TW200952193A - Solar module and system composed of a solar cell with a novel rear surface structure - Google Patents
Solar module and system composed of a solar cell with a novel rear surface structure Download PDFInfo
- Publication number
- TW200952193A TW200952193A TW098119181A TW98119181A TW200952193A TW 200952193 A TW200952193 A TW 200952193A TW 098119181 A TW098119181 A TW 098119181A TW 98119181 A TW98119181 A TW 98119181A TW 200952193 A TW200952193 A TW 200952193A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal layer
- photoelectric conversion
- electrode
- loose
- solar cell
- Prior art date
Links
- 239000000463 material Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
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- 229910001128 Sn alloy Inorganic materials 0.000 claims 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 claims 1
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- 239000007769 metal material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
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- 229910052732 germanium Inorganic materials 0.000 description 2
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- 238000007650 screen-printing Methods 0.000 description 2
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- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910000733 Li alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000003181 co-melting Methods 0.000 description 1
- 230000001112 coagulating effect Effects 0.000 description 1
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- 238000001816 cooling Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
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- 239000001989 lithium alloy Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/10009—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets
- B32B17/10018—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the number, the constitution or treatment of glass sheets comprising only one glass sheet
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
- B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
- B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
- B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
- B32B17/10788—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer containing ethylene vinylacetate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2327/00—Polyvinylhalogenides
- B32B2327/12—Polyvinylhalogenides containing fluorine
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Description
200952193 六、發明說明: 【發明所屬之技術領域】 作方式,尤指一種具 以該太陽能電池所製 本發明涉及一種具結晶石夕太陽能電池以及製 有全面背面電場的太陽能電池。本發明亦揭露了 作的模組與系統。 〃
【先前技術】 近年來世界能源的短缺所導致的油價飄升,加上二氧化碳濃度遽 增,導致溫室效應的嚴重後果,使得全球各個國家無不積極地投入節 能減碳產品的開發’例如太陽能電池即是這個趨勢下的產物。根據統 計全球太陽能纽之钱量,於麵年為百萬瓦,崎聰 年時僅有21百萬瓦。全球太陽能電池產#的產值,在近幾年來呈現倍 ©數的成長,-種在半導體產錢的—新興事業。太陽能電池係一° 種能將太陽能直接轉化為電能之裝置,以材料來區分,可分為矽太陽 忐電池以及化合物太陽能兩大類。後者包括三五族等種類但市場以 及生產成本高昂,使用上多限於太空或是特殊用途,而前者為目前市 場之大宗’包含結晶矽以及非晶矽兩種。 目刖最具量產規模的太陽能電池是結晶石夕太陽能電池,主要結構 ; 是矽晶原料的基板。太陽能電池轉換機制為:太陽能輻射照射於太陽 • 能電池表面後,使得電子與電洞分別移動至正面η型摻雜區(n-type 200952193 • D_Reg_X及背面p型掺祕(pDGpedRegiQn),造成兩區域間的 電壓差以及微再由正貞分職㈣子與翻並輸出。因此電極 與摻雜區若能有好的殴姆接觸(〇hmicC〇n㈣,則可以讓電子與電洞 的收集更加容易,同時減少電子與電洞的歐姆損失(〇hmic進而 加太陽能電池的轉換效率。 ) 曰 因此在太陽能電池的正面電極的設計上,由於電池的正面都具有 碜整面的η型摻雜區(η-_ϋ〇ΜΚ_η),因此正㈣極都可以與正面 η型摻雜區有良好的電性接觸。、 但於背面電極的設計上,因為紹是一個便宜且導電性高的ρ型材 料,因此ρ型掺雜區(p_typeD〇pedRegi〇n)多是以網印塗 池背面的方式經燒結後產生,同時p型掺雜區也會形成背面電場(Back surface field)。但燒結後的銘會於接觸空氣的表面產生—層氧化層,氧 化層不但會增加電阻,且會造讀面電極科串焊的問題。曰 有許多先前技術之改良較為了因為克服上述的問題。目前最常 用的也是市面上多數結晶秋陽能電池所制的方制卩是利用塗佈不 連續的铭’產生非整面的p型掺雜區,其中這些不連續的位置,會將 石夕表面暴1: it}來’並可魏合適的導電膠(如銀卵彳㈣位置再經 燒結後,則可產生合適的串接區(111把1>(:011116(^〇11邱(1)。但是以這種方 式製作的太陽能電池因為不連續的p型掺雜區導致背面電場是不連續 -的,料連_區域也是背面電極的串焊區,除了會増加載子復合的 •機率外,降低短路電流(Isc)以及降低填滿比例(FiUFact〇r)導致整^光 4 200952193 轉換效率的下降。 本^揭露了一種可焊接的全面背電場結構之太陽能電池,同時 焊接的原因’本發明同時揭露包含此結制太陽能電池的太陽 月b模組,與太陽能發電系統。 【發明内容】 本發明所揭露的結構是—個具有全面P型掺祕社陽能電池, 並且在這個結構下’解決氧化層無法串焊關題。同時可提昇短路電 流(Isc)以及填充因子(Fill Fact〇r),因此可以增加整體的光電轉換效率。 …本發明另—個目__也揭露了上述電池串接而成的太陽 能模组’以及系統。 ❿ & 了達成上述目的,本發明揭露之技術特徵為先將含有祖族金 屬之凝膠咖你)以整面塗佈的方式塗佈於太陽能電池基板之背面。經 高溫燒結後,金屬會合金化社陽能基板之麵產生緻密金屬層即金 屬-石夕合金層,並於基板背面產生口型掺雜區,而靠近空氣之該金屬凝 膠表面3產生一#A、散的氧化層結構即鬆散金屬層。隨後除去部分位置 的鬆散金屬層形成電極開口。 本發明之太陽能電池將可焊接材料導入於該背面電極開口中,並 使上述焊接材料能與該緻密金屬層有良好之接觸。 5 200952193 择二/成述目的’本發明揭露之結構特料—個太陽能電池的 I、、、°構’其中包含—個鬆散金屬層…個緻密金屬層,以及-P型 Γ個以上的電極開口,該電極開口是除讀散金屬層後產生, 並可於上述開口處填入可焊接之材料。 ❿ ❹ 之方ΓΓΓ去鬆散金屬層之方式可利用⑴雷射除去綱餘刻 2式,如將預除去的鬆散金屬層浸潤於含有耻^腦4的水環 ^,^^B〇r〇nTnchl〇nde(BC13)>Chlonde^ form (CHC13)、Nitrogen ㈣及 Am_ 包括w崎體,高驗體或固= 鬆散金Pi方式,龄式去除部分位置的 又本發明中所提及的可焊接材料需可以對於緻密金屬層以及 ,..,.^(OhmicC0ntact), 有銀、銅、錫、鋅、把、錄之其中—種金屬之凝膠, ^ 上之上述金屬的合金或混合物之凝膠。 另兩種以 述之導入可焊接材料到該電極開口之方式 -=,或疋兩種以上組合之方式:⑴顧;(2)汽相沈 方式包括條紋式塗伟或方塊塗佈;(4)印刷方式包含喷墨、網印、=佈 活版、熱感、點膠印刷或轉印;(5)蓋印;⑹化學沈積包括電錢或無 6 200952193 • 電鑛。 ’解決全面背電極的結構下 本發明藉由先除去鬆散金屬層之方式 無法串焊的問題。 ❿ 另外’本發明之太陽能電池結構於該電極開口處導入可焊接 後即可直接與導線焊接,因此本發明亦揭露—種含有此太陽能電池之 太陽能模組。該太陽能模組主要之組成包括—似上_太陽能電 池二-條以上之導線,該導線將上述電池焊接成電池串卜透明薄膜, 覆蓋於電池串上,—基底膜,置於電池串下並和能上述透明薄膜良好 貼附’-透明覆紐’具光可?透的雜,可將絲導人電池表面上, 一基底板’基錢為可闕水氣,且具有良好魏緣性之材料。 進一步,本發明也揭露了-種_上述太陽能模組總和的太陽能 發電系統,該系統包含-個以上的太陽能模組,該模組是由本發明揭 ❹露之太陽能f賴構成。該纽可分為兩缝,—為可與—般市電直 接相連另一種為不與市電相連。 【實施方式】 本發明較佳實施例將於以下描述之。 於最佳實施例中,IIIA族金屬凝膠為含鋁之凝膠。 7 200952193 以結構描述,圖1表示本發明駐要結構,其中圖丨為整個的太 陽能電池結構包含-基板101 ’包含一正面1〇7與背面1〇8。在電池的 正面107之結構中,包含一個抗反射層11〇覆蓋於正面1〇7上,一 p-n接合區(p-njunction)106位於正面表面之下方。背面1〇8之結構中, 包含一背電場(Back Surface Field)。該p型掺雜區1〇2是由整面塗佈的 方式塗佈含蚊凝職’經不高於副^之高溫燒結再經冷卻所產生 的。銘凝膠經燒結後也會同時產生鬆散紹層1〇4以及緻密铭層1〇3。 圖2是本發明實施例之掃描電子顯微照片(SEM),p型掺雜區2〇2緊鄰 於太陽能電池基板201是紹在燒結過程中渗透到基板中所形成,因此 含有較高濃度的紹’而緊鄰於p型掺雜區2〇2下的依序是緻密紹層2〇3 與鬆散_ 2〇4,贿歸組絲紳合金,是燒結過財綠膠和 基板(201)表面的矽共熔經冷卻後所產生且結構較鬆散鋁層2〇4緻密許 多,鬆散鋁層204是鋁凝膠經燒結產生的氧化鋁顆粒,結構鬆散。參 考圖1與圖2’其中的電極開口 1〇9是沒有鬆散紹層1〇4,因此可焊接 材料105可以直接與緻密鋁層有良好的接觸。 以手段描述本發明之最佳實施例,參考圖3所表示是製作本發明 所述之太陽能電池的主要步驟,其中包括:〇)將鋁凝膠大致以整面塗 佈的方式塗佈在太陽能電池基板的背面108 ; (2)經高溫燒結後,產生 P型掺雜區102,202 ’緻密鋁層103,2〇3與鬆散鋁層ι〇4,2〇4 ; (3) 再以雷射光除去部份位置之鬆散鋁層104,204成為背面電極開口 1〇9。 本發明之手段,可進一步將可焊接材料105塗佈於背面電極開口 200952193 * 109中。於最佳實施例中,可焊接材料為錫鋅之合金,其中辞的含量 約佔5至50%之比例。 另外,如圖4,本發明之太陽能電池結構於該電極開口處導入可 焊接材料後即可與導線403焊接,因此本發明亦揭露一種含有此太陽 能電池之太陽賭組。該太陽能她主要之組成包括—細上的的太 陽能電池406 ’ -導線403 ’該導線將上述電池焊接成電池串;一透明 ❹薄膜402,覆蓋於電池串上;一基底膜姻,置於電池串下並和能上述 透明薄膜402良好貼附;-透明覆蓋板4(n,具光可穿透的特性,可 將光源導入電池表面上,-基底板4〇5,基底板4〇5為可隔絕水氣, 且具有良好的絕緣性之材料。 於最佳實施例中’導線4〇3是鋼外包覆著錫鋅合金之銅導線。且 該透明薄膜402與基底膜404皆為乙稀-醋酸乙婦共聚物(Ε%ΐι
Vinylene Acetate copolymer ’簡稱EVA)。透明覆蓋板4〇ι可為玻璃或 ❹是硬化塑酯。 如圖五所示’本發明進一步也揭露了一種利用上述太陽能模組 5〇1 曰的太陽能發電祕,該祕包含—個社的太陽賴組5G1,該模 組是由本發_露之續能電池所構成。該系統可分為兩大類,一為 可與一般市電直接相連另一種為不與市電相連。 表1為本發明與傳統不連續背電場之太陽能電池之效率比較,於 多晶石夕之太陽能電池之效率比較結果中,同—測試環境下比較,一般 9 200952193 *傳統太陽能電池之平均光轉換效率為Μ.97%,而本發明之太陽能電池 的平均效率為15,11〇/0,光電轉換率約增加〇观。於單晶石夕太陽能電 池之效率比較結果中,傳統太陽能電池之平均光轉換效率為1666%, 而本發明之太陽能電池的平均效率為16.81%,光電轉換率約增加 0.15%。 【圖式簡單說明】 ❹ 圖1係根據本發明之太陽能電池的一戴面。 圖2係根據本發明之手段製作出的太陽能電池之掃描式電子顯微 照片。 圖3係本發明之製作程序。 圖4係本發明揭露之模組結構。 圖5係本發明揭露之系統主要結構。 表1係依本發明揭露之技術手段製作出之太陽能電池與傳統不連 ❹續背面電極之太陽能電池之效率比較結果。 【主要元件符號說明】 1 太陽能電池 101,201太陽能電池基板 102, 202 p型摻雜區 . 1〇3,203緻密鋁層 • 104,204鬆散鋁層 200952193 105 可焊接材料 106 正面電場 107 正面電極 108 太陽能電池背面 109 背面電極開口 4, 501太陽能模組 401 透明覆蓋板 402 透明薄膜 403 導線 404 基底膜 405 基底板 406 太陽能電池 502 電源轉換器
Claims (1)
- 200952193 • 七、申請專利範圍: 卜種光電轉:之裝置,包含:一梦基板、—p參雜區、一敏密金属 ’該電極 概之繼咐七-— ❹ 3. 4.如材 =A範=所述之蝴換裝置,其中簡散金屬層之 ⑩ 5. =1範=Γ述之光電轉換裝置,其中除去鬆散金屬層 式。 3絲核是⑹研磨龄式或上述方式的組合方 6.:請=::=。’其_為銀、銅, 7. 士申印專利細第3項所述之緻密金屬層之材料為紹 12 200952193 8. 如申請專利範圍第4項所述之鬆散金制之材料為銘。 9. 如申請專簡_ 5項所述之除絲散金制之方式為雷射除去。 瓜如申請專利範圍第6項所述之可焊接材料為錫鋅合金。 ❹㈣2項所述放置焊接材料於電_口之方式包 ⑹汽相沈積;(3)塗佈方式撕刷方式;⑶蓋印; ()化干沈積或上述方式之組合方式。 12. —種模組化的光電轉換裝置,其中包括: 複_光電轉換裝置,其中該光電轉換裝置具有-石夕基板、- P參雜 ^ i密金屬層、-鬆散金屬層、—個以上的電極開口該電極 除絲散金屬層之部份位置職生一可焊接材料,其位 ❹ ^電極開口並與賴密金顧相_、—轉,其由該可禪 材料與該緻密轉有雜接觸,並連接該複數個光電轉換襄置。 13. 狀雜,射顧鐵層之材料為 14. 如之::=:述之先電轉換裝置,其中該鬆散金屬層 ♦ 13 200952193 Λ 15.如申請專利範圍第12項所述 除去.⑺t 散_之料為.·⑴雷射 ” )/f式_ ’(3)乾式糊;(4)物麟去料 波 除去或是⑹研磨的方式或上述方式的組合方式。 … & =專利範圍第12項所述可_料,其中材料為銀、銅、錫、 辞、鈀或鎳之一種或一種以上之金屬。 ❹Π.如申請專利範圍第12項所述之可焊接材料之以 極開口。 mu先 18.如申請專利範圍第12項所述之緻密金屬層之材料為銘。 仪如申睛專利範圍第u項所述之鬆散金屬層之材料為紹。 20. t申請專利範圍第12項所述之除去鬆散金屬層之方式為雷射除 ❹ 去。 21. 如申請專利範圍第12項所述之可焊接材料為錫辞合金。 辽^申請專利範圍第12項所述之導線,其中金屬材料為可焊錫之材 12項所㈣線,_導料具有—層含 200952193 種系統化的光電轉 以上的模組化光電轉換裝^勺八V 料以月一道綠· # . 匕S複數個光電轉換裝置’一可焊接材 24.- ,其中包括:一個電源轉換器、一個 料以及一導線,農中 區、-緻密金私、:光電轉化裝置具有-雜板、- P參雜 上的可焊接材料,1 、臂、—個以上的電極開口以及一個以 Ο 該可焊接材料係放σ係除去鬆散金屬層之部份位置所產生, 密金屬層間財紐接^㈣σ ’料線储由該電極材料與該緻 八、圓式··15
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TWI476940B (zh) * | 2012-12-28 | 2015-03-11 | Motech Ind Inc | 太陽能電池與太陽能電池模組 |
TWI497743B (zh) * | 2013-03-01 | 2015-08-21 | Univ Nat Taiwan Ocean | 使用物理性氧化物移除方式的矽太陽能電池製造方法與包含以上方法之教具 |
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- 2009-06-02 TW TW098118175A patent/TWI362759B/zh not_active IP Right Cessation
- 2009-06-08 CN CNA2009101470484A patent/CN101604709A/zh active Pending
- 2009-06-08 CN CNA2009101470499A patent/CN101604712A/zh active Pending
- 2009-06-09 TW TW098119181A patent/TW200952193A/zh unknown
- 2009-06-09 EP EP09007626.6A patent/EP2136407A3/en not_active Withdrawn
- 2009-06-09 EP EP09007627.4A patent/EP2136408A3/en not_active Withdrawn
- 2009-06-09 US US12/480,699 patent/US20090301555A1/en not_active Abandoned
- 2009-06-09 US US12/480,697 patent/US7884029B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI476940B (zh) * | 2012-12-28 | 2015-03-11 | Motech Ind Inc | 太陽能電池與太陽能電池模組 |
TWI497743B (zh) * | 2013-03-01 | 2015-08-21 | Univ Nat Taiwan Ocean | 使用物理性氧化物移除方式的矽太陽能電池製造方法與包含以上方法之教具 |
Also Published As
Publication number | Publication date |
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TWI362759B (en) | 2012-04-21 |
EP2136407A3 (en) | 2016-04-27 |
EP2136407A2 (en) | 2009-12-23 |
EP2136408A3 (en) | 2016-04-27 |
US7884029B2 (en) | 2011-02-08 |
US20090305457A1 (en) | 2009-12-10 |
CN101604709A (zh) | 2009-12-16 |
CN101604712A (zh) | 2009-12-16 |
EP2136408A2 (en) | 2009-12-23 |
TW200952199A (en) | 2009-12-16 |
US20090301555A1 (en) | 2009-12-10 |
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