EP3472672A4 - Dense line extreme ultraviolet lithography system with distortion matching - Google Patents

Dense line extreme ultraviolet lithography system with distortion matching Download PDF

Info

Publication number
EP3472672A4
EP3472672A4 EP17815964.6A EP17815964A EP3472672A4 EP 3472672 A4 EP3472672 A4 EP 3472672A4 EP 17815964 A EP17815964 A EP 17815964A EP 3472672 A4 EP3472672 A4 EP 3472672A4
Authority
EP
European Patent Office
Prior art keywords
extreme ultraviolet
lithography system
ultraviolet lithography
dense line
line extreme
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP17815964.6A
Other languages
German (de)
French (fr)
Other versions
EP3472672A1 (en
Inventor
Michael B. Binnard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/599,197 external-priority patent/US10890849B2/en
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP3472672A1 publication Critical patent/EP3472672A1/en
Publication of EP3472672A4 publication Critical patent/EP3472672A4/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
EP17815964.6A 2016-06-20 2017-06-15 Dense line extreme ultraviolet lithography system with distortion matching Pending EP3472672A4 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US201662352545P 2016-06-20 2016-06-20
US201662353245P 2016-06-22 2016-06-22
US201762504908P 2017-05-11 2017-05-11
US15/599,197 US10890849B2 (en) 2016-05-19 2017-05-18 EUV lithography system for dense line patterning
US15/599,148 US11099483B2 (en) 2016-05-19 2017-05-18 Euv lithography system for dense line patterning
PCT/US2017/037786 WO2017222919A1 (en) 2016-06-20 2017-06-15 Dense line extreme ultraviolet lithography system with distortion matching

Publications (2)

Publication Number Publication Date
EP3472672A1 EP3472672A1 (en) 2019-04-24
EP3472672A4 true EP3472672A4 (en) 2020-03-04

Family

ID=60783558

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17815964.6A Pending EP3472672A4 (en) 2016-06-20 2017-06-15 Dense line extreme ultraviolet lithography system with distortion matching

Country Status (5)

Country Link
EP (1) EP3472672A4 (en)
JP (1) JP2019518246A (en)
KR (1) KR102458400B1 (en)
CN (1) CN109690416B (en)
WO (1) WO2017222919A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114217512B (en) * 2022-01-07 2022-11-29 北京理工大学 Extreme ultraviolet photoetching projection exposure optical system

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050024610A1 (en) * 2002-06-10 2005-02-03 Nikon Corporation Exposure apparatus and stage device, and device manufacturing method
US20070013894A1 (en) * 2005-07-13 2007-01-18 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method
US20080128642A1 (en) * 2006-12-01 2008-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20150042975A1 (en) * 2010-09-28 2015-02-12 Carl Zeiss Smt Gmbh Projection exposure tool for microlithography and method for microlithographic imaging

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5739899A (en) * 1995-05-19 1998-04-14 Nikon Corporation Projection exposure apparatus correcting tilt of telecentricity
JP2000021763A (en) * 1998-06-30 2000-01-21 Canon Inc Method of exposure and aligner
JP4894899B2 (en) * 2004-08-25 2012-03-14 セイコーエプソン株式会社 Manufacturing method of fine structure
WO2006090807A1 (en) * 2005-02-25 2006-08-31 Nikon Corporation Exposure method and apparatus, and electronic device manufacturing method
US7582413B2 (en) * 2005-09-26 2009-09-01 Asml Netherlands B.V. Substrate, method of exposing a substrate, machine readable medium
US8934084B2 (en) * 2006-05-31 2015-01-13 Asml Holding N.V. System and method for printing interference patterns having a pitch in a lithography system
TWI441239B (en) * 2006-12-12 2014-06-11 Asml Netherlands Bv Lithographic device manufacturing method ,lithographic cell ,and computer program product
SG153748A1 (en) * 2007-12-17 2009-07-29 Asml Holding Nv Lithographic method and apparatus
NL1036349A1 (en) * 2007-12-28 2009-06-30 Asml Holding Nv Scanning EUV interference imaging for extremely high resolution patterning.
JP2009253209A (en) * 2008-04-10 2009-10-29 Canon Inc Exposure apparatus, and device manufacturing method
NL2004365A (en) * 2009-04-10 2010-10-12 Asml Holding Nv Method and system for increasing alignment target contrast.
US8133661B2 (en) * 2009-10-21 2012-03-13 Taiwan Semiconductor Manufacturing Company, Ltd. Superimpose photomask and method of patterning
JP2011249631A (en) * 2010-05-28 2011-12-08 Nikon Corp Exposure method, patterning method, and method for manufacturing device
JP5838594B2 (en) * 2011-05-27 2016-01-06 株式会社ニコン Double patterning optimization method and system, pattern formation method, exposure apparatus, and device manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050024610A1 (en) * 2002-06-10 2005-02-03 Nikon Corporation Exposure apparatus and stage device, and device manufacturing method
US20070013894A1 (en) * 2005-07-13 2007-01-18 Asml Netherlands B.V. Stage apparatus, lithographic apparatus and device manufacturing method
US20080128642A1 (en) * 2006-12-01 2008-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20150042975A1 (en) * 2010-09-28 2015-02-12 Carl Zeiss Smt Gmbh Projection exposure tool for microlithography and method for microlithographic imaging

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017222919A1 *

Also Published As

Publication number Publication date
CN109690416B (en) 2021-12-21
WO2017222919A1 (en) 2017-12-28
KR20190020088A (en) 2019-02-27
CN109690416A (en) 2019-04-26
KR102458400B1 (en) 2022-10-24
EP3472672A1 (en) 2019-04-24
JP2019518246A (en) 2019-06-27

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