TW200923584A - Photosensitive resin composition for interlayer insulation film - Google Patents

Photosensitive resin composition for interlayer insulation film Download PDF

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Publication number
TW200923584A
TW200923584A TW097145815A TW97145815A TW200923584A TW 200923584 A TW200923584 A TW 200923584A TW 097145815 A TW097145815 A TW 097145815A TW 97145815 A TW97145815 A TW 97145815A TW 200923584 A TW200923584 A TW 200923584A
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Taiwan
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group
structural unit
resin composition
insulating film
photosensitive resin
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TW097145815A
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Chinese (zh)
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TWI392970B (en
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Taku Nakao
Ken Miyagi
Yasuaki Sugimoto
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Tokyo Ohka Kogyo Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031Organic compounds not covered by group G03F7/029
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

This invention provides a photosensitive resin composition for an interlayer insulation film, comprising an alkali soluble resin (A) and a sensitizer (B). The alkali soluble resin (A) comprises a copolymer (A1) having a structural unit (a1) including an acidic group, a structural unit (a2) including a cross-linked group, and a structural unit (a3) including alkoxysilane. The structural unit (a3) preferably is represented by formula (a-3), wherein R4 represents hydrogen or methyl, R5 represents alkylene with 1 to 5 carbons, R6, R7, and R8 can be the same or different and represent alkyl or alkoxy with 1 to 5 carbons, and at least one of R6, R7, and R8 is alkoxy.

Description

200923584 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種層間絕緣膜用感光性樹脂組成 【先前技術】 自先前以來,於液晶顯示元件、積體電路元件、 攝像元件等電子零件中,形成有配置成層狀之用以使 之間絕緣而設置之層間絕緣膜等。該層間絕緣膜一直 係使用感光性樹脂組成物形成(例如,參照專利文獻 4 ) ° 例如,TFT (薄膜電晶體)型液晶顯示元件一般係 下之步驟來製造。於玻璃基板上設置偏光板,形成透 電電路層以及 T F T,然後以層間絕緣膜進行被覆,而 背面板。另一方面,於玻璃基板上設置偏光板,形成 矩陣(black matrix)以及彩色遽光片(color filt 的圖案,然後依序形成透明導電電路層、層間絕緣膜 製造上面板。繼而,介隔間隔物(spacer )使該背面 上面板相對向,並於兩板間封入液晶,藉此製造T F T 晶顯示裝置。上述層間絕緣膜一般係藉由以下方法形 塗佈感光性樹脂組成物,進行曝光及顯影而形成圖案 後使該圖案熱硬化。 對於用以形成上述層間絕緣膜之感光性樹脂組成 要求其絕緣性較高。 [專利文獻1 ]日本專利特開平8 - 2 6 2 7 0 9號公報 物。 固體 配線 以來 1〜 以如 明導 製造 黑色 e r ) ,而 板與 型液 成: , 缺 物, 200923584 [專利文獻2 ]日本專利特開2 0 0 0 - 1 6 2 7 6 9號公報 [專利文獻3 ]日本專利特開2 Ο Ο 3 - 3 3 0 1 8 0號公報 [專利文獻4 ]日本專利特開2 Ο Ο 6 - 2 5 9 Ο 8 3號公報 【發明内容】 [發明所欲解決之問題] 然而,關於專利文獻1〜4中所記載之感光性樹脂組成 物,例如當隨著積層數的增加而減小層間絕緣膜的厚度 時,難以維持足夠高的絕緣性,因此需要有絕緣性更高之 層間絕緣膜用感光性樹脂組成物。 本發明係鑒於上述課題而研發成者,其目的在於提供 一種具有更高絕緣性之層間絕緣膜用感光性樹脂組成物。 [解決問題之技術手段] 本發明者們發現,藉由於層間絕緣膜用感光性樹脂組 成物的鹼溶性樹脂成分中使用具有特定結構單元之共聚 物,可使絕緣性提高,而最終完成本發明。 本發明提供一種層間絕緣膜用感光性樹脂組成物,其 含有驗溶性樹脂成分(A )及感光劑(Β );上述驗溶性成分 (A)含有共聚物(A1),該共聚物(A1)含有含酸性基之 結構單元(a 1 )、含交聯性基之結構單元(a 2 )、以及含烷 氧基矽烷基之結構單元(a3)。 [功效] 根據本發明,可提供一種具有更高絕緣性之層間絕緣 膜用感光性樹脂組成物。 6 200923584 【實施方式】 本發明之層間絕緣膜用感光性樹脂組成物(以下 稱為「感光性樹脂組成物」),含有驗溶性樹脂成分(A 下,亦稱為(A )成分)及感光劑(B )(以下,亦稱為 成分)。 [驗溶性樹脂成分(A )] 本發明中之(A)成分含有共聚物(A1),該共聚物| 含有含酸性基之結構單元(a 1 )、含交聯性基之結構 (a2)、以及含烷氧基矽烷基之結構單元(a3)。再者 以下之記述中,分別將含酸性基之結構單元(a 1 )、含 性基之結構單元(a 2 )、以及含烷氧基矽烷基之結構 (a 3 )稱為結構單元(a 1 )、結構單元(a 2 )、以及結 元(a3 )。 本發明中之結構單元(al)含有可與鹼發生反應 即酸性基。作為此種酸性基之例,可舉出:酚性羥基 羧基(包含酸酐)。藉由含有此種含酸性基之結構單元 具有優異的顯影性。又,藉由將(A )成分中所含有的 性基之結構單元設為含驗性經基之結構單元,亦即, 僅含有含酚性羥基之結構單元作為含酸性基之結構單 除了改善顯影性以外亦可改善保存性(尤其是黏度隨 推移的變化)。含酚性羥基之結構單元中,較佳為以下 式(a -1 )所表示之含盼性經基之結構單元。藉由含有 含盼性經基之結構單元1可提高保存性,從而使得於 ,亦 )(以 (B) ;A1 ) 單元 ,於 交聯 〇0 — 早兀 構單 之基 以及 ,而 含酸 藉由 元, 時間 述通 此種 室溫 7 200923584 無法保存而必須進行冷凍保存的先前之層間絕緣膜用組成 物可於室溫保存。具體而言,於2 3 °C保存1個月後黏度變 化率為± 1 %以下,顯示出優異的經時穩定性。[Technical Field] The present invention relates to a photosensitive resin composition for an interlayer insulating film. [Prior Art] Since the prior art, in electronic components such as liquid crystal display elements, integrated circuit elements, and image pickup elements An interlayer insulating film or the like provided in a layered shape for insulating between them is formed. This interlayer insulating film is always formed using a photosensitive resin composition (for example, refer to Patent Document 4). For example, a TFT (Thin Film Transistor) type liquid crystal display element is generally manufactured by the following steps. A polarizing plate is disposed on the glass substrate to form a dielectric layer and TF T , and then coated with an interlayer insulating film to form a back surface plate. On the other hand, a polarizing plate is disposed on the glass substrate to form a black matrix and a color filt pattern, and then a transparent conductive circuit layer and an interlayer insulating film are sequentially formed to manufacture the upper panel. Then, the spacer is separated. The spacer is opposed to the upper surface of the back surface, and a liquid crystal is sealed between the two sheets to fabricate a TFT crystal display device. The interlayer insulating film is generally formed by applying a photosensitive resin composition by the following method. The pattern is developed to form a pattern, and the pattern is thermally cured. The photosensitive resin composition for forming the interlayer insulating film is required to have a high insulating property. [Patent Document 1] Japanese Patent Laid-Open No. Hei 8 - 2 6 2 7 0 Since the solid wiring has been manufactured, the black er is manufactured by the illuminator, and the plate and the molding liquid are: , the missing material, 200923584 [Patent Document 2] Japanese Patent Laid-Open No. 2 0 0 0 - 1 6 2 7 6 9 [Patent Document 3] Japanese Patent Laid-Open No. Hei 2 - 3 3 0 1 8 0 [Patent Document 4] Japanese Patent Laid-Open No. Hei 2 - 2 5 9 Ο 8 3 [Invention] [Invention Wanted to solve However, in the photosensitive resin composition described in Patent Documents 1 to 4, for example, when the thickness of the interlayer insulating film is decreased as the number of layers increases, it is difficult to maintain a sufficiently high insulating property, and therefore it is necessary to have A photosensitive resin composition for an interlayer insulating film having higher insulating properties. The present invention has been developed in view of the above problems, and an object of the invention is to provide a photosensitive resin composition for an interlayer insulating film having higher insulating properties. [Means for Solving the Problem] The present inventors have found that the use of a copolymer having a specific structural unit in an alkali-soluble resin component of a photosensitive resin composition for an interlayer insulating film can improve insulation and finally complete the present invention. . The present invention provides a photosensitive resin composition for an interlayer insulating film comprising a testable resin component (A) and a sensitizer (Β); and the above-mentioned test component (A) contains a copolymer (A1), the copolymer (A1) The structural unit (a1) containing an acidic group, the structural unit (a2) containing a crosslinkable group, and the structural unit (a3) containing an alkoxyalkyl group. [Effect] According to the present invention, a photosensitive resin composition for an interlayer insulating film having higher insulating properties can be provided. [Embodiment] The photosensitive resin composition for interlayer insulating film of the present invention (hereinafter referred to as "photosensitive resin composition") contains a solvent-soluble resin component (also referred to as component (A), and is photosensitive). Agent (B) (hereinafter also referred to as ingredient). [Soliding Resin Component (A)] The component (A) in the present invention contains a copolymer (A1) containing a structural unit (a1) having an acidic group and a structure (a2) having a crosslinkable group. And a structural unit (a3) containing an alkoxyalkyl group. In the following description, the structural unit (a 1 ) containing an acidic group, the structural unit (a 2 ) containing a substituent group, and the structure (a 3 ) containing an alkoxyalkyl group are respectively referred to as a structural unit (a). 1), structural unit (a 2 ), and junction element (a3). The structural unit (al) in the present invention contains an acidic group which can react with a base. Examples of such an acidic group include a phenolic hydroxycarboxy group (including an acid anhydride). The structural unit containing such an acidic group has excellent developability. Further, the structural unit of the group contained in the component (A) is a structural unit having an intrinsic radical, that is, a structural unit containing only a phenolic hydroxyl group as an acid group-containing structural unit is improved. In addition to developability, the preservation property (especially the change in viscosity with change) can be improved. In the structural unit containing a phenolic hydroxyl group, a structural unit having a desired transradical represented by the following formula (a-1) is preferred. By retaining the structural unit 1 containing the desired transradical group, the preservative property can be improved, so that (i) the (B); A1 unit is crosslinked, and the acid is contained. The composition of the previous interlayer insulating film which can not be stored and which must be cryopreserved can be stored at room temperature by means of the element and the time. Specifically, the viscosity change rate was ±1% or less after storage for one month at 23 ° C, and showed excellent stability with time.

(a-1) [上述通式中,1?°表示氫原子或者曱基,R1表示單鍵或 者碳數1〜5之伸烧基,R2表示碳數1〜5之烧基,a表示1 〜5之整數’ b表示0〜4之整數,a+b為5以下。再者, 1/ 當存在2個R2時,該等R2可彼此不同亦可相同] 於上述通式(a-Ι)中,R°較佳為曱基。R1表示單鍵或 者碳數 1〜5之直鏈狀或支鏈狀之伸烷基。具體而言可舉 出:亞甲基、伸乙基、伸丙基、異伸丙基、正伸丁基、異 伸丁基、第三伸丁基、伸戊基、異伸戊基、新伸戊基等。 其中,較佳為單鍵、亞曱基、伸乙基。特別是當R1為單鍵 時,可提高鹼溶性,進而可提高製成層間絕緣膜時之耐熱 性,因而較佳。 8 200923584 a表示1〜5之整數,就容易製造之因素考量,a較佳 為1。苯環中之羥基,以與R1鍵結之碳原子作為基準(1 位)時,較佳為鍵結於4位。 R2為碳數1〜5之直鏈或支鏈狀之烷基。具體而言可舉 出:曱基、乙基、丙基、異丙基、正丁基、異丁基、第三 丁基、戊基、異戊基、新戊基等。其中就容易製造之因素 考量,較佳為曱基或者乙基。 作為以上述通式(a-Ι)所表示之結構單元,具體而言 可舉出:以下述結構式(a-1-1)或者(a-1-2)所表示者。 特佳為以結構式(a - 1 - 1 )所表示之結構單元。 [化2](a-1) [In the above formula, 1?° represents a hydrogen atom or a fluorenyl group, R1 represents a single bond or a carbon number of 1 to 5, and R2 represents a carbon number of 1 to 5, and a represents 1 An integer of ~5 'b denotes an integer of 0 to 4, and a+b is 5 or less. Further, 1/ when two R2 are present, the R2 may be different from each other or the same.] In the above formula (a-Ι), R is preferably a fluorenyl group. R1 represents a single bond or a linear or branched alkyl group having 1 to 5 carbon atoms. Specific examples thereof include methylene, ethyl, propyl, isopropyl, n-butyl, isobutyl, butyl, pentyl, isoamyl, and new Amyl and so on. Among them, a single bond, an anthracene group, and an extended ethyl group are preferred. In particular, when R1 is a single bond, alkali solubility can be improved, and heat resistance at the time of forming an interlayer insulating film can be improved, which is preferable. 8 200923584 a represents an integer of 1 to 5, which is considered to be easy to manufacture, and a is preferably 1. The hydroxyl group in the benzene ring is preferably bonded to the 4-position when the carbon atom bonded to R1 is used as a reference (1 position). R2 is a linear or branched alkyl group having 1 to 5 carbon atoms. Specific examples thereof include an anthracenyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group, an isopentyl group, a neopentyl group and the like. Among them, factors which are easy to manufacture are preferably sulfhydryl or ethyl. Specific examples of the structural unit represented by the above formula (a-Ι) include those represented by the following structural formula (a-1-1) or (a-1-2). Particularly preferred is a structural unit represented by the structural formula (a - 1 - 1 ). [Chemical 2]

(a-1-1) (a-1-2) 以該通式(a-1)所表示之結構單元,可藉由使以下述 通式(a-Ι) ’所表示之聚合性單體與其他聚合性單體發生 共聚合而導入共聚物(A1)中。 [化3 ] 9 200923584 R°(a-1-1) (a-1-2) The structural unit represented by the general formula (a-1) can be represented by a polymerizable monomer represented by the following general formula (a-Ι) Copolymerization with another polymerizable monomer is carried out into the copolymer (A1). [化3] 9 200923584 R°

II

H2C=CH 人 o / R1 /0\ (R2) b (〇H)aH2C=CH person o / R1 /0\ (R2) b (〇H)a

(a-ΐΓ [上述通式中,R°、R1、R2、a、b與上述相同] 本發明中之結構單元(a2)含有藉由聚合而交聯之基 即交聯性基。藉由具有此種交聯性基,可在圖案形成後使 膜硬化,從而可提高耐熱性以及耐溶劑性。此種交聯性基 較佳為藉由加熱而交聯者,例如可舉出:具有環氧基之有 機基、具有氧雜環丁基(oxetanyl group)之有機基。其 中,就共聚物之製造容易性而言,較佳為具有環氧基之有 機基。在具有此種交聯性基之結構單元(a2 )中,作為具 有含有環氧基之有機基者,例如可以是藉由使以下的聚合 性單體共聚合所衍生:丙烯酸縮水甘油酯、甲基丙烯酸縮 水甘油醋、丙稀酸冷-甲基縮水甘油醋、曱基丙稀酸/3 -曱 基縮水甘油醋、α -乙基丙烯酸縮水甘油S旨、α -正丙基丙 烯酸縮水甘油醋、α -正丁基丙稀酸縮水甘油S旨、丙烯酸 3,4 -環氧丁酯、曱基丙烯酸 3,4 -環氧丁酯、丙烯酸6,7-環氧庚酯、曱基丙烯酸6, 7 -環氧庚酯、α -乙基丙烯酸6,7- 10 200923584 環氧庚酯、鄰乙烯基苄基縮水甘油醚、間乙烯基苄基縮水 甘油醚、對乙烯基苄基縮水甘油醚、曱基丙烯酸(3, 4 -環氧 環己基)甲酯等。該等結構單元(a 2 )可單獨使用或者組合 使用。其中,特佳為由丙稀酸縮水甘油醋或者曱基丙稀酸 縮水甘油酯所衍生之結構單元,此種結構單元係以下述通 式(a-2 )來表示。 [化4(a-ΐΓ [In the above formula, R°, R1, R2, a, b are the same as described above] The structural unit (a2) in the present invention contains a crosslinkable group which is a group which is crosslinked by polymerization. By having such a crosslinkable group, the film can be cured after the pattern formation, and heat resistance and solvent resistance can be improved. Such a crosslinkable group is preferably a crosslinker by heating, and for example, An organic group having an epoxy group and an organic group having an oxetanyl group. Among them, in view of ease of production of the copolymer, an organic group having an epoxy group is preferred. In the structural unit (a2), the organic group having an epoxy group may be derived, for example, by copolymerizing the following polymerizable monomers: glycidyl acrylate, glycidyl methacrylate, Acrylic acid cold - methyl glycidol vinegar, mercapto acrylic acid / 3 - decyl glycidol vinegar, α - methacrylic acid glycidyl S, α - n-propyl methacrylate glycerol, α - n-butyl Glycidyl acrylate, 3,4-butylene acrylate, 3,4-ring of methacrylic acid Butyl ester, 6,7-epoxyheptyl acrylate, 6,7-epoxyheptyl methacrylate, α-ethyl acrylate 6,7-10 200923584 epoxyheptyl ester, o-vinylbenzyl glycidyl ether, M-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, (3,4-epoxycyclohexyl)methyl methacrylate, etc. These structural units (a 2 ) may be used singly or in combination. Among them, a structural unit derived from glycidol acrylate or glycidyl thioglycolate is particularly preferred, and such a structural unit is represented by the following formula (a-2).

(a-2) [上述通式中,R3表示氫原子或者甲基] 以該通式(a - 2 )所表示之結構單元,就製造容易性、 成本上的優勢、以及提高所獲得之層間絕緣膜的耐溶劑性 之因素考量,可較佳地使用。 本發明中之結構單元(a3)含有烷氧基矽烷基。藉由 含有烷氧基矽烷基,可提高所得層間絕緣膜之絕緣性。其 中,較佳為以下述通式(a - 3 )所表示之結構單元。 [化5 ] 200923584 R4(a-2) [In the above formula, R3 represents a hydrogen atom or a methyl group] The structural unit represented by the above formula (a-2) is easy to manufacture, cost-effective, and improved in the obtained interlayer The solvent resistance of the insulating film can be preferably used. The structural unit (a3) in the present invention contains an alkoxyalkyl group. By containing an alkoxyalkylene group, the insulating property of the resulting interlayer insulating film can be improved. Among them, a structural unit represented by the following formula (a - 3 ) is preferred. [化5] 200923584 R4

(a-3) [上述通式中,R4表示氫原子或者曱基,R5表示碳數1 〜5之伸烷基,R6、R7以及R8可彼此不同亦可相同,表示 碳數1〜5之烷氧基或者烷基,R6、R7以及R8中之至少1 個為烷氧基] 於上述通式(a-3 )中,R5、R6、R7以及R8可為直鏈亦 可為支鏈。具有支鏈之伸烷基,例如可舉出:正、第二或 第三丁基亞甲基、1-曱基-2-乙基伸乙基、1-乙基-2-曱基 伸乙基、1-曱基-2, 2-二甲基伸乙基、1,卜二曱基-2-曱基 伸乙基、1,卜二甲基伸丙基、1,2-二甲基伸丙基、1,3-二 甲基伸丙基、甲基伸丁基。具有支鏈之烷基,例如可舉出: 卜或2 -甲基乙基,1-、2-或3 -曱基丙基,1,卜二曱基丙基, 1,2-二甲基丙基,1-、2-、3 -或4 -甲基丁基。具有支鏈之 烧氧基,例如可舉出:1-或 2 -甲基乙氧基,1-、2 -或 3-曱基丙氧基,1,1_二曱基丙氧基,1,2-二曱基丙氧基,1,3-二曱基丙氧基,1-、2-、3-或4 -曱基丁氧基。藉由使R6、 R7以及R8中的至少1個為烷氧基,可提高所得層間絕緣膜 之絕緣性,但藉由將該等基中的2個設為烷氧基可進一步 提高絕緣性,因而較佳,進而最佳為將3個基全部設為烷 12 200923584 氧基。 又,上述共聚物(A1)亦可含有除結構單元(al)、(a2) 以及(a3 )以外之結構單元(a4 )。作為該結構單元(a4 ), 可舉出:由丙烯酸酯類、甲基丙烯酸酯類、丙烯醯胺類、 曱基丙烯醯胺類、馬來醯亞胺類、烯丙基化合物、乙烯基 醚類、乙烯酯類以及苯乙烯類等所衍生之結構單元。(a-3) [In the above formula, R4 represents a hydrogen atom or a fluorenyl group, R5 represents an alkylene group having a carbon number of 1 to 5, and R6, R7 and R8 may be different from each other or the same, and represent a carbon number of 1 to 5; An alkoxy group or an alkyl group, at least one of R6, R7 and R8 is an alkoxy group] In the above formula (a-3), R5, R6, R7 and R8 may be a straight chain or a branched chain. The alkyl group having a branched chain may, for example, be a normal, a second or a third butylmethylene group, a 1-mercapto-2-ethylexylethyl group, a 1-ethyl-2-indenyl group-extended group, 1-mercapto-2,2-dimethylexylethyl, 1,didecyl-2-indenylethyl, 1,dimethylpropyl, 1,2-dimethylpropane , 1,3-dimethylmethyl propyl, methyl butyl. The alkyl group having a branched chain may, for example, be: or 2-methylethyl, 1-, 2- or 3-mercaptopropyl, 1, bis-dipropylpropyl, 1,2-dimethyl Propyl, 1-, 2-, 3- or 4-methylbutyl. The alkoxy group having a branched chain may, for example, be 1- or 2-methylethoxy, 1-, 2- or 3-mercaptopropoxy, 1,1-didecylpropoxy, 1 , 2-dimercaptopropoxy, 1,3-dimercaptopropoxy, 1-, 2-, 3- or 4-mercaptobutoxy. When at least one of R6, R7 and R8 is an alkoxy group, the insulating property of the obtained interlayer insulating film can be improved, but the insulating property can be further improved by using two of the groups as alkoxy groups. Therefore, it is preferred to further preferably use all of the three groups as the alkane 12 200923584 oxy group. Further, the copolymer (A1) may contain a structural unit (a4) other than the structural units (al), (a2) and (a3). Examples of the structural unit (a4) include acrylates, methacrylates, acrylamides, mercapto acrylamides, maleimides, allyl compounds, and vinyl ethers. Structural units derived from the class, vinyl esters, and styrenes.

作為丙烯酸酯類,具體而言可舉出:丙烯酸曱酯、丙 烯酸乙酯、丙烯酸丙酯、丙烯酸異丙酯、丙烯酸丁酯、丙 烯酸戊酯、丙烯酸乙基己酯、丙烯酸辛基、丙烯酸第三辛 酯等直鏈或支鏈丙烯酸烷基酯;丙烯酸環己酯、丙烯酸雙 環戊酯、丙烯酸2 -曱基環己酯、丙烯酸雙環戊酯、丙烯酸 雙環戊氧基乙酉旨(dicyclopentanyloxy ethyl acrylate)、 丙稀酸異冰片酉旨(isobornyl acrylate)、丙稀酸[4-(經基 曱基)環己基]曱酯等脂環式丙烯酸烷基酯;丙烯酸氯乙 酯、丙烯酸2, 2 -二甲基羥基丙酯、丙烯酸2 -羥基乙酯、丙 烯酸5 -羥基戊酯、三羥甲基丙烷單丙烯酸酯、季戊四醇單 丙烯酸酯、丙烯酸苄酯、丙烯酸曱氧基苄酯、丙烯酸糠酯 (furfuryl acrylate ) 丙 烯酸四 氫糠酯 (tetrahydrofurfuryl acrylate)、丙稀酸芳酯(例如丙 稀酸苯ϊ旨)等。 作為甲基丙烯酸酯類,具體而言可舉出:甲基丙烯酸 曱酯、曱基丙烯酸乙酯、曱基丙烯酸丙酯、曱基丙烯酸異 丙酯、甲基丙烯酸正丁酯、曱基丙烯酸第二丁酯、甲基丙 烯酸第三丁酯、甲基丙烯酸戊酯、曱基丙烯酸己酯、曱基 13 200923584Specific examples of the acrylates include decyl acrylate, ethyl acrylate, propyl acrylate, isopropyl acrylate, butyl acrylate, amyl acrylate, ethyl hexyl acrylate, octyl acrylate, and acrylic acid. a linear or branched alkyl acrylate such as octyl ester; cyclohexyl acrylate, dicyclopentanyl acrylate, 2-nonylcyclohexyl acrylate, dicyclopentanyl acrylate, dicyclopentanyloxy ethyl acrylate, Alicyclic acrylate, alicyclic acrylate, etc.; alicyclic acrylate, etc.; chloroethyl acrylate, 2,2-dimethacrylate Hydroxypropyl propyl ester, 2-hydroxyethyl acrylate, 5-hydroxypentyl acrylate, trimethylolpropane monoacrylate, pentaerythritol monoacrylate, benzyl acrylate, decyl benzyl acrylate, furfuryl acrylate ) tetrahydrofurfuryl acrylate, aryl acrylate (for example, benzoic acid benzoate). Specific examples of the methacrylates include decyl methacrylate, ethyl methacrylate, propyl methacrylate, isopropyl methacrylate, n-butyl methacrylate, and methacrylic acid. Dibutyl ester, butyl methacrylate, amyl methacrylate, hexyl methacrylate, decyl 13 200923584

丙烯酸辛酯等直鏈或支鏈曱基丙烯酸烷基酯;曱基丙烯酸 環己酯、曱基丙稀酸雙環戊酯 (dicyclopentanyl methacrylate)、甲基丙豨酸2-曱基環己酷、甲基丙稀酸 雙環戊氧基乙酯、曱基丙烯酸異冰片酯 (isobornyl acrylate)、曱基丙煉酸[4-(經基曱基)環己基]甲醋等曱基 丙烯酸脂環式烷基酯;甲基丙烯酸苄酯、曱基丙烯酸氯苄 酯、甲基丙烯酸2 -羥基乙酯、曱基丙烯酸4 -羥基丁酯、曱 基丙烯酸5 -羥基戊酯、曱基丙烯酸2, 2 -二曱基-3-羥基丙 酯、三羥曱基丙烷單曱基丙烯酸、季戊四醇單甲基丙烯酸 酯、甲基丙烯酸糠酯、曱基丙烯酸四氫糠酯、曱基丙烯酸 芳酯(例如曱基丙烯酸苯酯、曱基丙烯酸曱苯酯(c r e s y 1 methacrylate )、 曱基丙稀酸萘基酯 (naphthyl methacrylate)等)等。 作為丙烯醯胺類,具體而言可舉出:丙烯醯胺、N -烷 基丙烯醯胺(烷基之碳數較佳為 1〜10,例如可舉出:甲 基、乙基、丙基、丁基、第三丁基、庚基、辛基、環己基、 羥基乙基、苄基等)、N-芳基丙烯醯胺(作為芳基,例如可 舉出:苯基、甲苯基、硝基苯基、萘基、羥基苯基等)、N,N-二烷基丙烯醯胺(烷基之碳數較佳為1〜10)、Ν,Ν-芳基丙 烯醯胺(作為芳基,例如可舉出苯基)、Ν -曱基-Ν-苯基丙 烯醯胺、Ν -羥基乙基-Ν-曱基丙烯醯胺、Ν-2 -乙醯胺乙基- Ν-乙酸基丙烯醯胺。 作為曱基丙烯醯胺類,具體而言可舉出:曱基丙烯醯 胺、Ν -烷基曱基丙烯醯胺(作為烷基,較佳為碳數為 1〜 14 200923584 10者,例如可舉出:曱基、乙基、第三丁基、乙基己基、 羥基乙基、環己基等)、N -芳基甲基丙烯醯胺(作為芳基, 可舉出苯基等)、N,N -二烷基曱基丙烯醯胺(作為烷基,可 舉出:乙基、丙基、丁基等)、N,N -二芳基甲基丙烯醯胺(作 為芳基,可舉出苯基等)、N -羥基乙基-N-曱基曱基丙烯醯 胺、N -甲基-N-苯基甲基丙烯醯胺、N -乙基-N-苯基曱基丙 烯醯胺。 作為馬來醯亞胺(maleimide)類,具體而言可舉出: 環己基馬來醯亞胺等。 作為烯丙基化合物,具體而言可舉出:烯丙酯類(例 如乙酸稀丙S旨、己酸烯丙醋、辛酸稀丙醋、月桂酸烯丙S旨、 棕櫚酸烯丙酯、硬脂酸烯丙酯、苯甲酸烯丙酯、乙醯乙酸 烯丙酯、乳酸烯丙酯等)、烯丙氧基乙醇等。 作為乙烯基醚類,具體而言可舉出:烷基乙烯基醚(例 如:己基乙烯基醚、辛基乙烯基醚、癸基乙烯基醚、乙基 己基乙烯基醚、曱氧基乙基乙烯基醚、乙氧基乙基乙烯基 醚、氣乙基乙烯基醚、1-曱基-2, 2-二甲基丙基乙烯基醚、 2 -乙基丁基乙烯基醚、羥基乙基乙烯基醚、二乙二醇乙烯 基醚、二曱胺基乙基乙烯基醚、二己胺基乙基乙烯基醚、 丁胺基乙基乙烯基醚、苄基乙烯基醚、四氫糠基乙烯基醚 等)、乙烯基芳基醚(例如乙烯基苯基醚、乙烯基曱苯基醚、 乙烯基氯苯基醚、乙烯基-2,4-二氯苯基醚、乙烯基萘基 醚、乙烯基蒽基醚等)。 作為乙烯酯類,具體而言可舉出:丁酸乙烯酯、異丁 15 200923584 酸乙烯酯、三甲基乙酸乙烯酯、二乙基乙酸乙烯酯、戊 乙烯酯(vinyl valerate)、已酸乙稀酯、氯乙酸乙稀酯 二氯乙酸乙烯酯、甲氧基乙酸乙烯酯、丁氧基乙酸乙烯I丨 苯基乙酸乙烯酯、乙醯乙酸乙烯酯、乳酸乙烯酯、/3 -苯 丁酸乙烯酯、苯曱酸乙烯酯、水楊酸乙烯酯、氯苯曱酸 烯酯、四氣苯曱酸乙烯酯、萘甲酸乙烯酯。 作為苯乙烯類,具體而言可舉出:苯乙烯、烷基苯 烯(例如:甲基苯乙烯、二甲基苯乙烯、三曱基苯乙烯 乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙賴 己基苯乙烯、環己基苯乙烯、癸基苯乙烯、苄基苯乙烯 氣甲基苯乙烯、三氟曱基苯乙烯、乙氧基曱基苯乙烯、 醯氧基甲基苯乙烯等)、烷氧基苯乙烯(例如:甲氧基苯 烯、4 -甲氧基-3-曱基苯乙烯、二曱氧基苯乙烯等)、鹵 苯乙烯(例如:氣苯乙烯、二氯苯乙烯、三氯苯乙烯、 氣笨乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯 稀、氣苯乙稀、三氣苯乙稀、2_漠_4 -三氣曱基苯乙稀、 氟_3 -三氟甲基苯乙稀等)。 作為該等結構單元(a4 ),特佳為由具有脂環式基之 體(尤其是丙烯酸脂環式烷基酯或者甲基丙烯酸脂環式 基酯)所衍生者。如此般,藉由將具有脂環式之基導入 聚物中,可進一步降低層間絕緣膜之介電常數。又,馬 醯亞胺類亦可改善形狀維持性,因而較佳。 上述共聚物(A1 )中之結構單元(a 1 )之比率,較 為20莫耳%〜70莫耳%,更佳為20莫耳%〜60莫耳%。藉 酸 、 、 基 乙 乙 乙 乙 化 四 乙 4- 單 烧 共 來 佳 由 16 200923584 使結構單元(a 1 )之比率為上述範圍内,可 脂組成物充分的驗溶性。藉此,可使所形成 角為45度以上90度以下,從而可形成具有 比度之圖案。 上述共聚物(A 1 )中之結構單元(a 2 ) 為2 0莫耳%〜7 0莫耳%。藉由使結構單元( 上述範圍内,可賦予感光性樹脂組成物充分 可獲得作為層間絕緣膜之耐化學性。 又,上述共聚物(A1)中之結構單元( 較佳為1莫耳%〜4 0莫耳%。藉由使結構單元 為上述範圍内,可降低感光性樹脂組成物之 提高作為層間絕緣膜之絕緣性。 進而,上述共聚物(A1)中之結構單元( 較佳為0莫耳%〜4 0莫耳%,更佳為0莫耳% -而較佳為0莫耳%~10莫耳%。 上述共聚物(A1)之重量平均分子量( 層析法(GPC )之經苯乙烯換算之測定值),. 5 0 0 0 0,更佳為5 0 0 0〜3 0 0 0 0。藉由使分子量 可容易地形成為膜狀。又,藉由使分子量為 可獲得適度的鹼溶性。 上述共聚物(A1)可藉由公知之自由基 即,可藉由以下方法來製造:將衍生上述結 (a2 )、( a3 )以及(a4 )之聚合性單體以及 聚合起始劑溶解於聚合溶劑中後,進行加熱 賦予感光性樹 之圖案之側壁 高於先前的對 之比率,較佳 a 2 )之比率為 的熱硬化性, a 3 )之比率, (a 3 )之比率 介電常數,可 :a 4 )之比率, ^ 3 0莫耳%,進 Mw :凝膠滲透 較佳為2 0 0 0〜 為2 0 0 0以上, 5 0 0 0 0以下, 聚合來製造。 構單元(al )、 公知之自由基 攪拌,。 17 200923584 進而,驗溶性樹脂成分(A ),除上述共聚物(A 1 )以 外,亦可含有其他聚合物(A2)。作為該聚合物(A2),可 舉出:由結構單元(a4 )所構成之聚合物或者共聚物、結 構單元(al)與結構單元(a4)之共聚物、結構單元(a2) 與結構單元(a4 )之共聚物等。該聚合物(A2 )既可為1 種,亦可組合2種以上。 該聚合物(A2)相對於上述共聚物(A1) 100質量份, 較佳為0〜50質量份,更佳為0〜30質量份。 該聚合物(A2)之重量平均分子量(Mw:凝膠滲透層 析法(GPC )之經苯乙烯換算之測定值)較佳為 2 0 0 0〜 5 0 0 0 0,更佳為 5 0 0 0 〜3 0 0 0 0。 [感光劑(B)] 作為感光劑(B ),若為可用作感光成分之化合物則無 特別限定,但較佳為含重氮酿(quinonediazide)基之化 合物。 作為含重氮醌基之化合物,具體而言可舉出:含酚性 經基之化合物與重氮萘醌續酸(naphthoquinone diazide s u 1 f ο n i c a c i d )化合物的完全酯化物或部分酯化物。 作為上述含酚性羥基之化合物,具體而言可舉出: 2,3,4 -三羥基二苯甲酮、2, 3,4, 4’-四羥基二苯曱酮等多羥 基二苯甲酮類; 三(4-羥基苯基)甲烷、雙(4-羥基-3-甲基苯基)-2-羥 基苯基甲烷、雙(4 -羥基- 2,3,5_三甲基苯基)-2 -羥基苯基 18 200923584 甲烷、雙(4 -羥基-3, 5 -二曱基苯基)-4 -羥基苯基曱烷、雙 (4-羥基-3, 5-二曱基苯基)-3-羥基苯基甲烷、雙(4-羥基 -3, 5-二曱基苯基)-2-羥基苯基甲烷、雙(4-羥基-2, 5-二甲 基苯基)-4 -羥基苯基甲烷、雙(4 -羥基-2, 5 -二曱基苯 基)-3-羥基苯基曱烷、雙(4-羥基-2, 5-二甲基苯基)-2-羥 基苯基甲烧、雙(4 -經基-3,5 -二甲基苯基)-3,4 -二經基苯 基曱烷、雙(4-羥基-2, 5-二曱基苯基)-3,4-二羥基苯基曱 烷、雙(4-羥基-2, 5-二甲基苯基)-2, 4-二羥基苯基甲烷、 雙(4-羥基苯基)-3 -甲氧基-4-羥基苯基曱烷、雙(5 -環己基 -4-羥基-2-曱基苯基)-4-羥基苯基曱烷、雙(5-環己基- 4-羥基-2-曱基苯基)-3 -羥基苯基甲烷、雙(5 -環己基-4-羥基 -2 -曱基苯基)-2-羥基苯基曱烷、雙(5-環己基-4-羥基- 2-甲基苯基)-3,4 -二經基苯基f院等三苯齡·( trisphenol) 型化合物; 2,4 -雙(3, 5-二甲基-4-羥基节基)-5-羥基苯酚、2,6-雙(2, 5-二甲基-4-羥基苄基)-4 -甲基苯酚等線型3核體苯 紛化合物; 1,1-雙[3-(2 -羥基-5-曱基苄基)-4 -羥基-5-環己基苯 基]異丙烷、雙[2,5-二曱基- 3-(4-羥基-5-曱基苄基)-4-羥基苯基]曱烷、雙[2,5-二曱基- 3-(4-羥基苄基)-4-羥基 苯基]曱烷、雙[3-(3,5 -二甲基-4-羥基苄基)-4-羥基- 5-曱基苯基]甲烷、雙[3-(3,5 -二甲基-4-羥基苄基)-4 -羥基 -5 -乙基苯基]甲烧、雙[3-(3,5 -二乙基-經基节基)-4-羥基-5-甲基苯基]曱烷、雙[3-(3,5-二乙基-4-羥基苄 19 200923584 基)-4 -經基_5 -乙基苯基]曱烧、雙[2 -經基-3-(3,5 -二甲基 -4-羥基苄基)-5 -甲基苯基]甲烷、雙[2-羥基- 3-(2-羥基 -5 -曱基苄基)-5 -曱基苯基]曱烷、雙[4 -羥基- 3- (2 -羥基 -5 -甲基苄基)-5 -曱基苯基]曱烷、雙[2, 5-二甲基- 3-(2-羥基-5-曱基苄基)- 4 -羥基苯基]曱烷等線型4核體苯酚化 合物; 2,4-雙[2-羥基- 3-(4-羥基苄基)-5 -甲基苄基]-6-環 己基苯酚、2, 4-雙[4-羥基-3-(4-羥基f基)-5 -曱基苄 基]-6 -環己基苯酚、2,6 -雙[2, 5 -二曱基- 3- (2 -羥基- 5-曱基苄基)-4 -羥基苄基]-4 -甲基苯酚等之線型5核體苯酚 化合物等線型多酚化合物; 雙(2,3,4-三羥基苯基)曱烷、雙(2, 4-二羥基苯基)曱 院、2, 3,4-三經基苯基_4’_經基苯基曱院、2-(2,3, 4-三經 基苯基)-2-(2’,3’,4’-三羥基苯基)丙烷、2-(2,4-二羥基 苯基)-2-(2’,4’ -二羥基苯基)丙烷、2-(4-羥基苯 基)-2-(4’ -經基苯基)丙烧、2-(3-敗-4-經基苯基)-2-(3’ -氣_4’_經基苯基)丙烧、2-(2,4 -二經基苯基)-2-(4’-經基 苯基)丙烧、2-(2,3,4~三經基苯基)-2-(4’-經基苯基)丙 烧、2-(2,3, 4-三經基笨基)-2-(4’ -經基_3’,5’-二甲基苯 基)丙烷等雙酚型化合物; 卜[1-(4-羥基苯基)異丙基]-4-[l,l-雙(4-羥基苯基) 乙基]苯、1-[1-(3 -曱基經基苯基)異丙基]-4-[l,l -雙 (3-甲基-4-羥基苯基)乙基]苯、等多核分枝型化合物; 1,1 -雙(4 -羥基苯基)環己烷等縮合型苯酚化合物等。 20 200923584 該等可單獨使用或者將2種以上組合使用。 又,作為上述重氮萘醌磺酸化合物,可舉出:萘醌-1, 2 -重氮基-5 -磺酸或者萘醌-1,2 -重氮基-4 -磺酸等。 又,其他含重氮醌基之化合物,例如可舉出:鄰重氮 苯 S昆(ortho-benzoquinone diazide )、鄰重氮萘酿 (ortho-naphthoquinone diazide )、 鄰重氮 葱酉昆 (ortho-anthraquinone diazide)或者鄰重氮萘醌石黃酸酉旨 類等該等之核取代衍生物。Linear or branched alkyl methacrylate such as octyl acrylate; cyclohexyl methacrylate, dicyclopentanyl methacrylate, 2-methylcyclohexanyl methacrylate Acrylic alicyclic aryl acrylate, isobornyl acrylate, mercaptopropionic acid [4-(transyl)cyclohexyl] methyl acetate, etc. Ester; benzyl methacrylate, chlorobenzyl methacrylate, 2-hydroxyethyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, methacrylic acid 2, 2 - Mercapto-3-hydroxypropyl ester, trihydroxymercaptopropane monomethacrylic acid, pentaerythritol monomethacrylate, decyl methacrylate, tetrahydrofurfuryl methacrylate, aryl methacrylate (eg methacrylic acid) Phenyl ester, cresy 1 methacrylate, naphthyl methacrylate, and the like. Specific examples of the acrylamides include acrylamide and N-alkyl acrylamide (the number of carbon atoms of the alkyl group is preferably from 1 to 10, and examples thereof include a methyl group, an ethyl group, and a propyl group. , butyl, tert-butyl, heptyl, octyl, cyclohexyl, hydroxyethyl, benzyl, etc.), N-aryl acrylamide (for example, aryl, phenyl, tolyl, Nitrophenyl, naphthyl, hydroxyphenyl, etc.), N,N-dialkylpropenylamine (the carbon number of the alkyl group is preferably from 1 to 10), hydrazine, fluorene-aryl acrylamide (as aryl) Examples of the group include phenyl), fluorenyl-fluorenyl-fluorene-phenyl acrylamide, hydrazine-hydroxyethyl-fluorenyl decyl acrylamide, hydrazine-2-acetamidoethyl-hydrazine-acetic acid Acrylamide. Specific examples of the mercapto acrylamides include mercaptopropenylamine and fluorenyl-alkylmercaptopropenylamine (as the alkyl group, preferably having a carbon number of 1 to 14 200923584 10, for example, Examples thereof include a mercapto group, an ethyl group, a tributyl group, an ethylhexyl group, a hydroxyethyl group, a cyclohexyl group, etc., and an N-arylmethacrylamide (as an aryl group, a phenyl group, etc.), N , N-dialkylmercapto acrylamide (as an alkyl group, ethyl, propyl, butyl, etc.), N,N-diarylmethacrylamide (as an aryl group) Phenyl, etc.), N-hydroxyethyl-N-mercaptodecyl acrylamide, N-methyl-N-phenylmethacrylamide, N-ethyl-N-phenylmercaptopropene amine. Specific examples of the maleimide type include cyclohexylmaleimide and the like. Specific examples of the allyl compound include allyl esters (for example, acetic acid isopropyl acetate, hexanoic acid acrylic acid, octanoic acid propylene vinegar, lauric acid acrylic acid, allyl palmitate, and hard). Allyl fatty acid ester, allyl benzoate, allyl acetate, allyl lactate, etc.), allyloxyethanol, and the like. Specific examples of the vinyl ethers include alkyl vinyl ethers (for example, hexyl vinyl ether, octyl vinyl ether, mercapto vinyl ether, ethylhexyl vinyl ether, and decyloxyethyl). Vinyl ether, ethoxyethyl vinyl ether, gas ethyl vinyl ether, 1-mercapto-2,2-dimethylpropyl vinyl ether, 2-ethylbutyl vinyl ether, hydroxyethyl Vinyl ether, diethylene glycol vinyl ether, diamylaminoethyl vinyl ether, dihexylaminoethyl vinyl ether, butylaminoethyl vinyl ether, benzyl vinyl ether, tetrahydrogen Mercapto vinyl ether, etc., vinyl aryl ether (such as vinyl phenyl ether, vinyl phenyl phenyl ether, vinyl chlorophenyl ether, vinyl-2,4-dichlorophenyl ether, vinyl Naphthyl ether, vinyl decyl ether, etc.). Specific examples of the vinyl esters include vinyl butyrate and isobutyl 15 200923584 vinyl acetate, trimethyl vinyl acetate, diethyl vinyl acetate, vinyl valerate, and acid B. Dilute ester, vinyl chloroacetate, vinyl chloroacetate, methoxy vinyl acetate, butoxy vinyl acetate, ethylene sulfonate, vinyl acetate, vinyl lactate, -3-butyric acid Vinyl ester, vinyl benzoate, vinyl salicylate, chlorobenzoic acid ester, vinyl tetrabenzoate, vinyl naphthoate. Specific examples of the styrenes include styrene and alkyl benzene (for example, methyl styrene, dimethyl styrene, tridecyl styrene ethyl styrene, diethyl styrene, and isobutylene). Propyl styrene, butyl benzylidene styrene, cyclohexyl styrene, mercapto styrene, benzyl styrene gas methyl styrene, trifluorodecyl styrene, ethoxylated styrene, hydrazine Oxymethylstyrene, etc.), alkoxystyrene (for example: methoxyphenylene, 4-methoxy-3-mercaptostyrene, dimethoxy styrene, etc.), halostyrene (for example) : gas styrene, dichlorostyrene, trichlorostyrene, gas stupid ethylene, pentachlorostyrene, bromostyrene, dibromostyrene, iodobenzene, styrene, tris, styrene, 2_ Desert _4 - triseophenyl styrene, fluorine _3-trifluoromethyl styrene, etc.). As the structural unit (a4), it is particularly preferred to be derived from a body having an alicyclic group (especially an alicyclic alkyl acrylate or an alicyclic methacrylate). Thus, by introducing the alicyclic group into the polymer, the dielectric constant of the interlayer insulating film can be further reduced. Further, the quinone imines are also preferred because they also improve shape retention. The ratio of the structural unit (a 1 ) in the above copolymer (A1) is from 20 mol% to 70 mol%, more preferably from 20 mol% to 60 mol%. By acid, ethyl, ethyl, ethyl, ethyl, 4-, 4-, 4-,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Thereby, the formed angle can be made 45 degrees or more and 90 degrees or less, whereby a pattern having a ratio can be formed. The structural unit (a 2 ) in the above copolymer (A 1 ) is from 20 mol% to 70 mol%. By the structural unit (the chemical resistance of the interlayer insulating film can be sufficiently obtained by providing the photosensitive resin composition within the above range. Further, the structural unit in the copolymer (A1) (preferably 1 mol% 〜 When the structural unit is in the above range, the improvement of the photosensitive resin composition can be reduced as the insulating property of the interlayer insulating film. Further, the structural unit in the copolymer (A1) (preferably 0) Molar% to 40% by mole, more preferably 0% by mole - and preferably 0% by mole to 10% by mole. Weight average molecular weight of the above copolymer (A1) (by chromatography (GPC) The measured value in terms of styrene), .500 00, more preferably 50,000 to 30,000. By making the molecular weight easily formed into a film shape, further, by making the molecular weight available Moderate alkali solubility. The above copolymer (A1) can be produced by a known radical, that is, a polymerizable monomer which is derived from the above-mentioned knots (a2), (a3) and (a4) and polymerized by a known method. After the initiator is dissolved in the polymerization solvent, heating is applied to the side of the pattern of the photosensitive tree The wall is higher than the previous ratio, preferably the ratio of a 2 ) is the thermosetting property, the ratio of a 3 ), the ratio of the dielectric constant of (a 3 ), the ratio of a 4 ), ^ 3 0 Ear %, Mw: gel permeation is preferably 2 0 0 0~ 2 0 0 0 or more, 5 0 0 0 0 or less, and is produced by polymerization. The unit (al), known as free radicals, is stirred. Further, the test-soluble resin component (A) may contain other polymer (A2) in addition to the above copolymer (A1). The polymer (A2) may, for example, be a polymer or a copolymer composed of the structural unit (a4), a copolymer of the structural unit (al) and the structural unit (a4), a structural unit (a2) and a structural unit. Copolymer of (a4). The polymer (A2) may be used alone or in combination of two or more. The polymer (A2) is preferably 0 to 50 parts by mass, more preferably 0 to 30 parts by mass, per 100 parts by mass of the copolymer (A1). The weight average molecular weight of the polymer (A2) (Mw: styrene-converted value of gel permeation chromatography (GPC)) is preferably from 20,000 to 50,000, more preferably 5 0. 0 0 ~3 0 0 0 0. [Photosensitive agent (B)] The photosensitive agent (B) is not particularly limited as long as it is a compound which can be used as a photosensitive component, but is preferably a compound containing a quinonediazide group. Specific examples of the diazonium-containing compound include a fully esterified or partially esterified compound of a phenolic thiol-containing compound and a naphthoquinone diazide s u 1 f ο n i c a c i d compound. Specific examples of the phenolic hydroxyl group-containing compound include polyhydroxybenzophenone such as 2,3,4-trihydroxybenzophenone and 2,3,4,4'-tetrahydroxybenzophenone. Ketones; tris(4-hydroxyphenyl)methane, bis(4-hydroxy-3-methylphenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2,3,5-trimethylbenzene -2 -hydroxyphenyl 18 200923584 methane, bis(4-hydroxy-3,5-dimercaptophenyl)-4-hydroxyphenyldecane, bis(4-hydroxy-3, 5-didecyl) Phenyl)-3-hydroxyphenylmethane, bis(4-hydroxy-3, 5-dimercaptophenyl)-2-hydroxyphenylmethane, bis(4-hydroxy-2, 5-dimethylphenyl) -4 -hydroxyphenylmethane, bis(4-hydroxy-2,5-dimercaptophenyl)-3-hydroxyphenyldecane, bis(4-hydroxy-2, 5-dimethylphenyl) 2-hydroxyphenylmethane, bis(4-cyano-3,5-dimethylphenyl)-3,4-di-phenylphenylnonane, bis(4-hydroxy-2, 5-di Nonylphenyl)-3,4-dihydroxyphenylnonane, bis(4-hydroxy-2,5-dimethylphenyl)-2,4-dihydroxyphenylmethane, bis(4-hydroxybenzene -3 -methoxy-4-hydroxyphenyl decane, bis (5-ring 4-hydroxy-2-mercaptophenyl)-4-hydroxyphenyl decane, bis(5-cyclohexyl-4-hydroxy-2-mercaptophenyl)-3-hydroxyphenylmethane, bis ( 5-cyclohexyl-4-hydroxy-2-indenylphenyl)-2-hydroxyphenyldecane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3,4-di Triphenyl-type compound such as phenylphenyl f; 2,4-bis(3,5-dimethyl-4-hydroxyl)-5-hydroxyphenol, 2,6-bis (2, Linear 3-nuclear benzene compound such as 5-dimethyl-4-hydroxybenzyl)-4-methylphenol; 1,1-bis[3-(2-hydroxy-5-fluorenylbenzyl)-4 Hydroxy-5-cyclohexylphenyl]isopropane, bis[2,5-dimercapto-3-(4-hydroxy-5-fluorenylbenzyl)-4-hydroxyphenyl]decane, bis[2, 5-dimercapto-3-(4-hydroxybenzyl)-4-hydroxyphenyl]decane, bis[3-(3,5-dimethyl-4-hydroxybenzyl)-4-hydroxy-5 -nonylphenyl]methane, bis[3-(3,5-dimethyl-4-hydroxybenzyl)-4-hydroxy-5-ethylphenyl]methyst, bis[3-(3,5 -diethyl-pyridyl)-4-hydroxy-5-methylphenyl]decane, bis[3-(3,5-diethyl-4-hydroxybenzyl 19 200923584)-4 - Base _5-ethylphenyl] sputum, [2-Pentyl-3-(3,5-dimethyl-4-hydroxybenzyl)-5-methylphenyl]methane, bis[2-hydroxy-3-(2-hydroxy-5-fluorenyl) Benzyl)-5-nonylphenyl]decane, bis[4-hydroxy-3-(2-hydroxy-5-methylbenzyl)-5-nonylphenyl]decane, bis[2, 5 a linear 4-nuclear phenol compound such as dimethyl 3-(2-hydroxy-5-fluorenylbenzyl)-4-hydroxyphenyl]decane; 2,4-bis[2-hydroxy-3-(4) -hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, 2,4-bis[4-hydroxy-3-(4-hydroxyfyl)-5-mercaptobenzyl]-6 Linear 5-core of cyclohexylphenol, 2,6-bis[2,5-dimercapto-3-(2-hydroxy-5-fluorenylbenzyl)-4-hydroxybenzyl]-4-methylphenol Steroidal polyphenolic compound such as phenolic compound; bis(2,3,4-trihydroxyphenyl)decane, bis(2,4-dihydroxyphenyl) fluorene, 2,3,4-trisylphenyl _4'_Phenylphenyl brothel, 2-(2,3,4-trisylphenyl)-2-(2',3',4'-trihydroxyphenyl)propane, 2-(2 ,4-dihydroxyphenyl)-2-(2',4'-dihydroxyphenyl)propane, 2-(4-hydroxyphenyl)-2-(4'-p-phenyl)propane, 2 -(3-fail-4-phenylphenyl)-2-(3 - gas _4'_ mercaptophenyl) propane, 2-(2,4-di-phenyl)-2-(4'- mercaptophenyl)propane, 2-(2,3,4 ~Trisylphenyl)-2-(4'-pyridylphenyl)propane, 2-(2,3,4-trisylphenyl)-2-(4'-pyridyl_3', a bisphenol type compound such as 5'-dimethylphenyl)propane; [1-(4-hydroxyphenyl)isopropyl]-4-[l,l-bis(4-hydroxyphenyl)ethyl] Benzene, 1-[1-(3-mercaptophenyl)isopropyl]-4-[l,l-bis(3-methyl-4-hydroxyphenyl)ethyl]benzene, etc. a branched form compound; a condensed phenol compound such as 1,1-bis(4-hydroxyphenyl)cyclohexane. 20 200923584 These may be used alone or in combination of two or more. Further, examples of the diazonaphthoquinone sulfonic acid compound include naphthoquinone-1,2-diazo-5-sulfonic acid or naphthoquinone-1,2-diazo-4sulfonic acid. Further, other compounds containing a diazonium group include, for example, ortho-benzoquinone diazide, ortho-naphthoquinone diazide, ortho-nitrogen onion (ortho-ortho-). Anthraquinone diazide) or a similar nuclear substituted derivative such as the diazonaphthoquinone.

進而,亦可使用鄰重氮醌磺醯氯與具有羥基或胺基的 化合物(例如苯酚、對甲氧基苯酚、二曱基苯酚、對苯二 酚、雙酚 A、萘酚、鄰苯二酚、鄰苯三酚、鄰苯三酚單甲 醚、鄰苯三酚-1 , 3 -二曱醚、沒食子酸、殘留有一部分羥基 而進行酯化或醚化之沒食子酸、苯胺、對胺基二苯基胺等) 之反應生成物等。該等可單獨使用或者將2種以上組合使 用。 該等含重氮醌基之化合物,例如可藉由以下方法來製 造:於二氧陸圜(dioxane)等適當的溶劑中,於三乙醇胺、 碳酸驗、碳酸氫驗等驗的存在下,使三苯酌·型化合物與萘 醌-1,2 -重氮基-5-磺醯氯或萘醌-1,2 -重氮基-4-磺醯氯進 行縮合反應,而進行完全醋化或部分目旨化。 作為含重氮醌基之化合物,較佳為重氮萘醌磺酸酯化 物。 又,作為上述(B )成分,較佳為使用非二苯甲酮系之 含重氮趣基之化合物,較佳為使用多核分枝型化合物。又, 21 200923584 上述含酚性羥基之化合物於3 5 0 n m波長處之克吸光係數較 佳為1以下。藉此,感光性樹脂組成物可獲得更高之敏感 度,可提高製成層間絕緣膜時之透射率(透明性)。 進而,上述含酚性羥基之化合物之分解溫度更佳為 3 0 0 °C以上。藉此,可確保層間絕緣膜之透明性。 作為此種(B)成分,尤其適宜使用1-[1-(4 -羥基苯 基)異丙基]-4-[1,卜雙(4-羥基苯基)乙基]苯之重氮萘醌 磺酸酯化物。進而,該感光劑可使經時穩定性保持良好。 (B)成分之含量,相對於總固體成分,為10質量% 〜4 0質量%,較佳為2 0質量%〜3 0質量%。 藉由使(B)成分之含量為10質量%以上,可提高解析 度。又,可降低形成圖案後圖案之膜減少量。又,藉由使 (B)成分之含量為40質量%以下,可賦予適度的敏感度或 透射率。 [有機溶劑(C )] 為了改善塗佈性或者調整黏度,本發明之感光性樹脂 組成物亦可含有有機溶劑(C )(以下,亦稱為(C )成分)。 作為(C)成分,可舉出:笨、甲苯、二甲苯、曱基乙 基酮、丙酮、甲基異丁基酮、環己酮、曱醇、乙醇、丙醇、 丁醇、己醇、環己醇、乙二醇、二乙二醇、丙三醇、乙二 醇單曱醚、乙二醇單乙醚、丙二醇單甲醚、丙二醇單乙醚、 二乙二醇單曱醚、二乙二醇單乙醚、二乙二醇二甲醚、二 乙二醇二乙醚、乙酸 3 -甲氧基丁酯(MA)、3 -甲氧基丁醇 22 200923584 (BM)、乙酸3 -曱基-3 -曱氧基丁酯、丙二醇單曱醚乙酸酯 (PGMEA ) '丙二醇單曱醚丙酸酯、丙二醇單乙醚丙酸酯、 碳酸甲酯、碳酸乙酯、碳酸丙酯、碳酸丁酯或者該等之混 合物等。其中,以使用MA或MA與BM的混合溶劑為佳。 有機溶劑(C )之使用量並無特別限定,以能夠塗佈於 基板等上的濃度,根據塗佈膜的厚度而適當設定。具體而 言,較佳為,以感光性樹脂組成物之固體成分濃度於1 0 質量50質量%之範圍内、較佳為於15質量35質量°/〇 範圍内之方式來使用有機溶劑(C )。 [其他(D)] 又,本發明之感光性樹脂組成物亦可含有界面活性 劑、或敏化劑、消泡劑、交聯劑等各種添加劑。 作為界面活性劑可為先前公知者,可舉出:陰離子系、 陽離子系、非離子系等化合物。具體而言,可舉出:X - 7 0 - 0 9 0 (商品名,信越化學工業公司製造)等。藉由添加界面活 性劑,可提高塗佈性、平坦性。 作為敏化劑,可使用先前公知之正型光阻中所使用 者。例如可舉出:分子量為1 〇 〇 〇以下之具有酚性羥基之化 合物等。 作為上述消泡劑,可為先前公知者,可舉出:石夕系化 合物、氟系化合物。 又,作為交聯劑,可舉出具有乙烯性不飽和鍵之聚合 性化合物。作為此種化合物,其中,單官能、2官能或者3 23 200923584 官能以上之(曱基)丙烯酸酯之聚合性較佳,就提高所得圖 案狀薄膜強度之因素考量,可較佳地用。 作為上述單官能(甲基)丙稀酸酯,例如可舉出:(曱基) 丙稀酸2 -經基乙酯、卡必醇(甲基)丙稀酸酯、(曱基)丙稀 酸酯異冰片酯、(曱基)丙稀酸3 -甲氧基丁酯、2-(曱基)丙 烯醯氧基乙基2 -羥基丙基鄰苯二甲酸酯等。作為其市售 品’例如可舉出:Aronix M-101、 Aronix M-lll、 Aronix M-114 (東亞合成化學工業股份公司製造);KAYARAD TC-1 10S、KAYARAD TC-12 0S (日本化藥股份公司製造); BISC0AT 158、BISC0AT 2311 (大阪有機化學工業股份公司 製造)。 作為上述2官能(曱基)丙烯酸酯,例如可舉出:乙二 醇(曱基)丙烯酸酯、1,6 -己二醇二(曱基)丙烯酸酯、1,9-壬二醇二(曱基)丙烯酸酯、聚丙二醇二(曱基)丙烯酸酯、 四乙二醇二(甲基)丙烯酸酯、二苯氧基乙醇苐二丙烯酸酯 (bisphenoxyethano 1 fluorene diacrylate)等。作為其 市售品,例如可舉出:Aronix M-210、Aronix M-240、Aronix M-6200 (東亞合成化學工業股份公司製造);KAYARAD HDDA、KAYARAD HX-220、KAYARAD R-604 (曰本化藥股份公 司製造);BISCOAT 260 ' BISCOAT 312、BISCOAT 335HP (大 阪有機化學工業股份公司製造)等。 作為上述 3官能以上之(甲基)丙烯酸酯,例如可舉 出·三羥曱基丙烷三(曱基)丙烯酸酯、季戊四醇三(曱基) 丙烯酸酯、三((曱基)丙烯醯氧基乙基)磷酸酯、季戊四醇 24 200923584 四(曱基)丙烯酸酯、二季戊四醇五(曱基)丙烯酸酯、二季 戊四醇六(曱基)丙烯酸酯等。作為其市售品,例如可舉出: Aronix M-309 、 Aronix M-400 、 Aronix M-402 、 Aronix M-40 5 ' Aron i x M-45 0、Aronix M-7100、Aronix M-8 0 3 0、 Aronix M-8060 (東亞合成化學工業股份公司製造); KAYARAD TMPTA、 KAYARAD DPHA、 KAYARAD DPCA-20、 KAYARAD DPCA-30、KAYARAD DPCA-60、KAYARAD DPCA-120 (曰本化 藥股份公司製造);BISC0AT 2 9 5、BISC0AT 3 0 0、BISC0AT 360、BISCOAT GPT、BISCOAT 3PA、BISC0AT 400 (大阪有 機化學工業股份公司製造)等。該等交聯劑可單獨使用或 者組合使用。 再者,本發明之感光性樹脂組成物,因含有上述驗溶 性成分(A ),故即使不添加上述交聯劑亦可獲得充分的熱 硬化性,可形成良好的層間絕緣膜。 本發明之感光性樹脂組成物,例如可藉由以下方法來 製備:利用輥磨機、球磨機、砂磨機等攪拌機將(A )成分、 (B)成分、(C)成分以及(D)成分加以混合(分散以及 混練)’根據需要利用5 era薄膜過據器等過濾器進行過 濾。 本發明之感光性樹脂組成物’可適用於形成液晶顯示 元件、積艘電路元件、固體攝像元件等電子零件中之用以 使配置成層狀的配線間絕緣而設置之層間、絕、缘膜。 [層間絕緣膜之形成方法] 25 200923584 以下,就使用本發明之感光性樹脂組成物形成層間 緣膜之方法加以說明。形成層間絕緣膜之方法包括下列 驟:於基板上塗佈感光性樹脂組成物之塗佈步驟、對塗 後的上述感光性樹脂組成物進行選擇性曝光之曝光步驟 在上述曝光後利用鹼性顯影液進行顯影之顯影步驟。 以下,就各步驟加以說明 首先,於塗佈步驟中,利用旋轉器、輥塗機、喷塗携 狹缝塗佈機(slitcoater)等將本發明之感光性樹脂組 物塗佈於基板等支持體上,使其乾燥,而形成感光性樹 組成物層。作為上述基板,例如可舉出:具備透明導電 路等配線且根據需要具備黑色矩陣、彩色濾光片、偏光 等之玻璃板、.梦基板等。 作為塗佈有感光性樹脂組成物之基板之乾燥方法, 如可為下列方法中之任一方法:(1 )利用加熱板於8 0 °C 1 2 0 °C的溫度進行6 0秒〜1 2 0秒乾燥之方法,(2 )於室 放置數小時〜數日之方法,(3)置於熱風加熱器或紅外 加熱器中數十分鐘〜數小時而除去溶劑之方法。又,上 感光性樹脂組成物層之膜厚並無特別限定,較佳為1. 0 m〜5.0 /zm左右。 繼而,於曝光步驟中,介隔特定的光罩進行曝光。 曝光係藉由照射紫外線、準分子雷射光等活性能量線而 行。作為該活性能量線之光源,例如可舉出:低壓水銀焊 高壓水銀燈、超高壓水銀燈、化學燈、準分子雷射產生 置等。進行照射之能量線量,亦視感光性樹脂組成物的 絕 步 佈 成 脂 電 板 例 /-S»/ 溫 線 述 β 該 進 、 裝 組 26 200923584 成而不同,例如為30 mJ/cm2〜2000 mJ/cm2左右即可。 繼而,於顯影步驟中,利用顯影液對經曝光之感光性 樹脂組成物層進行顯影,而形成圖案。作為顯影液,係使 用1質量%〜3質量%之氫氧化四曱基銨(以下,亦稱為TMAH ) 水溶液。TMAH水溶液之濃度更佳為2質量%〜2. 5質量%, 最佳為通用品之濃度即2. 3 8質量%。藉由使顯影液之濃度 為3質量%以下,可減少所形成圖案之膜減少量。 繼而,使上述圖案加熱硬化。作為該加熱硬化之溫度, 例如較佳為1 5 0 °C〜2 5 0 °C。 [實施例] [實施例1 ] 利用(C )進行調整並進行混合以使包含下述成分(A )、 (B) > ( D)之固體成分的濃度達到2 5質量%,而製備感光 性樹脂組成物。 (A )成分:下述式之結構單元(a -1 -1 ):結構單元 (a-2-l ):結構單元(a-3-l ):結構單元(a-4-l ) = 31 : 3 9 : 2 0 : 1 0 (莫耳比)之樹脂(重量平均分子量1 1 5 0 0 ) 8 0 質量份 [化6] 27 200923584Further, it is also possible to use anthraquinone sulfonium chloride and a compound having a hydroxyl group or an amine group (for example, phenol, p-methoxyphenol, dinonylphenol, hydroquinone, bisphenol A, naphthol, ortho-benzene) Phenol, pyrogallol, pyrogallol monomethyl ether, pyrogallol-1, 3-dioxime ether, gallic acid, gallic acid which is esterified or etherified with a part of hydroxyl groups remaining, A reaction product of aniline, p-aminodiphenylamine or the like. These may be used singly or in combination of two or more. The diazonium-containing compound can be produced, for example, by the following method: in the presence of a triethanolamine, a carbonic acid test, or a hydrogencarbonate test in a suitable solvent such as dioxane The triphenyl-type compound is subjected to a condensation reaction with naphthoquinone-1,2-diazo-5-sulfonyl chloride or naphthoquinone-1,2-diazo-4-sulfonyl chloride for complete acetification or Part of the purpose. As the diazonium-containing compound, a diazonaphthoquinone sulfonate is preferred. Further, as the component (B), a non-benzophenone-containing compound containing a diazo group is preferably used, and a multinuclear branched compound is preferably used. Further, 21 200923584 The phenolic hydroxyl group-containing compound preferably has a gram extinction coefficient of 1 or less at a wavelength of 350 nm. Thereby, the photosensitive resin composition can obtain higher sensitivity and can improve the transmittance (transparency) when the interlayer insulating film is formed. Further, the decomposition temperature of the phenolic hydroxyl group-containing compound is more preferably 300 ° C or higher. Thereby, the transparency of the interlayer insulating film can be ensured. As such a component (B), diazo naphthalene of 1-[1-(4-hydroxyphenyl)isopropyl]-4-[1,b-bis(4-hydroxyphenyl)ethyl]benzene is particularly preferably used. An oxime sulfonate. Further, the sensitizer can maintain good stability over time. The content of the component (B) is from 10% by mass to 40% by mass, preferably from 20% by mass to 30% by mass, based on the total solid content. By setting the content of the component (B) to 10% by mass or more, the resolution can be improved. Further, the amount of film reduction of the pattern after patterning can be reduced. Further, by setting the content of the component (B) to 40% by mass or less, an appropriate sensitivity or transmittance can be imparted. [Organic solvent (C)] The photosensitive resin composition of the present invention may contain an organic solvent (C) (hereinafter also referred to as a component (C)) in order to improve coatability or adjust viscosity. Examples of the component (C) include stupid, toluene, xylene, mercaptoethyl ketone, acetone, methyl isobutyl ketone, cyclohexanone, decyl alcohol, ethanol, propanol, butanol, and hexanol. Cyclohexanol, ethylene glycol, diethylene glycol, glycerol, ethylene glycol monoterpene ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, diethylene glycol monoterpene ether, diethylene glycol Alcohol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, 3-methoxybutyl acetate (MA), 3-methoxybutanol 22 200923584 (BM), 3-mercaptoacetate- 3-methoxy butyl acrylate, propylene glycol monoterpene ether acetate (PGMEA ) 'propylene glycol monoterpene ether propionate, propylene glycol monoethyl ether propionate, methyl carbonate, ethyl carbonate, propyl carbonate, butyl carbonate or Mixtures of these, etc. Among them, a mixed solvent of MA or MA and BM is preferably used. The amount of the organic solvent (C) to be used is not particularly limited, and the concentration which can be applied to the substrate or the like is appropriately set depending on the thickness of the coating film. Specifically, it is preferred to use an organic solvent in such a manner that the solid content concentration of the photosensitive resin composition is in the range of 10% by mass and 50% by mass, preferably 15 parts by mass or less by mass. ). [Others (D)] The photosensitive resin composition of the present invention may contain various additives such as a surfactant, a sensitizer, an antifoaming agent, and a crosslinking agent. The surfactant can be a conventionally known one, and examples thereof include compounds such as anionic, cationic, and nonionic. Specifically, X - 7 0 - 0 9 0 (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.) and the like are mentioned. By adding an interface active agent, coatability and flatness can be improved. As the sensitizer, those used in the previously known positive type resist can be used. For example, a compound having a phenolic hydroxyl group having a molecular weight of 1 〇 〇 or less may be mentioned. The antifoaming agent may be a conventionally known one, and examples thereof include a Shishi compound and a fluorine compound. Further, examples of the crosslinking agent include a polymerizable compound having an ethylenically unsaturated bond. As such a compound, among them, a monofunctional, bifunctional or (23) 200923584 functional or higher (mercapto) acrylate having a polymerizability is preferred, and a factor for increasing the strength of the resulting film-like film can be preferably used. As the monofunctional (meth) acrylate, for example, (mercapto) acrylate 2-ethylidene ethyl ester, carbitol (meth) acrylate, (mercapto) propylene Isobornyl ester, (3-mercapto)acrylic acid 3-methoxybutyl ester, 2-(indenyl)acryloxyethyl 2-hydroxypropyl phthalate, and the like. As a commercial item, for example, Aronix M-101, Aronix M-lll, Aronix M-114 (manufactured by East Asia Synthetic Chemical Industry Co., Ltd.); KAYARAD TC-1 10S, KAYARAD TC-12 0S (Japanese Chemicals) Manufactured by the company); BISC0AT 158, BISC0AT 2311 (manufactured by Osaka Organic Chemical Industry Co., Ltd.). Examples of the above-mentioned bifunctional (fluorenyl) acrylate include ethylene glycol (mercapto) acrylate, 1,6-hexanediol bis(indenyl) acrylate, and 1,9-nonanediol bis ( Mercapto acrylate, polypropylene glycol di(decyl) acrylate, tetraethylene glycol di(meth) acrylate, bisphenoxyethano 1 fluorene diacrylate, and the like. As a commercial item, for example, Aronix M-210, Aronix M-240, Aronix M-6200 (manufactured by East Asian Synthetic Chemical Industry Co., Ltd.); KAYARAD HDDA, KAYARAD HX-220, KAYARAD R-604 (曰本Manufactured by Chemical Pharmaceutical Co., Ltd.; BISCOAT 260 'BISCOAT 312, BISCOAT 335HP (manufactured by Osaka Organic Chemical Industry Co., Ltd.), etc. Examples of the above-mentioned trifunctional or higher (meth) acrylate include tris(hydroxyl) propane tri(indenyl) acrylate, pentaerythritol tris(fluorenyl) acrylate, and tris((fluorenyl) propylene oxy group. Ethyl)phosphate, pentaerythritol 24 200923584 tetrakis(yl) acrylate, dipentaerythritol penta(indenyl) acrylate, dipentaerythritol hexakisyl acrylate, and the like. As a commercial item, for example, Aronix M-309, Aronix M-400, Aronix M-402, Aronix M-40 5 ' Aron ix M-45 0, Aronix M-7100, Aronix M-8 0 3 0, Aronix M-8060 (manufactured by East Asia Synthetic Chemical Industry Co., Ltd.); KAYARAD TMPTA, KAYARAD DPHA, KAYARAD DPCA-20, KAYARAD DPCA-30, KAYARAD DPCA-60, KAYARAD DPCA-120 (manufactured by Sakamoto Chemical Co., Ltd.) ; BISC0AT 2 9 5, BISC0AT 3 0 0, BISC0AT 360, BISCOAT GPT, BISCOAT 3PA, BISC0AT 400 (manufactured by Osaka Organic Chemical Industry Co., Ltd.). These crosslinking agents may be used singly or in combination. Further, since the photosensitive resin composition of the present invention contains the above-mentioned test-soluble component (A), sufficient thermosetting property can be obtained without adding the above-mentioned crosslinking agent, and a good interlayer insulating film can be formed. The photosensitive resin composition of the present invention can be produced, for example, by the following methods: (A) component, (B) component, (C) component, and (D) component by a mixer such as a roll mill, a ball mill, or a sand mill. Mixing (dispersion and kneading) 'Filtering with a filter such as a 5 era film passer as needed. The photosensitive resin composition of the present invention can be applied to an interlayer, a film or a film which is provided in an electronic component such as a liquid crystal display device, a chip circuit device or a solid-state image sensor for insulating a wiring layer arranged in a layer. . [Method of Forming Interlayer Insulating Film] 25 200923584 Hereinafter, a method of forming an interlayer film using the photosensitive resin composition of the present invention will be described. The method of forming an interlayer insulating film includes the steps of: applying a coating step of coating a photosensitive resin composition on a substrate, and performing an exposure step of selectively exposing the coated photosensitive resin composition after the exposure to use an alkali development after the above exposure The developing step of developing the liquid. Hereinafter, each step will be described. First, in the coating step, the photosensitive resin composition of the present invention is applied to a substrate or the like by a spinner, a roll coater, a spray coater or a slit coater. The body is dried to form a photosensitive tree composition layer. For example, a glass plate or a matte substrate having a wiring such as a transparent conductive path and a black matrix, a color filter, or a polarizing light, if necessary, may be used. The drying method of the substrate coated with the photosensitive resin composition may be any one of the following methods: (1) using a hot plate at a temperature of 80 ° C 1 2 0 ° C for 60 seconds to 1 The method of drying for 20 seconds, (2) the method of placing in the chamber for several hours to several days, and (3) the method of removing the solvent by placing it in a hot air heater or an infrared heater for several tens of minutes to several hours. Further, the film thickness of the upper photosensitive resin composition layer is not particularly limited, but is preferably about 1.0 m to 5.0 /zm. Then, in the exposure step, exposure is performed by interposing a specific mask. The exposure is performed by irradiating an active energy ray such as ultraviolet rays or excimer laser light. Examples of the light source of the active energy ray include a low pressure mercury welding high pressure mercury lamp, an ultra high pressure mercury lamp, a chemical lamp, and an excimer laser generating device. The amount of energy ray to be irradiated is also determined by the example of a stepwise cloth-forming resin plate of a photosensitive resin composition/-S»/temperature line β, which is different from, for example, 30 mJ/cm2 to 2000. It can be around mJ/cm2. Then, in the developing step, the exposed photosensitive resin composition layer is developed with a developing solution to form a pattern. As the developer, an aqueous solution of tetramethylammonium hydroxide (hereinafter also referred to as TMAH) of 1% by mass to 3% by mass is used. 8%质量质量。 The concentration of the concentration of the general solution is 2. 3 8 % by mass. By setting the concentration of the developer to 3% by mass or less, the amount of film reduction of the formed pattern can be reduced. Then, the above pattern is heat-hardened. The temperature for the heat curing is, for example, preferably from 1 50 ° C to 2 50 ° C. [Examples] [Example 1] The composition was adjusted by (C) and mixed so that the concentration of the solid component containing the following components (A), (B) > (D) was 25 mass%, and the photosensitive film was prepared. Resin composition. (A) component: structural unit of the following formula (a -1 -1 ): structural unit (a-2-l): structural unit (a-3-l): structural unit (a-4-l) = 31 : 3 9 : 2 0 : 1 0 (Morby) resin (weight average molecular weight 1 1 5 0 0 ) 8 0 parts by mass [Chem. 6] 27 200923584

(a-1-1) (a-2-1) (a-3-1) (a-4-1) (B) 成分:卜[1-(4-羥基苯基)異丙基]-4-[l,:l-雙(4-羥基苯基)乙基]苯-1,2 -重氮萘醌-5 -磺酸酯(酯化率67%) 2 0質量份 (C) 成分:乙酸3 -曱氧基丁酯 (D )成分:界面活性劑(商品名:X - 7 0 - 0 9 3 ) 0.1 質量份(a-1-1) (a-2-1) (a-3-1) (a-4-1) (B) Component: Bu [1-(4-hydroxyphenyl)isopropyl]-4 -[l,:l-bis(4-hydroxyphenyl)ethyl]benzene-1,2-diazonaphthoquinone-5-sulfonate (esterification rate 67%) 20 parts by mass (C) Ingredients: 3-methoxypropenyl acetate (D) component: surfactant (trade name: X - 7 0 - 0 9 3 ) 0.1 parts by mass

此處’上述 1_[1-(4 -經基苯基)異丙基]-4-[1,1-雙 (4-羥基苯基)乙基]苯之熱分解溫度為3 65°C,於波長350 nm處之克吸光係數為0.003。 [實施例2 ] 將(A )成分替換成下述成分,除此以外藉由與實施例 1同樣之方法來製備感光性樹脂組成物。 (A )成分:結構單元(a- 1 -1 ):結構單元(a-2- 1 ): 下述式之結構單元(a-3-2):結構單元(a-4-1) = 31: 39: 28 200923584 20 : 1 0 (莫耳比)之樹脂(重量平均分子量1 3 5 0 0 ) 80 質量份 [化7]Here, the thermal decomposition temperature of the above 1_[1-(4-pyridylphenyl)isopropyl]-4-[1,1-bis(4-hydroxyphenyl)ethyl]benzene is 3 65 ° C, The gram absorption coefficient at a wavelength of 350 nm is 0.003. [Example 2] A photosensitive resin composition was prepared in the same manner as in Example 1 except that the component (A) was replaced with the following components. (A) component: structural unit (a-1 -1 ): structural unit (a-2- 1 ): structural unit of the following formula (a-3-2): structural unit (a-4-1) = 31 : 39: 28 200923584 20 : 1 0 (Mohrby) resin (weight average molecular weight 1 3 5 0 0 ) 80 parts by mass [Chem. 7]

\si(OC2H5)3 0-3-2) [比較例1 ] 將實施例1中之(A )成分替換成下述成分,除此以外 藉由與實施例1同樣之方法來製備感光性樹脂組成物。 (A )成分:結構單元(a-1-l ):結構單元(a-2-l ) =44 : 56(莫耳比)之樹脂(重量平均分子量1 8 0 0 0 ) 8 0 質量份 [比較例2 ] 將實施例1中之(A )成分替換為下述成分,除此以外 藉由與實施例1同樣之方法來製備感光性樹脂組成物。 (A )成分··結構單元(a -卜1 ) ··結構單元(a - 2 - 1 ): 結構單元(a-4-l) = 35: 45: 20(莫耳比)之樹脂(重量 29 200923584 平均分子量1 1 3 0 0 ) 8 0質量份 (硬化膜形成方法) 利用旋轉器將上述所製備之感光性樹脂組成物塗佈於 6英吋之矽基板(信越化學公司製造:低電阻品)上使膜 厚成為1 μ m,然後於加熱板上於11 0 °C使之乾燥2分鐘 後,利用超高壓水銀燈進行全面曝光,於無塵烘箱(c 1 ean oven)中於230 °C使之加熱硬化30分鐘。 (圖案形成方法) 利用旋轉器將上述所製備之感光性樹脂組成物塗佈於 圾璃·&板(道康寧 (Dow Corning) 公司製造 0.7 mmλ 1 G mm (厚度χ直徑))上使膜厚成為3.4 /zm,然後於加熱板 上於110 °C使之乾燥2分鐘,而獲得塗佈膜。介隔5 //m 線-圖案/ 5 /z m間隙-圖案之正型光罩圖案,使用鏡面投影 對準曝光器(Mirror Projection Aligner)(商品名: MPA- 6 0 0FA,佳能(Canon )公司製造)對該塗佈膜進行曝 光。 ' 繼而,使之於2.38質量%之氫氧化四曱基銨水溶液(顯 影液)中浸潰1分鐘進行顯影,經由純水沖洗干淨而除去 不需要的部分,然後利用超高壓水銀燈進行全面曝光,於 無塵烘箱中於2 3 0 °C使之熱硬化3 0分鐘,而獲得圖案。 [評價] 對上述實施例以及比較例之感光性樹脂組成物進行評 價。係對硬化膜之介電常數、敏感度、以及硬化膜之透射 30 200923584 率進行評價。評價方法如下所述。 介電常數:對於上述所獲得之硬化膜,使用SSM 49 5CV SYSTEM (日本SSM公司製造)測定介電常數。 透射率··對於利用上述圖案形成方法所形成之圖案, 使用分光光度計(商品名:UV-2 5 0 0PC,島津製作所公司製 造)測定透射率,將於波長400nm〜800nm處之最低透射 率作為透射率。 該等之結果示於表1。 [表1 ] 介電常數(〗MHz') 璋射栾 實施例1 4.0 95 實施例2 4.0 95 比較例1 4.5 94 比較例2 4.4 94 由上述内容可知,本發明之感光性樹脂組成物與先前 之感光性樹脂組成物相比,介電常數較小,因此具有較高 的絕緣性。 【圖式簡單說明】 無 【主要元件符號說明】 無 31\si(OC2H5)3 0-3-2) [Comparative Example 1] A photosensitive resin was prepared in the same manner as in Example 1 except that the component (A) in Example 1 was replaced with the following components. Composition. (A) component: structural unit (a-1-l): structural unit (a-2-l) = 44: 56 (mole ratio) resin (weight average molecular weight 1 800) 0 0 parts by mass [ Comparative Example 2 A photosensitive resin composition was prepared in the same manner as in Example 1 except that the component (A) in Example 1 was replaced with the following components. (A) Component··Structural unit (a - Bu 1) ··Structural unit (a - 2 - 1 ): Structural unit (a-4-l) = 35: 45: 20 (mole ratio) resin (weight 29 200923584 Average molecular weight 1 1 3 0 0 ) 80 parts by mass (hardened film formation method) The above-prepared photosensitive resin composition was applied to a 6-inch ruthenium substrate by a spinner (manufactured by Shin-Etsu Chemical Co., Ltd.: low resistance) The film was made to have a film thickness of 1 μm, and then dried on a hot plate at 110 ° C for 2 minutes, and then subjected to full exposure using an ultrahigh pressure mercury lamp at 230 ° in a clean oven (c 1 ean oven). C was allowed to heat harden for 30 minutes. (Pattern forming method) The photosensitive resin composition prepared above was applied to a glass & plate (manufactured by Dow Corning Co., Ltd., 0.7 mm λ 1 G mm (thickness χ diameter)) to make a film thickness. It became 3.4 /zm, and then it was dried at 110 ° C for 2 minutes on a hot plate to obtain a coating film. Mirror Projection Aligner (product name: MPA-600 0FA, Canon), separated by 5 //m line-pattern/ 5 /zm gap-patterned positive mask pattern The coating film is exposed to light. Then, it was immersed in a 2.38 mass% aqueous solution of tetramethylammonium hydroxide (developing solution) for 1 minute for development, rinsed with pure water to remove unnecessary portions, and then subjected to full exposure using an ultrahigh pressure mercury lamp. The pattern was obtained by heat-hardening at 30 ° C for 30 minutes in a dust-free oven. [Evaluation] The photosensitive resin compositions of the above examples and comparative examples were evaluated. The dielectric constant, sensitivity, and transmission of the cured film were evaluated for the rate of 200923584. The evaluation method is as follows. Dielectric constant: The dielectric constant of the cured film obtained above was measured using SSM 49 5CV SYSTEM (manufactured by SSM Corporation, Japan). Transmittance · For the pattern formed by the pattern forming method, the transmittance is measured using a spectrophotometer (trade name: UV-2500PC, manufactured by Shimadzu Corporation), and the lowest transmittance at a wavelength of 400 nm to 800 nm. As the transmittance. The results of these are shown in Table 1. [Table 1] Dielectric constant (〖MHz') 栾射栾 Example 1 4.0 95 Example 2 4.0 95 Comparative Example 1 4.5 94 Comparative Example 2 4.4 94 From the above, the photosensitive resin composition of the present invention is previously Since the photosensitive resin composition has a smaller dielectric constant, it has higher insulation properties. [Simple description of the diagram] None [Key component symbol description] None 31

Claims (1)

200923584 十、申請專利範圍: 1 · 一種層間絕緣膜用感光性樹脂組成物,其含有鹼溶性樹脂成 分(A )及感光劑(B ); 上述驗溶性樹脂成分(A )含有共聚物(A1 ),該共聚物(A1 ) 含有含酸性基之結構單元(a丨)、含交聯性基之結構單元(a2 )、 以及含烷氧基矽烷基之結構單元(a3)。 2.如申請專利範圍第丨項所述之層間絕緣膜用感光性樹200923584 X. Patent application scope: 1 . A photosensitive resin composition for interlayer insulating film, comprising an alkali-soluble resin component (A) and a sensitizer (B); and the above-mentioned solvent-soluble resin component (A) contains a copolymer (A1) The copolymer (A1) contains a structural unit (a) containing an acidic group, a structural unit (a2) containing a crosslinkable group, and a structural unit (a3) containing an alkoxyalkyl group. 2. Photosensitive tree for interlayer insulating film as described in the scope of application of the patent application 脂組成物,其中上述含烷氧基矽烷基之結構單元(以)係 以通式(a-3)來表示,a lipid composition in which the above structural unit containing an alkoxyalkyl group is represented by the formula (a-3), (a-3) [上述通式中,R4表示氫原子或者甲基, 表示碳數(a-3) [In the above formula, R4 represents a hydrogen atom or a methyl group, and represents a carbon number. /-Sfc/ 之伸烷基,R6、R7以及R8可彼此不同亦可相同, 5之烧氧基或烷基,R6、R7以及R8中之至少1個 且表示碳數 為炫氧基]。 3·如申請專利範圍帛!項所述之層間絕緣膜用感光性樹腊組成 物,其中上述鹼溶性樹脂成分(A)僅含有含酚性羥基之結構單 元作為含酸性基之結構單元。 32 200923584 4.如申„專利乾圍帛i項所述之層間絕緣膜用感光性樹脂組成 物’其中上述含酸性基之結構單元U1)係料式U])來表 示, [化2]/-Sfc / alkylene, R6, R7 and R8 may be different from each other or the same, 5 alkoxy or alkyl, at least 1 of R6, R7 and R8 and represent a carbon number of a methoxy group. 3. If you apply for a patent range! The photosensitive resin composition for an interlayer insulating film according to the invention, wherein the alkali-soluble resin component (A) contains only a structural unit containing a phenolic hydroxyl group as a structural unit containing an acidic group. 32 200923584 4. The photosensitive resin composition for interlayer insulating film described in the patent dry 帛 i, wherein the acidic group-containing structural unit U1) is expressed by the formula U]), [Chemical 2] (a-1) 數1〜 R2時, 示〇〜 [上述通式中,R°表示氫原子或者甲基4表示單鍵或者石炭 5之伸烷基,R2表示碳數卜5之烷基’當存在2個以上之 該等R2可彼此不同亦可相同,a表示卜5之整數,b表 4之整數,a+b為5以下]。(a-1) When the number is 1 to R2, 〇~ [In the above formula, R° represents a hydrogen atom or methyl 4 represents a single bond or an alkylene group of carbon 5, and R 2 represents an alkyl group of carbon number 5] When there are two or more of these R2, they may be different from each other, and a may be an integer of b, b is an integer of Table 4, and a+b is 5 or less]. 物 表示 *月專利範圍第1項所述之層間絕緣膜用感光性樹 “中上述含交聯性基之結構單元(a2)係以通式(a % > [化3] 33 200923584The photosensitive layer for the interlayer insulating film described in the first paragraph of the patent range of the first aspect of the invention is "the above-mentioned structural unit (a2) containing a crosslinkable group is a general formula (a % > [化3] 33 200923584 (a-2) [上述通式中,R3表示氫原子或者甲基]。 6.如申請專利範圍帛!項所述之層㈤絕緣膜用⑨光性樹脂組成 物’其中上述共聚物(A1 )中之上述含酸性基之結構單元(ai ) 的含量為20莫耳%〜70莫耳%,上述含交聯性基之結構單元(a2) 的含量為20莫耳%〜70莫耳%,上述含烷氧基矽烷基之結構單元 (a3 )的含量為1莫耳%〜40莫耳%。 34 200923584 七、指定代表圖: (一) 本案指定代表圖為:無。 (二) 本代表圖之元件符號簡單說明: 無(a-2) [In the above formula, R3 represents a hydrogen atom or a methyl group]. 6. If you apply for a patent range! The layer (5) is a 9-light resin composition for an insulating film, wherein the content of the acidic group-containing structural unit (ai) in the copolymer (A1) is 20 mol% to 70 mol%, and the above-mentioned The content of the structural unit (a2) of the crosslinkable group is from 20 mol% to 70 mol%, and the content of the alkoxyalkyl group-containing structural unit (a3) is from 1 mol% to 40 mol%. 34 200923584 VII. Designation of representative representatives: (1) The representative representative of the case is: None. (2) A brief description of the component symbols of this representative figure: None 八、本案若有化學式時,請揭示最能顯示發 明特徵的化學式:8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention:
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI773645B (en) * 2015-07-30 2022-08-11 日商東京應化工業股份有限公司 Photosensitive composition, pattern forming method, permanent film, and color filter for CMOS image sensor

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5332349B2 (en) * 2008-07-03 2013-11-06 Jnc株式会社 Photosensitive polymer composition
JP5176768B2 (en) * 2008-08-06 2013-04-03 Jsr株式会社 Positive photosensitive insulating resin composition
JP5375412B2 (en) * 2009-07-30 2013-12-25 Jsr株式会社 Resin composition for forming fine pattern and method for forming fine pattern
TW201310166A (en) * 2011-08-31 2013-03-01 Everlight Chem Ind Corp Resin and composition thereof for manufacture insulator layer and over coat
JP5935297B2 (en) * 2011-11-09 2016-06-15 Jnc株式会社 Positive photosensitive composition
JP6458236B2 (en) * 2014-09-26 2019-01-30 ナトコ株式会社 Alkali-soluble resin, photosensitive resin composition and use thereof
JP6297992B2 (en) * 2015-02-05 2018-03-20 信越化学工業株式会社 Silicon-containing polymer, silicon-containing compound, resist underlayer film forming composition, and pattern forming method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920008537A (en) * 1990-10-19 1992-05-28 원본미기재 Resist composition
JP3994429B2 (en) * 1998-12-01 2007-10-17 Jsr株式会社 Radiation sensitive resin composition for interlayer insulation film
JP2006159083A (en) * 2004-12-07 2006-06-22 Kanemiya:Kk Separating apparatus of packaged food
KR101068111B1 (en) * 2005-01-27 2011-09-27 주식회사 동진쎄미켐 Photosensitive resin composition
JP2006293326A (en) * 2005-03-15 2006-10-26 Canon Inc Photosensitive composition and manufacturing process of structured material using the composition
JP2006259083A (en) * 2005-03-16 2006-09-28 Tokyo Ohka Kogyo Co Ltd Photosensitive resin composition for interlayer insulation film
JP4644857B2 (en) * 2005-07-22 2011-03-09 昭和電工株式会社 Photosensitive resin composition
JP4670568B2 (en) * 2005-10-03 2011-04-13 Jsr株式会社 Radiation sensitive resin composition and formation of interlayer insulating film and microlens
JP2007133232A (en) 2005-11-11 2007-05-31 Kyocera Chemical Corp Photosensitive thermosetting resin composition and flexible printed wiring board using the same
US20070212556A1 (en) 2006-03-07 2007-09-13 Musa Osama M Curable materials containing siloxane
KR101506535B1 (en) * 2007-02-28 2015-03-27 제이엔씨 주식회사 Positive photosensitive resin composition

Cited By (1)

* Cited by examiner, † Cited by third party
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