JP3037038B2 - Halftone type phase shift mask blank and its manufacturing method, halftone type phase shift mask and its manufacturing method, and sputter target - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask pattern comprising a light transmitting portion and a light semi-transmitting portion, wherein the phases of the light passing through the two portions are made different so that the light passing near the boundary between them is canceled out. Material of a halftone type phase shift mask that improves the contrast at the boundary
Halftone phase shift mask blank and its manufacturing method
Method and Halftone Type Phase Shift Mask and Manufacturing Method
Method and the sputtering method used in these methods
Sputter target that can be used as target
About the.

[0002]

2. Description of the Related Art In the manufacture of semiconductor LSIs, a phase shift mask is used as one of photomasks for transferring a fine pattern. One of the phase shift masks, which is particularly suitable for transferring a single hole, dot, or isolated pattern such as a line or space, is disclosed in Japanese Patent Application Laid-Open No. 5-127361. Masks are known.

The halftone type phase shift mask described in this publication has a mask pattern formed on the surface of a transparent substrate, and a light transmitting portion for transmitting light having an intensity substantially contributing to exposure and a light transmitting portion for substantially contributing to exposure. And a light semi-transmissive portion that transmits light of an intensity that is not intensified, and the phase of light passing through the light semi-transmissive portion and the phase of light passing through the light transmissive portion are 180 °.
By shifting, the light passing near the boundary between the light transmitting portion and the light semi-transmitting portion cancels each other, so that the contrast at the boundary can be maintained well.

In this case, the light semi-transmissive film constituting the light semi-transmissive portion is composed of a single layer made of a material having a substantially uniform composition. That is, CrOx, which is deposited with a target such as chromium and a gas such as oxygen in a deposition atmosphere
It is composed of a film such as CrNx, CrOxNy, CrOxNyCz, or a film made of a material in which a pigment or dye is dispersed in a transparent inorganic or organic material (for example, spin-on-glass (SOG)).

[0005] By using the light semi-transmissive portion composed of one layer as described above, the light semi-transmissive portion can be formed of a plurality of kinds of materials of a high transmittance layer (for example, SOG) and a low transmittance layer (for example, chromium). Compared with a halftone type phase shift mask having a multi-layer structure composed of a plurality of layers, there is an advantage that the number of manufacturing steps is reduced and generation of defects is suppressed. In particular, a light semi-transmissive film using chromium such as CrOx has the advantage that the etching selectivity with a transparent substrate (glass) is higher than that of SOG and there is no need to provide an etching stop layer.

The CrOx, CrNx, CrOx Ny,
Alternatively, regarding the method of forming a light semi-transmissive film made of CrOxNyCz or the like, the above-mentioned publication discloses that chromium is used as a sputtering target, and a gas such as oxygen is put in a vapor deposition atmosphere to form a chromium oxide, A method for depositing a substance, an oxynitride, or an oxynitride carbide, that is, a method using so-called reactive sputtering is disclosed.

[0007]

However, the light semi-transmissive film made of a material in which a pigment or a dye is dispersed in SOG is electrically insulating, and the conventional method (reactive sputtering method) is used. CrOx, C formed by
A light semi-transmissive film made of rNx, CrOx Ny, CrOx Ny Cz, or the like has a property of transmitting light that does not contribute to exposure, that is, a transmittance for exposure light of 4 to 20.
Those satisfying both the requirement of% and the requirement of the light semi-transmissive portion to provide a predetermined phase difference have poor conductivity. Therefore, when the light semi-transmissive film is etched, the electrons which are injected by electron beam lithography performed on the resist to pattern the resist are charged, and there is a problem that a pattern cannot be formed accurately.

Also, there is a problem that dust is easily adsorbed in a mask manufacturing process or at the time of use, due to electrostatic charging. Therefore, in order to prevent the charging phenomenon, it is necessary to provide a conductive layer that conducts and diffuses electricity, for example, on a transparent substrate, which has a disadvantage that the number of manufacturing steps increases.

Further, when a conductive film is formed between a transparent substrate and a light semi-transmissive film, the conductive film must be transparent to short-wavelength exposure light. For example, a high-resolution pattern in recent years is required. With the shortening of the exposure light wavelength
There is also a problem that a conductive layer material that is transparent to such exposure light must be newly developed.

SUMMARY OF THE INVENTION The present invention has been made under the above-mentioned background, and is a halftone type phase shift mask blank capable of relatively easily forming a light semi-transmissive film having a simple film structure and appropriate conductivity. And a method for manufacturing a halftone phase shift mask, and a sputter target that can be used as a target for a sputtering method performed in these methods.

[0011]

Means for Solving the Problems In order to solve the above-mentioned problems, a halftone type phase shift mask blank according to the present invention includes: (1) a mask for performing fine pattern exposure, which is a transparent substrate; Mask pattern to be formed on the surface of
A light transmitting portion that transmits light having an intensity substantially contributing to exposure and a light semi-transmitting portion that transmits light having an intensity substantially not contributing to exposure, and light that has passed through the light semi-transmitting portion. And the phase of light passing through the light transmitting portion are made different from each other, so that light passing near the boundary between the light transmitting portion and the light semi-transmitting portion cancels each other, thereby increasing the contrast of the boundary portion. It is used as a material when manufacturing a halftone type phase shift mask that can be favorably held, and a light semi-transmissive film is formed on a transparent substrate, and this light semi-transmissive film is substantially exposed to light. A halftone type phase that combines the property of transmitting light of an intensity not contributing to the light, the property of shifting the phase of the exposure light by a predetermined amount, and the conductivity not to charge the electron beam at the time of drawing. Shift mask Half-tone type phase shift of manufacturing
In the mask blank , the light semi-transmissive film contains oxygen and chromium, and has a sheet resistance of 5 × 1.
0 ⁷ Ω / □ or less, and
As a halftone phase shift mask according to the present invention, (Structure 2) the halftone phase shift mask blank of Structure 1 is characterized in that the light semi-transmissive film is patterned. As a method of manufacturing a shift mask blank, (Structure 3) a mask for performing fine pattern exposure, wherein a mask pattern to be formed on the surface of a transparent substrate is
A light transmitting portion that transmits light having an intensity substantially contributing to exposure and a light semi-transmitting portion that transmits light having an intensity substantially not contributing to exposure, and light that has passed through the light semi-transmitting portion. And the phase of light passing through the light transmitting portion are made different from each other, so that light passing near the boundary between the light transmitting portion and the light semi-transmitting portion cancels each other, thereby increasing the contrast of the boundary portion. It is used as a material when manufacturing a halftone type phase shift mask that can be held well, and a light semi-transmissive film is formed on a transparent substrate, and this light semi-transmissive film is substantially A halftone type that combines the property of transmitting light with an intensity that does not contribute to exposure, the property of shifting the phase of exposure light by a predetermined amount, and the conductivity that is not charged enough during electron beam drawing. Phase shifter In the method for manufacturing a halftone type phase shift mask blank for manufacturing a mask, the step of forming the light semi-transmissive film on the transparent substrate is performed by using a target made of chromium containing oxygen and using an atmosphere substantially free of oxygen. According to a third aspect of the present invention, in the method for manufacturing a halftone phase shift mask blank of the third aspect, the target made of chromium containing oxygen is chromium. And a chromium oxide mixed at a predetermined ratio, and a target formed by mixing the target with the chromium oxide at a predetermined ratio. , Wherein the content of chromium in the mixed target is 35 to 80% by weight. According to any one of Configurations 3 to 5, (Constitution 6) In the method for manufacturing a halftone type phase shift mask blank according to any one of Configurations 3 to 5, the transmittance of the light semi-transmissive film to exposure light Is set to 4 to 20%.
(Structure 7) In the method for manufacturing a halftone type phase shift mask blank according to any one of Structures 3 to 5, wherein an atomic ratio (Cr / O) of chromium to oxygen of the light semi-transmissive film is adjusted. The method of manufacturing a halftone phase shift mask according to the present invention is characterized in that: (8) a mask for performing fine pattern exposure, Mask pattern to be formed on the surface,
A light transmitting portion that transmits light having an intensity substantially contributing to exposure and a light semi-transmitting portion that transmits light having an intensity substantially not contributing to exposure, and light that has passed through the light semi-transmitting portion. And the phase of light passing through the light transmitting portion are made different from each other, so that light passing near the boundary between the light transmitting portion and the light semi-transmitting portion cancels each other, thereby increasing the contrast of the boundary portion. A method for manufacturing a halftone phase shift mask capable of favorably holding, comprising:
7. The light transmissive portion and the light transflective portion are subjected to a patterning process for partially removing the light translucent film of the phase shift mask blank manufactured by using the method according to any one of (7) to (7) according to a predetermined pattern. A halftone phase shift mask is obtained by forming a mask pattern consisting of: A sputter target containing chromium and oxygen used when forming a film by a sputtering method, wherein the sputter target
Within the range where the chromium content of the cut is 35 to 80% by weight
Chromium and chromium oxide are mixed at a predetermined ratio in
By using the sputtering target,
Light semi-transparent formed when the light semi-transmissive film is formed
The composition ratio of chromium and oxygen in the supermembrane will be the prescribed composition ratio
This is a feature of the present invention.

[0012]

According to the first aspect of the present invention, the step of forming the light semi-transmissive film on the transparent substrate is performed by sputtering in a substantially oxygen-free atmosphere using a target made of chromium containing oxygen. By doing so, the obtained light semi-transmissive film has the property of transmitting light of an intensity that does not substantially contribute to exposure, the property of shifting the phase of exposure light by a predetermined amount, and the charge of Can produce a halftone shift mask blank having a conductivity not less than that which does not cause charging. In particular, by controlling the sheet resistance of the light semi-transmissive film so as not to exceed 5 × 10 ⁷ / □, half that combines the property of transmitting light having an intensity that does not contribute to exposure, a property of a predetermined amount shifts the phase of exposure light, and a degree or more electrically conductive charge is not charged in the electron beam lithography to Provide over down-type shift mask blank
Is what you do. Further, according to the configuration 2, the c of the above configuration 1
The light transflective film of the halftone phase shift mask blank
Patterned halftone shift phase shifter
By using a mask, there is no charge during electron beam drawing.
In addition, it is not necessary to provide a conductive film separately from the light translucent film.
It provides a new material. According to the third aspect of the present invention,
Forming the light translucent film on the transparent substrate
Using a target made of chromium containing oxygen
By sputtering in an oxygen-free atmosphere
By doing so, the resulting light translucent film
The property of transmitting light of an intensity that does not substantially contribute to exposure,
The property of shifting the phase of exposure light by a predetermined amount and electron beam writing
At the same time as the electrical conductivity is higher than the electric charge is not charged.
It became possible to be. That is, this configuration
With this, a light semi-transmissive film having appropriate conductivity can be converted into a simple film structure.
It can be formed easily and relatively easily. Ma
According to this configuration, the chromium and oxygen of the light semi-transmissive film
The atomic ratio is almost the same as the target.
Therefore, the adjustment of the amount of oxygen in the light translucent film depends on the acid in the target.
It can be performed by adjusting the amount of
Of oxygen in the film than the method of reacting oxygen in the oxygen gas
Can be controlled relatively easily
Was.

According to the fourth aspect, by using a mixed target in which chromium having conductivity and chromium oxide having light transmittance are mixed, control of conductivity and light transmittance can be performed relatively easily. Can be.

In addition, according to the constitutions 5 to 7 , it is possible to obtain a light semi-transmissive film having a light transmission function, a phase shift function, and an appropriate conductivity.

In the structure 5 , when the chromium content is less than 35%, the conductivity of the formed light semi-transmissive film becomes poor, and the conductivity of the target itself becomes poor, so that the film surface is formed well. It becomes difficult to use a DC sputtering method that can be used. RF sputtering is not preferred because the surface of the film tends to be rough. On the other hand, when the chromium content exceeds 80%, the light transmittance of the formed light semi-transmissive film becomes too small. Further, in the configuration 6, if the transmittance of the light semi-transmissive film to the exposure light is less than 4%, the canceling effect due to the phase difference is insufficient, and if it exceeds 20%, the contrast of the light semi-transmissive portion with respect to the light transmissive portion is reduced. Not enough.

Further, according to the configuration 8 , since there is no charge at the time of drawing an electron beam and there is no need to provide a conductive film separately from the light semi-transmissive film, a halftone type phase shift mask can be used relatively. Enables easy manufacture.

Further, according to the ninth aspect, it is possible to easily obtain a target in which the composition ratio of chromium and oxygen is set to a desired value, and to easily provide the target itself with conductivity. In addition, it is possible to use the film for the DC sputtering method, and furthermore, it is easy to impart conductivity to the film formed by the sputtering method using this target.

[0018]

FIG. 1 is a process explanatory view of a method for manufacturing a halftone type phase shift mask according to one embodiment of the present invention.
Hereinafter, a method of manufacturing a halftone phase shift mask according to one embodiment will be described with reference to FIG. Since the halftone type phase shift mask blank is manufactured in the manufacturing process of the halftone type phase shift mask, one embodiment thereof will be described in the description of the manufacturing method of the halftone type phase shift mask of the above one embodiment. explain.

First, 47 is placed on the transparent substrate 1 (quartz glass).
wt% chromium (Cr) and 53 wt% chromium oxide (C
r ₂ O ₃ ) and a mixed target (density 90%)
DC sputtering is performed in an r gas atmosphere, the refractive index is 2.36, and the exposure light (i-line, wavelength λ = 365 nm) has a film thickness whose phase is substantially shifted by 180 ° 13
A light translucent film 2a having a thickness of 42 angstroms is formed to obtain a phase shift mask blank (FIG. 1A).
reference). Here, the above-mentioned mixed target of chromium and chromium oxide is, for example, obtained by a solid-phase reaction method in which metal chromium (Cr) and chromium oxide (Cr ₂ O ₃ ) are pulverized, pressed, and fired several times. The target itself can have a predetermined conductivity and a predetermined light transmittance. The sputtering atmosphere in this case is an atmosphere containing substantially no oxygen, that is, an oxidizing gas (for example, O2) that reacts with chromium to substantially change the transmittance of the light semi-transmissive film 2a. , CO2, NO2, N2 O, O3
And so on). When this is performed in an atmosphere containing oxygen, the conductivity of the obtained light semi-transmissive film is significantly lower than that in the case where the film is formed in an atmosphere containing no oxygen even if the oxygen content is the same.

In this case, assuming that the phase shift amount is φ, the refractive index is n, and the wavelength of the exposure light is λ, the film thickness d is determined by the following equation (1).

D = (φ / 360) × {λ / (n−1)} (1) In equation (1), the phase shift amount φ is desirably 180 °, but practically 160 ° ° ≦ φ ≦ 200 °
Should be fine.

The film characteristics of the light translucent film 2a thus obtained were as follows.

(Cr / O) = 0.92 Sheet (surface) resistance = 7.8 × 10 ⁴ Ω / □ Light transmittance = 4.2% (at 365 nm) Next, the above-mentioned phase shift mask blank was manufactured. Light translucent film 2
a on the electron beam resist film 4a (CMS-M manufactured by Tosoh Corporation)
8) is formed to a film thickness of 6000 angstroms (FIG. 1).
(See FIG. 1B.) After a predetermined pattern is irradiated with an electron beam (electron beam drawing), development is performed to form a resist pattern 4 (see FIG. 1C). Here, during the electron beam drawing, no electric charge is accumulated in the light semi-transmissive film, so that accurate drawing was possible.

Next, wet etching is performed with cerium secondary ammonium nitrate (see FIG. 1D), and the remaining resist pattern is peeled off.
Then, a phase shift mask having a mask pattern including the light transmitting portion 3 is obtained (see FIG. 1E).

As shown in FIG. 2, when the exposure light L0 is applied to the phase shift mask, the exposure light L0
Is a light L1 that passes through the light semi-transmissive portion 2 and reaches a transfer target (not shown).
Divided into In this case, the light L passing through the light semi-transmissive portion 2
The intensity of 1 is weak light that does not substantially contribute to exposure. On the other hand, the light L2 that has passed through the light transmitting section 3 is strong light substantially contributing to exposure. Therefore, this
Pattern exposure is performed. At this time, the light passing through the boundary between the light semi-transmissive portion 2 and the light transmissive portion 3 wraps around to the other region due to the diffraction phenomenon, but the two light beams are canceled by each other because their phases are almost reversed. . As a result, the light intensity on the transfer object in the boundary region becomes almost zero.
Therefore, the boundaries are very clear and the resolution is improved.

According to the above-described embodiment, there is no charge accumulation and no static charge at the time of drawing an electron beam, and there is no need to provide a conductive film separately from the light semi-transmissive film.
A halftone phase shift mask can be manufactured relatively easily. That is, the process of forming the light semi-transmissive film is performed by performing spattattaling in an atmosphere substantially free of oxygen using a mixed target of chromium and chromium oxide, thereby forming the light semi-transmissive film itself. Since sufficient conductivity can be imparted in addition to the function required as the light semi-transmissive film, there is no need to provide a conductive film in addition to the light semi-transmissive film as in the related art. It can be manufactured in a simple process.

Here, the light transmittance, phase shift characteristics, and conductivity of the light semi-transmissive film are mainly determined by the composition ratio of chromium to oxygen and the bonding structure thereof. The coupling structure is determined by the atmosphere at the time of sputtering, other sputtering conditions, and the like. In this case, since the sputtering is performed in an atmosphere containing substantially no oxygen, the composition ratio between chromium and oxygen of the formed semi-permeable film is substantially determined by the composition ratio of the target. In one embodiment, the target is obtained by mixing chromium metal and chromium oxide. For this reason, when changing the composition ratio of chromium and oxygen of the target, a method of changing the mixing ratio of chromium and chromium oxide, and a method of changing the degree of oxidation of chromium oxide itself while keeping these mixing ratios constant. There is.

FIG. 3 and FIG. 4 are diagrams showing modified examples of the embodiment in a table.

Each of the modifications in FIG.
%, Chromium oxide 50% by weight, and by changing the degree of oxidation of chromium oxide in the target, the composition ratio of chromium to oxygen in the target is changed and the atomic ratio of chromium to oxygen in the light semi-transmissive film is changed. This is an example of each case.

In each of the modifications shown in FIG. 4, the composition ratio of chromium and oxygen in the target is changed by changing the mixture ratio of chromium and chromium oxide, and the atomic ratio of chromium and oxygen in the light semi-transmissive film is changed. This is an example of each case.

As is apparent from the above-described embodiment and each of the modifications, the sheet resistance of the light semi-transmissive film is mainly determined by the atomic ratio between chromium and oxygen. Here, the sheet resistance which is the conductivity of the light semi-transmissive film is practically 5 × 10 ⁷ Ω /.
□ The following is desirable. The reason is that if it exceeds 5 × 10 ⁷ Ω / □ , it is difficult to sufficiently conduct electrons injected by electron beam irradiation, and there is a possibility that charge accumulation (charge-up) may occur. . In order to obtain such sheet resistance, it is preferable that the atomic ratio between chromium and oxygen in the light semi-transmissive film is 0.3 or more.

The light transmittance of the light semi-transmissive film with respect to the exposure light depends on the sensitivity of the resist used in forming the pattern, but is generally about 4 to 20%.
It is desirable to be 15%. When the transmittance is less than 4%, a sufficient contrast with light passing through the light transmitting portion may not be obtained. On the other hand, when the transmittance exceeds 20%, the resist is exposed even by light passing through the light translucent film. There is a risk of doing it. The light transmittance of this light semi-transmissive film is determined by the degree of oxidation of chromium oxide in the target or the content of nitrogen, fluorine, etc. in the atmosphere gas of sputtering, and the content of nitrogen in the light semi-transmissive film is selected. You can choose by doing. From the viewpoint of the light transmittance, the atomic ratio between chromium and oxygen of the light semi-transmissive film is preferably smaller than 1.4. If it is larger than this, it is difficult to improve the light transmittance even if the nitrogen partial pressure is increased. More preferably, 1.
Desirably less than zero.

It is preferable to use a mixed target of chromium and chromium oxide as a target used for forming the light translucent film, and the chromium content in the target is 35 to 80% by weight. preferable. 3
If the amount is less than 5% by weight, it is difficult to obtain desired conductivity, and if it exceeds 80% by weight, it is difficult to obtain a desired transmittance.

Next, an example in which a light-transmitting film is formed on a transparent substrate by a conventional manufacturing method to manufacture a halftone type phase shift mask blank will be described as a comparative example.

In each of the embodiments described above, an example in which i-line (wavelength: 365 nm) is used as the exposure light is described. However, exposure light of another wavelength, for example, KrF excimer laser light (wavelength; 248 nm).

(Comparative Example 1) A light translucent film was formed on a transparent substrate using a chromium target (density: 99.9%) by sputtering in an oxygen / argon mixed gas atmosphere.

At this time, the sheet resistance of the light semi-transmissive film and the light transmittance (wavelength 3
(Value at 65 nm) was evaluated. FIG. 5 shows the evaluation results.

The film thickness in this case was calculated from the refractive index under each condition, and was set such that the phase difference was 180 ° at the i-line (wavelength 365 nm).

As is clear from FIG. 5, the phase difference is 180
When set to °, it was not possible to obtain conductivity for preventing charge-up during electron beam drawing when the light transmittance was 4% or more.

Comparative Example 2 Using a chromium target,
A film was formed by reactive sputtering using a mixed gas of oxygen, nitrogen and argon.

In this case, it is possible to obtain a transmittance of 7 to 8% at the i-line by increasing the reaction. However, the oxidation reaction proceeds preferentially. It was impossible to obtain conductivity.

[0042]

As described in detail above, the method for manufacturing a halftone type phase shift mask blank and the method for manufacturing a halftone type phase shift mask according to the present invention comprise the steps of forming a light translucent film on a transparent substrate. Is performed using a target made of chromium containing oxygen and by sputtering in an atmosphere substantially free of oxygen, thereby having a simple film configuration and an appropriate conductivity, Since it is possible to prevent electrification due to electrons or static electricity injected during electron beam irradiation, it is possible to form an accurate pattern, and to prevent the generation of defects due to dust adhering to light semi-transmission. A method of manufacturing a halftone type phase shift mask blank and a method of manufacturing a halftone type phase shift mask which can form a film relatively easily have been obtained. It is intended. Further, the sputter target according to the present invention is formed by mixing chromium and chromium oxide at a predetermined ratio and forming the composition ratio of chromium and oxygen at a predetermined composition ratio, thereby reducing the composition ratio of chromium and oxygen. A target set to a desired value can be easily obtained, and the target itself can be easily provided with conductivity. Therefore, it is possible to use the target for the DC sputtering method. It is also easy to impart conductivity to the film formed by the sputtering method.

[Brief description of the drawings]

FIG. 1 is a process explanatory view of a method for manufacturing a halftone type phase shift mask according to one embodiment of the present invention.

FIG. 2 is a diagram illustrating the operation of a halftone type phase shift mask according to one embodiment.

FIG. 3 is a diagram showing each modified example of the embodiment in a table.

FIG. 4 is a diagram showing each modified example of the embodiment in a table.

FIG. 5 is a graph showing the relationship between the oxygen partial pressure of the sputtering atmosphere and the sheet resistance and light transmittance of the formed light translucent film in the method of the comparative example.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Transparent board, 2 ... Semi-transmissive part, 2a ... Semi-transmissive film, 3
... Light transmitting portion, 4 ... resist pattern, 4a ... resist film.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-4-136854 (JP, A) JP-A-5-2259 (JP, A) JP-A-5-127361 (JP, A) JP-A-6-127 75361 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) G03F 1/00-1/16 C23C 14/34 H01L 21/027

Claims (9)

(57) [Claims] 1. A mask for performing fine pattern exposure, wherein a mask pattern formed on a surface of a transparent substrate is substantially exposed to a light transmitting portion that transmits light having an intensity contributing to exposure. A light transmissive portion that transmits light of an intensity that does not contribute to the light, and by making the phase of light passing through the light transmissive portion and the phase of light passing through the light transmissive portion different, Used as a material when manufacturing a halftone type phase shift mask in which light passing near the boundary between the light transmitting portion and the light semi-transmitting portion cancels each other to maintain good contrast at the boundary portion. Wherein a light semi-transmissive film is formed on a transparent substrate, and the light semi-transmissive film shifts the phase of the exposure light by a predetermined amount, with the property of transmitting light having an intensity that does not substantially contribute to exposure. Nature and Sagittal <br/> Oite the halftone phase shift mask blank charge to produce a halftone phase shift mask is obtained both a degree or more conductive not charged during the drawing, the light semi-transmitting A halftone phase shift mask blank, characterized in that the film contains oxygen and chromium, and the light semi-transmissive film has a sheet resistance of 5 × 10 ⁷ Ω / □ or less. 2. The halftone phase shifter according to claim 1,
Patterning of the light translucent film of the mask blank
A halftone type phase shift mask characterized by the following. 3. A mask for performing fine pattern exposure, wherein a mask pattern formed on the surface of a transparent substrate is substantially exposed to a light transmitting portion that transmits light having an intensity contributing to exposure. A light transmissive portion that transmits light of an intensity that does not contribute to the light, and by making the phase of light passing through the light transmissive portion and the phase of light passing through the light transmissive portion different, Used as a material when manufacturing a halftone type phase shift mask in which light passing near the boundary between the light transmitting portion and the light semi-transmitting portion cancels each other to maintain good contrast at the boundary portion. Wherein a light semi-transmissive film is formed on a transparent substrate, and the light semi-transmissive film shifts the phase of the exposure light by a predetermined amount, with the property of transmitting light having an intensity that does not substantially contribute to exposure. Nature and The method of manufacturing a halftone phase shift mask blank for producing a halftone phase shift mask <br/> in which charge has both a degree or more conductive not charged during the sagittal drawing, the transparent substrate Producing a halftone type phase shift mask blank, wherein the step of forming the light semi-transmissive film thereon is performed by sputtering in a substantially oxygen-free atmosphere using a target made of chromium containing oxygen. Method. 4. A method of manufacturing a halftone phase shift mask blank of claim 3, the target of chrome containing the oxygen is mixed target formed by mixing a chromium and chromium oxide at a predetermined ratio A method for producing a halftone type phase shift mask blank, characterized in that: 5. A method of manufacturing a halftone phase shift mask blank of claim 4, halftone phase shift amount of chromium in the mixed target is characterized in that 35 to 80 wt% Manufacturing method of mask blank. 6. A method of manufacturing a halftone phase shift mask blank according to any one of claims 3 to 5, the transmittance for exposure light of the light semi-transmissive film, 4-20%
A method for manufacturing a halftone type phase shift mask blank. 7. Ha according to any one of claims 3 to 6
In the method for manufacturing a halftone type phase shift mask blank , the atomic ratio (Cr / O) of chromium to oxygen of the light semi-transmissive film is provided.
Is set to 0.3 or more. 8. A mask for performing fine pattern exposure, wherein a mask pattern formed on a surface of a transparent substrate is substantially exposed to a light transmitting portion that transmits light having an intensity contributing to exposure. A light transmissive portion that transmits light of an intensity that does not contribute to the light, and by making the phase of light passing through the light transmissive portion and the phase of light passing through the light transmissive portion different, a method of manufacturing a halftone phase shift mask light which has passed through the boundary vicinity and to maintaining good contrast boundary as cancel each other between the light transmitting portion and a light semi-transmitting portion, wherein the semi-transmission film of the phase shift mask blank produced using the method according to any one of claim 3 to 7, by performing the patterning process of removing part according to a predetermined pattern, light transmission Method for producing a halftone phase shift mask, characterized in that to obtain a halftone phase shift mask to form a mask pattern consisting of a light semi-transmitting portion and. 9. A sputter target containing chromium and oxygen for use in forming a light translucent film of a halftone phase shift mask by a sputtering method, wherein the sputter target
Range in which the chromium content of the get is 35 to 80% by weight
Chromium and chromium oxide are mixed at a predetermined ratio
By using the sputtering target,
Light half formed when the light semi-transmissive film is formed by the
The composition ratio of chromium and oxygen in the permeable membrane becomes the prescribed composition ratio
Sputter target, characterized in that the the like.