TW200942976A - Lithographic method and apparatus - Google Patents

Lithographic method and apparatus

Info

Publication number
TW200942976A
TW200942976A TW097147852A TW97147852A TW200942976A TW 200942976 A TW200942976 A TW 200942976A TW 097147852 A TW097147852 A TW 097147852A TW 97147852 A TW97147852 A TW 97147852A TW 200942976 A TW200942976 A TW 200942976A
Authority
TW
Taiwan
Prior art keywords
patterning
exposure
scanning
substrate
exposure tool
Prior art date
Application number
TW097147852A
Other languages
English (en)
Other versions
TWI397784B (zh
Inventor
Harry Sewell
Jozef Petrus Henricus Benschop
Original Assignee
Asml Holding Nv
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Holding Nv, Asml Netherlands Bv filed Critical Asml Holding Nv
Publication of TW200942976A publication Critical patent/TW200942976A/zh
Application granted granted Critical
Publication of TWI397784B publication Critical patent/TWI397784B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097147852A 2007-12-17 2008-12-09 微影方法及裝置 TWI397784B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US606507P 2007-12-17 2007-12-17

Publications (2)

Publication Number Publication Date
TW200942976A true TW200942976A (en) 2009-10-16
TWI397784B TWI397784B (zh) 2013-06-01

Family

ID=40467536

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097147852A TWI397784B (zh) 2007-12-17 2008-12-09 微影方法及裝置

Country Status (7)

Country Link
US (1) US8339571B2 (zh)
EP (1) EP2073063B1 (zh)
JP (1) JP5225822B2 (zh)
KR (1) KR101066622B1 (zh)
CN (1) CN101464635A (zh)
SG (1) SG153748A1 (zh)
TW (1) TWI397784B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system

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SG156564A1 (en) * 2008-04-09 2009-11-26 Asml Holding Nv Lithographic apparatus and device manufacturing method
KR101069701B1 (ko) * 2009-09-30 2011-10-04 주식회사 하이닉스반도체 리셋 커런트를 줄일 수 있는 상변화 메모리 장치, 그 제조방법 및 그것의 회로
US10181474B2 (en) * 2011-09-19 2019-01-15 Texas Instruments Incorporated SRAM layout for double patterning
JP2014157190A (ja) 2013-02-14 2014-08-28 Toshiba Corp 基板収納容器及び露光装置
CN103778922A (zh) * 2014-01-25 2014-05-07 北京工业大学 紫外激光诱导相变光盘存储的一种方法
CN103809376A (zh) * 2014-02-20 2014-05-21 苏州华维纳纳米科技有限公司 一种无机相变光刻胶和基于无机相变光刻胶的光刻工艺
KR101566263B1 (ko) 2014-02-28 2015-11-05 연세대학교 산학협력단 초해상막 및 이를 이용한 리소그래피 방법
KR20150136387A (ko) 2014-05-27 2015-12-07 삼성전자주식회사 반도체 소자의 제조 방법
CN106483777B (zh) * 2015-08-31 2018-06-26 上海微电子装备（集团）股份有限公司 一种具有调焦功能的对准系统及对准方法
EP3472672A4 (en) * 2016-06-20 2020-03-04 Nikon Corporation DENSITY LINE EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM WITH DISTORTION ADAPTATION
JP6814174B2 (ja) * 2018-04-03 2021-01-13 キヤノン株式会社 露光装置、物品の製造方法、マーク形成装置及びマーク形成方法
US11104079B2 (en) * 2018-06-22 2021-08-31 3D Systems, Inc. Three-dimensional article having permanent phosphor indicia formed from sacrificial support material
JP2022507368A (ja) 2018-11-14 2022-01-18 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
CN110989301B (zh) * 2019-12-02 2023-05-12 苏州科技大学 基于干式显影和金属掺杂Sb2Te光刻胶的光刻方法
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層
JP2023535894A (ja) * 2020-07-17 2023-08-22 ラム リサーチ コーポレーション Ｓｎ（ｉｉ）前駆体からのフォトレジスト

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JPH1097738A (ja) * 1996-09-20 1998-04-14 Matsushita Electric Ind Co Ltd 光情報記録媒体の製造方法および製造装置
JP2000021031A (ja) * 1998-06-30 2000-01-21 Toshiba Corp 光記録媒体の原盤製造法
KR100815222B1 (ko) 2001-02-27 2008-03-19 에이에스엠엘 유에스, 인크. 리소그래피 장치 및 적어도 하나의 레티클 상에 형성된 적어도 두 개의 패턴으로부터의 이미지로 기판 스테이지 상의 필드를 노출시키는 방법
DE10236422A1 (de) * 2002-08-08 2004-02-26 Infineon Technologies Ag Verfahren zur Charakterisierung einer Beleuchtungsquelle in einem Belichtungsgerät
US7256873B2 (en) * 2004-01-28 2007-08-14 Asml Netherlands B.V. Enhanced lithographic resolution through double exposure
JP2005326508A (ja) * 2004-05-12 2005-11-24 Nikon Corp フォトマスク、露光方法、並びにそのフォトマスクの製造方法及び装置
WO2006045332A1 (en) * 2004-10-27 2006-05-04 Singulus Mastering B.V. Mastering process with phase-change materials
US20070018286A1 (en) * 2005-07-14 2007-01-25 Asml Netherlands B.V. Substrate, lithographic multiple exposure method, machine readable medium
KR100630766B1 (ko) * 2005-09-05 2006-10-04 삼성전자주식회사 상변화 물질을 사용한 패턴 형성 방법 및 그 재작업 방법
US8023103B2 (en) * 2006-03-03 2011-09-20 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070212649A1 (en) * 2006-03-07 2007-09-13 Asml Netherlands B.V. Method and system for enhanced lithographic patterning
JP4872423B2 (ja) * 2006-04-11 2012-02-08 ソニー株式会社 光ディスク原盤製造方法、光ディスク製造方法、光ディスク原盤製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI562183B (en) * 2010-11-13 2016-12-11 Mapper Lithography Ip Bv Aperture array element, charged particle beam generator and charged particle lithography system

Also Published As

Publication number Publication date
US20090153826A1 (en) 2009-06-18
KR101066622B1 (ko) 2011-09-21
SG153748A1 (en) 2009-07-29
CN101464635A (zh) 2009-06-24
JP5225822B2 (ja) 2013-07-03
US8339571B2 (en) 2012-12-25
EP2073063B1 (en) 2016-03-02
JP2009147334A (ja) 2009-07-02
EP2073063A1 (en) 2009-06-24
KR20090065457A (ko) 2009-06-22
TWI397784B (zh) 2013-06-01

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