TW200947139A - Maskless exposure device - Google Patents

Abstract

The invention a maskless exposure device which makes the light axis of the emergent light beam from the semiconductor laser device parallel with high efficiency even in the occasion by utilizing a plurality of semiconductor laser devices as light source. A shaping lens adjusting the emergent angle of each laser beam to the expected angle for each arrangement of a plurality of laser light-sources and a beam angle adjusting mechanism which comprises adjusting lenses and an adjusting lens retaining mechanism positioning the adjusting lens in the direction at a right angle with the light axis thereof arrange the beam adjusting mechanism between the laser light-source and a shaft distance switching device to make the light axis of the adjusting lens and the designed light axis of the laser light-source in parallel and move the adjusting lens to the direction at a right angle with the light ; axis to make the light axis of the laser beam and the designed light axis in parallel.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a maskless exposure apparatus for spotlighting a laser on an exposed object to trace a pattern onto an object to be exposed. [Prior Art] Conventionally, the image is exposed (drawn) on a printed circuit board, a TFT substrate of a liquid crystal display, a color filter substrate, or a substrate of a plasma display, etc. (hereinafter referred to as "substrate"). In the case of the surface, a mask constituting the original pattern is formed, and the pattern formed on the mask is transferred to the substrate by the mask exposure device, thereby performing exposure (drawing). The size of the substrate has gradually increased in recent years, and the time required for designing and manufacturing the substrate has been gradually shortened. Also, when designing the substrate, it is difficult to reduce the design to zero. In most cases, the design is re-evaluated and the mask is remade. In addition, depending on the type of substrate, there are many different types of production. In the past, it was necessary to make a mask for each substrate, and it was unavoidable in terms of cost surface, ® delivery surface, and the like. In view of the above situation, in recent years, there has been a strong demand for a maskless exposure without using a photomask. A method of performing maskless exposure is a method of using a two-dimensional spatial modulator such as a liquid crystal or a DMD (Digital Mirror Device) to generate a two-dimensional pattern, and drawing the same on a substrate with a projection lens. (Patent Document 1). Further, there is a method in which a laser beam modulated by an E0 modulator or an A0 modulator is scanned using a polygon mirror to be drawn on a substrate of 2009. Although the former method can draw a finer pattern, the device is expensive. On the other hand, the latter method is difficult to draw a large area with high definition, but is suitable for drawing a rough pattern in a wider area. Further, the latter method is simple in construction and can be produced at a relatively low cost, and in order to shorten the amount of f, it is necessary to have a large output laser, resulting in a decrease in the cost of purchase and the running cost. Therefore, in order to reduce the cost of the light source, there is a technique in which a plurality of semiconductor lasers are used as a light source (Patent Document 2). In the case of using a plurality of semiconductor lasers as a light source, it is necessary to make each semiconductor in order to improve the drawing quality, in the case of using a plurality of semiconductor lasers as a light source. The optical axes of the beams emitted by the laser are parallel to each other 'but the beam positioning must also be performed with good efficiency. SUMMARY OF THE INVENTION An object of the present invention is to provide a maskless exposure apparatus which can make the optical axes of beams emitted from respective semiconductor lasers parallel, even when a plurality of semiconductor lasers are used as a light source. In order to solve the above problems, the reticle exposure apparatus of the present invention has: a plurality of laser light sources arranged at predetermined intervals; and an inter-axis pitch conversion device ′ aligning laser beams emitted from the laser light source into a certain positional relationship; a long-focus lens; a polygon mirror that scans the laser beam in the y direction; and a θθ lens that condenses the laser beam onto the substrate; the stage 'loads the substrate and moves The direction of the 47200947139 orthogonal to the scanning direction; and the control circuit controls the rotation angle of the polygon mirror, the position of the stage, and the laser light source according to the exposure pattern information, wherein: The laser light sources respectively have beam angle adjusting means, which comprise shaping lenses for adjusting the exit angle of the laser beam to a desired angle, and holding at least one adjusting lens at right angles to the optical axis of the adjusting lens. a direction-moving holding means; the beam angle adjusting means is such that the optical axis of the adjusting lens is identical to the optical axis of the laser light source The mode of the shaft is disposed between the light source and the inter-axis spacing conversion device, and the adjustment lens is moved at a right angle to the optical axis, thereby making the optical axis of the laser source and the design light The axes are parallel. According to the present invention, the optical axes of a plurality of light beams can be made flat with good work efficiency. [Embodiment] Fig. 1 is an overall configuration diagram of a maskless exposure apparatus of the present invention. 2 is an explanatory view of the light source unit 1 of FIG. 1, and (a) is a front view of the light source unit 1 (FIG. 1 is a view from the side of the mirror 100, and the left side of the figure is an upper side). Figure. Further, Fig. 3 is an arrangement diagram of a plurality of light spots which are irradiated onto the exposure substrate. The optical system of the maskless exposure apparatus 200 is composed of a light source unit 丨, a beam angle adjusting means 2, an inter-axis pitch conversion device 14 that compresses a plurality of beam arrangement intervals in one direction, a mirror 1 〇〇, and a long focus lens. 3. The cylindrical lens 34, the mirror 4, the polygon mirror 5, the lens 6, the folding mirror a, the cylindrical lens 61, the stage 7, and the control circuit 9. The control circuit 9 is 5 200947139 for controlling the multi-beam generating unit u, the polygon mirror 5, and the stage 7. The exposure substrate 8 is fixed to the stage 7. As shown in Fig. 2, the light source unit is made of a copper material and is held by a semi-guided laser 12 (hereinafter referred to as "LD") and an aspherical lens.

Mirror) 13 is composed. In the holder u, the LD 12 having 16 containers in the X direction (eight in the left and right sides) and eight in the γ direction are arranged in a container having an outer diameter of 5 to 6 mm. Further, the central axes of the containers of the LD 12 are positioned in the holder 11 in parallel with each other and parallel to the optical axis of the design. As shown by the dotted line in Fig. 2(a), the LD12 system and the adjacent column L〇i2 are each shifted by 13/8 mm. The LD12 system emits a half-peak full-width value of about 22 degrees and y direction. The full width of the half-peak is about 8 degrees of laser light. On the optical axis of the laser beam emitted from the LD 12, an aspherical lens 13 is disposed on each of the LDs 12. The front side focus of the aspherical lens 13 is positioned at the light-emitting point (assuming that the position of the point light source F when the laser beam emitted from the LD 12 is emitted from the point light source) makes the laser beam of the divergent light emitted from the LD 12 parallel. beam. That is, for example, when the focal length fAs of the aspherical lens 13 is 6 mm, the optical axis of the laser beam emitted from the LD 12 is coaxial with the central axis of the container, and the optical axis is coaxial with the optical axis of the aspherical lens 13 The laser beam incident on the aspherical lens 13 is emitted from the aspherical lens 13 by a parallel light ια of a beam diameter (beam diameter of e-2 having an intensity of e-2) of about 4 mm in the X direction and about 1.5 mm in the γ direction. . Further, the optical axis of the laser beam emitted from the LD 12 is inclined with respect to the central axis of the bar (hereinafter referred to as "designed optical axis"), or the optical axis of the laser beam emitted from the LD 12 is Design light 200947139 The axis is parallel 'but the deviation from the optical axis of the design to the vertical direction will be described later. The laser beam emitted from the aspherical lens 13 is incident on the beam angle adjusting means 2. The beam angle adjusting means 2 is provided for each of the lD12. At this time, since the optical axes of all the laser beams are parallel to each other (parallel to the optical axis of the design), the laser beam incident on the beam angle adjusting means 2 is directly transmitted through the beam angle adjusting means 2. In addition, the details of the angle adjustment means 2 will be described later.

A plurality of beams arranged in the xy direction at a distance of 13 mm are incident on the inter-axis distance conversion device 14. As shown in FIG. 2, the inter-axis spacing conversion device 14 is formed by 16 稜鏡14〇1~14〇8, 1411~1418 having a parallelogram in cross section. The multi-beam 〇A is emitted & the multi-beam 1 〇 A 纟χ direction is compressed to about imm. The multi-beam i〇a compressed from the X direction is reflected by the mirror 1 and incident on the long-focus lens 3. The long-focus lens 3 is composed of three groups of spherical lens systems 31 to 33. The spherical lens systems 31 to 33 have positive, negative and positive lens powers (lenSP〇Wer), respectively, and the focal lengths fL of the long-focus lens 3 are about 2 μm. The focal position of the long-focus lens 3 on the exit side thereof is positioned at the reflection surface 多 of the polygon mirror $. The cylindrical lens 34 disposed on the polygon mirror 5 side of the long-focus lens 3 has a focal length of & and the pitch of the multi-beams in the χ direction is further reduced in the X direction (that is, the inter-axis pitch conversion device 14) After the compression of the χ direction, the ^1 is reduced on the polygon mirror surface. The plurality of pre-beams reflected by the polygon mirror 5 are incident on the μ lens 6 having a focal length of Μ, and are bent at a right angle at the folding mirror 7 200947139 62. The multi-beam after the f-folding is concentrated by the cylindrical lens 61 (having power in the direction of the coordinates on the substrate shown on the lower left side of FIG. 1) to collect the χ direction formed by the arrangement shown in FIG. The interval is

The interval between the Px and the y directions is Pyi, and the light spot 80 is irradiated onto the photosensitive surface of the exposure substrate 8. Therefore, when the polygon mirror 5 is rotated counterclockwise in @i, the multiple light spots shown in Fig. 3 are scanned on the exposure substrate 8 in the -y direction. At this time, since any portion to be drawn can be exposed by eight light spots arranged in the y direction, it is possible to perform high-precision and high-precision scanning. In addition, the above description is for the ideal situation (that is, the optical axis of all the laser beams emitted from the LDi2 is coaxial with the optical axis of the design), but sometimes the optical axis of the laser beam emitted by the sister LD12 It will be tilted or offset relative to the design of the first axis (the central axis of the container). 4 is a view showing the optical path of the laser beam emitted from the LD 12, (4) showing the optical path of the design, and (b) the luminous point of the LD12 is located on the central axis of the aspherical lens 13 (at the front focus). The optical path '(4) when the optical axis is tilted indicates the optical path when the light-emitting point of the LD 12 deviates from the central axis of the aspherical lens 13. Further, (4) is a diagram showing an example of adjustment of (4). As shown in the sx diagram (b), the illuminating point F of the LD 12 is located on the "" axis on the aspherical lens 13 (at the front focus), but the ray is emitted from the aspherical lens 13 when the optical axis of the laser beam is tilted. The optical axis of the beam is parallel to the optical axis of the design. (Offset in the direction perpendicular to the optical axis of the design) As shown in the figure (c), when the light-emitting point of the LD 12 deviates from the axis of the aspherical lens 13, the aspherical surface is as shown in the figure (4). The center of the lens u 200947139 When the axis 0 moves to the direction perpendicular to the optical axis of the design, it can reduce the tilt of the optical axis of the setting & ten, that is, when the luminous point of £1) 12 deviates from the aspheric lens When the optical axis of 13 is Δ1, the inclination Δ Θ 1 of the phase 斟 relative to the central axis of the ideal optical axis can be expressed by the following ten]-m ^ 卜1. Therefore, the optical axis of the aspherical lens 13 is made by the means omitted from the illustration. The optical axis 〇 w close to the actual laser beam is reduced by Δ1, whereby Δ Θ 1 (Δ Δ =0) can be reduced. ❹ △ △ Θ 1 = △ 1/fAs (Equation 1} Next, the allowable value of Δ01 is explained. Now, the light of the laser beam incident on the long-focus lens 3 is drawn relative to the optical axis of the design. The angle in the y direction is Δ6 > χ, Α θ γ. The multi-spot arrangement pitch on the exposure substrate is different from the magnification of the entrance pitch of the long-focus lens 3 (image magnification), and the 〇 and y directions are different. Therefore, the optical X and y directions are The magnifications are set to Mx and My, respectively, and fc is set as the focal length of the cylindrical lens 34, c is set as the focal length of the cylindrical lens 61, f β ° is the focal length of the lens 6, and fL is set to be long. When the focal length of the focus lens 3 is attained, Mx and My can be expressed by Equations 2 and 3.

Mx= fcf 0 d{fe fL) ... (Formula 2)

My= f (9 / fL (Expression 3) For example, if the Xy pitch χ, py of the spot on the exposure substrate shown in Fig. 3 is about 5 " m, 20 from m, the value of Mx and My is roughly Mx =〇.0〇5, My-〇·〇15. In the case of the lens system of such magnification, the angular magnifications Μ0χ and Μθγ of the reciprocal of the imaging magnification can be expressed by Equations 4 and 5, respectively. x= 1/ Μχ=200 9 200947139 Μ 0 y= 1/ My= 67 (Formula 5), that is, if the laser beam incident on the long-focus lens 3 is tilted in the xy direction with respect to the designed optical axis, respectively, the substrate The incident angles ex and Δ 0 ey can be expressed by Equations 6 and 7. Δ θ & χ = ΜΘ X Α θ χ = Α θ χ / Μχ = 200 Δ θ x · (. Equation 6) ^ θ & γ = ΜΘ yA Θ y= A θ y/My= 67 A Θ y (Equation 7) Here, it is assumed that the arrangement of multiple spots on the exposure substrate is within the depth of focus Df, which is allowed to the analytical ability r of the drawing. When times, Equations 8 and 9 are satisfied. 0.25r^DfA Θ ex (Expression 8) 0.25r^ Df Δ Θ ey (Expression 9) Now, if r is 5/zm and Df is 300" m, According to (Formula 6) to (Formula 9), Δ 0 X and Δ 0 y must be set as follows. 0 2·1χ1〇-5(rad)= 4·3 seconds Δ 0 y S 6·2χ10 — 5(rad)= 13 seconds, that is, the laser beams incident on the long-focus lens 3 must be set to 5 each other. Parallelism of about seconds. In order to move the axis 〇 of the aspherical lens 13 having a focal length fAs of 6 mm to a direction perpendicular to the optical axis of the design, the laser beam emitted from the aspherical lens 13 is used. When the tilt of the optical axis relative to the optical axis of the design Δ θ 1 is reduced to 5 seconds or less, Δ 1 must be set to 〇·丨 5 or less. However, 'this fine adjustment is very tight when the LD 12 is tightly mounted. Therefore, in the present invention, the beam angle adjusting means 2 is provided, and the beam angle adjusting means 2 adjusts the optical axis of the light beam that emits the aspherical lens 13. Next, "the beam angle adjusting means 2 will be described. The aspherical lens 13 is a convex lens. Fig. 5 is an explanatory view of the beam angle adjusting means 2 of the present invention. In the illustrated case, the beam angle adjusting means 2 is a concave lens 2011 having a focal length f21 of 100 mm (i-th adjustment lens) ), a convex lens with a focal length f22 of 110 mm (the first) 2 adjusting the lens) and the holding means of the convex lens 2012 omitted in the figure, wherein the holding means is for holding the convex lens 2012 and positioning the convex lens 2012 at a right angle to the light, so that the concave lens 20 11 and the convex lens 20 1 2 The front side focus 〇11 is the same. Further, the central axis P of the aspherical lens 13, the central axis q of the concave lens 2011, and the central axis R of the convex lens 2012 are aligned with the designed optical axis. As shown in the figure, when the light-emitting point F deviates from the designed optical axis (the optical axis of the aspherical lens 13) ΔΑ, the parallel beam Β1 of the straight line PF which is parallel to the aspherical lens 13 and is inclined by Δ Θ1 is parallel. The virtual image of the beam Β 1 is formed at a point 〇 tl of the side focus 〇 n plane of the concave lens 2011. The point Ollk is offset from the optical axis Δκ of the aspherical lens 13. The beam B2 is incident on the convex lens 2012 with a beam diverging from the point ® 〇llk, and is emitted by a parallel beam B3 (opposite to the optical axis of the design Δ 02) parallel to the line R 〇 ilk . Therefore, by moving the central axis R of the convex lens 2012 to R below the figure, (where 'R' = Δ K)', as shown by the dotted line in the figure, the parallel beam B3 can be made parallel to the optical axis of the design (△ 02=0). Here, the moving distance Δ K required to reduce the inclination of the light beam of the transmission convex lens 2012 to within 5 seconds is given by the following formula. Δ f22 Α θ 2 (Expression 10) 11 200947139 If f22 = 11 〇mm and Δ 0 2 = 5 seconds are substituted into the equation 1 〇, Δ KS 2.7 (in m) can be obtained. That is, in order to adjust the tilt of 5 seconds, the convex lens 2012 may be moved by about 3/zm. Compared with the beam angle adjusting means 2, the aspherical lens 13 is only moved to adjust the 〇丨5# melon. Since this is 20 times the adjustment range, the tilt of the light beam can be easily made close to zero.囷6 shows a second embodiment of the beam angle adjusting means 2. Further, the focus of the aspherical lens 13 is 〇12, and the focus of the convex lens 2013 (adjusting lens) is 02' focus 〇12, 02 on the optical axis of the design. Further, the light-emitting point F is disposed between the focus 〇丨2 on the incident side and the aspherical lens 丨3. ❹ When the light-emitting point F deviates from the designed optical axis (the optical axis of the aspherical lens 13) δα as shown in the figure, the light beam B1 after transmitting the aspherical lens 13 is located on the surface of the focus 〇12 from the straight line PF. A beam of point 012k diverging is incident on the convex lens 2013' and is emitted by a parallel beam B2 parallel to the straight line Q〇2k (the angle of the optical axis relative to the design is Δ < 9 2). Here, the point where the point k2k line PF intersects the focus 02 plane deviates from the optical axis Δ κ of the aspherical lens π. Therefore, by moving the central axis Q of the convex lens 2013 by Δκ (about 3 ym) to the bottom of the figure (where 'QQ = δκ)' as shown by the dotted line in the figure, the beam Β2 and the design can be made flat. The optical axis is parallel = 〇), or △ 02 is reduced to less than 5 seconds. Fig. 7 is a view showing a third embodiment of the beam angle adjusting means 2. Further, the 'aspherical lens 13 is a convex lens. The focal lengths 2014 (first adjustment lenses) and the concave lenses 2〇15 (second adjustment lenses) have focal focal lengths f24 and f25 of ii 〇 mm and 100 mm, respectively, and the focal points 013 on the emission side thereof coincide with each other. 12 200947139 As shown in the figure, when the light-emitting point F deviates from the designed optical axis (the optical axis of the aspherical lens 13) ΔΑ, the light beam βι transmitted through the aspherical lens 13 is inclined with respect to the optical axis of the design. The parallel beam Β1 of the convex lens 2〇14 is emitted from the convex lens 2014 by the beam Β2 condensed on the surface 13k of the focus 〇13, and is parallel to the linear beam 〇1 by the concave lens 2〇15. It is emitted from the concave lens 2015. Here, the focus 〇13k is offset from the optical axis ΔΚ of the aspherical lens 13 by a point at which the line parallel to the straight line PF intersects the focal point 面13 by the point Q. Therefore, by moving the mandrel R of the concave lens 2〇15 by ΔΚΡβιη to the upper side of the figure, R (but RR, = Δ κ) ', as shown by the dotted line in the figure, the parallel beam B3 and the design can be made. The upper optical axis is parallel (Δ 0 2 = 0) ' or the △ 0 2 is reduced to less than 5 seconds. Fig. 8 is a view showing a fourth embodiment of the beam angle adjusting means 2. The aspherical lens 13 is designed/made such that when the real image of the light-emitting point F is formed at a point 014 which is 130 mm behind the light-emitting point F, the wavefront of the aspherical lens-transmitted light becomes a complete spherical surface. Further, the focal length of the concave lens 2〇16 (adjusting lens) is minus 11 〇 mm and the focus position is point 〇丨4. As shown in the figure, when the light-emitting point F deviates from the designed optical axis (the optical axis of the aspherical lens 13) ΔΑ, the light beam 81 transmitted through the aspherical lens 13 is incident on the concave lens by the light beam condensed at the point 014k. 2〇16, and emitted from the concave lens 2016 with a light beam B2 parallel to the straight line Q〇14k. Here, the point k 14k is a point at which the straight line PF intersects the focal point 014, and deviates from the optical axis ΔΚ of the aspherical lens 丨3. Therefore, by moving the central axis Q of the concave lens 2016 by ΔΚ (about 3 /zm) to Q above the figure, (where, QQ, = △ 〖), as shown by the dotted line in the figure, the parallel beam B2 and the design can be made. The upper optical axis is parallel (Δ02 = 13 200947139 〇), or A 02 is reduced to less than 5 seconds. In the first to fourth embodiments, the position of the light source is arranged in accordance with "tenth, but there is actually a manufacturing error, etc." may deviate from the optical axis; The method is explained. Hereinafter, the case of FIG. 8 will be described. Now, the fine adjustment of the parallelism of the transmitted parallel beams by the fine adjustment of the optical axis direction of the concave lenses 2〇16 (the closer the parallelism is to the plane wave), the ΔΖ is set. The larger the margin of the fine adjustment amount (the wider the adjustment range), the easier it is to adjust. When the transmitted parallel beam is a completely plane wave, the distance b of the 014 point of the aspherical lens from the concave lens 2016 is infinite. For example, when b is 30,000 or more, it is regarded as a plane wave, and Δz is satisfied as long as it satisfies Equation 11. Δ 110 - 110x30000 / (11 〇 + 30000) = 0.402 (mm) (Expression 11) From Equation 11, it can be seen that the concave lens 2 〇 16 is roughly adjusted by about 4 mm to form parallel light (planar wave). In contrast, it is only known as shown in FIG. 4! When the 〇 and aspherical lenses are taken in parallel light, the amount of fine adjustment Δζ in the optical axis direction of the aspherical lens for obtaining the above-described plane wave becomes small, and becomes extremely difficult to adjust. That is, if the focal length fAs of the aspherical lens is set to 6 mm, Δ z $ 6 - 6x30000 / (6 + 30000) = 〇 '〇〇 12 (mm), that is, 'must be measured with a precision of 1.2 m The aspherical lens is adjusted and it is difficult to form a plane wave. In the case of the above-described first to third embodiments (that is, when the aspherical lens is combined with a lens having a focal length longer than that of the aspherical lens), 200947139 is also finely adjusted to the optical axis direction by about 0.4 mm. , the emitted light can be formed into a high-precision plane wave. Further, even if the optical axes of the multi-beams incident on the long-focus lens 3 have a parallelism of about 5 seconds to each other, but if they are shifted to a direction at right angles to the optical axis, the xy of the multi-spot 80 shown in FIG. The pitch px and py of the direction are deviated. Therefore, as shown in FIG. 9, for example, the parallel glass 2023 is disposed in two directions of X and y on the light beam output side of the beam angle adjusting means 2, and the parallel glass 2023 X disposed in the X direction and the y direction are disposed. The flattening of the row glass 2023y is respectively rotated, whereby the positions of the optical axes of the multi-beams (that is, the pitches px and Py of the multi-spot 80 in the xy direction) are made uniform. Since the parallel light is incident on the parallel glass 2023 X, y, the parallelism of the transmitted light wave surface is not deteriorated by the inclination of the parallel glass 2023x, y, and only the position of the light beam can be finely adjusted without changing the tilt of the light beam (for design) The optical axis is in the direction of a right angle). Further, the parallel glass 2〇23x, y can be applied to any of the above embodiments. Fig. 10 is a view showing the configuration of another maskless exposure apparatus of the present invention. Weng W light source 1A is loaded with blue-violet semiconductor laser (405nm) LD12A. Further, the light source 1B is loaded with an ultraviolet semiconductor laser (375mn) LD12B. From the light source ΙΑ, 1B, parallel laser light having a pitch of I] mm is emitted in a direction parallel to the χ and y directions. The beam angle adjusting means 2A and 2B are multi-beams which are substantially parallel to each other by a distance of 13 mm which are emitted from the light sources 1A and 1B, and each of the above-described respective embodiments has 128 multi-beams of about 5 seconds. The parallelisms are parallel to each other. The 375 nm ultraviolet LD multi-beam system is reflected at the mirror 15 and transmitted through the 15 2009 47139 wavelength synthesizing mirror 16. On the other hand, the 405 nm blue-violet LD multi-beam is reflected by the wavelength synthesizing mirror 16 and passes through an optical path that is almost identical to the 375 nm beam. When the two-wavelength beam passes through the parallel glass unit 14 for compressing the arrangement of the multiple beams, the distance between the X directions is compressed to imm. Since the long-focus lens 3 having a caliber of about 120 mm performs color correction on the wavelengths of both 375 nm and 405 nm, the multi-beams of the two wavelengths of the long-focus lens 3 are transmitted on the polygon mirror 5 in the y direction (horizontal direction). Its main light is consistent. Since the color correction is also performed in the X direction, the beam distances arranged in the distance of 1 mm are also the focal length fL of the spherical lens system of the long focal lens 3 and the focal length of the cylindrical lens of the fourth group of the front end corrected color & The determined magnification fc/fL is such that the two wavelengths are collectively reduced to converge at the same position on the polygon mirror. The two-wavelength beam reflected by the polygon mirror 5 is transmitted through the lens 6. The pupil direction is the focal length of the lens 6, the y-direction beam diameter Dy and the wavelength of the incident light, and the point diameter dy determined by the equation 丨2. Concentrate on the substrate. On the other hand, the X direction is obtained by the focal length ίθ of the spherical system of the lens 6 and the color corrected cylindrical lens 61 after the f0 lens, and the X-direction point diameter Dx of the incident light to the long-focus lens is expressed by the formula 丨3. The diameter of the point is determined to be concentrated on the substrate. Here, dx and dy are approximately the same size. ...(式12) ❹

Dy= Λϊθ λ !{π Dy) dx= Dxfcf^ C/( fLf^ ) (Equation 13) In this way, since the beam of two wavelengths is simultaneously concentrated at the same spot with a spot diameter of 2G^m, In synchronization with the rotational speed of the polygon mirror 5, the stage 7 on which the exposure substrate 8 is loaded can be moved in the direction of the arrow in FIG. Furthermore, 16 200947139 can be synchronized with the rotational speed of the polygon mirror 5, and the LD 12 is illuminated by the controller 9 at a time point 〇n_OFF determined by the arrangement position of each LD and the required drawing information, thereby The wavelengths simultaneously expose the desired pattern to the substrate 8. In the maskless exposure apparatus of the present embodiment, the ret exposure of the h-line and the i-line of the mercury lamp used in the conventional mask exposure apparatus can be used to simultaneously perform the mask exposure, and the inexpensive photoresist used in the past can be used. exposure. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the overall configuration of a maskless exposure apparatus of the present invention. 2(a) and 2(b) are explanatory views of the light source unit 1 of Fig. 1. Fig. 3 is an arrangement diagram of a plurality of light spots irradiated onto an exposure substrate. 4(a) to 4(d) are views showing an optical path of a laser beam emitted from an LD. Fig. 5 is an explanatory view of a beam angle adjusting means of the present invention (first embodiment). Fig. 6 is an explanatory view of a beam angle adjusting means of the present invention (second embodiment). Fig. 7 is an explanatory view of a beam angle adjusting means of the present invention (third embodiment). Fig. 8 is an explanatory view of a beam angle adjusting means of the present invention (fourth embodiment). Fig. 9 is an explanatory view showing a beam position adjusting means of the present invention. Fig. 10 is a view showing the overall configuration of another maskless exposure apparatus of the present invention. 17 200947139 [Explanation of main component symbols] 1 Beam angle adjustment method 12 Laser light source (LD) 13 Plastic lens 14 Inter-axis pitch conversion device 2011 Adjustment lens 2012 Adjustment lens

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Claims (1)

200947139 VII. Patent application scope: 1. A maskless exposure device having: a plurality of laser light sources at a predetermined interval _. The inter-axis spacing conversion device is a laser that will be emitted from the laser light source. The light beams are arranged in a certain positional relationship; the polygon mirror is configured to scan the laser beam in the y direction; the multi-long focus lens is positioned such that the focus position on the exit side is located on the reflective surface of the mirror; Ο μ lens, which is to illuminate the laser beam on the substrate; the stage is loaded with the substrate and can move freely in the X direction orthogonal to the scanning direction; and the control circuit is based on the exposure pattern information Controlling (four) the rotation angle of the polygon mirror, the position of the stage, and the laser light source, wherein the plurality of laser light sources respectively have beam angle adjustment means, which comprise adjusting the radiation (four degrees) of the laser beam a shaping lens for correcting, at least adjusting the emitted light to be parallel light, j adjusting lenses, and maintaining the adjusting lens at a right angle to the optical axis of the adjusting lens The movable beam holding means is disposed between the light source and the one-pitch switching device such that the optical axis of the adjusting lens is coaxial with the optical axis of the light source And moving the adjustment lens in a direction of the optical axis & + ^ month relative to the optical axis, thereby making the optical axis of the laser source parallel to the design optical axis. 2 . 11 r The maskless exposure apparatus of claim 1, wherein the plurality of laser light sources are semiconductor lasers, and the shaping lens is disposed on the exit surface of the semiconductor laser by an aspherical lens. The laser beam emitted from the semiconductor laser is shaped into a parallel beam and incident on the adjustment lens. 3. The reticle exposure apparatus of claim 1, wherein the beam angle adjusting means comprises two adjustment lenses having positive and negative powers having the same focus position. 4. The reticle exposure apparatus of claim 3, wherein at least one of the adjustment lenses is vertically adjustable in the optical axis direction. 5. The reticle exposure apparatus of claim 2, wherein the shaping lens is an aspherical lens that forms a laser beam emitted from the semiconductor laser into a diverging beam and emits an aspherical lens; The means consists of a single adjustment with a positive power. 6. The maskless exposure apparatus of claim 2, wherein the shaping lens is an aspherical lens that forms a laser beam emitted from the semiconductor laser into a concentrated beam and emits the same; the beam angle adjusting means It is composed of one adjustment lens with negative power. Eight, the pattern: (such as the next page) 20