TW200933587A - Scanning signal line driving circuit and display device - Google Patents

Scanning signal line driving circuit and display device

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Publication number
TW200933587A
TW200933587A TW097140197A TW97140197A TW200933587A TW 200933587 A TW200933587 A TW 200933587A TW 097140197 A TW097140197 A TW 097140197A TW 97140197 A TW97140197 A TW 97140197A TW 200933587 A TW200933587 A TW 200933587A
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Taiwan
Prior art keywords
shift
flip
pull
pulse
shift register
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TW097140197A
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Chinese (zh)
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TWI398847B (en
Inventor
Toshio Watanabe
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Sharp Kk
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Publication of TWI398847B publication Critical patent/TWI398847B/en

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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0233Improving the luminance or brightness uniformity across the screen
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/06Handling electromagnetic interferences [EMI], covering emitted as well as received electromagnetic radiation

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Liquid Crystal (AREA)

Abstract

It is possible to realize a scan signal line drive circuit having a high resistance against a noise which fluctuates the level to the High side and hardly causing a display trouble. A gate driver (4) to be arranged on a TFT liquid crystal panel includes a shift register (10d) to which a D-FF (11) is cascade-connected. A signal is outputted from a data output terminal (Q) of the D-FF (11). Here, the data output terminal (Q) of the D-FF (11) is connected to a pull-down resistor (Rd). Accordingly, even if a noise fluctuating the level to the High side is received, it is possible to prevent the level fluctuation of the signal from the data output terminal of the D-FF. This prevents generation of a display trouble caused by a noise which turns ON a gate line which does not perform display.

Description

200933587 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種將掃描信號賦予至顯示畫面之掃描信 號線之掃描信號線驅動電路、及使用該掃描信號線驅動電 路之顯示裝置。 • 【先前技術】 . 近年來,大量的電子機器或電氣機器、無線機器等之電 磁波產生源變得存在於身旁附近。來自該等電磁波產生源 © 之電磁波有可能會對周圍之電磁環境產生各種影響,又, 作為電磁波產生源之電子機器等自身亦有可能受到來自其 他電磁波產生源之電磁波的影響。因此,對於電子機器等 而言,必需使電磁波不會釋放至機器之外部,且必需具有 對於周圍之電磁環境之耐受性。 業已制定相對於此種電子機器等之電磁波的評估規格, 尤其是作為模擬靜電放電之規格,有IEC61〇〇〇_4_2。而 @ 且,與IEC6100(M-2規格相對應之試驗係藉由稱作 ESD(Electr〇static discharge,靜電放電)搶之脈衝產生裝置 而進行。針對液晶顯示器等之顯示裝置,如上所述亦藉由 ESD搶而模擬靜電放電並進行試驗,從而確認對顯示有無 影響。 、 又亦已^出一種提咼對於電子機器等之電磁波之耐受 性的技術(例如’專利文獻丨)。 圖12係表示專利文獻1中所揭示之半導體晶片91之構 成。於半導體晶片91之外周部設置有複數個周緣部墊92, I35476.doc 200933587 且藉由導線93而連接於外部。 I進而,於半導體晶片91之上 述周緣墊92以外之晶片面上, A卸上以直線狀且格子狀地均—設 置有複數個中央部墊94。上沭φ μ & 上述中央部墊94彼此之間係藉由 導線95而連續地打線接合連接著。 藉由設為上述構成,可使因 琛冤阻而產生之電壓降減 小,減小配線之電位梯唐,抑& „ 秭度 <而可防止因電源雜訊而引起 之誤動作等。 [專利文獻1]BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a scanning signal line driving circuit for applying a scanning signal to a scanning signal line of a display screen, and a display device using the scanning signal line driving circuit. • [Prior Art] In recent years, a large number of electromagnetic wave generating sources such as electronic equipment, electric machines, and wireless devices have been around the side. Electromagnetic waves from these electromagnetic wave generating sources may have various effects on the surrounding electromagnetic environment, and electronic devices that are sources of electromagnetic waves may themselves be affected by electromagnetic waves from other electromagnetic wave generating sources. Therefore, for an electronic device or the like, it is necessary to prevent electromagnetic waves from being released to the outside of the machine, and it is necessary to have resistance to the surrounding electromagnetic environment. The evaluation specifications of electromagnetic waves with respect to such electronic devices and the like have been established, and in particular, as a specification for analog electrostatic discharge, there is IEC 61〇〇〇_4_2. On the other hand, the test corresponding to the IEC6100 (M-2 specification is performed by a pulse generation device called ESD (Electr〇 static discharge). For the display device such as a liquid crystal display, as described above, By electrostatically simulating and testing the ESD, it is confirmed that there is no influence on the display. Further, a technique for improving the resistance to electromagnetic waves such as electronic equipment has been developed (for example, 'Patent Document 丨). The structure of the semiconductor wafer 91 disclosed in Patent Document 1 is shown. A plurality of peripheral portion pads 92, I35476.doc 200933587, are provided on the outer peripheral portion of the semiconductor wafer 91, and are connected to the outside by wires 93. Further, in the semiconductor On the wafer surface other than the peripheral pad 92 of the wafer 91, a plurality of central portion pads 94 are provided in a linear and lattice-like manner. A top φ μ & The wire 95 is continuously connected by wire bonding. With the above configuration, the voltage drop due to the resistance can be reduced, and the potential of the wiring can be reduced, and the temperature can be reduced. Lt; can prevent malfunction due to power supply noise, etc. [Patent Document 1]

曰本公開專利公報「日本專利桩 个寻〜将開2005-85829號公報 (公開日:2005年3月31曰)」 【發明内容】 然而’上述先前之構成中,冑然對於使位準變動至l〇w 側之雜訊之而f受性稍有提高,但當接收到使位準變動至 High側之雜訊時,會產生容易發生誤動作之問題。尤其於 TFT (Thin FUm Transistor ’薄臈電晶體)液晶面板等之顯 示裝置中,當藉由使位準變動至High側之雜訊而無意識地 使閘極線導通時,有可能會出現如產生橫亮線之顯示異 常。以下’將具體地進行說明。 圖13係表示先前之代表性TFT液晶面板1〇1之構造的概 略圖。TFT液晶面板1〇1具備玻璃基板1〇2、源極驅動器1〇3 及閘極驅動器104。玻璃基板1〇2上形成有TFT 107, TFT107之汲極上連接有於像素電極間夾持液晶而成之像素 108。又,丁?1'107之源極上連接有源極線1〇5,該源極線 105與源極驅動器1〇3之驅動輸出相連。TFT1〇7之閘極上連 135476.doc 200933587 接有間極線106 ’該閘極線1〇6與閘極驅動器ι〇4之驅動輸 出相連。 TFT107藉由將閘極線1〇6之信號賦予至閘極而導通,將 源極線105之信號賦予至像素1〇8。已賦予至像素ι〇8之信 . 號作為與對向電極1〇9間之間的電壓而積蓄於像素1〇8中, 藉由該電壓而確定像素1〇8内之液晶之透過位準,從而進 ' 行顯示。 圖14係表示閘極驅動器丨〇4之構造之電路圖。閘極驅動 © 器1〇4具備移位暫存器11〇、位準偏移器電路ιΐ2、輸出緩 衝器113及輸出端子114。移位暫存器11〇由7個1)汴17(〇正 反器)U1構成,來自D-FF⑴之各輸出Q1〜Q7之信號輸入 至位準偏移器電路112令,且信號位準經轉換。來自位準 偏移器電路112之信號經由輸出緩衝器112而自輸出端子 113輸出至閘極線。 移位暫存器11 〇中,各D_FF丨丨丨藉由動作時脈clk而動 • 作,將自輸入IN所輸入之信號以動作時脈cLK之時序而依 序向Q1至Q7輸出。閘極驅動器1 〇4係以一個輸出與一條閘 極線106相對應之方式而安裝,為了進行TFT液晶面板ι〇ι 之顯示’依序對閘極線1〇6進行驅動。 移位暫存器110之輸出Q1至Q7通常為low,以表示顯示 開始之時序而將High脈衝輸入至輸入…中,依序使拓帥脈 衝移位。於移位暫存器110中經移位之High脈衝依序使閘 極線106變為High,並將TFT107導通,藉此進行晝面顯 示。 135476.doc 200933587 此處,如閘極驅動器104般之半導體積體電路係自位於 其周邊之電源端子塾供給有t源、。由⑨最近之製程之微細 化或晶片尺寸增加之傾向,如專利文獻丨之背景技術所 述’相對於自1:源端+塾至晶片β之主動區域之電源配線 的電阻增大至無法忽視之程度,&而成為由電源雜訊引起 誤動作之原因。上述線電阻之影響不僅涉及電源,而且 同樣涉及信號配線。曰 公开 公开 日本 日本 日本 日本 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 2005 The noise to the l〇w side is slightly improved, but when the noise is changed to the high side, a problem that the malfunction is likely to occur is generated. In particular, in a display device such as a TFT (Thin FUm Transistor) liquid crystal panel, when the gate line is unintentionally turned on by causing the level to be changed to the noise on the High side, there is a possibility that the gate line may be generated. The display of the horizontal line is abnormal. The following 'will be explained in detail. Fig. 13 is a schematic view showing the configuration of a conventional representative TFT liquid crystal panel 101. The TFT liquid crystal panel 1〇1 includes a glass substrate 1〇2, a source driver 1〇3, and a gate driver 104. A TFT 107 is formed on the glass substrate 1〇2, and a pixel 108 in which liquid crystal is sandwiched between the pixel electrodes is connected to the drain of the TFT 107. Also, Ding? A source line 1〇5 is connected to the source of 1'107, and the source line 105 is connected to the driving output of the source driver 1〇3. The gate of TFT1〇7 is connected to 135476.doc 200933587. The interpole line 106' is connected to the driving output of the gate driver ι4. The TFT 107 is turned on by applying a signal of the gate line 1〇6 to the gate, and a signal of the source line 105 is applied to the pixel 1〇8. The signal that has been given to the pixel ι8 is accumulated in the pixel 1〇8 as a voltage between the counter electrode 1〇9, and the transmittance level of the liquid crystal in the pixel 1〇8 is determined by the voltage. And thus enter the line display. Fig. 14 is a circuit diagram showing the configuration of the gate driver 丨〇4. The gate drive © 〇4 has a shift register 11A, a level shifter circuit ι2, an output buffer 113, and an output terminal 114. The shift register 11 is composed of seven 1) 汴 17 (〇 flip-flops) U1, and signals from the outputs Q1 to Q7 of the D-FF (1) are input to the level shifter circuit 112, and the signal level is Converted. The signal from the level shifter circuit 112 is output from the output terminal 113 to the gate line via the output buffer 112. In the shift register 11 各, each D_FF 动 is operated by the operation clock clk, and the signals input from the input IN are sequentially output to Q1 to Q7 at the timing of the operation clock cLK. The gate driver 1 〇 4 is mounted such that one output corresponds to one gate line 106, and the gate line 1 〇 6 is sequentially driven for the display of the TFT liquid crystal panel ι 〇. The outputs Q1 to Q7 of the shift register 110 are normally low, and the high pulse is input to the input ... to indicate the start timing of the display, and the extension pulse is sequentially shifted. The shifted High pulse in the shift register 110 sequentially turns the gate line 106 to High, and turns on the TFT 107, thereby performing a facet display. 135476.doc 200933587 Here, the semiconductor integrated circuit like the gate driver 104 is supplied with a source of t from a power supply terminal 位于 located at the periphery thereof. The tendency of miniaturization or wafer size increase by 9 recent processes, as described in the background art of the patent document, increases the resistance of the power supply wiring from the source region + the source to the active region of the wafer β until it cannot be ignored. The degree, & is the cause of malfunction caused by power noise. The above-mentioned line resistance affects not only the power supply but also the signal wiring.

具體而言,當對圖13所示之TFT液晶面板1〇1,進行背 景技術中所揭示之模擬靜電放電之試驗時,有時會產生於 顯不晝面上出現橫亮線之異常。對顯示異常之原因進行分 析後發現,於閘極驅動器104中,在D_FF111之輸出與輸出 緩衝器113之輸入側,由於使位準變動至mgh側之雜訊而 引起位準變動,從而無意識地使閘極線1〇6導通,因此顯 示t會產生橫亮線。 如此,#移位暫存器110之各輸出之位準ϋ由雜訊而變 動至High側,除了輸出High脈衝之原本之時序以外,閘極 驅動器104之輸出成為High狀態時,導致原本不進行^示 之閘極線106導通’從而產生顯示異常。 ,、 又,當移位暫存器110之一部分之D_FF1U之輸出藉由雜 訊而成為High狀態,而下一段之D_FFU1之輸入讀入該 High位準時,於移位暫存器11〇中,除了正常移位°之出二 脈衝之外,因雜訊而產生之High脈衝亦會發生移位,從§而 連續地引起顯示異常。 如此,對於使位準變動至High側之雜訊,如專利文獻 135476.doc 200933587 所揭示之構成般’無法藉由降低配線電阻之電壓降來提高 雜訊耐受性。 本發明係黎於上述問題而完成者,其目的在於實現一種 對於使位準變動至出叻側之雜訊之耐受性較高,且不易產 生顯示異常之掃描信號線驅動電路及顯示裝置。 ⑩ ❹ 為了解决上述問題,本發明之掃描信號線驅動電路具備 串級連接有M(M為2以上之整數)個正反器之第丨移位暫存 器’該第1移位暫存器將自外部輸入之輸入信號與時脈信 號同步地依序傳送至後段之正反器,自各正反器之資料輸 出端子輸出第!移位脈衝,藉此對顯示晝面之掃描信號線 進行驅動,其特徵在於:下拉電阻連接於上述正反器中之 至少一個正反器之資料輸出端子。 根據上述構成,第、移位暫存器之M個正反器係藉由依 序傳送輸入信號,而輸出用以對掃描信號線進行驅動之第 1移位脈衝。此處,下拉電阻係連接於至少一個正反器之 資料輸出端子’且當自外部接收到使位準變動至High側之 雜訊時,下拉電阻發揮作用以抵消第!移位 之位準變動。藉此,可防止產4^ § 防止產生由於以無意識之時序,第 1移位脈衝成為High而使原本不進 引起的顯示異常。因此,可實現極線導通所 實現如下述之掃描信 電路之效果,即,該掃描片味姑 玩踝驅勖 線驅動電路對於使位準變動 至琴側之雜訊之财受性較高,且不易產生顯示異常。 本發明之掃描信號線_電路t,較好的 連接有Μ個正反器之第2移位智 /、備串級 位暫存器與Μ個邏輯電路,該第 J35476.doc 200933587 2移位暫存器將域輸人信狀反轉錢與 同步地依序傳送至後段之正反器,並自 出私子輸出第2移位脈衝’上拉電阻連接於上述第2移位暫 存器之正反器中之至少__個正反器之資料輸出端子,上述 邏輯電路分別將來自上述第位暫存器之第n(n為⑴上 Μ以下之整數)段之正反器之第旧位脈衝、與來自上述^ 隸暫存器之第Ν段之正反器之第2移位脈衝之反轉脈衝的Specifically, when the test for the simulated electrostatic discharge disclosed in the background art is performed on the TFT liquid crystal panel 1〇1 shown in Fig. 13, an abnormality of the horizontal bright line may occur on the display surface. When the cause of the display abnormality is analyzed, it is found that the gate driver 104 is inadvertently caused by the level change caused by the noise of the level shift to the mgh side on the input side of the D_FF 111 and the input buffer 113. The gate line 1〇6 is turned on, so the display t produces a horizontal bright line. In this way, the level of each output of the #shift register 110 is changed to the high side by the noise, and the output of the gate driver 104 is in the High state except when the original timing of the High pulse is output, which causes the original not to be performed. ^ The gate line 106 is turned "on" to cause a display abnormality. And, when the output of D_FF1U of one part of the shift register 110 is in a High state by noise, and the input of D_FFU1 of the next stage is read into the High level, in the shift register 11? In addition to the two pulses of the normal shift, the High pulse generated by the noise also shifts, causing the display to be abnormal continuously from §. Thus, the noise that causes the level to shift to the High side, as disclosed in the patent document 135476.doc 200933587, cannot improve the noise tolerance by reducing the voltage drop of the wiring resistance. The present invention has been made in view of the above problems, and an object thereof is to realize a scanning signal line drive circuit and a display device which are highly resistant to noise which causes the level to shift to the exit side and which are less likely to cause display abnormality. 10 ❹ In order to solve the above problem, the scanning signal line drive circuit of the present invention includes a second shift register in which M (M is an integer of 2 or more) flip-flops are connected in series. The first shift register The input signal from the external input is sequentially transmitted to the forward and reverse inverters in synchronization with the clock signal, and the output is output from the data output terminals of the respective flip-flops! The shift pulse is used to drive the scanning signal line of the display surface, wherein the pull-down resistor is connected to the data output terminal of at least one of the flip-flops. According to the above configuration, the M flip-flops of the first shift register sequentially output the input signal to sequentially output the first shift pulse for driving the scanning signal line. Here, the pull-down resistor is connected to the data output terminal ' of at least one of the flip-flops, and when the noise that causes the level to shift to the High side is received from the outside, the pull-down resistor functions to cancel the first! The level of shifting changes. As a result, it is possible to prevent the display from being abnormal due to the unintended timing, the first shift pulse being High and the display being abnormal. Therefore, the effect of the scan line circuit as described below can be realized by the pole line conduction, that is, the scanning chip drive circuit drives the circuit to increase the level of noise to the side of the piano. It is not easy to produce display abnormalities. The scanning signal line_circuit t of the present invention is preferably connected to the second shifting of the flip-flops, the serial-level bit register and the logic circuit, and the J35476.doc 200933587 2 shift The register transmits the domain input signal inversion and the synchronously to the flip-flop in the subsequent stage, and outputs the second shift pulse from the private output. The pull-up resistor is connected to the second shift register. At least __ of the flip-flops of the data output terminal of the flip-flop, the logic circuit respectively receives the nth (n is an integer of (1) upper than the integer) of the first register from the first register The old bit pulse, and the inverted pulse of the second shift pulse from the flip-flop of the second stage of the above-mentioned register

邏輯和’作為第3移位脈衝而輸出,藉由該第3移位脈衝而 對上述掃描信號線進行驅動。 根據上述構成,除了糾移位暫存器外,進而設置有第2 移位暫存H 〇構成第2移位暫存器之正反器係與第1移位暫 存器相反地依序傳送輸入信號之反轉信Ε,並冑出第⑶ 位脈衝。此處,上拉電阻連接於第2移位暫存器之至少一 個正反器之資料輸出端子,當自外部接收到使位準變動至 Low側之雜訊之情形時,上拉電阻發揮作用以抵消第2移 位脈衝向Low側之位準變動。 進而,邏輯電路取得來自第丨移位暫存器及第2移位暫存 器申之同一段之正反器的第丨移位脈衝及第2移位脈衝之反 轉脈衝的,並將該邏輯和作為第3移位脈衝而輸出,對掃 描信號線進行驅動。藉此,即便由於使位準變動至Low側 之雜訊,第1移位暫存器之移位中斷且使第1移位脈衝消 失第2移位脈衝之反轉脈衝亦能作為第3移位脈衝而輸 出。此處’第2移位脈衝係藉由使輸入信號之反轉信號移 位而輸出,因此,第2移位脈衝之反轉脈衝之波形與正常 135476.doc 200933587 移位時之第1移位脈衝的波形相同。因此,即便當自外部 接收到使位準變動至Low側之雜訊而使第!移位脈衝消失 時,/、要第2移位脈衝不消失,則第3移位脈衝之波形與正 常移位時之第1移位脈衝之波形相同。 如上所述,由於第2移位脈衝相對於使位準變動至L〇w 側之雜訊不易發生位準變動,故而第3移位脈衝不僅相對 . 於使位準變動至High側之雜訊不易發生位準變動,而且相 對於使位準變動至Low側之雜訊亦不易發生位準變動。因 此,可實現對於使位準變動至High側之雜訊及使位準變動 至Low側之雜訊之雙方耐受性均較高的掃描信號線驅動電 路0 為了解决上述問題,本發明之掃描信號線驅動電路具備 串級連接有M(M為2以上之整數)個正反器之第丨移位暫存 器該第1移位暫存器將自外部輸入之輸入信號與時脈信 號同步地依序傳送至後段之正反器,並自各正反器之資料 〇 冑出端子輸出第1移位脈衝’藉此對顯示晝面之掃描信號 線進行驅動,其特徵在於·· 上述正反器中之至少一個正反器具備構成該正反器之資 .料輸入端子之第!傳輸閘極、第!反相器、第2傳輸間極、 •第2反相器及構成資料輸出端子之第1緩衝電路,上述資料 輸入端子、第1傳輸閘極、第i反相器、第2傳輸閑極、第2 反相器及第m衝電路依此順序連接,於上述第以相器與 上述第2傳輸閘極之間的第丨連接點處設置有第丨上拉電 阻’於上述第2反相n與上述第i緩衝電路之間的第2連接 I35476.doc 200933587 點處設置有第1下拉電阻。 根據述構成,第i移位暫存器之M個正反器依序傳送 ^ 號藉此輸出用以驅動掃描信號線之第1移位脈 S此處’於至少—個正反器中,於第1反相器與第2傳輸 閑極之間的第1連接點處設置約上拉電阻,於第2反相器The logical sum is output as the third shift pulse, and the scanning signal line is driven by the third shift pulse. According to the above configuration, in addition to the correction shift register, the second shift register H is further provided, and the flip-flop system constituting the second shift register is sequentially transferred in reverse to the first shift register. The inverted signal of the input signal is output and the (3)th pulse is extracted. Here, the pull-up resistor is connected to the data output terminal of at least one of the flip-flops of the second shift register, and the pull-up resistor functions when the external level is changed to the noise of the Low side. The level shift of the second shift pulse to the Low side is cancelled. Further, the logic circuit acquires the inversion pulse of the second shift pulse and the second shift pulse from the flip-flops of the second stage of the second shift register and the second shift register, and the The logical sum is output as the third shift pulse, and the scanning signal line is driven. Therefore, even if the level shifts to the noise on the Low side, the shift of the first shift register is interrupted, and the first shift pulse disappears. The inverted pulse of the second shift pulse can also be used as the third shift. The bit pulse is output. Here, the 'second shift pulse is output by shifting the inverted signal of the input signal. Therefore, the waveform of the inverted pulse of the second shift pulse is shifted to the first shift when the normal shift is 135476.doc 200933587 The waveform of the pulse is the same. Therefore, even when the noise is received from the outside to change the level to the Low side, the first! When the shift pulse disappears, and the second shift pulse does not disappear, the waveform of the third shift pulse is the same as the waveform of the first shift pulse when it is normally shifted. As described above, since the second shift pulse is less likely to cause level fluctuation with respect to the noise that causes the level to shift to the L〇w side, the third shift pulse is not only opposite to the level shifting to the high side noise. Level fluctuations are less likely to occur, and level fluctuations are less likely to occur with respect to noise that causes the level to shift to the Low side. Therefore, it is possible to realize the scanning signal line driving circuit 0 which is highly resistant to both the noise which changes the level to the High side and the noise which changes the level to the Low side. In order to solve the above problem, the scanning of the present invention The signal line driving circuit has a second shift register in which M (M is an integer of 2 or more) flip-flops are connected in series, and the first shift register synchronizes the input signal from the external input with the clock signal. The ground is sequentially transmitted to the flip-flops of the rear stage, and the first shift pulse is outputted from the data output terminals of the respective flip-flops to drive the scanning signal lines of the display surface, which is characterized by At least one of the flip-flops of the device has the first input of the material input terminal of the flip-flop! Transmission gate, first! An inverter, a second transmission interpole, a second inverter, and a first buffer circuit constituting a data output terminal, the data input terminal, the first transmission gate, the i-th inverter, and the second transmission idler, The second inverter and the m-thrush circuit are connected in this order, and a first pull-up resistor is disposed at the second connection point between the phaser and the second transfer gate. A first pull-down resistor is provided at a point 2 of the second connection I35476.doc 200933587 between the nth and the ith buffer circuits. According to the configuration, the M flip-flops of the i-th shift register sequentially transmit the ^ number, thereby outputting the first shift pulse S for driving the scan signal line to be in at least one flip-flop. A pull-up resistor is disposed at a first connection point between the first inverter and the second transmission idler, and the second inverter is provided.

與第1緩衝電路之Μ赞。、A 峪之間的第2連接點處設置第丨下拉電阻,因 此,可提雨正反器内部之相對於使位準變動至出的側之雜Like the 1st buffer circuit. The second pull-down resistor is set at the second connection point between A and A, so that the inside of the rain/reactor can be lifted relative to the side that causes the level to change to the side.

Ifl之耐H因此’第丨移位脈衝即便接收到使位準變動 至High側之雜訊,亦不易發生位準變動。藉此,可防止產 生由於以無意識之時序,第1移位脈衝成為High而使原本 =進行顯不之閘極線導通所引起之顯示異常。因此,產生 可實現如下掃描信號線驅動電路之效果,該掃描信號 動電路對於使位準變動至High側之雜訊之耐受性較高',且 不易產生顯示異常。 本發明之掃描信號線驅動電路甲,上述第1上拉電阻亦 ❹ 可代替設置於上述第!連接點,而設置於上述第2傳輸閉極 與上述第2反相器之間的第3連接點處,上述第1下拉電阻 亦可代替設置於上述第2連接點處,而設置於上述第丨傳輸 閘極與上述第1反相器之間的第4連接點處。 根據上述構成,第1上拉電阻設置於第2傳輸閘極與第2 反相器之間的第3連接點處,第!下拉電阻設置於第丨傳輸 閘極與第1反相器之間的第4連接點處,因此可提高正反器 内部之相對於使位準變動至High側之雜訊之耐受性。因 此’第1移位脈衝即便接收到使位準變動至High側之雜 135476.doc 12 200933587 訊’亦不易發生位準變動。 本發明之掃描信號線驅動電路中,上述fi反相器亦可 由輸出高位準之信號之第1電晶體、與輸出低位準之信號 :第2電晶體所構成,上述第2反相器亦可由輸出高位準之 . 信號之第3電晶體、與輸出低位準之信號之第4電晶體所構 成’亦可代替設置上述第!上拉電阻及第】下拉電阻,而將 • 上述第1電晶體之驅動能力設定得高於上述第2電晶體之驅 自能力’且亦可將上述第4電晶體之驅動能力設定得高於 上述第3電晶體之驅動能力。 根據上述構成,由於第1反相器之輸出高位準之信號之 第1電晶體的驅動能力’高於輸出低位準之信號之第2電晶 體’故而成為與將上拉電阻設置於^反相器與第2傳輸閑 極之間之第1連接點處的情形相同之狀態。&,由於第2反 相器之輸出低位準之信號之第4電晶體的驅動能力,高於 2出高位準之信號之第3電晶體,故而成為與將下拉電阻 〇 叹置於第2反相器與第1緩衝電路之間之第2連接點處的情 J同之n因此’可提高正反器内部之相對於使位準 變動至High側之雜訊之耐受性,且可設為如下構成:即便 接收到使位準變動至High側之雜訊,第1移位脈衝亦不易 - 發生位準變動。 本發明之掃描信號線驅動電路中’較好的是更包括串級 連接有Μ個正反器之第2移位暫存器與M個邏輯電路,該第 2移位暫存器將上述輸入信號之反轉信號與上述時脈信號 同步地依序傳送至後段之正反器,並自各正反器之資料輸 135476.doc 200933587 出端子輸出第2移位脈衝’上述p移位暫存器之正反器中 之至少-個正反器具備構成該正反器t資料輸入端子之第 3傳輸閘極、第3反相器、第4傳輸閘極、第4反相器及構成 資料輸出端子之第2緩衝電路,上述資料輸入端子、第3傳 輸閘極、第3反相器、第4傳輸閘極、第4反相器及第2緩衝 電路依此順序連接’於上述第3反相器與上述第4傳輸閘極 之間的第5連接點處設置有第2下拉電阻,於上述第4反相 器與上述第2緩衝電路之間的第6連接點處設置有第2上拉 ® 電阻,上述邏輯電路分別將來自上述第1移位暫存器之第 >^”為!以上Μ以下之整數)段之正反器之第1移位脈衝、與 來自上述第2移位暫存器之第N段之正反器之第2移位脈衝 之反轉脈衝的邏輯和,作為第3移位脈衝而輸出,藉由該 第3移位脈衝而對上述掃描信號線進行驅動。 根據上述構成’除了第1移位暫存器外,進而設置有第2 移位暫存器。構成第2移位暫存器之正反器與第丨移位暫存 φ 器相反地依序傳送輸入信號之反轉信號,並輸出第2移位 脈衝。此處,於第2移位暫存器之至少一個正反器中,於 第3反相器與第4傳輸閘極之間的第5連接點處設置有第2下 ‘ 拉電阻’於第4反相器與第2緩衝電路之間的第6連接點處 設置有第2上拉電阻,因此可提高正反器内部之相對於使 位準變動至Low側之雜訊之耐受性。因此,第2移位脈衝 即便接收到使位準變動至Low側之雜訊,亦不易發生位準 變動。 進而’邏輯電路取得來自第1移位暫存器及第2移位暫存 135476.doc -14- 200933587 器中^ r^i 抓 又之正反器的第1移位脈衝及第2移位脈衝之反 轉脈衝的邏輯和’並將該邏輯和作為第3移位脈衝而輸 出對掃描信號線進行驅動。藉此,即便由於位準變動至 Low側之雜訊,第〗移位暫存器之移位中斷且使第1移位脈 衝/肖失,第2移位脈衝之反轉脈衝亦能作為第3移位脈衝而 輸出此處,第2移位脈衝係藉由使輸入信號之反轉信號 移位而輸出,因此,第2移位脈衝之反轉脈衝之波形與正 *移位時之第1移位脈衝的波形相同。因此,即便當自外 。卩接收到使位準變動至L〇W側之雜訊而使第1移位脈衝消 失時,只要第2移位脈衝不消失,則第3移位脈衝之波形與 正常移位時之第丨移位脈衝之波形相同。 如上所述,由於第2移位脈衝相對於使位準變動至L〇w 侧之雜訊不易發生位準變動,故而第3移位脈衝不僅相對 於使位準變動至High側之雜訊不易發生位準變動,而且相 對於使位準變動至Low側之雜訊亦不易發生位準變動。因 ❹ 此,可實現對於使位準變動至High側之雜訊及使位準變動 至Low側之雜訊之雙方耐受性均較高的掃描信號線驅動電 路。 本發明之掃描信號線驅動電路中,上述第2下拉電阻亦 可代替設置於上述第5連接點處,而設置於上述第4傳輸閘 極與上述第4反相器之間的第7連接點處,上述第2上拉電 阻亦可代替設置於上述第6連接點處,而設置於上述第3傳 輸閘極與上述第3反相器之間的第8連接點處。 根據上述構成,第2下拉電阻設置於第4傳輸閘極與第4 135476.doc 15- 200933587 反相器之間的第7連接點處,第2上拉電阻設置於第3 閘極與第3反相器之間的第8連接點處,因此可提高正反器 内。卩之相對於使位準變動至L〇w側之雜訊之耐受性。因 此’第2移位脈衝即便接收到使位準變動至側之雜 訊,亦不易發生位準變動。 本發明之掃描信號線驅動電路中,上述第3反相器亦可 由輸出高位準之信號之第5電晶體、與輸出低位準之信號 之第6電曰曰體所構成,上述第4反相器亦可由輸出高位準之 仏號之第7電晶體、與輸出低位準之信號之第8電晶體所構 成’亦可代替設置上述第2上拉電阻及第2下拉電阻,而將 上述第6電晶體之驅動能力設定得高於上述第5電晶體之驅 動能力,且亦可將上述第7電晶體之驅動能力設定得高於 上述第8電晶體之驅動能力。 根據上述構成,第3反相器之輸出低位準之信號之第6電 日日體的驅動能力’尚於輸出高位準之信號之第$電晶體, 因此成為與將下拉電阻設置於第3反相器與第4傳輸閘極之 間的第5連接點處之情形相同的狀態。又,第4反相器之輸 出高位準之信號之第7電晶體的驅動能力’高於輸出低位 準之仏號之第8電晶體,因此成為與將上拉電阻設置於第4 反相器與第2緩衝電路之間的第6連接點處之情形相同的狀 態。因此,可提高正反器内部之相對於使位準變動至 側之雜讯之耐受子生,日士凡达 了又性且可叹為如下構成:即便接收到使位 準變動至Low側之雜邙,筮,& , / <雜a第2移位脈衝亦不易發生位準變 動0 135476.doc 200933587 ;解決上述問題,本發明之掃描信號線驅動電路之特 之si其具備串級連接有M(M為2以上之整數)個正反器 小一夕㈤第1移位暫存器、串級連接有Μ個正反器之至 乂個第2移位暫存器及Μ個多數電路,上述第1移位暫存 器之個數與上述第2移位暫存器之個數合計為3以上之奇 數’上述第1移位暫存器將自外部輸入之輸入信號與時脈 ㈣同步地依序傳送至後段之正反器,並自各正反器之資Ifl's resistance to H is such that the "second shift pulse" does not easily cause level fluctuation even if it receives noise that causes the level to shift to the High side. As a result, it is possible to prevent display abnormality caused by the first shift pulse being turned to High and the gate line being turned on by the unintended timing. Therefore, there is an effect that the scanning signal line drive circuit can be realized, and the scanning signal circuit is more resistant to noise that causes the level to shift to the High side, and display abnormality is less likely to occur. In the scanning signal line drive circuit A of the present invention, the first pull-up resistor may be provided instead of the above-mentioned first! a connection point is provided at a third connection point between the second transmission closing pole and the second inverter, and the first pull-down resistor may be provided in the second connection point instead of the second connection point The fourth connection point between the transmission gate and the first inverter described above. According to the above configuration, the first pull-up resistor is provided at the third connection point between the second transfer gate and the second inverter, and is! The pull-down resistor is provided at the fourth connection point between the second transfer gate and the first inverter, so that the resistance of the inside of the flip-flop to the noise on the high side can be improved. Therefore, even if the first shift pulse is received, the level shift is not easily caused by the level shifting to the high side 135476.doc 12 200933587. In the scanning signal line driving circuit of the present invention, the fi inverter may be composed of a first transistor that outputs a high level signal and a signal that outputs a low level: a second transistor, and the second inverter may be The output of the third transistor is formed by the third transistor of the signal and the fourth transistor that outputs the signal of the low level. Alternatively, the first pull-up resistor and the pull-down resistor may be provided instead of the first transistor. The driving ability is set higher than the driving ability of the second transistor described above, and the driving ability of the fourth transistor can be set higher than the driving ability of the third transistor. According to the above configuration, since the driving ability of the first transistor of the signal of the high level of the output of the first inverter is higher than the second transistor of the signal of the output low level, the pull-up resistor is set to be inverted. The same state as at the first connection point between the second transmission idler and the second transmission idler. &, because the driving ability of the fourth transistor of the signal of the low level of the output of the second inverter is higher than that of the third transistor of the signal of the second high level, the sigh of the pull-down resistor is placed at the second The second connection point between the inverter and the first buffer circuit is the same as n, so that the tolerance of the inside of the flip-flop can be improved with respect to the noise that causes the level to shift to the High side. The configuration is such that even if the noise that causes the level to shift to the High side is received, the first shift pulse is not easily generated - a level shift occurs. In the scanning signal line driving circuit of the present invention, it is preferable to further include a second shift register and a plurality of logic circuits in which a flip-flop is connected in series, and the second shift register inputs the input. The signal inversion signal is sequentially transmitted to the rear-stage flip-flop in synchronization with the above-mentioned clock signal, and the data is output from each flip-flop 135476.doc 200933587 terminal output second shift pulse 'the above-mentioned p-shift register At least one of the flip-flops includes a third transmission gate, a third inverter, a fourth transmission gate, a fourth inverter, and a constituent data output that constitute the data input terminal of the flip-flop t a second buffer circuit of the terminal, wherein the data input terminal, the third transfer gate, the third inverter, the fourth transfer gate, the fourth inverter, and the second buffer circuit are sequentially connected to the third counter A second pull-down resistor is provided at a fifth connection point between the phase detector and the fourth transmission gate, and a second connection point is provided at a sixth connection point between the fourth inverter and the second buffer circuit. Pulling the resistance, the logic circuit described above is the first >^" from the first shift register a logical sum of a first shift pulse of the flip-flop of the upper and lower integers and an inverted pulse of the second shift pulse of the flip-flop from the Nth stage of the second shift register; The third shift pulse is output, and the scanning signal line is driven by the third shift pulse. According to the above configuration, in addition to the first shift register, a second shift register is further provided. The flip-flop constituting the second shift register sequentially transmits the inverted signal of the input signal in reverse to the second shift register φ, and outputs the second shift pulse. Here, the second shift In at least one of the flip-flops of the register, a second lower pull resistance is provided at the fifth connection point between the third inverter and the fourth transfer gate to the fourth inverter and the second buffer Since the second pull-up resistor is provided at the sixth connection point between the circuits, the tolerance of the inside of the flip-flop to the noise that causes the level to shift to the Low side can be improved. Therefore, even the second shift pulse Receiving the noise that causes the level to change to the Low side, the level change is not easy to occur. Further, the logic circuit obtains the first shift from the temporary storage. And the second shift temporary storage 135476.doc -14- 200933587 ^r^i catches the logical sum of the first shift pulse of the flip-flop and the reverse pulse of the second shift pulse and 'puts the logic And outputting the scanning signal line as the third shift pulse, whereby even if the level shifts to the noise on the Low side, the shift of the shift register is interrupted and the first shift pulse is made/ The second shift pulse inversion pulse can also be output as the third shift pulse, and the second shift pulse is output by shifting the inverted signal of the input signal. Therefore, the second shift is performed. The waveform of the inversion pulse of the bit pulse is the same as the waveform of the first shift pulse at the time of the positive shift. Therefore, even if the noise is changed to the side of the L〇W side, the first time is received. When the shift pulse disappears, the waveform of the third shift pulse is the same as the waveform of the third shift pulse at the time of normal shift as long as the second shift pulse does not disappear. As described above, since the second shift pulse is less likely to cause a level fluctuation with respect to the noise that causes the level to shift to the L〇w side, the third shift pulse is not easily changed not only to the noise that causes the level to shift to the High side. A level change occurs, and level fluctuations are less likely to occur with respect to noise that causes the level to shift to the Low side. Therefore, it is possible to realize a scanning signal line drive circuit which is highly resistant to both the level shifting noise to the High side and the level shifting noise to the Low side. In the scanning signal line drive circuit of the present invention, the second pull-down resistor may be provided at the seventh connection point between the fourth transmission gate and the fourth inverter instead of the fifth connection point. The second pull-up resistor may be provided at the eighth connection point between the third transfer gate and the third inverter instead of being disposed at the sixth connection point. According to the above configuration, the second pull-down resistor is provided at the seventh connection point between the fourth transmission gate and the fourth 135476.doc 15-200933587 inverter, and the second pull-up resistor is disposed at the third gate and the third At the 8th connection point between the inverters, the inside of the flip-flop can be increased.卩 is relative to the tolerance of the noise that causes the level to change to the L〇w side. Therefore, even if the second shift pulse receives noise that causes the level to shift to the side, the level shift is less likely to occur. In the scanning signal line driving circuit of the present invention, the third inverter may be composed of a fifth transistor that outputs a signal of a high level and a sixth electrode that outputs a signal of a low level, the fourth inversion. The device may also be formed by a seventh transistor that outputs a high-order nickname and an eighth transistor that outputs a signal with a low level. Alternatively, instead of providing the second pull-up resistor and the second pull-down resistor, the sixth The driving ability of the transistor is set higher than the driving ability of the fifth transistor, and the driving ability of the seventh transistor can be set higher than the driving ability of the eighth transistor. According to the above configuration, the driving ability of the sixth electric solar cell of the signal of the output of the low level of the third inverter is still at the $th transistor of the signal of the high level, so that the pull-down resistor is set to the third counter. The same state as in the case of the fifth connection point between the phaser and the fourth transmission gate. Further, the driving ability of the seventh transistor of the signal of the high-level output of the fourth inverter is higher than the eighth transistor of the output low level, so that the pull-up resistor is set to the fourth inverter. The same state as in the case of the sixth connection point between the second buffer circuits. Therefore, it is possible to improve the tolerance of the inside of the flip-flop with respect to the noise that causes the level to shift to the side, and the Sunstar is succinct and sighs as follows: even if the level is changed to the Low side The miscellaneous, 筮, & , / < miscellaneous a second shift pulse is also less prone to level change 0 135476.doc 200933587; to solve the above problem, the scanning signal line driver circuit of the present invention has a string The stage is connected with M (M is an integer of 2 or more). The flip-flops are small (1) the first shift register, the cascade is connected to the flip-flops, and the second shift register and the Μ In the majority of the circuits, the number of the first shift register and the number of the second shift registers is an odd number of three or more. The first shift register inputs an input signal from the outside. The clock (4) is synchronously transmitted to the front and back of the forward and reverse, and from the respective forward and reverse devices

料輸出端子輸出第1移位脈衝,下拉電阻連接於上述第1移 位暫存器之正反器中之至少一個正反器之資料輸出端子, 上述第2移位暫存器將上述輸入信號之反轉信號與上述時 脈信號同步而依序傳送至後段之正反H,ϋ自各正反器之 資料輸出端子輸出第2移位脈衝,上拉電阻連接於上述第2 移位暫存器之正反器中之至少一個正反器之資料輸出端 子’將來自上述第1移位暫存器之第聊為1以上Μ以下之 整數)奴之正反器之第丨移位脈衝、與來自上述第2移位暫 存器之第Ν段之正反器之第2移位脈衝的反轉脈衝,輸入至 ,上述多數電路之每一個中,i述多纟電路選擇所輸入之脈 衝中數量較多的脈衝,將選擇結果作為第3移位脈衝而輸 出,藉由該第3移位脈衝而對顯示畫面之掃描信號線進行 驅動。 根據上述構成,第1移位暫存器及第2移位暫存器合計設 置為3以上之奇數個。此處,如上所述,藉由下拉電阻, 第1移位暫存器之相對於使位準變動至High側之雜訊之耐 受性提高,藉由上拉電阻,第2移位暫存器之相對於使位 135476.doc -17- 200933587 準變動至Low側之雜訊之耐受性提高。 &進而’將來自第1移位暫存器及第2移位暫存器中之同— 段之正反器的第!移位脈衝及第2移位脈衝之反轉脈衝輸入 至多數電路中,多數電路選擇所輸入之脈衝中數量較多之 脈衝’並作為第3移位脈衝輸I於所有移位暫存器正常 地進行移位動作之情形時,第1移位脈衝與第2移位脈衝之 反轉脈衝成為同一波形。此處,即便當由於來自外部之使 位準變動至Hlgh側之雜訊、或者使位準變動至L〇w側之雜 :’而使得-部分之移位脈衝產生誤動作,從而使輸入脈 "卩刀成為不同之波形時,因多數電路選擇數量較多 之脈衝,故而第3移位脈衝之波形與正常時無不同。因 此,可實現對於使位準變動至¥側之雜訊與使位準變動 bw側之雜訊之雙方耐受性均較高的掃描信號線驅動電 本發明之掃描信號線驅動電路中,較好的是,於設置複 e 個上mi移位暫存器或者上述第2移位暫存器之情形 Μ複數個第1移位暫存器或者第2移位暫存器彼此並非相 而配置’且不使電源配線及GND配線共用化。 移位暫存1^目對於使料變動至_側之雜訊之耐 -受性較高,相反,相料认& 受性降低。又,楚;轉變動至L〇W側之雜訊之耐 '^ 2移位暫存器相對於使位準變動至Low 侧之雜δί(*之耐受性齡古 側之雜訊之耐受性降=氏因,相對於使位準變動至¥ 器,設置更多之第Γ: 如’當較第2移位暫存 多位暫存器時,若由於使位準變動至 135476.doc •18· 200933587 W側之雜訊而使所有第1移位暫存器產生誤動作,則來 自多數電路之第3移位脈衝亦會成為錯誤W號。]來 針對此,根據上述構成,使第1移位暫存器或者第2移位 暫存器彼此並非相接近而配置 次者第2移位 ^ ^不使電源配線及GND配 ^用化’因此可降低由於使位準變動至剛側之雜訊、The material output terminal outputs a first shift pulse, and the pull-down resistor is connected to a data output terminal of at least one of the flip-flops of the first shift register, and the second shift register inputs the input signal The inversion signal is sequentially transmitted to the front and back H in synchronization with the clock signal, and the second shift pulse is output from the data output terminal of each flip-flop, and the pull-up resistor is connected to the second shift register. The data output terminal of at least one of the flip-flops of the flip-flop is 'the first shift register from the first shift register is one or more integers below the slave's second shift pulse, and An inversion pulse of the second shift pulse from the flip-flop of the second stage of the second shift register is input to each of the plurality of circuits, and the multi-turn circuit selects the input pulse The pulse having a large number of pulses outputs the result of the selection as the third shift pulse, and the scanning signal line of the display screen is driven by the third shift pulse. According to the above configuration, the first shift register and the second shift register are collectively set to an odd number of three or more. Here, as described above, with the pull-down resistor, the tolerance of the first shift register to the noise that causes the level to shift to the High side is improved, and the second shift is temporarily stored by the pull-up resistor. The tolerance of the device is improved relative to the noise of the 135476.doc -17-200933587 quasi-variable to the Low side. & Further' will be the same from the same segment of the first shift register and the second shift register! The inversion pulse of the shift pulse and the second shift pulse is input to a plurality of circuits, and most of the circuits select a pulse of a larger number of the input pulses and transmit the I as the third shift pulse to all the shift registers. When the shift operation is performed, the first shift pulse and the inverted pulse of the second shift pulse have the same waveform. Here, even when the noise is shifted to the Hggh side from the external level, or the level is changed to the L〇w side of the miscellaneous: 'The shift portion of the - part is malfunctioning, thereby making the input pulse &quot When the boring tool becomes a different waveform, since the majority of the circuits select a large number of pulses, the waveform of the third shift pulse is not different from the normal time. Therefore, it is possible to realize a scanning signal line driving circuit which is highly resistant to both the noise which changes the level to the ¥ side and the noise which causes the level fluctuation bw side to be high. Preferably, in the case where the plurality of upper mi shift registers or the second shift register are set, the plurality of first shift registers or the second shift registers are not arranged in phase with each other. 'Do not share the power supply wiring and GND wiring. The shift temporary storage 1^ is resistant to the noise of the material changing to the _ side - the higher the sensitivity, on the contrary, the phase recognition & Also, Chu; the resistance of the noise to the L〇W side of the '^ 2 shift register relative to the level shifting to the Low side of the δί (* tolerance to the age of the ancient side of the noise resistance Responsibility = the cause of the cause, relative to the level change to the device, set more third: such as 'when the second shift is temporarily stored in the multi-bit register, if the level changes to 135476. Doc •18· 200933587 The noise on the W side causes all the first shift registers to malfunction, and the third shift pulse from most circuits also becomes the error W number.] In view of this, according to the above configuration, The first shift register or the second shift register is not close to each other, and the second shift is disposed. The power supply wiring and the GND are not used. Therefore, the level shift can be reduced to just Side noise,

:者使位準變動至L〇W側之雜訊而使得第!或者第2移位暫 存器之其中一方全部產生誤動作之風險。因此,可進一步 減小雜訊對第3移位脈衝所造成之影響。 本發明之顯示裝置具備上述掃描信號線驅動電路。 .根據上述構成,掃描信號線驅動電路對於使位準變動至 High側之雜訊、或者使位準變動至咖側之雜訊與使位準 變動至Low側之雜訊之雙方之耐受性均較高,因此發揮如 下效果’@’可實現對於使至少位準變動至High側之雜訊 之耐受性較高,且不易產生顯示異常之顯示裝置。 如上所述,本發明之掃描信號線驅動電路中,下拉電阻 連接於上述正反器中之至少—個正反器之資料輸出端子, 因此發揮如下效果,即’可實輯於使位準變動至Η㈣側 之雜訊之耐受性較高,且不易產生顯示異常之掃描信號線 驅動電路。 本發明之進而其他目的、特徵及優點,可藉由以下所示 之Α載而充分理解。又’本發明之利益可利用參照了隨附 圖式之以下說明而變得明確。 【實施方式】 以下’根據圖式對本發明中之半導體裝置之實施形態進 135476.doc -19- 200933587 行說明。再者,於以下之說明中,為了實施本發明而於技 術性方面作出較佳之各種限定,但本發明之範圍並不限定 於以下之實施形態及圖式。 [實施形態1] 根據圖1及圖2對本發明之第1實施形態進行說明,係如 下所述* 圖2係表示本實施形態之TFT液晶面板1之構成的概略 圖。TFT液晶面板1具備玻璃基板2、源極驅動器3及閘極驅 動器4。玻璃基板2上設置有源極線5及閘極線6,於源極線 5及閘極線6之各交點上設置有TFT7及像素8,像素8之—端 連接於對向電極9。此處,TFT液晶面板1之玻璃基板2、源 極驅動器3、源極線5、閘極線6、TFT7、像素8及對向電極 9 ’係分別與圖13所示之TFT液晶面板ι〇1之玻璃基板1〇2、 源極驅動器103、源極線105、閘極線1〇6、TFT1〇7、像素 108及對向電極1〇9大致相同,因此省略詳細之說明。 本實施形態中,為了強化TFT液晶面板】對於電磁波雜 訊之耐受性,以下述方式構成閘極驅動器4。 圖1係表示閘極驅動器4之構成之電路圖。閘極驅動器4 具備移位暫存器lOd、7個位準偏移器電路12、7個輸出緩 衝窃13以及7個輸出端子14,移位暫存器1〇d具備串級連接 之7個D-FF11。D-FF11、位準偏移器電路12、輸出緩衝器 13及輸出端子14,與圖14所示之d_ffui、位準偏移器電 路112、輸出緩衝器113及輸出端子ιΐ4係大致相同。再 者,位準偏移器電路12或輸出緩衝器13之個數不限於7 135476.doc 200933587 個’可根據所掃描之閘極線之條數而適當設定。 移位暫存器l〇d具備串級連接之7個〇_1?1711,移位暫存器 之初段之D_FF1〗之資料輸入端子D中係輸入有閘極驅 動器4之輸入信號ΙΝβ又,移位暫存器1〇d之各D_FF11之時 • 脈端子以中輸人有動作時脈CLK,且自各D-FF11之資料 輸出端子Q輸出信號Qld〜Q7d。: The person moves the level to the noise on the L〇W side to cause a risk of malfunction of all of the first or second shift register. Therefore, the influence of the noise on the third shift pulse can be further reduced. A display device of the present invention includes the above-described scanning signal line drive circuit. According to the above configuration, the scanning signal line drive circuit is resistant to the level shifting to the noise on the High side, or the level shifting to the noise side of the coffee side and the level shifting to the noise side of the Low side. Since the average effect is '@', it is possible to realize a display device which is highly resistant to noise in which at least the level is shifted to the High side and which is less likely to cause display abnormality. As described above, in the scanning signal line driving circuit of the present invention, the pull-down resistor is connected to the data output terminal of at least one of the flip-flops, and thus the effect is that the level can be changed. The noise of the noise on the side of the (4) side is high, and it is difficult to generate a scanning signal line drive circuit that displays an abnormality. Still other objects, features, and advantages of the present invention will be apparent from the appended claims. Further, the benefits of the present invention can be made clear by reference to the following description in the accompanying drawings. [Embodiment] Hereinafter, an embodiment of a semiconductor device according to the present invention will be described with reference to the drawings in 135476.doc -19-200933587. Further, in the following description, various limitations are set forth in the technical aspects of the invention, but the scope of the invention is not limited to the embodiments and the drawings below. [Embodiment 1] A first embodiment of the present invention will be described with reference to Fig. 1 and Fig. 2, and Fig. 2 is a schematic view showing a configuration of a TFT liquid crystal panel 1 of the present embodiment. The TFT liquid crystal panel 1 includes a glass substrate 2, a source driver 3, and a gate driver 4. The source substrate 5 and the gate line 6 are provided on the glass substrate 2, and the TFTs 7 and the pixels 8 are provided at the intersections of the source line 5 and the gate line 6, and the ends of the pixels 8 are connected to the counter electrode 9. Here, the glass substrate 2, the source driver 3, the source line 5, the gate line 6, the TFT 7, the pixel 8, and the counter electrode 9' of the TFT liquid crystal panel 1 are respectively connected to the TFT liquid crystal panel shown in FIG. The glass substrate 1〇2, the source driver 103, the source line 105, the gate line 1〇6, the TFT1〇7, the pixel 108, and the counter electrode 1〇9 of 1 are substantially the same, and thus detailed description thereof will be omitted. In the present embodiment, in order to enhance the resistance of the TFT liquid crystal panel to electromagnetic wave noise, the gate driver 4 is constructed as follows. Fig. 1 is a circuit diagram showing the configuration of the gate driver 4. The gate driver 4 is provided with a shift register 10d, 7 level shifter circuits 12, 7 output buffers 13 and 7 output terminals 14. The shift register 1〇d has 7 cascade connections. D-FF11. The D-FF 11, the level shifter circuit 12, the output buffer 13, and the output terminal 14 are substantially the same as the d_ffui, the level shifter circuit 112, the output buffer 113, and the output terminal ι4 shown in Fig. 14. Further, the number of the level shifter circuit 12 or the output buffer 13 is not limited to 7 135476.doc 200933587 ' can be appropriately set according to the number of gate lines to be scanned. The shift register l〇d has seven 〇_1?1711 connected in series, and the input signal D of the gate driver 4 is input to the data input terminal D of the D_FF1 of the initial stage of the shift register. When the D_FF11 of the shift register 1 〇d is shifted, the pulse terminal has the operation clock CLK, and the data output terminal Q of each D-FF 11 outputs the signals Qld to Q7d.

. 進而’移位暫存器中,下拉電阻別連接於各D_FFU 之資料輸出端子Q。更具體而言,下拉電阻Rd之一端連接 於DFF11之資料輸出端子Q,而下拉電阻則之另一端接 地。 藉此’當自外部接收電磁波雜訊,d_ffi 1之信號 Qld〜Q7d之位準欲變動至High側時,具有抵消該位準變動 之效果。因此,可防止由於使位準變動至mgh側之雜訊而 使本來不進行顯示之閘極線導通,從而產生顯示異常之情 形。 ❹ 再者,下拉電阻Rd之電阻值越小,越能夠提高對於使位 準變動至High側之雜訊之耐受性,相反地,移位暫存器 Wd輸出High脈衝之驅動能力越降低。若移位暫存器i〇d之 驅動能力降低,則於接收到使位準變動至Low側之雜訊之 情形時,正常地移位之High脈衝有時會消失。又,下拉電 阻Rd之電阻值成為與各D_FF11之緩衝能力之相對值,對於 各D-FFU之緩衝能力而言,根據驅動之電路規模或動作速 度,所需之值並不同。因此,下拉電阻Rdi電阻值係考慮 到所假定之雜訊、D-FF11之緩衝能力等而經設定。 135476.doc -21 - 200933587 又,本實施形態中,將下拉電阻…設置於各之 資料輸出端子Q,但即便係將下拉電阻RdS置於至少一個 D-FF 11之貧料輸出端子Q之構成,與先前構成相比,亦可 提高雜訊耐受性。又,D-FFli亦可為JK型等之其他正反 器。 [實施形態2] 若根據圖3至囷6對本發明之第2實施形態進行說明,則 下所述第1實施形態之閘極驅動器4中,雖然提高了對 鬱 於使位準變動至High側之雜訊之耐受性,但由於設置有下 拉電阻Rd ’對於使位準變動至L〇w側之雜訊之耐受性會降 低。因此,本實施形態中,對如下之構成進行說明,該構 成相對於使位準變動至L〇w側之雜訊亦可提高耐受性。 圖3係表示本實施形態之閘極驅動器24之構成的電路 圖。閘極驅動器24具備2個移位暫存器10d · 10u、7個位準 偏移器電路12、7個輸出緩衝器13、7個輸出端子14及7個 ⑩ OR電路1 5。即,閘極驅動器24係於圖1所示之閘極驅動器 4中進而具備移位暫存器1〇u及〇R電路。之構成。 移位暫存器l〇u與移位暫存器1〇d同樣地,亦具備串級連 接之7個D-FF11,閘極驅動器4之輸入信號IN經由反相器 . INV1而輸入至移位暫存器1〇11之初段之D_FF11之資料輸入 端子D。又,移位暫存器l〇u之各D-FF11之時脈端子CK中 亦輸入有動作時脈CLK,自各D-FF11之資料輸出端子Q輸 出信號Qlu〜Q7u。 進而’移位暫存器10u之各D_FF11之資料輸出端子q上 135476.doc •22· 200933587 連接有上拉電阻Ru。更具體而言,上拉電阻RU之一端連Further, in the shift register, the pull-down resistor is not connected to the data output terminal Q of each D_FFU. More specifically, one end of the pull-down resistor Rd is connected to the data output terminal Q of the DFF 11, and the other end of the pull-down resistor is grounded. Therefore, when the electromagnetic wave noise is received from the outside, the signals Qld to Q7d of the d_ffi 1 are changed to the High side, and the effect of canceling the level fluctuation is obtained. Therefore, it is possible to prevent the gate line which is not originally displayed from being turned on due to the level fluctuation to the noise on the mgh side, thereby causing an abnormal display. Further, the smaller the resistance value of the pull-down resistor Rd, the more the resistance to the noise on the high side can be improved, and conversely, the drive capability of the shift register Wd to output the High pulse is lowered. If the driving ability of the shift register i 〇 d is lowered, the normally shifted High pulse sometimes disappears when a noise that causes the level to shift to the Low side is received. Further, the resistance value of the pull-down resistor Rd becomes a relative value to the buffering capacity of each D_FF11, and the buffering capacity of each D-FFU differs depending on the circuit scale or the operating speed of the driving. Therefore, the pull-down resistor Rdi resistance value is set in consideration of the assumed noise, the buffering capability of the D-FF 11, and the like. 135476.doc -21 - 200933587 In the present embodiment, the pull-down resistors are provided in the respective data output terminals Q, but even if the pull-down resistor RdS is placed in the lean output terminal Q of at least one D-FF 11, Compared with the previous configuration, the noise tolerance can also be improved. Also, D-FFli can be other positive and negative devices such as JK type. [Embodiment 2] When the second embodiment of the present invention is described with reference to Figs. 3 to 6 , the gate driver 4 of the first embodiment described above is improved in the level shift to the High side. The noise is tolerated, but the resistance of the noise that causes the level to change to the L〇w side is lowered due to the provision of the pull-down resistor Rd'. Therefore, in the present embodiment, the following configuration will be described, and the configuration can improve the tolerance with respect to the noise that causes the level to shift to the L〇w side. Fig. 3 is a circuit diagram showing the configuration of the gate driver 24 of the present embodiment. The gate driver 24 is provided with two shift registers 10d, 10u, seven level shifter circuits 12, seven output buffers 13, seven output terminals 14, and seven 10 OR circuits 15. That is, the gate driver 24 is provided in the gate driver 4 shown in Fig. 1 and further includes shift register 1〇u and 〇R circuits. The composition. Similarly to the shift register 1〇d, the shift register l〇u also has seven D-FFs 11 connected in series, and the input signal IN of the gate driver 4 is input to the shift via the inverter INV1. The data input terminal D of D_FF11 at the beginning of the bit register 1〇11. Further, an operation clock CLK is also input to the clock terminal CK of each of the D-FFs 11 of the shift register l〇u, and signals Qlu to Q7u are output from the data output terminals Q of the respective D-FFs 11. Further, the data output terminal q of each D_FF11 of the shift register 10u is 135476.doc •22·200933587 The pull-up resistor Ru is connected. More specifically, one end of the pull-up resistor RU

接於D-FF11之資料輸出她;η I 貝叶荆®知子Q,而上拉電阻Ru之另一端連 接於電源電位。 自移位暫存器服之各D姻1輸出信卿d〜Q7d,自移 位暫存器1〇U之各D_FF11輸出信號叫〜Q7u。信號The data connected to D-FF11 outputs her; η I Bayer® Chiss Q, and the other end of the pull-up resistor Ru is connected to the power supply potential. The self-shift register stores each of the D 1 outputs Xinqing d~Q7d, and the D_FF11 output signals of the self-shifted register 1〇U are called ~Q7u. signal

Qld〜Q7d分別輸入至各0R電路15之輸入端子之其中一方。 另一方面,信號Q1U〜Q7u分別經由反相㈣νι而輸入至各 ❿ ❹ OR電路15之輸入端子之另一方。藉此,各0R電路15中, 將信號Qmd與信號伽咖為卜?之整數)之反轉信號之邏輯 和作為信號㈣爪為1〜7之整數)而輪出至各位準偏移器電 路12。各信號Q1〜Q7藉由位準偏移器電路12而轉換信號位 準,並經由輸出緩衝器13而自輸出端子14輸出至閉極線。 如此’本實施形態之閘極驅動器24具備移位暫存器_ 及移位暫存器1〇U此兩個移位暫存器,上述移位暫存器_ 於各㈣11之資料輸出端子Q上設置有下拉電阻Rd,上述 移位暫存Is H)U於各D_FF11<f料輸出端子Q上設置有上 拉電阻Ru,且使邏輯值與經移位暫存器i〇d移位之信號相 反之信號產生移位。移位暫存器1〇d於接收來自外部之電 磁波雜訊,D-FFU之信號Qld〜Q7d之位準欲變動至聊側 之情形時’具有抵消該位準變動之效果。另一方面,移位 暫存器10u於接收到來自外部之電磁波雜訊,&则之信 號Q:〜Q7u之位準欲變動至L〇w側之情形時,具有抵消該 位準變動之效果。 進而,來自移位暫存器10d之信號如咖為“之整數) I35476.doc •23- 200933587 ”來自移位暫存器1〇u之信號卩訓⑼為卜?之整數)之反轉 L號輸人至C)R電路15 ’⑽電路將該等之邏輯和作為信號 Qm(m為1〜7之整數)而輸丨。因此,即便當藉由來自外部 之雜訊而使移位暫存器1〇d · 1〇u之其中一方之輸出消失 =’信號Q1〜Q7亦不會消失。如此,閘極驅動器4不僅可 提高對於使位準變動至High側之雜訊之耐受性,亦可提高 對於使對位準變動至L〇w側之雜訊之耐受性。 ° '處而,對來自移位暫存器1〇d. 1〇U&〇R電路I5之輸出 k號之時序進行說明。 圖4係表示未接收到雜訊之通常時之信號Qld〜Q7d、信 號Qlu〜Q7u及信號Q1〜Q7之信號波形的時序圖。當輸入有 輸入信號IN時,於移位暫存器1〇d中,各D_FF1U&合動作 時脈CLK之上升而使輸入信號IN移位,並輸出信號Qld to Q7d are input to one of the input terminals of each of the OR circuits 15 respectively. On the other hand, the signals Q1U to Q7u are input to the other of the input terminals of the respective OR circuits 15 via the inversion (four) ν. Thereby, in each of the NR circuits 15, the signal Qmd and the signal gamma are made to be embossed? The logic of the inverted signal of the integer) and the signal (4) is an integer of 1 to 7 and is rotated to the quasi-offset circuit 12. Each of the signals Q1 to Q7 is converted to a signal level by the level shifter circuit 12, and is output from the output terminal 14 to the closed line via the output buffer 13. Thus, the gate driver 24 of the present embodiment includes the shift register _ and the shift register 1 〇 U, the shift register, the shift register _ at each (four) 11 of the data output terminal Q A pull-down resistor Rd is disposed on the shift register Is H)U, and a pull-up resistor Ru is disposed on each D_FF11<f material output terminal Q, and the logic value and the shift register i〇d are shifted. The signal with the opposite signal produces a shift. The shift register 1 〇d has the effect of canceling the level change when receiving the electromagnetic noise from the outside and the position of the signal Qld to Q7d of the D-FFU is changed to the chat side. On the other hand, when the shift register 10u receives the electromagnetic wave noise from the outside, and the signal Q:~Q7u of the signal is changed to the L〇w side, the shift register 10u cancels the level change. effect. Further, the signal from the shift register 10d is "integer" I35476.doc • 23- 200933587 ” The signal training (9) from the shift register 1〇u is 卜? The integer number is inverted. The L number is input to the C) R circuit. The '10' circuit converts the logical sum of these signals as the signal Qm (m is an integer from 1 to 7). Therefore, even when the output of one of the shift registers 1 〇d · 1〇u disappears by the noise from the outside = 'the signals Q1 to Q7 do not disappear. Thus, the gate driver 4 can not only improve the resistance to the noise that causes the level to shift to the High side, but also improve the resistance to the noise that causes the level to shift to the L〇w side. ° ', the timing of the output k number from the shift register 1〇d. 1〇U&〇R circuit I5 will be described. Fig. 4 is a timing chart showing signal waveforms of signals Qld to Q7d, signals Qlu to Q7u, and signals Q1 to Q7 which are not normally received. When the input signal IN is input, in the shift register 1〇d, each D_FF1U&integration action clock CLK rises to shift the input signal IN, and outputs a signal.

Qld〜Q7d。另一方面’於移位暫存器10u中,各D-FF11配 合動作時脈CLK之上升而使輸入信號IN之反轉信號移位, 並輸出信號Qlu〜Q7u。將信號Qmd與信號Qmu(mg i〜7之 整數)之反轉信號輸入至OR電路15中,〇R電路15輸出作為 該等之邏輯和之信號Qm(m為1〜7之整數)。 圖5係表示接收到位準變動至l〇w側之雜訊時之信號 Qld〜Q7d、信號Qlu〜Q7u及信號Q1〜Q7之信號波形的時序 圖。移位暫存器l〇d中’由於雜訊之影響,信號Q3diHigh 脈衝消失,因此亦不會輸出信號Q4d〜Q7d。另一方面,移 位暫存器10u中,於各D-FF11之資料輸出端子q上設置有 上拉電阻Ru,因此信號Qlu〜Q7u不易變動至Low側。因 135476.doc -24- 200933587 此,移位暫存器1 〇u中,不易受到使信號變動至Low側之 雜訊之影響,從而雜訊產生時之信號Q3u$會消失。因 此,信號Qlu〜Q7u不受雜訊之影響而以與通常時相同之方 式輸出,信號Qlu〜Q7u之反轉信號輸入至〇R電路15。因 此,來自OR電路I5之輸出信號Q1〜Q7成為與通常時相同之 波形。Qld~Q7d. On the other hand, in the shift register 10u, each D-FF 11 shifts the inverted signal of the input signal IN in response to the rise of the operation clock CLK, and outputs signals Qlu to Q7u. The inverted signal of the signal Qmd and the signal Qmu (an integer of mg i to 7) is input to the OR circuit 15, and the 〇R circuit 15 outputs a signal Qm (m is an integer of 1 to 7) as the logical sum. Fig. 5 is a timing chart showing signal waveforms of signals Qld to Q7d, signals Qlu to Q7u, and signals Q1 to Q7 when the level shift is received to the noise on the l〇w side. In the shift register l〇d, the signal Q3diHigh pulse disappears due to the influence of noise, so the signals Q4d to Q7d are not output. On the other hand, in the shift register 10u, since the pull-up resistor Ru is provided on the data output terminal q of each D-FF 11, the signals Qlu to Q7u are not easily changed to the Low side. Since 135476.doc -24- 200933587, the shift register 1 〇u is not susceptible to the noise that causes the signal to change to the Low side, so that the signal Q3u$ disappears when the noise is generated. Therefore, the signals Qlu to Q7u are outputted in the same manner as usual in the absence of noise, and the inverted signals of the signals Qlu to Q7u are input to the 〇R circuit 15. Therefore, the output signals Q1 to Q7 from the OR circuit I5 become the same waveform as in the normal case.

相反地’於接收到使信號變動至High側之雜訊之情形 時’即便移位暫存器10u中之移位中斷,移位暫存器亦 不易受到使信號變動至High側之雜訊之影響,故而來自移 位暫存益lOdi^fs波Q1 d〜Q7d不會消失。因此,來自電 路15之輸出信號Q1〜Q7中不會出現雜訊之影響。 如上所述,閘極驅動器4即便於接收到使信號變動至 Low側之雜訊、以及使信號變動至出的側之雜訊中之任一 個雜訊時,亦可輸出與通常時相同之信號。因此,具備本 實施形態之閘極驅動器24之TF丁液晶面板,即便自外部接 收到電磁波雜訊亦不易產生顯示異常。 再者’閘極驅動器24中,輸出來自移位暫存器1〇咖為 1〜7之整數)之信號Qmd與來自務位暫存器i〇u之信號 (m為卜7之整數)之反轉信號的邏輯和之電路並不限定於 OR電路15 ’亦可由AND雷拉播士 „ 电路構成。即,如圖6所示,亦可 將信號Qmd之反轉信號與传妹^ 與^戒Qmu輸入至AND電路16中, 且將AND電路16輸出之反轉作 得仏說作為信號Qm而輸出至位 準偏移器電路12中。 [實施形態3] 135476.doc •25· 200933587Conversely, 'when receiving the noise that causes the signal to shift to the High side', even if the shift in the shift register 10u is interrupted, the shift register is less susceptible to the noise that causes the signal to shift to the High side. The effect, therefore, from the shift temporary storage benefits lOdi^fs wave Q1 d~Q7d will not disappear. Therefore, no influence of noise occurs in the output signals Q1 to Q7 from the circuit 15. As described above, the gate driver 4 can output the same signal as usual when receiving any of the noise that causes the signal to shift to the Low side and the noise that causes the signal to shift to the side. . Therefore, the TF liquid crystal panel including the gate driver 24 of the present embodiment is less likely to cause display abnormality even if electromagnetic wave noise is received from the outside. Further, in the 'gate driver 24, the signal Qmd from the shift register 1 is an integer of 1 to 7) and the signal from the bit register i〇u (m is an integer of 7) The circuit of the logical sum of the inverted signal is not limited to the OR circuit 15'. It can also be composed of the AND Relais „ 电路 circuit. That is, as shown in FIG. 6 , the inverted signal of the signal Qmd can also be transmitted to the viewer. The Qmu is input to the AND circuit 16, and the inversion of the output of the AND circuit 16 is outputted as the signal Qm to the level shifter circuit 12. [Embodiment 3] 135476.doc •25· 200933587

若根據圖7至圖9對本發明之第3實施形態進行說明,貝, 如下所述。實施形態卜2中,對在〇那之資料輸出端子= 下-段之D_FF之資料輸人端子之間,連接有下拉電阻或者 上拉電阻的構成進行了說明。藉此,可提高各D-FF間之雜 訊耐受性,但由於D-FF之内部電路會受到雜訊之影響從 而存在來自D-FF之輸出信號產生變動之虞。因&,於本實 施形態中’對藉由於D_FF内部設置下拉電阻及上拉電阻而 提高閘極驅動器之雜訊耐受性的構成進行說明。 圖7係表示本實施形態之閘極驅動器34之構成的電路 圖。閘極驅動器34與如下構成相同,該構成係於圖3所示 之閉極驅動器24中’代替移位暫存器HM· l〇u而設置移位 暫存器30d· 30U所成纟。移位暫#器遍係如下之構成, 即’於圖3所示之移位暫存器i〇d中,並未於IFF間設置下 拉電阻Rd,而是設以代替dffu,各DFF3id 輸出信號Qlld〜Q17d。又,移位暫存器3〇U係如下之構 成即於圖3所示之移位暫存器l〇u中,並未於D-FF間設 置上拉電阻Ru,而是設置D_FF31u以代替,各D_ FF3U輸出信號qUu〜Q17u。對圖7中與圖3所示之閘極驅 動器24之構件相同之構件附上相同符號,並省略詳細之說 明。 D FF31d及D-FF3 1u均於内部具有下拉電阻及上拉電 阻。D-FF31d係強化相對於使信號變動至mgh側之雜訊之 耐文性的構成。另一方面,d_FF3u係強化相對於使信號 變動至Low側之雜訊之耐受性的構成。 135476.doc • 26 - 200933587 因此,信號Q11 d~Q 17d不易受到變動至High側之雜訊之 影響,信號Ql 1 u~Q 1 7u不易受到變動至Low側之雜訊之影 響。進而’信號Qnd(n為11〜17之整數)與信號Qnu(;n為 11〜17之整數)之反轉信號輸入至OR電路15中,OR電路15 將該等之邏輯和作為信號Qm(m為1〜7之整數)而輸出。因 ' 此,即便當藉由來自外部之雜訊,移位暫存器30d · 30u之 • 其中一方之輸出消失時,信號Q1〜Q7亦不會消失。 ❹ 繼而,對D-FF3 1 d · 3 1 u之具體構成進行說明。 ❹ 圖8係表示D-FF3 Id之詳細構成之電路圖。D-FF3 Id具備 8個 P通道 MOS (Metal oxide semiconductor,金屬氧化物半 導體)電晶體P1〜P8(以下為電晶體P1〜P8)、8個1^通道!^〇8 電曰曰體N1〜N8(以下為電晶體N1〜N8)、三個反相器INV3以 及緩衝器BUFF。輸入至時脈輸入端子CK之動作時脈CLK 之其中一方,經由兩個反相器INV3而成為信號CKD。又, 輸入至時脈輸入端子CK之動作時脈Clk之另一方經由一個 反相器INV3而成為信號CKDB。 2個電晶體P1 · N1構成傳輸閘極(第丨傳輸閘極),來自資 料輸入端子D之信號輸人至^傳輸閘極。電晶㈣之閉極A third embodiment of the present invention will be described with reference to Figs. 7 to 9 as follows. In the second embodiment, a configuration in which a pull-down resistor or a pull-up resistor is connected between the data input terminals of the D_FF of the data output terminal = the lower stage is described. Thereby, the noise tolerance between the D-FFs can be improved, but since the internal circuit of the D-FF is affected by the noise, there is a variation in the output signal from the D-FF. In the present embodiment, the configuration in which the noise resistance of the gate driver is improved by the pull-down resistor and the pull-up resistor provided in the D_FF will be described. Fig. 7 is a circuit diagram showing the configuration of the gate driver 34 of the present embodiment. The gate driver 34 has the same configuration as that of the flip-flop driver 24 shown in Fig. 3, in which the shift register 30d·30U is provided instead of the shift register HM·l〇u. The shifting temporary device is configured as follows, that is, in the shift register i〇d shown in FIG. 3, the pull-down resistor Rd is not provided between the IFFs, but is instead set to replace the dffu, and each DFF3id output signal Qlld~Q17d. Moreover, the shift register 3〇U is configured as follows. In the shift register l〇u shown in FIG. 3, the pull-up resistor Ru is not provided between the D-FFs, but D_FF31u is set instead. , each D_ FF3U output signal qUu~Q17u. The same components as those of the gate driver 24 shown in Fig. 3 are denoted by the same reference numerals, and detailed description thereof will be omitted. Both D FF31d and D-FF3 1u have pull-down resistors and pull-up resistors internally. The D-FF 31d is configured to strengthen the text resistance with respect to the noise that causes the signal to shift to the mgh side. On the other hand, d_FF3u is a configuration for enhancing the resistance to noise that causes the signal to shift to the Low side. 135476.doc • 26 - 200933587 Therefore, the signals Q11 d~Q 17d are not easily affected by the noise that changes to the High side, and the signals Ql 1 u~Q 1 7u are not susceptible to noise that changes to the Low side. Further, an inverted signal of the signal Qnd (n is an integer of 11 to 17) and the signal Qnu (where n is an integer of 11 to 17) is input to the OR circuit 15, and the OR circuit 15 uses the logical sum of the signals as the signal Qm ( m is an integer from 1 to 7 and is output. Therefore, even when the output of one of the shift registers 30d · 30u disappears by noise from the outside, the signals Q1 to Q7 do not disappear.继 Next, the specific configuration of D-FF3 1 d · 3 1 u will be described. ❹ Fig. 8 is a circuit diagram showing the detailed configuration of the D-FF3 Id. D-FF3 Id has eight P-channel MOS (Metal Oxide Semiconductor) transistors P1 to P8 (hereinafter, transistors P1 to P8) and eight 1^ channels! ^〇8 Electric body N1~ N8 (hereinafter, transistors N1 to N8), three inverters INV3, and a buffer BUFF. One of the operation clocks CLK input to the clock input terminal CK becomes the signal CKD via the two inverters INV3. Further, the other one of the operation clocks Clk input to the clock input terminal CK becomes the signal CKDB via one inverter INV3. The two transistors P1 · N1 form the transmission gate (the third transmission gate), and the signal from the data input terminal D is input to the transmission gate. Electrode (4)

中輸入有信號CKD,電晶體N1之閘極中輸入有信號 CKDB。 " J 2個電晶體Ρ2· N2構成反相器(第1反相器)。又,*個電 晶體P5 ’ Ρ6 · Ν6 · N5係串聯地連接。具體而言,電晶體 P5之源極連接於電源電位,電晶體p5之沒極連接於電晶體 P6之源極’電晶體?6之沒極連接於電晶體灿之沒極,電 135476.doc -27- 200933587 曰曰曰體N6之源極連接於電晶體N5之沒極,電曰曰曰體N5之源極 接地。電晶體P5之閘極中輸入有信號⑽,電晶體奶之開 極中輸入有信號CKDB。 由電晶體P1 · N1構成之幻傳輸閘極之輸出,係輸入至 由電晶體P2 · N2構成之第!反相器、電晶體?6之汲極及電 晶體N6之汲^極。 . 2個電晶體P3 . N3亦構成傳輸閘極(第2傳輸閘極),電晶 體P2之汲極、電晶體N2之汲極、電晶體p6之閘極、電晶 © 體N6之閘極以及第2傳輸閘極之輸入彼此相連接。電晶體 P3之閘極中輸入有信號CKDB,電晶體们之閘極中輸入有 信號CKD » 2個電晶體P4 · N4構成反相器(第2反相器)。又,4個電 晶體P7 · P8 · N8 · N7係串聯地連接。具體而言,電晶體 P7之源極連接於電源電位,電晶體p7之汲極連接於電晶體 P8之源極’電晶體P8之汲極連接於電晶體N8之汲極,電 ◎ 晶體N8之源極連接於電晶體N7之汲極,電晶體^^之源極 接地。電晶體P7之閘極中輸入有信號CKDB,電晶體町之 閘極中輸入有信號CKD。 由電晶體P3 · N3構成之第2傳輸閘極之輸出,係輸入至 由電晶體P4 · N4構成之第2反相器、電晶體?8之汲極及電 晶體N8之沒極。 電晶體P4之汲極、電晶體N4之汲極、電晶體?8之閘極 及電晶體N8之閘極均連接於緩衝器BUFF之輸入端子。緩 衝器BUFF之輸出端子成為D-FF3 1 d之資料輸出端子q。 135476.doc • 28 - 200933587 此處,將由電晶體P1 · N1構成之第1傳輸閘極、與由電 晶體P2 · N2構成之第}反相器之間的連接點作為點a ^又, 將由電bb體P2 · N2構成之反相器、與由電晶體ρ3·Ν3構 成之傳輸閘極之間的連接點作為點b。又,將由電晶體 P3 · N3構成之傳輸閘極、與由電晶體p4 · N4構成之反相 器之間的連接點作為點c。又’將由電晶體Ρ4 · N4構成之 反相器與緩衝器BUFF之間的連接點作為點d。 D-FF31d中,進而於點b處設置有上拉電eRu1,於點d 處設置有下拉電阻Rd 1 ^藉此,即便接收到使位準變動至 High侧之雜訊,來自緩衝器bUFF之輸出信號,即,來自 D-FF 3 Id之輸出信號之位準亦不易變動。即,藉由上拉電 阻Ru 1及下拉電阻Rd 1,提高D-FF3 1 d内部之對於使位準變 動至High側之雜訊之耐受性, 再者’代替設置上拉電阻Rul及下拉電阻Rdl,而增大 電晶體P2及電晶體N4之閘極寬度,或者縮短閘極長度,藉 此提高電晶體P2及電晶體N4之驅動能力,從而亦可與上述 同樣地提高D-FF31d内部之對於使位準變動至High側之雜 訊之耐受性。 又’於點a處設置下拉電阻Rd 1,於點c處設置上拉電阻 Rui,藉此,亦可同樣地提高D_FF31d内部之對於位使準 變動至High側之雜訊之耐受性。 圖9係表示D-FF31U之詳細構成之電路圖。D_FF3】u係如 下構成.於圖8所示之D-FF3 Id中’代替於點b處設置上拉 電阻Ru 1,於點d處設置下拉電阻Rd 1,而於點b處設置下 135476.doc -29- 200933587 拉電阻Rd2,於點d處設置上拉電阻Ru2。藉此,與D-FF31d相反地’ d-FF31u即便接收到使位準變動至Low側之 雜訊’來自緩衝器BUFF之輸出信號,即,來自D-FF31U之 輸出信號之位準亦不易變動。即’可藉由上拉電阻Ru2& 下拉電阻Rd2,而提高D-FF31U内部之對於使位準變動至 Low側之雜訊之耐受性。The signal input CKD is input to the middle, and the signal CKDB is input to the gate of the transistor N1. " J 2 transistors Ρ2· N2 constitute an inverter (first inverter). Further, * transistors P5' Ρ 6 · Ν 6 · N5 are connected in series. Specifically, the source of the transistor P5 is connected to the power supply potential, and the terminal of the transistor p5 is connected to the source of the transistor P6. The pole of 6 is connected to the transistor, and the source of the body N6 is connected to the pole of the transistor N5, and the source of the body N5 is grounded. A signal (10) is input to the gate of the transistor P5, and a signal CKDB is input to the opening of the transistor milk. The output of the magic transmission gate formed by the transistors P1 · N1 is input to the ?! inverter composed of the transistors P2 · N2, the drain of the transistor ?6, and the gate of the transistor N6. Two transistors P3. N3 also constitute the transmission gate (second transmission gate), the drain of transistor P2, the gate of transistor N2, the gate of transistor p6, the gate of transistor N6 And the inputs of the second transmission gate are connected to each other. A signal CKDB is input to the gate of the transistor P3, and a signal CKD is input to the gate of the transistor. Two transistors P4 · N4 constitute an inverter (second inverter). Further, four transistors P7 · P8 · N8 · N7 are connected in series. Specifically, the source of the transistor P7 is connected to the power supply potential, and the drain of the transistor p7 is connected to the source of the transistor P8. The drain of the transistor P8 is connected to the drain of the transistor N8, and the gate of the transistor N8 The source is connected to the drain of the transistor N7, and the source of the transistor is grounded. A signal CKDB is input to the gate of the transistor P7, and a signal CKD is input to the gate of the transistor. The output of the second transmission gate composed of the transistors P3 and N3 is input to the second inverter and the transistor composed of the transistors P4 and N4. The bungee of 8 and the crystal N8 are not. The drain of transistor P4, the drain of transistor N4, and the transistor? The gate of 8 and the gate of transistor N8 are both connected to the input terminal of the buffer BUFF. The output terminal of the buffer BUFF becomes the data output terminal q of D-FF3 1 d. 135476.doc • 28 - 200933587 Here, the connection point between the first transmission gate composed of the transistor P1 · N1 and the first inverter composed of the transistor P2 · N2 is taken as the point a ^ The connection point between the inverter composed of the electric bb body P2 and N2 and the transmission gate composed of the transistor ρ3·Ν3 serves as a point b. Further, a connection point between the transmission gate composed of the transistors P3 and N3 and the inverter composed of the transistors p4 and N4 is referred to as a point c. Further, the connection point between the inverter composed of the transistors ·4 · N4 and the buffer BUFF is taken as the point d. In the D-FF 31d, a pull-up eRu1 is further provided at the point b, and a pull-down resistor Rd1 is provided at the point d. Thereby, even if the noise that causes the level to shift to the High side is received, the buffer bUFF is received. The output signal, that is, the level of the output signal from the D-FF 3 Id is also not easily changed. That is, the pull-up resistor Ru 1 and the pull-down resistor Rd 1 increase the tolerance of the internal D-FF3 1 d to make the level change to the noise of the High side, and further replace the pull-up resistor Rul and pull-down. The resistor Rd1 increases the gate width of the transistor P2 and the transistor N4, or shortens the gate length, thereby increasing the driving ability of the transistor P2 and the transistor N4, so that the inside of the D-FF 31d can be improved in the same manner as described above. It is tolerant to the level of noise that changes the level to the High side. Further, the pull-down resistor Rd1 is provided at the point a, and the pull-up resistor Rui is provided at the point c. Thereby, the tolerance of the noise within the D_FF 31d to the high side can be similarly improved. Fig. 9 is a circuit diagram showing the detailed configuration of the D-FF 31U. D_FF3] u is constructed as follows. In the D-FF3 Id shown in FIG. 8, 'the pull-up resistor Ru1 is set instead of the point b, and the pull-down resistor Rd1 is set at the point d, and the lower 135476 is set at the point b. Doc -29- 200933587 Pull resistor Rd2, set pull-up resistor Ru2 at point d. Therefore, contrary to the D-FF 31d, the d-FF 31u receives the output signal from the buffer BUFF even if the noise is changed to the Low side, that is, the level of the output signal from the D-FF 31U is not easily changed. . That is, the pull-up resistor Ru2& pull-down resistor Rd2 can be used to improve the tolerance of the inside of the D-FF 31U for the noise level shifting to the Low side.

再者’代替設置上拉電阻RU2及下拉電阻Rd2,而增大 電晶體N2及電晶體P4之閘極寬度,或者縮短閘極長度,以 提高電晶體N2及電晶體P4之驅動能力,藉此亦可與上述相 同地提高D-FF3 1 u内部之對於使位準變動至L〇w側之雜訊 之耐受性。 又’於點a處設置上拉電阻!^12 ’於點^處設置下拉電阻Furthermore, instead of providing the pull-up resistor RU2 and the pull-down resistor Rd2, the gate width of the transistor N2 and the transistor P4 is increased, or the gate length is shortened to improve the driving ability of the transistor N2 and the transistor P4. Similarly to the above, the tolerance of the inside of the D-FF3 1 u to the level of the noise on the L〇w side can be improved. Also, set the pull-up resistor at point a! ^12 ′Set pull-down resistor at point ^

Rd2,藉此,亦可同樣地提高D_FF31u内部之對於使位準 變動至Low側之雜訊之耐受性。 又’亦可設為如下構成:於圖!所示之閘極驅動器4中, 將D-FF11替換為D_FF31d。又,於此情形時,亦可設為不 设置下拉電阻Rd之構成。上述任—構成與先前之構成相 比,均可提高對於使位準變動至出叻之雜訊之耐受性。 [實施形態4] 之第4實施形態進行說明, 若根據圖10及圖〗1對本發明 則如下所述。 圑1 〇係表示本實 _ ·〜啊战之1 二問極驅動器44係如下構成:於圖3所示之 24中進而設置移位暫存器W,且代替陶路15而設s 135476.doc •30· 200933587 數電路25 » 移位暫存器10e與移位暫存器1〇d同樣地,具備串級連接 之7個D-FFn,於移位暫存器10e之初段之D-FF11之資料輸 入端子D中輸入有閘極驅動器44之輸入信號ΙΝβ又,於移 位暫存器10e之各D-FF11之時脈端子CK中亦輸入有動作時 脈CLK,且自各D_FF1 ^之資料輸出端子q輸出信號 Q1 e〜Q7e 〇 進而’與移位暫存器l〇d同樣地’於移位暫存器^ 〇e之各 D-FF11之資料輸出端子q上連接有下拉電阻更具體而 言,下拉電阻Rd之一端連接於D_FF11i資料輸出端子Q, 而下拉電阻Rd之另一端接地。 多數電路25具有三個輸入端子a〜C及輸出端子q,於輸 入端子A〜C中之兩個以上為High之情形時,輸出成為Rd2, by this, can also similarly improve the tolerance of the inside of D_FF31u for making the level change to the noise on the Low side. Also, it can be configured as follows: In the gate driver 4 shown, the D-FF 11 is replaced with D_FF 31d. Further, in this case, a configuration in which the pull-down resistor Rd is not provided may be employed. The above-described configuration can improve the tolerance for the noise that causes the level to change to the exit pupil as compared with the previous configuration. [Fourth embodiment] A fourth embodiment will be described. The present invention will be described below with reference to Fig. 10 and Fig. 1.圑1 〇 indicates this fact _ · ~ 啊战1 The two-question driver 44 is configured as follows: In the 24 shown in Fig. 3, the shift register W is further provided, and s 135476 is provided instead of the ceramic road 15. Doc •30· 200933587 Number circuit 25 » The shift register 10e has seven D-FFns connected in series, similar to the shift register 1〇d, in the initial stage of the shift register 10e. The input signal ΙΝβ of the gate driver 44 is input to the data input terminal D of the FF11, and the action clock CLK is also input to the clock terminal CK of each D-FF11 of the shift register 10e, and each D_FF1 ^ The data output terminal q outputs signals Q1 e to Q7e 〇 and further 'like the shift register l 〇 d', the pull-down resistor is connected to the data output terminal q of each D-FF 11 of the shift register 〇e Specifically, one end of the pull-down resistor Rd is connected to the D_FF11i data output terminal Q, and the other end of the pull-down resistor Rd is grounded. The majority of the circuits 25 have three input terminals a to C and an output terminal q. When two or more of the input terminals A to C are High, the output becomes

High ’而於輸入端子a〜C令之兩個以上為Low之情形時, 輸出成為Low。各多數電路25之輸入端子A〜C中輸入有來 自移位暫存器10d之信號Qmd (m為1〜7之整數)、來自移位 暫存器10u之信號Qmu之夂轉信號、以及來自移位暫存器 l〇e之信號Qme。多數電路25將該等輸入信號中之兩個以 上之同一波形的信號作為信號Qm (m為之整數)而輸 出。 藉此,於並未接收到來自外部之雜訊之狀態下,信號 Qmd、信號Qmu及信號Qme均成為同一波形。此處,即便 由於雜訊而引起移位暫存器10d . 1〇u · 1〇e中之任一個誤 動作時’於輸入至多數電路25之信號中,正常波形之信號 135476.doc -31 · 200933587 佔據多數’因此來自多數電路25之信號Qm與未接收到雜 訊之狀態並無不同。如此,亦可提高閘極驅動器44對於雜 訊之耐受性。 再者’較理想的是移位暫存器10d及移位暫存器1〇e配置 於積體電路之分離位置,且電源或GND配線亦彼此分離。 藉此’於閘極驅動器44接收到使位準變動至l〇w側之雜訊 之情形時’可降低移位暫存器10(1· i〇e之雙方產生誤動作 之風險。 圖11係表示多數電路25之具體構成之電路圖。多數電路 25具備二個AND電路25a . 25b . 25c以及OR電路25d。來 自輸入端子A之信號輸入至AND電路25a及AND電路25b, 來自輸入端子B之信號輸入至and電路25b及AND電路 25c,來自輸入端子C之信號輸入至AND電路2讣及and電 路25c。來自各AND電路25a · 25b · 25c之輸出輸入至〇R電 路25d,OR電路25d之輸出端子成為多數電路乃之輸出端 子Q。 再者,圖11所示之構成係多數電路之一例,亦可使用其 他眾所周知之多數電路。又,亦可代替設置多數電路加 設置OR電路,該QR電路亦可構成為輸出信號㈣、信號 Qmu及信號Qme(m為卜7之整數)之邏輯和。 又,本實施形態中,移位暫存器之系統數為3個系統, 但亦可為如下構成,即,設置5個以上之奇數系統之移位 暫存器’以獲取來自各移位暫存器之信號之多數。 [實施形態之總結] 135476.doc -32- 200933587 本發明並不限定於上述各實施形態,可於請求項所示之 範圍内作出各種變更,適當組合不同實施形態所分別揭示 之技術性手段而獲得之實施形態亦包含於本發明之技術性 範圍。 [產業上之可利用性] 本發明可較佳地適用於例如液晶顯示器等之顯示裝置。 . 再者,用以實施發明之最佳形態之項中所提出之具體實 施態樣或者實施例,僅係用以明確本發明之技術内容者, ® 並不應僅限於上述具體例而作出狹義解釋,於本發明之精 神及以下所δ己載之申清專利範圍内,可進行各種變更而實 施。 【圖式簡單說明】 圖1係表示第1實施形態之閘極驅動器之構成之電路圖。 圖2係表示第1實施形態之TFT液晶面板之構成之概略 圖。 ❹ 圖3係表示第2實施形態之閘極驅動器之構成之電路圖。 圖4係表示圖3所示之閘極驅動器未接收到雜訊之通常時 的、來自各正反器及0R電路之信號波形的時序圖。 圖5係表示圓3所示之閘極驅動器接收到使位準變動至 L〇W側之雜訊之時的、來自各正反器及OR電路之信號波形 的時序圖。 圖6係表示本發明之邏輯電路之變形例之電路圖。 圖7係表示第3實施形態之閘極驅動器之構成之電路圖。 圖8係表示構成圖7所示之閘極驅動器之其中一方之移位 135476.doc •33· 200933587 暫存器之正反器的詳情之電路圖。 圖9係表示構成圖7所示之閘極驅動器之另一方之移位暫 存器的正反器之詳情之電路圖。 圖10係表示第4實施形態之閘極驅動器之構成之電路 圖。 圖U係表示設置於圖10所示之閘極驅動器上之多數電路 之詳情的電路圖。 寬路 ❹ 圖12係表示先前之半導體晶片之構成之概略圖。 圖13係表示先前之TFT液晶面板之構成之概略圖。 【主要元件符號說明】 圖14係表示先前之閘極驅動器之構成之電路圖。 1 TFT液晶面板(顯示裝置) 4 、 24 ' 34 、 44 閘極驅動器(掃描信號線驅動 6 閘極線(掃描信號線) 10d ' 1〇e 移位暫存器(第1移位暫存器) l〇d、l〇u、10e 移位暫存器 lOu 移位暫存器(第2移位暫存器) 11 d_FF(正反器) 12 位準偏移器電路 15 OR電路(邏輯電路) 16 and電路(邏輯電路) 25 多數電路 30d 移位暫存器(第1移位暫存器) 30u 移位暫存器(第2移位暫存器) Φ 135476.doc -34- 200933587 31d ' 31u D-FF(正反器) a 點(第4連接點、第8連接點) b 點(第1連接點、第5連接點) BUFF 緩衝器(第1緩衝電路、第2緩衝電路) c 點(第3連接點、第7連接點) CLK 動作時脈(時脈信號) D 資料輸入端子 d ❹ IN 點(第2連接點、第6連接點) 輸入信號 N2 電晶體(第2電晶體、第6電晶體) N4 電晶體(第4電晶體、第8電晶體) P2 電晶體(第1電晶體、第5電晶體) P4 電晶體(第3電晶體、第7電晶體) Q 資料輸出端子 Q1 〜Q7 信號(第3移位脈衝) Qlld 〜Q17d 信號(第1移位脈衝) Q11 u〜Q1 7u 號(第2移位脈衝) Qld〜Q7d 信波(第1移位脈衝) ’ Qle〜Q7e k號(第1移位脈衝) Qlu~Q7u 信號(第2移位脈衝) Rd 下拉電阻 Rdl 下拉電阻(第1下拉電阻) Rd2 下拉電阻(第2下拉電阻) Ru 上拉電阻 135476.doc •35- 200933587When the input terminals a to C are two or more Low, the output becomes Low. The input terminals A to C of each of the plurality of circuits 25 are inputted with a signal Qmd (m is an integer from 1 to 7) from the shift register 10d, a twist signal from the signal Qmu of the shift register 10u, and The signal Qme of the shift register l〇e. Most of the circuits 25 output signals of the same waveform of two or more of the input signals as the signal Qm (m is an integer). Thereby, the signal Qmd, the signal Qmu, and the signal Qme are all in the same waveform without receiving noise from the outside. Here, even if any one of the shift registers 10d. 1〇u · 1〇e is malfunction due to noise, 'in the signal input to the majority circuit 25, the signal of the normal waveform 135476.doc -31 · 200933587 Occupy the majority' so the signal Qm from most circuits 25 is no different from the state in which no noise is received. As such, the resistance of the gate driver 44 to noise can also be improved. Further, it is preferable that the shift register 10d and the shift register 1〇e are disposed at separate positions of the integrated circuit, and the power supply or the GND wiring are also separated from each other. Therefore, when the gate driver 44 receives the noise that causes the level to shift to the side of the l〇w side, the risk of malfunction of the shift register 10 (1·i〇e) can be reduced. A circuit diagram showing a specific configuration of a plurality of circuits 25. The plurality of circuits 25 are provided with two AND circuits 25a. 25b. 25c and an OR circuit 25d. Signals from the input terminal A are input to the AND circuit 25a and the AND circuit 25b, and signals from the input terminal B. The input from the input circuit 25b and the AND circuit 25c, the signal from the input terminal C is input to the AND circuit 2A and the AND circuit 25c. The output from each of the AND circuits 25a, 25b, 25c is input to the 〇R circuit 25d, and the output of the OR circuit 25d. The terminal is a majority of the circuit and the output terminal Q. Further, the configuration shown in Fig. 11 is an example of a plurality of circuits, and other well-known circuits may be used. Alternatively, a plurality of circuits may be provided instead of the OR circuit, and the QR circuit may be provided. It may be configured as a logical sum of the output signal (4), the signal Qmu, and the signal Qme (m is an integer of the data 7.) In the present embodiment, the number of systems of the shift register is three, but the following may be Composition, ie A shift register of five or more odd-numbered systems is provided to acquire a majority of signals from the respective shift registers. [Summary of Embodiments] 135476.doc -32- 200933587 The present invention is not limited to the above In the embodiment, various modifications can be made within the scope of the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments are also included in the technical scope of the present invention. [Industrial Applicability] The present invention is preferably applied to a display device such as a liquid crystal display. The specific embodiments or examples set forth in the preferred embodiments of the invention are merely intended to clarify the invention. The technical content of the product is not limited to the above specific examples and is interpreted in a narrow sense. It can be implemented in various ways within the spirit of the present invention and the scope of the patents as set forth below. Fig. 1 is a circuit diagram showing a configuration of a gate driver of a first embodiment. Fig. 2 is a schematic view showing a configuration of a TFT liquid crystal panel according to a first embodiment. 2 is a circuit diagram showing a configuration of a gate driver of the embodiment. Fig. 4 is a timing chart showing signal waveforms from respective flip-flops and ER circuits when the gate driver shown in Fig. 3 does not receive noise. 5 is a timing chart showing signal waveforms from the respective flip-flops and OR circuits when the gate driver shown by the circle 3 receives the noise that causes the level to shift to the L〇W side. FIG. 6 shows the present invention. Fig. 7 is a circuit diagram showing a configuration of a gate driver according to a third embodiment. Fig. 8 is a diagram showing a shift of one of the gate drivers shown in Fig. 7. 135476.doc • 33 · 200933587 Circuit diagram of the details of the flip-flop of the register. Fig. 9 is a circuit diagram showing the details of the flip-flops constituting the other shift register of the gate driver shown in Fig. 7. Fig. 10 is a circuit diagram showing the configuration of a gate driver of a fourth embodiment. Figure U is a circuit diagram showing details of a plurality of circuits provided on the gate driver shown in Figure 10 . Wide Path ❹ Figure 12 is a schematic view showing the configuration of a conventional semiconductor wafer. Fig. 13 is a schematic view showing the configuration of a conventional TFT liquid crystal panel. [Description of Main Element Symbols] Fig. 14 is a circuit diagram showing the configuration of the prior gate driver. 1 TFT liquid crystal panel (display device) 4, 24' 34, 44 gate driver (scanning signal line drive 6 gate line (scanning signal line) 10d ' 1〇e shift register (first shift register) L〇d, l〇u, 10e shift register lOu shift register (2nd shift register) 11 d_FF (reverse) 12-bit shift circuit 15 OR circuit (logic circuit) 16 and circuit (logic circuit) 25 Most circuits 30d Shift register (1st shift register) 30u Shift register (2nd shift register) Φ 135476.doc -34- 200933587 31d ' 31u D-FF (reactor) a point (fourth connection point, eighth connection point) b point (first connection point, fifth connection point) BUFF buffer (first buffer circuit, second buffer circuit) Point c (3rd connection point, 7th connection point) CLK Operation clock (clock signal) D Data input terminal d ❹ IN point (2nd connection point, 6th connection point) Input signal N2 Transistor (2nd electric) Crystal, 6th transistor) N4 transistor (4th transistor, 8th transistor) P2 transistor (1st transistor, 5th transistor) P4 Body (3rd transistor, 7th transistor) Q Data output terminal Q1 to Q7 signal (3rd shift pulse) Qlld to Q17d signal (1st shift pulse) Q11 u~Q1 7u (2nd shift pulse Qld~Q7d signal wave (first shift pulse) 'Qle~Q7e k number (first shift pulse) Qlu~Q7u signal (second shift pulse) Rd pull-down resistor Rd1 pull-down resistor (first pull-down resistor) Rd2 Pull-down resistor (2nd pull-down resistor) Ru Pull-up resistor 135476.doc •35- 200933587

Rul 上拉電阻(第1上拉電阻)Rul pull-up resistor (1st pull-up resistor)

Ru2 上拉電阻(第2上拉電阻)Ru2 pull-up resistor (2nd pull-up resistor)

-36- 135476.doc-36- 135476.doc

Claims (1)

200933587 十、申請專利範固: 一種掃描信號線驅動電路,其具備串級連接有M(M為2 以上之整數)個正反器之第1移位暫存器’該第!移位暫存 益係將自外部輸入之輸人信號與時脈信號同步地依序傳 :至後段之正反器,並自各正反器之資料輸出端子輸出 1移位脈衝,藉此對顯示晝面之掃描信號線進行驅 動’其特徵在於: ❹ 下拉電阻連接於上述正反器中之至少一個正反器之資 料輸出端子。 2.如请求項1之掃描信號線驅動電路,其中更具備串級連 接有Μ個正反器之第2移位暫存器與m個邏輯電路, 4第2移位暫存器係、將上述輸人信號之反轉信號與上 述時脈錢同步地料料錢段之正反^,並自^正 反器之資料輸出端子輸出第2移位脈衝, 上拉電阻連接於上述第2移位暫存器之正反_中之至 少一個正反器之資料輸出端子, 上述邏輯電路分別將來自上述第1移位暫存器之第N(N 為1以上Μ以下之整數)段之正反器之第!移位脈衝、與來 自上述第2移位暫存器之㈣段之正反器之第⑼位脈衝 之反轉脈衝的邏輯和,作為第3移位脈衝而輸出, 3· 藉由該第3移位脈衝而對上述掃描信號線進行驅動。 7種掃描信號線驅動電路,其具備串級連接有峨為2 Τ上之整數)個正反器之第】移位暫存器,該第旧位暫存 器係將自外„卩輸人之輸人信號與時脈信號同步地依序傳 135476.doc 200933587 送至後段之正反器’並自各正反器之資料輸出端子輸出 第1移位脈衝,藉此對顯示畫面之掃描信號線進行驅 動,其特徵在於: 上述正反器中之至少-個正反器係具備構成該正反器 之資料輸入端子之第1傳輸閘極、第丨反相器、第2傳輸 閘極、第2反相器及構成資料輸出端子之第丨緩衝電路, • 上述資料輸入端子、第1傳輸閘極、第1反相器、第2傳 輸閘極、第2反相器及第丨緩衝電路係依此順序連接, ® 於上述第1反相器與上述第2傳輸閘極之間的第丨連接 點處設置有第1上拉電阻, 於上述第2反相器與上述第丨緩衝電路之間的第2連接 點處設置有第1下拉電阻。 4. 如請求項3之掃描信號線驅動電路,其中上述第1上拉電 阻代替設置於上述第丨連接點處,而設置於上述第2傳輸 閘極與上述第2反相器之間的第3連接點處, Q 上述第1下拉電阻代替設置於上述第2連接點處,而設 置於上述第1傳輸閘極與上述第丨反相器之間的第4連接 點處。 5. 如4求項3或4之掃描信號線驅動電路,其中上述第丄反 相器係由輸出高位準之信號之第1電晶體、與輸出低位 準之信號之第2電晶體所構成, 上述第2反相器係由輸出高位準之信號之第3電晶體、 與輸出低位準之信號之第4電晶體所構成, 代替设置上述第1上拉電阻及第1下拉電阻,而將上述 135476.doc 200933587 第1電晶體之驅動能力設定得高於上述第2電晶體之驅動 能力’且將上述第4電晶體之驅動能力設定得高於上述 第3電晶體之驅動能力。 6·如請求項3或4之掃描信號線驅動電路,其中更包括串級 連接有Μ個正反器之第2移位暫存器與μ個邏輯電路, 該第2移位暫存器係將上述輸入信號之反轉信號與上 述時脈信號同步地依序傳送至後段之正反器,並自各正 反器之資料輸出端子輸出第2移位脈衝, 上述第2移位暫存器之正反器中之至少一個正反器, 係具備構成該正反器之資料輸入端子之第3傳輸閘極、 第3反相器、第4傳輸閘極、第4反相器及構成資料輸出 端子之第2緩衝電路,上述資料輸入端子、第3傳輸閘 極、第3反相器、第4傳輸閘極、第4反相器及第2緩衝電 路係依此順序連接, 於上述第3反相器與上述第4傳輸閘極之間的第5連接 點處設置有第2下拉電阻, 於上述第4反相器與上述第2緩衝電路之間的第6連接 點處設置有第2上拉電阻, 上述邏輯電路係分別將來自上述第丨移位暫存器之第 Ν(Ν為1以上Μ以下之整數)段之正反器之第i移位脈衝、 與來自上述第2移位暫存器之第1^段之正反器之第2移位 脈衝之反轉脈衝的邏輯和,作為第3移位脈衝而輸出, 藉由該第3移位脈衝而對上述掃描信號線進行驅動。 7.如請求項6之掃描信號線驅動電路,其中上述第2下拉電 135476.doc 200933587 阻代替設置於上述第5連接點處,而設置於上述第4傳輸 閘極與上述第4反相器之間的第7連接點處, 上述第2上拉電阻代替設置於上述第6連接點處,而設 置於上述第3傳輸閘極與上述第3反相器之間的第8連接 點處。 8.如請求項6之掃描信號線驅動電路,其中上述第3反相器 係由輸出高位準之信號之第5電晶體、與輸出低位準之 信號之第6電晶體所構成, ❹200933587 X. Patent application: A scanning signal line driver circuit having a first shift register with M (M is an integer of 2 or more) flip-flops connected in series ’! The shift temporary storage system transmits the input signal from the external input in synchronization with the clock signal in sequence: to the flip-flop of the latter stage, and outputs a shift pulse from the data output terminal of each flip-flop to thereby display The scan signal line of the face is driven. The feature is that: ❹ A pull-down resistor is connected to the data output terminal of at least one of the above-mentioned flip-flops. 2. The scanning signal line driving circuit of claim 1, wherein the second shift register and the m logic circuits are connected in series with a flip-flop, and the fourth shift register is The inversion signal of the input signal is synchronized with the clock of the clock, and the second shift pulse is output from the data output terminal of the positive/negative device, and the pull-up resistor is connected to the second shift. The data output terminal of at least one of the positive and negative of the bit register, the logic circuit respectively is positive from the Nth (N is an integer of 1 or more and Μ) from the first shift register The counter! The logical sum of the shift pulse and the inverted pulse of the (9)th pulse from the flip-flop of the (fourth) segment of the second shift register is output as the third shift pulse, and the third is performed by the third The scanning signal line is driven by shifting the pulse. 7 kinds of scanning signal line driving circuits, which have the first shift register which is connected in series with an integer of 2 Τ), and the old bit register is to be input from the outside. The input signal and the clock signal are sequentially transmitted in sequence 135476.doc 200933587 to the rear of the forward and reverse device' and output the first shift pulse from the data output terminals of the respective flip-flops, thereby scanning the signal line of the display screen Driving, wherein at least one of the flip-flops includes a first transmission gate, a second inverter, and a second transmission gate that constitute a data input terminal of the flip-flop 2 inverter and a 丨 snubber circuit constituting the data output terminal, • the above data input terminal, the first transmission gate, the first inverter, the second transmission gate, the second inverter, and the second buffer circuit Connected in this order, the first pull-up resistor is disposed at a second connection point between the first inverter and the second transmission gate, and the second inverter and the second buffer circuit are The first pull-down resistor is provided at the second connection point. 4. If the request is a scanning signal line driving circuit of the third, wherein the first pull-up resistor is provided at the third connection point between the second transmission gate and the second inverter instead of being disposed at the second connection point; Q: The first pull-down resistor is provided at the second connection point instead of the second connection point, and is provided at a fourth connection point between the first transmission gate and the third inverter. The scanning signal line driving circuit, wherein the second inverter is composed of a first transistor that outputs a high level signal and a second transistor that outputs a low level signal, and the second inverter is output. A third transistor having a high level signal and a fourth transistor outputting a low level signal, instead of providing the first pull-up resistor and the first pull-down resistor, the 135476.doc 200933587 first transistor The driving capability is set higher than the driving capability of the second transistor described above and the driving ability of the fourth transistor is set higher than the driving capability of the third transistor. 6. The scanning signal line of claim 3 or 4 Drive circuit, which includes The second shift register and the μ logic circuit are connected to the flip-flop, and the second shift register sequentially transmits the inverted signal of the input signal to the clock signal in synchronization with the clock signal. a second-stage shift pulse is outputted from the data output terminal of each of the flip-flops, and at least one of the flip-flops of the second shift register is provided with the flip-flop a third transmission gate of the data input terminal, a third inverter, a fourth transmission gate, a fourth inverter, and a second buffer circuit constituting the data output terminal, the data input terminal, the third transmission gate, and the The inverter, the fourth transmission gate, the fourth inverter, and the second buffer circuit are connected in this order, and are disposed at a fifth connection point between the third inverter and the fourth transmission gate. a second pull-down resistor is provided at a sixth connection point between the fourth inverter and the second buffer circuit, and the logic circuit is respectively provided from the second shift register The ith shift pulse of the flip-flop of the Ν (Ν is an integer below 1) The logical sum of the inversion pulse of the second shift pulse from the flip-flop of the first segment of the second shift register is output as the third shift pulse, and the third shift pulse is used. The above scanning signal line is driven. 7. The scanning signal line driving circuit of claim 6, wherein the second pull-down power 135476.doc 200933587 is provided instead of the fifth connection point, and is disposed at the fourth transmission gate and the fourth inverter. The seventh pull-up resistor is provided at the eighth connection point between the third transfer gate and the third inverter instead of the sixth connection point. 8. The scanning signal line driving circuit of claim 6, wherein the third inverter is composed of a fifth transistor that outputs a signal of a high level and a sixth transistor that outputs a signal of a low level, ❹ 上述第4反相器係由輸出高位準之信號之第7電晶體、 與輸出低位準之信號之第8電晶體所構成, 代替設置上述第2上拉電阻及第2下拉電阻,而將上述 第6電日日體之驅動能力設定得高於上述第$電晶體之驅動 月b力且將上述第7電晶體之驅動能力設定得高於上述 第8電晶體之驅動能力。 9. 一種掃描信號線驅動電路,其特徵在於: 具備串級連接有M(M為2以上之整數)個正反器之至少 一個第1移位暫存器、串級連接有Μ個正反器之至少一個 第2移位暫存器及Μ個多數電路, 數之個數舆上述_位暫存器之個 述第1移位暫存器係將自外部輸入之輸 .....〜调八’|§現ja 脈f號同步地依序傳送至後段之正反n,並自各正^ 之為料輸出端子輸出第1移位脈衝, 下拉電阻連接於上述第!移位暫存器之正反器中之 135476.doc 200933587 9個正反器之資料輸出端子, 上述第2移位暫存器係將上述輸入信號之反轉信號與 上述時脈信號同步地依序傳送至後段之正反器,並自各 正反器之資料輸出端子輸出第2移位脈衝, 丨拉電阻連接於上述第2移位暫存器之正反器中之至 少一個正反器之資料輸出端子, 將來自上述第i移位暫存器之第卿為^以上Μ以下之 )段之正反器之第1移位脈衝、與來自上述第2移位暫 #器之第Ν段之正反器之第2移位脈衝的反轉脈衝,輸入 至上述多數電路之每—個中, 上述夕數電路係選擇所輸人之脈衝中數量較多之脈 衝丄並將選擇結㈣為第3移位脈衝而輸出, 藉由》亥第3移位脈衝而對顯示晝面之掃描信號線進行 10.如 '求項9之掃描信號線驅動電路,其中於設置有複數 參冑上4第1移位暫存器或上述第2移位暫存器之情形,複 數個第1移位暫存器或者第2移位暫存器彼此並非相接近 且不使電源配線及GND配線共用化。 種不裝置,其具備掃描信號線驅動電路,該掃描传 號線驅動電路具備串級連接有寧為2以上之整數)個I 反器之第1移位暫存哭, 器該第1移位暫存器係將自外部輪 入之輸人㈣與時脈信_步地依序傳送至後段之正反 器,並自各正反器之杳 你 之貝枓輪出端子輸出第1移位脈衝, 藉此對顯示畫面之掃描信號線進行驅動,且下拉電阻係 135476.doc 200933587 連接於上述正反器中之至少一個正反器之資料輸出端 子。The fourth inverter is composed of a seventh transistor that outputs a high-level signal and an eighth transistor that outputs a signal having a low level, instead of providing the second pull-up resistor and the second pull-down resistor. The driving ability of the solar cell on the sixth electric day is set higher than the driving month b force of the above-mentioned first transistor, and the driving ability of the seventh transistor is set higher than the driving ability of the eighth transistor. A scanning signal line driving circuit, comprising: at least one first shift register in which M (M is an integer of 2 or more) flip-flops are connected in series, and the cascade connection has one positive and negative At least one second shift register and one of a plurality of circuits, the number of which is the number of the above-mentioned _bit register, the first shift register is input from the external input ..... 〜调八'|§ Now the ja pulse f is synchronously transmitted to the positive and negative n of the latter stage, and outputs the first shift pulse from the output terminal of each positive ^, and the pull-down resistor is connected to the above-mentioned first shift register In the flip-flop of the device, the 135476.doc 200933587 data output terminal of the nine flip-flops, the second shift register transmits the inverted signal of the input signal to the subsequent segment in synchronization with the clock signal. a flip-flop device, and outputting a second shift pulse from a data output terminal of each of the flip-flops, wherein the pull-up resistor is connected to a data output terminal of at least one of the flip-flops of the second shift register, The positive and negative of the segment from the above-mentioned i-th shift register The first shift pulse and the inversion pulse of the second shift pulse from the flip-flop of the second stage of the second shift register are input to each of the plurality of circuits, and the circuit is Selecting a larger number of pulses in the pulse of the input person and outputting the selected junction (4) as the third shift pulse, and performing the scanning signal line on the display surface by the third shift pulse of the Hei 10. The scan signal line drive circuit of claim 9, wherein the plurality of first shift registers or the plurality of first shift registers are provided in the case where the plurality of first shift registers or the second shift registers are provided on the plurality of parameters The two shift registers are not close to each other and do not share the power supply wiring and the GND wiring. The device does not have a scanning signal line driving circuit, and the scanning signal line driving circuit has a first shift temporary crying which is connected in series with an integer of 2 or more integers, and the first shift is performed. The register is transmitted from the external input (4) and the clock signal to the front and back of the inverter, and the first shift pulse is output from the front and back of each of the forward and reverse devices. Thereby, the scanning signal line of the display screen is driven, and the pull-down resistor system 135476.doc 200933587 is connected to the data output terminal of at least one of the above-mentioned flip-flops. 135476.doc135476.doc
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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102099548B1 (en) * 2008-11-28 2020-04-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device and electronic device including the same
JP5428560B2 (en) * 2009-06-16 2014-02-26 凸版印刷株式会社 Power circuit
TWI417852B (en) * 2009-07-06 2013-12-01 Himax Tech Ltd Liquid crystal display and driving circuit thereof
US9715845B2 (en) * 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
TWI413040B (en) * 2009-12-10 2013-10-21 Au Optronics Corp Pixel array
JP5404584B2 (en) 2010-11-19 2014-02-05 株式会社東芝 Semiconductor memory device
DE102011004310B3 (en) * 2011-02-17 2012-04-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Shift Register and On-Off-Many Shift Registers
FR2982701B1 (en) * 2011-11-16 2014-01-03 St Microelectronics Crolles 2 MEMORY DEVICE
KR101912832B1 (en) 2011-11-24 2018-10-30 삼성디스플레이 주식회사 Display device including optical sensor
CN102737580B (en) * 2012-06-29 2015-06-17 昆山工研院新型平板显示技术中心有限公司 Active matrix organic light emitting diode (AMOLED) display panel
TWI511442B (en) * 2012-12-24 2015-12-01 Novatek Microelectronics Corp Data control circuit
CN104282341B (en) * 2014-10-27 2017-12-29 南开大学 Microdisplay on silicon integrates asynchronous transmission shift-register circuit and implementation method
US11074879B2 (en) * 2018-09-30 2021-07-27 HKC Corporation Limited Drive circuit of display device, display device and display panel

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4013901A (en) * 1974-02-19 1977-03-22 Texas Instruments Incorporated Stacked logic design for I2 L watch
US5569807A (en) * 1992-05-01 1996-10-29 Phillips Petroleum Company Isoparaffin-olefin alkylation
JPH0667209A (en) * 1992-08-24 1994-03-11 Sharp Corp Circuit for driving display device
JPH06202588A (en) * 1992-12-29 1994-07-22 Canon Inc Shift register and liquid crystal display device using it
JPH07287555A (en) * 1994-04-18 1995-10-31 Casio Comput Co Ltd Liquid crystal display device
JP3821862B2 (en) * 1994-09-06 2006-09-13 株式会社半導体エネルギー研究所 Method of operating drive circuit of active matrix display device
US5956008A (en) * 1994-09-06 1999-09-21 Semiconductor Energy Laboratory Co., Driver circuit for active matrix display and method of operating same
JPH1186586A (en) * 1997-09-03 1999-03-30 Furontetsuku:Kk Shift resistor device and display device
JP2003121871A (en) * 2001-10-19 2003-04-23 Sony Corp Liquid crystal display device and portable terminal device using the same
JP4593071B2 (en) * 2002-03-26 2010-12-08 シャープ株式会社 Shift register and display device having the same
US6593801B1 (en) * 2002-06-07 2003-07-15 Pericom Semiconductor Corp. Power down mode signaled by differential transmitter's high-Z state detected by receiver sensing same voltage on differential lines
KR100543197B1 (en) * 2003-08-25 2006-01-20 주식회사 하이닉스반도체 Data output driver
TWI222618B (en) * 2003-10-28 2004-10-21 Elan Microelectronics Corp Fine-tuning device and method for the contrast voltage of LCD
JP2007235680A (en) * 2006-03-02 2007-09-13 Rohm Co Ltd Register circuit, semiconductor device, and electric apparatus

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