CN101358108B - 选择性阻挡层抛光浆液 - Google Patents

选择性阻挡层抛光浆液 Download PDF

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Publication number
CN101358108B
CN101358108B CN2008101312927A CN200810131292A CN101358108B CN 101358108 B CN101358108 B CN 101358108B CN 2008101312927 A CN2008101312927 A CN 2008101312927A CN 200810131292 A CN200810131292 A CN 200810131292A CN 101358108 B CN101358108 B CN 101358108B
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CN
China
Prior art keywords
weight
acid
benzene
slurry
aqueous slurry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101312927A
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English (en)
Chinese (zh)
Other versions
CN101358108A (zh
Inventor
叶倩萩
卞锦儒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN101358108A publication Critical patent/CN101358108A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2008101312927A 2007-08-03 2008-08-04 选择性阻挡层抛光浆液 Expired - Fee Related CN101358108B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/890,108 2007-08-03
US11/890,108 US20090032765A1 (en) 2007-08-03 2007-08-03 Selective barrier polishing slurry

Publications (2)

Publication Number Publication Date
CN101358108A CN101358108A (zh) 2009-02-04
CN101358108B true CN101358108B (zh) 2012-02-01

Family

ID=40330710

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101312927A Expired - Fee Related CN101358108B (zh) 2007-08-03 2008-08-04 选择性阻挡层抛光浆液

Country Status (5)

Country Link
US (1) US20090032765A1 (https=)
JP (1) JP5323415B2 (https=)
KR (1) KR20090014110A (https=)
CN (1) CN101358108B (https=)
TW (1) TW200907038A (https=)

Families Citing this family (20)

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CN101712907A (zh) * 2009-08-26 2010-05-26 辽阳科隆化学品有限公司 一种水溶性硅料切削液的组成和应用组合
US8492277B2 (en) * 2010-03-16 2013-07-23 Rohm And Haas Electronic Materials Cmp Holdings, Inc Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride
CN102477258B (zh) * 2010-11-26 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
CN102559061A (zh) * 2010-12-28 2012-07-11 安集微电子（上海）有限公司 含有机酸的硅和铜化学机械平坦化浆料
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
EP2502969A1 (en) * 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
CN102199400A (zh) * 2011-03-25 2011-09-28 江南大学 适用于精细雾化cmp的铜抛光液
JP2013138053A (ja) * 2011-12-28 2013-07-11 Fujimi Inc 研磨用組成物
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US20140011362A1 (en) * 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
JP6101444B2 (ja) * 2012-08-01 2017-03-22 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた磁気ディスク用基板の製造方法
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN108588719B (zh) * 2015-10-19 2020-12-04 江苏理工学院 用于铜基钯镍合金镀层退镀的退镀液
US10437313B2 (en) * 2016-06-10 2019-10-08 Apple Inc. Processor unit efficiency control
KR102422952B1 (ko) 2017-06-12 2022-07-19 삼성전자주식회사 금속막 연마용 슬러리 조성물 및 이를 이용하는 반도체 장치의 제조 방법
KR102343435B1 (ko) * 2018-08-08 2021-12-24 삼성에스디아이 주식회사 구리 막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 구리 막 연마 방법
JP7607581B2 (ja) * 2019-04-17 2024-12-27 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー タングステンバフ用途のための表面被覆された研削粒子
KR102757075B1 (ko) * 2019-04-24 2025-01-21 주식회사 이엔에프테크놀로지 식각 조성물 및 이를 이용하는 식각 방법
CN114450366B (zh) * 2019-09-24 2024-07-12 弗萨姆材料美国有限责任公司 平面化中的芯片内不均匀性（wid-nu）
CN111004579B (zh) * 2019-11-27 2021-08-06 河北工业大学 用于降低多层铜互连阻挡层cmp缺陷的碱性抛光液及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1793274A (zh) * 2004-12-22 2006-06-28 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光用的选择性浆料
CN1927975A (zh) * 2005-09-08 2007-03-14 罗门哈斯电子材料Cmp控股股份有限公司 可除去聚合物阻挡层的抛光浆液

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3981616B2 (ja) * 2002-10-02 2007-09-26 株式会社フジミインコーポレーテッド 研磨用組成物
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP2004231748A (ja) * 2003-01-29 2004-08-19 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
JP2006202892A (ja) * 2005-01-19 2006-08-03 Jsr Corp 化学機械研磨方法
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
US20070131899A1 (en) * 2005-12-13 2007-06-14 Jinru Bian Composition for polishing semiconductor layers
JP2007194593A (ja) * 2005-12-20 2007-08-02 Fujifilm Corp 金属用研磨液及びそれを用いた研磨方法
JP2007214155A (ja) * 2006-02-07 2007-08-23 Fujifilm Corp バリア用研磨液及び化学的機械的研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1793274A (zh) * 2004-12-22 2006-06-28 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光用的选择性浆料
CN1927975A (zh) * 2005-09-08 2007-03-14 罗门哈斯电子材料Cmp控股股份有限公司 可除去聚合物阻挡层的抛光浆液

Also Published As

Publication number Publication date
KR20090014110A (ko) 2009-02-06
CN101358108A (zh) 2009-02-04
JP5323415B2 (ja) 2013-10-23
JP2009049401A (ja) 2009-03-05
TW200907038A (en) 2009-02-16
US20090032765A1 (en) 2009-02-05

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