TW201010133A - Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof - Google Patents

Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof Download PDF

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Publication number
TW201010133A
TW201010133A TW097133011A TW97133011A TW201010133A TW 201010133 A TW201010133 A TW 201010133A TW 097133011 A TW097133011 A TW 097133011A TW 97133011 A TW97133011 A TW 97133011A TW 201010133 A TW201010133 A TW 201010133A
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TW
Taiwan
Prior art keywords
light
emitting diode
substrate
photoresist layer
emitting
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TW097133011A
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English (en)
Chinese (zh)
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TWI472052B (enExample
Inventor
Ming-Yan Chen
Feng-Kuan Chen
Yue-Xia Qiu
xiao-wen Wu
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Genius Electronic Optical Co Ltd
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Priority to TW097133011A priority Critical patent/TW201010133A/zh
Publication of TW201010133A publication Critical patent/TW201010133A/zh
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Publication of TWI472052B publication Critical patent/TWI472052B/zh

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TW097133011A 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof TW201010133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW097133011A TW201010133A (en) 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097133011A TW201010133A (en) 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof

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TW201010133A true TW201010133A (en) 2010-03-01
TWI472052B TWI472052B (enExample) 2015-02-01

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TW097133011A TW201010133A (en) 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419374B (zh) * 2011-08-09 2013-12-11 Univ Chang Gung Production Method of Wafer Level Light Emitting Diode
TWI462327B (zh) * 2012-02-06 2014-11-21 Lite On Electronics Guangzhou 定位系統
CN112928193A (zh) * 2019-12-05 2021-06-08 美科米尚技术有限公司 发光二极管装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
TWI331415B (en) * 2007-02-14 2010-10-01 Advanced Optoelectronic Tech Packaging structure of photoelectric device and fabricating method thereof
TWM332939U (en) * 2007-09-21 2008-05-21 Kingbright Electronic Co Ltd LED with silicon gel structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419374B (zh) * 2011-08-09 2013-12-11 Univ Chang Gung Production Method of Wafer Level Light Emitting Diode
TWI462327B (zh) * 2012-02-06 2014-11-21 Lite On Electronics Guangzhou 定位系統
CN112928193A (zh) * 2019-12-05 2021-06-08 美科米尚技术有限公司 发光二极管装置

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Publication number Publication date
TWI472052B (enExample) 2015-02-01

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