TW201010133A - Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof - Google Patents

Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof Download PDF

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Publication number
TW201010133A
TW201010133A TW097133011A TW97133011A TW201010133A TW 201010133 A TW201010133 A TW 201010133A TW 097133011 A TW097133011 A TW 097133011A TW 97133011 A TW97133011 A TW 97133011A TW 201010133 A TW201010133 A TW 201010133A
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TW
Taiwan
Prior art keywords
light
emitting diode
substrate
photoresist layer
emitting
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TW097133011A
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English (en)
Chinese (zh)
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TWI472052B (cg-RX-API-DMAC7.html
Inventor
Ming-Yan Chen
Feng-Kuan Chen
Yue-Xia Qiu
xiao-wen Wu
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Genius Electronic Optical Co Ltd
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Priority to TW097133011A priority Critical patent/TW201010133A/zh
Publication of TW201010133A publication Critical patent/TW201010133A/zh
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Publication of TWI472052B publication Critical patent/TWI472052B/zh

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TW097133011A 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof TW201010133A (en)

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TW097133011A TW201010133A (en) 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof

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Application Number Priority Date Filing Date Title
TW097133011A TW201010133A (en) 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof

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TW201010133A true TW201010133A (en) 2010-03-01
TWI472052B TWI472052B (cg-RX-API-DMAC7.html) 2015-02-01

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TW097133011A TW201010133A (en) 2008-08-28 2008-08-28 Method to fabricate the semiproduct, product, and encapsulant of LED by photolithography process, and semiproduct structure thereof

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419374B (zh) * 2011-08-09 2013-12-11 Univ Chang Gung Production Method of Wafer Level Light Emitting Diode
TWI462327B (zh) * 2012-02-06 2014-11-21 Lite On Electronics Guangzhou 定位系統
CN112928193A (zh) * 2019-12-05 2021-06-08 美科米尚技术有限公司 发光二极管装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6756186B2 (en) * 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
TWI331415B (en) * 2007-02-14 2010-10-01 Advanced Optoelectronic Tech Packaging structure of photoelectric device and fabricating method thereof
TWM332939U (en) * 2007-09-21 2008-05-21 Kingbright Electronic Co Ltd LED with silicon gel structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI419374B (zh) * 2011-08-09 2013-12-11 Univ Chang Gung Production Method of Wafer Level Light Emitting Diode
TWI462327B (zh) * 2012-02-06 2014-11-21 Lite On Electronics Guangzhou 定位系統
CN112928193A (zh) * 2019-12-05 2021-06-08 美科米尚技术有限公司 发光二极管装置

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Publication number Publication date
TWI472052B (cg-RX-API-DMAC7.html) 2015-02-01

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