TW200907038A - Selective barrier polishing slurry - Google Patents

Selective barrier polishing slurry Download PDF

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Publication number
TW200907038A
TW200907038A TW097128748A TW97128748A TW200907038A TW 200907038 A TW200907038 A TW 200907038A TW 097128748 A TW097128748 A TW 097128748A TW 97128748 A TW97128748 A TW 97128748A TW 200907038 A TW200907038 A TW 200907038A
Authority
TW
Taiwan
Prior art keywords
acid
benzene
weight percent
weight
hydrophilic portion
Prior art date
Application number
TW097128748A
Other languages
English (en)
Chinese (zh)
Inventor
Qian-Qiu Ye
Jinru Bian
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200907038A publication Critical patent/TW200907038A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097128748A 2007-08-03 2008-07-30 Selective barrier polishing slurry TW200907038A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/890,108 US20090032765A1 (en) 2007-08-03 2007-08-03 Selective barrier polishing slurry

Publications (1)

Publication Number Publication Date
TW200907038A true TW200907038A (en) 2009-02-16

Family

ID=40330710

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097128748A TW200907038A (en) 2007-08-03 2008-07-30 Selective barrier polishing slurry

Country Status (5)

Country Link
US (1) US20090032765A1 (https=)
JP (1) JP5323415B2 (https=)
KR (1) KR20090014110A (https=)
CN (1) CN101358108B (https=)
TW (1) TW200907038A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI601794B (zh) * 2012-07-06 2017-10-11 巴地斯顏料化工廠 包含非離子性界面活性劑及含有至少一個酸基團之芳香化合物之化學機械拋光（ｃｍｐ）組合物

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CN101712907A (zh) * 2009-08-26 2010-05-26 辽阳科隆化学品有限公司 一种水溶性硅料切削液的组成和应用组合
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
CN102477258B (zh) * 2010-11-26 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
CN102559061A (zh) * 2010-12-28 2012-07-11 安集微电子（上海）有限公司 含有机酸的硅和铜化学机械平坦化浆料
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
EP2502969A1 (en) * 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
CN102199400A (zh) * 2011-03-25 2011-09-28 江南大学 适用于精细雾化cmp的铜抛光液
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
US20140011362A1 (en) * 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
JP6101444B2 (ja) * 2012-08-01 2017-03-22 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた磁気ディスク用基板の製造方法
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN108588719B (zh) * 2015-10-19 2020-12-04 江苏理工学院 用于铜基钯镍合金镀层退镀的退镀液
US10437313B2 (en) * 2016-06-10 2019-10-08 Apple Inc. Processor unit efficiency control
KR102422952B1 (ko) 2017-06-12 2022-07-19 삼성전자주식회사 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
KR102343435B1 (ko) * 2018-08-08 2021-12-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
JP7607581B2 (ja) * 2019-04-17 2024-12-27 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー タングステンバフ用途のための表面被覆された研削粒子
KR102757075B1 (ko) * 2019-04-24 2025-01-21 주식회사 이엔에프테크놀로지 식각 조성물 및 이를 이용하는 식각 방법
CN114450366B (zh) * 2019-09-24 2024-07-12 弗萨姆材料美国有限责任公司 平面化中的芯片内不均匀性（wid-nu）
CN111004579B (zh) * 2019-11-27 2021-08-06 河北工业大学 用于降低多层铜互连阻挡层cmp缺陷的碱性抛光液及其制备方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP2004231748A (ja) * 2003-01-29 2004-08-19 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing
JP2006202892A (ja) * 2005-01-19 2006-08-03 Jsr Corp 化学機械研磨方法
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TWI385226B (zh) * 2005-09-08 2013-02-11 羅門哈斯電子材料Ｃｍｐ控股公司 用於移除聚合物阻障之研磨漿液
US20070131899A1 (en) * 2005-12-13 2007-06-14 Jinru Bian Composition for polishing semiconductor layers
JP2007194593A (ja) * 2005-12-20 2007-08-02 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI601794B (zh) * 2012-07-06 2017-10-11 巴地斯顏料化工廠 包含非離子性界面活性劑及含有至少一個酸基團之芳香化合物之化學機械拋光（ｃｍｐ）組合物

Also Published As

Publication number Publication date
CN101358108B (zh) 2012-02-01
KR20090014110A (ko) 2009-02-06
CN101358108A (zh) 2009-02-04
JP5323415B2 (ja) 2013-10-23
JP2009049401A (ja) 2009-03-05
US20090032765A1 (en) 2009-02-05

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