TW200901432A - Illuminance detecting component and illuminance detecting apparatus - Google Patents
Illuminance detecting component and illuminance detecting apparatus Download PDFInfo
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- TW200901432A TW200901432A TW097107611A TW97107611A TW200901432A TW 200901432 A TW200901432 A TW 200901432A TW 097107611 A TW097107611 A TW 097107611A TW 97107611 A TW97107611 A TW 97107611A TW 200901432 A TW200901432 A TW 200901432A
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- 239000000758 substrate Substances 0.000 claims abstract description 144
- 238000005286 illumination Methods 0.000 claims description 59
- 238000001514 detection method Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
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- 230000003287 optical effect Effects 0.000 claims description 5
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000009826 distribution Methods 0.000 description 12
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- 229910052751 metal Inorganic materials 0.000 description 11
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- 229920002120 photoresistant polymer Polymers 0.000 description 11
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- 229910052737 gold Inorganic materials 0.000 description 7
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- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
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- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- AZFKQCNGMSSWDS-UHFFFAOYSA-N MCPA-thioethyl Chemical compound CCSC(=O)COC1=CC=C(Cl)C=C1C AZFKQCNGMSSWDS-UHFFFAOYSA-N 0.000 description 1
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- 230000023077 detection of light stimulus Effects 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Light Receiving Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
200901432 九、發明說明： 本申請案係根據及主張2007年3月5日所提出之曰本 專利申請案第2007-054706號及2007年5月π日所提出 之曰本專利申請案第2007 —12649〇號之優先權。在此以提 及方式併入該等日本專利申請案之全部内容。 【發明所屬之技術領域】 本揭露係有關於一種照度偵測零件及一種照度偵測裝 ^ 置，以及更特別地，是有關於一種照度偵測零件及一種用 以偵測由外部所照射之光的照度之照度偵測裴置。 【先前技術】 在相關技藝中，在製造一像印刷基板之佈線基板時，如 圖1所示’ 一具有數位微鏡裝置（DMD) 106之曝光裝置ι〇〇 '用以使一光阻膜或一膜狀光阻曝光。 圖1係在製造一佈線基板時所使用之一曝光裝置的示 意圖。並且’在圖1中，該曝光裝置丨00會每次在一區域 {j〗（以下稱為"光照射區域J”）中曝光’以及K表示光之掃 描方向（以下稱為” κ方向”）。 參考圖1’該曝光裝置100包括一平台101、一光源1〇5、 該數位微鏡裝置（DMD)1()6、一吸光板107及一投影透鏡 108 ° 該平台101係提供用以固定一佈線基板102，而在該佈 線基板102上形成有一光阻膜1〇3。該光源105係傾斜地 配置在該DMD 106之下侧。該光源105係提供用以照射光 至該 DMD 106。 97107611 200901432 §亥DMD 10 6係長:供於該平台1 〇 1上方，以面對該佈線基 板102。該DMD 106具有複數個微鏡，以接收自該光源1〇5 所發射之光。當輸入對應於所要暴露之圖案的資料（電信 號）時，該DMD 106傾斜該等微鏡以回應該資料，進而反 射自該光源105所發射之光至該光阻膜1〇3及曝光該光阻 .膜 103。 •該吸光板107係傾斜地配置在該DMD1〇6之下侧。該吸 光板1〇7係提供用以吸收該曝光所不需要之反射光。該投 (影透鏡丨08係配置於該⑽D 106與該佈線基板1〇2之間。該 投景々透鏡108係提供用以調整光行進方向、光照射區域j等。 當使用上述所構成之曝光裝置1〇〇來實施該光阻膜1〇3 之曝光製程時，重要的是在顯影製程後圖案化該光阻膜 103成為一期望形狀時，識別在佈線基板丨〇2之平面上之 光的照度分佈。 圖2所示之一照度偵測裝置112做為在相關技藝中用以 ◎偵測在該佈線基板1〇2之平面上之光的照度之照度偵測 裝置。 圖2係描述在相關技藝中之一照度偵測裝置的圖式，以 及圖3係圖2所示之照度偵測裝置的放大剖面圖。在圖2 中’綱要性地描述該照度偵測裝置112偵測自該曝光裝置 1 〇〇所照射之光的照度之情況。並且，將從圖2省略圖3 所示之佈線圖案116及117的描述。在圖3中，當以一預 疋間隔配置複數個照度偵測單元114時，Pa表示光二極體 122之對準間距（以下稱為π對準間距pA”）。 97107611 7 200901432 參考圖2，在相關技藝中之照度偵測裝置丨丨2包括一對 準板113及複數個照度偵測單元丨丨4。 參考圖2及3 ’該對準板113係提供用以對準上面之複 數個照度偵測單元114及具有一薄板115及該等佈線圖案 116及117。該等佈線圖案116及117係形成於該薄板ιΐ5 •之上表面115A上。該等佈線圖案116及117電性連接至 *該等照度偵測單元114。該等佈線圖案工丨6及j丨7係引導 Θ等照度偵測單元114所偵測之偵測信號的佈線及亦供 應電功率至該等照度偵測單元114。 該等照度偵測單元114之每一照度伯測單元包括一陶 瓷基板121、該光二極體122、一陶瓷框124、一玻璃基 板126及引線128及129。該複數個照度偵測單元114係 配置在該對準板113上，以便以一對準間距Pa配置該等光 二極體122。該陶究基板121具有一陶竟基板本體ΐ3ι及 塾133及134。在該陶竟基板本體131之上表面13u提 〇供該等墊133及134。 在》亥墊上134上提供該光二極體122。該光二極體122 在八上表面側上具有一正電極136及一光接收部138，以 -j在其下表面側上具有-負電極137。該正電極136經由 址金屬線125電性連接至該墊丨33。該光接收部i 係提 仏用以接收自該DMD 1〇6所反射及然後通過該投影透鏡 之光。該負電極137係配置在該墊134上及電性 至該墊134。 該陶瓷框124具有一用以容納該光二極體122之貫穿孔 97107611 8 200901432 124A。該陶瓷框124係配置在該等墊133及i34以及該陶 瓷基板本體131之上表面1314上，以便包圍該光二 122。 藉由疊合一内部形成有該貫穿孔124A之第二綠帶 (green sheet)(此綠帶在燒結後構成該陶瓷框124)於— 上面形成有做為該等墊133及134之導電體的第一綠帶上 (此綠V在燒結後構成該陶瓷基板121)來形成上述陶瓷基 板121及陶瓷框124，以及然後，燒結它們。 ( 該玻璃基板126係成形為一薄板且係提供於該陶瓷框 124上。該玻璃基板126係提供用以使自該曝光裝置丄〇〇 所照射之光通過且亦緊緊地密封一用以容納該光二極體 122之空間L。 該引線128連接至該墊133之位於該陶瓷框124外部的 部分。該引線128係該照度偵測單元114之外部連接端及 經由一烊料141電性連接至該佈線圖案116。因此，該佈 (線圖案116電性連接至該光二極體122之正電極136。 該引線129連接至該墊134之位於該陶瓷框124外部的 部分。該引線129係該照度偵測單元114之外部連接端及 經由一焊料142電性連接至該佈線圖案117。因此，該佈 線圖案117電性連接至該光二極體122之負電極137(見 例如日本專利申請案公告第2〇〇7_27279)。 然而，依據在相關技藝中之照度偵測裝置112，在該對 準板113上配置該複數個上面分別提供有一光二極體122 之照度偵測單元114,以及因此，很難使該等光二極體122 97107611 9 200901432 測自該曝光裝置 之對準間距pA變窄。結果，會存在無法偵 1〇〇所照射之光的照度之詳細分佈的問題 【發明内容】 本發明之一個或多個示範性具體例提 零件及-種照度制裝置，其能價測 ：光的 照度之詳細分佈。 π…狀域 零發明之一個或多個示範性具體例，一種照度偵測 一支撐基板，包括： 一基板本體，由矽所製成；以及 墊，提供於該基板本體之上表面； ^數個光接收元件，電性連接至該等塾及接收從外部所 =射之光’該複數個光接收元件係以陣列方式配置在該上 表面側； 外部連接端’電性連接至該等光接收元件；以及 一半透明構件，提供於該基板本體上， 其中， …在該半透明構件與該基板本體間形成—内部容納有該 複數個光接收元件之密閉空間。 依據該等示範性具體例，該複數個光接收元件係以陣列 方式配置在該支#基板上，以及因此可使該等光接收元件 之對準間距變窄。因此，可偵測從外部所照射之光的照度 之詳細分佈。並且，該基板本體係由矽所構成，以及因此， 在該基板本财可抑_曲。之後，該複數個光接收元件 97107611 10 200901432 準確性配置在該支撐基板之期望位置，以及因此， 可改善由該複數個光接收元件所谓測之光的照度之 f此外，該半透明構件具有一用以容納複數個光接收元 件之凹部，以及係提供於該基板本體上， 該凹部所形成之空間。因此，可防止心…」：式么封 . j防止谷納有该複數個光接 收7L件之空間因外部空氣而受到污染。 •依據本發明m多個轉性具體例，該等墊可 鑛膜所構成。因此，可使該等塾所形成之大小比藉由 υ面形成有該等導電體之綠帶來形成該等墊之情況 (該基板本體係由陶竞所製成之情況）更小。因此，可使該 複數個光接收元件之對準間距進一步變窄。 < 依據本發明之-個或多個示範性具體例，該複數個光接 收疋件之每—光接收㈣可以具有—用以接收該光之光 接收部分’以及可以在該半透明構件之相對於該等光接收 儿件的第一表面上提供一用以遮蔽該光之光遮蔽構件，以 0及可以在減遮蔽構件之相對於”光接收部分的部分 上提供用以使光通過之開口。因此，該複數個光接收元件 只會分別積測對該等光接收元件之每一光接收件的對準 位置所照射之光的照度。結果，可债測在窄範圍之光的照 度。 依據本發明之-個或多個示範性具體例，該等開口之每 -開口的直徑可以比該等光接收部分之每一有效區域的 直徑更小。因此，除該有效區域之外，未將該光照射至該 先接收部。結果，可改善由複數個光接收元件所偵測之光 97107611 11 200901432 的照度之可靠性。 依據本發明之一個或多個示範性具體例，該半透明構件 可以由玻璃所製成，以及可以使該基板本體與該半透明構 件彼此陽極接合。因此，可以密閉方式密封内部容納有複 數個光接收元件之空間。 依據本發明之一個或多個示範性具體例，該支撐基板可 以進一步包括貫穿介層，該等貫穿介層提供以穿過該基板 本體及電性連接至該等墊，以及該等貫穿介層之位在=對 於該基板本體之上表面的下表面上之末端可以電性連接 至該等外部連接端。因此，不同於使用該等引線做為該等 外部連接端之傳統照度偵測零件，可達成該照度偵測零件 之尺寸縮小。 依據本發明之一個或多個示範性具體例，可以在該半透 明構件之相對於該第一表面之第二表面上形成一：反射 塗層，以便防止在該第二表面上反射該光之情況。因此， ( 可偵测對應於該照射光之實際照度。 依據本發明之一個或多個示範性具體例，一種照度 裝置，包括： '又' 複數個照度偵測零件；以及 一對準板，包括： 薄板，該薄板之外部形狀實質上等於一 裝置所曝光之佈線基板；以 線圖案，提供於該薄板上且電性連接至在該等 測零件中所提供之外部連接端 μ 97107611 12 200901432 依據本發明之一個或多個示範性具體例，一種照度偵測 零件包括： 一支撐基板； 一光接收元件，配置在該支撐基板上且具有用以接收從 外部所照射之光的複數個光接收部； —半透明構件，接合至該支撐基板，以便在半透明構件 與該支樓基板間所形成之空間中以密閉方式密封該光接 收兀件’料透明構件係由一用以傳送該光之材料所 成；以及 外部連接端，電性連接至該光接收元件， 其中， 該複數個光接收部係以陣列方式形成於該光接收元件 上。 依據該等示範性具體例，該複數個光接收部係以陣列方 式形成於該支#基板上所配置之光接收元件上，以及因 此’可使該域收元件之對準間距進—步變窄。因此 偵測從外部所照射之㈣照度之詳細分佈。此外，在 :=ΓΓ’不需要對準地在該支撐基板上安裝複數 70 。因此，因為在該支撐基板上安裝該唯一光 接收疋件，所以可彡成該組裝操作之簡化。 明之—個或多個示範性具體例，可以使該支撐 基板與該半透明構件彼此陽極接合。因此， 密=容納有該光接收元件之空間而不使用黏著二式 '"發明之-個或多個示範性具體例，當使該支撐基 97107611 13 200901432 板成形為像-平板時，該 接收元件之凹部。並s…一構件有-用以容納該光 板時，該支樓灵板且右半透明構件成形為像—平 因此，可以在;=有一用以容納該光接收元件之凹部。 依據本發明之-個或多個示範性具===凹部。 以具有，所製成之基板本趙，以及體:半板可 料招太本體係由石夕所構成，所以可在 &置該光接收70件，以及因此，可改盖由哕 :數個光接收元件所❹i之光的照度之可靠性。此；： 合射透明構件係由玻璃所製成，所以可確實達成陽極接 :據本發明，可以窄對㈣輯準複數個光接收元件。 口此，可偵測光之照度的詳細分佈。 依據本發明，可_從外部所照射之光的照度之詳細分 佈。 從下面敘述、圖式及申請專利範圍將明顯易知立它能樣 及優點。 八… 【實施方式】 以下將參考圖式以描述本發明之示範性具體例。 [第一具體例] 一圖4係依據第一具體例之使用一照度偵測裝置的一曝 2裝置之示意圖。在圖4中，藉由一在一平台u上所固 定之照度偵測裝置12偵測從一曝光裝置1〇所照射之光的 97107611 200901432 照度。並且，在圖4中，A表示光之掃描方向，以及B表 示該曝光裝置1 〇 —次可照射光之區域Γ 區域Β")。 [找“乂下稱為"光照射 首先’參考圖4’以下將描述依據第一具體例之使用該 照度偵測裝置12的曝光裝置1Q。該曝光裝置Μ裝配有 該平台Π、-光源16、- DMD Π、一吸光板18及一投 影透鏡19。 ^ 該平台11係提供用關定-上面形成有—光阻膜之佈 線基板（未顯示）及該照度偵測裝置12。該光源16係傾斜 地配置在該DMD 17之下側。該光源16係提供用以照射光 至該DMD 17。 該DMD 17係配置在該平台11上方，以相對於該照度偵 測裝置12。該DMD 17具有複數個微鏡（未顯示），以接收 自s亥光源16所發射之光。當輸入對應於所要暴露之圖案 的資料（电彳§ 5虎）時’該D M D 17傾斜該等微鏡來回鹿該資 ()料’以反射自該光源16所發射之光至被固定至該平台11 之照度偵測裝置12(當在該平台11上固定上面形成有該 光阻膜之佈線基板（未顯示）時，反射該光至該光阻膜）。 3亥吸光板18係傾斜地配置在該DMD 17之下侧。該吸光 板18係提供用以吸收針對曝光所不需要之反射光。該投 影透鏡19係配置在該DMD 17與該照度偵測裝置12之間。 該投影透鏡19係配置用以調整被反射至該DMD 17之光的 行進方向及光照射區域Β。 圖5係依據本發明之第一具體例的照度偵測裝置之剖 97107611 15 200901432 面圖在圖5中’相同元件符號係依附在相同於圖4所示 之結構的構成部分。 參考圖5，第一具體例之照度偵測裝置丨2具有一對準 板13及複數個照度债測零件14。該對準板13具有一薄 板22及複數個佈線圖案23及24。該薄板22係、一上面提 供有複數個照度_零件14之支撐板。#從上面麟 時’該薄板22實質上等於該曝光裝置1()所要曝光之一佈 (200901432 IX. INSTRUCTIONS: This application is based on and claims the patent application No. 2007-054706 dated March 5, 2007 and the patent application No. 2007 issued on May π, 2007. Priority of 12649 nickname. The entire contents of these Japanese patent applications are hereby incorporated by reference. [Technical Field] The present disclosure relates to an illumination detecting component and an illumination detecting device, and more particularly to an illumination detecting component and a method for detecting an external illumination Illumination detection of light illumination. [Prior Art] In the related art, when manufacturing a wiring substrate such as a printed substrate, as shown in FIG. 1, an exposure device having a digital micromirror device (DMD) 106 is used to make a photoresist film. Or a film photoresist exposure. Fig. 1 is a view showing an exposure apparatus used in the manufacture of a wiring substrate. And 'in Fig. 1, the exposure device 丨00 will be exposed each time in a region {j (hereinafter referred to as "light irradiation region J") and K denotes the scanning direction of light (hereinafter referred to as "kappa direction" Referring to FIG. 1 'the exposure apparatus 100 includes a platform 101, a light source 〇5, a digital micromirror device (DMD) 1 () 6, a light absorbing plate 107, and a projection lens 108. The platform 101 is provided. For fixing a wiring substrate 102, a photoresist film 1?3 is formed on the wiring substrate 102. The light source 105 is obliquely disposed on the lower side of the DMD 106. The light source 105 is provided to illuminate light to the DMD. 106. 97107611 200901432 § Hai DMD 10 6 system length: for the top of the platform 1 〇 1 to face the wiring substrate 102. The DMD 106 has a plurality of micromirrors to receive the light emitted from the light source 〇5. When inputting data (electrical signals) corresponding to the pattern to be exposed, the DMD 106 tilts the micromirrors to respond to the data, thereby reflecting the light emitted from the light source 105 to the photoresist film 1〇3 and exposing the light. Photoresist. Film 103. • The light absorbing plate 107 is disposed obliquely on the DMD1. The lower side of the 〇 6. The light absorbing plate 1 〇 7 is provided to absorb the reflected light which is not required for the exposure. The projection lens 丨 08 is disposed between the (10) D 106 and the wiring substrate 1 〇 2 . The projection lens 108 is provided for adjusting the light traveling direction, the light irradiation region j, etc. When the exposure process of the photoresist film 1〇3 is performed using the above-described exposure device 1,, it is important to develop When the photoresist film 103 is patterned into a desired shape after the process, the illuminance distribution of the light on the plane of the wiring substrate 丨〇 2 is recognized. One illuminance detecting device 112 shown in FIG. 2 is used in the related art. ◎ illuminance detecting device for detecting the illuminance of light on the plane of the wiring substrate 1 。 2. Fig. 2 is a diagram showing one illuminance detecting device in the related art, and Fig. 3 is a view of Fig. 2 An enlarged cross-sectional view of the illuminance detecting device. The illuminance of the light irradiated by the illuminance detecting device 112 from the exposure device 1 纲 is schematically described in FIG. 2 and will be omitted from FIG. 2 . 3 shows the description of the wiring patterns 116 and 117. In Fig. 3, when When a plurality of illuminance detecting units 114 are arranged at intervals, Pa denotes an alignment pitch of the photodiodes 122 (hereinafter referred to as π-alignment pitch pA). 97107611 7 200901432 Referring to FIG. 2, an illuminance detecting device in the related art The 丨丨 2 includes an alignment plate 113 and a plurality of illuminance detecting units 丨丨 4. Referring to Figures 2 and 3, the alignment plate 113 is provided with a plurality of illuminance detecting units 114 for aligning and having a thin plate. 115 and the wiring patterns 116 and 117. The wiring patterns 116 and 117 are formed on the upper surface 115A of the thin plate •5. The wiring patterns 116 and 117 are electrically connected to the illuminance detecting unit 114. The wiring pattern processes 6 and 6 are for guiding the wiring of the detection signals detected by the illumination detecting unit 114 and also supplying electric power to the illumination detecting units 114. Each illumination detection unit of the illumination detection unit 114 includes a ceramic substrate 121, the photodiode 122, a ceramic frame 124, a glass substrate 126, and leads 128 and 129. The plurality of illuminance detecting units 114 are disposed on the alignment plate 113 to dispose the photodiodes 122 at an alignment pitch Pa. The ceramic substrate 121 has a ceramic substrate body ΐ3ι and 塾133 and 134. The pads 133 and 134 are provided on the upper surface 13u of the ceramic substrate body 131. The photodiode 122 is provided on the 134 pad. The photodiode 122 has a positive electrode 136 and a light receiving portion 138 on the upper surface side, and has a negative electrode 137 on its lower surface side. The positive electrode 136 is electrically connected to the pad 33 via an address metal line 125. The light receiving portion i is configured to receive light reflected from the DMD 1〇6 and then passed through the projection lens. The negative electrode 137 is disposed on the pad 134 and electrically connected to the pad 134. The ceramic frame 124 has a through hole 97107611 8 200901432 124A for accommodating the photodiode 122. The ceramic frame 124 is disposed on the pads 133 and i34 and the upper surface 1314 of the ceramic substrate body 131 so as to surround the light 122. By forming a second green sheet having the through hole 124A formed therein (the green strip is formed after sintering to form the ceramic frame 124), an electric conductor as the pads 133 and 134 is formed thereon. The first green belt (this green V constitutes the ceramic substrate 121 after sintering) forms the ceramic substrate 121 and the ceramic frame 124, and then, they are sintered. The glass substrate 126 is formed as a thin plate and is provided on the ceramic frame 124. The glass substrate 126 is provided to pass light irradiated from the exposure device and is also tightly sealed. The space L of the photodiode 122 is received. The lead 128 is connected to a portion of the pad 133 located outside the ceramic frame 124. The lead 128 is an external connection end of the illumination detecting unit 114 and is electrically connected via a dice 141. Connected to the wiring pattern 116. Therefore, the cloth (the line pattern 116 is electrically connected to the positive electrode 136 of the photodiode 122. The lead 129 is connected to a portion of the pad 134 that is outside the ceramic frame 124. The lead 129 The external connection end of the illumination detecting unit 114 is electrically connected to the wiring pattern 117 via a solder 142. Therefore, the wiring pattern 117 is electrically connected to the negative electrode 137 of the photodiode 122 (see, for example, Japanese Patent Application) Announcement No. 2-727279). However, according to the illuminance detecting device 112 in the related art, the plurality of illuminance detecting units 114 respectively provided with a photodiode 122 are disposed on the alignment plate 113, and because It is difficult to narrow the alignment pitch pA of the photodiode 122 97107611 9 200901432 from the exposure apparatus. As a result, there is a problem that the detailed distribution of the illuminance of the light irradiated by the illumination cannot be detected. One or more exemplary specific example parts and illumination illuminating devices of the present invention are capable of measuring the detailed distribution of illuminance of light. π...Zero Field Zero One or more exemplary embodiments of the invention, an illuminance Detecting a supporting substrate, comprising: a substrate body made of germanium; and a pad provided on an upper surface of the substrate body; a plurality of light receiving components electrically connected to the germanium and receiving from the outside = The plurality of light-receiving elements are arranged in an array on the upper surface side; the external connection end is electrically connected to the light-receiving elements; and a half-transparent member is provided on the substrate body, ... Forming a sealed space between the translucent member and the substrate body to accommodate the plurality of light receiving elements. According to the exemplary embodiments, the plurality of light receiving elements are The column mode is disposed on the substrate, and thus the alignment pitch of the light receiving elements can be narrowed. Therefore, the detailed distribution of the illumination of the light irradiated from the outside can be detected.矽 constituting, and thus, the substrate is in a state of stagnation. After that, the plurality of light receiving elements 9710711 10 200901432 are accurately disposed at a desired position of the support substrate, and thus, can be improved by the plurality of light receiving The illuminance of the element is measured. In addition, the translucent member has a recess for accommodating a plurality of light-receiving elements, and is provided on the substrate body, the space formed by the recess. Therefore, it can prevent the heart...": What is the type? j Prevents the space where the plurality of light receiving the 7L pieces is contaminated by the outside air. • According to the m specific embodiment of the present invention, the pads are composed of a mineral film. Therefore, the size of the crucibles can be made smaller than the case where the mats are formed by the green belts on which the conductors are formed (the substrate is made by the company). Therefore, the alignment pitch of the plurality of light receiving elements can be further narrowed. < In accordance with one or more exemplary embodiments of the present invention, each of the plurality of light receiving elements - the light receiving (four) may have - a light receiving portion for receiving the light and may be in the translucent member Providing a light shielding member for shielding the light with respect to the first surface of the light receiving member, and providing a light for passing the portion of the shielding member opposite to the "light receiving portion" Therefore, the plurality of light receiving elements only separately measure the illuminance of the light irradiated by the alignment position of each of the light receiving members of the light receiving elements. As a result, the illuminance of the light in a narrow range can be measured. According to one or more exemplary embodiments of the present invention, the diameter of each opening of the openings may be smaller than the diameter of each effective area of the light receiving portions. Therefore, in addition to the effective area, The light is not irradiated to the first receiving portion. As a result, the reliability of the illumination of the light detected by the plurality of light receiving elements 97107111 11 200901432 can be improved. According to one or more exemplary embodiments of the present invention, the half The transparent member may be made of glass, and the substrate body and the translucent member may be anodically bonded to each other. Therefore, the space in which the plurality of light receiving elements are accommodated may be hermetically sealed. According to one or more examples of the present invention For example, the support substrate may further include a through via, the through vias are provided to pass through the substrate body and electrically connected to the pads, and the through vias are located at = for the substrate body The end on the lower surface of the upper surface may be electrically connected to the external connection terminals. Therefore, the size of the illumination detection component may be achieved differently from the conventional illumination detection component using the leads as the external connection terminals. According to one or more exemplary embodiments of the present invention, a reflective coating may be formed on the second surface of the translucent member relative to the first surface to prevent reflection on the second surface. The case of light. Therefore, (the actual illuminance corresponding to the illumination light can be detected. According to one or more exemplary embodiments of the present invention, The device includes: 'again' a plurality of illumination detecting components; and an alignment plate comprising: a thin plate having an outer shape substantially equal to a wiring substrate exposed by a device; and a wire pattern provided on the thin plate And electrically connected to the external connection end provided in the measuring parts. The invention relates to one or more exemplary embodiments of the present invention. An illumination detecting component comprises: a supporting substrate; a light receiving component, a plurality of light receiving portions disposed on the support substrate and having light for receiving illumination from the outside; a translucent member bonded to the support substrate to form a space between the translucent member and the branch substrate Sealing the light receiving member in a sealed manner, the material transparent member is formed by a material for transmitting the light, and the external connecting end is electrically connected to the light receiving element, wherein the plurality of light receiving portions are The light receiving element is formed in an array. According to the exemplary embodiments, the plurality of light receiving portions are formed in an array on the light receiving elements disposed on the substrate, and thus the 'alignment pitch of the receiving elements can be changed step by step. narrow. Therefore, the detailed distribution of the illuminance (4) illuminated from the outside is detected. Further, a plurality of 70 is mounted on the support substrate without alignment in :=ΓΓ. Therefore, since the single light receiving member is mounted on the supporting substrate, the simplification of the assembling operation can be achieved. In one or more exemplary embodiments, the support substrate and the translucent member may be anodically bonded to each other. Therefore, the density = the space in which the light-receiving element is accommodated without using the adhesive-type '" one or more exemplary embodiments of the invention, when the support substrate 9710711 13 200901432 is formed into an image-plate, The recess of the receiving element. And s... a member has - for accommodating the light panel, the slab and the right translucent member are shaped like - flat, and may have a recess for accommodating the light receiving member. One or more exemplary tools in accordance with the present invention have a === recess. In order to have the substrate made by Zhao, and the body: the half board can be made up of Shi Xi, so that 70 pieces can be received in the light, and therefore, the cover can be changed by 哕: The reliability of the illuminance of the light of the light receiving element. This: The fused transparent member is made of glass, so that the anode connection can be surely achieved: According to the present invention, a plurality of light receiving elements can be aligned narrowly (4). In this case, the detailed distribution of the illumination of the light can be detected. According to the present invention, the detailed distribution of the illuminance of the light irradiated from the outside can be made. It will be apparent from the following description, drawings and claims that the scope and advantages of the invention. [Embodiment] Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings. [First Specific Example] Fig. 4 is a view showing an exposure apparatus using an illumination detecting apparatus according to the first specific example. In Fig. 4, the illuminance detecting device 12 fixed on a platform u detects the illumination of 97107611 200901432 from the light irradiated by an exposure device 1. Further, in Fig. 4, A indicates the scanning direction of light, and B indicates the area Β region Β ") of the exposure device 1 in which the light can be irradiated. [Finding "Under the nickname" "Light illuminating first" Referring to Fig. 4', an exposure apparatus 1Q using the illuminance detecting device 12 according to the first specific example will be described. The exposure apparatus Μ is equipped with the platform Π, - light source 16. DMD Π, a light absorbing plate 18 and a projection lens 19. ^ The platform 11 is provided with a wiring substrate (not shown) on which the photoresist film is formed - and the illuminance detecting device 12. The 16 series is obliquely disposed on the lower side of the DMD 17. The light source 16 is provided to illuminate light to the DMD 17. The DMD 17 is disposed above the platform 11 to detect the device 12 relative to the illumination. The DMD 17 Having a plurality of micromirrors (not shown) for receiving light emitted from the s-light source 16. When inputting data corresponding to the pattern to be exposed (Electric 彳 5 Tiger), the DMD 17 tilts the micromirrors back and forth The deer (the material) is configured to reflect the light emitted from the light source 16 to the illuminance detecting device 12 fixed to the stage 11 (when the wiring substrate on which the photoresist film is formed is fixed on the stage 11 (not When displayed), the light is reflected to the photoresist film.) 3H light absorption plate 18 The light absorbing panel 18 is provided to absorb reflected light that is not required for exposure. The projection lens 19 is disposed between the DMD 17 and the illuminance detecting device 12. The projection lens 19 is configured to adjust the traveling direction of the light reflected to the DMD 17 and the light irradiation area Β. FIG. 5 is a cross-sectional view of the illuminance detecting device according to the first specific example of the present invention. 97170411 15 200901432 5 'the same component symbol is attached to the same component as the structure shown in Fig. 4. Referring to Fig. 5, the illumination detecting device 2 of the first specific example has an alignment plate 13 and a plurality of illumination debt measuring components 14 The alignment plate 13 has a thin plate 22 and a plurality of wiring patterns 23 and 24. The thin plate 22 is a support plate on which a plurality of illuminance_parts 14 are provided. #From the top of the lining, the thin plate 22 is substantially equal to The exposure device 1() is to expose one of the cloths (
L 線基板(未顯示)的外部形狀。當該曝光裝置10所曝光之 :線基板（未顯示）的尺寸為5Qcmx8Gcm時，該薄板22之 見度Π可以设定為例如5〇cm。在此情況中，該薄板μ 之寬度W2可以設定為例如8〇cm。 在〇薄板22之上表面22A上提供該複數個佈線圖案23 及24。該佈線圖案23連接至一外部連接端28，以及該外 部連接端28電性連接至—稍後所述之光接收元件打之一 電極61。該佈線圖案24連接至一外部連接端29，苴中 該外部連接端29電性連接至該_所述之錢收元件、2? :-負—電極62。該複數個佈線圖案㈡及以供應電力至 75複數個、度偵測零件1 4所提供之複數個光接收 元件 ^以及當照射光至料光純元件27肖，將該等光接 收π件27所偵測之偵測信號導引至外邱。 ，複數㈣㈣測零件14係以—敎間隔配置在該對 2 13上。該等照度仙零件14之每—照度制零件具 ^ —支撐基板26、該複數個光接收元件27及、該等外部 連接端28及29、一半透明構件32及一抗反射塗層33(以 97107611 16 200901432 下稱為AR塗層33)。 該支撐基板26係一上面安裝有該複數個光接收元件27 之基板，以及具有一基板本體36、一絕緣膜37、貫穿介 層38及39、墊42及43、外部連接墊45及46、一防焊 層48、一鎳層51及一金層52。 圖6係一上面配置有複數個光接收元件27之支撐基板 的平面圖。在圖6中，相同元件符號係依附至相同於圖5 所示之照度偵測零件14的構成部分。 參考圖5及6，該基板本體36在從上面觀看時係形成 像一方形板’以及具有複數個通孔56及57。該通孔56 係形成用以提供該貫穿介層38，以及該通孔57係形成用 以提供該貫穿介層39。該基板本體36係由矽所製成。具 體上，可使用一矽基板做為該基板本體36 ◊該基板本體 36之厚度Ml可以設定為例如2〇〇μιη至5〇〇gm。 在此方式中，因為該基板本體36係由矽所製成，所以 〇 (不同於該陶餘）可在該基板本冑36 +抑制龜曲。因 此，可以高準確性在該支撐基板26之期望位置中配置該 複數個光接收元彳27。結果，可改善由該複數個光接^ 兀件27所偵測之光的照度之可靠性。 在該基板本體36之上表面36A及下表面36β上以及該 基板本體36之對應於該等通孔56及57的部分之表面^ 提供該絕緣膜37。該絕緣膜37係一使該等貫穿介層⑽ 及39、該等塾42及43及該等外部連接墊45及46與該 基板本體36絕緣之薄臈。例如，可使用—氧化膜做為該 97107611 17 200901432 絕，膜37。备使用該氧化膜做為該絕緣膜日夺，例如可 以猎由熱氧化在内部形成有該等通孔56及57之基板本體 3 6以形成該氧化臈。 在^面形成有該絕緣膜37之通孔56中提供該貫穿介層 °亥貫穿介層38之上端部連接至該墊42，以及該貫穿 乂 38之下端部連接至該外部連接，45。該貫穿介層38 係提t、用以電性連接該墊及該外部連接墊45。 在面形成有該絕緣膜37之通孔57中提供該貫穿介層 39。，亥貝穿介層39之上端部連接至該墊，以及該貫穿 介1 39之下端部連接至該外部連接墊46。該貫穿介層⑽ 係提供用以電性連接該墊43及該外部連接墊46。例如， 可以使用銅做為該等貫穿介層38及39之材料。並且，可 以藉由電鍍方法形成該等貫穿介層38及39。 該墊42係提供用以從該貫穿介層38之上端部延伸於該 絕緣膜37之對應於該貫穿介層⑽之上端部所形成之位置 的分上方。該墊42係連接至該貫穿介層38。並且，該 墊42經由一金屬線54電性連接至該光接收元件27之正 電極61。 該墊43係提供用以從該貫穿介層39之上端部延伸於該 絕緣膜37之對應於該貫穿介層39之上端部所形成之位置 的部分上方。當從上面觀看該支撐基板26時，以陣列方 式配置該複數個墊43。該墊43連接至該貫穿介層39，以 及電性連接至該光接收元件27之負電極62。例如，可以 使用銅做為該等塾42及43之材料。並且，可以藉由該電 97107611 18 200901432 可以使用半加成法、 鍍方法形成該等墊42及43。例如 減成法專做為該電鍵方法。 在此方式中，藉由該電鍍方法形成連接該光接 27^塾42及43。因此，相較於在該綠帶上形成做為該塾 之導電體及然後藉由燒結上面形成有該導電體之 形成該墊之情況’可改善該等塾42 & 43之尺寸準確性； 於是，可藉由減少該等墊42及43之尺寸以使在該支严 基板26上所配置之光接收元件27的對準間距變小。= :，可侧從該曝光裝置10所照射之光的照度之詳細分 該外部連接墊45係提供用以從該貫穿介層心 延伸於該絕、賴37之對應於該貫穿介層38之下端部所： =位置的部分上方。該外部連接墊45連接至該貫穿介 二=卜部連接墊45經由該金屬線54、該塾42及該 貝^層38電性連接至該光接收元件27之正電㈣卜 »亥外4連接墊46係提供用以從該貫穿介 =伸於該絕緣膜37之對應於該貫穿介層39之下= =位置的部分上方。該外部連接墊46連接至該貫穿： : 料部連接墊46經由該墊43及該貫 :連:至該光接收元件27之負電極62。例如，二電 銅做為該等外部連接塾45及46之材料。 使用 =亥基板本體36之下表面側上所形成之絕緣 ::::^上提供該防輝層48。該防焊層48之除了對 應於該錄層5Κ如稍後所述）所形成之區域的部分之夕^ 97107611 19 200901432 並且’該防焊 及46之對應 部分係配置成用以覆蓋該外部連接墊45。 層48具有用以分別暴露該等外部連接塾45 於該錄層51所形成之區域的部分之開口 48a及48Β。 分別在該等外部連接墊45及46之從該等開口 “A及 48B所暴露之部分上提供該鎳層51。該鎳層51係提供用 以防止在該等外部連接墊45及46中所包含之銅擴散至在 該鎳層51之下表面上所提供之金層52及外部連接端28 及29。該鎳層51之厚度可以設定為例如3μπ^ 在該鎳層51之下表面上提供該金層52。該金層52係 提供用以改善對該等外部連接端28及29之黏著。該金層 5 2之厚度可以設定為例如1叫。 该複數個光接收元件27係用以偵測從該曝光裝置〗〇所 照射之光的照度之元件，以及係提供於在該基板本體36 上所形成之複數個墊43上。當從上面觀看該基板本體36 時’以陣列方式配置該複數個光接收元件27。 ( 在此方式中，在一基板本體36上配置該複數個光接收 疋件27，藉以相較於只具有一光二極體122之照度偵測 零件114(見圖3)可使該等光接收元件27之對準間距ρι 變窄。結果，可仔細偵測從該曝光裝置丨〇所照射之光的 照度分佈。在此情況中，該相鄰光接收元件27間之距離 c的最小值可以設定為例如25〇μπι。 该光接收元件27具有該正電極61、該負電極62及一 光接收部63 °該正電極61係提供於該光接收元件27之 上表面側（光接收側）上。該正電極61連接至該金屬線 97107611 200901432 54。該正電極61經由該金屬線54電性連接至該墊42。 該負電極62係提供於該光接收元件27之下表面側上。該 負電極62係固定在該墊43上，以及電性連接至該墊43。 該負電極62可以以例如導電膠固定在該墊43上。 該光接收部63係提供於該光接收元件27之上表面側。 該光接收部63相對於該半透明構件32，以便接收從該曝 光裝置10所照射之光。該光接收部63具有一以高可靠性 ^偵測照度值之有效區域63A。該有效區域63A之直徑以 可以設定為例如φ0. 8mm。例如可以使用該光二極體做為上 述所構成之光接收元件27。 11亥外。卩連接部28係提供於該開口部48A所暴露之金層 52上。該外部連接端28連接至對該對準板13所提供之 佈線圖案23。該外部連接端28係電性連接該光接收元件 27之正電極6丨及該佈線圖案23的端子。 該外部連接部29係提供於顧口部所暴露之金層 2上。料料接端29連接至對該料板η所提供之 布線圖案24。該外部連接端29係電性連接該光接收元件 曰之負電極62及該佈線圖案24的端子。例如，可以使 用焊球做為該等外部連接端28及29。 29tt式中’該照度制零件14之外部連接端28及 續基板26之下表面侧上。因此，相較於 線128及129(見圖3)做為該等外部連接端之 匱形，可達成該照度偵測零件14之尺寸縮小。 該半透明構件32接合至該基板本體36之位於圍繞該基 97107611 21 200901432 板本體36之外周囹沾u t 一田”〜周圍的上表面36A。該半透明構件32且古 用以谷、、内該複數個光接收元件27之凹部6 :有 之深度F(告邏埋兮*、* 該凹部66 “心 +透明構件32之接觸該基板本體％ 的面似做為—參考點時所獲得之深度）可以：板本體36 600μιη。此外，該半透 叹疋為例如 立 構件3 2之對應於該凹部6 6夕 部的部分之厚度M2可以設定為例如5〇_。卩66之底The outer shape of the L-line substrate (not shown). When the size of the wire substrate (not shown) exposed by the exposure device 10 is 5 Qcm x 8 Gcm, the visibility Π of the thin plate 22 can be set to, for example, 5 〇 cm. In this case, the width W2 of the thin plate μ can be set to, for example, 8 〇cm. The plurality of wiring patterns 23 and 24 are provided on the upper surface 22A of the tantalum sheet 22. The wiring pattern 23 is connected to an external connection terminal 28, and the external connection terminal 28 is electrically connected to an electrode 61 which is a light-receiving element to be described later. The wiring pattern 24 is connected to an external connection terminal 29, and the external connection terminal 29 is electrically connected to the money receiving member, 2?:-negative electrode 62. The plurality of wiring patterns (2) and the plurality of light-receiving elements provided by the plurality of power-detecting parts 14 and the light-receiving light-to-light elements 27 are received by the light-receiving element 27 The detected detection signal is directed to the outer Qiu. The plural (four) (four) measuring parts 14 are arranged on the pair 2 13 at intervals of -. Each of the illumination illuminating parts 14 - the illuminating part has a support substrate 26, the plurality of light receiving elements 27 and the external connecting ends 28 and 29, the half transparent member 32 and an anti-reflective coating 33 ( 97107611 16 200901432 hereinafter referred to as AR coating 33). The support substrate 26 is a substrate on which the plurality of light receiving elements 27 are mounted, and has a substrate body 36, an insulating film 37, through layers 38 and 39, pads 42 and 43, external connection pads 45 and 46, A solder mask layer 48, a nickel layer 51 and a gold layer 52. Fig. 6 is a plan view showing a supporting substrate on which a plurality of light receiving elements 27 are disposed. In Fig. 6, the same component symbols are attached to the components of the illumination detecting component 14 which are the same as those shown in Fig. 5. Referring to Figures 5 and 6, the substrate body 36 is formed like a square plate as viewed from above and has a plurality of through holes 56 and 57. The through hole 56 is formed to provide the through via 38, and the via 57 is formed to provide the through via 39. The substrate body 36 is made of tantalum. Specifically, a substrate may be used as the substrate body 36. The thickness M1 of the substrate body 36 may be set to, for example, 2 〇〇 μηη to 5 〇〇 gm. In this manner, since the substrate body 36 is made of tantalum, 〇 (different from the ceramic) can suppress the tortoise on the substrate. Therefore, the plurality of light receiving elements 27 can be disposed in a desired position of the support substrate 26 with high accuracy. As a result, the reliability of the illuminance of the light detected by the plurality of optical connectors 27 can be improved. The insulating film 37 is provided on the upper surface 36A and the lower surface 36β of the substrate body 36 and on the surface of the portion of the substrate body 36 corresponding to the through holes 56 and 57. The insulating film 37 is a thin layer that insulates the through vias (10) and 39, the pads 42 and 43 and the external connection pads 45 and 46 from the substrate body 36. For example, an oxide film can be used as the 97107611 17 200901432, film 37. The oxide film is used as the insulating film. For example, the substrate body 36 in which the through holes 56 and 57 are formed by thermal oxidation can be used to form the ruthenium oxide. The through hole of the insulating film 37 is provided in the through hole 56, and the upper end of the through layer 38 is connected to the pad 42, and the lower end of the through hole 38 is connected to the external connection 45. The through via 38 is used to electrically connect the pad and the external connection pad 45. The through via 39 is provided in a via 57 in which the insulating film 37 is formed. The upper end of the Hibb passage layer 39 is connected to the pad, and the lower end of the through hole 1 39 is connected to the external connection pad 46. The through via (10) is provided to electrically connect the pad 43 and the external connection pad 46. For example, copper can be used as the material for the through layers 38 and 39. Further, the through vias 38 and 39 can be formed by an electroplating method. The pad 42 is provided to extend from an upper end portion of the through via 38 over a portion of the insulating film 37 corresponding to a position formed by an upper end portion of the through via (10). The pad 42 is attached to the through via 38. Further, the pad 42 is electrically connected to the positive electrode 61 of the light receiving element 27 via a metal wire 54. The pad 43 is provided to extend from an upper end portion of the through via 39 over a portion of the insulating film 37 corresponding to a position where the upper end portion of the through via 39 is formed. When the support substrate 26 is viewed from above, the plurality of pads 43 are arranged in an array. The pad 43 is connected to the through via 39 and electrically connected to the negative electrode 62 of the light receiving element 27. For example, copper can be used as the material for the crucibles 42 and 43. Further, the pads 42 and 43 can be formed by a semi-additive method or a plating method by the electric circuit 97107611 18 200901432. For example, the subtraction method is used as the key method. In this manner, the photo connections 27 and 43 are formed by the plating method. Therefore, the dimensional accuracy of the 塾42 & 43 can be improved as compared with the case where the electric conductor as the crucible is formed on the green belt and then the spacer is formed by sintering the electric conductor formed thereon; Thus, the alignment pitch of the light receiving elements 27 disposed on the support substrate 26 can be made small by reducing the size of the pads 42 and 43. = :, the illuminance of the light irradiated from the exposure device 10 can be laterally divided. The external connection pad 45 is provided to extend from the through-layer core to the through-layer 38. The lower end is: = above the position of the position. The external connection pad 45 is connected to the through-via 2 pad connection pad 45 via the metal wire 54, the wire 42 and the layer 38 electrically connected to the light-receiving element 27 (4) The pad 46 is provided to extend from the through-substance to a portion of the insulating film 37 corresponding to the position below the through-via layer 39. The external connection pad 46 is connected to the through: the material connection pad 46 via the pad 43 and the negative electrode 62 of the light receiving element 27. For example, two coppers are used as the material for the external ports 45 and 46. The anti-fog layer 48 is provided on the insulation formed on the lower surface side of the substrate body 36. The portion of the solder resist layer 48 that corresponds to the portion of the region formed by the recording layer 5 (described later) and the corresponding portions of the solder resist and 46 are configured to cover the external connection. Pad 45. The layer 48 has openings 48a and 48a for respectively exposing portions of the outer connecting ports 45 to the regions formed by the recording layer 51. The nickel layer 51 is provided on portions of the external connection pads 45 and 46 that are exposed from the openings "A and 48B. The nickel layer 51 is provided to prevent being in the external connection pads 45 and 46. The contained copper diffuses to the gold layer 52 and the external connection terminals 28 and 29 provided on the lower surface of the nickel layer 51. The thickness of the nickel layer 51 can be set to, for example, 3 μπ^ provided on the lower surface of the nickel layer 51. The gold layer 52 is provided to improve adhesion of the external connection ends 28 and 29. The thickness of the gold layer 52 can be set, for example, to 1. The plurality of light receiving elements 27 are used to An element for detecting the illuminance of the light irradiated from the exposure device is provided on a plurality of pads 43 formed on the substrate body 36. When viewed from above, the substrate body 36 is configured in an array The plurality of light receiving elements 27. (In this manner, the plurality of light receiving elements 27 are disposed on a substrate body 36, thereby comparing the illumination detecting parts 114 with only one photodiode 122 (see FIG. 3) The alignment pitch ρι of the light receiving elements 27 can be narrowed. The illuminance distribution of the light irradiated from the exposure device 丨〇 can be carefully detected. In this case, the minimum value of the distance c between the adjacent light receiving elements 27 can be set to, for example, 25 〇 μπι. The positive electrode 61, the negative electrode 62, and a light receiving portion 63 are provided on the upper surface side (light receiving side) of the light receiving element 27. The positive electrode 61 is connected to the metal wire 97107716 200901432 54. The positive electrode 61 is electrically connected to the pad 42 via the metal wire 54. The negative electrode 62 is provided on the lower surface side of the light receiving element 27. The negative electrode 62 is fixed on the pad 43. And electrically connected to the pad 43. The negative electrode 62 may be fixed to the pad 43 with, for example, a conductive paste. The light receiving portion 63 is provided on the upper surface side of the light receiving element 27. The light receiving portion 63 is opposite to the light receiving portion 63. The translucent member 32 receives light irradiated from the exposure device 10. The light receiving portion 63 has an effective area 63A for detecting the illuminance value with high reliability. The diameter of the effective portion 63A can be set to, for example, Φ0. 8mm. For example, it can be used The photodiode is used as the light receiving element 27 constructed as described above. The outer connecting portion 28 is provided on the gold layer 52 exposed by the opening portion 48A. The external connecting end 28 is connected to the alignment plate. 13 is provided with a wiring pattern 23. The external connection end 28 is electrically connected to the positive electrode 6A of the light receiving element 27 and the terminal of the wiring pattern 23. The external connection portion 29 is provided for the gold exposed by the mouth portion. On the layer 2, the material connection end 29 is connected to the wiring pattern 24 provided by the material plate n. The external connection end 29 is electrically connected to the negative electrode 62 of the light receiving element 及 and the terminal of the wiring pattern 24. For example, solder balls can be used as the external connections 28 and 29. In the 29tt type, the external connection end 28 of the illuminance part 14 and the lower surface side of the continuation substrate 26 are formed. Therefore, the size reduction of the illuminance detecting member 14 can be achieved as compared with the lines 128 and 129 (see Fig. 3) as the ridges of the external connecting ends. The translucent member 32 is bonded to the upper surface 36A of the substrate body 36 which is located around the base of the board body 36. The translucent member 32 is used for the valley and the inner surface. The concave portion 6 of the plurality of light receiving elements 27 has a depth F (successively buried *, * the concave portion 66 "the surface of the core + transparent member 32 contacting the substrate body % is regarded as a reference point" The depth can be: the plate body 36 600 μm. Further, the semi-transparent ridge is, for example, the thickness M2 of the portion of the upright member 3 2 corresponding to the portion of the recessed portion 66, which may be set to, for example, 5 〇 _.卩66 bottom
Ο ^亥凹# 66在用以容納該複數個光接收S件27之半透 ^冓件32與該支揮基板26間形成—㈣e。該半透^ ^ 32係提供用以密閉地密封該空間e。例如，可以使用 透明構件32之材料。當使用玻璃做為該半 + 2之材料時’可以陽極接合該半透明構件32與 5亥由石夕所製造之基板本體36。 日在此方式中，容納複數個光接收元件27之空間Ε可由 陽極接合該半透明構件32及基板本體36以密閉方式來密 封。因此，可防止該空間Ε受到污染。 該AR塗層33係提供用以覆蓋該半透明構件犯之面 32Β(照射自該曝光裝置1〇所發射之光的面）。該ar塗層 33係提供用以藉由防止在該半透明構件32之面32β上反 射自該曝光裝置10所照射之光的情況以有效地使該曝光 裝置10所照射之光通過該半透明構件32。可以使用 Ta2〇s/Si〇2多層膜做為該ar塗層33，以及藉由依序在該 半透明構件32之面32B上堆疊一 Ta2〇5膜及一 Si〇2膜以形 成該TaAVSiO2多層膜。可以藉由濺鍍法及氣相沉積法形 成該TaWs/SiO2多層膜。該Ta2〇s膜之厚度可以設定為例 97107611 22 200901432 如〇·2Α。此外，該Si〇2膜之厚度可以設定為例如〇 i3 A。 在此方式中，該AR塗層33係提供於該半透明構件32 之面32B上。結果，可偵測相應於從該曝光裝置1〇所實 際照射之光的照度。 依據本具體例之照度偵測零件，因為在一支撐基板26 上以陣列方式配置該複數個光接收元件27，所以可使該 •等光接收元件27之對準間距Pl變窄。因此，可詳細偵^ 從該曝光裝置10所照射之光的照度分佈。並且，因為該 基板本體36係由矽所製成，所以可在該基板本體託中抑 制翹曲。因此，可以高準確性在該支撐基板26之期望位 置中配置該複數個光接收元件27，以及因此，可改善由 該複數個光接收元件27所偵測之光的照度之可靠性。並 且，因為該基板本體36係由矽所製成，所以可以藉由該 電鍍法形成該等墊42及43。因此，可減少該等墊42及 43之尺寸。結果，可藉由進一步使該等光接收元件”之 對準間距P!變窄以高準確性偵測從該曝光裝置丨〇所照射 之光的照度之詳細分佈。 … 並且，依據本具體例之照度偵測裝置，在該複數個照度 偵測零件14中，在該支撐基板26上配置該複數個光接收 元件27。此外，該複數個照度偵測零件14具有由矽所製 成之基板本體36，以及以陣列方式提供於該薄板22上， 其中該薄板22之外部形狀實質上等於該曝光裝置1〇所暴 露之佈線基板。因此，相對於在相關技藝中之照度偵測裝 置112(見圖3)，可使該等光接收元件27之對準間距& 97107611 23 200901432 變窄。結i，可詳細偵測從該曝光裝置1〇戶斤照射之光的 照度分佈。 在本具體例中，雖然已描述偵測從該曝光裝置丨〇所照 射之光的照度之情％ ’但是由該照度债測農£ i 2及該昭 度偵測零件14所伯測之光並非侷限於本具體例。例如了 可以藉由該照度债測裝置12及/或該照度偵測零件14偵 測自紫外線照射設備所照射之光的照度。 [第二具體例] 圖7係依據本發明之第二具體例的一照度偵測裝置之 剖面圖。在圖7中’相同元件符號係依附至相同於第一具 體例中之照度偵測裝置12的構成部分。 八 參考圖7 ’除了提供複數個照度㈣零件？！以取代對 第一具體例之照度偵測裝置12所提供之照度㈣零件Μ :::2二具體例之一照度债測裝置7〇係配置成相似於 该照度偵測裝置12。 除了對第-具體例所述之照度_零件14的結構提供 一光遮蔽構件73之外，該照㈣測零件71係編 於該照度偵測零件14。 1風相似 接半^明構件32之相對於該等光接收元件27的光 接收相之個別部分之外’該光遮 覆蓋該半㈣構件32之㈣於該凹部 :蔽構件73係提供用以切斷從該曝光裝^ 1〇所照：之 光0 圖8係顯#上面觀看時在該光接收it件之—光接收 97107611 24 200901432 部與在一光遮蔽構件中所形成之一開口部間之位置關係 的圖不。在圖8中’相同元件符號係依附至相同於圖7所 示之照度偵測裝置70的構成部分。 參考圖7及圖8 ’該光遮蔽構件73在相對於該等光接 收元件27之光接收部63的部分上具有開口 73A，以暴露 該半透明構件32。該等開口 m係形成用以使從該曝光 裝置10所照射之光通過至該等光接收元件27之光接收部 在此方式中’該光遮蔽構件73在相對於該等光接收元 件27之光接收部分63的部分上具有該等開口 w，以及 係提供用以覆蓋該半透明構件32之相對於該凹㈣的内 表面因此複數個光接收元件27分別只會偵測對每 光接收7G件27之對準位置所照射之光的照度。結果， 可偵測在窄範圍内之光的照度。 並士，該開口部73A之直；R2可以設定成小於該光接 件27之光接收部63的有效區域63Α之直徑R1(見圖 )邱:是’除該有效區域63A之外該光沒有照射至該光接 卩及因此’可改善由該複數個光接收元件27所 偵測之光的照度之可靠柹。典 係設定為㈣二=口; =，63A之直㈣1 例如Φ0.4觀。 該開口獨之直㈣可以設定為 二此：二吏用；石夕臈做為上述所形成之光遮蔽構件 :出’该矽臈之厚度可以設定為例如5A。並 且可以错由例如氣相沉積法形成該矽膜。 97107611 200901432 依據本具體例之照度偵測零件，該光遮蔽構件73在相 對於該等光接收元件27之光接收部63的部分上具有該等 開口 73A，以及係提供用以覆蓋該半透明構件32之相對 於該凹部66的内表面。因此，該複數個光接收元件27分 別只會偵測對每一光接收元件27之對準位置所照射之光 . 的照度。結果，可偵測在一窄範圍内之光的照度。 ' 又’依據本具體例之照度偵測裝置’該複數個照度偵測 零件71之每一照度偵測零件具有該光遮蔽構件73，在該 光遮構件73中形成有該等開口 m。因此，該複數個光 接收元件27只會分別偵測對每一光接收元件”之對準位 置所照射之光的照度。結果，可偵測在一窄範圍内之光的 照度。 在本具體例中，雖然已描述债測從該曝光裳置工〇所照 射之光的照度之情況，但是由該照度偵測裝置7〇及該照 度债測零件71所伯測之光並非褐限於本示範性且體例。 (例如，由該照度偵測裝置7〇及/或該照度偵測零件Η可 以债測用以硬化- UV樹脂之從紫外線照射設備所照射之 光的照度。 [第三具體例] 圖9至11係描述依據本發明之第三具體例的一照度偵 測裝置之圖式。圖9係依據本發明之第三具體例的一=度 伯測裝置80之剖面圖，圖1〇係該照度铺測裝置8〇之側 視圖（-半透明構件32之—部分係顯示成為—剖面圖）， 以及圖11係4支撐基板26之平面圖（顯示移除該半透明 97107611 26 200901432 構件32之情況）。在圖9至U中，相同元件符號係依附 至對應於依據圖4至8所示之第一及第二具體例的照度偵 測裝置12及70的結構，以及在此將省略它們的敘述。 依據第一及第二具體例之照度偵測裝置12及該照度偵 測裝置70’每-光接收元件27具有一光接收表面（光接 收部）63及該複數個光接收元件27係以陣列方式配置在 該支撐基板26上。於是，相較於在相關技藝中之照度谓 測裝置，可達成該等照度偵測裝置12及7〇之尺寸縮小: 同時，依據本具體例之照度偵測裝置8〇的特徵在於·· 使用一光二極體晶片82做為在該支撐基板26上所安裝之 光接收元件以構成-照度偵測零件81，在該光二極體晶 片82中以陣列方式在—相縣板85(晶片）上形成複數個 光接收部63。 如圖11所以陣列方式（更特別是像垂直6χ水平6 ^晶格）在該光二極體晶片82上配置該複數個光接收部 /刀63。個別光接收部分63之正電極6!藉由在該基板85 之正面上所形成之引出佈線83被引導至外周圍部分，以 及連接至在外部周圍上所形成之塾42。並且’個別光接 收部63之負電極連接至在竽 们另J光接 電極圖案86。接至在該基板85之背面上所形成之負 形成：Π中’如圖9及10所示’該負電極圖案86係 :—肖基板85之下表面的總區域上所形成之固 ::月82 ’：負電極圖案86電性連接至依據該光二極 脰曰曰片82之對準位置在該基板本體36之上表面36A上所 97107611 27 200901432 形成之墊44。該等墊44經由該等貫穿介層39連接至該 等外部連接端29。於是，料二極體晶片82之免電極電 性連接至該等外部連接端2 9。 在本具體例中，雖然以面積實質上等於該光二極體晶片 82之面積形成該負電極圖案86及該墊〇，但是它們經 並非侷限於本示範性具體例。可以部分形成該負 86及該墊44。 同時’在該基板85之周圍所形成之正電極61藉由使用 該金屬線54連接至該基板本體36上所形成之塾42。個 別塾42經由該等貫穿介層38連接至該等外部連接端2心 因此’該光二極體晶片82之正電極61電性連接至該等外 部連接端28。依據此結構，#從背面觀看該支#基板μ 時，該等外部連接端29係配置在内側及該等外部連接端 28係配置在它們的外側。 、並且’在本具體例中，該半透明構件32係由玻璃所製 成’以及當該面32A陽極接合至該由石夕所製成之面似之 基板本體36的上表面36A時，該半透明構件32 基板26係整體構成。並且，在該半透明構件32之相對於 該光二極體晶片82的位置中形成該光遮蔽構件73。又， 在該光遮蔽構件73之相對於該等光接收部分⑽的位置中 形成該開π部73A’該開口部73八具有—比該光接 3 之有效區域63A窄之區域。 在依據本具體例之上述所構成的照度偵測零# Μ中， 使用該光二極體晶4 82，其中以陣列方式在相同基板 97107611 28 200901432 S5(晶片）上形成做為該 63。因此，可進一步 70 件之複數個光接收部 ⑼圖9及圖U二該等相鄰光接收部63之對準間距 及第二具體例中，因H所示）變窄。換句話說，在第一 提供該金屬線54,所以在：：該等相鄰光接收元件27間 置該金屬線54之空間。基板本體36中需要一用以配 同時，在本具體例中所使用之光二極體 需要提供用以在該基板85上形成該金屬 : =提供該引出佈線83成為較細圖案佈線。結果’，； ==上縮短該等相鄰先接收部分63之對準間距 P2,以及因此’可以較高準確性偵測該照度之分佈。 亚且’在第一及第二具體例中，在該基板本體36上安 裝該等光接收元件27中，需要分別放置及然後安裝該複 數個光接收元# 27。在本具體例中，可以在該基板本體 36上放置及然後安裝一個光二極體晶片82。因此，可藉 由使用本具體例之結構達成該組裝操作之簡化。 [第四具體例] 圖12係描述依據本發明之第四具體例的一照度偵測裝 置之圖式。圖12係依據第四具體例之一照度偵測裝置9〇 的剖面圖。並且，在圖12中，相同元件符號係依附至對 應於依據圖4至11所示之第一、第二及第三具體例的照 度偵測裝置12、70及80之結構，以及在此將省略它們的 欽述。 在上述具體例中，使該支撐基板2 6成形為像一平板， 97107611 29 200901432 2在該半透明構件32中形成該凹部66,其#該凹部66 構成用以容納該等光接收元件27等之空間卜同時，在 本具體例中’在—支撐基板26A t形成-凹部67，以及 L吏二1明，，成形為一平板。在此方式中，構成該 凹°卩不疋經常被提供至該半透明構件32，以及 可形成於該支撐基板26A上。 士此情況中，本具體例可應用至上面在第一及第二具體 例令所述之照度偵測襄置12及70(見圖5及圖7)。換句 :說可基板26上形成該凹部及可使該半透明 構件32成形為一平板。 /發明可應用至用則貞測從外部所照射之光的照度之 照度偵測零件及照度偵測裝置。 雖然已描述本發明之示範性具體例，但是熟習該項技藐 者將明顯知易在不脫離本發明情況下可實施各種變更及 修改、。因此，意欲在所时請專利範圍中涵蓋落在本發明 之精神及範圍内之所有變更及修改。 【圖式簡單說明】Ο ^海凹# 66 forms a (four)e between the semi-transparent member 32 for accommodating the plurality of light-receiving S members 27 and the support substrate 26. The semi-transparent ^ ^ 32 system is provided to hermetically seal the space e. For example, the material of the transparent member 32 can be used. When glass is used as the material of the half + 2, the translucent member 32 and the substrate body 36 manufactured by Shi Xi can be anodically bonded. In this manner, the space 容纳 accommodating the plurality of light receiving elements 27 can be hermetically sealed by anodic bonding of the translucent member 32 and the substrate body 36. Therefore, the space Ε can be prevented from being contaminated. The AR coating 33 is provided to cover the surface of the translucent member 32 Β (the surface irradiated from the light emitted by the exposure device 1). The ar coating 33 is provided to effectively pass the light irradiated by the exposure device 10 through the translucent by preventing reflection of light irradiated from the exposure device 10 on the surface 32β of the translucent member 32. Member 32. A Ta2〇s/Si〇2 multilayer film may be used as the ar coating 33, and a Ta2〇5 film and a Si〇2 film may be stacked on the face 32B of the translucent member 32 in order to form the TaAVSiO2 multilayer. membrane. The TaWs/SiO2 multilayer film can be formed by sputtering and vapor deposition. The thickness of the Ta2〇s film can be set as an example 97107611 22 200901432 as 〇·2Α. Further, the thickness of the Si〇2 film can be set to, for example, 〇 i3 A. In this manner, the AR coating 33 is provided on the face 32B of the translucent member 32. As a result, the illuminance corresponding to the light actually irradiated from the exposure device 1 can be detected. According to the illuminance detecting part of this specific example, since the plurality of light receiving elements 27 are arranged in an array on a support substrate 26, the alignment pitch P1 of the light receiving elements 27 can be narrowed. Therefore, the illuminance distribution of the light irradiated from the exposure device 10 can be detected in detail. Further, since the substrate body 36 is made of tantalum, warpage can be suppressed in the substrate body holder. Therefore, the plurality of light receiving elements 27 can be disposed in a desired position of the support substrate 26 with high accuracy, and therefore, the reliability of the illuminance of the light detected by the plurality of light receiving elements 27 can be improved. Further, since the substrate body 36 is made of tantalum, the pads 42 and 43 can be formed by the plating method. Therefore, the size of the pads 42 and 43 can be reduced. As a result, the detailed distribution of the illuminance of the light irradiated from the exposure device 丨〇 can be detected with high accuracy by narrowing the alignment pitch P! of the light receiving elements. Further, according to the specific example The illuminance detecting device is configured to dispose the plurality of light receiving elements 27 on the support substrate 26 in the plurality of illuminance detecting parts 14. Further, the plurality of illuminance detecting parts 14 have a substrate made of ruthenium The body 36 is provided on the thin plate 22 in an array, wherein the outer shape of the thin plate 22 is substantially equal to the wiring substrate exposed by the exposure device 1 . Therefore, relative to the illumination detecting device 112 in the related art ( Referring to Fig. 3), the alignment pitch & 97107611 23 200901432 of the light receiving elements 27 can be narrowed. At the end, the illuminance distribution of the light irradiated from the exposure device can be detected in detail. In the example, although the illuminance % of the light irradiated from the exposure device 已 has been described, the light measured by the illuminance test and the detection component 14 is not limited. This specific example. The illuminance of the light irradiated from the ultraviolet ray irradiation device can be detected by the illuminance debt measuring device 12 and/or the illuminance detecting device 14. [Second specific example] Fig. 7 is a second specific example of the present invention. A cross-sectional view of an illumination detecting device. In Fig. 7, the same component symbol is attached to the same component as the illumination detecting device 12 in the first specific example. Eight reference Fig. 7 'In addition to providing a plurality of illumination (four) parts? In place of the illuminance provided by the illuminance detecting device 12 of the first specific example, the illuminance measuring device 7 is configured similarly to the illuminance detecting device 12 except for the illuminance provided by the illuminance detecting device 12 of the first specific example. The illuminance_part 14 of the first embodiment is provided with a light shielding member 73. The illuminating member 71 is mounted on the illuminance detecting member 14. The wind is similar to the member 32. In addition to the individual portions of the light receiving phase of the light receiving elements 27, the light covers the (four) member 32 of the recess (4) in the recess: the masking member 73 is provided to cut off the exposure from the exposure apparatus: The light 0 is shown in Figure 8 when the top is viewed in the light receiving it - Light receiving 97107111 24 200901432 A diagram showing the positional relationship between an opening portion and a portion formed in a light shielding member. In Fig. 8, the same component symbol is attached to the illumination detecting device similar to that shown in Fig. 7. The light shielding member 73 has an opening 73A at a portion with respect to the light receiving portion 63 of the light receiving members 27 to expose the translucent member 32. The openings m are referred to. The light receiving portion for passing the light irradiated from the exposure device 10 to the light receiving elements 27 is formed in this manner. The light shielding member 73 is in the light receiving portion 63 with respect to the light receiving members 27. The portion has the openings w and is provided to cover the inner surface of the translucent member 32 relative to the recess (4). Thus, the plurality of light receiving elements 27 respectively detect only the pair of 7G members 27 received per light. The illuminance of the light illuminated by the quasi-position. As a result, the illuminance of light in a narrow range can be detected. And the opening portion 73A is straight; R2 can be set smaller than the diameter R1 of the effective region 63 of the light receiving portion 63 of the optical connector 27 (see FIG.) Qiu: Yes, the light is not except for the effective region 63A. Irradiation to the optical interface and thus 'can improve the illuminance of the illumination of the light detected by the plurality of light receiving elements 27. The system is set to (four) two = mouth; =, 63A straight (four) 1 such as Φ0.4 view. The opening can be set to two (4) for two: for the light shielding member formed by the above; the thickness of the opening can be set to, for example, 5A. And the ruthenium film can be formed by, for example, vapor deposition. 97107611 200901432 According to the illuminance detecting part of the specific example, the light shielding member 73 has the openings 73A on a portion of the light receiving portion 63 with respect to the light receiving elements 27, and is provided to cover the translucent member. 32 is opposite the inner surface of the recess 66. Therefore, the plurality of light receiving elements 27 detect only the illuminance of the light irradiated to the aligned position of each of the light receiving elements 27, respectively. As a result, the illuminance of light in a narrow range can be detected. In addition, each of the plurality of illuminance detecting members 71 of the plurality of illuminance detecting members 71 has the light shielding member 73, and the openings m are formed in the light shielding member 73. Therefore, the plurality of light receiving elements 27 can only detect the illuminance of the light irradiated to the aligned position of each of the light receiving elements. As a result, the illuminance of the light in a narrow range can be detected. In the example, although the illuminance of the light irradiated from the exposure worker is measured, the light detected by the illuminance detecting device 7 and the illuminance detecting component 71 is not limited to the present example. (For example, the illuminance detecting device 7 and/or the illuminance detecting part 债 can measure the illuminance of the light irradiated from the ultraviolet ray irradiation device for hardening-UV resin. [Third specific example] 9 to 11 are views showing an illuminance detecting device according to a third specific example of the present invention. Fig. 9 is a cross-sectional view showing a illuminating device 80 according to a third specific example of the present invention, Fig. 1 The side view of the illuminance measuring device 8 (the portion of the translucent member 32 is shown as a cross-sectional view), and the plan view of the support substrate 26 of the FIG. 11 (showing the removal of the translucent 97170116 26 200901432 member) Case of 32). In Figures 9 to U, the same The symbols are attached to the structures of the illumination detecting devices 12 and 70 corresponding to the first and second specific examples shown in FIGS. 4 to 8, and their description will be omitted herein. According to the first and second specific examples The illuminance detecting device 12 and the illuminance detecting device 70' each of the light receiving elements 27 has a light receiving surface (light receiving portion) 63 and the plurality of light receiving elements 27 are arranged in an array on the support substrate 26. Therefore, compared with the illuminance measuring device in the related art, the size reduction of the illuminance detecting devices 12 and 7 can be achieved: Meanwhile, the illuminance detecting device 8 依据 according to the specific example is characterized by A photodiode wafer 82 is used as a light-receiving element mounted on the support substrate 26 to constitute an illuminance detecting part 81, which is arrayed in the photodiode wafer 82 in a phase plate 85 (wafer) A plurality of light receiving portions 63 are formed thereon. As shown in Fig. 11, the plurality of light receiving portions/knifes 63 are disposed on the photodiode wafer 82 in an array mode (more particularly, a vertical 6 inch horizontal 6^ lattice). Individual light receiving Part 63 of the positive electrode 6! by The lead wiring 83 formed on the front surface of the substrate 85 is guided to the outer peripheral portion, and is connected to the crucible 42 formed on the outer periphery. And the 'negative electrode of the individual light receiving portion 63 is connected to the other J-connected The electrode pattern 86 is connected to a negative surface formed on the back surface of the substrate 85: in the crucible 'as shown in FIGS. 9 and 10', the negative electrode pattern 86 is formed on the total area of the lower surface of the substrate 85. Solid: Month 82': The negative electrode pattern 86 is electrically connected to the pad 44 formed on the upper surface 36A of the substrate body 36 according to the alignment position of the photodiode 82, which is formed by the 97107116 27 200901432. Pad 44 is connected to the external connection ends 29 via the through layers 39. Thus, the electrodeless electrode of the diode wafer 82 is electrically connected to the external connection terminals 29. In the present embodiment, although the negative electrode pattern 86 and the pad are formed with an area substantially equal to the area of the photodiode wafer 82, they are not limited to the exemplary embodiment. The negative 86 and the pad 44 may be partially formed. At the same time, the positive electrode 61 formed around the substrate 85 is connected to the crucible 42 formed on the substrate body 36 by using the metal wire 54. The individual electrodes 42 are connected to the external connection terminals 2 via the through vias 38. Thus, the positive electrodes 61 of the photodiode wafer 82 are electrically connected to the external connection terminals 28. According to this configuration, when the #substrate μ is viewed from the back side, the external connection ends 29 are disposed on the inner side and the outer connection ends 28 are disposed on the outer side. And 'in this specific example, the translucent member 32 is made of glass' and when the face 32A is anodically bonded to the upper surface 36A of the substrate body 36 which is made of the stone eve Translucent member 32 The substrate 26 is integrally formed. Further, the light shielding member 73 is formed in a position of the translucent member 32 with respect to the photodiode wafer 82. Further, the opening portion 73A' is formed in a position of the light shielding member 73 with respect to the light receiving portion (10). The opening portion 73 has a narrower region than the effective portion 63A of the optical interface 3. In the illuminance detection zero # 构成 constructed according to the above specific example, the photodiode crystal 4 82 is used, which is formed as an array on the same substrate 97107611 28 200901432 S5 (wafer) in an array manner. Therefore, a plurality of light receiving portions (9) of 70 pieces can be further narrowed in the alignment pitch of the adjacent light receiving portions 63 in Fig. 9 and Fig. 2 and in the second specific example, as indicated by H. In other words, the metal line 54 is provided at the first place, so that the space of the metal line 54 is placed between: the adjacent light receiving elements 27. In the substrate body 36, a photodiode for use in the present embodiment is required to be provided to form the metal on the substrate 85. = The lead-out wiring 83 is provided as a fine pattern wiring. The result ',; == shortens the alignment pitch P2 of the adjacent first receiving portions 63, and thus the distribution of the illuminance can be detected with higher accuracy. In the first and second specific examples, in the light receiving elements 27 mounted on the substrate body 36, it is necessary to separately place and then mount the plurality of light receiving elements #27. In this embodiment, a photodiode wafer 82 can be placed and then mounted on the substrate body 36. Therefore, the simplification of the assembly operation can be achieved by using the structure of this specific example. [Fourth Specific Example] Fig. 12 is a view showing an illumination detecting device according to a fourth specific example of the present invention. Figure 12 is a cross-sectional view showing an illuminance detecting device 9A according to a fourth specific example. Also, in FIG. 12, the same component symbols are attached to the structures of the illumination detecting devices 12, 70, and 80 corresponding to the first, second, and third specific examples shown in FIGS. 4 to 11, and will be herein. Omit their interpretation. In the above specific example, the support substrate 26 is shaped like a flat plate, and 97107611 29 200901432 2 forms the concave portion 66 in the translucent member 32, and the recessed portion 66 is configured to accommodate the light receiving elements 27, etc. At the same time, in this specific example, the -supporting substrate 26A t is formed as a recess 67, and L is formed as a flat plate. In this manner, the concave portion is often provided to the translucent member 32, and can be formed on the support substrate 26A. In this case, the specific example can be applied to the illumination detecting devices 12 and 70 described above in the first and second specific examples (see Figs. 5 and 7). In other words, the concave portion is formed on the substrate 26 and the translucent member 32 can be formed into a flat plate. The invention can be applied to illuminance detecting parts and illuminance detecting devices that measure the illuminance of light irradiated from the outside. While the invention has been described with respect to the specific embodiments of the present invention Therefore, all changes and modifications that come within the spirit and scope of the invention are intended to be included in the scope of the invention. [Simple description of the map]
圖1 圖； 係在製造一佈線基板中所使用之一曝光裝置的示 圖2係描述在相關技藝中之一照度偵測裝置的圖式； 圖3係圖2所示之照度偵測裝置的放大剖面圖； 圖4係依據本發明之第一具體例的使用一照度偵測裝 置之一曝光裝置的示意圖； & 圖5係依據本發明之第一具體例的照度偵測裝置之剖 97107611 30 200901432 面圖 圖 圖6係一配置有複數個光接收元件之支撐基板的平面 » 圖7係依據本發明之第二具體例的一照度偵測裝置之 剖面圖； 圖8係顯示在從上面觀看時在該光接收元件之一光接 收部與一在一光遮蔽構件中所形成之開口部間的位置關 係之圖式。 Ο 圖 9 係依據本發明之第三 剖面 圖 9 圖 10 係依據本發明之第三 面圖 ’其中一半透明構件之一 圖 11 係在依據本發明之第 所使用之支稽·基板26的平面: 圖 12 係依據本發明之第四 剖面 圖< > 【主 要元件符號說明】 10 曝光裝置 11 平台 12 照度偵測裝置 13 對準板 14 照度偵測零件 16 光源 17 DMD 97107611 之 31 200901432 18 吸光板 19 投影透鏡 22 薄板 22A 上表面 23 佈線圖案 24 佈線圖案 26 支禮基板 26A 支撐基板 27 光接收元件 28 外部連接端 29 外部連接端 32 半透明構件 32A 面 32B 面 33 抗反射塗層 36 基板本體 36A 上表面 36B 下表面 37 絕緣膜 37A 下表面 38 貫穿介層 39 貫穿介層 42 塾 43 墊 97107611 32 200901432Figure 2 is a diagram showing an illumination device used in the manufacture of a wiring substrate. Figure 2 is a diagram showing an illumination detection device in the related art; Figure 3 is an illumination detection device shown in Figure 2. FIG. 4 is a schematic diagram of an exposure apparatus using an illumination detecting apparatus according to a first specific example of the present invention; FIG. 5 is a cross-sectional view of a illuminance detecting apparatus according to a first specific example of the present invention. 30 200901432 FIG. 6 is a plane of a support substrate provided with a plurality of light receiving elements. FIG. 7 is a cross-sectional view of an illumination detecting apparatus according to a second specific example of the present invention; FIG. 8 is shown from above. A view showing a positional relationship between a light receiving portion of one of the light receiving elements and an opening formed in a light shielding member during viewing. Figure 9 is a third sectional view of the present invention. Figure 10 is a third side view of the present invention. [One of the transparent members of Figure 11 is in the plane of the substrate 26 used in accordance with the first aspect of the present invention. Figure 12 is a fourth sectional view according to the present invention <> [Major component symbol description] 10 Exposure device 11 Platform 12 Illumination detecting device 13 Alignment plate 14 Illumination detecting part 16 Light source 17 DMD 97107611 31 200901432 18 Light absorbing plate 19 Projection lens 22 Thin plate 22A Upper surface 23 Wiring pattern 24 Wiring pattern 26 Bundle substrate 26A Support substrate 27 Light receiving element 28 External connection end 29 External connection end 32 Translucent member 32A Face 32B Face 33 Anti-reflection coating 36 Substrate Main body 36A upper surface 36B lower surface 37 insulating film 37A lower surface 38 penetrates through layer 39 through interlayer 42 塾 43 pad 97107611 32 200901432
44 整 45 外部連接墊 46 外部連接墊 48 防焊層 48A 開口 48B 開口 51 鎳層 52 金層 54 金屬線 56 通孔 57 通孔 61 正電極 62 負電極 63 光接收部 63A 有效區域 66 凹部 67 凹部 70 照度偵測裝置 71 照度偵測零件 73 光遮蔽構件 73A 開口 80 照度偵測裝置 81 照度偵測零件 82 光二極體晶片 97107611 33 200901432 83 引出佈線 85 基板 8 6 負電極圖案 90 照度偵測裝置 100 曝光裝置 101 平台 102 佈線基板 103 光阻膜44 integral 45 external connection pad 46 external connection pad 48 solder mask 48A opening 48B opening 51 nickel layer 52 gold layer 54 metal wire 56 through hole 57 through hole 61 positive electrode 62 negative electrode 63 light receiving portion 63A effective region 66 recess 67 recess 70 Illumination detecting device 71 Illuminance detecting part 73 Light shielding member 73A Opening 80 Illuminance detecting device 81 Illumination detecting part 82 Photodiode wafer 97107117 33 200901432 83 Leading wiring 85 Substrate 8 6 Negative electrode pattern 90 Illuminance detecting device 100 Exposure device 101 platform 102 wiring substrate 103 photoresist film
105 光源 106 數位微鏡裝置（DMD) 107 吸光板 108 投影透鏡 112 照度偵測裝置 113 對準板 114 照度偵測零件 115 薄板 115A 上表面 116 佈線圖案 117 佈線圖案 121 陶瓷基板 122 光二極體 124 陶瓷框 124A 貫穿孔 125 金屬線 97107611 200901432105 Light source 106 Digital micromirror device (DMD) 107 Light absorbing plate 108 Projection lens 112 Illuminance detecting device 113 Alignment plate 114 Illuminance detecting part 115 Thin plate 115A Upper surface 116 Wiring pattern 117 Wiring pattern 121 Ceramic substrate 122 Light diode 124 Ceramic Frame 124A through hole 125 metal wire 97170711 200901432
126 玻璃基板 128 引線 129 引線 131 陶瓷基板本體 131A 上表面 133 塾 134 墊 136 正電極 137 負電極 138 光接收部 141 焊料 142 焊料 A 掃描方向 B 光照射區域 C 距離 E 空間 F 深度 J 光照射區域 K 掃描方向 L 空間 Ml 厚度 M2 厚度 Pl 對準間距 P2 對準間距 97107611 35 200901432126 Glass substrate 128 Lead 129 Lead 131 Ceramic substrate body 131A Upper surface 133 塾 134 Pad 136 Positive electrode 137 Negative electrode 138 Light receiving portion 141 Solder 142 Solder A Scan direction B Light irradiation area C Distance E Space F Depth J Light irradiation area K Scanning direction L Space Ml Thickness M2 Thickness Pl Alignment pitch P2 Alignment pitch 97107711 35 200901432
Pa 對準間距 R1 直徑 R2 直徑 W1 寬度 W2 寬度 97107611 36Pa Alignment pitch R1 Diameter R2 Diameter W1 Width W2 Width 97107611 36
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007054706 | 2007-03-05 | ||
| JP2007126490A JP5281252B2 (en) | 2007-03-05 | 2007-05-11 | Illuminance detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200901432A true TW200901432A (en) | 2009-01-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097107611A TW200901432A (en) | 2007-03-05 | 2008-03-05 | Illuminance detecting component and illuminance detecting apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5281252B2 (en) |
| KR (1) | KR20080081833A (en) |
| TW (1) | TW200901432A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7410782B2 (en) | 2020-04-03 | 2024-01-10 | 京セラ株式会社 | Electromagnetic wave detection device and detection module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS627035U (en) * | 1985-06-28 | 1987-01-16 | ||
| JP2001196486A (en) * | 2000-01-07 | 2001-07-19 | Murata Mfg Co Ltd | Reduced-pressure package structure and manufacturing method thereof |
| JP4139051B2 (en) * | 2000-06-28 | 2008-08-27 | 富士フイルム株式会社 | Linear image sensor chip and linear image sensor |
| JP2002329850A (en) * | 2001-05-01 | 2002-11-15 | Canon Inc | Chip size package and its manufacturing method |
| JP2003123689A (en) * | 2001-10-17 | 2003-04-25 | Fuji Koken Kk | High-brightness discharge lamp |
| JP3881888B2 (en) * | 2001-12-27 | 2007-02-14 | セイコーエプソン株式会社 | Optical device manufacturing method |
| AU2003235925A1 (en) * | 2002-05-10 | 2003-11-11 | Hamamatsu Photonics K.K. | Rear surface irradiation photodiode array and method for producing the same |
| JP4181807B2 (en) * | 2002-07-11 | 2008-11-19 | 新光電気工業株式会社 | Laser processing method |
| JP2004273747A (en) * | 2003-03-07 | 2004-09-30 | Nippon Kessho Kogaku Kk | Photodetector and radiation detecting device |
| JP2007027279A (en) * | 2005-07-13 | 2007-02-01 | Shinko Electric Ind Co Ltd | Semiconductor device and manufacturing method thereof |
| JP4889974B2 (en) * | 2005-08-01 | 2012-03-07 | 新光電気工業株式会社 | Electronic component mounting structure and manufacturing method thereof |
-
2007
- 2007-05-11 JP JP2007126490A patent/JP5281252B2/en not_active Expired - Fee Related
-
2008
- 2008-03-04 KR KR1020080020046A patent/KR20080081833A/en not_active Application Discontinuation
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| KR20080081833A (en) | 2008-09-10 |
| JP2008252052A (en) | 2008-10-16 |
| JP5281252B2 (en) | 2013-09-04 |
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