TW200935169A - Photomask, method of manufacturing a photomask, and pattern transfer method - Google Patents

Abstract

An object of this invention is to provide a photomask, such as a gray tone mask, which is capable of suppressing occurrence of electrostatic discharge damage of a pattern during handling of the mask in use and which is capable of avoiding an influence upon a mask pattern used for device formation even upon occurrence of electrostatic discharge damage. A photomask (for example, gray tone mask) according to this invention has a transparent substrate 24 with a mask pattern formed thereon to form a desired transfer pattern on an object. The photomask has conductive patterns 11a and 11b, 11c and 11d, 12a and 12b, and 12c and 12d which are individually led out from a plurality of mask patterns 10a, 10b, and 10c electrically isolated from one another. These conductive patterns in each pair are not contacted with each other and are close to each other at a shorter distance than that between the mask patterns. For example, the conductive patterns are formed by a light semi-transmitting film or a light transmitting film.

Description

200935169 IX. Description of the Invention: Technical Field The present invention relates to a pattern transfer method for forming a transfer pattern using a photoresist on a transfer target using a mask, and a transfer method for the pattern transfer Method of reticle and method of making same. [Prior Art]

Now, in the field of liquid crystal display devices (hereinafter referred to as LCDs), thin film transistor liquid crystal display devices (Thin

The film Transistor Liquid Crystal Display (hereinafter referred to as "TFT-LCD") is rapidly commercialized in comparison with the CRT (Cathode Ray Tube), which is considered to be easy to be thin and has low power consumption. The TFT-LCD system has a TFT substrate having a structure in which TFTs are arranged in a matrix and a color filter in which a pixel pattern of red, green, and blue are arranged corresponding to each pixel, and overlaps with each other. The schematic structure of the liquid crystal phase is as follows. In the TFT-LCD, the number of manufacturing processes is increased, and even if it is only a TFT substrate, it is manufactured using 5 to 6 photomasks. In this case, it is proposed to use a multi-layered photomask having a light-shielding portion and a light-transmitting portion and a semi-transmissive portion (hereinafter referred to as gray) in Japanese Patent Laid-Open Publication No. 2005-37933 (Patent Document No.). The step mask is used to reduce the number of masks used in the manufacture of TFT substrates. Here, the amount of light transmitted by the pattern to be transferred to the object to be transferred is controlled to control the amount of the film to be transferred. The semi-transmissive portion refers to the residual 2130-10149-PF after the development of the photoresist film on the exposure which is reduced by the use of the mask; Ahddub 6 200935169 as the gray-scale mask has: exposed transparent substrate When the light transmittance of the light-transmitting portion, the light-shielding portion that forms the light-shielding film that blocks the light for exposure, and the transparent substrate that forms the light-shielding film or the semi-transmissive film on the transparent substrate are 100%, Further, the semi-transmissive portion that transmits a certain amount of light through the amount of transmitted light is further reduced. As such a gray-scale mask, a light-shielding film or a semi-transmissive film is formed under a exposure condition to form a fine pattern having a resolution limit or less, or a semi-transmissive film having a predetermined light transmittance is formed as a semi-transparent film. Light department. ❹ On the other hand, 'the reticle used in the manufacture of semiconductor devices generates a static electricity in the light-shielding pattern', and generates a potential difference between the electrically-independent patterns, which causes a problem of electrostatic breakdown due to discharge. In the invention described in Japanese Laid-Open Patent Publication No. 2003-248294 (Patent Document 2), it is known that the independent pattern is electrically connected in a false pattern. SUMMARY OF THE INVENTION A reticle for use in the above-described LCD manufacturing or the like is generally formed as a light-shielding film and/or a semi-transparent film composed of a metal such as chrome on an insulating glass substrate. Manufacturing is carried out by performing a predetermined patterning. The mask is charged due to the cleaning of the mask manufacturing process, the cleaning of the masking process, or the handling or friction during the transport process. When the electrostatic potential caused by the charging is sometimes tens of κV or is discharged between the patterns of the masks which are electrically isolated from each other, static electricity is destroyed and the pattern is broken. If the damaged pattern is transferred to the object to be transferred (LCD panel or the like), the product becomes defective. However, as described above, it is known that due to the formation of 2130-10l49-PF on the transferred body; Ahddub c 7 200935169 has a film thickness of a stepwise different resist pattern, and therefore, at a specific portion of the pattern, Selectively reducing the transmittance of the light for exposure, and forming a grayscale mask of the mask that can control the transmission of the light for exposure; as such a grayscale mask, it is known that the half-light transmission of a part of the light for transmission through the exposure For the part, a semi-transparent film is used. Fig. 7 (a) is a cross-sectional view showing a gray scale mask as a semi-transmissive portion using a semi-transmissive film having a predetermined light transmittance ' for exposure light. In other words, the gray scale mask shown in Fig. 7(a) is on the transparent substrate 24, and has a transmittance of 0% of the light shielding portion that blocks the exposure light when the gray scale mask is used, The light-transmissive portion 22 that is exposed to the surface of the transparent substrate 24 and that transmits the light for exposure, and the semi-transmissive portion 23 that has a transmittance of 10 to 80% when the light transmittance for exposure of the light-transmitting portion is 1%% . The light-shielding portion 21 shown in FIG. 7(a) is formed by a light-shielding film holder formed on the transparent substrate 24, and the semi-transmissive portion 23 is semi-transparent by light semi-transmissive formed on the transparent substrate 24. The light film 26 is composed of. Further, the pattern shape of the light shielding portion 21, the 透光 light transmitting portion 22, and the semi-light transmitting portion 23 of Fig. 7(a) shows a certain example. However, as the material of the light-shielding film 25 constituting the light-shielding portion 21, for example, Cr or a compound containing Cr as a main component is used. The mask which is patterned in this manner is easy to store electric charges in various patterns which are electrically isolated by washing, other processing, and the like. In addition, in the state of the gray scale mask, there is an advantage that the manufacturing cost of the liquid crystal panel is very favorable. In addition, when a low-cost manufacturing cost is required, the demand for large-sized mask manufacturing using multi-chamfering is increased. In such a gray-scale mask, a relatively large-area pattern that is electrically independent is formed on a plurality of substrates, and therefore, a potential difference between the patterns of 2130-100 9-PF and Ahddub 8 200935169 is likely to occur, and there is a large The tendency to increase the potential difference occurs. Therefore, the electrostatic breakdown of the pattern film becomes deep. Further, in the state of the gray scale mask for the manufacture of the TFT, there is a case where the pattern of the channel portion pattern or the like is miniaturized, and electrostatic breakdown is likely to occur. For example, as shown by the arrow D in Fig. 7(b), the discharge is eliminated by electrostatic discharge due to the discharge caused by the potential difference between the adjacent light-shielding portions 21, and the film 25 and the semi-transmissive film 26 are eliminated. portion. Unexpectedly, the electrostatic breakdown of the pattern generated in the process of use of such a gray scale mask is related to the reduction in the yield of the transferred body formed using the mask and the final product of the liquid crystal display device or the like. A major problem with poor movement. Therefore, it is an extremely important subject to suppress the occurrence of electrostatic breakdown which can cause a pattern in the processing when the gray scale mask is used. In the method of Patent Document 2 in which an electrically independent pattern is connected by a false pattern, a large-area pattern which is formed as a result of the connection and which is also electrically independent is formed, and therefore, the pattern is at a different potential. When the pattern is generated between the conductor and the conductor member, conversely, there is a risk that damage due to the damage becomes large. The present invention has been made in view of the above-described conventional circumstances; the object of the present invention is to provide a method for suppressing the occurrence of electrostatic breakdown of a pattern which can be generated in a process when a mask is used, and even if it causes electrostatic damage. (4) In the case of using a mask such as a gray scale mask which does not affect the mask pattern formed by the element, in the second aspect, it is possible to use such a mask to form a pattern-free defect on the object to be transferred and to have high precision. The pattern transfer side of the transfer pattern ' 2130-10149-PF; Ahddub 200935169 Method 0 In order to solve the above problems, the present invention has the following structure. (Construction 1) A reticle' is a reticle having a mask pattern for forming a desired transfer pattern on a transfer substrate on a transparent substrate, characterized by having a plurality of electrically isolated ones The conductive pattern drawn by the mask pattern is not in contact with each other and has a portion closer to each other than the plurality of mask patterns described above. (Structure 2) The photomask of the structure 1, wherein the mask pattern has a light-shielding portion, a light-transmitting portion, and a reduction in the amount of exposure light used for the exposure of the mask. In the semi-transmissive portion, when the exposure light is applied to the object to be transferred by the mask, the amount of exposure of the exposure light to the object to be transferred is selectively reduced by the portion, and the object to be transferred is The upper photoresist film forms a transfer pattern containing a portion of a different residual film value. The light-shielding portion is formed by at least a light-shielding portion, and the semi-transmissive portion is formed by at least a portion of the exposure light. It is formed by a semi-transparent film.构造 (Structure 3) The photomask of the structure 2, wherein the light-shielding portion of the mask pattern is formed on a transparent substrate, and has a semi-transmissive film and a light-shielding film in this order. (Structure 4) The photomask of the structure 2, wherein the light shielding portion of the mask pattern is formed on a transparent substrate, and has a light shielding film and a semi-transmissive film in this order. (Structure 5) The photomask of the structure 2, wherein the conductive pattern is composed of the same material as the semi-transmissive film forming the semi-transmissive portion. 2130-10149-PF; Ahddub 10 200935169 (Structure 6) The photomask of the structure 2 characterized in that the conductive pattern is formed by a line width which is transferred to the transfer target without exposure. Straight or curved line pattern. (The photomask described in the structure of the structure 2 is characterized in that the conductive pattern is a semi-translucent or translucent pattern. (Structure 8) The photomask described in the structure 2 is characterized in that the conductivity The patterns are respectively drawn by a plurality of mask patterns of any pair that are electrically isolated.

(Configuration 9) - A method of manufacturing a reticle comprising: a reticle having a mask pattern for forming a desired transfer pattern on a transfer target, and forming a semi-transparent on the moon-permeable substrate The mask and the mask of the light-shielding film are patterned by the photolithography method in the semi-transmissive film and the light-shielding film, respectively, to form a light-shielding portion, a light-transmitting portion, and a reduction in the mask. A method of manufacturing a mask for a process of the mask pattern comprising a light-transmitting portion of a semi-transmissive portion of a light-transmitting portion of a light-transmitting portion of a light-receiving portion at the time of use, which is characterized in that, in the case of the above-mentioned (four) The conductive pattern drawn by the plurality of mask patterns electrically isolated forms a conductive pattern that is not in contact with each other and has a portion closer to each other than the plurality of mask patterns. The structure of the photomask of the structure 9 is characterized in that the conductive pattern is composed of the same material as the semi-transmissive medium forming the semi-transmissive portion. (Structure 11) A method of manufacturing a photomask according to the tenth aspect of the present invention, characterized in that the use of the semi-transmissive film 2130-l〇i49-PF, Ahddub 11 200935169 and the aforementioned shading ray are sequentially formed on the substrate.遮 (Structure 12) - A method of manufacturing a reticle comprising: forming a mask by a mask having a mask pattern for forming a desired transfer pattern on a transfer target a light-transmitting portion and a method for manufacturing a mask for reducing the process of the mask pattern formed by the semi-transmissive portion of the semi-transmissive portion of the amount of exposure light used when the mask is used, characterized in that it comprises: a mask blank formed on the transparent substrate is patterned by using a mask blank forming the light-shielding film, and a light-shielding film pattern of the light-transmitting portion and the light-shielding portion is formed, and a semi-transparent film is formed on the entire surface including the light-shielding film pattern. The semi-transmissive film and the light-shielding film are patterned to form a transparent portion exposing the transparent substrate; and the semi-transmissive portions are respectively electrically conductive patterns drawn by a plurality of mask patterns electrically isolated Containing no mutual a conductive pattern that is in contact with and has a portion that is closer to each other than the plurality of mask patterns. (Configuration 13) - a method of manufacturing a photomask, comprising: having a pattern on the object to be transferred The mask that forms the mask pattern of the desired transfer pattern is formed by the light-shielding portion, the light-transmitting portion, and the semi-transmissive portion that reduces the amount of transmission of the exposure light used in the mask. A method of manufacturing a photomask for a process of a material pattern, comprising: forming a light-shielding film pattern of a light-shielding portion by using a mask blank sheet on which a light-shielding film is formed on a transparent substrate; Forming a semi-transmissive film on the entire surface of the light-shielding pattern, and patterning the semi-transmissive film to form a transparent portion exposing the transparent substrate; the semi-transmissive portions are electrically isolated Conductive patterns pulled out by the mask pattern, including mutually beneficial contact and having a conductivity of 2130-10149*PF more than that between the plurality of mask patterns; Ahddub 12 200935169 (Manufacturing method of the reticle according to the structure (4) structure, wherein the conductive pattern is drawn by a plurality of each of the mask patterns which are electrically isolated, respectively. 15) a pattern transfer method, ^ 1 ^ characterized by using a photomask as described in any of the items of <8> or by any of the structures 9 to & The photomask formed by the manufacturing method irradiates the exposure light to the transfer target body to form a desired transfer pattern on the transfer target body. 砰1 The photomask caused by the present invention is attached to the transparent substrate. A photomask having a mask pattern for forming a desired transfer pattern on a transfer target, having a conductive pattern respectively pulled out by a plurality of mask patterns electrically isolated, the conductive pattern being They are in contact with each other and have a portion that is closer to each other than the aforementioned plurality of mask patterns. The photomask is, for example, a binary mask (8) having a mask pattern composed of a light shielding portion and a transparent light portion on a transparent substrate. Further, as the mask, for example, a mask pattern composed of a light-shielding portion, a light-transmitting portion, and a semi-transmissive portion for reducing the amount of exposure light used for the mask when used in a mask is provided as a mask. When a mask is used to irradiate the exposure light to the object to be transferred, the amount of exposure light to the object to be transferred is selectively reduced by the portion for use on the object to be transferred. A photoresist to form a multi-layer (grayscale) mask of a desired transfer pattern containing portions of different residual film values. In such a reticle, in the presence of the aforementioned conductive pattern, it is in the electrical 2130-1014 9-PF/Ahddub 13 200935169

When a plurality of mask patterns are isolated to generate a potential difference between each other, the conductive pattern is discharged at a stage where the potential difference is small, so that a large electric charge that destroys the mask pattern is not easily stored in each mask. The pattern, therefore, can suppress the occurrence of electrostatic breakdown of the mask pattern used for the element formation. Further, any of the mask patterns is caused by a potential difference between other members or other patterns, and in the state in which the discharge is caused, the amount of electric charge discharged is not excessively large, and discharge is performed under a small impact. That is to say, the area of the pattern which is electrically independent is not excessively large, that is, the stored charge is not excessively large, and discharge can be preferentially generated at the portion of the conductive pattern. Further, in such a mask, even if it has the aforementioned conductive pattern, even if it is assumed that electrostatic discharge is caused to the pattern due to discharge, this occurs in a portion of the conductive pattern having a portion which is close to and has no contact, and therefore, The portion of the mask pattern used for the formation of the element, that is, by leaving a conductive pattern having a portion that is pulled apart by an electrically isolated splicing pattern and having a near and non-contact portion, respectively Discharge is performed at an important pattern in which the element is formed, and it is assumed that even if the pattern t is broken due to such discharge, this becomes a part of the conductive pattern' irrespective of the mask pattern formed in the element, and therefore, The article produced by using the photomask of the present invention does not adversely affect discharge damage. Further, it is expected that, when electrostatic breakdown occurs, and after the conductive pattern is broken, the electrical pattern is provided by a plurality of electrically isolated patterns to be masked. 2130-1014 9-PF; Ahddut> 200935169 The manufacturing process can be performed, for example, by forming a reticle blank of a semi-transparent film and a light-shielding film on the entire surface of the transparent substrate, and patterning each film to form a reticle In the patterning of the semi-transmissive film, the conductive pattern of the present invention is formed, and in addition to suppressing electrostatic destruction of the pattern which may occur in the process of using the mask, and even if it occurs, The electrostatic breakdown of the pattern in the mask production stage can also be effectively suppressed. Further, the 'the aforementioned conductive pattern may be formed other than the light-shielding film used for the photomask' may be formed by a transparent film or a semi-transmissive film having a semi-transmissive property for exposure light, and thus, for example, a line width The width becomes large to a certain extent 'it is not easy to transfer to the transferred body. Further, in the event that the conductive patterns are transferred to the object to be transferred, they do not contact each other, and thus the element circuit ’ manufactured is not adversely affected. In addition, for example, in the state of the gray scale mask, it can be formed by using a semi-transmissive film having conductivity in the semi-transmissive portion, and using a process for patterning the semi-transparent film, in the same process. To produce a conductive pattern formed by the above-described semi-transparent Φ optical film. Further, by using the photomask of the present invention, pattern transfer to the transfer target can be performed, and a transfer pattern having no pattern defects and high precision can be formed on the transfer target. [Embodiment] Hereinafter, the best mode for carrying out the invention will be described based on the drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view for explaining a pattern transfer method using a gray scale mask which is an embodiment of the present invention. The gray scale mask 2 〇 2130-10149-PF shown in Fig. 1 is used to form a resist pattern 33 having a film thickness different in stages on the transfer target body 30. Further, in Fig. 1, reference numerals 32A and 32B are films which are laminated on the substrate 31 and laminated on the substrate 31. The gray scale mask 20 shown in FIG. 1 is provided on the transparent substrate 24, and has a light shielding portion 21 (light transmittance: 0%) which covers the exposure light when the gray scale mask 20 is used, and exposes the transparent substrate 24 a light-shielding portion 22 that transmits light through the surface and a mask that is formed by the semi-transmissive portion 23 having a transmittance of 10 to 80% when the light transmittance for exposure of the light-transmitting portion is 1%. When the light transmittance for exposure is 20 to 60%, it is more preferable to create a degree of freedom in the condition that the resist pattern is formed on the transfer target. The semi-transmissive portion 23 shown in Fig. 1 is constituted by a semi-transmissive semi-transmissive film 26 formed on a transparent substrate 24, and the light-shielding portion 21 is formed in this order to form the semi-transmissive film 26 and to block the light. The film 25 is constructed. When the gray scale mask 20 is used, the light-shielding portion 21 does not substantially transmit the light for exposure, and the light for the exposure is reduced in the semi-transmissive portion 23'. Therefore, it is applied to the transfer body 3〇φ. The resist film (positive photoresist film) can be made to have a thicker film thickness at a portion corresponding to the light shielding portion 21 after being transferred, and a portion corresponding to the semi-light transmitting portion 23 When the film thickness is reduced, no film is present in the portion corresponding to the light transmitting portion 22 (there is no residual film generated), and the resist pattern 3 3 having a film thickness different in stages (that is, having a difference) is formed. Then, in the portion where the film of the resist pattern 33 shown in FIG. 1 is absent, for example, the films 32A and 32B of the transfer target 30 are subjected to the first etching, and the resist pattern 33 is removed by ashing or the like. In the portion where the film thickness is reduced, the second etching is performed on the film 32B of the transfer target 30, for example. By using 2130-10149-PF; Ahddub 16 200935169, a gray scale mask 20 is used as described above, and a resist pattern 33 having a film thickness different in stages is formed on the transfer target 30, and the conventional light is implemented. Cover the two-piece process to reduce the number of masks. Fig. 2 is a plan view showing a gray scale mask which is an embodiment of the present invention. L〇a, l〇b, i〇c are respectively used to fabricate a separate display device mask pattern 'herein' schematically showing a mask with 3 sides of 3 chamfers on a transparent substrate 24 . Each of the mask patterns of l〇a to l〇c includes a plurality of patterns such as TFTs and patterns 4, and the light-shielding portion, the light-transmitting portion, and the semi-transmissive portion. For example, when the gray scale mask is used, it is blocked (the transmittance is 〇%). When the light transmittance of the light-shielding portion and the light-transmitting portion of the light-emitting portion is 100%, the transmittance is reduced to 10 to 80%. More preferably, the semi-transmissive portion of about 20 to 6 % is formed on the transparent substrate 24. Next, there are conductive patterns 11a and lib, 11c and lids, 12a and 12b, 12c and 12d which are respectively pulled out by the respective mask patterns 10a, 1b, 10c which are electrically isolated. Such 〇 conductive patterns are not in contact with each other and have portions closer to each other than between the aforementioned respective mask patterns. In such a gray scale mask, in the case of being electrically isolated due to having the aforementioned conductive pattern, it is fixed in L__^.

The position difference, also in the state of causing discharge, the occurrence of power failure. In addition, the amount of charge that generates electrical discharge between the mask + or other patterns is not excessive, 2130-10149-PF/Ahddub 17 200935169 performs discharge under a small impact. For example, the size of the liquid crystal substrate is increased, and the mask pattern for manufacturing each liquid crystal panel is increased in size. Such large, electrically isolated images tend to accumulate very large charges, and when these bits are in close proximity, electrostatic damage due to electrical discharge is likely to occur. Further, in the mask pattern, a pattern is formed on the transfer target by using a mask, and a pattern of an electronic component such as a liquid crystal panel obtained at the end is formed in advance at a position where electrostatic breakdown is likely to occur. A pattern for the purpose of pattern destruction (hereinafter referred to as an ESD pattern). It is mainly formed in an electrically isolated pattern, placed in a relatively close position, rather facilitating discharge and preventing the accumulation of large charges. Such a pattern is easy to discharge even in a photomask, which causes electrostatic breakdown in the mask, and is also used as an important mask pattern for element formation, causing adverse effects thereof. Therefore, it is advantageous to arrange the above-described conductive pattern on the mask even for the ESD pattern. e that, in the reticle of the present invention, even if it is assumed that the pattern is electrostatically destroyed by discharge due to the inclusion of the aforementioned conductive pattern, this occurs in a portion of the conductive pattern having a portion which is close to and has no contact, therefore, There is no influence on the portion of the mask pattern used for the element formation. That is, it is possible to leave the important pattern formed in the element by including a conductive pattern which is respectively pulled out by a plurality of mask patterns which are electrically isolated, and has a close and non-contact portion. The discharge is performed, assuming that even if the pattern is broken due to such discharge, the portion of the conductive pattern is made irrelevant to the mask pattern formed in the element.

2130-10149-PF; Ahddub IB 200935169, therefore, the article manufactured by using the photomask of the present invention did not cause adverse effects of discharge damage. Further, there is a corner between the electrically isolated patterns, and when these bits are in the closest position between the patterns, static electricity is easily broken. Therefore, even for the patterns of these, it is advantageous to apply the conductive pattern of the present invention. Further, the corner portion is provided to be effective at the front end of the conductive pattern. The above-described conductive patterns 11a and Hb, 11c and lids 12a and 12b, 12c and I2d which are respectively pulled out by the respective mask patterns 10a, 10b, 10c are not in contact with each other and have a comparison with each other. The above-mentioned respective mask patterns are also closer to each other, but the interval (gap) of the adjacent portions is preferably about 2 to 5 mm, more preferably 3 to 4 m. The conductive patterns 11a to 11d and 2a to 1 2d can be formed by, for example, a fine line pattern of a material having high conductivity, but it is preferably not transferred onto the φ-transferred body, that is, as a transfer. The resist pattern on the body is preferably a pattern line width which does not substantially appear after development. In the state in which the conductive pattern of the present invention is composed of a light-shielding film, it is preferable to have a line width of not more than the analysis limit (for example, below) under exposure conditions. In the state in which the conductive pattern of the present month is semi-translucent or translucent to the exposure light, it is not easily transferred to the transfer target, and it is not always necessary to be below the analysis limit under exposure conditions (for example, The width of the line below m). Preferably, it is 1/ζιη~degree. Further, if it is translucent, it is obvious that the line width can be made larger. However, in the case of the above-mentioned 2130-10149-PF; Ahddub 19 200935169, the conductive pattern is transferred to the transfer target body and does not contact each other, and therefore, the component circuit manufactured does not cause an adverse effect. Further, in order to form the electroconductive pattern of the present invention by the semi-transmissive film, it has a manufacturing advantage as will be described later. However, the conductive pattern formed between the respective mask patterns may be one portion with respect to, for example, each mask pattern, but as shown in FIG. 2, even if the conductive pattern is formed in a plurality of portions, the plural number is caused. The discharge of the second can also achieve the effect of the present invention. Further, Fig. 3 is a plan view of a gray scale mask which is an embodiment of the present invention. The conductive patterns 11a and lib which are respectively pulled out by the respective mask patterns l〇a, l〇b, 1〇c, 11c and lid, 12a and 12b, 12c and 12d are formed to be closer to each other than each of the aforementioned mask patterns by being vertically offset from each other so as not to be in contact with each other. Further, in FIGS. 2 and 3, the state in which the conductive pattern drawn by each of the mask patterns is a linear line pattern is shown. However, φ is not limited thereto, and may be, for example, a curved line pattern or A dot pattern is included in one of the line patterns. In other words, in the aforementioned conductive pattern, a plurality of adjacent portions that are not in contact with each other may exist. Fig. 4 (A), (B) and (C) are cross-sectional views showing an embodiment in which the present invention is applied to a gray scale mask. In the embodiment shown in Fig. 4(A), the conductive pattern formed between the respective mask patterns is formed by a semi-transmissive film. The gray scale mask is formed on the transparent substrate 24 to form a light shielding portion 21 which is covered by the gray scale mask (light transmittance is 0%), and the transparent substrate 24 2130-10149-PF is exposed. Ahddub 20 200935169 The light transmissive portion 22 that passes through the exposure light and the exposure light (four) in the light transmitting portion become "a mask pattern in which the transmittance is reduced to iq to the semi-transmissive portion 23. The semi-transmissive portion 23 is formed of a semi-transmissive film 26 formed of a semi-transmissive film having a light semi-transmissive property formed on the transparent substrate 24, and the light-shielding portion 21 is formed in this order to form the semi-transmissive film μ and the light-shielding film in this order. Then, the conductive pattern 1K shown in Fig. 4(A) corresponds to the thin-line conductive pattern mountain (10) shown in Fig. 2, which is semi-transparent by the semi-transmissive portion 23. The light film 26 is formed. In the present embodiment, the conductive pattern can be formed by using the semi-transmissive film 26 having the same conductivity as that of the semi-transmissive portion 23, and the semi-transparent light can be formed. The process of the part is to produce a conductive pattern U formed by the semi-transmissive film 26. The conductive pattern The line width of n is such that the pattern is not transferred to the transfer target. Fig. 5 is a cross-sectional view showing the manufacturing process of the gray scale mask by the above-described embodiment of the present invention. The mask blanks of the embodiment are formed in this order: a semi-transmissive film 26 containing, for example, a conductive molybdenum telluride on the transparent substrate 24, and a light-shielding film 25 having, for example, chromium as a main component, on the transparent substrate 24 The resist is applied to form a resist film 27 (see Fig. 5(a)). The material of the light-shielding film 25 is Si, W, A1, etc. in addition to the above-mentioned material containing chromium as a main component. In the form, the transmittance of the light-shielding portion is set by the film material and the film thickness of the light-shielding film 25 and the semi-transmissive film 26. Further, the semi-transmissive film 26 has an exposure 2130 with respect to the transparent substrate 24. 10149-PF; Ahddub 21 200935169: the amount of light transmitted becomes: ～8〇%, preferably 2〇~_ the amount of transmission as a semi-transmissive film 26 in the state of the present embodiment, The ginseng has a conductive Mo compound, Cr, w, A1, etc. In addition to MqSix, the M〇化口 system also contains nitrides, oxides, oxynitrides, barrier compounds, etc. of M〇Si. Other desirable materials include oxides, nitrides, and oxidized oxides. Carbide, etc. When determining the formation of these compounds, it is possible to adjust the metal content to have electrical conductivity capable of preventing electrostatic breakdown. Further, the transmittance of the semi-transmissive portion formed on the mask is by the aforementioned semi-transparent. Abdominal: The film material and film thickness of the film are selected and set. In the present embodiment, a semi-transparent film containing a dreaming film formed by sputtering film formation is used (exposure light transmission 帛5Q) %) and a light-shielding film with a core as a main component. Using the mask blank shown in FIG. 5(a), a mask pattern composed of the light shielding portion 21, the light transmitting portion 22, and the semi-light transmitting portion 23, and conductivity formed between the respective mask patterns are produced. Pattern jj. First, a predetermined element pattern (a pattern in which a resist pattern is formed in a region corresponding to the light shielding portion and the semi-light-transmitting portion and the conductive pattern u) is formed for the resist film 27 of the mask blank. In general, electron beams or light (short-wavelength light) are often used, but in the present embodiment, laser light is used. Therefore, a positive type resist is used as the above-mentioned resist. Then, by performing development after the edge drawing, a resist pattern 27 corresponding to the light-shielding portion and the semi-transmissive portion and the region of the conductive pattern is formed (refer to Fig. 5 (b)). Then, using the above-mentioned resist 27 as (4) masking shading 2130-10149-PF; Ahddub 22 200935169 film 25, forming a light-shielding film pattern, and then etching the lower layer with the light-shielding film pattern as an etching mask The film 26, the translucent substrate 24' exposing the region of the light transmitting portion, forms a light transmitting portion. The button carving device may be either a dry type or a wet type etching. However, in the present embodiment, the wet type is used. The residual resist pattern is removed (refer to FIG. 5(c)). Next, a resist film similar to that described above was formed on the entire surface of the substrate, and the second degree was drawn. In the second degree of drawing, a predetermined pattern is drawn, and a resist pattern is formed on the light shielding portion and the light transmitting portion. The resist pattern 28 is formed on the region corresponding to the light shielding portion and the light transmitting portion by performing development after drawing (refer to Fig. 5 (d)). Then, the resist pattern 28 is used as an etching mask, and the exposed semi-transmissive portion and the light-shielding film 25 on the conductive pattern region are etched to form the semi-transmissive portion 23 and the conductive pattern ι1 (refer to FIG. 5(e) ). As the device of the surname in this state, in the present embodiment, wet etching is used. Then, the residual resist pattern is removed, and the light-shielding portion 21 having the laminated film in the order of the semi-transmissive film portion 26 and the light-shielding film 25 is completed on the transparent substrate 24, and the transparent substrate 24 is exposed to light. The portion 22 and the semi-transmissive portion 23 composed of the semi-transmissive film 26 and the gray scale mask of the conductive pattern 11 also composed of the semi-transmissive film 26 (refer to FIG. 5(f)). The gray-scale mask caused by the present embodiment is a conductive pattern which is respectively pulled out by the respective mask patterns, and includes the mutual contact with each other and the mutual contact between the respective mask patterns as compared with β. Part of the conductive pattern, and when a potential difference is generated between the plurality of mask patterns that are electrically isolated, 'discharge at a stage where the potential difference is small, 2130-1014 9-^PF/Ahddub 23 200935169 so that The large electric charge that destroys the mask pattern is not easily accumulated in each of the mask patterns, and therefore, the occurrence of electrostatic breakdown of the mask pattern used for the element formation can be suppressed. Then, even if electrostatic breakdown is caused, the portion of the conductive pattern can be stopped, and the mask pattern formed on the element is not affected. Therefore, by using the gray scale mask of this embodiment, as shown in FIG. 1, pattern transfer is performed on the to-be-transferred body 3, and no pattern defect is formed on the object to be transferred. High-precision transfer pattern (resist pattern 33). ❹

Further, according to the present embodiment, the mask blank sheet used for the mask can be provided with the semi-transmissive film 26 having the above-described conductivity on the transparent substrate 24, even in the mask manufacturing process. In addition, it is also possible to effectively suppress the occurrence of electrostatic breakdown of the pattern that can be caused. Further, the pattern shapes of the light shielding portion 21, the light transmitting portion 22, the semi-light transmitting portion 23, and the conductive pattern 11 are merely representative examples, and it is needless to say that the present invention is not limited thereto. Further, in the second embodiment shown in Fig. 4(B), the conductive film u formed between the respective mask patterns is formed by the transparent conductive film 29. That is, the gray scale mask is formed on the transparent substrate 24, and a mask pattern composed of the light shielding portion 21, the light transmitting portion 22, and the semi-light transmitting portion 23 is formed, and the conductive pattern shown in FIG. 4(B) is formed. The pattern u (corresponding to the conductive patterns 11a to 11d shown in FIG. 2) is formed by patterning the transparent conductive film 29' formed between the transparent substrate Μ and the semi-transmissive film 26. The transparent conductive film 29 is not particularly limited insofar as it has conductivity which achieves the effect by the present invention and the transmittance of exposure light becomes high, the material 2130-10149-PF; Ahddub 24 200935169. From such a viewpoint, the transparent conductive film 29 is preferably formed by, for example, a compound containing at least one π element selected from the group consisting of strontium (Sb), tin (Sn), and indium (ITO). Such a compound obtains a transmittance of exposure light having a height suitable for the present invention by selecting a suitable film thickness of the present invention, and is etched and washed for the mask production. Etc., with good patience. Preferably, antimony tin oxide or the like is specifically mentioned. The grayscale mask caused by the present embodiment is drawn by each of the mask patterns and includes a conductive pattern that is not in contact with each other and has a portion closer to each other than between the respective mask patterns. When a potential difference is generated between the plurality of mask patterns that are electrically isolated, the discharge is performed at a stage where the potential difference is small, so that the large electric charge that destroys the mask pattern is not easily accumulated in each mask pattern. Therefore, it is possible to suppress the occurrence of electrostatic breakdown of the mask pattern used for the element formation, and even if it causes electrostatic breakdown, it can be stopped at the portion of the conductive pattern ,, and for the mask pattern formed using the element, No impact. Further, in the third embodiment shown in Fig. 4(C), the conductive pattern formed between the respective mask patterns is formed by a light-shielding film such as C]r. That is, the gray scale mask is formed on the transparent substrate 24, and a mask pattern composed of the light shielding portion 21, the light transmitting portion 22, and the semi-light transmitting portion 23 is formed, and the semi-light transmitting portion 23 is formed by being transparent. The semi-transmissive film % is formed on the substrate 24, and the light-shielding portion 21 is formed by sequentially forming the light-shielding film 25 and the semi-transmissive film 26. Next, the conductivity shown in FIG. 4(c) - case n (corresponding to the conductive patterns Ua to Ud shown in FIG. 2) is formed by the above-mentioned cover 2130-10149^PF; Ahddub 25 200935169 light portion 21 The light shielding film 25 is formed. The grayscale mask caused by the present embodiment is drawn by each of the mask patterns and includes a conductive pattern that is not in contact with each other and has a portion closer to each other than between the respective mask patterns. When a potential difference is generated between the plurality of mask patterns that are electrically isolated, the discharge is performed at a stage where the potential difference is small, so that the large electric charge that destroys the mask pattern is not easily accumulated in each mask pattern. Therefore, it is possible to suppress the occurrence of electrostatic breakdown of the mask pattern used for the element formation, and, and even if it causes electrostatic breakdown, it can be stopped at the portion of the conductive pattern 'for the mask pattern formed using the element. , no impact. In the present embodiment, the conductive pattern 11 can be formed by the light-shielding film 25 having conductivity similar to that of the light-shielding portion 21, and the light-shielding film 25 can be formed on the transparent substrate 24 by, for example, initially. The mask is formed by masking the blank sheet to produce a light-shielding portion, and the conductive pattern 11 formed by the light-shielding film 25 is formed. Further, at this time, the material of the semi-transmissive film 26 is preferably electrically conductive. It is more desirable that the overall pattern (up and down direction) of the laminate be equipotential. Further, in Fig. 4(C)', the semi-transmissive film 26 is laminated on the light-shielding film 25 to form a light-shielding portion, but the layering system may be reversed. 6 is a cross-sectional view showing an embodiment in which the present invention is applied to a binary mask. In the embodiment 4 shown in Fig. 6, the binary mask is formed on the transparent substrate 24, and a mask pattern composed of the light shielding portion 21 and the light transmitting portion 22 is formed, and the light shielding portion 21 is made by, for example, 2130-100. -PF; Ahddub 26 200935169. Next, in Fig. 6, a light-shielding film containing Cr or the like as a main component is formed by patterning on the transparent substrate 29. The conductive pattern 11 is a transparent conductive film between the 24 and the light-shielding film 25, and the conductivity is, for example, less than 3 million Ω. The transparent conductive film 29 is the same as the second embodiment. State (refer to FIG. 4(B)) 'If the crucible has a conductivity which achieves the effect by the present invention and the transmittance of the exposure light becomes high, the material is not particularly

limit. The specific material is the same as that described in the second embodiment. The transparent conductive film 29 may be a semi-translucent film of conductivity, or the transmittance of light for exposure may be higher than that of the light-shielding layer 25. Such a binary mask can be fabricated by the same process as the conventional multi-level mask (gray mask). Even the binary mask caused by this embodiment is pulled out by the respective mask patterns and includes no mutual contact and has more than the aforementioned masks (4). a conductive pattern that is closely spaced from each other, and when a plurality of mask patterns 1 are electrically isolated to generate a potential difference from each other, discharge is performed at a stage where the potential difference is small, so that the mask pattern is broken. Since the electric charge is not easily accumulated in each of the mask patterns, it is possible to suppress the occurrence of electrostatic breakdown of the mask pattern used for the element formation, and then, even if it causes electrostatic breakdown, it can be stopped at the portion of the conductive pattern. The mask pattern formed on the component is used without any influence. In the above, the embodiments of the present invention will be described with reference to the drawings, but the technical scope of the present invention cannot be applied to the above embodiments. Such as 2130-i〇149-PF; Ahddub 27. 200935169 If the current industry, the scope of the technical ideas contained in the case, even if it is about these. Obviously, various variations or modifications are conceivable in the scope of the claims, and it is of course understood that the invention belongs to the technical scope of the invention. [FIG. 1 is a diagram for explaining the use of the grayscale mask of the present invention. A cross-sectional view of the pattern transfer method. A plan view of a gray scale mask according to an embodiment of the present invention.糸 is a plan view of a gray scale mask according to an embodiment of the present invention. Fig. 4 is a cross-sectional view showing the third embodiment of the present invention and the second embodiment of the present invention, in which the present invention is applied to the gray scale mask (A). 5(a) to 5(B) are cross-sectional views showing a manufacturing process of a grayscale mask made by the first embodiment of the present invention. Fig. 6 shows that the present invention is applicable to a binary mask ( Cross-sectional view of Embodiment 4 of Figure 7 (a) to Figure 7 am _ is a cross-sectional view of a mask for explaining the problem of the conventional gray-scale mask. 1 0 aj~mask pattern; 10c~ Mask pattern; [Main component symbol description] D ~ arrow; 10b ~ mask pattern; 213〇-l〇i49-PF; Ahddub 28 200935169 11~ conductive pattern; 11a' - conductive pattern lib, - conductivity Pattern; 11c, - conductive pattern lid, - conductive pattern; 12a - - conductive pattern 12b, conductive pattern; 12c - - conductive pattern 12d-, conductive pattern; 20~ gray scale mask; Shading portion; 22~ light transmitting portion; 23~ semi-transmissive portion; 24~ transparent substrate; 25~ light shielding film; 2 6~ semi-transmissive film; 27~ resist film; 28~ resist pattern; 29~ transparent conductive Film; 30~ transfer body; 31~ substrate; 32A-, film; 32B-, film; 33~ resist pattern.

2130-10149-PF; Ahddub 29

Claims (1)

200935169 X. Patent application scope: 1. A type of photomask with a mask pattern on the transparent substrate to form a desired transfer pattern on the transferred body, characterized in that it is electrically isolated A plurality of mask patterns are used to pull out the conductive patterns, the conductive patterns are not in contact with each other and have a portion closer to each other than the plurality of mask patterns. 〇2. The reticle of claim 1, wherein the mask pattern has a light-shielding portion, a light-transmitting portion, and a half of a reduction in the amount of exposure light used for the mask when used. In the light-transmitting portion, when the exposure light is applied to the object to be transferred by the mask, the amount of exposure of the light for exposure to the object to be transferred is selectively reduced by the portion, and is applied to the object to be transferred. The photoresist film forms a transfer pattern containing a portion of a different residual film value, wherein the light shielding portion is formed by at least a light shielding film, and the semi-transmissive portion is at least half of a portion of the exposure light Formed by a light transmissive film. The reticle of the second aspect of the invention, wherein the opaque portion of the mask pattern is on a transparent substrate, and has a semi-transmissive film and a light-shielding film in this order. 4. The reticle of claim 2, wherein the light shielding portion of the mask pattern is on a transparent substrate, and has a light shielding film and a semi-transmissive film in this order. 5. The reticle of claim 2, wherein the conductive pattern is composed of the same material as the semi-transmissive film forming the semi-thinning portion. 6. The reticle of claim 2, wherein the conductive pattern is formed by a line width that is transferred to the object to be transferred without exposure by exposure. Straight or curved line pattern. I. The photomask of claim 2, wherein the conductive pattern is a semi-translucent or translucent pattern. 8. The photomask of claim 2, wherein the conductive patterns are respectively drawn by a plurality of mask patterns of any pair that are electrically isolated. 9. A method of manufacturing a reticle comprising: using a mask for forming a mask pattern of a desired transfer pattern on a transfer target, using a mask forming a semi-transparent film and a light-shielding film The lenticular film is patterned by the photolithography method in the semi-transmissive film and the light-shielding film, respectively, to form a light-shielding portion, a light-transmitting portion, and a reduction in exposure for use in the mask. The process of the mask pattern composed of the light-transmitting portion of the semi-transmissive portion of the light transmission amount is characterized in that, when the patterning is performed, each of the plurality of mask patterns is electrically isolated The conductive pattern forms a conductive pattern that is not in contact with each other and has a portion that is closer to each other than the plurality of mask patterns. The method of manufacturing a reticle according to claim 9, wherein the conductive pattern is composed of the same material as the semi-transmissive film forming the semi-transmissive portion. II. The method for manufacturing a reticle according to the first aspect of the patent application, 2130-10149-PF; Ahddub 31 200935169, wherein the semi-transmissive film and the light-shielding film are formed on the transparent substrate in this order. Mask the blanks. 12. A method of manufacturing a reticle comprising: forming a mask having a mask pattern for forming a desired transfer pattern on a transfer target, forming a light shielding portion, a light transmitting portion, and reducing a mask used The process for forming the mask pattern composed of the semi-transmissive portion of the light transmittance of the exposure light during use is characterized in that: ^ 3 on the transparent substrate, the mask blank sheet forming the light shielding film is used. Patterning, forming a light-shielding film pattern of the light-transmitting portion and the light-shielding portion, forming a semi-transmissive film on the entire surface including the light-shielding pattern, and patterning the semi-transmissive film and the light-shielding film to form an exposure The process of the transparent portion of the transparent substrate; the semi-transmissive portions are respectively electrically conductive patterns drawn by a plurality of electrically isolated patterns, including no mutual contact and having a plurality of mask patterns A conductive pattern that is also closer to each other. 13. A method of manufacturing a reticle includes: a reticle having a mask pattern for forming a desired transfer pattern on a transfer target, forming a opaque portion, a light transmitting portion, and a reduction The process of the mask pattern composed of the semi-transmissive portion of the light-transmitting amount of the exposure light during the use of the mask is characterized in that: the transparent mask is formed on the transparent 4c panel. The opaque sheet is patterned, and the opaque film pattern of the light-shielding portion of the shisha is formed on the entire s. w surface of the light-shielding film pattern to form a semi-transparent film at the semi-transmissive 2130-10149-P ^;Ahddub 32 200935169 The patterning is performed to form a process for exposing the transparent portion of the transparent substrate; and the semi-transmissive portions are respectively electrically conductive patterns drawn by a plurality of electrically isolated patterns, including no mutual A conductive pattern that is in contact with and has a portion that is closer to each other than between the plurality of mask patterns. 14. The method of manufacturing a photomask according to the first aspect of the patent application, In the above, the conductive patterns are respectively pulled out by a plurality of mask patterns of any pair that are electrically isolated. </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; Descrição ° (4) (The reticle caused by the method is used to illuminate the exposure light after being transferred, and is transferred to the transfer pattern. 2130-10149-PF; Ahddub 33