TW201009408A - Optical waveguide, optical waveguide module, and optical element mounting substrate - Google Patents
Optical waveguide, optical waveguide module, and optical element mounting substrate Download PDFInfo
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- TW201009408A TW201009408A TW098107763A TW98107763A TW201009408A TW 201009408 A TW201009408 A TW 201009408A TW 098107763 A TW098107763 A TW 098107763A TW 98107763 A TW98107763 A TW 98107763A TW 201009408 A TW201009408 A TW 201009408A
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- optical waveguide
- core
- optical
- light
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
201009408 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種光波導、光波導模組及光元件安裝基 板0 【先前技術】 近年來’對於電子機器之小型化及高性能化之要求日益 提高。其中’為了應對信號之高速化,業界研究於電子零 件間藉由光信號進行連接,藉此實現電子機器内之信號傳 輸路徑之高速化。由於利用光信號進行連接,故而使用有 包含光配線與電氣配線之光電混載基板。光配線含有由芯 部與包覆部構成之光波導,藉由於光波導之芯部傳輸光而 傳遞光信號。 於包含光電混載基板之電子機器中,基板上搭載有複數 個電子零件。藉由光元件將某個電子零件之輸入輸出電信 號轉換成光信號後,使光波導傳輸該光信號。繼而,藉由 其他光元件將所傳輸之光信號恢復成電信號後,將該電信 號連接於其他電子零件。先前,於光電混載基板中,光波 導形成於硬板中,且光波導與硬板成一體化。例如,將光 元件與電子零件搭載於硬板上,使電信號自該等之搭載面 貫穿基板後’經由形成於相反側面上之電氣配線而傳輸, 又’光信號係自形成於基板中之光波導傳輸,並使該光信 號自該光波導貫穿絕緣層後將其傳輸至光元件之受發光部 (例如參照曰本專利特開2002-182049號公報)。於此種光電 混載基板中’由於光元件搭載於基板上,故而於光波導内 138984.doc 201009408 設置有用以使於光波導中進行傳輸之光相對於基板朝垂直 方向彎曲之鏡面(例如參照日本專利特開2〇〇2·ΐ82〇49號公 報、日本專利特開平10_300961號公報及曰本專利特開 2006-98798號公報)。 【發明内容】 然而,先前之設置於光波導中之鏡面係藉由自包覆層之 上進打切割加工、熱壓印加工、雷射加工等而形成,因此 包覆層之一部分完全缺失而導致芯部之鏡面暴露於周圍環 境中。暴露於周圍環境中之鏡面因塵埃或灰塵之附著而易 於受到污損,因此必需利用樹脂或絕緣層埋封其開口部。 但是,當芯部之鏡面與樹脂或絕緣層接觸時,相比於接觸 空氣之情形,鏡面與芯部之折射率差變小,結果導致反射 效率下降。又,由於先前之用以劃^鏡面之結構中,成為 於光波導中加人「凹口」之形狀’因此存在若光波導變形 則該鏡結構體之部分易於破損之問題。實際上,於將複數 根芯部以狹小之間隔多條配設之光波導中,存在因並列設 置鏡結構體而使「凹口」效果變得顯著,從而導致光波導 於鏡結構體之部分易於折斷之情形。 因此,本發明之目的在於提供一種包含新型之鏡結構之 光波導,該新型之鏡結構不會因塵埃或灰塵之附著而受到 污損,又,由鏡面所引起之反射損耗得到極力抑制,進而 亦不易成為變形時之破損基點。又,本發明之目的亦在於 較簡便地提供一種光配線之密度及自由度較高之小型化光 波導片材,該小型化光波導片材係將新穎之鏡結構體與複 138984.doc 201009408 2心部相交又之交叉型波導、或者進而將此種交叉型波 導夕層化者加以組合而成。進而,本發明之目的亦在於提 供一種包含此種光波導之光波導心及光元件安裝基板。 上述目的㈣由將下述⑴〜⑽作為構成之本發明 成。201009408 VI. Description of the Invention: [Technical Field] The present invention relates to an optical waveguide, an optical waveguide module, and an optical element mounting substrate 0. [Prior Art] In recent years, the requirements for miniaturization and high performance of electronic equipment have been made. Increasingly. Among them, in order to cope with the increase in the speed of signals, the industry has researched that optical signals are connected between electronic components, thereby realizing the speed of signal transmission paths in electronic devices. Since the optical signal is used for connection, an opto-electric hybrid board including optical wiring and electrical wiring is used. The optical wiring includes an optical waveguide composed of a core portion and a cladding portion, and transmits an optical signal by transmitting light from a core portion of the optical waveguide. In an electronic device including an opto-electric hybrid substrate, a plurality of electronic components are mounted on the substrate. After the input/output signal of an electronic component is converted into an optical signal by the optical component, the optical waveguide transmits the optical signal. Then, after the transmitted optical signal is restored to an electrical signal by other optical components, the electrical signal is connected to other electronic components. Previously, in an opto-electric hybrid substrate, optical waveguides were formed in a hard plate, and the optical waveguide was integrated with the hard plate. For example, the optical element and the electronic component are mounted on the hard board, and the electrical signal is transmitted through the substrate from the mounting surface, and then transmitted through the electrical wiring formed on the opposite side surface, and the optical signal is formed in the substrate. The optical waveguide transmits and transmits the optical signal from the optical waveguide to the light-receiving portion of the optical element (see, for example, Japanese Patent Laid-Open Publication No. 2002-182049). In such an opto-electric hybrid board, the optical element is mounted on the substrate. Therefore, in the optical waveguide, 138984.doc 201009408 is provided with a mirror surface for bending the light transmitted in the optical waveguide in the vertical direction with respect to the substrate (for example, refer to Japan). Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. SUMMARY OF THE INVENTION However, the mirror surface previously provided in the optical waveguide is formed by cutting, hot stamping, laser processing, etc. from the cladding layer, so that one part of the cladding layer is completely missing. Causes the mirror of the core to be exposed to the surrounding environment. The mirror surface exposed to the surrounding environment is easily stained by the adhesion of dust or dust, so it is necessary to embed the opening portion with a resin or an insulating layer. However, when the mirror surface of the core is in contact with the resin or the insulating layer, the difference in refractive index between the mirror surface and the core portion becomes smaller than in the case of contact with air, resulting in a decrease in reflection efficiency. Further, in the conventional structure for drawing the mirror surface, the shape of the "notch" is added to the optical waveguide. Therefore, if the optical waveguide is deformed, the portion of the mirror structure is easily broken. In fact, in the optical waveguide in which a plurality of core portions are arranged at a narrow interval, the effect of the "notch" becomes conspicuous due to the parallel arrangement of the mirror structure, thereby causing the optical waveguide to be part of the mirror structure. Easy to break. Accordingly, it is an object of the present invention to provide an optical waveguide including a novel mirror structure which is not stained by the adhesion of dust or dust, and which is highly suppressed by the reflection loss caused by the mirror surface. It is also not easy to become the breakage point at the time of deformation. Moreover, the object of the present invention is to provide a miniaturized optical waveguide sheet having a high density and a high degree of freedom of optical wiring, which is a novel mirror structure and a complex 138984.doc 201009408. 2 Cross-waveguides in which the cores intersect, or a combination of such cross-waveguides. Furthermore, it is an object of the invention to provide an optical waveguide core and an optical element mounting substrate including such an optical waveguide. The above object (4) is achieved by the following inventions having the following constitutions (1) to (10).
⑴-種光波導,其特徵在於:㈣由折料低於決定 光路方向之怒部之包覆層包圍該怒部而成者,於該芯部之 沿光路方向之特定之位置,設置有劃定鏡面之中空鏡結構 體’該鏡面係對朝該光波導入射之光或自該光波導出射之 光的光路進行轉換。 (2) 如上述(1)之光波導,其中該中空鏡結構體之高度與 該芯部之厚度相同或大於該芯部之厚度。 (3) 如上述(1)或(2)之光波導,其中於包含設置有該中 空鏡結構體之該特定之位置的同一光路内,在與該特定之 位置不同之位置設置有追加之中空鏡結構體。 (4) 如上述(1)至(3)中任一項之光波導,其中該中空鏡 結構體之鏡面相對於該光路方向成4〇〜5〇。之角度。 (5) 如上述(1)至(4)中任一項之光波導,其中該光路方 向係藉由該鏡面而相對於該光波導所劃定之平面轉換成大 致法線方向。 (6) 如上述(1)至(5)中任一項之光波導,其中該光波導 係將複數根芯部以狹小之間隔多條配設者,且該中空鏡結 構體係針對各該芯部而獨立地並列設置。 (7) 如上述(1)至(5)中任一項之光波導,其中該光波導 138984.doc 201009408 係將複數根芯部以狹小之間隔多條配設者,且該中空鏡結 構體係設置成橫跨兩根以上之該芯部之共通中空鏡結構 體。 (8) 如上述(1)至(5)中任一項之光波導,其中該光波導 係芯部分支之分支型光波導,於分支之各芯部之任意位置 設置有中空鏡結構體。 (9) 如上述(1)至(4)中任一項之光波導,其中該光路方 向係藉由該鏡面而於該光波導所劃定之平面内轉換。 (10) 如上述(9)之光波導’其中該光波導係複數根芯部 相交叉之交又型波導,且該中空鏡結構體係設置於該芯部 之交叉區域之至少一個區域中。 (11) 如上述(10)之光波導’其中該中空鏡結構體以使一 條光路於該交又區域中朝兩個方向分支之方式而設置。 (12) 如上述(10)之光波導,其中該中空鏡結構體以使一 條光路於該交又區域中朝三個方向分支之方式而設置。 (13) 如上述(10)至(12)中任一項之光波導,其中該交又 型波導係將該芯部經由包覆層而上下重疊兩根以上之多層 化交又型波導,且以將上下之芯部光連接之方式而配置之 中空鏡結構體係設置於特定之位置。 (14) 如上述(1〇)至(13)中任—項之光波導,其中該交又 型波導包含防干擾包覆結構,該防干擾包覆結構係於該交 又區域之外周部設置有折射率低於上述芯部之低折射區 域。 (15) 如上述(1)至(14)中任—項之光波導,其中該光波 138984.doc 201009408 導包含芯層及積層於該芯層之兩面上之包覆層,該芯層包 含決定光路方向之芯部與折射率低於該芯部之包覆部。 (16) 如上述(15)之光波導,其中該芯層及該包覆層係由 南分子材料而構成。 (17) 如上述(16)之光波導,其中該高分子材料包含以加 成聚合型降搐烯為主體之主鏈。 (18) —種光波導模組,其特徵在於:其係包含如上述 (1)至(8)及(15)至(17)中任一項之光波導與發光元件及/或受 光元件者,該中空鏡結構體與該發光元件及/或受光元件 以如下方式位置對準’即’使自該發光元件出射之光經由 该中空鏡結構體之鏡面而朝該光波導入射,且/或使自該 光波導出射之光經由該中空鏡結構體之鏡面而朝該受光元 件入射。 (19) 種光元件安装基板,其包含如上述(18)之光波導 模組與電路基板。 (20) 如上述(丨9)之光元件安裝基板,其中該光波導模組 含有接收結構,該接收結構用以於該發光元件及/或受光 元件之電極與該電路基板之電極之間提供導電。 根據本發明,藉由於光波導之芯部内設置劃定鏡面之中 空鏡結構邀,冑面不會暴露於周圍環境中,從而消除由塵 埃或灰塵之附著所引起之鏡面之污損。又,藉由使鏡面與 空氣接觸而充分地確保其與芯部之折射率差,且鏡面上之 反射知耗變得極其小。進而,藉由鏡結構為中空鏡結構 體’可不對光波導賦予「凹口」形狀,而提昇光波導之機 138984.doc 201009408 械強度。該機械強度之提昇於將複數根芯部以狹小之間隔 多條配設後並列設置鏡結構體之光波導之情形時,變得特 別顯著。又,根據本發明,藉由將新穎之鏡結構體與交叉 型波導或多層化交又型波導加以組合,可較簡便地提供一 種光配線之密度及自由度較先前之將光纖彎曲敷設之光波 導片材更高的小型化光波導片材。 【實施方式】 以下’ 一面適當地參照隨附圖式中所示之較佳之實施態 樣’一面對本發明之光波導、光波導模組及光元件安裝基 板進行詳細說明。 圖1表不本發明之光波導之基本構成。圖1(A)係表 折射率低於決定光路方向之芯部2之包覆層(上部包覆層 3、下部包覆層4)包圍該芯部2所形成之光波導i的部分立 體圖。圖1(A)所示之光波導丨例如曰本專利特開2_· 199827中所揭示般,可藉由於含有以特定之圖案配設之芯 部2之下部包覆層4的整個面上’藉由例如旋塗法形成上部 包覆層3而製造。作為本發明之光波導之基本構成之立他 態樣’ _表示包含芯層及積層於_之兩面上之包 覆層(上部包覆層3、下邱由爱t丄 圖,_包含決定1= 光波導1的部分立體 向之芯部2與折射率低於該芯 W之包覆43。以下’對用以於圖i(b)所示之類型之光波 導中實施本發明之最佳之形態進行詳細的說: 之實施並不限定於此種類型之光波導。 仁本發月 圖2係表示光波導中 導中之劃疋鏡面之先前結構之—例的模 138984.doc 201009408 式圖。圖2表示如下之橫剖面,即例如於圖1(B)中沿線B_B, 進订切割般’沿決定光路方向之芯部12對光波導10進行切 割所獲得之橫剖面。光波導丨〇包含對相對於光路方向成大 約45。之角度之鏡面進行劃定的鏡結構體14。藉由該鏡 面’將自光波導10之面外透射上部包覆層丨丨朝光波導1〇之 心部12入射之光、或者自光波導1〇之芯部12透射上部包覆 層11朝光波導10之面外出射之光的光路[卩,相對於光波導 10所劃定之平面轉換成大致法線方向。圖2所示之鏡結構 體14藉由使下部包覆層13之一部分完全地(於上下方向貫 穿)缺失而形成。作為先前結構之其他例,亦存在使上部 包覆層11之一部分亦部分地或完全地缺失而形成之鏡結構 體(未圖示)。如圖2所示,若包覆層之一部分完全地缺失而 導致芯部12之鏡面一直暴露於周圍環境中,則鏡面易於因 塵埃或灰塵之附著而受到污損,因此通常鏡結構體丨4成為 由樹脂或絕緣層埋封之中實結構體。然而,若鏡面與樹脂 或絕緣層接觸,則與接觸空氣(折射率^丨)之情形相比,鏡 面與芯部之折射率差變小,結果導致反射效率下降。又, 由於包覆層之一部分完全地缺失之結構變成於光波導中加 入「凹口」之形狀,故而若光波導變形,則應力集中於該 鏡結構體’而導致光波導易於破損。 圖3係表示光波導中之劃定鏡面之本發明之中空鏡結構 體之一例的模式圖。圖3與圖2相同,表示沿決定光路方向 之芯部22對光波導20進行切割所獲得之橫剖面。光波導2〇 包含劃定鏡面的鏡結構體24,該鏡面相對於光路方向,較 138984.doc 201009408 好的是成40。〜50。之角度,更好的是成大約45。之角度。藉 由該鏡面,將自光波導20之面外透射上部包覆㈣朝光波 導光波導20之芯部22入射之光、或者自光波導2〇之芯部22 透射上部包覆層21朝光波導2〇之面外出射之光的光路^^卩, 相對於光波導20所劃定之平面轉換成大致法線方向。只要 將光路方向以貫穿上部包覆層之方式轉換成大致法線方 向,則本發明之中空鏡結構體之形狀並無限制。例如,本 發明之中空鏡結構體沿芯部之橫剖面除如圖3所示之等腰 二角形以外,亦可為直角三角形。又,中空鏡結構體之高 度通常只要於30〜80 μιη之範圍内即可,又,如圖3所示, 中空鏡結構體之高度除與包含芯部22之芯層之厚度大致相 同以外,亦可大於芯層之厚度。作為本發明之中空鏡結構 體之咼度大於芯層之厚度之情形,可列舉:如圖4(Α)所示 之中空鏡結構體34橫跨上部包覆層31、芯部32及下部包覆 層33之三層之態樣’如圖4(Β)所示之中空鏡結構體44橫跨 上部包覆層41及芯部42之兩層之態樣,以及如圖4(c)所示 之中空鏡結構體54橫跨芯部52及下部包覆層53之兩層的態 樣’任一種態樣均屬於本發明。 如圖3及圖4所示’由於本發明之中空鏡結構體24、34、 44、54藉由包覆層 21、23、31、33、41、43、51、53而完 全地密閉,因此不存在芯部22、32、42、52之鏡面因來自 周圍環境之塵埃或灰塵之附著而受到污損的情形。又,由 於本發明之中空鏡結構體24、34、44、54之内部充滿空氣 (折射率=1),因此鏡面與芯部22、32、42、52之折射率差 138984.doc -10· 201009408 變得足夠大,從而使反射損耗得到抑制。進而,、 明之中空鏡結構體24、34、44、54未對光波導 口」形狀,故而光波導之機械強度得以顯著提昇。 於實際之光波導中,如圖5(A)所示,有時將:數根芯部 62以狹小之間隔多條配設錢巾空鏡結構體64針對各怒部 而獨立地並列設置。即便於此種情形時,由於本發明^中 空鏡結構體不發揮「凹口」效果’因此光波導不會於中空(1) An optical waveguide characterized in that: (4) a wrap that is lower than a anger portion that determines a direction of an optical path surrounds the anger portion, and a predetermined position is provided at a position along the optical path of the core portion. A mirror-shaped hollow mirror structure that converts an optical path that is incident on the optical waveguide or light that is emitted from the optical waveguide. (2) The optical waveguide according to (1) above, wherein the hollow mirror structure has a height equal to or larger than a thickness of the core. (3) The optical waveguide according to (1) or (2) above, wherein in the same optical path including the specific position at which the hollow mirror structure is provided, an additional hollow is provided at a position different from the specific position Mirror structure. (4) The optical waveguide according to any one of (1) to (3) above, wherein the mirror surface of the hollow mirror structure is 4 〇 5 〇 with respect to the optical path direction. The angle. (5) The optical waveguide according to any one of (1) to (4) above, wherein the optical path direction is converted into a substantially normal direction with respect to a plane defined by the optical waveguide by the mirror surface. (6) The optical waveguide according to any one of (1) to (5) above, wherein the optical waveguide has a plurality of core portions arranged at a narrow interval, and the hollow mirror structure system is for each of the cores Partially and independently set up side by side. (7) The optical waveguide according to any one of (1) to (5) above, wherein the optical waveguide 138984.doc 201009408 is a plurality of cores arranged at a narrow interval, and the hollow mirror structure system A common hollow mirror structure is provided that spans two or more of the cores. (8) The optical waveguide according to any one of the above (1) to (5), wherein the branching optical waveguide of the optical waveguide core portion is provided with a hollow mirror structure at any position of each of the core portions of the branch. (9) The optical waveguide according to any one of (1) to (4) above, wherein the optical path direction is converted by the mirror surface in a plane defined by the optical waveguide. (10) The optical waveguide of the above (9) wherein the optical waveguide is a cross-waveguide in which a plurality of core portions intersect, and the hollow mirror structural system is disposed in at least one region of the intersection of the core portions. (11) The optical waveguide of the above (10), wherein the hollow mirror structure is disposed such that an optical path branches in the opposite direction in two directions. (12) The optical waveguide of (10) above, wherein the hollow mirror structure is disposed such that an optical path branches in three directions in the intersection. (13) The optical waveguide according to any one of (10) to (12), wherein the cross-connected waveguide overlaps the core by two or more layers of the cross-linked waveguide via the cladding layer, and The hollow mirror structure system arranged such that the upper and lower cores are optically connected is placed at a specific position. (14) The optical waveguide of any of (1) to (13), wherein the cross-waveguide includes an interference-preventing cladding structure, the interference-preventing cladding structure being disposed at a periphery of the intersection and the region There is a low refractive index having a lower refractive index than the above core. (15) The optical waveguide of any of (1) to (14) above, wherein the light wave 138984.doc 201009408 includes a core layer and a cladding layer laminated on both sides of the core layer, the core layer including the decision The core portion in the direction of the optical path and the cladding portion having a lower refractive index than the core portion. (16) The optical waveguide according to (15) above, wherein the core layer and the cladding layer are composed of a south molecular material. (17) The optical waveguide according to (16) above, wherein the polymer material comprises a main chain mainly composed of addition polymerization type norbornene. (18) An optical waveguide module comprising the optical waveguide and the light-emitting element and/or the light-receiving element according to any one of (1) to (8) and (15) to (17) above The hollow mirror structure is aligned with the light-emitting element and/or the light-receiving element in such a manner that light emitted from the light-emitting element is incident on the optical waveguide through the mirror surface of the hollow mirror structure, and/or Light emitted from the light wave is incident on the light receiving element via the mirror surface of the hollow mirror structure. (19) A light element mounting substrate comprising the optical waveguide module and the circuit substrate of the above (18). (20) The optical component mounting substrate of the above (丨9), wherein the optical waveguide module includes a receiving structure for providing between the electrode of the light emitting component and/or the light receiving component and the electrode of the circuit substrate Conductive. According to the present invention, the facet is not exposed to the surrounding environment by the arrangement of the mirrored hollow mirror structure in the core of the optical waveguide, thereby eliminating the specular contamination caused by the adhesion of dust or dust. Further, by bringing the mirror surface into contact with the air, the difference in refractive index between the core and the core portion is sufficiently ensured, and the reflection sensitivity on the mirror surface is extremely small. Further, the mirror structure is a hollow mirror structure, and the optical waveguide can be lifted without giving a "notch" shape to the optical waveguide. This mechanical strength is particularly remarkable when the plurality of core portions are arranged in a plurality of intervals at a narrow interval and the optical waveguides of the mirror structure are arranged side by side. Moreover, according to the present invention, by combining the novel mirror structure with the cross-waveguide or the multi-layered cross-waveguide, it is relatively simple to provide a light having a density and a degree of freedom in which the optical fiber is bent and laid. The waveguide sheet has a higher miniaturized optical waveguide sheet. [Embodiment] Hereinafter, an optical waveguide, an optical waveguide module, and an optical element mounting substrate of the present invention will be described in detail with reference to the preferred embodiment shown in the drawings. Fig. 1 shows the basic constitution of the optical waveguide of the present invention. Fig. 1(A) is a partial perspective view showing the optical waveguide i formed by the cladding layer (the upper cladding layer 3 and the lower cladding layer 4) having a refractive index lower than that of the core portion 2 which determines the optical path direction. The optical waveguide shown in Fig. 1(A), for example, as disclosed in the Japanese Patent Laid-Open Publication No. Hei. No. 199827, may be incorporated by the entire surface of the lower cladding layer 4 of the core portion 2 which is disposed in a specific pattern. It is produced by forming the upper cladding layer 3 by, for example, spin coating. As a basic constitution of the optical waveguide of the present invention, _ denotes a cladding layer including a core layer and a laminate layer on both sides (upper cladding layer 3, lower Qiu by love t丄 diagram, _ contains decision 1 = part of the solid core 2 of the optical waveguide 1 and a cladding 43 having a lower refractive index than the core W. The following is the best practice for implementing the invention in the optical waveguide of the type shown in Figure i(b) The mode is described in detail: the implementation is not limited to this type of optical waveguide. Figure 2 shows the former structure of the reticle mirror in the guide of the optical waveguide - 138984.doc 201009408 Fig. 2 shows a cross section obtained by cutting the optical waveguide 10 along the direction of the optical path in the direction of the optical path, for example, along the line B_B in Fig. 1(B). 〇 includes a mirror structure 14 that defines a mirror surface at an angle of about 45° with respect to the direction of the optical path. The mirror surface 'transmits the outer cladding layer from the surface of the optical waveguide 10 toward the optical waveguide 1 The light incident on the core 12 or the core 12 from the optical waveguide 1 transmits the upper cladding layer 11 toward the light The light path of the light emitted from the surface of the guide 10 is converted to a substantially normal direction with respect to the plane defined by the optical waveguide 10. The mirror structure 14 shown in Fig. 2 is partially completed by the lower cladding layer 13. The ground (through in the vertical direction) is formed by missing. As another example of the prior structure, there is also a mirror structure (not shown) in which one portion of the upper cladding layer 11 is partially or completely missing. It is shown that if one of the cladding layers is completely missing and the mirror surface of the core portion 12 is always exposed to the surrounding environment, the mirror surface is easily stained by the adhesion of dust or dust, and therefore the mirror structure body 4 is usually made of resin. Or the insulating layer is buried in the solid structure. However, if the mirror surface is in contact with the resin or the insulating layer, the difference in refractive index between the mirror surface and the core portion becomes smaller than that in the case of contact with air (refractive index), resulting in The reflection efficiency is lowered. Further, since the structure in which one part of the cladding layer is completely missing becomes a shape in which a "notch" is added to the optical waveguide, if the optical waveguide is deformed, stress is concentrated on the mirror structure' Fig. 3 is a schematic view showing an example of the hollow mirror structure of the present invention in which the mirror surface is defined in the optical waveguide. Fig. 3 is the same as Fig. 2, and shows the core portion 22 in the direction of the optical path to the optical waveguide 20. The cross section obtained by the cutting is performed. The optical waveguide 2 includes a mirror structure body 24 defining a mirror surface, which is 40 to 50. An angle of about 45. By the mirror surface, the outer surface of the optical waveguide 20 is transmitted through the upper cladding (4) to the light incident on the core portion 22 of the optical waveguide optical waveguide 20, or transmitted from the core portion 22 of the optical waveguide 2 The optical path of the light emitted from the upper cladding layer 21 toward the outside of the optical waveguide 2 is converted into a substantially normal direction with respect to the plane defined by the optical waveguide 20. The shape of the hollow mirror structure of the present invention is not limited as long as the direction of the optical path is converted into a substantially normal direction so as to penetrate the upper cladding layer. For example, the hollow mirror structure of the present invention may have a right-angled triangle in addition to the isosceles shape as shown in Fig. 3 along the cross section of the core. Further, the height of the hollow mirror structure is usually in the range of 30 to 80 μm, and as shown in FIG. 3, the height of the hollow mirror structure is substantially the same as the thickness of the core layer including the core portion 22, It may also be larger than the thickness of the core layer. As a case where the degree of twist of the hollow mirror structure of the present invention is larger than the thickness of the core layer, a hollow mirror structure 34 as shown in FIG. 4 (Α) straddles the upper cladding layer 31, the core portion 32, and the lower portion. The three-layered coating layer 33 has a hollow mirror structure 44 as shown in FIG. 4 (Β) across the two layers of the upper cladding layer 41 and the core portion 42, and as shown in FIG. 4(c). The aspect in which the hollow mirror structure 54 is shown across the two layers of the core 52 and the lower cladding layer 53 is within the scope of the invention. As shown in FIGS. 3 and 4, the hollow mirror structures 24, 34, 44, 54 of the present invention are completely sealed by the cladding layers 21, 23, 31, 33, 41, 43, 51, 53. There is no case where the mirror faces of the cores 22, 32, 42, 52 are stained by the adhesion of dust or dust from the surrounding environment. Further, since the inside of the hollow mirror structures 24, 34, 44, 54 of the present invention is filled with air (refractive index = 1), the refractive index difference between the mirror surface and the core portions 22, 32, 42, 52 is 138984.doc -10· 201009408 becomes large enough to suppress reflection losses. Further, since the hollow mirror structures 24, 34, 44, and 54 are not in the shape of the optical waveguide, the mechanical strength of the optical waveguide is remarkably improved. In the actual optical waveguide, as shown in Fig. 5(A), a plurality of the core portions 62 are arranged at a narrow interval, and the money towel empty mirror structure 64 is independently arranged in parallel for each of the anger portions. That is, in this case, since the hollow mirror structure of the present invention does not exert the "notch" effect, the optical waveguide is not hollow.
鏡結構體之部分易於折斷,又’如圖5(B)所示亦可形成 橫跨兩根以上之芯部72之共通中空鏡結構體74。此種中空 鏡結構體74之形成,尤其於採用切割加工或熱壓施加工之 情形時,可一次性地形成複數個鏡面因此具有製程上之 優點。 本發明之光波導如圖6所示,亦可為芯部82分支之分支 型光波導。於此情形時,可於分支之各芯部之任意位置設 置中空鏡結構體84。分支型光波導本身為公知之光波導, 於本發明中,例如可使用曰本專利特開2〇〇4_279637號公 報及日本專利特開2006_293171號公報中所揭示之光分波 型光波導,日本專利特開2006-330436號公報中所揭示之 光合波型光波導’以及該等之組合。關於分支型光波導之 製造方法,可參照上述各公開公報。 本發明之光波導可用作面發光型雷射(VCSEL,Vertical Cavity Surface Emitting Laser,垂直共振腔面射型雷射), 該面發光型雷射藉由於同一光路内之不同之兩個位置各設 置一個中空鏡結構體,並藉由一方之中空鏡結構體將自光 138984.doc •11 - 201009408 波導之面外透射上部包覆層朝光波導之芯部入射之光,朝 大致垂直方向彎曲後於芯部内進行傳輸,藉由他方之中空 鏡結構體將傳輸後之光朝大致垂直方向彎曲後自光波導之 芯部透射上部包覆層朝光波導之面外出射。藉由使用本發 明之光波導,可於電子零件間利用光信號進行連接,由此 可實現電子機器内之信號傳輸路徑之高速化。 本發明亦可應用於如圖7所示之使光路[卩於光波導9〇所 劃疋之平面内轉換之光波導。為了使光路於光波導所劃定 之平面内彎曲,亦可使用芯部彎曲之上述之分支型光波 導。然而,由於芯部之曲率半徑具有一定限制(下限值), 因此可藉由使用鏡結構體而達成光波導裝置之進一步小型 化。再者,圖7表示將光路LP轉換成大致直角方向之態 樣’光路LP之轉換角度並無限制,可於〇〜18〇度之範圍内 任意地設定,此點容易理解。 進而,本發明亦可應用於如圖8所示之複數根芯部92相 父叉之父又型波導90。於圖8所示之交叉型波導9〇中,將 怒部92配置成棋盤格狀《然而,芯部92之交叉結構並不限 定於如圖8所示之正交形。尤其,可藉由使芯部92之交又 角大於或小於90。(正交)’而任意地變更光之干擾比率。可 提供一種藉由將中空鏡結構體94適當地設置於交又型波導 90之芯部92之交叉區域之至少一個區域中,而能夠將一條 或兩條以上之光路LP分別朝任意之方向轉換之任意光路轉 換型(ubiquitous)光波導。以上述方式將交叉型波導與本發 明之中空鏡結構體加以組合之任意光路轉換型光波導,可 138984.doc •12- 201009408 更簡便地提供一種小型化光波導片材,與將曲率半徑有限 制之芯部或光纖彎曲敷設之先前之光波導片材相比,該小 型化光波導片材之光配線之密度及自由度更高。 於交叉型波導90之芯部92之交叉區域中,如圖9(A)所 示,能夠以使一條光路LP僅朝一個方向轉換之方式設置中A portion of the mirror structure is easily broken, and a common hollow mirror structure 74 spanning two or more core portions 72 can be formed as shown in Fig. 5(B). The formation of such a hollow mirror structure 74, particularly in the case of a cutting process or a hot press application, can form a plurality of mirrors at a time and thus has the advantage of a process. As shown in Fig. 6, the optical waveguide of the present invention may be a branched optical waveguide in which the core portion 82 branches. In this case, the hollow mirror structure 84 can be provided at any position of each of the core portions of the branch. The branched optical waveguide itself is a well-known optical waveguide. In the present invention, for example, an optical split-wave type optical waveguide disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. An optical-optical-type optical waveguide as disclosed in Japanese Laid-Open Patent Publication No. 2006-330436, and a combination thereof. For the method of manufacturing the branched optical waveguide, reference can be made to each of the above publications. The optical waveguide of the present invention can be used as a VCSEL (Vertical Cavity Surface Emitting Laser), which is used in two different positions in the same optical path. A hollow mirror structure is disposed, and the light incident from the outer surface of the waveguide 138984.doc •11 - 201009408 is transmitted toward the core of the optical waveguide by a hollow mirror structure, and is bent in a substantially vertical direction. After being transported in the core, the transmitted light is bent in a substantially vertical direction by the hollow mirror structure, and then transmitted from the core of the optical waveguide to the outer cladding to the outside of the optical waveguide. By using the optical waveguide of the present invention, optical signals can be connected between electronic components, whereby the signal transmission path in the electronic device can be increased. The present invention can also be applied to an optical waveguide which converts an optical path [in a plane in which the optical waveguide 9 疋 is drawn as shown in Fig. 7]. In order to bend the optical path in a plane defined by the optical waveguide, the above-described branched optical waveguide in which the core is bent may be used. However, since the radius of curvature of the core has a certain limit (lower limit value), further miniaturization of the optical waveguide device can be achieved by using the mirror structure. Further, Fig. 7 shows a state in which the optical path LP is converted into a substantially right-angle direction. The conversion angle of the optical path LP is not limited, and can be arbitrarily set within a range of 〇18 to 〇, which is easy to understand. Further, the present invention is also applicable to the parent-type waveguide 90 of the plurality of core portions 92 as shown in Fig. 8. In the cross-shaped waveguide 9A shown in Fig. 8, the anger portion 92 is arranged in a checkerboard pattern. However, the cross structure of the core portion 92 is not limited to the orthogonal shape as shown in Fig. 8. In particular, the angle of intersection of the cores 92 can be made greater or smaller than 90. (orthogonal)' arbitrarily changes the interference ratio of light. It is possible to provide one or more optical paths LP in any direction by appropriately arranging the hollow mirror structure 94 in at least one region of the intersection of the core portions 92 of the cross-waveguide 90. Any ubiquitous optical waveguide. Any of the optical path conversion type optical waveguides in which the cross-type waveguide and the hollow mirror structure of the present invention are combined in the above manner can provide a miniaturized optical waveguide sheet with a radius of curvature more easily, 138984.doc • 12-201009408 The density and degree of freedom of the optical wiring of the miniaturized optical waveguide sheet is higher than that of the previously limited core or the optical waveguide sheet to which the optical fiber is bent. In the intersection of the core portion 92 of the cross-type waveguide 90, as shown in Fig. 9(A), it is possible to set one optical path LP in only one direction.
空鏡結構體94。又,如圖9(B)所示,亦可藉由以將一條光 路上傳輸而來之光之一部分反射的方式設置中空鏡結構體 94,而將一條光路Lp分支成包含直進方向之兩個方向。進 而,如圖9(C)所示,亦可藉由設置將一條光路上傳輸而來 之光之一部分朝一個方向反射之中空鏡結構體94、以及將 所剩餘之光朝其他方向反射之追加之中空鏡結構體94,而 將-條光路LP分支成$包含直進方向之兩個方‘作為圖 9(B)所示之態樣與圖9(c)所示之態樣之組合,如圖所 示,亦可藉由設置將一條光路上傳輸而來之光之一部分朝 一個方向反射之中空鏡結構體94、以及將所剩餘之光之一 部分朝其他方向反射的追加之中空鏡結構體叫,而將一條 光路LP分支成包含直進方向之三個方向。 亦可藉由將複數個交又型料上下叠力口而將光路三維 化。於圖1〇中示意性地表示此種多層化交叉型波導之一 例。圖1G⑷係表示芯㈣經由層間包覆層%而上下重疊 :多層_化交又型波路之部分立體圖。圖示之雙層化 f又型波導包含兩片芯層,該0層包含決定光路方向之芯 部92、及折射率低於該芯部之包覆部%。於芯層間,為了 防止4部92之上下方向之干擾而配置有具有足夠厚度之層 138984.doc •13· 201009408 ]γ覆層95。具體而言’應將層間包覆層%之厚度設定成 曰μΠ1較好的疋設定成2 μιη以上。於芯層之最上部與 最下邙刀別配置有上部包覆層93與下部包覆層97。各芯層 ^成如圖8所示之交叉型波導。自Ρ,於各芯層中,於芯部 父又區域之至少一個區域中適當地設置中空鏡結構 體’藉此將—條或兩條以上之光路LP於平面内朝任意之方 向轉換為了將光路Lp三維化,能以對上下之芯部進行光 連接之方式而將如圖3所示之中空鏡結構體設置於特定之 位置。® 10(B)表示以對上下之芯部92進行光連接之方式 斤《X置之兩個中二鏡結構體94之一例。於此情形時,被一 方之中二鏡結構體94轉換成法線方向之光係貫穿層間包覆 層95。貫穿至位於上部或下部之其他芯部%中之光,被其 他中空鏡結構體94再次轉換成法線方向後而可於該芯部92 内進行傳播。為了減少貫穿層間包覆層95時之光損耗,業 者期望將層間包覆95之厚度設為1G㈣以下,較好的是設 為5 μηι以下。圖示之多層化交又型波導之芯層為兩片,但 芯層之積層數並無限制,可根據用途而自由設計。藉由將 以上述方式而多層化之任意光路轉換型光波導與本發明之 中空鏡結構體加以組合,而可提供一種光配線之密度及自 由度更高之光波導片材。 於如圖8〜圖10所示之交叉型波導中,存在如下問題, 即,於某光路上傳輸而來之光之一部分於交又區域中進入 所交又之其他光路中之干擾的問題、或者透射所交又之其 他光路之側面而散射之光損耗的問題。作為減輕、消除上 J38984.doc 201009408 述問題之方法’已知有採用於交叉型波導之交叉區域之外 周邛设置折射率低於芯部之低折射區域的防干擾包覆結 構。圖11表示包含此種防干擾包覆結構之交叉型波導之一 例。如圖11所示,於交叉區域之外周部設置折射率低於芯 部之低折射區域的防干擾包覆結構,可藉由使芯部92於交 又區域92,之前後斷裂而形成,於此情形時,低折射區域之 折射率與周圍之包覆部相等。為了減少光損耗,業者期望 使芯部92斷裂之間隔(低折射區域之寬度)較好的是儘可能 地小’例如將該間隔設定為10 μιη以下’較好的是設定為5 μηι以下。另一方面,為了使光於交又區域92,之側面反 射’低折射區域必需具有固定之寬度,因此根據交叉區域 92'與低折射區域之折射率差,亦應將低折射區域之寬度設 定為至少1 μιη,較好的是設定為2 μη!以上。又,若低折射 區域之寬度固定,則芯部之寬度越狹小干擾越少。藉由設 置此種防干擾包覆結構,於芯部92之側面反覆反射後於光 路LP上傳輸而來之光同樣可於交叉區域92,之側面反射。 再者,圖11所示之交叉型波導90之芯部92之交叉結構為正 交形,但藉由設置防干擾包覆結構,即便使芯部92之交叉 角大於或小於90。(正交),干擾比率亦無變化。 上述之防干擾包覆結構若於製造光波導時使用適當之光 罩而形成,則較為便利。例如於下述之後照射法中,當形 成芯層時’使用如圖12(A)所示之含有光罩閉口部91、9Γ 之光罩’於芯部之交叉區域之外周部形成特定寬度之包覆 部’藉此可於形成芯層之同時形成防干擾包覆結構。如圖 138984.doc 201009408 务、外光,則光罩閉口部 跫到紫外光照射之區域 12(B)所示,若經由此種光罩照射 91、91’之下方形成芯部92、92,, 形成包覆部96(低折射區域卜Empty mirror structure 94. Further, as shown in FIG. 9(B), the hollow mirror structure 94 may be provided by partially reflecting one of the light transmitted from one optical path, thereby dividing one optical path Lp into two directions including the straight direction. direction. Further, as shown in FIG. 9(C), a hollow mirror structure 94 that reflects one of the light beams transmitted from one optical path in one direction and an additional reflection of the remaining light in other directions may be provided. The hollow mirror structure 94 branches the strip light path LP into two sides including the straight direction as a combination of the aspect shown in FIG. 9(B) and the aspect shown in FIG. 9(c), such as As shown, the hollow mirror structure 94 that reflects one of the light transmitted from one optical path in one direction and the additional hollow mirror structure that reflects one of the remaining light in other directions can also be provided. Calling, and splitting an optical path LP into three directions including a straight direction. The optical path can also be three-dimensionally formed by stacking a plurality of cross-over materials. An example of such a multilayered cross-type waveguide is schematically shown in Fig. 1A. Fig. 1G(4) shows a partial perspective view in which the core (4) is vertically overlapped by the inter-layer cladding layer %: a multi-layered_intersection-type wave path. The two-layered f-type waveguide includes two core layers including a core portion 92 that determines the direction of the optical path and a cladding portion % having a lower refractive index than the core portion. Between the core layers, a layer having a sufficient thickness is disposed in order to prevent interference of the upper and lower directions of the four portions 92. 138984.doc •13·201009408] γ-cladding layer 95. Specifically, the thickness of the interlayer coating layer % should be set to 曰μΠ1, and the enthalpy should be set to 2 μm or more. An upper cladding layer 93 and a lower cladding layer 97 are disposed on the uppermost portion of the core layer and the lowermost trowel. Each core layer is formed into a cross-type waveguide as shown in FIG. Self-deflending, in each core layer, a hollow mirror structure is appropriately disposed in at least one region of the core parent region, thereby converting the light strip LP or more than two optical paths in a plane to any direction in order to The optical path Lp is three-dimensional, and the hollow mirror structure shown in FIG. 3 can be placed at a specific position so as to optically connect the upper and lower core portions. ® 10 (B) shows an example in which two upper two mirror structures 94 are disposed in such a manner as to optically connect the upper and lower core portions 92. In this case, the light which is converted into the normal direction by the two-mirror structure 94 in one side penetrates the interlayer coating layer 95. Light that has penetrated into the other core portion % located at the upper or lower portion can be propagated in the core portion 92 after being converted into the normal direction by the other hollow mirror structure 94. In order to reduce the optical loss when the interlayer coating layer 95 is penetrated, it is desirable to set the thickness of the interlayer coating 95 to 1 G (four) or less, preferably 5 μηι or less. The core layer of the multilayered cross-linked waveguide shown in the figure is two sheets, but the number of layers of the core layer is not limited and can be freely designed according to the use. By combining any of the optical path conversion type optical waveguides which are multilayered in the above manner with the hollow mirror structure of the present invention, it is possible to provide an optical waveguide sheet having higher density and freedom of optical wiring. In the cross-type waveguide shown in FIG. 8 to FIG. 10, there is a problem that one of the light transmitted on a certain optical path partially enters the other optical path in the intersection and the other optical path, Or the problem of light loss that is scattered by transmitting the sides of the other optical paths that are intersected. As a method for alleviating and eliminating the problem described in the above-mentioned J38984.doc 201009408, it is known that an interference-preventing coating structure is provided which is disposed outside the intersection of the cross-shaped waveguide and has a lower refractive index lower than that of the core. Fig. 11 shows an example of a cross-type waveguide including such an interference preventing cladding structure. As shown in FIG. 11, the anti-interference coating structure having a lower refractive index than the low refractive region of the core is disposed on the periphery of the intersection region, and can be formed by causing the core portion 92 to be fractured before and after the region 92. In this case, the refractive index of the low refractive region is equal to the surrounding cladding portion. In order to reduce the light loss, it is desirable that the interval at which the core portion 92 is broken (the width of the low refractive region) is preferably as small as possible, for example, the interval is set to 10 μm or less. Preferably, it is set to 5 μη or less. On the other hand, in order to make the light reflect the side of the intersection area 92, the low refractive area must have a fixed width. Therefore, according to the refractive index difference between the intersection area 92' and the low refractive area, the width of the low refractive area should also be set. It is at least 1 μηη, preferably 2 μη! or more. Further, if the width of the low refractive region is fixed, the narrower the width of the core portion, the less the interference. By providing such an interference preventing coating structure, light which is reflected on the side surface of the core portion 92 and transmitted on the optical path LP can be reflected on the side surface of the intersecting region 92 as well. Further, the intersecting structure of the core portion 92 of the cross-type waveguide 90 shown in Fig. 11 is a Orthogonal shape, but by providing the interference-preventing covering structure, the crossing angle of the core portion 92 is made larger or smaller than 90. (Orthogonal), the interference ratio also did not change. It is convenient to use the above-described anti-interference coating structure by using an appropriate mask when manufacturing an optical waveguide. For example, in the subsequent irradiation method, when the core layer is formed, 'the mask having the mask closed portions 91 and 9' shown in Fig. 12(A) is used to form a specific width at the outer periphery of the intersection portion of the core portion. The cladding portion 'by this can form an interference-preventing cladding structure while forming the core layer. As shown in Fig. 138984.doc 201009408, the shutter is closed to the ultraviolet light irradiation region 12 (B), and the cores 92, 92 are formed under the illuminating 91, 91' through the reticle. , forming a cladding portion 96 (low refractive region)
=擾包覆結構除如上述之圖案化法以外亦可藉由如 =法形成’即’利用準分子雷射等對芯部之交又區域 、别後進行切削,然後於所切除之部分填充折射率調整 液’:如甘油(折射率為[叫。低折射區域之折射率必需 低^芯部之折射率,特別好的是與包覆部之折射率相同。 另方面,若低折射區域之折射率過低,則會產生費涅反 射伽snel reflecti()n)(由折射率之差異所引起之反射卜故 不佳。又’作為折射率之調整方法,亦可利用折射率因溫 度發生變化之現象即熱光效應(thermal_Gptieai咐⑽)、或 +施加電壓則折射率發生變化之現象即電光效應 (electro_〇Ptical effect)。 本發明之劃定鏡面之中空鏡結構體可藉由使光波導之芯 °P之一部分缺失而製作。於使芯部之一部分缺失時,可採In addition to the patterning method described above, the disturbing cladding structure may be formed by, for example, the method of using the excimer laser to cut the intersection of the core and then cutting, and then filling the cut portion. Refractive index adjusting solution ': such as glycerin (refractive index is [called. The refractive index of the low refractive region must be low; the refractive index of the core portion, particularly preferably the same as the refractive index of the cladding portion. On the other hand, if the refractive index is low refractive region If the refractive index is too low, the Fresnel reflection snel reflecti()n) will be generated (the reflection caused by the difference in refractive index is poor. And as the adjustment method of the refractive index, the refractive index due to the temperature can also be utilized. The phenomenon of change is the thermo-optic effect (thermal_Gptieai(10)), or the phenomenon that the refractive index changes when the applied voltage is applied, that is, the electro-optical effect (electro_〇Ptical effect). The hollow mirror structure of the mirror surface of the present invention can be used by It is made by deleting one part of the core of the optical waveguide °P. When one part of the core is missing, it can be taken
用例如日本專利特開平8-3 18386號公報中所揭示之雷射加 工法、例如曰本專利特開平10-300961號公報中所揭示之 切割加工法、例如曰本專利特開2006-98798號公報中所揭 示之壓印加工法等。 右對使用雷射加工法之中空鏡結構體之形成方法進行簡 早說明’則為如下:對光波導之芯部之一部分照射雷射, 使針對芯部之雷射之照射區域相對地變化,藉此使向芯部 之形成中空鏡結構體之部位照射雷射的時間部分地變化, I38984.doc •16· 201009408 然後調整雷射相對於芯部之深度方向之到達度,並且去除 芯部之構成材料,由此可形成中空鏡結構體。如此,由於 可藉由雷射之照射形成鏡面,故而可於任意之位置以任 意之圖案容易地形成中空鏡結構體。作為雷射,例如可列 舉ArF及KrF等準分子雷射、YAG雷射、c〇2雷射等。雷射 之照射能量根據"之構成材料而定,較好的是100〜1000 ' mJ/Cm2之範圍,特別好的是25〇〜700 mJ/cm2之範圍。若照 &能量處於上述範圍内,則可於短時間内去除芯部之構成 ^料。雷射之照射頻率根據芯部之構成材料而定,較好的 疋50〜300 Hz之範圍,特別好的是5〇〜2〇〇 Ηζ之範圍。若頻 率處於上述範圍内,則傾斜面(鏡面)之平滑性特別優異。 又,對芯部照射雷射之尺寸根據所形成之中空鏡結構體之 大小而定,較好的是80〜200 μιηχ8〇〜2〇〇 μιη,特別好的是 100〜150 μΐηχ100〜150 μιη。藉此,可形成微細之中空鏡結 構體。 • 於形成如圖7或圖8所示之用於使光路LP於光波導9〇所劃 定之平面内轉換之中空鏡結構體之情形時,對光波導之芯 部之一部分照射雷射,並使相對於芯部之雷射之照射區域 相對地變化,藉此可去除芯部之構成材料而形成中空鏡結 * 構體。於此情形時,無需使雷射之相對於芯部之深度方向 之到達度變化。圖13表示於如圖8所示之交叉型波導9〇中 之芯部9的交叉區域形成中空鏡結構94之方法之一例。如 圖13(A)所示,於芯部92之交又區域之一角設定雷射照射 邛98。繼而,使光波導9〇與雷射相對移動,以使雷射照射 138984.doc •17- 201009408 部98如圖13(A)之箭頭所示於 _ 又£域之對角線上移動。 雷射之種類、照射能量及照射頻 平如上所述·。藉由於雷射 照射部98去除芯部之構成材 了叶而形成如圖ι3(Β)所示之 中空鏡結構體94。 ‘使光波導之芯部之—部分缺生。士 冲刀缺失時,可單獨對包含芯部 之芯層實施上述之加卫,亦可自將包覆層壓接於芯層之一 面而成的積層體的該芯層側起實施上述之加工。藉由進一 步將包覆層積層於形成有鏡面之芯層,而完成本發明之包 含中空鏡結構體之錢導。於形成多層化交又型波導之情 形時,只要以使最上部與最下部成為包覆層之方式交替地 積層兩層以上之芯層與三層以上之包覆層即可。以下,一 面參照圖14及圖15’ —面對適合於本發明之光波導之製造 之方法(後照射法)進行說明。 首先,如圖14所示,提供含有於紫外光區域中具有第【 吸收極大波長之第1光酸產生劑的芯層膜材料1〇〇。繼而, 例如使用光罩120,對芯層膜材料1 〇〇之一部分照射包含該 第1吸收極大波長之波長的第丨紫外光,藉此於芯層膜材料 100之照射區域(包覆部102)與非照射區域(芯部丨〇丨)之間產 生折射率差而形成芯層1 1 〇。亦可使用包含第1吸收極大波 長的波長之雷射(未圖示)來代替光罩12〇,對芯層膜材料 100進行選擇性地照射,藉此形成芯層i丨0。可利用上述之 加工法,於所獲得之芯層11 〇之芯部1 〇 1形成劃定鏡面之中 空鏡結構體。 繼而,如圖1 5所示,例如藉由貼合使含有第2光酸產生 138984.doc -18- 201009408 劑之包覆層膜材料200接觸芯層iio之至少一面(於圖μ中 為兩面)’該第2光酸產生劑具有與該第1吸收極大波長不 同之第2吸收極大波長。繼而,藉由使芯層i 1〇與包覆層膜 材料200相互熱壓接’而獲得由芯層11〇與包覆層膜材料 200所構成之積層體230。繼而’例如使用波長截止濾光片 220 ’對積層體230之整個面照射包含該第2吸收極大波長 而不包含該第1吸收極大波長之波長的第2紫外光,藉此將 包覆層膜材料200轉化成包覆層210,同時提昇芯層11〇與 包覆層210之間之密著性。 於後照射法中’重要的是芯層膜材料1 〇〇中所包含之第i 光酸產生劑’與包覆層膜材料200中所包含之第2光酸產生 劑於紫外光中之吸收極大波長方面不同。即,第1光酸產 生劑與第2光酸產生劑必需於紫外光之吸收極大波長方面 不同,以使第1光酸產生劑對照射於上述熱壓接後之積層 體之整個面上之第2紫外光實質上不產生感應,而僅第2光 酸產生劑對該第2紫外光實質上產生感應。 此處’當照射包含第2吸收極大波長而不包含第1吸收極 大波長之波長的第2紫外光時,使用波長截止濾光片220較 為便利。波長截止濾光片阻斷波長短於規定之波長之光, 而僅使波長較該波長更長之光透射。於使用此種波長截止 濾光片之情形時’第1吸收極大波長變得必然短於第2吸收 極大波長。例如於使用300 nm之波長截止濾光片之情形 時’只要第1光酸產生劑選擇第1吸收極大波長短於300 nm 者’且第2光酸產生劑選擇第2吸收極大波長較300 nm更長 138984.doc -19- 201009408 者即可。當然,後照射法並不限定於使用此種波長截止濾 光片之態樣。當進行第2紫外光之全面照射時,只要第J光 酸產生劑實質上不產生感應,則亦可能存在第丨吸收極大 波較第2吸收極大波長更長之情形。 當進行第2紫外光之全面照射時,第】光酸產生劑實質上 不產生感應,因此不存在由殘留於芯層之芯部1〇1之第 1光酸產生劑而產生酸,從而導致於形成芯層110時所產生 之折射率差縮小或消失的情形。即,不會因第2紫外光對 於積層體之全面照射而導致芯層之波導結構受損。另一方 面,當對芯層110進行熱壓接時,由於包覆層膜材料2〇〇之 Tg(玻璃轉移溫度)於照射紫外光之前處於較低之狀態,故 而可於更低溫、低壓下實施熱壓接步驟。熱壓接步驟之低 溫、低壓化就設置於芯部之中空鏡結構體不易破損之觀點 而言,非常有意義。又,由於包覆層膜材料2〇〇中所包含 之第2光酸產生劑,係於熱壓接步驟後之對積層體進行第2 束外光之全面照射時才初次釋放出酸,故而在熱壓接步驟 前包覆層膜材料200中之聚合性基未發生反應。 作為用以形成芯層110之芯層膜材料1〇〇,若為藉由第i 篡外光之照射、或者進而藉由加熱而導致折射率發生變化 之材料,則可採用s玄技術領域中先前已知之任一種材料。 例如可使用含有第1光酸產生劑與聚合物之材料,該第丄光 酸產生劑係藉由第1紫外光之照射而活化後釋放出酸者, 該聚合物係含有主鏈、及自該主鏈分支並藉由活化之第i 光酸產生劑所釋放出之酸之作用而分子結構之至少一部分 138984.doc •20· 201009408 可自主鏈中脫離的脫離性基(脫離性側基)者。 作為第1光酸產生劑,除四(五氟苯基)硼酸鹽或六氟銻 酸鹽以外,例如可列舉四(五氟苯基)鎵酸鹽、鋁酸鹽類、 銻酸鹽類、其他硼酸鹽類、鎵酸鹽類、碳硼烷類、鹵代碳 硼烷類等。作為此種第1光酸產生劑之市售品,例如可列 舉可自紐澤西州Cranbury之Rhodia USA公司獲得之 「RHODORSIL(註冊商標,以下相同)PHOTOINITATOR 2074(CAS編號第178233-72-2號)」、可自日本東京之東洋 油墨製造股份有限公司獲得之「TAG-372R(二曱基(2-(2-萘基)-2-氧代乙基)銃鏽四(五氟苯基)硼酸鹽:CAS編號第 193957-54-9號)」、可自日本東京之Midori Kagaku股份有 限公司獲得之「MPI-103(CAS編號第87709-41-9號)」、可 自曰本東京之東洋油墨製造股份有限公司獲得之「TAG-371(CAS編號第193957-53-8號)」、可自曰本東京之東洋 合成工業股份有限公司獲得之「TTBPS_TPFPB(三(4-第三 丁基苯基)锍鏽四(五氟苯基)硼酸鹽)」等。 當使用 RHODORSIL PHOTOINITATOR 2074作為第 1 光 酸產生劑時,可較好地使用高壓水銀燈或金屬鹵化物燈作 為第1紫外光之照射機構。藉此,可對芯層膜材料100供給 未滿3 00 nm之充足之能量之紫外光,從而可高效地分解 RHODORSIL PHOTOINITATOR 2074以產生上述之酸。 作為含有脫離性基之上述聚合物,可使用透明性足夠高 (無色透明),且脫離性基藉由第1光酸產生劑所釋放出之 酸、較好的是質子之作用而脫離(切割),從而導致其折射 138984.doc • 21 - 201009408 率發生變化(較好的是下降)去 甘v ? )考。作為脫離性基,較好的θ 其分子結構中含有-ο-結構、Si β w 权好的疋 中之至少—者。上述脫離1其Γ基結構及侧·結構之 土藉由酸、較好的是質子 用而比較容易脫離。其中,作 之作 射率下降之脫離性基,較好 折 苯基結構中之至少—者。作為㈣-本基、,。構及-二 ^ 種聚合物’例如可列舉降 伯烯系樹脂或苯環丁烯系樹 系㈣Ο β 等環狀稀烴系樹脂、丙婦酸 ^甲基丙稀酸系樹脂、聚碳酸醋、聚苯乙婦、環氧 〇 由曰、聚酿胺、聚酿亞胺、聚笨并号唾等,且可將該等之 中之—種或兩種以上加以组八 ..7 、 口(间刀子混合物、聚合物摻 合物(混合物)、共聚物等)使 H“ 亥等之中’特別好的是以 ^婦系樹脂(降宿稀系聚合物)為主之聚合物。藉由使用 降伯烯系聚合物作為聚合物’ 了獲仔具有優異之光傳輸性 :,,、、、*生之芯層m。又,由於降福蝉系聚合物具有較 局之疏水性,故而可獲得不㈣吸水而產生 芯層110。 作為降福烯系聚合物,可為含有單獨之重複單元者(均⑩ 聚物)、含有兩個以上之降宿稀系重複單元者(共聚物)中之 任一者。作為此種降宿稀系聚合物,例如可列舉:⑴將降 伯烯型早體加成(共)聚合所獲得之降蓓烯型單體之加成 (共)聚合物,(2)降宿烯型單體與乙烯或烯烴類之加成共 聚物’(3)降宿烯型單體與非共扼二稀、及視需要之其他單 ,之加成’、聚物之類的加成聚合物,⑷降葙烯型單體之開 環(共)聚合物、及視需要將該⑷聚合物氫化而成之樹 138984.doc -22- 201009408 脂,(5)降莅烯型單體與乙烯或α-烯烴類之開環共聚物、及 視需要將該(共)聚合物氳化而成之樹脂,(6)降萡烯型單體 與非共扼二婦、或其他單體之開環共聚物,及視需要將該 (共)聚合物氫化而成之聚合物之類的開環聚合物。作為該 等聚合物,可列舉隨機共聚物、嵌段共聚物、交替丘聚物 等。 ’、 ❿ ❿ 該等降萡烯系聚合物例如可藉由開環複分解聚入 (R瞻)、ROMP與氫化反應之組合、自由基或陽離子之= 合、使用陽離子性鈀聚合起始劑之聚合、使用 聚合起始劑(例如鎳或其他過渡金屬之聚始 等公知之所有的聚合方法而獲得。 劑)之聚° 該等之中,作為降㈣系聚合物,較好的是㈣稀系單 :彼此之加成(共)聚合物’且含有以下述化ι(結構式B)所 宿:一個重複單元者。該降宿烯系聚合物除具有降 所*有之較高之透明性及可挽性以外,就财 …、f生達到最鬲之觀點而言特別好:For example, the laser processing method disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei 10-300961, for example, the cutting processing method disclosed in Japanese Laid-Open Patent Publication No. Hei 10-300961, for example, Japanese Patent Laid-Open No. Hei. No. 2006-98798 The imprint processing method disclosed in the publication. Right, the method of forming the hollow mirror structure using the laser processing method will be described briefly. The following is a case where a portion of the core of the optical waveguide is irradiated with a laser, and the irradiation region of the laser for the core is relatively changed. Thereby, the time for irradiating the portion of the core where the hollow mirror structure is irradiated with the laser is partially changed, I38984.doc •16· 201009408 and then adjusting the reach of the laser with respect to the depth direction of the core, and removing the core The material is constructed, whereby a hollow mirror structure can be formed. Thus, since the mirror surface can be formed by the irradiation of the laser, the hollow mirror structure can be easily formed in any pattern at any position. As the laser, for example, excimer lasers such as ArF and KrF, YAG lasers, c〇2 lasers, and the like can be cited. The irradiation energy of the laser is determined according to the constituent material of the ", preferably in the range of 100 to 1000 'mJ/cm 2 , particularly preferably in the range of 25 〇 to 700 mJ/cm 2 . If the & energy is within the above range, the composition of the core can be removed in a short time. The irradiation frequency of the laser depends on the constituent material of the core, and is preferably in the range of 50 to 300 Hz, particularly preferably in the range of 5 〇 to 2 〇〇. When the frequency is within the above range, the smoothness of the inclined surface (mirror surface) is particularly excellent. Further, the size of the laser irradiated to the core portion depends on the size of the hollow mirror structure to be formed, and is preferably 80 to 200 μm χ 8 〇 〜 2 〇〇 μιη, particularly preferably 100 to 150 μ ΐ χ 100 to 150 μηη. Thereby, a fine hollow mirror structure can be formed. • in the case of forming a hollow mirror structure for transforming the optical path LP in a plane defined by the optical waveguide 9A as shown in FIG. 7 or FIG. 8, irradiating a portion of the core of the optical waveguide with a laser, The irradiation area of the laser beam with respect to the core portion is relatively changed, whereby the constituent material of the core portion can be removed to form a hollow mirror structure. In this case, it is not necessary to change the degree of arrival of the laser in the depth direction with respect to the core. Fig. 13 shows an example of a method of forming the hollow mirror structure 94 at the intersection of the core portions 9 in the cross-shaped waveguide 9A shown in Fig. 8. As shown in Fig. 13(A), a laser irradiation 邛 98 is set at an angle of a region of the intersection of the core portions 92. Then, the optical waveguide 9 相对 is moved relative to the laser so that the laser irradiation 138984.doc • 17 - 201009408 portion 98 moves on the diagonal of the _ _ _ domain as shown by the arrow in Fig. 13 (A). The type of laser, the amount of illumination, and the frequency of exposure are as described above. The hollow mirror structure 94 shown in Fig. 3(Β) is formed by the laser irradiation unit 98 removing the constituent material of the core. ‘The part of the core of the optical waveguide is lacking. When the knife is missing, the above-mentioned core layer may be separately applied to the core layer including the core portion, or the above-mentioned processing may be performed from the side of the core layer of the laminate body which is laminated and laminated on one side of the core layer. . The carbon guide structure containing the hollow mirror structure of the present invention is completed by further laminating the cladding layer on the core layer on which the mirror surface is formed. In the case of forming a multilayered cross-linked waveguide, it is sufficient that two or more core layers and three or more cladding layers are alternately laminated so that the uppermost portion and the lowermost portion serve as cladding layers. Hereinafter, a method (post-irradiation method) suitable for the production of the optical waveguide of the present invention will be described with reference to Figs. 14 and 15'. First, as shown in Fig. 14, a core film material 1 having a first photoacid generator having a maximum absorption wavelength in the ultraviolet light region is provided. Then, for example, a portion of the core film material 1 is irradiated with a second ultraviolet light having a wavelength of the first absorption maximum wavelength by using the mask 120, whereby the cladding region of the core film material 100 is irradiated (the cladding portion 102) A core layer 1 1 〇 is formed by a refractive index difference with a non-irradiated area (core 丨〇丨). Instead of the photomask 12, a laser (not shown) including a wavelength of the first absorption maximum wavelength may be used, and the core film material 100 may be selectively irradiated to form a core layer i?0. The core mirror portion 1 of the obtained core layer 11 形成 can be formed by the above-described processing method to define a mirror-incorporated hollow mirror structure. Then, as shown in FIG. 15, for example, the cladding film material 200 containing the second photoacid generation 138984.doc -18-201009408 agent is contacted with at least one side of the core layer iio (for example, two sides in FIG. The second photoacid generator has a second absorption maximum wavelength different from the first absorption maximum wavelength. Then, the laminated body 230 composed of the core layer 11A and the cladding film material 200 is obtained by thermocompression bonding the core layer i 1〇 and the cladding film material 200 to each other. Then, the entire surface of the laminated body 230 is irradiated with the second ultraviolet light including the second absorption maximum wavelength and the wavelength of the first absorption maximum wavelength, for example, by using the wavelength cut filter 220. The material 200 is converted into a cladding layer 210 while enhancing the adhesion between the core layer 11A and the cladding layer 210. In the post-irradiation method, 'important is the absorption of the second photoacid generator contained in the core film material 1 〇〇 and the second photo acid generator contained in the cladding film material 200 in ultraviolet light. The maximum wavelength is different. In other words, the first photoacid generator and the second photoacid generator must be different in the absorption maximum wavelength of the ultraviolet light so that the first photoacid generator is irradiated onto the entire surface of the laminate after the thermocompression bonding. The second ultraviolet light does not substantially induce induction, and only the second photo acid generator substantially induces the second ultraviolet light. Here, when the second ultraviolet light including the second absorption maximum wavelength and not including the wavelength of the first absorption maximum wavelength is irradiated, it is convenient to use the wavelength cut filter 220. The wavelength cutoff filter blocks light having a wavelength shorter than a prescribed wavelength, and transmits only light having a longer wavelength than the wavelength. In the case of using such a wavelength cut filter, the first absorption maximum wavelength becomes inevitably shorter than the second absorption maximum wavelength. For example, when using a wavelength cutoff filter of 300 nm, 'as long as the first photoacid generator selects the first absorption maximum wavelength shorter than 300 nm' and the second photoacid generator selects the second absorption maximum wavelength than 300 nm. Longer 138984.doc -19- 201009408 can be. Of course, the post-irradiation method is not limited to the use of such a wavelength cut filter. When the second ultraviolet light is irradiated as a whole, the second absorption maximum wave may be longer than the second absorption maximum wavelength as long as the J photo-acid generator does not substantially induce induction. When the total irradiation of the second ultraviolet light is performed, the photoacid generator does not substantially induce induction, so that the first photoacid generator remaining in the core portion 1〇1 of the core layer does not generate an acid, resulting in an acid. The case where the refractive index difference generated when the core layer 110 is formed is reduced or disappears. That is, the waveguide structure of the core layer is not damaged by the full irradiation of the second ultraviolet light to the laminate. On the other hand, when the core layer 110 is thermocompression bonded, since the Tg (glass transition temperature) of the cladding film material 2 is at a lower state before the ultraviolet light is irradiated, it can be at a lower temperature and a lower pressure. A thermocompression bonding step is performed. The low temperature and low pressure of the thermocompression bonding step are very significant from the viewpoint that the hollow mirror structure of the core is not easily broken. Further, since the second photoacid generator contained in the coating film material 2 is first released by the second beam of external light after the thermocompression bonding step, the acid is first released. The polymerizable group in the coating film material 200 did not react before the thermocompression bonding step. As the core layer film material 1 形成 for forming the core layer 110, if it is a material which changes the refractive index by the irradiation of the external light or the heating, the s Any of the previously known materials. For example, a material containing a first photoacid generator and a polymer which is activated by irradiation of the first ultraviolet light and which releases an acid, which contains a main chain and The main chain branches and acts on at least a part of the molecular structure by the action of the acid released by the activated i-th photoacid generator. 138984.doc •20· 201009408 Debondable group (dissociative side group) which can be detached from the autonomous chain By. Examples of the first photoacid generator include, in addition to tetrakis(pentafluorophenyl)borate or hexafluoroantimonate, tetrakis(pentafluorophenyl)gallate, aluminate, and citrate. Other borate, gallate, carborane, halogenated carborane, and the like. As a commercial item of such a first photo-acid generator, for example, "RHODORSIL (registered trademark, the same below) PHOTOINITATOR 2074 (CAS No. 178233-72-2) available from Rhodia USA Co., Cranbury, NJ. No.)" TAG-372R (di-(2-(2-naphthyl)-2-oxoethyl) ruthenium tetrakis(pentafluorophenyl) available from Toyo Ink Manufacturing Co., Ltd., Tokyo, Japan "Borate: CAS No. 193957-54-9)", "MPI-103 (CAS No. 87709-41-9)" available from Midori Kagaku Co., Ltd., Tokyo, Japan, available from Tokyo "TAG-371 (CAS No. 193957-53-8)" obtained by Toyo Ink Manufacturing Co., Ltd., "TBTPS_TPFPB (three (4-Third) obtained from Tokyo Toyo Synthetic Industrial Co., Ltd.) Phenyl phenyl) ruthenium tetrakis(pentafluorophenyl) borate) and the like. When RHODORSIL PHOTOINITATOR 2074 is used as the first photoacid generator, a high pressure mercury lamp or a metal halide lamp can be preferably used as the first ultraviolet light irradiation means. Thereby, the core film material 100 can be supplied with ultraviolet light having a sufficient energy of less than 300 nm, so that the RHODORSIL PHOTOINITATOR 2074 can be efficiently decomposed to produce the above-mentioned acid. As the above polymer containing a detaching group, transparency can be used sufficiently high (colorless and transparent), and the detachable group can be detached by the action of the acid released by the first photoacid generator, preferably by protons (cutting) ), which causes its refraction 138984.doc • 21 - 201009408 rate change (preferably drop) go to Gan v?) test. As the detachment group, a preferred θ has at least one of a -ο- structure and a Si w w weight in the molecular structure. The above-mentioned soil which is separated from the thiol structure and the side structure is relatively easily separated by an acid, preferably a proton. Among them, the detachment group for reducing the radiance is preferably at least one of the phenyl structures. As (four) - the base,,. The composition of the two-component polymer is, for example, a cyclic hydrocarbon resin such as a urethane-based resin or a benzocyclobutene-based tree (tetra) Οβ, a propylene glycol acid-methyl acrylate resin, or a polycarbonate. , polystyrene, epoxy oxime, lanthanum, polyamin, polystyrene, etc., and one or more of these may be grouped. VIII, mouth (Inter-knife mixture, polymer blend (mixture), copolymer, etc.) makes it particularly preferable to use H-based resin (a rare polymer). From the use of a primary urethane-based polymer as a polymer, the core layer m has excellent optical transport properties: ,,,, and *, and since the fluorene-based polymer has a relatively hydrophobic nature, Therefore, it is possible to obtain the core layer 110 without water absorption. (4) As the norbornene-based polymer, it may be a monomer containing a single repeating unit (all 10 polymers) and containing more than two rare repeating units (copolymer) Any one of such a reduced-thinning polymer may, for example, be: (1) an addition of a primary urethane-type precursor ( ) an addition (co)polymer of a norbornene-type monomer obtained by polymerization, (2) an addition copolymer of a vinylene-type monomer and an ethylene or an olefin - (3) a enelate-type monomer and a non-co-diluted dilute, and other monomers as needed, an addition polymer such as an addition polymer, (4) a ring-opening (co)polymer of a norbornene type monomer, and if necessary (4) Hydrogenated tree of polymer 138984.doc -22- 201009408 fat, (5) ring-opening copolymer of falling ethylenic monomer and ethylene or α-olefin, and deuteration of the (co)polymer as needed a resin, (6) a ring-opening copolymer of a norbornene-type monomer and a non-co-tanning, or other monomer, and a polymer obtained by hydrogenating the (co)polymer as needed The ring-opening polymer. Examples of the polymer include a random copolymer, a block copolymer, an alternating hill polymer, etc. ', ❿ ❿ These norbornene-based polymers can be, for example, open-loop metathesis-polymerized ( R prospect), a combination of ROMP and hydrogenation, a radical or a cation, a polymerization using a cationic palladium polymerization initiator, and a polymerization initiator (for example) It is obtained by all known polymerization methods such as the polymerization of nickel or other transition metals. Among these, as the (four)-based polymer, it is preferred that (four) rare series: addition of each other (total a polymer' and a compound which is represented by the following formula (Structure B): a repeating unit. In addition to having a higher transparency and manageability, the olefinic polymer has a higher ..., f is particularly good at reaching the most embarrassing point of view:
B 上述降袼烯系聚合物例如可藉由使用下 體(下述之降尨接么疋降伯烯系单 合成。$伯烯系早践交聯性㈣稀系單體)而較好地 再者’為了獲得具有比較高之折射率 擇分子蛀槿 <^0物,通常選 、,構中含有料族環Θ香族基)、“、子、漠原子 138984.doc -23· 201009408 或氣原子之單體來合成(聚合)聚合物。另一方面,為了獲 得具有比較低之折射率之聚合物,通常選擇分子結構中含 有烧基、I原子、醚結構(_基)、⑦氧烧結構等之 合成(聚合)聚合物。 作為具有比較高之折射率之降蓓烯系聚合物,較好的是 包含芳,基降_之重複單元者。上述㈣烯系聚合物: 有特別高讀射率。作為芳垸基降㈣之重複單元所含^ 之芳烷基(芳基烷基),例如可列舉苄基、苯乙基、苯丙 基、苯丁基、萘乙基、萘丙基'第乙基、第丙基 好的是节基或苯乙基。上述含有重複單元之降福烯系聚合 物係具有極其高之折射率者,因此較好。 又,降私烯系聚合物較好的是包含烧基降福埽之重複單 元者。由於包含烧基降_之重複單元之降$烯系聚合物 的柔軟性較高’因此藉由使用上述降?I稀系聚合物,可對 光波導賦予較高之柔動性(可撓性)。作為烷基降福烯之重 複單元所含有之烷基,例如可列舉丙基、丁基' 基、庚基、辛基、壬基、癸基,特別好的是己基。再者, 該等烷基亦可為直鏈狀或支鏈狀中之任一者。 藉由包含己基降⑨烯之重複單元,可防止降料系聚合 物整體之折射率下降’且可保持較高之柔軟性。又,上述 降宿烯系聚合物對於如上述之波長區域(特別是85〇⑽附 近之波長區域)之光的透射率優異’故較好。作為此種降 宿婦系聚合物之較佳之具體例’可列舉己基降㈣之均聚 物、苯乙基降福稀之均聚物、节基降宿稀之均聚物、己基 138984.doc •24- 201009408 降宿烯與苯乙基降福烯之共聚物、己基降搐烯與节基降福 稀之共聚物等,但並不限定於該等。尤其,作為因脫離性 基之脫離而導致折射率下降之聚合物,可較好地使用二苯 基甲基降宿稀曱氧基石夕烧之均聚物、或者己基降莅婦與二 苯基曱基降搐烯甲氧基石夕烧之共聚物。 又,用以形成芯層110之芯層膜材料1〇〇亦可進一步含有 • 與上述聚合物相容,且具有與上述聚合物不同之折射率之 單體及原觸媒。於此情形時,第1光酸產生劑於照射第1紫 響 夕卜光時進而釋放出弱配位陰離子,因該弱配位陰離子之作 用而導致該原催化劑之活化溫度下降,進而對該活化溢度 進行加熱,藉此可使該原催化劑活化而將該單體聚合。 此種單體係如下之化合物,即,於第巧外光之照射區 域中反應而形成反應物,藉由該反應物之存在,可於芯層 110之照㈣域與未照㈣域巾產生折㈣差。作為該反 應物’可列舉單體於聚合物(基f)中聚合所形成之聚合物 • (polymer)、將聚合物彼此交聯所形成之交聯結構、及於聚 合物中聚合並自聚合物中分支之分支結構(分支型聚合物 或側鏈(側基))之中之至少一者。 此處,muo中,於期望照射區域之折射率變高之 ㈣時,將具有比較低之折射率之聚合物與相對於該聚合 物具有較高之折射率的單體組合使用,於期望照射區域之 折射率變低之情形時,將具有比較高之折射率之聚合物與 相對於該聚合物具有較低之折射率的單體組合使用。再 者,所謂折射率「較高」或「較低」並非表示折射率之絕 138984.doc •25· 201009408 對值,而表示某材料彼此之相對關係。而i,當藉由單體 之反應(反應物之生成),於芯層110中照射區域之折射率下 降之情形時,該部分成為包覆部102,於照射區域之折射 率上升之情形時,該部分成為芯部101。 作為此種單體,只要係具有可聚合之部位之化合物即 可,並無特別限定’例如可列舉降宿烯系單體、丙烯酸 (甲基丙烯酸)系單體、環氧系單體、$乙烯系單體等,且 可將該等之中之-種或兩種以上組合使用。該等之中較 好的是使用㈣稀系單體作為單體。藉由使用降宿稀系單 體,可獲得光傳輸性能優異、且耐熱性及柔軟性優異之芯 層11〇(光波導要素)。所謂降捐烯系單體,係包含至少一個 以下述結構式A所示之降葙烯骨架之單體的總稱,例如可 列舉以下述結構式c所表示之化合物:B The above-described norbornene-based polymer can be preferably re-formed, for example, by using a lower body (the following is a single-synthesis of a urethane-based primary-crosslinking (four) rare monomer). In order to obtain a relatively high refractive index, the molecular 蛀槿 ^ ^ ^ ^ 通常 通常 通常 通常 通常 通常 通常 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 A monomer of a gas atom is used to synthesize (polymerize) a polymer. On the other hand, in order to obtain a polymer having a relatively low refractive index, it is usually selected to have a burnt group, an I atom, an ether structure (_ group), and 7 oxygen in a molecular structure. A synthetic (polymeric) polymer having a structure such as a sintered structure. As a norbornene-based polymer having a relatively high refractive index, a repeating unit containing an aromatic group and a phenyl group is preferred. The above (4) an ethylenic polymer: The high read rate. The aralkyl group (arylalkyl group) contained in the repeating unit of the aryl group (4) may, for example, be a benzyl group, a phenethyl group, a phenylpropyl group, a phenylbutyl group or a naphthylethyl group. Naphthylpropyl 'ethyl and propyl are preferably a benzyl or phenethyl group. The above contains a repeating unit. It is preferred that the pentene-based polymer has an extremely high refractive index. Further, the olefin-based polymer is preferably a repeating unit containing a thiol group. The lowering of the olefinic polymer is higher in flexibility. Therefore, by using the above-mentioned reduced I polymer, high flexibility (flexibility) can be imparted to the optical waveguide. Examples of the alkyl group contained in the repeating unit include a propyl group, a butyl group, a heptyl group, an octyl group, a decyl group, and a decyl group, and particularly preferably a hexyl group. Further, the alkyl groups may be linear. Or any of the branched forms. By including a repeating unit of hexyl decene, it is possible to prevent the refractive index of the whole of the polymer of the stagnation polymer from decreasing, and to maintain a high flexibility. The polymer is excellent in the transmittance of light in the above-mentioned wavelength region (particularly, the wavelength region in the vicinity of 85 Å (10)). It is preferable as a preferred specific example of such a gynecological polymer. Homopolymer, homopolymer of phenethyl fumarate, homogenization of nodal reduction己基138984.doc •24- 201009408 Copolymer of cebutene and phenethylnorfosene, copolymer of hexylpentene and sulfhydryl, etc., but not limited to these. In particular, as a cause A polymer having a refractive index which is desorbed by the detachment of the detachment group can be preferably a homopolymer of diphenylmethyl phosphatase, or a hexyl group and a diphenyl fluorenyl group. Further, the core layer film material for forming the core layer 110 may further contain: • a polymer which is compatible with the above polymer and has a refractive index different from that of the above polymer In the present case, the first photoacid generator releases a weakly coordinating anion upon irradiation of the first violet light, and the activation of the procatalyst is caused by the action of the weakly coordinating anion. The temperature is lowered and the activation viscosity is further heated, whereby the procatalyst can be activated to polymerize the monomer. Such a single system is a compound which reacts in an irradiation region of the outer light to form a reactant, and by the presence of the reactant, can be produced in the photo (4) domain and the untouched (four) domain towel of the core layer 110. Fold (four) difference. The reactant 'is exemplified by a polymer formed by polymerizing a monomer in a polymer (group f), a crosslinked structure formed by crosslinking the polymers with each other, and polymerized and self-polymerized in the polymer. At least one of a branching structure (branched polymer or side chain (side group)) of a branch. Here, in the muo, when the refractive index of the desired irradiation region becomes high (four), a polymer having a relatively low refractive index is used in combination with a monomer having a higher refractive index with respect to the polymer, and the desired irradiation is performed. In the case where the refractive index of the region becomes low, a polymer having a relatively high refractive index is used in combination with a monomer having a lower refractive index with respect to the polymer. Furthermore, the fact that the refractive index is "higher" or "lower" does not mean a refractive index of 138984.doc •25· 201009408, and indicates the relative relationship of a certain material to each other. And i, when the refractive index of the irradiation region in the core layer 110 is lowered by the reaction of the monomer (reaction of the reactant), the portion becomes the cladding portion 102, and when the refractive index of the irradiation region rises, This portion becomes the core portion 101. The monomer is not particularly limited as long as it is a compound having a polymerizable moiety, and examples thereof include a vinylene-based monomer, an acrylic acid (methacrylic acid) monomer, and an epoxy monomer. A vinyl monomer or the like may be used in combination of two or more of these. It is preferable to use (4) a rare monomer as a monomer. By using a reduced-dilute monomer, a core layer 11 (optical waveguide element) excellent in optical transmission performance and excellent in heat resistance and flexibility can be obtained. The olefinic monomer is a general term of a monomer containing at least one decylene skeleton represented by the following structural formula A, and examples thereof include compounds represented by the following structural formula c:
0 A0 A
Ri -R?Ri -R?
-R3 C R4 上式中’ a表示單鍵或雙鍵,Ri〜r4分別獨立地表示氫原 子、經取代或未經取代之烴基、或官能取代基,爪表示 0〜5之整數。其中,當a為雙鍵時,r〗&r2中之任一者、R3 及R4中之任一者不存在。 作為未經取代之烴基(hydrocarbyl) ’例如可列舉直鍵狀 138984.doc • 26 - 201009408 或支鍵狀之碳數為l〜10(Cl〜CiG)之烷基、直鏈狀或支鏈狀 之碳數為2〜10(C2〜C1G)之烯基、直鏈狀或支鏈狀之碳數為 2〜10(C2〜C1Q)之炔基、碳數為4〜12(C4〜Ci2)之環烷基、碳 數為4〜12(C4〜Ci2)之環烯基、碳數為6〜12(C6~C12)之芳 基、碳數為7〜24(C7〜C24)之芳烷基(芳基烷基)等,除此以 外’ R1及R2、R3及r4分別亦可為碳數一之亞烷 基。 作為烷基之具體例’可列舉曱基、乙基、丙基、異丙 基、丁基、異丁基、第二丁基、第三丁基、戊基、新戊 基、己基、庚基、辛基 '壬基及癸基,但並不限定於該 等。作為烯基之具體例,可列舉乙烯基、烯丙基、丁烯基 及環己烯基,但並不限定於該等。作為炔基之具體例,可 列舉乙炔基、1-丙炔基、2-丙炔基、1-丁炔基及2-丁炔 基,但並不限定於該等。作為環烧基之具體例,可列舉環 戊基、環己基及環辛基,但並不限定於該等。作為芳基之 具體例’可列舉苯基、萘基及蒽基(anthracenyl),但並不 限定於該等。作為芳烧基(aralkyl)之具體例,可列舉节基 及苯乙基(苯乙基:phenethyl),但並不限定於該等。又, 作為亞娱:基(alkylidenyl)之具體例,可列舉亞甲基 (methylidenyl)及亞乙基(ethylidenyl),但並不限定於該 等。 作為經取代之烴基,可列舉上述之烴基所含有之氫原子 之一部分或全部被齒素原子取代者,即豳代烴基 (halohydrocarbyl)、全鹵代烴基(perhalohydrocarbyl)、或 138984.doc •27- 201009408 全鹵代碳基(perhalocarbyl)之類的鹵化烴基。於該等之鹵 化烴基中,作為取代氫原子之齒素原子較好的是選自氣 原子 '氟及溴中之至少一種原子,更好的是氟原子。其 中,作為經全鹵化之烴基(全齒代烴基、全鹵代碳基)之具 體例,例如可列舉全氟苯基、全氟曱基(三氟甲基)、全氟 乙基、全氟丙基、全氟丁基、全氟己基等。再者,齒化烷 基除碳數為1〜10者以外’亦可較好地使用碳數為u〜2〇 者。即,齒化烷基可選擇部分地或完全地被齒化,呈直鏈 狀或支鏈狀’且以通式:-Czx"2Z+1所表示之基。此處,X" 分別獨立地表示鹵素原子或氫原子,Z表示1〜20之整數。 又,作為經取代之烴基’可列舉除被鹵素原子取代以外、 進而被直鏈狀或支鏈狀之碳數為^”(^〜(:^之烷基或鹵代 烷基、芳基及環烷基取代的環烷基、芳基及芳烷基(ara_ alkyl)等。 又’作為官能取代基’例如可列舉-(CH2)n-CH(CF2)2-0--R3 C R4 In the above formula, 'a' represents a single bond or a double bond, and Ri to r4 each independently represent a hydrogen atom, a substituted or unsubstituted hydrocarbon group, or a functional substituent, and the claws represent an integer of 0 to 5. Wherein, when a is a double bond, any of r and &r; r2, and any of R3 and R4 does not exist. Examples of the unsubstituted hydrocarbyl group include, for example, a straight bond 138984.doc • 26 - 201009408 or a branched alkyl group having a carbon number of 1 to 10 (Cl to CiG), a linear chain or a branched chain. The alkenyl group having a carbon number of 2 to 10 (C2 to C1G), a linear or branched alkynyl group having a carbon number of 2 to 10 (C2 to C1Q), and a carbon number of 4 to 12 (C4 to Ci2) a cycloalkyl group, a cycloalkenyl group having a carbon number of 4 to 12 (C4 to Ci2), an aryl group having a carbon number of 6 to 12 (C6 to C12), and an aralkyl group having a carbon number of 7 to 24 (C7 to C24) Other than the above, R 1 and R 2 , R 3 and r 4 may each independently be an alkylene group having a carbon number of one. Specific examples of the alkyl group include mercapto, ethyl, propyl, isopropyl, butyl, isobutyl, t-butyl, t-butyl, pentyl, neopentyl, hexyl, heptyl. , octyl' thiol and sulfhydryl, but not limited to these. Specific examples of the alkenyl group include a vinyl group, an allyl group, a butenyl group, and a cyclohexenyl group, but are not limited thereto. Specific examples of the alkynyl group include an ethynyl group, a 1-propynyl group, a 2-propynyl group, a 1-butynyl group and a 2-butynyl group, but are not limited thereto. Specific examples of the cyclic alkyl group include a cyclopentyl group, a cyclohexyl group and a cyclooctyl group, but are not limited thereto. Specific examples of the aryl group include a phenyl group, a naphthyl group and an anthracenyl group, but are not limited thereto. Specific examples of the aralkyl group include a sulfhydryl group and a phenethyl group (phenethyl), but are not limited thereto. Further, specific examples of the alkylidenyl group include a methylidenyl group and an ethylidenyl group, but are not limited thereto. As the substituted hydrocarbon group, a part or all of a hydrogen atom contained in the above hydrocarbon group may be substituted by a dentate atom, that is, a halohydrocarbyl group, a perhalohydrocarbyl group, or 138984.doc •27- 201009408 Halogenated hydrocarbon group such as perhalocarbyl. Among the halogenated hydrocarbon groups, the dentate atom which is a substituted hydrogen atom is preferably at least one selected from the group consisting of a fluorine atom and a bromine, and more preferably a fluorine atom. Specific examples of the perhalogenated hydrocarbon group (all-co-hydrocarbon group or perhalogenated carbon group) include perfluorophenyl group, perfluorodecyl group (trifluoromethyl group), perfluoroethyl group, and perfluoro group. Propyl, perfluorobutyl, perfluorohexyl and the like. Further, the number of carbon atoms of the dentate alkyl group is from 1 to 10, and the number of carbon atoms is preferably from 〜2 〇. That is, the dentate alkyl group may be partially or completely dentated, linear or branched, and represented by the formula: -Czx" 2Z+1. Here, X" independently represents a halogen atom or a hydrogen atom, and Z represents an integer of 1 to 20. Further, the substituted hydrocarbon group 'is, in addition to being substituted by a halogen atom, further has a linear or branched carbon number of ^" (^~(:^ alkyl or haloalkyl, aryl and naphthene) a substituted cycloalkyl group, an aryl group and an aralkyl group (ara_alkyl), etc. Further, 'as a functional substituent', for example, -(CH2)n-CH(CF2)2-0-
Si(Me)3、-(CH2)n-CH(CF3)2-0-CH2-0-CH3、-(CH2)n-CH(CF3)2- 0-C(0)-0-C(CH3)3、-(CH2)n-C(CF3)2-0H、-(CH2)n-C(0)- NH2、-(CH2)n-C(0)-Cl、-(CH2)n-C(0)-0-R5、_(CH2)n_〇_ r5 ' -(CH2)„-0-C(0)-R5 > -(CH2)n-C(0)-R5 ' -(CH2)n-0-C(0)-OR5、_(CH2)n-Si(R5)3、-(CH2)n-Si(OR5)3、-(CH2)n-0-Si(R5)3及-(CH2)n-C(0)-0R6等。此處,於上述各式中,11表 示0〜10之整數,R5分別獨立地表示氫原子、直鏈狀或支鏈 狀之碳數為1〜20(C广C2〇)之烷基、直鏈狀或支鏈狀之碳數 為〜C20)之鹵化或全鹵化烷基、直鏈狀或支鏈狀之碳數 138984.doc • 28- 201009408Si(Me)3, -(CH2)n-CH(CF3)2-0-CH2-0-CH3, -(CH2)n-CH(CF3)2- 0-C(0)-0-C(CH3 3, -(CH2)nC(CF3)2-0H, -(CH2)nC(0)-NH2, -(CH2)nC(0)-Cl, -(CH2)nC(0)-0-R5, _(CH2)n_〇_ r5 ' -(CH2)„-0-C(0)-R5 > -(CH2)nC(0)-R5 ' -(CH2)n-0-C(0)- OR5, _(CH2)n-Si(R5)3, -(CH2)n-Si(OR5)3, -(CH2)n-0-Si(R5)3 and -(CH2)nC(0)-0R6 Here, in the above formulas, 11 represents an integer of 0 to 10, and R5 each independently represents a hydrogen atom, a linear or branched alkyl group having a carbon number of 1 to 20 (C wide C 2 Å). , a linear or branched carbon number of ~C20), a halogenated or perhalogenated alkyl group, a linear or branched carbon number 138984.doc • 28- 201009408
為2〜10(C2〜Cl。)之烯基、直鏈狀或支鏈狀之碳數為w (c2 C10)之块基、碳數為5〜12(c5〜d之環院基、碳數為 6〜U(C6〜Cl4)之芳基、碳數為6〜i4(c6〜c")之自化或全南 化芳基或碳數為7〜24(C7〜C24)之芳烧基。#者,以r5所示 之烴基表示與以r1〜r%示之所示之烴基相同的煙基。如 ^〜^所示,亦可將以R5所示之烴基齒化或全齒化。例如 tR5為碳數為1〜尊广^)之齒化或全A化烧基時,Rk 通式:-CZX’’2Z+1表示。此處,z&x"之定義分別與上述相 同,x之至少一者為鹵素原子(例如溴原子、氣原子或氟 原子)。此處,所謂全鹵化烷基係指於上述通式中,所有 X"均為鹵素原子之基,作為該基之具體例,可列舉三氟甲 基、二氯甲基、-C7F15、_CnF23,但並不限定於該等。作 為全A化芳基之具體例,可列舉五氣笨基、五氟苯基,但 並不限疋於該等。又,作為R6,例如可列舉_C(CH3)3、 •Si(CH3)3、-Ci^RYo-CHrCf^、及下述 化4之環狀基等:Is an alkenyl group of 2 to 10 (C2 to Cl.), a linear or branched carbon group having a carbon number of w (c2 C10), and a carbon number of 5 to 12 (c5 to d ring-ring base, carbon) The number of 6~U(C6~Cl4) aryl groups, carbon number 6~i4 (c6~c"), self-chemical or fully-alloyed aryl group or carbon number 7~24 (C7~C24) In the case of #, the hydrocarbon group represented by r5 represents the same smoky group as the hydrocarbon group shown by r1 to r%. As shown by ^~^, the hydrocarbon group represented by R5 may be toothed or fully dentated. For example, when tR5 is a toothed or fully A-calcined group having a carbon number of 1 to Zunguang, Rk is represented by the formula: -CZX''2Z+1. Here, z&x" is defined as above, and at least one of x is a halogen atom (e.g., a bromine atom, a gas atom or a fluorine atom). Here, the perhalogenated alkyl group means a group in which all of X" are halogen atoms in the above formula, and specific examples of the group include a trifluoromethyl group, a dichloromethyl group, -C7F15, and _CnF23. However, it is not limited to these. Specific examples of the all-A-aryl group include a five-gas group and a pentafluorophenyl group, but are not limited thereto. Further, examples of R6 include _C(CH3)3, •Si(CH3)3, -Ci^RYo-CHrCf^, and a cyclic group of the following:
此處’ R7表示氫原子、或者直鏈狀或支鏈狀之碳數為 5(Ci〜C5)之烷基。作為烷基,可列舉甲基、乙基、丙 138984.doc 201009408 基、1-丙基、丁基、i-丁基、第三丁基、戍基、第三戊 基、新戊基。再者,於以上述化4所表示之環狀基中,於 自環結構延伸之單鍵與酸取代基之間形成㈣K乍為r6 之具體例,例如可列舉丨·甲基小環己基、異宿基 (isobornyl)、2-甲基_2·異福基、2·甲基_2_金剛烷基、四氫 呋喃基(tetrahydr〇furanyl)、四氫 D比喃基(tetrahydr〇pyr_州 3側氣環己酿基(3-oxocycl〇hexan〇nyl)、甲羥戊酸内酯 基(mevalonic lactonyl)、^乙氧基乙 基等。又,作為其…如可列舉以下述第化: 二環丙基甲基(DCpm)、二甲基環丙基甲基(Dmcp)等: Y —CH A (Dcpm)Here, 'R7' represents a hydrogen atom or an alkyl group having a linear or branched carbon number of 5 (Ci to C5). The alkyl group may, for example, be methyl, ethyl or propyl 138984.doc 201009408, 1-propyl, butyl, i-butyl, tert-butyl, decyl, tert-pentyl or neopentyl. Further, in the cyclic group represented by the above-mentioned formula 4, a specific example in which (4) K乍 is r6 is formed between a single bond extending from the ring structure and an acid substituent, and examples thereof include a fluorenylmethylcyclohexyl group. Isobornyl, 2-methyl-2.isofosyl, 2·methyl-2-alkanoyl, tetrahydrofurfuranyl, tetrahydrogen-pyranyl (tetrahydr〇pyr_state 3 3-oxocycl〇hexan〇nyl, mevalonic lactonyl, ethoxyethyl, etc. Further, as it can be enumerated as follows: Cyclopropylmethyl (DCpm), dimethylcyclopropylmethyl (Dmcp), etc.: Y —CH A (Dcpm)
Y —C(CH3) (Dmcp) ❹ 又作為單體’亦可使用交聯性單體(交聯劑)來代替上 述早體、或者與上述單體—併使用。該交聯性單體係可於 下述之觸媒前驅物之存在下產生交聯反應之化合物。藉由 使用交聯性單體’具有如下之優點…由於交聯性單體 更快速地聚合’因此可縮短芯層110之形成(製程)所需要之 時間又’由於交聯性單體即便加熱亦不易蒸發,因此可 抑制蒸氣壓之上升。進而,由於交聯性單體 異,因此可提昇芯層110之耐熱性。 •、優 其中’交聯性降H嫌& 示之㈣係包含以上述結構式A所表 (降伯烯系雙鍵)之化合物。作為交聯性 138984.doc -30 - 201009408 降福彿系單體’有連續多環環系(fused multicyclic ring systems)之化合物與連結多環環系(Unked multicydic systems)之化合物。作為連續多環環系之化合物(連績多環 環系之交聯性降萡烯系單體),可列舉下述化合物:Y - C(CH3) (Dmcp) ❹ Further, as the monomer, a crosslinkable monomer (crosslinking agent) may be used instead of or in combination with the above monomers. The crosslinkable single system can produce a compound of a crosslinking reaction in the presence of a catalyst precursor as described below. By using a crosslinkable monomer', there is an advantage that the crosslinkable monomer is polymerized more rapidly, so that the time required for the formation (process) of the core layer 110 can be shortened, and the crosslinkable monomer is heated even though It is also not easy to evaporate, so the increase in vapor pressure can be suppressed. Further, since the crosslinkable monomer is different, the heat resistance of the core layer 110 can be improved. • Excellent, wherein the cross-linking property is low and the compound (4) contains a compound represented by the above structural formula A (lower-based double bond). As cross-linking 138,984.doc -30 - 201009408 福福佛 monomer's compounds having fused multicyclic ring systems and compounds linked to Unked multicydic systems. Examples of the compound of the continuous polycyclic ring system (crosslinking norbornene-based monomer of the continuous polycyclic ring system) include the following compounds:
上式中,Y表示亞甲基(_CH2_)基,m表示〇〜5之整數。其 中,當m為0時,γ為單鍵。再者,為了簡單化,將降福二 烯(norbornadiene)看作屬於連續多環環系,且包含聚合性In the above formula, Y represents a methylene group (_CH2_) group, and m represents an integer of 〇~5. Among them, when m is 0, γ is a single bond. Furthermore, for simplification, norbornadiene is considered to belong to a continuous polycyclic ring system and contains polymerizability.
降蓓烯系雙鍵者。作為該連續多環環系之化合物之具體 例’可列舉下述化合物,但並不限定於該等: 138984.docThose who lower the terpene double bond. Specific examples of the compound of the continuous polycyclic ring system include the following compounds, but are not limited thereto: 138984.doc
CC
另一方面,作為連結多環環系之化合物(連結多 環環系 -31- 201009408 之交聯性降葙烯系單體),可列舉下述化合物:On the other hand, examples of the compound which is a polycyclic ring system (crosslinkable norbornene-based monomer which is bonded to the polycyclic ring system -31 to 201009408) include the following compounds:
上式中,a分別獨立地表示單鍵或雙鍵,m分別獨立地表 示0〜5之整數,R9分別獨立地表示二價之烴基、二價之醚 基或二價之矽烷基。又,η為〇或丨。此處,所謂二價之取 代基係指端部含有兩個可與降宿烯結構鍵結之鍵者。作為 二價之烴基(hydrocarbyl)之具體例,可列舉以通式:_(CdH2d)_ 所表示之伸烷基(d較好的是表示丨〜…之整數)與二價之芳 香族基(¾基)。作為二價之伸烧基,較好的是直鏈狀或支 鍵狀之碳數為1〜1 〇(C丨〜c丨〇)之伸烧基,例如可列舉亞甲 基、伸乙基、伸丙基、伸丁基、伸戊基、伸己基、伸庚 基伸辛基、壬烯基、癸烯基。再者,支鏈狀伸烷基係主 鏈之氫原子被直鏈狀或支鏈狀之烷基取代者。另一方面, 作為二價之芳香族基,較好的是二價之苯基、二價之萘 基。。又,二價之醚基為以_R'〇_R丨、所表示之基。此處, R刀別獨立,且表示與R9相同者。作為該連結多環環系 化合物之具體例,除以下述化9、化10、化i丨、化12、化 13所表示之化合物以外’可列舉以化14、化15所表示之含 有氟之化合物(含有氟之交聯性降葙烯系單體),但並不限 定於該等:In the above formula, a each independently represents a single bond or a double bond, and m each independently represents an integer of 0 to 5, and R9 each independently represents a divalent hydrocarbon group, a divalent ether group or a divalent decyl group. Also, η is 〇 or 丨. Here, the term "bivalent substituent" means that the end portion contains two bonds which can be bonded to the structure of the enephene. Specific examples of the hydrocarbyl group include an alkylene group represented by the formula: _(CdH2d)_ (d is preferably an integer representing 丨~...) and a divalent aromatic group ( 3⁄4 base). The divalent stretching group is preferably a linear or branched carbon group having a carbon number of 1 to 1 Torr (C丨 to c丨〇), and examples thereof include a methylene group and an ethyl group. , propyl, butyl, pentyl, hexyl, hexyl, decyl, decyl. Further, the hydrogen atom of the branched alkyl group main chain is substituted by a linear or branched alkyl group. On the other hand, as the divalent aromatic group, a divalent phenyl group and a divalent naphthyl group are preferred. . Further, the divalent ether group is a group represented by _R'〇_R丨. Here, the R-knife is independent and represents the same as R9. Specific examples of the linked polycyclic ring-based compound include fluorine-containing compounds represented by the following formulas 9 and 9 except for the compounds represented by the following formulas 9, 10, and 12; a compound (crosslinking norbornene-based monomer containing fluorine), but is not limited to these:
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該以化10所表示之化合物係二甲基雙[二環[2.2.1]庚-2-烯-5-甲氧基]矽烷,於其他命名中,稱為二甲基雙(降宿烯 曱氧基)矽烷(略記為「SiX」):The compound represented by the formula 10 is dimethyl bis[bicyclo[2.2.1]hept-2-en-5-methoxy]decane, and in other nomenclature, it is called dimethyl bis(pentene).曱oxy) decane (abbreviated as "SiX"):
上式中,η表示0〜4之整數;In the above formula, η represents an integer of 0 to 4;
138984.doc -33- 201009408138984.doc -33- 201009408
138984.doc •34- 201009408 上式中,m及η分別表示1〜4之整數;138984.doc •34- 201009408 In the above formula, m and η represent integers from 1 to 4, respectively;
於各種交聯性降葙烯系單體之中,特別好的是二曱基雙 (降葙烯甲氧基)矽烷(SiX)。siX相對於包含烷基降葙烯之 重複單元及/或芳烷基降莅烯之重複單元之烷基降莅烯系 聚合物,具有足夠低之折射率。因此,能夠可靠地使照射 下述之第1紫外光之照射區域之折射率下降,從而形成包 覆部102。又,可增大芯部1〇1與包覆部ι〇2之間之折射率 差,從而可實現提昇芯層110之特性(光傳輸性能)。再者, • 如以上之單體可單獨或任意地組合後使用。 原觸媒係可使上述之單體之反應(聚合反應、交聯反應 等)開始之物質,且係因藉由第1紫外光之照射而活化之第 • 1光酸產生劑的作用’活化溫度會發生變化之物質。 作為該原觸媒(亦稱為觸媒前驅物),只要為活化溫度伴 隨第1紫外光之照射而發生變化(上升或下降)者,則可使用 任何化合物,尤其好的是活化溫度伴隨第i紫外光之照射 而下降者。藉此,能夠以比較低溫之加熱處埋來形成芯層 138984.doc 35· 201009408 必要之熱量而導致光波導 1 ίο,且可防止對其他層施加不 之特性(光傳輸性能)下降。 作為此種原觸媒,可較好地使用包含以下述式⑽及⑽ 所表示之化合物中之至少一者(以該化合物為主)的原觸 媒: (E(R)3)2Pd(Q)2 (ia) [(E(R)3)aPd(Q)(LB)b]p[wCA]r (ib) 式la、lb中,E(R)3表示第15族之中性電子予體⑷w donor)配位基,E表示選自週期表之第15族之元素,r表示 包含氫原子(或其同位素之一)或烴基之部位,Q表示選自 羧酸酯、硫代羧酸酯及二硫代羧酸酯之陰離子配位基。 又,式Ib中,LB表示路易斯驗(Lewis base),WCA表示弱 配位陰離子,a表示1〜3之整數,b表示〇〜2之整數,3與1?之 總計為1~3,p及r表示獲取鈀陽離子與弱配位陰離子之電 荷之平衡的數。 作為根據式la之典型之原觸媒,可列舉Among the various crosslinkable norbornene-based monomers, particularly preferred is dimercaptobis(northene methoxy)decane (SiX). The SiX has a sufficiently low refractive index with respect to the alkylpentene-based polymer containing a repeating unit of an alkyl norbornene and/or a repeating unit of an aralkyl drop-ene. Therefore, the refractive index of the irradiation region irradiated with the first ultraviolet light described below can be reliably lowered to form the covering portion 102. Further, the difference in refractive index between the core portion 1〇1 and the cladding portion ι 2 can be increased, so that the characteristics (optical transmission performance) of the core layer 110 can be improved. Furthermore, • The above monomers may be used singly or in any combination. The primary catalyst is a substance which can initiate the reaction (polymerization reaction, crosslinking reaction, etc.) of the above monomers, and is activated by the action of the first photoacid generator activated by the irradiation of the first ultraviolet light. A substance whose temperature changes. As the primary catalyst (also referred to as a catalyst precursor), any compound may be used as long as the activation temperature changes (rises or falls) with the irradiation of the first ultraviolet light, and it is particularly preferable that the activation temperature is accompanied by i The decrease in ultraviolet light irradiation. Thereby, it is possible to form the optical waveguide 1 ίο with the heat necessary for forming the core layer 138984.doc 35· 201009408 at a relatively low temperature, and it is possible to prevent a decrease in characteristics (optical transmission performance) of the other layers. As such a primary catalyst, a primary catalyst containing at least one of the compounds represented by the following formulas (10) and (10) (mainly based on the compound) can be preferably used: (E(R)3)2Pd (Q) ) 2 (ia) [(E(R)3) aPd(Q)(LB)b]p[wCA]r (ib) where la, lb, E(R)3 represents the 15th group of neutral electrons a ligand of (4)w donor, E represents an element selected from Group 15 of the periodic table, r represents a moiety containing a hydrogen atom (or one of its isotopes) or a hydrocarbon group, and Q represents a selected from a carboxylate, a thiocarboxylic acid. Anionic ligands for esters and dithiocarboxylates. Further, in Formula Ib, LB represents a Lewis base, WCA represents a weakly coordinating anion, a represents an integer of 1 to 3, b represents an integer of 〇~2, and a total of 3 and 1? is 1 to 3, p And r represents the number of the balance of the charge of the palladium cation and the weakly coordinating anion. As a typical original catalyst according to formula la, it can be enumerated
Pr)3)2、Pd(OAc)2(P(Cy)3)2、Pd(02CCMe3)2(P(Cy)3)2、 Pd(OAc)2(P(CP)3)2、Pd(02CCF3)2(P(Cy)3)2、Pd(02CC6H5)3(P(Cy)3)2 ,但並不限定於該等。此處,Cp表示環戊基(cyclopentyl) ,Cy表示環己基。 又’作為以式Ib所表示之原觸媒,較好的是p及r為分別 選自1及2之整數的化合物。作為根據此種式ib之典型之原 觸媒,可列舉Pd(OAc)2(P(Cy)3)2。此處,Cy表示環己基, Ac表示乙酿基。 138984.doc -36- 201009408 該等原觸媒可使單體高效地反應(於降莅烯系單體之情 形時’藉由加成聚合反應而高效地進行聚合反應或交聯反 應等)。Pr) 3) 2, Pd (OAc) 2 (P (Cy) 3) 2, Pd (02CCMe3) 2 (P (Cy) 3) 2, Pd (OAc) 2 (P (CP) 3) 2, Pd ( 02CCF3)2(P(Cy)3)2, Pd(02CC6H5)3(P(Cy)3)2, but is not limited to these. Here, Cp represents a cyclopentyl group, and Cy represents a cyclohexyl group. Further, as the original catalyst represented by the formula Ib, it is preferred that p and r are compounds each independently selected from the integers of 1 and 2. Pd(OAc)2(P(Cy)3)2 is exemplified as a typical catalyst according to the formula ib. Here, Cy represents a cyclohexyl group, and Ac represents an ethylenic group. 138984.doc -36- 201009408 These primary catalysts allow the monomer to react efficiently (in the case of a lowering of an olefinic monomer), a polymerization reaction or a crosslinking reaction is efficiently carried out by an addition polymerization reaction, etc.).
又’於活化溫度下降之狀態(活性潛在狀態)下,作為原 觸媒’較好的是其活化溫度較原本之活化溫度低1〇〜8〇£>c 左右(較好的是10〜50°C左右)者。藉此,能夠可靠地產生 芯部101與包覆部102之間之折射率差。作為上述原觸媒, 較好的是包含Pd(OAC)2(P(i-Pr)3)2APd(〇Ac)2(p(Cy)3)2之中 之至少一者(以其為主)的原觸媒。再者,以下有時將 Pd(0Ac)2(P(i_Pr)3)2略記為「pdw」,又,將奶⑺丄 略記為「Pd785」。 當形成芯層膜材料100時,製備包含上述聚合物、第】光 酸產生劑及其他所需之添加劑之&層用清漆。作為用於怒 層用清漆之製備之溶劑,例如可列舉二乙_、二異㈣、 四氫n夫鳴 醇二甲醚 甲基溶纖 己烷、戊 二甲苯、 呋喃、吡 I,2·二甲氧基乙烷(DME)、i,4-二氧雜環己烷 (THF)、四氫吡喃(THp)、苯甲醚、二乙二 (digiyme)、二乙二醇乙趟(carbh〇1)等醚系溶劑 劑、乙基溶纖劑、苯基溶纖劑等溶纖劑系溶劑 烷、庚烷、環己烷等脂肪族烴系溶劑,甲苯 苯、均三甲苯等芳香族煙系溶劑,(唆、η比呼 咯、噻吩、甲基吡咯啶酮 一 方管族雜%化合物系溶劑, Ν,Ν-二甲基甲醯胺(dmF)、Ν Ν _ ,-—甲基乙酶胺(DMA)等醯 胺系溶劑’二氯甲烷、氯仿、丨 ^ ’ 一氣乙燒等鹵素化合物 系溶劑,乙酸乙酯、乙酸甲 甲酸乙酯等酯系溶劑,二 138984.doc -37- 201009408 甲基亞颯(DMSO)、環丁砜等硫化合物系溶劑等各種有機 溶劑,或者包含該等之混合溶劑等。 又,視需要,亦可於芯層用清漆中添加增感劑。該增感 劑具有如下功能,即增大第1光酸產生劑對於第丨紫外光之 感度,減少其活化(反應或分解)所需要之時間或能量,或 者將第1紫外光之波長轉變成適合於其活化之波長。作為 此種增感劑,根據光酸產生劑之感度或増感劑之吸收之峰 值波長等而適當選擇,並無特別限定,例如可列舉9,1〇_二 丁氧基蒽(CAS編號第76275_14_4號)之類的葱類、咄酮 類、蒽醌類、菲類、筷類、苯并祐類、熒慧類 (f—)、紅螢烯類,、陰丹士林類硫♦星_ 9-酮類(th1〇xanthen-9-ones)等,可單獨使用該等或將該等 作為混合物來使用。作為增感劑之具體例,可列舉2_異丙 基-9H-硫♦星冬酮、4_異丙基_9H_硫❸星冬酮、卜氣I丙 氧基9-氧硫咕、㈣物h_thiazine)或該等之混合 Θ 物再者,9,1〇-一丁氧基蒽(DBA)可自曰本神奈川縣之川 崎^成工#股份有限公㈣得mf漆中之增感劑之 含置並無特別限定,較好的是〇.〇1質量%以上,更好的是 〇.5質量%以上,進而更好的是1質量%以上。再者,上限 值較好的是5質量%以下。 進而》顏豐ffi «L. 了於β層用清漆中添加抗氧化劍。藉 此。’可防止所不期望之自由基之產生或聚合物之自然氧 Λ其、。果’可實現所獲得之芯層11 〇之特性之提昇。作Further, in the state where the activation temperature is lowered (active potential state), as the original catalyst, it is preferable that the activation temperature is lower than the original activation temperature by 1 〇 to 8 > c or so (preferably 10 〜) About 50 ° C). Thereby, the refractive index difference between the core portion 101 and the cladding portion 102 can be reliably generated. As the primary catalyst, it is preferred to include at least one of Pd(OAC)2(P(i-Pr)3)2APd(〇Ac)2(p(Cy)3)2 (mainly The original catalyst. In addition, in the following, Pd(0Ac)2(P(i_Pr)3)2 may be abbreviated as "pdw", and milk (7)" may be abbreviated as "Pd785". When the core film material 100 is formed, a <layer varnish containing the above polymer, the photoacid generator and other desired additives is prepared. Examples of the solvent used for the preparation of the varnish for the anger layer include diethyl bis, diiso (tetra), tetrahydro n- ketone dimethyl ether methyl solvohexane, pentylene, furan, and pyridyl I, 2·. Dimethoxyethane (DME), i,4-dioxane (THF), tetrahydropyran (THp), anisole, digiyme, diethylene glycol oxime ( Solvents such as carbh〇1), such as ether solvent, ethyl cellosolve, and phenyl cellosolve are solvent hydrocarbons such as solvent alkane, heptane, and cyclohexane, and aromatics such as toluene and mesitylene. Group of flue-cured solvents, (唆, η, 呼, thiophene, methylpyrrolidone, one of the compounds of the family of heterocyclic compounds, hydrazine, hydrazine-dimethylformamide (dmF), Ν Ν _, - A A hydrazine-based solvent such as acetylamine (DMA), a solvent such as dichloromethane, chloroform or hydrazine, a halogen compound such as ethyl bromide, an ester solvent such as ethyl acetate or ethyl acetate, 138,984.doc - 37- 201009408 Various organic solvents such as a solvent such as methyl sulfonium (DMSO) or sulfolane, or a mixed solvent thereof, etc. Further, if necessary, a sensitizer is added to the layer varnish. The sensitizer has the function of increasing the sensitivity of the first photoacid generator to the second ultraviolet light, reducing the time or energy required for activation (reaction or decomposition), or The wavelength of the first ultraviolet light is converted to a wavelength suitable for the activation thereof. The sensitizer is appropriately selected depending on the sensitivity of the photoacid generator or the peak wavelength of absorption of the sensitizer, and is not particularly limited. Examples include scallions, anthrones, anthraquinones, phenanthrenes, chopsticks, benzophenones, and fluorescein (9, etc.) such as 9,1 〇-dibutoxy oxime (CAS No. 76275_14_4). ), red fluorene, indanthrene sulphur ♦ 9-ketone (th1 〇 xanthen-9-ones), etc., may be used alone or as a mixture. As a sensitizer Specific examples thereof include 2 isopropyl-9H-sulfur oxonone, 4 isopropyl -9H thioxanthone, Bu propyl I propoxy 9-oxopurine, and (4) h_thiazine. Or such a mixture of sputum, 9,1 〇--butoxy oxime (DBA) can be obtained from the Kawasaki of the Kanagawa Prefecture. Set containing the sensitizer is not particularly limited, but is preferably at least 〇.〇1 mass%, more preferably more than 〇.5% by mass, and further more preferably 1 mass% or more. Further, the upper limit value is preferably 5% by mass or less. Furthermore, Yan Feng ffi «L. added an antioxidant sword to the enamel in the beta layer. Borrow this. ' Prevents the generation of undesired free radicals or the natural oxygen of the polymer. The effect of the obtained core layer 11 can be improved. Make
為该抗氧化劑,可動^L J較好地使用能夠自紐約州Tarrytowni 138984.doc -38- 201009408For this antioxidant, the movable ^L J can be used better from Tarrytowni, NY 138984.doc -38- 201009408
Ciba Specialty Chemicals公司獲得之Ciba(註冊商標,以下 相同)IRGANOX(註冊商標,以下相同)1076及Ciba IRGAFOS(註冊商標,以下相同)168。又,作為其他抗氧 化劑,例如可使用Ciba Irganox(註冊商標,以下相同) 129 ' Ciba Irganox 1330 ' Ciba Irganox 1010 ' Ciba Cyanox (註冊商標’以下相同)1790、Ciba Irganox(註冊商 標)3 114、Ciba Irganox 3125 等。Ciba (registered trademark, the same applies hereinafter) IRGANOX (registered trademark, the same applies hereinafter) 1076 and Ciba IRGAFOS (registered trademark, the same applies 168) obtained by Ciba Specialty Chemicals Co., Ltd. Further, as the other antioxidant, for example, Ciba Irganox (registered trademark, the same as below) 129 'Ciba Irganox 1330 'Ciba Irganox 1010 'Ciba Cyanox (registered trademark 'the same below) 1790, Ciba Irganox (registered trademark) 3 114, Ciba can be used. Irganox 3125 and so on.
芯層用清漆可藉由如下方式製備,即根據下述之塗布法 及所期望之膜厚,以使芯層用清漆之黏度(常溫)較好的是 達到100〜10000 cp左右’更好的是達到150〜5000 cP左右, 進而更好的是達到200〜3500 CP左右的方式來適當地調節 溶劑量。 可藉由將上述芯層用清漆塗布於支持基板上而形成芯層 膜材料100。作為支持基板,例如可使用石夕基板、二氧化 梦基板、玻璃基板、石英基板、聚對苯二甲酸乙二酯 (PET,Polyethylene Terephthalate)膜等。作為塗布法例 如可列舉刮刀法、旋塗法、浸潰法、台式塗布法、噴塗 法、敷料II塗布法、簾塗法、模塗法等方法,但並不限定 ^該等。塗狀厚度並無特職定,q使其厚度於乾燥 前之狀態下為5〜200 μιη左右,較好的是15〜125 μιη左右, 更好的是25〜1〇〇 μπι左右即可。 繼而’可藉由去除塗膜中之溶劑(去溶劑),即進行乾燥 而獲得芯層膜材料1GG。作為去溶劑(乾燥)之方法,例如 列舉加熱、於大氣壓或減壓T之放置、惰性氣料之 138984.doc _39· 201009408 (喷射)等方法,較好的β 藉此,可比較容=:例使用加熱板之加熱的方法。 料時間地去溶劑。於進行加熱之产 形時,加熱溫度較好的是 熟之障The varnish for the core layer can be prepared by the following coating method and the desired film thickness, so that the viscosity of the varnish for the core layer (normal temperature) is preferably about 100 to 10,000 cp. It is about 150~5000 cP, and it is better to reach the range of 200~3500 CP to adjust the amount of solvent appropriately. The core film material 100 can be formed by applying the above-mentioned core layer varnish to a support substrate. As the support substrate, for example, a stone substrate, a dioxide dioxide substrate, a glass substrate, a quartz substrate, a polyethylene terephthalate (PET) film or the like can be used. Examples of the coating method include a doctor blade method, a spin coating method, a dipping method, a table coating method, a spray coating method, a dressing II coating method, a curtain coating method, and a die coating method, but are not limited thereto. The thickness of the coating is not specified, and the thickness thereof is about 5 to 200 μmη in the state before drying, preferably about 15 to 125 μm, and more preferably about 25 to 1 μm. Then, the core film material 1GG can be obtained by removing the solvent (desolvation) in the coating film, i.e., drying. As a method of removing the solvent (drying), for example, heating, placing at atmospheric pressure or reduced pressure T, 138984.doc _39· 201009408 (injection) of an inert gas material, etc., preferably β, by comparison, can be compared: For example, a method of heating a hot plate is used. Time to remove the solvent. In the case of heating, the heating temperature is better than the cooked barrier.
七七勺 C左右,更好的是30〜45VSeven or seven spoons C or so, better 30~45V
左右。又,加熱時間齡 C 吁間較好的疋15〜60分鐘左右,更杯&曰 15〜30分鐘左右。 炅好的疋 對於所獲得之芯層膜材料1〇〇而言可 持基板剝離而選擇性地對其照射第〗紫外光。^為^ = 地照射第1紫外光之方法,可準備形成有開口 (孔 (掩遮罩m〇,經由該光罩12_層膜材料刚 =。於圖u所示之例中,第1紫外光之照射 : 覆部102。因此,於出l丄 、先罩120中形成有與所應形成之包 102之圖案相等同之開口 (孔)。該開口係形成使所照射之第 1糸外光透射之透射部者。 光罩120可為預先形成(另外形成)者(例如板狀之光罩), 亦可為藉由例如氣相成膜法或塗布法㈣成於芯層膜材料 100上者。作為光罩12〇之較佳者之例,可列舉利用石英玻 璃或PET基材等所製作之鮮、圖罩,利用氣相成膜法(蒸 鐘、_等)所形成之金屬膜等,該等之中特別好的是使 用光罩或其原因在於:可精度較佳地形成微細之圖 案,同時易於操作,從而有利於提昇生產性。 所使用之第1紫外光只要係可使第丨光酸產生劑產生光化 學反應(變化)者即可。尤其,第丨紫外光根據所使用之第工 光酸產生劑之種類、及含有增感劑時之增感劑之種類等而 適當地選擇’較好的是使用於波長為2〇〇〜45〇 nm之範圍内 138984.doc •40· 201009408 具有峰值波長者。又,第i紫外光之照射量較好的是〇丨〜9 J/cm2左右,更好的是〇 2〜6 J/cm2左右,進而更好的是 0.2〜3 J/cm2左右。藉此,能夠可靠地使第i光酸產生劑活 化。 若經由光罩120對芯層膜材料1〇〇照射第1紫外光,則受 到第1紫外光照射之照射區域内所存在之脫離劑,因第i紫 外光之作用而反應(鍵結)或分解,從而釋放(產生)陽離子 (質子或其他陽離子)與弱配位陰離子(WCA)。然後,陽離 子使脫離性基自身從主鏈中脫離、或者自脫離性基之分子 結構之中途進行切割(光褪色)。藉此,照射區域中之完整 狀態之脫離性基之數量較未照射區域減少,其折射率朝較 第1折射率更低之第2折射率下降。再者,此時,未照射區 域940之折射率維持著第}折射率。由此,於照射區域與未 照射區域之間產生折射率差(第2折射率〈第丨折射率),從 而形成芯部101 (未照射區域)與包覆部丨02(照射區域)。再 者,於此情形時,第1紫外光之照射量較好的是〇1〜9 J/cm2左右,更好的是〇.3〜6 J/em2左右,進而更好的是 〇_6〜6 J/cm2左右。藉此’能夠可靠地使脫離劑活化。 繼而,視需要,對芯層膜材料1〇〇實施加熱處理。藉由 加熱處理,自聚合物中脫離(切割)之脫離性基例如自照射 區域中去除、或者於聚合物内進行再排列或交聯。進而, 此時,可認為殘存於包覆部1〇2(照射區域)中之脫離性基之 一部分進一步脫離(切割因此,藉由實施此種加熱處 理,可使怒部1〇1與包覆部102之間之折射率差變得更大。 138984.doc 41 201009408 該加熱處理中之加埶、、田存 ⑹熱-度亚無特別限定,較好的是 … 右’更好的是85〜we左右。又,加熱時間設 疋成可自照射區域φ古八& l μ *… 除已脫離(切割)之脫離性 基,並無特別限定,較好的是〇.5〜3小時左右,更好的是 J時左右。又’視需要,亦可追加一次或複數次加 熱處理(例如15〇〜縦Cxl〜8小時左右)之步驟。再者,例 如當於實施加熱處理之前之狀態下,於芯部ι〇ι與包覆部 102之間可獲得足夠之折射率差等之情料,可省略此種 加熱步驟。經過以上之步驟形成包含芯部1〇1與包覆部102 之芯層110。其後,將芯層11〇自支持基板上剝離。 較佳之態樣中,係芯部101與包覆部1〇2係以降福稀系聚 合物為主要材料而構成’該降宿稀系聚合物含有主鏈、以 及自主鏈中分支且分子結構之至少一部分可自主鍵中脫離 之脫離性基,芯部1G1與包覆部⑽因與主鏈鍵結之狀態的 脫離性基之數量不同,而導致該等之折射率不同。 於芯層膜材料1〇〇進一步含有與上述聚合物相容、且具 有與上述聚合物不同之折射率之單體及原觸媒的情形時, 若經由光罩120對芯層膜材料100照射第i紫外光則受到 第1紫外光照射之照射區域内所存在之第i光酸產生劑因第 1紫外光之作用而反應或分解,從而釋放(產生)陽離子(質 子或其他陽離子)與弱配位陰離子(WCA)。然後,該等陽 離子或弱配位陰離子使存在於照射區域内之原觸媒之分子 結構產生變化(分解),而將其轉變成活性潛在狀態(潛在活 性狀態)。此處,所謂活性潛在狀態(或潛在活性狀態)之原 138984.doc -42· 201009408 觸媒係指處於如下狀態中之觸媒前驅物,即活化溫度較原 本之活化溫度下降,若溫度不上升,即於室溫程度下,則 無法於照射區域内使單體產生反應。因此,若於照射第上 紫外光後亦以例如_4〇ec左右之溫度來保管芯層膜材料 100 ’則可維持該狀態而不會使單體產生反應。因此,預 先準備複數個照射第1紫外光後之芯層膜材料1〇〇,並對該 等一併實施加熱處理’藉此可獲得芯層i 10,就該點而言 便利性較高。 再者,於使用如雷射光之指向性較高之光作為第丨紫外 光之情形時’亦可省略光罩12〇之使用。 繼而,對芯層膜材料100實施加熱處理(第】加熱處理)。 藉此,於照射區域内,活性潛在狀態之原觸媒得以活化 (變成活性狀態),從而使單體產生反應(聚合反應或交聯反 應)。然後,若單體進行反應,則照射區域内之單體濃度 緩慢下降。藉此,於照射區域與未照射區域之間,單體濃 度產生差異,為了消除該差異,單體自未照射區域擴散而 集中至照射區域中。其結果,於照射區域中,單體或其反 應物(聚合物、交聯結構或分支結構)增加,源自單體之結 構對該區域之折射率造成較大之影響,從而導致照射區域 之折射率朝較第1折射率更低之第2折射率下降。再者,作 為單體之聚合物,主要生成加成(共)聚合物。另一方面, 於未照射區域中,藉由單體自該區域朝照射區域擴散,單 體1減少,因此聚合物對該區域之折射率顯現出較大之影 響,從而導致未照射區域之折射率朝較第丨折射率更高之 138984.doc •43· 201009408 第3折射率上升。由此,於照射區域與未照射區域之間產 生折射率差(第2折射率〈第3折射率),從而形成芯部1〇1(未 照射區域)與包覆部102(照射區域)。 該加熱處埋中之加熱溫度並無特別限定,較好的是 30〜80°C左右,更好的是40〜60乞左右。又,加熱時間較好 的是以使照射區域内之單體之反應大致完成之方式設定, 具體而言,較好的是〇.卜2小時左右,更好的是小時 左右。 繼而,對芯層膜材料100實施第2加熱處理。藉此,直接 或伴隨第1光酸產生劑之活化而使殘存於未照射區域及/或 照射區域中之原觸媒活化(變成活性狀態),藉此使殘存於 各區域中之單體產生反應。如此,藉由使殘存於各區域中 之早體產生反應,可實現所獲得之芯部】〇1及包覆部102之 穩定化。 該第2加熱處理中之加熱溫度只要係可使原觸媒或第丄光 酸產生劑活化之溫度即可,並無特別限定,較好的是 70〜100°C左右,更好的是80〜90t:左右。又’加熱時間較 好的是〇.5~2小時左右,更好的是0.5M小時左右。 繼而’對芯層膜材料1〇〇實施第3加熱處理。藉此,可謀 求所獲得之芯層11 0中所產生之内部應力之減少、或者μ 部101及包覆部102之更穩定化。 該第3加熱處理中之加熱溫度較好的是設定為較第2 處理中之加熱溫度高2(TC以上’具體而言,較好的是 90〜180°C左右’更好的是120~16(TC左右。又,加熱時間 13S984.doc -44 - 201009408 較好的是0.5〜2小時左右,更好的是o.w小時左右。經過 以上之步驟形成包含芯部101與包覆部102之芯層11〇。其 後’將芯層110自支持基板上剝離。 作為用以形成包覆層210之包覆層膜材料2〇〇,例如可列 舉丙烯酸系樹脂,甲基丙烯酸系樹脂、聚碳酸酯、聚苯乙 烯、環氧樹脂、聚醯胺、聚醯亞胺、聚苯并吒唑、苯環丁 烯系樹脂或降福烯系樹脂等環狀烯烴系樹脂等,且可將該 #之中之-種或兩㈣上加則且合使用(高分子混合物、 聚合物摻合物(混合物)、共聚物、複合體(積層體)等)。該 等之中,尤其就耐熱性優異之觀點而言,較好的是使用環 ^樹脂、聚Si亞胺、聚苯并十卜苯環丁稀系樹脂或㈣ 稀系樹脂等環狀烯烴系樹脂,或者包含該等者(以該等為 主者),特別好的是以降葙烯系樹脂(降葙烯系聚合物)為主 者。 由於降宿稀系聚合物之耐熱性極其高,故而對於將其用 φ 作包覆層210之構成材料之光波導240而言,即便當光波導 240上形成導體層(未圖示)時、對該導體層進行加工而形成 配線時、安裝光學元件時等進行加熱,亦可防止包覆層 • 210軟化而變形。又’由於降格烯系聚合物具有較高之疏 水性,因此可獲得不易產生因吸水所導致之尺寸變化等的 包覆層210。進而,就降宿稀系聚合物或作為其原料之降 宿稀系單體比較便宜,且易於獲得之觀點而言亦較好。 若使用以降葙烯系聚合物為主者作為包覆層之材 料,則由於種類與可較好地用作芯層11〇之構成材料的材 138984.doc •45· 201009408 料相同,因此包覆層210與芯層110之密著性變得更高,從 而可防止包覆層210與芯層110之間之層間剝離。由此,可 獲得耐久性優異之光波導240。 作為此種降稀系聚合物,例如可列舉⑴將降福稀型 早體加成(共)聚合所獲得之降搐烯型單體之加成(共)聚合 物,⑺降㈣型單體與乙烯或心烯烴類之加成共聚物, (3)降格稀型單體與非共輛二烯、及視需要之其他單體之加 成共聚物之類的加成聚合物,(4)降福烯型單體之開環(共) 聚合物、及視需要將該(共)聚合物氫化而成之樹脂,(5)降 φ 痛烯型單體與乙烯或α-烯烴類之開環共聚物、及視需要將 該(共)聚合物氫化而成之樹脂,(6)降宿烯型單體與非共軛 二烯、或其他單體之開環共聚物,及視需要將該(共)聚合 物氫化而成之聚合物之類的開環聚合物。作為該等聚合 物,可列舉隨機共聚物、嵌段共聚物、交替共聚物等。 该等降福烯系聚合物例如可藉由開環複分解聚合 (ROMP)、ROMP與氫化反應之組合、自由基或陽離子之聚 合、使用陽離子性鈀聚合起始劑之聚合、使用除此以外之 〇 聚合起始劑(例如鎳或其他過渡金屬之聚合起始劑)之聚合 等公知之所有的聚合方法而獲得。該等之中,作為降莅烯 系聚合物,較好的是加成(共)聚合物。加成(共)聚合物就 富有透明性、耐熱性及可撓性之觀點而言亦較好。尤其, 降葙稀系聚合物較好的是包含降葙稀之重複單元者,兮降 福烯之重複單元含有包含聚合性基之取代基、或者含有包 含芳基之取代基。 138984.doc •46· 201009408 藉由包含降莅烯之重複單元,該降格烯之重複單元含有 包含聚合性基之取代基’於包覆層2丨〇中,可使降搐烯系 t合物之至少一部分者之聚合性基彼此直接或經由交聯劑 而交聯。又,亦可藉由聚合性基之種類、交聯劑之種類、 用於芯層1 10之聚合物之種類等,使該降蓓烯系聚合物與 用於芯層110之聚合物交聯。換言之,上述降莅稀系聚合 物較好的是其至少一部分者於聚合性基上進行交聯。其結 果,可實現包覆層210自身之強度或包覆層21〇與芯層11〇 之密著性之進一步提昇。 作為此種包含聚合性基之降宿烯之重複單元,較好的是 含有包含環氧基之取代基的降搐烯之重複單元、含有包含 (曱基)丙烯醯基之取代基的降福烯之重複單元、及含有包 含院氧基矽烷基之取代基的降葙烯之重複單元之中之至少 一種。該等聚合性基就於各種聚合性基之中反應性較高之 觀點而言較好。又’若使用含有兩種以上此種包含聚合性 基之降福烯之重複單元者,則可進一步提昇交聯密度,從 而使上述效果更顯著。 另一方面,藉由包含降蓓烯之重複單元,該降葙烯之重 複單元含有包含芳基之取代基,由於芳基之疏水性極其 高,因此能夠更可靠地防止包覆層21〇因吸水而引起之尺 寸變化等。又,由於芳基之脂溶性(親油性)優異,與如上 述之芯層110中所使用之聚合物之親和性較高,因此能夠 更可靠地防止包覆層210與芯層110之間之層間剝離,從而 可獲得耐久性更優異之光波導240。 138984.doc -47- 201009408 進而’降葙烯系聚合物較好的是包含烷基降葙稀之重複 單元者。再者’烷基可為直鏈狀或支鏈狀中之任一者。藉 由包含烷基降葙烯之重複單元,降葙烯系聚合物之柔敕性 變高,因此可對包覆層210賦予較高之柔韌性(可撓性)。 又,包含烷基降葙烯之重複單元之降葙烯系聚合物就 對於如上述之波長區域(特別是850 nmw近之波長區域)之 光的透射率優異之觀點而言,亦較好。 再者,用於包覆層210之降袼烯系聚合物較好的是折射 率比較低者,相對於此’若包含降葙烯之重複單元,該降 宿烯之重複單元含有包含芳基之取代基,則通常表現出折 射率變高之傾向,但藉由包含烷基降福烯之重複單元,亦 可防止折射率之上升。 由此,作為用於包覆層210之降宿烯系聚合物,較好的 是以下述化16〜19或化23所表示者··about. Also, the heating time is better than the C 吁 15~60 minutes, and the cup & 曰 15~30 minutes.炅 疋 For the obtained core film material 1 可, the substrate can be peeled off and selectively irradiated with ultraviolet light. ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Irradiation of ultraviolet light: the covering portion 102. Therefore, an opening (a hole) equivalent to the pattern of the bag 102 to be formed is formed in the first cover 120. The opening is formed so that the first opening is irradiated. The transmissive portion of the external light transmission may be formed in advance (otherwise formed) (for example, a plate-shaped photomask), or may be formed into a core film material by, for example, a vapor phase film formation method or a coating method (4). As an example of the preferred one of the photomasks 12, a fresh mask made of quartz glass or a PET substrate or the like can be used, which is formed by a vapor phase film formation method (steaming, _, etc.). Among the metal films and the like, it is particularly preferable to use a photomask or the reason that the fine pattern can be formed with high precision and is easy to handle, thereby facilitating the improvement of productivity. It can be used to produce a photochemical reaction (change) of the bismuth photoacid generator. In particular, the 丨 ultraviolet light is based on The type of the photo-acid generator to be used and the type of the sensitizer when the sensitizer is used are appropriately selected, and it is preferably used in the range of 2 〇〇 to 45 〇 nm in the range of 138,984. Doc •40· 201009408 It has a peak wavelength. Also, the irradiation amount of the i-th ultraviolet light is preferably about 99 J/cm2, more preferably about 〜2 to 6 J/cm2, and even better. 0.2 to 3 J/cm 2 or so. Thereby, the ith photoacid generator can be reliably activated. When the first layer of ultraviolet light is irradiated to the core film material 1 through the mask 120, the first ultraviolet light is irradiated. The detaching agent present in the irradiation region reacts (bonds) or decomposes due to the action of the ith ultraviolet light, thereby releasing (generating) a cation (proton or other cation) and a weakly coordinating anion (WCA). Then, the cation makes The detachment group itself detaches from the main chain or cuts (light fading) in the middle of the molecular structure of the detachment group. Thereby, the number of detachment groups in the complete state in the irradiation region is smaller than that in the unirradiated region, and the refracting thereof The second refractive index is lower than the first refractive index Further, at this time, the refractive index of the unirradiated region 940 maintains the refractive index of the first refractive index. Thus, a refractive index difference (second refractive index <th order refractive index) is generated between the irradiated region and the non-irradiated region. Thereby, the core portion 101 (unirradiated region) and the cladding portion 丨02 (irradiation region) are formed. Further, in this case, the irradiation amount of the first ultraviolet light is preferably about 1 to 9 J/cm 2 , and more Preferably, it is about 3 to 6 J/em2, and more preferably about _6 to 6 J/cm2. By this, it is possible to reliably activate the release agent. Then, as needed, the core film material 1 The heat treatment is carried out. The heat-off treatment removes (cuts) the release group from the polymer, for example, from the irradiated region, or rearranges or crosslinks in the polymer. Further, at this time, it is considered that one part of the detachable group remaining in the coating portion 1〇2 (irradiation region) is further detached (cutting, therefore, by performing such heat treatment, the anger portion 1〇1 and the cladding portion can be coated The difference in refractive index between the portions 102 becomes larger. 138984.doc 41 201009408 The heat treatment is not particularly limited in the heat treatment, and the heat storage is not particularly limited, and the right one is better. Further, the heating time is set to be self-irradiating area φ古八& l μ *... In addition to the detachment group which has been detached (cut), it is not particularly limited, and preferably 〇. 5 to 3 hours Left and right, it is better to be around J. In addition, 'option may be added one or more times of heat treatment (for example, 15 〇 ~ 縦 Cxl ~ 8 hours or so). Further, for example, before performing heat treatment In the state, a sufficient refractive index difference or the like can be obtained between the core portion ι〇ι and the cladding portion 102, and such a heating step can be omitted. The core portion 1〇1 and the cladding portion are formed through the above steps. The core layer 110 of 102. Thereafter, the core layer 11 is peeled off from the support substrate. In the sample, the core portion 101 and the cladding portion 1〇2 are composed of a reduced-fat polymer as a main material, and the reduced-thin polymer contains a main chain and a branch in the autonomous chain, and at least a part of the molecular structure can be The detachment group which is detached from the autonomous bond, the core portion 1G1 and the coating portion (10) are different in the number of the detachment groups in the state of the bond with the main chain, and the refractive index of the core portion is different. Further, when a monomer and a primary catalyst which are compatible with the above polymer and have a refractive index different from the above polymer are contained, the first ultraviolet light is irradiated to the core film material 100 via the mask 120. The ith photoacid generator present in the irradiation region irradiated with light reacts or decomposes due to the action of the first ultraviolet light, thereby releasing (generating) a cation (proton or other cation) and a weakly coordinating anion (WCA). Then, The cation or weakly coordinating anion changes (decomposes) the molecular structure of the original catalyst present in the irradiation region, and converts it into an active latent state (potential active state). Here, the potential of the activity State (or potential active state) of the original 138984.doc -42· 201009408 Catalyst refers to the catalyst precursor in the following state, that is, the activation temperature is lower than the original activation temperature, if the temperature does not rise, that is, at room temperature In this case, the monomer cannot be reacted in the irradiation region. Therefore, if the core film material 100' is stored at a temperature of, for example, about _4 〇ec after the irradiation of the first ultraviolet light, the state can be maintained without The monomer is reacted. Therefore, a plurality of core film materials 1 照射 after the first ultraviolet light is irradiated are prepared in advance, and the heat treatment is performed on the same, whereby the core layer i 10 can be obtained, and the point is obtained. Further, when the light having higher directivity such as laser light is used as the second ultraviolet light, the use of the photomask 12 can be omitted. Then, the core film material 100 is subjected to heat treatment (first heat treatment). Thereby, in the irradiation region, the original catalyst of the active latent state is activated (becomes an active state), thereby causing a reaction (polymerization reaction or crosslinking reaction) of the monomer. Then, when the monomer is reacted, the monomer concentration in the irradiation region is gradually lowered. Thereby, the monomer concentration differs between the irradiated region and the non-irradiated region, and in order to eliminate the difference, the monomer diffuses from the unirradiated region and concentrates in the irradiated region. As a result, in the irradiation region, the monomer or its reactant (polymer, crosslinked structure or branched structure) increases, and the structure derived from the monomer causes a large influence on the refractive index of the region, thereby causing the irradiation region. The second refractive index whose refractive index is lower than the first refractive index decreases. Further, as a monomer polymer, an addition (co)polymer is mainly formed. On the other hand, in the unirradiated region, by diffusing the monomer from the region toward the irradiation region, the monomer 1 is reduced, so that the polymer exhibits a large influence on the refractive index of the region, thereby causing refraction of the unirradiated region. The rate is higher than that of the third 138 138984.doc •43· 201009408 The third index of refraction rises. Thereby, a refractive index difference (second refractive index <third refractive index) is generated between the irradiation region and the non-irradiation region, thereby forming the core portion 1〇1 (unirradiated region) and the cladding portion 102 (irradiation region). The heating temperature in which the heating is buried is not particularly limited, but is preferably about 30 to 80 ° C, more preferably about 40 to 60 Torr. Further, the heating time is preferably set such that the reaction of the monomer in the irradiation region is substantially completed. Specifically, it is preferably about 2 hours, more preferably about hours. Then, the core layer film material 100 is subjected to a second heat treatment. Thereby, the original catalyst remaining in the unirradiated region and/or the irradiation region is activated (in an active state) directly or in association with the activation of the first photoacid generator, thereby causing the monomer remaining in each region to be generated. reaction. Thus, the stabilization of the obtained core portion 〇1 and the coating portion 102 can be achieved by reacting the early bodies remaining in the respective regions. The heating temperature in the second heat treatment is not particularly limited as long as it can activate the primary catalyst or the phthalic acid generator, and is preferably about 70 to 100 ° C, more preferably 80. ~90t: around. Also, the heating time is better, about 5 to 2 hours, and more preferably about 0.5 M hours. Then, the third heat treatment was performed on the core film material 1A. Thereby, it is possible to reduce the internal stress generated in the obtained core layer 110 or to stabilize the μ portion 101 and the cladding portion 102. The heating temperature in the third heat treatment is preferably set to be higher than the heating temperature in the second treatment by 2 (TC or more 'specifically, preferably about 90 to 180 ° C' is preferably 120~ 16 (about TC. Further, the heating time 13S984.doc -44 - 201009408 is preferably about 0.5 to 2 hours, more preferably about ow hours. Through the above steps, the core including the core 101 and the cladding portion 102 is formed. Layer 11 〇. Thereafter, the core layer 110 is peeled off from the support substrate. As the coating film material 2 用以 for forming the cladding layer 210, for example, an acrylic resin, a methacrylic resin, or a polycarbonate is exemplified. a cyclic olefin resin such as an ester, a polystyrene, an epoxy resin, a polyamine, a polyimine, a polybenzoxazole, a benzocyclobutene resin or a pentene resin, and the like Among them, the above-mentioned species or two (four) are added and used together (polymer mixture, polymer blend (mixture), copolymer, composite (layered body), etc.). Among them, especially heat resistance is excellent. From the viewpoint of the use, it is preferred to use a ring resin, a polysimine, a polybenzoxaphenone A cyclic olefin-based resin such as a resin or (d) a rare resin, or the like (including those of the above), and a terpene-based resin (northene-based polymer) is particularly preferred. Since the heat-reducing property of the reduced-difficult polymer is extremely high, even when a conductive layer (not shown) is formed on the optical waveguide 240, the optical waveguide 240 using φ as a constituent material of the cladding layer 210 is When the conductor layer is processed to form wiring, heating is performed when the optical element is mounted, and the coating layer 210 can be prevented from being softened and deformed. Further, since the reduced-olefin polymer has high hydrophobicity, it is difficult to produce The coating layer 210 which changes in size due to water absorption, etc. Further, it is also preferable from the viewpoint of lowering the rare polymer or reducing the rare-type monomer as a raw material, and being easy to obtain. The material having the decene-based polymer as the coating layer is the same as the material 138984.doc •45·201009408 which is preferably used as the constituent material of the core layer 11 , so the coating layer 210 Close to the core layer 110 The properties are higher, and the interlayer peeling between the coating layer 210 and the core layer 110 can be prevented. Thereby, the optical waveguide 240 excellent in durability can be obtained. As such a reduced-thin polymer, for example, (1) Addition (co)polymer of norbornene-type monomer obtained by precipitation (co)polymerization, (7) addition copolymer of tetra-type monomer and ethylene or heart olefin, (3) An addition polymer such as a reduced copolymer of a reduced monomer and a non-co-diene, and optionally other monomers, (4) a ring-opening (co)polymer of a norbornene monomer And a resin obtained by hydrogenating the (co)polymer as needed, (5) a ring-opening copolymer of a phlegm-type monomer and ethylene or an α-olefin, and optionally the (co)polymer a hydrogenated resin, (6) a ring-opening copolymer of a pendant olefinic monomer and a non-conjugated diene or other monomer, and a polymer obtained by hydrogenating the (co)polymer as needed Open-loop polymer. As such a polymer, a random copolymer, a block copolymer, an alternating copolymer, etc. are mentioned. The pentene-based polymer can be, for example, subjected to ring-opening metathesis polymerization (ROMP), a combination of ROMP and hydrogenation reaction, polymerization of a radical or a cation, polymerization using a cationic palladium polymerization initiator, or the like. It is obtained by all known polymerization methods such as polymerization of a ruthenium polymerization initiator (for example, a polymerization initiator of nickel or another transition metal). Among these, as the pendant olefin polymer, an addition (co)polymer is preferred. The addition (co)polymer is also preferable from the viewpoint of transparency, heat resistance and flexibility. In particular, the hail-lowering polymer is preferably a repeating unit containing a reduced oxime, and the repeating unit of the fluorene-containing phenene contains a substituent containing a polymerizable group or a substituent containing an aryl group. 138984.doc •46· 201009408 By using a repeating unit containing a pendant olefin, the repeating unit of the lowering olefin contains a substituent comprising a polymerizable group in the coating layer 2, and the decene-based t compound can be obtained. At least a portion of the polymerizable groups are crosslinked with each other directly or via a crosslinking agent. Further, the norbornene-based polymer may be crosslinked with the polymer for the core layer 110 by the kind of the polymerizable group, the kind of the crosslinking agent, the kind of the polymer used for the core layer 10, and the like. . In other words, it is preferred that the above-mentioned reduced-thickness polymer is cross-linked on at least a part of the polymerizable group. As a result, the strength of the cladding layer 210 itself or the adhesion of the cladding layer 21〇 to the core layer 11〇 can be further improved. As such a repeating unit of a vinylene containing a polymerizable group, a repeating unit of a norbornene containing a substituent of an epoxy group and a substituent containing a substituent containing a (fluorenyl) acryl group are preferred. At least one of a repeating unit of an alkene and a repeating unit of a norbornene containing a substituent of a oxoalkyl group. These polymerizable groups are preferred from the viewpoints of high reactivity among various polymerizable groups. Further, when a repeating unit containing two or more such fumarenes containing a polymerizable group is used, the crosslinking density can be further increased, and the above effects are more remarkable. On the other hand, by repeating units containing norbornene, the repeating unit of the norbornene contains a substituent containing an aryl group, and since the hydrophobicity of the aryl group is extremely high, the coating layer 21 can be more reliably prevented. Dimensional changes caused by water absorption, etc. Further, since the aryl group is excellent in fat solubility (lipophilic property) and has high affinity with the polymer used in the core layer 110 as described above, it is possible to more reliably prevent the coating layer 210 from being interposed between the core layer 110 and the core layer 110. The interlayer is peeled off, whereby the optical waveguide 240 having more excellent durability can be obtained. 138984.doc -47- 201009408 Further, the decene-based polymer is preferably a repeating unit containing an alkyl group. Further, the 'alkyl group' may be either linear or branched. By the repeating unit containing an alkyl norbornene, the flexibility of the decene-based polymer becomes high, so that the coating layer 210 can be imparted with high flexibility (flexibility). Further, the norbornene-based polymer containing a repeating unit of an alkylpyridene is also preferable from the viewpoint of excellent transmittance of light in the above-mentioned wavelength region (particularly, a region near 850 nmw). Further, the norbornene-based polymer used for the coating layer 210 preferably has a relatively low refractive index, and the repeating unit of the norbornene contains an aryl group if it is a repeating unit containing a norbornene. The substituent generally exhibits a tendency to have a higher refractive index, but it is also possible to prevent an increase in the refractive index by a repeating unit containing an alkylpentene. Therefore, as the vinylene-based polymer used for the coating layer 210, it is preferred to be represented by the following 16 to 19 or 23;
上式中,R表示碳數為H〇之炫基,a表示〇〜3之整數,^ 表示卜3之整數’ p/q為2〇以下;於以上述化i6所表示之降 宿烯系聚合物之中’特別好的是R為碳數4〜1〇之炫基,且a 及b分別為1之化合物,例如較好的是丁基降福烯與曱基J 138984.doc •48- 201009408 水甘油醚降葙烯之共聚物 降葙烯之共聚物、癸基降 共聚物等; 共聚物、己基降搐烯與甲基縮水甘油醚 癸基降莅浠與甲基縮水甘油醚降福烯之In the above formula, R represents a condensed group having a carbon number of H ,, a represents an integer of 〇 〜 3 , and ^ represents an integer ' p / q of 2 〇 or less; and the olefinic system represented by the above i6 Among the polymers, it is particularly preferable that R is a compound having a carbon number of 4 to 1 fluorene, and a and b are each a compound of 1, for example, butyl pentene and sulfhydryl J 138984.doc • 48 - 201009408 Copolymer of glyceryl ether norbornene, copolymer of norbornene, thiol-reducing copolymer, etc.; copolymer, hexyl decylene and methyl glycidyl ether thiol hydrazine and methyl glycidyl ether Fuene
V0 上式中,R表示碳數為1〜1〇之烷基,…表示氫原子或甲 基,a表示〇〜3之整數,p/q為2〇以下;於以上述化17所表 不之降莅烯系聚合物之中,特別好的是R為碳數4〜1〇之烷 基,且a為1之化合物,例如丁基降葙烯與丙烯酸2(5_降宿 烯基)甲酯之共聚物、己基降莅烯與丙烯酸2_(5_降宿烯基) 甲酯之共聚物、癸基降莅烯與丙烯酸2·(5_降莅烯基)甲酯 之共聚物等;V0 In the above formula, R represents an alkyl group having a carbon number of 1 to 1 Å, ... represents a hydrogen atom or a methyl group, a represents an integer of 〇 〜 3, and p/q is 2 Å or less; Among the olefin-based polymers, particularly preferred are those wherein R is an alkyl group having 4 to 1 carbon atoms and a is 1, such as butyl norbornene and acrylic acid 2 (5-norbornyl). a copolymer of a methyl ester, a copolymer of hexyl decylene and a 2-(5-norbornyl) methyl acrylate, a copolymer of fluorenyl decylene and an acrylic acid 2 (5-northenyl) methyl ester, etc. ;
上式中,R表示碳數為1〜1〇之娱;基,X分別獨立地表示 叙數為1〜3之烧基,a表不〇〜3之整數,p/q為20以下;於以 上述化20所表示之降袼烯系聚合物之中,特別好的是尺為 碳數4〜10之烷基,a為1或2,且X為甲基或乙基之化合物, 138984.doc • 49- 201009408 例如丁基降葙烯與降莅烯基乙基三甲氧基矽烷之共聚物、 己基降葙烯與降葙烯基乙基三甲氡基矽烷之共聚物、癸基 降葙烯與降葙烯基乙基三甲氧基矽烷之共聚物、丁基降葙 烯與三乙氧基矽烷基降葙烯之共聚物、己基降葙烯與三乙 氧基矽烷基降葙烯之共聚物、癸基降袼烯與三乙氧基矽烷 基降伯烯之共聚物、丁基降莅烯與三曱氧基矽烷基降葙烯 之共聚物、[I降宿稀與三甲^基石夕统基降福稀之共聚 物、癸基降宿稀與三甲氧基石夕烧基降㈣之共聚物等·,In the above formula, R represents an entertainment having a carbon number of 1 to 1 Å; and a group of X independently represents a burning group having a number of 1 to 3, and a represents an integer of ~3, and p/q is 20 or less; Among the norbornene-based polymers represented by the above formula 20, particularly preferred are those having a carbon number of 4 to 10, a being 1 or 2, and X being a methyl or ethyl group, 138,984. Doc • 49- 201009408 For example, a copolymer of butyl norbornene with a decylethyl trimethoxy decane, a copolymer of hexyl decene with norbornenyl ethyl dimethyl decane, decyl decene Copolymer with norbornyl ethyltrimethoxydecane, copolymer of butyl norbornene and triethoxydecyldecene, copolymerization of hexylpentene and triethoxydecyl decene a copolymer of a fluorenyl decylene and a triethoxy decyl decyl urethane, a copolymer of a butyl pentene and a trimethoxy decyl decene, [I a copolymer of a base group, a copolymer of a sulfhydryl group, a copolymer of a sulfhydryl group, a copolymer of a decyl group, and a copolymer of a trimethoxy group
A1及A2分別獨立地 但並無同時為相同 上式中,R表示碳數為丨〜1〇之烷基, 表示以下述化22〜24所表示之取代基, 之取代基之情形;又,P/作為20以下;A1 and A2 are each independently but not simultaneously in the same formula, and R represents an alkyl group having a carbon number of 丨~1〇, and represents a substituent of the substituent represented by the following 22 to 24; P / as 20 or less;
上式中,a表示0〜3之整數,b表示卜3之整數;In the above formula, a represents an integer of 0 to 3, and b represents an integer of Bu 3;
138984.doc .50- 201009408 上式中,R1表示氫原子或甲基,a表示〇〜3之整數;138984.doc .50- 201009408 In the above formula, R1 represents a hydrogen atom or a methyl group, and a represents an integer of 〇~3;
上式中,X分別獨立地表示碳數為丨〜3之烷基,a表示〇〜3 之整數;作為以上述化19所表示之降蓓烯系聚合物,例如 可列舉丁基降莅烯、己基降莅烯或癸基降搐稀中之任一者 與丙烯酸2-(5-降莅烯基)甲酯,以及降葙烯基乙基三甲氧 基矽烷、三乙氧基矽烷基降莅烯或三甲氧基矽烷基降福烯 中之任一者的三元共聚物; 丁基降福烯、己基降蓓烯或癸 基降宿烯中之任一者與丙烯酸2_(5•降福烯基)甲酯,以及 甲基縮水甘油醚降葙烯之三元共聚物;丁基降莅烯、己基 降宿稀或癸基降福烯中之任一者與甲基縮水甘油醚降搐 烯、降莅烯基乙基三甲氧基矽烷、三乙氧基矽烷基降福烯 或二曱氧基矽烧基降宿烯中之任一者的三元共聚物等;In the above formula, X each independently represents an alkyl group having a carbon number of 丨3, and a represents an integer of 〇~3; and as the norbornene-based polymer represented by the above-mentioned formula 19, for example, butyl norbornene is exemplified. Any of hexyl decene or fluorenyl thiol and 2-(5-northenyl)methyl acrylate, and nordecenylethyltrimethoxy decane, triethoxy decyl alkyl a terpolymer of either olefin or trimethoxydecyl pentene; any of butyl norbornene, hexyl decene or decyl pentene and acrylic acid 2_(5• a terpene methyl ester, and a terpolymer of methyl glycidyl ether norbornene; any of butyl norbornene, hexyl sulphate or decyl pentene and methyl glycidyl ether a ternary copolymer of any one of a terpene, a decyl-ethylenoxy decane, a triethoxy decyl pentene or a dimethoxy fluorenyl pentene;
上式中,R表示碳數為1〜10之烷基,R2表示氫原子、甲 基或乙基’ Ar表示芳基,X1表示氧原子或亞甲基,X2表示 碳原子或石夕原子’ a表示〇〜3之整數’ c表示1〜3之整數, 138984.doc -51 - 201009408 p/q為20以下;於以上述化23所表示之降㈣系聚合物之 中,特別好的是R為碳數4〜1〇之烷基,^為氧原子,&為 矽原子,Ar為苯基’ R2為甲基,…,且…之化合物: 例如丁基降㈣與二苯基甲基降㈣f氧基錢之共聚 物、己基降福稀與i苯基甲基降㈣甲氧基碎烧之共聚 物、癸基降㈣與二苯基甲基降_甲氧基钱之共^物 等;或者R為碳數4〜10之烷基,义為亞甲基,&為碳原 子’ Ar為苯基’ R2為氫原子,&為〇,且…之化合物例 如丁基㈣烯與苯乙基降㈣之共聚物、己基降㈣與苯 乙基降㈣之共㈣、癸基㈣稀與$乙基降㈣之共聚 物等;又,p/q或P/q+r只要為2〇以下即可,較好的是15以 下,更好的是0.1〜10左右;藉此,包含複數種降袼烯之重 複單元之效果得以充分地發揮。 如以上之降葙烯系聚合物,除上述之特性以外,其折射 率比較低,藉由以上述降花烯系聚合物為主材料構成包覆 層210,可進一步提昇光波導24〇之光傳輸性能。 再者,於降葙烯系聚合物包含降葙烯之重複單元之情形 時,該降葙烯之重複單元含有包含(甲基)丙烯醯基之取代 基,(曱基)丙烯醯基彼此可藉由加熱而比較容易地進行交 聯(聚合),且藉由於包覆層膜材料中混合自由基產生劑, 可促進(甲基)丙稀酿基彼此之交聯反應。 作為自由基產生劑,例如可較好地使用2,2_二甲氧基_ 1,2-二苯基乙烷-1-酮、丨’^雙(第三丁基過氧化)_3,3,5•三甲 基環己烷等。 138984.doc -52· 201009408 又,於㈣烯系聚合物包含降㈣之重複單元之情形 時,該㈣烯之重複單元含有包含環氧基之取代基的㈣ 烯之重複單元、或者含有包含燒氧基錢基之取代基,為 了使该等聚合性基彼此直接交聯,預先於包覆層膜材料中 混口上述之光酸產生劑’藉由該物質之作用使環氧基或烧 氧基梦院基進行交聯即可。 ^方面’為了使環氧基彼此、(甲基)丙烯酿基彼此或 烷氧基矽烷基彼此經由交聯劑進行交聯,進而於包覆層膜 材料中混合作為交聯劑之含有至少一個與各聚合性基相對 應之聚合性基的化合物即可。 作為3有環氧基之父聯劑,例如可較好地使用3 '縮水甘 油氧基丙基三甲氧基錢(Y_Gps)、聚魏·環氧樹脂等。 作為含有(甲基)丙烯醯基之交聯劑,例如可較好地使用夂 甲基丙烯醯氧基丙基三曱氡基矽烷三環[52ι〇26]癸烷二 甲酵二丙婦酸醋、三丙二醇二丙稀酸醋等。作為含有烧氧 基矽烷基之交聯劑,例如可較好地使用3縮水甘油氧基丙 基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷之類的矽烷偶 合劑等。 又,亦可於包覆層膜材料2〇〇中添加(混合)各種添加 劑。例如亦可於包覆層膜材料2〇〇中混合上述芯層膜材料 100中所列舉之單體及原觸媒。藉此,可使單體於包覆層 210中反應,從而使包覆層21〇之折射率發生變化。尤其, 若使用包含交聯性單體者作為單體,則於包覆層21〇中, 可使降莅烯系聚合物之至少一部分者經由交聯性單體進行 138984.doc •53- 201009408 交聯。又,亦可藉由交聯劑之種類、用於芯層iι〇之聚合 物之種類等,使該降袼烯系聚合物與用於芯層11〇之聚合 物進行交聯。 作為其他添加劑,可列舉如上述之抗氧化劑。藉由混合 抗氧化劑,可防止包覆層膜材料200(降葙烯系聚合物)因氧 化而引起之劣化。 作為包覆層膜材料200中所包含之第2光酸產生劑,可使 用於紫外光中之吸收極大波長(第2吸收極大波長)與第i光 酸產生劑之第1吸收極大波長不同者。較好的是第2吸收極 大波長較第1吸收極大波長更長,尤其好的是第丨吸收極大 波長未滿300 nm ’且第2吸收極大波長為300 ηηι以上。 作為此種第2光酸產生劑,除四(五氟苯基)硼酸鹽或六 氟銻酸鹽以外,例如可列舉四(五氟苯基)鎵酸鹽、鋁酸鹽 類、銻酸鹽類、其他硼酸鹽類、鎵酸鹽類、碳硼烷類、鹵 代碳硼烷類等。 作為此種第2光酸產生劑之市售品,例如可列舉可自曰 本東京之東洋油墨製造股份有限公司獲得之「TAG_ 3 82」、可自日本東京之Midori Kagaku工業股份有限公司 獲得之「NAI-105(CAS編號第85342-62-7號)」等。 於使用TAG-3 82作為第2光酸產生劑之情形時,作為第2 紫外光之照射機構,可較好地使用高壓水銀燈或金屬齒化 物燈。藉此,可對包覆層膜材料200供給300 nm以上之充 足之能量之紫外光,從而可高效地分解TAG-382而產生上 述之酸。 138984.doc -54- 201009408 當形成包覆層膜材料200時,製備包含上述聚合物、第2 光酸產生劑及其他所需之添加劑之包覆層用清漆。作為用 於包覆層用清漆之製備之溶劑,可列舉與上述之怒層用清 漆之製備中所使用之溶劑相同者。又,視需要,亦可於包 • I層用'月漆中添加具有如下功能之增感劑,即增大第2光 1產生劑對於第2紫外光之感度,減少其活化(反應或分解) 2需要之0寺間或⑥量’或者將第2紫外光之波長轉變成適 纟於其活化之波長。作為此種增感劑,可列舉與上述之芯 制清漆中所添加之增感劑相同者。進而,視需要,亦可 於包覆層用清漆中添加防止所不期望之自由基之產生或聚 合物之自然氧化的抗氧化劑。作為此種抗氧化劑,可列舉 與上述之芯層用清漆中所添加之抗氧化劑相同者。 包覆層用清漆可藉由如下方式製備,即根據下述之塗布 法=所期望之膜厚,以使包覆層用清漆之黏度(常溫)較好 的疋達到1G0〜10GG0 eP左右,更好的是達到15。〜5麵左 • 右,進而更好的是達到200〜35〇〇 cP左右的方式適當地調 節溶劑量。 彳藉由將上述包覆層用清漆塗布於支持基板上來形成包 覆層膜材料200。作為支持基板,例如可使用石夕基板、二 ’ t切基板、玻璃基板、石英基板、聚對笨三甲酸乙二酿 (PET)膜等。作為塗布法,例如可列舉到刀法、旋塗法、 浸潰法、台式塗布法、喷塗法、敷料器塗布法、簾塗法、 模=法等方法,但並不限定於該等。塗膜之厚度並無特別 限疋、要使其厚度於乾燥前之狀態下為5〜200 μηι左右, 138984.doc 55- 201009408 較好的是ίο〜刚_左右,更好的是15〜65叫左右即可。 繼而’可藉由去除塗膜中之溶劑(去溶劑),即進行乾燥 而獲得包覆層膜材料200。作為去溶劑(乾燥)之方法例如 可列舉加熱、於大氣壓或減壓下之放置、惰性氣體等之噴 附(喷射)等方法’較好的是例如使用加熱板之加熱的方 法。藉此,可比較容易地且短時間地去溶劑。於進行加熱 之情形時’加熱溫度較好的是25〜6(rc左右,更好的是 3〇〜45t左右。又,加熱時間較好的是15〜6〇分鐘左右更 好的是15〜30分鐘左右。 _ 將所獲得之包覆層㈣料自上述支持基板上剝離, 其後使其接觸芯層110之一面或兩面而相互地熱麼接。對 於熱壓接而5,較為便利的是可使用例如貼合機。若利用 後照射法,則由於受到熱壓接之包覆層膜材料2〇〇處於未 ·、、、射糸外光之Tg較低之狀態中,因此可於如不使設置於芯 部之中空鏡結構體受損之低溫、低壓下實施熱壓接步驟。 作為熱壓接之溫度,通常只要設定於80〜13(rc,較好的是 100〜120°c之範圍内即可。作為熱壓接之壓力,通常只要❹ 設定於0.1〜10 MPa,較好的是0.1〜4 MPa之範圍内即可。 再者,當進行熱壓接時,不會自包覆層膜材料2〇〇中所包 含之第2光酸產生劑中釋放出酸。 當進行上述之熱壓接步驟時,視需要採用減壓環境或真 空’藉此將可於積層時混入包覆層膜材料2〇〇與芯層u〇< 間而殘留之空氣等氣體成分抑制為最小限度,由此於抑制 接觸部之空隙之產生、獲得平坦性良好之積層體230方面 138984.doc •56- 201009408 :好*於此情$ _,中空鏡結構體之内部亦形纟減麼空氣 或真二,但只要不發生包覆層之陷落等,即只要中空鏡結 構體不變形,則無問題。減壓環境或真空可應用於包覆層 、材料200與心層!丨〇之接觸時、或包覆層膜材料與芯 • I UG之熱壓接時、或者該等雙方。減壓環境或真空之應 用藉由採用真空層壓、真空壓製等而可實現。 繼而,例如使用波長截止濾光片220,對積層體230之整 攀 個面照射包含第2吸收極大波長而不包含第1吸收極大波長 之波長的第2紫外光,藉此將包覆層膜材料2〇〇轉化成包覆 層210,同時提昇芯層i 1〇與包覆層21〇之間之密著性。例 如於第1吸收極大波長未滿3〇〇 nm,第2吸收極大波長為 300 nm以上之情形時,可對積層體23〇之整個面照射波長 為300 nm以上之第2紫外光。藉由第2紫外光之全面照射, 自包覆層膜材料200中所包含之第2光酸產生劑中釋放出 酸。另一方面,芯層11 〇中所包含之第i光酸產生劑實質上 • 未對第2紫外光產生感應,因此不存在芯部1〇1之折射率發 生變化或下降(包覆部化)之情形《自第2光酸產生劑中所釋 放出之酸對經由包覆層膜材料2〇〇之構成聚合物之聚合性 基的交聯反應進行催化。例如,於構成聚合物含有環氧基 ’ 之情形時’藉由第2光酸產生劑中所釋放出之酸而開始環 氧基之陽離子聚合’並於包覆層膜材料2〇0之内部形成交 聯結構’從而使得包覆層21 〇之強度得以提昇。又,於相 鄰接之芯層110之構成聚合物中包含可參與該交聯反應之 聚合性基(例如環氧基)之情形時,上述陽離子聚合亦波及 138984.doc -57- 201009408 至芯層110,而於包覆層210與芯層i 1〇之間形成有交聯結 構,從而使得該等之間之密著性得以提昇。 第外光之照射量較好的是10〜1000 J/cm2左右更好 的是10〜500 J/cm2左右,進而更好的是1〇〜3〇〇 j/cm2左右。 藉此,能夠可靠地使第2光酸產生劑活化。 其後,視需要,對積層體23〇實施加熱處理來完成包覆 層210之交聯反應。該加熱處理可不進行加壓地以批量處 理(烘箱加熱)來同時處理複數個積層體23〇,因此光波導 240之生產性得以提昇。加熱溫度並無特別限定,較好的 是100〜180C左右,更好的是12〇〜15〇〇c左右。又,加熱時 間設定成可足夠使交聯(硬化)反應停止,並無特別限定, 較好的是30〜120分鐘左右,更好的是45〜9〇分鐘左右。 圖16表示包含上述之光波導與發光元件及/或受光元件 之光波導模組350 ^如圖16所示,本發明之光波導模組35〇 包含光波導與發光元件及/或受光元件355,該光波導包含 上部包覆層35 1、芯部3 52、下部包覆層353及中空鏡結構 體354 ’該發光元件及/或受光元件355藉由支持構件357而 搭載於該光波導上。藉由本發明之中空鏡結構體之鏡面, 將自發光元件355之發光部3 56透射上部包覆層351而朝光 波導之芯部352入射之光、或者自光波導之芯部352透射上 部包覆層351而朝受光元件3 55之受光部356出射之光的光 路LP轉換成大致垂直方向。關於此種光波導模組中之發光 元件及/或受光元件,可參照曰本專利特開2005-321560號 公報、日本專利特開2004-193610號公報及日本專利特開 138984.doc -58- 201009408 平9-148621號公報。 圖17表示包含上述之光波導模組與電路基板之光元件安 裝基板360。如圖17所示,本發明之光元件安裝基板36〇包 含光波導模組A與電路基板B。如圖1 7所示,光波導模組a 包含光波導與發光元件及/或受光元件365,該光波導包含 上部包覆層361、芯部362、下部包覆層363及中空鏡結構 體364 ’該發光元件及/或受光元件365經由金屬突起部367 及電極墊368而搭載於該光波導上。形成於電路基板b上之 導體電路369經由金屬突起部367及電極墊368而與發光元 件及/或受光元件365電性連接(未圖示)。作為光元件安裝 基板360之動作’例如若導體電路369向發光元件365輸出 電k號,則發光元件365將該電信號轉換光信號後,將該 光信號自發光部366出射。所出射之光信號透射上部包覆 層361,其光路LP藉由中空鏡結構體364之鏡面而被轉換成 大致垂直方向後朝光波導之芯部362入射。其後,所入射 之光彳s號於芯部362内進行傳輸,其光路lp藉由其他中空 鏡結構體364(未圖示)之鏡面被轉換成大致垂直方向後,透 射上部包覆層361而朝其他受光元件365之受光部366入 射。入射至受光元件365中之光信號被轉換成電信號後輸 入至其他導體電路369(未圖示)中。由此,光信號於兩個導 體電路之間進行高速傳輸。關於此種光元件安裝基板之詳 細It /兄例如可參照曰本專利特開2〇〇〇_199827號公報。 圖18(A)〜(〇表示光元件安裝基板37〇,該光元件安裝基 板370甲’光波導模組含有用以於發光元件及/或受光元件 138984.doc -59· 201009408 之電極與電路基板之電極之間提供導電之接收結構。藉由 設置此種接收結構,安裝精度較高,光之傳輸損耗降低, 進而光元件之受發光部與光波導之芯部之距離縮短,因此 光之傳輸效率提昇’且亦有助於光元件安裝基板之薄型 化。於圖18(A)所示之態樣中,光波導模組包含光波導與 發光元件及/或受光元件375,該光波導包含上部包覆層 371、芯部372、下部包覆層373及中空鏡結構體374,該發 光元件及/或受光元件375經由金屬突起部377而搭載於該 光波導上。於光波導中,形成有大小足夠收納金屬突起部 377之接收結構部(貫穿孔)。形成於電路基板上之導體電路 379經由收納於接收結構部中之金屬突起部377,而與發光 兀件及/或受光元件375電性連接。於圖18(A)所示之態樣 中,光波導模組與電路基板藉由導電性接著劑378而接 合。圖剛所示之態樣係於接收結構部中部分地設置用 於確保導體部之高度之導體接線柱彻方面,與圖I·所 示之態樣不同。進而’圖18(c)所示之態樣係於導體接線 柱380形成於整個接收結構部、且發光元件及/或受光元件 仍不含有金屬突起部方面’與圖18(八)所示之態樣不同。 關於圖18(A)〜(C)所示之光元件安裝基板37〇之基本動作, 與先前參照圖17所說明之光^件安裝基板遍之動作相 同。關於包含此種純結構部之光元件安裝基板 之詳細情 況’可參照本案申請人所申請之日本專利 149743(2祕年5月3〇日申請,發明之名稱「光元件安^ 基板、光電路基板及光元件安裝基板)。 138984.doc 201009408 實施例 以下,提供用以更具體地說明本發明之實施例。 實施例1 1 ·含有中空鏡結構體之芯層之製備 <己基降蓓烯(HxNB)/二苯基甲基降宿烯甲氧基矽烷 ' (diPhNB)系共聚物之合成> ’ 將 HxNB(CAS 編號第 22094-83-3 號)(9.63 g,0.054 莫 耳)、diPhNB(CAS編號第 376634-34-3號)(40.37 g,0.126莫 ® 耳)、1-己烯(4.54 g,0.054莫耳)及甲苯(150 g)加入乾燥箱 内之5 0 0 mL容量之血清瓶中加以混合,進而於油浴中一面 加熱至80°C—面進行攪拌後製成溶液。將Pdl446(1.04xl0_2 g, 7.2〇χ1 0·6莫耳)及N,N-二曱基苯銨四(五氟苯基)硼酸鹽 (DANFABA)(2·30χl0·2g,2.88χl(r5莫耳)分別以濃縮二氣 甲烷溶液(0.1 mL)之形態添加於該溶液中。將添加後之混 合物於磁攪拌器中於80°C下攪拌2小時。其後將反應混合 物(甲苯溶液)移至更大之燒杯中,若於其中滴加作為不良 溶劑之曱醇(1 L),則纖維狀之白色固形物沈澱。將固形物 過濾後進行收集,然後於60°C之烘箱内進行真空乾燥,從 = 而獲得乾燥質量為19.0 g(產率為38%)之生成物。利用凝膠 - 滲透層析法(GPC : THF溶劑,聚苯乙烯換算)對生成物之 分子量進行測定,結果質量平均分子量(Mw)=l 1 8,000、數 量平均分子量(Mn)=60,000。利用1H-NMR對生成物進行測 定,確定其為以下述結構式所表示之HxNB/diPhNB系共聚 物(x=0.32,y=0.68,n=5)。利用棱鏡搞合法對該共聚物之 138984.doc •61 · 201009408 折射率進行測定,結果於波長為633 nm中,TE模式 (Transverse Electric mode,橫電模式)下之折射率為 1.5695,而 TM模式(Transverse Magnetic mode,橫磁模式) 下之折射率為1.5681。In the above formula, R represents an alkyl group having a carbon number of 1 to 10, R2 represents a hydrogen atom, a methyl group or an ethyl group, "Ar represents an aryl group, X1 represents an oxygen atom or a methylene group, and X2 represents a carbon atom or a stone atom". a represents an integer of 〇~3, where c represents an integer of 1 to 3, and 138984.doc -51 - 201009408 p/q is 20 or less; among the descending (tetra) polymers represented by the above 23, particularly preferred is R is an alkyl group having 4 to 1 carbon atoms, ^ is an oxygen atom, & is a halogen atom, Ar is a phenyl group, and R2 is a methyl group, ..., and a compound such as butyl group (tetra) and diphenyl group Copolymer of (4) f-oxyl copolymer, hexyl ruthenium and i-phenylmethyl-reduced (tetra) methoxy calcined copolymer, fluorenyl group (tetra) and diphenylmethyl group-methoxyl group Or R; is an alkyl group having a carbon number of 4 to 10, which is a methylene group, & is a carbon atom, 'Ar is a phenyl group, R2 is a hydrogen atom, & is 〇, and a compound such as butyl (tetra) Copolymer of alkene with phenethyl group (tetra), copolymer of hexyl group (tetra) and phenethyl group (four), copolymer of fluorenyl group (tetra) and ethyl group (four); and, p/q or P/q+r As long as it is 2 inches or less, it is better 15 or less is more preferably about 0.1 to 10; whereby the effect of a plurality of repeating units containing a variety of decene can be sufficiently exerted. The above-described decene-based polymer has a refractive index lower than the above-described characteristics, and the cladding layer 210 is mainly composed of the above-mentioned noisecene-based polymer, whereby the light of the optical waveguide 24 can be further improved. Transmission performance. Further, in the case where the decene-based polymer contains a repeating unit of norbornene, the repeating unit of the norbornene contains a substituent containing a (meth)acryl fluorenyl group, and the (fluorenyl) acrylonitrile group may be mutually Crosslinking (polymerization) is relatively easy by heating, and the crosslinking reaction of the (meth)acrylic groups can be promoted by mixing the radical generating agent in the coating film material. As the radical generating agent, for example, 2,2-dimethoxy-1,2-diphenylethane-1-one, 丨'^bis (t-butylperoxy)_3,3 can be preferably used. , 5 • trimethylcyclohexane and the like. 138984.doc -52· 201009408 Further, when the (tetra) olefinic polymer comprises a repeating unit of (4), the repeating unit of the (tetra) olefin contains a repeating unit of a (tetra) olefin containing a substituent of an epoxy group, or contains In order to directly crosslink the polymerizable groups, the photoacid generator described above is mixed with the above-mentioned photoacid generator in the coating film material to cause epoxy or oxygenation by the action of the substance. The base of the base of the dream can be cross-linked. In order to crosslink the epoxy groups with each other, the (meth)acryloyl groups or the alkoxyalkyl groups, and at least one of the binders in the coating film material. The polymerizable group corresponding to each polymerizable group may be used. As the parent agent for the epoxy group having 3 epoxy groups, for example, 3 'glycidoxypropyltrimethoxy ketone (Y_Gps), polywei epoxy resin, or the like can be preferably used. As the crosslinking agent containing a (meth) acrylonitrile group, for example, fluorenyl methacryloxypropyltrimethyl decane tricyclo[52ι〇26] decane dimethyl diacetate can be preferably used. Vinegar, tripropylene glycol diacrylic acid vinegar, etc. As the crosslinking agent containing a siloxane group, for example, a decane coupling agent such as 3 glycidyloxypropyltrimethoxynonane or 3-aminopropyltrimethoxydecane can be preferably used. Further, various additives may be added (mixed) to the coating film material 2 crucible. For example, the monomer and the primary catalyst listed in the above-mentioned core film material 100 may be mixed in the coating film material 2?. Thereby, the monomer can be reacted in the coating layer 210, so that the refractive index of the coating layer 21 is changed. In particular, if a monomer containing a crosslinkable monomer is used as the monomer, at least a part of the pendant olefin polymer can be carried out via the crosslinkable monomer in the coating layer 21 138. Doc • 53- 201009408 Cross-linking. Further, the norbornene-based polymer may be crosslinked with the polymer used for the core layer 11 by the type of the crosslinking agent, the type of the polymer used for the core layer i, and the like. As other additives, the antioxidants mentioned above are mentioned. By mixing the antioxidant, deterioration of the coating film material 200 (northene-based polymer) due to oxidation can be prevented. The second photoacid generator included in the cladding film material 200 can be used for the absorption maximum wavelength (second absorption maximum wavelength) used in ultraviolet light and the first absorption maximum wavelength of the ith photoacid generator. . It is preferable that the second absorption wavelength is longer than the first absorption maximum wavelength, and particularly preferably the second absorption maximum wavelength is less than 300 nm' and the second absorption maximum wavelength is 300 ηηι or more. Examples of such a second photoacid generator include, in addition to tetrakis(pentafluorophenyl)borate or hexafluoroantimonate, tetrakis(pentafluorophenyl)gallate, aluminate, and citrate. Classes, other borate salts, gallates, carboranes, halogenated carboranes, and the like. As a commercial item of such a second photo-acid generator, for example, "TAG_ 3 82" which can be obtained from Tokyo Toyo Ink Manufacturing Co., Ltd., and can be obtained from Midori Kagaku Industrial Co., Ltd., Tokyo, Japan. "NAI-105 (CAS No. 85432-62-7)" and so on. When TAG-3 82 is used as the second photoacid generator, a high pressure mercury lamp or a metal toothed lamp can be preferably used as the second ultraviolet light irradiation means. Thereby, the coating film material 200 can be supplied with ultraviolet light of a sufficient energy of 300 nm or more, whereby the TAG-382 can be efficiently decomposed to generate the above-mentioned acid. 138984.doc -54- 201009408 When the cladding film material 200 is formed, a varnish for a coating layer containing the above polymer, a second photoacid generator, and other desired additives is prepared. The solvent used for the preparation of the varnish for a coating layer is the same as the solvent used in the preparation of the varnish for the above-mentioned anger layer. Further, if necessary, a sensitizer having the following functions may be added to the 'monthly paint', that is, the sensitivity of the second light 1 generating agent to the second ultraviolet light is increased, and the activation (reaction or decomposition) is reduced. 2) The required 0 temple or 6 amount ' or the wavelength of the 2nd ultraviolet light is converted to a wavelength suitable for its activation. The sensitizer is the same as the sensitizer added to the above-mentioned core varnish. Further, if necessary, an antioxidant for preventing the generation of undesired radicals or the natural oxidation of the polymer may be added to the varnish for the coating layer. As such an antioxidant, the same as the antioxidant added to the above-mentioned varnish for core layer can be mentioned. The varnish for the coating layer can be prepared by the following coating method = the desired film thickness, so that the viscosity of the coating varnish (normal temperature) is preferably about 1 G0 to 10 GG0 eP, and more The good thing is to reach 15. ~5 faces left and right, and further preferably, the amount of solvent is appropriately adjusted by means of a mode of about 200 to 35 〇〇 cP. The coating film material 200 is formed by applying the coating layer to the support substrate with a varnish. As the support substrate, for example, a stone substrate, a two-t-cut substrate, a glass substrate, a quartz substrate, a polyethylene terephthalate (PET) film, or the like can be used. Examples of the coating method include, but are not limited to, a knife method, a spin coating method, a dipping method, a table coating method, a spray coating method, an applicator coating method, a curtain coating method, and a die method. The thickness of the coating film is not particularly limited, and the thickness thereof is about 5 to 200 μηι in a state before drying, and 138984.doc 55-201009408 is preferably ίο~just_about, more preferably 15 to 65. Call it left and right. Then, the coating film material 200 can be obtained by removing the solvent (desolvation) in the coating film, i.e., drying. The method of removing the solvent (drying) may, for example, be a method of heating, placing under atmospheric pressure or reduced pressure, or spraying (injecting) an inert gas or the like. It is preferred to use, for example, a heating method using a hot plate. Thereby, the solvent can be removed relatively easily and in a short time. In the case of heating, the heating temperature is preferably 25 to 6 (about rc, more preferably about 3 to 45 tons. Also, the heating time is preferably 15 to 6 minutes or so, preferably 15 to 15). 30 minutes or so. _ The obtained coating layer (4) is peeled off from the support substrate, and then brought into contact with one or both sides of the core layer 110 to be thermally connected to each other. For thermocompression bonding, 5 is convenient. For example, a laminating machine can be used. When the post-irradiation method is used, the coating film material 2 which is subjected to thermocompression bonding is in a state in which the Tg of the external light is low, and thus it is possible to The thermocompression bonding step is not performed at a low temperature and a low pressure which are damaged by the hollow mirror structure provided in the core portion. The temperature of the thermocompression bonding is usually set to 80 to 13 (rc, preferably 100 to 120 ° C). The pressure of the thermocompression bonding is usually set to be in the range of 0.1 to 10 MPa, preferably 0.1 to 4 MPa. Further, when the thermocompression bonding is performed, the pressure is not obtained. The acid is released from the second photoacid generator contained in the coating film material 2〇〇. In the pressure bonding step, a vacuum atmosphere or vacuum is used as needed to minimize the gas components such as air remaining in the coating film material 2〇〇 and the core layer u〇< Therefore, in order to suppress the generation of voids in the contact portion and obtain the laminate body 230 having good flatness, 138984.doc • 56- 201009408: good * in this case, the inside of the hollow mirror structure is also reduced in air or true. Second, as long as the collapse of the coating layer does not occur, that is, as long as the hollow mirror structure is not deformed, there is no problem. The reduced pressure environment or vacuum can be applied to the coating layer, the material 200 and the core layer, Or when the cladding film material is thermocompression bonded to the core, or both, the application of the reduced pressure environment or vacuum can be achieved by vacuum lamination, vacuum pressing, etc. Then, for example, wavelength cut filter is used. The light sheet 220 irradiates the entire surface of the laminated body 230 with the second ultraviolet light including the second absorption maximum wavelength and not including the wavelength of the first absorption maximum wavelength, thereby converting the cladding film material 2〇〇 into a package. Coating 210, while lifting the core layer i 1〇 The adhesion to the cladding layer 21 is, for example, when the first absorption maximum wavelength is less than 3 〇〇 nm and the second absorption maximum wavelength is 300 nm or more, the entire surface of the laminated body 23 can be irradiated. The second ultraviolet light having a wavelength of 300 nm or more. The acid is released from the second photo-acid generator contained in the coating film material 200 by the total irradiation of the second ultraviolet light. On the other hand, the core layer 11 The i-th photoacid generator contained in the crucible is substantially incapable of inducing the second ultraviolet light, so there is no case where the refractive index of the core portion 1〇 changes or decreases (over the cladding portion). The acid released from the photoacid generator catalyzes the crosslinking reaction of the polymerizable group of the constituent polymer of the coating film material 2〇〇. For example, when the constituent polymer contains an epoxy group, 'the cationic polymerization of the epoxy group is started by the acid released from the second photoacid generator' and is inside the cladding film material 2〇0. The crosslinked structure is formed such that the strength of the cladding layer 21 is improved. Further, in the case where the constituent polymer of the adjacent core layer 110 contains a polymerizable group (for example, an epoxy group) which can participate in the crosslinking reaction, the above cationic polymerization also affects 138984.doc -57-201009408 to the core The layer 110 is formed with a crosslinked structure between the cladding layer 210 and the core layer i 1 , so that the adhesion between the layers is improved. The amount of irradiation of the external light is preferably from about 10 to about 1000 J/cm2, more preferably from about 10 to about 500 J/cm2, and even more preferably from about 1 to about 3 Å/cm2. Thereby, the second photoacid generator can be reliably activated. Thereafter, the laminate 23 is subjected to heat treatment as needed to complete the crosslinking reaction of the cladding layer 210. This heat treatment can simultaneously process a plurality of laminates 23 by batch processing (oven heating) without pressurization, so that the productivity of the optical waveguide 240 is improved. The heating temperature is not particularly limited, but is preferably about 100 to 180 C, more preferably about 12 to 15 C. Further, the heating time is set to be sufficient to stop the crosslinking (hardening) reaction, and is not particularly limited, and is preferably about 30 to 120 minutes, more preferably about 45 to 9 minutes. 16 shows an optical waveguide module 350 including the optical waveguide and the light-emitting element and/or the light-receiving element. As shown in FIG. 16, the optical waveguide module 35 of the present invention includes an optical waveguide and a light-emitting element and/or a light-receiving element 355. The optical waveguide includes an upper cladding layer 35 1 , a core portion 352 , a lower cladding layer 353 , and a hollow mirror structure 354 ′. The light-emitting element and/or the light-receiving element 355 are mounted on the optical waveguide by a support member 357 . . By the mirror surface of the hollow mirror structure of the present invention, the light-emitting portion 3 56 of the self-luminous element 355 is transmitted through the upper cladding layer 351 to enter the light of the core portion 352 of the optical waveguide, or the upper portion of the optical waveguide 352 is transmitted from the upper portion of the optical waveguide. The optical path LP of the light emitted from the light receiving portion 356 of the light receiving element 35 to the cladding layer 351 is converted into a substantially vertical direction. For the light-emitting element and/or the light-receiving element in the optical waveguide module, reference is made to Japanese Laid-Open Patent Publication No. 2005-321560, Japanese Patent Laid-Open No. 2004-193610, and Japanese Patent Laid-Open No. 138984. 201009408 No. 9-148621. Fig. 17 shows an optical element mounting substrate 360 including the above optical waveguide module and circuit board. As shown in Fig. 17, the optical element mounting substrate 36 of the present invention includes an optical waveguide module A and a circuit board B. As shown in FIG. 17, the optical waveguide module a includes an optical waveguide and a light-emitting element and/or a light-receiving element 365. The optical waveguide includes an upper cladding layer 361, a core portion 362, a lower cladding layer 363, and a hollow mirror structure 364. The light-emitting element and/or the light-receiving element 365 are mounted on the optical waveguide via the metal protrusion 367 and the electrode pad 368. The conductor circuit 369 formed on the circuit board b is electrically connected to the light-emitting element and/or the light-receiving element 365 via a metal protrusion 367 and an electrode pad 368 (not shown). As an operation of mounting the substrate 360 as the optical element, for example, when the conductor circuit 369 outputs a k number to the light-emitting element 365, the light-emitting element 365 converts the electric signal into an optical signal, and then emits the optical signal from the light-emitting portion 366. The emitted light signal is transmitted through the upper cladding layer 361, and the optical path LP is converted into a substantially vertical direction by the mirror surface of the hollow mirror structure 364 and then incident on the core portion 362 of the optical waveguide. Thereafter, the incident pupil s is transmitted in the core portion 362, and the optical path lp is transmitted through the mirror surface of the other hollow mirror structure 364 (not shown) into a substantially vertical direction, and then transmitted through the upper cladding layer 361. The light is incident on the light receiving portion 366 of the other light receiving element 365. The optical signal incident on the light receiving element 365 is converted into an electrical signal and then input to another conductor circuit 369 (not shown). Thereby, the optical signal is transmitted at high speed between the two conductor circuits. For details of such an optical element mounting substrate, for example, it is possible to refer to Japanese Laid-Open Patent Publication No. Hei. No. Hei. 18(A) to (〇 denotes an optical element mounting substrate 37A, the optical element mounting substrate 370A's optical waveguide module includes electrodes and circuits for the light-emitting element and/or the light-receiving element 138984.doc-59·201009408 A conductive receiving structure is provided between the electrodes of the substrate. By providing such a receiving structure, the mounting precision is high, the transmission loss of light is reduced, and the distance between the light-emitting portion of the optical element and the core of the optical waveguide is shortened, so that the light is The transmission efficiency is improved, and the thinning of the optical element mounting substrate is also facilitated. In the aspect shown in FIG. 18(A), the optical waveguide module includes an optical waveguide and a light-emitting element and/or a light-receiving element 375, the optical waveguide The upper cladding layer 371, the core portion 372, the lower cladding layer 373, and the hollow mirror structure 374 are included, and the light-emitting element and/or the light-receiving element 375 are mounted on the optical waveguide via the metal protrusions 377. In the optical waveguide, A receiving structure portion (through hole) having a size sufficient to accommodate the metal protrusion portion 377 is formed. The conductor circuit 379 formed on the circuit board is connected to the light emitting element and/or the light emitting element via the metal protrusion portion 377 received in the receiving structure portion. The optical element 375 is electrically connected. In the aspect shown in Fig. 18(A), the optical waveguide module and the circuit board are joined by a conductive adhesive 378. The aspect shown in the figure is in the receiving structure portion. The conductor terminal portion for partially ensuring the height of the conductor portion is different from that shown in Fig. I. Further, the pattern shown in Fig. 18(c) is formed by the conductor terminal 380 formed throughout the reception. The structure and the fact that the light-emitting element and/or the light-receiving element do not contain the metal protrusion are different from those shown in Fig. 18 (A). The optical element mounting substrate 37 shown in Figs. 18(A) to (C) The basic operation of the cymbal is the same as the operation of the optical component mounting substrate described above with reference to Fig. 17. For details of the optical component mounting substrate including such a pure structural portion, reference can be made to Japanese Patent No. 149743 filed by the applicant of the present application. (2) The name of the invention, "optical element mounting board, optical circuit board, and optical element mounting board", was filed on May 3rd of the following year. 138984.doc 201009408 Embodiments Hereinafter, the implementation of the present invention will be described more specifically. Example 1. Example 1 · Contains hollow Preparation of core layer of structure <Synthesis of hexyl decanoene (HxNB)/diphenylmethylnorsyl methoxy decane' (diPhNB) copolymer> 'HxNB (CAS No. 22094-83) -3) (9.63 g, 0.054 mol), diPhNB (CAS No. 376634-34-3) (40.37 g, 0.126 Mo), 1-hexene (4.54 g, 0.054 mol) and toluene ( 150 g) was added to a 500 mL syringe bottle in a dry box and mixed, and further heated to 80 ° C in an oil bath to stir to prepare a solution. Pdl446 (1.04xl0_2 g, 7.2〇χ1 0·6 mol) and N,N-dimercaptobenzidine tetrakis(pentafluorophenyl)borate (DANFABA) (2·30χl0·2g, 2.88χl (r5 Mo The ear was added to the solution in the form of a concentrated di-methane solution (0.1 mL). The added mixture was stirred in a magnetic stirrer at 80 ° C for 2 hours, after which the reaction mixture (toluene solution) was shifted. In a larger beaker, if sterol (1 L) is added as a poor solvent, the fibrous white solid precipitates. The solid is filtered and collected, and then vacuumed in an oven at 60 ° C. After drying, a product having a dry mass of 19.0 g (yield: 38%) was obtained from the product, and the molecular weight of the product was measured by gel permeation chromatography (GPC: THF solvent, polystyrene conversion). Mass average molecular weight (Mw) = 1 8,000, and number average molecular weight (Mn) = 60,000. The product was measured by 1H-NMR and determined to be HxNB/diPhNB copolymer represented by the following structural formula (x = 0.32). , y = 0.68, n = 5). Using the prism to legalize the copolymer 138984.doc • 61 · 2 01009408 The refractive index was measured. The refractive index was 1.5695 in the TE mode (Transverse Electric mode) and the refractive index in the TM mode (Transverse Magnetic mode) was 1.5681. .
<芯層用清漆之製備> 於黃光(yellow light)下,將上述HxNB/diPhNB系共聚物 溶解於均三曱苯中製備10 wt%之共聚物溶液(30 g)。另 外,與此不同,於100 mL容量之玻璃瓶中加入HxNB (42.03 g,0.24莫耳)及雙降葙烯曱氧基二甲基矽烷(SiX, CAS編號第376609-87-9號)(7.97 g,0.026莫耳),進而加入 兩種抗氧化劑[Ciba公司製造之Irganox 1076(0.5 g)及 Irgafos 168(0.125 g)]而獲得單體抗氧化劑溶液。於上述之 共聚物溶液30.0 g中加入上述之單體抗氧化劑溶液3.0 g、 Pd(PCy3)2(OAc)2(Pd785)(4.95xl〇-4 g,6.29xl0·7莫耳,二 氣甲烷0.1 mL)、及吸收極大波長為220 nm之第1光酸產生 劑[RHODORSIL(註冊商標)PHOTOINITIATOR 2074(CAS編 號第 178233-72-2號)(2.55xl0·3 g,2.5 1χ 1(Γ6莫耳,二氯曱 烷0.1 mL中),均勻地溶解後,使用0.2 μπι之細孔徑之過濾 138984.doc •62- 201009408 器進行過濾而製備芯層用清漆。 <芯層(單層光波導要素膜)之製作> 將怒層用清漆10 g注射於厚度為250 μπΐ2聚對苯二甲酸 乙二酯(PET)膜上,使用刮刀將該芯層用清漆擴展成大致 固定之厚度而形成芯層用清漆之塗膜(乾燥前之厚度為7〇 μπι)。將該塗膜與PET膜一併配置於加熱板上’於5(rc下 加熱45分鐘’藉此使甲苯蒸發而獲得厚度為5〇 μιη之乾燥 塗膜。使用兩壓水銀燈或金屬鹵化物燈,並透過含有與包 覆部相對應之特定之開口圖案之光罩,而對該乾燥塗膜照 射波長未滿300 nm或365 nm以下之第1紫外光(照射量為 500 mJ/cm2)。將照射後之塗膜放入烘箱中,實施如下之加 熱處理,即最初於50°C下加熱30分鐘,然後於85〇c下加熱 30分鐘’其後於150°C下加熱60分鐘。可於最初之在5〇。〇 下加熱10为鐘之時點,以目視確認塗膜内之波導圖案。加 熱處理後,將塗膜自PET膜上剝離而形成芯層(單層光波導 要素膜)。 <準分子雷射之調整> 於在上述芯層中形成如圖3所示之中空鏡結構體之前, 以如下方式對準分子雷射裝置(ATL LaserTechnik公司製 造,ATLEX-3 00SI)進行調整《以使設置於準分子雷射裝 置中之腔室内之壓力暫時達到1〇毫巴以下之方式進行排氣 後’於上述腔室内填充ArF預混氣體(Ar : 4.13%,f2 : 0.17%,氖氣:剩餘部分)至65〇〇毫巴為止。於上述準分子 雷射裝置中,以如下方式調整雷射光,即經由透鏡將雷射 138984.doc -63 - 201009408 光聚光後,藉由使其透過經加工而形成有1000x1000 μπι之 方孔(square hole)之不鏽鋼光罩而進一步縮小投影,最終 使照射區域實質上變成100x100 μπι。以頻率100 Hz使準分 子雷射振盪,並使用功率計(OPHIR Japan股份有限公司製 造,PE50-DIF-U)對(透過上述光罩)最終到達加工面之雷射 光之輸出進行測定,結果為3 · 5 mW。 <鏡加工> 將上述芯層(單層光波導要素膜)(厚度為50 μιη,芯層寬 度為50 μηι)之與鏡加工面相反側之面貼附於具有黏著性之 基板(Magic-resin : Toyo Corporation股份有限公司製造) 上。將該基板配置於準分子雷射裝置之微動台上,抽吸基 板之固定面而加以固定。繼而,以使三層波導之芯部之長 度方向與微動台之可動方向一致之方式旋轉微動台而進行 對準調整後,以使雷射照射區域(100x100 μηι)之中心到達 芯部之中心之方式進行調整。繼而,一面使作為輔助氣體 之He氣體以2.0 L/min流向过部之鏡加工部位,一面使微動 台以1 6 μπι/sec於光路方向上移動150 μιη,其間照射頻率為 100 Hz之雷射。照射後,沿芯部對芯層進行切割,觀察其 剖面,結果相對於芯層所劃定之平面形成45度之傾斜。 又,使用掃描型電子顯微鏡(SEM,Scanning Electron Microscope)對該傾斜面(鏡面)進行觀察,結果幾乎未發現 堆積於鏡面上之膠潰(smear)(已碳化之雷射剝钱(laser ablation)物),鏡面非常平滑。 2.包覆層膜材料之製備 138984.doc -64- 201009408 〈癸基降宿烯(DeNB)/曱基縮水甘油醚降葙烯(AGENB)系共 聚物之合成> 將 DeNB(CAS 編號第 22094-85-5 號)(16.4 g,0.07 莫耳)、 AGENB(CAS編號第 3188-75-8號)(5.41 g,0.03 莫耳)及甲苯 (58.0 g)加入乾燥箱内之500 mL容量之血清瓶中加以混 ' 合,進而於油浴中一面加熱至80°C —面進行攪拌後製成溶 * 液。於該溶液中添加(η6-甲苯)Ni(C6F5)2(0.69 g,0.0014莫 耳)之曱苯溶液(5 g)。將添加後之混合物於磁攪拌器中且 _ 於室溫下攪拌4小時。於該混合物加入曱苯(87.0 g)後猛烈 攪拌。其後將反應混合物(曱苯溶液)移至更大之燒杯中, 若於其中滴加作為不良溶劑之甲醇(1 L),則纖維狀之白色 固形物沈澱。將固形物過濾後進行收集,然後於60°C之烘 箱内進行真空乾燥,從而獲得乾燥質量為17.00 g(產率為 87%)之生成物。利用GPC(THF溶劑,聚苯乙烯換算)對生 成物之分子量進行測定,結果Mw=75,000、Mn=30,000。 利用1H-NMR對生成物進行測定,確定其為以下述結構式 ❹ 所表示之 DeNB/AGENB 系共聚物(x=0.77,y=0.23, n=10)。利用稜鏡耦合法對該共聚物之折射率進行測定, • 結果於波長為633 nm中,TE模式下之折射率為1.5153,而 - TM模式下之折射率為1.5151。<Preparation of varnish for core layer> A 10 wt% copolymer solution (30 g) was prepared by dissolving the above HxNB/diPhNB copolymer in trisylbenzene under yellow light. In addition, unlike the glass bottle of 100 mL capacity, HxNB (42.03 g, 0.24 mol) and bisnorthene nonyloxy dimethyl decane (SiX, CAS No. 376609-87-9) were added. 7.97 g, 0.026 mol), and further adding two antioxidants [Irganox 1076 (0.5 g) and Irgafos 168 (0.125 g) manufactured by Ciba Corporation) to obtain a monomer antioxidant solution. To the above copolymer solution 30.0 g, the above monomer antioxidant solution 3.0 g, Pd(PCy3) 2 (OAc) 2 (Pd785) (4.95 x l 〇 -4 g, 6.29 x 10 7 mol, di-methane methane) was added. 0.1 mL), and the first photoacid generator that absorbs a maximum wavelength of 220 nm [RHODORSIL (registered trademark) PHOTOINITIATOR 2074 (CAS No. 178233-72-2) (2.55xl0·3 g, 2.5 1χ 1 (Γ6莫) The ear, methylene chloride (0.1 mL), was uniformly dissolved, and then filtered using a 0.2 μm pore size filter 138984.doc • 62-201009408 to prepare a core varnish. <core layer (single layer optical waveguide) Production of element film] The anger layer was sprayed with 10 g of varnish onto a film of 250 μπΐ2 polyethylene terephthalate (PET), and the core layer was expanded with a varnish to a substantially fixed thickness. The coating film of the varnish for the core layer (the thickness before drying is 7 〇μπι). The coating film and the PET film are placed together on a hot plate 'heated at 5 rc for 45 minutes' to thereby evaporate the toluene to obtain a thickness. It is a dry coating film of 5 〇μιη. It uses a two-pressure mercury lamp or a metal halide lamp, and passes through the containing portion and the cladding portion. Corresponding to the mask of the specific opening pattern, the dried coating film is irradiated with the first ultraviolet light having a wavelength of less than 300 nm or less than 365 nm (the irradiation amount is 500 mJ/cm 2 ). The coated film after the irradiation is placed in an oven. The heat treatment is carried out by initially heating at 50 ° C for 30 minutes and then heating at 85 ° C for 30 minutes and then heating at 150 ° C for 60 minutes. It can be initially at 5 Torr. When the heating was 10 hours, the waveguide pattern in the coating film was visually confirmed. After the heat treatment, the coating film was peeled off from the PET film to form a core layer (single-layer optical waveguide element film). <Adjustment of excimer laser > Before the formation of the hollow mirror structure shown in Fig. 3 in the above-mentioned core layer, the molecular laser device (ATLX-3 00SI, manufactured by ATL LaserTechnik Co., Ltd.) was aligned in the following manner to make it set to the excimer After the pressure in the chamber in the laser device is temporarily less than 1 mbar, the chamber is filled with ArF premixed gas (Ar: 4.13%, f2: 0.17%, helium: the remainder) to 65 〇〇 mbar. In the above excimer laser device The laser light is adjusted by concentrating the laser light 138984.doc -63 - 201009408 through a lens, and then passing it through a stainless steel mask that is processed to form a square hole of 1000 x 1000 μπι. The projection is reduced, eventually making the illuminated area substantially 100x100 μπι. The excimer laser was oscillated at a frequency of 100 Hz, and the output of the laser light that finally reached the processing surface (through the reticle) was measured using a power meter (PE50-DIF-U, manufactured by OPHIR Japan Co., Ltd.), and the result was 3 · 5 mW. <Mirror processing> The surface of the core layer (single-layer optical waveguide element film) (thickness 50 μm, core layer width 50 μηι) on the opposite side to the mirror-finished surface is attached to an adhesive substrate (Magic) -resin : manufactured by Toyo Corporation, Inc.). The substrate is placed on a fine movement stage of the excimer laser device, and the fixed surface of the substrate is sucked and fixed. Then, the micro-motion stage is rotated so that the longitudinal direction of the core of the three-layer waveguide coincides with the movable direction of the micro-motion stage, and the alignment is adjusted so that the center of the laser irradiation area (100×100 μηι) reaches the center of the core. The way to adjust. Then, while the He gas as the assist gas flows to the mirror processing portion at 2.0 L/min, the micro-motion stage is moved by 150 μm in the optical path direction at 16 μm/sec, and the laser light having a frequency of 100 Hz is irradiated thereto. . After the irradiation, the core layer was cut along the core, and the cross section was observed, and as a result, a 45-degree inclination was formed with respect to the plane defined by the core layer. Further, the inclined surface (mirror surface) was observed using a scanning electron microscope (SEM, Scanning Electron Microscope), and as a result, almost no smear accumulated on the mirror surface (laser ablation) Object), the mirror is very smooth. 2. Preparation of coating film material 138984.doc -64- 201009408 <Synthesis of decyl-norbornene (DeNB)/mercapto-glycidyl ether decene (AGENB) copolymer> DeNB (CAS No. No. 22094-85-5) (16.4 g, 0.07 mol), AGENB (CAS No. 3188-75-8) (5.41 g, 0.03 mol) and toluene (58.0 g) were added to the 500 mL capacity in the dry box. The serum bottles were mixed and further heated to 80 ° C in an oil bath to be stirred to prepare a solution. To the solution was added (?6-toluene)Ni(C6F5)2 (0.69 g, 0.0014 mol) in a solution of benzene (5 g). The added mixture was stirred in a magnetic stirrer and stirred at room temperature for 4 hours. To the mixture was added toluene (87.0 g) and stirred vigorously. Thereafter, the reaction mixture (the benzene solution) was transferred to a larger beaker, and if methanol (1 L) as a poor solvent was added dropwise thereto, a fibrous white solid precipitated. The solid matter was collected by filtration, and then vacuum-dried in an oven at 60 ° C to obtain a product having a dry mass of 17.00 g (yield: 87%). The molecular weight of the product was measured by GPC (THF solvent, polystyrene conversion), and as a result, Mw = 75,000 and Mn = 30,000. The product was measured by 1H-NMR and determined to be a DeNB/AGENB copolymer represented by the following structural formula (x = 0.77, y = 0.23, n = 10). The refractive index of the copolymer was measured by a ruthenium coupling method. • The result was a refractive index of 1.5153 in the TE mode at a wavelength of 633 nm, and a refractive index of 1.5151 in the -TM mode.
138984.doc -65- 201009408 <包覆層用清漆之製備> 於黃光下,將上述共聚物1〇 g溶解於脫水甲笨中製備2〇138984.doc -65- 201009408 <Preparation of varnish for coating layer> Under the yellow light, the above copolymer 1 〇 g was dissolved in dehydrated sputum to prepare 2 〇
Wt〇/。之共聚物溶液(50 g)。於該溶液中加入兩種抗氧化劑 [Ciba 公司製造之 Irganox 1076(0.01 gmrgaf〇s ι68(〇〇〇25 g)]與吸收極大波長為335 nm之第2光酸產生劑(東洋油墨製 造公司製造之TAG-382, 0.2 g),均勻地溶解後,使用〇2 μπι之細孔徑之過濾器進行過濾而製備包覆層用清漆。 <包覆層膜材料之製作> 將包覆層用清漆10 g注射於配置於水平台之上之厚度為 100 μηι之PET膜上,使用刮刀將該包覆層用清漆擴展成大 致固定之厚度而形成包覆層用清漆之塗膜(乾燥前之厚度 為30 μιη)。將該塗膜與PET膜一併放入乾燥機中,於5(rc 下加熱1 5分鐘,藉此使甲苯蒸發而獲得厚度為2〇 μιη之乾 燥塗膜。其後,將乾燥塗膜自PET膜上剝離而形成包覆層 膜材料。 3.三層光波導之一次性製造 於含有中空鏡結構體之上述芯層(大小為20x20 cm)之各 個面上各積層一片上述包覆層膜材料(大小為25x25 cm)。 將該三層積層體投入至設定為12〇°C之貼合機中,於0.2 MPa之壓力下熱壓接5分鐘。其後使三層積層體恢復至室 溫、常壓,於該三層積層體與高壓水銀燈之間配置厚度 100 μιη之PET膜來作為阻斷300 nm以下之波長的波長戴止 濾光片。繼而,自高壓水銀燈透過波長截止濾光片照射第 2紫外光(照射量為100 mj/cm2)。將照射後之三層積層體未 138984.doc 66- 201009408 經放置而直接(放置時間為〇分鐘)放入至乾燥機中,於 150C下加熱30分鐘,藉此完成包覆層膜材料之硬化 層化)及芯層/包覆層間之密著力強化 入平始胃# /、1文將雙面膠插 ^ 厚度為45 之銅層(導體層)與三層積層體之間 藉由滾筒層壓而使兩者接合,然後進行下述之評估。 4.評估 ° <傳輸損耗> 關於所獲得之三層光波導之傳輸損耗,藉由如下之回截 法進行測定,該回截法係指使自雷射二極體所產生之光透 過光纖後自芯部之-端輸人,並對來自另—端之輸出進行 測定,然後將芯部之長度切成數個等級之長度,對各長度 測定光輸出。各長度之芯部之總光損耗以下述式表示。 總光損耗(dB)=-l〇i Og(pn/p〇) 上式中,Pn係於Pi、P2、…pn之各長度之芯部之他端所 測定之輸出,PO係將光纖與芯部之一端耦合前之光纖之端 部的光源之測定輸出。 其次’將總光損耗如圖19般緣圖。該資料之回歸線 (regression line)由下述式表示。 y=mx+b 上式中,m表示光傳輪損耗,b表示耦合損耗(coupling loss)。實施例1之光波導之傳輸損耗為0.06 dB/cm。 <鏡損耗> 關於所獲得之三層光波導之鏡部之損耗,對使自雷射二 極體或面發光型雷射(VCSEL)所產生之光透過光纖後自芯 138984.doc -67- 201009408 部之一端輸入,並測定於鏡傾斜部反射後穿透包覆層之光 之輸出,求得以下述式所表示之總光損耗。 總光損耗(dB)=-101 〇g(Pl/P〇) 上式中,P1係於傾斜部上部所測定之輸出,p〇係將光纖 與芯部之一端耦合之前之光纖之端部的光源之測定輸出。 自所獲得之總光損耗減去直線部分之損耗及光纖與芯部之 耦合部之損耗’從而計算出鏡部之損耗。實施例1之光波 導之鏡部之損耗為0.5 dB/cm。 <鏡部之平滑性> 關於所獲得之三層光波導之鏡部之平滑性,使用雷射掃 也共軏焦顯微鏡(奥林巴斯(〇lympus)公司製造之Lxet OLS-3 100),將三層光波導之鏡面設置成大致水平而直接 測定出鏡表面之突起物之最大高冑。實施之光波導之 鏡部之平滑性未滿100 nm。 <拉伸強度> 田將所獲得之二層光波導切成JIS K7127所指定之試片 之形狀時,於相當於試片之中央之最狹小之平行部配置有 鏡Ρ將°亥°式片之兩端部夾持於拉伸試驗機(A&D股份有 ,公司製造之拉伸試驗機tensil〇n stm_T-5〇)之夾盤 部’然後-面將十字頭速度保持於5 em/min—面使試驗機 動對試片破裂時之強度進行測定。實施例^之光波導 之拉伸強度為5〇〇 gf/cm以上。 <膠渣產生量> 备形成二層光波導之鏡部(中空鏡結構體)時,以目視觀 138984.doc 201009408 察藉由準分子雷射剝蝕後附著於鏡部之微細之碳化粉塵 (膠渣)之產生量(附著面積)。於實施例1之光波導中,幾乎 未觀察到膠渣。 比較例1 除了未於芯層(單層光波導要素膜)上實施鏡加工以外, 以與實施例1相同之方式一次性製造三層光波導。繼而, 使用以與實施例1相同之方式調整之準分子雷射,以如下 之方式對該三層光波導實施鏡加工。 將上述三層光波導之一側之基材膜(PES)剝離,然後將 與該鏡加工面相反側之面貼附於具有黏著性之基板 (Magic-resin: Toyo Corporation股份有限公司製造)上。將 該基板配置於準分子雷射裝置之微動台上,抽吸基板之固 定面加以固定。繼而,以使三層波導之芯部之長度方向與 微動台之可動方向一致之方式旋轉微動台而進行對準調整 後,以使雷射照射區域(1 〇〇χ 1 〇〇 μιη)之中心到達芯部之中 心之方式進行調整。繼而,一面使作為輔助氣體之He氣體 以2.0 L/min流向芯部之鏡加工部位,一面使微動台以16 μιη/sec於光路方向上移動15〇 μιη,其間照射頻率為1〇〇 Hz 之雷射。照射後,沿芯部對三層光波導進行切割,觀察其 剖面’結果自下部包覆層起遍及芯層,相對於三層光波導 所劃定之平面形成45度之傾斜。又,使用掃描型電子顯微 鏡(SEM)對該傾斜面(鏡面)進行觀察,結果堆積於鏡面上 之膠渣(已碳化之雷射剝蝕物)之附著面積較實施例i更寬 廣,但鏡面平滑。 138984.doc -69· 201009408 以與實施例i相同之方式,對傳輪損耗、鏡損耗、鏡部 :平滑性、拉伸強度及膠逢產生量進行測定。將該等之測 定結果與上述實施例丨之測定結果一併匯總於表i。 表1 傳輸損耗 dB/cm <0.1 dB <1.0 —_____ <100 實施例1 拉伸強度 g^cm >500 膠渣產生量 --—-- 敕少 比較例1 -------- <0.1 ---- 1 <1.0 —s〇〇___ <50 丁人 由表1可知,關於鏡之性能(傳輸損耗、鏡損耗、平滑 性),實施例1與比較例丨之間並無明顯之差異。另—方 面關於代表光波導之機械強度之拉伸強度,實施例五顯 不比較例1之10倍以上之值。又,關於膠渣產生量,比較 例1較實施例1更多。其原因在於,與只要剝蝕芯層即可之 實施例i相比,於比較例i中不僅芯1,亦必需剝餘包覆 層。由於每個膠逢粒子之大小為100 nm以下,因此該膠逢 粒:自身不會對平滑性造成較大之影響,但㈣逢產生量 增多,則存在膠渣粒子彼此凝聚而損傷鏡面,結果使鏡損 :惡化之虞。另外,當,然,由於實施例】之鏡面被包覆: 德閉,因此與暴露於周圍環境中之比較食"之鏡面相比 不易因來自外部之塵埃或灰塵之附著而受到污損。進而, 作為鏡加卫時之優點,☆比較例i中為了對上部包覆 以固定之楔形角進行剝蝕而需要比較大之光罩(芯層寬: 倍以上),相對於此’於實施例艸只要剝Μ層: 可,因此可使用比較小之光罩(芯層寬度之15倍以上)。 138984.doc 201009408 實施例2 除以如下之方式對 <芯層(單層光波導要素膜)之製作〉及 <鏡加工 >進行變更以外,以與實施例丨相同之方式製造包 含防干擾包覆結構之交叉型波導形之三層光波導。 <包含防干擾包覆結構之交又型波導芯層之製作> 將芯層用清漆10 g注射於厚度為25〇 μπΐ2聚對苯二甲酸 乙二酯(PET)膜上,使用到刀將該芯層用清漆擴展成大致 固定之厚度來形成芯層用清漆之塗膜(乾燥前之厚度為7〇 μπ〇。將該塗膜與PET膜一同配置於加熱板上,於5(^下 加熱45分鐘,藉此使甲苯蒸發而獲得厚度為5〇 之乾燥 塗膜。使用尚壓水銀燈或金屬_化物燈,並透射含有與如 圖12(A)所示之芯部相對應之特定之閉口圖案(芯層寬度% μιη··芯層數量/縱向12根;橫向12根:芯層間距/縱向Η, μη,·橫向125 μιη:正交形)、以及與包覆部及低折射區域 相對應之特定之開口圖案(低折射區域寬度為5 pm)的光 罩,對該乾燥塗膜照射波長未達3〇〇 nn^$ 365 下之第 1紫外光(照射量為500 mj/cm2)。將照射後之塗膜放入烘箱 中,實施如下之加熱處理,即最初於5〇r下加熱3〇分鐘, 然後於85乞下加熱30分鐘,其後於15〇()(:下加熱6〇分鐘。 可於最初之在50。〇下加熱1〇分鐘之時點,以目視確認塗膜 内之波導圖案。加熱處理後,將塗膜自pET膜上剝離,從 而形成包含防干擾包覆結構之交叉型波導芯層。 <鏡加工> 將上述芯層(包含防干擾包覆結構之交叉型波導芯層)(厚 138984.doc •71 · 201009408 度為50 μιη’芯層寬度為50 μιη)之與鏡加工面相反側之面 貼附於具有黏著性之基板(Magic-resin : Toyo Corporation 股份有限公司製造)上。將該基板配置於準分子雷射裝置 之微動台上’抽吸基板之固定面而加以固定。繼而,以使 二層波導之芯部之長度方向與微動台之可動方向一致之方 式旋轉微動台進行對準調整後,以使雷射照射區域(1〇χ7〇 - μιη)之中心到達芯部之交叉區域之中心之方式進行調整。 繼而,一面使作為輔助氣體之He氣體以2·〇 L/min流向芯部 之鏡加工部位,一面使微動台以5 pm/sec於芯部之交又區 _ 域之對角線上移動70 μιη,其間照射頻率為1〇〇 Hz之雷 射。照射後,使用掃描型電予顯微鏡(SEM)觀察該切削 面,結果幾乎未發現堆積於切削面上之膠渣(已碳化之雷 射剝姓物),切削面非常平滑。 以與實施例i相同之方式’對傳輸損耗、鏡損耗、鏡部 之平滑性、拉伸強度及膠潰產生量進行測定,結果實施例 2之包含防干擾包覆結構之交叉型波導形之三層光波導的 任一特性均顯示與實施例光波導同等之特性。 鬱 【圖式簡單說明】 圖1⑷、⑻❹意性地表示光波導之基本結構之部分, 立體圖; 圖2係示意性地表示對光波導中 <鲵面進行劃定之先前 結構之一例的橫剖面圖; 圖3係示意性地表示對光波導中 覜面進行劃定之本發 明的中空鏡結構體之一例的橫剖 138984.doc •72· 201009408 圖4(A)〜(C)係示意性地表示本發明之其他態樣之中空鏡 結構體之橫剖面圖; 圖5(A)、(B)係示意性地表示本發明之將複數根芯部多 條配設之光波導之平面圖; 圖6係示意性地表示本發明之芯部分支之光波導之平面 圖; 圖7係示意性地表示本發明之將光路方向於平面内轉換 成大致直角之光波導之平面圖; ® 圖8係示意性地表示本發明之包含中空鏡結構體之交叉 型波導之平面圖; 圖9(A)~(D)係示意性地表示本發明之光路之各種分支態 樣之平面圖; 圖10(A)、(B)係示意性地表示本發明之包含中空鏡結構 體之多層化交叉型波導之部分立體圖; 圖11係示意性地表示具有防干擾包覆結構之交叉型波導 之一例之平面圖; 圖12(A)、(B)係示意性地表示適合於防干擾包覆結構之 製造之方法的步驟例之一部分之平面圖(A)及橫剖面圖 ' (B); • 圖13(A)、(B)係示意性地表示本發明之適合於將中空鏡 結構體設置於交叉型波導之交叉區域之方法的步驟之一部 分之平面圖; 圖14係示意性地表示本發明之適合於光波導之製造之方 法(後照射法)的步驟例之一部分之橫剖面圖; 138984.doc •73· 201009408 圖1 5係示意性地表示本發明之適合於光波導之製造之方 法(後照射法)的步驟例之一部分之橫剖面圖; 圖16係示意性地表示本發明之包含光波導與發光元件及/ 或受光元件之光波導模組之一例的橫剖面圖; 圖17係示意性地表示本發明之包含光波導模組與電路基 板之光元件安裝基板之一例的橫剖面圖; 圖1 8(A)〜(C)係示意性地表示包含接收結構之本發明之 光元件安裝基板之一例的橫剖面圖;及 圖19係表示伴隨芯部之長度之變化之總光損耗之變化的 圖。 【主要元件符號說明】 光波導 芯部 上部包覆層 &覆部 下部包覆層 1 、 10 ' 20 、 90 、 240 2 ' 12 ' 22 ' 32 ' 42 ' 52 ' 62、72、82、92 ' 101 ' 352 ' 362 ' 372 3、1 1、21、31、41、51、 93 、 351 、 361 、 371 3'、96、102 4 、 13 、 23 、 33 、 43 、 53 、 97 、 353 、 363 、 373 14 ' 24 ' 34 ' 44 ' 54 ' 64 ' 74、84 ' 94 ' 354 ' 364、 374 91、91, 光罩閉口部 138984.doc 74- 201009408Wt〇/. Copolymer solution (50 g). Two antioxidants were added to the solution [Irganox 1076 (0.01 gmrgaf〇s ι68 (〇〇〇25 g)) manufactured by Ciba and a second photoacid generator with a maximum absorption wavelength of 335 nm (manufactured by Toyo Ink Manufacturing Co., Ltd.). After TAG-382, 0.2 g), it was uniformly dissolved, and then filtered using a 〇2 μπι pore size filter to prepare a coating varnish. <Preparation of coating film material> 10 g of varnish was injected onto a PET film having a thickness of 100 μm disposed on a water platform, and the coating layer was spread with a doctor blade to a substantially fixed thickness to form a coating film for the coating varnish (before drying) The thickness of the coating film was 30 μm. The coating film was placed in a dryer together with a PET film, and heated at 5 (rc for 15 minutes) to evaporate the toluene to obtain a dried coating film having a thickness of 2 μm. The dried coating film is peeled off from the PET film to form a coating film material. 3. The three-layer optical waveguide is manufactured in one layer on each surface of the core layer (20×20 cm in size) containing the hollow mirror structure. One piece of the above coating film material (size 25x25 cm). The three-layer laminated body was put into a laminator set to 12 ° C, and thermocompression-bonded for 5 minutes under a pressure of 0.2 MPa. Thereafter, the three-layer laminated body was returned to room temperature and normal pressure, and the three-layer laminated layer was laminated. A PET film having a thickness of 100 μm is disposed between the body and the high pressure mercury lamp as a wavelength blocking filter for blocking wavelengths below 300 nm. Then, the second ultraviolet light is irradiated from the high pressure mercury lamp through the wavelength cut filter (the amount of irradiation is 100 mj/cm2). After the irradiation, the three-layer laminated body is not placed 138984.doc 66-201009408, and placed directly into the dryer (placement time is 〇 minute), and heated at 150C for 30 minutes to complete the package. The hardening stratification of the coating film material and the adhesion between the core layer/cladding layer strengthens the Pingping stomach # /, 1 will insert the double-sided adhesive tape into a copper layer (conductor layer) with a thickness of 45 and a three-layer laminate The two were joined by roll lamination, and then the following evaluation was performed. 4. Evaluation ° <Transmission loss> Regarding the transmission loss of the obtained three-layer optical waveguide, the following truncation method was used. Determination, the retrospective method refers to the light generated by the laser diode After the fiber is input from the end of the core, the output from the other end is measured, and then the length of the core is cut into several levels, and the light output is measured for each length. The optical loss is expressed by the following equation: Total optical loss (dB) = -l〇i Og(pn/p〇) In the above formula, Pn is determined at the other end of the core of each length of Pi, P2, ... pn Output, PO is the measurement output of the light source at the end of the fiber before coupling the fiber to one end of the core. Secondly, the total optical loss is shown in Figure 19. The regression line of the data is represented by the following formula. y=mx+b In the above formula, m represents the light transmission loss, and b represents the coupling loss. The optical waveguide of Example 1 has a transmission loss of 0.06 dB/cm. <Mirror Loss> Regarding the loss of the mirror portion of the obtained three-layer optical waveguide, the light generated from the laser diode or the surface-emitting laser (VCSEL) is transmitted through the optical fiber from the core 138984.doc - 67- 201009408 One-end input, and measure the output of the light that penetrates the cladding after being reflected by the inclined portion of the mirror, and obtain the total optical loss represented by the following equation. Total optical loss (dB) = -101 〇g(Pl/P〇) In the above formula, P1 is the output measured at the upper part of the inclined portion, and p〇 is the end of the optical fiber before coupling the optical fiber to one end of the core. The measured output of the light source. The loss of the mirror portion is calculated from the total optical loss obtained minus the loss of the straight portion and the loss of the coupling portion between the optical fiber and the core. The loss of the mirror portion of the optical waveguide of Example 1 was 0.5 dB/cm. <Smoothness of Mirror Section> Regarding the smoothness of the mirror portion of the obtained three-layer optical waveguide, a laser scanning microscope (Lxet OLS-3 100 manufactured by Olympus Corporation) was used. The maximum height of the protrusions on the mirror surface is directly measured by setting the mirror surface of the three-layer optical waveguide to be substantially horizontal. The smoothness of the mirror portion of the implemented optical waveguide is less than 100 nm. <Tensile Strength> When the two-layer optical waveguide obtained by the field is cut into the shape of the test piece specified in JIS K7127, the mirror is placed at the narrowest parallel portion corresponding to the center of the test piece. The both ends of the sheet are clamped to the chuck portion of the tensile testing machine (A&D shares, tensile tester tensil〇n stm_T-5〇), and then the crosshead speed is maintained at 5 The em/min-face allows the test maneuver to measure the strength of the test piece when it is broken. The optical waveguide of the embodiment has a tensile strength of 5 〇〇 gf/cm or more. <Gase generation amount> When a mirror portion (hollow mirror structure) of a two-layer optical waveguide is prepared, the fine carbonized dust adhered to the mirror portion by excimer laser ablation is observed by visual observation 138984.doc 201009408 (Glue) production amount (attachment area). In the optical waveguide of Example 1, almost no slag was observed. Comparative Example 1 A three-layer optical waveguide was produced at one time in the same manner as in Example 1 except that mirror processing was not performed on the core layer (single-layer optical waveguide element film). Then, using the excimer laser adjusted in the same manner as in Embodiment 1, the three-layer optical waveguide was subjected to mirror processing in the following manner. The base film (PES) on one side of the above-mentioned three-layer optical waveguide was peeled off, and then the surface on the opposite side to the mirror-finished surface was attached to an adhesive substrate (Magic-resin: manufactured by Toyo Corporation). . The substrate is placed on a micro-motion stage of the excimer laser device, and the fixed surface of the substrate is fixed. Then, the micro-motion stage is rotated so that the longitudinal direction of the core of the three-layer waveguide coincides with the movable direction of the micro-motion stage, and alignment adjustment is performed so that the center of the laser irradiation area (1 〇〇χ 1 〇〇 μηη) Adjust the way to the center of the core. Then, while the He gas as the assist gas flows to the mirror processing portion of the core at 2.0 L/min, the micro-motion stage is moved by 15 μm in the optical path direction at 16 μm/sec, and the irradiation frequency is 1 〇〇 Hz. Laser. After the irradiation, the three-layer optical waveguide was cut along the core, and the cross-section was observed. As a result, the core layer was spread from the lower cladding layer, and a 45-degree inclination was formed with respect to the plane defined by the three-layer optical waveguide. Further, when the inclined surface (mirror surface) was observed using a scanning electron microscope (SEM), the adhesion area of the slag (carbonized laser ablation material) deposited on the mirror surface was wider than that of the example i, but the mirror surface was smooth. . 138984.doc -69· 201009408 The measurement of the transmission loss, the mirror loss, the mirror: smoothness, the tensile strength, and the amount of glue generation were measured in the same manner as in the example i. The results of the measurements are summarized in Table i together with the measurement results of the above examples. Table 1 Transmission loss dB/cm < 0.1 dB <1.0 —_____ <100 Example 1 Tensile strength g^cm >500 Slag production amount---- 比较 Less Comparative Example 1 ----- --- <0.1 ---- 1 <1.0 —s〇〇___ <50 Ding people can be seen from Table 1, regarding the performance of the mirror (transmission loss, mirror loss, smoothness), Example 1 and comparison There are no significant differences between the cases. On the other hand, regarding the tensile strength representing the mechanical strength of the optical waveguide, Example 5 showed a value of 10 times or more of Comparative Example 1. Further, Comparative Example 1 was more than Comparative Example 1 in terms of the amount of generated slag. The reason for this is that, in contrast to the example i in which the core layer is ablated, in the comparative example i, not only the core 1 but also the coating layer must be peeled off. Since the size of each rubber particle is 100 nm or less, the rubber particle does not have a large influence on the smoothness, but (4) when the amount of production increases, the glue particles agglomerate each other and damage the mirror surface. Make mirror loss: worse. In addition, when the mirror surface of the embodiment is coated, it is not closed, so it is less likely to be stained by the adhesion of dust or dust from the outside than the mirror surface exposed to the surrounding environment. Further, as an advantage of mirroring, in the comparative example i, in order to ablate the upper cladding with a fixed wedge angle, a relatively large mask (core layer width: multiple or more) is required, and艸 Just peel off the layer: Yes, so you can use a smaller mask (15 times more than the width of the core). 138984.doc 201009408 Example 2 In the same manner as in Example 制造, the manufacture of the <core layer (single layer optical waveguide element film)> and <mirror processing> was changed as follows. A three-layer optical waveguide that interferes with the cross-waveguide shape of the cladding structure. <Preparation of a cross-type waveguide core layer including an interference-preventing coating structure> 10 g of a core layer varnish was injected on a polyethylene terephthalate (PET) film having a thickness of 25 〇μπΐ2, and used to a knife The core layer is expanded to a substantially constant thickness with a varnish to form a coating film for the varnish for the core layer (the thickness before drying is 7 〇μπ〇. The coating film is placed on the heating plate together with the PET film at 5 (^ The mixture was heated for 45 minutes, whereby toluene was evaporated to obtain a dried coating film having a thickness of 5 Å. A still-pressure mercury lamp or a metal-based lamp was used, and the transmission contained a specific one corresponding to the core as shown in Fig. 12(A). Closed pattern (core width % μηη··number of core layers / 12 longitudinal directions; 12 transverse directions: core layer spacing / longitudinal Η, μη, · lateral 125 μιη: orthogonal shape), and with cladding and low refraction The mask corresponding to the specific opening pattern (the low refractive area width is 5 pm), and the dried coating film is irradiated with the first ultraviolet light having a wavelength of less than 3〇〇nn^$ 365 (the irradiation amount is 500 mj/ Cm2). The irradiated coating film is placed in an oven, and the following heat treatment is performed, that is, initially at 5 Heat for 3 minutes at 〇r, then heat at 85 30 for 30 minutes, then heat at 15 〇() (: for 6 〇 minutes. It can be heated at the first 50 minutes under the armpit for 1 minute to visualize. The waveguide pattern in the coating film is confirmed. After the heat treatment, the coating film is peeled off from the pET film to form a cross-waveguide core layer including the interference-preventing coating structure. <Mirror processing> The core layer (including anti-interference) The cross-shaped waveguide core layer of the cladding structure) (thickness 138984.doc •71 · 201009408 degree 50 μιη 'core layer width 50 μηη) is attached to the adhesive substrate on the opposite side of the mirror processing surface (Magic -resin : manufactured by Toyo Corporation Co., Ltd.) The substrate is placed on the micro-motion stage of the excimer laser device to 'suck the fixed surface of the substrate and fixed. Then, the length direction of the core of the two-layer waveguide is fixed. After the micro-motion stage is rotated in alignment with the movable direction of the micro-motion stage, the alignment is adjusted so that the center of the laser irradiation area (1〇χ7〇-μιη) reaches the center of the intersection area of the core. Then, one side is adjusted. Make The He gas of the assist gas flows to the mirror processing portion of the core at 2·〇L/min, and the micro-motion stage is moved by 70 μm at 5 pm/sec on the diagonal line of the intersection of the core and the region, and the irradiation frequency is 1 Hz laser. After the irradiation, the cutting surface was observed using a scanning electron microscope (SEM), and as a result, almost no slag accumulated on the cutting surface (carbonized laser stripping property) was observed. Very smooth. The transmission loss, the mirror loss, the smoothness of the mirror portion, the tensile strength, and the amount of gelation were measured in the same manner as in Example i. As a result, the cross-type of the anti-interference coating structure of Example 2 was obtained. Any of the characteristics of the waveguide-shaped three-layer optical waveguide shows the same characteristics as the optical waveguide of the embodiment. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 (4) and (8) schematically show a part of a basic structure of an optical waveguide, and a perspective view; Fig. 2 is a schematic view showing an example of a prior art structure for delineating a <鲵 plane in an optical waveguide; Fig. 3 is a cross-sectional view schematically showing an example of a hollow mirror structure of the present invention for defining a facet in an optical waveguide. 138984.doc • 72· 201009408 Fig. 4 (A) to (C) are schematic diagrams A cross-sectional view of a hollow mirror structure of another aspect of the present invention is schematically shown; and FIGS. 5(A) and (B) are schematic views showing a plan view of a plurality of optical waveguides in which a plurality of cores are disposed in the present invention. Figure 6 is a plan view schematically showing an optical waveguide of a core portion of the present invention; Figure 7 is a plan view schematically showing an optical waveguide of the present invention for converting an optical path direction into a substantially right angle in a plane; A plan view schematically showing a cross-type waveguide including a hollow mirror structure of the present invention; and Figs. 9(A) to (D) are schematic views showing various branches of the optical path of the present invention; Fig. 10(A) And (B) schematically represents the inclusion of the present invention. FIG. 11 is a plan view schematically showing an example of a cross-type waveguide having an interference-preventing cladding structure; FIG. 12 (A) and (B) are schematically shown. A plan view (A) and a cross-sectional view (B) of a part of a step of a method suitable for the manufacture of an interference-preventing cladding structure; • Figures 13 (A) and (B) schematically show that the present invention is suitable for A plan view of a part of the steps of the method of arranging the hollow mirror structure at the intersection of the cross-type waveguides; FIG. 14 is a view schematically showing a part of the steps of the method (post-illumination method) suitable for the manufacture of the optical waveguide of the present invention. Cross-sectional view of FIG. 1 is a cross-sectional view schematically showing a part of a step of a method (post-irradiation method) suitable for the manufacture of an optical waveguide of the present invention; FIG. A cross-sectional view showing an example of an optical waveguide module including an optical waveguide and a light-emitting element and/or a light-receiving element of the present invention; FIG. 17 is a view schematically showing light including an optical waveguide module and a circuit substrate of the present invention. A cross-sectional view of an example of a component mounting substrate; Fig. 18 (A) to (C) schematically show a cross-sectional view of an example of the optical component mounting substrate of the present invention including a receiving structure; and Fig. 19 shows a companion core A graph of the change in total optical loss as a function of the length of the portion. [Description of main component symbols] Optical waveguide core upper cladding layer & cladding lower cladding layer 1 , 10 ' 20 , 90 , 240 2 ' 12 ' 22 ' 32 ' 42 ' 52 ' 62, 72, 82, 92 ' 101 ' 352 ' 362 ' 372 3, 1 1 , 21 , 31 , 41 , 51 , 93 , 351 , 361 , 371 3 ' , 96 , 102 4 , 13 , 23 , 33 , 43 , 53 , 97 , 353 , 363, 373 14 ' 24 ' 34 ' 44 ' 54 ' 64 ' 74, 84 ' 94 ' 354 ' 364, 374 91, 91, mask closed 138984.doc 74- 201009408
92' 交叉區域 95 層間包覆層 98 雷射照射部 100 芯層膜材料 110 芯層 120 光罩 200 包覆層膜材料 210 包覆層 220 波長截止濾光片 230 積層體 350 光波導模組 355 ' 365 ' 375 發光元件及/或受光元件 356 受光部 357 支持構件 360 > 370 光元件安裝基板 366 發光部 367 ' 377 金屬突起部 368 電極墊 369、379 導體電路 378 導電性接著劑 380 導體接線柱 A 光波導模組 B 電路基板 LP 光路 138984.doc -75-92' intersection area 95 interlayer coating 98 laser irradiation unit 100 core film material 110 core layer 120 photomask 200 cladding film material 210 cladding layer 220 wavelength cut filter 230 laminated body 350 optical waveguide module 355 ' 365 ' 375 light-emitting element and/or light-receiving element 356 light-receiving portion 357 supporting member 360 > 370 optical element mounting substrate 366 light-emitting portion 367 ' 377 metal protruding portion 368 electrode pad 369, 379 conductor circuit 378 conductive adhesive 380 conductor wiring Column A Optical Waveguide Module B Circuit Board LP Optical Path 138984.doc -75-
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JP2008217074A JP2009145867A (en) | 2007-11-22 | 2008-08-26 | Optical waveguide, optical waveguide module, and optical element mounting substrate |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104126138A (en) * | 2012-02-27 | 2014-10-29 | 住友电木株式会社 | Optical waveguide, optical wiring component, optical waveguide module and electronic device |
US10276908B2 (en) | 2016-12-23 | 2019-04-30 | Industrial Technology Research Institute | Electromagnetic wave transmission board and differential electromagnetic wave transmission board |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013137333A (en) * | 2010-04-08 | 2013-07-11 | Sumitomo Bakelite Co Ltd | Optical waveguide structure and electronic apparatus |
EP3330759A1 (en) * | 2016-12-05 | 2018-06-06 | IMEC vzw | Photonic circuit light coupler and related method |
CN112485929B (en) * | 2019-09-12 | 2022-12-20 | 源杰科技股份有限公司 | Optical signal generating device |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4130342A (en) * | 1977-05-31 | 1978-12-19 | Sperry Rand Corporation | Passive optical channel crossover, switch and bend structure |
US4747653A (en) * | 1986-03-14 | 1988-05-31 | Northern Telecom Limited | Crossover arrangement for optical conductors |
JP2894735B2 (en) * | 1989-08-30 | 1999-05-24 | 日本電気株式会社 | Optical circuit |
FR2660440B1 (en) * | 1990-04-03 | 1992-10-16 | Commissariat Energie Atomique | INTEGRATED OPTICAL COMPONENT PROTECTED AGAINST THE ENVIRONMENT AND ITS MANUFACTURING METHOD. |
US5253319A (en) * | 1992-02-24 | 1993-10-12 | Corning Incorporated | Planar optical waveguides with planar optical elements |
JPH07168039A (en) * | 1993-12-15 | 1995-07-04 | Ricoh Co Ltd | Optical waveguide device |
JPH11248951A (en) * | 1998-02-27 | 1999-09-17 | Hitachi Cable Ltd | Optical waveguide and its manufacture |
JP2003075670A (en) * | 2001-08-31 | 2003-03-12 | Kddi Submarine Cable Systems Inc | Manufacturing method for reflector |
JP4231355B2 (en) * | 2003-07-17 | 2009-02-25 | 株式会社リコー | Opto-electric composite wiring board |
JP2005070141A (en) * | 2003-08-28 | 2005-03-17 | Ngk Spark Plug Co Ltd | Optical waveguide structure with optical path conversion component and manufacturing method therefor and optical path conversion component |
KR100818622B1 (en) * | 2006-08-14 | 2008-04-01 | 삼성전기주식회사 | Optical printed circuit board and fabricating method therefore |
JP2008112030A (en) * | 2006-10-31 | 2008-05-15 | Sumitomo Bakelite Co Ltd | Optical circuit substrate with adhesive, component for mounting optical element and optical element mounted component |
-
2009
- 2009-03-02 WO PCT/JP2009/054347 patent/WO2010023976A1/en active Application Filing
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CN104126138A (en) * | 2012-02-27 | 2014-10-29 | 住友电木株式会社 | Optical waveguide, optical wiring component, optical waveguide module and electronic device |
US10276908B2 (en) | 2016-12-23 | 2019-04-30 | Industrial Technology Research Institute | Electromagnetic wave transmission board and differential electromagnetic wave transmission board |
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