TW200949950A - Heat treatment apparatus - Google Patents
Heat treatment apparatus Download PDFInfo
- Publication number
- TW200949950A TW200949950A TW98110446A TW98110446A TW200949950A TW 200949950 A TW200949950 A TW 200949950A TW 98110446 A TW98110446 A TW 98110446A TW 98110446 A TW98110446 A TW 98110446A TW 200949950 A TW200949950 A TW 200949950A
- Authority
- TW
- Taiwan
- Prior art keywords
- heat treatment
- processing container
- processed
- film
- treatment apparatus
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 165
- 238000011282 treatment Methods 0.000 claims abstract description 33
- 230000000903 blocking effect Effects 0.000 claims abstract description 5
- 238000012545 processing Methods 0.000 claims description 84
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 52
- 238000000137 annealing Methods 0.000 claims description 42
- 230000002093 peripheral effect Effects 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 11
- 238000005259 measurement Methods 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 8
- 230000002265 prevention Effects 0.000 claims description 7
- 238000005286 illumination Methods 0.000 claims description 6
- 238000004088 simulation Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 136
- 239000010409 thin film Substances 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 126
- 239000004065 semiconductor Substances 0.000 description 90
- 239000007789 gas Substances 0.000 description 18
- 239000000126 substance Substances 0.000 description 14
- 230000003028 elevating effect Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 9
- 238000004891 communication Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 241001674044 Blattodea Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005338 frosted glass Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008089069A JP5077018B2 (ja) | 2008-03-31 | 2008-03-31 | 熱処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200949950A true TW200949950A (en) | 2009-12-01 |
Family
ID=41135299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98110446A TW200949950A (en) | 2008-03-31 | 2009-03-30 | Heat treatment apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5077018B2 (enExample) |
| KR (1) | KR20100138984A (enExample) |
| CN (1) | CN101855708B (enExample) |
| TW (1) | TW200949950A (enExample) |
| WO (1) | WO2009122913A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI492307B (zh) * | 2011-07-01 | 2015-07-11 | Hitachi Int Electric Inc | The method of manufacturing a substrate processing apparatus and a semiconductor device |
| TWI650039B (zh) * | 2015-03-06 | 2019-02-01 | 日商思可林集團股份有限公司 | 熱處理裝置 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5466670B2 (ja) * | 2010-10-28 | 2014-04-09 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
| JP5640890B2 (ja) * | 2011-05-23 | 2014-12-17 | ウシオ電機株式会社 | 光照射装置および光照射方法 |
| KR101297981B1 (ko) * | 2011-10-07 | 2013-08-23 | (주) 예스티 | 기판의 열처리 장치 |
| JP5964630B2 (ja) * | 2012-03-27 | 2016-08-03 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| US8785815B2 (en) * | 2012-06-22 | 2014-07-22 | Applied Materials, Inc. | Aperture control of thermal processing radiation |
| CN105261576A (zh) * | 2014-07-15 | 2016-01-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种加热腔室及半导体加工设备 |
| JP6518548B2 (ja) * | 2015-08-10 | 2019-05-22 | 東京応化工業株式会社 | 紫外線照射装置、レジストパターン形成装置、紫外線照射方法及びレジストパターン形成方法 |
| JP6546512B2 (ja) * | 2015-11-04 | 2019-07-17 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| CN107706139A (zh) * | 2017-11-13 | 2018-02-16 | 上海华力微电子有限公司 | 一种半导体加工机台的温度控制装置 |
| JP7048372B2 (ja) * | 2018-03-20 | 2022-04-05 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置および熱処理方法 |
| KR102737498B1 (ko) | 2019-12-13 | 2024-12-04 | 삼성전자주식회사 | 비-접촉식 온도 센서를 가진 공정 설비 |
| JP7546417B2 (ja) | 2020-09-09 | 2024-09-06 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理装置 |
| CN115064471B (zh) * | 2022-08-01 | 2023-11-28 | 北京屹唐半导体科技股份有限公司 | 晶圆的热处理装置 |
| FR3142757A1 (fr) * | 2022-12-05 | 2024-06-07 | Annealsys | Four de recuit thermique rapide à uniformité de chauffage améliorée |
| CN118712105B (zh) * | 2024-08-29 | 2025-02-14 | 一塔半导体(安徽)有限公司 | 一种快速热退火装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09270390A (ja) * | 1996-03-29 | 1997-10-14 | Dainippon Screen Mfg Co Ltd | 基板の光照射式熱処理装置 |
| JPH10321547A (ja) * | 1997-05-22 | 1998-12-04 | Kokusai Electric Co Ltd | 熱処理装置 |
| JP4200844B2 (ja) * | 2003-08-11 | 2008-12-24 | 東京エレクトロン株式会社 | 熱処理装置 |
| JP2006005177A (ja) * | 2004-06-17 | 2006-01-05 | Tokyo Electron Ltd | 熱処理装置 |
-
2008
- 2008-03-31 JP JP2008089069A patent/JP5077018B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-18 CN CN200980100966XA patent/CN101855708B/zh not_active Expired - Fee Related
- 2009-03-18 WO PCT/JP2009/055325 patent/WO2009122913A1/ja not_active Ceased
- 2009-03-18 KR KR1020107021779A patent/KR20100138984A/ko not_active Ceased
- 2009-03-30 TW TW98110446A patent/TW200949950A/zh unknown
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI492307B (zh) * | 2011-07-01 | 2015-07-11 | Hitachi Int Electric Inc | The method of manufacturing a substrate processing apparatus and a semiconductor device |
| US9082797B2 (en) | 2011-07-01 | 2015-07-14 | Hitachi Kokusai Electric, Inc. | Substrate processing apparatus and method of manufacturing semiconductor device |
| TWI650039B (zh) * | 2015-03-06 | 2019-02-01 | 日商思可林集團股份有限公司 | 熱處理裝置 |
| US11089657B2 (en) | 2015-03-06 | 2021-08-10 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment apparatus |
| US12219670B2 (en) | 2015-03-06 | 2025-02-04 | SCREEN Holdings Co., Ltd. | Light-irradiation heat treatment apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009246061A (ja) | 2009-10-22 |
| CN101855708B (zh) | 2012-10-10 |
| CN101855708A (zh) | 2010-10-06 |
| WO2009122913A1 (ja) | 2009-10-08 |
| JP5077018B2 (ja) | 2012-11-21 |
| KR20100138984A (ko) | 2010-12-31 |
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