TW200931613A - Wiring board ready to slot - Google Patents

Wiring board ready to slot Download PDF

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Publication number
TW200931613A
TW200931613A TW097100754A TW97100754A TW200931613A TW 200931613 A TW200931613 A TW 200931613A TW 097100754 A TW097100754 A TW 097100754A TW 97100754 A TW97100754 A TW 97100754A TW 200931613 A TW200931613 A TW 200931613A
Authority
TW
Taiwan
Prior art keywords
plating
substrate
slotted
fingers
substrate body
Prior art date
Application number
TW097100754A
Other languages
English (en)
Other versions
TWI365523B (en
Inventor
Wen-Jeng Fan
Original Assignee
Powertech Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powertech Technology Inc filed Critical Powertech Technology Inc
Priority to TW097100754A priority Critical patent/TWI365523B/zh
Priority to US12/123,269 priority patent/US7919715B2/en
Publication of TW200931613A publication Critical patent/TW200931613A/zh
Application granted granted Critical
Publication of TWI365523B publication Critical patent/TWI365523B/zh

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H05K3/242—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus characterised by using temporary conductors on the printed circuit for electrically connecting areas which are to be electroplated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/09063—Holes or slots in insulating substrate not used for electrical connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/17—Post-manufacturing processes
    • H05K2203/175—Configurations of connections suitable for easy deletion, e.g. modifiable circuits or temporary conductors for electroplating; Processes for deleting connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

200931613 九、發明說明： 【發明所屬之技術領域】 本發明係有關於印刷電路板’特別係有關於一種可 開槽式線路基板（substrate)，適用於窗口型半導體封裝。 【先前技術】 窗口型球格陣列封裝構造（Window Ball Grid Array，WBGA)係為一種常見的半導體裝置，採用具有 打線槽孔之線路基板作為晶片載體，通常該基板之上表 ❹ 面用以承載半導體晶片等元件，該基板之下表面係用以 接合如銲球之外部端子’該基板之下表面係另設有接 指’並藉由打線技術形成複數個銲線，通過打線槽孔以 電性連接晶片至基板之接指。 請參閱第1圖所示’習知一種窗口型球格陣列封裝 構造係以一基板100作為晶片載體。該基板1〇〇係主要 包含一基板本體110、複數個接指120以及複數個外接 塾160。該基板本體110係具有一上表面ill、一下表 © 面112以及一貫穿該上表面111至該下表面112之打線 槽孔114。該些接指120係設置於該基板本體11〇之該 下表面11 2並排列於該打線槽孔11 4之兩側。該些外接 墊160係設置於該基板本體110之該下表面112。 請再參閱第1圖所示，習知窗口型球格陣列封裝構 造另包含一晶片10、複數個銲線20、一封膠體3〇以及 複數個銲球40。該晶片1〇係設置於該基板本體11〇之 該上表面111並具有複數個銲墊11’另以該些打線形成 6 200931613 之銲線20通過該打線槽孔114連接該些銲塾11至該些 接指120«該封膠體30係密封該晶片1〇與該些銲線 20°該些鮮球40係接合至該些外接墊160，以使該窗 口型球格陣列封裝構造可表面接合至一外部印刷電路 板（圖中未緣出）。 請參閱第2圖所示，每一基板1〇〇在未單體化分離 前係排列於一基板條5 0上’該基板條5 0係具有複數個 切割道51，用以定義出每一基板丨〇〇的尺寸。在基板 0 設計時通常會先在該基板100之該些接指120表面電鑛 上錄/金或其它電鍍層，以防止該些接指丨2〇表面發生 氧化’並可以幫助該些接指12〇與該些銲線20的接合 強度’之後再切割以形成該打線槽孔丨丨4。第3圖係繪 示該基板在未切割出該打線槽孔時的表面線路型態。該 基板本體110之該下表面112係包含有一開槽區113(即 該打線槽孔114)。為了對該些接指12〇表面進行電鍍製 程’該基板本體110之該下表面112係設有一穿過該開 © 槽區113之電鍍匯流線150以及複數個電鍍速接線 140,其中該些電鍍連接線14〇係連接該電鍍匯流線150 與該些接指120’以便於在該些接指i 2〇表面形成電鍵 層。由於該些電鍍連接線140在該開槽區113内之線段 有一長度’故具有不利於切割之彈性。因此，在切割該 開槽區113時，會有拉扯該些電鍍連接線140之現象’ 導致該些電鍍連接線14〇在該開槽區113之邊緣的殘留 部分常會產生切割毛邊與位移。因此，原本應各自電性 7 200931613 獨立之該些接指120’則會受切割毛邊與位移影響造成 短路現象。此外，再如第3圖所示，依據該些接指12〇 的位置不同變化，位於該開槽區113兩側邊之電鍍連接 線I40係垂直地連接至該直線狀之電鍍匯流線150，故 左右兩側電鍍連接線140會有參差不齊的間隔。因此， 在電鍍時的電流密度無法平均分配到每一電鍍連接線 140，會造成每一接指12〇表面之電鍍厚度不相同，因 而導致了不佳的電鐘品質。 ❹ 【發明内容】 本發明之主要目的係在於提供一種可開槽式線路基 板，藉以縮短電鍍連接線在開槽區内之長度，以避免開槽後 殘留於基板之電鍍連接線產生切割毛邊與位移。此外，可以 並聯方式均分電流，藉以改善接指表面之電鍍品質。 本發明的目的及解決其技術問題是採用以下技術方 案來實現的。依據本發明之一種可開槽式線路基板，主 要包含一基板本體、複數個接指、一電鍍匯流框以及複數個 ® 電鑛連接線。該基板本體係具有一上表面以及一下表面，其 中該下表面係包含一開槽區》該些接指係設置於該基板本體 之該下表面並鄰近地位於該開槽區之外。該電鍍匯流框係設 置於該基板本體之該下表面並位於該開槽區之内。該些電鑛 連接線係設置於該基板本體之該下表面並連接該些接指至 該電鍍匯流框。其中，該電鍍匯流框相對於該些接指更鄰近 於該開槽區之邊緣》 本發明的目的及解決其技術問題還可採用以下技術 8 200931613 措施進一步實現。 在前述的可開槽式線路基板中，該基板本體係可為 一核心層。 在前述的可開槽式線路基板中，該電鍍匯流框之長度 係可小於該開槽區，並且該電鍍匯流框之至少一端可連接 有一電鍍匯流線。 在前述的可開槽式線路基板中，可另包含有複數個 外接墊，其係設置於該基板本體之該下表面。 〇 在前述的可開槽式線路基板中，該些外接墊係可為 圓形接球墊。 在前述的可開槽式線路基板中，該些接指、該電鍍匯 流框與該些電鍍連接線係可形成於同一線路層。 在前述的可開槽式線路基板中，該電鍍匯流框鄰近 於該開槽區之邊緣之部位係可為兩條等長的平行線。 【實施方式】 依據本發明之一具體實施例，揭示一種可開槽式線 ❹路基板。通常線路基板係作為半導體裝置的晶片載體， 用以連結元件整合其整體功能’而可開槽式線路基板則 係在基板本體開設貫穿基板本體之打線槽孔，以供電性 連接元件之通過’故可進一步應用至窗口型球格陣列封 裝構造（Window Ball Grid Array，WBGA)。請參閱第 4 圖所示’複數個可開槽式線路基板200係矩陣排列於一 基板條60上，該基板條60係具有複數個切割道61， 其係用以定義出該些可開槽式線路基板2 〇〇之尺寸。該 9 200931613 些可開槽式線路基板200可依實際需要可以是一單層 線路基板或是多層線路基板。 請參閱第5及6圖所示，該可開槽式線路基板2〇〇 主要包含一基板本體210、複數個接指22〇、_電鑛匯 流框230以及複數個電鍍連接線24〇。該基板本體 係具有一上表面211以及一下表面212，其中該下表面 212係包含一開槽區213，作為後續製作貫穿該上表面 211與該下表面212之打線槽孔的區域。通常該基板本 〇 體210係為一核心層，或是包含有複數個核心層與至少 一金屬層之組合板件，其中核心層之材質可為玻璃纖維 強化含浸樹脂、或環氧樹脂、聚亞醯胺等介電材料。在 此所指之「上表面」係用以設置晶片之表面，「下表面」 係可作為封裝外露表面，用以植接外接端子，如銲球 等’以達成對外輸出或輸入之外部電性連接。在基板電 鐘之後製程中，該開槽區213可開設形成一貫穿該上表 面211至該下表面212之打線槽孔（圖中未繪出）。請參 閱第5圖所示’該些接指2 2〇係設置於該基板本體21〇 之該下表面2 1 2並鄰近地位於該開槽區2 1 3之外，即排 列在該開槽區2 1 3之兩對稱長側邊緣之外側。通常，該 些接指220係在半導體封裝之電性連接製程中，可以接 合複數個例如金線之銲線或其它電性連接元件，以電性 連接至晶片之對應銲墊，而形成晶片與基板之間的電路 互連。 請參閱第5圖所示，該電鍍匯流框230係設置於該 10 200931613 基板本體210之該下表面212並位於該開槽區213之 内。該電鍍匯流框230係包含有一第一平行線231與一 第一平行線232。在本發明中所稱之「電鍍匯流框230 位於該開槽區213之内」並非僅限定整個電鍍匯流框 230必須縮限在該開槽區213之内，而是該電鍵匯流框 230之兩平行線231與232之某一線段或全部位於該開 槽區213之内即可。請再參閱第5圖所示，該些電鍍連 接線240係設置於該基板本體21〇之該下表面212並連 〇 接該些接指220至該電艘匯流框230。在本實施例中但 不限定地’如第5圖所示，該開槽區213係涵蓋該電鑛 線匯流框230以及該些電鐘連接線240延伸至該電鍍線 匯流框230之局部線段》該電鍍匯流框230之長度係小於 該開槽區213，並且該電鍍匯流框230之至少一端（在該 第一平行線23 1與該第二平行線23 2之匯集處）連接有 一電鍍匯流線250。在本實施例中，該些接指220、該電 鍍匯流框230與該些電鍍連接線24〇係可形成於同一線路 ® 層’又該線路層係形成於該基板本體210之該下表面 212。在電鍵過程中，利用該電鑛匯流框230與該些電 鍍連接線240，以便於在該些接指220表面電鍍上鎳/ 金或其他電鍍層，用以增強該些接指220之鲜接強度。 請再參閱第5及6圖所示，該電鍍匯流框230相對 於該些接指220更鄰近於該開槽^ 213之邊緣’其中該 電鍍匯流框230鄰近於該開槽區213之邊緣之部位係即 為該第一平行線23 1與該第二平行線232，較佳為兩者 π 200931613 等長，以維持較為平衡的電鍍電流密度。 因此’利用該電鍍匯流框230可以縮短該些電鐘連 接線240在該開槽區2 1 3内之長度，得到較佳的切割支 撐，以避免開槽後殘留於該基板200之該些電錢連& _ 240產生切割毛邊。另可有效防止在開槽過程中，刀具 切割到該些電鍍連接線240時，產生拉扯造成位移而導 致該些電鍍連接線240訊號短路之問題，並可避免造成 殘留於該基板之該些電鍍連接線240的剝落。如此一 〇 來’即可改善因產生切割毛邊與位移所造成之相鄰線路 短路現象，以提升線路基板200之產品良率。此外，該 電鍍匯流框230可將電流平均分為兩端並透過該些電 鍍連接線240將電流傳導至該些接指220，因此可以並 聯方式均分電流以改善該些接指22〇表面之電鐘品 質’而不會有電鍍不平均而使電鍍層厚度差異過大之問 題0 請參閱第4圖所示’在本實施例中，該開槽式線路 暴板係可另包含有複數個外接墊26〇，其係設置於該基 板本體210之該下表面212»該些外接墊260係可為格 狀陣列或是雙/多排排列。該些接指220可利用該基板 本體210之線路圖案，以電性連接至至少一部分之該些 外接塾260 ’以供對外電性傳輸。該些外接墊26〇係可 為圓形接球墊《具體而論，請參閱第6圖所示，該基板 本體210之該下表面212可更形成有一防銲層270,其 係局部覆蓋該些接指220與該些外接墊260 »該防銲層 12 200931613 它具防銲特 2 70係可為一銲罩層（或可稱之為綠漆）或其 性之表面保護層。 以上所述，僅是本發明的較佳實施例而已，並非對 本發明作任何形式上的限制，本發明技術方案範圍當依 所附申》月專利冑圍為準。任何熟悉本專業的技術人員可 利用上述揭示的技術内容作出些許更動或修飾為等同 二化的h實施例，凡是未脫離本發明技術方案的内 谷，依據本發明的技術實質對以上實施例所作的任何簡 ❹ 單修改、等同變化舆修飾，均仍屬於本發明技術方案的 範圍内。 【圖式簡單說明】 第1圖：習知窗口型球格陣列封裝構造之截面示意圖。 第2圖：習知窗口型球格陣列封裝構造所使用之複數個 基板形成於一基板條之下表面示意圖。 第3圖·緣示習知基板在未切割出打線槽孔時之局部下 表面線路型態示意圖。 ⑩ 第4圖：依據本發明之一具體實施例，一種可開槽式線 路基板形成於基板條之下表面示意圖。 第5圖：依據本發明之一具體實施例，該可開槽式線路 基板之局部下表面線路型態示意圖。 第6圖：依據本發明之一具艘實施例，該可開槽式線路 基板之截面示意圖》 【主要元件符號說明】 10 晶片 11銲墊 20 銲線 13 200931613 30 封膠體 40 銲球 50 基板條 51 切割道 60 基板條 61 切割道 100 基板 110 基板本體 111上表面 112 下表面 113 開槽區 114打線槽孔 120 接指 140電鍍連接線 150 電鍍匯流線 160 外接墊 〇 200 可開槽式線路基板 210 基板本體 211上表面 212 下表面 213 開槽區 220接指 230 電鍍匯流框 231 第一平行線 232第二平行線 240 電鍍連接線 2 5 0電鐘匯流線 260 外接墊 270 防銲層

Claims (1)

  1. 200931613 十、申請專利範圍： 1、 一種可開槽式線路基板，包含： 一基板本鱧，係具有一上表面以及一下表面，其中該下 表面係包含一開槽區； 複數個接指’其係設置於該基板本體之該下表面並鄰近 地位於該開槽區之外； 一電鍍匯流框，其係設置於該基板本體之該下表面並位 於該開槽區之内；以及 Ο 複數個電鍍連接線’其係設置於該基板本體之該下表面 並連接該些接指至該電鍍匯流框； 其中’該電鍍匯流框相對於該些接指更鄰近於該開槽區 之邊緣。 2、 如申請專利範圍第丨項所述之可開槽式線路基板，其中 該基板本體係為一核心層。 3、 如申請專利範圍第丨項所述之可開槽式線路基板，其中 該電鍍匯流框之長度係小於該開槽區，並且該電鍍匯流 © 框之至少一端連接有一電鍍匯流線。 4、 如申請專利範圍第丨項所述之可開槽式線路基板，另包 含有複數個外接墊’其係設置於該基板本體之該下表面。 5、 如申請專利範圍第4項所述之可開槽式線路基板，其中 該些外接墊係為圓形接球墊。 6、 如申請專利範圍第1項所述之可開槽式線路基板，其中 該些接指、該電鍍匯流框與該些電鍍連接線係形成於同 一線路層。 15 200931613 7、如申請專利範圍第1項所述之可開槽式線路基板，其中 該電鍍匯流框鄰近於該開槽區之邊緣之部位係為兩條等 長的平行線。
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