出部59之孔徑保持為固 定’因而第2處理氣體自噴出部59之喷出速度，大於第1姓 ' 刻步驟中之第1處理氣體之噴出速度。進而，第2處理氣體 ， 在被處理物90之表面上流動。與氣體流量增大相對，嘖出 部59與被處理物90之間之距離（工作距離）保持為固定，因 而第2處理氣體在被處理物9〇之表面上的流速大於第i蝕刻 步驟中之第1處理氣體的流速。 由於氣體流速增大’使得被處理物9〇之表面上之水分容 139030.doc -27- 201013775 易飛散。因此，被處理物90之表面之水分附著量小於約 触刻㈣，冷凝層之厚度小於第1钱刻步驟。4凝層減小 時，底層之氮化石夕膜92之姓刻速率降低。該氮化石夕之㈣ 速率之降低程度，大於隨著冷凝層減小石夕之蚀刻速率之降 低程度。因此，可增大钱刻對象膜93相對於基礎膜92之選 擇比。又，由於第2處理氣體中之氣系反應成分阳等）及 氧化性反應成分(〇3等)之量與第1蝕刻步驟大致相等，因 而可抑制石夕之钱刻速率降低。藉此，如圖2⑷所示，可餅 刻速率良好地選擇性地㈣斑點狀之殘膜9 3 &而將其去 除，可減小基礎膜92之過度蝕刻量d。 僅藉由將流速㈣用氣體供給㈣自停止模式切換為混 合模式，即可容易地自第⑽刻步驟切換為第W刻步驟， 其回應性例如與制添加部32來改變水之添加率相比更 好。 其次’就本發明之其他實施形態加以說明。以下之實施 ❿ 形態中’對於與既述之實施形態重複之構成，在圖式中附 上相同之符號且適當省略說明。 第2實施形態 如® 3所不’於第2實施形態中’向處理氣體供給系統 中混合流速調節用氣體之混合位置與第Θ施形態(圖”不 冋。流速調節用氣體供給部60並非與較電衆生成部4〇位於 上游側之原料供給管線3_連接，而係與較電Μ成部4〇 位於下游側之噴出管線50相連接。 喷出管線50自電漿空間43延伸。於噴出管線兄之下游端 139030.doc • 28 - 201013775 設置有噴出部59。於喷出管線5G之中間部連接有流速調節 用氣體供給部60。 流速調節用氣體供給部60在第i蝕刻步驟中為停止模 式。因此，第1蝕刻步驟之動作與第丨實施形態相同。 於第2蝕刻步驟中，流速調節用氣體供給部6〇為混合模 式。在原料供給管線3〇中生成與第i蝕刻步驟為相同成分 且相同流量之混合原料氣體（CF4+Ar+〇2+H2〇)，且將其導 入至電漿生成部40中。並不向導入至電漿生成部4〇中之前 之混合原料氣體中混合流速調節用氣體。因此，即便自第 1飯刻步驟切換為第2蝕刻步驟，電漿空間43中之氣體狀態 亦不會變化’可使放電穩定。 藉由於電漿空間43中電漿化，可獲得包含氟系反應成分 (HF等）及氧化性反應成分（ο;等）之處理氣體。該等反應成 分之生成量可達到與第1蝕刻步驟相同之量。 將該處理氣體導出至噴出管線50中。自供給部6〇向該處 理氣體中混合流速調節用氣體（NO。藉此，處理氣體之流 量增大。因此，與第1實施形態之第2蝕刻步驟相同地，可 增大被處理物90上之氣體流速。 第3實施形態 如圖4所示，第3實施形態之處理氣體供給系統1〇構成為 分別獨立地生成氟系反應成分與氧化性反應成分。處理氣 體供給系統10具有分別獨立之氟系反應氣體供給系統33與 氧化性反應氣體供給系統35。氟系反應氣體供給系統33包 括原料供給管線30、電漿生成部40及氟系喷出管路5 1。原 139030.doc •29- 201013775 料供給管線30除未連接有氧系原料供給部34以外，均與第 2實施形態（圖3)相同。氟系噴出管料上連接有流速調節 用氣體供給部60。原料供給管線3〇僅將氟系原料氣體 (CF4+Ar+H2〇)導入至電漿生成部4〇中，而並不向電漿生成 部40中導入氧系原料氣體。氧系噴出管路51自電漿生成部 4〇之電漿空間43之下游端延伸。 氧化性反應氣體供給系統35包括氧系原料供給部34、與 電漿生成部40不同的電毁生成部44、及氧系喷出管路^/ 電漿生成部44包括相互對向之一對電極45、45。於至少 一電極45之對向面上設置有固體介電體層（未圖示）。該等 電極45、45中之一者與電源46相連接，另一者電性接地。 利用來自電源46之電壓供給，電極牦、45間之空間叼形成 大氣壓附近之電漿空間。於電漿空間47之上游端連接有氧 系原料供給部34。氧系喷出管路52自電漿生成部44之電漿 空間47之下游端延伸。 氟系反應氣體供給系統33之喷出管路5丨與氧化性反應氣 體供給系統35之喷出管路52相互匯流。於該匯流部處連接 有共用噴出部53。共用噴出部53面對著支持部2〇上之被處 理物90。共用喷出部53可構成為以在支持部2〇之兩端間往 復之方式而相對於支持部2〇進行相對移動。 第3實施形態中，於氟系反應氣體供給系統33内，在電 漿生成部40中將氟系原料氣體（CF4 + Ar + H2〇)電漿化，生成 包含氟系反應成分（HF等）之氟系反應氣體，並將其導出至 喷出管路5 1中。並行地，於氧化性反應氣體供給系統35 139030.doc -30· 201013775 内，將來自氧系原料供給部34之氧系原料氣體（〇2)導入至 電漿生成部44之電漿空間47中而使之電漿化，生成包含氧 化性反應成分（〇3等）之氧化性反應氣體。將該氧化性反應 氣體自電漿生成部44導出至噴出管路52中，與來自噴出管 路5 1之氟系反應氣體混合。對於氟系反應氣體與氧化性反 應氣體之體積混合比，較好的是氟系反應氣體：氧化性反 應氣體=1 : 9〜9 : 1，更好的是氟系反應氣體：氧化性反應 氣體-1 . 2〜2 . 1。混合後獲得包含氟系反應成分及氧化性 反應成分之處理氣體。將該處理氣體自喷出部53喷附於被 處理物90上。 於第3實施形態中，由於係使氟系原料氣體與氧系原料 氣體在分別獨立之電漿生成部4〇、44中電漿化，因而可分 別使氟系反應成分之生成量與氧化性反應成分之生成量足 夠大。藉此，可提高第1、第2之各钮刻步驟中的含矽膜93 之钱刻速率，可進一步縮短處理時間。 於第3實施形態中，第i蝕刻步驟中流速調節用氣體供給 部60為停止模式，第2蝕刻步驟中流速調節用氣體供給部 60為混合模式之方面’與既述之實施形態相同。因此，於 第2蝕刻步驟中，將來自供給部60之流速調節用氣體（n2) 導入至喷出管路51中’並與氟系反應氣體混合。 第4實施形態 如圖5所示，於第4實施形態中，作為氧化性反應氣體供 給系統35中之氧化性反應氣體之生成裝置，係使用臭氧產 生器48而非電漿生成部44。將來自氧系原料供給部“之氧 139030.doc •31 · 201013775 氣（〇2)導入至臭氧產生器48中，生成包含〇3之氧化性反應 氣體，將該氧化性反應氣體導出至喷出管路52中。 其他構成及動作與第3實施形態（圖4)相同。 第5實施形態 如圖6所示，第5實施形態之银刻裝置1包括複數個（2個） 處理氣體供給系統10。各處理氣體供給系統1〇之構成與第 1、第2實施形態（圖1、圖3)之處理氣體供給系統1 〇大致相 同。要區分2個供給系統10時’對於第1處理氣體供給系統In the first step, the fluorine-based raw material supply unit 31 sends the fluorine-based raw material gas (Ch+Ar) to the raw material supply line 3〇. Water (ha) is added to the fluorine-based material gas by the addition unit 32. The amount of water added is adjusted by the adding portion 32. The amount of water added is as much as possible without causing condensation. Preferably, the fluorine-based source gas contains a dew point temperature of 1 〇 to 5 〇 β (: moisture. The dew point temperature of the fluorine-based source gas is preferably lower than the ambient temperature or the temperature of the workpiece 90. It is prevented from dew condensation in the distribution constituting the raw material supply line 3A or on the surface of the workpiece 90. When the heating target 21 is used to heat the workpiece 90 to room temperature, the raw material gas is used. The dew point is preferably adjusted to 15 to 2 〇. The fluorine-based source gas (CFdAr+^O) after the addition of water is mixed with the oxygen-based source gas (〇2) from the oxygen-based raw material supply unit 34 to form a mixture. Raw material gas. The volume mixing ratio of the fluorine-based source gas and the oxygen-based source gas is preferably a fluorine-based raw material gas: an oxygen-based raw material gas = 1: 9 to 9: 1, more preferably a fluorine-based raw material gas: oxygen The raw material gas is =1.·2~2: 129030.doc -24- 201013775, the volume ratio is very small with respect to the fluorine-based source gas and the oxygen-based source gas, so that the raw material gas before the addition of water is The volume ratio of the oxygen source gas, 1 after the addition of water The volume ratio of the source gas to the oxygen source gas is almost the same. In the first step (4), the gas flow rate adjustment gas supply (4) is set to the stop mode, and the gas flow rate adjustment gas is stopped in the raw material supply line 3 (N2). The mixed raw material gas (CF4+Ar+〇2+H2〇) is not mixed with the gas for adjusting the spring velocity (N2), but is introduced directly into the interelectrode space 43 from the downstream end of the raw material supply f line 3 (). Further, the power source 42 supplies a voltage to the electrode 41, and generates a plasma near atmospheric pressure in the inter-electrode space 。. Thereby, the mixed gas is plasmated (including decomposition, excitation, activation, radicalization, ionization, etc.) to generate The treatment gas containing the oxidative reaction component of the reaction component is hereinafter referred to as a "second treatment gas" as appropriate. The ninth treatment gas system can etch the formulation of 矽93 at a high rate (recipe) Examples of the fluorine-based reaction component include HF, COF2, etc. The fluorine-based reaction components are mainly produced by decomposing CF4 and H2, and examples of the oxidative reaction component include ruthenium, ruthenium, and the like. The oxidative reaction component is mainly composed of ruthenium 2 as the original material. The first process gas is ejected from the plasma generator 40 and is sprayed onto the workpiece 90 on the support portion 2 . (1) The processing gas flows on the surface of the workpiece 9. The gas flow rate on the surface of the workpiece 90 is smaller than the second etching step described later. The oxidizing reaction component in the first processing gas is composed of amorphous ruthenium. The ruthenium-containing film 93 is in contact with each other to cause an oxidation reaction of ruthenium to generate oxygen 139030.doc -25- 201013775 fossil (Formula 1). The fluorine-based reaction component is in contact with the oxidized stone (Formula 3) to form a volatile SiF4. Thus, the ruthenium containing film 93 can be etched at a good etch rate. The first process gas also contains a mixed material gas component which is not decomposed in the plasma space 43, and therefore contains water. One part of this water reacts with COF2 of the fluorine-based reaction component to form HF (Formula 2), which contributes to the etching of ruthenium. A part of the remaining water adheres to the surface of the object 9 to be condensed. Further, when the HF is used for the surname reaction (Formula 3), water is generated, and a part of the water adheres to the surface of the object to be treated 90 and condenses. Thereby, a condensation layer of water is formed on the surface of the workpiece 9〇. The flow rate of the first processing gas on the workpiece 9〇 is so large that the moisture on the surface of the workpiece 90 is not scattered. Therefore, the condensation layer is formed to have a moderate thickness, and the etching rate of the crucible can be sufficiently increased. On the other hand, there are cases where the water condensed layer of the surface of the object 9 is at a desired thickness or more. The etching reaction in the thicker portion of the condensation layer is hindered. Therefore, as shown in Fig. 2 (b) and Fig. 2 (c), on the surface of the workpiece 9 之前 immediately before the end of the etching, the exposed portion of the base film 92 appears, and the ruthenium film to be etched remains. The part of 93. The ruthenium-containing film 93 in which the residue is stored is referred to as a residual film 93a. The residual film 93a is spotted (porous). [Second Etching Step] As shown in Fig. 2 (b) and Fig. 2 (c), the etching is switched from the second etching step to the second etching step until the etching progresses until a part of the base film % is exposed. After detecting the thickness of the ruthenium-containing film 93 exposed or remaining on the base film 92, the second etching step may be switched, and the time point of switching may be confirmed by an experiment or the like in advance at the time point. Switch to the 2nd etch 139030.doc • 26 - 201013775 steps. In the second etching step, the flow rate adjusting gas supply unit 60 is set to the mixing mode. The other operations and processing conditions are preferably the same as in the first etching step. Therefore, the gas flow rate adjusting unit (n2) is mixed with the mixed material gas (CF4+Ar+〇2+H2〇) having the same flow rate and the same flow rate as the first etching step. Thereby, the flow rate of the raw material gas increases. φ The mixed raw material gas (CF4+Ar+〇2+H2〇+N2) is introduced into the plasma space 43 to be plasma-formed. Thereby, a treatment gas containing a fluorochemical reaction component such as HF or c〇F2 and an oxidative reaction component such as ruthenium or ruthenium radical is produced. Hereinafter, the processing gas in the second etching step is appropriately referred to as "second processing gas". The flow rate of the second processing gas is larger than the flow rate of the first processing gas in the first etching step, and the gas for adjusting the flow rate (the mixed portion of NO. The fluorine-based reaction component (HF or the like) in the second processing gas and the oxidative reaction The amount of the component (〇3, etc.) is substantially equal to that of the first etching step. φ The second processing gas is ejected from the ejecting unit 59 and is blown onto the workpiece 90. The gas is ejected in comparison with the increase in the gas flow rate. The aperture of the portion 59 is kept constant. Therefore, the ejection speed of the second processing gas from the ejection portion 59 is larger than the ejection speed of the first processing gas in the first surname step. Further, the second processing gas is processed. The surface of 90 flows. As the gas flow rate increases, the distance (working distance) between the scooping portion 59 and the workpiece 90 is kept constant, and thus the flow rate of the second processing gas on the surface of the workpiece 9〇 It is larger than the flow rate of the first process gas in the i-th etching step. Since the gas flow rate is increased 'the water content on the surface of the object to be treated 9〇 is 139030.doc -27- 201013775 is easy to fly. Therefore, the surface of the object to be treated 90 The amount of moisture attached is less than about At the moment of engraving (4), the thickness of the condensing layer is less than the first step. When the condensed layer is reduced, the rate of the nitrite film 92 of the bottom layer is reduced. The rate of the nitrite (four) is reduced more than the condensing layer. The degree of reduction of the etching rate of Shi Xi is reduced. Therefore, the selection ratio of the target film 93 relative to the base film 92 can be increased. Further, due to the gas reaction component of the second processing gas, etc., and the oxidative reaction component ( The amount of 〇3, etc. is substantially equal to the first etching step, so that the rate of the etched money can be suppressed. Thereby, as shown in Fig. 2 (4), the (4) spot-like residual film 9 3 & can be selectively removed at a good rate, and the excessive etching amount d of the base film 92 can be reduced. It is easy to switch from the (10)th step to the Wth step only by switching the flow rate (4) from the stop mode to the mixed mode by the gas supply (4), and the responsiveness is changed, for example, with the addition portion 32 to change the water addition rate. Better than that. Next, other embodiments of the present invention will be described. In the following embodiments, the same reference numerals are given to the above-described embodiments, and the same reference numerals are attached to the drawings, and the description thereof will be appropriately omitted. In the second embodiment, the mixing position and the third embodiment of the flow rate adjusting gas are mixed in the processing gas supply system as in the second embodiment (the figure is not shown). The flow rate adjusting gas supply unit 60 is not The raw material supply line 3_ located on the upstream side of the electric generation unit 4A is connected to the discharge line 50 on the downstream side of the electric heating unit 4A. The discharge line 50 extends from the plasma space 43. The downstream end of the discharge line brother 139030.doc • 28 - 201013775 is provided with a discharge portion 59. The flow rate adjustment gas supply portion 60 is connected to the intermediate portion of the discharge line 5G. The flow rate adjustment gas supply portion 60 is in the i-th etching step. The middle is in the stop mode. Therefore, the operation of the first etching step is the same as that of the third embodiment. In the second etching step, the flow rate adjusting gas supply unit 6 is in the mixing mode. The raw material supply line 3 is generated in the second supply step. The etching step is a mixed material gas (CF4+Ar+〇2+H2〇) of the same composition and at the same flow rate, and is introduced into the plasma generating unit 40. It is not mixed before being introduced into the plasma generating unit 4〇. Raw gas The gas for adjusting the flow rate is mixed in the body. Therefore, even if the first cooking step is switched to the second etching step, the gas state in the plasma space 43 does not change, and the discharge can be stabilized. By slurrying, a processing gas containing a fluorine-based reaction component (HF or the like) and an oxidative reaction component (o; etc.) can be obtained, and the amount of the reaction components can be equal to the amount of the first etching step. The gas is supplied to the discharge line 50. The flow rate adjustment gas (NO is mixed into the process gas from the supply unit 6), whereby the flow rate of the process gas is increased. Therefore, similarly to the second etching step of the first embodiment, The flow rate of the gas on the workpiece 90 can be increased. As shown in Fig. 4, the processing gas supply system 1 of the third embodiment is configured to independently generate a fluorine-based reaction component and an oxidative reaction component. The gas supply system 10 has a separate fluorine-based reaction gas supply system 33 and an oxidizing reaction gas supply system 35. The fluorine-based reaction gas supply system 33 includes a raw material supply line 30 and plasma generation. 40 and the fluorine-based discharge line 5 1. The original supply line 30 is the same as the second embodiment (Fig. 3) except that the oxygen-based raw material supply unit 34 is not connected. The fluorine-based discharge is the same as the second embodiment (Fig. 3). The flow rate adjusting gas supply unit 60 is connected to the pipe material. The raw material supply line 3〇 introduces only the fluorine-based material gas (CF4+Ar+H2〇) into the plasma generating unit 4〇, and does not flow to the plasma generating unit. An oxygen-based source gas is introduced into the reactor 40. The oxygen-based discharge line (51) extends from the downstream end of the plasma space (43) of the plasma generating unit (4). The oxidizing reaction gas supply system (35) includes an oxygen-based material supply unit (34) and plasma generation. The electric shock generation unit 44 and the oxygen discharge line/the plasma generation unit 44 of the unit 40 include a pair of counter electrodes 45 and 45 facing each other. A solid dielectric layer (not shown) is disposed on the opposite surface of at least one of the electrodes 45. One of the electrodes 45, 45 is connected to the power source 46, and the other is electrically grounded. With the voltage supply from the power source 46, the space between the electrodes 牦, 45 叼 forms a plasma space near atmospheric pressure. An oxygen-based raw material supply unit 34 is connected to the upstream end of the plasma space 47. The oxygen-based discharge line 52 extends from the downstream end of the plasma space 47 of the plasma generating portion 44. The discharge line 5A of the fluorine-based reaction gas supply system 33 and the discharge line 52 of the oxidizing reaction gas supply system 35 are merged with each other. A common discharge portion 53 is connected to the confluence portion. The shared ejection portion 53 faces the processed object 90 on the support portion 2''. The common discharge portion 53 can be configured to relatively move relative to the support portion 2A so as to overlap between the both ends of the support portion 2A. In the third embodiment, in the fluorine-based reaction gas supply system 33, the fluorine-based source gas (CF4 + Ar + H 2 〇) is plasma-formed in the plasma generating unit 40 to generate a fluorine-containing reaction component (HF or the like). The fluorine-based reaction gas is led to the discharge line 51. In parallel, the oxygen-based material gas (〇2) from the oxygen-based raw material supply unit 34 is introduced into the plasma space 47 of the plasma generating unit 44 in the oxidizing reaction gas supply system 35 139030.doc -30·201013775. Further, it is plasma-formed to form an oxidizing reaction gas containing an oxidizing reaction component (〇3 or the like). This oxidizing reaction gas is led out from the plasma generating unit 44 to the discharge line 52, and mixed with the fluorine-based reaction gas from the discharge line 51. The volume mixing ratio of the fluorine-based reaction gas to the oxidizing reaction gas is preferably a fluorine-based reaction gas: an oxidizing reaction gas = 1: 9 to 9: 1, more preferably a fluorine-based reaction gas: an oxidizing reaction gas -1 . 2~2 . 1. After mixing, a processing gas containing a fluorine-based reaction component and an oxidizing reaction component is obtained. This processing gas is sprayed from the discharge portion 53 onto the workpiece 90. In the third embodiment, the fluorine-based source gas and the oxygen-based source gas are plasmad in the separate plasma generating portions 4A and 44, so that the amount of the fluorine-based reaction component and the oxidizing property can be respectively obtained. The amount of the reaction component produced is sufficiently large. Thereby, the rate of the ruthenium-containing film 93 in the first and second button-finishing steps can be increased, and the processing time can be further shortened. In the third embodiment, the flow rate adjusting gas supply unit 60 is in the stop mode in the i-th etching step, and the flow rate adjusting gas supply unit 60 is in the mixed mode in the second etching step, which is the same as the above-described embodiment. Therefore, in the second etching step, the flow rate adjusting gas (n2) from the supply unit 60 is introduced into the discharge line 51 and mixed with the fluorine-based reaction gas. Fourth Embodiment As shown in Fig. 5, in the fourth embodiment, the ozone generating device 48 is used as the oxidizing reaction gas generating device in the oxidizing reaction gas supply system 35 instead of the plasma generating portion 44. The oxygen source 139030.doc •31 · 201013775 gas (〇2) from the oxygen-based raw material supply unit is introduced into the ozone generator 48 to generate an oxidizing reaction gas containing cerium 3, and the oxidizing reaction gas is led to the discharge. The other configuration and operation are the same as those of the third embodiment (Fig. 4). As shown in Fig. 6, the fifth embodiment has a plurality of (two) processing gas supply systems. 10. The configuration of each processing gas supply system 1 is substantially the same as that of the processing gas supply system 1 of the first and second embodiments (Figs. 1 and 3). When the two supply systems 10 are to be distinguished, 'for the first processing gas Supply system

10A之各構成要素，在與既述實施形態之處理氣體供給系 統10中的對應之構成要素相同的符號後附加上A，對於第2 處理氣體供給系統10B之各構成要素，在與既述實施形態 之處理氣體供給系統1 0中的對應之構成要素相同的符號後 附加上B。Each component of 10A is added with the same reference numeral as the corresponding component in the processing gas supply system 10 of the embodiment, and the components of the second processing gas supply system 10B are implemented as described above. In the form of the processing gas supply system 10, the corresponding components are denoted by the same reference numerals, and B is added.

第1處理軋體供給系統10 A與第1、第2實施形態（圖丨、圖 3)之處理氣體供給系統1〇的不同之處在於未連接有流速調 節用氣體供給部60。因此，自第i處理氣體供給系統i〇a 一 直噴出不包含流速調節用氣體（NO之第！處理氣體。來自 該供給系統10A之第1處理氣體之成分及流量與第丨、第二實 施形態之第1蝕刻步驟中的第丨處理氣體相同。 第2處理氣體供給系統10B之構成與第2實施形態（圖”之 處理氣體供給系統1〇相同。只是，第2處理氣體供給系統 10B之流速調節用氣體供給部6〇B —直於混合模式下運 行。因此，自第2處理氣體供給系統1〇B一直喷出包含流速 調節用氣體（N2)之第2處理氣體。來自該供給系統i〇b=第 139030.doc -32- 201013775 2處理氣體之成分及流量係與第丨、第2實施形態之第2蝕刻 步驟中的第2處理氣體相同。 第1處理氣體供給系統1〇Α之噴出流量僅相對減小未混合 流速調即用氣體之部分，第2處理氣體供給系統ι〇Β之噴出 流量僅相對增大流速調節用氣體之混合部分。另一方面， 第1處理氣體供給系統1〇Α之噴出部59A之孔徑、與第2處 理氣體供給系統10B之喷出部59B之孔徑彼此相等。因 φ 此自第1處理氣體供給系統10A之喷出流速相對較小。自 第2處理軋體供給系統丨〇 A之噴出流速相對較大。 支持部20上連接有移動機構22。省略詳細圖示，移動機 構22例如包括馬達等之驅動部、以及利用該驅動部而前進 /倒退之滑動部，支持部2〇連接於滑動部上。藉由移動機 構22，支持部20在與第i處理氣體之喷出部59a相對向之第 1位置（圖6之實線）、和與第2處理氣體之喷出部59B相對向 之第2位置（圖6之兩點鏈線）之間移動。 Φ 於第1蝕刻步驟中，藉由移動機構22而使支持部2〇位於 第1位置。藉此，自第丨處理氣體供給系統丨噴出之第1處 理氣體與被處理物9〇相接觸。該第i處理氣體之噴出流速 . 以及在被處理物90上之流速相對較小。因此，在被處理物 . 90之表面容易形成適度厚度之水的冷凝層，可提高含矽膜 93之餘刻速率。 於3石夕膜93之大部分被钱刻之時間點，藉由移動機構u 而使支持部20自第1位置移動至第2位置。藉此，可幾乎不 耽誤時間地自第1蝕刻步驟過渡至第2蝕刻步驟。於第2蝕 139030.doc -33- 201013775 刻步驟中’自第2處理氣體供給系統10B喷出之第2處理氣 體與被處理物90相接觸。 該第2處理氣體之噴出流速以及在被處理物9〇上之流速 大於上述第1處理氣體供給系統10A之氣體流速。因此，可 使水分自被處理物90之表面飛散，可抑制在被處理物90之 表面形成水的冷凝層。因此，可增大矽相對於氮化矽之選 . 擇比’可抑制基礎膜92之過度蝕刻，並且可選擇性地蝕刻 殘膜93a。 移動機構22構成切換機構，選擇性地對將處理氣體吹附 ❿ 於被處理物90上之處理氣體供給系統10A、1〇b進行切 換。 至於支持部20之移動速度、第1蝕刻步驟中所使用之處 理氣體供給系統10之數量’係預先藉由實驗而確定為於第 1蚀刻步驟中使基礎膜92露出’或使殘存於基礎膜92上之 含矽膜93之厚度達到極薄。 亦可使移動機構22與喷出部59A ' 59B相連接而非與支 持部20相連接’從而使噴出部59A、59B移動，來代替使 ® 支持部20在第1位置與第2位置之間移動，藉此，於第1蝕 刻步驟中，使喷出部59A與支持部20相對向，於第2蝕刻步 驟中，使喷出部59B與支持部20相對向。 第6實施形態 如圖7所示，於第6實施形態中，被處理物94為連續片材 狀。將連續片材狀之被處理物94自抽出輥23中抽出，捲取 於捲取輥24上。在輥23、24之間的被處理物94之背面側設 139030.doc -34- 201013775 置有加熱部21。 在輥23、24之間的靠近抽出輥23 视义位置上，配置有第1 處理氣體供給系統10A之喷出部5qa . ^ 土 貝田〇丨59A。在輥23、24之間的 罪近捲取輕24之位置上’配置右楚7虚a &The first processing rolled body supply system 10A is different from the processing gas supply system 1A of the first and second embodiments (Fig. 3, Fig. 3) in that the flow rate adjusting gas supply unit 60 is not connected. Therefore, the flow rate adjustment gas (NO of the NO! process gas is not emitted from the i-th process gas supply system i〇a. The components and flow rate of the first process gas from the supply system 10A, and the second embodiment, the second embodiment The second processing gas supply system 10B has the same configuration as the processing gas supply system 1A of the second embodiment (Fig.). The flow rate of the second processing gas supply system 10B is the same as that of the second processing gas supply system 10B. The conditioning gas supply unit 6〇B is operated in the mixing mode. Therefore, the second processing gas including the flow rate adjusting gas (N2) is continuously ejected from the second processing gas supply system 1A. From the supply system i 〇b=第139030.doc -32- 201013775 2 The composition and flow rate of the processing gas are the same as those of the second processing gas in the second etching step of the second and second embodiments. The first processing gas supply system 1 The discharge flow rate only relatively reduces the portion of the unmixed flow rate adjustment gas, and the discharge flow rate of the second treatment gas supply system ι 仅 only relatively increases the mixing portion of the flow rate adjustment gas. The apertures of the discharge portion 59A of the processing gas supply system 1 and the apertures of the discharge portion 59B of the second processing gas supply system 10B are equal to each other. The discharge flow rate from the first processing gas supply system 10A is relatively high. The flow rate of the discharge from the second processing rolling stock supply system 丨〇A is relatively large. The moving mechanism 22 is connected to the support unit 20. The detailed description of the moving mechanism 22 includes a driving unit such as a motor and the like. The support portion 2 is connected to the slide portion, and the support portion 20 is opposed to the first position of the ejecting portion 59a of the i-th processing gas by the moving mechanism 22 (Fig. 6 The line) moves between the second position (the two-point chain line of Fig. 6) with respect to the second processing gas discharge portion 59B. Φ In the first etching step, the support unit is moved by the moving mechanism 22. 2〇 is located at the first position, whereby the first processing gas ejected from the second processing gas supply system 接触 is in contact with the workpiece 9〇, the ejection flow rate of the i-th processing gas, and the processed object 90. The flow rate is relatively small. Therefore, it is being processed The surface of 90 is easy to form a condensation layer of water of a moderate thickness, which can increase the residual rate of the ruthenium-containing film 93. At the time when most of the 3 stone film 93 is engraved, the support portion is moved by the moving mechanism u 20 moves from the first position to the second position. Thereby, the transition from the first etching step to the second etching step can be performed almost without delay. In the second etching 139030.doc -33 - 201013775, the step is 'from the second The second processing gas discharged from the processing gas supply system 10B is in contact with the workpiece 90. The discharge flow rate of the second processing gas and the flow rate on the workpiece 9〇 are larger than the gas flow rate of the first processing gas supply system 10A. . Therefore, moisture can be scattered from the surface of the workpiece 90, and a condensation layer that forms water on the surface of the workpiece 90 can be suppressed. Therefore, the selection of ruthenium relative to tantalum nitride can be increased. The selection ratio can suppress excessive etching of the base film 92, and the residual film 93a can be selectively etched. The moving mechanism 22 constitutes a switching mechanism that selectively switches the processing gas supply systems 10A and 1b that blow the processing gas onto the workpiece 90. The moving speed of the support portion 20 and the number of the processing gas supply systems 10 used in the first etching step are determined in advance by experiments to expose the base film 92 in the first etching step or to remain in the base film. The thickness of the ruthenium containing film 93 on 92 is extremely thin. Instead of causing the ® support portion 20 to be between the first position and the second position, the moving mechanism 22 may be connected to the ejection portion 59A' 59B instead of the support portion 20 to move the ejection portions 59A, 59B. By this, in the first etching step, the discharge portion 59A faces the support portion 20, and in the second etching step, the discharge portion 59B faces the support portion 20. Sixth Embodiment As shown in Fig. 7, in the sixth embodiment, the workpiece 94 is in the form of a continuous sheet. The continuous sheet-like object to be treated 94 is taken out from the take-up roll 23 and taken up on the take-up roll 24. On the back side of the workpiece 94 between the rolls 23, 24, a heating portion 21 is provided 139030.doc - 34 - 201013775. The discharge portion 5qa of the first processing gas supply system 10A is disposed at a position close to the extraction roller 23 between the rollers 23 and 24. ^ 土贝田〇丨 59A. In the position between the rollers 23, 24, the sin is near the light 24, and the right circumstance is arranged.

夏有第2處理氧體供給系統1 〇B 之噴出部59B。In the summer, there is a discharge portion 59B of the second treatment oxygen supply system 1 〇B.

自抽出輥23中抽出之被處理物94,與來自第】處理氣體 供給系統10A之小流量、低速之第丨處理氣體相接觸。之 後，與來自第2處理氣體供給系統1〇B之大流量、高速之第 2處理氣體相接觸。藉此’可連續地自第心刻步驟過渡至 第2蝕刻步驟。抽出輥23及捲取輥以代替平台狀支持部2〇 而發揮被處理物支持部之功能。並且，抽出輥23及捲取輥 24構成切換機構，選擇性地對將處理氣體吹附於被處理物 90上之處理氣體供給系統10A、10B進行切換。 第7實施形態 處理氣體之流量及流速之變更並不限於2階段，亦可進 行3階段以上之變更。可於第i蝕刻步驟中分2階段以上來 變更氣體流量以及流速。亦可於第2姓刻步驟中分2階段以 上來變更氣體流量以及流速。 圖8係表示於第1敍刻步驟與第2钮刻步驟之整體中分3階 段來變更處理氣體之流量以及流速之實施形態的圖。 姓刻裝置1包括3個處理氣體供給系統10。要將該等3個 處理氣體供給系統1〇彼此區分開時，於第1階段（圖8中位 於左侧）之處理氣體供給系統10及其構成要素之符號後附 加上X，於第2階段（圖8中位於中央）之處理氣體供給系統 139030.doc -35- 201013775 10及其構成要素之符號後附加上γ ,於第3階段（圖8中位於 右側）之處理氣體供給系統10及其構成要素之符號後附加 上Z。第1階段與第2階段之處理氣體供給系統1〇χ、1〇γ構 成實行第1蝕刻步驟的第1處理氣體供給系統。最末階段 (第3階段）之處理氣體供給系統1〇ζ構成實行第2蝕刻步驟 的第2處理氣體供給系統。 第1階段之處理氣體供給系統1〇Χ之構成與第5實施形態 (圖6)及第6實施形態（圖7)之第丨處理氣體供給系統1〇Α相 同。亦即，處理氣體供給系統10χ上未連有接流速調節用 氣體供給部60。自第1處理氣體供給系統1〇Α喷出之處理氣 體中不包含流速調節用氣體（Ν2)，流量較小。 第2階段之處理氣體供給系統1〇γ之構成與第5、第6實施 形態（圖6、圖7)之第2處理氣體供給系統10Β相同，流速調 節用氣體供給部60Υ—直於混合模式下運行。只是，流速 調節用氣體之混合流量小於上述第2處理氣體供給系統1〇Β 之流速調節用氣體的混合流量。 第3階段（最末階段）之處理氣體供給系統丨〇ζ之構成與第 5、第6實施形態（圖6、圖7)之第2處理氣體供給系統1〇Β相 同’流速調節用氣體供給部60Υ —直於混合模式下運行。 流速調節用氣體之混合流量亦與上述第2處理氣體供給系 統10Β相同。 第3階段之流速調節用氣體供給部6〇ζ之流速調節用氣體 的混合流量較好的是，其為第2階段之流速調節用氣體供 給部60Υ之流速調節用氣體之混合流量的！倍〜4倍，更好的 139030.doc -36- 201013775 疋2倍〜3倍。 因此，越靠後之階段之處理氣體供給系統10的處理氣體 之噴出流量越大。 3個處理氣體供給系統10之喷出部59隔開間隔而排列成 一行。在該等喷出部59之下方設置有滾輪輸送機25。滾輪 輸送機25係延設於喷出部59之排列方向上。利用滾輪輸送 機25將被處理物90依序搬送至第1階段之喷出部$ 9χ之下 方、第2階段之喷出部59Υ之下方、第3階段之喷出部59Z 之下方。 滾輪輸送機25構成被處理物90之搬送機構及支持機構。 並且，滾輪輸送機25構成切換機構，選擇性地對將處理氣 體吹附於被處理物90上之處理氣體供給系統1〇進行切換。 滾輪輸送機25之移動速度、處理氣體供給系統1〇之數量 係預先藉由實驗加以確定。 [第1蚀刻步驟] 伴隨著滾輪輸送機25之搬送，被處理物9〇首先與來自第 1階段之處理氣體供給系統丨〇χ之處理氣體相接觸且受到蝕 刻。第1階段之處理氣體中未混合有流速調節用氣體 (Ν2)，被處理物90上之氣體流速相對較小。因此，可在被 處理物90之表面上形成所需且充分之厚度之冷凝層，可高 蝕刻速率地蝕刻矽93。於第丨階段之蝕刻中，含矽膜灼之 表面變得粗糙，呈凹凸狀態。底層之氮化矽膜92尚未露 出。 其次’被處理物90與來自第2階段之處理氣體供給系統 139030.doc -37- 201013775 10Y之處理氣體相接觸且受到㈣。第2階段之處理氣 混合有流速調節用氣體⑽。因此，第2階段之處理氣體 之流量大於第！階段，且被處理物9G上之氣體流速大於第】 階段。藉此，可使水分自被處理物9〇之表面上飛散，從而 使被處理物90之表面上之冷凝層的厚度小於第❿段時之 厚度。由此，可增大含矽膜93相對於基礎膜％之選擇比。 因此’當含石夕膜93之凹凸表面之凹陷部分到達與基礎膜％ 之界面時，可抑制基礎膜92被削去。 [第2蝕刻步驟] 接著，被處理物90與來自第3階段（最末階段）之處理氣 體供給系統ιοζ之處理氣體相接觸且受到蝕刻。第3階段之 處理氣體中所混合之流速調節用氣體（NJ的量多於第2階 段之（第1蝕刻步驟之最末階段）。因此，第3階段之處理氣 體之流量相較第2階段更大，被處理物9〇上之氣體流速相 較第2階段更大。藉此，可使水分充分地自被處理物之 表面上飛散，從而使被處理物9〇之表面上之冷凝層的厚度 相較第2階段更小。因此’可進一步增大含石夕膜93相對於 基礎膜92之選擇比。可使基礎膜92之過度蝕刻量(J(圖2(d)) 非常小’且可確實地去除斑點狀殘膜93 a。 第8實施形態 圖9係表示本發明之第8實施形態之圖。第8實施形態 中’將氧化性反應氣體代用作流速調節用氣體。 若加以詳述，第8實施形態之處理氣體供給系統1 0與第4 實施形態（圖5)同樣，包括氟系反應氣體供給系統33、及具 139030.doc -38 - 201013775 有臭氧產生器48之氧化性反應氣體供給系統35。與第*實 施形態不同之處在於，氟系反應氣體供給系統33中未連接 有作為流速調節機構之流速調節用氣體供給㈣。在氧化 性反應氣體供給系統35的連結氧系原料供給部抑臭氧產 生器48之管線上，設置有代替該流速調節用氣體供給韓 的氧化性反應氣體流量調節部61，來作為流速調節機構。 流量調節部6i由流量控制閥或質量流量控制器構成。流量 調節部㈣自氧系原料供給部34向臭氧產生器财供給之 氧系原料氣體（02)的流量進行調節，$而對來自臭氧產生 2 48之氧化性反應氣體（〇2 + 〇3)的供給氣體流量進行調 節。 亦可將流量調節部61設在較臭氧產生器條於下游 出管路52上。 [第1钱刻步驟] 第8實施形態之第！韻刻步驟實質上與第3及第作施形離 之第1韻刻步驟相同。於氟系反應氣體供給系統33中，將 加濕氟系原料氣體（CF4+Ar+H2〇)電漿化，生成氟系反應氣 體。亚行地，自氧化性反應氣體供給系統35之氧系原料供 給部34將氧系原料氣體（〇2)供給至臭氧產生器辦，利用 臭乳產生器48而生成氧化性反應氣體（〇2+〇3)。將該等氣 系反應氣體與氧化性反應氣體混合而獲得處理氣體。使嗜 處理氣體自噴出部53喷出且與被處理物9〇相接觸。於糾 敍刻步驟中’氟系反應氣體與氧化性反應氣體之體積混合 比例如較好的是氟系反應氣體：氧化性反應氣體七 139030.doc -39- 201013775 1〜1 : 2左右。 [第2钱刻步驟] 於第8實施形態之第2蝕刻步驟中，藉由流量調節部61， 使氧系原料氣體（〇2)、進而使氧化性反應氣體（〇2+〇3)之供 給流量大於第1蝕刻步驟。氟系反應氣體之供給流量較好 的是與第1蝕刻步驟相同。於第2蝕刻步驟中，氟系反應氣 體與氧化性反應氣體之混合比例如較好的是I夺反應氣 體.氧化性反應氣體=9: 5〜1 : 3左右，更好的是1 : 1〜1 · 2強左右。 藉由增大氧化性反應氣體之流量，處理氣體整體之流量 增大。藉此，處理氣體在被處理物9〇上之流速增大。因 此’水分容易自被處理物9〇之表面上飛散。藉此，與第i 實施形態相同地，可增大含矽膜93相對於基礎膜92之選擇 比。至於氟系反應氣體，藉由使其流量與第丨蝕刻步驟相 同，可抑制矽之蝕刻速率降低。其結果，可蝕刻速率良好 地且選擇性地蝕刻矽殘膜93a而將其去除，且可減小基礎 膜92之過度蝕刻量d。 ，第8實施形態中，由於氧化性反應氣體兼作流速調節 用氣體，因而不需要流速調節專用氣體（例如N2)。因此， 可減少所需之氣體種類。 .本《明並不限於上述實施形態，可在業者明瞭之範圍内 進行各種變更。 例如’作為㈣對象之含％膜93並不限於非晶梦亦可 為多晶矽、單晶矽。 139030.doc 201013775 作為蝕刻對象之含矽膜93並不限於 碳切、鹤切#。 ”為乳切、 體料象之切膜93為氧切之情”，處理氣 部3^乳化性反應成分。因此，可省略氧系原料供給The workpiece 94 extracted from the extraction roller 23 is brought into contact with the small-flow, low-speed second processing gas from the processing gas supply system 10A. Thereafter, it is brought into contact with the second processing gas having a large flow rate and a high speed from the second processing gas supply system 1B. Thereby, the transition from the first cardiac step to the second etching step can be continuously performed. The take-up roller 23 and the take-up roller function as a workpiece support portion instead of the platform-shaped support portion 2A. Further, the take-up roller 23 and the take-up roller 24 constitute a switching mechanism for selectively switching the processing gas supply systems 10A and 10B that blow the processing gas onto the workpiece 90. Seventh Embodiment The change in the flow rate and the flow rate of the process gas is not limited to two stages, and three or more stages may be changed. The gas flow rate and the flow rate can be changed in two or more stages in the i-th etching step. It is also possible to change the gas flow rate and the flow rate in two stages or more in the second surname step. Fig. 8 is a view showing an embodiment in which the flow rate and the flow rate of the processing gas are changed in three stages in the entire first step and the second button step. The surname device 1 includes three process gas supply systems 10. When the three process gas supply systems 1 are to be distinguished from each other, X is added to the process gas supply system 10 of the first stage (on the left side in FIG. 8) and the components thereof, in the second stage. (the central processing unit in Fig. 8) processing gas supply system 139030.doc -35- 201013775 10 and the symbols of its constituent elements are added with γ, and in the third stage (located on the right side in Fig. 8), the processing gas supply system 10 and Z is attached to the symbol of the constituent elements. The processing gas supply systems 1〇χ and 1〇γ of the first stage and the second stage constitute a first processing gas supply system that performs the first etching step. The processing gas supply system 1 of the last stage (third stage) constitutes a second processing gas supply system that performs the second etching step. The configuration of the processing gas supply system 1 of the first stage is the same as that of the fifth processing gas supply system 1 of the fifth embodiment (Fig. 6) and the sixth embodiment (Fig. 7). That is, the gas supply system 60 is not connected to the flow rate adjustment gas supply unit 60. The flow rate adjusting gas (?2) is not contained in the processing gas ejected from the first processing gas supply system (1), and the flow rate is small. The configuration of the processing gas supply system 1 〇 γ of the second stage is the same as that of the second processing gas supply system 10 第 of the fifth and sixth embodiments ( FIGS. 6 and 7 ), and the flow rate adjusting gas supply unit 60 Υ is directly connected to the mixing mode. Run below. However, the mixed flow rate of the flow rate adjusting gas is smaller than the mixed flow rate of the flow rate adjusting gas of the second process gas supply system 1A. The configuration of the processing gas supply system of the third stage (the last stage) is the same as that of the second processing gas supply system 1 of the fifth and sixth embodiments (Figs. 6 and 7). Department 60Υ—Runs directly in mixed mode. The mixed flow rate of the flow rate adjusting gas is also the same as that of the second processing gas supply system 10A. The mixing flow rate of the flow rate adjusting gas of the flow rate adjusting gas supply unit 6 of the third stage is preferably the mixed flow rate of the flow rate adjusting gas of the second-stage flow rate adjusting gas supply unit 60Υ! Times ~ 4 times, better 139030.doc -36- 201013775 疋 2 times ~ 3 times. Therefore, the discharge flow rate of the process gas of the process gas supply system 10 at the later stage is larger. The discharge portions 59 of the three process gas supply systems 10 are arranged in a row at intervals. A roller conveyor 25 is provided below the discharge unit 59. The roller conveyor 25 is extended in the direction in which the discharge portions 59 are arranged. The workpiece 90 is sequentially conveyed by the roller conveyor 25 to the lower portion of the discharge portion of the first stage, below the discharge portion 59 of the second stage, and below the discharge portion 59Z of the third stage. The roller conveyor 25 constitutes a conveying mechanism and a supporting mechanism of the workpiece 90. Further, the roller conveyor 25 constitutes a switching mechanism for selectively switching the processing gas supply system 1 that blows the processing gas onto the workpiece 90. The moving speed of the roller conveyor 25 and the number of processing gas supply systems 1 are determined in advance by experiments. [First etching step] With the conveyance of the roller conveyor 25, the workpiece 9 is first brought into contact with the processing gas from the processing gas supply system of the first stage and is etched. The flow rate adjusting gas (Ν2) is not mixed in the processing gas of the first stage, and the gas flow rate on the workpiece 90 is relatively small. Therefore, a desired and sufficient thickness of the condensation layer can be formed on the surface of the workpiece 90, and the crucible 93 can be etched at a high etching rate. In the etching of the second stage, the surface containing the ruthenium film is roughened and is in a concave-convex state. The underlying tantalum nitride film 92 has not been exposed. Next, the processed object 90 is brought into contact with the processing gas from the processing gas supply system 139030.doc -37 - 201013775 10Y of the second stage and subjected to (d). The processing gas of the second stage is mixed with the gas for adjusting the flow rate (10). Therefore, the flow rate of the process gas in the second stage is greater than the first! At the stage, the gas flow rate on the treated object 9G is greater than the first stage. Thereby, moisture can be scattered from the surface of the object to be treated 9 so that the thickness of the condensation layer on the surface of the object to be treated 90 is smaller than that at the time of the second step. Thereby, the selection ratio of the ruthenium-containing film 93 to the base film% can be increased. Therefore, when the depressed portion of the uneven surface of the stone-containing film 93 reaches the interface with the base film %, the base film 92 can be suppressed from being cut. [Second etching step] Next, the workpiece 90 is brought into contact with the processing gas from the processing gas supply system ιοζ of the third stage (the last stage) and is etched. The gas for adjusting the flow rate mixed in the processing gas of the third stage (the amount of NJ is larger than that of the second stage (the last stage of the first etching step). Therefore, the flow rate of the processing gas of the third stage is lower than that of the second stage. Further, the gas flow rate on the workpiece 9 is larger than that in the second stage, whereby the moisture can be sufficiently scattered from the surface of the object to be treated, so that the condensation layer on the surface of the object 9 is treated. The thickness is smaller than that of the second stage. Therefore, the selection ratio of the stone-containing film 93 to the base film 92 can be further increased. The excessive etching amount of the base film 92 (J (Fig. 2(d)) can be made very small. The eighth embodiment of the present invention is shown in Fig. 9. In the eighth embodiment, the oxidizing reaction gas is used as a gas for adjusting the flow rate. Specifically, the processing gas supply system 10 of the eighth embodiment includes the fluorine-based reaction gas supply system 33 and the 139030.doc -38 - 201013775 ozone generator 48, similarly to the fourth embodiment (Fig. 5). Oxidizing reaction gas supply system 35. and the fourth embodiment In the fluorine-based reaction gas supply system 33, the flow rate adjustment gas supply (four) as the flow rate adjustment mechanism is not connected. The oxygen-containing reaction material supply system 35 is connected to the oxygen-based raw material supply unit to suppress the ozone generator 48. The flow rate adjustment unit 61 is provided as a flow rate adjustment unit instead of the flow rate adjustment gas supply unit 61. The flow rate adjustment unit 6i is composed of a flow rate control valve or a mass flow controller. The flow rate adjustment unit (4) is an oxygen system. The raw material supply unit 34 adjusts the flow rate of the oxygen-based raw material gas (02) supplied from the ozone generator, and adjusts the flow rate of the supply gas from the oxidizing reaction gas (〇2 + 〇3) of the ozone generation 2 48. The flow rate adjusting unit 61 may be disposed on the downstream outlet line 52 of the ozone generator strip. [First Money Step] The eighth embodiment of the rhyme step is substantially different from the third and third embodiment. In the fluorine-based reaction gas supply system 33, the humidified fluorine-based source gas (CF4+Ar+H2〇) is plasma-formed to form a fluorine-based reaction gas. The oxygen-based raw material supply unit 34 of the reactive gas supply system 35 supplies the oxygen-based raw material gas (〇2) to the ozone generator, and generates the oxidizing reaction gas (〇2+〇3) by the malodor generator 48. The gas-based reaction gas is mixed with the oxidizing reaction gas to obtain a processing gas, and the process gas is ejected from the ejecting portion 53 and brought into contact with the object to be treated. In the rectifying step, the fluorine-based reaction gas and the oxidation are performed. The volume mixing ratio of the reactive gas is preferably, for example, a fluorine-based reaction gas: an oxidizing reaction gas of s. 139030.doc -39 - 201013775 1 to 1: 2 or so. [2nd step of engraving] In the etching step, the flow rate adjusting unit 61 causes the supply flow rate of the oxygen-based source gas (〇2) and the oxidizing reaction gas (〇2+〇3) to be larger than the first etching step. The supply flow rate of the fluorine-based reaction gas is preferably the same as that of the first etching step. In the second etching step, the mixing ratio of the fluorine-based reaction gas to the oxidizing reaction gas is preferably, for example, a reaction gas. The oxidizing reaction gas is about 9:5 to 1:3, more preferably 1:1. ~1 · 2 strong or so. By increasing the flow rate of the oxidizing reaction gas, the flow rate of the entire processing gas is increased. Thereby, the flow rate of the process gas on the workpiece 9 is increased. Therefore, water is easily scattered from the surface of the object to be treated. Thereby, the selection ratio of the ruthenium-containing film 93 to the base film 92 can be increased as in the i-th embodiment. As for the fluorine-based reaction gas, by making the flow rate the same as that of the second etching step, the etching rate reduction of the crucible can be suppressed. As a result, the ruthenium residual film 93a can be etched at a good rate and selectively etched to remove it, and the excessive etching amount d of the base film 92 can be reduced. In the eighth embodiment, since the oxidizing reaction gas also serves as the gas for adjusting the flow rate, a gas for flow rate adjustment (for example, N2) is not required. Therefore, the type of gas required can be reduced. The present invention is not limited to the above embodiment, and various modifications can be made within the scope of the applicant. For example, the % film 93 as the object of (4) is not limited to an amorphous dream, and may be polycrystalline germanium or single crystal germanium. 139030.doc 201013775 The ruthenium-containing film 93 to be etched is not limited to carbon cut and crane cut #. "For the milk cut, the film 93 of the body image is oxygen cut", and the gas component 3^ is emulsified. Therefore, the oxygen supply can be omitted.

^_對象之切膜93為碳切或碳氧切之情形 時，可藉由加熱操作將其等轉換為石夕，其 施形態相心^騎㈣。 ”上过實 基礎膜92並不限於氮切，只要是與作為敍刻對象之含 矽膜93不同之成分即可。 相對於非晶⑦等之切所構成之切膜93，基礎膜㈣ 可為氧化矽。 於作為蝕刻對象之含矽膜93為氧化矽之情形時，基礎膜 例如亦可為氮化矽。 於作為蝕刻對象之含矽膜93為碳化矽或碳氧化矽之情形 時，基礎膜92例如亦可為氮化矽或氧化矽。 根據基礎膜之成分等之不同，亦可減小處理氣體在被處 理物90上之流速，以隨著蝕刻之進行而增大矽相對於基礎 膜之選擇比。亦可使第2蝕刻步驟中之處理氣體流速小於 第1蝕刻步驟。可先減小處理氣體流速後，再使其增大。 亦可先增大處理氣體流速後，再使其減小。並不限於階段 性地改變處理氣體流速，亦可連續地改變（遞減或遞增）。 流速調節用氣體供給部6〇為混合模式時，可階段性地或 連續地改變流速調節用氣體（N2)之混合流量。 139030.doc • 41 . 201013775 為了改變處理氣體之流速’流速調節機構可代替於處理 氣體供給系統10中混合流速調節用氣體（NO、或者除了混 合流速調節用氣體（N2)以外’改變氟系原料氣體（CF4+Ar) 之流量’亦可改變氟系原料氣體中之稀釋氣體（Ar)之流 量’亦可改變氧系原料（〇2)之流量。 為了改變處理氣體之流速，流速調節機構亦可代替調節 氣體流量、或者除了調節氣體流量以外調節噴出部59之孔 徑°亦可對形成於喷出部59與被處理物90之間之氣體管路 之厚度（嘴出部59與被處理物90之間之距離）進行調節。 作為氟系原料’亦可代替CF4而使用C^F6、C3F6、C3F8# 之其他PFC(全氟碳），亦可使用CHf3、Ch2F2、CH3f等之 HFC(氣敦碳），亦可使用SF0、NF3、XeF2等之PFC及HFC以 外之含氟化合物。 作為稀釋氣體’亦可代替Ar而使用He、Ne、N2等之其 他惰性氣體。 ' 作為氧系原料，亦可代替〇2而使用N〇、N〇2、N2〇等之When the film 93 of the object is carbon cut or carbon-oxygen cut, it can be converted into a stone eve by a heating operation, and the form is symmetrical (four). The above-mentioned solid base film 92 is not limited to nitrogen cut, and may be a component different from the tantalum film 93 as a target to be described. The base film (4) may be formed on the cut film 93 formed by cutting the amorphous 7 or the like. In the case where the ruthenium-containing film 93 to be etched is ruthenium oxide, the base film may be, for example, tantalum nitride. When the ruthenium-containing film 93 to be etched is ruthenium carbide or ruthenium oxycarbide, The base film 92 may be, for example, tantalum nitride or tantalum oxide. Depending on the composition of the base film or the like, the flow rate of the processing gas on the workpiece 90 may be reduced to increase as the etching progresses. The selection ratio of the base film may also be such that the flow rate of the processing gas in the second etching step is smaller than the first etching step. The flow rate of the processing gas may be decreased first and then increased. Alternatively, the flow rate of the processing gas may be increased first. It is not limited to changing the flow rate of the process gas step by step, and may be continuously changed (decremented or incremented). When the flow rate adjustment gas supply unit 6 is in the mixed mode, the flow rate adjustment may be changed stepwise or continuously. Mixed with gas (N2) Flow rate 139030.doc • 41 . 201013775 In order to change the flow rate of the process gas, the flow rate adjustment mechanism can be used instead of the mixed flow rate adjustment gas (NO, or in addition to the mixed flow rate adjustment gas (N2) in the process gas supply system 10 The flow rate of the raw material gas (CF4+Ar) can also change the flow rate of the diluent gas (Ar) in the fluorine-based raw material gas. The flow rate of the oxygen-based raw material (〇2) can also be changed. In order to change the flow rate of the processing gas, the flow rate is adjusted. Instead of adjusting the gas flow rate, or adjusting the gas flow rate of the discharge portion 59 in addition to the gas flow rate, the mechanism may also adjust the thickness of the gas line formed between the discharge portion 59 and the workpiece 90 (the nozzle portion 59 and the The distance between the processed materials 90 is adjusted. As the fluorine-based raw material, other PFCs (perfluorocarbons) of C^F6, C3F6, and C3F8# may be used instead of CF4, and HFCs such as CHf3, Ch2F2, and CH3f may be used. (Gaden carbon), PFCs such as SF0, NF3, and XeF2, and fluorine-containing compounds other than HFC may be used. As the diluent gas, other inert gases such as He, Ne, and N2 may be used instead of Ar. As a raw material, it is also possible to use N〇, N〇2, N2〇, etc. instead of 〇2.

含氧化合物D 亦可使用含OH基之化合物來代替水（ho)。作為含〇11基 =化合物，可列舉雙氧水（Η"2)、或者乙醇或甲醇等之 2其中，於雙氧水之情形時，由於反應性較高而難以穩 疋也添加入氟系反應成分之氣體中。X，於醇之情形時， :於田將其導入至電漿中時碳成分(C)反應而生成有機聚 口物因而需要分解、去除該有機聚合物。因此，較好的 是可簡便且穩定地供給之H2〇。 139030.doc 201013775 亦了不使用電漿生成部44或臭氧產生器48來生成氧化性 反應成分，而將Os等之氧化性反應成分本身儲存在儲罐等 卜自該儲罐中取出氧化性反應m與氟系反應成分混 合0 於第3實施形態（圖4)及第4實施形態（圖5)中，亦可不混 合氟系反應氣體與氧化性反應氣體，而自相互獨立之喷出 部將其等吹出至被處理物上。 φ 自第1蝕刻步驟向第2蝕刻步驟切換之時間點並不限於基 礎膜92露出之階段，亦可設定為較基礎膜92露出稍靠前之 階段。 於°又置複數個處理氣體供給系統1〇，利用切換機構選擇 性地切換與被處理物9〇相對向之系統1〇之情形時處理氣 體供給系統10並不限於2個（第5、第6實施形態（圖6、圖7)) 或3個（第7實施形態（圖8))，亦可設置4個以上。 複數個處理氣體供給系統丨〇中，至少2個處理氣體供給 • 系統10之氣體流量及流速不同即可，並不限於複數個處理 氣體供給系統1 〇中之所有處理氣體供給系統丨〇之氣體流量 及流速於每1階段各不相同，亦可使複數個（3個以上）處理 . 氣體供給系統10中之一部分（2個以上）處理氣體供給系統1〇 之虱體流量及流速彼此相同。 於第7實施形態（圖8)中，亦可並設2個處理氣體供給系 統10X，使裝置1整體中設置有4個處理氣體供給系統1〇。 該結構適合於下述情形：含矽膜93之厚度較大，丨個處理 氣體供給系統10X可蝕刻之量未滿含矽膜93之厚度之一 139030.doc •43· 201013775 半。亦即，藉由設置2個處理氣體供給系統10X，可蝕刻速 率良好地將含矽膜93之一半以上或大部分蝕刻。其後，利 用處理氣體供給系統10Y增大矽之選擇比而進行蝕刻，繼 而’利用處理氣體供給系統1 〇Z進一步增大矽之選擇比而 進行姓刻。 根據含矽膜93之厚度之不同，亦可並設3個以上之處理 氣體供給系統1 〇χ。 於第7實施形態（圖8)中，亦可在第1階段之處理氣體供 給系統10X中亦設置流速調節用氣體供給部6〇。 亦可將複數種實施形態相互組合。例如，亦可與第1實 施形態（圖1)相同地，將第3〜第7實施形態（圖4〜圖8)之流速 調節用氣體供給部60連接於原料供給管線3〇上。 亦可與第3、第4實施形態（圖4、圖5)相同地，使第5〜第 7實施形態（圖6〜圖8)之各處理氣體供給系統1〇構成為以相 互獨立之路徑（route)來生成氟系反應成分與氧化性反應成 分。 於第8實施形態（圖9)中，亦可使用第3實施形態（圖句之 電漿生成部44來代替臭氧產生器48。 於第1、第2實施形態（圖〗、圖2)中，亦可與第8實施形 態相同地省略流速調節用氣體供給部的，而在氧系原料供 給部34與原料供給管線3G之連接管路上設置流量調節部Η ，代替該流速調節用氣體供給部6〇，將氧系原料氣體以及 氧化]·生反應成为代用作流速調節用氣體。於此情形時，要 注意隨著氧系原料氣體之流量變化而對電漿生成⑽中之 139030.doc 201013775 放電穩定性及氟系反應氣體之生成效率所造成的影響β 於第5、第6實施形態（圖6、圖7)中，亦可與第8實施形 態相同地省略處理氣體供給系統1 〇Β之流速調節用氣體供 給部60Β，而在氧系原料供給部34Β與原料供給管線3〇Β之 連接管路上設置流量調節部61來代替該流速調節用氣體供 給部60Β，將氧系原料氣體以及氧化性反應成分代用作流 速調節用氣體。於此情形時，要注意隨著氧系原料氣體之 流量變化而對電漿生成部40Β中之放電穩定性及氟系反應 氣體之生成效率所造成的影響。 於第7實施形態（圖8)中，亦可與第8實施形態相同地省 略處理氣體供給系統10Υ、10Ζ之流速調節用氣體供給部 60Υ、60Ζ，而在氧系原料供給部34γ、34ζ與原料供給管 線3 0Υ、3 0Ζ之各連接管路上設置流量調節部6丨來代替該 流速調節用氣體供給部60Y、60Z，將氧系原料氣體以及 氧化性反應成分代用作流速調節用氣體。於此情形時，要 注意隨著氧系原料氣體之流量變化而對電聚生成部、 40X之放電穩定性及氟系反應氣體之生成效率所造成的影 響。 亦可與第3、第4實施形態（圖4、圖5)相同地，使第5〜第 7實施形態（圖6〜圖8)之各處理氣體供給系統1〇構成為以相 互獨立之路徑來生成氟系反應成分與氧化性反應成分，並 且，亦可與第8實施形態（圖9)相同地，使處理氣體供給系 統10B、1〇χ、10Y構成為將氧化性反應成分代用作流速調 節用氣體》於此情形時，無論氧系原料氣體之流量如何變 139030.doc -45- 201013775 40Υ中之放電穩定 ，進而可抑制含矽 化，均可確保電漿生成部40b、40X、 性，可使氟系反應氣體之生成效率穩定 旗之叙刻速率變動。 本發明之_方法及_裝置除了可應用於由抗钱劑等 圖案化之被處理物的圖案_以外，亦可應用於對附著於 被處理物表面之包切之污染物質之去除、發晶圓或玻璃 之粗化部分之平坦化、矽晶圓或玻璃之表面或背 等中。 [實施例1] 以下說明實施例。本發明並不限於該實施例。 使用圖5之餘刻裝置，以第i钱刻步驟與第2餘刻步驟之2 階段對非騎媒進行㈣處理。基礎膜為氮切，使用在 該基礎膜上積層有非晶矽之樣品。 首先，進行第1蝕刻步驟。 使用CF4^U原料。使肠作為稀釋氣體。用^稀 釋CF4獲得氟系原料氣體（CF4+Ar卜混合比如以下所示。 CF4 : Ar=10 : 90 用市售之水分添加裝置於上述氟系原料氣體（CF4 + Ar)中 添加水分。水分量控制為使露點溫度為丨8它。 將流速調節用氣體供給部6〇設為停止模式。 使添加水之後之氟系原料氣體（CF4 + Ar + H2〇)在電漿生成 部40中電浆化’獲得氣系反應氣體。電漿放電條件如以下 戶斤示。 電極間間隔：1 mm 139030.doc -46- 201013775 電極間電壓：12 kV 電源頻率：40 kHz(脈衝波） 另將作為氧系原料氣體之％氣體導入至臭氧產生器中， 獲得氧化性反應氣體（〇2+〇3)。氧化性反應氣體之臭氧濃 度約為8%。The oxygen-containing compound D may also use an OH group-containing compound instead of water (ho). Examples of the oxime-containing group-containing compound include hydrogen peroxide (Η2) or ethanol or methanol. Among them, in the case of hydrogen peroxide, it is difficult to stabilize the gas and is added to the fluorine-based reaction component because of high reactivity. in. X, in the case of an alcohol, when the raw material is introduced into the plasma, the carbon component (C) reacts to form an organic polymer, and thus the organic polymer needs to be decomposed and removed. Therefore, it is preferable to supply H2 简便 simply and stably. 139030.doc 201013775 Also, the oxidative reaction component is generated without using the plasma generating unit 44 or the ozone generator 48, and the oxidative reaction component of Os or the like is stored in a storage tank or the like, and the oxidative reaction is taken out from the storage tank. m is mixed with the fluorine-based reaction component. In the third embodiment (Fig. 4) and the fourth embodiment (Fig. 5), the fluorine-based reaction gas and the oxidizing reaction gas may not be mixed, and the discharge portions independent of each other may be used. They are blown out onto the object to be treated. The timing at which φ is switched from the first etching step to the second etching step is not limited to the stage in which the base film 92 is exposed, and may be set to be slightly ahead of the base film 92. When the plurality of processing gas supply systems 1 are further disposed in the system, and the switching mechanism is used to selectively switch the system 1 to the workpiece 9A, the processing gas supply system 10 is not limited to two (5th, 6 Embodiments (Fig. 6, Fig. 7)) or 3 (Seventh Embodiment (Fig. 8)) may be provided in four or more. The gas flow rate and the flow rate of the at least two process gas supply systems 10 may be different in a plurality of process gas supply systems, and are not limited to the gases of all the process gas supply systems in the plurality of process gas supply systems 1 The flow rate and the flow rate are different for each stage, and a plurality of (three or more) processes may be performed. The gas flow rate and the flow rate of one part (two or more) of the gas supply systems 10 in the process gas supply system 1 are the same. In the seventh embodiment (Fig. 8), two processing gas supply systems 10X may be provided in parallel, and four processing gas supply systems 1A may be provided in the entire apparatus 1. This structure is suitable for the case where the thickness of the ruthenium containing film 93 is large, and the amount of etchable gas supplied from the processing gas supply system 10X is less than one of the thicknesses of the ruthenium containing film 139030.doc • 43· 201013775 half. That is, by providing the two processing gas supply systems 10X, one or more or most of the ruthenium-containing film 93 can be etched at a good etching rate. Thereafter, the processing gas supply system 10Y is used to increase the selection ratio of the crucible, and then the etching is performed, and the processing gas supply system 1 〇Z is further used to increase the selection ratio of the crucible. Depending on the thickness of the ruthenium containing film 93, three or more process gas supply systems 1 亦可 may be provided in combination. In the seventh embodiment (Fig. 8), the flow rate adjusting gas supply unit 6A may be provided in the processing gas supply system 10X of the first stage. A plurality of embodiments can also be combined with each other. For example, the flow rate adjusting gas supply unit 60 of the third to seventh embodiments (Figs. 4 to 8) can be connected to the raw material supply line 3A in the same manner as in the first embodiment (Fig. 1). Similarly to the third and fourth embodiments (Figs. 4 and 5), the processing gas supply systems 1 of the fifth to seventh embodiments (Figs. 6 to 8) can be configured to be independent paths. (route) to generate a fluorine-based reaction component and an oxidative reaction component. In the eighth embodiment (Fig. 9), the third embodiment (the plasma generating unit 44 of the figure can be used instead of the ozone generator 48. In the first and second embodiments (Fig. 2, Fig. 2) In the same manner as in the eighth embodiment, the flow rate adjusting gas supply unit may be omitted, and a flow rate adjusting unit Η may be provided in the connecting line between the oxygen-based material supply unit 34 and the raw material supply line 3G instead of the flow rate adjusting gas supply unit. 6〇, the oxygen-based raw material gas and the oxidation reaction are used as the gas for adjusting the flow rate. In this case, attention should be paid to the generation of the plasma in accordance with the flow rate of the oxygen-based raw material gas (10) 139030.doc 201013775 In the fifth and sixth embodiments (Figs. 6 and 7), the processing gas supply system 1 may be omitted in the same manner as the eighth embodiment. The flow rate adjusting gas supply unit 60 is provided with a flow rate adjusting unit 61 instead of the flow rate adjusting gas supply unit 60 in the connecting line between the oxygen-based raw material supply unit 34 and the raw material supply line 3, and the oxygen-based raw material gas is The oxidizing reaction component is used as a gas for adjusting the flow rate. In this case, attention is paid to the discharge stability in the plasma generating unit 40 and the production efficiency of the fluorine-based reaction gas as the flow rate of the oxygen-based material gas changes. In the seventh embodiment (Fig. 8), the flow rate adjusting gas supply units 60A and 60B of the processing gas supply systems 10A and 10B may be omitted in the same manner as the eighth embodiment, and the oxygen-based material supply unit 34γ may be used. In place of the flow rate adjusting gas supply units 60Y and 60Z, the flow rate adjusting unit 6 is provided in each of the connecting lines of the raw material supply lines 30 and 30, and the oxygen-based material gas and the oxidizing reaction component are used as the gas for adjusting the flow rate. In this case, attention should be paid to the influence of the flow rate of the oxygen-based material gas on the electropolymerization unit, the discharge stability of 40X, and the production efficiency of the fluorine-based reaction gas. In the same manner as in the embodiment (Fig. 4 and Fig. 5), each of the processing gas supply systems 1 to 5 of the fifth to seventh embodiments (Figs. 6 to 8) is configured to generate a fluorine-based reaction in a mutually independent path. In the same manner as in the eighth embodiment (Fig. 9), the processing gas supply systems 10B, 1A, and 10Y may be configured to use the oxidizing reaction component as a gas for adjusting the flow rate. In this case, regardless of the flow rate of the oxygen-based material gas, the discharge in the 139030.doc -45-201013775 40 稳定 is stable, and the deuteration can be suppressed, and the plasma generating portion 40b, 40X, and the fluorine-based system can be ensured. The generation efficiency of the reaction gas is stable and the rate of change of the flag is changed. The method and device of the present invention can be applied to the treatment of the object to be treated, in addition to the pattern of the object to be processed patterned by the anti-money agent or the like. The removal of contaminants from the surface of the object, the flattening of the roughened portion of the wafer or glass, the surface or back of the wafer or glass. [Example 1] Hereinafter, examples will be described. The invention is not limited to the embodiment. Using the lingering device of Fig. 5, the (4) processing is performed on the non-ridiculating medium in the second step of the i-th order and the second step of the second remaining step. The base film was nitrogen cut, and a sample having amorphous germanium laminated on the base film was used. First, the first etching step is performed. Use CF4^U raw materials. The intestine is used as a diluent gas. The fluorine-based raw material gas is obtained by diluting CF4 (CF4 + Ar is mixed as follows. CF4: Ar = 10: 90) Water is added to the fluorine-based raw material gas (CF4 + Ar) by a commercially available water adding device. The amount is controlled such that the dew point temperature is 丨 8. The flow rate adjusting gas supply unit 6 is set to the stop mode. The fluorine-based source gas (CF4 + Ar + H2 〇) after the addition of water is charged in the plasma generating unit 40. Slurry 'to obtain gas-reaction gas. Plasma discharge conditions are as shown below. Inter-electrode spacing: 1 mm 139030.doc -46- 201013775 Voltage between electrodes: 12 kV Power frequency: 40 kHz (pulse wave) The % gas of the oxygen-based source gas is introduced into the ozone generator to obtain an oxidizing reaction gas (〇2+〇3). The ozone concentration of the oxidizing reaction gas is about 8%.

將來自電漿生成部40之氟系反應氣體與來自電漿生成部 料之氧化性反應氣體混合而獲得第！處理氣體。氟系反應 氣體與氧化性反應氣體之體積混合比為1 : 1。 將被處理物90載置於平台2〇上，在其上方配置喷出部 M。一面自喷出部53喷出第1處理氣體，一面使喷出部” 以在被處理物90之一端至另—端為止之間往復的方式進行 移動（掃描）。移動速度設為4 m/min。將前進方向或返回方 向之單程移動作為1次掃描，進行18次掃描，結束第丨蝕刻 步驟。此時，在被處理物90之表面上殘存有〇 “Ο叫之 斑點狀之非晶矽93a(參照圖2(b)、（c))。 第1钱刻步驟之非晶輕之敍刻速率為1G」非 晶矽膜相對於氮化矽膜之選擇比約為1.3。 :繼而，進行第2蝕刻步驟。於第2蝕刻步驟中，將流速調 f用氣體供給部6〇設為混合模式。氟系反應氣體與流速調 即用氣體(N2)之混合比設為氟系反應氣體：流速調節用氣 體—2 . 3。嘴出部53之掃描次數設為#。第2飯刻步驟之 其他處理條件與第1蝕刻步驟相同。 藉由第2_㈣’可將殘麵W93a完全去除。 非 第2姓刻步驟之非晶石夕膜之㈣速率為8.6 nm/scan 139030.doc -47- 201013775 晶矽膜相對於氮化矽膜之選擇比約為2.3，高於第1蝕刻步 驟。因此，確認可使底層之氮化矽膜92之過度蝕刻減少。 [實施例2] 對流速調節用氣體與處理氣體之混合比、與非晶石夕相對 於氮化矽之選擇比的關係加以研究。與實施例1相同地使 用圖5之蝕刻裝置。處理氣體之原料成分及生成條件與實 施例1相同。於該處理氣體中混合氮氣（NO作為流速調節 用氣體，且改變氮氣之混合流量。測定非晶矽（a_Si)與氮 化梦（SiNx)之蝕刻速率，計算出非晶矽（a_Si)相對於氮化石夕 (SiNx)之選擇比。 結果不於圖10。如圖10所示，隨著流速調節用氣體（Nj 之混合比增大，非晶矽（a_si)之蝕刻速率與氮化矽（SiNx)之 蝕刻速率均一起降低，但氮化矽（SiNx)之蝕刻速率之降低 程度大於非晶矽（a-Si)。因此，隨著流速調節用氣體（1^)之 混合比增大，非晶矽（a_Si)相對於氮化矽（SiNx)之選擇比增 大。根據該結果可確認：於第2蝕刻步驟中，藉由將適當 量之流速調節用氣體混合於處理氣體中而使流速增大，可 抑制氮化矽膜92之過度蝕刻。 [實施例3] 使用圖9之㈣裝置，對將氧化性反應氣體代用作流速 調卽用氣體之情形時，氧化性反應氣體與氟系反應氣體之 混合比、與非晶則目對於氮化⑪之選擇比的關係加以研 究。 氟系反應氣體之原料成分及生成條件與實施例1相同。 139030.doc 201013775 其中’實施例3與實施之不同處在於不使用作為流速調 知用氣體之Ν2氣體。另外，與實施例【相同地，利用臭氧 產生益48生成由含臭氧之氣體（〇2+〇3)所構成之氧化性反 應氣體。改變氧化性反應氣體之流量，使氣系反應氣體與 氧化性反應氣體之體積混合比為2 : i〜丨：2。使氟系反應 氣體之流量固定。測定非晶矽（a_Si)與氮化矽（siNx)之蝕刻 * 速率，計算出非晶矽（a_Si)相對於氮化矽（SiNx)之選擇比。 φ 結果示於圖11。如圖11所示，隨著氧化性反應氣體之混 合比增大，非晶矽（a-Si)之蝕刻速率與氮化矽（SiNx)之蝕刻 速率均一起降低，但氮化矽（SiNx)之蝕刻速率之降低程度 大於非晶矽（a-Si)。因此，隨著氧化性反應氣體之混合比 增大，非晶矽（a-Si)相對於氮化矽（SiNx)之選擇比增大。根 據該結果而確認：於第2姓刻步驟中，藉由使氧化性反應 氣體之流量增加而使處理氣體之流速增大，可抑制氮化石夕 膜92之過度蝕刻。 φ [產業上之可利用性] 本發明可應用來製造例如平板顯示器（FPD，fiat panel display)或半導體晶圓。 • 【圖式簡單說明】 - 圖1係表示本發明之第1實施形態之概略構成的解說圖。 圖2(a)係蝕刻前之被處理物之剖面圖，圖2(b)係第1姓刻 步驟結束時之被處理物之平面圖，圖2(c)係圖2(b)之剖面 圖’圖2(d)係第2蝕刻步驟結束時之被處理物之平面圖。 圖3係表示本發明之第2實施形態之概略構成的解說圊。 139030.doc -49· 201013775 圖4係表示本發明之第3實施形態之概略構成的解說圖。 圖5係表示本發明之第4實施形態之概略構成的解說圖。 圖6係表示本發明之第5實施形態之概略構成的解說圖。 圖7係表示本發明之第6實施形態之概略構成的解說圖。 圖8係表示本發明之第7實施形態之概略構成的解說圖。 圖9係表示本發明之第8實施形態之概略構成的解說圖。 圖1 0係表示實施例2之結果之座標圖。 圖11係表示實施例3之結果之座標圖。 【主要元件符號說明】 蝕刻裝置The fluorine-based reaction gas from the plasma generating unit 40 is mixed with the oxidizing reaction gas from the plasma generating unit to obtain the first! Process the gas. The volume mixing ratio of the fluorine-based reaction gas to the oxidizing reaction gas is 1:1. The object to be processed 90 is placed on the stage 2, and the discharge portion M is placed above it. While the first processing gas is ejected from the ejecting portion 53, the ejecting portion is moved (scanned) so as to reciprocate between one end and the other end of the workpiece 90. The moving speed is set to 4 m/ Min. The single-pass movement in the forward direction or the return direction is performed as one scan, and 18 scans are performed to end the second etching step. At this time, a squeaky spot-like amorphous remains on the surface of the workpiece 90.矽93a (refer to Figs. 2(b) and (c)). The amorphous light etch rate of the first step is 1 G. The selection ratio of the amorphous film to the tantalum nitride film is about 1.3. : Then, a second etching step is performed. In the second etching step, the gas supply unit 6 is set to the mixing mode. The mixing ratio of the fluorine-based reaction gas to the flow rate adjustment gas (N2) is defined as a fluorine-based reaction gas: a gas for adjusting the flow rate - 2.3. The number of scans of the mouth portion 53 is set to #. The other processing conditions of the second meal step are the same as those of the first etching step. The residual surface W93a can be completely removed by the second_(four)'. The rate of the amorphous silicon film of the non-second surname step is 8.6 nm/scan 139030.doc -47- 201013775 The selection ratio of the germanium film to the tantalum nitride film is about 2.3, which is higher than the first etching step. Therefore, it was confirmed that excessive etching of the underlying tantalum nitride film 92 can be reduced. [Example 2] The relationship between the mixing ratio of the gas for adjusting the flow rate and the processing gas and the selection ratio of the amorphous phase to the tantalum nitride was examined. The etching apparatus of Fig. 5 was used in the same manner as in the first embodiment. The raw material components and production conditions of the processing gas were the same as in the first embodiment. The treatment gas is mixed with nitrogen gas (NO as a gas for adjusting the flow rate, and the mixed flow rate of nitrogen gas is changed. The etching rate of amorphous germanium (a_Si) and nitrided dream (SiNx) is measured, and the amorphous germanium (a_Si) is calculated relative to The selection ratio of nitriding cerium (SiNx) is not as shown in Fig. 10. As shown in Fig. 10, as the mixing ratio of the gas for flow rate adjustment (Nj increases, the etching rate of amorphous yttrium (a_si) and tantalum nitride ( The etching rates of SiNx) are all reduced together, but the etching rate of tantalum nitride (SiNx) is reduced more than that of amorphous germanium (a-Si). Therefore, as the mixing ratio of the gas for adjusting the flow rate (1^) increases, The selection ratio of the amorphous germanium (a_Si) to the tantalum nitride (SiNx) was increased. From the results, it was confirmed that in the second etching step, an appropriate amount of the gas for adjusting the flow rate was mixed in the processing gas. When the flow rate is increased, over-etching of the tantalum nitride film 92 can be suppressed. [Example 3] When the oxidizing reaction gas is used as a gas for gas flow rate adjustment using the apparatus of (4) of Fig. 9, the oxidizing reaction gas and fluorine are used. The mixing ratio of the reaction gas, and the amorphous phase for the nitriding 11 The raw material composition and production conditions of the fluorine-based reaction gas were the same as in Example 1. 139030.doc 201013775 wherein 'Example 3 differs from the embodiment in that Ν2 gas which is a gas for flow rate adjustment is not used. Further, in the same manner as in the embodiment, the oxidizing reaction gas composed of the ozone-containing gas (〇2+〇3) is generated by the ozone generating benefit 48. The flow rate of the oxidizing reaction gas is changed, and the gas-based reaction gas and oxidation are caused. The volume mixing ratio of the reactive gas is 2: i~丨: 2. The flow rate of the fluorine-based reaction gas is fixed. The etching rate of the amorphous germanium (a_Si) and the tantalum nitride (siNx) is measured, and the amorphous germanium is calculated. The ratio of a_Si) to tantalum nitride (SiNx). The result of φ is shown in Fig. 11. As shown in Fig. 11, the etching rate of amorphous germanium (a-Si) increases as the mixing ratio of the oxidizing reaction gas increases. The etching rate with tantalum nitride (SiNx) is reduced, but the etching rate of tantalum nitride (SiNx) is reduced to a greater extent than that of amorphous germanium (a-Si). Therefore, as the mixing ratio of the oxidizing reaction gas increases , amorphous yttrium (a-Si) relative to nitrogen The selection ratio of 矽(SiNx) is increased. According to the result, it is confirmed that in the second surging step, the flow rate of the processing gas is increased by increasing the flow rate of the oxidizing reaction gas, thereby suppressing the nitriding film 92. Over-etching. φ [Industrial Applicability] The present invention can be applied to manufacture, for example, a flat panel display (FPD) or a semiconductor wafer. • [Simple Description of the Drawings] - Fig. 1 shows the first aspect of the present invention. Fig. 2(a) is a cross-sectional view of the object to be processed before etching, and Fig. 2(b) is a plan view of the object to be processed at the end of the first surname step, Fig. 2(c) Fig. 2(b) is a plan view of Fig. 2(d) showing the object to be processed at the end of the second etching step. Fig. 3 is a view showing a schematic configuration of a second embodiment of the present invention. 139030.doc -49· 201013775 Fig. 4 is a view showing a schematic configuration of a third embodiment of the present invention. Fig. 5 is a view showing a schematic configuration of a fourth embodiment of the present invention. Fig. 6 is a view showing a schematic configuration of a fifth embodiment of the present invention. Fig. 7 is a view showing a schematic configuration of a sixth embodiment of the present invention. Fig. 8 is a view showing a schematic configuration of a seventh embodiment of the present invention. Fig. 9 is a view showing the schematic configuration of an eighth embodiment of the present invention. Figure 10 is a graph showing the results of the results of Example 2. Figure 11 is a graph showing the results of the results of Example 3. [Main component symbol description] Etching device

10、10A、10B 20 21 22 23 24 10X、10Y、10Z處理氣體供給系統 支持部 加熱部 移動機構 抽出輥 捲取輥 25 滾輪輸送機 30、 30A、30B、30X、30Y、30Z 原料供給管線 31、 31A、31B、31X、31Y、31Z 氟系原料供給部 32、 32A、32B、32X、32Y、32Z 添加部 33 氟系反應氣體供給系統 34、34A、34B、34X、34Y、34Z 氧系原料供給部 35 氧化性反應氣體供給系統 40、40A、40B、40X、40Y、40Z、 139030.doc -50- 201013775 44 電漿生成部 41、41A、41B、41X 、41Y、41Z、 45 電極 42、42A、42B、42X、 .42Y、42Z、 46 電源 43、43A、43B、43X、 43Y、43Z、 ‘ 47 電漿空間 48 • 臭氧產生器 50、50A ' 50B、50X、 50Y、50Z喷出管線 51 氟系喷出管路 52 喷出管路 53 共用喷出部 59、59A ' 59B、59X、 59Y、59Z喷出部 60、60B、60Y、60Z 流速調節用氣體供給部 61 流量調節部 0 90 ' 94 被處理物 91 基板 92 基礎膜 • 93 含矽膜 . 93a 殘膜 d 過度蝕刻量 139030.doc -51-10, 10A, 10B 20 21 22 23 24 10X, 10Y, 10Z process gas supply system support portion heating portion moving mechanism extraction roller take-up roller 25 roller conveyor 30, 30A, 30B, 30X, 30Y, 30Z raw material supply line 31, 31A, 31B, 31X, 31Y, 31Z fluorine-based raw material supply unit 32, 32A, 32B, 32X, 32Y, 32Z addition unit 33 fluorine-based reaction gas supply systems 34, 34A, 34B, 34X, 34Y, 34Z oxygen-based raw material supply unit 35 oxidizing reaction gas supply system 40, 40A, 40B, 40X, 40Y, 40Z, 139030.doc -50- 201013775 44 plasma generating portion 41, 41A, 41B, 41X, 41Y, 41Z, 45 electrodes 42, 42A, 42B , 42X, .42Y, 42Z, 46 power supply 43, 43A, 43B, 43X, 43Y, 43Z, '47 plasma space 48 • ozone generator 50, 50A ' 50B, 50X, 50Y, 50Z discharge line 51 fluorine spray Outlet line 52 discharge line 53 Common discharge unit 59, 59A '59B, 59X, 59Y, 59Z discharge unit 60, 60B, 60Y, 60Z Flow rate adjustment gas supply unit 61 Flow rate adjustment unit 0 90 ' 94 is processed Substrate 91 Substrate 92 Base film • 93 Antimony film. 93a Residual film d Excessive Engraved amount 139030.doc -51-

Claims (1)

201013775 七、申請專利範圍： 1. 一種切膜之㈣方法，其係對在基礎媒上積層有含石夕 膜之被處理物進行蝕刻者，其特徵在於： 使包含說系反應成分之處理氣體與上述被處理物相接 觸，並且， 根據钮刻之進展而改變上述處理氣體在被處理物上之 流速。 2·如請求項！之#刻方法，其中隨著㈣之進行而增大上 述流速。 3.如請求们之钱刻$法，纟中隨著飯刻之進行而階段性 地增大上述流速。201013775 VII. Patent application scope: 1. A method for cutting film (4), which is to etch a processed object containing a stone film on a basic medium, and is characterized in that: a processing gas containing a reaction component Contact with the above-mentioned object to be treated, and changing the flow rate of the above-mentioned processing gas on the object to be processed according to the progress of the button. 2. If requested! The method of engraving, wherein the above flow rate is increased as (4) proceeds. 3. If the money of the requester is engraved, the above-mentioned flow rate is gradually increased as the meal progresses. 如請求項1之蝕刻方法，其中於對上述含矽膜之應蝕刻 部分的大部分進行蝕刻期間（以下稱作「第丨蝕刻步 驟」）’使上述流速相對較小，於對上述含矽膜之應蝕刻 部分中的上述第1蝕刻步驟後所殘存之部分進行蝕刻期 間（以下稱作「第2蝕刻步驟」），使上述流速相對較大。 如請求項4之蝕刻方法，其中於上述第丨蝕刻步驟中階段 性地增大上述流速，並且使上述第2钱刻步驟中之上述 流速大於上述第1姓刻步驟之最末階段。 6·如請求項1之蝕刻方法，其中藉由改變上述處理氣體之 流量而改變上述流速。 7.如請求項1之蝕刻方法，其中 上述氟系反應成分係使包含氟系原料且添加有η2〇或 含ΟΗ基之化合物的氟系原料氣體通過大氣壓附近之電装 139030.doc 201013775 空間而生成’並且， 在較上述電漿空間之上游側，於上述氟系原料氣體中 混合流速調節用氣體或者停止混合，利用該流速調節用 氣體之流量以調節上述流速。 8.如請求項1之蝕刻方法，其甲 上述氟系反應成分係使包含氟系原料且添加有H2〇或 含OH基之化合物的氟系原料氣體通過大氣壓附近之電漿 空間而生成，並且， 在較上述電漿空間之下游側，於上述處理氣體中混合 流速調節用氣體或者停止混合，利用該流速調節用氣體 之流量以調節上述流速。 9·如請求項7或8之㈣方法，其中上述流速調節用氣體為 惰性氣體。 1如明求項6之蝕刻方法 上 述處理氣體包含氧化性反應氣體，並且， 藉由改變上述氧化性反應氣體之流量，而改變上述 理氣體之流量，進而改變上述流速。 11.=求項8之㈣方法，其中上述流速調節用氣體 化性反應氣體。 種切膜之㈣裝置，其係對在基礎膜上積層有含 膜之被處理物進行_者，其特徵在於包括： 處理體供給系統’其對上述被處理物供給包含 反應成分之處理氣體；以及 流速調節機構’其根據蝕刻之進展而改變上述處理 139030.doc 201013775 體在被處理物上之流速。 13.如請求項12之㈣裝置，其中上述流速調節機構隨著餘 刻之進行而增大上述流速。 μ.如請求項12之钮刻裝置，纟中上述流速調節機構隨著银 刻之進行而階段性地增大上述流速。 15.The etching method of claim 1, wherein during the etching of a majority of the portion to be etched of the ruthenium-containing film (hereinafter referred to as "the second etch step"), the flow rate is relatively small, and the ruthenium-containing film is used. The portion remaining after the first etching step in the portion to be etched is subjected to an etching period (hereinafter referred to as a "second etching step") to make the flow rate relatively large. The etching method of claim 4, wherein the flow rate is increased stepwise in the second etching step, and the flow rate in the second etching step is greater than the last stage of the first surname step. 6. The etching method of claim 1, wherein the flow rate is changed by changing a flow rate of the processing gas. 7. The etching method according to claim 1, wherein the fluorine-based reaction component is formed by passing a fluorine-based material gas containing a fluorine-based raw material and adding a compound of η2〇 or a thiol group to a space of 139030.doc 201013775 near atmospheric pressure. Further, on the upstream side of the plasma space, the flow rate adjusting gas is mixed with the fluorine-based source gas or the mixing is stopped, and the flow rate of the flow rate adjusting gas is used to adjust the flow rate. 8. The etching method according to claim 1, wherein the fluorine-based reaction component is formed by passing a fluorine-based material gas containing a fluorine-based raw material and adding a compound of H2 or an OH group to a plasma space near atmospheric pressure, and On the downstream side of the plasma space, the flow rate adjusting gas is mixed with the processing gas or the mixing is stopped, and the flow rate of the flow rate adjusting gas is used to adjust the flow rate. 9. The method according to claim 4, wherein the gas for adjusting the flow rate is an inert gas. An etching method according to claim 6, wherein the processing gas contains an oxidizing reaction gas, and the flow rate of the chemical gas is changed by changing a flow rate of the oxidizing reaction gas, thereby changing the flow rate. 11. The method of (4), wherein the gas flow rate adjusting gas is used for the flow rate adjustment. a device for cutting a film (4), which is characterized in that a processed object containing a film is laminated on a base film, the method comprising: a processing body supply system that supplies a processing gas containing a reaction component to the processed object; And a flow rate adjusting mechanism that changes the flow rate of the above-mentioned process 139030.doc 201013775 on the object to be processed according to the progress of the etching. 13. The apparatus of claim 4, wherein the flow rate adjusting mechanism increases the flow rate as the remainder progresses. μ. The buttoning device of claim 12, wherein the flow rate adjusting mechanism increases the flow rate stepwise as the silvering progresses. 15. 其中直至上述含矽膜之應蝕刻 ’上述流速調節機構使上述流 如請求項12之蝕刻裝置， 部分之大部分被蝕刻為止 速相對較小，蝕刻殘存之含矽臈時使上述流速相對較 大0 Μ.如請求項12之㈣裝置，其中上述流速調節機構對上述 處理氣體之流量進行調節。 17 ·如請求項12之蝕刻裝置，其中 上述處理氣體供給系統包括：電漿生成部，其形成大 氣壓附近之電漿空間；以及原料供給管線，其將形成上 述氟系反應成分的包含氟系原料且添加有Η2〇或含〇11基 φ 之化合物的氟系原料氣體，導入至上述電漿空間中；並 且， 上述流速調節機構於上述原料供給管線中混合流速調 節用氣體或者停止混合，利用該流速調節用氣體之流量 以調節上述流速。 18.如請求項12之蝕刻裝置，其中 上述處理氣體供給糸統包括：電毁生成部，其形成大 氣愿附近之電漿空間·，以及原料供給管線，其將形成上 述氟系反應成分的包含氟系原料且添加有Η2〇或含〇Η基 139030.doc 201013775 之化合物的氟系原料氣體，導入至上述電漿空間中；並且 上述流速調節機構於較上述電漿空間位於下游側之處 理氣體供給系統中混合流速調節用氣體、或者停止混 合’利用該流速調節用氣體之流量以調節上述流速。 19. 20. 21. 如請求項16之姓刻裝置，其中 上述處理氣體供給系統包括：氟系反應氣體供給系 統，其對上述被處理物供給含有上述氟系反應成分之氟 系反應氣體；以及氧化性反應氣體供給系統，其對上述 被處理物供給含有氧化性反應成分之氧化性反應氣體； 並且 上述流速調節機構對上述氧化性反應氣體供給系統之 供給氣體流量進行調節。 一種含矽膜之蝕刻裝置，其係對在基礎膜上積層有含矽 膜之被處理物進行蝕刻者，其特徵在於包括： 複數個處理氣體供給系統，其等噴出包含氟系反應成 分之處理氣體；以及 切換機構，其根據飯刻之進展，it擇性地對將處理氣 體吹附於Jl述被處理物上之處理氣體供給系統進行切 換；並且 來自上述複數個處理氣體供給系統中的至少2個處理 1體供給系統之處理氣體吹附於被處理物上時在被處理 物上之流速互不相同。 如明求項2G之姓刻裝置，其中上述切換機構隨著钱刻之 進仃選擇上述流速相對較大之處理氣體供給系統。 139030.doc 201013775 22. 如請求項20之蝕刻裝置’其中直至上述含矽膜之應蝕刻 部分之大部分被蝕刻為止，上述切換機構選擇上述流速 相對較小之處理氣體供給系統，蝕刻殘存之含矽膜時， 選擇上述流速相對較大之處理氣體供給系統。 23. 如明求項20之蝕刻裝置，其中上述複數個處理氣體供給 系統中，至少2個處理氣體供給系統之處理氣體的流量 * 互不相同。 攀 24.如請求項2〇之蝕刻裝置，其中 各處理氣體供給系統包括：電漿生成部’其形成大氣 壓附近之電漿空間，以及原料供給管線，其將形成上述 氟系反應成分的包含氟系原料且添加有H2〇或含〇H基之 化合物的氟系原料氣體，導入至上述電漿空間中；並 且， 於至少1個處理氣體供給系統之原料供給管線上，連 接有使流速調節用氣體匯流之流速調節用氣體供給部。 0 25.如請求項20之蝕刻裝置，其中 各處理氣體供給系統包括：電漿生成部，其形成大氣 壓附近之電漿空間，以及原料供給管線，其將形成上述 • 說系反應成分的包含氣系原料且添加有H2O或含OH基之 » 化合物的氟系原料氣體，導入至上述電漿空間中；並且 於至少1個處理氣體供給系統之較上述電漿空間位於 下游側之處理氣體供給系統上，連接有使流速調節用氣 體匯流之流速調節用氣體供給部。 26·如請求項17、18、24、25中任一項之蝕刻裝置，其令上 139030.doc 201013775 述流速調節用氣體為惰性氣體。 27_如請求項17、18、24、25中任一項之蝕刻裝置，其中上 述流速調節用氣體為氧化性反應氣體。Wherein, until the above-mentioned ruthenium-containing film is to be etched, the flow rate adjusting mechanism causes the flow to be etched as in the etching device of claim 12, and a part of the etching is relatively small, and the flow rate is relatively large when etching remains. The device of claim 4, wherein the flow rate adjusting mechanism adjusts a flow rate of the processing gas. The etching apparatus of claim 12, wherein the processing gas supply system includes: a plasma generating unit that forms a plasma space near atmospheric pressure; and a raw material supply line that forms a fluorine-containing raw material that forms the fluorine-based reaction component And a fluorine-based source gas to which a compound of Η2〇 or 〇11 group φ is added is introduced into the plasma space; and the flow rate adjusting means mixes the gas for adjusting the flow rate in the raw material supply line or stops mixing. The flow rate of the gas for adjusting the flow rate is adjusted to the above flow rate. 18. The etching apparatus of claim 12, wherein the processing gas supply system comprises: an electrical destruction generating unit that forms a plasma space adjacent to the atmosphere, and a raw material supply line that will form the fluorine-containing reaction component. a fluorine-based raw material and a fluorine-based raw material gas to which a compound containing ruthenium or ruthenium-containing 139030.doc 201013775 is introduced, and introduced into the above-mentioned plasma space; and the flow rate adjusting mechanism is disposed on the downstream side of the plasma space The flow rate adjusting gas is mixed in the supply system, or the mixing is stopped using the flow rate of the flow rate adjusting gas to adjust the flow rate. 19. The apparatus according to claim 16, wherein the processing gas supply system includes: a fluorine-based reaction gas supply system that supplies the fluorine-based reaction gas containing the fluorine-based reaction component to the workpiece; An oxidizing reaction gas supply system that supplies an oxidizing reaction gas containing an oxidizing reaction component to the workpiece, and the flow rate adjusting mechanism adjusts a flow rate of a supply gas of the oxidizing reactant gas supply system. An etching apparatus for a ruthenium-containing film, which is characterized in that a processed object containing a ruthenium-containing film is laminated on a base film, and is characterized by comprising: a plurality of processing gas supply systems for discharging a reaction component containing a fluorine-based reaction component a gas; and a switching mechanism that selectively switches the processing gas supply system that blows the processing gas onto the processed object according to the progress of the meal; and at least from the plurality of processing gas supply systems When the processing gases of the two processing 1-body supply systems are attached to the workpiece, the flow rates on the objects to be treated are different from each other. For example, the above-mentioned switching mechanism selects a processing gas supply system having a relatively large flow rate as the money is advanced. 139030.doc 201013775 22. The etching apparatus of claim 20, wherein the switching mechanism selects the processing gas supply system having a relatively small flow rate until the majority of the etching portion to be etched is etched, and the etching remains When the film is decimated, the processing gas supply system having the relatively large flow rate described above is selected. 23. The etching apparatus of claim 20, wherein the flow rates of the process gases of the at least two process gas supply systems are different from each other in the plurality of process gas supply systems. 24. The etching apparatus according to claim 2, wherein each of the processing gas supply systems includes: a plasma generating portion that forms a plasma space near atmospheric pressure, and a raw material supply line that forms fluorine containing the fluorine-based reaction component a fluorine-based source gas to which a raw material is added and a compound containing H2〇 or a ruthenium H group is introduced into the plasma space; and a flow rate adjustment is connected to a raw material supply line of at least one processing gas supply system A gas supply unit for adjusting the flow rate of the gas manifold. The etching apparatus of claim 20, wherein each of the processing gas supply systems comprises: a plasma generating portion that forms a plasma space near atmospheric pressure, and a raw material supply line that will form a gas containing the above-mentioned reaction components a fluorine-based material gas to which a raw material is added and H 2 O or an OH group-containing compound is introduced into the plasma space; and a processing gas supply system on a downstream side of the at least one processing gas supply system than the plasma space A gas supply unit for adjusting the flow rate for converging the flow rate adjusting gas is connected to the upper portion. The etching apparatus according to any one of claims 17, 18, 24 and 25, wherein the gas for adjusting the flow rate is 193030.doc 201013775. The etching apparatus according to any one of claims 17, 18, 24, and 25, wherein the gas for adjusting the flow rate is an oxidizing reaction gas. 139030.doc139030.doc
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