CN109491215A - A method of improving the DMD mask-free photolithography precision of images - Google Patents
A method of improving the DMD mask-free photolithography precision of images Download PDFInfo
- Publication number
- CN109491215A CN109491215A CN201811486749.6A CN201811486749A CN109491215A CN 109491215 A CN109491215 A CN 109491215A CN 201811486749 A CN201811486749 A CN 201811486749A CN 109491215 A CN109491215 A CN 109491215A
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- CN
- China
- Prior art keywords
- dmd
- images
- precision
- mask
- improving
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
Abstract
The invention discloses a kind of methods for improving the DMD mask-free photolithography precision of images comprising: image is directly generated using DMD, the image data of computer is exposed on wafer or pcb board；Plated film lens, along X-axis or Y-axis high speed rotation certain angle, are made DMD reflected light translate half-pixel by refraction light after the inclined eyeglass, are superimposed by the translation of four positions, single pixel develops into 4 as number by control eyeglass；The present invention improves the method for the DMD mask-free photolithography precision of images in the case where DMD physical resolution is constant, the precision of images only can be improved by optical lens, thus have the characteristics that cost performance is high, small in size, it is with very strong technology extensibility and processing compatibility, meet requirement flexibly, efficiently, inexpensive, it is more easily applied in the industry, there are extensive market prospects.
Description
Technical field
The present invention relates to a kind of DMD mask-free photolithography image problem more particularly to a kind of raising DMD mask-free photolithography images
The method of precision；Belong to semiconductor and the production equipment field of PCB.
Background technique
In traditional projection lithography, one of comparatively laborious complexity when the production of photomask used in exposure technology is processed
Process, also have higher requirement to exposure mask and photoetching process, processing cost is relatively expensive, and for improve DMD without exposure mask light
Carving for the method for precision is exactly the dmd chip for using higher resolution, higher precision, or is spliced using multiple DMD,
These methods also require to increase hardware cost.
Summary of the invention
(1) technical problems to be solved
To solve the above problems, the invention proposes a kind of methods for improving the DMD mask-free photolithography precision of images.
(2) technical solution
The method of the raising DMD mask-free photolithography precision of images of the invention, directly generates image including the use of DMD, will count
The image data of calculation machine is exposed on wafer or pcb board；Plated film lens are certain along X-axis or Y-axis high speed rotation by control eyeglass
Angle makes DMD reflected light translate half-pixel by refraction light after the inclined eyeglass, is superimposed by the translation of four positions,
Single pixel develops into 4 as number.
It further, further include that the mask-free photolithography technology based on DMD uses ultraviolet light as primary light source.
Further, further include plated film lens around X-axis or Y-axis rotational angle be θ, glass with a thickness of t, lens index
For n, thus can calculate DMD reflected light by reflecting light translation distance Δ y value after the inclined eyeglass is
It further, further include that plated film lens material is fixed, refractive index remains constant, reflects the moving distance Δ of light
Y is just determined by the thickness t of deflection angle θ and eyeglass, by selecting suitable rotation angle, θ and lens thickness t, ensures that refraction
Light translation distance Δ y is the half of DMD minimum micromirror size.
Further, after further including pixel by the translation half-pixel in three directions, single pixel point becomes A, B, C
With tetra- pixels of D, spatially resolution ratio improves 4 times, and the precision of images improves 4 times.
(3) beneficial effect
The present invention compared with prior art, has the advantages that raising DMD mask-free photolithography figure of the invention
As the method for precision, in the case where DMD physical resolution is constant, the precision of images only can be improved by optical lens, thus
Have the characteristics that cost performance is high, small in size, with very strong technology extensibility and processing compatibility, meets flexible, efficient, low
The requirement of cost, it is easier to be applied in the industry, there are extensive market prospects.
Detailed description of the invention
Fig. 1 is structure distribution schematic illustration of the invention.
Fig. 2 is DMD eyeglass refraction light translation structure schematic illustration of the invention.
Fig. 3 is 4 times of pixels translation overlaying structure schematic illustration of the invention.
Specific embodiment
A kind of method improving the DMD mask-free photolithography precision of images as shown in drawings, it is characterised in that: including the use of
DMD directly generates image, and the image data of computer is exposed on wafer or pcb board；Plated film lens are by control eyeglass along X
Axis or Y-axis high speed rotation certain angle make DMD reflected light translate half-pixel by refraction light after the inclined eyeglass, pass through
The translation superposition of four positions, single pixel develop into 4 as number；
It wherein, further include that the mask-free photolithography technology based on DMD uses ultraviolet light as primary light source；It further include mirror coating
Piece is θ around X-axis or Y-axis rotational angle, glass with a thickness of t, lens index n, thus can calculate DMD reflected light and pass through
It is Δ that light translation distance Δ y value is reflected after the inclined eyeglassIt further include plated film
Lens materials are fixed, and refractive index remains constant, reflect the moving distance Δ y of light just by the thickness t of deflection angle θ and eyeglass
It determines, by selecting suitable rotation angle, θ and lens thickness t, ensures that refraction light translation distance Δ y is DMD minimum micro mirror
The half of size；It further include after the translation half-pixel that pixel passes through three directions, single pixel point becomes A, B, C and D tetra-
A pixel, spatially resolution ratio improves 4 times, and the precision of images improves 4 times.
The method of the raising DMD mask-free photolithography precision of images of the invention, in the case where DMD physical resolution is constant,
The precision of images only can be improved by optical lens, thus have the characteristics that cost performance is high, small in size, with very strong technology
Extensibility and processing compatibility meet requirement flexibly, efficiently, inexpensive, it is easier to be applied, have extensive in the industry
Market prospects.
The above-described embodiments are merely illustrative of preferred embodiments of the present invention, not to structure of the invention
Think and range is defined.Without departing from the design concept of the invention, ordinary people in the field is to technology of the invention
The all variations and modifications that scheme is made, should all drop into protection scope of the present invention, the claimed technology contents of the present invention,
It is all described in the claims.
Claims (5)
1. a kind of method for improving the DMD mask-free photolithography precision of images, it is characterised in that: image is directly generated including the use of DMD,
The image data of computer is exposed on wafer or pcb board；Plated film lens are by control eyeglass along X-axis or Y-axis high speed rotation
Certain angle makes DMD reflected light translate half-pixel by refraction light after the inclined eyeglass, folded by the translation of four positions
Add, single pixel develops into 4 as number.
2. the method according to claim 1 for improving the DMD mask-free photolithography precision of images, it is characterised in that: further include base
Use ultraviolet light as primary light source in the mask-free photolithography technology of DMD.
3. the method according to claim 1 for improving the DMD mask-free photolithography precision of images, it is characterised in that: further include plating
Film glass is θ around X-axis or Y-axis rotational angle, thus glass can calculate DMD reflected light with a thickness of t, lens index n
It is Δ by reflecting light translation distance Δ y value after the inclined eyeglass
4. the method according to claim 1 for improving the DMD mask-free photolithography precision of images, it is characterised in that: further include plating
Film glass material is fixed, and refractive index remains constant, reflects the moving distance Δ y of light just by the thickness of deflection angle θ and eyeglass
It spends t to determine, by selecting suitable rotation angle, θ and lens thickness t, ensures that refraction light translation distance Δ y is that DMD minimum is micro-
The half of mirror size.
5. the method according to claim 1 for improving the DMD mask-free photolithography precision of images, it is characterised in that: further include picture
After the translation half-pixel that vegetarian refreshments passes through three directions, single pixel point becomes tetra- pixels of A, B, C and D, spatially differentiates
Rate improves 4 times, and the precision of images improves 4 times.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811486749.6A CN109491215A (en) | 2018-12-06 | 2018-12-06 | A method of improving the DMD mask-free photolithography precision of images |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811486749.6A CN109491215A (en) | 2018-12-06 | 2018-12-06 | A method of improving the DMD mask-free photolithography precision of images |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109491215A true CN109491215A (en) | 2019-03-19 |
Family
ID=65699293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811486749.6A Pending CN109491215A (en) | 2018-12-06 | 2018-12-06 | A method of improving the DMD mask-free photolithography precision of images |
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| CN (1) | CN109491215A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005234113A (en) * | 2004-02-18 | 2005-09-02 | Fuji Photo Film Co Ltd | Exposure apparatus |
| CN101231474A (en) * | 2008-02-27 | 2008-07-30 | 芯硕半导体（中国）有限公司 | Non-mask write through photo-etching machine with ultrahigh strength LED light source |
| CN101526743A (en) * | 2008-03-03 | 2009-09-09 | 日立比亚机械股份有限公司 | Maskless exposure device |
| CN102103332A (en) * | 2011-03-14 | 2011-06-22 | 张雯 | High-speed digital scanning direct write photoetching device |
| KR20120075038A (en) * | 2010-12-28 | 2012-07-06 | 엘지디스플레이 주식회사 | Exposure apparatus and method for aligning the same |
| CN203697483U (en) * | 2013-12-03 | 2014-07-09 | 上海普利生机电科技有限公司 | Photo-curing 3D (Three Dimensional) printer and imaging system thereof |
| CN105690754A (en) * | 2014-11-28 | 2016-06-22 | 上海普利生机电科技有限公司 | Photo-curing 3D printing method, equipment and image exposure system thereof |
-
2018
- 2018-12-06 CN CN201811486749.6A patent/CN109491215A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005234113A (en) * | 2004-02-18 | 2005-09-02 | Fuji Photo Film Co Ltd | Exposure apparatus |
| CN101231474A (en) * | 2008-02-27 | 2008-07-30 | 芯硕半导体（中国）有限公司 | Non-mask write through photo-etching machine with ultrahigh strength LED light source |
| CN101526743A (en) * | 2008-03-03 | 2009-09-09 | 日立比亚机械股份有限公司 | Maskless exposure device |
| KR20120075038A (en) * | 2010-12-28 | 2012-07-06 | 엘지디스플레이 주식회사 | Exposure apparatus and method for aligning the same |
| CN102103332A (en) * | 2011-03-14 | 2011-06-22 | 张雯 | High-speed digital scanning direct write photoetching device |
| CN203697483U (en) * | 2013-12-03 | 2014-07-09 | 上海普利生机电科技有限公司 | Photo-curing 3D (Three Dimensional) printer and imaging system thereof |
| CN105690754A (en) * | 2014-11-28 | 2016-06-22 | 上海普利生机电科技有限公司 | Photo-curing 3D printing method, equipment and image exposure system thereof |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190319 |
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| RJ01 | Rejection of invention patent application after publication |